Base member and light-emitting device

Abstract

To provide a base member capable of easily and selectively removing an insulating film composed of insulating films at desired positions.SOLUTION: A base member includes: a base body having a first surface and a second surface; an electrode which includes a pad part and a draw-out part and is disposed on the first surface of the base body; and an insulating film covering the draw-out part. The insulating film is a distribution Bragg reflection film, includes silicon oxide and the like, and laminates two or more dielectric multilayered films having different refraction indices by turns. The laminated dielectric multilayered films have 70% or more reflection rate ranging from 350 nm to 410 nm and 20% or less reflection rate ranging from 500 nm to 535 nm. At least a part of the pad part is exposed from the insulating film. Surface roughness of the pad part at the exposed part is larger than surface roughness of the draw-out part, and difference between the surface roughness Ra of the draw-out part and the surface roughness Ra of the pad part is at least 0.2 μm or more.SELECTED DRAWING: Figure 9B

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a base member, a method for manufacturing a light-emitting device, a base member, and a light-emitting device. [Background technology]

[0002] Patent Document 1, for example, discloses a light-emitting device having an LED chip mounted on a mounting substrate on which a wiring layer (wiring electrodes) is formed. Patent Document 1 states that the mounting substrate is made of, for example, ceramic. In a light-emitting device configured in this manner, the wiring electrodes and the electrodes of the LED chip are usually protected by an insulating film, except for the connection portions, to protect the wiring electrodes and the electrodes of the LED chip. In the light-emitting device of Patent Document 1, the wiring electrodes and the like except for the connection portions are protected by an atomic layer deposition (ALD) film formed integrally with the surface of the LED chip. Patent Document 1 also discloses removing the insulating film by polishing. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-152504 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when removing the insulating film by polishing, it is not necessarily easy to selectively remove the insulating film from a desired position. Therefore, an object of the present disclosure is to provide a method for manufacturing a base member, a method for manufacturing a light-emitting device, a base member, and a light-emitting device that can easily and selectively remove an insulating film at a desired position. [Means for solving the problem]

[0005] A method for manufacturing a base member according to the present disclosure includes a preparation step of preparing a structure including a base having a first surface and a second surface opposite the first surface, an electrode disposed on the first surface of the base, and an insulating film covering the first surface and the second surface of the base and the electrode, and an electrode exposure step of irradiating the insulating film on the electrode with laser light to expose the electrode from the insulating film.

[0006] Another method for manufacturing a base member according to the present disclosure includes a preparation step of preparing a structure including a ceramic body that contains a metal element as a constituent element and forms a base, an electrode disposed on a first surface of the ceramic body, and an insulating film that covers the first surface and the electrode, and an electrode exposure step of irradiating the insulating film from above with laser light that is transmitted through the insulating film and absorbed by the electrode, thereby removing a portion of the electrode such that the ceramic body directly below the electrode is not exposed from the electrode, thereby exposing the electrode from the insulating film.

[0007] One base member according to the present disclosure is a base member including a base having a first surface and a second surface opposite the first surface, a pad portion and a lead portion electrically connected to the pad portion, an electrode arranged on the first surface of the base, and an insulating film covering the lead portion, wherein at least a portion of the pad portion is exposed from the insulating film, and the surface roughness of the pad portion at the exposed portion is greater than the surface roughness of the lead portion.

[0008] Another base member according to the present disclosure is a base member including a base having a first surface and a second surface opposite the first surface, a pad portion and a lead portion electrically connected to the pad portion, an electrode arranged on the first surface of the base, and an insulating film covering the lead portion, wherein a portion of the pad portion is exposed from the insulating film, and the surface roughness of the pad portion at the exposed portion is greater than the surface roughness of the pad portion covered by the insulating film.

[0009] A light emitting device according to the present disclosure includes the base member and a light emitting element provided in the mounting region.

[0010] Another light-emitting device according to the present disclosure is a light-emitting device comprising a base member on which the frame body is provided and a light-emitting element provided in an mounting area, and further comprising a sealing member that seals the area surrounded by the frame body. [Effects of the Invention]

[0011] The present disclosure configured as described above provides a method for manufacturing a base member, a method for manufacturing a light-emitting device, a base member, and a light-emitting device that can easily and selectively remove an insulating film at a desired position. [Brief explanation of the drawings]

[0012] [Figure 1A] FIG. 2 is a bottom view of the ceramic structure according to the first embodiment. [Figure 1B] 1B is a cross-sectional view of the ceramic structure according to the first embodiment taken along line IB-IB in FIG. 1A. [Figure 1C] FIG. 1 is a cross-sectional view of a ceramic member according to a first embodiment. [Figure 2A] FIG. 10 is a top view of a light emitting device according to a second embodiment. [Figure 2B] FIG. 10 is a bottom view of the light emitting device according to the second embodiment. [Figure 2C] 2B is a cross-sectional view of the light emitting device according to the second embodiment taken along the line AA in FIG. 2A. [Figure 3A] 10 is a cross-sectional view of a mounting substrate prepared in a mounting substrate preparation step of a manufacturing method according to Embodiment 2. FIG. [Figure 3B] 10 is a cross-sectional view showing the light-emitting element 1 mounted on a mounting substrate in the mounting step of the manufacturing method according to the second embodiment. FIG. [Figure 3C] 10 is a cross-sectional view showing the state where an insulating film 30 is formed in the insulating film forming step of the manufacturing method according to the second embodiment. FIG. [Figure 3D] 10 is a cross-sectional view showing a state in which laser light is irradiated in an electrode exposing step of the manufacturing method according to the second embodiment. FIG. [Figure 4A] FIG. 10 is a top view of a light emitting device according to a third embodiment. [Figure 4B] 4B is a cross-sectional view of the light emitting device according to the third embodiment taken along the line BB in FIG. 4A. [Figure 4C] FIG. 10 is a bottom view of the light emitting device according to the third embodiment. [Figure 5] FIG. 10 is a top view of a package of a light emitting device according to a fourth embodiment. [Figure 6] 10 is a top view of a package of a light emitting device according to Modification 1. FIG. [Figure 7A] FIG. 11 is a bottom view of a light emitting device according to a third modification. [Figure 7B] FIG. 10 is a bottom view of a light emitting device according to a fourth modification. [Figure 8A] FIG. 10 is a top view of a base member according to a fifth embodiment. [Figure 8B] 8 is a cross-sectional view of a base member according to a fifth embodiment (a cross-sectional view taken along line VIII-VIII in FIG. 8). [Figure 8C] FIG. 10 is a cross-sectional view of a modified form of the base member according to the fifth embodiment. [Figure 8D] FIG. 10 is a cross-sectional view of a modified form of the base member according to the fifth embodiment. [Figure 9A] FIG. 10 is a top view of a package of a light emitting device according to a fifth embodiment. [Figure 9B] 9A is a cross-sectional view of the package of the light emitting device according to the fifth embodiment (a cross-sectional view taken along line IX-IX in FIG. 9A). [Figure 9C] FIG. 10 is a cross-sectional view of a modified form of the package of the light emitting device according to the fifth embodiment. [Figure 9D] FIG. 10 is a cross-sectional view of a modified form of the package of the light emitting device according to the fifth embodiment. [Figure 9E] FIG. 10 is a cross-sectional view of a modified form of the package of the light emitting device according to the fifth embodiment. [Figure 9F] FIG. 10 is a cross-sectional view of a modified form of the package of the light emitting device according to the fifth embodiment. [Figure 9G] FIG. 10 is a cross-sectional view of a modified form of the package of the light emitting device according to the fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0013] The drawings referenced in the following description of the embodiments are schematic illustrations of the present disclosure, and therefore the scale, spacing, and positional relationships of each component may be exaggerated, or some components may be omitted. The scale and spacing of each component may not be consistent. In the following description, the same names and symbols generally indicate the same or similar components, and detailed descriptions will be omitted as appropriate. In the configuration of the wiring board, terms such as "top," "bottom," "left," and "right" may be interchangeable depending on the situation. In this specification, terms such as "top," "bottom," and "bottom" indicate the relative positions of components in the drawings referenced for explanation, and are not intended to indicate absolute positions unless otherwise specified. Hereinafter, embodiments according to the present disclosure will be described. Embodiment 1 The method for manufacturing the base member (ceramic member) of the first embodiment was made based on the unique findings of the inventors below. Specifically, the inventors attempted to remove the insulating film at the irradiated position by irradiating the insulating film with laser light in order to easily and selectively remove the insulating film at the desired position (hereinafter also referred to as laser ablation). However, when an insulating film formed on a ceramic body containing a metal element as a constituent element is removed by laser ablation, it has been found that the ceramic body can become conductive due to laser irradiation. The reason why the ceramic body becomes conductive is thought to be that the laser light transmitted through the insulating film is irradiated onto the ceramic body. On the other hand, the insulating film made of the same material formed on the electrode was removed by laser ablation. As a result of further investigation, it was found that even if an insulating film formed on an electrode is transparent to laser light, if the electrode located on the other side of the insulating film absorbs the laser light, for example, a part of the electrode near the surface will be scraped off by irradiation with laser light, and the insulating film will be removed together with the scraped electrode. In the following description, the term "electrode" refers to an electrode containing a metal material and having electrical conductivity, but for the sake of convenience in explaining the structure, it may also be referred to as an element electrode, an external connection electrode, an element connection electrode, or the like.

[0014] The method for manufacturing a ceramic member (base member) according to embodiment 1 was made based on the above-mentioned findings independently obtained by the present inventor, and is a method for manufacturing a ceramic member, including: a preparation step of preparing a ceramic structure including a ceramic body containing a metal element as a constituent element, an electrode arranged on a first surface of the ceramic body, and an insulating film covering the first surface and the electrode; and an electrode exposure step of irradiating the insulating film from above with laser light that is transmitted through the insulating film and absorbed by the electrode, thereby removing a portion of the electrode such that the ceramic body directly below the electrode is not exposed from the electrode, thereby exposing the electrode from the surface of the insulating film.

[0015] A method for producing a ceramic member according to embodiment 1 will be described with reference to FIGS. 1A to 1C. In the preparation step, the ceramic body 3 is, for example, as follows. The ceramic body 3 includes a metal element as a constituent element. Examples of the metal element include aluminum. Examples of ceramic body materials that include aluminum include aluminum nitride and aluminum oxide. As shown in FIGS. 1A and 1B, in the preparation step, a ceramic structure 4 is prepared, which includes a ceramic body, electrodes (external connection electrodes 12a and 12b) provided on a first surface of the ceramic body, and an insulating film 30 that covers the first surface of the ceramic body and the electrodes. It is preferable that at least the surface of the electrode contains gold, which makes it possible to easily remove the insulating film 30 on the electrode by laser ablation in the electrode exposure step. The insulating film 30 includes at least one material selected from the group consisting of silicon oxide, aluminum oxide, niobium oxide, tantalum oxide, aluminum nitride, silicon nitride, and silicon nitride oxide. The insulating film 30 is formed, for example, by atomic layer deposition. The insulating film 30 may be a single-layer film or a multi-layer film, but a multi-layer film is preferable. The insulating film 30 being a multi-layer film improves the gas barrier properties of the insulating film 30. The insulating film 30 can also be used as an optically functional film such as an anti-reflection film.

[0016] Fig. 1B is a cross-sectional view taken along line IB-IB in Fig. 1A. Fig. 1C is a cross-sectional view of the ceramic member according to the first embodiment of the present disclosure. That is, it is a schematic diagram of the state after a portion of the electrode of the ceramic structure 4 has been removed by laser ablation, exposing the electrode from the insulating film 30. The peak wavelength of the laser light irradiated in the electrode exposing step is set so as to be transmitted through the insulating film 30 and absorbed by the electrode provided below the insulating film 30, and can be set, for example, in the range of 250 nm to 550 nm. Regarding the laser device (equipment) used for laser ablation, visible light tends to be less expensive than ultraviolet light, and within visible light, green light tends to be cheaper than blue light. Therefore, it is preferable to use a laser light with a long wavelength within the above-mentioned peak wavelength range in which laser ablation is possible. Specifically, it is preferable to use laser light having a peak wavelength in the range of 260 nm to 540 nm, more preferably 400 nm to 535 nm, and particularly preferably 500 nm to 535 nm. A laser irradiation device that emits laser light with a peak wavelength in the above range is less expensive than a laser irradiation device that uses ultraviolet light, which reduces the cost of manufacturing equipment, and is also less expensive than devices used for patterning using photoresist and wet cleaning, which are examples of other methods for forming the insulating film 30, which reduces the cost of manufacturing equipment. The peak wavelength of the laser light is appropriately adjusted and set within the above range, taking into consideration the materials of the insulating film and the electrodes.

[0017] The intensity of the laser light irradiated in the electrode exposing step is set so that part of the electrode, for example, part of the electrode near the interface between the insulating film 30 and the electrode, is removed so that the ceramic body 3 directly below the electrode is not exposed from the electrode. For example, the intensity of the laser light is set so that the thickness of the electrode material removed from the electrode surface is in the range of 0.5 nm to 500 nm. Furthermore, when setting the intensity of the irradiated laser light, it is preferable to set it so that the thickness of the electrode material removed from the electrode surface is 200 nm or less.

[0018] The irradiation spot diameter of the irradiated laser light is set, for example, in the range of 15 μm to 60 μm, preferably in the range of 15 μm to 30 μm. Setting the irradiation spot diameter within this range can suppress the reduction in the flatness of the electrode surface due to laser ablation. The energy distribution of the laser beam is not necessarily uniform across the irradiation spot. Therefore, if the irradiation spot diameter of the laser beam is large, the uneven energy distribution within the irradiation spot diameter is reflected in the surface roughness of the electrode, resulting in a reduction in the flatness of the electrode surface. Furthermore, if the energy distribution of the laser beam within the irradiation spot diameter is the same regardless of the irradiation spot diameter, a smaller irradiation spot diameter reduces the variation in the processing depth within the irradiation spot diameter. Therefore, by setting the spot diameter within the above range, the reduction in the flatness of the electrode surface due to laser ablation can be suppressed. Furthermore, by irradiating the laser beam while partially overlapping the irradiation spots, the insulating film on the electrode surface can be efficiently removed. Examples of the overlapping range include 2 / 3 or less, 1 / 2 or less, 1 / 3 or less, 1 / 4 or less, and 1 / 5 or less of the laser spot area.

[0019] The laser light irradiated in the electrode exposing step is preferably a pulsed laser, and the pulse energy of the laser light is set in the range of, for example, 1 μJ to 1000 J, preferably 2 μJ to 300 μJ, more preferably 3 μJ to 100 μJ, and even more preferably 3 μJ to 10 μJ. The pulse width of the laser light is set in the range of, for example, 100 femtoseconds to 2000 femtoseconds, preferably 100 femtoseconds to 1000 femtoseconds, and even more preferably 100 femtoseconds to 500 femtoseconds. By using such a pulsed laser, it is possible to remove the insulating film on the electrode while preventing the ceramic body from becoming conductive.

[0020] Furthermore, when a pulsed laser is used in the electrode exposing step, it is preferable to scan the laser so that the laser light irradiation areas partially overlap each other. By using a pulsed laser, the thermal influence of the laser light can be reduced and the insulating film can be removed while maintaining the electrode structure.

[0021] The removal of the insulating film by laser ablation as described above is a dry method, so no drying step is required. In addition, the change in resistance is relatively small when comparing before and after the formation of the insulating film, and the wettability of the solder on the electrodes is good.

[0022] The pulse energy and pulse width of the laser light irradiated in the electrode exposing step are set in consideration of the material of the insulating film, the material of the electrodes, the thickness of the insulating film, the thickness of the electrodes, the spot diameter of the laser light, and the like. For example, when the insulating film is made of aluminum oxide (e.g., Al2O3) having a thickness of 400 nm and the electrode is made of Au plating having a thickness of 1 μm, the pulse energy and pulse width of the irradiated laser light are set in the range of 1 μJ to 1000 μJ and 100 to 2000 femtoseconds, preferably in the range of 3 μJ to 100 μJ and 100 to 1000 femtoseconds, more preferably in the range of 3 μJ to 10 μJ and 100 to 500 femtoseconds.

[0023] Hereinafter, a method for manufacturing a light emitting device, including the method for manufacturing the ceramic member described above, and a light emitting device manufactured by this manufacturing method will be described.

[0024] Embodiment 2 The light emitting device 100 of the second embodiment includes a mounting substrate 10 and a light emitting element 1 mounted on the mounting substrate 10, as shown in FIGS. 2A to 2C. As shown in FIG. 2C, the mounting board 10 includes a substrate 11, element connection electrodes 13a and 13b formed on the upper surface of the substrate 11, and external connection electrodes 12a and 12b formed on the lower surface of the substrate 11, and the element connection electrodes 13a and 13b and the external connection electrodes 12a and 12b are connected to each other by through electrodes 14a and 14b formed in through holes in the substrate 11, respectively. The light-emitting element 1 is, for example, a flip-chip type light-emitting element having two element electrodes 1a and 1b of different polarities on the electrode formation surface opposite the light-emitting surface, and the element electrodes 1a and 1b are connected to element connection electrodes 13a and 13b. In the light-emitting device 100 of embodiment 2, all of the outer surfaces, including the surface of the light-emitting element 1, except for the surfaces of the external connection electrodes 12a, 12b connected to external wiring, are covered with an insulating film 30 formed, for example, by the atomic layer deposition method described below.

[0025] According to the light emitting device 100 of the second embodiment configured as above, for example, it is possible to provide a highly reliable light emitting device with excellent moisture resistance and the like without providing a sealing member that covers the light emitting element.

[0026] Manufacturing method of the light emitting device of embodiment 2 The method for manufacturing a light emitting device according to the second embodiment includes the step of mounting a light emitting element in the preparation step of the method for manufacturing a ceramic member according to the first embodiment. Specifically, an external connection electrode is formed on the lower surface of a substrate which is a ceramic body containing a metal, and an element connection electrode to which an element electrode of a light-emitting element is connected is formed on the upper surface, and then the light-emitting element is mounted.After that, an insulating film is formed on the entire surface including the surface of the light-emitting element and the surface of the substrate, thereby preparing a light-emitting device structure containing a ceramic member. That is, in the manufacturing method of the light emitting device of the second embodiment, the preparation steps include 1-1. Mounting substrate preparation step, 1-2. Light emitting element mounting step, and 1-3. Insulating film formation step. The method for manufacturing the light emitting device of the second embodiment will be described in more detail below. In the following description, a substrate including the external connection electrodes and element connection electrodes is referred to as a mounting substrate (ceramic member), and the portion excluding the external connection electrodes and element connection electrodes is simply referred to as a substrate (ceramic body).

[0027] 1-1. Mounting board preparation process 3A is first prepared. Specifically, a mounting substrate 10 is prepared, which has external connection electrodes 12a and 12b on the lower surface (first surface) of a substrate 11, element connection electrodes 13a and 13b on the upper surface (second surface) to which element electrodes 1a and 1b of the light-emitting element 1 are connected, and through electrodes 14a and 14b that electrically connect the external connection electrodes 12a and 13a and the external connection electrodes 12b and 13b.

[0028] 1-2. Light emitting element mounting process Here, a light emitting element 1 is mounted. Specifically, as shown in FIG. 3B, the element connection electrodes 13a and 13b of the mounting substrate 10 and the element electrodes 1a and 1b of the light emitting element 1 are connected via connection members 21a and 21b. Here, the light-emitting element 1 shown in Figure 3B is a simplified drawing of a light-emitting element having element electrodes 1a and 1b on the same side, where element electrode 1a is, for example, a p-side element electrode connected to a p-side semiconductor layer, and element electrode 1b is, for example, an n-side element electrode connected to an n-side semiconductor layer. Although not shown in FIG. 3B, a protective element may be mounted in addition to the light emitting element 1.

[0029] 1-3.Insulating film formation process Here, the insulating film 30 is formed on the entire surface including the surface of the mounted light-emitting element and the surface of the mounting substrate. Here, the entire surface refers to all exposed surfaces of the mounting structure, including the surface of the light-emitting element, the surface of the substrate 11, the surfaces of the element connection electrodes 13a and 13b, the surfaces of the connection members 21a and 21b, the surfaces of the element electrodes 1a and 1b of the light-emitting element 1, and the surfaces of the external connection electrodes 12a and 12b, all of which are exposed to the outside, as shown in Fig. 3C.

[0030] The insulating film 30 is preferably formed by atomic layer deposition, which can form a dense insulating film 30 with a uniform thickness over the entire surface, including surfaces in different plane directions. Furthermore, since the protective function can be ensured with a relatively thin insulating film 30, the insulating film 30 can be thinned in the portion to be removed by laser ablation, and the insulating film 30 can be easily removed by laser ablation. Atomic layer deposition is a method for depositing layers of reactive components one atomic layer at a time. For example, to deposit a protective film of aluminum oxide (Al2O3) using TMA (trimethylaluminum) and water (H2O), proceed as follows:

[0031] First, H2O gas is introduced to form OH groups on the surface where the insulating film is to be formed (first reaction). Next, excess gas is exhausted, and then TMA gas is introduced to react the OH groups formed in the first reaction with TMA (second reaction). Next, excess gas is exhausted. The first reaction, exhaust, second reaction, and exhaust constitute one cycle, and by repeating this cycle, Al2O3 can be formed to a predetermined film thickness.

[0032] Atomic layer deposition is a film formation method with low linearity of reactive components and excellent step coverage, and unlike sputtering, CVD, etc., reactive components are supplied even near obstacles. As a result, a high-quality protective film can be formed with more uniform film thickness and quality in areas such as between the light-emitting element and substrate, just as in other areas without obstacles.

[0033] The insulating film obtained by atomic layer deposition has good film quality with fewer pinholes than insulating films obtained by sputtering, CVD, etc., and has excellent protective properties.

[0034] The insulating film 30 may be made of, for example, silicon oxide (SiO2), aluminum nitride (AlN), silicon nitride (Si3N4), niobium oxide (Nb2O5), tantalum oxide (Ta2O5), silicon nitride oxide (SiO x N y ) can be employed. The protective film is preferably made of aluminum oxide or silicon oxide. More preferably, it has a multilayer structure of two or more layers of aluminum oxide and silicon oxide. By making the protective film a multilayer film, gas barrier properties are improved. Furthermore, by making it a multilayer film, optical functions (for example, function as an anti-reflection film) can be further imparted. The film thickness of the insulating film 30 is not particularly limited, but is preferably 5 nm to 500 nm, more preferably 10 nm to 100 nm, and particularly preferably 20 nm to 50 nm. This is because productivity can be improved while suppressing the permeation of moisture and humidity.

[0035] (2) Electrode Exposing Step of Embodiment 2 3D , in the electrode exposing step of the second embodiment, laser light that penetrates the insulating film 30 and is absorbed by the external connection electrodes 12a and 12b provided below the insulating film 30 is irradiated from above the insulating film 30 to remove part of the surface of the external connection electrodes 12a and 12b, for example, the electrode material near the interface between the insulating film 30 and the external connection electrodes 12a and 12b, so that the ceramic body (substrate 11) is not exposed from the external connection electrodes 12a and 12b. This removal of the electrode material exposes the external connection electrodes 12a and 12b from the insulating film 30. At this time, the pulse energy of the pulsed laser light is set to, for example, from 1 μJ to 1000 J, preferably from 2 μJ to 300 μJ, more preferably from 3 μJ to 100 μJ, and even more preferably from 3 μJ to 10 μJ. The pulse width of the laser beam is set, for example, in the range of 100 to 2000 femtoseconds, preferably 100 to 1000 femtoseconds, and more preferably 100 to 500 femtoseconds. By using such a pulse laser, it is possible to remove the insulating film on the electrode while suppressing the ceramic body from becoming a conductor.

[0036] Through the above steps, the light emitting device 100 shown in FIG. 2C is manufactured by the method for manufacturing a light emitting device according to the second embodiment. In the electrode exposing process, the laser beam is preferably scanned over the entire surface of the mounting substrate 10 on the side where the external connection electrodes 12a and 12b are provided at least once in a plan view. When an electrode material is provided directly underneath the insulating film 30, it is removed along with the electrode material. However, the insulating film 30 provided directly on the ceramic body remains on the ceramic body, and the ceramic body is not exposed through the insulating film 30. Therefore, by scanning the laser beam over the entire surface of the mounting substrate 10 on the side where the external connection electrodes 12a and 12b are provided at least once, the external connection electrodes 12a and 12b can be selectively exposed through the insulating film 30 without laser alignment. More preferably, in each scanning row of the laser beam, at least a portion of the irradiation spots of the laser beam in adjacent rows should overlap. This makes it possible to more reliably scan the entire surface of the mounting substrate 10 on the side where the external connection electrodes 12a and 12b are provided. Fig. 2A is a top view of the light emitting device 100, and Fig. 2B is a bottom view of the light emitting device 100. As shown in Fig. 2A, the light emitting device 100 includes a protection element 2, for example.

[0037] Embodiment 3 The light emitting device of the third embodiment and a method for manufacturing the light emitting device will be described. The light emitting device of the third embodiment differs mainly in the following respects. (a) The light emitting device of the third embodiment includes a package 110 as a ceramic member in place of the mounting substrate 10. (b) The light emitting device of the third embodiment includes a distributed Bragg reflector film 230 made of a dielectric multilayer film as an insulating film.

[0038] In addition to the differences related to the light emitting device described above, the method for manufacturing the light emitting device of the third embodiment also differs in the following respects. (c) The step of mounting the light emitting element, which is included in the preparation step in the manufacturing method of the light emitting device of embodiment 2, is included after the electrode exposing step. The light emitting device and the method for manufacturing the light emitting device according to the third embodiment will be described in detail below.

[0039] Light-emitting device of embodiment 3 In the light emitting device of the third embodiment, the package 110 (ceramic member) includes a ceramic base 111 (ceramic body) having a recess, and a bottom surface of the recess, as shown in FIGS. 4A and 4B. The package 110 includes element connection electrodes 113a, 113b formed on the lower surface (first surface) of the package 110 opposite the bottom surface of the recess, to which the element electrodes of the light-emitting element 101 are connected, and external connection electrodes 112a, 112b formed on the lower surface (first surface) of the package 110 opposite the bottom surface of the recess, as shown in Figures 4B and 4C. Here, the external connection electrodes 112a, 112b and the element connection electrodes 113a, 113b are connected by through electrodes 114a, 114b formed in through holes that penetrate the ceramic base 111, for example.

[0040] Furthermore, a distributed Bragg reflector 230 is formed on the entire surface of the package 110, including the inner surface of the recess of the package 110 excluding the portions where the element connection electrodes 113a and 113b are formed, the portion of the package 110 excluding the portions where the external connection electrodes 112a and 112b are formed, the side surfaces of the package 110, and the upper surface of the package 110 excluding the portion where the spacer 151 is formed. The distributed Bragg reflector 230 is formed, for example, by alternately stacking two or more light-transmitting dielectric films having different refractive indices with a predetermined film thickness, and reflects light emitted by the light-emitting element 101. In the light-emitting device of embodiment 3, the distributed Bragg reflector 230 formed on the inner surface of the recess of the package 110 mainly serves to reflect light emitted by the light-emitting element 101, and the distributed Bragg reflector 230 formed on the lower surface of the package 110 serves to insulate and separate the external connection electrodes 112a and 112b.

[0041] Furthermore, the light emitting element 101 is provided in a recess in the package 110, and element electrodes of the light emitting element 101 are connected to element connection electrodes 113a and 113b via connecting members. The light emitting device of embodiment 3 also includes a light-transmitting lid 150 made of, for example, transparent glass, which covers the recess in the package 110 in which the light emitting element 101 is provided. The light-transmitting lid 150 is joined at the four corners of the upper end surface of the package 110 surrounding the recess by spacers 151 which also serve as connecting members.

[0042] In the light-emitting device of embodiment 3 configured as described above, the inner surface of the recess of package 110 is covered with distributed Bragg reflector film 230 except for the portions where element connection electrodes 113a and 113b are formed. Therefore, light emitted by light-emitting element 101 can be efficiently extracted to the outside through transparent lid 150, thereby increasing the light extraction efficiency.

[0043] Manufacturing method of the light emitting device of embodiment 3 As described above, the manufacturing method for the light emitting device of embodiment 3 differs from the above-mentioned light emitting device in that, in addition to the differences related to the light emitting device, the manufacturing method for the light emitting device of embodiment 3 further differs in that it includes a mounting process for the light emitting element, which is included in the preparation process in the manufacturing method for the light emitting device of embodiment 2, after the electrode exposure process. The method for manufacturing the light emitting device of the third embodiment will be specifically described below.

[0044] First, the method for manufacturing a light emitting device according to the third embodiment includes, in the preparation steps of the method for manufacturing a ceramic member according to the first embodiment, 1-1. package preparation step and 1-2. distributed Bragg reflection film (insulating film) formation step. In the following description, the ceramic substrate 111 (ceramic body) will be referred to as the ceramic body 111 excluding the external connection electrodes 112a, 112b, the element connection electrodes 113a, 113b, the through electrodes 114a, 114b, and the distributed Bragg reflector film 230.

[0045] 1-1.Package preparation process Here, a package 110 having a recess is prepared. Specifically, a ceramic base 111 having a recess is prepared, external connection electrodes 112a and 112b are formed on the lower surface of the ceramic base 111, and element connection electrodes 113a and 113b are formed on the bottom surface of the recess. The ceramic substrate 111 can be manufactured by either the so-called post-firing method or the co-firing method. When manufacturing the ceramic substrate 111, it is preferable that the outermost surface of the external connection electrode contains Au.

[0046] 1-2. Distributed Bragg reflection film (insulating film) formation process Here, a distributed Bragg reflector film is formed on the inner surface of the recess of package 110 (including the surfaces of element connection electrodes 113a and 113b), the top and side surfaces of package 110, and the bottom surface of package 110 (including the surfaces of external connection electrodes 112a and 112b).

[0047] The distributed Bragg reflector is preferably formed by atomic layer deposition (ALD). By using atomic layer deposition, two or more dielectric films constituting the distributed Bragg reflector can be formed to a predetermined thickness on the bottom and side surfaces of the recesses, which have different surface directions. This facilitates the formation of a distributed Bragg reflector having the same reflective properties on the bottom and side surfaces of the recesses, which have different surface directions. The distributed Bragg reflector preferably has a reflectivity of 70% or more in the range of 350 nm to 410 nm and a reflectivity of 20% or less in the range of 500 nm to 535 nm. Within these ranges, the Bragg reflector effectively transmits green light and effectively reflects ultraviolet light. When the light-emitting element emits ultraviolet light, the distributed Bragg reflector on the electrode surface is effectively removed by laser ablation, and the remaining distributed Bragg reflector can contribute to improving the light extraction efficiency of the light-emitting element. The distributed Bragg reflector can be formed, for example, by alternately forming a first dielectric film made of Nb2O5 and a second dielectric film made of SiO2. The thicknesses and number of layers of the first and second dielectric films are appropriately set in consideration of the emission wavelength of the light emitting element 101.

[0048] When the first dielectric film made of Nb2O5 is formed by atomic layer deposition, for example, the following procedure is performed. (Step A1) The vacuum chamber is evacuated to a predetermined vacuum level, and the ceramic member is heated to a film-forming temperature, preferably in the range of 150°C to 300°C, more preferably 200°C to 250°C. (Step A2) Then, an oxygen source gas containing oxygen is introduced into the vacuum chamber to bond oxygen to the entire ceramic member. O3 (ozone) gas, for example, can be used as the oxygen source gas. After oxygen is bonded to the surface of the ceramic member, the remaining oxygen source gas is evacuated. In this process, HO may also be used to bond OH groups to the surface of the ceramic member. (Step A3) Next, a metalorganic source gas containing niobium (Nb) is introduced into the vacuum chamber, and the oxygen bonded to the surface of the ceramic member or the like is reacted with the metalorganic source gas containing Nb, thereby bonding Nb to the oxygen bonded to the surface of the ceramic member. As the metalorganic source gas containing Nb, for example, tris(diethylamido)(tert-butylimido)niobium(V) or the like can be used. (Step A4) After Nb is bonded to the oxygen bonded to the surface of the ceramic member, the remaining metalorganic source gas containing Nb is exhausted. (Step A5) Next, an oxygen source gas containing oxygen is introduced to bond the oxygen to the Nb on the ceramic member. By repeating steps A2 to A5 a predetermined number of times on the surface of the ceramic member, Nb2O5 having a required film thickness is formed.

[0049] When the second dielectric film made of SiO2 is formed by atomic layer deposition, for example, the following procedure is performed. (Step B1) The vacuum chamber is evacuated to a predetermined vacuum level, and the ceramic member is heated to a film-forming temperature, preferably in the range of 150°C to 300°C, more preferably 200°C to 250°C. (Step B2) Then, an oxygen-containing oxygen source gas is introduced into the vacuum chamber to bond oxygen to the entire ceramic component. O3 (ozone) gas can be used as the oxygen-containing oxygen source gas. After oxygen is bonded to the surface of the ceramic component, the remaining oxygen source gas is exhausted. Note that in this process, HO may also be used to bond OH groups to the surface of the ceramic component. (Step B3) Next, a metalorganic precursor gas containing silicon (Si) is introduced into the vacuum chamber, and the oxygen bonded to the surface of the ceramic member or the like is reacted with the metalorganic precursor gas containing Si, thereby bonding Si to the oxygen bonded to the surface of the ceramic member. Tris(dimethylamino)silane gas or bis(diethylamino)silane gas or the like can be used as the Si precursor gas. (Step B4) After Si is bonded to the oxygen bonded to the surface of the ceramic member, the remaining organometallic source gas containing Si is exhausted. (Step B5) Next, an oxygen source gas containing oxygen is introduced to bond oxygen to the Si on the ceramic member. By repeating steps B2 to B5 a predetermined number of times on the surface of the ceramic member, SiO2 having a required film thickness is formed.

[0050] The distributed Bragg reflector film is not limited to being formed by atomic layer deposition, but may be formed by sputtering or vapor deposition. In addition, the distributed Bragg reflector film may be selectively formed on the inner surface of the recess of package 110 (including the surfaces of element connection electrodes 113a and 113b) and the bottom surface of package 110 (including the surfaces of external connection electrodes 112a and 112b), excluding the top surface and side surfaces of package 110.

[0051] (2) Electrode Exposing Step of Embodiment 3 In the electrode exposing step of the third embodiment, laser light is irradiated from above the distributed Bragg reflector films formed on the external connection electrodes 112a and 112b and above the distributed Bragg reflector films formed on the element connection electrodes 113a and 113b, respectively, so that the laser light penetrates the distributed Bragg reflector films and is absorbed by the external connection electrodes 112a and 112b and the element connection electrodes 113a and 113b, thereby removing a portion of the surface of the external connection electrodes 112a and 112b and a portion of the surface of the element connection electrodes 113a and 113b so as not to expose the ceramic base 111. This removal of the electrode material exposes the external connection electrodes 112a and 112b and the element connection electrodes 113a and 113b from the distributed Bragg reflector film 230. The peak wavelength of the laser light is 250 nm to 550 nm, preferably 500 nm to 100 nm. If a laser beam having a peak wavelength in the range of 500 nm to 535 nm is used, Au contained in the electrode material can be removed by laser ablation using relatively inexpensive equipment.

[0052] Through the above steps, the package 110 for the light emitting device of the third embodiment is prepared.

[0053] (3) Mounting and light-transmitting lid joining process The light emitting element 101 is mounted on the package 110 prepared as described above, and a light-transmitting lid 150 is joined with a spacer 151 .

[0054] The light emitting device of the third embodiment is fabricated through the above steps.

[0055] Embodiment 4 The light emitting device of the fourth embodiment and a method for manufacturing the light emitting device will be described. The light emitting device of the fourth embodiment is configured similarly to the light emitting device of the third embodiment, except that the element connecting electrodes 113a and 113b are exposed from the distributed Bragg reflector film 230 at a plurality of locations. Specifically, the portions of the element connection electrodes 113a and 113b that are to be connected to the element electrodes of the light emitting element are exposed by a plurality of openings 230a and 230b provided in the distributed Bragg reflector film 230, as shown in FIG. In the light emitting device of embodiment 3, the exposed portions of the element connecting electrodes 113a and 113b are exposed by, for example, rectangular openings 230A and 230B provided in the distributed Bragg reflector film 230, and the openings 230A and 230B are respectively indicated by dashed lines in FIG.

[0056] In the light emitting device of the fourth embodiment, the openings 230a and 230b that expose the element connection electrodes 113a and 113b at a plurality of locations are preferably circular and provided distributed over the entire area facing the element electrodes of the light emitting element 1. Furthermore, in the light-emitting device of embodiment 4, the element electrode connection portions of the light-emitting elements are provided, for example, at the exposed portions of the element connection electrodes 113a, 113b, i.e., at positions corresponding to the openings 230a, 230b, respectively, with a size approximately the same as that of the openings 230a, 230b, and are connected by bumps formed on the exposed portions of the element connection electrodes 113a, 113b in the openings 230a, 230b.

[0057] In the light-emitting device of embodiment 4, when the light-emitting element is, for example, a flip-chip type light-emitting element having a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate in that order from the substrate side, and having a first conductivity type electrode connection portion and a second conductivity type electrode connection portion on the same side as the second conductivity type semiconductor layer, the element electrode connection portions (first conductivity type electrode connection portion and second conductivity type electrode connection portion) of the light-emitting element are provided, for example, as follows. First, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are stacked on a substrate for a light-emitting element, and then the second conductivity type semiconductor layer and the active layer on the first conductivity type semiconductor layer in the portion where the first conductivity type electrode connection portion is to be formed are removed to expose the first conductivity type semiconductor layer. Then, a first conductivity type electrode connection portion is formed in contact with the exposed first conductivity type semiconductor layer. In this manner, the first conductivity type electrode connection portion is formed. In addition, the second conductivity type electrode connection portion is formed at a predetermined position on the second conductivity type semiconductor layer. In addition, an insulating film, for example, is formed on the first conductivity type electrode connection portion and the portion on the second conductivity type semiconductor layer excluding the second conductivity type electrode connection portion.

[0058] The first conductivity type electrode connection portion and the second conductivity type electrode connection portion of the light emitting element configured as above are connected via bumps to the exposed portions of the package element connection electrodes 113a and 113b, respectively. This completes the mounting of the light emitting element. The light emitting element has a peak wavelength in the range of 280 nm to 575 nm, preferably in the range of 280 nm to 410 nm, and particularly preferably in the range of 350 nm to 410 nm.

[0059] The method for manufacturing the light emitting device of the fourth embodiment will be described below in terms of the differences from the method for manufacturing the light emitting device of the third embodiment.

[0060] First, the manufacturing method of the light emitting device of embodiment 4 is similar to the manufacturing method of the light emitting device of embodiment 3 in that the preparation steps in the manufacturing method of the ceramic member of embodiment 1 include 1-1. Package preparation step and 1-2. Distributed Bragg reflection film (insulating film) formation step.

[0061] Electrode exposure step of embodiment 4 In the electrode exposure process of embodiment 4, laser light is irradiated from above the distributed Bragg reflector films formed on the external connection electrodes 112a and 112b and from above the distributed Bragg reflector films formed on the element connection electrodes 113a and 113b, respectively, so that the laser light penetrates the distributed Bragg reflector films and is absorbed by the external connection electrodes 112a and 112b and the element connection electrodes 113a and 113b, thereby evaporating and removing part of the surface of the external connection electrodes 112a and 112b and part of the surface of the element connection electrodes 113a and 113b so as not to expose the ceramic base 111, which is the same as the electrode exposure process of embodiment 3.

[0062] However, the electrode exposing step of the fourth embodiment differs from the electrode exposing step of the third embodiment in that laser ablation is performed so as to expose the element connecting electrodes 113a and 113b from the distributed Bragg reflector film 230 at a plurality of locations. For example, in the electrode exposing step of the fourth embodiment, when laser light is irradiated from above the distributed Bragg reflector film formed on the element connecting electrodes 113a and 113b, the laser light is turned on and off based on the position information of the openings 230a and 230b. For example, the portions where the element connection electrodes 113a and 113b are exposed are converted into data using XY coordinates on the plane of the element connection electrodes 113a and 113b or on the distributed Bragg reflection film 230, and based on this data, laser light is irradiated to the portions where the element connection electrodes 113a and 113b are exposed, and laser light irradiation is stopped in other portions. According to the electrode exposing step of the fourth embodiment, the openings 230a and 230b can be formed in the distributed Bragg reflector film 230 with high positional accuracy.

[0063] In the package manufactured as described above, bumps are formed on the element connection electrodes 113a, 113b exposed through the openings 230a, 230b, respectively, and the first conductivity type electrode connection portion and the second conductivity type electrode connection portion of the light-emitting element are connected to the bumps so as to face each other. In this manner, the light emitting element is mounted at a predetermined position in the package.

[0064] Variation 1. In the light-emitting device of the fourth embodiment described above, the openings 230a and 230b have the same opening shape and area. However, in the light-emitting devices of the embodiments, the openings 230a and 230b are not limited to having the same opening shape and area. By using laser ablation, it is possible to select the exposed areas of the openings 230a and 230b. For example, by adjusting the areas of the openings 230a and 230b so that the remaining area of ​​the distributed Bragg reflector film 230 is large, light from the light-emitting element can be efficiently reflected by the distributed Bragg reflector film 230, thereby improving the light extraction efficiency. For example, as shown in FIG. 6, the openings that expose the element connection electrodes 113a may be configured with two types of openings 230a and 230aa that have different opening areas, or may be configured with three or more types of openings that have different opening areas. The openings exposing the element connection electrodes 113a may be configured with two or more types of openings with different shapes, and in this case, the opening areas may be different or the same. The shape of the openings is not limited to a circular shape, and may be any shape that can be realized by scanning with a laser, such as an ellipse, a triangle, a rectangle, or any other polygonal shape.

[0065] Variation 2 In the light emitting device of embodiment 2, the external connection electrodes 12a and 12b have the same shape as shown in Fig. 2B. Similarly, the light emitting devices of embodiments 3 and 4 are configured with external connection electrodes 112a and 112b having the same shape as shown in Fig. 4C. However, the two external connection electrodes of the light emitting devices of the embodiments may have different shapes and / or sizes.

[0066] Variation 3 As shown in FIG. 7A, the light emitting devices of the second to fourth embodiments may have a heat dissipation portion 16 made of, for example, a metal with high thermal conductivity between the two external connection electrodes 12a (112a) and 12b (112b). The heat dissipation portion 16 may be made of the same metal as the external connection electrodes 12a (112a), 12b (112b), or may be made of a different metal.

[0067] Variation 4 In the light emitting devices of the second to fourth embodiments, both or one of the external connection electrodes 12a (112a) and 12b (112b) may have extending portions 12aa (112aa) and 12bb (112b) as shown in FIG. 7B. (112bb).

[0068] Variation 5 In the base member and light-emitting device of Embodiments 1 to 4, the base is described as being a ceramic body, but the base is not limited to a ceramic body and may be, for example, a resin body such as glass epoxy, which is inexpensive and versatile while having insulation properties or heat resistance from the electrodes. Furthermore, in order to supplement the heat dissipation properties of this resin body, a conductive member with high thermal conductivity such as aluminum, silver, or copper, or an insulating member with high thermal conductivity such as aluminum nitride or silicon nitride may be attached to the underside of the resin body.

[0069] Embodiment 5 The following describes a base member and a light emitting device, as well as a method for manufacturing a base member and a method for manufacturing a light emitting device, according to embodiment 5. The light emitting device of embodiment 5 includes a plurality of light emitting elements 301 on a base member 310, and the base member 310 of embodiment 5 is a base member 310 on which a plurality of light emitting elements 301 can be mounted, and includes various forms described below.

[0070] First, a specific example of the light emitting device of the fifth embodiment will be described with reference to FIGS. 9A and 9B. The light-emitting device 300 of FIG. 9A includes a base member 310 and a plurality of light-emitting elements 301 mounted on a first surface of the base member 310. A positive electrode 312a and a negative electrode 312b are provided on the first surface of the base member 310, and the plurality of light-emitting elements 301 are connected between the positive electrode 312a and the negative electrode 312b. In the example shown in FIG. 9A, 36 light-emitting elements 301 are included, and are divided into three groups each including 12 light-emitting elements 301, with the 12 light-emitting elements 301 in each group connected in series. The positive electrode 312a includes a pad portion 322a, a lead portion 332a connected to the pad portion 322a, and a connection portion connected to the lead portion 332a. The negative electrode 312b includes a pad portion 322b, a lead portion 332b connected to the pad portion 322b, and a connection portion connected to the lead portion 332b. The p-side electrode of the light-emitting element 301 at the beginning of each group is connected to the connection part of the positive electrode 312a, and the n-side electrode of the light-emitting element 301 at the end of each group is connected to the connection part of the negative electrode 312b. In other words, three groups, each including 12 light-emitting elements 301 connected in series, are connected in parallel between the positive electrode 312a and the negative electrode 312b. Here, connections between the light-emitting elements 301 and between the electrodes 312a, 312b of the base member 310 and the light-emitting element 301 are made by wire bonding. In the example shown in FIGS. 9A and 9B, the light-emitting element 301 is a face-up light-emitting element including an n-side element electrode and a p-side element electrode on the upper surface, which is the light-emitting surface side. The light-emitting device shown in FIGS. 9A and 9B also has a protection element 342, such as a Zener diode, connected in parallel to three parallel-connected groups. While the light-emitting element is described here as a face-up type, a face-down type may also be used. That is, the light-emitting element is mounted face-down on the base member, and then a frame is formed to surround the light-emitting element. Then, an insulating film is applied to cover the first and second surfaces of the base member, the frame, and the light-emitting element. A sealing member is placed in the mounting area surrounded by the frame to cover the light-emitting element. Then, a laser is applied to the electrodes provided on the base member and covered with the insulating film to expose portions of the electrodes. In this manner, a light-emitting device using face-down light-emitting elements can be provided. The base member and the light emitting device according to the fifth embodiment and its modifications will be described below.

[0071] First, the base member will be described with reference to Figures 8A to 8D. Although the light emitting element is omitted here, a light emitting device can be made by arranging the light emitting element on this base member and then connecting the light emitting element to electrodes 312a and 312b with wires. The connection between the light emitting element and electrodes 312a and 312b can be made by electrically connecting pad portion 322a or lead portion 332a of electrode 312a on the outside of frame 350 that surrounds the mounting area of ​​the light emitting element to the element electrode of the light emitting element with a wire. Alternatively, before mounting the light-emitting element on the base member 310, an insulating film 30 is formed on the base member and electrodes by atomic layer deposition, and laser irradiation is performed on the area where the light-emitting element will be mounted to partially remove the insulating film 30. Laser irradiation may also be performed to remove the insulating film 30 at the area where the wire will be connected. The light-emitting element is mounted on the electrode from which the insulating film 30 has been removed. A frame is then formed to surround the mounting area where the light-emitting element is mounted. A sealing member containing a phosphor is then placed inside the frame in a plan view, i.e., in the mounting area where the light-emitting element is mounted. An insulating film may be formed again on the light-emitting element before the sealing member is placed, or an insulating film may be formed to cover the sealing member after the sealing member is placed. This arrangement makes it difficult for moisture from outside to reach the area where the initial insulating film was removed. Finally, or before placing the sealing member, laser irradiation is performed on the insulating film 30 covering the electrode, i.e., the pad portion, which will be connected to the external terminal, to remove it. A light-emitting device can also be manufactured using this configuration. Here, the base member 310 shown in Fig. 8B can be made of the same material as the base member used in the light-emitting device shown in Fig. 9A and Fig. 9B, and the base member shown in Fig. 8C and Fig. 8D is a modified form thereof. The base members 310 shown in Fig. 8B, Fig. 8C and Fig. 8D differ in the positional relationship between the frame body 350 and the insulating film 30, the positional relationship between the pad portion and the insulating film 30, etc., but have the same electrode structure.

[0072] -Explanation of base material- The base member 310 of this embodiment comprises a base 311 having a first surface and a second surface opposite to the first surface, electrodes 312a and 312b arranged on the first surface of the base 311, and an insulating film 30 covering the first and second surfaces of the base 311 and portions of the electrodes 312a and 312b. The base 311 may be made of a material selected from ceramics, glass epoxy, or other resins. As described above, a member with high thermal conductivity may be attached to the base 311 from the viewpoint of heat dissipation. The electrodes 312a and 312b are arranged on the first surface of the base 311. The pads 322a and 322b shown in FIG. 8A are provided as a pair at diagonal corners of the base 311, and the lead portions 332a and 332b are led out from the pads 322a and 322b along the diagonal line. For example, the pad 322a and the lead portion 332a may be the positive electrode 312a, and the pad 322b and the lead portion 332b may be the negative electrode 312b. A protective element 342 for element protection may be provided between the positive electrode 312a and the negative electrode 312b. A light-emitting element can be mounted on the first surface of the base member 310, which is the same surface as the first surface on which the electrodes 312a and 312b are arranged. That is, the base member 310 of the fifth embodiment can be used as a face-up mounting member in which the electrodes 312a, 312b and the light-emitting element are provided on the same surface. The insulating film 30 may be formed by atomic layer deposition, and may be made of, for example, aluminum oxide (Al2O3). Forming the insulating film 30 by atomic layer deposition allows the aluminum oxide to extend to the second surface of the substrate 311. The insulating film 30 covers the lead portions 332 (332a, 332b), but at least a portion of the pad portions 322a, 322b is exposed from the insulating film 30. The surface roughness of the pad portions 322a, 322b exposed from the insulating film 30 may be greater than the surface roughness of the lead portions 332 (332a, 332b) covered by the insulating film 30. The surface roughness Ra of the pad portions 322a, 322b exposed from the insulating film 30 may be 0.3 μm or more and 30 μm or less, preferably 0.3 μm or more and 3 μm or less. By making the surfaces of the pad portions 322a, 322b exposed from the insulating film 30 rougher than the surface roughness of the lead portions 332 (332a, 332b) covered by the insulating film 30, the adhesion between the pad portions 322a, 322b and solder can be improved when electrically connecting the pad portions 322a, 322b to the outside, for example, with solder. For example, it is preferable that the difference in surface roughness Ra between the lead portions 332a, 332b and the pad portions 322a, 322b is at least 0.1 μm, preferably 0.2 μm or more, and more preferably 0.5 μm or more. This makes it possible to make the surfaces of the lead portions 332a, 332b smooth while roughening the surfaces of the pad portions 322a, 322b.

[0073] In a preferred embodiment, the base member 310 has the surface of the base 311 exposed around the pad portions 322a and 322b, and the surface roughness of the exposed surface of the base 311 may be greater than the surface roughness of the surface of the base 311 covered with the insulating film 30. That is, in FIGS. 8B to 8C, the surface roughness of the exposed base portion 312 around the pad portions 322a and 322b is greater than the surface roughness of the base 311 covered with the insulating film 30. By increasing the surface roughness of the exposed base portion 312, it is possible to suppress the wetting and spreading of solder and make it easier for the solder to return to the pad portions. Therefore, it is easier for the solder to remain on the pad portions when soldering to the pad portions 322a and 322b. Instead of exposing the entire pads 322a, 322b from the insulating film 30, the pads 322a, 322b may be partially exposed from the insulating film 30 (FIG. 8D). In this case, the surface roughness of the pads 322a, 322b exposed from the insulating film 30 is greater than the surface roughness of the pads 322a, 322b not exposed from the insulating film 30, i.e., the surface roughness of the pads 322a, 322b covered with the insulating film 30. Even in this embodiment, when electrically connecting the pads 322a, 322b to the outside with, for example, solder, the adhesion between the pads 322a, 322b and the solder can be improved.

[0074] In a preferred embodiment, the base member 310 may include a frame 350 surrounding a mounting area for mounting a light-emitting element. While FIG. 8A shows an example of the frame 350, the frame 350 is circular in plan view, it may also be elliptical or polygonal, such as a square, pentagon, hexagon, or octagon. Furthermore, a single frame may be divided into two or more shapes, such as a semicircle, sector, triangle, or square, or multiple frames may be combined. In other words, a single light-emitting device may have multiple mounting areas surrounded by a frame, rather than just one. Phosphors exhibiting different emission colors may be appropriately arranged in the multiple mounting areas. This allows for various emission colors to be achieved by adjusting the color. The frame 350 may be made of a thermosetting resin, such as a silicone resin, an epoxy resin, or a modified silicone resin. Furthermore, the thermosetting resin may be mixed with aluminum oxide, titanium oxide, silicon oxide, or the like. By mixing aluminum oxide, titanium oxide, etc. into thermosetting resin, for example, when manufacturing a light emitting device in which a light emitting element is placed inside a frame body 350, light emitted sideways from the light emitting element can be reflected by the frame body 350 and emitted upward, thereby increasing the light extraction efficiency of the light emitting device.

[0075] In a preferred embodiment, the frame 350 may be provided on the insulating film 30 ( FIG. 8B ). Forming the frame 350 on the insulating film 30 can improve the adhesion of the frame. Furthermore, when the frame 350 is formed on the insulating film 30 formed by atomic layer deposition, the dense insulating film formed by atomic layer deposition smoothes the surface of the insulating film, making it difficult for the resin of the frame to spread (bleed), and the edges of the frame 350 can be made sharp. As a result, the ratio of the height to the width of the frame 350 can be increased when the frame 350 is formed on a substrate covered with an insulating film compared to when the frame 350 is formed on a substrate not covered with an insulating film. In other words, when the frame 350 is formed on a substrate covered with an insulating film, a frame with a narrow width and a high height can be formed. Instead of forming the frame body 350 on the insulating film, the insulating film 30 may be provided after the frame body 350 is formed (FIG. 8C).

[0076] Next, a light emitting device including the above-mentioned base member will be described. -Explanation of the light-emitting device- The light emitting device 300 of this embodiment includes the above-described base member 310 and a light emitting element 301 provided in a mounting area. The mounting area provided in the base member 310 refers to the inner area surrounded by a frame 350 in a plan view. In the light-emitting device 300 shown in FIG. 9A , which illustrates one specific example described above, multiple light-emitting elements 301 are arranged in a mounting area, and adjacent light-emitting elements 301 are electrically connected by conductive members 311 a and 311 b. In this specific example, the conductive members 311 a and 311 b are wires, and the n-side and p-side electrodes between the face-up mounted light-emitting elements are connected by wire bonding. The conductive members 311 a and 311 b are conductive wires that have low electrical resistance and are easy to process, such as gold, silver, copper, aluminum, or alloys thereof. When using conductive wires, it is preferable to protect the wires with a thermosetting sealing resin such as silicone resin, epoxy resin, or modified silicone resin. In the light-emitting device 300 shown in FIGS. 9A and 9B , conductive wires are used as the conductive members 311 a and 311 b. However, light-emitting elements having n-side and p-side electrodes on the surface opposite the light-emitting surface may also be flip-chip mounted. As described above in the description of the base member, in the light emitting device 300 of this embodiment, the surface roughness of the pad portions 322a, 322b exposed from the insulating film 30 is greater than the surface roughness of the pad portions 322a, 322b covered by the insulating film 30 or the surface roughness of the lead portions 332 (332a, 332b) covered by the insulating film 30. Therefore, when the pad portions 322a, 322b are electrically connected to the outside, for example by solder, the adhesion between the pad portions 322a, 322b and the solder can be improved. Here, the surface roughness Ra of the pad portions 322a and 322b exposed from the insulating film 30 may be set to 0.3 μm or more and 30 μm or less, preferably 0.3 μm or more and 3 μm or less.

[0077] A suitable light-emitting device 300 may include a frame 350 provided around a plurality of light-emitting elements 301. The frame 350 may be provided in advance on a base member before mounting the light-emitting elements 301, or the frame 350 may be provided around the light-emitting elements 301 after mounting the light-emitting elements 301 on a base member that does not include a frame. FIGS. 9A and 9B show a specific example in which the frame 350 is provided around the light-emitting elements 301 after mounting the light-emitting elements 301 on a base member 310 that does not include a frame. As described above, the frame 350 may be made of a thermosetting resin mixed with aluminum oxide, titanium oxide, silicon oxide, or the like. By providing the frame 350, light from the light-emitting elements 301 can be appropriately reflected.

[0078] A suitable light-emitting device 300 may further include a sealing member 360 that seals the area surrounded by the frame 350. The sealing member 360 is an electrically insulating member that is transmissive to light emitted from the light-emitting element 301. A material that is fluid before solidification is preferred. The sealing member 360 can be easily formed by applying the material and then curing it, taking advantage of its fluidity before solidification. A light-transmitting resin with a light transmittance of 70% or more is preferably selected for the sealing member 360. Examples of light-transmitting resins include silicone resin, modified silicone resin, epoxy resin, phenolic resin, polycarbonate resin, acrylic resin, TPX resin, polynorbulmene resin, and hybrid resins containing one or more of these resins. Silicone resins are particularly preferred because they have excellent heat resistance and light resistance and experience little volumetric shrinkage after solidification. Dimethylsilicone resins are particularly preferred because of their excellent heat resistance and light resistance. The sealing member 360 may contain a phosphor that receives light from the light-emitting element 301, becomes excited, and converts the light into a different wavelength. A fluoride phosphor may be used as an example of the phosphor to enhance color rendering. Examples of fluoride phosphors include K2SiF6:Mn (KSF phosphor) and K2(Si,Al)F6:Mn (KSAF phosphor). In the formula representing the phosphor composition, the elements before the colon (:) represent the elements constituting the host crystal and their molar ratios, and the elements after the colon (:) represent an activator element. In the formula representing the phosphor composition, multiple elements separated by a comma (,) represent that at least one of these multiple elements is contained in the composition, and two or more elements may be contained in combination. The phosphor contained in the sealing member is not limited to a fluoride phosphor; other phosphors may be used depending on the emission peak wavelength of the light-emitting element. Furthermore, the sealing member 360 may contain a light diffusing material (for example, an inorganic material such as titanium oxide) that diffuses light over a wide range. By including a light diffusing material, it is possible to suppress uneven light emission in the light emitting region.

[0079] In a preferred light emitting device 300, the insulating film 30 may cover the frame body 350 and / or the sealing member 360. That is, a light emitting device having a configuration different from that shown in Fig. 9B may be provided in which the insulating film 30 covers the frame body 350 as shown in Fig. 9C, or in which the insulating film 30 covers the frame body 350 and the sealing member 360 as shown in Fig. 9D. By using such a covering configuration with the insulating film 30, it is possible to reduce the intrusion of moisture due to atmospheric humidity or the like into the frame body 350, the sealing member 360, and the light emitting element 301. Furthermore, as a light emitting device that reduces the intrusion of moisture into the light emitting device, the light emitting device shown in Fig. 9B may further include a sealing member 362 on the outside of sealing member 360. For example, as shown in Fig. 9E, the sealing member may be made of multiple layers (for example, two layers), and outer sealing member 362 may be made of a material with lower moisture permeability than inner sealing member 361. 9F , another light emitting device may be configured such that a frame 352 and a sealing member 362 are disposed in addition to a frame 351 and a sealing member 361, thereby reducing the intrusion of moisture into the light emitting device. The phosphors contained in the sealing member 361 and the phosphors contained in the sealing member 362 may each emit light of a different color. For example, the phosphor contained in the sealing member 361 may be a red-emitting phosphor such as a KSF phosphor, a KSAF phosphor, a CASN phosphor, or a SCASN phosphor, and the phosphor contained in the sealing member 362 may be a green to yellow-emitting phosphor such as a YAG phosphor, a silicate phosphor, a G-LuAG phosphor, or a TAG phosphor. 9G, a light-transmitting member 370 with low moisture permeability may be disposed on a sealing member 360 to reduce moisture from entering the light-emitting device. Examples of the light-transmitting member 370 with low moisture permeability include glass and hydrophobic resin. Furthermore, as another light emitting device, for example, the frame body 350 and / or the sealing member 360 of the light emitting device shown in FIG. 9B may be further coated with an insulating film to reduce the intrusion of moisture into the light emitting device.

[0080] Next, the manufacturing methods for these will be described. First, the manufacturing method for the light emitting device will be described. -Description of the manufacturing method of the light-emitting device- In the light emitting device 300 of this embodiment, in the manufacturing method of the above-mentioned base member not including a frame body, the preparation steps include 2-1. Pre-mounting step, 2-2. Light emitting element mounting step, and 2-3. Insulating film forming step. Furthermore, the manufacturing method of the light emitting device includes a frame body forming step of forming a frame body 350 that surrounds the light emitting element 301. The method for manufacturing the light emitting device of this embodiment will be described in more detail below.

[0081] 2-1. Pre-mounting process In the pre-mounting process, a structure is prepared that has electrodes 312a and 312b including pad portions 322a and 322b to be connected to the outside and lead portions 332 (332a and 332b) led out from the pad portions 322a and 322b.

[0082] 2-2. Light emitting element mounting process In the light-emitting element mounting step, light-emitting elements 301 are mounted in the mounting area of ​​the base member 310 prepared in the pre-mounting step. In the light-emitting device shown in Fig. 9A as an example, multiple light-emitting elements 301 are mounted in the mounting area, and the multiple mounted light-emitting elements 301 are electrically connected to each other using conductive wires.

[0083] 2-3. Insulating film formation process In the insulating film forming step, the base member 310, the light emitting element 301, and the electrodes 312a and 312b are covered with an insulating film 30. The insulating film 30 is preferably formed by atomic layer deposition. As an example of the insulating film 30, aluminum oxide may be formed.

[0084] After the above-mentioned preparation steps (2-1. Pre-mounting step, 2-2. Light-emitting element mounting step, 2-3. Insulating film forming step), an electrode exposing step is carried out. <Electrode exposure process> The electrode exposing step of this embodiment is performed to expose the pad portions 322a and 322b of the electrodes 312a and 312b from the insulating film 30. That is, the pad portions 322a and 322b are irradiated with laser light to remove the insulating film 30 on the pad portions 322a and 322b. At this time, a pulsed laser is preferably used as the laser light, and the pulse energy of the pulsed laser light is set in the range of, for example, 1 μJ to 1000 J, preferably 2 μJ to 300 μJ, more preferably 3 μJ to 100 μJ, and even more preferably 3 μJ to 10 μJ. The pulse width of the laser light is set in the range of, for example, 100 femtoseconds to 2000 femtoseconds, preferably 100 femtoseconds to 1000 femtoseconds, and even more preferably 100 femtoseconds to 500 femtoseconds. As described above, in the electrode exposing step of this embodiment, the pad portions 322a, 322b of the electrodes 312a, 312b are exposed from the surface of the insulating film 30, while the lead portions 332 (332a, 332b) of the electrodes 312a, 312b are not exposed from the insulating film 30. Therefore, since the surface roughness of the pad portions 322a, 322b is greater than the surface roughness of the lead portions 332 (332a, 332b), when the pad portions 322a, 322b are electrically connected to the outside with, for example, solder, the adhesion between the pad portions 322a, 322b and the solder can be improved. Furthermore, in the electrode exposing step, in order to completely expose the pad portions 322a, 322b in a plan view, it is preferable to irradiate the laser light onto an area larger than the area of ​​the pad portions 322a, 322b. By setting the irradiation area of ​​the laser light in this manner, it is possible to form the base exposed portion 312 where the base 311 is exposed. Since the surface roughness of the base exposed portion 312 is rougher than the surface roughness of the surface of the base 311 covered with the insulating film 30, the wettability of the surface is improved, making it easier to retain the solder on the pad portions when soldering to the pad portions 322a, 322b. In the electrode exposing step, it is preferable that the laser beam scans the entire surface of the pad portions 322a and 322b at least once in a plan view. That is, the surfaces of the pad portions 322a and 322b may be roughened along the scanning direction of the laser beam. For example, the pad portions 322a and 322b may have linear grooves formed in the same direction, or may have grooves formed in a grid pattern.

[0085] A suitable method for manufacturing a light emitting element may include a frame forming step of forming a frame 350 that surrounds the mounted light emitting element 301 . <Frame formation process> The frame 350 may be made of a thermosetting resin such as a silicone resin, an epoxy resin, or a modified silicone resin. Furthermore, the thermosetting resin may be mixed with aluminum oxide, titanium oxide, silicon oxide, or the like. The frame 350 may be formed by, for example, a method of drawing while discharging resin with a dispenser, a resin printing method, transfer molding, or compression molding. By forming the frame 350 using such a method, when light is irradiated from a light-emitting element mounted inside the frame 350, the amount of light can be increased by the light reflection by the frame 350.

[0086] Here, the frame body 350 may be formed after the insulating film 30 is formed. In this case, the insulating film 30 and the frame body 350 have a positional relationship as shown in Fig. 9B, for example. By forming the frame body 350 on the insulating film 30 in this way, it is possible to improve the adhesion with the frame body 350 compared to when the frame body is formed on a metal.

[0087] Furthermore, the frame body 350 may be formed before the insulating film 30 is formed. In this case, the insulating film 30 and the frame body 350 have a positional relationship such as that shown in FIG. 9C. By forming the insulating film 30 on the frame body 350 in this manner, it is possible to reduce the intrusion of moisture due to atmospheric humidity into the frame body 350. For example, even if a phosphor that is sensitive to moisture is used and the phosphor deteriorates, causing the phosphor components to dissolve, corrosion of the electrode can be suppressed.

[0088] A suitable method for manufacturing a light emitting device may further include a sealing step of sealing the area surrounded by the frame 350 after the frame formation step. <Sealing process> The sealing member 360 is preferably made of the above-mentioned light-transmitting resin and may further contain a phosphor (e.g., a KSF phosphor or a KSAF phosphor) and / or a light diffusing material (e.g., an inorganic material such as titanium oxide). Because the sealing member 360 has fluidity before solidification, sealing may be achieved by supplying a fluid material to the area surrounded by the frame 350 and solidifying it after supply. By sealing the mounting area with the sealing member 360 in this manner, the light emitting element 301 and the conductive wires electrically connecting the light emitting element 301 can be protected. Furthermore, by including a phosphor or a light diffusing material in the sealing member 360, the light emitting performance of the light emitting device can be improved.

[0089] Here, the insulating film forming step and the electrode exposing step may be performed after the sealing step. In this case, the insulating film 30, the frame 350, and the sealing member 360 are positioned as shown in FIG. 9D. By forming the insulating film 30 so as to cover the frame 350 and the sealing member 360 in this manner, it is possible to reduce the intrusion of moisture due to atmospheric humidity into the frame 350 and the sealing member 360.

[0090] In another embodiment of the method for manufacturing a light-emitting device, a light-emitting device (Figure 9E) may be manufactured in which the sealing member 360 is made of multiple layers (for example, two layers) in the sealing process, and the outer sealing member 360 is made of a material with lower moisture permeability than the inner sealing member 360. As another method for manufacturing a light emitting device, a light emitting device (Figure 9F) may be manufactured by performing, after the sealing step, another frame body forming step of forming another frame body 350 on the sealing member and another sealing step of sealing the area surrounded by the other frame body. As another method for manufacturing a light-emitting device, a light-emitting device (FIG. 9G) may be manufactured in which a light-transmitting member 370 with low moisture permeability (e.g., glass, fluororesin, etc.) is placed directly or indirectly on the sealing member after the sealing process, thereby reducing the intrusion of moisture into the light-emitting device.

[0091] The method for manufacturing a light emitting device according to this embodiment (a method for manufacturing a light emitting device having a base member and a light emitting element electrically connected to an electrode) has been described above, but individual process elements of the above manufacturing method may be used to form a "method for manufacturing a base member." That is, the method for manufacturing a base member described in embodiment 5 may include preparing a structure including an electrode having a pad portion connected to the outside and an extraction portion extracted from the pad portion in a preparation step, and exposing pad portions 322a and 322b from insulating film 30 in an electrode exposing step.

[0092] In addition, in the preparation step, a structure further including a frame surrounding the mounting area may be prepared. In addition, in the preparation step, the frame 350 may be formed after the insulating film 30 is formed (for example, the base member shown in FIG. 8B). In addition, in the preparation step, the frame 350 may be formed before the insulating film 30 is formed (for example, the base member shown in FIG. 8C).

[0093] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to these embodiments. As long as the technical concept of the present disclosure is encompassed, appropriate changes and additions to components are possible.

[0094] 100,200,300 Light-emitting device 1,101,301 Light-emitting elements 1a, 1b Element electrodes 311a, 311b Conductive member 2, 342 protection element 10 Mounting board 11 Circuit Board 12a, 12b, 112a, 112b External connection electrodes 12aa,112aa,12bb,112bb extension part 13a, 13b, 113a, 113b Element connection electrodes 14a,14b,114a,114b Through electrode 312a, 312b electrode 322a, 322b Pad section 332, 332a, 332b Drawer section 16 Heat dissipation part 21a, 21b Connection members 30 insulating film 110 packages 111 Ceramic substrate 310 Base member 311 Base 312 Exposed base part 350,351,352 Frame 360, 361, 362 Sealing member 370 Translucent material 150 Translucent lid 151 Spacer 230 Distributed Bragg Reflector 230a,230b opening 230A,230B opening

Claims

1. a preparation step of preparing a structure including a substrate having a first surface and a second surface opposite to the first surface, an electrode disposed on the first surface of the substrate, and an insulating film covering the first surface and the second surface of the substrate and the electrode; an electrode exposing step of irradiating the insulating film on the electrode with laser light to expose the electrode from the insulating film.

2. a preparation step of preparing a structure including a ceramic body that contains a metal element as a constituent element and forms a substrate, an electrode disposed on a first surface of the ceramic body, and an insulating film that covers the first surface and the electrode; an electrode exposing step of irradiating the electrode from above the insulating film with laser light that is transmitted through the insulating film and absorbed by the electrode, thereby removing a portion of the electrode so that the ceramic body directly below the electrode is not exposed from the electrode.

3. 3. The method for manufacturing a base member according to claim 1, wherein the wavelength of the laser light is set in the range of 250 nm or more and 550 nm or less and the laser light is irradiated.

4. The method for manufacturing a base member according to any one of claims 1 to 3, wherein the pulse energy of the laser light is set in the range of 1 µJ or more and 1000 J or less and the laser light is irradiated.

5. The method for manufacturing a base member according to any one of claims 1 to 4, wherein the laser beam is irradiated with a pulse width set in the range of 100 femtoseconds or more and 2000 femtoseconds or less.

6. The method for manufacturing a base member according to any one of claims 1 to 5, wherein the laser beam is irradiated with a spot diameter of the laser beam set in the range of 15 µm to 60 µm.

7. The method for manufacturing a base member according to claim 6, wherein the laser is scanned so that the irradiated areas of the laser light partially overlap each other.

8. 8. The method for manufacturing a base member according to claim 2, or any one of claims 3 to 7 that rely on claim 2, wherein the laser light is irradiated so that the thickness of the electrode material removed from the surface of the electrode is 200 nm or less.

9. The method for manufacturing a base member according to any one of claims 1 to 8, wherein the surface of the electrode contains gold.

10. 10. The method for manufacturing a base member according to claim 1, wherein the insulating film includes at least one selected from the group consisting of silicon oxide, aluminum oxide, niobium oxide, tantalum oxide, aluminum nitride, silicon nitride, and silicon nitride oxide.

11. The method for manufacturing a base member according to any one of claims 1 to 10, wherein the insulating film is a single-layer film or a multi-layer film.

12. The method for manufacturing a base member according to claim 2 or any one of claims 3 to 11 that rely on claim 2, wherein the ceramic body containing a metal element is either an aluminum nitride substrate or an aluminum oxide substrate.

13. In the preparation step, the electrode includes a pad portion connected to an external device and a lead portion led out from the pad portion, The method for manufacturing a base member according to claim 1 , wherein the pad portion is exposed from the insulating film in the electrode exposing step.

14. The method for manufacturing a base member according to claim 1 , wherein the preparing step further includes preparing a structure including a frame that surrounds the mounting area.

15. The method for manufacturing a base member according to claim 14 , wherein in the preparation step, the frame is formed after the insulating film is formed.

16. The method for manufacturing a base member according to claim 14 , wherein in the preparation step, the frame is formed before the insulating film is formed.

17. A method for manufacturing a light-emitting device having a base member manufactured by the method according to any one of claims 1 to 16 and a light-emitting element electrically connected to the electrode, comprising: The method for manufacturing a light emitting device further comprises, in the preparation step or after the electrode exposing step, a light emitting element mounting step of electrically connecting the electrode and the light emitting element.

18. In the preparation step, an element connection electrode is further prepared, the element connection electrode being disposed on the second surface of the base member and electrically connected to the electrode; The method for manufacturing a light emitting device according to claim 17 , wherein the element connection electrode and the light emitting element are electrically connected in the light emitting element mounting step.

19. A method for manufacturing a light-emitting device having a base member manufactured by the method according to any one of claims 1 to 13 and a light-emitting element electrically connected to the electrode, comprising: A method for manufacturing a light emitting device, comprising: a frame forming step of forming a frame surrounding the light emitting element.

20. The method for manufacturing a light emitting device according to claim 19 , further comprising, after the frame forming step, a sealing step of sealing a region surrounded by the frame.

21. a substrate having a first surface and a second surface opposite the first surface; an electrode including a pad portion and an extraction portion electrically connected to the pad portion, the electrode being disposed on the first surface of the base; an insulating film covering the lead portion, At least a portion of the pad portion is exposed from the insulating film, and the surface roughness of the exposed portion of the pad portion is greater than the surface roughness of the lead portion.

22. a substrate having a first surface and a second surface opposite the first surface; an electrode including a pad portion and an extraction portion electrically connected to the pad portion, the electrode being disposed on the first surface of the base; an insulating film covering the lead portion, A base member, wherein a portion of the pad portion is exposed from the insulating film, and the surface roughness of the pad portion at the exposed portion is greater than the surface roughness of the pad portion covered with the insulating film.

23. 23. The base member according to claim 21 or 22, wherein the surface of the base is exposed around the pad portion, and the surface roughness of the exposed surface of the base is greater than the surface roughness of the surface of the base coated with the insulating film.

24. The base member according to any one of claims 21 to 23, further comprising a frame surrounding the mounting area.

25. The base member according to claim 24 , wherein the frame is provided on the insulating film.

26. A light emitting device comprising: the base member according to any one of claims 21 to 25; and a light emitting element provided in the mounting region.

27. A light emitting device comprising: a base member provided with the frame according to claim 24 or 25; and a light emitting element provided in a mounting region, The light emitting device further comprises a sealing member that seals the area surrounded by the frame body.

28. 28. The light emitting device according to claim 27, comprising the base member according to claim 24, wherein the insulating film covers the frame and / or the sealing member.

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