Amplifier

Abstract

To provide an amplifier capable of suppressing the occurrence of areas in a resistor where power density distribution becomes extremely concentrated.SOLUTION: The amplifier according to the present disclosure includes: an input terminal; an output terminal; a pair of amplification paths provided in parallel between the input terminal and the output terminal, each having a transistor; and a resistor section connecting the pair of amplification paths. The resistor section includes: a resistor having a width at one end narrower than a width at the other end; a pair of conductor patterns provided on both sides of the resistor in a width direction and electrically connected to the resistor; and a pair of wirings connecting the one-end sides of the pair of conductor patterns to the pair of amplification paths.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to amplifiers. [Background technology]

[0002] Patent Document 1 discloses a high-frequency amplifier including an amplifying element divided into multiple regions, input matching circuits equal in number to the divisions of the amplifying element, and output matching circuits equal in number to the divisions. The high-frequency amplifier further includes a first resistor group including one or more removable resistors connecting adjacent input matching circuits, and a second resistor group including one or more removable resistors connecting adjacent output matching circuits. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-065938 Summary of the Invention [Problem to be solved by the invention]

[0004] It is known that amplifiers with multiple amplification paths can cause loop oscillation. Patent Document 1 discloses a high-frequency amplifier circuit that can suppress oscillation. However, if a rectangular stabilizing resistor with a uniform film thickness is used to suppress oscillation, the power density distribution of the stabilizing resistor is not uniform, and there is a possibility that there will be areas where power is extremely concentrated.

[0005] The present disclosure has been made to solve the above-mentioned problems, and aims to provide an amplifier that can prevent the occurrence of locations in a resistor where the power density distribution is extremely concentrated. [Means for solving the problem]

[0006] The amplifier according to the first disclosure includes an input terminal, an output terminal, a pair of amplification paths arranged in parallel between the input terminal and the output terminal, each having a transistor, and a resistance section connecting the pair of amplification paths, the resistance section including a resistor having a width narrower at one end than at the other end, a pair of conductor patterns arranged on both sides of the resistor in the width direction and electrically connected to the resistor, and a pair of wirings connecting the one ends of the pair of conductor patterns to the pair of amplification paths.

[0007] The amplifier according to the second disclosure includes an input terminal, an output terminal, a pair of amplification paths arranged in parallel between the input terminal and the output terminal, each having a transistor, and a resistance section connecting the pair of amplification paths, the resistance section including a resistor having a thicker end than one end, a pair of conductor patterns arranged on both sides of the resistor in a direction intersecting the direction from the one end to the other end and electrically connected to the resistor, and a pair of wirings connecting the one ends of the pair of conductor patterns to the pair of amplification paths.

[0008] The amplifier according to the third disclosure includes an input terminal, an output terminal, a pair of amplification paths arranged in parallel between the input terminal and the output terminal, each having a transistor, and a resistance section connecting the pair of amplification paths, the resistance section including a resistor, a pair of conductor patterns arranged on both sides of the resistor in a direction intersecting a direction from one end to the other end and electrically connected to the resistor, and a pair of wirings connecting the pair of conductor patterns and the pair of amplification paths at a center portion of the resistor in a direction from one end to the other end. [Effects of the Invention]

[0009] In the amplifier according to the first disclosure, by making the width of one end of the resistor narrower than the width of the other end, it is possible to prevent the power density distribution from being concentrated at an extreme location. In the amplifier according to the second disclosure, by making the other end of the resistor thicker than the other end, it is possible to prevent the power density distribution from being extremely concentrated at a certain point. In the amplifier according to the third disclosure, a pair of wires connects a pair of conductor patterns to a pair of amplification paths at the center of the resistor in the direction from one end to the other, thereby preventing the occurrence of locations where the power density distribution is extremely concentrated. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a plan view of an amplifier according to a first embodiment. [Figure 2] FIG. 3 is a plan view showing the power density distribution of the resistor according to the first embodiment. [Figure 3] FIG. 4 is a diagram showing a power density distribution along the center line of the resistor according to the first embodiment. [Figure 4] FIG. 10 is a plan view of an amplifier according to a comparative example. [Figure 5] FIG. 10 is a plan view showing the power density distribution of a resistor according to a comparative example. [Figure 6] FIG. 10 is a diagram showing a power density distribution along the center line of a resistor according to a comparative example. [Figure 7] FIG. 10 is a plan view of a resistor portion according to a second embodiment. [Figure 8] FIG. 10 is a plan view showing the power density distribution of a resistor according to the second embodiment. [Figure 9] FIG. 10 is a diagram showing a power density distribution along the center line of a resistor according to the second embodiment. [Figure 10] FIG. 11 is a plan view of a resistor portion according to a third embodiment. [Figure 11] 11 is a cross-sectional view of the resistor of FIG. 10 taken along line CC'. [Figure 12] FIG. 10 is a plan view showing the power density distribution of a resistor according to the third embodiment. [Figure 13] FIG. 10 is a diagram showing a power density distribution along the center line of a resistor according to the third embodiment. [Figure 14] FIG. 10 is a plan view of a resistor portion according to a fourth embodiment. [Figure 15] FIG. 10 is a plan view showing the power density distribution of a resistor according to the fourth embodiment. [Figure 16]FIG. 10 is a diagram showing a power density distribution along the center line of a resistor according to the fourth embodiment. [Figure 17] FIG. 11 is a plan view of a resistor portion according to a fifth embodiment. [Figure 18] FIG. 10 is a plan view showing the power density distribution of a resistor according to the fifth embodiment. [Figure 19] FIG. 10 is a diagram showing a power density distribution along the center line of a resistor according to the fifth embodiment. [Figure 20] FIG. 13 is a plan view of a resistor portion according to a sixth embodiment. [Figure 21] FIG. 13 is a plan view showing the power density distribution of a resistor according to the sixth embodiment. [Figure 22] FIG. 13 is a diagram showing a power density distribution along the center line of a resistor according to the sixth embodiment. [Figure 23] FIG. 13 is a plan view of a resistor portion according to a seventh embodiment. [Figure 24] 24 is a cross-sectional view obtained by cutting the resistor of FIG. 23 along line CC'. [Figure 25] FIG. 13 is a plan view showing the power density distribution of a resistor according to the seventh embodiment. [Figure 26] FIG. 13 is a diagram showing a power density distribution along the center line of a resistor according to the seventh embodiment. [Figure 27] FIG. 13 is a plan view of a resistor portion according to an eighth embodiment. [Figure 28] FIG. 13 is a plan view showing the power density distribution of a resistor according to the eighth embodiment. [Figure 29] FIG. 13 is a diagram showing a power density distribution along the center line of a resistor according to the eighth embodiment. [Figure 30] FIG. 13 is a plan view of a resistor section according to a ninth embodiment. [Figure 31] FIG. 13 is a plan view showing the power density distribution of a resistor according to the ninth embodiment. [Figure 32] FIG. 13 is a diagram showing a power density distribution along the center line of a resistor according to the ninth embodiment. [Figure 33] FIG. 23 is a plan view of a resistor portion according to a tenth embodiment. [Figure 34] FIG. 20 is a plan view showing the power density distribution of a resistor according to the tenth embodiment. [Figure 35] FIG. 20 is a diagram showing a power density distribution along the center line of a resistor according to the tenth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] The amplifiers according to the embodiments will be described with reference to the drawings. The same or corresponding components are designated by the same reference numerals, and the repeated description may be omitted.

[0012] Embodiment 1 1 is a plan view of an amplifier 100 according to a first embodiment. The amplifier 100 is an amplifier equipped with high-output internally matched transistors. The amplifier 100 includes an input terminal 1, an output terminal 7, and a pair of amplification paths 51 and 52 arranged in parallel between the input terminal 1 and the output terminal 7, each having a transistor 4. The amplifier 100 further includes a resistor unit 20 connecting the pair of amplification paths 51 and 52.

[0013] Input terminal 1 is connected to substrate 2 by a gold wire. Substrate 2 has a line formed thereon that branches the signal input from input terminal 1 into amplification paths 51 and 52. For each of amplification paths 51 and 52, substrate 3 is connected to the output of substrate 2. Transistor 4 is connected to the output of substrate 3 by wire 11. Substrate 5 is connected to the output of transistor 4 by wire 11. Substrate 6 is connected to the output of substrate 5. Substrate 6 has a line formed thereon that combines the signals from amplification paths 51 and 52 and outputs the combined signal to output terminal 7. Output terminal 7 is connected to the output of substrate 6. These components are integrated into package 10.

[0014] The transistor 4 is, for example, a HEMT (High Electron Mobility Transistor) whose main material is GaN (Gallium Nitride). The transistor 4 has, for example, a SiC (Silicon Carbide) substrate and a nitride semiconductor layer whose main material is GaN (Gallium Nitride) and is stacked on the SiC substrate by epitaxial growth. The transistor 4 may be an LDMOS (Laterally Diffused Metal-Oxide Semiconductor) applicable to microwave amplifiers. The transistor 4 may also be a transistor whose main material is GaAs (Gallium Arsenide), an HBT (Heterojunction Bipolar Transistor), or the like.

[0015] Substrates 2, 4, 5, and 6 are matching circuit substrates. Substrates 2, 4, and 6 are made of, for example, aluminum nitride, alumina, or various thin-film ceramics with a relative dielectric constant of over 30. Substrates 2, 4, and 6 may also be made of glass epoxy, Teflon, or small pieces of printed circuit boards made primarily of various low-loss organic materials.

[0016] The matching circuits formed on each of the substrates 2, 4, and 6 are, for example, distributed constant circuits formed by microstrip lines formed on the substrates. The matching circuits are not limited to microstrip lines, and a combination of distributed constant circuits and lumped constant circuits may also be used.

[0017] The package 10 is, for example, an airtight metal package. The package 10 is provided with a lid (not shown) for hermetically sealing the substrates 2, 3, 4, and 5 and the transistor 4. Note that in FIG. 1, the lid is removed to illustrate the internal structure of the amplifier 100.

[0018] Microwave power input from outside to amplifier 100 is input from input terminal 1 through substrate 2 and substrate 3 to the gate of transistor 4. Microwave power amplified by transistor 4 is output from the drain of transistor 4 through substrate 5, substrate 6 and output terminal 7 to the outside of amplifier 100. Substrate 2 acts as a microwave distribution circuit, and substrate 6 acts as a microwave combination circuit. Substrates 3 and 5 act as an impedance transformation circuit.

[0019] Fig. 2 is a plan view showing the power density distribution of resistor 22 according to the first embodiment. First, the structure of resistor section 20 will be described with reference to Fig. 2. Resistor section 20 is provided on substrate 6, which is a matching circuit board provided on the output side of transistor 4, for example. Resistor section 20 has resistor 22 whose width at one end is narrower than that at the other end. Resistor 22 is formed of, for example, a thin film of TaN (tantalum nitride) which exhibits a relatively high resistivity.

[0020] A pair of conductor patterns 24 electrically connected to the resistor 22 are provided on both sides of the resistor 22 in the width direction. Furthermore, a pair of wirings 30 connects the pair of conductor patterns 24 to the pair of amplification paths 51, 52 at one end side of the resistor 22. Specifically, the pair of wirings 30 are respectively connected to the signal lines of the pair of amplification paths 51, 52 formed on the substrate 6. The wirings 30 are, for example, wiring patterns on the substrate 6. The conductor patterns 24 and the wirings 30 are formed, for example, by laminating nichrome (NiCr) and gold (Au) in this order from the substrate 6 side.

[0021] 2 is the center line extending from one end of the resistor 22 to the other end. The direction perpendicular to the line X-X' is the width direction. Hereinafter, the line X-X' may be simply referred to as the center line. The one end side refers to the side of the resistor 22 where the width is wider, and the other end side refers to the side of the resistor 22 where the width is narrower.

[0022] For example, at least a portion of resistor 22 is tapered. This makes one end of resistor 22 narrower than the other end. In the example of Fig. 2, part of resistor 22 on the other end side is tapered.

[0023] The pair of conductor patterns 24 is provided from one end to the other end of the resistor 22. Each of the pair of conductor patterns 24 has a first portion 25 provided along one end of the resistor 22 from one end to the other, and a second portion extending from the first portion 25 at one end. In other words, the conductor patterns 24 are L-shaped. Each of the pair of wirings 30 is connected to the second portion 26. Each of the pair of conductor patterns 24 has a width at the other end wider than at the one end. As a result, the combined width of the pair of conductor patterns 24 and the resistor 22 is constant throughout.

[0024] The shape of the conductor pattern 24 in FIG. 2 is an example. For example, the conductor pattern 24 does not have to be L-shaped. The conductor pattern 24 may be a linear pattern as long as the resistance is low. For example, the width of the conductor pattern 24 may be approximately the same as the width of the resistor 24. Furthermore, the conductor pattern 24 does not have to be provided from one end to the other end of the resistor 22. The width of each of the pair of conductor patterns 24 at the other end does not have to be wider than the width at the one end. Furthermore, the combined width of the pair of conductor patterns 24 and the resistor 22 does not have to be constant overall. Furthermore, the position at which the wiring 30 is connected to the conductor pattern 24 is not limited to the end on one end of the conductor pattern 24, but may be shifted toward the center from the end on one end of the conductor pattern 24.

[0025] Next, the effects of this embodiment will be described using a comparative example. FIG. 4 is a plan view of an amplifier 100a according to the comparative example. FIG. 5 is a plan view showing the power density distribution of a resistor 22a according to the comparative example. In the comparative example, the structure of the resistor section 20a is different from that of the first embodiment. In the comparative example, the width of the resistor 22a in the resistor section 20a is constant. Furthermore, in the plan views showing the power density distribution in FIGS. 2, 5, etc., the power density distribution is indicated by different shades of color.

[0026] The amplifier 100a includes two transistors 4 and two amplification paths from the input to the output. It is known that amplifiers with multiple amplification paths can cause loop oscillation. The resistor 20a, also known as a stabilizing resistor, is provided between the amplification paths to reduce the loop gain and prevent loop oscillation.

[0027] FIG. 6 shows the power density distribution along the center line of the resistor 22a according to the comparative example. In FIG. 6, the power density consumed by the resistor 22a on the center line is shown as a relative value. In FIG. 6, the positive direction of the horizontal axis is the direction from one end of the resistor 22a to the other. When a rectangular stabilizing resistor with a uniform film thickness is used as in the comparative example, the power density distribution of the stabilizing resistor is not uniform, and there are locations where power is extremely concentrated. In this case, the resistor 22a may discolor or burn. In the example of FIG. 6, power concentration occurs on one end of the resistor 22a, i.e., the side where the wiring 30 is connected.

[0028] In contrast, in this embodiment, a resistor 22 is employed in which the width at one end is narrower than the width at the other end so that the power density distribution in the resistor portion 20 is uniform. In other words, the resistance value per unit length of the resistor 22 is set to decrease with increasing distance from the wiring 30 at the one end. FIG. 3 is a diagram showing the power density distribution along the center line of the resistor 22 according to the first embodiment. Compared to the comparative example, this embodiment suppresses changes in power density in the resistor portion 20. Furthermore, compared to the comparative example, the power density is reduced, particularly at a location at one end where power concentration is likely to occur. Therefore, it is possible to suppress the occurrence of locations in the resistor 22 where the power density distribution is extremely concentrated, and to prevent burnout or discoloration of the resistor portion 20.

[0029] Furthermore, the amplifier 100 of this embodiment can be obtained by changing only the shape of the resistor section 20 without modifying the matching circuit itself compared to the comparative example. Also, by increasing the width of the conductor pattern 24 the farther it is from the connection point with the wiring 30, power can be more easily delivered to the other end. This provides the effect of dispersing the power of the resistor section 20.

[0030] In this embodiment, loop oscillation is given as an example of oscillation. However, the oscillation is not limited to this. For example, the resistor unit 20 of this embodiment may be used as a stabilizing resistor that suppresses oscillation due to load fluctuation, half-harmonic oscillation, etc. This embodiment can be applied as long as there is a location where power is extremely concentrated in the resistor unit.

[0031] Furthermore, the resistor section 20 only needs to connect the pair of amplification paths 51, 52, and may be provided in a location other than the output-side substrate 6. For example, the resistor section 20 may be provided on the input-side substrate 2. Note that the power consumed by the resistor section 20 is greater when connected to the output side. For this reason, applying the resistor section 20 of this embodiment to the output side will provide greater benefits. Furthermore, the number of amplification paths 51, 52 provided in the amplifier 100 is not limited to two, and any number may be used.

[0032] These modifications can be applied as appropriate to the amplifiers according to the following embodiments. Note that the amplifiers according to the following embodiments have many points in common with the first embodiment, so the differences from the first embodiment will be mainly described.

[0033] Embodiment 2 FIG. 7 is a plan view of a resistor section 120 according to the second embodiment. In this embodiment, the structure of the resistor section 120 is different from that of the first embodiment. The other structures are the same as those of the first embodiment. The resistor section 120 has a resistor element 122 whose width at one end is narrower than that at the other end. Specifically, the resistor element 122 has a portion whose width narrows in a stepped manner from one end to the other end. A pair of conductor patterns 124 electrically connected to the resistor element 122 is provided on both sides of the resistor element 122 in the width direction. Furthermore, a pair of wirings 30 at one end side of the resistor element 122 connects the pair of conductor patterns 124 to the pair of amplification paths 51, 52.

[0034] FIG. 8 is a plan view showing the power density distribution of the resistor 122 according to the second embodiment. FIG. 9 is a diagram showing the power density distribution along the center line of the resistor 122 according to the second embodiment. In this embodiment as well, the resistance value per unit length of the resistor 122 is set to decrease with increasing distance from the wiring 30 on one end side. This makes it possible to suppress changes in power density in the resistance section 120, as shown in FIGS. 8 and 9. Furthermore, it is possible to reduce the power density at a location on the one end side where power concentration is particularly likely to occur. Therefore, it is possible to suppress the occurrence of locations in the resistor 122 where the power density distribution is extremely concentrated.

[0035] Embodiment 3 FIG. 10 is a plan view of a resistor section 220 according to the third embodiment. FIG. 11 is a cross-sectional view obtained by cutting the resistor 222 of FIG. 10 along the line C-C'. In this embodiment, the structure of the resistor section 220 is different from that of the first embodiment. The other structures are the same as those of the first embodiment. The resistor section 220 has a resistor 222 whose width at one end is narrower than that at the other end. In a plan view, the shape of the resistor 222 is the same as that of the resistor 22. Furthermore, the resistor 222 is thicker at the other end than at the one end. Specifically, the film thickness of the resistor 222 increases in a stepwise manner from one end to the other end.

[0036] A pair of conductor patterns 224 electrically connected to the resistor 222 are provided on both sides of the resistor 222 in the width direction. In addition, a pair of wirings 30 connects the pair of conductor patterns 224 and the pair of amplification paths 51, 52 at one end side of the resistor 222.

[0037] FIG. 12 is a plan view showing the power density distribution of the resistor 222 according to the third embodiment. FIG. 13 is a diagram showing the power density distribution along the center line of the resistor 222 according to the third embodiment. In this embodiment, the width and thickness of the resistor 222 are changed so that the resistance value per unit length of the resistor 222 decreases with increasing distance from the wiring 30 on one end side. This makes it possible to suppress changes in power density in the resistance portion 220, as shown in FIGS. 12 and 13 . Furthermore, it is possible to reduce the power density at a location on the one end side where power concentration is particularly likely to occur. Therefore, it is possible to suppress the occurrence of locations in the resistor 222 where the power density distribution is extremely concentrated.

[0038] The thickness of resistor 222 is not limited to a stepwise change but may be continuously changed. The planar shape of resistor 122 in the second embodiment may be combined with this embodiment.

[0039] Embodiment 4 FIG. 14 is a plan view of a resistor section 320 according to the fourth embodiment. In this embodiment, the structure of the resistor section 320 is different from that of the first embodiment. The other structures are the same as those of the first embodiment. The resistor section 320 has a resistor element 322 whose width at the other end is narrower than that at one end. A pair of conductor patterns 324 electrically connected to the resistor element 322 is provided on both sides of the resistor element 322 in the width direction. In this embodiment, the width of the second portion 326 of each conductor pattern 324 continuously increases toward the first portion 325. Furthermore, at one end side of the resistor element 322, a pair of wirings 30 connects the second portions 326 of the pair of conductor patterns 324 to a pair of amplification paths 51 and 52.

[0040] In this embodiment as well, the width of the resistor 322 is changed so that the resistance value per unit length of the resistor 322 decreases with increasing distance from the wiring 30 on one end side. Furthermore, in this embodiment, the width of the second portion 326 of the conductor pattern 324 continuously increases toward the first portion 325. In other words, the corners of the conductor pattern 324 are formed into a fillet shape. This makes it easier to distribute power to portions of the resistor 322 that are far from the portion where the wiring 30 is connected.

[0041] FIG. 15 is a plan view showing the power density distribution of the resistor 322 according to the fourth embodiment. FIG. 16 is a diagram showing the power density distribution along the center line of the resistor 322 according to the fourth embodiment. According to the structure of this embodiment, it is possible to suppress changes in power density in the resistor portion 320. Furthermore, it is possible to reduce the power density at a location where power concentration is particularly likely to occur on one end side. Therefore, it is possible to suppress the occurrence of locations in the resistor 322 where the power density distribution is extremely concentrated.

[0042] The conductor pattern 324 of this embodiment may be applied not only to the first embodiment but also to the second and third embodiments.

[0043] Embodiment 5. 17 is a plan view of a resistor section 420 according to embodiment 5. This embodiment differs from embodiment 1 in that it includes a wire 428 that connects the first portion 25 and the second portion 26 of the conductor pattern 24. The other structures are similar to those of embodiment 1.

[0044] FIG. 18 is a plan view showing the power density distribution of the resistor 22 according to the fifth embodiment. FIG. 19 is a diagram showing the power density distribution along the center line of the resistor 22 according to the fifth embodiment. In this embodiment, gold wires 428 are connected to the corners of the conductor pattern 24. This makes it easier to distribute power to parts of the resistor 22 that are far from the part where the wiring 30 is connected. This makes it possible to suppress changes in power density in the resistance portion 420, as shown in FIGS. 18 and 19. Furthermore, it is possible to reduce the power density at a part where power concentration is particularly likely to occur on one end. Therefore, it is possible to suppress the occurrence of parts in the resistor 22 where the power density distribution is extremely concentrated.

[0045] The connection point of the wire 428 is, for example, one end side of the first portion 25. However, the connection is not limited to this, and the wire 428 may be connected to the center or the other end side of the first portion 25. Note that the wire 428 may be applied not only to the first embodiment but also to the second, third, and fourth embodiments.

[0046] Embodiment 6 FIG. 20 is a plan view of a resistor section 520 according to the sixth embodiment. In this embodiment, the structure of the resistor section 520 differs from that of the first embodiment. The other structures are the same as those of the first embodiment. The resistor section 520 has a resistor 522 whose width at one end is narrower than that at the other end. Specifically, the resistor 522 has a tapered shape from one end to the other. A pair of conductor patterns 524 electrically connected to the resistor 522 are provided on both sides of the resistor 522 in the width direction. The conductor pattern 524 has a tapered shape whose width increases as it moves away from the point where the wiring 30 is connected. Furthermore, at one end side of the resistor 522, the pair of wirings 30 connect the pair of conductor patterns 524 to the pair of amplification paths 51 and 52.

[0047] FIG. 21 is a plan view showing the power density distribution of the resistor 522 according to the sixth embodiment. FIG. 22 is a diagram showing the power density distribution along the center line of the resistor 522 according to the sixth embodiment. In this embodiment, too, the resistance value per unit length of the resistor 522 decreases with increasing distance from the wiring 30 on one end side. Furthermore, by increasing the width of the conductor pattern 524 with increasing distance from the connection point with the wiring 30, power can be more easily delivered to the other end side. This provides the effect of dispersing power in the resistor section 20. The above structure can suppress changes in power density in the resistor section 520, as shown in FIGS. 21 and 22 . Furthermore, it can reduce the power density, particularly at a location on the one end where power concentration is likely to occur. Therefore, it is possible to suppress the occurrence of locations in the resistor 522 where the power density distribution is extremely concentrated.

[0048] This embodiment may be combined with Embodiment 2 so that the width of resistor 522 narrows stepwise from one end to the other. Also, the change in film thickness in Embodiment 3 or conductor pattern 324 in Embodiment 4 may be applied to this embodiment.

[0049] Embodiment 7 FIG. 23 is a plan view of a resistor section 620 according to the seventh embodiment. FIG. 24 is a cross-sectional view obtained by cutting the resistor 622 of FIG. 23 along line C-C'. In this embodiment, the structure of the resistor section 620 is different from that of the first embodiment. The other structures are the same as those of the first embodiment. The resistor section 620 has a resistor 622 that is thicker at one end than at the other end. Specifically, the film thickness of the resistor 622 increases in a stepwise manner from one end to the other end. In a plan view, the resistor 622 is, for example, a rectangle with a constant width.

[0050] A pair of conductor patterns 624 electrically connected to the resistor 622 are provided on both sides of the resistor 622 in a direction intersecting the direction from one end to the other end. In this embodiment, the one end side refers to the side where the resistor 622 is thinner, and the other end side refers to the side where the resistor 622 is thicker. At the one end side of the resistor 622, a pair of wirings 30 connects the pair of conductor patterns 624 and the pair of amplification paths 51, 52.

[0051] FIG. 25 is a plan view showing the power density distribution of the resistor 622 according to the seventh embodiment. FIG. 26 is a diagram showing the power density distribution along the center line of the resistor 622 according to the seventh embodiment. In this embodiment, the thickness of the resistor 622 is changed so that the resistance value per unit length of the resistor 622 decreases with increasing distance from the wiring 30 on one end side. This makes it possible to suppress changes in power density in the resistance portion 620, as shown in FIGS. 25 and 26. Furthermore, it is possible to reduce the power density at a location on the one end side where power concentration is particularly likely to occur. Therefore, it is possible to suppress the occurrence of locations in the resistor 622 where the power density distribution is extremely concentrated.

[0052] The thickness of resistor 622 is not limited to a stepwise change but may be continuously changed. Furthermore, conductive pattern 324 of the fourth embodiment or wire 428 of the fifth embodiment may be applied to this embodiment.

[0053] Embodiment 8 27 is a plan view of resistor section 720 according to embodiment 8. This embodiment differs from embodiment 6 in that it includes wire 728 that connects first portion 525 and second portion 526 of conductor pattern 524. The other structures are the same as those of embodiment 6. Wire 728 connects, for example, a central portion of first portion 525 in a direction from one end to the other end to second portion 526.

[0054] FIG. 28 is a plan view showing the power density distribution of resistor 522 according to the eighth embodiment. FIG. 29 is a diagram showing the power density distribution along the center line of resistor 522 according to the eighth embodiment. In this embodiment, first portion 525 and second portion 526 of conductor pattern 524 are connected by wire 428, which is a gold wire. This makes it easier to distribute power to portions of resistor 522 that are far from the portion where wiring 30 is connected. In particular, this effect can be enhanced by connecting wire 728 to the center of first portion 525, which is far from the portion where wiring 30 is connected.

[0055] 28 and 29, it is possible to suppress changes in power density in the resistor section 520. It is also possible to reduce the power density at a location where power concentration is particularly likely to occur on one end side. Therefore, it is possible to suppress the occurrence of locations in the resistor 522 where the power density distribution is extremely concentrated.

[0056] The central portion of first portion 525 to which wire 728 is connected may be the middle portion when first portion 525 is divided into three equal parts in the longitudinal direction. Wire 728 may be connected to one end or the other end of first portion 525. Wire 728 of the present embodiment may be applied to not only embodiment 6 but also embodiments 1 to 4 and 7.

[0057] Embodiment 9 30 is a plan view of a resistor section 820 according to embodiment 9. In this embodiment, the location where wire 828 is connected is different from that of embodiment 8. The other structures are the same as those of embodiment 8. Wire 828 connects the other end of first section 525 to second section 526.

[0058] FIG. 31 is a plan view showing the power density distribution of resistor 522 according to the ninth embodiment. FIG. 32 is a diagram showing the power density distribution along the center line of resistor 522 according to the ninth embodiment. In this embodiment, first portion 525 and second portion 526 of conductor pattern 524 are connected by wire 828, which is a gold wire. This makes it easier to distribute power to portions of resistor 522 that are far from the portion where wiring 30 is connected. In particular, this effect can be enhanced by connecting wire 828 to an end of first portion 525 that is far from the portion where wiring 30 is connected.

[0059] 31 and 32, it is possible to suppress changes in power density in the resistor section 520. It is also possible to reduce the power density at a location where power concentration is particularly likely to occur on one end side. Therefore, it is possible to suppress the occurrence of locations in the resistor 522 where the power density distribution is extremely concentrated.

[0060] The wire 828 of this embodiment may be applied to not only the sixth embodiment but also the first to fourth and seventh embodiments.

[0061] Embodiment 10 FIG. 33 is a plan view of a resistor section 920 according to embodiment 10. In this embodiment, the structure of the resistor section 920 is different from that of embodiment 1. Other structures are similar to those of embodiment 1. The resistor section 920 has a resistor element 922. In plan view, the resistor element 922 is, for example, a rectangle with a constant width. The thickness of the resistor element 922 may also be constant. The resistor element 922 may have a constant resistance value per unit length.

[0062] A pair of conductor patterns 924 electrically connected to the resistor 922 are provided on both sides of the resistor 922 in a direction intersecting the direction from one end to the other. The conductor patterns 924 are, for example, linear. The pair of wirings 30 connect the pair of conductor patterns 924 and the pair of amplification paths 51, 52 at the center of the resistor 922 in the direction from one end to the other.

[0063] FIG. 34 is a plan view showing the power density distribution of the resistor 922 according to the tenth embodiment. FIG. 35 is a diagram showing the power density distribution along the center line of the resistor 922 according to the tenth embodiment. In this embodiment, a pair of wirings 30 are connected to positions of the conductor pattern 924 corresponding to the center of the resistor 922. Therefore, compared to the comparative example of FIG. 4, the distance from the wirings 30 to the end of the resistor 922 can be reduced. This makes it possible to suppress changes in power density in the resistive section 920, as shown in FIGS. 34 and 35. Furthermore, it is possible to reduce the power density at locations where power concentration is particularly likely to occur at the end. Therefore, it is possible to suppress the occurrence of locations in the resistor 922 where the power density distribution is extremely concentrated.

[0064] When the length of the resistor 922 is L, the central portion, which is the connection point of the wiring 30, is located at a distance L / 2 from the end of the resistor 922. Note that the central portion of the resistor 922 does not have to be located at a distance L / 2 in the strict sense. For example, the wiring 30 may be connected to the middle portion of the resistor 922 when the resistor 922 is divided into three equal parts in the longitudinal direction.

[0065] The technical features described in each embodiment may be used in appropriate combination.

[0066] Various aspects of the present disclosure are summarized below as appendices. (Appendix 1) An input terminal, An output terminal; a pair of amplification paths each having a transistor, the amplification paths being provided in parallel between the input terminal and the output terminal; a resistor portion connecting the pair of amplification paths; Equipped with The resistor portion is a resistor whose width at one end is narrower than that at the other end; a pair of conductor patterns provided on both sides of the resistor in the width direction and electrically connected to the resistor; a pair of wirings connecting the one end sides of the pair of conductor patterns and the pair of amplification paths; An amplifier comprising: (Appendix 2) 2. The amplifier according to claim 1, wherein the pair of conductor patterns are arranged from one end to the other end of the resistor. (Appendix 3) 3. The amplifier according to claim 1, wherein each of the pair of conductor patterns has a width at the one end side that is wider than a width at the other end side. (Appendix 4) a matching circuit board provided on the output side of the transistor; 4. The amplifier according to claim 1, wherein the resistor section is provided on the matching circuit board. (Appendix 5) 5. The amplifier according to claim 1, wherein at least a portion of the resistor has a tapered shape. (Appendix 6) 6. The amplifier according to claim 5, wherein the resistor has a tapered shape from the one end to the other end. (Appendix 7) 5. The amplifier according to claim 1, wherein the resistor has a portion whose width narrows stepwise from the one end to the other end. (Appendix 8) 8. The amplifier according to claim 1, wherein the resistor is thicker at the other end than at the one end. (Appendix 9) Each of the pair of conductor patterns is a first portion provided along the resistor from the one end to the other end; a second portion extending from the first portion at the one end; and 9. The amplifier according to any one of claims 1 to 8, wherein each of the pair of wires is connected to the second portion. (Appendix 10) 10. The amplifier of claim 9, wherein the second portion has a width that continuously increases toward the first portion. (Appendix 11) 11. The amplifier of claim 9 or 10, further comprising a wire connecting the first portion and the second portion. (Appendix 12) The resistor has a tapered shape from the one end to the other end, 12. The amplifier of claim 11, wherein the wire connects a central portion of the first portion in a direction from the one end to the other end to the second portion. (Appendix 13) The resistor has a tapered shape from the one end to the other end, 12. The amplifier according to claim 11, wherein the wire connects the end of the first portion on the other end side to the second portion. (Appendix 14) An input terminal, An output terminal; a pair of amplification paths each having a transistor, the amplification paths being provided in parallel between the input terminal and the output terminal; a resistor portion connecting the pair of amplification paths; Equipped with The resistor portion is a resistor whose one end is thicker than the other end; a pair of conductor patterns provided on both sides of the resistor in a direction intersecting a direction from the one end toward the other end, the conductor patterns being electrically connected to the resistor; a pair of wirings connecting the one end sides of the pair of conductor patterns and the pair of amplification paths; An amplifier comprising: (Appendix 15) An input terminal, An output terminal; a pair of amplification paths each having a transistor, the amplification paths being provided in parallel between the input terminal and the output terminal; a resistor portion connecting the pair of amplification paths; Equipped with The resistor portion is A resistor, a pair of conductor patterns provided on both sides of the resistor in a direction intersecting a direction from one end to the other end, the conductor patterns being electrically connected to the resistor; a pair of wirings connecting the pair of conductor patterns and the pair of amplification paths at a center portion of the resistor in a direction from the one end to the other end; An amplifier comprising: [Explanation of symbols]

[0067] 1 input terminal, 2, 3 substrate, 4 transistor, 5 substrate, 6 substrate, 7 output terminal, 10 package, 11 wire, 20 resistor portion, 20a resistor portion, 22 resistor, 22a resistor, 24 conductor pattern, 25 first part, 26 second part, 30 wiring, 51, 52 amplification path, 100 amplifier, 100a amplifier, 120 resistor portion, 122 resistor, 124 conductor pattern, 220 resistor portion, 222 resistor, 224 conductor pattern, 244 conductor pattern, 320 resistor portion, 322 resistor, 324 conductor pattern, 325 first part, 326 second part, 420 resistor portion, 428 wire, 520 resistor portion, 522 resistor, 524 conductor pattern, 525 first part, 526 second part, 620 Resistor section, 622, resistor, 624, conductor pattern, 720, resistor section, 728, wire, 820, resistor section, 828, wire, 920, resistor section, 922, resistor, 924, conductor pattern

Claims

1. An input terminal, An output terminal; a pair of amplification paths each having a transistor, the amplification paths being provided in parallel between the input terminal and the output terminal; a resistor portion connecting the pair of amplification paths; Equipped with The resistor portion is a resistor whose width at one end is narrower than that at the other end; a pair of conductor patterns provided on both sides of the resistor in the width direction and electrically connected to the resistor; a pair of wirings connecting the one end sides of the pair of conductor patterns and the pair of amplification paths; An amplifier comprising:

2. 2. The amplifier according to claim 1, wherein the pair of conductor patterns are provided from the one end to the other end of the resistor.

3. 3. The amplifier according to claim 1, wherein each of the pair of conductor patterns has a width at the one end side that is wider than a width at the other end side.

4. a matching circuit board provided on the output side of the transistor; 3. The amplifier according to claim 1, wherein the resistor section is provided on the matching circuit board.

5. 3. The amplifier according to claim 1, wherein at least a portion of the resistor is tapered.

6. 6. The amplifier of claim 5, wherein the resistor is tapered from one end to the other end.

7. 3. The amplifier according to claim 1, wherein the resistor has a portion whose width narrows in a stepwise manner from the one end to the other end.

8. 3. The amplifier according to claim 1, wherein the resistor is thicker at the other end than at the one end.

9. Each of the pair of conductor patterns is a first portion provided along the resistor from the one end to the other end; a second portion extending from the first portion at the one end; and 3. The amplifier according to claim 1, wherein each of the pair of wires is connected to the second portion.

10. 10. The amplifier of claim 9, wherein the second portion increases in width continuously toward the first portion.

11. 10. The amplifier of claim 9, further comprising a wire connecting the first portion and the second portion.

12. The resistor has a tapered shape from the one end to the other end, 12. The amplifier according to claim 11, wherein the wire connects a central portion of the first portion in a direction from the one end to the other end to the second portion.

13. The resistor has a tapered shape from the one end to the other end, 12. The amplifier according to claim 11, wherein the wire connects the end of the first portion on the other end side to the second portion.

14. An input terminal, An output terminal; a pair of amplification paths each having a transistor, the amplification paths being provided in parallel between the input terminal and the output terminal; a resistor portion connecting the pair of amplification paths; Equipped with The resistor portion is a resistor whose one end is thicker than the other end; a pair of conductor patterns provided on both sides of the resistor in a direction intersecting a direction from the one end toward the other end, the conductor patterns being electrically connected to the resistor; a pair of wirings connecting the one end sides of the pair of conductor patterns and the pair of amplification paths; An amplifier comprising:

15. An input terminal, An output terminal; a pair of amplification paths each having a transistor, the amplification paths being provided in parallel between the input terminal and the output terminal; a resistor portion connecting the pair of amplification paths; Equipped with The resistor portion is A resistor, a pair of conductor patterns provided on both sides of the resistor in a direction intersecting a direction from one end to the other end, the conductor patterns being electrically connected to the resistor; a pair of wirings connecting the pair of conductor patterns and the pair of amplification paths at a center portion of the resistor in a direction from the one end to the other end; An amplifier comprising:

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