Electronic component and manufacturing method thereof

Abstract

To form a plating film with good continuity on a baked film that serves as the base in an external conductor disposed on the outer surface of a component element.SOLUTION: An outer conductor 11 includes, from the component body side, at least a baked film 13 and a plating film 14 in contact with the baked film 13, and the baked film 13 includes silver 22 and glass 23. A glass floating portion 21 derived from the glass 23 is exposed on the surface of the baked film 13 in contact with the plating film 14, and the maximum diameter of the glass floating portion 21 is 4.8 μm or less. This 4.8 μm can be considered the critical value for the maximum diameter of the glass floating portion 21 at which the continuity of the plating film 14 on the underlying baked film 13 can be maintained.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to an electronic component and a manufacturing method thereof, and more particularly to the structure of an outer conductor disposed on the outer surface of a component body and a manufacturing method of the outer conductor. [Background technology]

[0002] For example, Japanese Patent Application Laid-Open No. 2017-195309 (Patent Document 1) describes a laminated coil component in which an external conductor serving as a terminal electrode provided on the outer surface of a component element is formed using a baked film containing, for example, silver and glass as a base, and then nickel-plated and tin-plated thereon. In this laminated coil component, the outer surface of the component element is covered with a glass layer.

[0003] Patent Document 1 describes that the softening point of the glass that is the material of the baked film is preferably lower than the softening point of the glass that forms the glass layer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2017-195309 Summary of the Invention [Problem to be solved by the invention]

[0005] As described above, the technology described in Patent Document 1 requires that the softening point of the glass used as the material for the baked film be low to a certain extent. However, if the softening point of the glass is low, the following problems may occur.

[0006] During the firing process to form the baked film, glass floats to the surface. However, if the softening point of the glass is low, the glass melts excessively, liquefies, and spreads. As a result, the proportion of glass on the surface of the baked film, which serves as the base for plating, increases, resulting in the formation of large glass floats that hinder electroplating. This can cause the nickel plating film formed on the baked film to be broken, reducing the reliability of the external conductor.

[0007] Therefore, the object of the present disclosure is to provide an electronic component and a manufacturing method thereof in which a plating film is formed with good continuity on the underlying baked film in an external conductor arranged on the outer surface of a component body. [Means for solving the problem]

[0008] The present disclosure is first directed to an electronic component comprising a component body, an internal conductor disposed within the component body and partially exposed on the external surface of the body, and an external conductor disposed on the external surface of the component body and electrically connected to the internal conductor.

[0009] The external conductor includes, from the component body side, at least a baked film and a plated film in contact with the baked film, and the baked film includes silver and glass.

[0010] In order to solve the above-mentioned technical problems, the electronic component according to the present disclosure is characterized in that a glass floating portion derived from the glass is exposed on the surface of the baked film that contacts the plating film, and the maximum diameter of the glass floating portion is 4.8 μm or less.

[0011] The present disclosure is also directed to a method of manufacturing the electronic component described above.

[0012] The method for manufacturing an electronic component according to the present disclosure includes the steps of: preparing a component body having an internal conductor disposed therein with a portion of the internal conductor exposed on its outer surface; preparing a conductive paste containing silver powder and glass powder; applying the conductive paste to the outer surface of the component body so as to be electrically connected to the internal conductor; firing the conductive paste applied to the outer surface of the component body to form a fired film; and electroplating the fired film to form a plated film.

[0013] The method for manufacturing an electronic component according to the present disclosure is characterized in that, in the step of preparing a conductive paste, the glass powder contained in the conductive paste contains a high-softening-point glass having a softening point of 720 to 870°C; and, in the step of forming a baked film, a top temperature of 730 to 860°C is applied to sinter the conductive paste, and a reducing atmosphere or nitrogen atmosphere is applied at least in the sintering promotion temperature range of the silver powder of 500°C or higher during the temperature rise to the top temperature, and glass floating portions derived from the glass powder are exposed on the surface of the baked film that contacts the plating film, and the maximum diameter of the glass floating portions is 4.8 μm or less. [Effects of the Invention]

[0014] According to the present disclosure, a critical value for the maximum diameter of the glass floating portion exposed on the surface of the baked film is given, which allows the continuity of the plating film on the underlying baked film to be maintained. That is, it has been found that if the maximum diameter of the glass floating portion is kept to 4.8 μm or less, the continuity of the plating film on the underlying baked film is maintained, and the desired reliability of the outer conductor can be obtained. [Brief explanation of the drawings]

[0015] [Figure 1] 1 is a perspective view showing the appearance of an electronic component 1 according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a cross-sectional view schematically showing the electronic component 1 shown in FIG. [Figure 3] 3 is an enlarged cross-sectional view showing a portion surrounded by a circle III in FIG. 2. FIG. [Figure 4]1A and 1B are diagrams showing the surface of a baked film 13 produced in an experimental example, where (A) shows the surface of a baked film 13 according to one embodiment of the present disclosure, and (B) shows the surface of a baked film 13 according to a comparative example. [Figure 5] 1A and 1B are diagrams showing cross sections of outer conductors 11 including baked films 13 produced under various conditions in experimental examples. DETAILED DESCRIPTION OF THE INVENTION

[0016] An electronic component 1 according to an embodiment of the present disclosure will be described with reference to Figures 1 to 3. The illustrated electronic component 1 is intended to be a multilayer coil component.

[0017] The electronic component 1 includes a chip-shaped component body 2 made of ceramic such as Ni-Zn-Cu ferrite. The component body 2 has a rectangular parallelepiped shape whose outer shape is defined by four side faces 3, 4, 5, and 6 and two end faces 7 and 8.

[0018] Although not shown in detail, the component body 2 has a laminated structure provided by a plurality of ceramic layers. The lamination direction of this laminated structure is arbitrary, and may be the left-right direction or the up-down direction in FIG. 2.

[0019] An internal conductor 9 is disposed inside the component body 2. The internal conductor 9 includes a coil conductor containing, for example, Ag, Cu, or Pd as a conductive component. Therefore, although not shown in detail, the internal conductor 9 is a coil conductor. More specifically, as is well known, the internal conductor 9 is a solenoidal coil conductor as a whole, including line conductors extending between the ceramic layers and interlayer connection conductors connected to the ends of the line conductors and penetrating the ceramic layers in the thickness direction. A portion of the internal conductor 9 is exposed on the outer surface of the component body 2. Note that in FIG. 2, the internal conductor 9 is simply illustrated using the symbol for "coil."

[0020] External conductors 11 and 12 electrically connected to the internal conductors 9 are disposed on the outer surfaces of the component body 2, more particularly on the end faces 7 and 8, respectively. The external conductor 11 is provided so as to extend from the end face 7 to a portion of each of the side faces 3 to 6 adjacent thereto, and the external conductor 12 is provided so as to extend from the end face 8 to a portion of each of the side faces 3 to 6 adjacent thereto.

[0021] The outer conductors 11 and 12 have substantially the same cross-sectional structure. Therefore, the outer conductor 11, whose cross-sectional structure is shown enlarged in Fig. 3, will be described in detail, and a description of the other outer conductor 12 will be omitted.

[0022] 3, external conductor 11 includes, from the component body 2 side, at least baked film 13 and plating film 14 in contact with baked film 13. Baked film 13 includes silver and glass. Plating film 14 includes, for example, nickel plating layer 15 and tin plating layer 16 thereon.

[0023] Briefly, the following steps are performed to manufacture the electronic component 1. First, a component element 2 is prepared, and a conductive paste containing silver powder and glass powder is prepared. Next, the conductive paste is applied to the outer surface of the component element 2 so as to be electrically connected to the internal conductors 9. Next, the conductive paste is fired to form a baked film 13. After that, electroplating is performed to form a plating film 14 on the baked film 13. In this plating process, a step of forming a nickel plating layer 15 and then a step of forming a tin plating layer 16 are performed.

[0024] The baked film 13 functions as a seed layer that serves as a starting point for plating growth during electroplating of the plating film 14, particularly electroplating of the nickel plating layer 15. Therefore, it is preferable that the surface of the baked film 13 that contacts the plating film 14 has good electrical conductivity. On the other hand, since the baked film 13 is obtained by firing a conductive paste containing silver powder and glass powder, it contains silver and glass, and it is unavoidable that glass floating portions resulting from the glass will be exposed on the surface of the baked film 13, i.e., the surface that contacts the plating film 14.

[0025] According to the present disclosure, a critical value for the maximum diameter of the glass floating portion exposed on the surface of the baked film 13 is given, at which the continuity of the plating film 14 on the baked film 13 can be maintained. Below, an example of an experiment conducted to determine the critical value for the maximum diameter of the glass floating portion at which the continuity of the plating film 14 can be maintained is described.

[0026] [Table 1]

[0027] In this experimental example, baked films were formed using conditions 1 to 5 shown in Table 1. In Table 1, "glass particle size distribution" indicates the particle size distribution of the glass powder contained in the conductive paste used to form the baked film, "glass softening point" indicates the softening point of the glass that is the material for the glass powder, and "firing temperature" indicates the firing temperature (top temperature) applied to the conductive paste to form the baked film. After a baked film was formed on the component body under these conditions, nickel electroplating and tin electroplating were applied sequentially to form a plated film. In this way, electronic components with external conductors formed thereon were obtained as samples.

[0028] The "maximum diameter" shown in Table 1 is the maximum value of the equivalent circle diameter of the floating glass part that can be seen two-dimensionally when the edge of the sample electronic component is polished to expose the baked film and this exposed surface is viewed in a plane perpendicular to the surface. In the "Ni plating evaluation" in Table 1, the symbols "◎", "○", and "×" are shown in order of highest evaluation.

[0029] Figure 4 shows the surface of a baked film 13 produced in an experimental example. Figure 4 was created based on a binarized micrograph of the surface of the baked film 13. In Figure 4, the black spot-like areas are glass floating areas 21, and the light-colored areas in the background are silver 22. In Figure 4, (A) shows the surface of a baked film 13 according to an embodiment of the present disclosure, more specifically, the surface of a baked film 13 produced under condition 1 shown in Table 1, and (B) shows the surface of a baked film 13 according to a comparative example, more specifically, the surface of a baked film 13 produced under condition 5 shown in Table 1.

[0030] 4(A), the glass floating portion 21 according to the example tends to protrude substantially hemispherically from the surface of the baked film 13. This state increases the area of ​​the interface with the nickel plating layer 15, thereby improving the adhesive strength of the plating film 14 to the baked film 13.

[0031] 4, it can be seen that the glass floating portion 21 exposed to the baked film 13 under condition 1 shown in (A) is smaller than the glass floating portion 21 exposed to the baked film 13 under condition 5 shown in (B). As shown in Table 1, the glass floating portion 21 shown in (A) has a maximum diameter of 3.0 μm, and the glass floating portion 21 shown in (B) has a maximum diameter of 9.0 μm. The maximum diameters of the glass floating portions exposed to the baked film under each of conditions 1 to 5, including the baked films 13 under conditions 1 and 5, are as shown in Table 1.

[0032] Figure 5 shows cross sections of the outer conductor 11 including the baked film 13 produced under various conditions in the experimental example. As with Figure 4, Figure 5 was created based on a binarized micrograph of the cross section of the outer conductor 11. In the baked film 13 shown in Figure 5, the black spot-like areas are glass 23, and the light-colored area in the background is silver 22. Part of the glass 23 forms a floating glass area 21.

[0033] In FIG. 5, (1) to (5) indicate the outer conductor 11 including the baked film 13 produced under conditions 1 to 5 in Table 1, respectively.

[0034] In Figure 5, the diameter dimensions are shown for those glass floating portions 21 that have the largest diameter. These largest diameters are also shown in the "Maximum diameter" column in Table 1. The "Ni plating evaluation" in Table 1 is an evaluation based on the shape of the nickel plating layer 15 that contacts the glass floating portion 21 in the cross section shown in Figure 5.

[0035] The maximum diameter of the glass floating portion 21 shown in Figure 5(1) is 3 μm (condition 1 in Table 1). Under these conditions, the nickel plating layer 15 completely covers the glass floating portion 21, despite the presence of the glass floating portion 21, and its thickness is almost uniform. As a result, the "plating evaluation" in Table 1 was rated "Excellent".

[0036] The maximum diameter of the glass floating portion 21 shown in Figure 5 (2) is 3.5 μm (condition 2 in Table 1). Under these circumstances, as with condition 1, the nickel plating layer 15 completely covers the glass floating portion 21 despite its presence, and its thickness is almost uniform. As a result, the "plating evaluation" in Table 1 was rated "Excellent." This shows that if the maximum diameter of the glass floating portion 21 is 3.5 μm or less, the glass floating portion 21 can be completely covered by plating growth.

[0037] The maximum diameter of the glass floating portion 21 shown in Figure 5 (3) is 4.8 μm (condition 3 in Table 1). Under these conditions, the nickel plating layer 15 is not interrupted on the glass floating portion 21, but its thickness is thin. As a result, the "plating evaluation" in Table 1 was rated "Good."

[0038] The maximum diameter of the glass floating portion 21 shown in Figure 5 (4) is 5 μm (condition 4 in Table 1). Under these circumstances, the nickel plating layer 15 is interrupted on the glass floating portion 21. As a result, the "plating evaluation" in Table 1 was rated "X".

[0039] The maximum diameter of the glass floating portion 21 shown in Figure 5 (5) is 9 μm (condition 5 in Table 1). Under these circumstances, the nickel plating layer 15 is interrupted on the glass floating portion 21, as in the case of condition 4. As a result, the "plating evaluation" in Table 1 was rated "X".

[0040] From the above results, we can find a critical value for the maximum diameter of 4.8 μm in FIG. 5(3), which is less than the maximum diameter of 5 μm in FIG. 5(4). In other words, the critical value for the maximum diameter can be set to 4.8 μm. Therefore, in this disclosure, the maximum diameter of the glass-floating portion 21 is set to 4.8 μm or less. Furthermore, a comparison of FIG. 5(2) and FIG. 5(3) indicates that the maximum diameter of the glass-floating portion 21 is more preferably 3.5 μm or less.

[0041] Thus, if the maximum diameter of the glass floating portion 21 is 4.8 μm or less, the nickel plating layer 15 can be formed under normal plating conditions without losing continuity. In this case, the average thickness of the nickel plating layer 15 is preferably controlled to be 1 μm or more and 4 μm or less. Therefore, there is no need to perform nickel plating under conditions that result in a greater than normal amount of plating deposition, and the nickel plating layer 15 can be prevented from spreading beyond the baked film 13 to undesired areas, for example.

[0042] When the electronic component 1 is a coil component, the component element 2 is made of a ceramic material such as a ferrite material. When the ferrite material contains Cu or Bi, Cu or Bi tends to precipitate on the surface of the component element 3 upon firing. In this case, the surface resistance of the component element 2 is lower than that of a ferrite material containing neither Cu nor Bi. Therefore, it can be inferred that the nickel plating layer 15 is more likely to extend beyond the baked film 13 and into undesired areas than in the case of a ferrite material containing neither Cu nor Bi. In this respect, the present disclosure is even more significant when applied to an element made of a ferrite material containing Cu or Bi.

[0043] Although the preferable manufacturing conditions for realizing the above-mentioned appropriate maximum diameter of glass floating portion 21 can be seen from the above experimental examples, a preferable manufacturing method for electronic component 1 will be generally described below.

[0044] As briefly explained above, the method for manufacturing electronic component 1 begins with preparing component element 2 and a conductive paste containing silver powder and glass powder. The glass powder contained in the conductive paste preferably contains high-softening-point glass, with a softening point of 720°C or higher and 870°C or lower, and more preferably 750°C or higher and 850°C or lower. By including such high-softening-point glass, the baking film 13 can be sintered at a sufficiently high temperature while preventing glass from floating on the surface of the baking film 13.

[0045] However, it is preferable that the glass further contains, in addition to the high softening point glass, a low softening point glass having a softening point of 400°C or more and 620°C or less. The inclusion of such a low softening point glass increases the bonding strength between the component element 2 and the baked film 13. When the glass contains both a high softening point glass and a low softening point glass, the amount of the low softening point glass is made less than the high softening point glass, and the mixing ratio of the high softening point glass and the low softening point glass is preferably in the range of (70 to 90):(10 to 30) by mass ratio.

[0046] The glass powder may be particulate or flat. When the glass powder is spherical, it is preferable that the particle diameter D50 is 0.5 μm or more and 1.2 μm or less. When the glass powder is flat, it is preferable that the specific surface area is 1.1 mm 2 / g or more and 6.0mm 2 / g or less. Within this range, the maximum diameter of glass floating portion 21 can be easily set to 4.8 μm or less. More preferably, the glass powder has a D99 of 4.0 μm or less. Within this range, the maximum diameter of glass floating portion 21 can be even more easily set to 4.8 μm or less.

[0047] Next, a conductive paste is applied to the outer surface of the component element 2 so as to be electrically connected to the internal conductors 9, and then the conductive paste is fired to form a fired film 13.

[0048] In the firing process described above, a top temperature of 770 to 860°C is applied to sinter the conductive paste. A reducing atmosphere or nitrogen atmosphere is applied, at least in the temperature range of 500°C or higher during the temperature rise to the top temperature, which is a temperature range that promotes sintering of the silver powder. Normally, an air atmosphere is used for sintering a conductive paste containing silver powder because there is no concern about oxidation of silver even in air. However, the reason for deliberately using a reducing atmosphere or nitrogen atmosphere in this way is based on the finding that this can suppress the wetting and spreading of glass. It is preferable to use an air atmosphere during the temperature rise up to 500°C to efficiently burn the binder contained in the conductive paste.

[0049] On the surface of the baked film 13 obtained by firing the conductive paste in this manner, i.e., the surface in contact with the plating film 14, glass floating portions 21 derived from the glass powder are exposed, and the maximum diameter of the glass floating portions 21 is 4.8 μm or less.

[0050] The above description has been given taking a coil component as an example of an electronic component that is the subject of the present disclosure. However, the present disclosure is not limited to coil components, and can also be applied to other ceramic electronic components such as multilayer ceramic capacitors and thermistors, and further to electronic components other than ceramic electronic components.

[0051] Furthermore, in the illustrated embodiment, the component element has a rectangular parallelepiped shape, but the present disclosure can also be applied to electronic components whose component element has a shape other than a rectangular parallelepiped, for example, a cylindrical or disc shape.

[0052] Furthermore, the several embodiments shown or not shown above are merely examples, and partial substitution or combination of configurations is possible between different embodiments.

[0053] Embodiments of the present disclosure include the following:

[0054] <1> A component body; an internal conductor disposed inside the component element, a portion of which is exposed on the outer surface of the component element; an outer conductor disposed on an outer surface of the component body and electrically connected to the inner conductor; Equipped with the external conductor includes, from the component body side, at least a baked film and a plating film in contact with the baked film, the baked film comprises silver and glass; A glass floating portion derived from the glass is exposed on the surface of the baked film that contacts the plating film, and the maximum diameter of the glass floating portion is 4.8 μm or less. Electronic components.

[0055] <2> The glass floating portion is exposed with a maximum diameter of 3.5 μm or less. <1> The electronic component according to claim 1.

[0056] <3> The glass includes a high softening point glass having a softening point of 720°C or higher and 870°C or lower. <1> or <2> The electronic component according to claim 1.

[0057] <4> The glass further contains, in addition to the high softening point glass, a low softening point glass having a softening point of 400°C or more and 620°C or less, in an amount less than that of the high softening point glass. <3> The electronic component according to claim 1.

[0058] <5> The mixing ratio of the high softening point glass and the low softening point glass is in the range of (70 to 90):(10 to 30) by mass ratio. <4> The electronic component according to claim 1.

[0059] <6> The glass floating portion is raised in a substantially hemispherical shape. <1> Or <5> 1. An electronic component according to any one of the preceding claims.

[0060] <7> The plating film has an average thickness of 1 μm or more and 4 μm or less. <1> Or <6> 1. An electronic component according to any one of the preceding claims.

[0061] <8> the electronic component is a coil component, the component body is made of a ceramic material, and the internal conductor includes a coil conductor; <1> Or <7> 1. An electronic component according to any one of the preceding claims.

[0062] <9> the component body is made of a ferrite material, and the ferrite material contains Cu or Bi; <8> The electronic component according to claim 1.

[0063] <10> preparing a component body having an internal conductor disposed therein and a portion of the internal conductor exposed on an outer surface; providing a conductive paste containing silver powder and glass powder; applying the conductive paste to an outer surface of the component body so as to be electrically connected to the internal conductor; a step of firing the conductive paste applied to the outer surface of the component body to form a fired film; a step of electroplating the baked film to form a plating film; Equipped with In the step of preparing the conductive paste, the glass powder contained in the conductive paste contains a high-softening-point glass having a softening point of 720 to 870°C; In the step of forming the baked film, a top temperature of 730 to 860°C is applied to sinter the conductive paste, and a reducing atmosphere or a nitrogen atmosphere is applied at least in a sintering promotion temperature range of the silver powder of 500°C or higher during the temperature rise to the top temperature, and glass floating portions derived from the glass powder are exposed on the surface of the baked film in contact with the plating film, and the maximum diameter of the glass floating portions is 4.8 μm or less. Manufacturing methods for electronic components.

[0064] <11> In the step of preparing the conductive paste, the glass powder contained in the conductive paste further contains, in addition to the high softening point glass, a low softening point glass having a softening point of 400°C or more and 620°C or less, in an amount less than that of the high softening point glass. <10> A method for manufacturing the electronic component according to claim 1.

[0065] <12> The mixing ratio of the high softening point glass and the low softening point glass is in the range of (70 to 90):(10 to 30) by mass ratio. <11> A method for manufacturing the electronic component according to claim 1.

[0066] <13> In the step of preparing the conductive paste, the glass powder contained in the conductive paste has at least one of a spherical shape and a flat shape; The spherical glass powder has a particle diameter of 0.5 to 1.2 μm at D50, The flat glass powder has a specific surface area of ​​1.1 to 6.0 mm 2 / g, <10> Or <12> 10. A method for manufacturing an electronic component according to any one of the preceding claims.

[0067] <14> The spherical glass powder has a particle diameter of 4.0 μm or less in D99. <13> A method for manufacturing the electronic component according to claim 1. [Explanation of symbols]

[0068] 1. Electronic Components 2 parts base 3~6 sides 7,8 End face 9 Inner conductor 11,12 Outer conductor 13 Baked film 14 Plating film 15 Nickel plating layer 16 Tin plating layer 21 Glass floating part 22 Silver 23 Glass

Claims

1. A component body; an internal conductor disposed inside the component element, a portion of which is exposed on the outer surface of the component element; an outer conductor disposed on an outer surface of the component body and electrically connected to the inner conductor; Equipped with the external conductor includes, from the component body side, at least a baked film and a plating film in contact with the baked film, the baked film comprises silver and glass; a glass floating portion derived from the glass is exposed on a surface of the baked film in contact with the plating film, and the maximum diameter of the glass floating portion is 4.8 μm or less; Electronic components.

2. 2. The electronic component according to claim 1, wherein the exposed glass floating portion has a maximum diameter of 3.5 [mu]m or less.

3. 2. The electronic component according to claim 1, wherein the glass comprises a high-softening-point glass having a softening point of 720°C or higher and 870°C or lower.

4. 4. The electronic component according to claim 3, wherein the glass further contains, in addition to the high softening point glass, a low softening point glass having a softening point of 400° C. or more and 620° C. or less in an amount less than that of the high softening point glass.

5. 5. The electronic component according to claim 4, wherein the mixing ratio of the high softening point glass and the low softening point glass is in the range of (70 to 90):(10 to 30) by mass ratio.

6. 2. The electronic component according to claim 1, wherein the glass floating portion is raised in a substantially hemispherical shape.

7. The electronic component according to claim 1 , wherein the plating film has an average thickness of 1 μm or more and 4 μm or less.

8. 2. The electronic component according to claim 1, wherein the electronic component is a coil component, the component body is made of a ceramic material, and the internal conductor includes a coil conductor.

9. 9. The electronic component according to claim 8, wherein the component body is made of a ferrite material, and the ferrite material contains Cu or Bi.

10. preparing a component body having an internal conductor disposed therein and a portion of the internal conductor exposed on an outer surface; providing a conductive paste containing silver powder and glass powder; applying the conductive paste to an outer surface of the component body so as to be electrically connected to the internal conductor; a step of firing the conductive paste applied to the outer surface of the component body to form a fired film; a step of electroplating the baked film to form a plating film; Equipped with In the step of preparing the conductive paste, the glass powder contained in the conductive paste contains a high-softening-point glass having a softening point of 720 to 870°C; In the step of forming the baked film, a top temperature of 730 to 860°C is applied to sinter the conductive paste, and a reducing atmosphere or a nitrogen atmosphere is applied at least in a sintering promotion temperature range of the silver powder of 500°C or higher during the temperature rise to the top temperature, and glass floating portions derived from the glass powder are exposed on the surface of the baked film in contact with the plating film, and the maximum diameter of the glass floating portions is 4.8 μm or less. Manufacturing methods for electronic components.

11. 11. The method for manufacturing an electronic component according to claim 10, wherein in the step of preparing the conductive paste, the glass powder contained in the conductive paste further contains, in addition to the high softening point glass, a low softening point glass having a softening point of 400° C. or more and 620° C. or less, in an amount smaller than that of the high softening point glass.

12. 12. The method for manufacturing an electronic component according to claim 11, wherein the mixing ratio of the high softening point glass and the low softening point glass is in the range of (70 to 90):(10 to 30) by mass ratio.

13. In the step of preparing the conductive paste, the glass powder contained in the conductive paste has at least one of a spherical shape and a flat shape; The spherical glass powder has a particle size of 0.5 to 1.2 μm at D50, The flat glass powder has a specific surface area of ​​1.1 to 6.0 mm ２ / g, The method for manufacturing an electronic component according to claim 10.

14. The method for manufacturing an electronic component according to claim 13, wherein the spherical glass powder has a particle diameter of 4.0 μm or less in D99.

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