Electronic device and operation method for electronic device

Abstract

To provide an electronic device capable of responding to a junction defect between chips, and an operation method for an electronic device.SOLUTION: An electronic device 1 comprises: a first chip 101 including a first substrate 10 having a first face 10A, a control circuit 11 and a first external connection part 61; a second chip 102 including a second substrate 20 having a second face 20A, which is opposed to the first face in a first direction Z, and an electrode 70; and a plurality of junction parts 40 provided between the first face and the second face, electrically connecting the control circuit and the electrode and joining the first chip and the second chip. A monitor circuit which is provided outside of the electronic device is connected to the first external connection part, 0 V is applied to the first external connection part via the monitor circuit in a state where a write voltage is applied to the electrode, and a current flowing to the control circuit is detected by the monitor circuit, such that a junction quality of the junction parts is determined.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION Embodiments of the present invention relate to electronic devices and methods of operating electronic devices. [Background technology]

[0002] Devices are known in which two chips are joined by metal-to-metal bonding. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-282038 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments of the present invention is to provide an electronic device and an operating method of the electronic device that can deal with poor bonding between chips. [Means for solving the problem]

[0005] According to an embodiment of the present invention, an electronic device comprises a first chip having a first substrate having a first surface and a control circuit, a second chip having a second substrate having a second surface facing the first surface in a first direction and an electrode, and a plurality of junctions provided between the first surface and the second surface, electrically connecting the control circuit and the electrode and joining the first chip and the second chip, wherein the second substrate has a diode electrically connected to the electrode and the junction, and the direction from the diode to the electrode is the forward direction, and the direction from the control circuit to the diode via the junction is the reverse direction. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic diagram illustrating a configuration of an electronic device according to a first embodiment. [Figure 2] FIG. 1 is a schematic diagram illustrating a configuration of an electronic device according to a first embodiment. [Figure 3] FIG. 10 is a schematic cross-sectional view showing the configuration of an electronic device according to a second embodiment. [Figure 4] FIG. 10 is a schematic plan view showing the configuration of the first surface side of the first substrate in the electronic device of the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Each embodiment will be described below with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. Furthermore, identical or similar elements are given the same reference numerals.

[0008] [First embodiment] 1, the electronic device 1 of the first embodiment includes a first chip 101, a second chip 102, and a plurality of bonding portions 40. The plurality of bonding portions 40 are provided between the first chip 101 and the second chip 102. The first chip 101 and the second chip 102 are bonded to each other via the plurality of bonding portions 40 and are stacked in the first direction Z.

[0009] The first chip 101 has a first substrate 10. The first substrate 10 has a first surface 10A. The first substrate 10 also has a control circuit 11 and a voltage write circuit 12 including semiconductor transistors formed on the first surface 10A side. The control circuit 11 and the voltage write circuit 12 have a switching function using the semiconductor transistors. The voltage write circuit 12 may be provided outside the first chip 101. The first substrate 10 is, for example, a silicon substrate.

[0010] The second chip 102 has a second substrate 20 and an electrode 70. The second substrate 20 has a second surface 20A that faces the first surface 10A of the first substrate 10 in the first direction Z. The second substrate 20 is, for example, a silicon substrate.

[0011] The plurality of joints 40 are electrically connected to the control circuit 11, the voltage write circuit 12, and the electrodes 70, and also join the first chip 101 and the second chip 102 together.

[0012] The joint portion 40 has a first metal portion 41 and a second metal portion 42. The first metal portion 41 is provided on the first surface 10A and is electrically connected to the control circuit 11 and the voltage write circuit 12. The second metal portion 42 is provided on the second surface 20A and is electrically connected to the electrode 70. The first metal portion 41 and the second metal portion 42 face each other in the first direction Z and are joined to each other. The joint between the first metal portion 41 and the second metal portion 42 is, for example, a gold-to-gold joint.

[0013] A first external connection portion 61 and a second external connection portion 62 are provided on the first surface 10A of the first substrate 10. The first external connection portion 61 and the second external connection portion 62 are provided on the first surface 10A in an area that does not face the second surface 20A of the second substrate 20. The first external connection portion 61 is electrically connected to the control circuit 11. The second external connection portion 62 is electrically connected to the voltage write circuit 12. The first external connection portion 61 and the second external connection portion 62 can be formed from the same material and in the same process as the first metal portion 41.

[0014] The second substrate 20 further includes a diode D. The diode D includes a pn junction of a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type provided on the second substrate 20. In this specification, for example, the first conductivity type is defined as p-type and the second conductivity type is defined as n-type. Alternatively, the first conductivity type may be n-type and the second conductivity type may be p-type.

[0015] The diode D is electrically connected to the electrode 70 and the junction 40. The anode of the diode D is electrically connected to the junction 40D, which is one of the multiple junctions 40 and is electrically connected to the voltage write circuit 12. The junction 40D, which is electrically connected to the voltage write circuit 12, is provided separately from the junction 40, which is electrically connected to the electrode 70 and the control circuit 11. The cathode of the diode D is electrically connected to the electrode 70 and the second metal portion 42. The direction from the diode D toward the electrode 70 is the forward direction, and the direction from the control circuit 11 toward the diode D via the junction 40 is the reverse direction. The direction from the voltage write circuit 12 toward the diode D via the junction 40D is the forward direction.

[0016] (Normal operation of electronic devices) During normal operation of the electronic device 1, a positive operating voltage (e.g., 5 V) or 0 V is applied to the first external connection 61. The voltage applied to the first external connection 61 is applied to the electrode 70 via the control circuit 11 and the joint 40. In other words, the first chip 101 can control the voltage of the electrode 70 of the second chip 102.

[0017] The electronic device 1 has a plurality of first external connection parts 61, a plurality of control circuits 11, a plurality of junction parts 40, a plurality of electrodes 70, and a plurality of diodes D, and includes a plurality of systems in which these are electrically connected. There may be at least one each of the second external connection part 62, the voltage write circuit 12, and the junction part 40D. There may also be a plurality of junction parts 40D. The second external connection part 62, the voltage write circuit 12, and the junction part 40D are electrically connected to the anodes of the plurality of diodes D.

[0018] If there is a joint 40C among the multiple joints 40 where the first metal part 41 and the second metal part 42 are poorly joined, an electrode 70 will be generated that cannot control the voltage applied to the first external connection part 61. According to this embodiment, even if there is a joint 40C where the joint is poorly joined, it is possible to deal with it as described below.

[0019] (Voltage write operation) Before the electronic device 1 is put into normal operation, a voltage write operation, which will be described below, is performed. First, as shown in FIG. 1, a positive write voltage (e.g., 5 V) that is the same as the operating voltage is applied to the second external connection portion 62. This write voltage is applied to the electrode 70 via the voltage write circuit 12, the junction 40D, and the diode D. The write voltage is applied to the multiple electrodes 70 collectively via the multiple diodes D. The potentials of the multiple electrodes 70 are collectively written to a desired potential (e.g., 5 V).

[0020] A monitor circuit provided outside the electronic device 1 is connected to the first external connection portion 61. With the write voltage applied to the electrode 70, 0 V is applied to the first external connection portion 61 via the monitor circuit, and the current flowing through the control circuit 11 is detected by the monitor circuit. From the detection result, it is possible to determine whether the bonding of the bonding portion 40 is good or bad.

[0021] The current from the second external connection part 62 flows through the control circuit 11 via the diode D and the good junction 40. If there is a bad junction 40C, the current from the second external connection part 62 is blocked by the bad junction 40C and does not flow through the control circuit 11. The bad junction 40C, in other words, the electrode 70 whose voltage cannot be controlled by the control circuit 11, can be identified based on the presence or absence or magnitude of the current flowing through the control circuit 11.

[0022] After applying a write voltage to the electrode 70 from the second external connection part 62 via the voltage write circuit 12 and diode D, 0 V is applied to the second external connection part 62 while maintaining the state in which 0 V is applied to the first external connection part 61, as shown in Fig. 2. As a result, the potential of the electrode 70 connected to the good joint 40 becomes 0 V through the joint 40, the control circuit 11, the first external connection part 61, and the monitor circuit. The potential of the electrode 70 connected to the poorly joined joint 40C becomes floating, and the write voltage is maintained.

[0023] In normal operation after the write operation, the voltage of the electrode 70 connected to the good-bonded joint 40 can be controlled to an operating voltage (e.g., 5 V) or 0 V depending on the voltage applied to the first external connection 61. In normal operation, the voltage of the electrode 70 connected to the poor-bonded joint 40C is maintained at the voltage written in the write operation, regardless of the voltage applied to the first external connection 61. Because the write voltage is the same as the operating voltage during normal operation, in normal operation the voltage of the electrode 70 connected to the poor-bonded joint 40C is maintained at the operating voltage (e.g., 5 V), regardless of the voltage applied to the first external connection 61. This ensures that the operation of the electrode 70 connected to the poor-bonded joint 40C is not impaired during normal operation.

[0024] The technology of this embodiment can also be applied to, for example, a sensor element that turns on when a voltage is applied to a switch in a data reading circuit. In such an element, it is preferable to keep it on because data can be accessed.

[0025] [Second embodiment] 3, the electronic device 2 of the second embodiment includes a first chip 201, a second chip 202, and a plurality of bonding portions 40. The plurality of bonding portions 40 are provided between the first chip 201 and the second chip 202. The first chip 201 and the second chip 202 are bonded to each other via the plurality of bonding portions 40 and are stacked in the first direction Z.

[0026] The first chip 201 has a first substrate 10. The first substrate 10 has a first surface 10A. The first substrate 10 also has a control circuit 11 and a voltage write circuit 12 including semiconductor transistors formed on the first surface 10A side. The control circuit 11 and the voltage write circuit 12 have a switching function using the semiconductor transistors. The voltage write circuit 12 may be provided outside the first chip 201. The first substrate 10 is, for example, a silicon substrate.

[0027] The first chip 201 further has a wiring section 30 provided on the first surface 10A. The wiring section 30 has an insulating layer 31 and a wiring layer provided in the insulating layer 31. The wiring layer has a first wiring layer 32A and a second wiring layer 32B. The wiring section 30 has, for example, a multi-layer wiring structure, and different wiring layers are electrically connected to each other by conductive vias.

[0028] The second chip 202 has a second substrate 20, a first electrode 71, and a second electrode 72. The second substrate 20 has a second surface 20A facing the wiring unit 30 in the first direction Z. The second substrate 20 is, for example, a silicon substrate. The wiring unit 30 is located between the first surface 10A and the second surface 20A in the first direction Z.

[0029] A plurality of through holes H penetrate second chip 202, wiring portion 30, and first chip 201 in first direction Z. First substrate 10 and second substrate 20 are supplied with, for example, a ground potential.

[0030] A first conductive film 91 and a second conductive film 92 are provided on the second surface 20A of the second substrate 20, with an insulating film 50 interposed therebetween. A first electrode 71 and a second electrode 72 are provided on the inner surface of the portion of the through hole H that penetrates the second substrate 20, with the insulating film 50 interposed therebetween. The insulating film 50 is, for example, a silicon oxide film. The insulating film 50 is provided between the second surface 20A and the first conductive film 91, between the second surface 20A and the second conductive film 92, between the inner surface of the through hole H and the first electrode 71, and between the inner surface of the through hole H and the second electrode 72.

[0031] The first electrode 71 and the second electrode 72 are separated from each other in the circumferential direction of the inner surface of the through hole H. The first conductive film 91 and the second conductive film 92 are separated from each other on the insulating film 50. The first electrode 71 is electrically connected to the first conductive film 91. The second electrode 72 is electrically connected to the second conductive film 92. In normal operation, different potentials are applied to the first electrode 71 and the second electrode 72.

[0032] A third conductive film 81, a fourth conductive film 82, a fifth conductive film 83, and a sixth conductive film 84 are provided separately from one another on the wiring unit 30. The third conductive film 81 and the fifth conductive film 83 are electrically connected to the control circuit 11 via conductive vias in the wiring unit 30 and a first wiring layer 32A. The fourth conductive film 82 and the sixth conductive film 84 are electrically connected to the voltage write circuit 12 via conductive vias in the wiring unit 30 and a second wiring layer 32B.

[0033] The multiple bonding portions 40 electrically connect the first chip 201 and the second chip 202 and also bond the first chip 201 and the second chip 202 together. The bonding portions 40 are formed by bonding metal portions provided on the first chip 201 side and the second chip 202 side, respectively. The multiple bonding portions 40 include a first bonding portion 40A and a second bonding portion 40B. The multiple first bonding portions 40A and the multiple second bonding portions 40B are provided between the wiring portion 30 and the second surface 20A of the second chip 202.

[0034] The first bonding portion 40A has a first metal portion 41 and a second metal portion 42. The first metal portion 41 contacts the third conductive film 81 and is electrically connected to the control circuit 11 via the third conductive film 81, the conductive via, and the first wiring layer 32A. The second metal portion 42 contacts the first conductive film 91 and is electrically connected to the first electrode 71 via the first conductive film 91. The first metal portion 41 and the second metal portion 42 face each other in the first direction Z and are bonded to each other.

[0035] The second bonding portion 40B has a third metal portion 43 and a fourth metal portion 44. The third metal portion 43 is in contact with the fourth conductive film 82 and is electrically connected to the voltage write circuit 12 via the fourth conductive film 82, the conductive via, and the second wiring layer 32B. The fourth metal portion 44 is in contact with the second conductive film 92 and is electrically connected to the second electrode 72 via the second conductive film 92. The third metal portion 43 and the fourth metal portion 44 face each other in the first direction Z and are bonded to each other.

[0036] A first external connection portion 61 and a second external connection portion 62 are provided on the wiring portion 30. The first external connection portion 61 and the second external connection portion 62 are provided in an area of ​​the wiring portion 30 that does not face the second surface 20A of the second substrate 20. The first external connection portion 61 contacts the fifth conductive film 83 and is electrically connected to the control circuit 11 via the fifth conductive film 83, a conductive via, and the first wiring layer 32A. The second external connection portion 62 contacts the sixth conductive film 84 and is electrically connected to the voltage write circuit 12 via the sixth conductive film 84, a conductive via, and the second wiring layer 32B. The first external connection portion 61 and the second external connection portion 62 can be formed using the same material and in the same process as the first metal portion 41 and the third metal portion 43.

[0037] The second substrate 20 further has a diode D. A plurality of diodes D are provided on the second substrate 20 corresponding to the plurality of first electrodes 71. The diode D has a p-type first semiconductor layer 21 (p-type well) provided on the second substrate 20, and an n-type second semiconductor layer 22 provided in the first semiconductor layer 21. The first semiconductor layer 21 and the second semiconductor layer 22 form a pn junction. The first semiconductor layer 21 functions as an anode of the diode D, and the second semiconductor layer 22 functions as a cathode of the diode D.

[0038] The second semiconductor layer 22 is electrically connected to the first conductive film 91 through a conductive via that penetrates the insulating film 50 provided on the second surface 20A. Therefore, the cathode of the diode D is electrically connected to the first junction 40A through the first conductive film 91.

[0039] The second substrate 20 may also have a p-type third semiconductor layer 23 provided within the first semiconductor layer 21 and having a higher p-type impurity concentration than the first semiconductor layer 21. The third semiconductor layer 23 functions as a contact layer on the anode side of the diode D. The third semiconductor layer 23 is electrically connected to the second conductive film 92 through a conductive via that penetrates the insulating film 50 provided on the second surface 20A. Therefore, the anode of the diode D is electrically connected to the second junction 40B through the second conductive film 92.

[0040] The anode (first semiconductor layer 21) of the diode D is electrically connected to the second external connection portion 62 via the second junction 40B, the second wiring layer 32B, and the voltage write circuit 12. The cathode (second semiconductor layer 22) of the diode D is electrically connected to the first electrode 71 and the first junction 40A. The direction from the diode D to the first electrode 71 via the first conductive film 91 is the forward direction. The direction from the control circuit 11 to the diode D via the first junction 40A is the reverse direction. The direction from the voltage write circuit 12 to the diode D via the second junction 40B is the forward direction.

[0041] The electronic device 2 of the second embodiment can be used as a pixel array for deflecting electron beams in a multi-electron beam exposure apparatus that uses multiple electron beams to write a pattern on a resist on a substrate such as glass. The electron beams pass through the through-holes H. The electron beams passing through the through-holes H can be deflected by an electric field generated between the first electrode 71 and the second electrode 72.

[0042] By joining two chips (first chip 201 and second chip 202) each having a through-hole, it is possible to form an electronic device 2 having a deep through-hole that would be difficult to form in a single chip.

[0043] (Normal operation of electronic devices) During normal operation of the electronic device 2, a positive operating voltage (e.g., 5 V) or 0 V is applied to the first external connection portion 61. The voltage applied to the first external connection portion 61 is applied to the first electrode 71 via the first wiring layer 32A, the control circuit 11, the first bonding portion 40A, and the first conductive film 91.

[0044] 0 V is applied to the second external connection portion 62. The 0 V applied to the second external connection portion 62 is applied to the second electrode 72 via the second wiring layer 32B, the voltage write circuit 12, the second joint portion 40B, and the second conductive film 92.

[0045] When 0 V is applied to the first electrode 71 and the second electrode 72, the electron beam passing through the through-hole H is not deflected and is irradiated onto the drawing target. When 0 V is applied to the second electrode 72 and an operating voltage (e.g., 5 V) is applied to the first electrode 71, the electron beam passing through the through-hole H is deflected and is not irradiated onto the drawing target.

[0046] If there is a joint 40C among the multiple first joints 40A where the first metal part 41 and the second metal part 42 are poorly joined, it may be impossible to apply an operating voltage to the first electrode 71 to be connected to the poorly joined joint 40C, and it may be impossible to deflect the electron beam passing through the through hole H. This causes a defect in which the electron beam is irradiated onto a position where writing should not be performed. According to this embodiment, even if there is a poorly joined joint 40C, it is possible to deal with the problem as described below.

[0047] (Voltage write operation) Before the electronic device 2 is put into normal operation (the electron beam is used to draw on a drawing target), a voltage write operation, which will be described below, is performed. First, a positive write voltage (e.g., 5 V) that is the same as the operating voltage is applied to the second external connection portion 62. This write voltage is applied to the first electrode 71 via the voltage write circuit 12, the second wiring layer 32B, the second junction portion 40B, the second conductive film 92, the diode D, and the first conductive film 91. The write voltage is applied to the first electrodes 71 collectively via the diodes D. The potentials of the first electrodes 71 are collectively written to a desired potential (e.g., 5 V).

[0048] A monitor circuit provided outside the electronic device 2 is connected to the first external connection portion 61. With the write voltage applied to the first electrode 71, 0 V is applied to the first external connection portion 61 via the monitor circuit, and the current flowing through the control circuit 11 is detected by the monitor circuit. From the detection result, it is possible to determine whether the first bonding portion 40A is good or bad.

[0049] The current from the second external connection part 62 flows through the diode D, the first conductive film 91, and the first bonded part 40A to the control circuit 11. If a bonded joint 40C is faulty, the current from the second external connection part 62 is blocked by the faulty bonded joint 40C and does not flow through the control circuit 11. The presence or absence of a current flowing through the control circuit 11, or the magnitude of the current, can identify the faulty bonded joint 40C, in other words, the first electrode 71 whose voltage cannot be controlled by the control circuit 11.

[0050] After applying a write voltage to the first electrode 71 from the second external connection portion 62 via the voltage write circuit 12, the second joint 40B, and the diode D, 0 V is applied to the second external connection portion 62 while maintaining the state in which 0 V is applied to the first external connection portion 61. As a result, the potential of the first electrode 71 connected to the first joint 40A, which has a good bond, becomes 0 V through the first conductive film 91, the first joint 40A, the first wiring layer 32A, the control circuit 11, the first external connection portion 61, and the monitor circuit. The potential of the first electrode 71 connected to the joint 40C, which has a poor bond, becomes floating, and the write voltage is maintained.

[0051] In normal operation after the write operation, the voltage of the first electrode 71 connected to the first bonded joint 40A can be controlled to an operating voltage (e.g., 5 V) or 0 V depending on the voltage applied to the first external connection 61. In normal operation, the voltage of the first electrode 71 connected to the poorly bonded joint 40C is maintained at the voltage written in the write operation, regardless of the voltage applied to the first external connection 61. Because the write voltage is the same as the operating voltage during normal operation, in normal operation the voltage of the first electrode 71 connected to the poorly bonded joint 40C is maintained at the operating voltage (e.g., 5 V), regardless of the voltage applied to the first external connection 61. This allows the electron beam passing through the through hole H in which the first electrode 71 connected to the poorly bonded joint 40C is provided to be deflected, even if there is a poorly bonded joint 40C, thereby preventing a defect in which the electron beam is irradiated to a position where writing should not be performed.

[0052] During normal operation, it becomes impossible to control the first electrode 71 connected to the defective joint 40C to 0 V. Therefore, it becomes impossible to irradiate the drawing target with the electron beam passing through the through-hole H (defective pixel) where the first electrode 71 connected to the defective joint 40C is provided.

[0053] While it is required that there be no defects in which the electron beam is irradiated at a position where writing should not be performed, defects in which the electron beam is not irradiated at a position where writing should be performed may be tolerated if the number of defects is less than a predetermined number. Furthermore, the latter defects can be compensated for by using other normal pixels located around the defective pixel including the first electrode 71 connected to the poorly bonded joint 40C.

[0054] For example, in a method of forming one pixel by irradiating an electron beam multiple times, a defective pixel can be complemented by repeating the process of irradiating an electron beam, then slightly moving the mask, and then irradiating an electron beam again, thereby forming one pixel with multiple electron beams.

[0055] If the voltage of the first electrode 71 connected to the defective joint 40C drops due to current leakage or the like, the write operation is performed again to maintain the voltage of the first electrode 71 connected to the defective joint 40C at the operating voltage. For example, by monitoring the deflection amount of the electron beam, a drop in the voltage of the first electrode 71 connected to the defective joint 40C can be detected.

[0056] 4 is a schematic plan view showing an example of the configuration of the first surface 10A side of the first substrate 10 in the electronic device 2. In FIG. 4, the second direction X and the third direction Y are perpendicular to each other in a plane parallel to the first surface 10A. In addition, the second direction X and the third direction Y are perpendicular to the first direction Z.

[0057] A plurality of through holes H are arranged in the second direction X and the third direction Y. One third conductive film 81 is arranged in one-to-one correspondence with each through hole H. One first bonding portion 40A is arranged in contact with the third conductive film 81 in one-to-one correspondence with each through hole H. One through hole H is located between adjacent first bonding portions 40A in the third direction Y. One through hole H is located between adjacent second bonding portions 40B in the second direction X. For one through hole H, two second bonding portions 40B are arranged to sandwich the through hole H in the second direction X. The number of second bonding portions 40B is greater than the number of first bonding portions 40A. The potentials of the plurality of second electrodes 72 can be collectively controlled via the plurality of second bonding portions 40B and the common fourth conductive film 82. The potentials of the plurality of first electrodes 71 are individually controlled via the corresponding first bonding portion 40A and third conductive film 81.

[0058] The plurality of second junctions 40B are provided on a common fourth conductive film 82 and are in contact with the fourth conductive film 82. As shown in FIG. 3, the plurality of second junctions 40B are commonly connected to the first semiconductor layer 21, which is the anode of a diode D. Therefore, even if a second junction 40B with poor junction occurs among the plurality of second junctions 40B, a write voltage can be applied collectively to the plurality of first electrodes 71 through the diode D during the write operation via the other second junctions 40B with good junctions.

[0059] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0060] 1, 2...electronic device, 10...first substrate, 10A...first surface, 11...control circuit, 12...voltage write circuit, 20...second substrate, 20A...second surface, 21...first semiconductor layer, 22...second semiconductor layer, 23...third semiconductor layer, 30...wiring portion, 31...insulating layer, 32A...first wiring layer, 32B...second wiring layer, 40...bonding portion, 40A...first bonding portion, 40B...second bonding portion, 40C...bonding failure portion, 41...first metal portion, 42...second No. 2 metal portion, 43...third metal portion, 44...fourth metal portion, 50...insulating film, 61...first external connection portion, 62...second external connection portion, 70...electrode, 71...first electrode, 72...second electrode, 81...third conductive film, 82...fourth conductive film, 83...fifth conductive film, 84...sixth conductive film, 91...first conductive film, 92...second conductive film, 101...first chip, 102...second chip, 201...first chip, 202...second chip, D...diode, H...through hole

Claims

1. a first chip having a first substrate with a first surface and control circuitry; a second chip including a second substrate having a second surface facing the first surface in a first direction and an electrode; a plurality of bonding portions provided between the first surface and the second surface, electrically connecting the control circuit and the electrodes and bonding the first chip and the second chip; Equipped with The second substrate has a diode electrically connected to the electrode and the junction, the direction from the diode to the electrode being a forward direction, and the direction from the control circuit to the diode via the junction being a reverse direction.

2. 2. The electronic device according to claim 1, wherein the diode comprises a first semiconductor layer of a first conductivity type provided on the second substrate, and a second semiconductor layer of a second conductivity type provided within the first semiconductor layer.

3. The electronic device according to claim 2 , wherein the second chip is provided on the second surface and has a conductive film electrically connected to the second semiconductor layer, the electrode, and the junction.

4. a through hole penetrating the second substrate and the first substrate in the first direction; the electrode includes a first electrode and a second electrode provided on an inner surface of a portion of the through hole that penetrates the second substrate, The joint is a first junction electrically connected to the control circuit, the first electrode, and the cathode of the diode; a second junction electrically connected to the second electrode and the anode of the diode; 4. The electronic device according to claim 1, wherein

5. the first chip has a wiring portion provided between the first surface and the second surface, The electronic device according to claim 1 , wherein the wiring portion has a wiring layer electrically connected to the control circuit and the junction portion.

6. 10. A method of operating an electronic device according to claim 1, comprising: applying a voltage to the electrode through the diode from a voltage write circuit; applying a voltage to the electrode and then applying 0 V to the junction; A method of operating an electronic device, comprising:

7. 7. The method for operating an electronic device according to claim 6, further comprising determining whether the joint is good or bad from a current flowing through the control circuit while a voltage is applied to the electrode.

8. the electronic device further includes a through-hole penetrating the second substrate and the first substrate in the first direction; the electrode includes a first electrode and a second electrode provided on an inner surface of a portion of the through hole that penetrates the second substrate, The joint is a first junction electrically connected to the control circuit, the first electrode, and the cathode of the diode; a second junction electrically connected to the second electrode and the anode of the diode; and The method for operating an electronic device according to claim 6 or 7, further comprising applying a voltage to the electrode via the second junction and the diode.

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