Substrate treatment apparatus, gas supply mechanism, and gas supply method

Abstract

To provide a substrate treatment apparatus that improves temperature controllability of a raw material tank in the case of forming a film on a substrate by using raw material gas.SOLUTION: A substrate treatment apparatus comprises: a treatment vessel which is constituted to be capable of being depressurized; a mounting table on which a substrate is mounted; and a gas supply mechanism which supplies raw material gas of the film to the treatment vessel, where the gas supply mechanism has: an inner housing container which houses a raw material tank storing a liquid or solid raw material; an outer housing container which houses the inner housing container and isolates the inner housing container from an outer space; an exhaust mechanism which exhausts the inside of the outer housing container: a temperature control mechanism which controls temperature such that the raw material tank is maintained at a predetermined temperature; and a supply pipe which connects the raw material tank and the treatment vessel such that raw material gas created in the raw material tank is supplied to the treatment vessel, and the temperature control mechanism has a heating part heating the raw material tank and the cooling part cooling the raw material tank, and the cooling part has a heat absorbing part which is provided in the inner housing container and absorbs heat of the raw material tank, and a heat radiation part which radiates the heat of the raw material tank.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a gas supply mechanism, and a gas supply method. [Background technology]

[0002] Patent Document 1 discloses a film formation apparatus for forming a manganese film on the surface of a semiconductor wafer by chemical vapor deposition (CVD). This film formation apparatus includes a processing vessel capable of being evacuated, a stage provided within the processing vessel for placing the semiconductor wafer thereon, and a source gas supply means for supplying a source gas containing an organometallic material or a metal complex material containing manganese into the processing vessel. The source gas supply means has a source tank for storing a manganese-containing source material. The source tank is provided with a bubbling mechanism. The bubbling mechanism has a bubbling pipe, and the bubbling pipe bubbling a carrier gas into the source material in the source tank while controlling the flow rate, vaporizing the source material and transporting it together with the carrier gas. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-308789 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure improves the controllability of the temperature of a source tank when a film is formed on a substrate using a source gas generated by vaporizing a source material in the source tank. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus for forming a film on a substrate, the apparatus comprising: a processing vessel configured to be depressurized; a mounting table provided within the processing vessel on which the substrate is placed; and a gas supply mechanism for supplying a source gas of the film to the processing vessel, the gas supply mechanism including an inner container for accommodating a source tank storing a liquid or solid source of the film; an outer container for accommodating the inner container and isolating the inner container from an external space; an exhaust mechanism for exhausting the inside of the outer container; and a gas supply mechanism for maintaining the source tank at a predetermined temperature. The inner storage container includes a temperature control mechanism that adjusts the temperature of a raw material tank, and a supply pipe that connects the raw material tank and the processing vessel so that the raw material gas generated by vaporization in the raw material tank is supplied to the processing vessel. The temperature control mechanism includes a heating unit that heats the raw material tank, and a cooling unit that cools the raw material tank. The cooling unit includes a heat absorption unit that is provided within the inner storage container and absorbs heat from the raw material tank, and a heat radiation unit that is provided outside the inner storage container and within the outer storage container and radiates the heat of the raw material tank absorbed by the heat absorption unit. [Effects of the Invention]

[0006] According to the present disclosure, when a film is formed on a substrate using a source gas generated by vaporizing a source material in a source tank, it is possible to improve the controllability of the temperature of the source tank. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a diagram schematically illustrating an outline of the configuration of a film forming apparatus as a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] FIG. [Figure 3] 10A and 10B are diagrams illustrating other examples of the positions at which the heat sinks are disposed. DETAILED DESCRIPTION OF THE INVENTION

[0008] The configuration of the substrate processing apparatus and gas supply mechanism according to this embodiment will be described below with reference to the drawings. In this specification, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0009] <Film forming equipment> 1 is a diagram schematically illustrating the configuration of a film forming apparatus as a substrate processing apparatus according to this embodiment, and FIG. 2 is a perspective view of a heat sink, which will be described later.

[0010] The film forming apparatus 1 in FIG. 1 forms a film on a semiconductor wafer (hereinafter referred to as "wafer") W as a substrate. Specifically, the film forming apparatus 1 forms a film on the wafer W using a source gas generated from a liquid source of the film. The film is formed on the wafer W in the film forming apparatus 1 by, for example, CVD or ALD (Atomic Layer Deposition). The film formed by the film forming apparatus 1 is, for example, titanium nitride, and the liquid source is, for example, titanium chloride. The film forming apparatus 1 includes a processing chamber 10, a mounting table 20, a gas introduction unit 30, and a gas supply mechanism 40.

[0011] The processing chamber 10 is configured to be depressurizable and accommodates the wafer W therein. An exhaust mechanism 11 is connected to the bottom of the processing vessel 10 to reduce the pressure in the processing space above the mounting table 20 within the processing vessel 10. The exhaust mechanism 11 includes, for example, an APC valve (not shown) and a vacuum pump (not shown). The vacuum pump may include a rotary pump as a roughing pump, a turbomolecular pump, or a combination thereof. The exhaust mechanism 11 may also include an abatement unit (not shown) that removes harmful components from the gas discharged from the processing vessel 10.

[0012] The mounting table 20 is provided in the processing chamber 10, and the wafer W is placed thereon. Specifically, the mounting table 20 horizontally supports the wafer W. The mounting table 20 may be provided with a heater for heating the wafer W, a cooling mechanism for cooling the wafer W, or a combination thereof.

[0013] The gas introduction unit 30 introduces the source gas supplied from the gas supply mechanism 40 into the processing space. The film forming apparatus 1 may be configured to be able to introduce gases other than the source gas (for example, a reactive gas such as a reducing gas that reacts with the source gas, an inert gas, or a combination thereof) into the processing space from the gas introduction unit 30.

[0014] The gas supply mechanism 40 supplies raw material gases for the film to be formed on the wafer W. The gas supply mechanism 40 includes a supply pipe 41 , an inner container 42 , an outer container 43 , and a temperature adjustment mechanism 44 .

[0015] The supply pipe 41 connects the raw material tank T and the processing vessel 10 so that the raw material gas generated by vaporization in the raw material tank T storing the liquid raw material for the film is supplied to the processing vessel 10. The supply pipe 41 is installed, for example, to penetrate the inner storage vessel 42 and the outer storage vessel 43 so that the raw material tank T, which is covered with the inner storage vessel 42 together with the outer storage vessel 43, and the processing vessel 10 are connected.

[0016] An on-off valve 51, a mass flow controller (MFC) 52, and an on-off valve 53 are provided in the supply pipe 41 in this order from the source tank T. The on-off valves 51 and 53 are used to start and stop the supply of the source gas from the source tank T to the processing vessel 10 via the supply pipe 41. The flow control valve 52 controls the supply flow rate (mass flow rate) of the source gas from the source tank T to the processing vessel 10 to a set flow rate. The on-off valves 51 and 53 and the flow control valve 52 are provided, for example, in a space outside the inner storage vessel 42 and inside the outer storage vessel 43.

[0017] The inner storage container 42 accommodates a raw material tank T. A supply pipe 61 may be connected to the inner storage container 42. The supply pipe 61 connects an inert gas supply source SN and the inner storage container 42 so that an inert gas such as nitrogen gas is supplied to the inner storage container 42. A flow control valve 62 and an on-off valve 63 are installed in the supply pipe 61, in this order from the supply source SN side. The on-off valve 63 is used to switch on / off the supply of the inert gas from the supply source SN to the inner storage container 42 via the supply pipe 61. In addition, the flow control valve 62 controls the supply flow rate (mass flow rate) of the inert gas from the inert gas supply source SN to the inner storage container 42 to a set flow rate.

[0018] The supply pipe 61, the flow control valve 62, and the on-off valve 63 constitute at least a part of a purge mechanism that uses an inert gas to purge the inside of the inner storage container 42. Purging the inside of the inner storage container 42 with an inert gas can prevent oxygen in the air inside the inner storage container 42 from reacting and igniting.

[0019] When the inert gas supply pipe 61 is connected to the inner housing container 42, a discharge pipe 64 may also be connected to the inner housing container 42. The discharge pipe 64 is for discharging the inert gas in the inner housing container 42 to the outside of the inner housing container 42, specifically, for discharging the inert gas to an exhaust line provided outside the film forming apparatus 1 in a factory where the film forming apparatus 1 is installed. At least a portion of the discharge pipe 64 is located outside the inner housing container 42 and inside the outer housing container 43. One end of the discharge pipe 64 is connected to the inner housing container 42, and the inert gas in the inner housing container 42 is introduced into the discharge pipe 64 from this end. Meanwhile, the other end of the discharge pipe 64 is located near an exhaust port 43a (described later) of the outer housing container 43, and discharges the inert gas in the discharge pipe 64 to the periphery of the exhaust port 43a or into the exhaust port 43a. As a result, the inert gas in the discharge pipe 64 is discharged to the exhaust line via the exhaust port 43a. The other end of the exhaust pipe 64 may be located inside the exhaust port 43a or inside an exhaust pipe 71 (described below) connected to the exhaust port 43a. The exhaust pipe 64 may be provided with an on-off valve (not shown) that switches between on and off exhaust from the inside of the inner container 42 via the exhaust pipe 64 .

[0020] By providing the exhaust pipe 64 to exhaust the gas (specifically, the inert gas) in the inner storage container 42 to the exhaust line of the factory, even if the raw material gas leaks from the raw material tank T, the leaked raw material gas is also exhausted to the exhaust line of the factory. Therefore, it is possible to prevent the raw material gas leaking from the raw material tank T from adversely affecting workers around the raw material tank T.

[0021] The outer storage container 43 accommodates the inner storage container 42 and isolates the inner storage container 42 from the external space. An exhaust mechanism 70 that exhausts the interior of the outer storage container 43 is connected to the outer storage container 43. Specifically, an exhaust port 43a is provided in the outer storage container 43, and an exhaust pipe 71 of the exhaust mechanism 70 that exhausts the space outside the inner storage container 42 and inside the outer storage container 43 is connected to the exhaust port 43a. An exhaust pipe 71 of the exhaust mechanism 70 connects an exhaust pump 72 such as an ejector of an exhaust line of a factory where the film forming apparatus 1 is installed to the exhaust port 43a. The exhaust pipe 71 may be provided with an on-off valve (not shown) that switches between on and off exhaust from the inside of the outer container 43 via the exhaust pipe 71 .

[0022] By providing the outer storage container 43 and the exhaust mechanism 70, even if gas inside the inner storage container 42, such as an inert gas containing raw material gas, leaks from the inner storage container 42, it can be exhausted to the exhaust line of the factory. Therefore, it is possible to prevent the gas containing raw material gas leaking from the inner storage container 42 from adversely affecting workers around the inner storage container 42.

[0023] The exhaust port 43a to which the exhaust pipe 71 is connected is provided, for example, in the upper part of the outer container 43, more specifically, in the ceiling. The exhaust mechanism 70 and the exhaust mechanism 11 are separate mechanisms.

[0024] Furthermore, by providing the exhaust mechanism 70, an airflow can be formed outside the inner container 42 and inside the outer container 43. This airflow is used, for example, to efficiently dissipate heat from a heat sink 82b, which will be described later.

[0025] In order to ensure a certain amount of airflow within the outer container 43, the outer container 43 may be provided with an air inlet 43b. The air supply port 43b is provided, for example, in the lower part of the outer storage container 43, specifically, in the lower part of the side wall of the outer storage container 43. The air supply port 43b is, for example, an intake port that takes in the ambient atmosphere of the film forming apparatus 1 (specifically, the ambient atmosphere of the outer storage container 43) into the outer storage container 43. A louver (not shown) may be provided in the air supply port 43b for the purpose of blocking the intake of the ambient atmosphere through the air supply port 43b, etc.

[0026] The temperature adjustment mechanism 44 adjusts the temperature of the raw material tank T so that the raw material tank T is maintained at a predetermined temperature. The predetermined temperature is, for example, 40°C to 100°C, which is slightly higher than room temperature. The temperature adjustment mechanism 44 includes a heating unit 81 that heats the raw material tank T and a cooling unit 82 that cools the raw material tank T.

[0027] The heating unit 81 is provided in the inner container 42 and has, for example, a built-in resistance heater. The heating unit 81 heats, for example, the four side surfaces of the rectangular parallelepiped raw material tank T. When a heat absorption unit 82a (described later) of the cooling unit 82 absorbs heat from one of the four side surfaces of the raw material tank T, the heating unit 81 heats that side surface through the heat absorption unit 82a.

[0028] The cooling section 82 has a heat absorption section 82a that absorbs heat from the raw material tank T, and a heat sink 82b that constitutes a heat dissipation section that dissipates the heat from the raw material tank T absorbed by the heat absorption section 82a.

[0029] The heat absorption part 82a is provided inside the inner storage container 42. For example, the heat absorption part 82a is formed in a plate shape and is provided so as to be in contact with one of the four side surfaces of the raw material tank T, and absorbs heat from the raw material tank T from that side surface.

[0030] The heat sink 82b is provided outside the inner accommodating container 42 and inside the outer accommodating container 43. Specifically, the heat sink 82b is provided at a position overlapping with the exhaust port 43a in a plan view inside the outer accommodating container 43. Alternatively, the heat sink 82b may be provided at a position overlapping with the exhaust port 43a in a plan view and closer to the outer accommodating container 43 than to the inner accommodating container 42 (specifically, closer to the ceiling of the outer accommodating container 43 than to the ceiling of the inner accommodating container 42).

[0031] 2, the heat sink 82b includes a flat base 82c and thin plate-like fins 82d as protrusions formed to protrude from the base 82c. For example, a plurality of fins 82d are provided. The shape of the protrusions provided on the heat sink 82b is not limited thereto and may be, for example, columnar.

[0032] 1, the cooling unit 82 has a heat pipe 82e that circulates the working fluid between the heat absorption unit 82a and the heat sink 82b. The heat absorption unit 82a vaporizes the liquid working fluid through heat exchange with the raw material tank T. The vaporized working fluid is guided to the heat sink 82b via the heat pipe 82e. The heat sink 82b condenses the gaseous working fluid through heat exchange with the ambient atmosphere of the heat sink 82b, thereby releasing the heat of the raw material tank T absorbed by the working fluid. The condensed and liquefied working fluid is returned to the heat absorption unit 82a via the heat pipe 82e.

[0033] The heat absorption portion 82a, the heat sink 82b, and the heat pipe 82e are each made of, for example, copper or an aluminum alloy, which has high thermal conductivity. The working fluid is, for example, chlorofluorocarbon, water, etc. The heat pipe 82e may be annular or tubular with both ends sealed.

[0034] The heat absorbing portion 82a and the heat sink 82b are connected via a heat pipe 82e, and the heat absorbing portion 82a is placed below the heat sink 82b. The heat pipe 82e is provided to pass through the inner container 42 so as to connect the heat absorbing portion 82a inside the inner container 42 to the heat sink 82b outside the inner container 42.

[0035] The above-described film forming apparatus 1 includes at least one controller M. The controller M processes computer-executable instructions that cause the film forming apparatus 1 to perform the various processes described herein. The controller M may be configured to control each element of the film forming apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller M may be included in the film forming apparatus 1. The controller M may include a processor, a storage unit, and a communication interface. The controller M may be implemented, for example, by a computer. The processor may be configured to read from the storage unit a program that provides logic or routines that enable the various control operations and execute the read program to perform the various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processor for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processor may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the film forming apparatus 1 via a communication line such as a LAN (Local Area Network).

[0036] <Film formation process> An example of a film formation process using the film formation apparatus 1, including a source gas supplying step, will be described. In the film forming process, the liquid raw material stored in the raw material tank T is vaporized to generate raw material gas. During the generation of the raw material gas, under the control of the control unit M, the exhaust mechanism 70 exhausts the inside of the outer storage container 43, which accommodates the inner storage container 42 that accommodates the raw material tank T. Also, during the generation of the raw material gas, under the control of the control unit M, the temperature adjustment mechanism 44 adjusts the temperature of the raw material tank T so that the raw material tank T is maintained at a predetermined temperature.

[0037] In regulating the temperature of the raw material tank T, the heating unit 81 heats the raw material tank T under the control of the control unit M so that the raw material tank T is maintained at a predetermined temperature. To enable such heating, a temperature sensor (not shown) is provided to measure the temperature of the raw material tank T, and the measurement result from the temperature sensor is output to the control unit M. In regulating the temperature of the raw material tank T, the cooling unit 82 cools the raw material tank T without the control of the control unit M. In cooling the raw material tank T, the heat of the raw material tank T is absorbed by the heat absorption unit 82a provided in the inner container 42, and the heat of the raw material tank T absorbed by the heat absorption unit 82a is released from the heat sink 82b provided outside the inner container 42 and in the outer container 43.

[0038] As a result of the temperature control of the source gas tank T, the source gas having a desired concentration is generated in the source gas tank T and supplied to the processing chamber 10 via the supply pipe 41 .

[0039] When the source gas is supplied to the processing chamber 10, the source material of the film is adsorbed onto the surface of the wafer W placed on the mounting table 20, and thus a desired film is formed on the surface of the wafer W.

[0040] <Major Effects of This Embodiment> As described above, the gas supply mechanism 40 according to this embodiment includes the inner container 42 that accommodates the raw material tank T, which stores a liquid raw material; the outer container 43 that accommodates the inner container 42 and isolates the inner container 42 from the outside; the exhaust mechanism 70 that exhausts the inside of the outer container 43; and the temperature control mechanism 44 that adjusts the temperature of the raw material tank T so that the raw material tank T is maintained at a predetermined temperature. The temperature control mechanism 44 includes a heating unit 81 that heats the raw material tank T and a cooling unit 82 that cools the raw material tank T. That is, this embodiment both heats and cools the raw material tank T. Therefore, this embodiment can improve the temperature controllability of the raw material tank T compared to a configuration that only heats or cools the raw material tank T. Furthermore, because the raw material tank T is heated, the temperature of the raw material tank T can reach the predetermined temperature, i.e., the set temperature of the raw material tank T, even if the set temperature is higher than the ambient temperature of the raw material tank T. Furthermore, since the raw material tank T is not only heated but also cooled, when the set temperature of the raw material tank T is higher than but close to the temperature of the ambient atmosphere around the raw material tank (specifically, when the set temperature is between 40°C and 100°C), if the temperature of the raw material tank T exceeds the set temperature due to heating by the heating section 81, it can be quickly returned to the set temperature.

[0041] In this embodiment, the cooling unit 82 includes a heat absorption unit 82a that absorbs heat from the raw material tank T and a heat sink 82b that serves as a heat dissipation unit that dissipates the heat from the raw material tank T absorbed by the heat absorption unit 82a. The heat absorption unit 82a is provided within the inner container 42, specifically, is provided within the inner container 42 so as to be in contact with the raw material tank T. This allows the heat from the raw material tank T to be efficiently absorbed by the heat absorption unit 82a. The heat sink 82b is provided outside the inner container 42 and within the outer container 43. That is, the heat sink 82b is provided in a portion where an airflow is generated by the exhaust mechanism 70. This allows the heat from the raw material tank T absorbed by the heat absorption unit 82a to be efficiently dissipated from the heat sink 82b by the airflow. Therefore, the cooling unit 82, which includes the heat absorption unit 82a and the heat sink 82b, can efficiently cool the raw material tank T. Furthermore, if the heat sink 82b is provided inside the exhaust pipe 71, the cooling efficiency of the cooling section 82 will be reduced due to the influence of disturbances outside the film forming apparatus 1 and the increased connection distance between the heat absorption section 82a and the heat sink 82b.

[0042] Furthermore, in this embodiment, the cooling unit 82 is always performing cooling, so the output of the heating unit 81 can always be kept high. Therefore, when the output of the heating unit 81 is below a predetermined value, the control unit M may be unable to determine that the heating unit 81 is outputting even though it is, and may erroneously determine that the heating unit 81 is not outputting, but this can prevent the control unit M from erroneously determining that the heating unit 81 is not outputting.

[0043] Furthermore, in this embodiment, the heat dissipation section that dissipates the heat of the raw material tank T absorbed by the heat absorption section 82a is configured with a heat sink 82b having a convex portion. That is, the heat dissipation section is configured with the heat sink 82b having a shape for increasing the surface area. Therefore, according to this embodiment, the heat dissipation section can dissipate heat efficiently, and therefore, the cooling section 82 including the heat dissipation section (heat sink 82b) can efficiently perform cooling.

[0044] In this embodiment, the outer container 43 has an exhaust port 43a that communicates with the exhaust mechanism 70, and the heat sink 82b is provided at a position that overlaps with the exhaust port 43a in a plan view, i.e., at a position close to the exhaust port 43a. The airflow generated in the outer container 43 by the exhaust mechanism 70 concentrates at the position close to the exhaust port 43a, and therefore the flow rate of the airflow is high. By providing the heat sink 82b at such a position, heat can be efficiently dissipated from the heat sink 82b, and as a result, cooling by the cooling unit 82 can be efficiently performed.

[0045] As described above, the heat sink 82b may be provided at a position overlapping with the exhaust port 43a in plan view and closer to the outer casing 43 than to the inner casing 42. This allows heat to be dissipated from the heat sink 82b more efficiently.

[0046] Furthermore, in this embodiment, the cooling unit 82 includes a heat pipe 82e that circulates the working fluid between the heat absorption unit 82a and the heat sink 82b. The heat absorption unit 82a vaporizes the liquid working fluid through heat exchange with the raw material tank T, and the heat sink 82b condenses the gaseous working fluid through heat exchange with the ambient atmosphere around the heat sink 82b. A possible alternative to this embodiment is to water-cool the raw material tank T. However, this requires a water supply pipe to lead cooling water to the vicinity of the raw material tank T, which must be installed outside the outer container 43. This installation increases the overall footprint (occupied floor area) of the film forming apparatus 1, including the temperature control mechanism for the raw material tank T. In contrast, this embodiment does not require piping for cooling water, thereby suppressing an increase in the overall footprint (occupied floor area) of the film forming apparatus 1, including the temperature control mechanism 44.

[0047] Another possible comparative example that differs from this embodiment is one in which the raw material tank T is air-cooled. However, in this example, oxygen in the cooling air can cause fire within the inner storage container 42. In contrast, this embodiment can employ a configuration in which the inner storage container 42 is purged with an inert gas to remove oxygen from within the inner storage container 42, thereby preventing fire within the inner storage container 42. In the other comparative embodiments described above, it is necessary to install an air supply pipe to the outside of the outer container 43 in order to introduce cooling air to the vicinity of the raw material tank T. Installing the pipe in this manner increases the footprint (occupied floor area) of the entire film forming apparatus 1, including the temperature adjustment mechanism of the raw material tank T. In contrast, in the present embodiment, no piping for cooling air is required, and therefore it is possible to suppress an increase in the footprint (occupied floor area) of the entire film forming apparatus 1, including the temperature adjustment mechanism 44.

[0048] Furthermore, as another comparative embodiment different from this embodiment, it is possible to consider an embodiment in which the raw material tank T is cooled by an electrical device such as a Peltier element. However, in this embodiment, the electrical device and its associated parts may be a cause of fire. In contrast, in this embodiment, the raw material tank T can be cooled without using an electrical device, thereby preventing fire from breaking out inside the inner storage container 42. Furthermore, the Peltier element has room for improvement in terms of durability.

[0049] Furthermore, in this embodiment, the heat absorption unit 82a is installed below the heat sink 82b. Therefore, the working fluid condensed in the heat sink 82b can be efficiently returned to the heat absorption unit 82a via the heat pipe 82e. Therefore, cooling by the cooling unit 82 having the heat absorption unit 82a, the heat sink 82b, and the heat pipe 82e can be efficiently performed.

[0050] <Modification> In the above example, the heat sink 82b is provided at a position overlapping with the exhaust port 43a in a plan view, but it may also be provided at a position overlapping with the air intake port 43b in a plan view (i.e., a side view), i.e., at a position close to the air intake port 43b, as shown in Fig. 3. Even at a position close to the air intake port 43b, the airflow formed in the outer housing container 43 by the exhaust mechanism 70 concentrates. Therefore, by providing the heat sink 82b at such a position, heat can be efficiently dissipated from the heat sink 82b, and as a result, cooling by the cooling unit 82 can be efficiently performed. In this case, the heat sink 82b may be provided at a position overlapping the air inlet 43b in a plan view and closer to the outer accommodating container 43 than to the inner accommodating container 42. This allows heat to be dissipated from the heat sink 82b more efficiently. Furthermore, the heat sink 82b may be provided at both a position overlapping the exhaust port 43a in a plan view and a position overlapping the intake port 43b in a plan view.

[0051] The exhaust pipe 64 may be provided so that the inert gas used to purge the inner container 42 is discharged from the exhaust pipe 64 to the heat sink 82b. This allows heat to be dissipated from the heat sink 82b more efficiently.

[0052] In the above example, the heat absorption section 82a absorbs heat from only one of the four sides of the raw material tank T, but it may also absorb heat from two or more sides of the raw material tank T. However, a configuration in which heat is absorbed from only one side can reduce manufacturing costs.

[0053] Furthermore, in the above example, the raw material stored in the raw material tank T is a liquid, but it may be a solid, or a dispersion system in which a solid is dispersed in a liquid.

[0054] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0055] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that would be apparent to a person skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0056] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) A substrate processing apparatus for forming a film on a substrate, a processing container configured to be decompressible; a mounting table provided in the processing chamber and on which the substrate is placed; a gas supply mechanism for supplying a source gas of the film to the processing vessel; The gas supply mechanism includes: an inner container for accommodating a raw material tank storing a liquid or solid raw material for the membrane; an outer container that houses the inner container and isolates the inner container from an external space; an exhaust mechanism that exhausts the inside of the outer container; a temperature control mechanism that adjusts the temperature of the raw material tank so that the raw material tank is maintained at a predetermined temperature; a supply pipe connecting the raw material tank and the processing vessel so that the raw material gas vaporized and generated in the raw material tank is supplied to the processing vessel; the temperature adjustment mechanism includes a heating unit that heats the raw material tank and a cooling unit that cools the raw material tank, The cooling unit is a heat absorption part provided in the inner container and absorbing heat from the raw material tank; a heat dissipation unit provided outside the inner container and within the outer container, the heat dissipation unit dissipating heat from the raw material tank absorbed by the heat absorption unit. (2) The substrate processing apparatus according to (1), wherein the heat dissipation unit is a heat sink having a protrusion. (3) The outer container has an air inlet for supplying air into the outer container and an exhaust outlet communicating with the exhaust mechanism, The substrate processing apparatus according to (1) or (2), wherein the heat dissipation unit is installed at least one of a position overlapping the exhaust port in a plan view and a position overlapping the air inlet in a plan view. (4) The cooling unit has a heat pipe that circulates a working fluid between the heat absorption unit and the heat radiation unit, the heat absorption unit vaporizes the working fluid in a liquid state by heat exchange with the raw material tank, The substrate processing apparatus according to any one of (1) to (3), wherein the heat dissipation section condenses the working fluid in a gaseous state by heat exchange with a surrounding atmosphere. (5) The substrate processing apparatus according to (4), wherein the heat absorption section is disposed below the heat dissipation section. (6) A gas supply mechanism for supplying a source gas of a film to a processing vessel of a substrate processing apparatus for forming the film on a substrate, the mechanism comprising: an inner container for accommodating a raw material tank storing a liquid or solid raw material for the membrane; an outer container that houses the inner container and isolates the inner container from an external space; an exhaust mechanism that exhausts the inside of the outer container; a temperature control mechanism that adjusts the temperature of the raw material tank so that the raw material tank is maintained at a predetermined temperature; a supply pipe connecting the raw material tank and the processing vessel so that the raw material gas vaporized and generated in the raw material tank is supplied to the processing vessel; the temperature adjustment mechanism includes a heating unit that heats the raw material tank and a cooling unit that cools the raw material tank, The cooling unit is a heat absorption part provided in the inner container and absorbing heat from the raw material tank; a heat dissipation section that is provided outside the inner container and within the outer container and that dissipates heat from the energy material tank that has been absorbed by the heat absorption section. (7) A gas supply method for supplying a source gas of a film to a processing vessel of a substrate processing apparatus for forming the film on a substrate, the method comprising: a step of vaporizing a liquid or solid raw material of the membrane stored in a raw material tank to generate the raw material gas, The step of generating a raw material gas includes: a step of evacuating an outer container that houses an inner container that houses the raw material tank; adjusting the temperature of the raw material tank so that the raw material tank is maintained at a predetermined temperature; the step of adjusting the temperature includes a step of heating the raw material tank and a step of cooling the raw material tank; The cooling step includes: absorbing heat from the raw material tank by a heat absorption part provided in the inner container; and radiating the heat of the raw material tank absorbed by the heat absorption portion from a heat radiation portion provided outside the inner container and within the outer container. [Explanation of symbols]

[0057] 1 Film deposition equipment 10 Processing container 20 Mounting table 40 Gas supply mechanism 41 Supply pipe 42 Inner container 43 Outer containment vessel 44 Temperature control mechanism 70 Exhaust system 81 Heating section 82 Cooling section 82a Heat absorption part 82b Heatsink T Raw material tank W wafer

Claims

1. A substrate processing apparatus for forming a film on a substrate, a processing container configured to be decompressible; a mounting table provided in the processing chamber and on which the substrate is placed; a gas supply mechanism for supplying a source gas of the film to the processing vessel; The gas supply mechanism includes: an inner container for accommodating a raw material tank storing a liquid or solid raw material for the membrane; an outer container that houses the inner container and isolates the inner container from an external space; an exhaust mechanism that exhausts the inside of the outer container; a temperature control mechanism that adjusts the temperature of the raw material tank so that the raw material tank is maintained at a predetermined temperature; a supply pipe connecting the raw material tank and the processing vessel so that the raw material gas vaporized and generated in the raw material tank is supplied to the processing vessel; the temperature adjustment mechanism includes a heating unit that heats the raw material tank and a cooling unit that cools the raw material tank, The cooling unit is a heat absorption part provided in the inner container and absorbing heat from the raw material tank; a heat dissipation unit provided outside the inner container and within the outer container, the heat dissipation unit dissipating heat from the raw material tank absorbed by the heat absorption unit.

2. The substrate processing apparatus according to claim 1 , wherein the heat dissipation portion is a heat sink having a protrusion.

3. the outer container has an air inlet for supplying air into the outer container and an exhaust outlet communicating with the exhaust mechanism, The substrate processing apparatus according to claim 1 , wherein the heat dissipation unit is installed at least one of a position overlapping the exhaust port in a plan view and a position overlapping the air inlet in a plan view.

4. the cooling unit has a heat pipe that circulates a working fluid between the heat absorption unit and the heat radiation unit, the heat absorption unit vaporizes the working fluid in a liquid state by heat exchange with the raw material tank, 4. The substrate processing apparatus according to claim 1, wherein the heat dissipation section condenses the working fluid in a gaseous state by heat exchange with a surrounding atmosphere.

5. The substrate processing apparatus according to claim 4 , wherein the heat absorption section is disposed below the heat radiation section.

6. A gas supply mechanism for supplying a source gas of a film to a processing vessel of a substrate processing apparatus for forming a film on a substrate, the gas supply mechanism comprising: an inner container for accommodating a raw material tank storing a liquid or solid raw material for the membrane; an outer container that houses the inner container and isolates the inner container from an external space; an exhaust mechanism that exhausts the inside of the outer container; a temperature control mechanism that adjusts the temperature of the raw material tank so that the raw material tank is maintained at a predetermined temperature; a supply pipe connecting the raw material tank and the processing vessel so that the raw material gas vaporized and generated in the raw material tank is supplied to the processing vessel; the temperature adjustment mechanism includes a heating unit that heats the raw material tank and a cooling unit that cools the raw material tank, The cooling unit is a heat absorption part provided in the inner container and absorbing heat from the raw material tank; a heat dissipation section that is provided outside the inner container and within the outer container and that dissipates heat from the energy material tank that has been absorbed by the heat absorption section.

7. 1. A gas supply method for supplying a source gas of a film to a processing vessel of a substrate processing apparatus for forming a film on a substrate, the method comprising: a step of vaporizing a liquid or solid raw material of the membrane stored in a raw material tank to generate the raw material gas, The step of generating a raw material gas includes: a step of evacuating an outer container that houses an inner container that houses the raw material tank; adjusting the temperature of the raw material tank so that the raw material tank is maintained at a predetermined temperature; the step of adjusting the temperature includes a step of heating the raw material tank and a step of cooling the raw material tank; The cooling step includes: absorbing heat from the raw material tank by a heat absorption part provided in the inner container; and radiating the heat of the raw material tank absorbed by the heat absorption portion from a heat radiation portion provided outside the inner container and within the outer container.

Images