Element transfer device and element transfer method

Abstract

To provide an element transfer device and an element transfer method in which a damage to an element due to a laser light is suppressed even when the element is irradiated by scanning the element with the laser light.SOLUTION: A semiconductor chip transfer device 100 (element transfer device) includes a control part 60 that controls a movement locus t of a laser beam L so that a semiconductor chip 1 is peeled off from a support substrate 10 by irradiating a laser beam L while moving an irradiation position of the laser beam L irradiated from a laser beam irradiation part 70. In order to suppress an acceleration and deceleration of a movement speed of the laser beam L at a position where the movement locus t of the laser beam L and a laser beam irradiation region 2b overlap each other as viewed from a Z1 direction perpendicular to a front surface of the support substrate 10, the control part 60 is configured to perform a control of accelerating and decelerating the movement speed of the laser beam L at the position where a movement locus t of the laser beam L and the laser beam irradiation region 2b do not overlap each other as viewed from the first direction.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to an element transferring apparatus and an element transferring method, and more particularly to an element transferring apparatus and an element transferring method for transferring elements by irradiating them with laser light. [Background technology]

[0002] BACKGROUND ART Conventionally, an element transfer device and an element transfer method for transferring a semiconductor chip by irradiating it with laser light are known (for example, see Patent Document 1).

[0003] Patent Document 1 discloses a semiconductor chip transfer device including a support substrate holder that holds a support substrate holding a semiconductor chip (element), a laser beam irradiator that irradiates laser beams toward the semiconductor chip, and a transfer substrate holder that holds a transfer substrate onto which the semiconductor chip is transferred. In the transfer device of Patent Document 1, the surface of the support substrate on which the semiconductor chip is supported faces the surface of the transfer substrate onto which the semiconductor chip is transferred. In the transfer device of Patent Document 1, the support substrate has a convex adhesive layer on one surface, and supports the semiconductor chip via the adhesive layer. In Patent Document 1, the support substrate is irradiated with laser beams having a spot area larger than the area of the overlapping portion between the semiconductor chip and the adhesive layer from the side opposite the side supporting the semiconductor chip, thereby releasing the support state of the semiconductor chip and transferring the semiconductor chip, a so-called laser lift-off method being used for transfer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2020 / 166301 Summary of the Invention [Problem to be solved by the invention]

[0005] In the semiconductor chip transfer device described in Patent Document 1, the semiconductor chip is released from its support state and transferred by irradiating it with laser light having a spot area larger than the area of the overlapping portion between the semiconductor chip and the adhesive layer. Depending on the size of the semiconductor chip, the spot area of the laser light may be smaller than the area of the overlapping portion between the semiconductor chip and the laser light irradiation area, which is set inside the adhesive layer as an area that requires laser light irradiation to peel the semiconductor chip. In this case, to peel the semiconductor chip, the laser light may be scanned within the surface of the overlapping portion between the semiconductor chip and the laser light irradiation area. Furthermore, when scanning the laser light within the surface of the overlapping portion between the semiconductor chip and the laser light irradiation area, the laser light may be scanned so as to change the direction of movement of the laser light at the overlapping portion between the semiconductor chip and the laser light irradiation area in order to irradiate the entire surface of the laser light irradiation area.

[0006] When scanning while changing the moving direction of the laser beam, it is necessary to once decelerate the moving speed of the laser beam moving in a predetermined direction to zero, change the moving direction of the laser beam to the predetermined direction, and then accelerate the moving speed of the laser beam again. However, in the portion where the moving speed of the laser beam is accelerated or decelerated, the moving speed of the laser beam is slowed, and the time for which the laser beam is irradiated becomes longer. As a result, in the portion where the moving speed of the laser beam is accelerated or decelerated, the laser beam is irradiated for a time longer than the time required to release the supported state of the semiconductor chip, which may result in damage to the semiconductor chip by the laser beam. Therefore, there is a need for an element transfer device and an element transfer method that suppress damage to the element by the laser beam even when scanning and irradiating the semiconductor chip (element) with the laser beam.

[0007] The present invention has been made to solve the above-mentioned problems, and one object of the present invention is to provide an element transfer device and an element transfer method that suppress damage to elements caused by laser light even when the elements are irradiated with laser light by scanning. [Means for solving the problem]

[0008] In order to achieve the above object, an element transfer device according to a first aspect of the present invention includes a laser light irradiation unit that irradiates laser light toward a support substrate that supports an element from the side of the support substrate opposite to the surface that supports the element, and a control unit that controls the movement trajectory of the laser light so as to irradiate the laser light while moving the irradiation position of the laser light irradiated from the laser light irradiation unit, thereby peeling the element from the support substrate, wherein the area of the spot region of the laser light, as viewed from a first direction perpendicular to the surface of the support substrate, is smaller than the area of the laser light irradiation region that is set as the region that needs to be irradiated with laser light to peel the element, and the control unit is configured to control the acceleration / deceleration of the movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation region do not overlap, as viewed from the first direction, in order to suppress acceleration / deceleration of the movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation region overlap, as viewed from the first direction. Here, the "movement locus of laser light" in the present invention is a broad concept that includes not only the movement locus of the part that is irradiated with laser light when laser light is being emitted from the laser light emitting unit, but also the movement locus of the part that is not irradiated with laser light when the laser light emitting unit is not generating laser light. The same applies to the "movement speed of laser light."

[0009] In the element transfer device according to the first aspect of the present invention, as described above, the control unit is configured to control the laser beam to accelerate or decelerate at a position where the laser beam's movement trajectory and the laser beam irradiation area do not overlap as viewed from the first direction, in order to suppress acceleration or deceleration of the laser beam's movement trajectory at a position where the laser beam's movement trajectory and the laser beam irradiation area overlap as viewed from the first direction perpendicular to the surface of the support substrate. This suppresses acceleration or deceleration of the laser beam's movement trajectory at a position where the laser beam's movement trajectory and the laser beam irradiation area overlap, thereby preventing excessive laser beam irradiation time at a position where the laser beam's movement trajectory and the laser beam irradiation area overlap. As a result, damage to the element caused by the laser beam can be suppressed even when the element is irradiated with the laser beam by scanning.

[0010] In the device transfer apparatus according to the first aspect, the laser beam irradiation region is preferably set inside a support region, which is a region of the surface of the device that is supported by the support substrate, and the control unit is configured to control the acceleration / deceleration of the movement speed of the laser beam at a position that does not overlap with the laser beam irradiation region and at a position where the movement trajectory of the laser beam overlaps with the support region, while the laser beam is not being irradiated. With this configuration, it is possible to immediately start or stop the acceleration / deceleration of the movement speed of the laser beam in a portion of the support region other than the portion to be irradiated with the laser beam. As a result, it is possible to stop the acceleration / deceleration of the movement speed of the laser beam in a shorter time than when the acceleration / deceleration of the movement speed of the laser beam is started or stopped from a position other than the portion where the movement trajectory of the laser beam overlaps with the support region, thereby enabling the device to be transferred at high speed while suppressing damage to the device.

[0011] In the element transfer device according to the first aspect, the control unit is preferably configured to control the movement speed of the laser light to accelerate or decelerate at a position where the movement trajectory of the laser light and the laser light irradiation area do not overlap as viewed from the first direction, in order to maintain a constant movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area overlap as viewed from the first direction. With this configuration, the movement speed of the laser light can be maintained constant at a position where the movement trajectory of the laser light and the laser light irradiation area overlap, thereby further suppressing portions where the irradiation time of the laser light irradiated on the laser light irradiation area becomes excessive.

[0012] A second aspect of the present invention provides an element transfer method for peeling and transferring an element from a support substrate by controlling the movement trajectory of laser light, which is irradiated from the side of a support substrate supporting the element opposite to the surface supporting the element and has a spot area smaller in area than a laser light irradiation area set as an area that needs to be irradiated with laser light to peel the element, and which includes a first step of moving the laser light so as to suppress acceleration / deceleration of the movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area overlap when viewed from a first direction perpendicular to the surface of the support substrate, and a second step of accelerating / decelerating the movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area do not overlap when viewed from the first direction.

[0013] As described above, the element transfer method according to the second aspect includes a first step of moving a laser beam so as to suppress acceleration / deceleration of the movement speed of the laser beam at a position where the movement trajectory of the laser beam and the laser beam irradiation area overlap when viewed from a first direction perpendicular to the surface of the support substrate, and a second step of accelerating / decelerating the movement speed of the laser beam at a position where the movement trajectory of the laser beam and the laser beam irradiation area do not overlap when viewed from the first direction. This suppresses acceleration / deceleration of the movement speed of the laser beam at a position where the movement trajectory of the laser beam and the laser beam irradiation area overlap, thereby preventing excessive irradiation of the laser beam at a position where the movement trajectory of the laser beam and the laser beam irradiation area overlap. As a result, it is possible to provide an element transfer method that can suppress damage to an element caused by the laser beam even when the element is irradiated with the laser beam by scanning.

[0014] In the element transfer method according to the second aspect of the present invention, preferably, the second step changes the direction of movement of the laser beam while accelerating or decelerating the moving speed of the laser beam at a position where the movement trajectory of the laser beam and the laser beam irradiation area do not overlap as viewed from the first direction, in order to change the direction of movement of the laser beam at a position where the movement trajectory of the laser beam and the laser beam irradiation area overlap as viewed from the first direction. This configuration eliminates the need to change the direction of movement of the laser beam accompanied by accelerating or decelerating the moving speed of the laser beam at a position where the movement trajectory of the laser beam and the laser beam irradiation area overlap, thereby preventing the time of laser beam irradiation at the position where the movement trajectory of the laser beam and the laser beam irradiation area overlap from being excessively longer than the irradiation time required for peeling. As a result, it is possible to provide an element transfer method that can further suppress damage to elements caused by the laser beam, even when scanning while changing the movement direction of the laser beam.

[0015] In the element transfer method according to a second aspect of the present invention, preferably, the laser beam irradiation region is set inside a support region, which is a region of the surface of the element that is supported by the support substrate, and the second step accelerates or decelerates the moving speed of the laser beam at a position where the moving trajectory of the laser beam does not overlap the laser beam irradiation region when viewed from the first direction, and also at a position where the moving trajectory of the laser beam overlaps the support region. With this configuration, it is possible to immediately start or stop the acceleration or deceleration of the moving speed of the laser beam in a portion of the support region other than the portion to be irradiated with the laser beam. As a result, it is possible to stop the acceleration or deceleration of the moving speed of the laser beam in a shorter time than when the acceleration or deceleration of the moving speed of the laser beam is started or stopped from a position other than the portion where the moving trajectory of the laser beam overlaps the support region, thereby enabling the element to be transferred at high speed while suppressing damage to the element.

[0016] In the element transfer method according to the second aspect, preferably, in the second step, the moving speed of the laser beam is accelerated or decelerated at a position where the moving trajectory of the laser beam does not overlap with the laser beam irradiation area when viewed from the first direction, in order to keep the moving speed of the laser beam constant in the first step. With this configuration, the moving speed of the laser beam can be kept constant at a position where the moving trajectory of the laser beam overlaps with the laser beam irradiation area, so that an element transfer method can be provided that can further suppress portions where the irradiation time of the laser beam irradiated on the laser beam irradiation area is excessive. [Effects of the Invention]

[0017] According to the present invention, as described above, it is possible to provide an element transfer device and an element transfer method that suppress damage to elements caused by laser light even when the elements are irradiated with laser light by scanning. [Brief explanation of the drawings]

[0018] [Figure 1] 1 is a diagram showing an overall configuration of a semiconductor chip transfer device according to an embodiment; [Figure 2] 1A and 1B are diagrams illustrating a state in which a semiconductor chip is supported on a support substrate according to one embodiment. [Figure 3] 1A and 1B are diagrams for explaining the relationship between a semiconductor chip and a laser light irradiation region according to an embodiment. [Figure 4] 1 is a flowchart illustrating a process of a semiconductor chip transfer method according to an embodiment. [Figure 5] FIG. 4 is a diagram for explaining a movement locus of a laser beam according to an embodiment. [Figure 6] 5A to 5C are diagrams illustrating the irradiation timing, movement speed, and movement direction of laser light according to an embodiment. [Figure 7] FIG. 10 is a diagram for explaining a movement locus of a laser beam according to a comparative example. [Figure 8] FIG. 10 is a diagram for explaining a movement locus of a laser beam according to a first modified example. [Figure 9]FIG. 10 is a diagram for explaining a movement locus of a laser beam according to a second modified example. [Figure 10] 10A and 10B are diagrams for explaining the relationship between a semiconductor chip and a laser light irradiation region according to a third modified example, and the movement locus of the laser light. DETAILED DESCRIPTION OF THE INVENTION

[0019] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0020] [Present embodiment] The configuration of a semiconductor chip transfer apparatus 100 according to this embodiment will be described with reference to FIG.

[0021] (Semiconductor chip transfer device) As shown in FIG. 1, the semiconductor chip transfer apparatus 100 includes a support substrate holding unit 30, a transferee substrate holding unit 40, a moving mechanism 50, a control unit 60, and a laser light irradiation unit 70. In the drawing, the left-right direction of the semiconductor chip transfer apparatus 100 (one direction in a horizontal plane) is defined as the X direction. The up-down direction (vertical direction) of the semiconductor chip transfer apparatus 100 is defined as the Z direction. The direction orthogonal to the X and Z directions of the semiconductor chip transfer apparatus 100 (the other direction in a horizontal plane) is defined as the Y direction. The semiconductor chip transfer apparatus 100 is an example of an "element transfer apparatus" in the claims.

[0022] The semiconductor chip 1 is a thin element, such as a memory, with a rectangular shape (rectangle) and a side length of approximately several hundred microns to several tens of millimeters. Note that the semiconductor chip 1 is not limited to thin elements such as memories, and various elements may be used. Note that the semiconductor chip 1 is an example of an "element" in the claims.

[0023] The support substrate 10 is formed of a material that transmits the laser light L, such as a SiO2 (silicon dioxide) substrate or a sapphire substrate. In this embodiment, the support substrate 10 supports a plurality of semiconductor chips 1 via an adhesive layer 2 formed on the support substrate 10. As shown in FIG. 2, which shows the support substrate 10 viewed from the Z1 direction in FIG. 1, the plurality of semiconductor chips 1 are arranged in a matrix on the support substrate 10 at predetermined intervals via the adhesive layer 2. In this embodiment, the support substrate 10 has a circular shape. The Z1 direction is the "first direction" in the claims.

[0024] As shown in FIG. 1, the support substrate holding unit 30 holds a support substrate 10 on which a semiconductor chip 1 is supported. The support substrate holding unit 30 holds the support substrate 10 supporting the semiconductor chip 1 with the surface supporting the semiconductor chip 1 facing downward (Z2 direction). The support substrate holding unit 30 also has an opening 31. The support substrate 10 held by the support substrate holding unit 30 is irradiated with laser light L emitted from a laser light irradiation unit 70 through the opening 31. The support substrate holding unit 30 is also configured to be movable relative to the transferred substrate holding unit 40 by a movement mechanism 50 in at least the X and Y directions.

[0025] 3, an adhesive layer 2, indicated by a thin line, is formed between the support substrate 10 and the semiconductor chip 1 over the entire surface of the support substrate 10 on the Z2 direction side, indicated by a thick line. The adhesive layer 2 is made of a material that decomposes to generate gas components when irradiated with laser light L from the laser light irradiation unit 70. For example, polyimide or silicon is used as the adhesive layer 2.

[0026] The transfer substrate 20 is a substrate for manufacturing a semiconductor product by transferring a large number of semiconductor chips 1 supported on a support substrate 10 to the transfer substrate 20. In this embodiment, the transfer substrate 20 has a rectangular shape.

[0027] The transfer substrate holding part 40 holds, from below (Z2 direction side), the transfer substrate 20 onto which the semiconductor chip 1 supported on the support substrate 10 is to be transferred. The transfer substrate holding part 40 is configured to be movable relative to the support substrate holding part 30 by a movement mechanism 50 in at least the X direction and the Y direction.

[0028] The control unit 60 includes, for example, a processor such as a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and a GPU (Graphics Processing Unit), and performs various controls by executing a program (software). The control unit 60 arbitrarily selects a semiconductor chip 1 in the transfer area and controls the laser light irradiation unit 70 to irradiate the semiconductor chip 1 in the transfer area with laser light L, thereby controlling the transfer of the semiconductor chip 1 in the transfer area onto the transfer substrate 20. The control unit 60 is also configured to arbitrarily operate each component included in the laser light irradiation unit 70 to control the movement trajectory t (see FIG. 5) of the laser light L. Details of the control performed by the control unit 60 will be described later.

[0029] The laser light irradiation unit 70 is configured to irradiate the support substrate 10 with laser light L. The laser light irradiation unit 70 includes a laser light source 71, a galvanometer mirror 72, and an fθ lens 73. The laser light source 71 is a light source that emits laser light L. The laser light source 71 is controlled by the control unit 60 to intermittently emit the laser light L so that the irradiation time intervals are uniform. The galvanometer mirror 72 is rotatable about two intersecting axes as rotation axes, and reflects the laser light L at any angle. The fθ lens 73 focuses the laser light L from the galvanometer mirror 72 onto a transfer region of the support substrate 10. As a result, the size of the transfer region arranged in the support substrate 10 falls within the irradiation range of the reflected laser light L within the rotation range of the galvanometer mirror 72. The laser light irradiation unit 70 also includes a galvanometer motor (not shown), and the control unit 60 is configured to change the output of the galvanometer motor, thereby changing the movement speed of the laser light L in the X direction and the Y direction.

[0030] Furthermore, the laser light irradiation unit 70 irradiates the support substrate 10 held by the support substrate holding unit 30 with laser light L from the surface opposite to the surface supporting the semiconductor chip 1, via a galvanometer mirror 72 and an fθ lens 73. The laser light L is irradiated by the galvanometer mirror 72 and the fθ lens 73 onto the adhesive layer 2 corresponding to the selected semiconductor chip 1 in the transfer area. The angle and tilt speed of the galvanometer mirror 72 are controlled by the control unit 60, thereby controlling the movement trajectory t (see FIG. 5) of the laser light L. The laser light L is irradiated toward the laser light irradiation area 2b (see FIG. 5) set inside the adhesive layer 2 through the support substrate 10, whereby the semiconductor chip 1 is peeled off from the support substrate 10 and transferred from the support substrate 10 to the transfer substrate 20. That is, transfer is performed by the laser lift-off method.

[0031] (Method for transferring semiconductor chips) Next, a transfer method for suppressing damage to the semiconductor chip 1 in this embodiment will be described with reference to Figures 2 to 6. The following description will be given in accordance with the process flow of the transfer method shown in Figure 4, which is executed by the control unit 60.

[0032] In this embodiment, as shown in FIG. 3, the semiconductor chip 1 is supported on the support substrate 10 via an adhesive layer 2. To peel the semiconductor chip 1 from the support substrate 10, first, as a selection process in step S1 in the flowchart of FIG. 4, the control unit 60 selects a semiconductor chip 1 to be transferred from among the multiple semiconductor chips 1 supported on the support substrate 10 as shown in FIG. 2. The semiconductor chips 1 to be transferred are preprogrammed in the control unit 60, and the control unit 60 selects the semiconductor chips 1 to be transferred one by one, in order, starting from an arbitrary position, from the multiple semiconductor chips 1 to be transferred. In this embodiment, the semiconductor chip 1 indicated by the thick line is selected. The control unit 60 also controls the moving mechanism 50 to position the support substrate 10 and the transfer substrate 20 opposite each other so that the selected semiconductor chip 1 is transferred to the transfer substrate 20. Then, the process proceeds to step S2.

[0033] Next, in step S2, a movement trajectory setting process, the control unit 60 sets a movement trajectory t of the laser light L relative to the semiconductor chip 1 when transferring the selected semiconductor chip 1. In this embodiment, as shown in FIG. 3, an adhesive region 2a where the adhesive layer 2 and one semiconductor chip 1 overlap has an area SA. Furthermore, inside the adhesive region 2a, a laser light irradiation region 2b having an area SB is set as an area that needs to be irradiated with the laser light L to peel the semiconductor chip 1. The control unit 60 acquires, for the selected semiconductor chip 1, a pattern of the movement trajectory t of the laser light L that is necessary to peel the semiconductor chip 1 from the support substrate 10, as shown in FIG. 5. In this embodiment, the area SC (see FIG. 6) of the spot region Ls of the laser light L is smaller than the area SB of the laser light irradiation region 2b, and therefore a movement trajectory t that scans the laser light L on the semiconductor chip 1 is acquired. The movement trajectory t of the laser light L includes not only the movement trajectory t of the irradiation position irradiated when the laser light irradiating unit 70 is generating the laser light L, but also the movement trajectory t when the laser light irradiating unit 70 is not generating the laser light L. For convenience, however, the movement trajectory t will be described as the movement trajectory t of the laser light L. Furthermore, of the lines showing the movement trajectory t shown in FIG. 5, the dotted lines indicate the parts that are not irradiated with the laser light L, and the thick solid lines indicate the parts that are irradiated with the laser light L. Then, the process proceeds to step S3. The adhesive region 2a is an example of a "support region" in the claims.

[0034] Next, as a first adjustment step in step S3, the control unit 60 accelerates the moving speed of the laser beam L. FIG. 6 is an enlarged view of one semiconductor chip 1 selected from the plurality of semiconductor chips 1 shown in FIG. 5. The control unit 60 controls the operation of various components of the laser beam irradiation unit 70 to accelerate the moving speed of the laser beam L in the Y1 direction at a predetermined position P1 on the laser beam irradiation area 2b for the semiconductor chip 1 selected in step S1. Although the laser beam L is not irradiated at step S3, for convenience, the speed of the portion moving along the movement trajectory t when the laser beam irradiation unit 70 is not generating the laser beam L will also be described as the moving speed of the laser beam L. Note that the location where the laser beam L moves in step S3 is a position where the laser beam irradiation area 2b and the movement trajectory t do not overlap when viewed from the Z direction, as shown by the dotted line in FIG. 6. This first adjustment step is an example of a "second step" in the claims. Then, the process proceeds to step S4.

[0035] Next, in the first irradiation process of step S4, when the position of the laser beam L reaches position P1, the laser beam irradiation unit 70 generates the laser beam L and irradiates the laser beam L along a movement trajectory t that overlaps with the laser beam irradiation region 2b. Note that the position of the laser beam L refers to the center of gravity of the spot portion irradiated with the laser beam L. The laser beam L is irradiated while moving at a constant speed in the Y1 direction from position P1 to position P2. In this embodiment, for example, the movement speed of the laser beam L is 5 (m / sec). The spot region Ls of the laser beam L is a rectangular region with a side width w and an area SC. Note that, as shown in FIG. 6, the area SC of the spot region Ls is smaller than the area SB of the laser beam irradiation region 2b. Here, the width of the spot region Ls of the laser beam L irradiated on the laser beam irradiation region 2b is w, and therefore the laser beam L is irradiated onto an area of width w along the movement trajectory t. This first irradiation step is an example of the "first step" in the claims. After that, the process proceeds to step S5.

[0036] Next, in the second adjustment step of step S5, when the laser beam L reaches position P2, the control unit 60 commands the laser beam irradiator 70 to stop emitting the laser beam L. This stops laser irradiation along the movement trajectory t. The control unit 60 also controls the operation of various components of the laser beam irradiator 70 to slow down the movement speed of the laser beam L and change the movement direction of the laser beam L from the Y1 direction to the Y2 direction at a position where the laser beam irradiation area 2b and the movement trajectory t of the laser beam L do not overlap. Note that the deceleration of the movement speed of the laser beam L required to change the movement direction of the laser beam L starts and ends at a position where the movement trajectory t of the laser beam L and the laser beam irradiation area 2b do not overlap, as viewed from the Z1 direction. Here, although the laser beam L is not irradiated at this point in step S5, for convenience, the direction of the portion of the laser beam L that moves along the movement trajectory t when the laser beam irradiator 70 is not generating the laser beam L will also be described as the movement direction of the laser beam L. Furthermore, after the movement direction of the laser beam L becomes the Y2 direction, the control unit 60 accelerates the speed of the laser beam L moving in the Y2 direction at a predetermined position P3 in the laser beam irradiation area 2b so that the speed becomes a desired speed. Note that the acceleration of the movement speed of the laser beam L required to change the movement direction of the laser beam L starts and ends at a position where the movement trajectory t of the laser beam L does not overlap with the laser beam irradiation area 2b when viewed from the Z1 direction. Note that this second adjustment step is an example of a "second step" in the claims. Thereafter, the process proceeds to step S6.

[0037] Next, in the second irradiation step of step S6, when the position of the laser light L reaches position P3, the laser light irradiation unit 70 generates the laser light L in response to a command from the control unit 60 and irradiates the laser light L along a movement trajectory t that overlaps with the laser light irradiation area 2b. The laser light L is irradiated while moving at a constant speed in the Y2 direction from position P3 to position P4. This second irradiation step is an example of the "first step" in the claims. Then, the process proceeds to step S7.

[0038] Next, in step S7, the control unit 60 determines whether irradiation of the laser light L onto the laser light irradiation area 2b has been completed and transfer of the semiconductor chip 1 has been completed. If transfer of the semiconductor chip 1 has not been completed, the processes of steps S5 and S6 are repeated to irradiate the laser light L onto the laser light irradiation area 2b until the semiconductor chip 1 is transferred. Through the above process, transfer of the semiconductor chip 1 is performed and transfer of the selected semiconductor chip 1 is completed. Then, the process proceeds to step S8.

[0039] Next, in step S8, the control unit 60 determines whether or not the transfer of the semiconductor chips 1 to the transfer substrate 20 has been completed in all of the transfer regions. If the control unit 60 determines that the transfer of the semiconductor chips 1 has been completed in all of the transfer regions, the process ends. If the control unit 60 determines that the transfer of the semiconductor chips 1 to the transfer substrate 20 has not been completed in all of the multiple transfer regions, the process returns to step S1, and the transfer process is performed again on another semiconductor chip 1. By repeating this process, the transfer of all of the semiconductor chips 1 supported on the support substrate 10 is completed.

[0040] Here, a comparative example (corresponding to a conventional example) of FIG. 7 will be described, which differs from the above-described embodiment of the present invention in that a semiconductor chip 101 supported on a support substrate 110 via an adhesive layer 102 is transferred. As shown in FIG. 7 , in the comparative example, the movement trajectory ta of the laser light L is set only in the area where the semiconductor chip 101 overlaps with the laser light irradiation area 102b provided inside the adhesive area 102a. In this case, while the laser light L is being irradiated, the movement trajectory ta of the laser light L is configured to move in the Y direction, then change direction to the X direction at the Y-direction end of the semiconductor chip 1, and then move in the Y direction again. At this time, the movement speed of the laser light L in the Y direction must be temporarily decelerated, changed direction, and then accelerated again until it reaches the movement speed in the Y direction. Therefore, in area A at the Y-direction end where the movement direction of the laser light L is changed, the movement speed of the laser light L is slowed, and the irradiation time of the laser light L is lengthened. Therefore, in this comparative example, when viewed from the Z1 direction, greater damage is caused to the semiconductor chip 1 in the portion where this region A overlaps with the semiconductor chip 1. In contrast to this comparative example, the present embodiment can provide the following effects.

[0041] (Effects of this embodiment) The effects of this embodiment will be described below.

[0042] The semiconductor chip transfer device 100 of this embodiment includes a laser light irradiation unit 70 that irradiates a laser beam L toward a support substrate 10, the support substrate 10 supporting at least one semiconductor chip 1 on an adhesive layer 2, from the side opposite to the surface supporting the semiconductor chip 1, and a control unit 60 that controls a movement locus t of the laser beam L by irradiating the laser beam L while moving the irradiation position of the laser beam L irradiated from the laser light irradiation unit 70, so as to peel the semiconductor chip 1 from the support substrate 10. The area SC of the spot region Ls of the laser beam L is When viewed from the Z1 direction perpendicular to the surface of the semiconductor chip 10, the area SB is smaller than the area SB of the laser light irradiation region 2b set as a region that needs to be irradiated with the laser light L to peel off the semiconductor chip 1, and the control unit 60 is configured to control the acceleration / deceleration of the movement speed of the laser light L at a position where the movement locus t of the laser light L and the laser light irradiation region 2b do not overlap when viewed from the Z1 direction in order to suppress acceleration / deceleration of the movement speed of the laser light L at a position where the movement locus t of the laser light L and the laser light irradiation region 2b overlap when viewed from the Z1 direction. Furthermore, the semiconductor chip transfer method of this embodiment includes a second adjustment step of moving the laser light L to suppress acceleration / deceleration of the laser light L at a position where the movement locus t of the laser light L and the laser light irradiation region 2b overlap when viewed from the Z1 direction, and a second irradiation step of accelerating / decelerating the movement speed of the laser light L at a position where the movement locus t of the laser light L and the laser light irradiation region 2b do not overlap when viewed from the Z1 direction. As a result, compared to the comparative example in which the acceleration and deceleration of the laser beam L is performed within the plane of the laser beam irradiation area 102b, the acceleration and deceleration of the movement speed of the laser beam L is suppressed at the position where the movement locus t of the laser beam L and the laser beam irradiation area 2b overlap. Therefore, it is possible to prevent the laser beam L from being irradiated for an excessive period of time at the position where the movement locus t of the laser beam L and the laser beam irradiation area 2b overlap. As a result, even when the semiconductor chip 1 is scanned and irradiated with the laser beam L, damage to the semiconductor chip 1 caused by the laser beam L can be suppressed.

[0043] In the semiconductor chip transfer device 100 of this embodiment, the control unit 60 is configured to control the change in the movement direction of the laser light L while accelerating or decelerating the movement speed of the laser light L at a position where the movement trajectory t of the laser light L and the laser light irradiation area 2b overlap as viewed from the Z1 direction, in order to change the movement direction of the laser light L at a position where the movement trajectory t of the laser light L and the laser light irradiation area 2b do not overlap as viewed from the Z1 direction. This eliminates the need to change the movement direction, which requires accelerating or decelerating the movement speed of the laser light L, at a position where the movement trajectory t of the laser light L and the laser light irradiation area 2b overlap. This prevents the irradiation time of the laser light L at the position where the movement trajectory t of the laser light L and the laser light irradiation area 2b overlap from being excessively longer than the irradiation time required for peeling. As a result, even when scanning while changing the movement direction of the laser light L, damage to the semiconductor chip 1 caused by the laser light L can be further suppressed.

[0044] Furthermore, in the semiconductor chip transfer device 100 of this embodiment, the control unit 60 is configured to control the acceleration and deceleration of the movement speed of the laser light L in a state where the laser light L is not being irradiated at a position where the movement trajectory t of the laser light L does not overlap with the laser light irradiation region 2b when viewed from the Z1 direction, and also at a position where the movement trajectory t of the laser light L overlaps with the adhesive region 2a. With this configuration, it is possible to immediately start or stop the acceleration and deceleration of the movement speed of the laser light L in a portion of the adhesive region 2a other than the portion to be irradiated with the laser light L. As a result, it is possible to stop the acceleration and deceleration of the movement speed of the laser light L in a shorter time than when the acceleration and deceleration of the movement speed of the laser light L is started or stopped from a position other than the portion where the movement trajectory t of the laser light L overlaps with the adhesive region 2a. This makes it possible to transfer the semiconductor chip 1 at high speed while suppressing damage to the semiconductor chip 1.

[0045] Furthermore, in the semiconductor chip transfer apparatus 100 of this embodiment, the control unit 60 is configured to control the movement speed of the laser light L to be accelerated or decelerated at positions where the movement locus t of the laser light L and the laser light irradiation area 2b do not overlap as viewed from the Z1 direction, in order to keep the movement speed of the laser light L constant at the position where the movement locus t of the laser light L and the laser light irradiation area 2b overlap as viewed from the Z1 direction. This makes it possible to keep the movement speed of the laser light L constant at the position where the movement locus t of the laser light L and the laser light irradiation area 2b overlap, thereby suppressing portions where the irradiation time of the laser light L irradiated onto the laser light irradiation area 2b becomes excessive.

[0046] [Variations] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The scope of the present invention is defined by the claims rather than the above description of the embodiments, and further includes all modifications (variations) within the meaning and scope of the claims.

[0047] For example, in the present embodiment, an example has been shown in which the support substrate 10 has a circular shape and the transfer substrate 20 has a rectangular shape, but the present invention is not limited to this. In the present invention, for example, the shapes of both the support substrate 10 and the transfer substrate 20 may be circular or polygonal. In addition, the transfer substrate 20 may have an adhesive layer (not shown) formed thereon for adhering the transferred semiconductor chip 1. In addition, the transfer substrate 20 may have wiring formed thereon that can be electrically connected to the transferred semiconductor chip 1.

[0048] In addition, in the present embodiment, an example has been shown in which the laser light irradiation unit 70 includes the laser light source 71, the galvanometer mirror 72, and the fθ lens 73, but the present invention is not limited to this. In the present invention, for example, a polygon mirror may be used instead of the galvanometer mirror 72, and a mask may be used instead of the galvanometer mirror 72 and the fθ lens 73.

[0049] In addition, in the present embodiment, an example has been shown in which the shape of the spot area Ls of the laser light L is rectangular, but the present invention is not limited to this. In the present invention, the shape of the spot area Ls of the laser light L may be any shape, for example, a circular shape.

[0050] Furthermore, in the present embodiment, an example has been shown in which the control unit 60 controls the movement mechanism 50 to move the transfer substrate holding unit 40, but the present invention is not limited to this. In the present invention, for example, the control unit 60 may be configured to control the movement mechanism 50 to move both the transfer substrate holding unit 40 and the support substrate holding unit 30, or may be configured to move only the support substrate holding unit 30.

[0051] In addition, in the present embodiment, the configuration has been shown in which the movement locus t is set so that the laser beam L moves in the X1 direction while meandering in the Y direction along the Y-direction side of the laser beam irradiation area 2b (semiconductor chip 1), but the present invention is not limited to this. In the present invention, for example, as shown in Fig. 8 as a first modified example, the movement locus t may be set so that the laser beam L moves in a meandering manner from one corner of the laser beam irradiation area 2b toward the diagonal corner.

[0052] In addition, in this embodiment, the configuration has been shown in which the movement locus t is set so that the laser beam L moves in the X1 direction while meandering in the Y direction along the Y-direction side of the laser beam irradiation area 2b (semiconductor chip 1), but the present invention is not limited to this. In the present invention, for example, as shown in Fig. 9 as a second modified example, the movement locus t may be set so that the laser beam L moves while rotating in a spiral shape from the outer edge of the laser beam irradiation area 2b (semiconductor chip 1) toward the center of the laser beam irradiation area 2b (semiconductor chip 1).

[0053] In addition, in this embodiment, an example has been shown in which the adhesive layer 2 is formed on the entire surface of the support substrate 10 and the area SA of the adhesive region 2a is equal to the area of the semiconductor chip 1, but the present invention is not limited to this. In the present invention, as shown as a third modified example in Figure 10, the adhesive layer 2 may be formed partially on the support substrate 10 and multiple adhesive layers 2 may be provided for the semiconductor chip 1. In this case, the area SA of the adhesive region 2a will be smaller than the area of the semiconductor chip 1.

[0054] In addition, in this embodiment, an example in which the laser light irradiation area 2b is set inside the adhesive area 2a has been shown, but the present invention is not limited to this. In the present invention, the laser light irradiation area 2b and the adhesive area 2a may be set to have the same shape and position.

[0055] In addition, in the present embodiment, an example has been shown in which the control unit 60 is configured to change the movement direction of the laser light L at a position where the movement trajectory t of the laser light L and the adhesive region 2a do not overlap, thereby controlling the movement speed of the laser light L to be accelerated or decelerated at the position where the movement trajectory t of the laser light L and the adhesive region 2a do not overlap, as viewed from the Z direction, but the present invention is not limited to this. In the present invention, the control unit 60 may be configured to change the movement direction of the laser light L at a position where the movement trajectory t of the laser light L and the adhesive region 2a overlap, as viewed from the Z direction, and at a position where the movement trajectory t of the laser light L and the laser light irradiation region 2b do not overlap. In this case, it is preferable that the laser light irradiation unit 70 does not generate the laser light L while changing the movement direction of the laser light L.

[0056] In addition, in the present embodiment, the control unit 60 accelerates or decelerates the moving speed of the laser light L at a position where the moving trajectory t of the laser light L and the laser light irradiation area 2b do not overlap as viewed from the Z1 direction in order to keep the moving speed of the laser light L constant at a position where the moving trajectory t of the laser light L and the laser light irradiation area 2b overlap as viewed from the Z1 direction, but the present invention is not limited to this. In the present invention, the moving speed of the laser light L at the position where the moving trajectory t of the laser light L and the laser light irradiation area 2b overlap may be approximately constant, and the moving speed of the laser light L may fluctuate (variegate) somewhat as long as the moving speed is such that the irradiation time does not cause damage to the semiconductor chip 1. The allowable range Δv / v (%) of the variation Δv (m / s) in the moving speed of the laser light L is determined based on the moving speed v (m / s) of the laser light L, the irradiation interval p (mm), the variation Δp (mm) in the irradiation interval, the laser frequency f (kHz), and the expected variation Δf (kHz) in the laser frequency, as shown in the following formula.

number

[0057] Furthermore, in this embodiment, an example in which the semiconductor chip 1 is transferred has been shown, but the present invention is not limited to this. The object to be transferred may be various elements other than the semiconductor chip 1.

[0058] In addition, in the present embodiment, an example has been shown in which the semiconductor chip 1 is supported on the support substrate 10 by the adhesive layer 2, but the present invention is not limited to this. In the present invention, the semiconductor chip 1 only needs to be supported on the support substrate 10 so as to be peeled off by the energy of the irradiation of the laser light L, and the supporting method is not limited to the method using the adhesive layer 2. [Explanation of symbols]

[0059] 1. Semiconductor chip (element) 2 Adhesive layer (adhesive material) 2a Adhesive area (support area) 2b Laser light irradiation area 10 Support substrate 20 Transferred substrate 30 Support board holding part 40 Transferred substrate holder 50 Moving mechanism 60 Control Unit 70 Laser light irradiation unit 100 Semiconductor chip transfer device (element transfer device) L laser light Ls Laser light spot area t Movement trajectory SA Adhesive area SB laser light irradiation area SC Laser light spot area

Claims

1. a laser light irradiation unit that irradiates a laser light toward a support substrate that supports at least one element from a side of the support substrate opposite to a surface that supports the element; a control unit that controls a movement locus of the laser light so as to irradiate the laser light while moving an irradiation position of the laser light irradiated from the laser light irradiating unit and peel the element from the support substrate, an area of the spot region of the laser light, when viewed from a first direction perpendicular to the surface of the support substrate, being smaller than an area of a laser light irradiation region set as a region that needs to be irradiated with the laser light in order to peel off the element; The control unit is configured to control the acceleration / deceleration of the movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area do not overlap when viewed from the first direction, in order to suppress acceleration / deceleration of the movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area overlap when viewed from the first direction.

2. 2. The element transfer device of claim 1, wherein the control unit is configured to control the change in the movement direction of the laser light while accelerating or decelerating the movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area do not overlap when viewed from the first direction, in order to change the movement direction of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area overlap when viewed from the first direction.

3. the laser light irradiation region is set inside a support region, which is a region of a surface of the element that is supported by the support substrate; 2. The element transfer device of claim 1, wherein the control unit is configured to control the acceleration / deceleration of the movement speed of the laser light at a position where the movement trajectory of the laser light does not overlap with the laser light irradiation area when viewed from the first direction, and also at a position where the movement trajectory of the laser light overlaps with the support surface.

4. 2. The element transfer device of claim 1, wherein the control unit is configured to control the movement speed of the laser light to accelerate or decelerate at a position where the movement trajectory of the laser light and the laser light irradiation area do not overlap when viewed from the first direction, in order to maintain a constant movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area overlap when viewed from the first direction.

5. 1. An element transfer method for peeling and transferring an element from a support substrate by controlling a movement locus of laser light that is irradiated from a surface opposite to a surface that supports the element, the laser light having a spot area smaller than an area of a laser light irradiation area that is set as an area that needs to be irradiated with laser light in order to peel the element, the method comprising: a first step of moving the laser beam so as to suppress acceleration or deceleration of a moving speed of the laser beam at a position where the moving trajectory of the laser beam and the laser beam irradiation region overlap when viewed from a first direction perpendicular to a surface of the support substrate; a second step of accelerating or decelerating the moving speed of the laser light at a position where the moving trajectory of the laser light and the laser light irradiation area do not overlap when viewed from the first direction.

6. 6. The element transfer method according to claim 5, wherein the second step changes the movement direction of the laser light while accelerating or decelerating the movement speed of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area do not overlap when viewed from the first direction, in order to change the movement direction of the laser light at a position where the movement trajectory of the laser light and the laser light irradiation area overlap when viewed from the first direction.

7. the laser light irradiation region is set inside a support region, which is a region of a surface of the element that is supported by the support substrate; 6. The element transfer method according to claim 5, wherein the second step accelerates or decelerates the movement speed of the laser light at a position where the movement trajectory of the laser light does not overlap with the laser light irradiation area when viewed from the first direction, and also at a position where the movement trajectory of the laser light overlaps with the support area.

8. 6. The element transfer method according to claim 5, wherein the second step accelerates or decelerates the moving speed of the laser light at a position where the moving trajectory of the laser light does not overlap with the laser light irradiation area when viewed from the first direction, in order to keep the moving speed of the laser light in the first step constant.

Images