Vapor deposition mask for vapor depositing OLED pixel

Abstract

To provide a vapor deposition mask capable of controlling a warp and having an improved vapor deposition efficiency.SOLUTION: A vapor deposition mask including iron-nickel alloy includes a metal plate 100 having a first surface 101 and a second surface 102 opposite to the first surface. The metal plate includes an open hole TH1 including a small hole V1 on a first surface of the metal plate and a large surface hole V2 on a second surface; the end of the metal plate warps in the second surface direction; and a texture is formed on the second surface injected with a vapor deposition sauce without forming a texture on the first surface contacting a predetermined vapor deposition substrate.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The example relates to a deposition mask for OLED pixel deposition. [Background technology]

[0002] Display devices are used in a variety of devices. It is used not only on small devices such as smartphones and tablet PCs, but also on TVs, monitors, public It is applied to large devices such as public displays (PD). In particular, ultra-high resolution (500 PPI or more) has recently become popular. Increasing demand for high-resolution UHD (Ultra High Definition) High-resolution display devices are being applied to small and large devices. As a result, there is growing interest in technologies that can achieve low power consumption and high resolution.

[0003] The commonly used display devices are divided into LCD (Liquid Crystal Display) and LCD (Liquid Crystal Display). Crystal Display) and OLED (Organic Light Emitting ng Diode).

[0004] LCD is a display device driven by liquid crystal. Below the liquid crystal, CCFL (Cold Cathode Fluorescent t Lamp) or LED (Light Emitting Diode), etc. The light source is disposed on the structure, and the light source emits light using the liquid crystal disposed on the light source. It is a display device that is driven by adjusting the amount of light emitted.

[0005] OLED is a display device driven by organic materials and does not require a separate light source. The organic material itself acts as a light source, allowing it to be driven with low power. It can express a wide range of brightness and darkness, and has a response speed that is approximately 1,000 times faster than LCD. It has been attracting attention as a display device that can replace LCD due to its excellent viewing angle.

[0006] In particular, the organic material contained in the light-emitting layer of an OLED is formed by a fine metal mask (FMM). It can be deposited on a substrate using a deposition mask called a Fine Metal Mask. The deposited organic material has a pattern corresponding to the pattern formed on the deposition mask. The deposition mask is generally made of iron (Fe It is made of Invar alloy metal plate containing nickel (Ni). and a through hole penetrating through one surface and the other surface of the metal plate is formed in the one surface and the other surface. The through holes may be formed at positions corresponding to the pixel patterns. d), organic substances such as green and blue pass through the through holes in the metal plate. The photoresist can be evaporated onto a substrate, and a pixel pattern can be formed on the substrate.

[0007] On the other hand, the thickness and surface of the Invar alloy metal plate used as a deposition mask are modified. In order to achieve this, through holes can be formed in the metal plate after the rolling process.

[0008] At this time, when the metal plate is subjected to a rolling process, the stress distribution inside the metal plate must change randomly. The warping can result in the formation of surface waviness on the surface of the metal plate. As a result, the length of the metal plate in the minor axis direction changes in each region, and the length in the major axis also changes, resulting in the formation of metal. The straightness of the metal plate may be reduced.

[0009] Therefore, when deposition is performed on a deposition target using a deposition mask that has generated waves, The through-hole is not at the desired position, or the organic material is deposited too thinly in the deposition area of ​​the deposition target. This causes the problem of the particles acting as dirt.

[0010] Therefore, the warping of the metal plate due to the rolling process and the resulting surface waviness can be controlled. Therefore, a new evaporation mask that can achieve this is required. Summary of the Invention [Problem to be solved by the invention]

[0011] The embodiment provides a deposition mask that can control warpage and has improved deposition efficiency. Try to. [Means for solving the problem]

[0012] The deposition mask according to the embodiment includes an iron-nickel alloy, and has a first surface and an opposite surface to the first surface. a metal plate having a second surface that is a facet hole on the first surface of the metal plate and a front surface; a through hole including a large-area hole on the second surface, and the compressive stress on the first surface is the tensile stress of the second surface is greater than the tensile stress of the first surface, and the metal The metal plate is warped in the direction of the second surface, and the height difference between the highest point and the lowest point of the first surface is 3 μm or less. is. [Effects of the Invention]

[0013] The deposition mask according to the embodiment can control the residual stress inside the deposition mask. In detail, the deposition mask according to the embodiment has compressive stress and The distribution and magnitude of the tensile stress can be controlled.

[0014] As a result, the deposition mask according to the embodiment can control warpage of the deposition mask. That is, the deposition mask according to the embodiment can be formed by adjusting the warp direction, warp position, The degree of warping can be controlled.

[0015] This allows the deposition area of ​​the deposition mask to be kept flat with a curvature close to zero, and the non-deposition area to be The deposition area can be maintained to have a greater curvature than the deposition area.

[0016] Therefore, when the deposition mask and the deposition substrate are brought into contact with each other, Lifting of the deposition region and the deposition substrate can be minimized.

[0017] As a result, the deposition mask according to the embodiment has a gap between the deposition mask and the deposition substrate. Minimize the gap and the resulting unevenness of the deposition thickness, improving deposition efficiency. It is possible. [Brief explanation of the drawings]

[0018] [Figure 1] FIG. 1 is a cross-sectional view showing an organic material vapor deposition apparatus to which a vapor deposition mask according to an embodiment is applied. [Figure 2] 10 is a cross-sectional view illustrating the contact relationship between the metal plate of the deposition mask and the deposition substrate after a pretreatment process. FIG. [Figure 3] FIG. 10 is a plan view illustrating the surface waveform of the deposition mask. [Figure 4] 10A to 10C are diagrams illustrating a pretreatment step of a metal plate of an evaporation mask according to an embodiment. [Figure 5] 10A and 10B are diagrams illustrating the shape of the metal plate of the evaporation mask after a pretreatment process according to the embodiment. [Figure 6]6A and 6B are views showing scanning electron microscope (SEM) photographs of the first surface (FIG. 6) and the second surface (FIG. 7) of the metal plate of the deposition mask according to the example after the pretreatment process. [Figure 7] 6A and 6B are views showing scanning electron microscope (SEM) photographs of the first surface (FIG. 6) and the second surface (FIG. 7) of the metal plate of the deposition mask according to the example after the pretreatment process. [Figure 8] FIG. 1 is a plan view of an evaporation mask according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0019] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The technical concept of the present invention is not limited to some of the embodiments described, and may be modified to include various embodiments. The present invention may be realized in various forms, and the components of the embodiments may be interchangeable within the scope of the technical concept of the present invention. One or more of these may be selectively combined or substituted for each other. Terms used (including technical and scientific terms) must be clearly and specifically defined and described. Unless otherwise specified, the present invention will be described in accordance with the principles of the present invention. Commonly used terms that can be interpreted as meanings and are predefined terms may interpret its meaning in light of the contextual meaning of the relevant art.

[0020] Furthermore, the terms used in the examples of the present invention are intended to explain the examples, and In this specification, the singular forms "a," "the," and "the" are used unless the phrase specifically states otherwise. It can also include plural forms, and it means "A and (and) at least one of B and C (or one of them)". In the case of "A, B, C", one or more of all possible combinations that can be combined with A, B, and C may include:

[0021] In addition, in describing the components of the present invention, first, second, A, B, (a), (b) Such terms distinguish the component from other components. The terms are merely used to distinguish between the elements, and do not affect the essence, order, or sequence of the elements. Not limited.

[0022] It is also noted that a component is "coupled," "connected," or "connected" to another component. When mounted, the component is not directly connected, coupled, or connected to any other component. Not only when the component is connected to another component, but also when the component is connected to another component. This also includes cases where the two are "connected," "coupled," or "connected."

[0023] It is also noted that each component is formed or placed "above or below" the other. When mounted on a surface, the top or bottom means that the two components are in direct contact with each other. Not only when the two components are connected to each other, but also when one or more other components are formed or placed between the two components. This also includes cases where

[0024] Also, when expressed as "upper" or "lower," it is based on one component. It can also mean a downward direction, not just a direction.

[0025] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, evaporation masks according to the embodiments will be described with reference to the drawings.

[0026] FIG. 1 is a diagram showing an organic vapor deposition apparatus to which a vapor deposition mask 100 according to the embodiment is applied. .

[0027] Referring to FIG. 1, the organic material deposition apparatus 1000 includes a deposition mask 1100, a mask film 1100, and a film forming unit 1100. frame 1200, deposition substrate 1300, organic material deposition vessel 1400, and vacuum chamber 150 May contain 0.

[0028] The deposition mask 1100, the mask frame 1200, the deposition substrate 1300, and The organic material evaporation vessel 1400 may be housed in the vacuum chamber 1500. Therefore, the deposition process through the deposition mask 1100 may be performed in a vacuum atmosphere. .

[0029] The deposition substrate 1300 may be a substrate used in manufacturing a display device. Deposition substrate 1300 can be a substrate for depositing organics for an OLED pixel pattern. On the deposition substrate 1300, red (Red) ), green, and blue organic patterns can be formed. An RGB pattern can be formed on the deposition substrate 1300 .

[0030] The deposition mask 1100 may be disposed on one surface of the deposition substrate 1300. The deposition mask 1100 is used to deposit the organic material on both sides of the deposition substrate 1300. The mask frame 1200 can be placed on the deposition surface to be deposited and fixed by the mask frame 1200.

[0031] As a result, the organic substance passes through the through holes TH formed in the deposition mask 1100. The deposition substrate 1300 is then subjected to a photo-etching process, and organic materials forming an RGB pattern are deposited on the deposition surface of the deposition substrate 1300. It is possible.

[0032] The organic material deposition vessel 1400 may be a crucible. The organic material evaporation vessel 1400 may be disposed in the vacuum chamber 1500. When a heat source and / or an electric current is supplied to the deposition mask, the organic material is vaporized. 1100 and can be deposited on the deposition surface of the deposition substrate 1300.

[0033] 2 and 3 illustrate the positional relationship between the deposition mask 1100 and the deposition substrate 1300. This is a diagram for clarification.

[0034] Referring to FIG. 2, the deposition mask 1100 is disposed on the deposition surface of the deposition substrate 1300. The deposition mask 1100 is placed in contact with the deposition surface of the deposition substrate 1300. It can be done.

[0035] The deposition mask 1100 is a metal plate 100 containing iron and nickel, and has a plurality of through holes TH In particular, the deposition mask 1100 may be formed by forming a mask containing iron and nickel. A plurality of through holes T are formed through an etching process in a metal plate 100 including an Invar alloy. It can be formed by forming H.

[0036] Specifically, the metal plate 100 includes a first surface 101 and a second surface 102 that are opposite to each other. A small hole V1 is formed on the first surface 101 of the metal plate 100. The second surface 102 of the plate 100 may have a large surface hole V2 formed therein.

[0037] The large surface hole V2 is disposed opposite the organic material deposition vessel 1400, thereby The small hole V1 is a region where the deposition material of the organic material deposition container 1400 flows in. This may be the region through which the deposition material flowing in from hole V2 passes.

[0038] The small surface hole V1 and the large surface hole V2 are formed by partially penetrating the metal plate 100. For example, the depth of the small surface hole V1 may be smaller than the depth of the large surface hole V2. The small surface hole V1 and the large surface hole V2 overlap each other in the thickness direction of the metal plate 100. The electrodes may be arranged at positions different from each other and may be formed to communicate with each other.

[0039] As a result, the small surface holes V1 and the large surface holes V2 are formed in the metal plate 100 so as to be in communication with each other. A plurality of through holes TH can be formed.

[0040] The deposition mask 1100 is configured such that the small facet holes V1 of the deposition mask 1100 are aligned with the deposition substrate 1300. The deposition surface of the substrate 1300 may be placed in contact with the deposition surface of the substrate 1300.

[0041] Before forming the through holes TH, the thickness of the metal plate 100 is reduced. A pre-treatment process for surface treatment may be performed. The distribution of stresses remaining inside the metal plate due to the pretreatment process, i.e., tensile stress and compressive stress, The stress distribution changes randomly, causing the metal plate to warp, and the surface of the metal plate The surface corrugations formed by the process can be formed.

[0042] Conventionally, the metal plate 100 is rolled between two rollers to form a roll of the metal plate. The thickness was reduced to a constant thickness, and the surface roughness of the first and second sides of the metal plate was changed. However, since this rolling process is performed in one direction, the markings are not printed in the first and second surface directions of the metal plate. The stress distribution inside the metal plate changes irregularly due to the applied pressure. The metal plate warps in irregular directions due to the uneven distribution of residual stress, and a surface wave is formed on the surface of the metal plate. It was done.

[0043] Such surface corrugation can cause the metal plate to have varying major and minor widths. 3, the surface corrugation determines the size of the short width W1 or long width W2 of the metal plate. The surface corrugation may vary randomly across the width of the metal plate. The size of the metal plate in the direction of the metal plate and the size of the metal plate in the longitudinal direction are randomly changed for each region of the metal plate. That is, the surface corrugation can be used to define the width W1 and the width direction of the metal plate. The size of the width W2 defined as the longitudinal size of the metal plate is determined by dividing the area of ​​the metal plate by the lamination. It can change randomly.

[0044] As a result, the surface waviness formed on the deposition mask 1100 Therefore, when the deposition mask 1100 and the deposition substrate 1300 are brought into contact with each other, as shown in FIG. As a result, the contact surfaces of the deposition mask 1100 and the deposition substrate 1300 are not in complete contact with each other. The surface waviness creates a gap g where the two surfaces do not contact each other in some areas. The distribution and size of such gaps g are determined by the surface corrugation. The more you do this, the larger it can get.

[0045] As a result, the first through holes TH formed in the deposition mask 1100 are In 300, the deposition area may be misaligned, which may cause the deposition process The efficiency of subsequent deposition may be reduced. Also, the thickness of the organic material passing through the deposition area of ​​the metal plate may be increased. This results in uneven thickness of the organic pattern deposited on the deposition substrate. There was a problem.

[0046] Therefore, the following will describe a deposition mask that can solve the above problems. .

[0047] 4 and 5 show pretreatment of the metal plate of the deposition mask according to the embodiment and the inside of the metal plate after the pretreatment. 10A and 10B are diagrams for explaining stress distribution in a portion.

[0048] Referring to FIG. 4, the metal plate 100 is pre-treated before the through holes TH are formed. Such pretreatment is often used to reduce the thickness of the metal plate in order to manufacture a mask for evaporation. This may be a step of increasing the surface roughness of the metal plate.

[0049] The deposition mask according to the present embodiment is formed by etching the first surface 101 or the second surface 102 of the metal plate 100. By etching, the thickness of the metal plate 100 is reduced to a thickness that can be used as a mask for deposition. It can be reduced.

[0050] For example, the deposition mask is formed by etching the second surface 102 of the metal plate. The thickness of the metal plate 100 can be formed to be 30 μm or less. The first surface 101 of the metal plate 100 is the original Invar alloy surface of the metal plate. The second surface 102 may become an etched surface by etching. do.

[0051] Referring to FIG. 4, the metal plate 100 of the deposition mask according to the embodiment is still flexible even after the pretreatment process. It can be seen that the force distribution is maintained uniformly.

[0052] FIG. 4(a) is a cross-sectional view showing the internal stress distribution of a metal plate before the pretreatment process. 4(b) is a cross-sectional view showing the internal stress distribution of the metal plate after the pretreatment process of the metal plate.

[0053] Referring to FIG. 4(a), before the metal plate 100 is pretreated, The inside of the metal plate is subjected to compressive stresses that are symmetrical with respect to the first surface 101 and the second surface 102 of the metal plate. Because of the tensile stress CS and the tensile stress TS, the metal plate 100 remains flat without warping. It can be held.

[0054] That is, the compressive stress CS and the tensile stress TS remaining inside the metal plate 100 Since the amount of the residual stress is symmetrical to each other within the first and second surface directions of the plate 100, The metal plate 100 may be warped in one direction or have a different surface corrugation due to the compressive stress CS and the tensile stress TS. It can maintain a flat state without cracks.

[0055] Next, referring to FIG. 4(b), a step of pretreating the metal plate 100 is performed. In detail, the first surface 101 or the second surface 102 of the metal plate 100 is etched. There may be a process taking place.

[0056] For example, the metal plate 100 is etched from the second surface 102 to the first surface 101. In this way, the thickness of the metal plate 100 can be reduced. The deposition is performed by etching away 10% to 50% of the total thickness. The metal plate 100 can be manufactured to be applied to a mask for use.

[0057] The metal plate 100 is etched to a thickness of less than 10% of the total thickness thereof, or the metal plate 100 is etched to a thickness of less than 10% of the total thickness thereof. When etching is performed to a thickness of more than 50% of the total thickness of the metal plate 100, Since the difference in residual stress between the first and second surfaces of the metal plate is not large, the metal plate can be oriented in the desired direction. It cannot bend in the opposite direction.

[0058] When the metal plate 100 is etched from the second surface 102 to the first surface 101 The compressive stress CS and the tensile stress CS remaining in the direction from the second surface 102 to the first surface 101 The TS may be removed.

[0059] However, since no other force acts in the direction from the first surface 101 to the second surface 102, The compressive stress CS and the tensile stress TS remaining in the direction from the first surface 101 to the second surface 102 The distribution of tensile stress and compressive stress before the pretreatment of the metal plate 100 is maintained as it is. obtain.

[0060] Thus, after the metal plate 100 is pretreated, the stress distribution of the metal plate is The metal plate 100 may be changed compared to before the pretreatment. Afterwards, the compressive stress on the first surface 101 of the metal plate becomes greater than the compressive stress on the second surface. The tensile stress of the second surface 102 may be greater than the tensile stress of the first surface. stomach.

[0061] After the metal plate 100 is pretreated, the compressive stress in the central region CA of the metal plate is , is greater than the compressive stress of the outer region OA of the metal plate, and the tensile stress of the outer region OA is The tensile stress may be greater than that of the central region CA.

[0062] As a result, the metal plate 100 is compressed from the first surface 101 to the second surface 102. and the metal plate has a tensile property from the central region to the outer region. This can happen.

[0063] 5, the metal plate 100 has the first surface 101, the second surface 102, and the 102, according to the distribution of compressive stress and tensile stress in the central area CA and the outer area OA, The metal plate 100 may be warped toward the second surface 102. The metal plate 100 may be warped from the central region toward the second surface 102. The curvature may gradually increase toward the outer region. The plate 100 has a flat central area CA and a curved outer area OA. .

[0064] As a result, the central region of the deposition mask 1100 where the deposition region is arranged has a curvature of 0 The outer area where the deposition area is not located is kept curved. When the deposition mask 1100 and the deposition substrate 1300 are brought into contact with each other, deposition Gaps due to surface corrugations in the area can be minimized.

[0065] On the other hand, since the metal plate 100 is warped in one direction, the first surface 101 of the metal plate is The first surface 101 of the metal plate may have a high point HP and a low point LP. The metal plate 100 may have a highest point HP in the central area CA and a lowest point HP in the outer area OA. May have low point LP.

[0066] At this time, the height difference h between the highest point HP and the lowest point LP may be about 3 μm or less. When the height difference h between the highest point HP and the lowest point LP exceeds 3 μm, The curvature of the first surface 101 is large in the central region, and this allows the deposition mask 1100 and the front When the deposition substrate 1300 is brought into contact with the deposition layer 1300, the deposition layer 1300 is placed in the central region of the metal plate. The gap area where the deposition substrate 1300 is not in contact increases, and deposition efficiency decreases. This sometimes happens.

[0067] On the other hand, the metal plate 100 has a surface roughness of the first surface 101 and a surface roughness of the second surface 102. The length may vary.

[0068] In detail, the etched surface of the metal plate 100 is The surface roughness may be smaller than that of the uncoated surface. When etching the second surface 102 of the metal plate 100, the surface roughness of the first surface 101 is It may be larger than the surface roughness of the second surface 102 .

[0069] In detail, the arithmetic mean roughness (Ra) of the first surface 101 is The ten-point average roughness (Rz) of the first surface 101 may be larger than the ten-point average roughness (Ra). may be greater than the ten-point average roughness (Rz) of the second surface 102.

[0070] For example, the arithmetic mean roughness (Ra) of the first surface of the metal plate in the longitudinal direction is 0.05 μm The arithmetic mean roughness (Ra) in the width direction is 0.05 μm to 0.5 μm. The arithmetic mean roughness (Ra) of the second surface of the metal plate in the longitudinal direction is 0.05 μm. The arithmetic mean roughness (Ra) in the width direction is 0.1 μm to 0.5 μm. obtain.

[0071] That is, as shown in FIG. 6, the first surface has roughness in the longitudinal direction and roughness in the width direction of the metal plate. This may be substantially similar, so that the first surface does not have a texture.

[0072] The ten-point average roughness (Rz) of the first surface in the longitudinal direction of the metal plate is 1.0 μm to 3.0 μm, and the 10-point average roughness (Rz) in the width direction is 1.0 μm to 3.0 μm. The 10-point average roughness (Rz) of the second surface in the longitudinal direction of the metal plate is 0.2 μm. The 10-point average roughness (Rz) in the width direction is 1.0 μm to 3.0 μm. could be.

[0073] That is, as shown in FIG. 7, the second surface has different roughness in the longitudinal direction and the width direction of the metal plate. This can result in the second surface having a textured surface.

[0074] That is, the arithmetic mean roughness (Ra) in the longitudinal direction and the arithmetic mean roughness ( The difference between the arithmetic mean roughness (Ra) in the longitudinal direction and the arithmetic mean roughness (Ra) in the width direction on the second surface is It may be smaller than the difference from the average roughness (Ra).

[0075] In addition, the 10-point average roughness (Rz) in the longitudinal direction and the 10-point average roughness in the width direction on the first surface The difference between the 10-point average roughness (Rz) in the longitudinal direction and the 10-point average roughness (Rz) in the width direction on the second surface is It may be smaller than the difference from the 10-point average roughness Rz.

[0076] As a result, the first surface and the second surface have different surface shapes due to the surface texture. There is a saying.

[0077] As a result, the deposition mask 1100 has a first surface 101 on which the small surface holes V1 are formed. The surface roughness of the second surface 102 is greater than the surface roughness of the second surface 102 on which the large surface hole V2 is formed. It's okay to listen.

[0078] For example, the arithmetic mean roughness (Ra) of the first surface 101 is The thickness (Ra) of the first surface 101 may be 1.2 to 1.65 times. The average roughness (Rz) is 1.2 to 1.0 times the 10-point average roughness (Rz) of the second surface 102. It could be .65 times.

[0079] The arithmetic mean roughness (Ra) or ten-point mean roughness (Rz) of the first surface 101 is More than 1.65 times the arithmetic mean roughness (Ra) or 10-point mean roughness (Rz) of surface 102 In this case, the difference in surface roughness between the first surface 101 and the second surface 102 causes the first surface 1 The difference in adhesion strength between the photoresist on the first surface 101 and the second surface 102 increases. The etching uniformity of the second surface 102 may be reduced.

[0080] Hereinafter, with reference to FIG. 8, a deposition mask to which the above-described pretreated metal plate is applied will be described. I will explain.

[0081] FIG. 8 is a plan view of an evaporation mask according to an example.

[0082] Referring to FIG. 8, the deposition mask 1100 according to the embodiment has a deposition area DA and a non-deposition area DA. This may include a regional NDA.

[0083] The deposition area DA may be an area for forming a deposition pattern. A deposition material can be deposited on a deposition substrate through the region DA via the deposition mask.

[0084] The deposition mask 1100 can include a plurality of deposition regions DA. The deposition area DA may include an effective portion and an ineffective portion. A plurality of effective portions and through holes are formed to form a deposition pattern. The effective portion may include a non-effective portion UA ​​that is not formed by the through holes TH. can be formed.

[0085] The plurality of effective portions include a first effective portion AA1, a second effective portion AA2, and a third effective portion AA3. and may be separated from each other by isolation regions IA1, IA2.

[0086] In the case of a small display device such as a smartphone, a plurality of vapor deposition masks included in the deposition mask 1100 are used. Any one effective portion of the attachment area may be used to form one display device. In the case of a large display device such as a television, multiple masks included in one deposition mask 1100 may be used. A number of effective portions can be part of forming one display device. The deposition mask 1100 can include a plurality of effective portions, and can simultaneously form a plurality of display devices. Therefore, the deposition mask 1100 according to the embodiment can improve the process efficiency. It can be done.

[0087] The non-deposition areas NDA may be arranged on both sides of the deposition area DA in the longitudinal direction. The non-deposition area NDA may be arranged outside the deposition area DA in the longitudinal direction.

[0088] The non-deposition area NDA may be an area that is not involved in deposition. a frame fixing region for fixing the deposition mask 1100 to a mask frame 1200; The non-deposition area NDA may include areas FA1 and FA2. The openings HF1 and HF2, the openings OA1 and OA2, and the protruding portions PA1 and PA2 are included. can be done.

[0089] The deposition area DA and the non-deposition area NDA are the central area C of the metal plate 100 described above. A and the outer area OA may correspond to the positions of the deposition area DA and the outer area OA, respectively. The non-deposited area NDA may correspond to the central area CA of the metal plate 100. It may correspond to the outer area OA of the plate 100 .

[0090] As a result, the deposition mask 1100 has a flat deposition area DA and a non-deposition area DA. In particular, both ends of the deposition mask 1100 may be warped. In particular, both ends of the deposition mask 1100 may be warped toward the large surface hole. That is, the deposition mask 1100 has a structure in which the deposition area DA is separated from the non-deposition area N. While extending in the DA direction, the curve may be warped in the direction of the large surface hole so that the curvature gradually increases.

[0091] As a result, the deposition area DA of the deposition mask 1100 is flat with a curvature close to 0. The shape of the deposition mask is maintained so that the non-deposition area NDA is warped. When the deposition mask 1100 and the deposition substrate 1300 are brought into contact with each other, the deposition area and the front The phenomenon of the deposition substrate 1300 floating up can be minimized.

[0092] The deposition mask according to the embodiment can control the residual stress inside the deposition mask. In detail, the deposition mask according to the embodiment has compressive stress and The distribution and magnitude of the tensile stress can be controlled.

[0093] As a result, the deposition mask according to the embodiment can control warpage of the deposition mask. That is, the deposition mask according to the embodiment can be formed by adjusting the warp direction, warp position, The degree of warping can be controlled.

[0094] This allows the deposition area of ​​the deposition mask to be kept flat with a curvature close to zero, and the non-deposition area to be The deposition area can be maintained to have a greater curvature than the deposition area.

[0095] Therefore, when the deposition mask and the deposition substrate are brought into contact with each other, Lifting of the deposition region and the deposition substrate can be minimized.

[0096] As a result, the deposition mask according to the embodiment has a gap between the deposition mask and the deposition substrate. Minimize the gap and the resulting unevenness of the deposition thickness, improving deposition efficiency. It is possible.

[0097] After forming the deposition mask, the deposition mask is subjected to a surface corrugation treatment. The separate tensioning step can be omitted.

[0098] The features, structures, effects, etc. described in the above-described embodiments are intended to be illustrative and not restrictive of the present invention. The examples are included in the present specification and are not necessarily limited to only one embodiment. The features, structures, effects, etc. illustrated in the examples are not intended to be limiting unless one skilled in the art has ordinary skill in the art to which the examples pertain. It can be combined or modified with other embodiments by those skilled in the art. Therefore, all such combinations and modifications are to be construed as being within the scope of the present invention. should be.

[0099] Although the above description has been centered on the embodiments, these are merely examples and do not limit the present invention. It is understood that those skilled in the art will be able to understand the essence of the present embodiment. Various modifications and applications not exemplified above are possible within the scope of the basic characteristics. For example, each component specifically shown in the embodiment may be modified and implemented. The differences related to such modifications and applications are described in the attached It should be construed as being within the scope of the present invention as defined in the claims.

Claims

1. a metal plate including an iron-nickel alloy and including a first surface and a second surface opposite the first surface; fruit, The metal plate is a through hole including a small-surface hole on a first surface of the metal plate and a large-surface hole on the second surface; The compressive stress of the first surface is greater than the compressive stress of the second surface; the tensile stress of the second surface is greater than the tensile stress of the first surface; an end of the metal plate warps in the direction of the second surface; a height difference between the highest point and the lowest point of the first surface being 3 μm or less;

2. the compressive stress in the central region of the metal plate is greater than the compressive stress in the outer region of the metal plate; The tensile stress of the outer region is greater than the tensile stress of the central region. Evaporation mask.

3. 2. The method according to claim 1, wherein the arithmetic mean roughness of the first surface is greater than the arithmetic mean roughness of the second surface. The deposition mask shown.

4. 2. The method of claim 1, wherein the first surface has a ten-point average roughness greater than the second surface. The evaporation mask according to claim 1.

5. 10. The metal plate of claim 1, wherein the curvature increases from a central region to an outer region of the metal plate. The evaporation mask according to claim 1.

6. the metal plate includes a vapor-deposited region and a non-vapor-deposited region disposed outside the vapor-deposited region; the small-surfaced hole and the large-surfaced hole are disposed in the deposition region; 10. The deposition mask of claim 1, wherein the curvature increases from the deposition region to the non-deposition region. School.

7. The difference between the arithmetic mean roughness in the longitudinal direction and the arithmetic mean roughness in the width direction on the first surface is The difference between the arithmetic mean roughness in the longitudinal direction and the arithmetic mean roughness in the width direction on the two surfaces is smaller than the difference between the arithmetic mean roughness in the longitudinal direction and the arithmetic mean roughness in the width direction on the two surfaces. Item 2. The evaporation mask according to item 1.

8. The difference between the 10-point average roughness in the longitudinal direction and the 10-point average roughness in the width direction on the first surface is The difference between the 10-point average roughness in the longitudinal direction and the 10-point average roughness in the width direction on the second surface is smaller than the difference The evaporation mask according to claim 1 .

9. The arithmetic mean roughness (Ra) of the first surface in the longitudinal direction of the metal plate is 0.05 μm to 0.5 μm. m, and the arithmetic mean roughness (Ra) in the width direction is 0.05 μm to 0.5 μm, The arithmetic mean roughness (Ra) of the second surface in the longitudinal direction of the metal plate is 0.05 μm to 0.2 μm. m, and the arithmetic mean roughness (Ra) in the width direction is 0.1 μm to 0.5 μm, The ten-point average roughness (Rz) of the first surface in the longitudinal direction of the metal plate is 1.0 μm to 3.0 μm m, and the 10-point average roughness (Rz) in the width direction is 1.0 μm to 3.0 μm, The ten-point average roughness (Rz) of the second surface in the longitudinal direction of the metal plate is 0.2 μm to 1.0 μm 1, wherein the arithmetic mean roughness (Ra) in the width direction is 1.0 μm to 3.0 μm. The deposition mask described above.

10. The large holes are regions into which the deposition material flows, and the small holes are regions into which the deposition material flows from the large holes.

2. The deposition mask according to claim 1, wherein the deposition material passes through the deposition mask.

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