Substrate processing apparatus and temperature monitoring method

Abstract

To provide a technique for measuring temperatures at a plurality of locations on a rotating stage.SOLUTION: A substrate processing apparatus comprises: a rotating stage; a plurality of temperature sensors arranged in a distributed manner on the stage; a conversion unit which processes a signal output from each of the plurality of temperature sensors; and a switching unit which switches the temperature sensors connected to the conversion unit. The switching unit includes: a plurality of electrode parts which are provided in one-to-one correspondence with the plurality of temperature sensors respectively, arranged side by side along a rotational direction of the stage, and each have an electrode connected to any one of the corresponding temperature sensors; and a contact part which is fixed to the stage, is in contact with the electrode of any one of the plurality of electrode parts and has a contact element connected to the switching unit.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a temperature monitoring method. [Background technology]

[0002] Patent Document 1 discloses a processing apparatus having a mounting table structure, which includes, in a mounting table body, an inner peripheral zone heating element on the center side of the mounting table, and an outer peripheral zone heating element outside the inner peripheral zone heating element.

[0003] Patent Document 2 discloses a semiconductor manufacturing device in which a wafer is held on a wafer stage by electrostatic attraction. Patent Document 2 also discloses that the wafer stage is divided into multiple attraction regions, and that the temperature of the wafer is measured by a fluorescent thermometer provided in each attraction region. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-222931 [Patent Document 2] Special Publication No. 2005-136025 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides techniques for measuring temperature at multiple locations on a rotating stage. [Means for solving the problem]

[0006] According to the present disclosure, there is provided a substrate processing apparatus comprising: a rotating stage; a plurality of temperature sensors distributed across the stage; a conversion unit that processes signals output by each of the plurality of temperature sensors; and a switching unit that switches the temperature sensor connected to the conversion unit, wherein the switching unit comprises a plurality of electrode units that are arranged in a one-to-one correspondence with each of the plurality of temperature sensors and are arranged in a line along the rotation direction of the stage and have electrodes that connect to any of the corresponding plurality of temperature sensors; and a contact unit that is fixed to the stage and contacts the electrode on any one of the plurality of electrode units at a time and has a contactor that connects to the switching unit. [Effects of the Invention]

[0007] The present disclosure provides techniques for measuring temperature at multiple locations on a rotating stage. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing an outline of a substrate processing apparatus according to a first embodiment when a stage is rotating. [Figure 2] FIG. 2 is a diagram showing an outline of the substrate processing apparatus according to the first embodiment when the stage is being cooled. [Figure 3] FIG. 3 is a plan view showing an outline of the arrangement of temperature sensors and measurement regions on a stage of the substrate processing apparatus according to the first embodiment. [Figure 4] FIG. 4 is a partial cross-sectional view showing an outline of the arrangement of electrode units on a stage of the substrate processing apparatus according to the first embodiment. [Figure 5] FIG. 5 is a cross-sectional view showing an outline of the arrangement of electrode units on a stage of the substrate processing apparatus according to the first embodiment. [Figure 6] FIG. 6 is a diagram illustrating connections of temperature sensors in the substrate processing apparatus according to the first embodiment. [Figure 7] FIG. 7 is a diagram (part 1) illustrating temperature sensors connected in the substrate processing apparatus according to the first embodiment. [Figure 8] FIG. 8 is a diagram (part 2) illustrating temperature sensors connected in the substrate processing apparatus according to the first embodiment. [Figure 9] FIG. 9 is a diagram (part 3) illustrating temperature sensors connected in the substrate processing apparatus according to the first embodiment. [Figure 10] FIG. 10 is a plan view showing an outline of the arrangement of temperature sensors and measurement areas on a stage of a substrate processing apparatus according to the second embodiment. [Figure 11] FIG. 11 is a partial cross-sectional view showing an outline of the arrangement of electrode units on a stage of a substrate processing apparatus according to a third embodiment. [Figure 12] FIG. 12 is a diagram illustrating connections of temperature sensors in a substrate processing apparatus according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described with reference to the accompanying drawings. Note that the present disclosure is not limited to these examples, but is defined by the claims, and is intended to include all modifications within the meaning and scope of the claims.

[0010] In addition, with regard to the description of the specification and drawings of each embodiment, components having substantially the same or corresponding functional configurations may be designated by the same or corresponding reference numerals to avoid redundant explanation. In addition, the scale of each part in the drawings may differ from the actual scale to facilitate understanding.

[0011] First Embodiment A substrate processing apparatus according to a first embodiment will be described. The substrate processing apparatus according to the first embodiment includes a rotating stage, multiple temperature sensors distributed across the stage, a conversion unit that processes signals output by each of the multiple temperature sensors, and a switching unit that switches the temperature sensor connected to the conversion unit. The switching unit in the substrate processing apparatus according to the first embodiment includes multiple electrode units that are arranged in a one-to-one correspondence with each of the multiple temperature sensors and are aligned along the direction of rotation of the stage, and each have an electrode that connects to one of the corresponding multiple temperature sensors. The switching unit in the substrate processing apparatus according to the first embodiment also includes a contact unit that is fixed to the stage and has a contactor that contacts one of the electrodes in the multiple electrode units at a time and connects to the conversion unit.

[0012] The substrate processing apparatus according to the first embodiment will be described in detail with reference to the drawings. Fig. 1 is a schematic diagram showing the state in which a stage 20 of a substrate processing apparatus 1, which is an example of the substrate processing apparatus according to the first embodiment, rotates. Fig. 2 is a schematic diagram showing the state in which a stage 20 of a substrate processing apparatus 1, which is an example of the substrate processing apparatus according to the first embodiment, is cooled.

[0013] The substrate processing apparatus 1 may be, for example, a substrate processing apparatus that supplies a processing gas into a processing chamber 10 and performs a desired processing (e.g., a film formation process) on a substrate W. The substrate processing apparatus 1 may be, for example, a CVD (Chemical Vapor Deposition) apparatus, an ALD (Atomic Layer Deposition) apparatus, or the like. The substrate processing apparatus 1 may also be, for example, a substrate processing apparatus that supplies a processing gas into the processing chamber 10 and sputters a target provided in the processing chamber 10 to perform a desired processing (e.g., a film formation process) on a substrate W. The substrate processing apparatus 1 may be, for example, a PVD (Physical Vapor Deposition) apparatus, or the like. The substrate processing apparatus 1 heats or cools the substrate W to a desired temperature.

[0014] The substrate processing apparatus 1 includes a processing chamber 10, a stage 20 on which a substrate W is placed inside the processing chamber 10, a refrigeration unit 30, a rotation unit 40 that rotates the stage 20, and an elevation unit 50 that raises and lowers the refrigeration unit 30. The substrate processing apparatus 1 also includes a slip ring 60 for supplying power to the chuck electrode 24 and heating unit 26 of the rotating stage 20. The substrate processing apparatus 1 also includes a control unit 70 that controls various devices such as the refrigeration unit 30, the rotation unit 40, and the elevation unit 50.

[0015] The processing vessel 10 forms an internal space 10S. The processing vessel 10 is configured so that the internal space 10S can be depressurized to an ultra-high vacuum by operating an exhaust device (not shown) such as a vacuum pump. The processing vessel 10 is also configured so that a desired gas used for substrate processing is supplied to the processing vessel 10 via a gas supply pipe (not shown) that communicates with a processing gas supply device (not shown).

[0016] The substrate processing apparatus 1 includes a stage 20 on which a substrate W is placed, inside a processing chamber 10. The stage 20 includes a base portion 21 and an electrostatic chuck .

[0017] The base portion 21 is formed of a material with high thermal conductivity (for example, copper (Cu)). The base portion 21 includes therein a heating portion 26, which is, for example, an electric heater. Electric power is supplied to the heating portion 26 via a slip ring 60 and wiring 64, which will be described later. The heating portion 26, to which power is supplied, heats the base portion 21. As the base portion 21 is heated, the electrostatic chuck 23 is heated. As the electrostatic chuck 23 is heated, the substrate W attracted to the electrostatic chuck 23 is heated.

[0018] The electrostatic chuck 23 is provided on the upper surface of the base portion 21. The electrostatic chuck 23 has a chuck electrode 24 embedded in a dielectric film 25. A predetermined potential is applied to the chuck electrode 24 via a slip ring 60 and wiring 63, which will be described later. With this configuration, the substrate W can be attracted by the electrostatic chuck 23 and fixed to the upper surface of the stage 20.

[0019] The substrate processing apparatus 1 includes a refrigeration device 30 below the stage 20. The refrigeration device 30 is configured by stacking a refrigerator 31 and a refrigeration heat transfer medium 32. The refrigeration heat transfer medium 32 can also be called a cold drink. The refrigerator 31 holds the refrigeration heat transfer medium 32 and cools the upper surface of the refrigeration heat transfer medium 32 to an extremely low temperature. From the viewpoint of cooling capacity, the refrigerator 31 preferably uses a GM (Gifford-McMahon) cycle. The refrigeration heat transfer medium 32 is fixed on top of the refrigerator 31. An upper portion of the refrigeration heat transfer medium 32 is accommodated inside the processing vessel 10. The refrigeration heat transfer medium 32 is made of a material with high thermal conductivity (e.g., copper (Cu)). The outer shape of the refrigeration heat transfer medium 32 is approximately cylindrical. The refrigeration heat transfer medium 32 is arranged so that its center coincides with the central axis CL of the stage 20.

[0020] As will be described later, the substrate processing apparatus 1 includes a plurality of temperature sensors on the stage 20.

[0021] Furthermore, the stage 20 is rotatably supported by a rotation device 40. The stage 20 is rotated by the rotation device 40. The rotation device 40 has a rotation drive device 41, a fixed shaft 45, a rotating shaft 44, a housing 46, magnetic fluid seals 47 and 48, and a stand 49.

[0022] The rotary drive device 41 is a direct drive motor having a rotor 42 and a stator 43. The rotor 42 has a generally cylindrical shape extending coaxially with the rotary shaft 44 and is fixed to the rotary shaft 44. The stator 43 has a generally cylindrical shape with an inner diameter larger than the outer diameter of the rotor 42. The rotary drive device 41 may be in a form other than a direct drive motor, and may be in a form including a servo motor and a transmission belt, for example.

[0023] The rotating shaft 44 has a generally cylindrical shape that extends coaxially with the central axis CL of the stage 20. A fixed shaft 45 is provided radially inward of the rotating shaft 44. The fixed shaft 45 has a generally cylindrical shape that extends coaxially with the central axis CL of the stage 20. A housing 46 is provided radially outward of the rotating shaft 44. The housing 46 has a generally cylindrical shape that extends coaxially with the central axis CL of the stage 20, and is fixed to the processing vessel 10.

[0024] A magnetic fluid seal 47 is provided between the outer circumferential surface of the fixed shaft 45 and the inner circumferential circle of the rotating shaft 44. The magnetic fluid seal 47 rotatably supports the rotating shaft 44 relative to the fixed shaft 45 and seals the gap between the outer circumferential surface of the fixed shaft 45 and the inner circumferential circle of the rotating shaft 44, thereby separating the depressurizable interior space 10S of the processing vessel 10 from the outer space of the processing vessel 10. A magnetic fluid seal 48 is provided between the inner circumferential surface of the housing 46 and the outer circumferential circle of the rotating shaft 44. The magnetic fluid seal 48 rotatably supports the rotating shaft 44 relative to the housing 46 and seals the gap between the inner circumferential surface of the housing 46 and the outer circumferential circle of the rotating shaft 44, thereby separating the depressurizable interior space 10S of the processing vessel 10 from the outer space of the processing vessel 10. Thus, the rotating shaft 44 is rotatably supported by the fixed shaft 45 and the housing 46.

[0025] Furthermore, the refrigeration heat transfer medium 32 is inserted into the radially inner side of the fixed shaft 45 .

[0026] The stand 49 is provided between the rotating shaft 44 and the stage 20 and is configured to transmit the rotation of the rotating shaft 44 to the stand 49 .

[0027] With the above configuration, when the rotor 42 of the rotation drive device 41 rotates, the rotation shaft 44, the stand 49, and the stage 20 rotate relative to the refrigeration heat transfer medium 32 in the X1 direction.

[0028] The refrigeration unit 30 is supported by a lifting device 50 so that it can be raised and lowered freely. The lifting device 50 has an air cylinder 51, a link mechanism 52, a refrigeration unit support part 53, a linear guide 54, a fixing part 55, and a bellows 56.

[0029] The air cylinder 51 is a mechanical device whose rod moves linearly due to air pressure. The link mechanism 52 converts the linear movement of the rod of the air cylinder 51 into the lifting and lowering movement of the refrigeration device support part 53. The link mechanism 52 has a lever structure with one end connected to the air cylinder 51 and the other end connected to the refrigeration device support part 53. This allows a large pressing force to be generated with a small thrust of the air cylinder 51. The refrigeration device support part 53 supports the refrigeration device 30 (refrigerator 31, refrigeration heat medium 32). The movement of the refrigeration device support part 53 is guided in the lifting and lowering direction by a linear guide 54.

[0030] The fixed part 55 is fixed to the lower surface of the fixed shaft 45. A substantially cylindrical bellows 56 surrounding the refrigerator 31 is provided between the lower surface of the fixed part 55 and the upper surface of the refrigeration device support part 53. The bellows 56 is a metal bellows structure that is expandable and contractible in the vertical direction. As a result, the fixed part 55, the bellows 56, and the refrigeration device support part 53 seal the gap between the inner circumferential surface of the fixed shaft 45 and the outer circumferential circle of the refrigeration heat transfer medium 32, separating the internal space 10S of the treatment vessel 10, which can be depressurized, from the external space of the treatment vessel 10. The lower surface of the refrigeration device support part 53 is adjacent to the external space of the treatment vessel 10, and the area of the upper surface of the refrigeration device support part 53 surrounded by the bellows 56 is adjacent to the internal space 10S of the treatment vessel 10.

[0031] A slip ring 60 is provided below the rotating shaft 44 and the housing 46. The slip ring 60 includes a rotating body 61 including a metal ring and a fixed body 62 including a brush. The rotating body 61 has a generally cylindrical shape extending coaxially with the rotating shaft 44 and is fixed to the lower surface of the rotating shaft 44. The fixed body 62 has a generally cylindrical shape with an inner diameter slightly larger than the outer diameter of the rotating body 61 and is fixed to the lower surface of the housing 46. The slip ring 60 is electrically connected to a DC power supply (not shown) and supplies power from the DC power supply to wiring 63 via the brushes of the fixed body 62 and the metal ring of the rotating body 61. The slip ring 60 is also electrically connected to a heating power supply (not shown) and supplies power from the heating power supply to wiring 64 via the brushes of the fixed body 62 and the metal ring of the rotating body 61. This configuration allows a potential to be applied from the DC power supply to the chuck electrode 24 without causing twisting or the like in the wiring 63. Furthermore, power can be supplied from a heating power source to the heating unit 26. The structure of the slip ring 60 may be a structure other than a brush structure, such as a contactless power supply structure or a structure containing mercury-free or conductive liquid.

[0032] As will be described later, the substrate processing apparatus 1 includes a switching unit between the rotating shaft 44 and the housing 46.

[0033] The control device 70 is, for example, a computer, and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the substrate processing apparatus 1. The control device 70 may be provided inside or outside the substrate processing apparatus 1. When the control device 70 is provided outside the substrate processing apparatus 1, the control device 70 can control the substrate processing apparatus 1 via communication means such as wired or wireless.

[0034] 1, when a desired process is performed on the substrate W, the control device 70 controls the lifting device 50 (air cylinder 51) to separate the stage 20 from the refrigeration heat transfer medium 32, and controls the rotation device 40 (rotation drive device 41) to rotate the stage 20 on which the substrate W is placed. This makes it possible to improve the in-plane uniformity of the substrate process (e.g., film formation process, etc.) on the substrate W.

[0035] 2, when cooling the stage 20 and the substrate W placed on the stage 20, the control device 70 stops the rotation device 40 (rotation drive device 41) to stop the rotation of the stage 20, and controls the lifting device 50 (air cylinder 51) to bring the stage 20 into contact with the refrigeration heat medium 32. This allows the substrate W placed on the stage 20 to be cooled.

[0036] Here, if the pressing force pressing the refrigeration heat transfer medium 32 against the stage 20 is insufficient, a loss occurs in heat conduction, and the cooling capacity to the stage 20 becomes insufficient.

[0037] In contrast, in the substrate processing apparatus 1, the upper surface (contact surface) of the refrigeration heat transfer medium 32 comes into direct contact with the lower surface (contacted surface) of the stage 20, and the refrigeration heat transfer medium 32 comes into contact with and stops at the stage 20. As a result, the refrigeration heat transfer medium 32 comes into direct contact with the stage 20, thereby improving the cooling performance of the stage 20.

[0038] Furthermore, by reducing the pressure of the internal space 10S of the processing vessel 10 to create a vacuum atmosphere, a pressure difference (vacuum pressure difference) is generated between the upper surface of the refrigeration device support part 53, which is in a vacuum atmosphere, and the lower surface of the refrigeration device support part 53, which is in an air atmosphere, and a pressing force is generated that presses the refrigeration heat transfer medium 32 toward the stage 20. Therefore, a pressing force is applied to the refrigeration heat transfer medium 32 by the thrust of the air cylinder 51 and the pressure difference (vacuum pressure difference) generated between the upper and lower surfaces of the refrigeration device support part 53. As a result, when the refrigeration heat transfer medium 32 is brought into contact with the stage 20 to cool the stage 20, even if the stage 20 undergoes thermal contraction, the pressing force allows the refrigeration heat transfer medium 32 to rise in response to the thermal contraction of the stage 20.

[0039] The freezing heat transfer medium 32 is guided in its upward and downward movement by the freezing device support portion 53 and the linear guide 54. This allows the freezing heat transfer medium 32 to be raised and lowered while maintaining parallelism between the lower surface (contact surface) of the stage 20 and the upper surface (contact surface) of the freezing heat transfer medium 32.

[0040] In addition, a shim (not shown) may be inserted into the freezing heat medium 32 to adjust the parallelism of the upper surface (contact surface) of the freezing heat medium 32 with respect to the lower surface (contact surface) of the stage 20.

[0041] Furthermore, by using the air-driven air cylinder 51, the pressing force can be easily adjusted by air pressure.

[0042] Furthermore, when heating the stage 20 and the substrate W placed on the stage 20, the control device 70 supplies power to the heating unit 26 to heat the stage 20 and the substrate W placed on the stage 20.

[0043] Next, the arrangement of temperature sensors and temperature measurement zones on a stage of the substrate processing apparatus according to the first embodiment will be described. Fig. 3 is a plan view showing an outline of the arrangement of temperature sensors and measurement zones on a stage 20 of the substrate processing apparatus 1, which is an example of the substrate processing apparatus according to the first embodiment.

[0044] The substrate processing apparatus 1 is provided with a plurality of temperature sensors, specifically a total of 13 temperature sensors, on the stage 20. More specifically, the substrate processing apparatus 1 is provided with temperature sensors TC0 to TC12. The plurality of temperature sensors are distributed and arranged on the stage 20. Note that the number of temperature sensors is not limited to 13. The number of temperature sensors may be determined appropriately based on the number of locations to be measured.

[0045] Each of the temperature sensors TC0 to TC12 is, for example, a thermocouple. The thermocouple is, for example, a K-type thermocouple made of an alloy mainly containing nickel and chromium and an alloy mainly containing nickel and aluminum. Note that the type of thermocouple is not limited to the above example.

[0046] Furthermore, each of the temperature sensors TC0 to TC12 is not limited to a thermocouple, and may be, for example, a resistance temperature detector.

[0047] 3, the substrate processing apparatus 1 includes a temperature sensor TC0 at the center of the stage 20. The substrate processing apparatus 1 includes a measurement zone ZN0 around the temperature sensor TC0 on the stage 20. The temperature sensor TC0 measures the temperature in the measurement zone ZN0. The shape of the measurement zone ZN0 is circular in a plan view.

[0048] 3, the substrate processing apparatus 1 is provided with temperature sensors TC1, TC2, and TC3, in that order from the inside, on the right side of temperature sensor TC0. The substrate processing apparatus 1 has measurement zones ZN1, ZN2, and ZN3 around temperature sensors TC1, TC2, and TC3 on the stage 20, respectively. Temperature sensors TC1, TC2, and TC3 measure the temperatures in measurement zones ZN1, ZN2, and ZN3, respectively. Each of measurement zones ZN1, ZN2, and ZN3 has a shape that forms part of a circle in a plan view.

[0049] 3, the substrate processing apparatus 1 is provided with temperature sensors TC4, TC5, and TC6 above temperature sensor TC0, in that order from the inside. The substrate processing apparatus 1 has measurement zones ZN4, ZN5, and ZN6 around temperature sensors TC4, TC5, and TC6 on the stage 20, respectively. Temperature sensors TC4, TC5, and TC6 measure the temperatures in measurement zones ZN4, ZN5, and ZN6, respectively. Measurement zones ZN4, ZN6, and ZN6 each have a shape that forms part of a circle in a plan view.

[0050] 3, the substrate processing apparatus 1 is further provided with temperature sensors TC7, TC8, and TC9, in this order from the inside, on the left side of temperature sensor TC0. The substrate processing apparatus 1 has measurement zones ZN7, ZN8, and ZN9 around temperature sensors TC7, TC8, and TC9 on the stage 20, respectively. Temperature sensors TC7, TC8, and TC9 measure the temperatures in measurement zones ZN7, ZN8, and ZN9, respectively. Measurement zones ZN7, ZN9, and ZN9 each have a shape that forms part of a circle in a plan view.

[0051] 3, the substrate processing apparatus 1 is provided with temperature sensors TC10, TC11, and TC12 below the temperature sensor TC0, in that order from the inside. The substrate processing apparatus 1 has measurement zones ZN10, ZN11, and ZN12 around the temperature sensors TC10, TC11, and TC12 on the stage 20, respectively. The temperature sensors TC10, TC11, and TC12 measure the temperatures in the measurement zones ZN10, ZN11, and ZN12, respectively. The measurement zones ZN10, ZN11, and ZN12 each have a shape that forms part of a circle in a plan view.

[0052] Next, the connection between the temperature sensor and the electrode unit in the substrate processing apparatus according to the first embodiment will be described. Fig. 4 is a partial cross-sectional view showing an outline of the arrangement of the electrode unit on the stage 20 of the substrate processing apparatus 1, which is an example of the substrate processing apparatus according to the first embodiment. Fig. 5 is a cross-sectional view showing an outline of the arrangement of the electrode unit on the stage 20 of the substrate processing apparatus 1, which is an example of the substrate processing apparatus according to the first embodiment. In Fig. 4, the rotating shaft 44 and the stand 49 in Fig. 1 are collectively shown as a rotating body 22. The electrode unit is provided on the rotating shaft 44. In Fig. 5, details of the rotating body 22 are omitted and are shown by hatching.

[0053] The substrate processing apparatus 1 includes electrode units E0 to E12 corresponding to the temperature sensors TC0 to TC12, respectively. The temperature sensor TC0 is connected to the electrode unit E0. Similarly, the temperature sensors TC1 to TC12 are each connected to a corresponding one of the electrode units E1 to E12.

[0054] The substrate processing apparatus 1 includes electrode units arranged side by side in the rotation direction of the stage 20. The electrode units rotate together with the stage 20. The substrate processing apparatus 1 includes the electrode unit E0 on the lower side in Fig. 5. The substrate processing apparatus 1 also includes the electrode units E1 to E12 in a counterclockwise direction from the electrode unit E0.

[0055] Next, a description will be given of connections of temperature sensors in the substrate processing apparatus according to the first embodiment. Fig. 6 is a diagram illustrating connections of temperature sensors in the substrate processing apparatus 1, which is an example of the substrate processing apparatus according to the first embodiment.

[0056] The switching unit SL includes a plurality of electrode units (electrode unit E0 to electrode unit E12) and a contact unit B. The switching unit SL switches the temperature sensors (temperature sensors TC0 to TC12) connected to the conversion unit CTL.

[0057] The conversion unit CTL processes a signal output from a temperature sensor (any of the temperature sensors TC0 to TC12). By processing the signal output from the temperature sensor (any of the temperature sensors TC0 to TC12), the conversion unit CTL measures the temperature at the stage 20.

[0058] The conversion unit CTL is executed in the control device 70, for example.

[0059] The temperature sensor in the substrate processing apparatus 1 has, for example, two wires. If the temperature sensor in the substrate processing apparatus 1 is, for example, a thermocouple, taking the temperature sensor TC0 as an example, the temperature sensor TC0 has a positive side wire Wp0 and a negative side wire Wm0. For example, the temperature sensor TC0 measures the temperature using the thermoelectromotive force between the positive side wire Wp0 and the negative side wire Wm0. The electrode unit E0 has a positive side electrode Ep0 and a negative side electrode Em0. The positive side wire Wp0 is connected to the positive side electrode Ep0 of the electrode unit E0. The negative side wire Wm0 is connected to the negative side electrode Em0 of the electrode unit E0.

[0060] Like the electrode member E0, the electrode member E1 includes a positive electrode Ep1 and a negative electrode Em1. Similarly, each of the electrode members E2 to E12 includes a corresponding positive electrode Ep2 to Ep12 and a corresponding negative electrode Em2 to Em12.

[0061] The substrate processing apparatus 1 includes a contact unit B having a positive contact Bp and a negative contact Bm. The contact unit B is connected to one of the electrodes E0 to E12. The positive contact Bp and the negative contact Bm are, for example, conductive brushes. Specifically, the positive contact Bp and the negative contact Bm of the contact unit B are connected to the positive electrode and the negative electrode of one of the electrodes E0 to E12 that are connected to the contact unit B, respectively. For example, when the contact unit B is connected to the electrode E0, the positive contact Bp and the negative contact Bm of the contact unit B are connected to the positive electrode Ep0 and the negative electrode Em0, respectively.

[0062] 3, when the stage 20 rotates clockwise, the electrode portions E0 to E12 move in the direction of arrow A in FIG. 6. Therefore, at the contact portion B, the positive contactor Bp contacts the positive electrodes Ep0 to Ep12 in order. Similarly, the negative contactor Bm contacts the negative electrodes Em0 to Em12 in order. When the stage 20 further rotates clockwise and moves in the direction of arrow A from a state in which the positive contactor Bp contacts the positive electrode Ep12 and the negative contactor Bm contacts the negative electrode Em12, the positive contactor Bp contacts the positive electrode Ep0, and the negative contactor Bm contacts the negative electrode Em0, and this process is repeated.

[0063] In FIG. 3, when the stage 20 rotates counterclockwise, it moves in the direction opposite to the arrow A.

[0064] The operation of switching the temperature sensor for detection in the substrate processing apparatus according to the first embodiment will be described below. By describing the operation of switching the temperature sensor for detection in the substrate processing apparatus according to the first embodiment, a temperature monitoring method in the substrate processing apparatus according to the first embodiment will be described. Each of FIGS. 7 to 9 is a diagram illustrating the temperature sensors connected to the conversion unit CTL in the substrate processing apparatus 1, which is an example of the substrate processing apparatus according to the first embodiment. In each of FIGS. 7 to 9, the temperature sensors connected to the conversion unit CTL are indicated by a dotted pattern.

[0065] First, assume that the temperature sensor TC0 and the conversion unit CTL are connected as shown in Fig. 7. In the state shown in Fig. 7, the contact portion B of the switching unit SL is connected to the electrode portion E0. When the contact portion B of the switching unit SL is connected to the electrode portion E0, the switching unit SL connects the temperature sensor TC0 and the conversion unit CTL.

[0066] As indicated by arrow A1 in Fig. 8, when the stage 20 is rotated clockwise by 30 degrees, the contact portion B of the switching unit SL is connected to the electrode portion E1. That is, in the process of changing from the state of Fig. 7 to the state of Fig. 8, the switching unit SL releases the connection with the electrode portion E0 and connects with the electrode portion E1. When the contact portion B of the switching unit SL is switched to be connected to the electrode portion E1, the switching unit SL switches the temperature sensor connected to the conversion unit CTL from the temperature sensor TC0 to the temperature sensor TC1.

[0067] Furthermore, as indicated by arrow A2 in Fig. 9, when the stage 20 is rotated clockwise by an angle of 60 degrees from the state in Fig. 7, the contact portion B of the switching unit SL is connected to the electrode portion E2. That is, in the process of changing from the state in Fig. 8 to the state in Fig. 9, the switching unit SL releases the connection with the electrode portion E1 and connects with the electrode portion E2. By switching the contact portion B of the switching unit SL to be connected to the electrode portion E2, the switching unit SL switches the temperature sensor connected to the conversion unit CTL from the temperature sensor TC1 to the temperature sensor TC2.

[0068] As described above, the switching unit SL switches the temperature sensor connected to the conversion unit CTL.

[0069] Furthermore, the temperature on the stage can be monitored by using the substrate processing apparatus according to the first embodiment. In other words, the substrate processing apparatus according to the first embodiment can be used to implement a temperature monitoring method including the steps of switching between multiple temperature sensors and measuring the temperature using one of the switched temperature sensors.

[0070] According to the substrate processing apparatus of the first embodiment, it is possible to measure the temperature at a plurality of locations on the rotating stage.

[0071] According to the substrate processing apparatus of the first embodiment, switching can be performed using one contact part, so for example, if a slip ring is used to measure the temperature at one point, the brush of the slip ring can be used as the contact part.

[0072] Second Embodiment The substrate processing apparatus according to the second embodiment differs from the substrate processing apparatus according to the first embodiment in the arrangement of the temperature sensors.

[0073] The substrate processing apparatus according to the second embodiment will be described in detail with reference to the drawings. The arrangement of temperature sensors on a stage and temperature measurement zones of the substrate processing apparatus according to the second embodiment will be described. Fig. 10 is a plan view showing an outline of the arrangement of temperature sensors and measurement zones on a stage 120 of the substrate processing apparatus according to the second embodiment.

[0074] The substrate processing apparatus according to the second embodiment includes a plurality of temperature sensors, specifically a total of 13 temperature sensors, on the stage 120. More specifically, the substrate processing apparatus according to the second embodiment includes temperature sensors TC0 to TC12. The plurality of temperature sensors are distributed and arranged on the stage 120.

[0075] Similar to the substrate processing apparatus 1 according to the first embodiment, the substrate processing apparatus according to the second embodiment includes electrode units E0 to E12 corresponding to the temperature sensors TC0 to TC12, respectively. Temperature sensor TC0 is connected to electrode unit E0. Similarly, temperature sensors TC1 to TC12 are each connected to a corresponding one of electrode units E1 to E12.

[0076] 10, the substrate processing apparatus according to the second embodiment includes a temperature sensor TC0 at the center of the stage 120. The substrate processing apparatus according to the second embodiment has a measurement zone ZN100 around the temperature sensor TC0 on the stage 20. The temperature sensor TC0 measures the temperature in the measurement zone ZN100. The shape of the measurement zone ZN100 is circular in a plan view.

[0077] Furthermore, the substrate processing apparatus according to the second embodiment is provided with measurement zones ZN101 to ZN112 divided in the circumferential direction by the number of temperature sensors TC1 to TC12. The temperatures of the measurement zones ZN101 to ZN112 are measured by the temperature sensors TC1 to TC12, respectively.

[0078] Temperature sensors TC1, TC4, TC7, and TC10 are provided at positions approximately the same distance from the center of the stage 120. Similarly, temperature sensors TC2, TC5, TC8, and TC11 are provided outside temperature sensors TC1, TC4, TC7, and TC10, and at positions approximately the same distance from the center of the stage 120. Furthermore, temperature sensors TC3, TC6, TC9, and TC12 are provided outside temperature sensors TC2, TC5, TC8, and TC11, and at positions approximately the same distance from the center of the stage 120.

[0079] The temperature sensors TC1 to TC12 are provided at positions shifted in the circumferential direction.

[0080] The substrate processing apparatus according to the second embodiment can measure the temperature at multiple locations on the rotating stage, and can also measure the temperature at more dispersed locations on the stage.

[0081] Third Embodiment The substrate processing apparatus according to the third embodiment further includes a connection unit in addition to the components of the substrate processing apparatus according to the first embodiment.

[0082] The substrate processing apparatus according to the third embodiment will be described in detail with reference to the drawings. The connection between the temperature sensor and the electrode unit in the substrate processing apparatus according to the third embodiment will be described. Fig. 11 is a partial cross-sectional view showing an outline of the arrangement of the electrode unit and the ring electrode unit on the stage 20 of the substrate processing apparatus according to the third embodiment.

[0083] The substrate processing apparatus according to the third embodiment further includes a ring electrode unit EM in addition to the configuration of the substrate processing apparatus 1, which is an example of the substrate processing apparatus according to the first embodiment. Connection of temperature sensors in the substrate processing apparatus according to the third embodiment will be described. Figure 12 is a diagram illustrating connection of temperature sensors in the substrate processing apparatus according to the third embodiment.

[0084] The connection part SLM includes a ring electrode part EM and a ring contact part BM. The connection part SLM connects the conversion part CTL and the temperature sensor TC0. The connection part SLM is a so-called slip ring. Note that the temperature sensor connected to the connection part SLM is not limited to the temperature sensor TC0. The temperature sensor connected to the connection part SLM may be selected appropriately from any of the temperature sensors TC1 to TC12.

[0085] The ring electrode portion EM is provided around the entire circumference in the rotation direction of the stage 20. The ring electrode portion EM includes a positive electrode EMp and a negative electrode EMm. Each of the positive electrode EMp and the negative electrode EMm is a ring electrode provided around the entire circumference of the stage 20.

[0086] The substrate processing apparatus according to the third embodiment can measure temperatures at multiple locations on a rotating stage, even when the stage is rotating at high speed.

[0087] Since the switching unit SL has divided electrodes arranged in the circumferential direction of the stage 20, it may not be possible to measure the temperature if the stage 20 rotates at high speed. Therefore, by connecting the temperature sensor to be measured using a connection unit, the temperature can be measured stably even when the stage 20 is rotating at high speed, as there is no need to switch the temperature sensor. Note that the substrate processing apparatus according to the second embodiment may also be provided with a ring electrode unit EM.

[0088] The substrate processing apparatus according to the present embodiment disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent. [Explanation of symbols]

[0089] 1. Substrate processing equipment 10 Processing container 10S interior space 20, 120 stages A, A1, A2 arrows B Contact part Bp positive contact Bm Negative contact CTL conversion unit E0, E1, E2, E3, E4, E5, E6, E7, E8, E9, E10, E11, E12 Electrode section Ep0, Ep1, Ep2, Ep3, Ep4, Ep5, Ep6, Ep7, Ep8, Ep9, Ep10, Ep11, Ep12 Positive electrode Em0, Em1, Em2, Em3, Em4, Em5, Em6, Em7, Em8, Em9, Em10, Em11, Em12 Negative electrode Ring EM electrode part EMp positive electrode EMm negative electrode SL switching section SLM connection TC0, TC1, TC2, TC3, TC4, TC5, TC6, TC7, TC8, TC9, TC10, TC11, TC12 temperature sensors Wm0 negative wiring Wp0 positive wiring ZN0, ZN1, ZN2, ZN3, ZN4, ZN5, ZN6, ZN7, ZN8, ZN9, ZN10, ZN11, ZN12 measurement zones ZN100, ZN101, ZN102, ZN103, ZN104, ZN105, ZN106, ZN107, ZN108, ZN109, ZN110, ZN111, ZN112 Measurement Zone

Claims

1. A rotating stage and a plurality of temperature sensors distributed on the stage; a conversion unit that processes signals output from the plurality of temperature sensors; a switching unit that switches the temperature sensor to be connected to the conversion unit; Equipped with The switching unit is a plurality of electrode units provided in one-to-one correspondence with the plurality of temperature sensors, arranged side by side along the rotation direction of the stage, and including electrodes connected to any of the corresponding plurality of temperature sensors; a contact unit that is fixed to the stage, that contacts the electrode in any one of the plurality of electrode units at a time, and that includes a contactor that connects to the conversion unit; Equipped with Substrate processing equipment.

2. Each of the plurality of temperature sensors includes a positive wiring and a negative wiring, each of the plurality of electrode units includes, as the electrodes, a positive electrode connected to the positive wiring of a first temperature sensor that is one of the plurality of temperature sensors, and a negative electrode connected to the negative wiring of the first temperature sensor; The contact portion includes, as the contactors, a positive contactor that contacts the positive electrode of a first electrode portion that is one of the plurality of electrode portions, and a negative contactor that contacts the negative electrode of the first electrode portion that is connected to the negative wiring. The substrate processing apparatus according to claim 1 .

3. Further comprising a connection portion, The connection portion is a ring electrode unit provided around the entire circumference of the stage in a circumferential direction and including a ring electrode connected to any one of the plurality of temperature sensors; a ring contact portion having a contactor that contacts the ring electrode and connects to the converter portion; Equipped with The substrate processing apparatus according to claim 1 .

4. Each of the plurality of temperature sensors is a thermocouple. The substrate processing apparatus according to claim 1 .

5. A temperature monitoring method for a substrate processing apparatus having a rotating stage, comprising: a step of switching the plurality of temperature sensors by connecting a plurality of electrodes provided in one-to-one correspondence with the plurality of temperature sensors distributed on the stage, arranged in a line along the rotation direction of the stage, and connected to any of the corresponding plurality of temperature sensors, to contacts fixed to the stage and connected to any one of the plurality of electrodes at a time; measuring a temperature using one of the plurality of temperature sensors; Including, Temperature monitoring methods.

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