Transfer container of semiconductor wafer and manufacturing method of semiconductor element

Abstract

To provide a technique capable of uniformly holding a thin semiconductor wafer and the semiconductor wafer having a different diameter.SOLUTION: A transfer container 100 includes a housing 104 having an opening part 104a through which semiconductor wafers 106, 107, and 108 can be taken in and out from a Y direction, a pair of sills 101 disposed in the housing 104 and supporting a back surface of a peripheral edge part of the semiconductor wafers 106, 107, and 108 in a -X direction and a X direction, a lid 105 capable of opening and closing an opening 104a, and a retainer 110 fixed to an inner surface of a lid 105 and holding end surfaces of the semiconductor wafers 106, 107, and 108 in the Y direction. The retainer 110 includes a fixing part 111 fixed to an inner surface of the lid 104, and a left blade part 112a and a right blade part 112b extending from the fixing part 111 to the left and right, respectively, and having an elastic force. The left blade part 112a and the right blade part 112b hold the end surfaces of the semiconductor wafers 106, 107, and 108 by the elastic force.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor wafer transport container and a method for manufacturing semiconductor devices. [Background technology]

[0002] In conventional semiconductor wafer transport containers, the diameter of the semiconductor wafers stored therein is uniformly determined (for example, 450 mm diameter), and the retainers that hold both sides of the front peripheral edge of the semiconductor wafer are specialized for semiconductor wafers of that size (see, for example, Patent Document 1).

[0003] The technology described in Patent Document 1 proposes holding semiconductor wafers that are sufficiently thick and have a diameter of, for example, 450 mm, with high dimensional accuracy, even though the semiconductor wafers tend to bend due to their own weight within a substrate storage container (equivalent to a transport container). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-108715 Summary of the Invention [Problem to be solved by the invention]

[0005] However, the technology described in Patent Document 1 does not take into consideration the uniform holding of semiconductor wafers thinned to a thickness of several hundred μm or semiconductor wafers with different diameters.

[0006] Therefore, an object of the present disclosure is to provide a technique capable of uniformly holding thinned semiconductor wafers and semiconductor wafers with different diameters. [Means for solving the problem]

[0007] A semiconductor wafer transport container according to the present disclosure comprises a housing having an opening through which semiconductor wafers can be loaded and unloaded from a first direction, a pair of thresholds arranged within the housing and supporting the backside of the peripheral portion of the semiconductor wafer in a second direction intersecting the first direction and a third direction opposite to the second direction, a lid capable of opening and closing the opening, and a retainer fixed to the inner surface of the lid and holding the edge surface of the semiconductor wafer in the first direction, the retainer having a fixing portion fixed to the inner surface of the lid, and left and right wing portions extending respectively to the left and right from the fixing portion and having elastic force, the left and right wing portions holding the edge surface of the semiconductor wafer by the elastic force. [Effects of the Invention]

[0008] According to the present disclosure, by applying a force toward the center of the semiconductor wafer with the left and right wing portions while supporting the rear surface of the peripheral edge of the semiconductor wafer with a pair of thresholds, it is possible to apply a force toward the center of the semiconductor wafer to hold the semiconductor wafer, even for thinned semiconductor wafers and semiconductor wafers with small diameters, and thus thinned semiconductor wafers and semiconductor wafers with different diameters can be held uniformly. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 2 is a top view of a transfer container according to the first embodiment. [Figure 2] 3 is an enlarged top view of a retainer and its periphery provided in the transfer container according to the first embodiment. FIG. [Figure 3] 10 is an enlarged top view showing an example of the retainer and its surroundings when the distance from the fixing portion of the retainer to the edge surface of the semiconductor wafer is 10 mm. FIG. [Figure 4] FIG. 10 is an enlarged top view showing another example of the retainer and its periphery when the distance from the fixing portion of the retainer to the edge surface of the semiconductor wafer is 10 mm. [Figure 5] 10 is an enlarged top view of the retainer and its surroundings when the left and right wing portions of the retainer hold the semiconductor wafer in surface contact. FIG. [Figure 6] 10A and 10B are enlarged top views showing the positional relationship of semiconductor wafers of different diameters housed in a transport container. [Figure 7] 1 is a graph showing the relationship between the diameter of a semiconductor wafer and the force for holding the semiconductor wafer. [Figure 8] FIG. 10 is an enlarged top view showing semiconductor wafers with diameters of 200 mm and 300 mm held by retainers. [Figure 9] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor element. [Figure 10] 1 is a flowchart illustrating a method for manufacturing a semiconductor device. [Figure 11] 10 is an enlarged top view of a retainer provided in a transfer container according to a second embodiment. FIG. [Figure 12] 10 is a view of a retainer provided in a transfer container according to a third embodiment, viewed from the −Y direction. FIG. [Figure 13] FIG. 4 is a cross-sectional view of the left wing portion of the retainer and its surrounding area. [Figure 14] 10 is a view of a retainer provided in a transfer container according to a fourth embodiment, viewed from the −Y direction. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] <First Embodiment> The first embodiment will be described below with reference to the drawings. Fig. 1 is a top view of a transfer container 100 according to the first embodiment. Fig. 2 is an enlarged top view of a retainer 110 and its surroundings provided in the transfer container 100 according to the first embodiment.

[0011] In FIG. 1, the X direction, Y direction, and Z direction are perpendicular to one another. The X direction, Y direction, and Z direction shown in the following figures are also perpendicular to one another. Hereinafter, the direction including the X direction and the −X direction opposite to the X direction will also be referred to as the “X-axis direction.” Hereinafter, the direction including the Y direction and the −Y direction opposite to the Y direction will also be referred to as the “Y-axis direction.” Hereinafter, the direction including the Z direction and the −Z direction opposite to the Z direction will also be referred to as the “Z-axis direction.”

[0012] <Composition of transport container> 1, the transfer container 100 is a transfer container that can store, for example, up to 25 semiconductor wafers 106, 107, and 108 of different diameters. For example, the diameter of the semiconductor wafer 106 is 200 mm, the diameter of the semiconductor wafer 107 is 199 mm or more and 200 mm or less, and the diameter of the semiconductor wafer 108 is 198 mm or more and 199 mm or less. Furthermore, the semiconductor wafers 107 and 108 are thinner than the semiconductor wafer 106.

[0013] The semiconductor wafers stored in the transfer container 100 may be only semiconductor wafers 106 with a diameter of 200 mm, only semiconductor wafers 107 with a diameter of 199 mm or more and 200 mm or less, or only semiconductor wafers 108 with a diameter of 198 mm or more and 199 mm or less. Alternatively, semiconductor wafers 106, 107, and 108 with different diameters may be mixed.

[0014] The transfer container 100 includes a housing 104 which is a box-shaped container, a pair of thresholds 101, a lid 105, and a retainer 110.

[0015] The housing 104 has an opening 104a through which semiconductor wafers 106, 107, and 108 can be inserted and removed from the Y direction (first direction).

[0016] The pair of thresholds 101 are disposed within the housing 104 and support the rear surfaces of the peripheral edges of the semiconductor wafers 106, 107, and 108 in a -X direction (second direction) intersecting the Y direction and in an X direction (third direction) opposite to the X direction. More specifically, fulcrums 102 and 103 are provided spaced apart on each of the pair of thresholds 101, and the fulcrums 102 and 103 hold the rear surfaces of the peripheral edges of the semiconductor wafers 106, 107, and 108. The pair of thresholds 101 are formed in an L-shape when viewed from above (as viewed from the Z direction), but may also be formed in an I-shape.

[0017] The lid 105 is attached to the housing 104 so as to be able to open and close the opening 104a of the housing 104. A retainer 110 is fixed to the center of the inner surface of the lid 105. When the lid 105 is closed, the retainer 110 holds the edge surfaces of the semiconductor wafers 106, 107, and 108.

[0018] Although the semiconductor wafers 106, 107, and 108 are stored with their notches 109 facing away from the opening 104a (in the -Y direction), they may face in any direction. When the semiconductor manufacturing equipment (not shown) stores the semiconductor wafers 106, 107, and 108 in the transfer container 100, the orientation of the notches 109 of the semiconductor wafers 106, 107, and 108 does not have to be the same.

[0019] Next, details of retainer 110 will be described. As shown in FIG. 2, retainer 110 has fixed portion 111 fixed to the inner surface of lid 105, and left and right wing portions 112a and 112b extending from fixed portion 111 in the left and right directions (X-axis direction), respectively. Fixed portion 111 is configured to be detachable from the inner surface of lid 105, for example, by fitting, and therefore retainer 110 is detachable from lid 105. Fixed portion 111 and left and right wing portions 112a and 112b may be integral with or separate from each other. If they are separate, left and right wing portions 112a and 112b are also detachable from fixed portion 111. Left and right wing portions 112a and 112b are configured, for example, from elastic resin plates, and use their elasticity to hold the edge faces (more specifically, the edge faces in the Y direction) of semiconductor wafers 106, 107, and 108. Note that left wing 112a and right wing 112b may be made of elastic metal plates. Furthermore, left wing 112a and right wing 112b are formed symmetrically and are large enough to hold up to 25 semiconductor wafers 106, 107, and 108 in the vertical direction (Z-axis direction).

[0020] Angle 113 is the angle between a perpendicular line extending from the center O of semiconductor wafers 106, 107, and 108 to fixing portion 111 and a line extending from the contact point where retainer 110 and semiconductor wafers 106, 107, and 108 are in contact toward the center O of semiconductor wafers 106, 107, and 108. Left wing portion 112a and right wing portion 112b hold semiconductor wafers 106, 107, and 108 by point contact.

[0021] Furthermore, if the angle between a perpendicular line extending from the center O of the semiconductor wafers 106, 107, and 108 to the pair of sills 101 and a line extending from the fulcrum 102 of the pair of sills 101 toward the center O of the semiconductor wafers 106, 107, and 108 is θ, then angle 113 can also be defined as 90-θ degrees, with the maximum value of angle 113 being approximately 80 degrees. On the other hand, in order to apply a force to the semiconductor wafers 106, 107, and 108 in a direction toward the center O, angle 113 needs to be greater than 0 degrees.

[0022] Fig. 3 is an enlarged top view showing an example of retainer 110 and its periphery when the distance from fixing portion 111 of retainer 110 to the edge surfaces of semiconductor wafers 106, 107, and 108 is 10 mm. Fig. 4 is an enlarged top view showing another example of retainer 110 and its periphery when the distance from fixing portion 111 of retainer 110 to the edge surfaces of semiconductor wafers 106, 107, and 108 is 10 mm. Fig. 5 is an enlarged top view of retainer 110 and its periphery when left wing portion 112a and right wing portion 112b of retainer 110 hold semiconductor wafers 106, 107, and 108 in surface contact.

[0023] 3, for example, if the distance from fixing portion 111 of retainer 110 to the edge faces of semiconductor wafers 106, 107, and 108 is 10 mm and left wing portion 112a and right wing portion 112b extend from the left and right ends of fixing portion 111, respectively, angle 113 will be approximately 30 degrees. For example, if semiconductor wafers 106, 107, and 108 are to be held at an angle smaller than angle 113, the distance from fixing portion 111 to semiconductor wafers 106, 107, and 108 must be reduced, and fixing portion 111 must also be made thicker.

[0024] 4, when angle 113 is set to about 45 degrees, for example, and the distance from fixing portion 111 of retainer 110 to the edge faces of semiconductor wafers 106, 107, and 108 is 10 mm, the length of fixing portion 111 in the X-axis direction is about 60 mm. Holding angle 113 at 45 degrees is desirable because it distributes the force evenly and provides the most stability, but this does not necessarily mean that other angles are also stable. To hold the wafers at an angle of 45 degrees or more, the length of fixing portion 111 in the X-axis direction must be greater than 60 mm.

[0025] 5, the surfaces of left wing 112a and right wing 112b that hold semiconductor wafers 106, 107, and 108 may be formed to trace an arc with the same curvature as the edge of semiconductor wafer 106, 107, and 108, so that the entire surfaces of left wing 112a and right wing 112b that hold semiconductor wafers 106, 107, and 108 come into contact with the edge of semiconductor wafer 106, 107, and 108. In this case, angle 113 is greater than 0 degrees and not greater than 80 degrees, as in the case of point contact. While surface contact alone or a mixture of surface and point contact is acceptable, surface contact alone provides a more stable holding force due to the increased holding area.

[0026] 6 is an enlarged top view showing the positional relationship of semiconductor wafers 106, 107, 108, and 123 of various diameters stored in the transfer container 100. As shown in FIG. 6, the semiconductor wafer 123 with a diameter of 300 mm and the semiconductor wafer 106 with a diameter of 200 mm are stored so as to be in contact with the front reference line. Although not shown, when the semiconductor wafer 123 is stored, the pair of thresholds 101 are positioned so as to be able to support the rear surface of the peripheral edge of the semiconductor wafer 123. On the other hand, the semiconductor wafer 107 with a diameter of 199 mm or more and 200 mm or less and the semiconductor wafer 108 with a diameter of 198 mm or more and 199 mm or less are pushed by the retainer 110 so that their end faces on the -Y side are positioned on the rear reference line.

[0027] Figure 7 is a graph showing the relationship between the diameter of a semiconductor wafer and the force for holding the semiconductor wafer. As shown in Figure 7, when the diameter of the semiconductor wafer changes, the force for holding the semiconductor wafer, i.e., the holding force when holding the semiconductor wafer, changes. The holding force when holding a thinned semiconductor wafer may be in the range of more than 0 N and not more than 2 N. For example, if a spring constant is selected that presses down a semiconductor wafer 107 of 199 mm or more and 200 mm or less with about 1 N, semiconductor wafers of different diameters can be accommodated.

[0028] Fig. 8 is an enlarged top view showing the state in which semiconductor wafers 106 and 123 with diameters of 200 mm and 300 mm are held by retainer 110. The left side of Fig. 8 shows the state in which semiconductor wafer 106 with a diameter of 200 mm is held, and the right side of Fig. 8 shows the state in which semiconductor wafer 123 with a diameter of 300 mm is held.

[0029] As shown in Fig. 8, it is possible to hold not only semiconductor wafer 106 with a diameter of 200 mm, but also semiconductor wafer 123 with a diameter of 300 mm. Compared to holding semiconductor wafer 106 with a diameter of 200 mm, the larger the diameter of semiconductor wafer 123, the more acute the angle 113 (see Fig. 2) becomes, and the holding force increases, but both remain within the above range.

[0030] <Method of manufacturing semiconductor device> Next, a method for manufacturing a semiconductor device using the transfer container 100 will be described. Figures 9(a) to 9(i) are cross-sectional views showing the method for manufacturing a semiconductor device. Figure 10 is a flowchart showing the method for manufacturing a semiconductor device.

[0031] The following describes a method for manufacturing a metal oxide semiconductor field effect transistor (MOSFET) as a semiconductor element. The following description of the manufacturing method focuses on the manufacturing method for the active region of the MOSFET, omitting the termination region and gate signal receiving region. While the MOSFET is described as a planar type, it may be a trench type MOSFET or a semiconductor element other than a MOSFET.

[0032] 10, the method for manufacturing a semiconductor device includes a wafer preparation step (step S1), a first-main-surface-side p-type region formation step (step S2), a first-main-surface-side n-type region formation step (step S3), a first-main-surface-side gate electrode formation step (step S4), a first-main-surface-side source electrode formation step (step S5), a first-main-surface-side protective film formation step (step S6), a second-main-surface-side grinding step (step S7), a second-main-surface-side drain electrode formation step (step S8), a first-main-surface-side protective film removal step (step S9), and a dicing step (step S10). Note that while it is desirable to use a transfer container 100 in steps S1 to S10, for example, the dicing step (step S10) requires transferring the semiconductor wafer to a dedicated carrier, and therefore the transfer container 100 may not be used.

[0033] Each step is explained below. Here, we will explain the case of manufacturing a semiconductor device from a semiconductor wafer 106. As shown in Figures 9(a) and 10, in the wafer preparation step (step S1), multiple semiconductor wafers 106 that will become n-type drift layer 200 are prepared. Possible materials for the semiconductor wafers 106 include Si, SiC, and GaO2. In the following steps, the term semiconductor wafer 106 will be used to refer to a drift layer that has other semiconductor layers or electrodes formed thereon.

[0034] As shown in FIGS. 9(b) and 10, the first main surface side p-type region forming step (step S2) includes an ion implantation step and a heating step. In the ion implantation step, donor ions are implanted into the first main surface side of the semiconductor wafer 106. For example, boron or aluminum is used as the donor. In the heating step, the semiconductor wafer 106 is heated to electrically activate the donor, thereby forming the p-type region 201.

[0035] As shown in FIGS. 9(c) and 10, the first main surface n-type region forming process (step S3) includes an exposure process, an etching process, an ion implantation process, and a heating process. In the exposure process, a photoresist is applied to the first main surface side of the semiconductor wafer 106 so that the thickness is uniform. The photoresist may be either photosensitive or non-photosensitive. Then, a shot pattern is formed in the photoresist film from the first main surface side of the semiconductor wafer 106 using a photomask. In the etching process, the photoresist film is locally removed by performing dry etching or wet etching on the semiconductor wafer 106. In the ion implantation process, acceptor ions are implanted from the first main surface side of the semiconductor wafer 106. For example, nitrogen or phosphorus is used as the acceptor. In the heating process, the semiconductor wafer 106 is heated to electrically activate the acceptor ions, thereby forming an n-type region 202 on the first main surface side.

[0036] As shown in FIGS. 9(d) and 10, the first main surface side gate electrode formation process (step S4) includes an oxide film formation process, a polysilicon deposition process, an exposure process, an etching process, and an oxide film formation process. In the oxide film formation process, the semiconductor wafer 106 is heated in an oxygen-containing atmosphere to form an oxide film 203. In the polysilicon deposition process, polysilicon doped with n-type or p-type impurities is deposited by CVD (Chemical Vapor Deposition) or the like to form a gate electrode. In the exposure process, a photoresist is applied to the first main surface side of the semiconductor wafer 106 so as to have a uniform thickness. The photoresist may be either photosensitive or non-photosensitive. Then, a shot pattern is formed in the photoresist film from the first main surface side of the semiconductor wafer 106 using a photomask. In the etching process, the semiconductor wafer 106 is subjected to dry etching or wet etching to locally remove the photoresist film, thereby forming the gate electrode 204. In the oxide film forming step, the semiconductor wafer 106 is heated in an atmosphere containing oxygen to form the oxide film 205 .

[0037] 9(e) and 10, in the first main surface side source electrode formation process (step S5), a source electrode 206 is formed in a selective region on the first main surface side of the semiconductor wafer 106 using a sputtering device (not shown) or the like. Nickel, for example, can be considered as an electrode material. Furthermore, in order to reduce contact resistance in this process, it is desirable to perform a heat treatment and silicide formation.

[0038] As shown in FIGS. 9(f) and 10, in the first main surface side protective film forming step (step S6), a protective layer 207 is formed on the first main surface side of the semiconductor wafer .

[0039] As shown in FIGS. 9(g) and 10, in the second main surface grinding process (step S7), the semiconductor wafer 106 is turned over, the protective layer 207 on the first main surface side of the semiconductor wafer 106 is adsorbed onto a stage of a grinding device (not shown), and the second main surface side of the semiconductor wafer 106 is ground so that the thickness of the drift layer is 50 μm to 350 μm. At this time, to prevent the end portion of the second main surface of the semiconductor wafer 106 from becoming sharp, it is necessary to shape the end portion in advance. To do this, the end portion needs to be processed to some extent. As a result, the semiconductor wafer 106 with a diameter of 200 mm may become, for example, the semiconductor wafer 107 with a diameter of 199 mm to 200 mm or the semiconductor wafer 108 with a diameter of 198 mm to 199 mm. Damaged layers remain on the surface of the second main surface side of the semiconductor wafers 107 and 108 after grinding, and these may be removed by etching.

[0040] As shown in FIG. 9(h) and FIG. 10, in the second principal surface side drain electrode formation step (step S8), the drain electrode 208 is formed.

[0041] 9(i) and 10, in the first main surface side protective film removal step (step S9), the protective layer 207 formed on the first main surface side of the semiconductor wafer 106 (or semiconductor wafers 107, 108) is removed. Depending on the material of the protective layer 207, if the heat resistance temperature is lower than the temperature rise in the second main surface side drain electrode formation step (step S8), it is necessary to reverse the order of steps S7 and S8. Through the above steps, semiconductor elements are formed on the semiconductor wafer 106 (or semiconductor wafers 107, 108).

[0042] As shown in FIG. 10, in the dicing step (step S10), the semiconductor wafer 106 (or the semiconductor wafers 107 and 108) is cut into individual semiconductor elements.

[0043] The steps from the first main surface side p-type region forming step (step S2) to the first main surface side protective film removing step (step S9) correspond to a wafer processing step in which semiconductor elements are formed by processing the semiconductor wafer while the semiconductor wafer is housed in the transfer container 100. In addition, in the second to fourth embodiments described below, the method for manufacturing semiconductor elements is the same as in the first embodiment, and therefore description thereof will be omitted.

[0044] <Effects> As described above, in the first embodiment, the transport container 100 includes a housing 104 having an opening 104a through which the semiconductor wafers 106, 107, and 108 can be loaded and unloaded from the Y direction, a pair of thresholds 101 arranged within the housing 104 and supporting the back surfaces of the peripheral edges of the semiconductor wafers 106, 107, and 108 in the -X direction intersecting the Y direction and the X direction opposite to the -X direction, a lid 105 capable of opening and closing the opening 104a, and a retainer 110 fixed to the inner surface of the lid 105 and holding the edge surfaces of the semiconductor wafers 106, 107, and 108 in the Y direction. Retainer 110 has a fixed portion 111 fixed to the inner surface of lid 105, and left and right wing portions 112a and 112b that extend from fixed portion 111 to the left and right, respectively, and have elastic force, and left and right wing portions 112a and 112b hold the edge surfaces of semiconductor wafers 106, 107, and 108 by their elastic force.

[0045] Therefore, with the backsides of the peripheral edges of semiconductor wafers 106, 107, and 108 supported by pair of thresholds 101, semiconductor wafers 106, 107, and 108 are held by applying force toward center O of semiconductor wafers 106, 107, and 108 with left wing portion 112a and right wing portion 112b, whereby thinned semiconductor wafers 107, 108 and semiconductor wafers 107, 108 with small diameters can also be held by applying force toward center O of semiconductor wafers 106, 107, and 108. Thus, thinned semiconductor wafers 107, 108 and semiconductor wafers 106, 107, and 108 with different diameters can be held uniformly.

[0046] An angle 113 formed between a perpendicular line extending from the center O of the semiconductor wafers 106, 107, 108 to the fixing portion 111 and a line extending from the contact point where the retainer 110 and the semiconductor wafers 106, 107, 108 are in contact toward the center O of the semiconductor wafers 106, 107, 108 is 80 degrees or less.

[0047] Therefore, even if the semiconductor wafers 106, 107, and 108 have different diameters, simply by changing the positions of the two points where the semiconductor wafers 106, 107, and 108 contact the retainer 110, a uniform holding force can be applied to the semiconductor wafers 106, 107, and 108.

[0048] An angle 113 formed between a perpendicular line extending from the center O of semiconductor wafers 106, 107, and 108 to fixing portion 111 and a line extending from the contact point where retainer 110 and semiconductor wafers 106, 107, and 108 meet toward center O of semiconductor wafers 106, 107, and 108 is 45 degrees. Left wing portion 112a and right wing portion 112b hold semiconductor wafers 106, 107, and 108 by point contact.

[0049] Therefore, the retainer 110 can hold the semiconductor wafers 106, 107, and 108 evenly in the direction of the center O, so that the semiconductor wafers 106, 107, and 108 can be kept in the correct positions.

[0050] Furthermore, because retainer 110 is detachable from lid 105, it is possible to select and replace retainer 110 that holds semiconductor wafers 106, 107, and 108 of different diameters with a more appropriate force. However, if fixed portion 111 and left and right wing portions 112a and 112b are integral, the entire retainer 110 is replaced, but if they are separate, it is also possible to replace only left and right wing portions 112a and 112b. Furthermore, if the semiconductor material of semiconductor wafers 106, 107, and 108 is hard SiC, there is also the effect that retainer 110 can be easily replaced when it deteriorates due to friction with semiconductor wafers 106, 107, and 108.

[0051] Furthermore, the holding force when holding semiconductor wafers 106, 107, 108 by left wing portion 112a and right wing portion 112b is greater than 0 N and equal to or less than 2 N. Therefore, deformation or cracking of semiconductor wafers 106, 107, 108 can be prevented when semiconductor wafers 106, 107, 108 are stored.

[0052] The method for manufacturing semiconductor elements also includes a wafer preparation process in which the semiconductor wafers 106, 107, and 108 are placed on the pair of thresholds 101, and then the lid 105 is closed and the retainer 110 holds the end faces of the semiconductor wafers 106, 107, and 108, thereby storing the semiconductor wafers 106, 107, and 108 in the transport container 100; and a wafer processing process in which, while the semiconductor wafers 106, 107, and 108 are stored in the transport container 100, the semiconductor wafers 106, 107, and 108 are processed to form semiconductor elements.

[0053] Therefore, in the manufacturing process of semiconductor devices, the transfer container 100 can hold the thinned semiconductor wafers 107 and 108 and the semiconductor wafers 106, 107, and 108 with different diameters without deformation or cracking.

[0054] <Embodiment 2> Next, a description will be given of embodiment 2. Fig. 11 is an enlarged top view of a retainer 110 provided in a transfer container 100 according to embodiment 2. Note that in embodiment 2, the same components as those described in embodiment 1 are given the same reference numerals and descriptions thereof will be omitted.

[0055] 11, in the second embodiment, conductive cushion material 118 is provided on the surfaces of left wing portion 112a and right wing portion 112b that hold semiconductor wafers 106, 107, and 108. Note that a conductive coating (not shown) may be applied instead of cushion material 118. The configuration of the second embodiment can also be adopted in the third and fourth embodiments described below.

[0056] As described above, in the second embodiment, conductive cushion material 118 is provided on the surfaces of left wing portion 112a and right wing portion 112b that hold semiconductor wafers 106, 107, and 108, or a conductive coating is applied thereto.

[0057] Therefore, it is possible to suppress misalignment of the semiconductor wafers 106, 107, and 108 and mitigate contact damage when storing the semiconductor wafers 106, 107, and 108. Furthermore, by suppressing charging of the semiconductor wafers 106, 107, and 108, it is possible to suppress the effects of charging on semiconductor elements formed on the semiconductor wafers 106, 107, and 108.

[0058] <Third Embodiment> Next, a third embodiment will be described. Fig. 12 is a view of retainer 110 provided in transfer container 100 according to the third embodiment, viewed from the -Y direction. Fig. 13 is a cross-sectional view of left wing portion 112a of retainer 110 and its surrounding area. Note that in the third embodiment, the same components as those described in the first and second embodiments are given the same reference numerals, and description thereof will be omitted.

[0059] As described in the first embodiment, left wing 112a and right wing 112b are configured to be able to hold up to 25 semiconductor wafers 106, 107, and 108 arranged along the vertical direction (Z-axis direction). In the third embodiment, as shown in Figures 12 and 13, both left wing 112a and right wing 112b have a structure along the vertical direction (Z-axis direction) in which vertical portions 114a parallel to the vertical direction (Z-axis direction) and inclined portions 114b inclined toward the centers O of semiconductor wafers 106, 107, and 108 alternate.

[0060] The ratio of length 115 of vertical portion 114a to length 116 of inclined portion 114b can be set arbitrarily, but it is desirable that length 115 of vertical portion 114a be about 6 mm and length 116 of inclined portion 114b be about 4 mm, so that the total of length 115 of vertical portion 114a and length 116 of inclined portion 114b is 10 mm. In addition, inclination angle 117 of inclined portion 114b can also be set arbitrarily, but it is desirable that it be in the range of about 0 degrees or more and 4 degrees or less.

[0061] As described above, in Embodiment 3, left wing portion 112a and right wing portion 112b hold multiple semiconductor wafers 106, 107, and 108 arranged in the vertical direction (Z-axis direction). Both left wing portion 112a and right wing portion 112b have a structure in which vertical portion 114a and inclined portion 114b that incline toward center O of semiconductor wafers 106, 107, and 108 with respect to vertical portion 114a are repeated in the vertical direction (Z-axis direction).

[0062] Therefore, even if the semiconductor wafers 106, 107, and 108 are warped, the end faces of the semiconductor wafers 106, 107, and 108 can be supported at either the vertical portion 114a or the inclined portion 114b, and deformation or cracking of the thinned, fragile semiconductor wafers 107 and 108 can be prevented.

[0063] <Fourth Embodiment> Next, a fourth embodiment will be described. Fig. 14 is a view of a retainer 110 provided in a transfer container 100 according to the fourth embodiment, viewed from the -Y direction. Note that in the fourth embodiment, the same components as those described in the first to third embodiments are given the same reference numerals, and the description thereof will be omitted.

[0064] 14, in the fourth embodiment, retainer 110 has a plurality of left wing portions 112a and right wing portions 112b arranged along the vertical direction (Z-axis direction). Specifically, 25 left wing portions 112a and 25 right wing portions 112b are arranged along the vertical direction (Z-axis direction). Each left wing portion 112a and each right wing portion 112b holds one semiconductor wafer, and gap 120 between left wing portion 112a and adjacent left wing portion 112a and gap 121 between right wing portion 112b and adjacent right wing portion 112b do not overlap in side view.

[0065] Length 122 of left wing 112a and right wing 112b and the lengths of gaps 120, 121 can be set arbitrarily, but length 122 of left wing 112a and right wing 112b is preferably greater than 9.5 mm and less than 10 mm. Furthermore, the lengths of gaps 120, 121 are preferably greater than 0 mm and less than 0.5 mm. Furthermore, the sum of length 122 of left wing 112a and right wing 112b and the lengths of gaps 120, 121 is set to 10 mm.

[0066] As described above, in embodiment 4, retainer 110 has multiple left wing portions 112a and right wing portions 112b arranged along the vertical direction (Z-axis direction), and each left wing portion 112a and each right wing portion 112b holds one semiconductor wafer, and gap 120 between left wing portion 112a and adjacent left wing portion 112a and gap 121 between right wing portion 112b and adjacent right wing portion 112b do not overlap in side view.

[0067] Therefore, by holding the semiconductor wafers one by one, even if semiconductor wafers 106, 107, and 108 with different diameters are mixed, each semiconductor wafer can be held. Also, by making the left and right gaps 120 and 121 not overlap in side view, it is possible to prevent the thinned semiconductor wafers 107 and 108 from being caught in the gaps 120 and 121.

[0068] It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate.

[0069] Various aspects of the present disclosure are summarized below as appendices.

[0070] (Appendix 1) a housing having an opening through which a semiconductor wafer can be inserted and removed from a first direction; a pair of thresholds disposed within the housing and configured to support the rear surface of the peripheral edge of the semiconductor wafer in a second direction intersecting the first direction and a third direction opposite to the second direction; a lid that can open and close the opening; a retainer fixed to the inner surface of the lid and configured to hold the edge of the semiconductor wafer in the first direction; the retainer has a fixed portion fixed to the inner surface of the lid, and a left wing portion and a right wing portion extending laterally from the fixed portion, respectively, and having elasticity; The left and right wing portions hold the edge surface of the semiconductor wafer by the elastic force.

[0071] (Appendix 2) 2. A semiconductor wafer transport container according to claim 1, wherein the angle between a perpendicular line extending from the center of the semiconductor wafer to the fixing portion and a line extending from the contact point between the retainer and the semiconductor wafer toward the center of the semiconductor wafer is 80 degrees or less.

[0072] (Appendix 3) the angle between the perpendicular line extending from the center of the semiconductor wafer to the fixing portion and the line extending from the contact point where the retainer and the semiconductor wafer are in contact toward the center of the semiconductor wafer is 45 degrees; 3. The semiconductor wafer transport container according to claim 2, wherein the left wing portion and the right wing portion hold the semiconductor wafer by point contact.

[0073] (Appendix 4) 4. The semiconductor wafer transport container according to claim 1, wherein the retainer is detachable from the lid.

[0074] (Appendix 5) 5. A semiconductor wafer transport container according to claim 1, wherein the holding force of the left wing portion and the right wing portion when holding the semiconductor wafer is greater than 0 N and not more than 2 N.

[0075] (Appendix 6) A semiconductor wafer transport container according to any one of appendices 1 to 5, wherein the surfaces of the left wing portion and the right wing portion that hold the semiconductor wafer are provided with a conductive cushioning material or coated with the conductive coating.

[0076] (Appendix 7) the left wing portion and the right wing portion hold a plurality of the semiconductor wafers arranged along the vertical direction, A semiconductor wafer transport container according to any one of appendices 1 to 6, wherein both the left wing portion and the right wing portion have a structure in which vertical portions and inclined portions that are inclined toward the center of the semiconductor wafer relative to the vertical portions are alternated along the up-down direction.

[0077] (Appendix 8) the retainer has a plurality of the left wing portions and the right wing portions provided along the up-down direction, Each of the left wing portions and each of the right wing portions holds one semiconductor wafer; A semiconductor wafer transport container according to any one of appendices 1 to 6, wherein the gap between the left wing portion and another adjacent left wing portion and the gap between the right wing portion and another adjacent right wing portion do not overlap in side view.

[0078] (Appendix 9) A method for manufacturing semiconductor devices using a semiconductor wafer transport container according to any one of Supplementary Note 1 to Supplementary Note 8, comprising: a wafer preparation step of placing the semiconductor wafer on the pair of thresholds, closing the lid, and holding the end surfaces of the semiconductor wafer with the retainer, thereby storing the semiconductor wafer in the transport container; a wafer processing step of processing the semiconductor wafer to form the semiconductor element while the semiconductor wafer is housed in the transport container; A method for manufacturing a semiconductor device, comprising: [Explanation of symbols]

[0079] 100 transport container, 101 threshold, 104 housing, 104a opening, 105 lid, 106, 107, 108 semiconductor wafer, 110 retainer, 111 fixing portion, 112a left wing portion, 112b right wing portion, 113 angle, 114a vertical portion, 114b inclined portion, 118 cushion material.

Claims

1. a housing having an opening through which a semiconductor wafer can be inserted and removed from a first direction; a pair of thresholds disposed within the housing and configured to support the rear surface of the peripheral edge of the semiconductor wafer in a second direction intersecting the first direction and a third direction opposite to the second direction; a lid that can open and close the opening; a retainer fixed to the inner surface of the lid and configured to hold the edge of the semiconductor wafer in the first direction, the retainer has a fixed portion fixed to the inner surface of the lid, and a left wing portion and a right wing portion extending laterally from the fixed portion, respectively, and having elasticity; The left and right wing portions hold the edge surface of the semiconductor wafer by the elastic force.

2. 2. The semiconductor wafer transport container according to claim 1, wherein an angle formed between a perpendicular line extending from the center of the semiconductor wafer to the fixing portion and a line extending from a contact point between the retainer and the semiconductor wafer toward the center of the semiconductor wafer is 80 degrees or less.

3. the angle between the perpendicular line extending from the center of the semiconductor wafer to the fixing portion and the line extending from the contact point where the retainer and the semiconductor wafer are in contact toward the center of the semiconductor wafer is 45 degrees; 3. The semiconductor wafer transport container according to claim 2, wherein said left wing portion and said right wing portion hold said semiconductor wafer by point contact.

4. 2. The semiconductor wafer transport container according to claim 1, wherein said retainer is detachable from said lid.

5. 2. The semiconductor wafer transport container according to claim 1, wherein the holding force of said left wing portion and said right wing portion when holding said semiconductor wafer is greater than 0N and equal to or less than 2N.

6. 2. The semiconductor wafer transport container according to claim 1, wherein the surfaces of the left wing portion and the right wing portion that hold the semiconductor wafer are provided with a conductive cushioning material or coated with the conductive coating.

7. the left wing portion and the right wing portion hold a plurality of the semiconductor wafers arranged along the vertical direction, 2. The semiconductor wafer transport container according to claim 1, wherein both the left wing portion and the right wing portion have a structure in which vertical portions and inclined portions inclined toward the center of the semiconductor wafer relative to the vertical portions alternate along the up-down direction.

8. the retainer has a plurality of the left wing portions and the right wing portions provided along the up-down direction, Each of the left wing portion and each of the right wing portion holds one semiconductor wafer; 2. The semiconductor wafer transport container according to claim 1, wherein a gap between the left wing portion and another adjacent left wing portion and a gap between the right wing portion and another adjacent right wing portion do not overlap in side view.

9. A method for manufacturing semiconductor devices using the semiconductor wafer transport container according to any one of claims 1 to 8, comprising: a wafer preparation step of placing the semiconductor wafer on the pair of thresholds, closing the lid, and holding the end surfaces of the semiconductor wafer with the retainer, thereby storing the semiconductor wafer in the transport container; a wafer processing step of processing the semiconductor wafer to form the semiconductor element while the semiconductor wafer is housed in the transport container; A method for manufacturing a semiconductor device, comprising:

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