Processing device, processing method, and manufacturing method of display device

Abstract

To provide a technique advantageous in reducing a footprint of a processing device for processing a substrate.SOLUTION: A processing device for processing a substrate includes a heat treatment chamber for heat-treating the substrate, a preheating chamber connected to the heat treatment chamber, a supply part for supplying a heated gas to an internal space of the preheating chamber, and a suction part for suctioning the gas from the internal space. The substrate is carried into the heat treatment chamber through the internal space of the preheating chamber and carried out of the heat treatment chamber through the internal space of the preheating chamber. A dimension of the internal space in a transport direction of the substrate is smaller than a dimension of the substrate in the transport direction.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a processing device, a processing method, and a method for manufacturing a display device. [Background technology]

[0002] Patent Document 1 describes a heating and drying apparatus including a heating furnace with multiple shelves and multiple load lock chambers arranged to correspond to the multiple shelves of the heating furnace. The heating furnace has a substrate rack with multiple shelves, and the load lock chamber has a capacity large enough to accommodate one substrate and a transfer arm. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-65967 Summary of the Invention [Problem to be solved by the invention]

[0004] The load lock chamber described in Patent Document 1 has a volume large enough to accommodate one substrate and a transfer arm, and therefore requires a footprint similar to that of a heating furnace.

[0005] An object of the present invention is to provide a technique that is advantageous in reducing the footprint of a processing apparatus for processing substrates. [Means for solving the problem]

[0006] One aspect of the present invention relates to a processing apparatus for processing a substrate, the processing apparatus comprising: a heat treatment chamber for heat-treating the substrate; a preheating chamber connected to the heat treatment chamber; a supply unit for supplying heated gas to an internal space of the preheating chamber; and a suction unit for suctioning gas from the internal space, wherein the substrate is transported into the heat treatment chamber through the internal space of the preheating chamber and is transported out of the heat treatment chamber through the internal space of the preheating chamber, and the dimension of the internal space in the transport direction of the substrate is smaller than the dimension of the substrate in the transport direction. [Effects of the Invention]

[0007] According to the present invention, a technique is provided that is advantageous for reducing the footprint of a processing apparatus for processing a substrate. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram schematically illustrating the configuration of a processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a diagram schematically showing the transfer of a substrate in the processing apparatus of the first embodiment. [Figure 3] FIG. 10 is a diagram schematically illustrating the configuration of a processing apparatus according to a second embodiment. [Figure 4] FIG. 10 is a diagram schematically illustrating the configuration of a preheating chamber in a processing apparatus according to a second embodiment. [Figure 5] FIG. 10 is a diagram schematically illustrating the configuration of a modified example of the processing apparatus of the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe multiple features, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate identical or similar components, and redundant description will be omitted. In the embodiments and drawings described below, directions are indicated by an XYZ coordinate system. In the XYZ coordinate system, the XY plane is horizontal, and the Z axis direction is vertical.

[0010] FIG. 1 is a diagram schematically illustrating the configuration of a processing apparatus PA according to the first embodiment. FIG. 2 is a diagram schematically illustrating transportation of a substrate S in the processing apparatus PA according to the first embodiment. The processing apparatus PA can be configured to heat-treat a substrate S. The substrate S can have a support member (alternatively, a support substrate) SM and at least one film F disposed on the support member SM. Heat-treating the substrate S can include heat-treating the film F. Heat-treating the substrate S can include, for example, at least one of a drying process for drying the film F and a baking process for baking the film F. The drying process volatilizes a solvent contained in the film F to reduce the concentration of the solvent. The baking process changes the properties of the film F, for example, changing the crystalline structure of the film F.

[0011] The film F may be, for example, a film composed of a solution containing a solute and a solvent for forming an organic film (hereinafter referred to as a solution film). The organic film may be, for example, any of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer of an organic EL (OLED) element. The production of an organic EL element may include a process of forming each organic film, such as the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer, on a support member SM. The process of forming each organic film on the support member SM may include a coating process of disposing or coating a solution film on the support member SM by a printing method or the like, and a heat treatment process of heat-treating the solution film. The heat treatment process may include at least one of a drying process and a baking process. The drying process may be performed in a reduced pressure environment. Furthermore, a non-heating drying process may be performed in a reduced pressure environment before the heat treatment process.

[0012] The processing apparatus PA may include a heat treatment chamber 10 for heat-treating the substrate S and a preheating chamber 20 connected to the heat treatment chamber 10. The heat treatment chamber 10 defines a first internal space SP1, and the preheating chamber 20 defines a second internal space SP2. The ordinal numbers "first" and "second" are merely terms for distinguishing the internal spaces from one another. The processing apparatus PA may include a supply unit 23 (first supply unit) and a supply unit 25 (second supply unit) that supply heated gas to the second internal space SP2 of the preheating chamber 20, and a suction unit 22 (first suction unit) and a suction unit 24 (second suction unit) that suction gas from the second internal space SP2 of the preheating chamber 20. The gas supplied to the second internal space SP2 by the supply units 23 and 25 may be, for example, an inert gas. Although an example in which there are multiple supply units will be described in this embodiment, there may be only one supply unit. Furthermore, although an example in which there are multiple suction units will be described in this embodiment, there may be only one suction unit.

[0013] The substrate S can be transported by a transport mechanism 40. The transport mechanism 40 may or may not be a component of the processing apparatus PA. The substrate S can be transported by the transport mechanism 40 into (the first internal space SP1 of) the heat treatment chamber 10 through the second internal space SP2 of the preheating chamber 20. The substrate S can also be transported by the transport mechanism 40 from (the first internal space SP1 of) the heat treatment chamber 10 through the second internal space SP2 of the preheating chamber 20. The dimension W of the second internal space SP2 of the preheating chamber 20 in the transport direction CD (Y direction in Figures 1 and 2) of the substrate S by the transport mechanism 40 is smaller than the dimension L of the substrate S in the transport direction CD.

[0014] The first internal space SP1 of the heat treatment chamber 10 and the second internal space SP2 of the preheating chamber 20 are connected through a first opening OP1. The second internal space SP2 of the preheating chamber 20 and the external space SP3 are connected through a second opening OP2. The processing apparatus PA may further include a first valve 31 disposed between the heat treatment chamber 10 (the first internal space SP1) and the preheating chamber 20 (the second internal space SP2), and a second valve 32 disposed between the preheating chamber 20 (the second internal space SP2) and the external space SP3. The first valve 31 and the second valve 32 are provided on a transport path of the substrate S by the transport mechanism 40, which is a linear path. The external space SP3 may be the internal space of a chamber (not shown). The transport mechanism 40 transports the substrate S into (the first internal space SP1 of) the heat treatment chamber 10 and the transport mechanism 40 transports the substrate S out of (the first internal space SP1 of) the heat treatment chamber 10 with both the first valve 31 and the second valve 32 open.

[0015] When the loading of the substrate S into (the first internal space SP1 of) the heat treatment chamber 10 is completed, the first valve 31 and the second valve 32 can be closed. Alternatively, when loading the substrate S into (the first internal space SP1 of) the heat treatment chamber 10, the second valve 32 can be closed when (the rear end of) the substrate S passes through the second opening OP2, and the first valve 31 can be closed when (the rear end of) the substrate S passes through the first opening OP1. When unloading the substrate S from (the first internal space SP1 of) the heat treatment chamber 10, the first valve 31 and the second valve 32 can be opened in advance, and the transport hand 42 of the transport mechanism 40 can be inserted into (the first internal space SP1 of) the heat treatment chamber 10. Thereafter, when the substrate S held by the transport hand 42 is transported out of the heat treatment chamber 10 (the first internal space SP1 thereof), the first valve 31 may be closed when the substrate S passes through the first opening OP1, and the second valve 32 may be closed when the substrate S passes through the second opening OP2. Note that the first valve 31 and the second valve 32 are not essential components. However, by providing these valves, the amount of gas (e.g., air) moving between the first internal space SP1 and the external space SP3 of the heat treatment chamber 10 through the first opening OP1 and the second opening OP2 during transport of the substrate S may be reduced.

[0016] The dimension W of the second internal space SP2 of the preheating chamber 20 in the transport direction CD of the substrate S by the transport mechanism 40 is preferably 50 mm or more and smaller than half the dimension L of the substrate S in the transport direction CD. If the dimension W of the second internal space SP2 is less than 50 mm, gas (e.g., air) may move between the first internal space SP1 and the external space SP3 of the heat treatment chamber 10 through the first opening OP1 and the second opening OP2 during transport of the substrate S. This may decrease the temperature of the first internal space SP1 of the heat treatment chamber 10 and increase the temperature of the external space SP3. If the dimension W of the second internal space SP2 is half or more of the dimension L of the substrate S, the transport stroke of the transport mechanism 40 must be lengthened, which may complicate the structure of the transport mechanism 40. Furthermore, if the dimension W of the second internal space SP2 is half or more of the dimension L of the substrate S, the footprint of the processing device PA may increase.

[0017] The heat treatment chamber 10 may include a substrate holder 14 that holds a substrate S in the first internal space SP1. The substrate holder 14 may be supported, for example, by a base 12 disposed in the first internal space SP1. The heat treatment chamber 10 may also include a heater 13 that heats a film F on the substrate S so that the film F is thermally treated (e.g., baked). The heat treatment of the substrate S (film F) may be performed with the first valve 31 and the second valve 32 closed. The temperature of the heat treatment may be maintained at a constant value or may be changed according to a target temperature curve. During the heat treatment of the substrate S, the temperature of the second internal space SP2 of the preheating chamber 20 may be adjusted to a temperature corresponding to the temperature of the first internal space SP2 of the heat treatment chamber 10 at the start of the heat treatment using the supply units 23, 25 and the suction units 22, 24. The heat treatment chamber 10 may include a gas inlet unit that introduces a gas (e.g., an inert gas) for the heat treatment into the first internal space.

[0018] The processing apparatus PA may further include a control unit 50 that controls the heater 13, the supply units 23 and 25, the suction units 22 and 24, the first valve 31, and the second valve 32. The control unit 50 may further be configured to control the transport mechanism 40. The control unit 50 may be configured, for example, by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), an ASIC (abbreviation for Application Specific Integrated Circuit), a general-purpose or dedicated computer with an embedded program, or a combination of all or part of these.

[0019] The control unit 50 may be configured to control a processing method for processing the substrate S in the processing device PA. The processing method may include a loading step, a heat treatment step, and an unloading step. In the loading step, the substrate S is loaded into (the first internal space SP1 of) the heat treatment chamber 10 through the second internal space SP2 of the preheating chamber 20 by the transport mechanism 40. In the heat treatment step, the substrate S is heat-treated in the heat treatment chamber 10. In the unloading step, the transport mechanism 40 unloads the substrate S from (the first internal space SP1 of) the heat treatment chamber 10 through the second internal space SP2 of the preheating chamber 20. In the loading step, the control unit 50 may control the first valve 31 and the second valve 32 so that the second valve 32 is closed when the substrate S passes through the second opening OP2, and the first valve 31 is closed when the substrate S passes through the first opening OP1. In the unloading step, the control unit 50 may open the first valve 31 and the second valve 32 and insert the transfer hand 42 of the transfer mechanism 40 into (the first internal space SP1 of) the heat treatment chamber 10. Thereafter, the control unit 50 may control the first valve 31 and the second valve 32 so that the first valve 31 is closed when the substrate S held by the transfer hand 42 passes through the first opening OP1, and the second valve 32 is closed when the substrate S passes through the second opening OP2.

[0020] The supply units 23 and 25 are disposed between the region where the suction units 22 and 24 are disposed and the heat treatment chamber 10. Alternatively, the suction units 22 and 24 are disposed between the region where the supply units 23 and 25 are disposed and the heat treatment chamber 10. Such a configuration is advantageous for reducing temperature fluctuations in the second internal space SP2. Here, each of the supply units 23 and 25 may include, for example, multiple nozzles arranged along the X direction, or may have a supply nozzle extending in a line in the X direction. Furthermore, each of the supply units 23 and 25 may include, for example, multiple nozzles arranged along the Y direction, or may have nozzles extending in a line in the Y direction. Furthermore, each of the supply units 23 and 25 may include, for example, multiple nozzles arranged along the Z direction, or may have nozzles extending in a line in the Z direction. Similarly, each of the suction units 22 and 24 may include, for example, multiple nozzles arranged along the X direction, or may have a suction nozzle extending in a line in the X direction. Each of the suction units 22, 24 may include, for example, a plurality of nozzles arranged along the Y direction, or may have a suction nozzle extending in a line in the Y direction. Each of the suction units 22, 24 may include, for example, a plurality of nozzles arranged along the Z direction, or may have a suction nozzle extending in a line in the Z direction.

[0021] The supply unit 23 may include a first supply port arranged above the transport path of the substrate S. The supply unit 25 may include a second supply port arranged below the transport path of the substrate S. The suction unit 22 may include a first suction port arranged above the transport path of the substrate S. The suction unit 24 may include a second suction port arranged below the transport path of the substrate S. When the substrate S is being transported by the transport mechanism 40 through the second internal space SP2 of the preheating chamber 20, the second internal space SP2 may be divided into an upper space US and a lower space LS by the substrate S.

[0022] When the substrate S is being transported through the second internal space SP2, the temperature and gas flow in the upper space US can be controlled by the supply unit 23 and the suction unit 22, and the temperature and gas flow in the lower space LS can be controlled by the supply unit 25 and the suction unit 24. The supply unit 23 and the suction unit 22 can be controlled to suppress the gas flow between the first internal space SP1 and the upper space US, and the gas flow between the upper space US and the external space SP3. Similarly, the supply unit 25 and the suction unit 24 can be controlled to suppress the gas flow between the first internal space SP1 and the lower space LS, and the gas flow between the lower space LS and the external space SP3.

[0023] The processing apparatus PA of the second embodiment will be described below with reference to Figures 3 and 4. Figures 3 and 4 are diagrams schematically showing the configuration of the processing apparatus PA of the second embodiment during transport of a substrate S. Figure 4 is a cross-sectional view of the preheating chamber 20 in the processing apparatus PA of Figure 3, cut along a plane parallel to the XZ plane. Matters not mentioned in the second embodiment may follow those of the first embodiment.

[0024] The processing device PA of the second embodiment includes at least one of a first plate 26 disposed in the upper space US of the second internal space SP2 of the preheating chamber 20 and a second plate 27 disposed in the lower space LS of the second internal space SP2. Preferably, the processing device PA includes both the first plate 26 and the second plate 27.

[0025] The first plate 26 can rectify the flow of the first gas so that the heated first gas supplied from (the first supply port of) the supply unit 23 can be sucked by (the first suction port of) the suction unit 22. The second plate 27 can rectify the flow of the second gas so that the heated second gas supplied from (the second supply port of) the supply unit 25 can be sucked by (the second suction port of) the suction unit 24. The first plate 26 and the second plate 27 can also function to prevent gas (air) in the external space SP3 from flowing into the second internal space SP2 (upper space US, lower space LS).

[0026] The first plate 26 and the second plate 27 may be heating plates that heat the substrate S. In this case, the first plate 26 and the second plate 27 may be heated by a heating element or heating medium (not shown). The control unit 50 may control the heating or temperature of the first plate 26 and the second plate 27, for example, when the substrate S is loaded and unloaded, so as to suppress a decrease in the temperature of the second internal space SP2. Alternatively, the control unit 50 may control the heating or temperature of the first plate 26 and the second plate 27 during heat treatment of the substrate S, so as to maintain the temperature of the second internal space SP2 or so that the temperature of the second internal space SP2 reaches a target temperature.

[0027] At least one of the first plate 26 and the second plate 27 may have a cross-sectional shape that corresponds to the shape and movement path of the transport hand 42. For example, at least one of the first plate 26 and the second plate 27 may have a recess, as illustrated in FIG.

[0028] Fig. 5 is a diagram schematically illustrating a modified example of the processing apparatus PA shown in Fig. 3 and Fig. 4. This modified example has heaters 28 and 29 that heat the first plate 26 and the second plate 27, respectively. Even in this configuration, the first plate 26 and the second plate 27 can function as heating plates.

[0029] An example of applying the processing device PA to a manufacturing method of a display device such as an organic light-emitting diode (OLED) display device will be described below. The manufacturing method of a display device may include, for example, a coating step of coating a substrate S with a material for forming an organic layer, and a first processing step of processing the substrate S that has undergone the coating step using the processing device PA. The manufacturing method may also include a second processing step of further processing the substrate S that has undergone the first processing step to obtain a display device including an organic light-emitting layer. The first processing step may include a loading step of loading the substrate S into a heat treatment chamber 10 through the internal space of a preheating chamber 20, a heat treatment step of heat-treating the substrate S in the heat treatment chamber 10, and an unloading step of unloading the substrate S from the heat treatment chamber 10 through the internal space of the preheating chamber 20. The heat treatment of the substrate S in the heat treatment step may include at least one of a drying step and a baking step. The coating step and the first processing step may be performed, for example, to form a plurality of lower electrodes on the substrate S and then form an organic layer on each of the plurality of lower electrodes. The coating step and the first processing step can be performed multiple times to deposit multiple organic layers. The second processing step can include, for example, forming a top electrode. The second processing step can also include forming a color filter.

[0030] This specification and the accompanying drawings include the following disclosure: (Item 1) A processing apparatus for processing a substrate, a heat treatment chamber for heat treating the substrate; a preheating chamber connected to the heat treatment chamber; a supply unit that supplies heated gas to the internal space of the preheating chamber; a suction unit that sucks gas from the internal space, the substrate is carried into the heat treatment chamber through the internal space of the preheating chamber and carried out from the heat treatment chamber through the internal space of the preheating chamber; a dimension of the internal space in a transport direction of the substrate is smaller than a dimension of the substrate in the transport direction; A processing device characterized by: (Item 2) The apparatus further includes a first valve disposed between the heat treatment chamber and the preheating chamber, and a second valve disposed between the preheating chamber and an external space, The substrate is carried into and out of the heat treatment chamber while both the first valve and the second valve are open. 2. The processing device according to item 1, (Item 3) When the substrate is carried into the heat treatment chamber through the internal space, the second valve is closed when the substrate passes through the second valve, and the first valve is closed when the substrate passes through the first valve. 3. The processing device according to item 2. (Item 4) When the substrate is unloaded from the heat treatment chamber through the internal space, the first valve is closed when the substrate passes through the first valve, and the second valve is closed when the substrate passes through the second valve. 4. The processing device according to item 2 or 3. (Item 5) The supply unit is disposed between the suction unit and the heat treatment chamber. 5. The processing device according to any one of items 1 to 4. (Item 6) The suction unit is disposed between the supply unit and the heat treatment chamber. 5. The processing device according to any one of items 1 to 4. (Item 7) the supply unit includes a first supply port disposed above a transport path of the substrate and a second supply port disposed below the transport path; The suction unit includes a first suction port disposed above the transport path and a second suction port disposed below the transport path. 7. The processing device according to any one of items 1 to 6. (Item 8) When the substrate is transported through the internal space of the preheating chamber, the internal space is divided into an upper space and a lower space by the substrate. 8. The processing device according to item 7, (Item 9) Further provided is at least one of a plate disposed in the upper space and a plate disposed in the lower space. 9. The processing device according to item 8, (Item 10) the plate is a heating plate that heats the substrate; 10. The processing device according to item 9, (Item 11) Further comprising a first plate disposed in the upper space and a second plate disposed in the lower space. 9. The processing device according to item 8, (Item 12) the first plate rectifies the flow of the heated first gas supplied from the first supply port so that the heated first gas is sucked by the first suction port; the second plate rectifies the flow of the heated second gas supplied from the second supply port so that the heated second gas is sucked by the second suction port; Item 12. The processing device according to item 11. (Item 13) the first plate and the second plate are heating plates that heat the substrate; Item 12. The processing device according to item 11. (Item 14) The dimension of the internal space in the transport direction of the substrate is 50 mm or more and is smaller than 1 / 2 of the dimension of the substrate in the transport direction. 14. The processing device according to any one of items 1 to 13. (Item 15) A processing method for processing a substrate in a processing apparatus including a heat treatment chamber for heat-treating the substrate, a preheating chamber connected to the heat treatment chamber, a supply unit for supplying heated gas to an internal space of the preheating chamber, and a suction unit for suctioning the gas from the internal space, comprising: a carrying-in step of carrying the substrate into the heat treatment chamber through the internal space of the preheating chamber; a heat treatment step of heat-treating the substrate in the heat treatment chamber; a carrying-out step of carrying out the substrate from the heat treatment chamber through the internal space of the preheating chamber, a dimension of the internal space in a transport direction of the substrate is smaller than a dimension of the substrate in the transport direction; A processing method characterized by: (Item 16) a coating step of coating a material for forming an organic layer on a substrate; a first processing step of processing the substrate that has undergone the coating step using the processing device according to any one of items 1 to 14; a second processing step of further processing the substrate that has been subjected to the first processing step to obtain a display device including an organic light-emitting layer; A method for manufacturing a display device, comprising: (Item 17) a coating step of coating a material for forming an organic layer on a substrate; a first processing step of processing the substrate that has been subjected to the coating step by the processing method according to item 15; a second processing step of further processing the substrate that has been subjected to the first processing step to obtain a display device including an organic light-emitting layer; A method for manufacturing a display device, comprising:

[0031] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0032] PA: treatment device, 10: heat treatment chamber, 20: preheating chamber, 23: 25: supply unit, 22, 24: suction unit, S: substrate, SP1: first internal space, SP2: second internal space

Claims

1. A processing apparatus for processing a substrate, a heat treatment chamber for heat treating the substrate; a preheating chamber connected to the heat treatment chamber; a supply unit that supplies heated gas to the internal space of the preheating chamber; a suction unit that sucks gas from the internal space, the substrate is carried into the heat treatment chamber through the internal space of the preheating chamber and carried out from the heat treatment chamber through the internal space of the preheating chamber; a dimension of the internal space in a transport direction of the substrate is smaller than a dimension of the substrate in the transport direction; A processing device characterized by:

2. The apparatus further includes a first valve disposed between the heat treatment chamber and the preheating chamber, and a second valve disposed between the preheating chamber and an external space, The substrate is carried into and out of the heat treatment chamber while both the first valve and the second valve are open.

2. The processing device according to claim 1.

3. When the substrate is carried into the heat treatment chamber through the internal space, the second valve is closed when the substrate passes through the second valve, and the first valve is closed when the substrate passes through the first valve.

3. The processing device according to claim 2.

4. When the substrate is unloaded from the heat treatment chamber through the internal space, the first valve is closed when the substrate passes through the first valve, and the second valve is closed when the substrate passes through the second valve.

3. The processing device according to claim 2.

5. The supply unit is disposed between the suction unit and the heat treatment chamber.

2. The processing device according to claim 1.

6. The suction unit is disposed between the supply unit and the heat treatment chamber.

2. The processing device according to claim 1.

7. the supply unit includes a first supply port disposed above a transport path of the substrate and a second supply port disposed below the transport path; the suction unit includes a first suction port disposed above the transport path and a second suction port disposed below the transport path.

2. The processing device according to claim 1.

8. When the substrate is transported through the internal space of the preheating chamber, the internal space is divided into an upper space and a lower space by the substrate. The processing device according to claim 7 .

9. Further provided is at least one of a plate disposed in the upper space and a plate disposed in the lower space.

9. The processing device according to claim 8.

10. the plate is a heating plate that heats the substrate; The processing device according to claim 9 .

11. Further included is a first plate disposed in the upper space and a second plate disposed in the lower space.

9. The processing device according to claim 8.

12. the first plate rectifies the flow of the heated first gas supplied from the first supply port so that the heated first gas is sucked by the first suction port; the second plate rectifies the flow of the heated second gas supplied from the second supply port so that the heated second gas is sucked by the second suction port; The processing device according to claim 11 .

13. the first plate and the second plate are heating plates that heat the substrate; The processing device according to claim 11 .

14. the dimension of the internal space in the transport direction of the substrate is 50 mm or more and is smaller than half the dimension of the substrate in the transport direction; 14. The processing apparatus according to claim 1,

15. A processing method for processing a substrate in a processing apparatus including a heat treatment chamber for heat-treating the substrate, a preheating chamber connected to the heat treatment chamber, a supply unit for supplying heated gas to an internal space of the preheating chamber, and a suction unit for suctioning the gas from the internal space, comprising: a carrying-in step of carrying the substrate into the heat treatment chamber through the internal space of the preheating chamber; a heat treatment step of heat-treating the substrate in the heat treatment chamber; a carrying-out step of carrying out the substrate from the heat treatment chamber through the internal space of the preheating chamber, a dimension of the internal space in a transport direction of the substrate is smaller than a dimension of the substrate in the transport direction; A processing method characterized by:

16. a coating step of coating a material for forming an organic layer on a substrate; a first processing step of processing the substrate that has been subjected to the coating step by the processing apparatus according to any one of claims 1 to 13; a second processing step of further processing the substrate that has been subjected to the first processing step to obtain a display device including an organic light-emitting layer; A method for manufacturing a display device, comprising:

17. a coating step of coating a material for forming an organic layer on a substrate; a first processing step of processing the substrate that has been subjected to the coating step by the processing method according to claim 15; a second processing step of further processing the substrate that has been subjected to the first processing step to obtain a display device including an organic light-emitting layer; A method for manufacturing a display device, comprising:

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