Plasma processing device and substrate processing method

Abstract

To provide a plasma processing device and a substrate processing method that suppress adhesion of a reaction product to a rectifying wall.SOLUTION: A plasma processing device for processing a substrate by plasma, includes: a plasma generator to which first high frequency power for generating the plasma is supplied; a mounting table having a mounting region for mounting the substrate on an upper surface thereof and to which second high frequency power for forming a bias on the mounting region is supplied; and a rectifying wall disposed to surround the mounting region and having an upper end located above the mounting region. The rectifying wall includes an insulating member having a recess or an inner cavity, and a conductive member disposed in the recess or the inner cavity.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus and a substrate processing method. [Background technology]

[0002] Patent document 1 describes a processing apparatus that includes a mounting table provided inside a processing vessel for placing an object to be processed on, a processing gas supply means for supplying a processing gas for processing the object to be processed from above the mounting table, a gas exhaust section for exhausting the atmosphere inside the processing vessel, and a straightening member provided to surround the object to be processed on the mounting table. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-10304 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a plasma processing apparatus and a substrate processing method that suppress adhesion of reaction products to a flow straightening wall. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, a plasma processing apparatus for processing a substrate with plasma is provided, comprising: a plasma generation unit to which a first high-frequency power for generating the plasma is supplied; a mounting table having a mounting area on its upper surface for placing the substrate and to which a second high-frequency power for forming a bias on the mounting area is supplied; and a rectifying wall arranged to surround the mounting area and whose upper end is above the mounting area, wherein the rectifying wall is composed of an insulating member having a recess or an internal cavity and a conductive member arranged in the recess or the internal cavity. [Effects of the Invention]

[0006] According to one aspect, the present disclosure can provide a plasma processing apparatus and a substrate processing method that suppress adhesion of reaction products to a flow-regulating wall. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a vertical cross-sectional view showing an example of a plasma processing apparatus. [Figure 2] 10 is an example of an enlarged cross-sectional view of a portion of the substrate placing table around a flow-regulating wall. [Figure 3] 1 is an example of a plan view seen from above the substrate placing table. [Figure 4] 10 is another example of a plan view seen from above the substrate placing table. [Figure 5] 10 is a cross-sectional view of an example of a flow straightening wall when an insulating cover member is added to the flow straightening wall. [Figure 6] 10 is a graph showing an example of a change in etching rate. [Figure 7] 10 is a graph showing an example of the state of the wall surface of a flow-regulating wall. [Figure 8] An example of a cross section of a flow-regulating wall. [Figure 9] 10 is a cross-sectional view of an example of a flow-regulating wall when a conductive member is inserted into a recess of an insulating member. [Figure 10] An example of a view of a flow-regulating wall from above. [Figure 11] FIG. 1 is a perspective view of a flow-regulating wall. [Figure 12] FIG. 1 is a perspective view of a flow-regulating wall. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Plasma processing equipment] The plasma processing apparatus 100 will be described with reference to Fig. 1. Fig. 1 is a vertical cross-sectional view showing an example of the plasma processing apparatus 100.

[0010] The plasma processing apparatus 100 shown in FIG. 1 is an inductively coupled plasma (ICP) processing apparatus that performs various substrate processing methods on a substrate G (hereinafter simply referred to as "substrate") that is rectangular in plan view for a flat panel display (hereinafter referred to as "FPD"). The substrate is primarily made of glass, although transparent synthetic resin may also be used depending on the application. Substrate processing includes etching and other processes. Examples of FPDs include liquid crystal displays (LCDs), electroluminescence (EL), and plasma display panels (PDPs). Substrates include those with circuits patterned on their surfaces as well as support substrates. Furthermore, the planar dimensions of FPD substrates have become larger with each generation, and the planar dimensions of the substrate G processed by the plasma processing apparatus 100 range at least from approximately 1500 mm × 1800 mm for the sixth generation to approximately 3000 mm × 3400 mm for the 10.5th generation. The thickness of the substrate G is approximately 0.2 mm to several mm.

[0011] 1 includes a processing vessel 20 having a rectangular box shape, a substrate mounting table (mounting table) 70 having a rectangular outer shape in a plan view that is disposed in the processing vessel 20 and on which a substrate G is mounted, and a control unit 90. The processing vessel 20 may have a cylindrical box shape or an elliptical cylindrical box shape, and in this configuration, the substrate mounting table also has a circular or elliptical shape, and the substrate mounted on the substrate mounting table also has a circular or elliptical shape.

[0012] Processing vessel 20 is divided into two spaces, upper and lower, by metal window 30, with antenna chamber A, which is the upper space, being formed by upper chamber 13, and processing chamber S, which is the lower space, being formed by lower chamber 17. In processing vessel 20, a rectangular ring-shaped support frame 14 is disposed at the boundary between upper chamber 13 and lower chamber 17 so as to protrude into the inside of processing vessel 20, and metal window 30 is attached to support frame 14.

[0013] An upper chamber 13 forming the antenna room A is formed by a side wall 11 and a top plate 12, and is made entirely of a metal such as aluminum or an aluminum alloy.

[0014] The lower chamber 17, which contains the processing chamber S, is formed by a sidewall 15 and a bottom plate 16, and is made entirely of a metal such as aluminum or an aluminum alloy. The sidewall 15 is grounded by a ground wire 21.

[0015] The support frame 14 is made of a metal such as conductive aluminum or an aluminum alloy, and can also be called a metal frame.

[0016] A rectangular annular (endless) seal groove 22 is formed at the upper end of the side wall 15 of the lower chamber 17, and a seal member 23 such as an O-ring is fitted into the seal groove 22, and the seal member 23 is held by the abutting surface of the support frame 14, thereby forming a seal structure between the lower chamber 17 and the support frame 14.

[0017] A loading / unloading port 15a is formed in the side wall 15 of the lower chamber 17 to load and unload the substrate G into and from the lower chamber 17, and the loading / unloading port 15a is configured to be freely opened and closed by a gate valve 24. A transfer chamber (neither of which is shown) containing a transfer mechanism is adjacent to the lower chamber 17, and the gate valve 24 is controlled to open and close, and the substrate G is loaded and unloaded by the transfer mechanism through the loading / unloading port 15a.

[0018] Furthermore, a plurality of exhaust ports 16a are provided in the bottom plate 16 of the lower chamber 17. Each exhaust port 16a is connected to an exhaust device 300 via an exhaust flow path 301a. A pressure gauge (not shown) is installed at an appropriate position in the lower chamber 17, and information monitored by the pressure gauge is sent to the control unit 90.

[0019] The substrate mounting table 70 includes a base material 71 and an electrostatic chuck 76 formed on an upper surface 71 a of the base material 71 .

[0020] The base material 71 has a rectangular shape in a plan view, and has planar dimensions similar to those of the substrate G placed on the substrate mounting table 70. The length of the long side of the base material 71 can be set to about 1800 mm to 3400 mm, and the length of the short side can be set to about 1500 mm to 3000 mm. With respect to these planar dimensions, the thickness of the base material 71 can be, for example, about 50 mm to 100 mm.

[0021] The base material 71 is provided with a temperature control medium flow path 72a that snakes so as to cover the entire area of ​​the rectangular plane, and is made of stainless steel, aluminum, an aluminum alloy, or the like. The temperature control medium flow path 72a may also be provided in the electrostatic chuck 76. Furthermore, the base material 71 may not be made of a single member as in the illustrated example, but may be made of a laminate of two members made of aluminum, an aluminum alloy, or the like.

[0022] A box-shaped pedestal 78 made of an insulating material and having a step on the inside is fixed on the bottom plate 16 of the lower chamber 17, and the substrate mounting table 70 is placed on the step of the pedestal 78.

[0023] An electrostatic chuck 76 on which a substrate G is directly placed is formed on an upper surface 71a of the base material 71. The electrostatic chuck 76 has a ceramic layer 74, which is a dielectric coating formed by thermally spraying a ceramic such as alumina, and a conductive layer 75 (attraction electrode) that is embedded inside the ceramic layer 74 and has an electrostatic attraction function.

[0024] The conductive layer 75 is connected to a DC power supply 85 via a power supply line 84. When a switch (not shown) on the power supply line 84 is turned on by the control unit 90, a DC voltage is applied from the DC power supply 85 to the conductive layer 75, thereby generating a Coulomb force. Due to this Coulomb force, the substrate G is electrostatically attracted to the upper surface of the electrostatic chuck 76 and is held in a state where it is placed on the upper surface 71 a of the base material 71.

[0025] A temperature control medium flow path 72a is provided on a base material 71 that constitutes the substrate mounting table 70, and the temperature control medium flow path 72a is formed to meander so as to cover the entire area of ​​a rectangular plane. Both ends of the temperature control medium flow path 72a are connected to a feed pipe 72b through which the temperature control medium is supplied to the temperature control medium flow path 72a, and a return pipe 72c through which the temperature control medium that has been heated after flowing through the temperature control medium flow path 72a is discharged.

[0026] As shown in FIG. 1 , a feed flow path 87 and a return flow path 88 are connected to the feed pipe 72b and the return pipe 72c, respectively. The feed flow path 87 and the return flow path 88 are connected to a chiller 86. The chiller 86 includes a main body that controls the temperature and discharge flow rate of the temperature-controlling medium, and a pump that pumps the temperature-controlling medium (neither of which is shown). A refrigerant is used as the temperature-controlling medium, such as Galden (registered trademark) or Fluorinert (registered trademark). The illustrated temperature control method involves circulating a temperature-controlling medium through the substrate 71. However, the substrate 71 may have a built-in heater or the like, and temperature control may be performed using the heater, or temperature control may be performed using both the temperature-controlling medium and the heater. Instead of using a heater, temperature control involving heating may be performed by circulating a high-temperature temperature-controlling medium. The heater, which is a resistor, is made of tungsten, molybdenum, or a compound of one of these metals with alumina, titanium, or the like. In the illustrated example, the temperature control medium flow path 72a is formed in the base material 71, but for example, the electrostatic chuck 76 may have a temperature control medium flow path.

[0027] A temperature sensor (not shown), such as a thermocouple, is disposed on the base material 71, and monitor information from the temperature sensor is transmitted to the control unit 90 as needed. Then, based on the transmitted monitor information, the control unit 90 controls the temperatures of the base material 71 and the substrate G. More specifically, the control unit 90 adjusts the temperature and flow rate of the temperature control medium supplied from the chiller 86 to the feed flow path 87. Then, the temperature control medium whose temperature and flow rate have been adjusted is circulated through the temperature control medium flow path 72a, thereby controlling the temperature of the substrate mounting table 70. The temperature sensor, such as a thermocouple, may be disposed on the electrostatic chuck 76, for example.

[0028] A step is formed by the outer periphery of the electrostatic chuck 76 and the base 71 and the upper surface of the pedestal 78, and a rectangular frame-shaped shield ring 79 (shield member) is placed on this step. When the shield ring 79 is placed on the step, the upper surface of the shield ring 79 is set to be lower than the upper surface of the electrostatic chuck 76. The shield ring 79 is made of a ceramic material (insulating material) such as alumina. A rectifying wall 200 is provided on the upper surface of the shield ring 79 so as to surround the substrate G attracted to the electrostatic chuck 76. The upper end of the rectifying wall 200 is formed above the upper surface of the electrostatic chuck 76 (the surface on which the substrate G is placed, the substrate G placement area). The upper end of the rectifying wall 200 is formed above the upper surface of the substrate G placed on the electrostatic chuck 76. The rectifying wall 200 will be described later using FIGS. 2 to 4, etc.

[0029] A power supply member 80 is connected to the underside of the substrate 71. A power supply line 81 is connected to the lower end of the power supply member 80, and the power supply line 81 is connected to a high-frequency power supply 83, which serves as a bias power supply, via a matcher 82 that performs impedance matching. When high-frequency power (second high-frequency power), for example, of 3.2 MHz, is applied to the substrate mounting table 70 from the high-frequency power supply 83, an RF bias is generated, and ions generated by the high-frequency power supply 56, which serves as a plasma generation source (described below), can be attracted to the substrate G. Therefore, in the plasma etching process, both the etching rate and the etching selectivity can be improved. In this way, the substrate mounting table 70 forms a bias electrode that supports the substrate G and generates an RF bias. At this time, a portion of the lower chamber 17 that is at ground potential functions as a counter electrode of the bias electrode and forms a return circuit for the high-frequency power. The metal window 30 may also be configured as part of the return circuit for the high-frequency power. The metal window 30 is formed by a plurality of divided metal windows 31. The number of divided metal windows 31 that form the metal window 30 can be set to various numbers, such as 12 or 24.

[0030] The divided metal window 31 includes a conductor plate 32 and a shower plate 34. The divided metal window 31 also serves as a process gas outlet portion that discharges process gas into the process chamber S. Both the conductor plate 32 and the shower plate 34 are made of a non-magnetic, conductive, corrosion-resistant metal or a metal that has been subjected to a corrosion-resistant surface treatment, such as aluminum, an aluminum alloy, or stainless steel. Examples of the corrosion-resistant surface treatment include anodizing and ceramic spraying. In addition, the exposed surface 34a of the shower plate 34 facing the process chamber S may be subjected to a plasma-resistant coating by anodizing or ceramic spraying. The conductor plate 32 is grounded via a ground wire (not shown), and the shower plate 34 is also grounded via the conductor plates 32 that are joined together.

[0031] Each divided metal window 31 constituting the metal window 30 is suspended from the top plate 12 of the upper chamber 13 by a plurality of suspenders (not shown). A spacer (not shown) made of an insulating material is disposed above each divided metal window 31, and a high-frequency antenna (inductively coupled antenna) 51 is disposed at a distance from the conductor plate 32 by the spacer. The high-frequency antenna 51 contributes to plasma generation and is formed by winding an antenna wire made of a highly conductive metal such as copper in a circular or spiral shape. For example, multiple circular antenna wires may be disposed. The high-frequency antenna 51 is disposed on the top surface of the divided metal window 31, and is therefore suspended from the top plate 12 via the divided metal window 31. The high-frequency antenna 51 is disposed in an antenna chamber A of the upper chamber 13, above the processing vessel 20.

[0032] Gas diffusion grooves 33 are formed in the lower surface of the conductor plate 32, and through holes 32b are provided to connect the gas diffusion grooves 33 to the upper end surface 32a. Gas introduction pipes 52 are embedded in the through holes 32b. The shower plate 34 has a plurality of gas discharge holes 35 that connect the gas diffusion grooves 33 of the conductor plate 32 to the processing chamber S. The shower plate 34 is fastened to the lower surface of the conductor plate 32 in an area outside the gas diffusion grooves 33 with metal screws (not shown). The gas diffusion grooves may also be provided in the upper surface of the shower plate.

[0033] Each divided metal window 31 is electrically insulated from the support frame 14 and the adjacent divided metal window 31 by an insulating member 37. The insulating member 37 is made of a fluororesin such as PTFE (Polytetrafluoroethylene). An end face 37a of the insulating member 37 facing the processing chamber S is flush with the exposed face 34a of the shower plate 34 facing the processing chamber S, and an insulating cover member 38 is disposed across the exposed face 34a of the adjacent shower plate 34 while covering the end face 37a of the insulating member 37. The cover member 38 is made of ceramic such as alumina.

[0034] The insulating member 37 is made of a lightweight resin such as PTFE, which has high insulating properties. However, compared to ceramics such as alumina, resins are not as plasma-resistant. Furthermore, it is difficult to apply a plasma-resistant coating to the resin surface by anodizing or ceramic spraying. Therefore, in the plasma processing apparatus 100, the end surface 37a of the insulating member 37 facing the processing chamber S is covered with a ceramic cover member 38, for example, to protect the insulating member 37 from plasma. Each insulating member 37, which insulates the support frame 14 from the divided metal windows 31 and between adjacent divided metal windows 31, is covered with the cover member 38.

[0035] A power supply member 53 extending above the upper chamber 13 is connected to the high-frequency antenna 51, and a power supply line 54 is connected to the upper end of the power supply member 53. The power supply line 54 is connected to a high-frequency power source 56 via a matching box 55 that performs impedance matching.

[0036] When high frequency power (first high frequency power), for example, of 13.56 MHz, is applied to the high frequency antenna 51 from the high frequency power supply 56, an inductive electric field is formed in the lower chamber 17. This inductive electric field converts the processing gas supplied from the shower plate 34 to the processing chamber S into plasma, generating inductively coupled plasma, and ions in the plasma are provided to the substrate G.

[0037] The high frequency power supply 56 is a source for generating plasma, and the high frequency power supply 83 connected to the substrate mounting table 70 is a bias source that attracts the generated ions and imparts kinetic energy to them. In this way, the ion source generates plasma using inductive coupling, and a bias source, which is a separate power supply, is connected to the substrate mounting table 70 to control the ion energy, thereby independently generating plasma and controlling the ion energy, thereby increasing the degree of freedom in the process.

[0038] 1, the gas introduction pipes 52 of each divided metal window 31 are gathered together in one place inside the antenna chamber A, and the gas introduction pipes 52 extending upward pass airtight through the supply port 12a opened in the top plate 12 of the upper chamber 13. The gas introduction pipes 52 are then connected to a process gas supply source 64 via an airtightly joined gas supply pipe 61.

[0039] An on-off valve 62 and a flow rate controller 63 such as a mass flow controller are provided midway along the gas supply pipe 61. The gas supply pipe 61, the on-off valve 62, the flow rate controller 63, and the process gas supply source 64 form a process gas supply unit 60. The gas supply pipe 61 branches midway, and each branch pipe is connected to an on-off valve, a flow rate controller, and a process gas supply source appropriate for the type of process gas (not shown).

[0040] In plasma processing, processing gas is supplied from a processing gas supply unit 60 via a gas supply pipe 61 and a gas introduction pipe 52 to the gas diffusion grooves 33 of the conductor plate 32 of each divided metal window 31. Then, the processing gas is discharged from each gas diffusion groove 33 into the processing chamber S via the gas discharge holes 35 of each shower plate 34.

[0041] Alternatively, the gas inlet pipes 52 of the divided metal windows 31 may not be combined into one, but may each be individually connected to the process gas supply unit 60, and the supply of process gas may be controlled for each divided metal window 31. Alternatively, the gas inlet pipes 52 of multiple divided metal windows 31 located outside the metal window 30 may be combined into one, and the gas inlet pipes 52 of multiple divided metal windows 31 located inside the metal window 30 may be separately combined into one, and each gas inlet pipe 52 may be individually connected to the process gas supply unit 60, and the supply of process gas may be controlled. That is, in the former configuration, the supply of process gas is controlled for each divided metal window 31, and in the latter configuration, the supply of process gas is controlled separately for the external region and the internal region of the metal window 30. Furthermore, each divided metal window 31 may have its own radio-frequency antenna, and radio-frequency power may be applied to each radio-frequency antenna individually.

[0042] As described above, the plasma processing apparatus 100 includes a plasma generating unit that generates processing plasma for performing substrate processing (etching processing, etc.) on the substrate G. The plasma generating unit includes at least the metal window 30 and the high-frequency antenna 51. The high-frequency power supply 56 supplies high-frequency power to the high-frequency antenna 51, and the processing gas supply unit 60 supplies processing gas to the processing chamber S through the divided metal window 31 (processing gas discharge unit). The plasma generating unit forms an induction electric field within the processing chamber S, and generates plasma of the processing gas supplied into the processing chamber S by this induction electric field.

[0043] The control unit 90 controls the operation of each component of the plasma processing apparatus 100, such as the chiller 86, the high-frequency power supplies 56 and 83, the processing gas supply unit 60, and the exhaust unit 300 based on monitor information transmitted from a pressure gauge. The control unit 90 includes a central processing unit (CPU), a read-only memory (ROM), and a random access memory (RAM). The CPU executes a predetermined process in accordance with a recipe (process recipe) stored in the storage area of ​​the RAM or ROM. The recipe contains control information for the plasma processing apparatus 100 relative to process conditions. The control information includes, for example, the gas flow rate, the pressure in the processing chamber 20, the temperature in the processing chamber 20, the temperature of the substrate 71, and the process time.

[0044] The recipes and the programs applied by the control unit 90 may be stored, for example, on a hard disk, a compact disk, a magneto-optical disk, etc. Alternatively, the recipes and the like may be stored on a portable computer-readable storage medium such as a CD-ROM, a DVD, or a memory card and set in the control unit 90 so that they can be read out. The control unit 90 also has user interfaces such as input devices such as a keyboard and a mouse for inputting commands, a display device such as a display that visualizes and displays the operating status of the plasma processing apparatus 100, and an output device such as a printer.

[0045] Here, the substrate processing speed (etching rate) in a substrate processing (etching process) for etching a film to be etched, such as a metal film or an insulating film formed on a substrate G, is rate-limited by the amount of processing gas (etching gas) supplied. In such substrate processing, which is rate-limited by the amount of processing gas supplied, the loading effect may cause the substrate processing speed to be faster in the peripheral region of the substrate G than in the central region of the substrate G, which may result in a decrease in the in-plane uniformity of the substrate processing.

[0046] FIG. 2 is an example of an enlarged partial cross-sectional view of the substrate mounting table 70 around the rectifying wall 200. To prevent a decrease in uniformity due to the loading effect, the rectifying wall 200 is provided on the shield ring 79 to surround the periphery of the substrate G mounted on the substrate mounting table 70. Because the substrate G is mounted in the mounting area of ​​the substrate mounting table 70, the rectifying wall 200 can also be said to surround the mounting area. The wall surface of the rectifying wall 200 is composed of at least a side surface facing the mounting area, a side surface opposite the mounting area, and an upper surface. The rectifying wall 200 forms a gas reservoir in the peripheral area of ​​the substrate G, thereby reducing the amount of processing gas supplied to the peripheral area of ​​the substrate G. This reduces the difference in substrate processing speed between the central area of ​​the substrate G and the peripheral area of ​​the substrate G, improving the in-plane uniformity of substrate processing.

[0047] Fig. 3 is an example of a plan view seen from above the substrate mounting table 70. As shown in Fig. 3, the flow rectifying walls 200 may be configured by arranging four flow rectifying walls 200 (200a to 200d) each made of a horizontally elongated rectangular plate along each side of the substrate G and combining them so that the overall shape is a quadrangular frame.

[0048] The arrangement of the rectifying walls 200 is not limited to the shape shown in FIG. 3. FIG. 4 is another example of a plan view of the substrate mounting table 70 as viewed from above. The rectifying walls 200 may be configured by arranging four rectifying walls 200 (200a to 200d) each having a horizontally elongated rectangular plate shape along each side of the substrate G and combining them to form a quadrangle as a whole. Gaps 201 may be formed between each rectifying wall 200 (200a to 200d) and the adjacent rectifying wall 200 (200a to 200d). For example, in FIG. 4, gaps 201 are formed between the rectifying wall 200a and the rectifying wall 200b, between the rectifying wall 200b and the rectifying wall 200c, between the rectifying wall 200c and the rectifying wall 200d, and between the rectifying wall 200d and the rectifying wall 200a. By providing the gap 201, reaction products generated during substrate processing can be discharged together with the gas, and therefore, deposition of the reaction products on the upper surface of the flow rectifying wall 200 and the inner wall surface of the flow rectifying wall 200 can be suppressed.

[0049] Furthermore, each of the flow-regulating walls 200a to 200d on each side may be configured to be divided midway along the side.

[0050] 2, the rectifying wall 200 includes an insulating member 210 and a conductive member 220. The insulating member 210 includes an upper surface 210a, an inner wall surface 210b, an outer wall surface 210d, and a lower surface 210e, and includes a recess 210c that opens to the lower surface 210e. The inner wall surface 210b is the side surface of the insulating member 210 facing the mounting area, and the outer wall surface 210d is the side surface of the insulating member 210 opposite the mounting area. The upper surface 210a constitutes the upper surface of the rectifying wall 200, the inner wall surface 210b constitutes the inner wall surface (side surface facing the mounting area) of the rectifying wall 200, the outer wall surface 210d constitutes the outer wall surface (side surface opposite the mounting area) of the rectifying wall 200, and the lower surface 210e constitutes the lower surface of the rectifying wall 200. Hereinafter, the upper surface of the flow straightening wall 200 may be referred to as upper surface 210a, the inner wall surface of the flow straightening wall 200 as inner wall surface 210b, the outer wall surface of the flow straightening wall 200 as outer wall surface 210d, and the lower surface of the flow straightening wall 200 as lower surface 210e.

[0051] The insulating member 210 is formed from an insulating material such as ceramics, such as alumina, or quartz. A thermal spray coating of Y2O3 or the like may be formed on the surface of the insulating member 210. This prevents the insulating member 210 from reacting with the processing gas, thereby preventing the generation and deposition of products, such as aluminum fluoride. The thermal spray coating may be formed on the entire surface of the insulating member 210 (the upper surface 210a, the inner wall surface 210b, the outer wall surface 210d, and the lower surface 210e), or may be formed on the upper surface 210a and the inner wall surface 210b of the insulating member 210 (see the thermal spray coating 230 described later in FIG. 8). The thermal spray coating may be a film that is more resistant to the processing gas and / or the plasma of the processing gas than the insulating member 210. The thermal spray coating is formed from a material (a material having plasma resistance) that is less worn by the processing gas and / or the plasma of the processing gas than the insulating member 210. The thermal spray coating may be a film that suppresses the adhesion of reaction products during substrate processing. The insulating member 210 has an internal cavity or recess 210c in which the conductive member 220 is disposed.

[0052] The conductive member 220 is formed from a conductive material such as metal. Specifically, the conductive member 220 is formed from aluminum, stainless steel (SUS), or the like. If the conductive member 220 is made of aluminum, the surface of the conductive member 220 may be anodized to improve resistance to processing gases (e.g., halogen-containing gases). If the conductive member 220 is made of stainless steel, it is resistant to processing gases (e.g., halogen-containing gases) and does not require surface treatment. The upper end of the conductive member 220 is formed above the upper surface of the electrostatic chuck 76 (the surface on which the substrate G is placed, the area where the substrate G is placed). The upper end of the conductive member 220 is formed above the upper surface of the substrate G placed on the electrostatic chuck 76.

[0053] The conductive member 220 is not connected to a GND or the like (is not grounded), but is floating in terms of potential and has a floating potential. The conductive member 220 is also arranged so as not to be electrically connected to the substrate 71 (bias electrode, lower electrode). In other words, insulating members (shield ring 79, insulating member 210) are interposed between the conductive member 220 and the substrate 71 (bias electrode, lower electrode) to which bias power is supplied from the high-frequency power supply 83, which is a bias power supply. Therefore, the conductive member 220 and the substrate 71 (bias electrode, lower electrode) form capacitive coupling via the insulating members (shield ring 79, insulating member 210). When high-frequency power is supplied to the substrate 71 (bias electrode, lower electrode) as bias power, the high-frequency power propagates to the conductive member 220. As a result, the potential of the wall surface of the rectifying wall 200 increases, and an ion sheath is formed in the space near the wall surface of the rectifying wall 200. The ion sheath draws cations from the plasma in the processing chamber S to the wall surface of the rectifying wall 200, and the drawn cations sputter the wall surface of the rectifying wall 200, more specifically the upper surface 210a and the inner wall surface 210b. This suppresses the deposition of reaction products on the upper surface 210a and the inner wall surface 210b of the rectifying wall 200. Note that when the outer wall surface 210d is also exposed to plasma, the effect of suppressing the deposition of reaction products may also be achieved on the outer wall surface 210d in the same way as on the upper surface 210a and the inner wall surface 210b.

[0054] 3 and 4, the conductive members 220 of the flow rectifying walls 200a to 200d on each side are not electrically connected to the conductive members 220 of the other flow rectifying walls 200a to 200d. Alternatively, in the flow rectifying wall 200 corresponding to one side, the conductive member 220 may be divided midway along the side. In this case, the divided conductive members 220 may be electrically connected to each other.

[0055] Furthermore, the conductive member 220 is disposed inside the insulating member 210 so as not to be exposed to the processing chamber S.

[0056] 2, the insulating member 210 may have a recess 210c on the lower surface 210e of the insulating member 210 (the surface that abuts against the shield ring 79), and the conductive member 220 may be fitted into the recess. In other words, the height of the conductive member 220 is equal to or less than the depth of the recess 210c. As a result, when the conductive member 220 is fitted into the recess, the conductive member 220 does not protrude below the lower surface 210e of the insulating member 210. Then, by placing the rectifying wall 200, in which the conductive member 220 is fitted into the recess of the insulating member 210, on the shield ring 79, the opening of the recess of the insulating member 210 is covered by the shield ring 79. As a result, the conductive member 220 is disposed inside the insulating member 210 and is not exposed to the processing chamber S.

[0057] Furthermore, the insulating member 210 may have a recess (first recess) on the lower surface 210e, and the shield ring 79 may also have a recess (second recess) on the upper surface. In this case, when the rectifying wall 200 (insulating member 210) is placed on the upper surface of the shield ring 79, the recess (first recess) formed on the lower surface 210e of the insulating member 210 and the recess (second recess) formed on the upper surface of the shield ring 79 communicate with each other to form an internal space in which the conductive member 220 is disposed, and the conductive member 220 is disposed in this internal space. In this configuration, when the conductive member 220 is fitted into the first recess, the conductive member 220 may protrude below the lower surface 210e of the insulating member 210, and the protruding portion of the conductive member 220 is fitted into the second recess.

[0058] 5 is an example of a cross-sectional view of the rectifying wall 200 when an insulating cover member 211 is added to the rectifying wall 200. As shown in FIG. 5, after fitting the conductive member 220 into the recess of the insulating member 210, an insulating cover member 211 made of the same material as the insulating member 210 may be fitted into the recess of the insulating member 210 to seal it, thereby disposing the conductive member 220 inside the insulating member 210 and preventing it from being exposed to the processing chamber S. Furthermore, the insulating member 210 and the insulating cover member 211 may be joined with an adhesive or the like. In this case, the recess of the insulating member 210 may be provided on a surface other than the lower surface 210e of the insulating member 210.

[0059] Alternatively, the insulating member 210 may have an internal cavity, and the conductive member 220 may be disposed in the internal cavity of the insulating member 210. In other words, the conductive member 220 may be embedded inside the insulating member 210.

[0060] Here, an example of substrate processing using the plasma processing apparatus 100 will be described. The substrate processing using the plasma processing apparatus 100 includes the steps of placing the substrate G on the placement area of ​​the substrate placement table 70, supplying a first high frequency power to the plasma generation unit to generate plasma, supplying the second high frequency power to the substrate placement table 70 to form a bias, and processing the substrate G with plasma while propagating the second high frequency power via capacitive coupling between the substrate placement table 70 and the conductive member 220.

[0061] In the process of placing the substrate G on the placement area of ​​the substrate placement table 70, the substrate G is placed on the upper surface (placement area) of the electrostatic chuck 76 of the substrate placement table 70, and the control unit 90 controls the DC power supply 85 to electrostatically adsorb the substrate G.

[0062] In the process of generating plasma by supplying a first high-frequency power to the plasma generating unit, the control unit 90 controls the processing gas supply unit 60 to supply a processing gas (e.g., a halogen-containing gas) to the gas introduction pipe 52, and controls the high-frequency power supply 56 to supply the first high-frequency power for generating plasma to the high-frequency antenna 51 to generate plasma.

[0063] In the step of supplying the second high frequency power to the substrate mounting table 70 to form a bias, the control unit 90 controls the high frequency power supply 83 to supply the second high frequency power for forming a bias to the base material 71 to form a bias. As a result, an ion sheath is formed in the space near the upper surface of the substrate G.

[0064] In the process of processing the substrate G with plasma while propagating the second high-frequency power via the capacitive coupling between the substrate mounting table 70 and the conductive member 220, the second high-frequency power supplied to the base material 71 propagates to the conductive member 220 via the capacitive coupling between the base material 71 and the conductive member 220. As a result, an ion sheath is formed in the space near the wall surface of the rectifying wall 200. Furthermore, ions are attracted to the substrate G by the ion sheath formed near the upper surface of the substrate G, and the substrate G is subjected to plasma processing (etching processing). At this time, reaction products of the plasma processing adhere to the wall surfaces (upper surface 210 a, inner wall surface 210 b) of the rectifying wall 200. Furthermore, ions are attracted to the wall surfaces (upper surface 210 a, inner wall surface 210 b) of the rectifying wall 200 by the ion sheath formed near the wall surfaces of the rectifying wall 200, and the reaction products adhering to the wall surfaces of the rectifying wall 200 are removed by sputtering. This makes it possible to prevent reaction products from accumulating on the wall surface of the flow-regulating wall 200 .

[0065] 6 is a graph showing an example of changes in etching rate. The graph shows changes in etching rate when etching a film to be etched on a substrate G using plasma of an etching gas (e.g., a mixed gas of Cl2, BCl3, and a rare gas) as a substrate processing. The horizontal axis indicates the direction toward the center of the substrate G, with the corner of the rectifying wall 200 set at 0 [mm]. The vertical axis indicates the etching rate at each position. The solid line indicates the results when a rectifying wall 200 having a conductive member 220 inside the insulating member 210 is used. The dashed line indicates the results when a rectifying wall made of only an insulating member (without a conductive member) is used. The dashed line indicates the results when a rectifying wall is not used.

[0066] When the flow straightening wall is not used (dotted line), the etching rate is higher in the peripheral region of the substrate G than in the central region of the substrate G due to the loading effect.

[0067] In contrast, when a straightening wall made only of insulating material is used (dashed line), the etching rate in the peripheral region of the substrate G can be reduced, the difference in etching rate between the central region of the substrate G and the peripheral region of the substrate G can be reduced, and in-plane uniformity can be improved.

[0068] Furthermore, even when the rectifying wall 200 having the conductive member 220 inside the insulating member 210 is used (solid line), the etching rate in the peripheral region of the substrate G can be reduced, as in the case where the rectifying wall made up of only an insulating member is used (dashed line), and the difference in etching rate between the central region and the peripheral region of the substrate G can be reduced, thereby improving in-plane uniformity. In other words, it has been confirmed that even when the rectifying wall 200 having the conductive member 220 inside the insulating member 210 is used, it is possible to obtain the same effect of improving in-plane uniformity as when a conventional rectifying wall not having a conductive member inside an insulating member is used.

[0069] Next, the provision of the rectifying walls may cause reaction products to adhere to and accumulate on the inner wall surface, upper surface, etc. of the rectifying walls. The deposited reaction products may peel off from the rectifying walls, generating particles, which may adhere to the substrate G, thereby reducing the yield of semiconductor devices formed on the substrate G. Furthermore, the accumulation of reaction products on the rectifying walls may shorten the maintenance cycle, increase downtime of the plasma processing apparatus 100, and reduce productivity.

[0070] FIG. 7 is a graph showing an example of the state of the wall surface of the rectifying wall. This graph shows the state of the upper surface of the rectifying wall when, as a substrate processing method, a film to be etched (here, an aluminum film) on a substrate G is etched with plasma of an etching gas (here, a mixture of Cl, BCl, and a rare gas). The deposition amount (amount of deposition) of reaction products was measured on the upper surfaces of the long sides of the rectifying wall (in the example of FIG. 3, the rectifying walls 200b and 200d) and the short sides of the rectifying wall (in the example of FIG. 3, the rectifying walls 200a and 200c). The results for the rectifying wall composed only of an insulating member (without a conductive member) (see the dashed line in FIG. 6) are shown by open bars, and the results for the rectifying wall 200 having a conductive member 220 inside the insulating member 210 (see the solid line in FIG. 6) are shown by filled bars.

[0071] In the case of the flow straightening wall made of only insulating material (without conductive material), deposition of reaction products was confirmed on the upper surface of the flow straightening wall on both the long and short sides of the wall.

[0072] In contrast, in the flow-regulating wall 200 having the conductive member 220 inside the insulating member 210, the surface of the insulating member 210 was slightly worn away, and it was confirmed that the deposition of reaction products was suppressed.

[0073] As described above, by using the rectifying wall 200 having the conductive member 220 inside the insulating member 210, it is possible to improve the in-plane uniformity of the substrate processing and to suppress the deposition of reaction products on the surface of the rectifying wall 200. Therefore, it is possible to suppress the generation of particles and improve the yield of semiconductor devices formed on the substrate G. In addition, it is possible to lengthen the maintenance cycle of the rectifying wall 200, and to improve the productivity of the plasma processing apparatus 100.

[0074] Next, the structure of the flow-regulating wall 200 will be further described with reference to Fig. 8 to Fig. 12. Here, the description will be made taking as an example a configuration in which the insulating member 210 has a recess 210c with an opening 210c4 in the lower surface 210e thereof, and the conductive member 220 is disposed in this recess 210c.

[0075] The conductive member 220 has a first conductive module 220A and a second conductive module 220B (see FIG. 10). The first conductive module 220A has conductive members (components 221, 222) that are long in the longitudinal direction of the rectifying wall 200, and is configured to press the conductive member (component 221) toward the upper surface 210a and the inner wall surface 210b within the recess 210c. The second conductive module 220B is configured to press the first conductive module 220A in the longitudinal direction of the rectifying wall 200. The second conductive modules 220B may be configured to be disposed at both ends of the first conductive module 220A, or may be configured to be disposed at either one of the ends.

[0076] The first conductive module 220A will be described with reference to Fig. 8 and Fig. 9. Fig. 8 is an example of a cross-sectional view of the flow rectifying wall 200. Fig. 9 is an example of a cross-sectional view of the flow rectifying wall 200 when the conductive member 220 is inserted into the recess 210c of the insulating member 210. Note that Figs. 8 and 9 are cross-sectional views of the flow rectifying wall 200 cut along a plane perpendicular to the longitudinal direction of the flow rectifying wall 200.

[0077] The insulating member 210 has a recess 210c having an opening 210c4 in a lower surface 210e (the surface that abuts against the upper surface of the shield ring 79 when the flow-regulating wall 200 is placed on the shield ring 79). The recess 210c has a top surface 210c1, a side surface 210c2, and a side surface 210c3. The side surface closer to the inner wall surface 210b (the side surface on the side of the mounting area where the substrate G is placed) is the side surface 210c2, and the side surface closer to the outer wall surface 210d (the side surface opposite the mounting area where the substrate G is placed) is the side surface 210c3.

[0078] The first conductive module 220A has a component 221 (first component), a component 222 (second component), a shaft part 223, and an elastic member 224 (first elastic member).

[0079] The component 221 is made of a conductive material such as metal. The component 221 has an abutment surface 221a1 (first abutment surface) that abuts against the top surface 210c1 and an abutment surface 221a2 (second abutment surface) that abuts against the side surface 210c2. The width of the abutment surface 221a1 (the width in the left-right direction on the paper in FIGS. 8 and 9) is slightly shorter than the width from the side surface 210c2 to the side surface 210c3. The height of the abutment surface 221a2 (the width in the up-down direction on the paper in FIGS. 8 and 9) is slightly shorter than the depth of the recess 210c.

[0080] The component 222 is formed of a conductive material such as metal, etc. The component 222 has an abutment surface 222a3 (third abutment surface) that abuts against the side surface 210c3.

[0081] The shaft part 223 is fixed to the component 221 and guides the component 222 so that it can move in the axial direction of the shaft part 223. Specifically, the shaft part 223 has a shaft portion that is inserted into the through hole of the component 222, a head portion formed at one end of the shaft portion and having a diameter larger than that of the through hole of the component 222, and a male thread portion formed at the other end of the shaft portion that is screwed into and fixed to the female threaded hole of the component 221. The shaft part 223 is fixed to the component 221 with its axis extending from the direction of the upper surface 210a and inner wall surface 210b to the direction of the lower surface 210e and outer wall surface 210d. The shaft part 223 may be formed of a conductive material such as metal to electrically connect the component 221 and the component 222.

[0082] The elastic member 224 is a compression spring wound in a coil shape, and is disposed on the shaft portion of the shaft part 223. The elastic member 224 is disposed between the components 221 and 222, and biases the components 221 and 222 in a direction separating them. In other words, the elastic member 224 biases the abutment surface 221a2 (second abutment surface) of the component 221 and the abutment surface 222a3 (third abutment surface) of the component 222 in a direction separating them, and biases the abutment surface 221a1 (first abutment surface) of the component 221 in a direction separating them from the component 222.

[0083] 9, the elastic member 224 is compressed (see the solid arrows) so that the width from the contact surface 221a2 to the contact surface 222a3 is narrower than the width from the side surface 210c2 to the side surface 210c3. This allows the first conductive module 220A to be easily inserted (see the hollow arrows) into the recess 210c of the insulating member 210.

[0084] Then, the restoring force of the elastic member 224 presses the abutment surface 222a3 of the component 222 against the side surface 210c3 of the recess 210c (see the outline arrow). Also, the abutment surface 221a2 of the component 221 presses against the side surface 210c2 of the recess 210c (see the outline arrow). As a result, the first conductive module 220A is held in the recess 210c of the insulating member 210 by the frictional force between the abutment surface 222a3 and the side surface 210c3 and the frictional force between the abutment surface 221a2 and the side surface 210c2, and is configured not to fall off. Furthermore, because the shaft part 223 and the elastic member 224 are arranged at an angle, the abutment surface 221a1 of the component 221 is pressed against the top surface 210c1 of the recess 210c (see the outline arrow).

[0085] With this configuration, the first conductive module 220A can be positioned by pressing the component 221 against the top surface 210c1 and the side surface 210c2 of the recess 210c. That is, the position of the surface (contact surface 221a1) of the conductive member 220 on the upper surface 210a side of the flow rectifying wall 200 and the position of the surface (contact surface 221a2) of the conductive member 220 on the inner wall surface 210b side of the flow rectifying wall 200 are determined, preventing misalignment during installation. This makes it possible to suppress individual differences in the flow rectifying wall 200 due to differences in the installation position of the first conductive module 220A. Furthermore, the performance of the flow rectifying wall 200 can be stabilized.

[0086] Next, an example of the dimensions of the rectifying wall 200 will be described. The width of the rectifying wall 200 (the width in the left-right direction on the paper in FIG. 8) is preferably 20 mm or more and 50 mm or less. The height of the rectifying wall 200 is preferably 20 mm or more and 50 mm or less. The distance from the edge of the substrate G to the inner wall surface 210b of the rectifying wall 200 is preferably 8 mm or more and 15 mm or less. Furthermore, the width of the gap 201 (see FIG. 4) is preferably 5 mm or more and 30 mm or less. With these dimensions, the rectifying wall 200 can suitably form a gas accumulation in the peripheral region of the substrate G. Therefore, it is possible to suppress the difference in substrate processing speed between the central region of the substrate G and the peripheral region of the substrate G, and improve the in-plane uniformity of substrate processing.

[0087] Regarding the thickness of the insulating member 210, the thickness of the side wall on the mounting area side (thickness from the inner wall surface 210b to the side surface 210c2) is preferably 2 mm or more and 5 mm or less. The thickness of the upper wall (thickness from the upper surface 210a to the ceiling surface 210c1) is preferably 2 mm or more and 5 mm or less. The film thickness of the thermal spray coating 230 is preferably 150 nm or more and 1000 nm or less. By setting these dimensions, an ion sheath can be suitably formed in the space near the wall surface of the flow rectifying wall 200 while ensuring the mechanical strength of the insulating member 210, and the wall surface of the flow rectifying wall 200 can be suitably sputtered. Furthermore, a sufficient thickness can be secured to prevent wear of the insulating member 210 due to sputtering (see FIG. 7), thereby extending the maintenance cycle of the flow rectifying wall 200. The thickness of the side wall on the opposite side from the mounting area (thickness from the outer wall surface 210d to the side surface 210c3) is preferably, for example, 2 mm or more and 10 mm or less.

[0088] FIG. 10 is an example of a view of the rectifying wall 200 seen from above. FIG. 11 is an example of a perspective view of the rectifying wall 200. FIG. 12 is an example of a perspective view of the rectifying wall 200. Note that FIGS. 10 to 12 illustrate the conductive members 220 (first conductive module 220A, second conductive module 220B) arranged inside the insulating member 210, through the insulating member 210. Also, FIGS. 11 and 12 omit the fixing member 229.

[0089] The second conductive module 220B has a component 225 (third component), a component 226 (fourth component), an axis component 227, an elastic member 228 (second elastic member), and a fixing member 229.

[0090] The component 225 is made of a conductive material such as metal, etc. The component 225 abuts against the end surface of the recess 210c in the longitudinal direction.

[0091] The component 226 is made of a conductive material such as metal, etc. The component 226 abuts against an end face in the longitudinal direction of the first conductive module 220A (component 222).

[0092] The shaft part 227 is fixed to the component 225 and guides the component 226 so that it can move in the axial direction of the shaft part 227. Specifically, the shaft part 227 has a shaft portion that is inserted into the through hole of the component 226, a head portion (not shown) formed at one end of the shaft portion and having a larger diameter than the through hole of the component 226, and a male thread portion (not shown) formed at the other end of the shaft portion that is screwed into and fixed to an internally threaded hole (not shown) of the component 225. The shaft part 227 is fixed to the component 225 with the longitudinal direction of the recess 210c as its axis. The shaft part 227 may be formed of a conductive material such as metal to electrically connect the component 225 and the component 226.

[0093] Elastic member 228 is a compression spring wound in a coil shape, and is disposed on the shaft portion of shaft part 227. Elastic member 228 is also disposed between components 225 and 226, and biases components 225 and 226 in a direction that separates them.

[0094] The fixing member 229 fixes the component 225 to the insulating member 210 .

[0095] With this configuration, the second conductive module 220B can position the first conductive module 220A in the longitudinal direction by pressing the first conductive module 220A against the recess 210c in the longitudinal direction.

[0096] 10, in the first conductive module 220A, the component 222 is formed to be longer in the longitudinal direction than the component 221. Therefore, the component 226 of the second conductive module 220B is configured to abut against the component 222 but not against the component 221. This prevents the second conductive module 220B from interfering with the elastic member 224 pressing the component 221 against the inner wall and upper surface.

[0097] Furthermore, when performing maintenance on the flow-regulating wall 200, the insulating member 210 can be cleaned or replaced, and the conductive member 220 (first conductive module 220A, second conductive module 220B) can be reused.

[0098] The plasma processing apparatus 100 has been described above, but the present disclosure is not limited to the above-described embodiments and various modifications and improvements are possible within the scope of the gist of the present disclosure as set forth in the claims. Furthermore, while the substrate processing described here is an etching process, the present disclosure is not limited thereto and is applicable to other processes as long as the substrate processing rate is determined by the supply of processing gas. Furthermore, in the above-described embodiment, the flow straightening wall has a rectangular ring shape overall. However, the present disclosure is not limited thereto and may have other shapes, such as a circular ring shape or an elliptical ring shape overall. For example, if the flow straightening wall has a circular ring shape, the substrate mounting table will have a circular shape in plan view, and the substrate will also have a circular shape. [Explanation of symbols]

[0099] G board 20 Processing container 30 Metal window (plasma generation section) 51 High frequency antenna (plasma generation part) 70 Substrate mounting table (mounting table) 74 ceramic layer 75 Conductive layer (adsorption electrode) 76 Electrostatic Chuck 79 Shield ring (shield component) 85 DC power supply 90 Control Unit 100 Plasma processing device 200 Rectification wall 201 Gap 210 Insulating material 210a top side 210b Inner wall surface 210c recess 211 Insulating cover member 220 Conductive materials 230 Thermal spray coating 220A First Conductive Module 220B Second Conductive Module 221,222,225,226 Components 223,227 Shaft parts 224, 228 Elastic members 229 Fixing member 221a1,221a2,222a3 Contact surface

Claims

1. A plasma processing apparatus for processing a substrate with plasma, comprising: a plasma generating unit to which a first high frequency power for generating the plasma is supplied; a mounting table having a mounting area on an upper surface thereof for mounting the substrate, the mounting area being supplied with second high frequency power for forming a bias on the mounting area; a flow straightening wall disposed to surround the placement area and having an upper end higher than the placement area; The flow straightening wall is an insulating member having a recess or internal cavity; a conductive member disposed in the recess or the internal cavity; Plasma processing equipment.

2. The conductive member is floating in potential. The plasma processing apparatus according to claim 1 .

3. The opening of the recess is formed on the lower surface of the insulating member. The plasma processing apparatus according to claim 1 .

4. The conductive member disposed in the recess does not protrude below the lower surface of the insulating member. The plasma processing apparatus according to claim 3 .

5. an insulating cover member made of the same material as the insulating member is placed in the opening of the recess; The conductive member is covered with the insulating member and the insulating cover member. The plasma processing apparatus according to claim 4 .

6. a thermal spray coating is formed on at least an upper surface of the insulating member and a side surface of the insulating member facing the mounting area; The plasma processing apparatus according to claim 1 .

7. the thermal spray coating is formed of a material that is less consumed by plasma than the insulating member; The plasma processing apparatus according to claim 6 .

8. the conductive member has a first conductive module including at least a first component, a second component, and a first elastic member disposed between the first component and the second component; the first conductive module is inserted into the recess or the internal cavity of the insulating member by compressing the first elastic member; The plasma processing apparatus according to claim 1 .

9. The first component is a first contact surface that contacts a top surface of the recess or the internal cavity; a second contact surface that contacts a side surface of the recess or the internal cavity on the side of the placement area, The second component is a third contact surface that contacts a side surface of the recess or the internal cavity opposite to the placement area side; The plasma processing apparatus according to claim 8 .

10. The first elastic member includes: biasing the second contact surface and the third contact surface in a direction separating them from each other; biasing the first abutment surface in a direction away from the second component; The plasma processing apparatus according to claim 9 .

11. the conductive member has a second conductive module including at least a third component, a fourth component, and a second elastic member disposed between the third component and the fourth component; the second conductive module is inserted into the recess or the internal cavity of the insulating member and biases the first conductive module in a longitudinal direction; The plasma processing apparatus according to claim 10.

12. the fourth component abuts the second component of the first conductive module; The plasma processing apparatus according to claim 11 .

13. a shield member made of a ceramic material and arranged in an annular shape surrounding the placement area; The flow straightening wall is disposed on an upper surface of the shield member. The plasma processing apparatus according to claim 1 .

14. an electrostatic chuck having an attraction electrode connected to a DC power supply in the mounting area and adapted to attract and hold the substrate; The plasma processing apparatus according to claim 1 .

15. A substrate processing method for processing a substrate with plasma in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a plasma generating unit to which a first high frequency power for generating the plasma is supplied; a mounting table having a mounting area on an upper surface thereof for mounting the substrate, the mounting area being supplied with second high frequency power for forming a bias on the mounting area; a flow straightening wall disposed to surround the placement area and having an upper end higher than the placement area; The flow straightening wall is an insulating member having a recess or internal cavity; a conductive member disposed in the recess or the internal cavity; placing the substrate on the placement area; supplying the first high frequency power to the plasma generating unit to generate plasma; supplying the second high frequency power to the mounting table to form a bias; and processing the substrate with the plasma while transmitting the second high frequency power via capacitive coupling between the mounting table and the conductive member. Substrate processing method.

16. The step of treating the substrate with the plasma is an etching process. The substrate processing method according to claim 15.

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