Method for molding, and molded article

Abstract

To provide a technology for molding a member having resistance to processing and electrical conductivity.SOLUTION: The method for molding relating to the technology disclosed in the present specification is a method for molding a molded article used in a substrate processing apparatus. The molding method includes the step of irradiating an electron beam onto a molded article in which a carbon material is blended into polytetrafluoroethylene or a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The technology disclosed in this specification relates to molded products used in substrate processing equipment. The substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal displays, substrates for flat panel displays (FPDs) such as organic electroluminescence (EL) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FEDs), and substrates for solar cells. [Background technology]

[0002] In substrate processing, it is desirable to suppress the charging of the substrate. For this purpose, Patent Document 1 mentions that the chuck member that holds the substrate is required to be electrically conductive. For example, Patent Document 1 proposes using a composite material for the chuck member that includes carbon, exemplified by carbon fiber, and a synthetic resin, exemplified by a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether (commonly known as perfluoroalkoxy alkane: "PFA," and this common name will be used hereinafter).

[0003] Patent Document 2 mentions that a molded article made of a copolymer of tetrafluoroethylene and ethylene (commonly known as Ethylene-Tetrafluoroethylene: "ETFE," and this common name will be used hereinafter) is irradiated with an electron beam to improve the wear resistance of a chuck pin. This improvement in wear resistance is thought to be due to the crosslinked structure of ETFE. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2019-220528 [Patent Document 2] Japanese Patent Application Publication No. 2023-68789 Summary of the Invention [Problem to be solved by the invention]

[0005] However, as pointed out in Patent Document 1, the lifespan of the chuck member can be shortened depending on the type and temperature of the processing liquid. For example, when performing resist removal processing on a substrate, a sulfuric acid-hydrogen peroxide mixture (also commonly known as "SPM," and this common name will be used hereinafter) at 200°C may be used. ETFE, which is given as an example of a chuck member in Patent Document 2, may have a melting point of around 220°C. Therefore, in this case, it is unclear whether the shortening of the lifespan caused by high-temperature chemical processing, such as SPM at 200°C or higher, can be suppressed.

[0006] The technology disclosed in the present specification has been made in consideration of the problems described above, and is a technology for forming a member that has conductivity even when subjected to high-temperature processing. [Means for solving the problem]

[0007] A molding method that is a first aspect of the technology disclosed in the present specification is a molding method for molding a molded product to be used in a substrate processing apparatus, and includes a step of irradiating the molded product, which is made by blending polytetrafluoroethylene or a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether with a carbon material, with an electron beam.

[0008] A molding method that is a second aspect of the technology disclosed in the present specification is related to the molding method that is the first aspect, in which the carbon material includes powdered carbon black.

[0009] A molding method as a third aspect of the technology disclosed in the present specification is related to the molding method as the first or second aspect, in which the molded product is a chuck pin that holds a substrate in the substrate processing apparatus.

[0010] The molded article, which is a fourth aspect of the technology disclosed in the present specification, is a molded article used in a substrate processing apparatus, and is irradiated with an electron beam while a carbon material is blended with polytetrafluoroethylene or a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether. [Effects of the Invention]

[0011] According to at least the first and fourth aspects of the technique disclosed in the present specification, it is possible to form a member that remains conductive even after being treated with a high-temperature chemical solution.

[0012] Furthermore, objects, features, aspects, and advantages associated with the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus according to an embodiment; [Figure 2] 2 is a diagram illustrating an example of the configuration of a control unit illustrated in FIG. 1. FIG. [Figure 3] 1 is a diagram schematically illustrating an example of the configuration of a processing unit in a substrate processing apparatus according to an embodiment. [Figure 4] 10A and 10B are cross-sectional views showing an example of the configuration of a chuck pin. [Figure 5] 10 is a flowchart illustrating an example of substrate processing in a processing unit. [Figure 6] 1 is a flowchart illustrating a manufacturing process of a molded product. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features are shown for the purpose of explaining the technology, but these are merely examples and are not necessarily essential features for enabling the embodiments to be implemented.

[0015] The drawings are schematic, and for the sake of convenience, components may be omitted or simplified as appropriate. The relative sizes and positions of components shown in different drawings are not necessarily accurately depicted and may be changed as appropriate. Hatching may also be used in drawings such as plan views that are not cross-sectional views to facilitate understanding of the embodiments.

[0016] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions of them may be omitted to avoid duplication.

[0017] Furthermore, in the description given in this specification, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

[0018] Furthermore, although ordinal numbers such as "first" or "second" may be used in the descriptions in this specification, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and the contents of the embodiments are not limited to the order that may result from these ordinal numbers.

[0019] Furthermore, in the description provided in this specification, terms that indicate specific positions or directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," may be used, but these terms are used for convenience to facilitate understanding of the contents of the embodiments and have no relation to the positions or directions when the embodiments are actually implemented.

[0020] <Embodiment> The molded product and the molding method thereof according to this embodiment will be described below.

[0021] <Configuration of the substrate processing apparatus> 1 is a plan view schematically illustrating an example of the configuration of a substrate processing apparatus 1 according to this embodiment. The substrate processing apparatus 1 includes a load port 601, an indexer robot 602, a center robot 603, a control unit 90, and at least one processing unit 600 (four processing units 600 in FIG. 1).

[0022] The processing unit 600 is a single-wafer processing apparatus that can be used for substrate processing, and specifically, an apparatus that performs processing to remove organic matter adhering to the substrate W. The organic matter adhering to the substrate W is, for example, a used resist film. The resist film has been used, for example, as an implantation mask for an ion implantation process.

[0023] The processing unit 600 may include a chamber 180. In this case, the atmosphere in the chamber 180 may be controlled by the control unit 90, allowing the processing unit 600 to perform substrate processing in a desired atmosphere.

[0024] The control unit 90 can control the operation of each component in the substrate processing apparatus 1. The carrier C is a container that stores substrates W. The load port 601 is a container holding mechanism that holds multiple carriers C. The indexer robot 602 can transport substrates W between the load port 601 and the substrate platform 604. The center robot 603 can transport substrates W between the substrate platform 604 and the processing unit 600.

[0025] With the above configuration, the indexer robot 602 , the substrate platform 604 and the center robot 603 function as a transport mechanism for transporting substrates W between each processing unit 600 and the load port 601 .

[0026] The unprocessed substrate W is taken out of the carrier C by the indexer robot 602. Then, the unprocessed substrate W is transferred to the center robot 603 via the substrate placement unit 604.

[0027] The center robot 603 carries the unprocessed substrate W into the processing unit 600. Then, the processing unit 600 processes the substrate W.

[0028] The substrate W that has been processed in the processing unit 600 is removed from the processing unit 600 by the center robot 603. Then, the processed substrate W passes through other processing units 600 as necessary, and is then transferred to the indexer robot 602 via the substrate placement part 604. The indexer robot 602 loads the processed substrate W into the carrier C. In this manner, the processing of the substrate W is completed.

[0029] Fig. 2 is a diagram showing an example of the configuration of the control unit 90 shown in Fig. 1. The control unit 90 may be configured by a general computer having electric circuits. Specifically, the control unit 90 includes a central processing unit (CPU) 91, a read only memory (ROM) 92, a random access memory (RAM) 93, a recording device 94, an input unit 96, a display unit 97, and a communication unit 98, as well as a bus line 95 interconnecting these units.

[0030] The ROM 92 stores a basic program. The RAM 93 is used as a work area when the CPU 91 performs predetermined processing. The recording device 94 is composed of a non-volatile recording device such as a flash memory or a hard disk drive. The input unit 96 is composed of various switches or a touch panel, and receives input setting instructions such as processing recipes from the user. The display unit 97 is composed of, for example, a liquid crystal display device and lamps, and displays various information under the control of the CPU 91. The communication unit 98 has a data communication function via a local area network (LAN), etc.

[0031] The recording device 94 has preset therein a plurality of modes for controlling each component in the substrate processing apparatus 1 of FIG. 1. When the CPU 91 executes the processing program 94P, one of the above-described modes is selected, and each component is controlled in that mode. The processing program 94P may be recorded on an external recording medium. Using this recording medium, the processing program 94P can be installed in the control unit 90. Furthermore, some or all of the functions executed by the control unit 90 do not necessarily have to be realized by software, but may be realized by hardware such as a dedicated logic circuit.

[0032] <About the processing unit> 3 is a diagram schematically illustrating an example of the configuration of a processing unit 600 in the substrate processing apparatus 1 according to this embodiment. As shown in FIG. 3, the processing unit 600 is a single-wafer processing apparatus that processes disk-shaped substrates W, such as semiconductor wafers, one by one.

[0033] The substrate processing apparatus 1 includes a plurality of processing units 600 that supply processing liquid to the substrate W, and a control unit 90 that controls the operation of the devices provided in the substrate processing apparatus 1 and the opening and closing of valves.

[0034] The processing unit 600 includes a box-shaped chamber 180 having an internal space, a spin chuck 5 that holds one substrate W in a horizontal position within the chamber 180 and rotates the substrate W around a vertical substrate rotation axis A1 passing through the center of the substrate W, a processing liquid supply device 6 that supplies a processing liquid to the substrate W held on the spin chuck 5, a heating device 7 that heats the substrate W held on the spin chuck 5 from above the substrate W, and a cylindrical cup 8 that surrounds the spin chuck 5 around the substrate rotation axis A1.

[0035] The chamber 180 includes a box-shaped partition 9 that houses the spin chuck 5 and the like, an FFU 10 (fan filter unit) that serves as a blower unit that sends clean air (air filtered by a filter) from the top of the partition 9 into the partition 9, and an exhaust duct 11 that exhausts gas from the chamber 180 from the bottom of the cup 8.

[0036] The FFU 10 is disposed above the partition wall 9. The FFU 10 sends clean air downward into the chamber 180 from the ceiling of the partition wall 9. The exhaust duct 11 is connected to the bottom of the cup 8, and guides the gas in the chamber 180 toward exhaust processing equipment provided in a factory where the substrate processing apparatus 1 is installed. Therefore, a downflow (descending flow) that flows downward within the chamber 180 is formed by the FFU 10 and the exhaust duct 11. The processing of the substrate W is performed in a state where a downflow is formed within the chamber 180.

[0037] The spin chuck 5 includes a disk-shaped spin base 12 held in a horizontal position, a plurality of chuck pins 13 protruding upward from the outer periphery of the upper surface of the spin base 12, and a chuck opening / closing mechanism 14 for opening and closing the plurality of chuck pins 13. The spin chuck 5 further includes a spin shaft 15 extending downward from the center of the spin base 12 along the substrate rotation axis A1, and a spin motor 16 for rotating the spin shaft 15 to rotate the spin base 12 and the chuck pins 13 about the substrate rotation axis A1.

[0038] The outer diameter of the spin base 12 is larger than the diameter of the substrate W. The center line of the spin base 12 is aligned with the substrate rotation axis A1. A plurality of chuck pins 13 are held by the spin base 12 at its outer periphery. The plurality of chuck pins 13 are spaced apart in the circumferential direction C1 (the direction around the substrate rotation axis A1). The chuck pins 13 are rotatable about a pin rotation axis (an axis parallel to the substrate rotation axis A1) relative to the spin base 12 between a closed position in which the chuck pins 13 are pressed against the peripheral edge surface of the substrate W and an open position in which the chuck pins 13 are separated from the peripheral edge surface of the substrate W. The substrate W is held by the plurality of chuck pins 13 with the bottom surface of the substrate W and the top surface of the spin base 12 spaced apart in the vertical direction. When the spin motor 16 rotates the spin shaft 15 in this state, the substrate W rotates together with the spin base 12 and the chuck pins 13 about the substrate rotation axis A1.

[0039] The control unit 90 controls the chuck opening / closing mechanism 14 to switch the state of the multiple chuck pins 13 between a closed state in which the multiple chuck pins 13 grip the substrate W, and an open state in which the grip of the substrate W by the multiple chuck pins 13 is released.

[0040] When the substrate W is transferred to the spin chuck 5, the control unit 90 retracts the chuck pins 13 to the open position. In this state, the control unit 90 causes the transfer robot to place the substrate W on the chuck pins 13.

[0041] After the substrate W is placed on the plurality of chuck pins 13, the control unit 90 moves each of the chuck pins 13 from the open position to the closed position.

[0042] The processing liquid supply device 6 includes a chemical liquid nozzle 17 that ejects a first chemical liquid toward the upper surface of the substrate W, a chemical liquid pipe 18 connected to the chemical liquid nozzle 17, a chemical liquid valve 19 interposed in the chemical liquid pipe 18, a chemical liquid arm 20 having the chemical liquid nozzle 17 attached to its tip, and a nozzle moving device 21 that moves the chemical liquid arm 20 to move the landing position of the first chemical liquid within the upper surface of the substrate W.

[0043] When chemical liquid valve 19 is opened, the first chemical liquid supplied from chemical liquid piping 18 to chemical liquid nozzle 17 is discharged downward from chemical liquid nozzle 17. When chemical liquid valve 19 is closed, the discharge of the first chemical liquid from chemical liquid nozzle 17 stops.

[0044] Nozzle moving device 21 moves chemical liquid nozzle 17 to move the landing position of the first chemical liquid within the upper surface of substrate W. Furthermore, nozzle moving device 21 moves chemical liquid nozzle 17 between a processing position where the first chemical liquid discharged from chemical liquid nozzle 17 lands on the upper surface of substrate W and a retracted position where chemical liquid nozzle 17 is retracted to the periphery of spin chuck 5 in a plan view.

[0045] The processing liquid supply device 6 includes a chemical liquid nozzle 22 that ejects a second chemical liquid toward the upper surface of the substrate W, a chemical liquid pipe 23 connected to the chemical liquid nozzle 22, a chemical liquid valve 24 interposed in the chemical liquid pipe 23, a chemical liquid arm 25 having the chemical liquid nozzle 22 attached to its tip, and a nozzle moving device 26 that moves the landing position of the second chemical liquid within the upper surface of the substrate W by moving the chemical liquid arm 25.

[0046] When chemical liquid valve 24 is opened, the second chemical liquid supplied from chemical liquid piping 23 to chemical liquid nozzle 22 is discharged downward from chemical liquid nozzle 22. When chemical liquid valve 24 is closed, the discharge of the second chemical liquid from chemical liquid nozzle 22 stops.

[0047] Nozzle moving device 26 moves chemical liquid nozzle 22 to move the landing position of the second chemical liquid within the upper surface of substrate W. Furthermore, nozzle moving device 26 moves chemical liquid nozzle 22 between a processing position where the second chemical liquid discharged from chemical liquid nozzle 22 lands on the upper surface of substrate W and a retracted position where chemical liquid nozzle 22 is retracted to the periphery of spin chuck 5 in a plan view.

[0048] The first chemical liquid and the second chemical liquid are different types of chemical liquid. The first chemical liquid is acidic, and the second chemical liquid is alkaline. Specific examples of the first chemical liquid are SPM (a mixture of sulfuric acid and hydrogen peroxide solution), phosphoric acid (a phosphoric acid aqueous solution with a concentration of, for example, 80% or more and less than 100%), and hydrofluoric acid (hydrofluoric acid). A specific example of the second chemical liquid is SC1 (a mixture of ammonia water, hydrogen peroxide solution, and water). Specific examples of the first chemical liquid are all removal liquids (etching liquids or cleaning liquids) that remove unwanted materials such as thin films and particles from the substrate W. Specific examples of the first chemical liquid are all chemical liquids whose removal ability increases with increasing temperature.

[0049] The processing liquid supply device 6 includes a rinse liquid nozzle 27 that ejects rinse liquid toward the upper surface of the substrate W, a rinse liquid pipe 28 connected to the rinse liquid nozzle 27, a rinse liquid valve 29 installed in the rinse liquid pipe 28, a rinse liquid arm 30 having the rinse liquid nozzle 27 attached to its tip, and a nozzle moving device 31 that moves the rinse liquid arm 30 to move the landing position of the rinse liquid within the upper surface of the substrate W.

[0050] When the rinse liquid valve 29 is opened, the rinse liquid supplied from the rinse liquid pipe 28 to the rinse liquid nozzle 27 is discharged downward from the rinse liquid nozzle 27. When the rinse liquid valve 29 is closed, the discharge of the rinse liquid from the rinse liquid nozzle 27 stops.

[0051] The nozzle moving device 31 moves the rinse liquid nozzle 27 to move the landing position of the rinse liquid within the upper surface of the substrate W. Furthermore, the nozzle moving device 31 moves the rinse liquid nozzle 27 between a processing position where the rinse liquid discharged from the rinse liquid nozzle 27 lands on the upper surface of the substrate W and a retracted position where the rinse liquid nozzle 27 is retracted to the periphery of the spin chuck 5.

[0052] The rinse liquid supplied to the rinse liquid nozzle 27 is pure water (deionized water). The rinse liquid supplied to the rinse liquid nozzle 27 is not limited to pure water, and may be carbonated water, electrolytic ionized water, hydrogen water, ozone water, IPA (isopropyl alcohol), or hydrochloric acid water with a diluted concentration (for example, about 10 ppm or more and 100 ppm or less).

[0053] The cup 8 is disposed outward (in a direction away from the substrate rotation axis A1) from the substrate W held by the spin chuck 5. The cup 8 surrounds the spin base 12. When a processing liquid is supplied to the substrate W while the spin chuck 5 is rotating the substrate W, the processing liquid splashes from the substrate W to the surroundings of the substrate W. When the processing liquid is supplied to the substrate W, the upper end 8a of the cup 8, which is open upward, is disposed above the spin base 12. Therefore, the processing liquid, such as a chemical liquid or a rinse liquid, discharged to the surroundings of the substrate W is received by the cup 8. The processing liquid received in the cup 8 is then sent to a recovery device or a drainage device (not shown).

[0054] The heating device 7 includes an infrared heater 32 arranged above the substrate W held on the spin chuck 5, a heater arm 35 having the infrared heater 32 attached to its tip, and a heater moving device 36 that moves the heater arm 35.

[0055] The infrared heater 32 includes an infrared lamp 33 that emits light including infrared rays, and a lamp housing 34 that houses the infrared lamp 33. The infrared lamp 33 is disposed within the lamp housing 34. The lamp housing 34 is smaller than the substrate W in a planar view. Therefore, the infrared heater 32 is smaller than the substrate W in a planar view. The infrared lamp 33 and the lamp housing 34 are attached to a heater arm 35. Therefore, the infrared lamp 33 and the lamp housing 34 move together with the heater arm 35.

[0056] The infrared lamp 33 is a halogen lamp. The infrared lamp 33 includes a filament and a quartz tube that houses the filament. The infrared lamp 33 may be a carbon heater, or may be a heating element other than a halogen lamp or a carbon heater. At least a portion of the lamp housing 34 is formed of a light-transmitting and heat-resistant material such as quartz. Therefore, when the infrared lamp 33 emits light, the light from the infrared lamp 33 passes through the lamp housing 34 and is emitted from the outer surface of the lamp housing 34.

[0057] The lamp housing 34 has a bottom wall that is parallel to the upper surface of the substrate W. The infrared lamps 33 are disposed above the bottom wall. The lower surface of the bottom wall includes a flat irradiation surface that is parallel to the upper surface of the substrate W. When the infrared heater 32 is disposed above the substrate W, the irradiation surface of the lamp housing 34 faces the upper surface of the substrate W in the vertical direction with a gap therebetween. When the infrared lamps 33 emit light in this state, the light that includes infrared rays is directed from the irradiation surface of the lamp housing 34 toward the upper surface of the substrate W and is irradiated onto the upper surface of the substrate W.

[0058] The irradiation surface is, for example, a circle whose diameter is smaller than the radius of the substrate W. The irradiation surface is not limited to a circle, and may be a rectangle whose longitudinal length is equal to or greater than the radius of the substrate W, or may be a shape other than a circle or a rectangle.

[0059] The heater moving device 36 holds the infrared heater 32 at a predetermined height. The heater moving device 36 moves the infrared heater 32 horizontally by rotating the heater arm 35 about a heater rotation axis A3 that extends vertically around the spin chuck 5. This causes the irradiation position (a part of the upper surface of the substrate W) where the infrared rays are irradiated to move within the upper surface of the substrate W. The heater moving device 36 moves the infrared heater 32 horizontally along an arc-shaped trajectory that passes through the center of the substrate W in a plan view. Therefore, the infrared heater 32 moves within a horizontal plane that includes the area above the spin chuck 5. The heater moving device 36 also moves the infrared heater 32 vertically to change the distance between the irradiation surface and the substrate W.

[0060] Light from the infrared heater 32 is irradiated onto an irradiation position on the upper surface of the substrate W. While the infrared heater 32 is emitting infrared light, the control unit 90 rotates the substrate W using the spin chuck 5 and causes the heater moving device 36 to rotate the infrared heater 32 about the heater rotation axis A3. This causes the upper surface of the substrate W to be scanned by the irradiation position as a heating position. Therefore, light containing infrared light is absorbed by the upper surface of the substrate W, and radiant heat is transferred from the infrared lamps 33 to the substrate W. Therefore, when the infrared lamps 33 emit infrared light while a liquid such as a processing liquid is held on the substrate W, the temperatures of the substrate W and the processing liquid rise.

[0061] 4 is a cross-sectional view showing an example of the configuration of the chuck pin 13. As shown in the example in Fig. 4, the chuck pin 13 has a gripping portion 13A that is pressed against the peripheral edge surface of the substrate W when in the closed position. When the chuck pin 13 rotates about the pin rotation axis (an axis parallel to the substrate rotation axis A1) between the closed positions, the gripping portion 13A moves horizontally. On the other hand, when the chuck pin 13 is disposed in the closed position, the gripping portion 13A is pressed against the peripheral edge portion of the substrate W.

[0062] The control unit 90 switches the state of the plurality of chuck pins 13 between a closed state in which the plurality of chuck pins 13 grip the substrate W and an open state in which the grip of the substrate W by the plurality of chuck pins 13 is released.

[0063] <Operation of the substrate processing apparatus> FIG. 5 is a flowchart showing an example of substrate processing in the processing unit 600.

[0064] In the following, an example of processing a silicon substrate will be described, however, the substrate W is not limited to a silicon substrate and may be, for example, a silicon carbide substrate, a sapphire substrate, a gallium nitride substrate, or a gallium arsenide substrate.

[0065] First, the substrate W is loaded into the chamber 180 (step ST1 in FIG. 5). Specifically, the control unit 90 causes the hand of the center robot 603 holding the substrate W to enter the chamber 180 while all nozzles are retracted from above the spin chuck 5. Then, the control unit 90 causes the center robot 603 to place the substrate W on the plurality of chuck pins 13. Thereafter, the control unit 90 causes the hand of the center robot 603 to retract from the chamber 180. After the substrate W is placed on the plurality of chuck pins 13, the control unit 90 moves each of the chuck pins 13 from the open position to the closed position. Thereafter, the control unit 90 causes the spin motor 16 to start rotating the substrate W.

[0066] Next, SPM, an example of a first chemical liquid, is supplied to the substrate W (step ST2 in FIG. 5). Specifically, the control unit 90 controls the nozzle moving device 21 to move the chemical liquid nozzle 17 from the retracted position to the processing position. As a result, the chemical liquid nozzle 17 is positioned above the substrate W. Thereafter, the control unit 90 opens the chemical liquid valve 19 to cause the chemical liquid nozzle 17 to discharge SPM at a temperature higher than room temperature (for example, 140° C.) toward the upper surface of the rotating substrate W. In this state, the control unit 90 controls the nozzle moving device 21 to move the landing position of the SPM on the upper surface of the substrate W between the center and the peripheral edge.

[0067] The SPM discharged from the chemical nozzle 17 lands on the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W due to centrifugal force. Therefore, the SPM is supplied to the entire upper surface of the substrate W, and a liquid film of SPM covering the entire upper surface of the substrate W is formed on the substrate W. As a result, foreign matter (residues) on the substrate W, such as a resist film, reacts with the SPM and is removed from the substrate W.

[0068] Next, with the supply of SPM to the substrate W stopped, a liquid film of SPM is retained on the substrate W (step ST3 in FIG. 5). Specifically, the control unit 90 controls the spin chuck 5 to reduce the rotation speed of the substrate W to a low rotation speed (for example, 1 rpm or more and 30 rpm or less) that is lower than the rotation speed of the substrate W in the step in which the first chemical liquid was supplied, with the entire upper surface of the substrate W covered with a liquid film of SPM. As a result, with the supply of SPM to the substrate W stopped, a liquid film of SPM covering the entire upper surface of the substrate W is retained on the substrate W. After stopping the supply of SPM to the substrate W, the control unit 90 controls the nozzle moving device 21 to retract the chemical liquid nozzle 17 from above the spin chuck 5.

[0069] Next, while the liquid film is being maintained, the substrate W and the SPM on the substrate W are heated (step ST4 in FIG. 5). Specifically, the control unit 90 starts emitting light from the infrared heater 32. As a result, the temperature (heating temperature) of the infrared heater 32 rises to a temperature (for example, 160°C or higher and 260°C or lower) higher than the boiling point of the first chemical liquid (SPM in this processing example) and is maintained at that temperature. Thereafter, the control unit 90 controls the heater moving device 36 to move the infrared heater 32 from the retracted position to the processing position. After the infrared heater 32 is positioned above the substrate W, the control unit 90 controls the heater moving device 36 to horizontally move the infrared heater 32 so that the irradiation position of the infrared rays on the upper surface of the substrate W moves from one of the central portion and the peripheral portion to the other. After the infrared heater 32 has heated the substrate W for a predetermined time, the control unit 90 controls the infrared heater 32 to retract from above the substrate W.

[0070] In this way, the control unit 90 moves the infrared irradiation position on the upper surface of the substrate W from one of the central portion and the peripheral portion to the other while rotating the substrate W, so that the substrate W is heated uniformly. Therefore, the SPM liquid film covering the entire upper surface of the substrate W is also heated uniformly. The heating temperature of the substrate W by the infrared heater 32 is set to a temperature equal to or higher than the boiling point of the SPM at that concentration. Therefore, the SPM on the substrate W is heated to at least the boiling point at that concentration.

[0071] Next, the SPMs on the substrate W are discharged (step ST5 in FIG. 5). Specifically, the control unit 90 controls the spin chuck 5 to rotate the substrate W at a rotation speed faster than the rotation speed of the substrate W in the puddle step, while the supply of liquid to the substrate W is stopped. As a result, a centrifugal force greater than that in the puddle step is applied to the SPMs on the substrate W, and the SPMs on the substrate W are thrown off to the periphery of the substrate W.

[0072] Next, pure water, which is an example of a rinse liquid, is supplied to the substrate W (step ST6 in FIG. 5). Specifically, the control unit 90 controls the nozzle moving device 31 to move the rinse liquid nozzle 27 from the retracted position to the processing position. After the rinse liquid nozzle 27 is positioned above the substrate W, the control unit 90 opens the rinse liquid valve 29 to cause the rinse liquid nozzle 27 to discharge pure water toward the upper surface of the rotating substrate W. As a result, a liquid film of pure water is formed that covers the entire upper surface of the substrate W, and SPM remaining on the substrate W is washed away by the pure water.

[0073] Next, SC1, an example of the second chemical liquid, is supplied to the substrate W (step ST7 in FIG. 5). Specifically, the control unit 90 controls the nozzle moving device 26 to move the chemical liquid nozzle 22 from the retracted position to the processing position. After the chemical liquid nozzle 22 is positioned above the substrate W, the control unit 90 opens the chemical liquid valve 24 to cause the chemical liquid nozzle 22 to discharge SC1 toward the upper surface of the rotating substrate W. In this state, the control unit 90 controls the nozzle moving device 26 to move the landing position of SC1 on the upper surface of the substrate W between the center and the periphery. Then, when a predetermined time has elapsed since the chemical liquid valve 24 was opened, the control unit 90 closes the chemical liquid valve 24 to stop the discharge of SC1. Thereafter, the control unit 90 controls the nozzle moving device 26 to retract the chemical liquid nozzle 22 from above the substrate W.

[0074] After landing on the upper surface of the substrate W, the SC1 discharged from the chemical liquid nozzle 22 flows outward along the upper surface of the substrate W due to centrifugal force. Therefore, the pure water on the substrate W is pushed outward by the SC1 and discharged around the substrate W. As a result, the liquid film of pure water on the substrate W is replaced with a liquid film of SC1 that covers the entire upper surface of the substrate W. Furthermore, the control unit 90 moves the landing position of the SC1 with respect to the upper surface of the substrate W between the center and the peripheral edge while the substrate W is rotating, so that the landing position of the SC1 passes over the entire upper surface of the substrate W and scans the entire upper surface of the substrate W. Therefore, the SC1 discharged from the chemical liquid nozzle 22 is sprayed directly onto the entire upper surface of the substrate W, and the entire upper surface of the substrate W is uniformly processed.

[0075] Next, pure water, an example of a rinse liquid, is supplied to the substrate W (step ST8 in FIG. 5). Specifically, the control unit 90 controls the nozzle moving device 31 to move the rinse liquid nozzle 27 from the retracted position to the processing position. After the rinse liquid nozzle 27 is positioned above the substrate W, the control unit 90 opens the rinse liquid valve 29 to cause the rinse liquid nozzle 27 to discharge pure water toward the upper surface of the rotating substrate W. As a result, the SC1 on the substrate W is swept outward by the pure water and discharged around the substrate W. Therefore, the liquid film of SC1 on the substrate W is replaced with a liquid film of pure water that covers the entire upper surface of the substrate W. Then, when a predetermined time has elapsed since the rinse liquid valve 29 was opened, the control unit 90 closes the rinse liquid valve 29 to stop the discharge of pure water. Thereafter, the control unit 90 controls the nozzle moving device 31 to retract the rinse liquid nozzle 27 from above the substrate W.

[0076] Next, the substrate W is dried (step ST9 in FIG. 5). Specifically, the control unit 90 accelerates the rotation of the substrate W by the spin chuck 5, rotating the substrate W at a high rotation speed (for example, several thousand rpm) that is higher than the rotation speed up to the above steps. As a result, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is thrown off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried. Then, when a predetermined time has elapsed since the high-speed rotation of the substrate W began, the control unit 90 controls the spin motor 16 to stop the rotation of the substrate W by the spin chuck 5.

[0077] Next, the substrate W is unloaded from the chamber 180 (step ST10 in FIG. 5). Specifically, the control unit 90 moves each chuck pin 13 from the closed position to the open position, thereby releasing the substrate from the spin chuck 5. Thereafter, the control unit 90 causes the hand of the center robot 603 to enter the chamber 180 while all nozzles are retracted from above the spin chuck 5. Then, the control unit 90 causes the hand of the center robot 603 to hold the substrate on the spin chuck 5. Thereafter, the control unit 90 causes the hand of the center robot 603 to retract from the chamber 180. This allows the processed substrate to be unloaded from the chamber 180.

[0078] <About the composition of molded products> Next, the configuration of the molded article used as at least a part of the constituent members of the substrate processing apparatus 1 will be described.

[0079] The molded product used in the substrate processing apparatus 1 according to this embodiment is a polytetrafluoroethylene (commonly known as "PTFE," and this common name will be used hereinafter) resin blended with a carbon material (PTFE mixed with a carbon material), and is irradiated with an electron beam. PTFE is a thermoplastic resin, similar to PFA. PTFE also has chemical resistance, insulating properties, and low friction. PTFE can be molded not only by cutting but also by molding, which helps keep manufacturing costs down. Carbon black is an example of a carbon material. PTFE blended with carbon black is black.

[0080] The above molded product can be applied to any configuration in the substrate processing apparatus 1 (for example, the chuck pin 13 shown in FIG. 4), but because it is a highly wear-resistant component, it is particularly desirable to apply it to components that are subject to repeated deformation or separation, such as bellows components, diaphragms and valve seats of valve components.

[0081] When applied to the configuration of the substrate processing apparatus 1, the coating material may be applied to the member itself or may be applied as a coating layer on the member.

[0082] <About the manufacturing method of molded products> Next, a method for manufacturing the molded article will be described. Fig. 6 is a flowchart illustrating the manufacturing process of the molded article according to the present disclosure. Here, a case where PTFE blended with a carbon material is used as the coating layer of the molded article is illustrated. The manufacturing process includes steps S1 and S2.

[0083] First, a layer of uncrosslinked PTFE (hereinafter abbreviated as "PTFE layer") containing a carbon material is formed on a substrate (not shown) (step S1). To form a layer of a fluororesin (hereinafter abbreviated as "fluororesin layer") such as PTFE on a substrate, a method is usually used in which a fluororesin dispersion is applied to the substrate by a dipping method, a spin coating method, a spray coating method, or the like, and then dried.

[0084] Alternatively, a fluororesin layer can be formed on a substrate by coating a fluororesin powder coating on the substrate. Examples of methods for coating powder coating include electrostatic coating and fluidized bed coating. In terms of the ease of forming a uniform, thin coating film, it is preferable to use a fluororesin dispersion coating method.

[0085] Next, the temperature-adjusted PTFE layer is irradiated with an electron beam in an atmosphere with an oxygen concentration of less than 10 ppm (step S2). The temperature of the PTFE layer before irradiation with the electron beam is, for example, 320°C, which is approximately the same as the melting point of PTFE, 327°C. The electron beam irradiation dose is 50 kGy or more and 500 kGy or less, for example, 300 kGy. The effective acceleration voltage of the electron beam is, for example, 80 KeV. This irradiation crosslinks the uncrosslinked PTFE. Note that the electron beam irradiation may be performed only on a portion of the molded product.

[0086] Examples of radiation that can be used include particle rays such as α-rays (particle rays of helium-4 nuclei emitted from radioactive nuclei undergoing α-decay), β-rays (negative electrons and positrons emitted from atomic nuclei), and electron beams (electron beams with almost constant kinetic energy generated by, for example, accelerating thermal electrons in a vacuum), and ionizing radiation such as γ-rays (short-wavelength electromagnetic waves emitted or absorbed by transitions between energy levels of atomic nuclei or elementary particles, or by pair annihilation, pair creation, etc. of elementary particles). However, from the viewpoint of crosslinking efficiency or operability, electron beams and γ-rays are preferred, and electron beams are used in this embodiment.

[0087] The radiation exposure dose is, for example, 50 kGy or more and 800 kGy or less. From the viewpoint of improving chemical resistance, the exposure dose is, for example, 100 kGy or more and 400 kGy or less. From the viewpoint of further improving chemical resistance, the exposure dose is, for example, 200 kGy or more and 400 kGy or less. The above-mentioned 300 kGy is 200 kGy or more and 400 kGy or less.

[0088] The atmosphere in the radiation irradiation region has an oxygen concentration of, for example, 1000 ppm or less. From the viewpoint of facilitating the progress of the crosslinking reaction, the oxygen concentration is, for example, 800 ppm or less. From the viewpoint of further facilitating the progress of the crosslinking reaction, the oxygen concentration is, for example, 500 ppm or less. From the viewpoint of further facilitating the progress of the crosslinking reaction, the oxygen concentration is, for example, 300 ppm or less. The above-mentioned "less than 10 ppm" means 300 ppm or less. The lower limit of the oxygen concentration is usually 0.1 ppm, and in many cases is about 1 ppm.

[0089] The structure obtained by crosslinking improves the durability (bending strength, suppression of deterioration in electrical conductivity, and even wear resistance) of PTFE blended with carbon materials. This improvement in durability is thought to be due to the following reasons: (i) The above-mentioned electron beam irradiation breaks the C—F bonds in PTFE to generate carbon radicals; (ii) The above-mentioned electron beam irradiation also generates radicals in the functional groups of the carbon material; (iii) Bonds are generated between adjacent radicals (including a combination of a carbon radical originating from PTFE and a radical originating from the carbon material), forming crosslinks between the PTFE and the carbon material.

[0090] Table 1 shows examples of the bending strength and volume resistivity of PTFE blended with carbon materials before and after electron beam irradiation. For example, the concentration of functional groups (COOH, OH, CO) in carbon black, which serves as a carbon material, is approximately 0.01 mmol / g or more and 1 mmol / g or less. For example, the concentration of functional groups (COOH, OH) in carbon fiber, which serves as a carbon material, is approximately 0.001 mmol / g. For example, the concentration of functional groups (COOH, OH, CO) in carbon nanotubes, which serves as a carbon material, is approximately 0.01 mmol / g or more and 0.1 mmol / g or less.

[0091] [Table 1]

[0092] Here, an example is given in which powdered carbon black is blended as the carbon material with the base resin PTFE. Blending powdered carbon black with PTFE is expected to improve the heat resistance, chemical resistance, and electrical conductivity of the resulting molded product. For example, when the molded product is used for the chuck pin 13, it is desirable for the chuck pin 13 to be electrically conductive so that the electricity that withstands the substrate W can flow smoothly to the bottom of the device.

[0093] Samples 101, 201, and 301 were all rectangular parallelepipeds with long sides of 50 mm, short sides of 20 mm, and a thickness of 2 mm. Before the immersion treatment, the amount of carbon black mixed into PTFE in Samples 101, 201, and 301 was all 3 wt%.

[0094] Sample 101 has not been irradiated with an electron beam and has not undergone a dipping treatment. Sample 201 has not been irradiated with an electron beam and has undergone a dipping treatment. Sample 301 has been irradiated with an electron beam and has undergone a dipping treatment.

[0095] The immersion treatment referred to here is the following treatment: (a) Immersion in SPM with a ratio of sulfuric acid to hydrogen peroxide of 2; (b) The temperature of the SPM during immersion was 260°C; (c) The immersion period is 28 days, during which the SPM is replaced daily.

[0096] The above (a) and (b) were set to resemble the environment in which the chuck member is placed when performing resist removal processing on a substrate using an SPM. The above (c) was set to clearly compare the presence or absence of the effects of electron beam irradiation. Note that in the above (b) environment, the use of ETFE is less favorable than PTFE due to its melting point.

[0097] The bending strength in Table 1 was measured in accordance with JIS standard K7171. The radius of the indenter used in the measurement was 5 mm, and the radius of the support was 2 mm. The distance between the supports was 32 mm. The ambient temperature during the measurement was 23°C ± 2°C, and the humidity was room humidity ± 10%. The following points can be understood from the bending strength values: (x) Comparing sample 101 and sample 201, the immersion treatment deteriorated the bending strength; (y) A comparison between Sample 201 and Sample 301 shows that the deterioration of bending strength due to immersion treatment is suppressed by electron beam irradiation.

[0098] It is presumed that crosslinks formed by the bonding of adjacent radicals (including combinations of carbon radicals originating from PTFE and radicals originating from the carbon material) contribute to improving the resistance of molded products after electron beam irradiation.

[0099] The volume resistivity in Table 1 was measured by the four-probe method in accordance with JIS standard K7194. The electrodes used in the measurement were spaced 5 mm apart and had a diameter of 2 mm. The ambient temperature during the measurement was 23°C ± 2°C, and the humidity was 50 ± 5% RH. The following points can be understood from the volume resistivity: (r) Comparing sample 101 and sample 201, the immersion treatment deteriorates the conductivity; (s) Comparing Sample 201 and Sample 301, the deterioration of conductivity due to immersion treatment is suppressed by electron beam irradiation.

[0100] The "weight change rate before and after immersion treatment" (hereinafter simply referred to as "weight change rate") in Table 1 indicates the percentage change in weight of Sample 201 and Sample 301 that were subjected to the immersion treatment from their respective weights before the immersion treatment. The negative sign of the weight change rate indicates that the weight has decreased. The following points can be understood from the weight change rate: (z) Comparing Sample 201 and Sample 301, the weight loss due to the immersion treatment is suppressed by the irradiation of the electron beam.

[0101] Visually, the appearance of Sample 201 appeared whitish compared to the appearance of Sample 301. Carbon materials are black, and PTFE is white. Considering this and the above (z), the following is inferred: (p) The immersion treatment of sample 201 makes it easier for the carbon material to be released into SPM compared to sample 301; (q) Electron beam irradiation suppresses the desorption of carbon materials into SPM.

[0102] From these findings, it is inferred that the above (y) is caused by the fact that electron beam irradiation suppresses the release of carbon material during immersion processing. Taking into account the above (r) and (s), the suppression of carbon material release contributes to the fact that conductivity is less likely to decrease even during immersion processing. In light of this contribution, PTFE blended with carbon material and irradiated with electron beams is suitable for chuck members (e.g., chuck pin 13) used in high-temperature chemical processing, such as resist removal processing using SPM at 200°C or higher.

[0103] Furthermore, based on the above speculation, it is believed that the above-mentioned improvement in resistance can be expected when carbon fiber or carbon nanotubes are used as the carbon material instead of carbon black and blended with PTFE.Similarly, it is believed that the above-mentioned improvement in resistance can be expected when PFA is used instead of PTFE.

[0104] <Effects of the above-described embodiments> Next, examples of effects obtained by the above-described embodiments will be described. Note that in the following description, the effects will be described based on the specific configurations exemplified in the above-described embodiments, but these may be replaced with other specific configurations exemplified in the present specification as long as the same effects are obtained. In other words, for convenience, only one of the corresponding specific configurations may be described as a representative below, but the representatively described specific configuration may be replaced with another corresponding specific configuration.

[0105] According to the embodiment described above, the method for molding a molded product used in the substrate processing apparatus 1 includes a step of irradiating an electron beam onto a molded product made of PTFE (polytetrafluoroethylene) blended with a carbon material.

[0106] This configuration allows for the molding of a component that is resistant to high-temperature chemical treatment, e.g., has bending elasticity and conductivity. Specifically, adjacent radicals generated by electron beam irradiation form bonds with each other, forming crosslinks between the PTFE and the carbon material. This crosslinked structure improves the durability of the PTFE blended with the carbon material. This improved durability prevents the shortening of the lifespan of molded products, such as zipper components, thereby contributing to cost reduction.

[0107] Unless otherwise specified, the order in which the processes are performed can be changed.

[0108] Furthermore, even if other configurations shown as examples in this specification are appropriately added to the above configuration, that is, even if other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be achieved.

[0109] Furthermore, according to the above-described embodiment, the carbon material contains powdered carbon black. With this configuration, electron beam irradiation generates radicals at the high concentration of functional groups in the carbon black. These radicals then bond with carbon radicals originating from PTFE, forming a crosslinked structure that effectively improves the durability of the PTFE blended with the carbon material and maintains its conductivity.

[0110] Furthermore, according to the embodiment described above, the molded product is the chuck pin 13 that holds the substrate W in the substrate processing apparatus 1. According to this configuration, by molding a member that is exposed to a high-temperature processing liquid, such as the chuck pin 13, from PTFE blended with a carbon material, the member exhibits resistance even when subjected to high-temperature chemical processing, and electrical conductivity is obtained.

[0111] According to the embodiment described above, the molded article is irradiated with electron beams in a state where the carbon material is mixed with polytetrafluoroethylene.

[0112] With this configuration, it is possible to form a member that is resistant to high-temperature chemical treatment, for example, that has bending elasticity and electrical conductivity.

[0113] Furthermore, even if other configurations shown as examples in this specification are appropriately added to the above configuration, that is, even if other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be achieved.

[0114] <Modifications of the above-described embodiments> In the embodiments described above, the material, composition, dimensions, shape, relative positional relationship, or implementation conditions of each component may also be described, but these are merely examples in all aspects and are not limiting.

[0115] Thus, numerous variations and equivalents not shown are contemplated within the scope of the technology disclosed herein, including, for example, the modification, addition, or omission of at least one component.

[0116] Furthermore, in at least one of the embodiments described above, when a material name or the like is stated without being specifically specified, unless a contradiction arises, it is assumed that the material in question includes other additives, such as alloys. [Explanation of symbols]

[0117] 1. Substrate processing equipment 13 Zipper Pin S1, S2 steps W substrate

Claims

1. A molding method for a molded product used in a substrate processing apparatus, The method includes a step of irradiating the molded article, in which a carbon material is blended with polytetrafluoroethylene or a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether, with an electron beam. Molding method.

2. The molding method according to claim 1, The carbon material includes powdered carbon black. Molding method.

3. The molding method according to claim 1 or 2, the molded article is a chuck pin that holds a substrate in the substrate processing apparatus; Molding method.

4. It is a molded product used in substrate processing equipment. A carbon material is blended into polytetrafluoroethylene or a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether, and the resulting mixture is irradiated with an electron beam. Molded products.

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