Method for manufacturing semiconductor device, method for inspecting semiconductor device, and inspection apparatus

Abstract

To provide a method for manufacturing a semiconductor device, a method for inspecting the semiconductor device, and an inspection apparatus for inspecting an electrical characteristic of a semiconductor element using a plurality of probes whose variation in amount of scraping due to cleaning is suppressed.SOLUTION: An inspection apparatus INA includes a probe card PRC having a plurality of probes PR, a first holding unit VM1 that detachably holds a semiconductor substrate SSB, a cleaning substrate CSB that cleans the plurality of probes, and a second holding unit VM2 that detachably holds the cleaning substrate. The first holding unit and the second holding unit are relatively movable with respect to the probe card. A method for manufacturing a semiconductor device includes steps of: cleaning the plurality of probes using the cleaning substrate held by the second holding unit in the inspection apparatus; inspecting an electrical characteristic of a semiconductor element by bringing the plurality of probes into contact with a plurality of bumps of a semiconductor substrate held by the first holding unit; and processing the semiconductor substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, a method for inspecting a semiconductor device, and an inspection device. [Background technology]

[0002] A semiconductor device is known that includes a semiconductor element, a plurality of pads, and a plurality of bumps arranged on the plurality of pads. In a method for manufacturing such a semiconductor device, after forming a plurality of semiconductor devices on a semiconductor substrate, the electrical characteristics of each semiconductor device are tested using a probe card (so-called on-wafer testing). During testing, each of a plurality of probes included in the probe card comes into contact with a bump, and a bump is attached to each probe. The bumps attached to each probe may cause poor electrical connection when testing other semiconductor devices on the same semiconductor substrate. Therefore, in on-wafer testing of semiconductor devices with bumps, a process of cleaning the plurality of probes is generally performed within the process of testing a plurality of semiconductor devices formed on a single semiconductor substrate.

[0003] One method for cleaning probes uses an inspection device that includes an inspection stage on which a semiconductor substrate is placed, a cleaning stage, and a cleaning sheet attached to the cleaning stage. The inspection device described in JP 2007-294489 A (Patent Document 1) is configured to bring the tip of one probe into contact with the cleaning sheet and scrape the tip. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-294489 Summary of the Invention [Problem to be solved by the invention]

[0005] A typical cleaning sheet is relatively soft, and when a probe is pressed against the sheet, it sinks into the upper surface of the sheet. The frictional force generated by the friction between the multiple probes and the cleaning sheet varies depending on the position of each probe on the probe card. As a result, there is a problem in that the amount of wear at the tip of each probe varies among the multiple probes included in the probe card.

[0006] Specifically, the amount by which the outermost probe among the multiple probes sinks into the top surface of the cleaning sheet is greater than the amount by which the central probe among the multiple probes sinks into the top surface of the cleaning sheet. The central probe among the multiple probes is pressed against the cleaning sheet together with the other probes arranged around it. Therefore, the amount of sinking of the central probe and the surrounding probes is relatively uniform, and the frictional force generated therebetween is also relatively uniform. In contrast, the amount by which the outermost probe among the multiple probes sinks into the top surface of the cleaning sheet is greater than the amount by which the central probe and the surrounding probes sink. As a result, the frictional force generated between the outermost probe among the multiple probes and the cleaning sheet is greater than the frictional force generated between the central probe among the multiple probes and the cleaning sheet, and the amount of wear at the tip of the outermost probe among the multiple probes is greater than that of the central probe among the multiple probes.

[0007] Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0008] A method for manufacturing a semiconductor device according to the present disclosure includes a step of preparing a semiconductor substrate and an inspection device. In the preparing step, the inspection device includes a probe card having a plurality of probes, a first holding unit that detachably holds the semiconductor substrate, a cleaning substrate that cleans the plurality of probes, and a second holding unit that detachably holds the cleaning substrate. The first holding unit and the second holding unit are movable relative to the probe card. The method for manufacturing a semiconductor device further includes a step of cleaning the plurality of probes using the cleaning substrate held in the second holding unit in the inspection device, a step of contacting the plurality of probes with a plurality of bumps on the semiconductor substrate held in the first holding unit after the cleaning step to inspect the electrical characteristics of the semiconductor element, and a step of processing the semiconductor substrate after the inspection step.

[0009] A semiconductor device inspection method according to the present disclosure includes the steps of preparing a semiconductor substrate and an inspection device. The inspection device includes a probe card having a plurality of probes, a first holding unit that detachably holds the semiconductor substrate, a cleaning substrate that cleans the plurality of probes, and a second holding unit that detachably holds the cleaning substrate. The first holding unit and the second holding unit are movable relative to the probe card. The semiconductor device inspection method further includes the steps of cleaning the plurality of probes using the cleaning substrate held in the second holding unit in the inspection device, and, after the cleaning step, bringing the plurality of probes into contact with a plurality of bumps on the semiconductor substrate held in the first holding unit to inspect the electrical characteristics of the semiconductor element.

[0010] The inspection device according to the present disclosure includes a probe card having a plurality of probes, a first holding unit that detachably holds a semiconductor substrate, a cleaning substrate that cleans the plurality of probes, and a second holding unit that detachably holds the cleaning substrate. The first holding unit and the second holding unit are movable relative to the probe card. The inspection device is switchable between a first state in which the plurality of probes are in contact with a plurality of bumps on the semiconductor substrate held by the first holding unit, and a second state in which the plurality of probes are in contact with the cleaning substrate held by the second holding unit. [Effects of the Invention]

[0011] According to the present disclosure, it is possible to suppress variations in the amount of wear at the tip portions among a plurality of probes included in a probe card. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a diagram for explaining an inspection device according to an embodiment of the present disclosure, which is used in a step of inspecting electrical characteristics of a semiconductor element in a manufacturing method of a semiconductor device according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a plan view of a second holding unit of the inspection device according to the embodiment of the present disclosure. [Figure 3] FIG. 4 is a partially enlarged cross-sectional view illustrating a second holding section of the inspection device according to the embodiment of the present disclosure. [Figure 4] 10A to 10C are diagrams illustrating a step of cleaning a plurality of probes of an inspection device in a method for manufacturing a semiconductor device according to an embodiment of the present disclosure. [Figure 5] FIG. 10 is a diagram for explaining a state in which the first holding portion and the second holding portion are moving relative to the probe card, which is realized after the process of cleaning multiple probes of an inspection device and before the process of inspecting the electrical characteristics of a semiconductor element in a manufacturing method of a semiconductor device according to an embodiment of the present disclosure. [Figure 6] 1A to 1C are diagrams for explaining a step of inspecting electrical characteristics of a semiconductor element in a manufacturing method of a semiconductor device according to an embodiment of the present disclosure. [Figure 7] FIG. 10 is a plan view of a first modified example of the second holding unit of the inspection device according to the embodiment of the present disclosure. [Figure 8] FIG. 10 is a plan view of a second modified example of the second holding unit of the inspection device according to the embodiment of the present disclosure. [Figure 9] FIG. 10 is a schematic diagram illustrating that the frictional force generated between multiple probes and a cleaning sheet attached to the top surface of a cleaning stage varies depending on the position of each probe on a probe card in an inspection device of a comparative example. DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, embodiments will be described with reference to the drawings. In the following drawings, the same or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated.

[0014] 1, the inspection device INA according to the embodiment of the present disclosure is a device for inspecting the electrical characteristics of a semiconductor element (not shown) included in a semiconductor substrate SSB. The inspection device INA is used in a process for inspecting the electrical characteristics of the semiconductor element included in the semiconductor substrate SSB in a method for manufacturing a semiconductor device.

[0015] The semiconductor substrate SSB has, for example, a plurality of semiconductor elements, a plurality of pads PAD, and a plurality of bumps BMP. Each of the plurality of pads PAD is electrically connected to each of the plurality of semiconductor elements. The semiconductor substrate SSB has a first main surface MSF1 on which the plurality of pads PAD are arranged side by side, and a second main surface MSF2 located on the opposite side of the first main surface MSF1. Each of the plurality of bumps BMP is arranged on each of the plurality of pads PAD. Each of the plurality of bumps BMP is, for example, a solder bump. Note that the material constituting the bumps BMP is not limited to solder and may be any conductive material. The material constituting the bumps BMP includes, for example, at least one selected from the group consisting of tin (Sn), nickel (Ni), silver (Ag), copper (Cu), and gold (Au).

[0016] The semiconductor substrate SSB may further include a protective film or other components not shown. <Configuration of inspection equipment> The configuration of the inspection apparatus INA will be described with reference to Figures 1 to 3. As shown in Figure 1, the inspection apparatus INA mainly includes a probe card PRC, a first holding part VM1, a second holding part VM2, and a cleaning substrate CSB.

[0017] In this specification, the cleaning substrate CSB refers to a member that is harder than a typical cleaning sheet made of a resin (e.g., silicone resin) containing abrasive grains (e.g., aluminum oxide). The hardness of the material that makes up the cleaning substrate CSB is higher than the hardness of the resin material that mainly makes up the cleaning sheet. The cleaning substrate CSB has a cleaning surface CSF and a back surface BSF located opposite the cleaning surface CSF. The hardness of the cleaning surface CSF is higher than the hardness of the polishing surface of the cleaning sheet.

[0018] The probe card PRC has a plurality of probes PR. In the inspection apparatus INA, the probe card PRC is detachably held, for example, in a holding section (not shown). The probe card PRC can be arbitrarily selected from a plurality of types of probe cards PRC depending on, for example, the semiconductor device to be inspected. In other words, in the embodiment of the present disclosure, the types of the probes PR and probe cards PRC to be cleaned are not particularly limited.

[0019] The plurality of probes PR extend, for example, parallel to one another. The plurality of probes PR are arranged, for example, spaced apart from one another in at least one direction perpendicular to the direction in which each of the plurality of probes PR extends. The plurality of probes PR may also be arranged, for example, spaced apart from one another in two directions perpendicular to the direction in which each of the plurality of probes PR extends and perpendicular to the direction in which each of the plurality of probes PR extends. The plurality of probes PR extend, for example, along a second direction DR2 perpendicular to a second mounting surface VSF2 described below, and are arranged, for example, spaced apart from one another in a first direction DR1 along the second mounting surface VSF2.

[0020] The first holding unit VM1 detachably holds the semiconductor substrate SSB. The first holding unit VM1 has a first mounting surface VSF1 on which the second main surface MSF2 of the semiconductor substrate SSB is placed. The first holding unit VM1 further has, for example, a first groove VSG1, a plurality of first intake ports IN1, a first exhaust port OT1, and a first intake path CD1 connecting the plurality of first intake ports IN1 and the first exhaust port OT1. The first groove VSG1 is recessed with respect to the first mounting surface VSF1. The plurality of first intake ports IN1 open into the first groove VSG1. The first exhaust port OT1 is connected to a first pump VP1 via a first exhaust pipe VT1. As a result, when the first pump VP1 is driven, the second main surface MSF2 of the semiconductor substrate SSB placed on the first mounting surface VSF1 is sucked onto the first mounting surface VSF1.

[0021] The second holder VM2 detachably holds the cleaning substrate CSB. The second holder VM2 has a second mounting surface VSF2 on which the back surface BSF of the cleaning substrate CSB is placed. The second holder VM2 further has a second groove VSG2 and, for example, a plurality of second intake ports IN2, a second exhaust port OT2, and a second intake path CD2 connecting the plurality of second intake ports IN2 and the second exhaust port OT2. The second groove VSG2 is recessed with respect to the second mounting surface VSF2. The plurality of second intake ports IN2 open into the second groove VSG2. The second exhaust port OT2 is connected to a second pump VP2 via a second exhaust pipe VT2. As a result, when the second pump VP2 is driven, the back surface BSF of the cleaning substrate CSB placed on the second mounting surface VSF2 is sucked onto the second mounting surface VSF2. Preferably, the cleaning substrate CSB is provided so as to overlap the entire second groove portion VG2.

[0022] The hardness of the second mounting surface VSF2 of the second holding member VM2 is equal to or harder than the hardness of the cleaning surface CSF of the cleaning substrate CSB. The hardness of the second mounting surface VSF2 of the second holding member VM2 is equal to, for example, the hardness of the first mounting surface VSF1 of the first holding member VM1.

[0023] The second holder VM2 is arranged next to the first holder VM1 in a first direction DR1 along the second mounting surface VSF2. The first direction DR1 is, for example, horizontal. The second mounting surface VSF2 is, for example, parallel to the first mounting surface VSF1.

[0024] The first holding unit VM1 and the second holding unit VM2 are movable relative to the probe card PRC. The inspection device INA includes at least one of a first driving unit that moves the first holding unit VM1 and the second holding unit VM2 integrally with respect to the probe card PRC, and a second driving unit that moves the probe card PRC relative to the first holding unit VM1 and the second holding unit VM2. The inspection device INA includes, for example, only the first driving unit.

[0025] A specific example of the second holding unit VM2 will be described with reference to FIGS. As shown in FIG. 2, the second holder VM2 has a base VCB and a suction unit VCU.

[0026] The suction unit VCU has a second placement surface VSF2 and a back surface BSF2 located opposite the second placement surface VSF2. The suction unit VCU further has a plurality of second intake ports IN2, a plurality of third exhaust ports OT3 opening on the back surface BSF2, and a plurality of third intake channels CD3 connecting each of the second intake ports IN2 and each of the third exhaust ports OT3. Each of the third intake channels CD3 extends, for example, along the second direction DR2. Each of the third intake channels CD3 is formed, for example, inside a through-hole penetrating the suction unit VCU in the second direction DR2. Note that each of the third intake channels CD3 may extend in a direction intersecting the second direction DR2. A portion of each of the third intake channels CD3 may extend along the first direction DR1.

[0027] The bottom surfaces of the second grooves VG2 extend along the first direction DR1. The bottom surfaces of the second grooves VSG2 extend, for example, parallel to the first direction DR1. The opening diameter of each of the second intake ports IN2 is equal to or smaller than the distance between the inner circumferential surfaces of the second grooves VG2 that face each other in a direction perpendicular to the extension direction of the second grooves VG2 (hereinafter referred to as the width of the second grooves VG2).

[0028] The material forming the suction unit VCU is, for example, a metal material, which is the same as the material forming the first holding part VM1.

[0029] The base VCB has a third mounting surface VSF3, at least one third intake port IN3, a second exhaust port OT2, and at least one fourth intake channel CD4 connecting the at least one third intake port IN3 and the second exhaust port OT2. The third mounting surface VSF3 is the surface on which the back surface BSF2 of the suction unit VCU is mounted. The at least one third intake port IN3 is arranged to overlap each of the multiple third exhaust ports OT3 of the suction unit VCU. As a result, the at least one fourth intake channel CD4 is in communication with each of the multiple third intake channels CD3 included in the suction unit VCU.

[0030] The base VCB further has, for example, a third groove VG3 recessed relative to the third mounting surface VSF3. The third groove VG3 faces each of the multiple third exhaust ports OT3 and also faces a portion of the back surface BSF2 of the suction unit VCU. An open end of the third groove VG3 in the third mounting surface VSF3 forms a third intake port IN3. At least one fourth intake passage CD4 is formed, for example, by the third groove VG3 and a hole VH having one end opening to the bottom surface of the third groove VG3 and the other end connected to the second exhaust port OT2. The third mounting surface VSF3 of the base VCB acts as a suction surface that suctions the back surface BSF of the suction unit VCU when the second pump VP2 (see FIG. 1) is driven.

[0031] From a different perspective, the second intake passage CD2 is connected between the second intake ports IN2 and the second exhaust port OT2, and has a confluence portion where the air taken in from the second intake ports IN2 joins together. In the second holding portion VM2 shown in Figures 1 and 2, the confluence portion is configured as a third groove portion VG3.

[0032] The hardness of the third mounting surface VSF3 of the base base VCB is equal to or harder than the hardness of the cleaning surface CSF of the cleaning substrate CSB. The material constituting the base base VCB is, for example, a metal material. The material constituting the base base VCB is, for example, the same as the material constituting the first holding part VM1.

[0033] 3, the second groove portion VG2 has a plurality of first groove portions VG2A and a plurality of second groove portions VG2B. In a plan view, each of the plurality of first groove portions VG2A extends along a radial direction with respect to a reference point P of the second mounting surface VSF2 and is arranged at intervals from one another in the circumferential direction with respect to the reference point P.

[0034] In a plan view, each of the second groove portions VG2B is provided in an annular shape around the reference point P and intersects with each of the first groove portions VG2A. Preferably, each of the second intake ports IN2 opens into at least one of a plurality of intersection regions in the second groove portion VG2 where each of the first groove portions VG2A intersects with each of the second groove portions VG2B. As shown in Fig. 3, each of the second intake ports IN2 opens into only a portion of the plurality of intersection regions, for example.

[0035] Each of the second intake ports IN2 may open into a region of the second groove portion VG2 that extends between two adjacent intersection regions.

[0036] In a plan view, the plurality of first groove portions VG2A are, for example, perpendicular to one another. In a plan view, the plurality of second groove portions VG2B extend, for example, linearly. In a plan view, the plurality of second groove portions VG2B are, for example, connected to one another in an angular annular shape. The extension direction of some of the plurality of second groove portions VG2B is, for example, perpendicular to the extension direction of other of the plurality of second groove portions VG2B.

[0037] The widths of the multiple second groove portions VG2 are, for example, constant. The widths of the multiple first groove portions VG2A are, for example, equal to each other. The widths of the multiple second groove portions VG2B are, for example, equal to each other. The widths of the multiple first groove portions VG2A are, for example, equal to the widths of the multiple second groove portions VG2B.

[0038] The distance in the second direction DR2 between the second mounting surface VSF2 and the bottom surface of the second groove portion VG2 (hereinafter referred to as the depth of the second groove portion VG2) is, for example, constant. The depths of the multiple first groove portions VG2A are, for example, equal to each other. The depths of the multiple second groove portions VG2B are, for example, equal to each other. The depths of the multiple first groove portions VG2A are, for example, equal to the depths of the multiple second groove portions VG2B.

[0039] <Method of manufacturing a semiconductor device> A method for manufacturing a semiconductor device according to an embodiment of the present disclosure will be described with reference to Figures 1 and 4 to 6. Note that the first pump VP1 and other components are omitted from Figures 4 to 6.

[0040] In the semiconductor device manufacturing method, first, the semiconductor substrate SSB and the inspection device INA shown in FIG. 1 are prepared. The semiconductor substrate SSB prepared in this process has a semiconductor element, a plurality of pads PAD, and a plurality of bumps BMP formed thereon. In this process, for example, the semiconductor substrate SSB is transported onto the first mounting surface VSF1 of the first holding unit VM1 of the inspection device INA and is adsorbed thereon. In this process, the cleaning substrate CSB is held by the second holding unit VM2. In this process, the probe card PRC may be disposed in a position relative to the first holding unit VM1 that does not interfere with the transport of the semiconductor substrate SSB.

[0041] Second, after the first step, as shown in FIG. 4, the multiple probes PR are cleaned using the cleaning substrate CSB held by the second holder VM2. In this step, first, each of the multiple probes PR is positioned so as to overlap the cleaning surface CSF of the cleaning substrate CSB in the second direction DR2. Next, a state (second state) in which the tip of each of the multiple probes PR is in contact with the cleaning surface CSF is realized. Next, one of the probe card PRC and the second holder VM2 moves relative to the other in a direction along the cleaning surface CSF, causing the tip of each of the multiple probes PR and the cleaning surface CSF to slide relative to the other. This removes any foreign matter adhering to the tip of each of the multiple probes PR, and the tip of each of the multiple probes PR is cleaned. After this step is completed, the probe card PRC moves relative to the second holder VM2, and the tip of each of the multiple probes PR is no longer in contact with the cleaning surface CSF.

[0042] Third, after the second step, the electrical characteristics of the semiconductor element included in the semiconductor substrate SSB are inspected as shown in FIG. 6 through the moving step shown in FIG. 5. By the moving step shown in FIG. 5, each of the multiple probes PR is positioned so as to overlap with each of the multiple bumps BMP of the semiconductor substrate SSB held by the first holding unit VM1 in the second direction DR2. Next, a state (first state) is achieved in which the tip of each of the multiple probes PR is in contact with the multiple bumps BMP. Each of the multiple probes PR deforms each of the multiple bumps BMP. Each of the multiple probes PR is electrically connected to the semiconductor element via each of the multiple bumps BMP and the multiple pads PAD. Next, the electrical characteristics of the semiconductor element are inspected using the multiple probes PR.

[0043] When one semiconductor substrate SSB has multiple semiconductor elements, this process is performed on all semiconductor elements to be inspected on that one semiconductor substrate SSB. After this process is completed, the semiconductor substrate SSB is unloaded from the inspection equipment INA. After this process is completed, the cleaning substrate CSB may be unloaded from the inspection equipment INA or may continue to be held in the second holding unit VM2.

[0044] Fourth, after the third step, the semiconductor substrate SSB is subjected to an arbitrary processing. In this step, the arbitrary processing may be performed based on the inspection results of the third step. In this step, the semiconductor substrate SSB may be diced to separate each of the plurality of semiconductor elements.

[0045] By the above-described method for manufacturing a semiconductor device, a semiconductor device can be manufactured from the semiconductor element included in the semiconductor substrate SSB.

[0046] <Method for inspecting semiconductor device> The semiconductor device inspection method according to the embodiment of the present disclosure includes the first to third steps of the semiconductor device manufacturing method described above. By using such a semiconductor device inspection method, electrical characteristics of the semiconductor elements included in the semiconductor substrate SSB can be inspected.

[0047] <Effects> The effects of the inspection apparatus INA according to this embodiment and the semiconductor device manufacturing method using the inspection apparatus INA will be described below in comparison with a comparative example shown in FIG. 9. In FIG. 9, in the inspection apparatus of the comparative example, which includes a probe card, an inspection stage on which a semiconductor substrate is placed, a cleaning stage, and a cleaning sheet attached to the cleaning stage, multiple probes of a probe card PRC are pressed against a cleaning sheet CST. As described above, a typical cleaning sheet CST is made of a resin (e.g., silicone resin) containing abrasive grains (e.g., aluminum oxide). Therefore, when multiple probes are pressed against the cleaning sheet CST, the areas of the cleaning sheet CST pressed against the multiple probes sink more than the other areas. At this time, a probe PR1 located at the center of the multiple probes is pressed against the cleaning sheet CST together with the other multiple probes arranged adjacent to the probe PR1. The area of ​​the cleaning sheet CST pressed against the probe PR1 (hereinafter referred to as the first area) sinks together with the area surrounding the first area, i.e., the area pressed against the other probes adjacent to the probe PR1 (hereinafter referred to as the first peripheral area). On the other hand, the area of ​​the cleaning sheet CST pressed against the outermost probe PR2 (hereinafter referred to as the second area) of the multiple probes is adjacent to the area not pressed against the probe (hereinafter referred to as the second peripheral area). Therefore, the amount by which the second area of ​​the cleaning sheet CST sinks relative to the second peripheral area is greater than the amount by which the first area of ​​the cleaning sheet CST sinks relative to the first peripheral area. As a result, the frictional force generated between the probe PR2 and the second area of ​​the cleaning sheet CST is greater than the frictional force generated between the probe PR1 and the first area of ​​the cleaning sheet CST. The amount of wear at the tip of the probe PR2 is greater than the amount of wear at the tip of the probe PR1. Therefore, the inspection device of the comparative example has a problem that the life of the probe card is short.The manufacturing method of the semiconductor device using the inspection device of the comparative example has a problem that poor contact between the probe PR2 and the bumps is likely to occur.

[0048] One solution to this problem is to use a cleaning substrate CSB instead of the cleaning sheet CST as a cleaning member. The cleaning substrate CSB must be securely held in the inspection device during the cleaning process to properly clean the multiple probes. On the other hand, the cleaning substrate CSB must be easily removed from the inspection device during maintenance to remove foreign matter transferred from the probes. The cleaning stage of the comparative inspection device does not have a structure for detachably holding the cleaning substrate CSB. To use the cleaning substrate CSB in the comparative inspection device, the cleaning substrate CSB must be held on the inspection stage. This method requires a step of removing one of the cleaning substrate CSB and the semiconductor substrate from the inspection stage and a step of loading the other of the cleaning substrate CSB and the semiconductor substrate onto the inspection stage between the step of cleaning the multiple probes with the cleaning substrate CSB and the step of inspecting the electrical characteristics of the semiconductor element. As a result, the throughput of the semiconductor device manufacturing method and inspection method using the cleaning substrate CSB in the comparative inspection device is significantly lower than the throughput of the semiconductor device manufacturing method and inspection method using the cleaning sheet CST in the comparative inspection device.

[0049] In contrast, the inspection device INA includes a first holder VM1 that detachably holds the semiconductor substrate SSB and a second holder VM2 that detachably holds the cleaning substrate CSB. Therefore, in a semiconductor device manufacturing method using the inspection device INA, multiple probes PR can be cleaned using the cleaning substrate CSB held by the second holder VM2. Therefore, in the inspection device INA, the variation in the amount of scraping among the multiple probes PR can be reduced compared to when the cleaning sheet CST is used as the cleaning member in the comparative example. As a result, the life of the probe card PRC of the inspection device INA is longer compared to when the cleaning sheet CST is used in the inspection device of the comparative example. Furthermore, in the semiconductor device manufacturing and inspection methods using the inspection device INA, the process of loading and unloading the cleaning substrate CSB and the semiconductor substrate between the second and third steps is not required. As a result, the throughput of the semiconductor device manufacturing and inspection methods using the inspection device INA is significantly improved compared to the throughput of the semiconductor device manufacturing and inspection methods using the cleaning substrate CSB in the inspection device of the comparative example. Furthermore, according to the manufacturing method and inspection method for a semiconductor device using the inspection device INA, the electrical characteristics of the semiconductor element are inspected using a probe PR from which foreign matter has been removed, thereby suppressing the occurrence of inspection defects caused by foreign matter.

[0050] In the inspection apparatus INA, the second holder VM2 has a second mounting surface VSF2 on which the cleaning substrate CSB is mounted, a second groove VG2 recessed relative to the second mounting surface VSF2, and a second intake passage CD2 having multiple second intake ports IN2 opening into the second groove VG2. This second holder VM2 is capable of vacuum-sucking the cleaning substrate CSB. In other words, the second holder VM2 can easily switch between an ON state, in which a holding force required to properly clean the multiple probes is applied between the second holder VM2 and the cleaning substrate CSB, and an OFF state, in which the holding force is not applied between the second holder VM2 and the cleaning substrate CSB.

[0051] In the inspection device INA, the second groove portion VG2 has a plurality of first groove portions VG2A and a plurality of second groove portions VG2B that communicate with each other. In a plan view, each of the plurality of first groove portions VG2A extends radially relative to a reference point P of the second mounting surface VSF2 and is spaced apart from each other in the circumferential direction relative to the reference point P. In a plan view, each of the plurality of second groove portions VSF2B is formed in an annular shape around the reference point P and intersects with each of the plurality of first groove portions VG2A. The second intake passage CD2 opens into a region in the second groove portion VG2 where each of the plurality of first groove portions VG2A intersects with each of the plurality of second groove portions VG2B. In this manner, the cleaning substrate CSB is placed on the second mounting surface VSF2 so as to overlap the entire second groove portion VG2, thereby providing a sufficient holding force between the second mounting surface VSF2 and the back surface BSF of the cleaning substrate CSB.

[0052] In the inspection device INA, the second intake passage CD2 has a confluence portion where air drawn in from the multiple second intake ports IN2 converges. The second holding portion VM2 has a third groove portion VG3 that acts as the confluence portion. In this way, multiple second intake ports IN2 can be connected to one second exhaust port OT2.

[0053] In the inspection apparatus INA, the material constituting the cleaning substrate CSB is harder than the material constituting the bumps BMP of the semiconductor substrate SSB, so that foreign matter originating from the bumps BMP and adhering to the probes PR can be easily removed by a cleaning process using the cleaning substrate CSB.

[0054] In the inspection device INA, the first holding unit VM1 and the second holding unit VM2 are movable relative to the probe card PRC and are arranged side by side in a first direction DR1 that intersects with the extending direction of each of the plurality of probes PR. In this way, in the semiconductor device manufacturing method and inspection method using the inspection device INA, switching between the second step and the third step can be performed smoothly.

[0055] In the semiconductor device manufacturing and inspection methods using the above-described inspection apparatus INA, in the third step of inspecting the electrical characteristics of the semiconductor element, each of the multiple probes PR presses and deforms each of the multiple bumps BMP, and then the electrical characteristics of the semiconductor element are inspected via the multiple bumps BMP. In this inspection step, foreign matter originating from the bumps BMP is likely to adhere to each of the multiple probes PR. In other words, in semiconductor device manufacturing and inspection methods using a semiconductor substrate SSB with bumps BMP, foreign matter is more likely to adhere to each of the multiple probes PR than in semiconductor device manufacturing and inspection methods using a semiconductor substrate without bumps BMP, and the frequency of cleaning the probes PR tends to be higher. According to the semiconductor device manufacturing and inspection methods of this embodiment, by using the inspection apparatus INA, foreign matter can be removed without reducing throughput, as described above. Therefore, the inspection apparatus INA is particularly suitable for semiconductor device manufacturing and inspection methods using a semiconductor substrate SSB with bumps BMP.

[0056] In the inspection apparatus INA, the second holder VM2 includes a base VCB and a suction unit VCU. The suction unit VCU has a second mounting surface VSF2, a second groove VG2, multiple intake ports IN2, and a third intake passage CD3 that is a part of the second intake passage CD2. The base VCB has at least one exhaust port OT2 and a fourth intake passage CD4 that is the remainder of the second intake passage C2. The third groove VG3 included in the fourth suction passage CD4 is connected to the third intake passage CD3 and faces the back surface VSF2 of the suction unit VCU. In this second holder VM2, when the second pump VP2 is driven, the second mounting surface VSF2 acts as a suction surface that suctions the cleaning substrate CSB, and the third mounting surface VSF3, into which the third groove VG3 opens, can act as a suction surface that suctions the suction unit VCU.

[0057] <Modifications of the inspection device, semiconductor device manufacturing method, and inspection method> 7, each of the second intake ports IN2 may be open to all of the intersection regions of the second groove portion VG2 where each of the first groove portions VG2A intersects with each of the second groove portions VG2B. The second intake port IN2 may be open to the intersection region where the first groove portions VG2A intersect at the reference point P.

[0058] The planar shape of the second groove portion VG2 is not particularly limited. As shown in Figures 3 and 7, the multiple second groove portions VG2B may extend linearly, or as shown in Figure 8, they may extend circumferentially around a reference point P on the second placement surface VSF2. In either case, a sufficient holding force can be applied between the second placement surface VSF2 and the back surface BSF of the cleaning substrate CSB. The reference point P on the second placement surface VSF2 may be any point on the second placement surface VSF2, such as the center of the second placement surface VSF2 in a plan view.

[0059] The number and arrangement of the second intake ports IN2 are not particularly limited. The number and arrangement of the exhaust ports OT3 in the adsorption unit VCU are not particularly limited. The adsorption unit VCU only needs to have at least one exhaust port OT3. The adsorption unit VCU may have the above-mentioned confluence portion.

[0060] If the semiconductor substrate SSB has a first semiconductor element and a second semiconductor element, the third step may include an intermediate cleaning step of cleaning the probes PR using the cleaning substrate CSB held by the second holder VM2 between the first inspection step of inspecting the electrical characteristics of the first semiconductor element and the second inspection step of inspecting the electrical characteristics of the second semiconductor element. The intermediate cleaning step may be performed in the same manner as the second step shown in FIG. 4. According to a semiconductor device manufacturing method including the intermediate cleaning step, after the second step, it is not necessary to load and unload each of the semiconductor substrate SSB and the cleaning substrate CSB into and out of the inspection apparatus INA until the third step is completed. As a result, a decrease in throughput in the third step can be suppressed.

[0061] In particular, in a manufacturing method and an inspection method for a semiconductor device using a semiconductor substrate SSB having bumps BMP, it is usually necessary to remove foreign matter adhering to each of the multiple probes PR before completing inspection of all semiconductor elements included in one semiconductor substrate SSB. In a manufacturing method and an inspection method for a semiconductor device using an inspection device INA, even if multiple intermediate cleaning steps are performed in the third step, a decrease in throughput can be suppressed.

[0062] In the above-described semiconductor device manufacturing method and inspection method, the second step is performed after the first step and before the third step, but is not limited to this. The second step may be performed after the third step. In this way, foreign matter adhering to the plurality of probes PR in the third step can be removed without leaving a time gap. Furthermore, in the semiconductor device manufacturing method and inspection method, the second step may be performed after the first step and before the third step, and may be performed again after the third step.

[0063] The present disclosure is suitable not only for semiconductor devices with bumps (BMPs), but also for semiconductor devices without bumps. In on-wafer inspection of semiconductor substrates without bumps, multiple probes come into contact with the pads. At this time, the metal material constituting the pads adheres to the probes as foreign matter. The present disclosure is also suitable for semiconductor device manufacturing and inspection methods that include a cleaning step for removing foreign matter originating from the pads, as well as foreign matter originating from the bumps, and for inspection devices used in the cleaning step.

[0064] The invention made by the inventor has been specifically described above based on an embodiment, but it goes without saying that the present invention is not limited to the above embodiment and can be modified in various ways without departing from the gist of the invention. [Explanation of symbols]

[0065] BMP bump, BSF, BSF2 backside, CD1 first intake passage, CD2 second intake passage, CD3 third intake passage, CD4 fourth intake passage, CSB cleaning substrate, IN1 first intake port, IN2 second intake port, IN3 third intake port, INA inspection equipment, MSF1 first main surface, MSF2 second main surface, OT1 first exhaust port, OT2 second exhaust port, OT3 third exhaust port, P reference point, PAD pad, PR, PR1, PR2 probe, PRC probe card, SSB semiconductor substrate, VCB base, VCU suction unit, VG2 second groove portion, VG2A first groove portion, VG2B second groove portion, VG3 third groove portion, VH hole portion, VM1 first holding portion, VM2 second holding portion, VP1 first pump, VP2 second pump, VSF1 first mounting surface, VSF2 Second mounting surface, VSF2B second groove portion, VSF3 third mounting surface, VSG1 first groove portion, VSG2 second groove portion, VT1 first exhaust pipe, VT2 second exhaust pipe.

Claims

1. providing a semiconductor substrate and an inspection device; In the preparing step, the semiconductor substrate has a semiconductor element, a plurality of pads electrically connected to the semiconductor element, and a plurality of bumps disposed on each of the plurality of pads; the inspection device includes a probe card having a plurality of probes, a first holding unit that detachably holds the semiconductor substrate, a cleaning substrate that cleans the plurality of probes, and a second holding unit that detachably holds the cleaning substrate, the first holding unit and the second holding unit being movable relative to the probe card; cleaning the plurality of probes using the cleaning substrate held by the second holding unit in the inspection device; a step of inspecting electrical characteristics of the semiconductor element by bringing the plurality of probes into contact with the plurality of bumps of the semiconductor substrate held by the first holding unit after the cleaning step; a step of processing the semiconductor substrate after the step of inspecting.

2. the second holding portion has a mounting surface on which the cleaning substrate is placed, a groove portion recessed relative to the mounting surface, a plurality of air intake ports opening into the groove portion, at least one air exhaust port opening outside the groove portion, and an air intake path connecting the plurality of air intake ports and the at least one air exhaust port; 2. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of cleaning the plurality of probes, the cleaning substrate is vacuum-sucked to the second holding portion.

3. the groove portion has a plurality of first groove portions and a plurality of second groove portions that are in communication with each other, In a plan view, each of the plurality of first groove portions extends along a radial direction relative to a reference point on the mounting surface and is spaced apart from one another in a circumferential direction relative to the reference point, In the plan view, each of the plurality of second groove portions is provided in a ring shape around the reference point and intersects with each of the plurality of first groove portions, the intake passage opens into a region in the groove where each of the plurality of first groove portions intersects with each of the plurality of second groove portions, 3. The method for manufacturing a semiconductor device according to claim 2, wherein in the step of cleaning the plurality of probes, the cleaning substrate is arranged so as to overlap the entirety of the plurality of first groove portions and the entirety of the plurality of second groove portions.

4. The method for manufacturing a semiconductor device according to claim 3 , wherein each of the plurality of second trench portions extends linearly in the plan view.

5. 4. The method for manufacturing a semiconductor device according to claim 3, wherein, in the plan view, each of the plurality of second groove portions extends circumferentially around the reference point.

6. 4. The method for manufacturing a semiconductor device according to claim 3, wherein the air intake path is connected between the plurality of air intake ports and the at least one air exhaust port, and has a confluence portion where air drawn in from the plurality of air intake ports converges.

7. The method for manufacturing a semiconductor device according to claim 1 , wherein the material constituting the cleaning substrate is harder than the material constituting the plurality of bumps.

8. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the first holding portion and the second holding portion are arranged side by side in a direction intersecting with an extension direction of each of the plurality of probes.

9. In the preparing step, the semiconductor substrate has a plurality of the semiconductor elements, the plurality of semiconductor elements having a first semiconductor element and a second semiconductor element; The step of inspecting the electrical characteristics of the semiconductor device includes: a first inspection step of inspecting electrical characteristics of the first semiconductor element; a second inspection step of inspecting electrical characteristics of the second semiconductor element using the cleaning substrate held by the second holding unit; 2. The method for manufacturing a semiconductor device according to claim 1, further comprising an intermediate cleaning step for cleaning said plurality of probes between said first inspection step and said second inspection step.

10. 2. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of inspecting the electrical characteristics of the semiconductor element, each of the plurality of probes presses and deforms each of the plurality of bumps, and then the electrical characteristics of the semiconductor element are inspected via the plurality of bumps.

11. A method for testing a semiconductor device included in a semiconductor substrate, comprising: providing a semiconductor substrate having a plurality of pads electrically connected to the semiconductor element and a plurality of bumps disposed on each of the plurality of pads, and an inspection device; the inspection device includes a probe card having a plurality of probes, a first holding unit that detachably holds the semiconductor substrate, a cleaning substrate that cleans the plurality of probes, and a second holding unit that detachably holds the cleaning substrate, the first holding unit and the second holding unit being movable relative to the probe card; cleaning the plurality of probes using the cleaning substrate held by the second holding unit in the inspection device; and after the cleaning step, bringing the plurality of probes into contact with the plurality of bumps on the semiconductor substrate held by the first holding part, thereby inspecting electrical characteristics of the semiconductor element.

12. In the preparing step, the semiconductor substrate has a plurality of the semiconductor elements, the plurality of semiconductor elements having a first semiconductor element and a second semiconductor element; The step of inspecting the electrical characteristics of the semiconductor device includes: a first inspection step of inspecting electrical characteristics of the first semiconductor element; a second inspection step of inspecting electrical characteristics of the second semiconductor element; 12. The semiconductor device inspection method according to claim 11, further comprising an intermediate cleaning step between the first inspection step and the second inspection step, in which the plurality of probes are cleaned using the cleaning substrate held by the second holder.

13. An inspection apparatus for inspecting electrical characteristics of a semiconductor element, a probe card having a plurality of probes; a first holding part that detachably holds a semiconductor substrate having the semiconductor element, a plurality of pads electrically connected to the semiconductor element, and a plurality of bumps disposed on each of the plurality of pads; a cleaning substrate for cleaning the plurality of probes; a second holding portion that detachably holds the cleaning substrate; the first holding portion and the second holding portion are movable relative to the probe card, an inspection device that is switchable between a first state in which the plurality of probes are in contact with the plurality of bumps of the semiconductor substrate held by the first holding unit, and a second state in which the plurality of probes are in contact with the cleaning substrate held by the second holding unit.

14. 14. The inspection device of claim 13, wherein the second holding portion has a mounting surface on which the cleaning substrate is placed, a groove portion recessed relative to the mounting surface, a plurality of air intake ports opening into the groove portion, at least one exhaust port opening outside the groove portion, and an air intake path connecting the plurality of air intake ports and the at least one exhaust port.

15. the groove portion has a plurality of first groove portions and a plurality of second groove portions that are in communication with each other, In a plan view, each of the plurality of first groove portions extends along a radial direction relative to a reference point on the mounting surface and is spaced apart from one another in a circumferential direction relative to the reference point, In the plan view, each of the plurality of second groove portions is provided in a ring shape around the reference point and intersects with each of the plurality of first groove portions, The inspection device according to claim 14 , wherein the intake passage opens into an area in the groove where each of the plurality of first groove portions intersects with each of the plurality of second groove portions.

16. The inspection device according to claim 15 , wherein each of the second groove portions extends linearly in the plan view.

17. The inspection device according to claim 15 , wherein, in the plan view, each of the plurality of second groove portions extends circumferentially around the reference point.

18. 16. The inspection device according to claim 15, wherein the air intake path is connected between the plurality of air intake ports and the at least one air exhaust port, and has a confluence portion where air drawn in from the plurality of air intake ports converges.

19. the second holding section includes a suction unit having the placement surface, the groove, the plurality of air intake ports, and a portion of the air intake path, and a base having the at least one air exhaust port and a remaining portion of the air intake path, The inspection device according to claim 14 , wherein the remaining portion of the air intake passage is continuous with the portion of the air intake passage and faces a surface of the suction unit other than the placement surface.

20. a material constituting the cleaning substrate is harder than a material constituting the plurality of bumps; 14. The inspection apparatus of claim 13, wherein the cleaning substrate has a sandblasted surface.

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