Vapor deposition mask and method for manufacturing organic electronic device

Abstract

To provide a vapor deposition mask which is resistant to plastic deformation and damage and can be reliably attracted by magnetic force.SOLUTION: A vapor deposition mask includes a base member 1 made of a non-magnetic material. The base member 1 includes a first region 2 having a plurality of through holes 4 and a second region 3 thicker than the first region 2. The second region 3 has a recess 5 including a magnetic layer 6 in the recess 5.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a deposition mask and a method for manufacturing an organic electronic device. [Background technology]

[0002] Organic electroluminescence (EL) elements are self-emitting display elements with a thin-film laminate structure, capable of high-speed response. Because OLED panels can be used to create lightweight display devices with excellent video compatibility, they are attracting considerable attention as display devices for flat panel display (FPD) televisions and small displays for electronic viewfinders (EVFs). Many organic EL display devices are manufactured by depositing organic materials using a resistance heating vacuum deposition device. Full-color organic EL display devices, in particular, require precise manufacturing of minute RGB (red, green, blue) light-emitting elements. To achieve this, they are manufactured using a mask deposition method, in which a deposition mask made of magnetic metal or similar is used to selectively vacuum-deposit different organic materials for each RGB pixel at the desired location. The mask deposition method involves using a magnet or similar device to bring the deposition mask into close contact with the substrate, and then depositing material through the deposition mask, thereby producing a vivid full-color organic EL display device. Here, deposition masks are often made of magnetic materials. This is because they can be relatively easily attached to the substrate using magnets or the like. However, deposition masks made of magnetic materials have drawbacks, such as their heavy weight, difficulty in high-precision processing, and susceptibility to plastic deformation. Therefore, in order to reduce the weight of the deposition mask, Patent Document 1 provides a resin mask with recesses or through-holes in which magnetic members are placed. This method is said to be able to reduce the weight of the mask and improve the adhesion between the deposition mask and the substrate to be deposited. In addition, a method for manufacturing a deposition mask using a silicon substrate has been proposed as a base material that can be processed with high precision and is resistant to plastic deformation (Patent Document 2). Silicon can be processed using semiconductor manufacturing technology, allowing for processing precision up to several micrometers. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-20068 [Patent Document 2] Japanese Patent Application Laid-Open No. 2001-185350 Summary of the Invention [Problem to be solved by the invention]

[0004] As organic EL display devices continue to become increasingly high-definition, high-precision processing is essential, and deposition masks are becoming extremely thin. However, this creates new challenges when it comes to magnetically attracting deposition masks. In the deposition mask described in Patent Document 1, a thinner resin mask means that the recesses or through holes become shallower, which means that the applied magnetic material also becomes thinner. As a result, the volume of the magnetic material becomes smaller, and it becomes difficult to obtain a magnetic force sufficient to bring the deposition mask into contact with the deposition substrate. Furthermore, the thinner the deposition mask, the more susceptible the deposition mask is to plastic deformation and breakage. Even if the thinned region of the deposition mask can be attracted with sufficient magnetic force, if the mask is made of resin or metal, for example, the stress applied at that time will cause plastic deformation. Furthermore, if the thinned region is made of a silicon substrate as shown in Patent Document 2, it may not be able to withstand the magnetic force and may be broken. SUMMARY OF THE INVENTION An object of the present invention is to provide a deposition mask that is resistant to plastic deformation and destruction and that can be attracted with sufficient magnetic force. [Means for solving the problem]

[0005] The deposition mask of the present invention is a substrate made of a non-magnetic material; the substrate has a first region having a plurality of through holes and a second region that is thicker than the first region, The second region has a recess and a magnetic layer in the recess. [Effects of the Invention]

[0006] According to the present invention, it is possible to provide a deposition mask that is resistant to plastic deformation and breakage and can be attracted with sufficient magnetic force, thereby realizing higher precision and improved reliability of organic electronic devices such as organic light-emitting devices. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 2 is a schematic diagram of a deposition mask according to the first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view showing a state in which deposition is performed using the deposition mask of FIG. [Figure 3] FIG. 2 is a schematic cross-sectional view of a comparative example of the present invention. [Figure 4] 3A to 3C are schematic cross-sectional views showing an example of a method for manufacturing the vapor deposition mask according to the first embodiment. [Figure 5] 3A to 3C are schematic cross-sectional views showing an example of a method for manufacturing the vapor deposition mask according to the first embodiment. [Figure 6] FIG. 10 is a schematic cross-sectional view showing a state in which deposition is performed using a deposition mask according to a second embodiment. [Figure 7] 5A to 5C are schematic cross-sectional views showing an example of a method for manufacturing a vapor deposition mask according to a second embodiment. [Figure 8] FIG. 10 is a schematic cross-sectional view showing a state in which deposition is performed using a deposition mask according to a third embodiment. [Figure 9] 10A to 10C are schematic cross-sectional views showing an example of a method for manufacturing a vapor deposition mask according to a third embodiment. [Figure 10] 1 is a schematic diagram illustrating an example of a display device according to an embodiment of the present invention. [Figure 11]1A is a schematic diagram illustrating an example of an imaging device according to an embodiment of the present invention, and FIG. 1B is a schematic diagram illustrating an example of an electronic device according to an embodiment of the present invention. [Figure 12] 1A is a schematic diagram illustrating an example of a display device according to an embodiment of the present invention, and FIG. 1B is a schematic diagram illustrating an example of a foldable display device. [Figure 13] 1A is a schematic diagram showing an example of an illumination device according to an embodiment of the present invention, and FIG. 1B is a schematic diagram showing an example of a moving body having a vehicle lamp according to an embodiment of the present invention. [Figure 14] 1A is a schematic diagram showing an example of a wearable device according to an embodiment of the present invention, and FIG. 1B is a schematic diagram showing another example of a wearable device according to an embodiment of the present invention. [Figure 15] 1A is a schematic diagram illustrating an example of an image forming apparatus according to an embodiment of the present invention, and FIGS. 1B and 1C are schematic diagrams illustrating an example of an exposure light source of the image forming apparatus according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different forms, and should not be construed as being limited to the description of the embodiments exemplified below. Furthermore, in order to clarify the explanation, the drawings may show the width, thickness, shape, etc. of each part more schematically than the actual form, but these are merely examples and do not limit the interpretation of the present invention.

[0009] First Embodiment A first embodiment of the present invention will be described below.

[0010] <Deposition mask> Figure 1 is a schematic diagram of a deposition mask according to a first embodiment of the present invention, in which Figure 1(a) is a schematic plan view seen from the side facing a deposition substrate, and Figure 1(b) is a schematic diagram showing the A-A' cross section in Figure 1(a).

[0011] The deposition mask 100 shown in FIG. 1 has a substrate 1 made of a nonmagnetic material. As shown in FIG. 1(b), the substrate 1 has a membrane region (first region) 2 having a plurality of openings (through holes) 4 and a beam region (second region) 3 that is thicker than the membrane region 2. The membrane region 2 is formed to be flush with the surface of the beam region 3 having the magnetic layer 6. As shown in FIG. 1(a), the substrate 1 is circular and has a plurality of rectangular membrane regions 2. The beam region 3 is formed around the membrane region 2 and at the end of the substrate 1. The beam region 3 has recesses 5 formed as lattice-shaped grooves and circumferential grooves along the outer periphery of the substrate 1. The depth of the recesses 5 is greater than the thickness of the membrane region 2. A magnetic layer 6 is embedded in the recesses 5, and the thickness of the magnetic layer 6 is greater than the depth of the recesses 5. Furthermore, a low-hardness layer 7 is provided on the surface of the magnetic layer 6.

[0012] FIG. 2 is a schematic cross-sectional view showing deposition using the deposition mask of FIG. 1. As shown in FIG. 2, a substrate 8 to be deposited is held by an electrostatic chuck 9 with its surface to be deposited facing downward. A magnet 10 is disposed on the surface of the electrostatic chuck 9 opposite to the surface facing the substrate 8 to be deposited. A deposition mask 100 is disposed so that its surface having a magnetic layer 6 faces the substrate 8 to be deposited. At least a portion of the edge of the deposition mask 100 is held by a mask holder 13 made of a magnetic material. The magnet 10 attracts the mask holder 13 and the magnetic layer 6 of the deposition mask 100, causing the low-hardness layer 7 of the deposition mask 100 to abut against the substrate 8 to be deposited. The deposition mask 100 is aligned so that the opening 4 faces the deposition area 11 of the substrate 8 to be deposited. Deposition material flying from a deposition source 12 (not shown) below the deposition mask 100 passes through the opening 4 and adheres to the deposition area 11.

[0013] The effects of this embodiment will be described below in comparison with a comparative example shown in FIG. The main role of the magnetic layer 6 in this embodiment is to hold the deposition mask 100 as parallel as possible to the substrate 8 to be deposited. For comparison, FIG. 3( a) shows an example of the opposing state of the deposition mask 100 and the substrate 8 to be deposited when the magnetic layer 6 is not provided in this embodiment. Note that the openings 4 and the deposition areas 11 are not shown in FIG. 3( a). In the example shown in FIG. 3( a), the deposition mask 100 bends due to its own weight or stress, and cannot be held parallel to the substrate 8 to be deposited. On the other hand, in this embodiment, the magnetic layer 6 is provided on beam regions 3 formed inside and on the outer periphery of the deposition mask 100. Therefore, even when the deposition mask 100 bends as shown in FIG. 3( a), the magnetic layer 6 can be attracted by the magnet 10, and the deposition mask 100 can be positioned parallel to the substrate 8 to be deposited.

[0014] To bring the low-hardness layer 7 of the deposition mask 100 into contact with the deposition substrate 8, it is preferable to generate a magnetic force between the magnetic layer 6 and the magnet 10 that exceeds the weight of the deposition mask 100. In order to generate a large magnetic force, it is conceivable to increase the volume of the magnetic layer 6. In this embodiment, however, the thickness of the magnetic layer 6 is set to be thicker than the membrane region 2 and the recessed portion 5, and therefore a sufficient volume can be ensured.

[0015] Furthermore, in this embodiment, the substrate 1 is made of a nonmagnetic material, and the membrane region 2 does not have a magnetic layer 6. This is to prevent plastic deformation or damage to the membrane region 2 when the deposition mask 100 is attracted by the magnet 10. For comparison, FIG. 3(b) shows an example of the opposing state of the deposition mask 100 and the deposition target substrate 8 when the membrane region 2 is made of a magnetic material. Note that the electrostatic chuck 9, magnet 10, and mask holder 13 are not shown in FIG. 3(b). Generally, the membrane region 2 is very thin and easily deforms when an external force is applied. That is, when the deposition mask 100 is attracted by the magnet 10, in the example of FIG. 3(b), the center of the membrane region 2 is significantly deformed in a convex shape relative to the deposition target substrate 8, which makes it prone to plastic deformation or damage. On the other hand, in this embodiment, the membrane region 2 does not contain a magnetic material and is made only of a nonmagnetic material. Therefore, no deformation due to magnetic force occurs in the membrane region 2, and the risk of plastic deformation or breakage can be reduced.

[0016] In this embodiment, the magnetic layer 6 and the low-hardness layer 7 also function as spacers, and the membrane region 2 does not come into contact with the substrate 8. This further reduces the risk of damage to the membrane region 2 due to contact with the substrate 8.

[0017] Next, each part of the deposition mask 100 in this embodiment will be described. [Membrane region (first region) 2] It is preferable that the membrane region 2 be maintained as flat as possible relative to the deposition substrate 8. Therefore, it is preferable that the membrane region 2 be made of a non-magnetic material with a volume magnetic susceptibility of 1 or less to prevent deformation due to the magnetic field from the magnet 10. Furthermore, it is preferable that the material constituting the membrane region 2 be a highly rigid material that is resistant to deformation and has a Young's modulus of 50 GPa or more, preferably exceeding 100 GPa. Furthermore, if the membrane region 2 is configured with a film structure that exerts tensile stress as a whole, it is easier to maintain a flat state. Furthermore, since it is preferable to provide the openings 4 with high precision and high definition, it is even better to select a material that takes ease of processing into consideration. Regarding the method for forming the membrane region 2, a base material such as a semiconductor substrate may be used as is, or a film may be formed using a CVD method, sputtering method, various plating methods, or the like.

[0018] The Young's modulus of the main layer constituting the membrane region 2 is preferably 50 GPa or more, more preferably 100 GPa or more, and even more preferably more than 100 GPa. The main layer constituting the membrane region 2 is preferably a non-magnetic metal layer. The main layer constituting the membrane region 2 preferably contains Si. Here, the main layer constituting the membrane region 2 is the thickest layer among the layers constituting the membrane region 2. When there are multiple layers made of the same material, the total thickness of the layers made of the same material is the thickness of the layer made of that material.

[0019] [Beam area (second area) 3] The beam region 3 is a portion that determines the rigidity and mass of the entire deposition mask 100. Therefore, it is preferable that the beam region 3 be made of a material that has a similar rigidity to the membrane region 2 but also a lighter specific gravity. Furthermore, it is even more preferable that the beam region 3 be made of a material that has a small linear expansion coefficient or a material similar to that of the deposition substrate 8, because this can suppress misalignment caused by heat generation between the deposition mask 100 and the deposition substrate 8. Regarding the method for forming the beam region 3, a base material such as a semiconductor substrate may be used as is, or the beam region 3 may be formed by using a CVD method, a sputtering method, various plating methods, or the like.

[0020] [Magnetic layer 6] The magnetic layer 6 is preferably made of a material that is easily attracted by the magnet 10. Therefore, a material with a volume magnetic susceptibility of 10 or more is preferably selected for the magnetic layer 6, and a volume magnetic susceptibility of 100 or more is even more preferable. Specifically, iron, nickel, cobalt, and alloys thereof can be selected. The magnetic layer 6 can be formed by electroplating or electroless plating, or by various printing methods such as screen printing or patterning an ink-formed magnetic material with a dispenser.

[0021] [Low hardness layer 7] The low-hardness layer 7 is in direct contact with the substrate 8 to be deposited. Therefore, the low-hardness layer 7 is required to be damage-free to the substrate 8 to be deposited. Therefore, it is preferable to select a material for the low-hardness layer 7 that has a lower hardness than the materials for the base 1 and the magnetic layer 6. The low-hardness layer 7 preferably has a lower hardness than the surface of the membrane region 2 on the side of the beam region 3 having the magnetic layer 6 and the surface of the magnetic layer 6. In addition, the low-hardness layer 7 is preferably made of an organic material or contains a fluororesin. The low-hardness layer 7 can be formed by various vapor deposition methods, CVD methods, sputtering methods, various plating methods, etc.

[0022] <Method of manufacturing deposition mask> An example of a method for manufacturing a deposition mask according to this embodiment will be described with reference to Fig. 4 and Fig. 5. Fig. 4 shows only part B in Fig. 5 in a state in which it is turned upside down. Also, Fig. 5 omits the illustration of the stress adjustment layer 17 and the low-hardness layer 7.

[0023] An SOI (Silicon On Insulator) substrate 20 is used as the base material. In this example, the device layer 14 of the SOI substrate 20 is the main layer of the membrane region 2. Therefore, the film thickness of the device layer 14 is set to be thicker than that of the box layer 15. The device layer 14 is a layer of single crystal silicon, which has a high Young's modulus, a light specific gravity, and is easy to micro-process, making it suitable as a constituent material of the membrane region 2.

[0024] 4(a), a stress adjustment layer 17 such as a SiN film is formed on the surface of the device layer 14 of the SOI substrate 20 using a plasma CVD method or the like to have a thickness thinner than that of the device layer 14. The stress adjustment layer 17 becomes the surface layer of the membrane region 2 on the side of the beam region 3 having the magnetic layer 6. By applying a tensile stress by the stress adjustment layer 17, the membrane region 2 to be formed later can be more easily maintained in a flat state.

[0025] 4(b), photolithography is used to pattern the region that will become the opening 4 and the recess 5. In this example, etching is performed using reactive ion etching (RIE) or the like using a reactive gas to etch not only the stress adjustment layer 17 and the device layer 14, but also parts of the box layer 15 and the handle layer 16.

[0026] Next, a seed layer (not shown) is applied to the recesses 5, and then, as shown in Fig. 4(c), a magnetic layer 6 made of a magnetic metal such as nickel is formed by electroplating or the like until it is thicker than the depth of the recesses 5. Thereafter, electroless co-plating of nickel and PTFE or the like is performed on the magnetic layer 6 to form a low-hardness layer 7.

[0027] 4(d), a resist is sprayed onto the entire surface of the SOI substrate 20 on the device layer 14 side by an air spray method or the like to form a protective layer 18. Subsequently, a conductive tape 19 is attached to the top of the protective layer 18 for further protection.

[0028] Next, the SOI substrate 20 with the conductive tape 19 attached is processed on the handle layer 16 side. First, as shown in Fig. 5(a), a resist 21 pattern is formed by photolithography in the area that will become the beam region 3 on the surface of the handle layer 16. The opening of the resist 21 becomes the membrane region 2.

[0029] 5(b), the handle layer 16 is etched down to the box layer 15. The etching can be performed by the Bosch method or the like.

[0030] Subsequently, as shown in FIG. 5(c), the conductive tape 19 is peeled off from the SOI substrate 20, and the resist 21 and the protective layer 18 are stripped off with an organic solvent, thereby obtaining the deposition mask 100.

[0031] The deposition mask of the first embodiment obtained in this manner is processed using a silicon process, allowing for high-definition. Furthermore, it can be reliably attached to a magnet and is less susceptible to plastic deformation or breakage when attached to the magnet or when in contact with the deposition substrate. This allows for higher precision and improved reliability of organic electronic devices such as organic light-emitting devices.

[0032] Second Embodiment <Deposition mask> 6 is a schematic cross-sectional view showing a state in which deposition is performed using the deposition mask of the second embodiment. In this embodiment, the thickness of the magnetic layer 6 embedded in the recesses 5 is thinner than the depth of the recesses 5. Furthermore, this embodiment does not have a low-hardness layer 7. The other parts are the same as those of the first embodiment, so a description thereof will be omitted.

[0033] The thickness of the magnetic layer 6 is thinner than the depth of the recesses 5, but the depth of the recesses 5 is sufficiently greater than the thickness of the membrane region 2, so the thickness of the magnetic layer 6 is sufficiently large. Therefore, the volume of the magnetic layer 6 is secured to be sufficient to be attracted by the magnet 10.

[0034] In this embodiment, the magnetic layer 6 does not function as a spacer between the deposition mask 100 and the deposition substrate 8. However, this system is particularly useful when a spacer 22 is provided on the deposition substrate 8, as shown in FIG. 6 . The spacer 22 can be formed with high precision and accuracy on the deposition substrate 8 by combining spin coating or CVD with a photolithography process. Therefore, the spacer 22 allows the gap between the membrane region 2 and the deposition substrate 8 to be narrow and precisely defined, thereby achieving a uniform film thickness distribution of the film deposited on the deposition area 11. In this system, it is preferable that the thickness of the magnetic layer 6 be thinner than that of the recess 5 so as not to interfere with the highly precise gap definition by the spacer 22.

[0035] <Method of manufacturing deposition mask> An example of a method for manufacturing a deposition mask according to this embodiment will be described with reference to FIG.

[0036] A silicon wafer 23 is used as the substrate. First, as shown in FIG. 7( a), a silicon oxide film 24, a silicon nitride film 25, and a silicon oxide film 26 are laminated in this order on the surface of the silicon wafer 23. The silicon oxide films 24 and 26 can be formed by a plasma CVD method or the like, and the silicon nitride film 25 can be formed by an LP-CVD method or the like. In this example, the silicon nitride film 25 is the main layer of the membrane region 2. Therefore, the film thickness of the silicon nitride film 25 is set to be thicker than the total film thickness of the silicon oxide films 24 and 26.

[0037] 7(b), the regions that will become the openings 4 and the recesses 5 are patterned by photolithography. The silicon oxide films 24, 26 and the silicon nitride film 25 can be etched by reactive ion etching (RIE) or the like using a reactive gas. Subsequently, the silicon wafer 23 located at the bottoms of the openings 4 and the recesses 5 is etched by the Bosch method or the like.

[0038] Next, after providing a seed layer (not shown) to the recess 5, as shown in Figure 7(c), a magnetic layer 6 made of a magnetic metal such as nickel is formed by electroplating or the like so that it is thinner than the depth of the recess 5.

[0039] Thereafter, the back side of the silicon wafer is processed in the same manner as in the first embodiment shown in FIGS. 4(d) to 5(c), thereby obtaining the deposition mask 100 shown in FIG. 7(d).

[0040] The deposition mask of the second embodiment obtained in this manner is processed using a silicon process, allowing for high-definition. Furthermore, it can be reliably attached to a magnet and is less susceptible to plastic deformation or breakage when attached to the magnet or when in contact with the deposition substrate. This allows for higher precision and improved reliability of organic electronic devices such as organic light-emitting devices.

[0041] Third Embodiment <Deposition mask> 8 is a schematic cross-sectional view showing a state in which deposition is performed using the deposition mask of the third embodiment. In this embodiment, the depth of the recess 5 is equal to the thickness of the membrane region 2. The other parts are the same as those in the first embodiment, so a description thereof will be omitted.

[0042] In this embodiment, the magnetic layer 6 is thicker than the membrane region 2 , so that the volume of the magnetic layer 6 is secured to be large enough to be attracted by the magnet 10 .

[0043] <Method of manufacturing deposition mask> An example of a method for manufacturing a deposition mask according to this embodiment will be described with reference to FIG.

[0044] A silicon wafer 23 is used as the substrate. First, as shown in FIG. 9( a), a nonmagnetic metal layer 28 is patterned on the silicon wafer 23. In this example, a semi-additive method is used to pattern an electroless nickel-phosphorus plating film. Specifically, a Pd thin film or the like is first formed on the surface of the silicon wafer 23 as a seed layer 27. Then, a resist pattern (not shown) is formed in the areas that will become the openings 4 and the recesses 5, and electroless nickel-phosphorus plating is performed. Note that the concentration of phosphorus in the nickel is adjusted so that the film obtained by plating is nonmagnetic. Then, the resist pattern (not shown) is removed, and the nonmagnetic metal layer 28 patterned with the areas that will become the openings 4 and the recesses 5 is obtained. In this example, the nonmagnetic metal layer 28 becomes the main layer of the membrane region 2 and the surface layer of the membrane region 2 on the side of the beam region 3 that has the magnetic layer 6.

[0045] 9(b), the seed layer 27 in the area that will become the opening 4 and at the bottom of the recess 5 is removed by wet etching or the like. After that, a magnetic metal-containing ink such as magnetite fine particle ink is printed into the recess 5 by screen printing or the like to pattern the magnetic layer 6 that is thicker than the membrane region 2.

[0046] Subsequently, as shown in FIG. 9(c), a resin such as an acrylic resist (acrylic resin) is applied to the magnetic layer 6 by dispense coating or the like to form a low-hardness layer 7.

[0047] Thereafter, the back side of the silicon wafer is processed in the same manner as in the first embodiment shown in FIGS. 4(d) to 5(c), thereby obtaining the deposition mask 100 shown in FIG. 9(d).

[0048] The deposition mask of the third embodiment thus obtained does not require excessive use of vacuum processes, allowing for cost reduction. Furthermore, the deposition mask can be reliably attached to a magnet and is less susceptible to plastic deformation or breakage when attached to the magnet or when in contact with the deposition substrate. This allows for improved precision and reliability of organic electronic devices such as organic light-emitting devices.

[0049] <<Method for manufacturing organic electronic devices and uses>> 2, the method for manufacturing an organic electronic device of this embodiment includes a step of placing the deposition mask 100 of this embodiment with the surface having the magnetic layer 6 facing a deposition target substrate 8, and depositing an organic material on the deposition target substrate 8. An example of the organic electronic device of this embodiment is an organic light-emitting device such as an organic EL display device.

[0050] The organic light-emitting device according to this embodiment can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, or a light-emitting device having a white light source and a color filter.

[0051] The display device may be an image information processing device having an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., an information processing unit that processes the input information, and displays the input image on a display unit. The display device may have the organic light-emitting device of this embodiment, which has a plurality of pixels, at least one of which may have an organic light-emitting element and an active element such as a transistor connected to the organic light-emitting element. In this case, the substrate may be a semiconductor substrate such as silicon, and the transistor may be a MOSFET formed on the substrate. The image display device has an input unit for inputting image information and a display unit for outputting an image, and the display unit includes the display device of this embodiment.

[0052] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0053] 10 is a schematic diagram illustrating an example of a display device according to this embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected by flexible printed circuits FPCs 1002 and 1004. Transistors are printed on the circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device.

[0054] The display device according to this embodiment may have color filters having red, green, and blue colors, which may be arranged in a delta arrangement.

[0055] The display device according to the present embodiment may be used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0056] The display device according to this embodiment may be used as a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the imaging device or a display unit disposed within a viewfinder. The imaging device may be a digital camera or a digital video camera.

[0057] 11(a) is a schematic diagram showing an example of an imaging device according to this embodiment. The imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have a display device according to this embodiment. In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject is moving, the possibility that the subject will be blocked by an obstruction, and the like.

[0058] Since the optimum timing for capturing an image is very short, it is better to display information as quickly as possible. Therefore, it is preferable to use a display device using the organic light-emitting device of this embodiment. This is because the organic light-emitting device has a fast response speed. A display device using an organic light-emitting device can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0059] The imaging device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on an imaging element housed in a housing 1104. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may also be called a photoelectric conversion device. Instead of sequentially capturing images, the photoelectric conversion device can include an imaging method that detects the difference from the previous image, or a method of cutting out an image from a constantly recorded image, etc.

[0060] FIG. 11(b) is a schematic diagram illustrating an example of an electronic device according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may include a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The display unit 1201 may include an organic light-emitting device according to this embodiment. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint to unlock the device, etc. An electronic device having a communication unit can also be called a communication device. The electronic device 1200 may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit 1201. Examples of the electronic device 1200 include a smartphone and a laptop computer.

[0061] FIG. 12 is a schematic diagram illustrating an example of a display device according to this embodiment. FIG. 12(a) illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The display unit 1302 may include a light-emitting device according to this embodiment. The display device 1300 has the frame 1301 and a base 1303 that supports the display unit 1302. The base 1303 is not limited to the form shown in FIG. 12(a). The lower side of the frame 1301 may also serve as the base. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0062] FIG. 12(b) is a schematic diagram illustrating another example of a display device according to this embodiment. The display device 1310 in FIG. 12(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may include a light-emitting device according to this embodiment. The first display unit 1311 and the second display unit 1312 may be a single, seamless display unit. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or the first and second display units may display a single image.

[0063] FIG. 13(a) is a schematic diagram illustrating an example of a lighting device according to this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical filter 1404 that transmits light emitted by the light source 1402, and a light diffusion unit 1405. The light source 1402 may include an organic light-emitting device according to this embodiment. The optical filter 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse light from the light source, such as for illumination, and deliver the light over a wide area. The optical filter 1404 and the light diffusion unit 1405 may be provided on the light emission side of the lighting device. If necessary, a cover may be provided on the outermost surface.

[0064] The lighting device is, for example, a device that illuminates a room. The lighting device may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit for dimming these colors or a color tuning circuit for tuning the emitted color. The lighting device may have the organic light-emitting device of this embodiment and a power supply circuit connected to it. The power supply circuit is a circuit that converts AC voltage to DC voltage. The lighting device may have an inverter circuit. Furthermore, white has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device may have a color filter.

[0065] The lighting device according to this embodiment may also include a heat dissipation unit, which dissipates heat from within the device to the outside, and may be made of a material such as a metal with a high specific heat capacity or liquid silicon.

[0066] 13(b) is a schematic diagram of an automobile, which is an example of a moving body according to this embodiment. The automobile has tail lamps, which are an example of lighting fixtures. The automobile 1500 has tail lamps 1501, and may be configured to turn on the tail lamps when braking or the like is performed.

[0067] A tail lamp 1501 may include an organic light-emitting device according to this embodiment. The tail lamp 1501 may include a protective member for protecting the organic light-emitting device. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0068] An automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window 1502 may be a transparent display, provided that it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting device according to this embodiment. In this case, constituent materials of the electrodes and the like of the organic light-emitting device are made of transparent materials.

[0069] The moving body according to the present embodiment may be a ship, an aircraft, a drone, or the like. The moving body may have a body and a lighting device provided on the body. The lighting device may emit light to indicate the position of the body. The lighting device has the organic light-emitting device according to the present embodiment.

[0070] An application example of the display device of each of the above-described embodiments will be described with reference to Fig. 14. The display device can be applied to a system that can be attached as a wearable device, such as smart glasses, an HMD, or a smart contact lens. An image capturing and displaying device used in such an application example includes an image capturing device capable of photoelectrically converting visible light and a displaying device capable of emitting visible light.

[0071] Fig. 14(a) is a schematic diagram showing an example of a wearable device according to an embodiment of the present invention. Using Fig. 14(a), glasses 1600 (smart glasses) according to one application example will be described. An imaging device 1602 such as a CMOS sensor or SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, a display device according to each of the above-mentioned embodiments is provided on the back side of the lens 1601.

[0072] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0073] FIG. 14(b) is a schematic diagram showing another example of a wearable device according to an embodiment of the present invention. Using FIG. 14(b), glasses 1610 (smart glasses) according to one application example will be described. The glasses 1610 have a control device 1612, which is equipped with an imaging device corresponding to the imaging device 1602 in FIG. 14(a) and a display device. A lens 1611 is formed with an optical system for projecting light emitted from the imaging device in the control device 1612 and the display device, and an image is projected onto the lens 1611. The control device 1612 functions as a power source that supplies power to the imaging device and the display device, and also controls the operation of the imaging device and the display device.

[0074] The control device 1612 may include a gaze detection unit that detects the wearer's gaze. The gaze detection may use infrared light. The infrared light emitter emits infrared light toward the eyeball of the user gazing at the display image. An imaging unit with a light-receiving element detects the reflected infrared light from the eyeball, thereby obtaining a captured image of the eyeball. A reduction unit that reduces light from the infrared light emitter to the display unit in a planar view reduces degradation of image quality. The user's gaze toward the displayed image is detected from the captured image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the captured image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used. More specifically, gaze detection processing based on the pupil-corneal reflex method is performed. Using the pupil-corneal reflex method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0075] A display device according to one embodiment of the present invention may include an imaging device having a light receiving element, and may control the display image of the display device based on user line-of-sight information from the imaging device. Specifically, the display device determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0076] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0077] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from an image of the eyeball, using as training data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in an external device, it is transmitted to the display device via communication.

[0078] When display control is performed based on visual recognition detection, the smart glasses can be preferably applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured external information in real time.

[0079] FIG. 15(a) is a schematic diagram showing an example of an image forming apparatus according to an embodiment of the present invention. The image forming apparatus 140 is an electrophotographic image forming apparatus and includes a photoconductor 127, an exposure light source 128, a charging unit 130, a developing unit 131, a transfer unit 132, a transport roller 133, and a fixing unit 135. Light 129 is irradiated from the exposure light source 128, and an electrostatic latent image is formed on the surface of the photoconductor 127. The exposure light source 128 includes an organic light-emitting device according to this embodiment. The developing unit 131 includes toner and the like. The charging unit 130 charges the photoconductor 127. The transfer unit 132 transfers the developed image to a recording medium 134. The transport roller 133 transports the recording medium 134. The recording medium 134 is, for example, paper. The fixing unit 135 fixes the image formed on the recording medium 134.

[0080] 15(b) and 15(c) are diagrams showing an exposure light source 128 and are schematic diagrams illustrating a state in which multiple light-emitting units 136 are arranged on a long substrate. Arrow 137 indicates the direction parallel to the axis of the photoconductor, the column direction in which the organic light-emitting elements are arranged. This column direction is the same as the axis direction about which the photoconductor 127 rotates. This direction can also be referred to as the long axis direction of the photoconductor 127. FIG. 15(b) shows a configuration in which the light-emitting units 136 are arranged along the long axis direction of the photoconductor 127. FIG. 15(c) shows a configuration different from FIG. 15(b), in which the light-emitting units 136 are arranged alternately in the column direction in the first and second columns. The first and second columns are arranged at different positions in the row direction. The first column has multiple light-emitting units 136 arranged at intervals. The second column has light-emitting units 136 at positions corresponding to the intervals between the light-emitting units 136 in the first column. That is, the light-emitting units 136 are also arranged at intervals in the row direction. The arrangement in Figure 15(c) can also be described as a grid-like arrangement, a houndstooth arrangement, or a checkerboard pattern.

[0081] As described above, the organic light-emitting device according to this embodiment can provide a stable display with good image quality even over a long period of time. Furthermore, the organic light-emitting device according to this embodiment can provide both good visibility outdoors and power-saving display due to its highly efficient and bright light output. [Example]

[0082] Example 1 In this example, the deposition mask shown in FIG. 1 was manufactured according to the procedures shown in FIGS.

[0083] An SOI substrate 20 was used as the base material. In this example, the device layer 14 of the SOI substrate 20 is the main constituent material of the membrane region 2. Therefore, the film thickness of the device layer 14 is set to be thicker than that of the box layer 15. The device layer 14 is a layer of single-crystal silicon, which has a high Young's modulus, a low specific gravity, and is easy to micro-fabricate, making it suitable as a constituent material of the membrane region 2. The Young's modulus and indentation hardness of the device layer 14 were measured by nanoindentation and were found to be 135 GPa and 11.3 GPa, respectively.

[0084] First, as shown in FIG. 4(a), a SiN film was formed as a stress adjustment layer 17 on the surface of the device layer 14 of the SOI substrate 20 using plasma CVD, with a thickness thinner than that of the device layer 14. The stress adjustment layer 17 becomes the surface layer of the membrane region 2 on the side of the beam region 3 having the magnetic layer 6. By applying tensile stress with the stress adjustment layer 17, the membrane region 2, which will be formed later, will be more likely to maintain a flat state. The film stress of the SiN film was 150 MPa, the Young's modulus was 140 GPa, and the indent hardness was 7.5 GPa.

[0085] Next, as shown in Fig. 4(b), a region to become the opening 4 and a recess 5 were patterned by photolithography. Note that, in addition to the stress adjustment layer 17 and the device layer 14, etching was also performed on parts of the box layer 15 and the handle layer 16 by reactive ion etching (RIE) using a reactive gas.

[0086] Next, a seed layer (not shown) was applied to the recesses 5, and then, as shown in FIG. 4(c), a nickel magnetic layer 6 was formed by electroplating to a thickness of 1.0 μm greater than the recesses 5. Here, the indent hardness of the magnetic layer 6 was 6.1 GPa. Then, electroless co-plating of nickel and PTFE was performed on the magnetic layer 6 to form a low-hardness layer 7. The low-hardness layer 7 had a film thickness of 1.0 μm and an indent hardness of 2.6 GPa.

[0087] 4(d), a resist was sprayed onto the entire surface of the SOI substrate 20 on the device layer 14 side by an air spray method to form a protective layer 18. Subsequently, a conductive tape 19 was attached to the top of the protective layer 18 for further protection.

[0088] Next, the SOI substrate 20 with the conductive tape 19 attached was processed on the handle layer 16 side. First, as shown in Figure 5(a), a resist 21 pattern was formed by photolithography in the area that would become the beam region 3 on the surface of the handle layer 16. The opening of the resist 21 became the membrane region 2.

[0089] 5(b), the handle layer 16 was etched down to the box layer 15. The Bosch method was used for etching.

[0090] Subsequently, as shown in FIG. 5(c), the conductive tape 19 was peeled off from the SOI substrate 20, and the resist 21 and the protective layer 18 were stripped off with an organic solvent, thereby obtaining a deposition mask 100.

[0091] <Example 2> In this example, the deposition mask shown in FIG. 6 was manufactured by the procedure shown in FIG.

[0092] A silicon wafer 23 was used as the substrate. First, as shown in FIG. 7(a), a silicon oxide film 24, a silicon nitride film 25, and a silicon oxide film 26 were laminated in this order on the surface of the silicon wafer 23. The silicon oxide films 24 and 26 were formed using a plasma CVD method, and the silicon nitride film 25 was formed using an LP-CVD method. In this example, the silicon nitride film 25 becomes the main layer of the membrane region 2. Therefore, the thickness of the silicon nitride film 25 was set to be thicker than the combined thickness of the silicon oxide films 24 and 26. The silicon nitride film 25 had a tensile stress of 160 MPa, a Young's modulus of 230 GPa, and an indentation hardness of 7.8 GPa.

[0093] 7(b), the region that becomes the opening 4 and the recess 5 are patterned by photolithography. The silicon oxide films 24, 26 and the silicon nitride film 25 are etched by reactive ion etching (RIE) using a reactive gas. Subsequently, the silicon wafer 23 located at the bottom of the opening 4 and the recess 5 is etched by the Bosch method.

[0094] Subsequently, a seed layer (not shown) was applied to the recesses 5, and then a nickel magnetic layer 6 was formed by electroplating so as to be 0.5 μm thinner than the depth of the recesses 5, as shown in FIG. 7(c).

[0095] Thereafter, the back side of the silicon wafer was processed in the same manner as in Example 1 shown in FIGS. 4(d) to 5(c), to obtain the deposition mask 100 shown in FIG. 7(d).

[0096] Example 3 In this example, the deposition mask shown in FIG. 8 was manufactured by the procedure shown in FIG.

[0097] A silicon wafer 23 was used as the substrate. First, as shown in FIG. 9( a), an electroless nickel-phosphorus plating film was patterned as a nonmagnetic metal layer 28 on the silicon wafer 23 using a semi-additive method. Specifically, a Pd thin film was first formed as a seed layer 27 on the surface of the silicon wafer 23. Then, a resist pattern (not shown) was formed in the areas that would become the openings 4 and the recesses 5, and electroless nickel-phosphorus plating was performed. Note that the concentration of phosphorus in the nickel was set to 12 wt% so that the film obtained by plating would be nonmagnetic. Then, the resist pattern (not shown) was removed, and the nonmagnetic metal layer 28 patterned with the areas that would become the openings 4 and the recesses 5 was obtained. In this example, the nonmagnetic metal layer 28 became the main layer of the membrane region 2 and the surface layer of the membrane region 2 on the side of the beam region 3 that has the magnetic layer 6. The nonmagnetic metal layer 28 had a film stress of 20 MPa, a Young's modulus of 50 GPa, and an indentation hardness of 5.5 GPa.

[0098] 9(b), the seed layer 27 in the area that would become the opening 4 and at the bottom of the recess 5 was removed by wet etching. After that, the magnetic layer 6 was patterned by screen printing magnetite fine particle ink into the recess 5. The thickness of the magnetic layer 6 was 5.0 μm thicker than the thickness of the membrane region 2, and the indent hardness was 4.5 GPa.

[0099] 9(c), an acrylic resist (acrylic resin) was dispensed onto the magnetic layer 6 to form a low-hardness layer 7. The low-hardness layer 7 had a thickness of 2.0 μm and an indentation hardness of 1.9 GPa.

[0100] Thereafter, the back side of the silicon wafer was processed in the same manner as in Example 1 shown in FIGS. 4(d) to 5(c), to obtain the deposition mask 100 shown in FIG. 9(d).

[0101] ≪Included components≫ The disclosure of this embodiment includes the following configuration. (Configuration 1) a substrate made of a non-magnetic material; the substrate has a first region having a plurality of through holes and a second region that is thicker than the first region, The deposition mask, wherein the second region has a recess, and the recess has a magnetic layer therein. (Configuration 2) 3. The deposition mask according to claim 1, wherein the second region is disposed around the first region. (Configuration 3) 4. The deposition mask according to any one of structures 1 to 3, wherein the second region is located at an edge of the substrate. (Configuration 4) 5. The deposition mask according to any one of structures 1 to 4, wherein the recesses are arranged in a grid pattern. (Configuration 5) 5. The deposition mask according to any one of Structures 1 to 4, wherein the recess is provided on the outer periphery of the substrate. (Configuration 6) 6. The deposition mask according to any one of structures 1 to 5, wherein the first region is formed so as to be flush with a surface of the second region having the magnetic layer.

[0102] (Configuration 7) 7. The deposition mask according to any one of structures 1 to 6, wherein the first region is made of only a non-magnetic material. (Configuration 8) 8. The deposition mask according to any one of structures 1 to 7, wherein the depth of the recess is greater than the thickness of the first region. (Configuration 9) 9. The deposition mask according to any one of structures 1 to 8, wherein the thickness of the magnetic layer is smaller than the depth of the recesses. (Configuration 10) 9. The deposition mask according to any one of structures 1 to 8, wherein the thickness of the magnetic layer is greater than the depth of the recesses. (Configuration 11) 11. The deposition mask according to any one of structures 1 to 10, wherein the Young's modulus of the main layer constituting the first region is 50 GPa or more. (Configuration 12) 12. The deposition mask according to any one of structures 1 to 11, wherein the main layer constituting the first region is a non-magnetic metal layer.

[0103] (Configuration 13) 13. The deposition mask according to any one of structures 1 to 12, wherein the main layer constituting the first region contains Si. (Configuration 14) 14. The deposition mask according to any one of structures 1 to 13, further comprising a low-hardness layer on the surface of the magnetic layer, the low-hardness layer having a lower hardness than the surface of the first region on the side of the second region having the magnetic layer and the surface of the magnetic layer. (Configuration 15) 15. The deposition mask according to claim 14, wherein the low-hardness layer is made of an organic material. (Configuration 16) 15. The deposition mask according to claim 14, wherein the low-hardness layer contains a fluororesin. (Configuration 17) 17. A method for manufacturing an organic electronic device, comprising: placing the deposition mask according to any one of Structures 1 to 16 with the surface having the magnetic layer facing a substrate to be deposited; and depositing an organic material on the substrate to be deposited. [Explanation of symbols]

[0104] 1: substrate, 2: membrane region (first region), 3: beam region (second region), 4: opening (through hole), 5: recess, 6: magnetic layer, 7: low-hardness layer, 8: substrate to be deposited, 9: electrostatic chuck, 10: magnet, 11: area to be deposited, 12: deposition source, 13: mask holder, 14: device layer, 15: box layer, 16: handle layer, 17: stress adjustment layer, 18: protective layer, 19: conductive tape, 20: SOI, 21: resist, 22: spacer, 23: silicon wafer, 24: silicon oxide film, 25: silicon nitride film, 26: silicon oxide film, 27: seed layer, 28: non-magnetic metal layer, 100: deposition mask

Claims

1. a substrate made of a non-magnetic material; the substrate has a first region having a plurality of through holes and a second region that is thicker than the first region, The deposition mask is characterized in that the second region has a recess, and the recess has a magnetic layer therein.

2. The deposition mask according to claim 1 , wherein the second region is disposed around the first region.

3. 3. The deposition mask according to claim 1, wherein the second region is located at an end of the substrate.

4. 3. The deposition mask according to claim 1, wherein the recesses are arranged in a lattice pattern.

5. 3. The deposition mask according to claim 1, wherein the recess is provided on the outer periphery of the substrate.

6. 3. The deposition mask according to claim 1, wherein the first region is formed so as to be flush with a surface of the second region having the magnetic layer.

7. 3. The deposition mask according to claim 1, wherein the first region is made of only a non-magnetic material.

8. 3. The deposition mask according to claim 1, wherein the depth of the recess is greater than the thickness of the first region.

9. 3. The deposition mask according to claim 1, wherein the thickness of the magnetic layer is smaller than the depth of the recess.

10. 3. The deposition mask according to claim 1, wherein the thickness of the magnetic layer is greater than the depth of the recess.

11. 3. The deposition mask according to claim 1, wherein the main layer constituting the first region has a Young's modulus of 50 GPa or more.

12. 3. The deposition mask according to claim 1, wherein a main layer constituting the first region is a non-magnetic metal layer.

13. 3. The deposition mask according to claim 1, wherein a main layer constituting the first region contains Si.

14. 3. The deposition mask according to claim 1, further comprising a low-hardness layer on the surface of the magnetic layer, the low-hardness layer having a lower hardness than the surface of the first region on the side having the magnetic layer of the second region and the surface of the magnetic layer.

15. 15. The deposition mask according to claim 14, wherein the low-hardness layer is made of an organic material.

16. 15. The deposition mask according to claim 14, wherein the low-hardness layer contains a fluororesin.

17. 3. A method for manufacturing an organic electronic device, comprising the steps of: placing the deposition mask according to claim 1 or 2 with the surface having the magnetic layer facing a substrate; and depositing an organic material on the substrate.

Images