Surface profiling and texturing of chamber component

Abstract

To provide a method improved for uniformly depositing a material on a substrate.SOLUTION: A method comprises: measuring the parameters of a reference substrate or heating pedestal using one or more sensors; and physically correcting the surface of a chamber component on the basis of the measured parameters.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate generally to semiconductor processing equipment. [Background technology]

[0002]

[0002] Integrated circuits contain multiple layers of materials deposited by various techniques, including chemical vapor deposition (CVD) or atomic layer deposition (ALD). Deposition of materials onto semiconductor substrates via CVD or ALD is a typical step in the process of fabricating integrated circuits. In certain applications, the present inventors have observed undesirable non-uniformities in the materials deposited onto substrates via CVD or ALD. These non-uniformities lead to additional costs incurred in planarizing or otherwise repairing the substrate prior to further processing, or to potential failure of the entire integrated circuit.

[0003] Accordingly, the present inventors have provided an improved method and apparatus for uniformly depositing material on a substrate. Summary of the Invention

[0004]

[0004] Provided herein are methods and apparatus for surface profiling and texturing of chamber components for use in a process chamber, chamber components having such surface profiling or texturing, and methods of using the same. In some embodiments, the methods include measuring parameters of a reference substrate or a heated pedestal with one or more sensors and physically modifying the surface of the chamber component based on the measured parameters.

[0005]

[0005] In some embodiments, a non-transitory computer-readable medium for storing computer instructions, which when executed by at least one processor, cause the at least one processor to perform a method including measuring parameters of a reference substrate or a heated pedestal using one or more sensors and physically modifying a surface of a chamber component based on the measured parameters.

[0006]

[0006] In some embodiments, the processing system includes a first process chamber having a slit valve door that facilitates transfer of a reference substrate into and out of the first process chamber, or a first process chamber having a heated pedestal disposed in the first process chamber, one or more sensors disposed in the first process chamber and configured to measure parameters of the reference substrate or the heated pedestal, and a texturing tool disposed in a second process chamber that textures a surface of a chamber component based on the measured parameters.

[0007]

[0007] In some embodiments, the chamber part includes a body and a surface of the body configured to face the interior of the process chamber, the surface of the body having a region with an emissivity that increases continuously from one end of the region to the opposite end of the region.

[0008]

[0008] Other and further embodiments of the present disclosure are described below.

[0009]

[0009] The embodiments of the present disclosure summarized above and described in more detail below can be understood by reference to the exemplary embodiments of the present disclosure illustrated in the accompanying drawings. However, the accompanying drawings merely illustrate typical embodiments of the present disclosure and therefore should not be considered limiting in scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1]FIG. 1 illustrates a cluster tool suitable for performing methods for processing substrates according to some embodiments of the present disclosure. [Figure 2] 1 is a schematic side view of a process chamber for measuring parameters of a substrate or a heated pedestal, according to some embodiments of the present disclosure. [Figure 3A] FIG. 1 is a schematic side view of a process chamber for texturing a chamber part according to some embodiments of the present disclosure. [Figure 3B] FIG. 1 is a schematic side view of a process chamber for texturing a chamber part according to some embodiments of the present disclosure. [Figure 4] FIG. 1 is a schematic side view of a process chamber according to some embodiments of the present disclosure. [Figure 5] FIG. 1 illustrates a method according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0016] To facilitate understanding, the same reference numerals have been used, wherever possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0012]

[0017] Provided herein are methods and apparatus for surface profiling and texturing of chamber components for use in a process chamber. Also provided herein are chamber components having such profiled or textured surfaces and methods for their use. The inventors have identified a correlation between measured substrate parameters or measured heated pedestal parameters and the surface profile of a particular chamber component within a process chamber. The present methods and apparatus are directed to modifying the surface of a chamber component based on measured parameters of the substrate or heated pedestal. The resulting surface advantageously has a surface profile that improves film uniformity on the substrate during processing. The methods described herein can be performed in individual process chambers, which can be provided in a stand-alone configuration, or as part of a multi-chamber processing system, e.g., a cluster tool.

[0013]

[0018] FIG. 1 illustrates a cluster tool 100 suitable for performing methods for processing substrates according to some embodiments of the present disclosure. Examples of cluster tools 100 include the CENTURA® and ENDURA® tools available from Applied Materials, Inc., Santa Clara, California. The methods described herein may be performed using other cluster tools having suitable process chambers coupled thereto or in other suitable process chambers. For example, in some embodiments, the methods of the present invention described above may be advantageously performed in a cluster tool with limited or no vacuum interruptions between processing steps. For example, reducing vacuum interruptions may limit or prevent contamination of any substrates being processed in the cluster tool.

[0014]

[0019] Cluster tool 100 includes a vacuum-tight processing platform (processing platform 101), a factory interface 104, and a system controller 102. Processing platform 101 includes multiple processing chambers, such as 114A, 114B, 114C, and 114D, operably coupled to a vacuum transfer chamber (transfer chamber 103). Factory interface 104 is operably coupled to transfer chamber 103 by one or more load lock chambers, such as 106A and 106B shown in FIG.

[0015]

[0020] In some embodiments, the factory interface 104 includes at least one docking station 107 and at least one factory interface robot 138 to facilitate substrate transfer. The at least one docking station 107 is configured to receive one or more front-opening unified pods (FOUPs). Four FOUPs, identified as 105A, 105B, 105C, and 105D, are shown in FIG. 1 . The at least one factory interface robot 138 is configured to transfer substrates from the factory interface 104 through the load lock chambers 106A and 106B to the processing platform 101. The load lock chambers 106A and 106B each have a first port coupled to the factory interface 104 and a second port coupled to the transfer chamber 103. In some embodiments, the load lock chambers 106A and 106B are coupled to one or more service chambers (e.g., service chambers 116A and 116B). The load lock chambers 106A and 106B are coupled to a pressure control system (not shown) to pump down and evacuate the load lock chambers 106A and 106B to facilitate the passage of substrates between the vacuum environment of the transfer chamber 103 and the substantially ambient (e.g., atmospheric) environment of the factory interface 104.

[0016]

[0021] The transfer chamber 103 has a vacuum robot 142 disposed therein. The vacuum robot 142 can transfer substrates 121 between the load lock chambers 106A and 106B, the service chambers 116A and 116B, and the processing chambers 114A, 114B, 114C, and 114D. In some embodiments, the vacuum robot 142 includes one or more upper arms rotatable about respective shoulder axes. In some embodiments, the one or more upper arms are coupled to respective forearm and wrist members such that the vacuum robot 142 can extend into and retract from any processing chamber coupled to the transfer chamber 103.

[0017]

[0022] Processing chambers 114A, 114B, 114C, and 114D are coupled to the transfer chamber 103. Processing chambers 114A, 114B, 114C, and 114D may each include a chemical vapor deposition (CVD) chamber, an atomic layer deposition (ALD) chamber, a physical vapor deposition (PVD) chamber, a plasma enhanced atomic layer deposition (PEALD) chamber, an annealing chamber, etc. Other types of processing chambers may also be used if the results of substrate processing are found to be dependent on texturing the surfaces of chamber components as taught herein.

[0018]

[0023] In some embodiments, one or more additional process chambers, such as service chambers 116A and 116B, may also be coupled to the transfer chamber 103. In some embodiments, the service chambers 116A and 116B are coupled to the load lock chambers 106A and 106B, respectively, and operate at atmospheric pressure. The service chambers 116A and 116B may be configured to perform processes such as degassing, alignment, metrology, cool-down, texturing, and the like. For example, the service chamber 116A may be a metrology chamber that includes one or more sensors 144 for measuring parameters of a substrate disposed therein. While FIG. 1 shows one or more sensors 114 disposed in the service chamber 116A, the one or more sensors 114 may be disposed in the service chamber 116B and / or one or more of the processing chambers 114A, 114B, 114C, or 114D.

[0019]

[0024] The system controller 102 controls the operation of the cluster tool 100 using direct control of the service chambers 116A and 116B and the process chambers 114A, 114B, 114C, and 114D, or alternatively, by controlling computers (or controllers) associated with the service chambers 116A and 116B and the process chambers 114A, 114B, 114C, and 114D. The system controller 102 generally includes a central processing unit (CPU) 130, memory 134, and support circuits 132. The CPU 130 may be one of any form of general-purpose computer processor available in an industrial environment. The support circuits 132 are conventionally coupled to the CPU 130 and may include cache, clock circuits, input / output subsystems, power supplies, etc. Software routines, such as the processing methods described above, may be stored in the memory 134 and, when executed by the CPU 130, transform the CPU 130 into a special-purpose computer (the system controller 102). The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the cluster tool 100 .

[0020]

[0025] In operation, the system controller 102 enables data collection and feedback from each chamber and system and provides instructions to system components to optimize performance of the cluster tool 100. For example, the memory 134 may be a non-transitory computer-readable storage medium having instructions that, when executed by the CPU 130 (or the system controller 102), perform the methods described herein. A recipe may include information related to one or more parameters associated with one or more of the components of the cluster tool 100 or one or more substrates placed on the cluster tool 100. For example, the system controller 102 may collect data from one or more sensors 144.

[0021]

[0026] 2 is a simplified schematic side view of a process chamber 200 for measuring parameters of a substrate or a heated pedestal according to some embodiments of the present disclosure. In some embodiments, the process chamber 200 is a first process chamber. The process chamber 200 may be a stand-alone process chamber or may be part of a cluster tool, such as the cluster tool 100 described above. In some embodiments, the process chamber 200 is service chamber 116A or 116B, or one of process chambers 114A, 114B, 114C, or 114D.

[0022]

[0027] The process chamber 200 includes a chamber body 202 that defines an interior volume 208. In some embodiments, the process chamber 200 includes a slit valve door 220 coupled to the chamber body 202 to facilitate transfer of a reference substrate 206 into and out of the process chamber 200. In some embodiments, a substrate support 204 is disposed in the interior volume 208 to support the reference substrate 206. In some embodiments, the substrate support 204 includes a heating pedestal 210 having one or more heating elements 212 disposed therein. The one or more heating elements 212 are coupled to one or more power sources (not shown). The heating pedestal 210 may be disposed in the process chamber 200 from the bottom or top of the process chamber 200. In some embodiments, one or more sensors 144 are disposed on an opposite side of the interior volume 208 from the substrate support 204. In some embodiments, the one or more sensors 144 are configured to measure parameters of the reference substrate 206. In some embodiments, the one or more sensors 144 are configured to measure parameters of the heated pedestal 210. In embodiments where the one or more sensors 144 are configured to measure parameters of the heated pedestal 210, the reference substrate 206 is not disposed in the interior volume 208, thereby allowing the one or more sensors 144 to have a clear line of sight to the top surface of the heated pedestal 210. The one or more sensors 144 may include an array of detectors, such as radiation detectors, interferometers, infrared cameras, spectrometers, etc., to measure one or more parameters, such as substrate temperature, substrate film thickness, dielectric constant, substrate film stress, or heated pedestal temperature. While shown in FIG. 2 as being positioned opposite the substrate support 204, alternatively or in combination, the one or more sensors 144 may be positioned in other locations, such as adjacent the slit valve door 220, to measure substrate parameters as the substrate is introduced into or removed from the process chamber 200 (see, for example, FIG. 4).

[0023]

[0028] The controller 215 is coupled to the one or more sensors 144 and collects data from the one or more sensors 144 related to measured parameters of the reference substrate 206 or the heated pedestal 210. In some embodiments, the controller 215 may be configured and function similarly to the system controller 102. In some embodiments, the controller 215 is the system controller 102.

[0024]

[0029] 3A is a schematic side view illustrating a process chamber 300 for texturing a chamber part 302 according to some embodiments of the present disclosure. The chamber part 302 may be any part in a reference process chamber and may include a surface exposed to a processing volume of the reference process chamber. For example, the chamber part 302 may be a showerhead, a liner, a substrate support, a process kit, etc., such as the showerhead 428, the liner 414, the substrate support 424, or the process kit 436 described below with respect to FIG. 4. The process kit may include an edge ring, a deposition ring, a cover ring, a process shield, etc. As shown in FIGS. 3A and 3B, the chamber part is a showerhead.

[0025]

[0030] In some embodiments, process chamber 300 is a second process chamber that is different from a first process chamber (e.g., process chamber 200). Alternatively, in some embodiments, process chamber 300 and process chamber 200 are the same process chamber. Process chamber 300 may be a stand-alone process chamber. Process chamber 300 includes a chamber body 324 that defines an interior volume 322 and a slit valve door 320 coupled to the chamber body 324 to facilitate transporting chamber components 302 into and out of process chamber 300 for use in the process chamber (e.g., process chamber 400). Chamber components 302 may be mounted on a substrate support 306 disposed in the interior volume 322.

[0026]

[0031] The chamber component 302 includes a body 304 and an edge 312. The body 304 includes a surface 308 exposed to a processing volume of the process chamber (e.g., a processing volume 450 of the process chamber 400, described below with respect to FIG. 4 ). The texturing tool 348A is disposed in the process chamber 300 and textures the surface 308 of the chamber component 302 based on parameters measured in the process chamber 200. For example, in the case of a showerhead, liner, substrate support, process kit, etc., texturing the surface 308 of the chamber component 302 can be a local modification to correct for local high or low deposition areas on the reference substrate 206, or a global modification to create a profile that corrects the substrate deposition profile.

[0027]

[0032] In some embodiments, texturing the surface 308 of the chamber component 302 comprises increasing the surface roughness of a region of the chamber component 302. In some embodiments, texturing the surface 308 of the chamber component 302 comprises decreasing the surface roughness of a region of the chamber component 302. In some embodiments, texturing the surface 308 of the chamber component 302 comprises decreasing the surface roughness of one region of the chamber component 302 and increasing the surface roughness of another region of the chamber component 302. Texturing the surface 308 of the chamber component 302 advantageously facilitates control of the substrate temperature in a process chamber in which the chamber component 302 is installed, thereby facilitating control of the uniformity of a film formed in the process chamber.

[0028]

[0033] In some embodiments, the texturing tool 348A is a laser texturing tool. The texturing tool 348A is coupled to the power supply 316 to provide power to the texturing tool 348A. The texturing tool 348A is configured to physically modify or texture the surface 308 of the body 304 at the nanometer level using photon energy directed at the chamber part 302. In some embodiments, texturing the surface 308 of the body 304 includes modifying the emissivity profile of the surface 308. In some embodiments, texturing the surface 308 of the body includes modifying the surface area profile of the surface 308.

[0029]

[0034] Emissivity is a measure of the efficiency with which a surface releases thermal energy. Typically, emissivity increases with increasing surface roughness at a given temperature. For example, when texturing the surface 308, the emissivity of the smoother portions of the surface 308 generally decreases, while the emissivity of the rougher portions of the surface 308 generally increases. In thermally driven processes, thermal non-uniformities on the substrate result in non-uniform deposition on the substrate. Varying the emissivity of chamber components in a first region, such as the center region, compared to a second region, such as an outer region, can advantageously counteract processes that typically result in non-uniform deposition, such as high center deposition, high middle deposition, or high edge deposition, among other non-uniform deposition patterns or other process result patterns in non-deposition processes. Varying the emissivity of chamber components can also counteract localized cool or hot spots on the substrate. Regions of different emissivity can make the substrate more thermally uniform, thus resulting in more uniform results from thermally driven processes. Additionally, the emissivity profile of a part can be controlled to be intentionally non-uniform to counter non-uniform process results caused by factors other than thermal non-uniformity, such as plasma non-uniformity, non-uniform process gas distribution on the substrate, etc.

[0030]

[0035] 3B is a schematic side view illustrating an alternative embodiment of a process chamber 300 for texturing a chamber part 302 according to some embodiments of the present disclosure. In some embodiments, as shown in FIG. 3B, a texturing tool 348B is positioned in the process chamber 300 similar to the texturing tool 348A described above with respect to FIG. 3A. The texturing tool 348B may be a water jet tool, a bead blast tool, a chemical texturing tool, etc. The texturing tool 348B is coupled to the source material 340.

[0031]

[0036] In embodiments where the texturing tool 348B is a water jet tool, the source material 340 comprises water. The water jet tool is configured to texture the surface 308 of the chamber part 302 using high-pressure water directed at the chamber part 302.

[0032]

[0037] In embodiments where the texturing tool 348B is a bead blast tool, the source material 340 includes an abrasive material. The bead blast tool is configured to direct the abrasive material toward the chamber part 302 to texture the surface 308.

[0033]

[0038] In embodiments where the texturing tool 348B is a chemical texturing tool, the source material 340 includes a process fluid (e.g., a process gas, a process liquid, or a combination thereof). The chemical texturing tool is configured to direct a process fluid toward the chamber component 302, with or without a mask layer disposed on the chamber component 302, to texture the surface 308. In some embodiments, the process fluid is applied to the surface 308 of the chamber component 302, and then an initiator is applied to the desired area of ​​the surface 308 for a predetermined time. The initiator may be a chemical, heat, or light. In some embodiments, the process fluid is an organic compound that can dissociate into an acid that etches the surface 308 of the chamber component 302. In some embodiments, the chamber component is made of aluminum.

[0034]

[0039] 3A and 3B, controller 315 is configured to provide instructions to texturing tools 348A, 348B. In some embodiments, controller 315 may be configured and function similarly to system controller 102. Controller 315 may provide instructions to texturing tool 348A or texturing tool 348B based on data collected from one or more sensors 144.

[0035]

[0040] In some embodiments, after modification via texturing tool 348A or texturing tool 348B, surface 308 has an emissivity profile having an irregular pattern. In some embodiments, after modification of surface 308, region 310 may have an emissivity that increases continuously from one end of region 310 to the opposite end of region 310. In some embodiments, region 310 extends from a center 318 of body 304 to an edge 312 of body 304. In some embodiments, body 304 includes an intermediate portion 314, and region 310 extends from the center 318 of the body to an outer periphery of intermediate portion 314. The outer periphery of intermediate portion 314 is located between center 318 and edge 312. In some embodiments, surface 308 of body 304 has an emissivity profile that is mapped to a substrate (e.g., reference substrate 206) being processed in a given process chamber (e.g., process chamber 400).

[0036]

[0041] In some embodiments, after modification via texturing tool 348A or texturing tool 348B, surface 308 has a surface area profile with an irregular pattern. In some embodiments, after modification, surface 308 may have region 310 with a surface area that increases continuously from one end of region 310 to the opposite end of region 310. During use, the inventors have observed an increase in the concentration of process gas adjacent to regions of surface 308 with a larger localized surface area, which may result in increased reaction with a substrate being processed near the region with the larger localized surface area. In some embodiments, surface 308 of body 304 has a surface area profile that is mapped to a substrate (e.g., reference substrate 206) being processed in a given process chamber (e.g., process chamber 400). In some embodiments, multiple (including all) chamber parts 302 within a single process chamber may be advantageously textured.

[0037]

[0042] 4 is a schematic side view illustrating a process chamber according to some embodiments of the present disclosure. In some embodiments, process chamber 400 is one of process chambers 114A, 114B, 114C, or 114D. Process chamber 400 may be a stand-alone process chamber or may be coupled to a vacuum transfer chamber (e.g., transfer chamber 103) of a cluster tool, such as cluster tool 100 described above. In some embodiments, process chamber 400 is a CVD chamber. However, chamber components of other types of processing chambers configured for different processes may also be modified as described herein.

[0038]

[0043] The process chamber 400 includes a chamber body 406 covered by a lid 404 that defines an interior volume 420 therein. In some embodiments, the process chamber 400 is a vacuum chamber suitably adapted to maintain a sub-atmospheric pressure within the interior volume 420 during substrate processing. The process chamber 400 may also include a process kit 436 or one or more liners 414 that surround various chamber components to prevent unwanted reactions between such components and process materials present within the interior volume 420. The chamber body 406 and lid 404 may be made of a metal such as aluminum. The chamber body 406 may be grounded via a bond to earth ground 430.

[0039]

[0044] A substrate support 424 is disposed within the interior volume 420 to support and hold the substrate 422. The substrate support 424 may generally include an electrostatic chuck, a vacuum chuck, or the like to hold the substrate 422 thereon during processing. The substrate support 424 may include a heated pedestal similar to the heated pedestal 210 described above with respect to FIG. 2. The substrate support 424 is coupled to a hollow support shaft 412 to provide a conduit for supplying, for example, backside gas, process gas, fluid, coolant, power, or the like to the substrate support 424. In some embodiments, the hollow support shaft 412 is coupled to a lift mechanism 413, such as an actuator or motor, that provides vertical movement of the substrate support 424 between a processing position and a lower transfer position. The lift mechanism 413 may also provide rotation of the substrate. Alternatively, a separate substrate rotation mechanism (e.g., a motor or drive) may be provided to rotate the substrate support 424, or the substrate support 424 may be rotatably fixed. The substrate support 424 may include lift pin openings (not shown) that accommodate lift pins (not shown) for raising and lowering the substrate 422 onto and from the substrate support 424 .

[0040]

[0045] The process chamber 400 is coupled to and in fluid communication with a vacuum system 410 that includes a throttle valve (not shown) and a vacuum pump (not shown) used to evacuate the process chamber 400. The pressure inside the process chamber 400 can be adjusted by adjusting the throttle valve and / or the vacuum pump.

[0041]

[0046] The process chamber 400 is also coupled to and fluidly connected to a process gas supply 418 that can supply one or more process gases to the process chamber 400 for processing a substrate 422 disposed therein. In some embodiments, a showerhead 428 is disposed in the interior volume 420 opposite the substrate support 424, defining a process volume 450 therebetween. The showerhead 428 is configured to deliver one or more process gases from the process gas supply 418 to the process volume 450. The showerhead 428 includes a substrate-facing surface 432 (e.g., surface 308). In operation, a plasma 402 can be generated in the process volume 450 to perform one or more processes, for example. The plasma 402 can be generated by coupling power from a plasma power source (e.g., an RF plasma power source 470) to one or more process gases supplied through the showerhead 428 and igniting the process gases to generate the plasma 402. A bias RF power can be supplied to the substrate support 424 to attract ionized species formed in the plasma 402 toward the substrate 422 .

[0042]

[0047] The process chamber 400 has a slit valve door 438 to facilitate transfer of the substrate 422 into and out of the process chamber 400. In some embodiments, one or more sensors 144 are disposed in the process chamber 400 and configured to measure parameters of the substrate 422. In some embodiments, the one or more sensors 144 are disposed at or near the slit valve door 438 and configured to scan the substrate 422 as it is transferred into and / or out of the process chamber 400.

[0043]

[0048] A controller 415 is coupled to the process chamber 400 and controls the operation of the process chamber 400. In some embodiments, the controller 415 may be configured and function similarly to the system controller 102. In some embodiments, the controller 415 is the system controller 102.

[0044]

[0049] FIG. 5 illustrates a method 500 for modifying a chamber component according to some embodiments of the present disclosure. Method 500 generally begins at 502, where a parameter of a substrate (e.g., reference substrate 206) is measured across multiple locations on the substrate using one or more sensors (e.g., one or more sensors 144). In some embodiments, the multiple locations are across the entire surface of the substrate. In some embodiments, the multiple locations relate to locations of repeating structures (e.g., repeating dies) formed on the substrate. The substrate may be a semiconductor wafer, such as a 200 mm, 300 mm, or 450 mm wafer, or any other type of substrate used in thin film manufacturing processes. In some embodiments, the substrate may be any type of substrate suitable for display or solar cell applications. In some embodiments, the substrate may be a glass panel or a rectangular substrate.

[0045]

[0050] In some embodiments, the parameter is at least one of substrate temperature, substrate film thickness, dielectric constant, or substrate film stress. In some embodiments, multiple parameters may be measured. In some embodiments, the substrate temperature is not measured directly, but is determined based on measurements of at least one of substrate film thickness, dielectric constant, or substrate film stress. The substrate parameters may be measured in a stand-alone process chamber or may be measured as part of a multi-chamber processing system as described above.

[0046]

[0051] At 504, a target pattern is generated based on the measured parameters. In some embodiments, the target pattern is generated by applying a transfer function to the measured parameters of the substrate. In some embodiments, the transfer function is based on a single weighted input. In some embodiments, the transfer function is based on multiple weighted inputs. In some embodiments, when multiple parameters are measured, the transfer function is an average or weighted average of a first transfer function for a first measured parameter and a second transfer function for a second measured parameter. In some embodiments, the transfer function is one of a polynomial transfer function, a differential equation transfer function, or a linear algebraic transfer function. In some embodiments, the target pattern is a thermal map generated based on the measured parameters.

[0047]

[0052] At 506, the surface of the chamber component is physically modified (e.g., using texturing tool 348A or texturing tool 348B) based on the target pattern. The surface of the chamber component (e.g., chamber component 302) may be modified in a second process chamber. In some embodiments, the second process chamber (e.g., process chamber 300) is different from the first process chamber (e.g., process chamber 200). Alternatively, in some embodiments, the second process chamber and the first process chamber are the same process chamber. In some embodiments, the surface of the chamber component is modified via laser, water jet, bead blasting, or chemical texturing. In some embodiments, modifying the surface of the chamber component includes applying a surface finish to the chamber component having regions of different emissivity. In some embodiments, modifying the surface of the chamber component includes changing the surface area of ​​different regions of the surface.

[0048]

[0053] In some embodiments, measuring the parameters of the substrate or the heated pedestal and modifying the surface of the chamber component occur in a single process chamber. In some embodiments, measuring the parameters of the substrate or the heated pedestal and modifying the surface of the chamber component occur in different process chambers. In some embodiments, the parameters of the substrate are measured after the substrate is processed in a process chamber (e.g., process chamber 400), and the chamber component is installed in the process chamber after the surface of the chamber component is modified. In some embodiments, the modified chamber component is modified again according to the methods described herein after a suitable period of time. In some embodiments, the suitable period of time is from about 6 months to about 18 months. In some embodiments, the modified chamber component is modified again based on the initial measured parameters of the substrate.

[0049]

[0054] In some embodiments, the chamber part is aligned with the texturing tool before being modified based on the target pattern, so that the orientation of the substrate when measured correlates in a predetermined manner to the orientation of the chamber part before being modified. Once textured by texturing tool 348A or texturing tool 348B, the chamber part may be removed from the second process chamber and placed in any reference process chamber. In any of the foregoing, measuring parameters of the substrate or heated pedestal and modifying the surface of the chamber part may be performed in the same process chamber as any subsequent substrate processing or in a different process chamber from the subsequent substrate processing.

[0050]

[0055] At 508, the chamber component is optionally coated with a protective coating. In some embodiments, the chamber component is coated with the protective coating after modifying the surface of the chamber component. In some embodiments, the chamber component is coated with the protective coating before modifying the surface of the chamber component (i.e., before measuring a parameter of the substrate or heated pedestal at 502). In some embodiments, the chamber component is coated with the protective coating before modifying the surface of the chamber component, and is coated with the protective coating after modifying the surface of the chamber component. In the above embodiments, the protective coating applied after modifying the surface of the chamber component may comprise the same material or a different material than the protective coating applied before modifying the surface of the chamber component.

[0051]

[0056] In some embodiments, the protective coating has a thickness of about 0.05 micrometers to about 5.0 micrometers. The protective coating can be applied in situ or ex situ. In some embodiments, a protective coating comprising silicon oxide (SiO), silicon nitride (SiN), or silicon carbonitride (SiCN) is applied in situ. In some embodiments, a protective coating comprising a chemically inert metal oxide is applied ex situ.

[0052]

[0057] In some embodiments, the protective coating is reapplied or refreshed before modifying the surface of the chamber component, after modifying, or after the protective coating is applied before and after modification. The protective coating may be reapplied in situ via any of the suitable deposition processes described above, or may be reapplied ex situ. In embodiments where the protective coating is reapplied ex situ, the protective coating may be reapplied every 100 to 10,000 substrates processed to extend the life of the modified chamber component. In embodiments where the protective coating is reapplied in situ, the protective coating may be reapplied every time a substrate is processed, such as every 10 substrates, 100 substrates, 1,000 substrates, 2,000 substrates, or on any other periodic basis.

[0053]

[0058] In some embodiments, measuring a parameter of the substrate or heated pedestal and coating the chamber component occur in the same process chamber, and modifying the surface of the chamber component occurs in a different process chamber. In some embodiments, modifying the surface of the chamber component and coating the chamber component occur in the same process chamber, and measuring a parameter of the substrate or heated pedestal occurs in a different process chamber. In some embodiments, a protective coating may be applied to the modified chamber component via any of the deposition processes described above inside a process chamber (e.g., process chamber 400). In some embodiments, once a chamber component has been textured by texturing tool 348A or texturing tool 348B, it may be coated with a protective coating in a second process chamber, then removed from the second process chamber, and placed in a reference process chamber.

[0054]

[0059] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A method comprising: measuring parameters of the reference substrate or the heated pedestal with one or more sensors; physically modifying the surface of the chamber component based on said measured parameters; A method comprising:

2. Modifying the surface of the chamber component comprises: providing a surface finish on the chamber component having areas of different emissivity; or Varying the surface area of ​​different regions of said surface. The method of claim 1 , comprising:

3. The method of claim 1 , wherein the surface of the chamber component is modified via laser, water jet, bead blasting, or chemical texturing.

4. The method of claim 1 , wherein measuring the parameters of the reference substrate and modifying the surface of the chamber component occur in a single process chamber.

5. The method of claim 1 , wherein measuring the parameters of the reference substrate and modifying the surface of the chamber part are performed in different process chambers.

6. 10. The method of claim 1, further comprising applying a transfer function to the measured parameters of the reference substrate or the heated pedestal to generate a target pattern, and modifying a surface of the chamber part based on the target pattern.

7. The method of claim 1 , further comprising: generating a thermal map based on the measured parameters; and modifying a surface of the chamber component based on the thermal map.

8. The method of claim 1 , wherein the parameter is a substrate temperature, a substrate film thickness, a dielectric constant, a substrate film stress, or a heated pedestal temperature.

9. The method of claim 1 , further comprising coating the chamber component with a protective coating either before or after modifying the surface of the chamber component.

10. processing a substrate using the modified chamber component; reapplying the protective coating after processing the substrate; The method of claim 9 further comprising:

11. 8. The method of claim 1, further comprising coating the chamber component with a protective coating before modifying the surface of the chamber component, wherein modifying the surface of the chamber component and coating the chamber component are performed in a single process chamber.

12. 8. The method of claim 1, further comprising coating the chamber component with a protective coating before modifying the surface of the chamber component, wherein modifying the surface of the chamber component and coating the chamber component are performed in different process chambers.

13. 8. A non-transitory computer readable medium for storing computer instructions that, when executed by at least one processor, cause the at least one processor to perform the method of any one of claims 1 to 7.

14. 1. A processing system comprising: a first process chamber having a slit valve door for facilitating transfer of a reference substrate into and out of the first process chamber, or a first process chamber having a heated pedestal disposed in the first process chamber; one or more sensors disposed in the first process chamber and configured to measure parameters of the reference substrate or the heated pedestal; a texturing tool disposed in the second process chamber for texturing a surface of the chamber component based on the measured parameters; A processing system comprising:

15. 15. The processing system of claim 14, wherein the one or more sensors are disposed on the slit valve door of the first process chamber and configured to scan the reference substrate as the reference substrate is transferred into and / or out of the first process chamber.

16. The processing system of claim 14 , wherein the texturing tool is a laser tool, a water jet tool, a bead blast tool, or a chemical texturing tool.

17. The processing system of claim 14 , wherein the one or more sensors include an interferometer, a spectrometer, or an array of detectors and an infrared camera.

18. 17. The processing system of claim 14, wherein the first process chamber and the second process chamber are the same process chamber.

19. 17. The processing system of claim 14, wherein said heating pedestal comprises one or more heating elements.

20. A chamber component, The main body and a surface of the body configured to face the interior of a process chamber, the surface having a region with a continuously increasing emissivity from one end of the region to an opposite end of the region; A chamber part comprising:

21. The chamber component of claim 20 , wherein a surface of the body has an emissivity profile mapped to a reference substrate.

22. The chamber component of claim 20 , wherein the region extends from a center of the body to an edge of the body, or the body includes an intermediate portion and the region extends from a center of the body to an outer periphery of the intermediate portion.

23. The chamber part of claim 20 , wherein the chamber part is a showerhead, a liner, a substrate support, or a process kit.

24. 23. The chamber part of any one of claims 20 to 22, wherein the body is coated with silicon oxide (SiO), silicon nitride (SiN), silicon carbonitride (SiCN), or a combination thereof.

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