Rinsing station and device for producing contact metallizations

Abstract

To provide a rinsing station that enables improved rinsing and washing of wafers and produces higher-quality contact metallizations, and a device for producing contact metallizations.SOLUTION: A rinsing station (10) includes a basin (12) forming a processing chamber (11) and serving to receive a rinsing liquid, in particular containing deionized water, for rinsing a wafer (14) receivable in the processing chamber, the basin having at least one inlet (15) for feeding the rinsing liquid into the basin. The inlet is designed as a nozzle arrangement (16), the nozzle arrangement having at least one nozzle (17) by means of which the rinsing liquid can be applied being directed onto the wafer, the nozzle being designed as a fan nozzle or a full-cone nozzle or a hollow-cone nozzle.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a rinsing station comprising a bath forming a processing chamber for receiving a rinsing liquid, in particular containing deionized water, for rinsing wafers receivable in the processing chamber, the bath having at least one inlet for supplying the rinsing liquid to the bath. The present invention also relates to an apparatus for manufacturing contact metallization on the terminal side of wafers, comprising at least one such rinsing station. [Background technology]

[0002] The production of contact metallization on the terminal side of a chip, also known technically as under bump metallization (UBM), is generally carried out on the wafer side, i.e., the entire wafer on which a number of chips are formed undergoes a chemical process before the chips are separated from the wafer, in which an intermediate metallization (called under bump metallization) is applied to the terminal side of the chips, which initially have a surface metallization made of aluminum or copper, and which serves as an adhesion primer for the subsequent application of solder bumps made of a solder material. Only after the solder bumps have been applied, are the chips finally separated from the wafer.

[0003] Apparatus for producing such contact metallization on the terminal side of a wafer, as known, for example, from Chinese Utility Model Application Publication No. 203760439 and German Utility Model Application Publication No. 202022105493, typically comprises at least one cleaning station in which the wafer is cleaned with a cleaning liquid such as nitric acid, at least one deposition station in which contact metal is deposited on the terminal side from a metal solution typically containing a metal, in particular nickel, zinc, palladium, gold, etc., dissolved in a liquid such as nitric acid, the deposition being carried out either galvanically or electrolessly depending on the design of the apparatus, at least one rinsing station in which the wafer surface is rinsed or cleaned, in particular using a rinsing liquid containing deionized water, in order to remove residues, in particular from the deposition station or the cleaning station, and at least one drying station in which the wafer surface is dried.

[0004] Such a rinse station typically comprises a reservoir that forms a processing chamber and serves to receive a rinse liquid for rinsing wafers that can be received in the processing chamber, the rinse liquid being supplied to the processing chamber through an inlet in the reservoir, which in practice is formed by an opening or a simple hole.

[0005] A drawback of this type of rinsing station is that, in particular, the rinsing liquid supplied to the bath via this type of inlet while the wafer is received in the processing chamber does not allow optimal rinsing and / or cleaning of the wafer, with residues on the wafer surface being essentially completely removed. The aforementioned drawbacks mean that the quality of the contact metallization produced by the apparatus for producing contact metallization, which includes this type of rinsing station, is reduced. Summary of the Invention [Problem to be solved by the invention]

[0006] It is therefore an object of the present invention to propose a rinsing station and an apparatus for producing contact metallizations which allows improved rinsing and / or cleaning of wafers and / or produces higher quality contact metallizations. [Means for solving the problem]

[0007] This object is achieved by a rinsing station having the features of claim 1 and by an apparatus for producing contact metallizations having the features of claim 14.

[0008] The rinsing station according to the invention comprises a bath forming a processing chamber and serving to receive a rinsing liquid, in particular containing deionized water, for rinsing wafers receivable in the processing chamber, the bath having at least one inlet for supplying the rinsing liquid to the bath, the inlet being designed as a nozzle arrangement, the nozzle arrangement having at least one nozzle capable of applying the rinsing liquid towards the wafer, the nozzle being designed as a fan nozzle or a full cone nozzle or a hollow cone nozzle.

[0009] According to the present invention, the rinsing station forms a processing chamber and includes a tank adapted to receive a rinsing liquid, particularly containing deionized water, for rinsing wafers receivable in the processing chamber. In principle, the rinsing station can be used to rinse any object suitable for a rinsing process, including metal and / or plastic and / or ceramic materials. However, the rinsing station is particularly suitable for rinsing wafers, the wafer surfaces of which can be rinsed and / or cleaned during the rinsing process. The rinsing liquid may contain deionized water. In addition to deionized water, the rinsing liquid may also contain additives, particularly solvents, such as isopropyl alcohol (IPA). The rinsing liquid can be deionized water. Deionized water is also called demineralized water. Depending on the purity of deionized water, purified water and / or low-salt water, ultrapure water or pure water, and high-purity water can be distinguished. The residual electrical conductivity of deionized water decreases from purified water or low-salt water to ultrapure water or pure water to high-purity water. Preferably, the deionized water can be ultrapure water to achieve optimized rinsing results. The bath can have an opening through which the wafer can be inserted into the processing chamber, preferably from above, to perform the rinsing process and removed from the processing chamber after the rinsing process. Furthermore, the bath can have a quadrilateral, preferably rectangular, base or cross-sectional area. Furthermore, the bath can have one bottom wall and four side walls. The bottom wall and side walls can define a processing chamber that can extend from the bottom wall to the opening. The four side walls can include two longitudinal walls and two lateral walls. Preferably, the longitudinal walls are longer than the lateral walls. The longitudinal walls can also have a length corresponding to the lateral walls.

[0010] According to the present invention, the bath has at least one inlet for supplying the rinsing liquid to the bath, the inlet being designed as a nozzle arrangement, and the nozzle arrangement has at least one nozzle capable of applying the rinsing liquid toward the wafer, the nozzle being designed as a fan nozzle (also called a flat jet nozzle), a full cone nozzle, or a hollow cone nozzle. Thus, the bath preferably has at least one inlet arranged laterally of the bath and designed as a nozzle arrangement, the nozzle arrangement having at least one nozzle designed as a fan nozzle, a full cone nozzle, or a hollow cone nozzle capable of applying and / or spraying the rinsing liquid toward the wafer when the wafer is received in the bath. The fan nozzle, full cone nozzle, or hollow cone nozzle design advantageously allows the jet of rinsing liquid formed by the nozzle to be fanned and / or expanded. Such a fanned and / or expanded jet results in optimized rinsing and / or cleaning of the wafer. Preferably, the nozzle arrangement has at least two, particularly preferably at least three, nozzles. Thus, the nozzle arrangement can have multiple nozzles. Fan nozzles, full cone nozzles, and / or hollow cone nozzles can be combined with one another. Preferably, the nozzles can be arranged on at least one side wall of the vessel, preferably on two opposing side walls of the vessel. Preferably, the nozzles can be arranged on each side wall, preferably in a row, in the region of the side wall's edge, and the nozzles can be arranged in each row, preferably equidistant from each other. It is also conceivable that nozzles can be arranged on all four side walls of the vessel so that wafers can be rinsed from all sides. Furthermore, the nozzles can be designed so that the jet angle, i.e., the angle at which each jet can be emitted from each nozzle, can be adjusted.When the rinsing station is a component of an apparatus for producing contact metallization, the rinsing station enables the production of higher quality contact metallization, in particular because it can essentially completely remove residues from a deposition process performed by a deposition station of the apparatus prior to the rinsing process and / or from a cleaning process performed by a cleaning station of the apparatus prior to the rinsing process.

[0011] Advantageously, the bath can have an outlet, preferably located at the bottom of the bath and preferably designed as a free drain, that serves to drain the rinsing liquid from the bath. During the rinsing process, residues from the wafer surface of the wafer can enter the rinsing liquid and thus contaminate the rinsing liquid. The residues can originate, for example, from a deposition station of an apparatus for producing contact metallization, where the apparatus also includes a rinsing station, or from a cleaning station of the apparatus. The contaminated rinsing liquid during rinsing of the wafer can be drained from the bath via the outlet. The bath can also be completely drained, i.e., emptied, via the drain. Draining or emptying can be relatively slow or relatively fast. If the outlet is designed as a free drain, the rinsing liquid can be drained and / or emptied from the bath relatively quickly without backflow. In addition to the cleaning effect that may result from the application of rinse liquid to the wafer via a nozzle and, in some cases, from the immersion of the wafer in a bath filled with rinse liquid when the wafer is inserted into the bath, a further cleaning effect may advantageously result from the fact that a bath filled with rinse liquid can be emptied relatively quickly via a free drain by utilizing the adhesive force of the rinse liquid on the wafer surface when the wafer is placed in the bath. The rinsing process may include several rinse cycles, in which the bath can be emptied by draining contaminated rinse liquid from the bath via an outlet when the wafer is placed in the bath, and then refilled by supplying new rinse liquid to the bath, particularly via an inlet. While the contaminated rinse liquid is being drained from the bath, new rinse liquid can be supplied to the bath via the inlet. At the same time, the entire bath can be emptied, since more contaminated rinse liquid can be drained from the bath via the outlet per unit of time in terms of volume than new rinse liquid can be supplied to the bath via the inlet. The inlet may be part of a rinse station and connected to a container in which new rinse liquid can be stored.An outlet may also be part of the rinse station and may be connected to a container from which contaminated rinse liquid can be drained and / or stored. The outlet may also be connected to a public sewer network. Once the wafers have been cleaned and / or residues removed from the wafers after a certain number of rinse cycles, the wafers may be removed from the bath. After the rinse process, the bath may be emptied before or after the wafers are removed from the bath and then refilled when the wafers are removed from the bath, so that the rinse station is available to perform the rinse process on other wafers. The rinse process may involve a process step in which the same amount of contaminated rinse liquid is drained from the bath via the outlet as new rinse liquid is supplied to the bath via the inlet per unit time in terms of volume, thereby achieving continuous and uniform rinsing of wafers.

[0012] Advantageously, the rinse station may comprise a sample analyzer that may be configured to analyze a sample of the rinse liquid taken from the bath, by means of which the purity of the rinse liquid may be determined and / or measured, based on which it may be assessed whether the wafer has been cleaned and / or whether residues have been removed, and consequently the rinse process may be terminated.

[0013] Advantageously, the bath can have an overflow section, and the sample analyzer can be connected to the overflow section so that samples can be taken from the rinse liquid drained from the bath through the overflow section. For this purpose, a deflection channel for the bath can be provided outside the bath, and the rinse liquid drained from the bath through the overflow section can be supplied to the sample analyzer via the deflection channel. The deflection channel can have an outlet leading to an overflow container of the sample analyzer, from which the rinse liquid can reach a sample sensor for the measurement probe of the sample analyzer via the measurement path of the sample analyzer, which helps to prevent and prevent empty runs. The measurement path can be made integral with the overflow container. After the bath is emptied by draining the rinse liquid through the outlet, the rinse liquid can be supplied to the bath through the inlet at least until the fill level of the rinse liquid in the bath reaches an overflow section, which can be located on at least one side wall of the bath. Samples can be easily taken from the bath through the overflow section without the need for additional removal devices such as pumps. It is also conceivable that a sample analyzer can be connected to the outlet so that a sample can be taken via the outlet while the rinse liquid is being drained from the bath. Preferably, the nozzle is located below the overflow.

[0014] Advantageously, each side wall of the vessel can have perforations, preferably in the region of the side wall's edge, which can form an overflow. The perforations can be designed in the form of a hole arrangement, preferably having a plurality of holes arranged in a row. Preferably, the perforations and / or hole arrangement can have a row of holes extending parallel to the edge of each side wall, with said edge being located in the region of the vessel's opening. The holes can preferably be designed identically. In principle, the geometric shape and / or size of the cross-section of the holes can be selected appropriately. For example, the holes can have a cross-section with a circular or square geometric shape. The design of the overflow as perforations in the side wall allows samples representative of the purity of the rinsing liquid to be taken throughout the vessel, i.e., not just locally within the vessel.

[0015] Advantageously, the tank can be configured so that a transport receptacle containing multiple wafers can be inserted into the tank from above, allowing multiple wafers to be subjected to the rinsing process simultaneously. The transport receptacle can be formed as a basket. In the transport receptacle, the wafers can be positioned parallel to each other at equal distances and aligned vertically or horizontally. Support elements for the tank can be arranged and / or fixed on the bottom wall of the tank, and the support elements can support the transport receptacle containing the wafers.

[0016] Advantageously, the tank can have another inlet for supplying rinsing liquid to the tank. The other inlet can be designed as at least one opening and / or at least one hole. Preferably, the other inlet can be arranged laterally on the tank. In this regard, the other inlet can be arranged on at least one side wall of the tank, preferably on two opposing side walls, preferably adjacent to the edge of each side wall located in the area of ​​the bottom wall. The provision of an additional inlet allows the tank to be filled or flooded relatively quickly. The rinsing liquid can be supplied to the tank simultaneously via the inlet and the other inlet.

[0017] Advantageously, the rinsing station may include at least one pipe arrangement connected to the inlet. Furthermore, the rinsing station may include other pipe arrangements connected to other inlets. The pipe arrangement may include a first distribution pipe connected to the nozzle and a second distribution pipe formed separately from the first distribution pipe and connected to the other nozzle. The other pipe arrangement may be designated as a third distribution pipe. Each of the first and second distribution pipes and / or the third distribution pipe may have a connection for connecting the respective distribution pipe to an inlet pipe for supplying rinsing liquid or an outlet pipe for draining the rinsing liquid. The inlet pipe may be connected to a container for fresh rinsing liquid, and the outlet pipe may be connected to a container for contaminated liquid and / or to the public sewer network.

[0018] Advantageously, the rinsing station may include a control device configured to at least control the supply of rinsing liquid to the bath via the inlet. Furthermore, the control device may be configured to control the supply of rinsing liquid to the bath via another inlet and / or the drainage of rinsing liquid from the bath via the outlet. The bath may include valves assigned to the inlet and / or other inlets and / or outlets and controlled by the control device. A shared valve may be assigned to the nozzle, and other shared valves may be assigned to other nozzles. Separate valves may also be assigned to each nozzle and / or each other nozzle. The control device may interact with the sample analyzer so as to transmit the analysis results obtained by the sample analyzer, in particular the purity of the rinsing liquid, to the control device, allowing the control device to control the valves depending on the analysis results. In particular, the control device may control the rinsing time and / or the rinsing amount.

[0019] Advantageously, the rinsing station can comprise a filling level measuring device which can be configured to measure the filling level of the tub, with which the control device can interact in such a way that the filling level measured by the filling level measuring device can be transmitted to the control device, so that the control device can control the valve depending on the filling level.

[0020] Advantageously, the tank can have a preferably pivotable lid, which can cover the opening of the tank when the lid is in the closed position. The lid can reduce heat exchange between the rinsing liquid in the tank and the environment. Furthermore, in this way, the rinsing liquid in the tank can be protected from contamination from the outside. Spray mist can also be avoided in this way. To insert a wafer into the processing chamber and / or to remove a wafer from the processing chamber, the lid can then be opened and then closed again. The lid can also be designed to be movable or otherwise releasable or closable.

[0021] Advantageously, the nozzle arrangement can have at least one other nozzle capable of applying rinsing liquid toward the lid, and the other nozzle can be preferably designed as a fan nozzle, full cone nozzle, or hollow cone nozzle. Preferably, the nozzle arrangement has at least two other nozzles. Thus, the nozzle arrangement can have multiple other nozzles. In this regard, fan nozzles, full cone nozzles, and / or hollow cone nozzles can be combined with each other. Preferably, the other nozzles can be arranged on at least one side wall of the tub where no nozzles are arranged, preferably on two opposing side walls of the tub. Preferably, the other nozzles can be arranged on each side wall, preferably in a row, in the region of the edge of the side wall, and the other nozzles can be arranged in a row, preferably equidistant from each other. It is also conceivable that other nozzles are arranged on all four side walls of the tub so that the lid can be rinsed on all sides. Furthermore, the other nozzles can be designed so that the jet angle, i.e., the angle at which each jet from each other nozzle can be emitted, can be adjusted. The lid can be rinsed or cleaned using another nozzle, thereby preventing contamination of the lid, which could lead to wafer contamination and / or falsify analytical results due to contamination of the rinse solution. If the other nozzle is designed as a fan nozzle, full cone nozzle, or hollow cone nozzle, the fanned or expanded jet formed by the nozzle provides optimized rinsing and / or cleaning of the lid. Preferably, the other nozzle can be positioned above the overflow section. The rinse solution can also be applied to the wafer by another nozzle. Depending on whether the wafer is positioned parallel or transverse to the length of the bath in the processing chamber, and particularly depending on the wafer's dimensions, for example, whether the wafer is an 8-inch wafer or a 12-inch wafer, the other nozzle can be adjusted so that the jet is directed toward the wafer. A rinse station can be provided, particularly for rinsing 8-inch and / or 12-inch wafers.

[0022] Advantageously, the rinse station may include a temperature control device, preferably for controlling the temperature of the rinse liquid before it is supplied to the bath. The temperature control device may include a heat exchanger arrangement. The temperature control device may be used to increase and / or decrease the temperature of the rinse liquid. Cold and hot rinse liquids may also be mixed, and a desired mixed temperature may be achieved by mixing the cold and hot rinse liquids in the appropriate ratio. The rinse station may further include a temperature measuring device, capable of measuring the temperature of the rinse liquid before it is supplied to the bath and / or the temperature of the rinse liquid in the bath. The controller may interact with the temperature measuring device so that the temperature measured by the temperature measuring device can be transmitted to the controller, allowing the controller to control the valve according to the temperature.

[0023] In a method for rinsing a wafer using a rinse station, the wafer can be received in a processing chamber formed by a bath of the rinse station. The wafer can be inserted into the processing chamber filled with a rinse liquid, particularly containing deionized water, and the wafer can be immersed and / or submerged in the rinse liquid. As a result of the immersion and / or submersion in the rinse liquid, the wafer can be cleaned. The rinse liquid can then be emptied from the bath by draining it from the bath through an outlet, preferably located at the bottom of the bath and preferably designed as a free drain. The bath can then be filled with the rinse liquid by supplying the rinse liquid to the bath through at least one inlet of the bath. In this regard, the rinse liquid can be applied to the wafer by at least one nozzle of a nozzle configuration, which can be designed as a fan nozzle, a full cone nozzle, or a hollow cone nozzle, and the inlet can be designed as a nozzle. Applying the rinse liquid to the wafer can rinse the wafer, which can further clean the wafer. After filling the bath, a sample of the rinse liquid can be taken from the bath, and the sample can be analyzed by a sample analyzer of the rinse station. Based on the analysis results, particularly the purity of the rinse solution as determined by the sample analyzer, it can be concluded whether the wafer has been cleaned. The process of emptying the contaminated rinse solution from the bath, filling the bath with new rinse solution, and taking and analyzing samples of the rinse solution can be repeated as often as necessary until the wafer is cleaned. If the analysis indicates that the wafer is clean, the bath can be emptied when the wafer is placed in the processing chamber. The wafer can then be removed from the processing chamber. Alternatively, the bath can be emptied after the wafer is removed from the processing chamber. The bath can then be filled with rinse solution. The rinse station is then available to rinse another wafer.

[0024] Wafers can also be inserted into empty or partially filled vessels, which can then be filled later, and samples can then be taken and analyzed.

[0025] "Filled tank" refers to the tank condition where the tank is filled to a target level, specifically, the level at which the rinse liquid in the tank is at the level of the tank's overflow.

[0026] For the advantageous effects of this method, reference is made to the description of the advantages of the rinsing station according to the invention.

[0027] Further advantageous embodiments of the method result from the characterizing recitations of the dependent claims which refer to device claim 1.

[0028] An apparatus according to the present invention for manufacturing contact metallization on a terminal side of a wafer includes at least one rinsing station according to the present invention, wherein the processing chamber of the rinsing station is configured to receive a transfer receptacle having a plurality of wafers therein, and the apparatus has a manipulator for handling the transfer receptacle.

[0029] Advantageously, the apparatus may comprise a plurality of workstations, preferably arranged in a row, each having a processing chamber for receiving a transport receptacle with a wafer therein, the plurality of workstations comprising rinsing stations as workstations, the apparatus having a conveyor on which a manipulator is arranged, the manipulator interacting with the conveyor making it possible to position the transport receptacles in the transport direction in a selectable sequence of the processing chambers.

[0030] Advantageously, the manipulator may comprise a horizontally movable carrier connected to the conveyor belt of the conveyor and having at least one gripping arm movable vertically relative to the carrier.

[0031] Advantageously, the apparatus can comprise an entry / exit station for equipping the apparatus with at least one transfer receptacle, and / or the plurality of workstations can comprise at least one deposition station, at least one cleaning station, and / or at least one drying station. The deposition station can be intended for depositing metals, in particular nickel, zinc, palladium, gold, etc., galvanically or electrolessly, on the terminal surfaces. The metals can be dissolved in a liquid, such as nitric acid. A solution of the metal dissolved in a liquid can be received in the processing chamber of the deposition station. The cleaning station can be intended for cleaning the wafer, in particular the terminal surfaces, using a cleaning liquid, for example nitric acid. The cleaning liquid can be received in the processing chamber of the cleaning station. The drying station can be intended for drying the wafer, in particular the wafer surface.

[0032] Preferred embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. [Brief explanation of the drawings]

[0033] [Figure 1] 1 shows a perspective side view of one of the rinse stations, viewed diagonally from the top right. [Figure 2] 1 shows a side perspective view of the rinse station, viewed diagonally from the top left. [Figure 3] 1 shows a top view of the rinse station. [Figure 4] 1 shows a cross-sectional view of a rinse station. [Figure 5] 10 shows another cross-sectional view of the rinse station. [Figure 6] 1 shows a partial perspective view of the rinsing station in the area of ​​the sample analyzer of the rinsing station. [Figure 7] 1 shows a partially exploded perspective view of a sample analyzer; DETAILED DESCRIPTION OF THE INVENTION

[0034] The combined diagram of Figures 1 to 7 shows a rinsing station 10 comprising a bath 12 forming a processing chamber 11 and functioning to receive a rinsing liquid (not shown), in particular containing deionized water, for rinsing a plurality of wafers 14 received in a transport receptacle 13 that can be received in the processing chamber 11, the plurality of wafers 14 being insertable into the bath 12 from above to carry out the rinsing process and / or being removable from the bath 12, and thus being able to be handled by a manipulator (not shown) of an apparatus (not shown) for manufacturing contact metallization, the rinsing station 10 being able to form a component of said apparatus.

[0035] The tank 12 has an inlet 15 for supplying the rinsing liquid thereto, the inlet 15 being designed as a nozzle arrangement 16. The nozzle arrangement 16 comprises a plurality of nozzles 17, designed as fan nozzles and / or flat-jet nozzles, capable of applying the rinsing liquid toward the wafers 14. In this regard, the nozzles 17 are arranged in a row equidistant from one another on two opposing longitudinal walls 18 of the tank 12. In this case, each longitudinal wall 18 is provided with four nozzles 17. The tank 12 has at least one valve (not shown here) assigned to the nozzles 17. Furthermore, the nozzle arrangement 16 comprises a plurality of other nozzles 19, also designed as fan nozzles and / or flat-jet nozzles, capable of applying the rinsing liquid toward a pivotable lid 20 of the tank 12, which, in its closed position, covers an opening 21 of the tank 12. The other nozzles 19 are arranged in a row equidistant from one another on two opposing lateral walls 22 of the tank 12. In this case, each lateral wall 22 is provided with two further nozzles 19. The vessel 12 has at least one further valve (not shown here) assigned to the other nozzles 19. The longitudinal walls 18 are longer than the lateral walls 22. However, it is also conceivable that the longitudinal walls 18 and the lateral walls 22 have the same length. The longitudinal walls 18 and the lateral walls 22 form the side walls 18, 22 of the vessel 12.

[0036] Furthermore, the tank 12 has other inlets 23 for supplying rinsing liquid to the tank 12, which are formed by two openings (not shown here) each provided in the region of the edge of a respective lateral wall 22, said edge being adjacent to the bottom wall 24 of the tank 12.

[0037] Furthermore, the rinsing station 10 comprises a pipe arrangement 25 connected to the inlet 15, which comprises a first distribution pipe 26 connected to the nozzle 17 and a second distribution pipe 27 formed separately from the first distribution pipe 26 and connected to another nozzle 19. Furthermore, the rinsing station 10 comprises another pipe arrangement 28 connected to another inlet and designed as a distribution pipe.

[0038] Furthermore, the tub 12 has an outlet 29 arranged in the center of the bottom wall 24, designed as a free drain and serving to drain the rinsing liquid from the tub 12. The tub 12 has a valve 30 assigned to the outlet 29.

[0039] Furthermore, the vessel 12 has an overflow portion 31, and each of the longitudinal walls 18 and lateral walls 22 has perforations 32 formed in the edge region of the respective longitudinal wall, said edge being adjacent to the opening 21, and / or in the edge region of the respective lateral wall, said edge being adjacent to the opening 21, and forming the overflow portion 31. The perforations 32 have a row of holes 33 extending parallel to the respective edge 33 of each longitudinal wall 18 and / or lateral wall 22. A nozzle 17 is arranged on the longitudinal wall 18 below the holes 33, and another nozzle 19 is arranged above the holes 33 in the lateral wall 22.

[0040] Furthermore, the rinsing station 10 comprises a sample analyzer 34 configured to analyze samples of the rinse liquid drawn from the bath 12. In this regard, the sample analyzer 34 is connected to the overflow 31 so that it can draw samples from the rinse liquid drained from the bath 12 via the overflow 31. For this purpose, a deflection channel 35 of the bath 12 is provided outside the bath 12, via which the rinse liquid drained from the bath 12 via the overflow 31 can be supplied to the sample analyzer 34. The deflection channel 35 has an outlet 36 opening into an overflow container 37 of the sample analyzer 34, from which the rinse liquid and / or the sample can reach a sample sensor 39 of the sample analyzer 34 for a measuring probe (not shown here) of the sample analyzer 34 via a measurement path 38 of the sample analyzer 34, which serves to prevent running empty. The measurement path 38 is formed integrally with the overflow container 37.

[0041] Furthermore, the rinsing station 10 comprises a control device (not shown here), which is configured to control the supply of rinsing liquid to the tub 12 via the inlet 15 and the further inlet 23, and the drainage of the rinsing liquid from the tub 12 via the outlet 29. In this regard, the control device controls the nozzle 17, the further nozzle 19 and the outlet 29, of which only the valve 30 is shown here.

[0042] Furthermore, the rinsing station 10 comprises a fill level measuring device 40 (only partially shown) configured to measure the fill level of the basin 12 .

[0043] Additionally, the rinse station 10 includes a temperature control device (not shown here) for controlling the temperature of the rinse liquid before it is delivered to the basin 12 .

[0044] In this example, nozzle 17 and other nozzles 19 are designed as fan nozzles and / or flat jet nozzles. Instead of fan nozzles and / or flat jet nozzles, full cone nozzles or hollow cone nozzles can also be provided. Nozzle 17 and / or other nozzles 19 can also be a combination of fan nozzles and / or flat jet nozzles and / or full cone nozzles and / or hollow cone nozzles. [Explanation of symbols]

[0045] List of codes 10 Rinse Station 11 Processing chamber 12 tanks 13 Transport Receptacle 14 wafers 15 Entrance 16 nozzle configuration 17 nozzles 18 Longitudinal Wall 19 nozzles 20 Lid 21 Opening 22 Lateral Wall 23 Entrance 24 Bottom wall 25 Pipe Configuration 26 Distribution piping 27 Distribution piping 28 Pipe Configuration 29 Exit 30 valves 31 Overflow section 32 perforation 33 holes 34 Sample analyzer 35 Deflection Channel 36 Exit 37 Overflow container 38 Measurement Path 39 Sample Sensor 40 Filling level measuring device

Claims

1. a bath (12) forming a processing chamber (11) and serving to receive a rinsing liquid, in particular containing deionized water, for rinsing wafers (14) receivable in said processing chamber, said bath having at least one inlet (15) for supplying said rinsing liquid to said bath; The inlet is designed as a nozzle arrangement (16), the nozzle arrangement having at least one nozzle (17) capable of applying the rinsing liquid towards the wafer, the nozzle being designed as a fan nozzle, a full cone nozzle or a hollow cone nozzle. A rinsing station (10) characterized by:

2. the basin (12) has an outlet (29), preferably located at the bottom of the basin, preferably designed as a free drain and serving to drain the rinsing liquid from the basin; The rinse station of claim 1 , wherein:

3. the rinse station (10) comprising a sample analyzer (34) configured to analyze a sample of the rinse liquid taken from the bath (12); 3. A rinsing station according to claim 1 or 2, characterized in that:

4. The bath (12) has an overflow section (31), and the sample analyzer (34) is connected to the overflow section so as to collect the sample from the rinse liquid drained from the bath via the overflow section.

4. The rinse station of claim 3, wherein:

5. Each of the side walls (18, 22) of the tank (12) has perforations (32), preferably formed in the region of the edges of the side walls, and forming the overflow part (31).

5. The rinse station of claim 4, wherein:

6. The tank (12) is configured so that a transfer receptacle (13) that receives a plurality of wafers (14) therein is inserted into the tank from above.

10. A rinsing station according to any one of the preceding claims, characterized in that:

7. The tank (12) has another inlet (23) for supplying the rinsing liquid to the tank.

10. A rinsing station according to any one of the preceding claims, characterized in that:

8. The rinsing station (10) comprises at least one pipe arrangement (25) connected to the inlet (15).

10. A rinsing station according to any one of the preceding claims, characterized in that:

9. the rinsing station (10) comprising a control device configured to at least control the supply of the rinsing liquid to the bath (12) via the inlet (15); 10. A rinsing station according to any one of the preceding claims, characterized in that:

10. the rinsing station (10) is provided with a filling level measuring device (40) configured to measure the filling level of the basin (12); 10. A rinsing station according to any one of the preceding claims, characterized in that:

11. The vessel (12) preferably has a pivotable lid (20) which covers an opening (21) of the vessel in the closed position of the lid.

10. A rinsing station according to any one of the preceding claims, characterized in that:

12. The nozzle arrangement (16) has at least one other nozzle (19) capable of applying the rinsing liquid towards the lid (20), the other nozzle being preferably designed as a fan nozzle or a full cone nozzle or a hollow cone nozzle. The rinse station of claim 11 , wherein:

13. The rinsing station (10) preferably includes a temperature control device for controlling the temperature of the rinsing liquid before it is supplied to the bath (12).

10. A rinsing station according to any one of the preceding claims, characterized in that:

14. 10. An apparatus for manufacturing contact metallization on a terminal side of a wafer, comprising at least one rinsing station (10) according to any one of the preceding claims, wherein a processing chamber (11) of the rinsing station is configured to receive a transfer receptacle (13) having a plurality of wafers (14) received therein, the apparatus having a manipulator for handling the transfer receptacle.

15. the apparatus comprises a plurality of workstations, preferably arranged in a row, each workstation having a processing chamber for receiving the transport receptacle (13) with the wafer (14) therein, the plurality of workstations including the rinsing station (10) as a workstation, the apparatus having a conveyor on which the manipulator is arranged, the manipulator interacting with the conveyor to enable the transport receptacle to be positioned in a conveying direction in a selectable sequence of the processing chambers; 15. The device according to claim 14, wherein:

16. The manipulator has a horizontally movable carrier, the carrier having at least one gripping arm connected to a conveyor belt of the conveyor and movable vertically relative to the carrier.

16. The device according to claim 15,

17. the apparatus comprises an entry / exit station for equipping the apparatus with at least one transfer receptacle, and / or the plurality of workstations comprises at least one deposition station and / or at least one cleaning station and / or at least one drying station; 17. The device according to claim 15 or 16, characterized in that

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