Conductive paste and semiconductor device

Abstract

To provide a conductive paste capable of improving reliability of a semiconductor device, and a semiconductor device with improved reliability.SOLUTION: The conductive paste includes: conductive metal particles; and a base resin, the conductive paste having a curing shrinkage ratio of at least 0.1% and less than 18.0%.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to a conductive paste and a semiconductor device. [Background technology]

[0002] In semiconductor devices, conductive pastes are widely used as adhesives for mounting semiconductor elements on substrates, and examples of such conductive pastes include pastes containing metal particles.

[0003] An example of a technique related to conductive pastes is the technique described in Patent Document 1. Patent Document 1 describes a resin paste composition that improves peel strength against a support member (particularly a copper lead frame or an organic substrate) and prevents reflow cracking even when a copper lead frame or an organic substrate is used as the support member, and a semiconductor device using the same, the resin paste composition containing (A) an acrylic acid ester or a methacrylic acid ester, (B) a butadiene oligomer, (C) a radical initiator, (D) an epoxy resin, (E) an epoxy resin curing agent, and (F) a filler, and the resin paste composition contains a specific acrylic acid ester or methacrylic acid ester as component (A). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-154633 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention provides a conductive paste that can improve the reliability of a semiconductor device, and a semiconductor device with improved reliability. [Means for solving the problem]

[0006] The present inventors have conducted extensive research to achieve the above object, and as a result have found that the reliability of the resulting semiconductor device can be improved by controlling the cure shrinkage rate of the conductive paste within a specific range, thereby completing the present invention.

[0007] According to the present invention, the following conductive paste and semiconductor device are provided.

[0008] [1] A conductive paste comprising conductive metal particles and a base resin, A conductive paste produced by the following method 1, wherein the cure shrinkage of the conductive paste is 0.1% or more and less than 18.0%. (Method 1) The conductive paste was applied to the pad of a square copper lead frame measuring 10 mm long x 10 mm wide x 0.15 mm thick. A silicon chip measuring 2.0 mm long x 2.0 mm wide x 0.35 mm thick was then placed on the conductive paste so that the center of the copper lead frame and the center of the silicon chip were aligned vertically. A load of 100 gf was then applied perpendicularly to the silicon chip to obtain a pre-heat-treated laminate with an adhesive layer thickness of 20 ± 5 μm. The pre-heat-treated laminate was then placed in an electric furnace thoroughly purged with nitrogen, heated from 25 °C to 175 °C at a constant rate over 30 minutes, and heat-treated at 175 °C for 60 minutes to obtain a post-heat-treated laminate. The cure shrinkage is calculated by the following formula (1), where the thickness of the adhesive layer of the laminate before heat treatment is t0 [μm] and the thickness of the adhesive layer of the laminate after heat treatment is t1 [μm]. Curing shrinkage rate (%) = ((t0-t1) / t0) × 100 (1) [2] The conductive paste according to [1] above, wherein the mass loss rate of the conductive paste obtained by the following method 2 is 0.1% or more and 5.0% or less. (Method 2) 30 mg of the above conductive paste is placed in an aluminum open cell and set in the measurement section of a simultaneous thermogravimetry and differential thermal analyzer (TG-DTA). The temperature is raised from 25°C to 175°C at a rate of 5°C / min, and the mass loss rate is measured after holding at 175°C for 60 minutes. [3] The conductive paste according to [1] or [2] above, wherein the rate of change in die shear strength of the conductive paste, measured by the following method 3, is 0.1% or more and 30% or less. (Method 3) The conductive paste was applied to the pad portion of a square copper lead frame measuring 10 mm long x 10 mm wide x 0.15 mm thick. A silicon chip measuring 2.0 mm long x 2.0 mm wide x 0.35 mm thick was then placed on the conductive paste so that the center of the copper lead frame and the center of the silicon chip were vertically aligned. A load of 100 gf was then applied perpendicularly to the silicon chip to obtain a laminate with an adhesive layer thickness of 20 ± 5 μm. The laminate was then placed in an electric furnace thoroughly purged with nitrogen, heated from 25 °C to 175 °C at a constant rate over 30 minutes, and heat-treated at 175 °C for 60 minutes to obtain a test specimen. The test specimen was then subjected to a high-temperature, high-humidity test in which it was maintained at 120 °C and 100% humidity for 24 hours. For each of the test pieces before the high-temperature, high-humidity test and the test pieces after the high-temperature, high-humidity test, the die shear strength at 260°C is measured using a universal bond tester at a measurement speed of 500 μm / s and a measurement temperature of 260°C by pressing a jig against the side of the silicon chip at a point 50 μm away in the vertical direction from the top surface of the test copper lead frame. The die shear strength of the test piece before the high-temperature, high-humidity test is defined as D0, and the die shear strength of the test piece after the high-temperature, high-humidity test is defined as D1, and the rate of change in die shear strength is calculated using the following formula (2). Die shear strength change rate (%) = ((D0-D1) / D0) × 100 (2) [4] The conductive paste according to [3] above, wherein the die shear strength (D0) of the conductive paste is 5N or more and 100N or less. [5] The conductive paste according to any one of the above [1] to [4], further comprising a silane coupling agent. [6] The conductive paste according to [5] above, wherein the silane coupling agent comprises one or more selected from the group consisting of epoxy silane, sulfide silane, (meth)acrylic silane, and amino silane. [7] The conductive paste according to [6] above, wherein the silane coupling agent includes both an epoxy silane and a sulfide silane. [8] The conductive paste according to any one of [5] to [7] above, wherein the content of the silane coupling agent is 0.01% by mass or more and 5.0% by mass or less, when the entire conductive paste is taken as 100% by mass. [9] The conductive paste according to any one of the above [1] to [8], wherein the conductive metal particles include silver particles.

[10] The conductive paste according to any one of [1] to [9] above, wherein the content of the conductive metal particles is 50% by mass or more and 90% by mass or less, when the entire conductive paste is taken as 100% by mass.

[11] The conductive paste according to any one of the above [1] to

[10] , wherein the base resin contains a thermosetting resin.

[12] The conductive paste according to

[11] above, wherein the thermosetting resin comprises an epoxy resin.

[13] The conductive paste according to

[12] above, wherein the epoxy resin comprises one or more selected from the group consisting of bisphenol-type epoxy resins, modified bisphenol-type epoxy resins, and aliphatic epoxy resins.

[14] The conductive paste according to any one of [1] to

[13] above, wherein the content of the base resin is 1% by mass or more and 15% by mass or less, when the entire conductive paste is taken as 100% by mass.

[15] The conductive paste according to any one of the above [1] to

[14] , further comprising a curing agent.

[16] The conductive paste according to

[15] above, wherein the curing agent comprises one or more compounds selected from the group consisting of bisphenol compounds and polyfunctional phenol compounds.

[17] The conductive paste according to

[15] or

[16] above, wherein the content of the curing agent is 1% by mass or more and 15% by mass or less, when the entire conductive paste is taken as 100% by mass.

[18] The conductive paste according to any one of the above [1] to

[17] , further comprising a monomer.

[19] The conductive paste according to

[18] above, wherein the monomer comprises a (meth)acrylic monomer.

[20] The conductive paste according to

[19] above, wherein the (meth)acrylic monomer comprises one or more selected from the group consisting of 1,6-hexanediol di(meth)acrylate, 2-phenoxyethyl (meth)acrylate, polyoxypropylene mono(meth)acrylate, ethylene glycol di(meth)acrylate, and polyethylene glycol di(meth)acrylate. [twenty one] The conductive paste according to any one of the above

[18] to

[20] , wherein the monomer comprises an epoxy monomer. [twenty two] The conductive paste according to

[21] above, wherein the epoxy monomer comprises one or more selected from the group consisting of bisphenol-F-diglycidyl ether and 1,4-cyclohexanedimethanol diglycidyl ether. [twenty three] The conductive paste according to any one of

[18] to

[22] above, wherein the content of the monomer is 1% by mass or more and 30% by mass or less, when the entire conductive paste is taken as 100% by mass. [twenty four] The conductive paste according to any one of the above [1] to

[23] , further comprising a curing accelerator. [twenty five] The conductive paste according to

[24] above, wherein the curing accelerator contains a nitrogen atom-containing compound.

[26] The conductive paste according to

[24] or

[25] above, wherein the content of the curing accelerator is 0.01% by mass or more and 5.0% by mass or less, when the entire conductive paste is taken as 100% by mass.

[27] The conductive paste was applied to a PTFE plate, heated from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes. The resulting cured product had a thickness of 0.3 mm, a width of 4 mm, and a length of 10 mm. The storage modulus E' at 25°C was measured using a dynamic viscoelasticity measuring device in tension mode at a frequency of 10 Hz. 25 The conductive paste according to any one of the above [1] to

[26] , wherein the compressive strength is 3000 MPa or more and 20000 MPa or less.

[28] The conductive paste was applied to a PTFE plate, heated from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes. The resulting cured product had a thickness of 0.3 mm, a width of 4 mm, and a length of 10 mm. The storage modulus E' at 250°C was measured using a dynamic viscoelasticity measuring device in tension mode at a frequency of 10 Hz. 250 The conductive paste according to any one of the above [1] to

[27] , wherein the compressive strength is 10 MPa or more and 400 MPa or less.

[29] The conductive paste according to any one of the above [1] to

[28] , which has a glass transition temperature of 30°C or higher and 100°C or lower as measured by dynamic viscoelasticity measurement.

[30] The conductive paste according to any one of the above [1] to

[29] , wherein the conductive paste has an average linear expansion coefficient α1 of 20 ppm / °C or more and 100 ppm / °C or less, according to the following method 4. (Method 4) The conductive paste is applied to a PTFE plate, heated from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes to prepare a test piece with a thickness of 0.2 mm, a width of 4 mm, and a length of 10 mm.The average linear expansion coefficient α1 (ppm / °C) of the obtained test piece is measured at 0 to 40°C using a thermomechanical analyzer under the conditions of a measurement temperature range of 0 to 330°C and a heating rate of 10°C / min.

[31] The conductive paste according to any one of the above [1] to

[30] , wherein the conductive paste has an average linear expansion coefficient α2 of 50 ppm / °C or more and 200 ppm / °C or less, according to the following method 5. (Method 5) The conductive paste is applied to a PTFE plate, heated from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes to prepare a test piece with a thickness of 0.2 mm, a width of 4 mm, and a length of 10 mm.Then, using a thermomechanical analyzer, the average linear expansion coefficient α2 (ppm / °C) of the obtained test piece is measured at 110 to 150°C under the conditions of a measurement temperature range of 0 to 330°C and a heating rate of 10°C / min.

[32] The conductive paste according to any one of the above [1] to

[31] , having a viscosity η5 of 1.0 Pa s or more and 30.0 Pa s or less, measured using a BF viscometer and a cone rotor with an angle of 1.565 deg and a radius of 12 mm at a rotation speed of 5 rpm and a temperature of 25°C.

[33] Viscosity η measured using a BF type viscometer and a cone rotor with an angle of 1.565 deg and a radius of 12 mm at a rotation speed of 0.5 rpm and a temperature of 25°C 0.5 The conductive paste according to any one of the above [1] to

[32] , having a viscosity of 10.0 Pa·s or more and 100.0 Pa·s or less.

[34] Viscosity η measured using a BF viscometer and a cone rotor with an angle of 1.565 deg x radius of 12 mm at a rotation speed of 5 rpm and a temperature of 25°C. Viscosity η measured using a BF viscometer and a cone rotor with an angle of 1.565 deg x radius of 12 mm at a rotation speed of 0.5 rpm and a temperature of 25°C. 0.5 Viscosity ratio Ti(η0.5 The conductive paste according to any one of the above [1] to

[33] , wherein / η5) is 1.0 or more and 10.0 or less.

[35] A substrate; an adhesive layer on the substrate; a semiconductor element on the adhesive layer, The semiconductor device, wherein the adhesive layer comprises a cured product of the conductive paste according to any one of the above [1] to

[34] . [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a conductive paste that can improve the reliability of a semiconductor device, and a semiconductor device with improved reliability. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention; [Figure 2] 1. FIG. 4 is a cross-sectional view showing a modified example of the semiconductor device shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, the present invention will be described based on the embodiments. In the present embodiments, "A to B" indicating a numerical range means A or more and B or less unless otherwise specified.

[0012] <Conductive paste> The conductive paste of this embodiment is a conductive paste containing conductive metal particles and a base resin, and has a cure shrinkage rate of 0.1% or more and less than 18.0% when measured by the following method 1.

[0013] (Method 1) The conductive paste was applied to the pad of a square copper lead frame measuring 10 mm long x 10 mm wide x 0.15 mm thick. A silicon chip measuring 2.0 mm long x 2.0 mm wide x 0.35 mm thick was then placed on the conductive paste so that the center of the copper lead frame and the center of the silicon chip were aligned vertically. A load of 100 gf was then applied perpendicularly to the silicon chip to obtain a pre-heat-treated laminate with an adhesive layer thickness of 20 ± 5 μm. The pre-heat-treated laminate was then placed in an electric furnace thoroughly purged with nitrogen, heated from 25 °C to 175 °C at a constant rate over 30 minutes, and heat-treated at 175 °C for 60 minutes to obtain a post-heat-treated laminate. The cure shrinkage is calculated by the following formula (1), where the thickness of the adhesive layer of the laminate before heat treatment is t0 [μm] and the thickness of the adhesive layer of the laminate after heat treatment is t1 [μm]. Curing shrinkage rate (%) = ((t0-t1) / t0) × 100 (1)

[0014] The conductive paste of this embodiment can provide a conductive paste that can improve the reliability of semiconductor devices and a semiconductor device with improved reliability. This is thought to be because the cure shrinkage rate is 0.1% or more and less than 18.0%, which can suppress peeling between the cured conductive paste and the adherend due to shrinkage of the conductive paste after heat treatment.

[0015] From the viewpoint of further improving the reliability of the semiconductor device, the cure shrinkage rate of the conductive paste of this embodiment is preferably 17.0% or less, more preferably 16.0% or less, and even more preferably 15.0% or less, and the lower limit is not particularly limited, but may be, for example, 0.5% or more, 1.0% or more, 3.0% or more, 5.0% or more, 7.0% or more, or 10.0% or more.

[0016] The conductive paste of this embodiment can be obtained by appropriately adjusting the composition and type of each component contained in the conductive paste, particularly by adjusting the type and content of the silane coupling agent, peroxide, and stress reducing agent contained in the conductive paste.

[0017] The components contained in the conductive paste of this embodiment will be described below.

[0018] [Conductive metal particles] The conductive paste of this embodiment contains conductive metal particles. The conductive metal particles of this embodiment preferably contain one or more types selected from the group consisting of silver particles, gold particles, platinum particles, palladium particles, copper particles, nickel particles, and alloy particles thereof, and more preferably contain silver particles from the viewpoint of improving the performance balance between conductivity and ease of handling.

[0019] The shape of the conductive metal particles of this embodiment is not particularly limited, but examples thereof include spherical, flake, and scale-like shapes. In the conductive paste of this embodiment, the conductive metal particles preferably include scale-like particles, from the viewpoint of improving the balance between the reliability of the semiconductor device and the conductive performance of the conductive paste. Furthermore, from the viewpoint of reducing costs, a configuration in which the conductive metal particles include flake-like particles can also be adopted. Furthermore, from the viewpoint of improving the balance between cost reduction and aggregation uniformity, the conductive metal particles may include both scale-like particles and flake-like particles.

[0020] The average particle diameter (D 50) is preferably 0.5 μm or more, more preferably 1.0 μm or more, even more preferably 1.5 μm or more, even more preferably 2.0 μm or more, even more preferably 2.5 μm or more, from the viewpoint of improving the performance balance between the reliability of the semiconductor device and the conductivity of the conductive paste, and is preferably 50.0 μm or less, more preferably 40.0 μm or less, even more preferably 30.0 μm or less, even more preferably 20.0 μm or less, even more preferably 10.0 μm or less. The average particle diameter of the conductive metal particles (D 50 ) can be determined by measuring the volumetric particle size distribution by a laser diffraction scattering measurement method using, for example, a commercially available laser particle size distribution analyzer (e.g., SALD-7000 manufactured by Shimadzu Corporation), and the value at an integrated value of 50% can be used.

[0021] From the viewpoint of improving the balance between the reliability of the semiconductor device and the conductivity of the conductive paste, the content of the conductive metal particles in the conductive paste of this embodiment is preferably 50% by mass or more, more preferably 60% by mass or more, even more preferably 70% by mass or more, and is preferably 90% by mass or less, more preferably 85% by mass or less, even more preferably 80% by mass or less, even more preferably 78% by mass or less, when the entire conductive paste is taken as 100% by mass.

[0022] [Base resin] The conductive paste of this embodiment contains a base resin, which in this embodiment refers to a resin having a mass average molecular weight of 500 or more. The base resin of this embodiment preferably contains a thermosetting resin, from the viewpoint of further improving the balance of the reliability of the semiconductor device and the adhesiveness of the conductive paste.

[0023] The thermosetting resin includes, for example, one or more selected from the group consisting of acrylic resins such as acrylic oligomers and acrylic polymers; epoxy resins such as epoxy oligomers and epoxy polymers; and allyl resins such as allyl oligomers and allyl polymers. Here, from the viewpoint of further improving the balance between the reliability of the semiconductor device and the adhesiveness of the conductive paste, the thermosetting resin of this embodiment preferably contains an epoxy resin.

[0024] The epoxy resin preferably includes one or more selected from the group consisting of aromatic epoxy resins and aliphatic epoxy resins. The aromatic epoxy resin preferably includes one or more selected from the group consisting of bisphenol-type epoxy resins such as bisphenol A-type epoxy resins and bisphenol F-type epoxy resins; modified bisphenol-type epoxy resins such as modified bisphenol A-type epoxy resins, modified bisphenol F-type epoxy resins, and tetramethylbisphenol F-type epoxy resins; crystalline epoxy resins such as biphenyl-type epoxy resins, stilbene-type epoxy resins, and hydroquinone-type epoxy resins; novolac-type epoxy resins such as cresol novolac-type epoxy resins, phenol novolac-type epoxy resins, and naphthol novolac-type epoxy resins; phenol aralkyl-type epoxy resins such as phenylene-skeleton-containing phenol aralkyl-type epoxy resins, biphenylene-skeleton-containing phenol aralkyl-type epoxy resins, phenylene-skeleton-containing naphthol aralkyl-type epoxy resins, and alkoxynaphthalene-skeleton-containing phenol aralkyl-type epoxy resins; polyfunctional epoxy resins such as triphenolmethane-type epoxy resins and alkyl-modified triphenolmethane-type epoxy resins; and modified phenol-type epoxy resins such as dicyclopentadiene-modified phenol-type epoxy resins and terpene-modified phenol-type epoxy resins. The aliphatic epoxy resin preferably includes one or more selected from the group consisting of glycidyl ether type epoxy resins such as trimethylolpropane polyglycidyl ether type epoxy resins and polyethylene glycol glycidyl ether type epoxy resins; heterocycle-containing epoxy resins such as triazine nucleus-containing epoxy resins; and alicyclic epoxy resins such as vinylcyclohexene dioxide, dicyclopentadiene oxide, and alicyclic diepoxy adipade. Here, from the viewpoint of further improving the performance balance between the reliability of the semiconductor device and the adhesion of the conductive paste, the epoxy resin of this embodiment preferably contains one or more types selected from the group consisting of bisphenol-type epoxy resins, modified bisphenol-type epoxy resins, and aliphatic epoxy resins, more preferably contains one or more types selected from the group consisting of bisphenol F-type epoxy resins, bisphenol A-type epoxy resins, modified bisphenol F-type epoxy resins, modified bisphenol A-type epoxy resins, and glycidyl ether-type epoxy resins, and even more preferably contains one or more types selected from the group consisting of bisphenol F-type epoxy resins and modified bisphenol A-type epoxy resins.

[0025] From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the workability when using the conductive paste, the mass average molecular weight of the base resin of this embodiment is preferably 550 or more, more preferably 600 or more, and even more preferably 650 or more, and is preferably 100,000 or less, more preferably 75,000 or less, even more preferably 50,000 or less, even more preferably 25,000 or less, even more preferably 10,000 or less, even more preferably 7,500 or less, even more preferably 5,000 or less, even more preferably 2,500 or less, and even more preferably 1,000 or less.

[0026] From the viewpoint of further improving the hardening properties of the conductive paste and further improving the reliability of the semiconductor device, the content of the base resin in the conductive paste of this embodiment is preferably 1 mass % or more, more preferably 3 mass % or more, even more preferably 5 mass % or more, and is preferably 15 mass % or less, more preferably 12 mass % or less, even more preferably 10 mass % or less, even more preferably 8 mass % or less, even more preferably 6 mass % or less, when the entire conductive paste is taken as 100 mass %.

[0027] [Other ingredients] The conductive paste of this embodiment may contain the following components in addition to the components described above.

[0028] (hardening agent) The conductive paste of this embodiment preferably further contains a curing agent from the viewpoint of improving the curability. The curing agent preferably contains one or more compounds selected from the group consisting of bisphenol compounds and polyfunctional phenol compounds, from the viewpoint of further improving the reliability of the semiconductor device.

[0029] The bisphenol compound of this embodiment preferably contains one or more bisphenols selected from the group consisting of bisphenols and derivatives thereof, such as bisphenol F, bisphenol A, bisphenol S, tetramethylbisphenol A, tetramethylbisphenol F, tetramethylbisphenol S, dihydroxydiphenyl ether, dihydroxybenzophenone, tetramethylbiphenol, ethylidenebisphenol, methylethylidenebis(methylphenol), cyclohexylidenebisphenol, and biphenol. Here, from the viewpoint of further improving the performance balance between the reliability of the semiconductor device and the curability of the conductive paste, the curing agent of this embodiment preferably contains bisphenol F.

[0030] The polyfunctional phenol compound of this embodiment preferably includes one or more compounds selected from the group consisting of trifunctional phenols such as tri(hydroxyphenyl)methane and tri(hydroxyphenyl)ethane, and derivatives thereof, compounds obtained by reacting phenols such as phenol novolac and cresol novolac with formaldehyde, which are mainly binuclear or trinuclear, and derivatives thereof.

[0031] The curing agent of the present embodiment may contain a known curing agent in addition to the above-described components, such as a phenol compound other than the above-described bisphenol compound and polyfunctional phenol compound, or an acid anhydride.

[0032] Phenol compounds other than the above-mentioned bisphenol compounds and polyfunctional phenol compounds refer to compounds having two or more phenolic hydroxyl groups in one molecule, and their structure is not limited as long as they have two or more phenolic hydroxyl groups in one molecule.

[0033] Examples of the acid anhydride include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride, dodecenylsuccinic anhydride, a reaction product of maleic anhydride and polybutadiene, and a copolymer of maleic anhydride and styrene.

[0034] From the viewpoint of further improving the hardening properties of the conductive paste and further improving the reliability of the semiconductor device, the content of the curing agent in the conductive paste of this embodiment is preferably 1% by mass or more, more preferably 3% by mass or more, even more preferably 5% by mass or more, and is preferably 15% by mass or less, more preferably 10% by mass or less, even more preferably 8% by mass or less, even more preferably 6% by mass or less, when the entire conductive paste is taken as 100% by mass.

[0035] (monomer) The conductive paste of this embodiment preferably further contains a monomer, from the viewpoint of improving the balance of performance between the reliability of the semiconductor device and the workability when using the conductive paste. Here, from the viewpoint of improving the performance balance between the reliability of the semiconductor device and the workability when using the conductive paste, the monomer of the present embodiment includes one or more monomers selected from the group consisting of (meth)acrylic monomers and epoxy monomers.

[0036] The (meth)acrylic monomer of the present embodiment is preferably 2-phenoxyethyl (meth)acrylate, ethyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, isoamyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isodecyl (meth)acrylate, n-lauryl (meth)acrylate, n-tridecyl (meth)acrylate, n-stearyl (meth)acrylate, isostearyl (meth)acrylate, ethoxydiethylene glycol (meth)acrylate, butoxydiethylene glycol (meth)acrylate, methoxytriethylene glycol (meth)acrylate, 2-ethylhexyldiethylene glycol (meth)acrylate, methoxypolyethylene glycol Chole (meth)acrylate, methoxydipropylene glycol (meth)acrylate, cyclohexyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, phenoxydiethylene glycol (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenol ethylene oxide modified (meth)acrylate, phenylphenol ethylene oxide modified (meth)acrylate, isobornyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, diethylaminoethyl (meth)acrylate, dimethylaminoethyl (meth)acrylate quaternized, glycidyl (meth)acrylate, neopentyl glycol (meth)acrylic acid benzoate, 1,4-Cyclohexanedimethanol mono(meth)acrylate, 2-hydroxyethyl(meth)acrylate, 2-hydroxypropyl(meth)acrylate, 2-hydroxybutyl(meth)acrylate, 2-hydroxy-3-phenoxypropyl(meth)acrylate, 2-(meth)acryloyloxyethyl succinate, 2-(meth)acryloyloxyethyl succinate, 2-(meth)acryloyloxyethyl hexahydrophthalate, 2-(meth)acryloyloxyethyl Diethyl phthalate, 2-(meth)acryloyloxyethyl-2-hydroxyethyl phthalate, 2-(meth)acryloyloxyethyl acid phosphate, 2-(meth)acryloyloxyethyl acid phosphate, ethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, 1,6-hexanediol di(meth)acrylate ) acrylate, hexane-1,6-diol bis(2-methyl(meth)acrylate), 4,4'-isopropylidenediphenol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,6-bis((meth)acryloyloxy)-2,2,3,3,4,4,5,5-octafluorohexane, 1,4-bis((meth)acryloyloxy)butane, 1,6-bis((meth)acryloyloxy)hexane, triethylene glycol di(meth)acrylate (meth)acrylate, polyoxypropylene mono(meth)acrylate, polyethylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, N,N'-di(meth)acryloylethylenediamine, N,N'-(1,2-dihydroxyethylene)bis(meth)acrylamide, and 1,4-bis((meth)acryloyl)piperazine. Here, from the viewpoint of improving the performance balance between the reliability of the semiconductor device and the workability when using the conductive paste, the (meth)acrylic monomer of this embodiment more preferably contains 1,The composition contains one or more selected from the group consisting of 6-hexanediol di(meth)acrylate, 2-phenoxyethyl (meth)acrylate, polyoxypropylene mono(meth)acrylate, ethylene glycol di(meth)acrylate, and polyethylene glycol di(meth)acrylate, and more preferably contains ethylene glycol di(meth)acrylate.

[0037] The epoxy monomer of this embodiment preferably includes one or more selected from the group consisting of monocyclic epoxy monomers such as 4-tert-butylphenyl glycidyl ether, m,p-cresyl glycidyl ether, phenyl glycidyl ether, and cresyl glycidyl ether; bisphenol compounds such as bisphenol A, bisphenol F, biphenol, and bisphenol-F-diglycidyl ether, or derivatives thereof; diols having an alicyclic structure such as hydrogenated bisphenol A, hydrogenated bisphenol F, hydrogenated biphenol, cyclohexanediol, cyclohexanedimethanol, cyclohexanediethanol, and 1,4-cyclohexanedimethanol diglycidyl ether, or derivatives thereof; bifunctional epoxidized aliphatic diols such as butanediol, hexanediol, octanediol, nonanediol, and decanediol, or derivatives thereof; and trifunctional monomers having a trihydroxyphenylmethane skeleton or an aminophenol skeleton. Here, from the viewpoint of improving the performance balance between the reliability of the semiconductor device and the workability when using the conductive paste, the epoxy monomer of the present embodiment more preferably includes one or more selected from the group consisting of bisphenol-F-diglycidyl ether and 1,4-cyclohexanedimethanol diglycidyl ether.

[0038] From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the workability when using the conductive paste, the molecular weight of the monomer of this embodiment is preferably 450 or less, more preferably 400 or less, even more preferably 350 or less, and is preferably 100 or more, more preferably 120 or more, even more preferably 140 or more, even more preferably 160 or more, even more preferably 180 or more.

[0039] From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the workability when using the conductive paste, the content of the monomer in the conductive paste of this embodiment is, when the entire conductive paste is taken as 100% by mass, preferably 1% by mass or more, more preferably 3% by mass or more, even more preferably 5% by mass or more, even more preferably 7% by mass or more, even more preferably 10% by mass or more, and is preferably 30% by mass or less, more preferably 25% by mass or less, even more preferably 20% by mass or less, even more preferably 15% by mass or less.

[0040] (curing accelerator) The conductive paste of this embodiment preferably further contains a curing accelerator from the viewpoint of improving the curability. The curing accelerator preferably contains one or more compounds selected from the group consisting of phosphorus atom-containing compounds and nitrogen atom-containing compounds.

[0041] The phosphorus atom-containing compound of the present embodiment preferably includes one or more compounds selected from the group consisting of organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, and adducts of phosphonium compounds and silane compounds.

[0042] The nitrogen atom-containing compound of this embodiment preferably includes one or more compounds selected from the group consisting of amidines and tertiary amines or quaternary ammonium salts thereof, such as dicyandiamide or a derivative thereof, 1,8-diazabicyclo[5.4.0]undecene-7, 2,4-diamino-6-(2'-methylimidazolyl-1-)ethyl-s-triazine, and benzyldimethylamine; and imidazole compounds, such as 2-undecylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and 2-phenyl-4,5-dihydroxymethylimidazole.

[0043] From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the curability of the conductive paste, the curing accelerator of the present embodiment preferably contains a nitrogen atom-containing compound, and more preferably contains one or more compounds selected from the group consisting of dicyandiamide or a derivative thereof, and an imidazole compound.

[0044] From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the curability of the conductive paste, the content of the curing accelerator in the conductive paste of this embodiment is, when the entire conductive paste is taken as 100% by mass, preferably 0.01% by mass or more, more preferably 0.1% by mass or more, even more preferably 0.3% by mass or more, even more preferably 0.5% by mass or more, and is preferably 5.0% by mass or less, more preferably 3.0% by mass or less, even more preferably 2.0% by mass or less, even more preferably 1.0% by mass or less, even more preferably 0.8% by mass or less.

[0045] (Silane coupling agent) The conductive paste of this embodiment preferably further contains a silane coupling agent, from the viewpoint of improving the balance of performance between the reliability of the semiconductor device and the adhesion between the conductive paste and the substrate. From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the adhesion between the conductive paste and the substrate, the silane coupling agent of the present embodiment preferably contains one or more types selected from the group consisting of epoxy silanes, sulfide silanes, (meth)acrylic silanes, and amino silanes, and more preferably contains one or more types selected from the group consisting of epoxy silanes and sulfide silanes.

[0046] The epoxy silane of the present embodiment preferably includes one or more selected from the group consisting of 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidyloxypropylmethyldimethoxysilane, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, and 3-glycidyloxypropyltriethoxysilane, and more preferably includes 3-glycidyloxypropyltrimethoxysilane.

[0047] The sulfide silane of the present embodiment preferably includes one or more selected from the group consisting of bis(3-(triethoxysilyl)propyl)disulfide, bis(3-(triethoxysilyl)propyl)tetrasulfide, and bis(3-(triethoxysilyl)propyl)polysulfide, and more preferably includes bis(3-(triethoxysilyl)propyl)tetrasulfide.

[0048] The (meth)acrylsilane of this embodiment preferably includes 3-(meth)acryloxypropyltrimethoxysilane.

[0049] The aminosilane of this embodiment preferably includes one or more selected from the group consisting of N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltriethoxysilane, N-(2-aminoethyl)-3-aminopropylmethyldiethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltriethoxysilane, and trimethoxy[3-(phenylamino)propyl]silane.

[0050] From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the adhesion between the conductive paste and the substrate, the content of the silane coupling agent in the conductive paste of this embodiment is, when the entire conductive paste is taken as 100% by mass, preferably 0.01% by mass or more, more preferably 0.05% by mass or more, even more preferably 0.1% by mass or more, even more preferably 0.3% by mass or more, even more preferably 0.5% by mass or more, even more preferably 0.6% by mass or more, even more preferably 0.8% by mass or more, and is preferably 5.0% by mass or less, more preferably 4.0% by mass or less, even more preferably 3.0% by mass or less, and even more preferably 2.0% by mass or less.

[0051] (Polymerization initiator) The conductive paste of this embodiment may further contain a polymerization initiator from the viewpoint of improving the curability. The polymerization initiator of the present embodiment preferably includes a radical polymerization initiator, and the radical polymerization initiator preferably includes one or more types selected from the group consisting of an azo compound and a peroxide.

[0052] The azo compound of this embodiment preferably includes one or more compounds selected from the group consisting of 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), 2,2'-azobis(2-cyclopropylpropionitrile), and 2,2'-azobis(2,4-dimethylvaleronitrile).

[0053] The peroxide of this embodiment is preferably a ketone peroxide such as methyl ethyl ketone peroxide or cyclohexanone peroxide; a peroxyketal such as 1,1-di(tert-butylperoxy)cyclohexane or 2,2-di(4,4-di(t-butylperoxy)cyclohexyl)propane; a hydroperoxide such as p-menthane hydroperoxide, diisopropylbenzene hydroperoxide, 1,1,3,3-tetramethylbutyl hydroperoxide, cumene hydroperoxide or t-butyl hydroperoxide; or a hydroperoxide such as di(2-t-butylperoxyisopropyl)benzene, dicumyl peroxide or 2,5-dimethyl-2,5-di(t-butylperoxy)hexamethyl peroxide. dialkyl peroxides such as dibenzoyl peroxide, di(4-methylbenzoyl) peroxide, diacyl peroxides such as dibenzoyl peroxide, di(4-methylbenzoyl) peroxide; peroxydicarbonates such as di-n-propyl peroxydicarbonate, diisopropyl peroxydicarbonate; and peroxyesters such as 2,5-dimethyl-2,5-di(benzoylperoxy)hexane, t-hexyl peroxybenzoate, t-butyl peroxybenzoate, and t-butylperoxy 2-ethylhexanoate.

[0054] From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the curability of the conductive paste, the polymerization initiator of the present embodiment preferably contains a peroxide, more preferably contains a peroxyketal, and even more preferably contains 1,1-di(tert-butylperoxy)cyclohexane.

[0055] From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the curability of the conductive paste, the content of the polymerization initiator in the conductive paste of this embodiment is preferably 0.01 mass % or more, more preferably 0.05 mass % or more, even more preferably 0.1 mass % or more, and is preferably 5.0 mass % or less, more preferably 3.0 mass % or less, even more preferably 1.0 mass % or less, even more preferably 0.5 mass % or less, even more preferably 0.3 mass % or less, when the entire conductive paste is taken as 100 mass %.

[0056] (organic particles) The conductive paste of this embodiment may further contain organic particles from the viewpoint of improving the coating properties and formability of the conductive paste. The organic particles of this embodiment preferably include divinylbenzene resin particles.

[0057] The average particle diameter (D 50 ) is preferably 0.5 μm or more, more preferably 1.0 μm or more, even more preferably 3.0 μm or more, even more preferably 5.0 μm or more, even more preferably 7.0 μm or more, even more preferably 9.0 μm or more, from the viewpoint of improving the coatability and formability of the conductive paste, and is preferably 50.0 μm or less, more preferably 40.0 μm or less, even more preferably 30.0 μm or less, even more preferably 20.0 μm or less, even more preferably 15.0 μm or less. The average particle diameter of the organic particles (D 50 ) can be determined by measuring the volumetric particle size distribution by a laser diffraction scattering measurement method using, for example, a commercially available laser particle size distribution analyzer (e.g., SALD-7000 manufactured by Shimadzu Corporation), and the value at an integrated value of 50% can be used.

[0058] From the viewpoint of improving the coatability and formability of the conductive paste, the content of the organic particles in the conductive paste of this embodiment is, when the entire conductive paste is taken as 100% by mass, preferably 0.01% by mass or more, more preferably 0.05% by mass or more, even more preferably 0.10% by mass or more, even more preferably 0.15% by mass or more, and is preferably 1.00% by mass or less, more preferably 0.75% by mass or less, even more preferably 0.50% by mass or less, even more preferably 0.25% by mass or less.

[0059] (low stress agent) Examples of the low stress agent of this embodiment include silicone compounds such as silicone oil and silicone rubber; polybutadiene compounds such as polybutadiene maleic anhydride adducts; acrylonitrile butadiene copolymer compounds; methacrylate compounds such as urethane methacrylate; and allyl ester compounds such as 1,4-cyclohexanedicarboxylic acid, di-2-propenyl ester, polymer with 1,2-propanediol.

[0060] From the viewpoint of improving the reliability of the semiconductor device, the content of the low stress agent in this embodiment is preferably less than 10.0 mass%, more preferably less than 5.0 mass%, even more preferably less than 3.0 mass%, even more preferably less than 1.0 mass%, even more preferably less than 0.5 mass%, and even more preferably less than 0.1 mass%, when the entire conductive paste is taken as 100 mass%.

[0061] (solvent) Examples of the solvent in this embodiment include alcohols such as ethyl alcohol, propyl alcohol, butyl alcohol, pentyl alcohol, hexyl alcohol, heptyl alcohol, octyl alcohol, nonyl alcohol, decyl alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, methyl methoxybutanol, α-terpineol, β-terpineol, hexylene glycol, benzyl alcohol, 2-phenylethyl alcohol, isopalmityl alcohol, isostearyl alcohol, lauryl alcohol, ethylene glycol, propylene glycol, and glycerin; acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diacetone alcohol (4-hydroxy-4-methyl-2-pentanone), 2- Ketones such as octanone, isophorone (3,5,5-trimethyl-2-cyclohexen-1-one) or diisobutyl ketone (2,6-dimethyl-4-heptanone); ethyl acetate, butyl acetate, diethyl phthalate, dibutyl phthalate, acetoxyethane, methyl butyrate, methyl hexanoate, methyl octanoate, methyl decanoate, methyl cellosolve acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, 1,2-diacetoxyethane, tributyl phosphate, phosphorus Esters such as tricresyl acid or tripentyl phosphate; ethers such as tetrahydrofuran, dipropyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dibutyl ether, propylene glycol dimethyl ether, tripropylene glycol mono-n-butyl ether, ethoxyethyl ether, 1,2-bis(2-diethoxy)ethane or 1,2-bis(2-methoxyethoxy)ethane; ester ethers such as 2-(2-butoxyethoxy)ethane acetate;Examples include ether alcohols such as 2-(2-methoxyethoxy)ethanol and 2-(2-butoxyethoxy)ethanol (butyl carbitol); hydrocarbons such as toluene, xylene, n-paraffin, isoparaffin, dodecylbenzene, turpentine, kerosene, and light oil; and volatile nitriles such as acetonitrile and propionitrile.

[0062] From the viewpoint of improving the reliability of the semiconductor device, the content of the solvent in this embodiment is preferably less than 3.0 mass%, more preferably less than 2.0 mass%, even more preferably less than 1.0 mass%, even more preferably less than 0.5 mass%, and even more preferably less than 0.1 mass%, when the entire conductive paste is taken as 100 mass%.

[0063] In addition to the components described above, the conductive paste of this embodiment may also contain other components such as antioxidants, dispersants, inorganic fillers such as silica and alumina, antifoaming agents, leveling agents, fine silica (thixotropy adjusting agents), and catalysts. From the viewpoint of improving the reliability of the semiconductor device, the total content of these components in the conductive paste of this embodiment is preferably 0.01 mass% or more, more preferably 0.05 mass% or more, even more preferably 0.1 mass% or more, and is preferably 1.0 mass% or less, more preferably 0.5 mass% or less, even more preferably 0.3 mass% or less, when the entire conductive paste is taken as 100 mass%.

[0064] [Physical Properties] From the viewpoint of further improving the reliability of the semiconductor device, the mass reduction rate of the conductive paste of this embodiment when measured by Method 2 below is preferably 5.0% or less, more preferably 4.8% or less, even more preferably 4.6% or less, even more preferably 4.4% or less, even more preferably 4.2% or less, and even more preferably less than 4.2%, and the lower limit is not particularly limited, but is, for example, 0.1% or more.

[0065] (Method 2) 30 mg of the above conductive paste is placed in an aluminum open cell and set in the measurement section of a simultaneous thermogravimetry and differential thermal analyzer (TG-DTA). The temperature is raised from 25°C to 175°C at a rate of 5°C / min, and the mass loss rate is measured after holding at 175°C for 60 minutes.

[0066] The mass loss rate of the conductive paste of this embodiment can be measured using, for example, a commercially available simultaneous thermogravimetric and differential thermal analyzer (for example, TG / DTA7200 manufactured by Hitachi High-Technologies Corporation).

[0067] From the viewpoint of further improving the reliability of the semiconductor device, the rate of change in die shear strength of the conductive paste of this embodiment, as measured by Method 3 below, is preferably 30% or less, more preferably 27% or less, even more preferably 25% or less, even more preferably 22% or less, and even more preferably 20% or less, and the lower limit is not particularly limited, but may be, for example, 0.1% or more, 0.3% or more, 0.5% or more, 1.0% or more, 2.0% or more, 3.0% or more, 3.5% or more, 4.0% or more, or 4.5% or more.

[0068] (Method 3) The conductive paste was applied to the pad portion of a square copper lead frame measuring 10 mm long x 10 mm wide x 0.15 mm thick. A silicon chip measuring 2.0 mm long x 2.0 mm wide x 0.35 mm thick was then placed on the conductive paste so that the center of the copper lead frame and the center of the silicon chip were vertically aligned. A load of 100 gf was then applied perpendicularly to the silicon chip to obtain a laminate with an adhesive layer thickness of 20 ± 5 μm. The laminate was then placed in an electric furnace thoroughly purged with nitrogen, heated from 25 °C to 175 °C at a constant rate over 30 minutes, and heat-treated at 175 °C for 60 minutes to obtain a test specimen. The test specimen was then subjected to a high-temperature, high-humidity test in which it was maintained at 120 °C and 100% humidity for 24 hours. For each of the test pieces before the high-temperature, high-humidity test and the test pieces after the high-temperature, high-humidity test, the die shear strength at 260°C is measured using a universal bond tester at a measurement speed of 500 μm / s and a measurement temperature of 260°C by pressing a jig against the side of the silicon chip at a point 50 μm away in the vertical direction from the top surface of the test copper lead frame. The die shear strength of the test piece before the high-temperature, high-humidity test is defined as D0, and the die shear strength of the test piece after the high-temperature, high-humidity test is defined as D1, and the rate of change in die shear strength is calculated using the following formula (2). Die shear strength change rate (%) = ((D0-D1) / D0) × 100 (2)

[0069] From the viewpoint of further improving the reliability of the semiconductor device, the die shear strength (D0) of the conductive paste of this embodiment is preferably 5N or more, more preferably 10N or more, even more preferably 15N or more, even more preferably 18N or more, and even more preferably 20N or more, and the upper limit is not particularly limited, but may be, for example, 100N or less, 75N or less, 50N or less, 40N or less, or 30N or less. Furthermore, from the viewpoint of further improving the reliability of the semiconductor device, the die shear strength (D1) of the conductive paste of this embodiment is preferably 3N or more, more preferably 5N or more, even more preferably 8N or more, even more preferably 10N or more, even more preferably 15N or more, and even more preferably 18N or more, and the upper limit is not particularly limited, but may be, for example, 100N or less, 75N or less, 50N or less, 40N or less, 30N or less, or 25N or less.

[0070] In the conductive paste of this embodiment, the conductive paste is applied to a PTFE (polytetrafluoroethylene) plate, and the temperature is increased from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes. The resulting cured product has a thickness of 0.3 mm, a width of 4 mm, and a length of 10 mm. The storage modulus E' at 25°C of the cured product is measured using a dynamic viscoelasticity measuring device under conditions of a tensile mode and a frequency of 10 Hz. 25 From the viewpoint of further improving the reliability of the semiconductor device, the pressure is preferably 3000 MPa or more, more preferably 4000 MPa or more, even more preferably 5000 MPa or more, even more preferably 6000 MPa or more, even more preferably 7000 MPa or more, and is preferably 20000 MPa or less, more preferably 18000 MPa or less, even more preferably 16000 MPa or less, even more preferably 14000 MPa or less, even more preferably 12000 MPa or less, even more preferably 10000 MPa or less.

[0071] Storage modulus E' of the conductive paste of this embodiment 25 can be measured using, for example, a commercially available dynamic viscoelasticity measuring device (for example, DMS6100 manufactured by Hitachi High-Technologies Corporation).

[0072] In the conductive paste of this embodiment, the conductive paste is applied to a PTFE plate, the temperature is increased from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes. The resulting cured product has a thickness of 0.3 mm, a width of 4 mm, and a length of 10 mm. The storage modulus E' at 250°C of the cured product is measured using a dynamic viscoelasticity measuring device under conditions of a tensile mode and a frequency of 10 Hz. 250 From the viewpoint of further improving the reliability of the semiconductor device, the pressure is preferably 10 MPa or more, more preferably 30 MPa or more, even more preferably 50 MPa or more, even more preferably 70 MPa or more, even more preferably 100 MPa or more, and is preferably 400 MPa or less, more preferably 350 MPa or less, even more preferably 300 MPa or less, even more preferably 250 MPa or less.

[0073] Storage modulus E' of the conductive paste of this embodiment 250 can be measured using, for example, a commercially available dynamic viscoelasticity measuring device (for example, DMS6100 manufactured by Hitachi High-Technologies Corporation).

[0074] The glass transition temperature of the conductive paste of this embodiment, measured by dynamic viscoelasticity measurement, is preferably 30°C or higher, more preferably 35°C or higher, even more preferably 40°C or higher, even more preferably 45°C or higher, even more preferably 50°C or higher, from the viewpoint of improving the performance balance between reliability and heat resistance of the semiconductor device, and is preferably 100°C or lower, more preferably 95°C or lower, even more preferably 90°C or lower, even more preferably 85°C or lower, even more preferably 80°C or lower.

[0075] The glass transition temperature of the conductive paste of this embodiment can be measured using, for example, a commercially available dynamic viscoelasticity measuring device (for example, DMS6100 manufactured by Hitachi High-Technologies Corporation).

[0076] The conductive paste of this embodiment has an average linear expansion coefficient α1, measured by Method 4 below, of preferably 20 ppm / °C or more, more preferably 25 ppm / °C or more, even more preferably 30 ppm / °C or more, even more preferably 35 ppm / °C or more, even more preferably 40 ppm / °C or more, from the viewpoint of improving the performance balance between the reliability and heat resistance of the semiconductor device, and is preferably 100 ppm / °C or less, more preferably 90 ppm / °C or less, even more preferably 80 ppm / °C or less, even more preferably 70 ppm / °C or less, even more preferably 60 ppm / °C or less, even more preferably 50 ppm / °C or less.

[0077] (Method 4) The conductive paste is applied to a PTFE plate, heated from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes to prepare a test piece with a thickness of 0.2 mm, a width of 4 mm, and a length of 10 mm.The average linear expansion coefficient α1 (ppm / °C) of the obtained test piece is measured at 0 to 40°C using a thermomechanical analyzer under the conditions of a measurement temperature range of 0 to 330°C and a heating rate of 10°C / min.

[0078] The average linear expansion coefficient α1 of the conductive paste of this embodiment can be measured using, for example, a commercially available thermomechanical analyzer (for example, SS7100 manufactured by Hitachi High-Technologies Corporation).

[0079] The conductive paste of this embodiment has an average linear expansion coefficient α2 measured by Method 5 below, which is preferably 50 ppm / °C or more, more preferably 60 ppm / °C or more, even more preferably 70 ppm / °C or more, and even more preferably 80 ppm / °C or more, from the viewpoint of improving the performance balance between the reliability and heat resistance of the semiconductor device, and is preferably 200 ppm / °C or less, more preferably 180 ppm / °C or less, even more preferably 150 ppm / °C or less, even more preferably 130 ppm / °C or less, and even more preferably 120 ppm / °C or less.

[0080] (Method 5) The conductive paste is applied to a PTFE plate, heated from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes to prepare a test piece with a thickness of 0.2 mm, a width of 4 mm, and a length of 10 mm.Then, using a thermomechanical analyzer, the average linear expansion coefficient α2 (ppm / °C) of the obtained test piece is measured at 110 to 150°C under the conditions of a measurement temperature range of 0 to 330°C and a heating rate of 10°C / min.

[0081] The average linear expansion coefficient α1 of the conductive paste of this embodiment can be measured using, for example, a commercially available thermomechanical analyzer (for example, SS7100 manufactured by Hitachi High-Technologies Corporation).

[0082] The viscosity η5 of the conductive paste of this embodiment, measured using a BF viscometer and a cone rotor with an angle of 1.565 deg and a radius of 12 mm at a rotation speed of 5 rpm and a temperature of 25°C, is preferably 1.0 Pa·s or more, more preferably 3.0 Pa·s or more, even more preferably 5.0 Pa·s or more, and even more preferably 8.0 Pa·s or more, from the viewpoint of improving the performance balance between the reliability of semiconductor devices and the workability when using the conductive paste, and is preferably 30.0 Pa·s or less, more preferably 25.0 Pa·s or less, even more preferably 20.0 Pa·s or less, even more preferably 15.0 Pa·s or less, and even more preferably 12.0 Pa·s or less. The viscosity η5 of the conductive paste of this embodiment was measured one minute after the rotation speed of the BF viscometer was set to 5 rpm.

[0083] The viscosity η of the conductive paste of this embodiment is measured using a BF type viscometer and a cone rotor with an angle of 1.565 deg and a radius of 12 mm at a rotation speed of 0.5 rpm and a temperature of 25°C. 0.5 From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the workability when using the conductive paste, the viscosity is preferably 10.0 Pa s or more, more preferably 20.0 Pa s or more, even more preferably 30.0 Pa s or more, even more preferably 40.0 Pa s or more, and even more preferably 50.0 Pa s or more, and is preferably 100.0 Pa s or less, more preferably 90.0 Pa s or less, even more preferably 80.0 Pa s or less, and even more preferably 70.0 Pa s or less. The viscosity η of the conductive paste of this embodiment 0.5 The results were taken 6 minutes after the rotation speed of the BF viscometer was set to 0.5 rpm.

[0084] The viscosity η of the conductive paste of this embodiment relative to the viscosity η 0.5 Viscosity ratio Ti(η 0.5From the viewpoint of improving the performance balance between the reliability of the semiconductor device and the workability when using the conductive paste, / η5) is preferably 1.0 or more, more preferably 3.0 or more, and even more preferably 5.0 or more, and is preferably 10.0 or less, more preferably 9.0 or less, even more preferably 8.0 or less, and even more preferably 7.0 or less.

[0085] The above-described physical properties of the conductive paste of this embodiment can be obtained by appropriately adjusting the composition and type of each component contained in the conductive paste, particularly by adjusting the type and content of the silane coupling agent, peroxide, and stress reducing agent contained in the conductive paste.

[0086] [Conductive paste manufacturing method] The method for preparing the conductive paste of this embodiment is not particularly limited, but for example, the components described above can be premixed, kneaded using a triple roll mill, and then vacuum degassed to obtain a paste-like composition. In this case, by appropriately adjusting the preparation conditions, for example, by performing premixing under reduced pressure, the long-term workability of the conductive paste can be improved.

[0087] [Application] The use of the conductive paste of this embodiment will be described. The conductive paste of this embodiment is suitable for use in semiconductor devices such as semiconductor packages. Specific types of semiconductor packages include MAP (Mold Array Package), QFP (Quad Flat Package), SOP (Small Outline Package), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), BGA (Ball Grid Array), LF-BGA (Lead Flame BGA), FCBGA (Flip Chip BGA), MAPBGA (Molded Array Process BGA), eWLB (Embedded Wafer-Level BGA), Fan-In type eWLB, and Fan-Out type eWLB.

[0088] <Semiconductor device> An example of a semiconductor device using the conductive paste of this embodiment will be described below. FIG. 1 is a cross-sectional view showing an example of a semiconductor device according to this embodiment. The semiconductor device 100 of this embodiment comprises a base material 30, an adhesive layer 10 on the base material 30, and a semiconductor element 20 on the adhesive layer 10, and the adhesive layer 10 contains a cured product of the conductive paste of this embodiment. The semiconductor element 20 and the substrate 30 are electrically connected via, for example, bonding wires 40. The semiconductor element 20 is sealed with, for example, sealing resin 50.

[0089] Here, the lower limit of the thickness of the adhesive layer 10 is preferably 5 μm or more, more preferably 10 μm or more. This allows the conductive paste of this embodiment to exhibit suitable adhesive strength, thereby improving the operational reliability of the semiconductor device. The upper limit of the thickness of the adhesive layer 10 is preferably 50 μm or less, and more preferably 30 μm or less. This reduces the absolute value of warpage of the semiconductor device, thereby reducing changes in warpage due to moisture absorption.

[0090] 1, the substrate 30 is, for example, a lead frame. In this case, the semiconductor element 20 is mounted on a die pad 32 (substrate 30) via an adhesive layer 10. The semiconductor element 20 is electrically connected to outer leads 34 (substrate 30) via bonding wires 40, for example. The substrate 30, which is a lead frame, is made of, for example, a 42 alloy or a Cu frame.

[0091] The substrate 30 may be an organic substrate or a ceramic substrate. The organic substrate is preferably made of, for example, epoxy resin, cyanate resin, maleimide resin, or the like. The surface of the substrate 30 may be coated with a metal such as silver or gold, thereby improving the adhesion between the adhesive layer 10 and the substrate 30.

[0092] FIG. 2 is a cross-sectional view showing an example of the semiconductor device 100 according to the present embodiment, which is a modification of FIG. In the semiconductor device 100 of this modified example, the base material 30 is, for example, an interposer. A plurality of solder balls 52, for example, are formed on the other surface of the base material 30, which is an interposer, opposite to the surface on which the semiconductor element 20 is mounted. In this case, the semiconductor device 100 is connected to another wiring board via the solder balls 52.

[0093] [Method of manufacturing a semiconductor device] An example of a method for manufacturing the semiconductor device of this embodiment will be described. First, the conductive paste of this embodiment is applied onto the substrate 30, and then the semiconductor element 20 is placed thereon. That is, the substrate 30, the conductive paste, and the semiconductor element 20 are stacked in this order. The method for applying the conductive paste of this embodiment is not limited, but specifically, dispensing, printing, inkjet method, etc. can be used. Next, the conductive paste of this embodiment is heat-treated to harden the conductive paste. This heat treatment causes the conductive metal particles in the conductive paste to aggregate, eliminating the interfaces between the conductive metal particles and forming a thermally conductive layer in the adhesive layer 10. The heat treatment conditions can be set, for example, to raise the temperature from room temperature (25°C) to a temperature of 100°C to 300°C over 10 minutes to 2 hours, and then continue heat treatment at the elevated temperature for 10 minutes to 2 hours. This bonds the substrate 30 and the semiconductor element 20 via the adhesive layer 10. Next, the semiconductor element 20 and the substrate 30 are electrically connected using bonding wires 40. Next, the semiconductor element 20 is sealed with a sealing resin 50. This completes the manufacture of a semiconductor device.

[0094] Although the embodiments of the present invention have been described above, these are merely examples of the present invention, and various other configurations may be adopted. Furthermore, the present invention is not limited to the above-described embodiments, and modifications and improvements within the scope of achieving the object of the present invention are included in the present invention. [Example]

[0095] The present invention will be explained in more detail below with reference to examples, but the present invention is not limited to these examples in any way.

[0096] <Examples and Comparative Examples> For each example and comparative example, a conductive paste was prepared in the blending amounts (parts by mass) shown in Table 1 and evaluated. Specifically, the components in the blending amounts shown in the "Varnish composition" in Table 1 were first kneaded at room temperature using a three-roll mill, and then vacuum degassed to prepare a varnish-like mixture. Next, the obtained varnish-like mixture, conductive metal particles, and organic particles were mixed using the blending amounts (parts by mass) shown in the "Paste composition" in Table 1, and the mixture was kneaded at room temperature using a three-roll mill to obtain a paste-like composition (conductive paste). The components used in each example and comparative example are as follows.

[0097] (base resin) Base resin 1: Modified bisphenol A epoxy resin (DIC Corporation, EXA-4850-1000, mass average molecular weight: 700)

[0098] (hardening agent) Curing agent 1: Bisphenol F (DIC Corporation, DIC-BPF)

[0099] (monomer) Monomer 1: Bisphenol-F-diglycidyl ether (Nippon Kayaku Co., Ltd., RE-403S, molecular weight: 330) Monomer 2: Ethylene glycol dimethacrylate (Kyoeisha Chemical Co., Ltd., Light Ester EG, molecular weight: 198)

[0100] (Silane coupling agent) Silane coupling agent 1: bis(3-(triethoxysilyl)propyl)tetrasulfide (sulfide silane, manufactured by Osaka Soda Co., Ltd., Kabras-4)

[0101] (curing accelerator) Curing accelerator 1: 2-phenyl-4,5-dihydroxymethylimidazole (imidazole compound, Shikoku Chemicals Corporation, 2PHZ-PW)

[0102] (Polymerization initiator) Polymerization initiator 1: 1,1-di(tert-butylperoxy)cyclohexane (NOF Corporation, Perhexa CS, "Perhexa" is a registered trademark)

[0103] (conductive metal particles) Conductive metal particles 1: scaly silver particles (average particle size D 50 :8.0μm, manufactured by Fukuda Metal Foil & Powder Industry Co., Ltd., HKD-10A)

[0104] (organic particles) Organic particles 1: Divinylbenzene resin particles (average particle diameter D 50 : 10 μm, Sekisui Chemical Co., Ltd., Micropearl SP-210)

[0105] The average particle diameter D of the conductive metal particles and the organic particles50 The measured value at 50% of the integrated value of the volume-based particle size distribution was obtained by a laser diffraction scattering measurement method using a laser diffraction particle size distribution analyzer (SALD-7000, manufactured by Shimadzu Corporation).

[0106] [Physical property evaluation] The physical properties of the conductive pastes obtained in the examples and comparative examples were evaluated by the following methods.

[0107] (Cure shrinkage rate) The cure shrinkage of the conductive paste of each example and each comparative example was measured by the following method. The conductive pastes of each example and comparative example were applied to the pads of a square test copper lead frame measuring 10 mm long x 10 mm wide x 0.15 mm thick. A 2.0 mm long x 2.0 mm wide x 0.35 mm thick silicon chip was then placed on the conductive paste so that the center of the test copper lead frame and the center of the silicon chip were vertically overlapping. A load of 100 gf was then applied perpendicularly to the silicon chip surface, resulting in a laminate with an adhesive layer thickness of 20 ± 5 μm. The pre-heat-treated laminate was then placed in an electric furnace thoroughly purged with nitrogen, and the temperature was raised from 25 °C to 175 °C at a constant rate over 30 minutes, followed by heat treatment at 175 °C for 60 minutes to obtain a post-heat-treated laminate. The cure shrinkage was calculated using the following formula (1), where the thickness of the adhesive layer of the laminate before heat treatment was t0 [μm] and the thickness of the adhesive layer of the laminate after heat treatment was t1 [μm]. The measurement results are shown in Table 1. Curing shrinkage rate (%) = ((t0-t1) / t0) × 100 (1)

[0108] (mass reduction rate) The mass reduction rate of the conductive paste of each example and each comparative example was measured by the following method. 30 mg of the conductive paste from each Example and Comparative Example was placed in an aluminum open cell and set in the measurement section of a simultaneous thermogravimetric and differential thermal analyzer (Hitachi High-Tech Corporation, model number: TG / DTA7200). The temperature was raised from 25°C to 175°C at a rate of 5°C / min, and the mass loss rate was measured after holding at 175°C for 60 minutes. The measurement results are shown in Table 1.

[0109] (Die shear strength, rate of change) The die shear strength of the conductive paste of each example and each comparative example was measured by the following method. The conductive pastes of each example and comparative example were applied to the pad portion of a square test copper lead frame measuring 10 mm long, 10 mm wide, and 0.15 mm thick. A 2.0 mm long, 2.0 mm wide, and 0.35 mm thick silicon chip was then placed on the conductive paste so that the center of the test copper lead frame and the center of the silicon chip were vertically overlapping. A load of 100 gf was then applied perpendicularly to the silicon chip surface, resulting in a laminate with an adhesive layer thickness of 20 ± 5 μm. The laminate was then placed in an electric furnace thoroughly purged with nitrogen, heated from 25°C to 175°C at a constant rate over 30 minutes, and heat-treated at 175°C for 60 minutes to obtain a test specimen. The test specimens were then subjected to a high-temperature, high-humidity test in which they were maintained at 120°C and 100% humidity for 24 hours. For each of the test pieces before and after the high-temperature, high-humidity test, the die shear strength at 260°C was measured using a universal bond tester at a measurement speed of 500 μm / s and a measurement temperature of 260°C by pressing a jig against the side of the silicon chip at a point 50 μm away in the vertical direction from the top surface of the test copper lead frame. The failure mode of test pieces that broke in the die shear strength measurement test was also visually confirmed. If peeling occurred at the interface between the test copper lead frame and the cured conductive paste, it was marked as "LF interface," and if cracks were present in the cured conductive paste itself, it was marked as "cohesion," as shown in Table 1.

[0110] The die shear strength of the test piece before the high-temperature, high-humidity test was defined as D0, and the die shear strength of the test piece after the high-temperature, high-humidity test was defined as D1. The rate of change in die shear strength was calculated using the following formula (2). The measurement results are shown in Table 1. Die shear strength change rate (%) = ((D0-D1) / D0) × 100 (2)

[0111] (storage modulus, glass transition temperature (Tg)) The storage modulus of the conductive paste of each Example and Comparative Example was measured by the following method. The conductive paste of each Example and Comparative Example was applied to a PTFE plate, and the temperature was raised from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes to prepare a test piece with a thickness of 0.3 mm, a width of 4 mm, and a length of 10 mm. The storage modulus E' at 25°C was measured for the obtained test piece using a dynamic viscoelasticity measuring instrument (Hitachi High-Tech Corporation, product number: DMS6100) under the conditions of tension mode and a frequency of 10 Hz. 25 and storage modulus E' at 250°C 250 The tan δ was measured under the conditions of a heating rate of 5°C / min, a frequency of 10Hz, and a load of 800g, and the temperature at the peak of tan δ was read as the glass transition temperature. The measurement results are shown in Table 1.

[0112] (coefficient of linear expansion) The linear expansion coefficient of the resulting conductive paste was measured for each example and comparative example. Each conductive paste from each example and comparative example was applied to a PTFE plate, heated from 25°C to 175°C at a constant rate over 30 minutes, and then heated at 175°C for 60 minutes to prepare test pieces with a thickness of 0.2 mm, a width of 4 mm, and a length of 10 mm. The resulting test pieces were then measured for their average linear expansion coefficient α1 (ppm / °C) between 0 and 40°C and average linear expansion coefficient α2 (ppm / °C) between 110 and 150°C using a thermomechanical analyzer (Hitachi High-Tech Corporation, model number: SS7100) at a temperature range of 0 to 330°C and a heating rate of 5°C / min. The measurement results are shown in Table 1.

[0113] (viscosity) The viscosity of the conductive pastes of each example and each comparative example was measured at a temperature of 25°C using a BF type viscometer (manufactured by Brookfield, product number: HBDV-3) and a cone rotor with an angle of 1.565 deg and a radius of 12 mm. The measurement order was viscosity η5 at a rotation speed of 5 rpm, followed by viscosity η at a rotation speed of 0.5 rpm. 0.5 The measurement was carried out in the following order. The viscosity η5 value was determined one minute after the rotation speed of the BF viscometer was set to 5 rpm. 0.5 The value was taken 6 minutes after the rotation speed of the BF viscometer was set to 0.5 rpm. In addition, the measured viscosity η5 and viscosity η 0.5 From the above, the viscosity η 0.5 Viscosity ratio Ti(η 0.5 The measurement results are shown in Table 1.

[0114] (MSL) The mounting reliability of semiconductor devices using the conductive pastes of each example and each comparative example was evaluated. To evaluate the mounting reliability, the Moisture Sensitivity Level (MSL) performance was measured. The MSL performance was measured as MSL L3 in accordance with JEDEC STANDARD 22-A113D. The detailed method is described below. The conductive paste of each example and comparative example was applied to the pad portion of a square test copper lead frame measuring 10 mm long x 10 mm wide x 0.15 mm thick. A 5.0 mm long x 5.0 mm wide x 0.35 mm thick silicon chip was placed on the conductive paste so that the center of the surface of the test copper lead frame and the center of the surface of the silicon chip overlapped vertically. A load of 200 gf was then applied vertically to the surface of the silicon chip to obtain a laminate with an adhesive layer thickness of 10 ± 2 μm. The pre-heat-treated laminate was then placed in an electric furnace thoroughly purged with nitrogen, heated from 25 ° C to 175 ° C at a constant rate over 30 minutes, and heat-treated at 175 ° C for 60 minutes to obtain a cured product. Next, the cured product was sealed with an epoxy resin composition for semiconductor encapsulation (EME-G700HA, manufactured by Sumitomo Bakelite Co., Ltd.) so that the package size was 14 mm length × 14 mm width × 1 mm thickness, and the epoxy resin composition for semiconductor encapsulation was cured at a temperature of 175°C for 4 hours to obtain a semiconductor device. This semiconductor device was subjected to moisture absorption treatment for 192 hours under conditions of 30°C and relative humidity of 60%, and then to IR reflow treatment (reflow three times at 260°C). Next, the semiconductor device after IR reflow treatment was evaluated using a transmission ultrasonic flaw detector for the presence or absence of delamination at the interface between the lead frame and the silicon chip. Evaluation was performed on eight semiconductor devices, and the average value was evaluated according to the following criteria. The evaluation results are shown in Table 1. A: At the interface between the copper lead frame and the cured paste adhesive composition, the interface between the cured paste adhesive composition and the silicon chip, and the interface between the silicon chip and the cured epoxy resin composition for semiconductor encapsulation, the area of the peeled interfaces was less than 20% of a 5 mm x 5 mm area. B: The area of the peeled interfaces at the interface between the copper lead frame and the cured paste adhesive composition, the interface between the cured paste adhesive composition and the silicon chip, and the interface between the silicon chip and the cured epoxy resin composition for semiconductor encapsulation was 20% or more relative to a 5 mm x 5 mm area.

[0115] [Table 1]

[0116] It was shown that each example can provide a semiconductor device with improved reliability compared to each comparative example. [Explanation of symbols]

[0117] 10 Adhesive layer 20 Semiconductor elements 30 Base material 32 die pad 34 outer lead 40 Bonding Wire 50 Sealing resin 52 solder balls 100 Semiconductor device

Claims

1. A conductive paste comprising conductive metal particles and a base resin, A conductive paste according to the following method 1, wherein the cure shrinkage of the conductive paste is 0.1% or more and less than 18.0%. (Method 1) The conductive paste was applied to the pad portion of a square test copper lead frame measuring 10 mm long x 10 mm wide x 0.15 mm thick, and a 2.0 mm long x 2.0 mm wide x 0.35 mm thick silicon chip was placed on the conductive paste so that the center of the surface of the test copper lead frame and the center of the surface of the silicon chip were vertically overlapped. A load of 100 gf was then applied perpendicularly to the surface of the silicon chip to obtain a pre-heat-treatment laminate with an adhesive layer thickness of 20±5 μm. The pre-heat-treatment laminate was then placed in an electric furnace thoroughly purged with nitrogen, heated from 25°C to 175°C at a constant rate over 30 minutes, and heat-treated at 175°C for 60 minutes to obtain a post-heat-treatment laminate. The thickness of the adhesive layer of the laminate before heat treatment is t ０ [μm], the thickness of the adhesive layer of the laminate after the heat treatment is t １ [μm], and the cure shrinkage is calculated by the following formula (1). Hardening shrinkage (%) = ((t ０ -t １ ) / t ０ )×100 (1)

2. The conductive paste according to claim 1 , wherein the mass reduction rate of the conductive paste obtained by the following method 2 is 0.1% or more and 5.0% or less. (Method 2) 30 mg of the conductive paste is placed in an aluminum open cell, which is set in the measurement section of a simultaneous thermogravimetric and differential thermal analyzer (TG-DTA), and the temperature is raised from 25°C to 175°C at a rate of 5°C / min. After holding at 175°C for 60 minutes, the mass loss rate is measured.

3. 2. The conductive paste according to claim 1, wherein the rate of change in die shear strength of the conductive paste measured by the following method 3 is 0.1% or more and 30% or less. (Method 3) The conductive paste was applied to the pad portion of a square test copper lead frame measuring 10 mm long x 10 mm wide x 0.15 mm thick, and a 2.0 mm long x 2.0 mm wide x 0.35 mm thick silicon chip was placed on the conductive paste so that the center of the surface of the test copper lead frame and the center of the surface of the silicon chip were vertically overlapped. A load of 100 gf was then applied perpendicular to the surface of the silicon chip to obtain a laminate with an adhesive layer thickness of 20 ± 5 μm. The laminate was then placed in an electric furnace thoroughly purged with nitrogen, and the temperature was raised from 25 ° C to 175 ° C at a constant rate over 30 minutes, followed by heat treatment at 175 ° C for 60 minutes to obtain a test specimen. The test specimen was then subjected to a high-temperature, high-humidity test in which it was maintained at a temperature of 120 ° C and a humidity of 100% for 24 hours. For each of the test pieces before the high-temperature, high-humidity test and the test pieces after the high-temperature, high-humidity test, the die shear strength at 260°C is measured using a universal bond tester at a measurement speed of 500 μm / s and a measurement temperature of 260°C by pressing a jig against the side of the silicon chip at a point 50 μm away in the vertical direction from the top surface of the test copper lead frame. The die shear strength of the test piece before the high temperature and high humidity test was D ０ The die shear strength of the test piece after the high temperature and high humidity test is D １ The rate of change in die shear strength is calculated using the following formula (2). Change rate of die shear strength (%) = ((D ０ -D １ ) / D ０ ) x 100 (2)

4. The die shear strength (D ０ 4. The conductive paste according to claim 3, wherein the compressive strength is 5N or more and 100N or less.

5. The conductive paste according to any one of claims 1 to 4, further comprising a silane coupling agent.

6. The conductive paste according to claim 5 , wherein the silane coupling agent comprises one or more selected from the group consisting of epoxy silane, sulfide silane, (meth)acrylic silane, and amino silane.

7. The conductive paste of claim 6 , wherein the silane coupling agent includes both an epoxy silane and a sulfide silane.

8. The conductive paste according to claim 5 , wherein the content of the silane coupling agent is 0.01% by mass or more and 5.0% by mass or less, when the entire conductive paste is taken as 100% by mass.

9. The conductive paste according to any one of claims 1 to 4, wherein the conductive metal particles include silver particles.

10. The conductive paste according to any one of claims 1 to 4, wherein the content of the conductive metal particles is 50% by mass or more and 90% by mass or less when the entire conductive paste is 100% by mass.

11. The conductive paste according to any one of claims 1 to 4, wherein the base resin comprises a thermosetting resin.

12. The viscosity η is measured using a BF type viscometer and a cone rotor with an angle of 1.565 deg and a radius of 12 mm at a rotation speed of 5 rpm and a temperature of 25°C. ５ The viscosity η measured using a BF type viscometer and a cone rotor with an angle of 1.565 deg and a radius of 12 mm at a rotation speed of 0.5 rpm and a temperature of 25°C. ０．５ Viscosity ratio Ti (η ０．５ / η ５ 5. The conductive paste according to claim 1, wherein the value of (a) is 1.0 or more and 10.0 or less.

13. A substrate; an adhesive layer on the substrate; a semiconductor element on the adhesive layer, A semiconductor device, wherein the adhesive layer comprises a cured product of the conductive paste according to any one of claims 1 to 4.

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