Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and program

Abstract

To provide a technique capable of reducing an energy excessively consumed by a substrate processing apparatus.SOLUTION: A substrate processing apparatus includes: (a) a first processing chamber in which a process of causing a temperature of a substrate to be a first temperature is performed; (b) a second processing chamber in which a process of causing a temperature of the substrate to be a second temperature higher than the first temperature is performed; (c) a transfer chamber configured to communicate with the first processing chamber and the second processing chamber and including a transfer mechanism that transfers the substrate; (d) a temperature control mechanism that controls a temperature of a predetermined target in the transfer chamber; and (e) a control part configured to be capable of controlling the transfer mechanism and the temperature control mechanism such that control of contents of the transfer of the substrate between the first processing chamber and the second processing chamber and control of contents of the temperature control according to the content of the transfer are performed.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a program. [Background technology]

[0002] As one step in a substrate processing process (a process for manufacturing a semiconductor device), a substrate may be processed using a substrate processing apparatus having a plurality of processing chambers and a transfer chamber communicating with the processing chambers (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-53298 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can reduce excessive energy consumption by a substrate processing apparatus. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a first processing chamber in which processing of the substrate to a first temperature is performed; a second processing chamber in which processing of the substrate to a second temperature higher than the first temperature is performed; a transfer chamber configured to be able to communicate with the first processing chamber and the second processing chamber and including a transfer mechanism that transfers the substrate; a temperature control mechanism for controlling the temperature of a predetermined object; Controlling the transfer of the substrate between the first processing chamber and the second processing chamber in the transfer chamber; Controlling the temperature control in accordance with the transporting process; a control unit configured to be able to control the transport mechanism and the temperature control mechanism so that The present invention provides a technique having: [Effects of the Invention]

[0006] According to the present disclosure, it is possible to reduce excessive energy consumption by a substrate processing apparatus. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view showing an example of the configuration of a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a vertical cross-sectional view taken along line α-α' of the substrate processing apparatus shown in FIG. [Figure 3] FIG. 3 is a schematic diagram of the chamber according to the embodiment. [Figure 4] FIG. 4 is a schematic diagram of a gas supply unit according to the embodiment. [Figure 5] FIG. 5 is a schematic configuration diagram of the controller shown in FIG. [Figure 6] FIG. 6 is a flowchart of a substrate processing process in the substrate processing apparatus shown in FIG. [Figure 7] FIG. 7 is a diagram illustrating the output of the temperature control. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, one embodiment of the present disclosure will be described mainly with reference to Figures 1 to 7. Note that the drawings used in the following description are all schematic, and the dimensional relationships between elements, the ratios of elements, etc. shown in the drawings do not necessarily match those in reality. Furthermore, the dimensional relationships between elements, the ratios of elements, etc. do not necessarily match between multiple drawings.

[0009] (1) Configuration of the substrate processing equipment A schematic configuration of a substrate processing apparatus according to an embodiment will be described with reference to FIGS. 1 and 2. FIG.

[0010] The substrate processing apparatus 10 processes wafers 200 and is mainly composed of an IO stage 110, an atmospheric transfer chamber 120, a load lock chamber 130, a transfer chamber (transfer module) 140, and a process module (PM) 100. Each component will be described in detail below. In the following description, the X1 direction in FIG. 1 may be referred to as the right, the X2 direction as the left, the Y1 direction as the front, and the X1 direction as the rear.

[0011] (Atmospheric transfer chamber / IO stage) As shown in Fig. 1, an IO stage (load port) 110 is installed in front of the substrate processing apparatus 10. A plurality of pods 111 are mounted on the IO stage 110. The pods 111 are used as carriers for transporting wafers 200 such as silicon (Si) substrates. A plurality of unprocessed wafers 200 and a plurality of processed wafers 200 are stored in the pod 111 in a horizontal position.

[0012] The pod 111 is provided with a cap 112, which is opened and closed by a pod opener 121. The pod opener 121 opens and closes the cap 112 of the pod 111 placed on the IO stage 110, and opens and closes the substrate loading / unloading opening of the pod 111. The pod 111 is supplied to and unloaded from the IO stage 110 by an in-process transport device (RGV) not shown.

[0013] The IO stage 110 is adjacent to the atmospheric transfer chamber 120. The atmospheric transfer chamber 120 is connected to a load lock chamber 130, which will be described later, on a side different from the IO stage 110 side.

[0014] An atmospheric transfer robot 122 is installed in the atmospheric transfer chamber 120 as a first transfer robot that transfers the wafer 200. Also, on the left side of the atmospheric transfer chamber 120, a device (hereinafter referred to as a pre-aligner) 126 that aligns a notch or orientation flat formed on the wafer 200 is installed.

[0015] A loading / unloading port 128 and a pod opener 121 are installed on the front side of a housing 127 of the atmospheric transfer chamber 120. Wafers 200 are transferred between the pod 111 and the atmospheric transfer chamber 120 via the loading / unloading port 128.

[0016] A loading / unloading port 129 is provided at the rear side of the housing 127 of the atmospheric transfer chamber 120 for loading / unloading the wafer 200 into / from the load lock chamber 130. The loading / unloading port 129 is opened / closed by a gate valve (GV) 133. The wafer 200 is transferred between the atmospheric transfer chamber 120 and the load lock chamber 130 via the loading / unloading port 129.

[0017] (load lock chamber) The load lock chamber 130 is adjacent to the atmospheric transfer chamber 120. Of the surfaces of a housing 131 that constitutes the load lock chamber 130, a transfer chamber 140 is arranged on the surface opposite to the atmospheric transfer chamber 120, as will be described later.

[0018] A loading / unloading port 134 is provided on the side of the housing 131 adjacent to the transfer chamber 140. The loading / unloading port 134 is opened and closed by a GV 135. The wafer 200 is transferred between the atmospheric transfer chamber 120 and the transfer chamber 140 via the loading / unloading port 134.

[0019] Furthermore, within the load lock chamber 130, supports 131a and 131b on which the wafer 200 is placed are installed.

[0020] Also provided are an inert gas supply unit that supplies an inert gas as a cooling gas into the load lock chamber 130, and exhaust units 601 and 602 that exhaust the atmosphere inside the load lock chamber 130. The inert gas supply unit has gas supply pipes 501a and 502a, valves 501b and 502b, and MFCs 501c and 502c that are flow rate controllers (flow rate control units), and is configured to be able to adjust the flow rate of the cooling gas supplied into the load lock chamber 130. The load lock chamber 130 is also a processing chamber that performs a process of controlling (cooling) the temperature of the wafers 200 to a predetermined temperature.

[0021] (Transportation room) The substrate processing apparatus 10 includes a transfer chamber 140, which serves as a transfer space for transferring wafers 200. The interior of the transfer chamber 140 may be maintained under reduced pressure or vacuum. A housing 141 constituting the transfer chamber 140 is pentagonal in plan view, and the load lock chamber 130 and PMs 100a to 100d for processing wafers 200 are connected to each side of the pentagon. As shown in FIG. 2, a transfer robot 170 serving as a transfer mechanism for transferring (transferring) the wafers 200 is installed at approximately the center of the transfer chamber 140, with a flange 143 as its base. Note that, although the transfer chamber 140 is shown as being pentagonal here, it may be polygonal, such as rectangular or hexagonal. The transfer chamber 140 is provided with a heat transfer gas supply unit 150, a gas exhaust unit 160, and a heat medium supply unit, as examples of a temperature control mechanism 310 for controlling the temperature of a predetermined object within the transfer chamber 140.

[0022] 2, the transfer robot 170 installed in the transfer chamber 140 is configured to be able to move up and down while maintaining the airtightness of the TM 140 using an elevator 145 and a flange 143. The elevator 145 is configured to be able to independently move up and down two arms 180 and 190 of the transfer robot 170. Furthermore, each of the two arms 180 and 190 is provided with tweezers 181, 182, 191, and 192, and is configured so that two wafers 200 can be simultaneously transferred with one arm.

[0023] The housing 141 is provided with a heat transfer gas supply hole 146 for supplying a heat transfer gas into the housing 141. A heat transfer gas supply pipe 151 is provided in the heat transfer gas supply hole 146. A heat transfer gas source 152, a mass flow controller (MFC) 153, and a valve 154 are provided in the heat transfer gas supply pipe 151 in this order from upstream to downstream, and the amount of heat transfer gas supplied into the housing 141 is controlled.

[0024] A heat transfer gas supply unit 150 in the transfer chamber 140 mainly includes the heat transfer gas supply pipe 151, the MFC 153, and the valve 154. The heat transfer gas supply unit 150 may also include the heat transfer gas source 152 and the heat transfer gas supply hole 146.

[0025] The housing 141 is provided with an exhaust hole 147 for exhausting the atmosphere of the housing 141. An exhaust pipe 161 is provided in the exhaust hole 147. In the exhaust pipe 161, a pressure sensor 164 serving as a pressure detection unit that detects the pressure inside the transfer chamber 140, an APC (Auto Pressure Controller) 162 that is a pressure controller, and a vacuum pump 163 are provided in this order from upstream.

[0026] The gas exhaust unit 160 in the transfer chamber 140 is mainly composed of the exhaust pipe 161 and the APC 162. The exhaust unit 160 may also include a pressure sensor 164, a vacuum pump 163, and an exhaust hole 147.

[0027] The pressure inside the transfer chamber 140 is controlled by at least one of the heat transfer gas supply unit 150 and the gas exhaust unit 160. Note that at least one of the heat transfer gas supply unit 150 and the gas exhaust unit 160 may control the pressure inside the transfer chamber 140 based on measurement data from a pressure sensor 164.

[0028] 1, of the five side walls of the housing 141, PMs 100a, 100b, 100c, and 100d that perform desired processing on wafers 200 are connected to the side where the load lock chamber 130 is not installed. Hereinafter, one or more of the PMs 100a, 100b, 100c, and 100d may be referred to as PM 100.

[0029] Each of the PMs 100a, 100b, 100c, and 100d is provided with a chamber 101, which is one component of a substrate processing apparatus. Here, the chamber 101 is one or more of the chambers 101a to 101h. Specifically, the PM 100a is provided with the chambers 101a and 101b. The PM 100b is provided with the chambers 101c and 101d. The PM 100c is provided with the chambers 101e and 101f. The PM 100d is provided with the chambers 101g and 101h.

[0030] A loading / unloading port 148 is provided on the side wall of the housing 141 that faces each chamber 101. Here, the loading / unloading port 148 is one or more of loading / unloading ports 148b to 148h. For example, as shown in Fig. 2, loading / unloading port 148a is provided on the side wall of the housing 141 that faces chamber 101a. Similarly, loading / unloading ports 148b to 148h are provided on the side walls of the housing 141 that face each of chambers 101b to 101h, respectively.

[0031] GVs 149a to 149h are provided for each chamber 101. Specifically, GV 149a is provided between chamber 101a and TM 140. Similarly, GVs 149b to 149h are provided between chambers 101b to 101h and TM 140, respectively. One or more of GVs 149a to 149h may be referred to as GV 149.

[0032] Loading / unloading ports 148a to 148h are opened and closed, respectively, by the GVs 149. The wafer 200 is transferred between the transfer chamber 140 and the chamber 101 via the loading / unloading ports 148. That is, the transfer chamber 140 is configured to be able to communicate with the chambers 101b to 101h.

[0033] Furthermore, temperature sensors (temperature measurement units) 701a, 701b, 701c, 701d, 701e, 701f, 701g, 701h, 701i, and 701j that measure the temperature of the wafer 200 may be provided in front of each GV 135 and 149 within the transfer chamber 140. The temperature sensors are, for example, radiation thermometers. By providing the temperature sensors, it becomes possible to measure the temperature of the wafer 200 during transfer. When the temperature sensors 701a to 701j are not distinguished from one another, they are collectively referred to as temperature sensors 701.

[0034] Next, the chambers 101a to 101h will be described with reference to Figures 3 and 4. Because the chambers 101a to 101h each have the same configuration, they will be described here as one chamber 101. Each chamber 101 is configured to be capable of performing multiple processes. Details will be described below.

[0035] The chamber 101 includes a container 202. The container 202 is configured as a flat, sealed container with a circular cross section, for example. The container 202 is made of a metal material, for example, aluminum (Al) or stainless steel (SUS). Inside the container 202, there are formed a processing chamber 201 that forms a processing space for processing the wafer 200, and a transfer chamber 206 that has a transfer space through which the wafer 200 passes when being transferred to the processing chamber 201. The container 202 is configured of an upper container 202a and a lower container 202b. A partition plate 208 is provided between the upper container 202a and the lower container 202b.

[0036] An inlet / outlet 148 adjacent to the GV 149 is provided on the side of the lower vessel 202b, and the wafer 200 moves between the vessel and the transfer chamber 140 through the inlet / outlet 148. A plurality of lift pins 207 are provided on the bottom of the lower vessel 202b.

[0037] A substrate support part 210 that supports a wafer 200 is disposed in the processing chamber 201. The substrate support part 210 mainly includes a substrate mounting surface 211 on which the wafer 200 is mounted, a substrate mounting table 212 having the substrate mounting surface 211 on its surface, and a heater 213 as a heating part provided within the substrate mounting table 212. The substrate mounting table 212 is provided with through holes 214 through which the lift pins 207 pass, at positions corresponding to the lift pins 207. The substrate mounting table 212 may also be provided with a bias electrode 276 that applies a bias to the wafer 200 and the processing chamber 201.

[0038] A wiring 222 for supplying power is connected to the heater 213. The wiring 222 is connected to a heater control unit 223. The heater control unit 223 is electrically connected to a controller 280. The controller 280 controls the heater control unit 223 to operate the heater 213. In addition, the bias electrode 276 is connected to a bias adjustment unit 277, and is configured so that the bias can be adjusted by the bias adjustment unit 277.

[0039] The substrate mounting table 212 is supported by a shaft 217. The shaft 217 passes through the bottom of the container 202 and is connected to an elevator unit 218 outside the container 202. By operating the elevator unit 218 to raise and lower the shaft 217 and the substrate mounting table 212, the substrate mounting table 212 can raise and lower the wafer 200 placed on the substrate mounting surface 211.

[0040] The processing chamber 201 is configured, for example, by a buffer structure 230 (described later) and a substrate mounting table 212. Note that the processing chamber 201 may be configured with other structures as long as it can secure a processing space for processing the wafer 200.

[0041] When transporting the wafer 200, the substrate mounting table 212 is lowered to a transport position PO where the substrate mounting surface 211 faces the load / unload port 148, and when processing the wafer 200, it is raised until the wafer 200 is at a processing position within the processing chamber 201, as shown in FIG. 3.

[0042] A buffer structure 230 for diffusing gas is provided at the upper part (upstream side) of the processing chamber 201. The buffer structure 230 is mainly composed of a lid 231. A first gas supply unit 240, a second gas supply unit 250, and a third gas supply unit 260, which will be described later, are connected to a gas inlet hole 231a provided in the lid 231. Depending on the processing performed in each processing chamber 201, the connection between some of the gas supply systems and the gas inlet holes 231a may be omitted, or an additional gas supply unit may be connected to the gas inlet hole 231a. Although only one gas inlet hole 231a is shown in FIG. 3, a gas inlet hole may be provided for each gas supply unit.

[0043] Next, the exhaust unit 291 will be described. An exhaust pipe 292 is connected to the processing chamber 201. The exhaust pipe 292 is connected to the upper vessel 202a so as to be in communication with the processing chamber 201. The exhaust pipe 292 is provided with, in order from upstream, a pressure sensor 296 as a pressure detection unit that detects the pressure inside the processing chamber 201, and an APC 293 that is a pressure controller that controls the pressure inside the processing chamber 201 to a predetermined value based on data from the pressure sensor 296. The APC 293 has a valve element (not shown) with an adjustable opening, and adjusts the conductance of the exhaust pipe 292 in response to instructions from the controller 280. Furthermore, a valve 294 is provided in the exhaust pipe 292 upstream of the APC 293. The exhaust pipe 292, the valve 294, and the APC 293 are collectively referred to as the exhaust unit.

[0044] Furthermore, a vacuum pump 295 is provided downstream of the exhaust pipe 292. The vacuum pump 295 exhausts the atmosphere in the processing chamber 201 through the exhaust pipe 292.

[0045] The electrode 275, which serves as an activation unit (plasma generation unit), is connected to a matcher 271 and a high-frequency power supply 272 and is configured to be able to supply electromagnetic waves (high-frequency power or microwaves). This allows the gas supplied into the processing chamber 201 to be activated. The electrode 275 is also configured to be able to generate capacitively coupled plasma. Specifically, the electrode 275 is formed in a conductive plate shape and is configured to be supported by the upper vessel 202a. The activation unit is configured to include at least the electrode 275, the matcher 271, and the high-frequency power supply 272. The activation unit may be configured to include an impedance meter 274. The impedance meter 274 may be provided between the electrode 275 and the high-frequency power supply 272. By providing the impedance meter 274, the matcher 271 and the high-frequency power supply 272 can be feedback-controlled based on the measured impedance.

[0046] Next, the gas supply unit that supplies gas to the processing chamber 201 will be described with reference to FIG.

[0047] The first gas supply pipe 241 is provided with, in this order from the upstream direction, a first gas source 242 that supplies a first gas, an MFC 243, and a valve 244 that is an on-off valve. The first gas is an example of a process gas in the present disclosure. The first gas supply pipe 241, the MFC 243, and the valve 244 mainly configure a first gas supply unit 240. The first gas source 242 and the gas introduction hole 231a may be included in the first gas supply unit 240.

[0048] The second gas supply pipe 251 is provided with, in this order from the upstream direction, a second gas source 252 that supplies a second gas, an MFC 253, and a valve 254 that is an on-off valve. The second gas is an example of a process gas in the present disclosure. The second gas supply pipe 251 may be provided with a remote plasma unit (RPU) 255. The RPU 255 converts the second gas passing through the second gas supply pipe 251 into a plasma state. The second gas supply pipe 251, the MFC 253, and the valve 254 mainly constitute a second gas supply unit 250. The RPU 255 may be included in the second gas supply unit 250. The second gas source 252 and the gas introduction hole 231a may also be included in the second gas supply unit 250.

[0049] The third gas supply pipe 261 is provided with, in this order from the upstream direction, a third gas source 262 that supplies a third gas, an MFC 263, and a valve 264 that is an on-off valve. The third gas is, for example, an inert gas. The third gas may be a purge gas that purges the inside of the processing chamber 201. The third gas supply pipe 261, the MFC 263, and the valve 264 mainly configure a third gas supply unit 260. The third gas source 262 and the gas introduction hole 231a may be included in the third gas supply unit 260.

[0050] (Control unit) 1, the substrate processing apparatus 10 has a controller 280 that controls the operations of each part of the substrate processing apparatus 10. The controller 280 will be described with reference to FIG.

[0051] Controller 280, which is a control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) 280a, RAM (Random Access Memory) 280b, storage device 280c, and I / O port 280d. RAM 280b, storage device 280c, and I / O port 280d are configured to be able to exchange data with CPU 280a via internal bus 280e. Controller 280 is configured to be able to connect to an input / output device 282 configured as, for example, a touch panel, an external storage device 281, and the like.

[0052] The storage device 280c is configured with, for example, a flash memory, an HDD (Hard Disk Drive), etc. The storage device 280c readably stores a control program for controlling the operation of the substrate processing apparatus, a process recipe describing the procedures and conditions of the substrate processing described below, and calculation data and processing data generated in the process of setting the process recipe used to process the wafer 200. The process recipe is a combination of procedures in the substrate processing step described below that are executed by the controller 280 to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, control program, etc. are collectively referred to simply as a program. In this specification, the term "program" may refer to only the process recipe, only the control program, or both. The RAM 260b is configured as a memory area (work area) for temporarily storing data such as the program, calculation data, and processing data read by the CPU 260a.

[0053] The I / O port 280d is connected to the GVs 129, 135, and 149, the heater control unit 223, the APCs 162 and 293, the vacuum pumps 163 and 295, the pressure sensors 164 and 296, the matching box 271, the high-frequency power supply 272, the MFCs 153, 243, 253, 263, 501c, and 502c, the valves 154, 244, 254, 264, 294, 501b, and 502b, the RPU 255, the bias adjustment unit 277, the transfer robot 170, and the chiller 803. The I / O port 280d may also be connected to an impedance meter 274 and the like.

[0054] The CPU 280a as a calculation unit is configured to read and execute a control program from the storage device 280c, and also to read a process recipe from the storage device 280c in response to an input of an operation command from the input / output device 282, etc. The CPU 280a is configured to control the opening and closing operation of the GV 149, the operation of the heater control unit 223, the pressure adjustment operation of the APCs 162 and 293 based on the pressure sensors 164 and 296, the on / off control of the vacuum pumps 163 and 295, the gas flow rate control operation of the MFCs 153, 243, 253, 263, 501c and 502c, the gas activation operation of the RPU 255, the gas on / off control of the valves 154, 244, 254, 264, 294, 501b and 502b, the power matching operation of the matcher 271, the power control of the high frequency power supply 272, the control operation of the bias adjustment unit 277, the matching operation of the matcher 271 based on the measurement data measured by the impedance meter 274, the power control operation of the high frequency power supply 272, the transport operation of the transport robot 170, and the like, in accordance with the contents of the read process recipe. When controlling each component, the CPU 280a controls by transmitting / receiving control information according to the contents of the process recipe.

[0055] The controller 280 is not limited to being configured as a dedicated computer, but may also be configured as a general-purpose computer. For example, the controller 280 according to this embodiment can be configured by preparing an external storage device 281 (e.g., a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card) that stores the above-described program, and installing the program into a general-purpose computer using the external storage device 281. The storage device 280c and the external storage device 281 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, the term "recording medium" may refer to only the storage device 280c alone, only the external storage device 281 alone, or both.

[0056] (2) Manufacturing process of semiconductor devices Next, as one step in the manufacturing process of a semiconductor device, an example of processing a wafer 200 using multiple chambers with different processing temperatures will be described with reference to Fig. 6. This one step in the manufacturing process is performed in the above-mentioned substrate processing apparatus 10. In the following description, the operation of each part is controlled by a controller 280.

[0057] The term "wafer" used in this specification may refer to the wafer itself or to a laminate of the wafer and a predetermined layer or film formed on its surface. The term "surface of a wafer" used in this specification may refer to the surface of the wafer itself or to the surface of a predetermined layer or the like formed on the wafer. When described in this specification, "forming a predetermined layer on a wafer" may mean forming a predetermined layer directly on the surface of the wafer itself or forming a predetermined layer on a layer or the like formed on the wafer. When used in this specification, the term "substrate" is synonymous with the term "wafer".

[0058] In the present disclosure, "moving a substrate in a certain processing chamber A into another processing chamber B" is referred to as "transporting a substrate from processing chamber A to processing chamber B." Furthermore, when processing chamber A and processing chamber B are not specified, "transporting a substrate from processing chamber A to processing chamber B" may be simply referred to as "transporting a substrate" or "transport." In the following description, the point in time when the transfer mechanism supports the substrate in processing chamber A is referred to as "start of transfer," and the point in time when the transfer mechanism places the substrate in processing chamber B is referred to as "end of transfer." Note that the period during transfer (i.e., the period from the start of transfer to the end of transfer) may include a period during which the substrate is not being moved. Furthermore, the period during transfer may include a period during which the transfer mechanism is not supporting the substrate. Furthermore, substrate transport may be performed by multiple transfer mechanisms.

[0059] An example of a substrate processing process using PM 100a and PM 100b will be described below. Here, the example will be described in which processing is performed in the processing chamber 201 of chambers 101a and 101b of PM 100a as the first processing chamber to bring the wafer 200 to a first temperature, and processing is performed in the processing chamber 201 of chambers 101c and 101d of PM 100b as the second processing chamber to bring the wafer 200 to a second temperature higher than the first temperature.

[0060] (Transportation process S301) In the transfer step S301, the atmospheric transfer robot 122 picks up the wafer 200 in the pod 111 on the IO stage 110, transfers it into the load lock chamber 130, and places the wafer 200 on the supports 131a and 131b. Thereafter, the load lock chamber 130 is purged by the inert gas supply unit and the exhaust units 601 and 602, and the pressure inside the load lock chamber 130 becomes approximately the same as the pressure inside the transfer chamber 140. Next, the transfer robot 170 uses the arm 180 or 190 to transfer the wafer 200 from inside the load lock chamber 130 into the transfer chamber 140. Next, the transfer robot 170 transfers (transfers) the wafer 200 held by the arm 180 or 190 from inside the transfer chamber 140 to the processing chamber 201 of the PM 100a.

[0061] (Processing step (step A) S302) In the processing step S302, a process involving at least one of a chemical reaction, supply of a gas activated by plasma, and adsorption (chemisorption and / or physical adsorption) of a processing gas other than an inert gas is performed on at least a portion of the wafer 200.

[0062] For example, in step A of the processing process S303, in accordance with the process recipe, the first gas supply unit 240 and the third gas supply unit 260 of the PM 100a are controlled to supply the first gas and the third gas to the processing chamber 201 while the wafer 200 is heated to a first temperature. Also, the exhaust unit 291 is controlled to evacuate the processing chamber 201. In this way, the wafer 200 is processed.

[0063] (Transportation step (first transport) S303) After the wafer 200 has been subjected to a predetermined process, the transfer robot 170 uses the arm 180 or 190 to take out the wafer 200 from the processing chamber 201 of PM 100a into the transfer chamber 140. Next, the transfer robot 170 loads (transfers) the wafer 200 held by the arm 180 or 190 from the transfer chamber 140 into the processing chamber 201 of PM 100b. Here, the transfer of the wafer 200 from the processing chamber 201 of PM 100a to the processing chamber 201 of PM 100b is referred to as a first transfer.

[0064] During this transfer, the temperature control mechanism 310 performs temperature control (here, first temperature control 311) on a predetermined target according to the content of the transfer (here, the content of the first transfer). The first temperature control 311 will be described later. The predetermined target is, for example, at least one of the wafer 200, the gas in the transfer chamber 140, and an object in the transfer chamber 140 (e.g., arms 180, 190 of the transfer robot 170).

[0065] (Processing step (step B) S304) In the processing step S304, a process involving at least one of a chemical reaction, supply of a gas activated by plasma, and adsorption (chemisorption and / or physical adsorption) of a processing gas other than an inert gas is performed on at least a portion of the wafer 200.

[0066] For example, in step B of the processing process S304, the second gas supply unit 250 and the third gas supply unit 260 of the PM 100b are controlled to supply the second gas and the third gas into the processing chamber 201 in a state in which the wafer 200 is heated to the second temperature in accordance with the process recipe. Also, the exhaust unit 291 is controlled to evacuate the processing chamber 201. Alternatively, a gas in a plasma state may be supplied into the processing chamber 201 by using the RPU 255 or by supplying high frequency power to the bias electrode 276. In this way, the wafer 200 is processed.

[0067] (Judgment S305) Here, it is determined whether the processing of step A and step B has been performed a predetermined number of times on the wafer 200. If it is determined that the processing has not been performed the predetermined number of times, the transfer step S306 is performed. If it is determined that the processing has been performed the predetermined number of times, the transfer step S307 is performed.

[0068] (Transportation step (second transport) S306) After the wafer 200 has been subjected to a predetermined process in the processing chamber 201 of PM100b, the transfer robot 170 uses the arm 180 or 190 to take out the wafer 200 from the processing chamber 201 of PM100b into the transfer chamber 140. Next, the transfer robot 170 loads (transfers) the wafer 200 held by the arm 180 or 190 from the transfer chamber 140 into the processing chamber 201 of PM100a. Here, the transfer of the wafer 200 from the processing chamber 201 of PM100b to the processing chamber 201 of PM100a is referred to as a second transfer.

[0069] During this transfer, the temperature control mechanism 310 performs temperature control (here, second temperature control 312) on a predetermined target according to the content of the transfer (here, the content of the second transfer). The second temperature control 312 will be described later.

[0070] (Transportation process S307) When processing in the multiple chambers is completed, the transfer robot 170 uses the arm 180 or 190 to transfer the processed wafer 200 transferred from PM 100b into the load lock chamber 130, where the wafer 200 is transferred to the support units 131a and 131b within the load lock chamber 130. Thereafter, the pressure within the load lock chamber 130 is made approximately the same as atmospheric pressure by the inert gas supply unit and exhaust units 601 and 602. At this time, the wafer 200 may be cooled by the inert gas supplied into the load lock chamber 130. Next, the atmospheric transfer robot 122 picks up the wafer 200 from the support units 131a and 131b within the load lock chamber 130, transfers it into the atmospheric transfer chamber 120, and further stores it in the pod 111.

[0071] Next, the relationship between temperature control and transport will be explained using Figure 7. Figure 7 schematically shows the transition of temperature control output when periods of ongoing transport alternate with periods of no ongoing transport. Here, the content of transport in this disclosure includes whether or not there is ongoing transport. Also, in this disclosure, the energy required for the operation of the temperature control mechanism 310 to control the temperature of a specific target is sometimes referred to as the temperature control output. In other words, the higher the temperature control output, the more energy is consumed by the temperature control mechanism 310, and the more easily the temperature of the specific target changes. Also, an increase in consumed energy refers to, for example, an increase in the amount of power consumed by the temperature control mechanism 310 and an increase in the amount of material consumed in each temperature control.

[0072] A period in which a transfer is in progress is a period P1 in which at least one of the arms 180 and 190 is holding a wafer 200, and a period P0 in which no transfer is in progress is a period in which neither the arms 180 nor 190 is holding a wafer 200. In addition to the period P1 of the first transfer and the period P2 of the second transfer, the period in which a transfer is in progress may also include a period in which the arms 180 and 190 are carrying the wafer 200 from the load lock chamber 130 into the transfer chamber 140 and a period in which the arms 180 and 190 are carrying the wafer 200 from the transfer chamber 140 to the load lock chamber 130.

[0073] The temperature control performed by the temperature control mechanism 310 is controlled according to the type of transport. The temperature control includes, for example, at least one of first temperature control 311, second temperature control 312, third temperature control 313, fourth temperature control 314, fifth temperature control 315, sixth temperature control 316, and seventh temperature control 317, which will be described below.

[0074] First temperature control 311 is performed during the first transfer. Second temperature control 312 is performed during the second transfer, and is performed with a different output from that of first temperature control 311. Note that the first temperature control may be performed during at least a portion of the first transfer. Also, the second temperature control may be performed during at least a portion of the second transfer.

[0075] Before the second transfer, the wafer 200 is subjected to a process of bringing it to the second temperature, and after the second transfer, the wafer 200 is subjected to a process of bringing it to a first temperature, which is lower than the second temperature. That is, after the second transfer, the wafer 200 is cooled. Here, when the temperature control mechanism 310 cools a predetermined target, the time required for the process of bringing the wafer 200 to the first temperature in the processing chamber 201 can be shortened by performing the second temperature control 312 with a higher output than the first temperature control 311. Therefore, the number of wafers 200 that can be processed per unit time (throughput) can be improved. Furthermore, by performing the second temperature control 312 with a higher output than the first temperature control 311, damage to a part of the transfer robot 170 due to heat from the wafer 200 can be suppressed.

[0076] On the other hand, after the first transfer, a process is performed to bring the wafer 200 to a first temperature, and after the first transfer, a process is performed to bring the wafer 200 to a second temperature higher than the first temperature. That is, after the first transfer, the wafer 200 is heated. Here, by performing the second temperature control 312 at a lower output than the second temperature control 312, the time required to bring the wafer 200 to the second temperature in the processing chamber 201 can be shortened while reducing excessive energy consumption by the temperature control mechanism 310. Furthermore, the temperature of the wafer 200 to be transferred during the first transfer is lower than that of the wafer 200 during the second transfer, and the risk of damage to the transfer robot 170 due to heat from the wafer 200 is also relatively low. Therefore, since the second temperature control 312 can be performed at a lower output than the first temperature control 311, the energy consumed by the temperature control mechanism 310 to cool the transfer robot 170 can be reduced.

[0077] Similarly, when the temperature control mechanism 310 heats a predetermined target, the second temperature control 312 may be performed at a lower output than the first temperature control 311. Also, the first temperature control 311 may be performed at a higher output than the second temperature control 312. This makes it possible to obtain at least one of the effects of reducing energy consumption by the temperature control mechanism 310 and improving throughput.

[0078] From the above, by performing the first temperature control 311 and the second temperature control 312 with different outputs, it is possible to obtain at least one of the effects of reducing energy consumption by the temperature control mechanism 310 and improving throughput.

[0079] The third temperature control 313 is performed during a period P0 when no transfer is in progress, and is performed at a lower output than the first temperature control 311. Note that the third temperature control may be performed during at least a part of the period P0 when no transfer is in progress. This allows the energy consumption of the temperature control mechanism 310 to be reduced.

[0080] The fourth temperature control 314 is performed during a period P01 after the first transfer has ended and no transfer is in progress. The fifth temperature control 315 is performed during a period P02 after the second transfer has ended and no transfer is in progress, and is performed at a higher output than the fourth temperature control 314. Note that the fourth temperature control 314 and the fifth temperature control 315 may each be performed during at least part of the periods P01 and P02.

[0081] The temperature of the wafer 200 to be transferred during the first transfer is lower than the temperature of the wafer 200 to be transferred during the second transfer. Therefore, during period P02, the risk of damage to the transfer robot 170 due to heat from the wafer 200 is lower than during period P01. Therefore, by performing the fifth temperature control 315 at a lower output than the fourth temperature control 314, the energy consumption of the temperature control mechanism 310 can be reduced. Furthermore, the fifth temperature control 315 is performed at a higher output than the fourth temperature control 314. This allows the temperature of the objects in the transfer chamber 140 to be efficiently reduced, thereby preventing malfunctions of various mechanisms due to temperature increases. Here, it is preferable to perform the fifth temperature control 315 for a longer period than the fourth temperature control 314. This further facilitates the effects of reducing the energy consumption of the temperature control mechanism 310 and preventing malfunctions of various mechanisms.

[0082] The sixth temperature control 316 is performed during at least a part of a period P03 after the fourth temperature control 314 when no transfer is in progress, and is performed at a lower output than the fourth temperature control 314. The seventh temperature control 317 is performed during at least a part of a period P04 after the fifth temperature control 315 when no transfer is in progress, and is performed at a lower output than the fifth temperature control 315. This makes it possible to reduce the energy consumed by the temperature control mechanism 310 after the temperature of the target is lowered by the fourth temperature control 314 or the fifth temperature control 315.

[0083] The transfer details may include at least one of the path the wafer 200 moves through the transfer chamber 140 during transfer and the time required for the transfer. For example, the path and time required for the transfer differ between the transfer from PM 100a to PM 100b and the transfer from PM 100a to PM 100c. When the temperature control is cooling, for example, if the transfer path and / or the time required for the transfer is long, the output of the temperature control mechanism 310 may be further increased. This can prevent malfunctions of various mechanisms caused by temperature increases. Furthermore, if the transfer path and / or the time required for the transfer is short, the output of the temperature control mechanism 310 may be further decreased. This can reduce the energy consumed by the temperature control mechanism 310. Furthermore, if the transfer path and / or the time required for the transfer is short, the output of the temperature control mechanism 310 may be further increased. This can efficiently cool the wafer 200 within the transfer chamber 140.

[0084] The temperature control mechanism 310 may control the content of the temperature control in accordance with the temperature of a predetermined object (e.g., the wafer 200). For example, temperature data is acquired while the processed wafer 200 is being transferred from the processing chamber 201 of PM100a or PM100b to the processing chamber 201 of PM100b or PM100a via the transfer chamber 140. The temperature data is acquired, for example, by measuring the temperature of the wafer 200 with at least one of temperature sensors 701a, 701b, 701c, 701d, 701e, 701f, 701g, 701h, 701i, and 701j provided in the transfer chamber 140.

[0085] For example, based on the acquired temperature data of the wafer 200, the amount of heat transfer gas supplied to the transfer chamber 140 by the heat transfer gas supply unit 150 is controlled to control the temperature of the wafer 200 (for example, to cool it). This makes it possible to efficiently control the temperature of a predetermined target while reducing excessive energy consumption by the temperature control mechanism 310. It is also possible to suppress consumption of heat transfer gas.

[0086] A specific example of the temperature control mechanism 310 will be described below.

[0087] The temperature control mechanism 310 may include a heat transfer gas supply unit 150 that controls the supply of heat transfer gas into the transfer chamber 140. The heat transfer gas supply unit 150 controls at least one of the following temperature control parameters: the temperature of the heat transfer gas supplied into the transfer chamber 140; whether or not the heat transfer gas is supplied into the transfer chamber 140; and the flow rate of the heat transfer gas supplied into the transfer chamber 140. For example, the temperature control output can be increased by increasing the temperature of the heat transfer gas supplied into the transfer chamber 140, starting the supply of the heat transfer gas into the transfer chamber 140, or increasing the flow rate of the heat transfer gas supplied into the transfer chamber 140. The heat transfer gas supply unit 150 may supply the heat transfer gas toward a predetermined target in the transfer chamber 140 for at least a portion of the transfer. This allows for more efficient temperature control of the predetermined target. Examples of heat transfer gases that can be used include inert gases such as nitrogen (N), helium (He), neon (Ne), argon (Ar), and krypton (Kr), as well as hydrogen (H).

[0088] The temperature control mechanism 310 may include a gas exhaust unit 160 that controls the exhaust of gas from the transfer chamber 140. The gas exhaust unit 160 controls at least one of the following temperature control items: whether or not to exhaust gas, and the flow rate of gas exhausted from the transfer chamber 140. For example, the output of the temperature control can be increased by starting the exhaust of gas from the transfer chamber 140, increasing the flow rate of the heat transfer gas supplied into the transfer chamber 140, etc.

[0089] The temperature control mechanism 310 may include a heat medium supply unit that controls the supply of a heat medium to a temperature-controlled object provided in the transfer chamber 140. The heat medium supply unit is at least one of a heat medium temperature adjustment unit, an on-off valve, and a flow rate control unit provided in a pipe connecting the object to the heat medium supply unit. The heat medium supply unit controls at least one of the following temperature control parameters: the temperature of the heat medium, whether or not the heat medium is supplied, and the flow rate of the heat medium supplied to the object. For example, the temperature control output can be increased by increasing the temperature difference between the target and the heat medium, starting the supply of the heat medium to the object, or increasing the flow rate of the heat medium to the object. The object to which the heat medium is supplied is an object that removes energy from or provides energy to a target object in the transfer chamber 140 by at least one of heat transfer and heat radiation. The object to which the heat medium is supplied is, for example, a cooling unit, a lamp, or an object (heat reflection suppressor) with a surface that more easily absorbs electromagnetic waves than other materials in the transfer chamber 140.

[0090] An example of the configuration of the object to which the heat medium is supplied and the heat medium supply unit will be described with reference to FIG.

[0091] A cooling unit 801 is provided on the ceiling or bottom wall of the housing 141 as an object to which a heat medium is supplied. Furthermore, a refrigerant flow path 802 as a pipe is configured in the cooling unit 801, and a refrigerant as a heat medium is supplied from a chiller 803 as a unit for adjusting the temperature of the heat medium. Here, the refrigerant is, for example, water (H2O), perfluoropolyether (PFPE), or the like. The chiller 803 may further include an MFC as an opening / closing valve and a flow rate control unit. Furthermore, an MFC as an opening / closing valve and a flow rate control unit may be provided in the refrigerant flow path 802.

[0092] According to this aspect, in addition to the above-mentioned effects, one or more of the following effects can be obtained.

[0093] (a) Since the temperature of the wafer 200 can be controlled during transfer, the time required for temperature control in the processing chamber 201 at the transfer destination can be reduced. As a result, the number of wafers 200 that can be processed per unit time (throughput) can be improved.

[0094] (b) Since the temperature control of a predetermined object can be controlled in accordance with the transport content, excessive energy consumption by the temperature control mechanism 310 can be reduced.

[0095] Although one embodiment of the present disclosure has been specifically described above, the present disclosure is not limited to the above-described embodiment and can be modified in various ways without departing from the spirit of the present disclosure.

[0096] In the above description, the case where a predetermined object is cooled as the temperature control has been described as an example. However, the present disclosure is not limited to this. Even if the temperature control is performed by heating a predetermined object, at least some of the above-described effects can be obtained.

[0097] In the above-described embodiment, an example of forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at a time has been described. The present disclosure is not limited to the above-described embodiment and can be suitably applied, for example, to a case where a film is formed using a batch-type substrate processing apparatus that processes several substrates at a time. Furthermore, in the above-described embodiment, an example of forming a film using a substrate processing apparatus having a cold-wall processing furnace has been described. The present disclosure is not limited to the above-described embodiment and can be suitably applied to a case where a film is formed using a substrate processing apparatus having a hot-wall processing furnace.

[0098] When using these substrate processing apparatuses, each process can be performed under the same process procedures and conditions as in the above-described embodiment, and the same effects as in the above-described embodiment can be obtained. [Explanation of symbols]

[0099] 201 Processing chamber (first processing chamber, second processing chamber) 140 Transport room (transport room) 170...Transport robot (transport control mechanism) 310 Temperature control mechanism 280 Controller (control unit)

Claims

1. a first processing chamber in which processing of the substrate to a first temperature is performed; a second processing chamber in which processing of the substrate to a second temperature higher than the first temperature is performed; a transfer chamber configured to be able to communicate with the first processing chamber and the second processing chamber and including a transfer mechanism that transfers the substrate; a temperature control mechanism for controlling the temperature of a predetermined object within the transfer chamber; Controlling the transfer of the substrate between the first processing chamber and the second processing chamber; Controlling the temperature control in accordance with the transporting process; a control unit configured to be able to control the transport mechanism and the temperature control mechanism so that A substrate processing apparatus having:

2. The control unit The contents of the transport are: a first transfer in which the substrate is transferred from the first processing chamber to the second processing chamber; a second transfer in which the substrate is transferred from the second treatment chamber to the first treatment chamber; The temperature control is a first temperature control that is performed during at least a portion of the first transfer; a second temperature control that is performed during at least a part of the second transfer and that is performed with an output different from that of the first temperature control, configured to control the transport mechanism and the temperature control mechanism; The substrate processing apparatus according to claim 1 .

3. the temperature control mechanism cools the predetermined object; the control unit is configured to control the transport mechanism and the temperature control mechanism so that the second temperature control is performed at a higher output than the first temperature control. The substrate processing apparatus according to claim 2 .

4. The control unit The content of the transport includes whether the transport is in progress or not; The temperature control may further include a third temperature control that is performed during at least a portion of a period in which the transfer is not in progress and that is performed at a lower output than the first temperature control. configured to control the transport mechanism and the temperature control mechanism; The substrate processing apparatus according to claim 3 .

5. The control unit The content of the transport includes whether the transport is in progress or not; The temperature control is a fourth temperature control that is performed during at least a portion of a period after the first transfer is completed and during which the transfer is not in progress; a fifth temperature control that is performed after the second transfer is completed and during at least a portion of a period during which the transfer is not in progress, and that is performed at an output higher than that of the fourth temperature control; configured to control the transport mechanism and the temperature control mechanism; The substrate processing apparatus according to claim 3 .

6. The control unit is configured to control the temperature as follows: a sixth temperature control that is performed after the fourth temperature control and during at least a portion of a period during which the transfer is not in progress, and that is performed at an output lower than that of the fourth temperature control; and a seventh temperature control that is performed after the fifth temperature control and during at least a part of a period in which the transfer is not in progress, and that is performed at an output lower than that of the fifth temperature control. configured to control the transport mechanism and the temperature control mechanism; The substrate processing apparatus according to claim 5 .

7. 2. The substrate processing apparatus according to claim 1, wherein the control unit is configured to control the transfer mechanism and the temperature control mechanism so that the content of the transfer includes at least one of a path along which the substrate moves within the transfer chamber during the transfer and a time required for the transfer.

8. The substrate processing apparatus according to claim 1 , wherein the temperature control mechanism controls the temperature of at least one of the substrate, the gas in the transfer chamber, and an object in the transfer chamber as the predetermined target.

9. Further, a temperature measuring unit for measuring the temperature of the predetermined object is provided. The substrate processing apparatus according to claim 1 , wherein the temperature control mechanism controls the temperature control depending on the temperature measured by the temperature measurement unit.

10. 2. The substrate processing apparatus of claim 1, wherein the first processing chamber and the second processing chamber are configured to be capable of performing processing therein involving at least one of a chemical reaction, supply of a gas in a plasma state, and adsorption of a processing gas other than an inert gas on at least a portion of the substrate.

11. 11. The substrate processing apparatus according to claim 1, wherein the temperature control mechanism includes a heat transfer gas supply unit that controls the supply of a heat transfer gas into the transfer chamber.

12. 12. The substrate processing apparatus according to claim 11, wherein the heat transfer gas supply unit controls at least one of the temperature of the heat transfer gas, whether or not the heat transfer gas is supplied into the transfer chamber, and the flow rate of the heat transfer gas supplied into the transfer chamber, as the content of the temperature control.

13. The substrate processing apparatus according to claim 11 , wherein the heat transfer gas supply unit supplies the heat transfer gas toward the predetermined target in the transfer chamber during at least a part of the transfer.

14. 11. The substrate processing apparatus according to claim 1, wherein the temperature control mechanism includes an exhaust unit that controls exhaust of gas from within the transfer chamber.

15. The substrate processing apparatus according to claim 14 , wherein the exhaust unit controls at least one of whether or not the exhaust is performed and a flow rate of gas exhausted from the transfer chamber, as the content of the temperature control.

16. 11. The substrate processing apparatus according to claim 1, wherein the temperature control mechanism is a heat medium supply unit that controls the supply of a heat medium to the object in the transfer chamber.

17. 17. The substrate processing apparatus according to claim 16, wherein the heat medium supply unit controls at least one of a temperature of the heat medium, whether or not the heat medium is supplied to the object, and a flow rate of the heat medium supplied to the object, as the content of the temperature control.

18. (a) bringing a substrate in a first processing chamber to a first temperature; (b) bringing the substrate in the second processing chamber to a second temperature higher than the first temperature; (c) transferring the substrate between the first processing chamber and the second processing chamber via a transfer chamber; (d) controlling the temperature of a predetermined object in the transfer chamber; and The temperature control is controlled according to the transport. Substrate processing method.

19. (a) bringing a substrate in a first processing chamber to a first temperature; (b) bringing the substrate in the second processing chamber to a second temperature higher than the first temperature; (c) transferring the substrate between the first processing chamber and the second processing chamber via a transfer chamber; (d) controlling the temperature of a predetermined object in the transfer chamber; and The temperature control is controlled according to the transport. A method for manufacturing a semiconductor device.

20. (a) bringing a substrate in a first processing chamber to a first temperature; (b) bringing the substrate in the second processing chamber to a second temperature higher than the first temperature; (c) transferring the substrate between the first processing chamber and the second processing chamber via a transfer chamber; (d) performing temperature control on a predetermined object in the transfer chamber, the temperature control being controlled in accordance with the content of the transfer; and The temperature control is controlled according to the transport. A program that causes a computer to execute the procedure in a substrate processing apparatus.

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