Display panel manufacturing apparatus

Abstract

To provide a display panel manufacturing apparatus capable of promptly and accurately detecting the vapor deposition thickness and refractive index of a thin film vapor-deposited on a transparent insulation substrate, a hydrogen concentration in the thin film and the like in real time.SOLUTION: A display panel manufacturing apparatus includes: a thin film deposition apparatus for depositing a thin film on a manufacturing substrate; and a thin film characteristic detection device for analyzing the spectrum of light emitted during the thin film vapor deposition process in the thin film deposition apparatus to create optical radiation spectral data and analyzing the optical radiation spectral data in real time to detect information on the characteristics of the thin film deposited on the manufacturing substrate. The thin film characteristic detection device can analyze light wavelength distribution, light intensity distribution and information on a plurality of plasma characteristics from the optical radiation spectral data to detect the information on the characteristics of the thin film including the hydrogen concentration of the thin film deposited on the manufacturing substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a display panel manufacturing apparatus. [Background technology]

[0002] With the development of an information society, the demands for display devices for displaying images are becoming increasingly diverse. For example, display devices are applied to a variety of electronic devices such as smartphones, notebook computers, navigation systems, and smart TVs.

[0003] The display device may be a flat panel display device such as an organic light emitting display device using an organic light emitting diode, a quantum dot light emitting display device including a quantum dot light emitting layer, an inorganic light emitting display device including an inorganic semiconductor, and a micro light emitting display device using a micro or nano light emitting diode.

[0004] Manufacturing a display panel for a display device requires a process of depositing and patterning a photoresist or an organic or inorganic insulating material on a transparent insulating substrate such as silicon or glass. In particular, after depositing a thin film on the insulating substrate, an inspection process is performed to check whether the deposited film has been formed to a target thickness. For this purpose, a process of measuring the thickness of the deposited thin film must be performed using separate measuring equipment.

[0005] Since several deposition processes are performed to manufacture a display panel, the process of measuring the thickness of the thin film formed on the substrate must be performed several times, which delays the manufacturing process time of the display panel and reduces the efficiency of the deposition process. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent Registration No. 2437091 Summary of the Invention [Problem to be solved by the invention]

[0007] The problem to be solved by the present invention is to provide a display panel manufacturing apparatus that can quickly and accurately detect the deposition thickness, refractive index, and hydrogen concentration in a thin film deposited on a transparent insulating substrate (hereinafter referred to as a manufacturing substrate) in real time.

[0008] In particular, the present invention provides a display panel manufacturing apparatus that can detect and analyze optical emission spectroscopic data in real time during a thin film deposition process to check plasma characteristics and thin film deposition characteristics, and can correct the thin film deposition process in real time.

[0009] The objectives of the present invention are not limited to those mentioned above, and other technical objectives not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0010] According to an embodiment, a display panel manufacturing apparatus includes a thin film deposition apparatus that forms a thin film on a manufacturing substrate; and a thin film characteristic detection device that analyzes the spectrum of light emitted during a thin film deposition process of the thin film deposition apparatus to generate optical radiation spectroscopic data and analyzes the optical radiation spectroscopic data in real time to detect thin film characteristic information formed on the manufacturing substrate, wherein the thin film characteristic detection device analyzes the light wavelength distribution, light intensity distribution, and multiple pieces of plasma characteristic information from the optical radiation spectroscopic data to detect the thin film characteristic information including the hydrogen concentration of the thin film formed on the manufacturing substrate.

[0011] In addition, an apparatus for manufacturing a display panel according to an embodiment includes: a thin film deposition apparatus for forming a thin film on a manufacturing substrate; and a thin film characteristic detection device for analyzing a spectrum of light emitted during a thin film deposition process of the thin film deposition apparatus to generate optical radiation spectroscopic data and analyzing the optical radiation spectroscopic data in real time to detect characteristic information of a thin film formed on the manufacturing substrate. The thin film characteristic detection device includes: an optical sensitivity detection module for generating the optical radiation spectroscopic data based on a wavelength distribution and a light intensity distribution for each wavelength band of plasma light emitted from inside a chamber of the thin film deposition apparatus; and an optical data analysis device for analyzing the light wavelength distribution, the light intensity distribution, and a plurality of pieces of plasma characteristic information from the optical radiation spectroscopic data and detecting at least one of deposition thickness information, refractive index information, and hydrogen concentration information of the thin film formed on the manufacturing substrate using a predetermined arithmetic formula. [Effects of the Invention]

[0012] According to the display panel manufacturing apparatus of the embodiment, a thin film can be formed accurately to a target thickness by detecting in real time the deposition thickness, refractive index, and hydrogen concentration characteristics of the thin film deposited on the manufacturing substrate, thereby simplifying the display panel manufacturing process and reducing manufacturing costs.

[0013] Furthermore, by checking plasma characteristics and thin film deposition characteristics in real time and correcting the thin film deposition process in real time based on the checked data, the accuracy and reliability of the display panel manufacturing process can be improved.

[0014] The effects of the embodiments are not limited to the above examples, and a wider variety of effects are included in this specification. [Brief explanation of the drawings]

[0015] [Figure 1] 1 is a cross-sectional view showing a manufacturing apparatus for a display panel according to an embodiment of the present invention; [Figure 2]FIG. 2 is a block diagram showing the configuration of the optical data analysis device shown in FIG. [Figure 3] 10 is a flowchart specifically illustrating a thin film characteristic detection process of the thin film characteristic detection device. [Figure 4] 1 is a graph showing a thin film measurement result analysis for explaining a thin film characteristic analysis and detection method. [Figure 5] 1 is a graph showing a thin film measurement result analysis for explaining a thin film characteristic analysis and detection method. DETAILED DESCRIPTION OF THE INVENTION

[0016] Hereinafter, specific embodiments will be described with reference to the accompanying drawings.

[0017] FIG. 1 is a cross-sectional view showing the configuration of a display panel manufacturing apparatus according to one embodiment of the present invention.

[0018] Referring to FIG. 1, a display panel manufacturing apparatus includes a thin film deposition apparatus 100 for forming a thin film on a transparent insulating substrate (hereinafter referred to as a manufacturing substrate 10), and a thin film characteristic detection apparatus 200 for detecting characteristic information of the thin film formed on the manufacturing substrate 10 in real time.

[0019] The thin film deposition apparatus 100 forms a thin film of photoresist or organic or inorganic insulating material on a substrate 10 made of silicon or glass.

[0020] The thin film deposition apparatus 100 may include a chemical vapor deposition device or apparatus for performing a plasma-enhanced chemical vapor deposition (PECVD) process. Specifically, the thin film deposition apparatus 100 includes a chamber CAM, a loading plate 120, a gas supplier 150, and a plasma process controller 160.

[0021] The chamber CAM of the thin film deposition apparatus 100 forms a space where a chemical vapor deposition process is performed. The chamber CAM is a PECVD process chamber that provides a process space with vacuum, heating, soundproofing, cooling, vibration-free, waterproofing, etc. To this end, a vacuum device, air suction device, purification device, heating device, cooling device, etc. may be installed inside and outside the chamber CAM.

[0022] The loading plate 120 is disposed in the interior space of the chamber CAM and fixes the substrate 10 to be manufactured placed on the front surface of the loading plate 120. The loading plate 120 may include a heat generating member, an adsorption member, an alignment mark, and the like.

[0023] The gas supplier 150 supplies a deposition source gas and a carrier gas to the interior space of the chamber CAM. The deposition source gas is a gas containing photoresist or an organic or inorganic insulating material, which is formed as a thin film on the manufacturing substrate 10 through a plasma processing process. For example, the deposition source gas may contain a silane-based gas and oxygen (O2), thereby forming a silicon oxide film on the manufacturing substrate 10 through a plasma process. The carrier gas may include an inert gas such as helium (He) gas or argon (Ar) gas.

[0024] The plasma process controller 160 applies a high frequency power supply to the chamber CAM to activate the deposition source gas and carrier gas into a plasma state, and controls the plasma deposition process by setting the high frequency power level and process time. In particular, the plasma process controller 160 controls the plasma deposition process in real time by setting and changing thin film deposition process condition information, such as the pressure in the chamber CAM, the temperature in the chamber CAM, the flow rate of each gas, and high frequency power condition information. The plasma process controller 160 shares thin film deposition process condition information and control information, which are set in advance or changed in real time, with the thin film characteristic detection device 200.

[0025] The thin film characteristic detecting device 200 generates optical emission spectroscopic data by analyzing the spectrum of light emitted during the thin film deposition process of the thin film deposition device 100. The device then analyzes the optical emission spectroscopic data to detect, in real time, characteristic information of the thin film formed on the manufacturing substrate 10. In particular, the device 200 analyzes the wavelength distribution, intensity distribution, and plasma characteristic information of the light from the optical emission spectroscopic data to detect, in real time, the deposition thickness, refractive index, and hydrogen concentration information of the thin film formed on the manufacturing substrate 10.

[0026] The deposition process using plasma involves repeated radical generation reactions and thin film deposition reactions. In plasma deposition processes, the radical generation reaction proceeds relatively slowly compared to the thin film deposition reaction, so the radical generation reaction rate is the dominant factor in determining the film deposition rate. However, the dominant factor in determining the film deposition rate may vary depending on the type of thin film being deposited and the thin film deposition method. Therefore, the thin film deposition rate can be calculated using the radical generation reaction rate, which has the greatest effect on the thin film deposition rate.

[0027] During the deposition process, excitation and relaxation of activated states occur continuously due to plasma discharge. The plasma also emits light. The wavelength and intensity of the emitted light are related to the progress and environment of the deposition process. Therefore, the thin film characteristic detection device 200 measures optical emission spectroscopy data including the light intensity distribution by wavelength to detect the progress of the plasma deposition process.

[0028] The thin film characteristic detection device 200 analyzes the spectrum of light emitted during the thin film deposition process of the thin film deposition device 100 and detects the light intensity for each wavelength of the dispersed light. It then generates optical emission spectrum data of the plasma according to the light intensity distribution for each wavelength of the inert gas. The optical emission spectrum data calculated in real time serves as basic data for measuring the thickness, refractive index, and hydrogen concentration of the deposited thin film in real time.

[0029] Specifically, the thin film characteristic detecting device 200 checks information on changes in plasma characteristics during the plasma deposition process, such as information on changes in the temperature characteristics of the inert gas and information on changes in the molecular temperature characteristics of the inert gas, etc. Then, by calculating the optical emission spectroscopy data of the plasma and the information on changes in plasma characteristics using a preset hydrogen concentration detection calculation formula, the hydrogen concentration of the deposited thin film can be measured in real time.

[0030] Meanwhile, in a plasma deposition process, optical radiation spectroscopy data at a wavelength corresponding to an inert gas is proportional to the radical generation reaction rate. Furthermore, optical radiation spectroscopy data at a wavelength corresponding to an inert gas is proportional to the plasma excitation rate and plasma concentration. Because the radical generation reaction rate has a significant influence on the thin film deposition rate, optical radiation spectroscopy data of an inert gas is used as basic data for measuring the thin film deposition rate and deposition thickness. The thin film deposition rate, depending on the plasma deposition process conditions, may be predominantly influenced by the deposition source gas or by the deposition source gas and the inert gas separately. Therefore, optical radiation spectroscopy data for the deposition source gas can be detected and used to calculate the thin film deposition rate and deposition thickness. In particular, the thin film characteristic detection device 200 can measure the thickness of a deposited thin film in real time by calculating the plasma optical radiation spectroscopy data, temperature characteristic change information of the inert gas, and deposition environment information such as the temperature and pressure in the chamber CAM using a preset thin film thickness detection equation. Furthermore, the refractive index of the thin film can be determined based on the thin film material information and thickness information, and data including the thickness distribution information and thickness uniformity information can be generated.

[0031] Referring to FIG. 1, the thin film property detection device 200 includes a full-range spectroscopy module 210, a diffraction module 220, an incident light filter module 230, a light sensitivity detection module 240, and an optical data analysis device 250 as components for analyzing the spectrum of light emitted during the plasma deposition process and generating optical emission spectroscopy data.

[0032] The full-spectrum spectroscopic module 210 captures plasma particles emitted from the inside of the chamber CAM of the thin film deposition apparatus 100 and disperses and refracts them according to spectral wavelength bands. For example, the full-spectrum spectroscopic module 210 may include a lens module combining at least one concave lens and a convex lens, and at least one prism lens that refracts and outputs light of each wavelength band at a predetermined angle.

[0033] The diffraction module 220 reflects the light of the spectral wavelength band refracted by the full-spectroscopic module 210 at a predetermined reflection angle according to the incident angle. The diffraction module 220 may be formed as a flat plate arranged to form a predetermined inclination and reflection angle, an antenna-type plate with a concave reflection surface, or a concave hemispherical disk or plate.

[0034] The incident light filter module 230 bandpass filters the light in the spectral wavelength band reflected by the diffraction module 220 into a predetermined wavelength band. The incident light filter module 230 may include a plurality of bandpass filters that filter light in the predetermined wavelength band.

[0035] The optical sensitivity detection module 240 generates optical emission spectroscopy data based on the wavelength distribution and light intensity distribution for each wavelength band of the plasma light incident through the incident light filter module 230. The optical sensitivity detection module 240 may include at least one optical emission spectroscopy. As described above, the optical sensitivity detection module 240 may generate optical emission spectroscopy data by dispersing light emitted from the inert gas and measuring and aligning the light intensity for each wavelength of the dispersed light.

[0036] The optical data analyzer 250 analyzes the wavelength distribution of light, the intensity distribution of light, and a plurality of pieces of plasma characteristic information from the optical emission spectroscopic data, and detects at least one piece of thin film characteristic information from among deposition thickness information, refractive index information, and hydrogen concentration information of the thin film formed on the production substrate 10 in real time using the optical characteristic information and plasma characteristic information analyzed from the optical emission spectroscopic data and a preset arithmetic expression.

[0037] FIG. 2 is a block diagram showing the configuration of the optical data analysis device shown in FIG.

[0038] Referring to FIG. 2, the optical data analysis device 250 includes a spectroscopic data input unit 251 , a plasma characteristic extraction unit 252 , a hydrogen concentration detection unit 253 , and a deposited film characteristic detection unit 254 .

[0039] The spectroscopic data input unit 251 receives optical emission spectroscopic data in real time from the photosensitivity detection module 240 and stores it in a preset memory. The stored optical emission spectroscopic data is then shared with the plasma characteristic extraction unit 252 and the like.

[0040] The plasma characteristic extraction unit 252 analyzes and digitizes light wavelength distribution information and light intensity distribution information from the optical emission spectroscopy data. The light intensity generated by the main radicals contributing to the deposition process can be aligned with time and space to confirm light intensity distribution information. The plasma characteristic extraction unit 252 can then identify the light intensity distribution and the light wavelength distribution, which is aligned with wavelength changes aligned with intensity over time. The plasma characteristic extraction unit 252 also detects multiple pieces of plasma characteristic information, such as inert gas temperature characteristic change information and inert gas molecular temperature characteristic change information, from the optical emission spectroscopy data.

[0041] The plasma characteristic extraction unit 252 reads from a memory or the like and stores reference temperature information corresponding to light intensity information relative to the magnitude of vibrational energy in advance. It then checks the vibrational energy changes detected from the carrier gas and checks the changes in the light intensity distribution corresponding to the changes in the vibrational energy magnitude. The plasma characteristic extraction unit 252 can extract temperature information of the inert gas in real time using the reference temperature information corresponding to the vibrational energy magnitude and light intensity information detected from the carrier gas in real time.

[0042] The plasma characteristic extraction unit 252 reads from a memory or the like and stores in advance information on rotational vibrational energy distribution for each wavelength band and molecular temperature information for each wavelength band for the carrier gas used in the deposition process according to the type of carrier gas. Therefore, the plasma characteristic extraction unit 252 checks changes in vibrational energy detected from the carrier gas in real time, detects wavelength bands corresponding to the changes in the vibrational energy, and can then check and extract molecular temperatures according to the corresponding wavelength bands.

[0043] The hydrogen concentration detector 253 measures the hydrogen concentration of the thin film to be deposited in real time by calculating the optical emission spectroscopic data of the plasma and a plurality of pieces of plasma characteristic information using a preset hydrogen concentration detection calculation formula.

[0044] The hydrogen concentration detection calculation formula is set and saved in advance as follows.

[0045] [Hydrogen concentration detection formula] HIC(hp) = [Int.A] n ×[Int.B] m ×EXP (-ke / Te) ×EXP (-kg / Tg)

[0046] Here, HIC(hp) is the hydrogen concentration, Int. A is the optical property (e.g., light intensity or detection wavelength) detected from the optical emission spectroscopy data of the first deposition source gas, and Int. B is the optical property (e.g., light intensity or detection wavelength) detected from the optical emission spectroscopy data of the second deposition source gas.

[0047] Also, n is a preset first concentration weighting value, m is a preset second concentration weighting value, Tg is a first plasma characteristic factor (e.g., the temperature of the inert gas), and Te is a second plasma characteristic factor (e.g., the molecular temperature of the inert gas). Here, ke may be a preset first energy weighting value (e.g., the vibration energy weighting value), and kg may be a preset second energy weighting value (e.g., the vibration energy weighting value).

[0048] The deposition film characteristic detecting unit 254 calculates deposition environment information, including temperature information and pressure information within the chamber CAM, and a plurality of plasma characteristic information using a preset thin film thickness detection formula to measure the thickness information of the thin film to be deposited in real time. For example, the deposition film characteristic detecting unit 254 first detects the deposition rate of the thin film using the temperature information and pressure information within the chamber CAM, optical characteristics (e.g., light intensity characteristics) detected from the optical radiation spectroscopic data of the first deposition source gas, and a deposition rate detection formula.

[0049] The thin film deposition rate detection formula is set and stored in advance as follows:

[0050] [Deposition rate detection formula] THL(T_S)=k(p,T,...)[Int.A]

[0051] Here, THL(T_S) is the deposition rate information of the thin film, p is the pressure of the chamber CAM, T is the temperature in the chamber CAM, and Int.A is the optical property (e.g., light intensity) information detected from the optical emission spectroscopy data of the first deposition source gas.

[0052] By integrating the thin film deposition rate detection equation with respect to time, the thin film thickness detection equation can be derived.

[0053] The thin film thickness detection formula is preset and stored as follows:

[0054]

number

[0055] Here, THL(th) is the calculated thickness value of the thin film, and k may be a constant including 1. In addition, the deposition film characteristic detection unit 254 can determine the refractive index of the thin film based on the material information and thickness information of the thin film, and generate data including information on the thickness distribution and thickness uniformity of the thin film.

[0056] FIG. 3 is a flowchart specifically showing the thin film characteristic detection process of the thin film characteristic detection device.

[0057] 3, the plasma process controller 160 applies a high frequency power source to the chamber CAM to activate the deposition source gas and carrier gas into a plasma state, and controls the plasma deposition process by setting the high frequency power and process time. In particular, the plasma process controller 160 controls the plasma deposition process in real time by setting and varying thin film deposition process condition information, such as the pressure in the chamber CAM, the temperature in the chamber CAM, the flow rate of each gas, and high frequency power condition information. In addition, the thin film characteristic detector 200 generates optical emission spectrum data by analyzing the spectrum of light emitted during the thin film deposition process of the thin film deposition apparatus 100 (SS1).

[0058] Next, the plasma characteristic extraction unit 252 of the thin film characteristic detection device 200 detects the light intensity distribution information by aligning the light intensity generated by the main radicals contributing to the deposition process based on time and space, and detects the light wavelength distribution by aligning the light intensity distribution and wavelength change based on the intensity against time (SS2).

[0059] The plasma characteristic extraction unit 252 also extracts temperature information of the inert gas in real time using reference temperature information corresponding to the magnitude of vibrational energy detected from the carrier gas in real time and light intensity information. Next, the plasma characteristic extraction unit 252 checks changes in the vibrational energy detected from the carrier gas in real time and detects a wavelength band corresponding to the change in the magnitude of the vibrational energy. Then, the plasma characteristic extraction unit 252 checks and extracts the molecular temperature according to the corresponding wavelength band (SS3).

[0060] Next, the plasma characteristic extraction unit 252 measures the hydrogen concentration of the thin film in real time while plasma deposition is being performed using the hydrogen concentration detection calculation formula. In particular, the plasma characteristic extraction unit 252 can measure the hydrogen concentration of the thin film in real time by substituting the temperature characteristics of the inert gas and the molecular temperature characteristics of the inert gas into the hydrogen concentration detection calculation formula (SS4).

[0061] Next, the plasma characteristic extraction unit 252 first detects thin film deposition rate information using a thin film deposition rate detection equation in order to detect thin film thickness information, which is one of the thin film characteristic factors, in real time. Then, the thin film deposition rate detection equation is integrated with respect to time to derive a thin film thickness detection equation. The thin film thickness information is detected in real time using the thin film thickness detection equation as shown in Table 1 below (SS5).

[0062] [Table 1]

[0063] Here, the OES intensity can be the intensity of light detected from the optical emission spectroscopy data of the first deposition source gas.

[0064] The deposited film characteristic detection unit 254 then compares the thin film material information and thickness information with reference refractive index information for the thickness of the material to confirm the refractive index of the thin film. The refractive index change and distribution for each position in the thin film are then converted into data in the form of a planar distribution or graph to calculate the thickness distribution information of the thin film and the thickness uniformity information according to the refractive index change. Therefore, characteristic data information including the thickness distribution information of the thin film and the thickness uniformity information according to the refractive index change can be generated (SS6).

[0065] FIG. 4 is a graph showing the analysis of thin film measurement results to explain the thin film characteristic analysis and detection method.

[0066] Referring to FIG. 4, a silicon oxide film can be deposited in the chamber CAM using a silane-based gas and oxygen as the first and second deposition source gases and helium as the inert gas. In this case, the optical intensity distribution value (OSE) for each sampled detection position (SIMS), or the vibrational energy change for each sampled detection position (SIMS) relative to the optical intensity value, or the temperature of the ionized molecules can be confirmed. A correction value (R) for matching the optical intensity distribution value (OSE) for each sampled detection position (SIMS) to the temperature of the ionized molecules can be calculated. 2 ) can be set in advance according to experimental values. As shown in Fig. 4, the hydrogen concentration detection unit 253 can detect the molecular temperature of the inert gas and apply it to the hydrogen concentration detection calculation formula as a second plasma characteristic factor.

[0067] FIG. 5 is a graph showing the analysis of thin film measurement results to explain the thin film characteristic analysis and detection method.

[0068] Referring to Figure 5, a silicon oxide film can be deposited in the chamber CAM using silane-based gas and oxygen as the first and second deposition source gases and helium as the inert gas. In this case, the optical intensity distribution (OSE) value at each light detection position for each sampled thin film material (TDS) or the deposition temperature change for each sampled thin film material (TDS) relative to the optical intensity value can be confirmed, or the ionized molecule temperature can be confirmed. A correction value (R 2 ) can be set in advance according to experimental values. As shown in Fig. 5, the hydrogen concentration detection unit 253 detects the real-time temperature or molecular temperature of the inert gas and can apply it to the hydrogen concentration detection calculation formula as the first or second plasma characteristic factor.

[0069] The display panel manufacturing apparatus according to the above-described embodiment can accurately form a thin film of a target thickness by detecting in real time the deposition thickness, refractive index, and hydrogen concentration characteristics of the thin film deposited on the manufacturing substrate 10. This simplifies the manufacturing process of the display panel and reduces manufacturing costs.

[0070] Furthermore, the plasma characteristics and thin film deposition characteristics can be checked in real time, and the thin film deposition process can be corrected in real time based on the checked data, thereby improving the accuracy and reliability of the display panel manufacturing process.

Claims

1. a thin film deposition apparatus for forming a thin film on a manufacturing substrate; a thin film characteristic detection device that analyzes a spectrum of light emitted during a thin film deposition process of the thin film deposition device to generate optical radiation spectroscopic data, and analyzes the optical radiation spectroscopic data in real time to detect thin film characteristic information formed on the manufacturing substrate, The thin film characteristic detection device analyzes the wavelength distribution of light, the intensity distribution of light, and multiple pieces of plasma characteristic information from the optical emission spectroscopic data to detect the thin film characteristic information including the hydrogen concentration of the thin film formed on the manufacturing substrate.

2. The thin film deposition apparatus is a chamber forming a space for carrying out a chemical vapor deposition process; a loading plate disposed in the interior space of the chamber and configured to place and fix the manufacturing substrate thereon; a gas supplier for supplying a deposition source gas and a carrier gas to the inner space of the chamber; 2. The display panel manufacturing apparatus of claim 1, further comprising: a plasma process controller for applying a high frequency power source to the inside of the chamber and controlling a plasma deposition process.

3. The thin film characteristic detection device includes: a full-range spectroscopic module for dispersing and refracting plasma light emitted from the chamber of the thin film deposition device according to a spectral wavelength band; a diffraction module that reflects the light in the spectral wavelength band refracted by the full-spectrum spectroscopic module; an incident light filter module that bandpass filters the light in the spectral wavelength band reflected by the diffraction module into a predetermined wavelength band; a photosensitivity detection module that generates the optical radiation spectrum data based on a wavelength distribution and an intensity distribution of the light filtered by the incident light filter module; 2. The display panel manufacturing apparatus according to claim 1, further comprising: an optical data analysis device that analyzes the wavelength distribution of light, the intensity distribution of light, and a plurality of pieces of plasma characteristic information from the optical emission spectrum data, and detects at least one of the thin film characteristic information among deposition thickness information, refractive index information, and hydrogen concentration information of the thin film formed on the manufacturing substrate using a preset arithmetic expression.

4. The optical data analysis device a plasma characteristic extraction unit that detects a plurality of plasma characteristic information including a wavelength distribution of light, an intensity distribution of light, temperature characteristic change information of the inert gas, and molecular temperature characteristic change information of the inert gas from the optical emission spectrum data; a hydrogen concentration detection unit that measures the hydrogen concentration of the thin film to be deposited in real time by calculating the optical emission spectroscopic data and the plurality of pieces of plasma characteristic information using a preset hydrogen concentration detection calculation formula; 4. The display panel manufacturing apparatus according to claim 3, further comprising a deposition film characteristic detection unit that calculates deposition environment information including temperature information and pressure information in the chamber and the plurality of plasma characteristic information using a preset thin film thickness detection calculation formula to measure thickness information of the thin film being deposited in real time.

5. The thin film characteristic detection device includes: a photosensitivity detection module that generates the optical emission spectrum data based on a wavelength distribution and an intensity distribution of the plasma light emitted from the chamber of the thin film deposition device; 2. The display panel manufacturing apparatus according to claim 1, further comprising: an optical data analysis device that analyzes the wavelength distribution of light, the intensity distribution of light, and a plurality of pieces of plasma characteristic information from the optical emission spectrum data, and detects at least one of the thin film characteristic information among deposition thickness information, refractive index information, and hydrogen concentration information of the thin film formed on the manufacturing substrate using a preset arithmetic expression.

6. The optical data analysis device detecting a plurality of plasma characteristic information including a wavelength distribution of light, an intensity distribution of light, temperature characteristic change information of the inert gas, and molecular temperature characteristic change information of the inert gas from the optical emission spectrum data; calculating the optical emission spectroscopic data and the plurality of pieces of plasma characteristic information using a preset hydrogen concentration detection calculation formula to measure the hydrogen concentration of the thin film being deposited in real time; 6. The display panel manufacturing apparatus according to claim 5, wherein the apparatus calculates deposition environment information including temperature information and pressure information in the chamber and a plurality of plasma characteristic information using a preset thin film thickness detection formula to measure thickness information of the thin film being deposited in real time.

7. The hydrogen concentration detection calculation formula is HIC(hp)=[Int. A] ｎ × [Int. B] ｍ ×EXP （－ｋｅ／Ｔｅ） ×EXP （－ｋｇ／Ｔｇ） and HIC(hp) is the hydrogen concentration, Int. A is the intensity or wavelength of light detected from the optical emission spectroscopy data of the first deposition source gas; Int. B is the intensity or wavelength of light detected from the optical emission spectroscopy data of the second deposition source gas; n is a preset first density weight value, m is a preset second density weight value, Tg is the temperature of the inert gas, which is the first plasma characteristic factor; Te is the molecular temperature of the inert gas, which is the second plasma characteristic factor, ke is a preset first vibration energy weighting value, The display panel manufacturing apparatus of claim 6 , wherein the kg is a preset second vibration energy weight value.

8. the optical data analysis device detects a deposition rate of the thin film using temperature information and pressure information in the chamber, light intensity characteristics detected from optical emission spectroscopic data of the first deposition source gas, and a deposition rate detection formula; The deposition rate detection calculation formula is THL(T_S)=k(p, T, . . .) [Int. A], THL(T_S) is thin film deposition rate information, p is the pressure in the chamber, T is the temperature in the chamber; 7. The display panel manufacturing apparatus of claim 6, wherein the Int. A is information including the intensity characteristics of the light detected from optical emission spectrum data of the first deposition source gas.

9. the optical data analysis device integrates the deposition rate detection formula with respect to time to derive the thin film thickness detection formula; The thin film thickness detection calculation formula is: [Equation 1] and THL(th) is the calculated thickness of the thin film; 9. The display panel manufacturing apparatus according to claim 8, wherein the k is a constant including 1.

10. a thin film deposition apparatus for forming a thin film on a manufacturing substrate; a thin film characteristic detection device that analyzes a spectrum of light emitted during a thin film deposition process of the thin film deposition device to generate optical radiation spectroscopic data, and analyzes the optical radiation spectroscopic data in real time to detect thin film characteristic information formed on the manufacturing substrate, The thin film characteristic detection device includes: a photosensitivity detection module that generates the optical emission spectrum data based on a wavelength distribution and a light intensity distribution of plasma light in each wavelength band emitted from the chamber of the thin film deposition device; an optical data analysis device that analyzes the wavelength distribution of light, the intensity distribution of light, and a plurality of pieces of plasma characteristic information from the optical emission spectrum data, and detects at least one of the thin film characteristic information among deposition thickness information, refractive index information, and hydrogen concentration information of the thin film formed on the manufacturing substrate using a preset arithmetic expression.

Images