Semiconductor device and method for manufacturing the same

Abstract

To provide a semiconductor device capable of forming fine via holes in an insulating layer, ensuring adhesion between the insulating layer and wiring after high-temperature reflow processing, and suppressing insulation failure.SOLUTION: A semiconductor device 1 comprises: a plurality of semiconductor chips 2; a sealing member 3 covering a part of the plurality of semiconductor chips 2; and a redistribution layer 4 disposed on the surface side of semiconductor chip 2 not covered by the sealing member 3, and having a larger area than semiconductor chip 2 when viewed in plan view, and the redistribution layer 4 includes wiring 5 electrically connected to the semiconductor chip 2 and an insulating layer 6 with a glass transition point of 240 to 320°C.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device, a manufacturing method thereof, and the like. [Background technology]

[0002] There are various semiconductor packaging methods for semiconductor devices. For example, one semiconductor packaging method involves covering a portion of a semiconductor chip with an encapsulant and forming a rewiring layer electrically connected to the semiconductor chip on the side of the semiconductor chip that is not covered by the encapsulant. Among these semiconductor packaging methods, a semiconductor packaging method called fan-out has become mainstream in recent years.

[0003] In a fan-out type semiconductor package, a protective layer is formed on a predetermined surface of a semiconductor chip, and an encapsulant is disposed on the other surface of the semiconductor chip, thereby forming a chip encapsulation body that is larger than the chip size of the semiconductor chip. Then, a rewiring layer is formed over the protective layer and the encapsulant area. This rewiring layer is formed with a thin film thickness. Because the rewiring layer can be formed over the encapsulant area, the semiconductor package can hold many external connection terminals. For example, the device described in Patent Document 1 is known as a fan-out type semiconductor device.

[0004] Furthermore, as semiconductor microfabrication technology has become more advanced in recent years, it has become more difficult to increase manufacturing yields. To address this issue, multi-chip technology, which connects multiple semiconductor chips, such as chiplets, via an interposer to create a single package, is being considered. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-129767 Summary of the Invention [Problem to be solved by the invention]

[0006] In fan-out semiconductor devices, the rewiring layer includes an insulating layer, and in this case, the wiring electrically connected to the semiconductor chip is often covered by the insulating layer. Furthermore, with the recent trend toward finer wiring, it has become necessary to form finer via holes in the insulating layer. Furthermore, in semiconductor devices with a multi-chip structure, the copper wiring connecting multiple semiconductor chips is fine wiring, and therefore it has become necessary to form even finer via holes.

[0007] In addition, the inventors focused on a semiconductor device in which the insulating layer after wiring formation exhibits high adhesion between the insulating layer and wiring, even after the high-temperature reflow process used in the process of forming a semiconductor device, and insulation defects are unlikely to occur. However, in conventional semiconductor devices (fan-out type semiconductor devices) including the device described in Patent Document 1, the adhesion between the insulating layer in the rewiring layer and the wiring after the high-temperature reflow process is insufficient.

[0008] The present disclosure has been made in consideration of the above points, and aims to provide a semiconductor device and a manufacturing method thereof that can form fine via holes in an insulating layer, ensure adhesion between the insulating layer and wiring after a high-temperature reflow process, and suppress insulation defects. [Means for solving the problem]

[0009] Examples of embodiments of the present disclosure are shown in the following items [1] to

[38] . [1] A semiconductor device comprising: a plurality of semiconductor chips; an encapsulating material that covers a portion of the semiconductor chips; and a redistribution layer that is arranged on the side of the semiconductor chips that is not covered by the encapsulating material and has an area larger than that of the semiconductor chips in a planar view, wherein the redistribution layer includes wiring that is electrically connected to the semiconductor chips; and an insulating layer that has a glass transition point of 240 to 320°C. [2] Item 2. The semiconductor device according to item 1, wherein the insulating layer has a layer structure of three or more layers. [3] 3. The semiconductor device according to item 1 or 2, wherein the redistribution layer has a stacked via structure. [4] 4. The semiconductor device according to any one of items 1 to 3, wherein the sealing material is in contact with the insulating layer. [5] 5. The semiconductor device according to any one of items 1 to 4, wherein the sealing material contains an epoxy resin. [6] 6. The semiconductor device according to any one of items 1 to 5, wherein the glass transition point is 245 to 315°C. [7] 7. The semiconductor device according to any one of items 1 to 6, wherein the glass transition point is 260 to 310°C. [8] 8. The semiconductor device according to any one of items 1 to 7, wherein the glass transition point is 265 to 300°C. [9] 9. The semiconductor device according to any one of items 1 to 8, wherein the insulating layer has a Young's modulus of 3 to 7 GPa.

[10] 10. The semiconductor device according to any one of items 1 to 9, wherein the insulating layer contains at least one selected from the group consisting of carbon (C), hydrogen (H), nitrogen (N), oxygen (O), silicon (Si), and titanium (Ti).

[11] 11. The semiconductor device according to any one of items 1 to 10, wherein the insulating layer does not contain halogen.

[12] 12. The semiconductor device according to any one of items 1 to 11, wherein the insulating layer includes at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[13] The semiconductor device optionally includes a protective layer for protecting the semiconductor chip, 13. The semiconductor device according to any one of items 1 to 12, wherein when the semiconductor device includes the protective layer, the protective layer is disposed between the semiconductor chip and the insulating layer.

[14] Item 14. The semiconductor device according to item 13, wherein the protective layer is in contact with at least one of the semiconductor chip and the insulating layer.

[15] Item 15. The semiconductor device according to item 13 or 14, wherein a hole is formed in the protective layer, and the semiconductor chip and a wiring electrically connected to the semiconductor chip are electrically connected through the hole.

[16] Item 16. The semiconductor device according to item 15, wherein the opening area of ​​the protective layer on the semiconductor chip side is less than half due to the holes.

[17] 17. The semiconductor device according to any one of items 13 to 16, wherein the protective layer includes at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[18] At least one of the protective layer and the insulating layer is represented by the following general formula (1): [ka] (In the formula, X 1 is a tetravalent organic group derived from tetracarboxylic dianhydride, and Y 1 is a divalent organic group derived from a diamine, and m is an integer of 1 or greater. 18. The semiconductor device according to any one of items 13 to 17, comprising a polyimide having the structure:

[19] X in the above general formula (1) 1 is a tetravalent organic group containing an aromatic ring, Y in the above general formula (1) 1 Item 19. The semiconductor device according to item 18, wherein is a divalent organic group containing an aromatic ring.

[20] X in the above general formula (1) 1 are represented by the following general formulas (2) to (6): [ka] [ka] [ka] (Wherein, R9 is 、 is an oxygen atom, a sulfur atom, a sulfonyl group, or a divalent organic group. [ka] [ka] 20. The semiconductor device according to item 18 or 19, comprising at least one structure represented by: [twenty one] Y in the above general formula (1) 1 are represented by the following general formulas (7) to (10): [ka] (In the formula, R 10 , R 11 , R 12 , and R 13 are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. [ka] (In the formula, R 14 ~R 21 are each independently a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. [ka] (In the formula, R 22 is a divalent group or an oxygen atom, and R 23 ~R 30 are each independently a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different from each other; k is an integer of 1 to 3; when k is 2 or 3, R 22 , R 23 , R 24,R 27 , R 28 may be the same or different.) [ka] 21. The semiconductor device according to any one of items 18 to 20, comprising at least one structure represented by the following formula: [twenty two] The insulating layer is formed of a compound represented by the following general formula (11): [ka] (In the formula, U and V each independently represent a divalent organic group.) Item 13. The semiconductor device according to item 12, comprising the polybenzoxazole having the structure: [twenty three] Item 23. The semiconductor device according to item 22, wherein U in the general formula (11) is a divalent organic group having 1 to 30 carbon atoms. [twenty four] 24. The semiconductor device according to item 22 or 23, wherein U in the general formula (11) is a chain alkylene group having 1 to 8 carbon atoms and in which some or all of the hydrogen atoms are substituted with fluorine atoms. [twenty five] 25. The semiconductor device according to any one of items 22 to 24, wherein V in the general formula (11) is a divalent organic group having 1 to 40 carbon atoms.

[26] 26. The semiconductor device according to any one of items 22 to 25, wherein V in the general formula (11) is a divalent chain aliphatic group having 1 to 20 carbon atoms.

[27] 27. The semiconductor device according to any one of items 22 to 26, wherein V in the general formula (11) is a divalent organic group containing an aromatic group.

[28] V in the above general formula (11) is represented by the following general formulas (7) to (10): [ka] (In the formula, R 10 , R 11 , R 12 , and R 13are each independently a hydrogen atom or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different. [ka] (In the formula, R 14 ~R 21 are each independently a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be the same or different. [ka] (In the formula, R 22 is a divalent group or an oxygen atom, and R 23 ~R 30 are each independently a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different from each other; k is an integer of 1 to 3; when k is 2 or 3, R 22 , R 23 , R 24 ,R 27 , R 28 may be the same or different.) [ka] 28. The semiconductor device according to any one of items 22 to 27, comprising at least one structure represented by:

[29] Item 13. The semiconductor device according to item 12, wherein the polymer having a phenolic hydroxyl group comprises a novolac phenolic resin.

[30] Item 13. The semiconductor device according to item 12, wherein the polymer having a phenolic hydroxyl group includes a phenolic resin having no unsaturated hydrocarbon group and a modified phenolic resin having an unsaturated hydrocarbon group.

[31] 31. The semiconductor device according to any one of items 1 to 30, wherein the insulating layer includes a first insulating layer and a second insulating layer having a different composition from the first insulating layer.

[32] 32. The semiconductor device according to any one of items 1 to 31, wherein the semiconductor device is a fan-out type, wafer level chip size package type semiconductor device.

[33] A method for manufacturing a semiconductor device, comprising: a first step of preparing a plurality of semiconductor chips; a second step of covering the prepared semiconductor chips with a sealing material so that at least a portion of the semiconductor chips is exposed; and a third step of forming a redistribution layer having an area larger than that of the semiconductor chips in a planar view on the exposed surface side of the semiconductor chips, wherein the redistribution layer includes an insulating layer having a glass transition point of 240 to 320°C.

[34] Item 34. The method for producing a semiconductor device according to Item 33, wherein the insulating layer is formed from a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[35] Item 35. The method for manufacturing a semiconductor device according to Item 33 or 34, wherein the second step includes a step of forming a protective layer on the semiconductor chip, and a step of covering the semiconductor chip on which the protective layer has been formed with an encapsulant so that at least a part of the protective layer is exposed, and the third step includes a step of forming the redistribution layer on the protective layer side.

[36] 36. The method for producing a semiconductor device according to any one of items 33 to 35, wherein the protective layer is formed from a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[37] An insulating layer for use in forming the redistribution layer in a semiconductor device comprising: a plurality of semiconductor chips; a sealing material covering a portion of the semiconductor chips; and a redistribution layer disposed on the surface of the semiconductor chips that is not covered by the sealing material and that has an area larger than that of the semiconductor chips in a planar view, the insulating layer having a glass transition point of 240 to 320°C.

[38] A rewiring layer is provided in a semiconductor chip having a plurality of semiconductor chips and a sealing material covering a portion of the semiconductor chips, the rewiring layer being arranged on a surface side not covered by the sealing material and having an area larger than that of the semiconductor chips in a planar view, the rewiring layer including wiring electrically connected to the semiconductor chips and an insulating layer in contact with the wiring and having a glass transition point of 240 to 320°C. [Effects of the Invention]

[0010] According to the present disclosure, it is possible to provide a semiconductor device that can form fine via holes in an insulating layer, ensure adhesion between the insulating layer and wiring after a high-temperature reflow process, and suppress insulation defects, and a manufacturing method thereof. Furthermore, according to the present disclosure, it is possible to provide an insulating layer and a rewiring layer that can realize the above semiconductor device. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a cross-sectional view schematically illustrating a configuration example of a semiconductor device according to the present disclosure. [Figure 2] 1 is a schematic plan view showing a configuration example of a semiconductor device according to the present disclosure. [Figure 3] 1 shows an example of a manufacturing process for the semiconductor device of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. The present disclosure is not limited to the following embodiments, and various modifications can be made within the scope of the gist thereof. In this specification, in numerical ranges described in stages, the upper or lower limit value described in a certain numerical range may be replaced by the upper or lower limit value of another numerical range described in stages, or may be replaced by the corresponding value in the examples. The scales, shapes, lengths, etc. shown in the drawings may be exaggerated for clarity.

[0013] Semiconductor Device Fig. 1 is a cross-sectional view showing an example of the configuration of a semiconductor device 1, and Fig. 2 is a plan view showing an example of the configuration of the semiconductor device 1. As shown in the figure, the semiconductor device (semiconductor IC) 1 includes a plurality of semiconductor chips 2, an encapsulant 3 that covers the semiconductor chips 2 so that at least a portion of the semiconductor chips 2 is exposed, and a rewiring layer 4 that is disposed on the side of the semiconductor chips 2 that is not covered by the encapsulant 3 and has an area larger than that of the semiconductor chips 2 in a plan view, and the rewiring layer 4 includes wiring 5 electrically connected to the semiconductor chips 2 and an insulating layer (hereinafter, sometimes referred to as an "interlayer insulating film") 6 having a glass transition point of 240 to 320°C.

[0014] The semiconductor chips 2 are partially covered with an encapsulant 3, and the other surfaces not covered with the encapsulant 3 are covered with a redistribution layer 4 having an area larger than that of the semiconductor chips 2 in a plan view. The redistribution layer 4 includes wiring 5 electrically connected to the semiconductor chips 2 and an insulating layer (hereinafter sometimes referred to as an "interlayer insulating film") 6 having a glass transition point of 240 to 320°C. Each of the semiconductor chips 2 may include a protective layer 8 between the redistribution layer 4 and the encapsulant 3.

[0015] In Fig. 1, multiple semiconductor chips 2 are arranged in parallel along the surface direction (the direction perpendicular to the A direction in Fig. 1). The semiconductor chips 2 are made of a semiconductor such as silicon, and have circuits formed therein. The configurations of the semiconductor chips 2 may be the same or different.

[0016] The redistribution layer 4 is formed to be larger than the semiconductor chip 2 in plan view (as viewed from the arrow A in FIG. 1). That is, the semiconductor device 1 of the present disclosure is a fan-out type wafer level chip size package (WLCSP) type semiconductor device.

[0017] <Rewiring layer> The redistribution layer 4 is composed of wiring 5 and an insulating layer 6. Specifically, the redistribution layer 4 is composed of a plurality of wirings 5 ​​electrically connected to a plurality of terminals 2a provided on the semiconductor chip 2, and an insulating layer 6 that fills the spaces between the wirings 5. The terminals 2a and the wirings 5 ​​are electrically connected. One end of the wiring 5 is connected to the terminal 2a, and the other end is connected to an external connection terminal 7. The wiring 5 between the terminal 2a and the external connection terminal 7 is covered with the insulating layer 6.

[0018] The insulating layer 6 in the redistribution layer 4 has a layer structure of three or more layers, which makes it easier to ensure the flatness of each insulating layer, and therefore of the finally obtained redistribution layer 4. The insulating layer 6 in the redistribution layer 4 may have nine or less layers. Here, the "rewiring layer" in this disclosure does not include a printed wiring board.

[0019] The thickness of the rewiring layer 4 is approximately 3 to 30 μm. The thickness of the rewiring layer 4 may be 1 μm or more, 5 μm or more, or 10 μm or more. The thickness of the rewiring layer 4 may be 40 μm or less, 30 μm or less, or 20 μm or less.

[0020] 2 shows a plan view (as viewed from the arrow A in FIG. 1) of the semiconductor device 1. However, the sealing material 3 is not shown. The semiconductor device 1 is configured such that, in a plan view, the area S1 of the redistribution layer 4 is larger than the area S2 of the semiconductor chip 2. From the viewpoint of increasing the number of external connection terminals, the area S1 of the redistribution layer 4 is preferably 1.05 times or more, more preferably 1.1 times or more, more preferably 1.2 times or more, and particularly preferably 1.3 times or more, the area S2 of the semiconductor chip 2. Furthermore, the area S1 of the redistribution layer 4 may be 50 times or less, 25 times or less, 10 times or less, or 5 times or less the area S2 of the semiconductor chip 2. Note that the area S1 of the redistribution layer 4, including the area of ​​the portion of the redistribution layer 4 that overlaps the semiconductor chip 2 in a plan view, is also included in the area S1 of the redistribution layer 4.

[0021] The external shapes of the semiconductor chip 2 and the redistribution layer 4 may be the same or different. In Fig. 2, the external shapes of the semiconductor chip 2 and the redistribution layer 4 are both similar rectangular shapes, but the shapes may be other than rectangular.

[0022] (insulating layer and wiring) The insulating layer 6 is preferably made of a highly insulating material from the viewpoint of preventing unintended conduction with the wiring 5. The wiring 5 may be made of any material as long as it has high conductivity, and copper is generally used.

[0023] Here, the wiring 5 includes wiring 5a that electrically connects the plurality of semiconductor chips 2 together. The wiring 5a may be directly connected to the semiconductor chip 2, or may be connected to wiring 5 that is connected to the semiconductor chip 2 (for example, wiring 5 stacked downward of the semiconductor chip 2). The wiring 5a may be configured as a wiring layer, and the wiring 5a may also configure part of the rewiring layer 4, like other wirings. The wiring 5a may electrically connect at least two or more of the semiconductor chips 2 included in the semiconductor device 1, or may electrically connect all of the semiconductor chips 2 included in the semiconductor device 1.

[0024] In the semiconductor device 1, the wiring 5a may be configured as a fine wiring among the wirings 5. When wirings 5 ​​other than the wiring 5a are referred to as other wirings (5b), the thickness of the wiring 5a may be less than the maximum thickness of the other wirings 5b that have the maximum thickness.

[0025] The insulating layer 6 has a glass transition point of 240 to 320°C. The glass transition point can be measured by the method described in the Examples below. In the present disclosure, if the glass transition point is within the above range, it is possible to form fine via holes in the insulating layer, ensure adhesion between the insulating layer and wiring after a reliability test, and suppress insulation defects. The reason for this is not clear, but the inventors believe it to be as follows.

[0026] First, the manufacturing process of a semiconductor device generally includes a high-temperature reflow process. The high-temperature reflow test involves subjecting a redistribution layer to a thermal history of approximately 260°C. Because the insulating layer and the wiring layer have different linear expansion coefficients, residual stress is generated in the redistribution layer during the process of shrinkage associated with the thermal history. In conventional semiconductor devices (e.g., semiconductor devices with a single semiconductor chip), residual stress is easily alleviated. On the other hand, in semiconductor devices with multiple semiconductor chips, the semiconductor chips are connected by fine wiring, which creates points where residual stress tends to concentrate (stress concentration points). Therefore, peeling between the wiring and the insulating layer is likely to occur due to the thermal history. The ability to form fine via holes in the insulating layer and ensure adhesion between the insulating layer and the wiring after the high-temperature reflow process and suppress insulation defects are challenges that have only recently been identified in semiconductor devices with a multi-chip structure (semiconductor devices with multiple semiconductor chips), which have been recognized as a new technology.

[0027] In the present disclosure, by controlling the glass transition temperature of the insulating layer to 240°C or higher, the difference in the linear expansion coefficient between the insulating layer and the wiring can be suppressed even in a semiconductor device having a multi-chip structure, and thus peeling of the wiring and the insulating layer due to residual stress can be prevented. This ensures adhesion. From the above viewpoints, the glass transition temperature of the insulating layer is preferably 245°C or higher, more preferably 260°C or higher, and particularly preferably 265°C or higher.

[0028] On the other hand, if the glass transition point of the insulating layer is excessively high, the transmittance of the exposure light through the photosensitive resin composition is low. Therefore, when forming a via hole, i.e., when irradiating a coating film of the composition with exposure light, the light tends to not sufficiently reach the bottom of the coating film. Therefore, by controlling the glass transition point of the insulating layer to 320°C or less, good developability and, ultimately, good resolution can be obtained. From the above viewpoint, the glass transition point of the insulating layer is preferably 315°C or less, more preferably 310°C or less, and particularly preferably 300°C or less.

[0029] The glass transition temperature of the insulating layer can be designed within the above range by selecting the polymer structure contained in the insulating layer and / or the amount and type of additives (e.g., silane coupling agents, crosslinking agents, etc.) added to the insulating layer. For example, methods for increasing the glass transition temperature include introducing a rigid structure into the polymer structure, or introducing such a compound as an additive into the insulating layer. For example, in the case of polyimide, acid dianhydrides and / or diamines having a biphenyl structure or an ester structure can be selected as raw material monomers. Furthermore, acid anhydrides / diamines with low molecular weights can also be used to increase the imide group concentration in the polyimide. Examples of additives that can be used here include crosslinkers containing multiple methacrylic groups, and crosslinkers having multiple alkoxymethyl groups, methylol groups, etc. Examples of usable additives will be described later.

[0030] Methods for lowering the glass transition temperature of an insulating layer include introducing a flexible structure into the polymer structure, or introducing such a compound into the insulating layer as an additive. For example, in the case of polyimide, acid dianhydrides and / or diamines having alkylene oxide structures, ether structures, etc., can be selected as raw material monomers. Furthermore, acid anhydrides / diamines with large molecular weights can also be used to lower the imide group concentration in polyimide. Examples of additives that can be used here include additives having alkylene oxide structures. Examples of usable additives are described below.

[0031] The Young's modulus of the insulating layer is preferably 3 to 7 GPa. By controlling the Young's modulus of the insulating layer to 3 GPa or more, cracking of the insulating layer after high-temperature reflow tends to be suppressed. Furthermore, by controlling the Young's modulus of the insulating layer to 7 GPa or less, chemical resistance tends to be good. From the above viewpoints, the Young's modulus of the insulating layer is preferably 3.5 GPa or more, more preferably 4.0 GPa or more, and particularly preferably 4.5 GPa or more. From the above viewpoints, the Young's modulus of the insulating layer is preferably 6.5 GPa or less, more preferably 6.0 GPa or less, and particularly preferably 5.5 GPa or less.

[0032] The Young's modulus of the insulating layer can be designed within the above range by selecting the polymer structure contained in the insulating layer and / or the amount and type of additive (e.g., silane coupling agent, crosslinking agent, etc.) added to the insulating layer. Methods for increasing the Young's modulus include, for example, introducing a rigid structure into the polymer structure, or introducing such a compound as an additive into the insulating layer. On the other hand, methods for decreasing the Young's modulus of the insulating layer include, for example, introducing a flexible structure into the polymer structure, or introducing such a compound as an additive into the insulating layer. For specific examples, see the contents described above as methods for increasing the glass transition temperature of the insulating layer and methods for decreasing the glass transition temperature of the insulating layer.

[0033] However, an insulating layer with a high Young's modulus does not necessarily have a high glass transition point. In other words, just because an insulating layer has a Young's modulus within a predetermined range does not necessarily mean that the glass transition point is also within the predetermined range. The present disclosure provides a semiconductor device using an insulating layer with a relatively high glass transition point, based on the new perspective of the glass transition point, and in a preferred embodiment, provides a semiconductor device in which the Young's modulus is also controlled within a predetermined range.

[0034] The insulating layer 6 in the redistribution layer 4 may be multi-layered as described above. For example, when viewed in cross section, the redistribution layer 4 may include a first insulating layer, a second insulating layer, and an intermediate layer that is different from the first insulating layer and the second insulating layer and is provided between the first insulating layer and the second insulating layer. The intermediate layer is, for example, a wiring 5.

[0035] The first insulating layer and the second insulating layer may have the same or different compositions, Young's modulus, and film thickness. Different compositions of the first insulating layer and the second insulating layer allow each insulating layer to have different properties. In one embodiment, insulating layer 6 includes a first insulating layer and a second insulating layer having a different composition from the first insulating layer.

[0036] The insulating layer 6 preferably contains at least one selected from the group consisting of, for example, polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group, which makes it easier to achieve the effects of the present disclosure.

[0037] The resin composition used to form the insulating layer 6 may be any photosensitive resin composition, and is preferably a photosensitive resin composition containing at least one selected from the group consisting of a polyimide precursor, a polybenzoxazole precursor, and a polymer having a phenolic hydroxyl group. Such a photosensitive resin composition may be either negative or positive. The resin composition used to form the insulating layer 6 may be in the form of a liquid or a film.

[0038] In the present disclosure, the pattern obtained after exposing and developing the photosensitive resin composition is referred to as a “relief pattern,” and the relief pattern obtained by curing the same by heating is referred to as a “cured relief pattern.” This cured relief pattern constitutes the protective layer 8 and the insulating layer 6. In the present disclosure, the insulating layer preferably contains at least one element selected from the group consisting of carbon (C), hydrogen (H), nitrogen (N), oxygen (O), silicon (Si), and titanium (Ti). This makes it easier to achieve the effects of the present disclosure. Here, the insulating layer 6 of the present disclosure preferably does not contain halogen. By not introducing functional groups with large free volumes, such as halogens, it is easier to suppress a decrease in the chemical resistance of the insulating layer 6.

[0039] <Sealing material> The sealing material 3 covers the surfaces (side and top surfaces) of the semiconductor chip 2 and is formed with an area larger than the region of the semiconductor chip 2 in a plan view (viewed from the arrow A in FIG. 1).

[0040] The encapsulant 3 is preferably in contact with the semiconductor chip 2 and the rewiring layer 4. In particular, the encapsulant 3 is preferably in contact with the insulating layer 6 in the rewiring layer 4. This makes it easy to effectively improve the sealing performance from the semiconductor chip 2 to the rewiring layer 4. From the viewpoints of heat resistance and adhesion to the insulating layer 6, the encapsulant 3 preferably contains an epoxy resin.

[0041] The sealing material 3 may be a single layer or multiple layers. When the sealing material 3 is multiple layers, the materials of the multiple layers may be the same or different materials.

[0042] <Protective layer> The protective layer 8 protects the semiconductor chip 2. From the viewpoint of protecting the semiconductor chip 2 against physical impact, the Young's modulus of the protective layer 8 is preferably 4.0 GPa or more, more preferably 4.5 GPa or more, and particularly preferably 5 GPa or more. When the protective layer is made of a photosensitive resin composition, from the viewpoint of developability, the Young's modulus of the protective layer 8 is preferably 9.0 GPa or less, more preferably 8.5 GPa or less, and particularly preferably 8.0 GPa or less. The Young's modulus can be calculated by a tensile test, a nanoindentation test, or the like.

[0043] The protective layer 8 is provided on the surface of the semiconductor chip 2 that is not covered by the encapsulating material 3. When the semiconductor chip 2 is viewed from above (as viewed from the arrow A in FIG. 1) from the side covered by the encapsulating material 3, the protective layer 8 is hidden in the shadow of the semiconductor chip 2 and therefore cannot be observed.

[0044] The protective layer 8 is in contact with at least one of the semiconductor chip 2 and the insulating layer 6. This makes it easier to protect the semiconductor chip 2 in an appropriate manner. Furthermore, this configuration is an embodiment in which improved adhesion between the protective layer 8 and the insulating layer 6 is desired, and even in the case of the semiconductor device 1 having such an embodiment, it is possible to improve the adhesion between the protective layer 8 and the insulating layer 6. In particular, in the semiconductor device 1, the protective layer 8 is in contact with both the semiconductor chip 2 and the insulating layer 6, which is a more preferable embodiment from the above viewpoint. Although omitted in the semiconductor device 1, other members may be interposed between the semiconductor chip 2 and the insulating layer 6 as long as the effects of the present disclosure can be obtained.

[0045] Holes 8a are formed in the protective layer 8, and the semiconductor chip 2 side and the wiring 5 side are electrically connected through the holes 8a. This ensures electrical connection between the semiconductor chip 2 side and the wiring 5 side, and also makes it easier to further protect the semiconductor chip 2. A plurality of holes 8a are provided in the protective layer 8 corresponding to the terminals 2a of the semiconductor chip 2, and the terminals 2a are inserted into each of the plurality of holes 8a.

[0046] In the semiconductor device 1, the opening area resulting from the holes 8a is less than half of the surface of the protective layer 8 facing the semiconductor chip 2. This ensures a protective area for protecting the semiconductor chip 2, making it easier to further protect the semiconductor chip 2. Here, the "opening area" refers to the total area of ​​the opening entrances on the surface facing the semiconductor chip 2.

[0047] The protective layer preferably contains at least one selected from the group consisting of, for example, polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[0048] The resin composition used to form the protective layer 8 may be any photosensitive resin composition, and is preferably, for example, a photosensitive resin composition containing at least one selected from the group consisting of a polyimide precursor, a polymer having a polyimide moiety and a polyimide precursor moiety in the polymer structure, a solvent-soluble polyimide, a polybenzoxazole precursor, and a polymer having a phenolic hydroxyl group. Such a photosensitive resin composition may be either negative or positive. The resin composition used to form the protective layer 8 may be in the form of a liquid or a film.

[0049] <Polyimide precursor> (A) Photosensitive resin Examples of the photosensitive resin (A) used to prepare the polyimide precursor include polyamides and polyamic acid esters. Examples of the polyamic acid esters include those represented by the following general formula (12): [ka] (In the formula, R 1 and R 2 are each independently a hydrogen atom, a saturated aliphatic group having 1 to 30 carbon atoms, an aromatic group, a monovalent organic group having a carbon-carbon unsaturated double bond, or a monovalent ion having a carbon-carbon unsaturated double bond; and X 1 is a tetravalent organic group derived from tetracarboxylic dianhydride, and Y 1 is a divalent organic group derived from a diamine, and m is an integer of 1 or greater. It is possible to use a polyamic acid ester containing a repeating unit represented by the following formula: In the formula, m is preferably 2 or more, more preferably 5 or more. Furthermore, m may be 200 or less.

[0050] In the above formula (12), R 1 and R 2 When present as a monovalent cation, O carries a negative charge, i.e., -O - It exists as X 1 and Y 1 may contain a hydroxyl group. R 1 , and / or R2 is represented by the following general formula (13): [ka] (In the formula, R3, R4, and R5 are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m1 is an integer of 1 to 20.) and more preferably a monovalent organic group represented by the following general formula (14): [ka] (In the formula, R6, R7, and R8 are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m2 is an integer of 1 to 20.) It is also more preferable that the structure has an ammonium ion at the end of the monovalent organic group, as represented by the following formula:

[0051] A plurality of polyamic acid esters represented by the general formula (12) may be mixed together, or a polyamic acid ester obtained by copolymerizing polyamic acid esters represented by the general formula (12) with each other may be used.

[0052] X 1 From the viewpoint of Young's modulus and chemical resistance, X is preferably a tetravalent organic group containing an aromatic group. 1 are represented by the following general formulas (2) to (5): [ka] [ka] [ka] (Wherein, R9 is 、 is an oxygen atom, a sulfur atom, a sulfonyl group, or a divalent organic group. [ka] It is preferable that the tetravalent organic group contains at least one structure represented by the following formula:

[0053] R9 in the general formula (4) may be, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom, and R9 may contain a hydroxyl group.

[0054] X in general formula (1) 1 From the viewpoint of developability, the compound represented by the following general formula (6): [ka] A tetravalent organic group containing a structure represented by the following formula is particularly preferred.

[0055] Y 1 From the viewpoint of Young's modulus and chemical resistance, Y is preferably a divalent organic group containing an aromatic group. 1 are represented by the following general formulas (7) to (9): [ka] (In the formula, R 10 , R 11 , R 12 and R 13 are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. [ka] (In the formula, R 14 ~R 21 are each independently a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. [ka] (In the formula, R 22 is a divalent organic group or an oxygen atom, and R 23 ~R 30 are each independently a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different from each other; k is an integer of 1 to 3; when k is 2 or 3, R 22 , R 23 , R24 ,R 27 , R 28 may be the same or different.) It is preferable that the divalent organic group contains at least one structure represented by the following formula:

[0056] R in general formula (9) 22 is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

[0057] From the viewpoint of developability, Y 1 is represented by the following general formula (10): [ka] A divalent organic group containing a structure represented by the following formula is particularly preferred.

[0058] In the polyamic acid ester, X in the repeating unit 1 is derived from the tetracarboxylic dianhydride used as a raw material, and Y 1 is derived from the diamine used as a raw material.

[0059] The tetracarboxylic dianhydride used as a raw material may be, for example, pyromellitic dianhydride (PMDA), diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride (4 ,4'-oxydiphthalic dianhydride (ODPA), benzophenone-3,3',4,4'-tetracarboxylic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA), diphenylsulfone-3,3',4,4'-tetracarboxylic dianhydride (DSDA), diphenylmethane-3,3',4,4'-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (6FDA), 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride (BPADA), etc. These may be used alone or in combination of two or more.

[0060] Examples of diamines used as raw materials include p-phenylenediamine (PPD), m-phenylenediamine, 4,4'-diaminodiphenyl ether (DADPE), 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diamino-2,2'-dimethylbiphenyl (m-TB), 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 3,3'-Diaminodiphenyl sulfone, 4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4 -(4-aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, 4,4-bis(4-aminophenoxy)biphenyl, 4,4-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 9,10-bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane , 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 1,4-bis(3-aminopropyldimethylsilyl)benzene, ortho-tolidine sulfone, 9,9-bis(4-aminophenyl)fluorene, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl (TFMB), 2,2-bis[4-(4-aminophenoxy)phenyl]propane (BAPP), 2,2-bis[4-(4-aminophenoxy)-3-methylphenyl]propane (MBAPP) and the like. Some of the hydrogen atoms on the benzene ring may be substituted. These may be used alone or in combination of two or more.

[0061] By using PMDA, BPDA, or the like as the acid anhydride, the glass transition temperature of the insulating layer tends to be increased. By using PPD, m-TB, or the like as the diamine, the glass transition temperature of the insulating layer tends to be increased.

[0062] In the synthesis of the polyamic acid ester (A), a method can be preferably used in which a tetracarboxylic acid diester obtained by an esterification reaction of a tetracarboxylic acid dianhydride, which will be described later, is directly subjected to a condensation reaction with a diamine.

[0063] The alcohols used in the esterification reaction of the tetracarboxylic dianhydride are alcohols having an olefinic double bond. Specific examples include 2-hydroxyethyl methacrylate, 2-methacryloyloxyethyl alcohol, glycerin diacrylate, and glycerin dimethacrylate. These alcohols may be used alone or in combination of two or more.

[0064] A specific synthesis method for the polyamic acid ester (A) can be a conventionally known method. Examples of the synthesis method include the method disclosed in International Publication No. 00 / 43439. Specifically, a method can be used in which a tetracarboxylic acid diester is first converted into a tetracarboxylic acid diester diacid chloride, and then the tetracarboxylic acid diester diacid chloride and a diamine are subjected to a condensation reaction in the presence of a basic compound to produce a polyamic acid ester. Another example can be a method in which a tetracarboxylic acid diester and a diamine are subjected to a condensation reaction in the presence of an organic dehydrating agent to produce a polyamic acid ester.

[0065] Examples of organic dehydrating agents include dicyclohexylcarbodiimide (DCC), diethylcarbodiimide, diisopropylcarbodiimide, ethylcyclohexylcarbodiimide, diphenylcarbodiimide, 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide, and 1-cyclohexyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride.

[0066] The weight average molecular weight of the polyamic acid ester (A) is preferably 6,000 to 150,000, more preferably 7,000 to 50,000, and even more preferably 7,000 to 20,000.

[0067] (Polymers containing polyimide moieties and polyimide precursor moieties in the polymer structure) As a polymer having a polyimide moiety and a polyimide precursor moiety in the polymer structure, a polyimide precursor having a polyimide moiety in part can be used. Such a precursor can be, for example, a polyimide precursor represented by the following general formula (15): [ka] (In the formula, X1, X2, and X3 are each independently a tetravalent organic group having 6 to 40 carbon atoms; Y1 and Y2 are each independently a divalent organic group having 6 to 40 carbon atoms; n1 is an integer of 2 to 30; n2 and n3 are each independently an integer of 2 to 150; R1, R2, R3, and R4 are each independently a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms; and at least one of R1, R2, R3, and R4 is a structure including the general formula (13) or (14) above.) It includes a structure represented by:

[0068] In the general formula (15), n2 / (n2+n3) is preferably within the range of 0.05≦n2 / (n2+n3)≦0.95. From the viewpoint of flatness, n2 / (n2+n3) is preferably 0.1 or more, more preferably 0.2 or more, and particularly preferably 0.45 or more. From the viewpoint of resolution, n2 / (n2+n3) is preferably 0.9 or less, more preferably 0.8 or less, and particularly preferably 0.7 or less. The preferred ranges of X1, X2 and X3 in formula (15) are 1 The preferred ranges of Y1 and Y2 in formula (15) are the same as those of Y in formula (12). 1 The preferred range is the same as that of the above.

[0069] (Solvent-soluble polyimide) The solvent-soluble polyimide of the present disclosure may be any polyimide as long as it is soluble in a solvent. [ka] (In the formula, X 1 is a tetravalent organic group derived from tetracarboxylic dianhydride, and Y 1 is a divalent organic group derived from a diamine, and m is an integer of 1 or greater. It is preferable that the polyimide contains a polyimide having the structure:

[0070] In formula (1), X1 may be a tetravalent organic group having 6 to 40 carbon atoms in addition to the above, Y1 may be a divalent organic group having 6 to 40 carbon atoms in addition to the above, and m is preferably 2 or more, more preferably 5 or more. 1 is preferably a tetravalent organic group containing an aromatic ring, and Y 1 is preferably a divalent organic group containing an aromatic ring.

[0071] The preferred range of X1 in formula (1) is the same as the preferred range of X1 in formula (12), and the preferred range of Y1 in formula (1) is the same as the preferred range of Y1 in formula (12). 1 From the viewpoint of resolution, the solvent-soluble polyimide of the present disclosure preferably contains a radical-reactive functional group at its terminal.

[0072] (B1) Photoinitiator When the resin composition used to form the protective layer and the insulating layer is a negative photosensitive resin composition, the composition may contain a photoinitiator. Examples of the photoinitiator (B1) include benzophenone derivatives such as benzophenone, methyl o-benzoylbenzoate, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, and fluorenone; acetophenone derivatives such as 2,2'-diethoxyacetophenone and 2-hydroxy-2-methylpropiophenone; thioxanthone derivatives such as 1-hydroxycyclohexylphenyl ketone, thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, and diethylthioxanthone; benzyl derivatives such as benzil, benzil dimethyl ketal, and benzyl-β-methoxyethyl acetal; benzoin derivatives such as benzoin methyl ether; azides such as 2,6-di(4'-diazidobenzal)-4-methylcyclohexanone and 2,6'-di(4'-diazidobenzal)cyclohexanone; Butanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-ethoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-benzoyl)oxime, 1,3-diphenylpropanetrione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-3-ethoxypropanetrione-2-(O-benzoyl)oxime Examples of suitable photoinitiators include oximes such as 1,2-propanedione-3-cyclopentyl-1-[4-(phenylthio)phenyl]-2-(O-benzoyloxime), 1-[4-(phenylthio)phenyl]-3-propane-1,2-dione-2-(O-acetyloxime), N-arylglycines such as N-phenylglycine, peroxides such as benzoyl peroxide, aromatic biimidazoles, and titanocenes. Among these, the above-mentioned oximes are preferred from the viewpoint of photosensitivity. The photoinitiator (B1) may be used alone or in combination of two or more.

[0073] The amount of the photoinitiator (B1) added is preferably 1 to 40 parts by mass, more preferably 2 to 20 parts by mass, per 100 parts by mass of the polyamic acid ester (A). Adding 1 part by mass or more of the photoinitiator (B1) per 100 parts by mass of the polyamic acid ester (A) tends to provide excellent photosensitivity. Adding 40 parts by mass or less tends to provide excellent thick-film curability.

[0074] (B2) Photoacid generator The photoacid generator (B2) has the function of increasing the solubility of the irradiated portion in an aqueous alkaline solution. When the resin composition used to form the protective layer and the insulating layer is a positive-type photosensitive resin, the composition may contain a photoacid generator. The photoacid generator generates acid in the ultraviolet-exposed area, thereby increasing the solubility of the exposed area in an alkaline aqueous solution. This allows the composition to be used as a positive-type photosensitive resin composition.

[0075] Examples of the photoacid generator (B2) include quinone diazide compounds, sulfonium salts, phosphonium salts, diazonium salts, iodonium salts, etc. Among these, quinone diazide compounds are preferably used from the viewpoint of exhibiting an excellent dissolution inhibiting effect and obtaining a highly sensitive positive-type photosensitive resin composition.

[0076] (C) Additives As described above, the glass transition temperature of the insulating layer can be adjusted by the polymer structure in the insulating layer, and can also be adjusted by the type or amount of additive. The use of a (meth)acrylate compound containing a halogen atom such as a fluorine atom as an additive tends to lower the glass transition temperature. Examples of such compounds include methyl 2-fluoroacrylate, 2,2,2-trifluoroethyl acrylate, 2,2,3,3,3-pentafluoropropyl acrylate, 2-(perfluorobutyl)ethyl acrylate, 3-perfluorohexyl-2-hydroxypropyl acrylate, 1H,1H,3H-tetrafluoropropyl acrylate, 1H,1H,5H-octafluoropentyl acrylate, 1H,1H,7H-dodecafluoroheptyl acrylate, 1H-1-(trifluoromethyl)trifluoroethyl acrylate, and 1H,1H,3H-hexafluorobutyl acrylate. The glass transition temperature tends to be increased by using a compound such as a plasticizer as an additive that can improve the packing between polymers during heat curing. Examples of such plasticizers include dicyclohexyl phthalate, diphenylphthalate, di-2-ethylhexyl dicyclohexyl trimellitate, dicyclohexyl pyromellitate, and dicyclohexyl adipate.

[0077] As the crosslinking agent, a compound having a plurality of functional groups such as an epoxy group, an oxetanyl group, a methylol group, an alkoxymethyl group, or the like can be used.

[0078] The epoxy group-containing compound (epoxy compound) that can be used as a crosslinking agent may be a compound having two or more epoxy groups, and preferably a compound having 2 to 100 epoxy groups. The upper limit of the number of epoxy groups may be, for example, 10 or less, or 5 or less. Examples of epoxy compounds include bisphenol A type epoxy resins; bisphenol F type epoxy resins; alkylene glycol type epoxy resins such as propylene glycol diglycidyl ether; polyalkylene glycol type epoxy resins such as polypropylene glycol diglycidyl ether; and epoxy group-containing silicones such as polymethyl(glycidyloxypropyl)siloxane.

[0079] Examples of compounds having an oxetanyl group (oxetane compounds) that can be used as crosslinking agents include 3-ethyl-3-hydroxymethyloxetane, 1,4-bis{[(3-ethyl-3-oxetanyl)methoxy]methyl}benzene, 3-ethyl-3-(2-ethylhexylmethyl)oxetane, and 1,4-benzenedicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl]ester. Commercially available products include the Aron Oxetane series (e.g., OXT-121, OXT-221, OXT-191, and OXT-223) manufactured by Toagosei Co., Ltd. Examples of compounds having a methylol group or an alkoxymethyl group (methylol compounds or alkoxymethyl group compounds) that can be used as crosslinking agents may be thermosetting compounds, and examples thereof include compounds having the following structure: Commercially available products include 46MOC, 46DMOEP, TM-BIP-A (manufactured by Asahi Organic Chemicals Co., Ltd.), DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP, dimethylolBisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC, TriML-P, TriML-35XL, and TML-HQ. , TML-BP, TML-pp-BPF, TML-BPA, TMOM-BP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (manufactured by Honshu Chemical Industry Co., Ltd.), NIKALACMX-290, NIKALACMX-280, NIKALACMX-270 (tetrakis(methoxymethyl)glycoluril), NIKALACMW-100LM (manufactured by Sanwa Chemical Co., Ltd.) etc. Among these, from the viewpoint of chemical resistance etc., compounds having an alkoxymethyl group are preferred, and tetrakis(methoxymethyl)glycoluril is particularly preferred.

[0080] Preferred examples of crosslinking agents include compounds with excellent photosensitivity, such as unsubstituted chlorins (commonly referred to as "chlorins") and substituted chlorins (chlorins with optional substituents). Examples of chlorins include cyclic structures having a total of four nitrogen atoms and a total of two substitutable hydrogen atoms, and consisting of a total of three unsaturated pyrrole rings and a total of one saturated pyrrole ring. Here, the hydrogen atoms may be substituted with various metal atoms, and the nitrogen atoms may form complexes with various metal atoms.

[0081] The additives include silane coupling agents, such as 3-glycidoxypropyltrimethoxysilane, γ-aminopropyldimethoxysilane, N-(β-aminoethyl)-γ-aminopropylmethyldimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, 3-methacryloxypropyldimethoxymethylsilane, 3-methacryloxypropyltrimethoxysilane, dimethoxymethyl-3-piperidinopropylsilane, diethoxy-3-glycidoxypropylmethylsilane, N-(3-diethoxymethylsilylpropyl)succinimide, N-[3-(triethoxysilyl)propyl]propanol ... Examples of silane coupling agents include 3-(triethoxysilyl)propylphthalamic acid, benzophenone-3,3'-bis(N-[3-triethoxysilyl]propylamido)-4,4'-dicarboxylic acid, benzene-1,4-bis(N-[3-triethoxysilyl]propylamido)-2,5-dicarboxylic acid, 3-(triethoxysilyl)propyl succinic anhydride, N-phenylaminopropyltrimethoxysilane, 3-ureidopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, and 3-(trialkoxysilyl)propyl succinic anhydride. From the viewpoint of storage stability of the photosensitive resin composition, 3-glycidoxypropyltrimethoxysilane, 3-methacryloxypropyldimethoxymethylsilane, and 3-methacryloxypropyltrimethoxysilane are preferred.

[0082] (D) Solvent The solvent may be any solvent capable of dissolving or dispersing each component. Examples include N-methyl-2-pyrrolidone (NMP), γ-butyrolactone (GBL), acetone, methyl ethyl ketone, dimethyl sulfoxide (DMSO), etc. These solvents can be used in an amount of 30 to 1500 parts by mass per 100 parts by mass of the photosensitive resin (A) depending on the coating film thickness and viscosity.

[0083] (E) Other The photosensitive resin (A) may contain a crosslinking agent. The crosslinking agent may be one that can crosslink the photosensitive resin (A) when the polyimide precursor composition is exposed to light, developed, and then heat-cured, or one that can itself form a crosslinked network. The use of a crosslinking agent can further enhance the heat resistance and chemical resistance of the cured film (insulating layer).

[0084] In addition, the photosensitive resin (A) may contain a sensitizer for improving photosensitivity, an adhesion promoter for improving adhesion to the substrate, a polymerization inhibitor, etc. Examples of polymerization inhibitors include hydroquinone, p-methoxyphenol, di-tert-butyl-p-cresol, pyrogallol, p-tert-butylcatechol, 1,4-benzoquinone, diphenyl-p-benzoquinone, 4,4'-thiobis(3-methyl-6-tert-butylphenol), 2,2'-methylenebis(4-methyl-6-tert-butylphenol), N-nitroso-N-phenylhydroxyamine aluminum salt, phenothiazine, N-nitrosodiphenylamine, and N-phenylnaphthylamine. , ethylenediaminetetraacetic acid, 1,2-cyclohexanediaminetetraacetic acid, glycol ether diaminetetraacetic acid, 2,6-di-tert-butyl-4-methylphenol, 5-nitroso-8-hydroxyquinoline, 1-nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamino)phenol, N-nitroso-N-(1-naphthyl)hydroxyamine ammonium salt, bis(4-hydroxy-3,5-tert-butyl)phenylmethane, and the like are preferably used.

[0085] (exposure and development) After the polyimide precursor is exposed to light, the unnecessary portions are washed away with a developer. For polyimide precursors developed with a solvent, the developer used may be a good solvent such as N,N-dimethylformamide, dimethyl sulfoxide (DMSO), N,N-dimethylacetamide, N-methyl-2-pyrrolidone (NMP), cyclopentanone, γ-butyrolactone (GBL), or acetic esters, or a mixture of these good solvents with a poor solvent such as a lower alcohol, water, or aromatic hydrocarbon. After development, the substrate may be rinsed with a poor solvent, if necessary.

[0086] In the case of a polyimide precursor that is developed with an alkaline aqueous solution, preferred are aqueous solutions of compounds that exhibit alkalinity, such as an aqueous solution of tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine.

[0087] (thermal curing) After development, the exposed polyimide precursor can be heated to close the ring of the polyimide precursor, thereby forming a polyimide, which becomes the cured relief pattern, i.e., the insulating layer.

[0088] Regarding the heating temperature for thermal curing of a polyimide precursor, generally, the higher the heat curing temperature, the higher the Young's modulus tends to be. From the viewpoint of achieving a desired Young's modulus for the insulating layer of the present disclosure, the heating temperature is preferably 160°C or higher, more preferably 180°C or higher, and particularly preferably 200°C or higher. From the viewpoint of the influence on other components, the heating temperature is preferably 400°C or lower.

[0089] <Polyimide> The structure of the cured relief pattern formed from the polyimide precursor, for example, at least one of the protective layer and the insulating layer, is represented by the following general formula (1): [ka] (In the formula, X 1 is a tetravalent organic group derived from tetracarboxylic dianhydride, and Y 1 is a divalent organic group derived from a diamine, and m is an integer of 1 or greater. For example, the polyimide includes a polyimide having the structure of X in formula (1). 1 is preferably a tetravalent organic group containing an aromatic ring, and Y 1 is preferably a divalent organic group containing an aromatic ring. 1 , Y 1 For the same reason, m is also preferred in the polyimide represented by general formula (1).

[0090] In the case of an alkali-soluble polyimide, the terminal of the polyimide may be a hydroxyl group. When the protective layer of the present disclosure contains a polyimide, the IR spectrum measured by the attenuated total reflection (ATR) method shows a peak at 1380 cm -1 The peak height around 1500cm -1 The peak height and the peak ratio (1380 cm -1 Near peak height: 1500cm -1 The "peak height near 1380 cm" is preferably 1.2 to 2.5. From the viewpoint of chemical resistance, it is preferably 1.3 or more, more preferably 1.4 or more, and particularly preferably 1.5 or more. From the viewpoint of developability, it is preferably 2.4 or less, more preferably 2.3 or less, and particularly preferably 2.2 or less. -1 The peak height in the vicinity of 1330-1430 cm -1 The maximum peak height within the range of 1500 cm -1 The peak height in the vicinity of 1450-1550 cm -1 is the maximum peak height within the range.

[0091] When the insulating layer of the present disclosure contains polyimide, the IR spectrum measured by the attenuated total reflection (ATR) method is -1 The peak height around 1500cm -1 The peak height and the peak ratio (1380 cm -1 Near peak height: 1500cm -1 The peak height (height near the peak) is preferably 0.2 to 2.5. From the viewpoint of chemical resistance, it is preferably 0.3 or more, more preferably 0.4 or more, and particularly preferably 0.5 or more. From the viewpoint of developability, it is preferably 1.0 or less, more preferably 0.7 or less, and particularly preferably 0.6 or less. The "1380cm" -1 The peak height in the vicinity of 1330-1430 cm -1 The maximum peak height within the range of 1500 cm -1 The peak height in the vicinity of 1450-1550 cm -1 is the maximum peak height within the range.

[0092] <Polybenzoxazole precursor> (A) Photosensitive resin The photosensitive resin used for the polybenzoxazole precursor may be a resin represented by the following general formula (11A): [ka] (In the formula, Y 2 and Y 3 is a divalent organic group. Poly(o-hydroxyamide) containing a repeating unit represented by the following formula can be used.

[0093] From the viewpoint of adhesion between the insulating layer and the encapsulant, Y 2 is preferably a divalent organic group having 1 to 30 carbon atoms, more preferably a chain alkylene group having 1 to 15 carbon atoms (however, the hydrogen atoms of the chain alkylene may be substituted with halogen atoms), and particularly preferably a chain alkylene group having 1 to 8 carbon atoms and in which some or all of the hydrogen atoms have been substituted with fluorine atoms.

[0094] Y in the above general formula (11A) 3 From the viewpoint of adhesion between the insulating layer and the sealing material, the divalent organic group having 1 to 40 carbon atoms is preferable, the divalent chain aliphatic group having 1 to 40 carbon atoms is more preferable, and the divalent chain aliphatic group having 1 to 20 carbon atoms is particularly preferable.

[0095] In addition, from the viewpoint of adhesion between the insulating layer and the sealing material, Y 3 is preferably a divalent organic group containing an aromatic group, and more preferably is a group represented by the following general formulas (7) to (9):

[0096] [ka] (In the formula, R 10 , R 11 , R 12 and R 13 are each independently a hydrogen atom or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different.

[0097] [ka] (In the formula, R 14 ~R 21 are each independently a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be the same or different.

[0098] [ka] (In the formula, R 22 is a divalent organic group or an oxygen atom, and R 23 ~R 30 are each independently a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different from each other; k is an integer of 1 to 3; when k is 2 or 3, R 22 , R 23 , R 24 ,R 27 , R 28 may be the same or different.) It is preferable that the divalent organic group contains at least one structure represented by the following formula:

[0099] R in general formula (9) 22 may be, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

[0100] From the viewpoint of adhesion between the insulating layer and the sealing material, Y 3 is represented by the following general formula (10): [ka] A divalent organic group containing a structure represented by the following formula is particularly preferred.

[0101] Polybenzoxazole precursors can generally be synthesized from dicarboxylic acid derivatives and hydroxyl-containing diamines. Specifically, they can be synthesized by converting the dicarboxylic acid derivatives into dihalide derivatives and then reacting them with diamines. As the dihalide derivatives, dichloride derivatives are preferred.

[0102] The dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with a halogenating agent, such as thionyl chloride, phosphoryl chloride, phosphorus oxychloride, or phosphorus pentachloride, which are commonly used in acid chloride reactions of carboxylic acids.

[0103] The dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with the above-mentioned halogenating agent in a solvent, or by reacting in an excess amount of the halogenating agent and then distilling off the excess.

[0104] Examples of dicarboxylic acids used in the dicarboxylic acid derivative include isophthalic acid, terephthalic acid, 2,2-bis(4-carboxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 4,4'-dicarboxybiphenyl, 4,4'-dicarboxydiphenyl ether (4,4'-diphenyl ether dicarboxylic acid), 4,4'-dicarboxytetraphenylsilane, bis(4-carboxyphenyl)sulfone, 2,2-bis(p-carboxyphenyl)propane, 5-tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalenedicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, and hexafluoroglutamic acid. carboxylic acid, 2-methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid, octafluoroadipic acid, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid, hexadecafluorosebacic acid, 1,9-nonanedioic acid, dodecanedioic acid, tridecanoic acid Examples of the dicarboxylic acid include benzoic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosaneedioic acid, heneicosaneedioic acid, docosaneedioic acid, tricosaneedioic acid, tetracosaneedioic acid, pentacosaneedioic acid, hexacosaneedioic acid, heptacosaneedioic acid, octacosaneedioic acid, nonacosaneedioic acid, triacontanedioic acid, hentriacontanedioic acid, dotriacontanedioic acid, diglycolic acid, and dicyclopentadienecarboxylic acid. These may be used in combination.

[0105] Examples of hydroxy group-containing diamines include 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, bis(3-amino-4-hydroxyphenyl)propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(4-amino-3-hydroxyphenyl)sulfone, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 2,2-bis(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, etc. These may also be used in combination.

[0106] (B2) Photoacid generator Examples of the photoacid generator (B2) include diazonaphthoquinone compounds, aryldiazonium salts, diaryliodonium salts, triarylsulfonium salts, etc. Among these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

[0107] (C) Additives The preferred types and amounts of the additive (C) are the same as those described in relation to the {polyimide precursor}.

[0108] (D) Solvent The solvent (D) may be any solvent capable of dissolving or dispersing each component.

[0109] (E) Other The polybenzoxazole precursor may contain a crosslinking agent, a sensitizer, an adhesion promoter, a thermal acid generator, etc. The polybenzoxazole precursor may contain necessary additives in addition to the above.

[0110] (exposure and development) After the polybenzoxazole precursor is exposed to light, unnecessary portions are washed away with a developer, such as an aqueous alkali solution of sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, or tetramethylammonium hydroxide.

[0111] Although the above description has focused on positive polybenzoxazole precursors, negative polybenzoxazole precursors may also be used.

[0112] (thermal curing) After development, the polybenzoxazole precursor can be heated to close the ring of the polybenzoxazole precursor, thereby forming polybenzoxazole, which becomes the cured relief pattern, i.e., insulating layer 6.

[0113] The heating temperature for thermal curing of the polybenzoxazole precursor is preferably low in view of the influence on other components, and is preferably 250°C or lower, more preferably 230°C or lower, still more preferably 200°C or lower, and particularly preferably 180°C or lower.

[0114] <Polybenzoxazole> The structure of the cured relief pattern formed from the polybenzoxazole precursor is represented by the following general formula (11): [ka] (In the formula, U and V each independently represent a divalent organic group.) The polybenzoxazole includes the above polybenzoxazole having the structure:

[0115] U in the general formula (11) is Y in the general formula (11A). 2 V in the general formula (11) may be the same as Y in the general formula (11A). 3 Preferred Y in general formula (11A) may be the same as 2 , Y3 is also preferred for U and V in general formula (11) for the same reason.

[0116] <Polymer having a phenolic hydroxyl group> (A) Photosensitive resin The polymer having a phenolic hydroxyl group of the present disclosure is a resin having a phenolic hydroxyl group in the molecule and is soluble in alkali. Specific examples include vinyl polymers containing a monomer unit having a phenolic hydroxyl group, such as poly(hydroxystyrene), phenolic resins, poly(hydroxyamide), poly(hydroxyphenylene) ether, and polynaphthol. Among these, phenolic resins are preferred because of their low cost and small volume shrinkage upon curing, and novolac-type phenolic resins are particularly preferred.

[0117] Phenolic resins are polycondensation products of phenol or its derivatives with aldehydes. The polycondensation is carried out in the presence of a catalyst such as an acid or a base. Phenolic resins obtained using an acid catalyst are specifically called novolak-type phenolic resins.

[0118] Examples of phenol derivatives include phenol, cresol, ethylphenol, propylphenol, butylphenol, amylphenol, benzylphenol, adamantanephenol, benzyloxyphenol, xylenol, catechol, resorcinol, ethylresorcinol, hexylresorcinol, hydroquinone, pyrogallol, phloroglucinol, 1,2,4-trihydroxybenzene, pararosolic acid, biphenol, bisphenol A, bisphenol AF, bisphenol B, bisphenol F, and bisphenol S. , dihydroxydiphenylmethane, 1,1-bis(4-hydroxyphenyl)cyclohexane, 1,4-bis(3-hydroxyphenoxybenzene), 2,2-bis(4-hydroxy-3-methylphenyl)propane, α,α'-bis(4-hydroxyphenyl)-1,4-diisopropylbenzene, 9,9-bis(4-hydroxy-3-methylphenyl)fluorene, 2,2-bis(3-cyclohexyl-4-hydroxyphenyl)propane, 2,2-bis(2-hydroxy-5-biphenylyl)propane, dihydroxybenzoic acid, and the like.

[0119] Examples of aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, pivalaldehyde, butyraldehyde, pentanal, hexanal, trioxane, glyoxal, cyclohexylaldehyde, diphenylacetaldehyde, ethylbutyraldehyde, benzaldehyde, glyoxylic acid, 5-norbornene-2-carboxaldehyde, malondialdehyde, succindialdehyde, glutaraldehyde, salicylaldehyde, naphthaldehyde, and terephthalaldehyde.

[0120] The photosensitive resin (A) preferably contains component (a): a phenolic resin having no unsaturated hydrocarbon groups, and component (b): a modified phenolic resin having unsaturated hydrocarbon groups. Component (b) is more preferably further modified by reaction of the phenolic hydroxyl groups with a polybasic acid anhydride.

[0121] Furthermore, as component (b), it is preferable to use a phenolic resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms, from the viewpoint of further improving mechanical properties (elongation at break, elastic modulus, and residual stress).

[0122] (b) Modified phenolic resins having unsaturated hydrocarbon groups are generally reaction products of phenol or its derivatives with compounds having unsaturated hydrocarbon groups (preferably those having 4 to 100 carbon atoms) (hereinafter sometimes simply referred to as "unsaturated hydrocarbon group-containing compounds") (hereinafter referred to as "unsaturated hydrocarbon group-modified phenol derivatives") and aldehydes, or reaction products of phenolic resins with unsaturated hydrocarbon group-containing compounds.

[0123] The phenol derivatives used here may be the same as the phenol derivatives described above as raw materials for the phenol resin used as the (A) photosensitive resin.

[0124] The unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated groups from the viewpoints of adhesion of the resist pattern and thermal shock resistance. Furthermore, from the viewpoints of compatibility when formed into a resin composition and flexibility of the cured film, the unsaturated hydrocarbon group-containing compound preferably has 8 to 80 carbon atoms, more preferably 10 to 60 carbon atoms.

[0125] Examples of unsaturated hydrocarbon group-containing compounds include unsaturated hydrocarbons having 4 to 100 carbon atoms, polybutadiene having a carboxyl group, epoxidized polybutadiene, linolyl alcohol, oleyl alcohol, unsaturated fatty acids, and unsaturated fatty acid esters. Suitable unsaturated fatty acids include crotonic acid, myristoleic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, gadoleic acid, erucic acid, nervonic acid, linoleic acid, α-linolenic acid, eleostearic acid, stearidonic acid, arachidonic acid, eicosapentaenoic acid, sardine acid, and docosahexaenoic acid. Among these, esters of unsaturated fatty acids having 8 to 30 carbon atoms and monohydric to trihydric alcohols having 1 to 10 carbon atoms are more preferred, and esters of unsaturated fatty acids having 8 to 30 carbon atoms and the trihydric alcohol glycerin are particularly preferred.

[0126] Esters of unsaturated fatty acids having 8 to 30 carbon atoms and glycerin are commercially available as vegetable oils. Vegetable oils include non-drying oils with an iodine value of 100 or less, semi-drying oils with an iodine value of more than 100 but less than 130, and drying oils with an iodine value of 130 or more. Examples of non-drying oils include olive oil, morning glory seed oil, cashew seed oil, camellia oil, castor oil, and peanut oil. Examples of semi-drying oils include corn oil, cottonseed oil, and sesame oil. Examples of drying oils include tung oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, perilla oil, and mustard oil. Processed vegetable oils obtained by processing these vegetable oils may also be used.

[0127] Among the above vegetable oils, it is preferable to use non-drying oils from the viewpoint of preventing gelation due to excessive reaction in the reaction between phenol or its derivatives or phenolic resins and vegetable oils, and improving yield. On the other hand, it is preferable to use drying oils from the viewpoint of improving the adhesion, mechanical properties, and thermal shock resistance of the resist pattern. Among drying oils, tung oil, linseed oil, soybean oil, walnut oil, and safflower oil are preferred, and tung oil and linseed oil are more preferred, as they can more effectively and reliably exhibit the effects of the present disclosure.

[0128] These unsaturated hydrocarbon group-containing compounds may be used singly or in combination of two or more.

[0129] To prepare component (b), the phenol derivative is first reacted with the unsaturated hydrocarbon group-containing compound to produce an unsaturated hydrocarbon group-modified phenol derivative. The reaction is preferably carried out at 50 to 130°C. From the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio of the phenol derivative and the unsaturated hydrocarbon group-containing compound is preferably 1 to 100 parts by mass, more preferably 5 to 50 parts by mass, of the unsaturated hydrocarbon group-containing compound per 100 parts by mass of the phenol derivative. If the amount of the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, while if it exceeds 100 parts by mass, the heat resistance of the cured film tends to decrease. In the reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst, if necessary.

[0130] The unsaturated hydrocarbon group-modified phenol derivative produced by the above reaction is polycondensed with an aldehyde to produce a phenolic resin modified with the unsaturated hydrocarbon group-containing compound. The aldehyde may be the same as the aldehyde used to obtain the phenolic resin described above.

[0131] The reaction between the aldehydes and the unsaturated hydrocarbon group-modified phenol derivative is a polycondensation reaction, and conventionally known synthesis conditions for phenolic resins can be used. The reaction is preferably carried out in the presence of a catalyst such as an acid or a base, and more preferably an acid catalyst is used. Examples of acid catalysts include hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid, and oxalic acid. These acid catalysts can be used alone or in combination of two or more.

[0132] The reaction is preferably carried out at a temperature of 100 to 120°C. The reaction time varies depending on the type and amount of catalyst used, but is usually 1 to 50 hours. After the reaction is completed, the reaction product is dehydrated under reduced pressure at a temperature of 200°C or less to obtain a phenolic resin modified with an unsaturated hydrocarbon group-containing compound. A solvent such as toluene, xylene, or methanol can be used for the reaction.

[0133] The phenolic resin modified with an unsaturated hydrocarbon group-containing compound can also be obtained by polycondensing the above-mentioned unsaturated hydrocarbon group-modified phenol derivative with an aldehyde together with a compound other than phenol, such as m-xylene. In this case, the molar ratio of the compound other than phenol to the compound obtained by reacting the phenol derivative with the unsaturated hydrocarbon group-containing compound is preferably less than 0.5.

[0134] Component (b) can also be obtained by reacting the phenolic resin of component (a) with an unsaturated hydrocarbon group-containing compound. The unsaturated hydrocarbon group-containing compound to be reacted with the phenolic resin can be the same as the unsaturated hydrocarbon group-containing compound described above.

[0135] The reaction between the phenolic resin and the unsaturated hydrocarbon group-containing compound is preferably carried out at 50 to 130°C. Furthermore, from the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio between the phenolic resin and the unsaturated hydrocarbon group-containing compound is preferably 1 to 100 parts by mass of the unsaturated hydrocarbon group-containing compound per 100 parts by mass of the phenolic resin, more preferably 2 to 70 parts by mass, and even more preferably 5 to 50 parts by mass. If the amount of the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease. If the amount is more than 100 parts by mass, the possibility of gelation during the reaction tends to increase, and the heat resistance of the cured film tends to decrease. In this case, if necessary, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst. Solvents such as toluene, xylene, methanol, and tetrahydrofuran can be used for the reaction.

[0136] The phenolic hydroxyl groups remaining in the phenolic resin modified with the unsaturated hydrocarbon group-containing compound produced by the above method are further reacted with a polybasic acid anhydride. This acid-modified phenolic resin can also be used as component (b). Acid modification with a polybasic acid anhydride introduces carboxyl groups, further improving the solubility of component (b) in an aqueous alkaline solution (developer).

[0137] The polybasic acid anhydride may have an acid anhydride group formed by dehydration condensation of the carboxy groups of a polybasic acid having a plurality of carboxy groups. Examples of the polybasic acid anhydride include dibasic acid anhydrides such as phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride, and trimellitic anhydride, and aromatic tetrabasic acid dianhydrides such as biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenylethertetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic anhydride, and benzophenonetetracarboxylic dianhydride. These may be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride. In this case, there is an advantage that a resist pattern with a better shape can be formed.

[0138] Furthermore, the (A) photosensitive resin may further contain a phenolic resin that has been acid-modified by reacting it with a polybasic acid anhydride. When the (A) photosensitive resin contains a phenolic resin that has been acid-modified with a polybasic acid anhydride, the solubility of the (A) photosensitive resin in an aqueous alkaline solution (developer) is further improved.

[0139] Examples of the polybasic acid anhydride include dibasic acid anhydrides such as phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride, and trimellitic anhydride; and aliphatic and aromatic tetrabasic acid dianhydrides such as biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenylethertetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic anhydride, and benzophenonetetracarboxylic dianhydride. These may be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably, for example, one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride.

[0140] (B2) Photoacid generator Examples of the photoacid generator include diazonaphthoquinone compounds, aryldiazonium salts, diaryliodonium salts, triarylsulfonium salts, etc. Among these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

[0141] (C) Additives The preferred types and amounts of the additive (C) are the same as those described in relation to the polyimide.

[0142] (D) Solvent The solvent (D) may be any solvent capable of dissolving or dispersing each component.

[0143] (E) Other The composition may contain a thermal crosslinking agent, a sensitizer, an adhesion promoter, a dye, a surfactant, a dissolution promoter, a crosslinking promoter, etc. Among these, by including a thermal crosslinking agent, when the photosensitive resin film after pattern formation is heated and cured, the thermal crosslinking agent component reacts with the photosensitive resin (A) to form a crosslinked structure. This enables curing at low temperatures and prevents the film from becoming brittle or melting. Specific examples of the thermal crosslinking agent component that can be used preferably include compounds having a phenolic hydroxyl group, compounds having a hydroxymethylamino group, and compounds having an epoxy group.

[0144] (exposure and development) After the polymer having a phenolic hydroxyl group is exposed to light, unnecessary portions are washed away with a developer, such as an aqueous alkaline solution of sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, or tetramethylammonium hydroxide (TMAH).

[0145] (thermal curing) After development, the polymer having a phenolic hydroxyl group is heated to thermally crosslink the polymers having a phenolic hydroxyl group. The crosslinked polymer becomes a cured relief pattern, that is, the insulating layer 6.

[0146] The heating temperature for thermal curing of the polymer having a phenolic hydroxyl group is preferably low in view of the influence on other components, and is preferably 250°C or lower, more preferably 230°C or lower, still more preferably 200°C or lower, and particularly preferably 180°C or lower.

[0147] <<Method for manufacturing semiconductor device>> The manufacturing method of the semiconductor device 1 of the present disclosure includes a first step of preparing a plurality of semiconductor chips 2, a second step of covering the prepared semiconductor chips 2 with a sealing material so that at least a portion of the semiconductor chips 2 is exposed, and a third step of forming a redistribution layer 4 having an area larger than that of the semiconductor chips 2 in a planar view on the exposed surface side of the semiconductor chips 2, wherein the redistribution layer 4 includes an insulating layer 6 having a glass transition point of 240 to 320°C.

[0148] Here, the second step preferably includes a step of forming a protective layer on the semiconductor chip (protective layer forming step), and a step of covering the semiconductor chip with the protective layer formed thereon with an encapsulant so that at least a part of the protective layer is exposed (encapsulant forming step).Furthermore, the third step preferably includes a step of forming a redistribution layer on the protective layer side.

[0149] A method for manufacturing the semiconductor device 1 will be described with reference to FIG. 3. FIG. 3 shows an example of a manufacturing process for the semiconductor device 1. In FIG. 3A, a pre-processed wafer 10 is prepared. Then, a photosensitive resin composition (photosensitive composition for forming a protective layer) is applied, exposed to light, and developed to form a relief pattern (protective layer forming process). Then, in FIG. 3B, the wafer is diced to form a plurality of semiconductor chips 2. The semiconductor chips 2 prepared in this manner are attached to a support 11 at predetermined intervals, as shown in FIG. 3C.

[0150] Next, molding resin 12 is applied from above semiconductor chip 2 to above support 11, and mold sealing is performed as shown in FIG. 3D (sealing material forming process). Next, support 11 is peeled off, and molding resin 12 is inverted (see FIG. 3E). As shown in FIG. 3E, semiconductor chip 2 and molding resin 12 appear on approximately the same plane. Next, in the process shown in FIG. 3F, photosensitive resin composition 13 is applied onto semiconductor chip 2 and molding resin 12. Then, the applied photosensitive resin composition 13 is exposed and developed to form a relief pattern (relief pattern forming process). Note that photosensitive resin composition 13 may be either positive or negative. Furthermore, the relief pattern is heated to form a cured relief pattern (insulating layer forming process). Furthermore, wiring is formed in areas where the cured relief pattern is not formed (wiring forming process).

[0151] In the present disclosure, the relief pattern forming step, insulating layer forming step, and wiring forming step are combined together to form a rewiring layer connected to the semiconductor chip 2 .

[0152] The insulating layer in the rewiring layer may be multi-layered. Therefore, the rewiring layer forming process may include multiple relief pattern forming processes, multiple insulating layer forming processes, and multiple wiring forming processes. When multiple wiring forming processes are included, wiring 5a that electrically connects multiple semiconductor chips 2 together may be formed in at least one of the wiring forming processes.

[0153] Furthermore, the semiconductor device of the present disclosure preferably includes a stacked via structure in the redistribution layer. A stacked via is a structure in which via holes are stacked, and is distinguished from a staggered via in which via holes are formed in a stepped pattern in the thickness direction. The inclusion of this structure allows for higher wiring density. In the stacked via structure 9 in FIG. 1, via holes in the redistribution layer communicate in the thickness direction from the semiconductor chip 2 to the external connection terminal 7a directly below it, and the semiconductor chip 2 and the external connection terminal 7a are electrically connected by wiring 5 arranged in the via holes.

[0154] 3G, a plurality of external connection terminals 7 corresponding to each semiconductor chip 2 are formed (bump formation), and the semiconductor chips 2 are diced apart. This allows a semiconductor device (semiconductor IC) 1 to be obtained, as shown in FIG. 3H. In the present disclosure, a plurality of fan-out type semiconductor devices 1 can be obtained by the manufacturing method shown in FIG.

[0155] In the present disclosure, in the insulating layer forming step described above, it is preferable to form the insulating layer from a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[0156] Furthermore, when forming a protective layer, it is preferable to form such a protective layer from a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[0157] Other Embodiments Although the present disclosure has been described above, the aspects of the present disclosure are not limited to the above.

[0158] For example, the encapsulant may include a sealing member that surrounds the side surfaces of the semiconductor chip and a tape that overlaps the top surface of the semiconductor chip (the surface opposite to the surface on which the insulating layer is disposed). The sealing member may be in contact with the insulating layer and may include an epoxy resin.

[0159] 1 shows the semiconductor chip 2 including two chips arranged in parallel, the semiconductor chip may include three or more chips arranged in parallel. Furthermore, the protective layer 8 may be omitted. In this case, the semiconductor chip and the encapsulant form approximately the same surface, and a rewiring layer is disposed on this surface.

[0160] A further aspect of the present disclosure is an insulating layer 6 for use in forming a redistribution layer 4 in a semiconductor device 1 including a plurality of semiconductor chips 2, an encapsulating material 3 covering the semiconductor chips 2 so that at least a portion of the semiconductor chips 2 is exposed, and a redistribution layer 4 arranged on the side of the semiconductor chips 2 that is not covered by the encapsulating material 3 and has an area larger than that of the semiconductor chips 2 in a planar view, the insulating layer 6 having a glass transition point of 240 to 320°C.

[0161] Furthermore, a further aspect of the present disclosure is a redistribution layer 4 in a semiconductor chip 2 that includes a plurality of semiconductor chips 2 and an encapsulant 3 that covers the semiconductor chips 2 so that at least a portion of the semiconductor chips 2 is exposed, the redistribution layer 4 being arranged on the side not covered by the encapsulant 3 and having an area larger than that of the semiconductor chips 2 in a planar view, the redistribution layer 4 including wiring 5 electrically connected to the semiconductor chips 2 and an insulating layer 6 that is in contact with the wiring 5 and has a glass transition point of 240 to 320°C.

[0162] The preferred embodiment described with respect to the semiconductor device 1 may be similarly applied to the insulating layer 6 and the redistribution layer 4, which are a further embodiment of the present disclosure. In the insulating layer 6 and the redistribution layer 4, which are a further embodiment of the present disclosure, the wiring 5 includes wiring 5a for electrically connecting the plurality of semiconductor chips 2 to each other, similar to the case of the semiconductor device 1. [Example]

[0163] The present disclosure will be described with reference to examples and comparative examples. The following materials and measurement methods were used in the examples and comparative examples.

[0164] The abbreviations used in the examples and comparative examples are as follows: ODPA: 4,4'-oxydiphthalic dianhydride PMDA: Pyromellitic dianhydride DSDA: Diphenylsulfone-3,3',4,4'-tetracarboxylic dianhydride DADPE: 4,4'-diaminodiphenyl ether PPD: p-phenylenediamine m-TB: 4,4'-diamino-2,2'-dimethylbiphenyl BAFL: 9,9'-bis(4-aminophenyl)fluorene DCC: dicyclohexylcarbodiimide HEMA: 2-hydroxyethyl methacrylate GBL: gamma-butyrolactone NMP: N-methyl-2-pyrrolidone

[0165] [Synthesis example] (Polymer A-1: ​​Synthesis of polyimide precursor) 147.11 g of ODPA (tetracarboxylic dianhydride) was placed in a 2-liter separable flask. 128.4 g of HEMA and GBL were added, and while stirring at room temperature, pyridine (80 g) was further added to obtain a reaction mixture. After the exothermic reaction ceased, the mixture was allowed to cool to room temperature and left to stand for 16 hours.

[0166] Next, a solution of 192.7 g of DCC dissolved in GBL was added to the reaction mixture over 40 minutes while stirring under ice cooling. Subsequently, a suspension of 50.18 g of PPD (diamine) in GBL was added to the reaction mixture over 60 minutes while stirring. After continuing stirring at room temperature for 2 hours, ethyl alcohol was added and stirred for 1 hour, after which GBL was added. The precipitate that formed in the reaction mixture was removed by filtration, thereby obtaining a reaction solution.

[0167] Ethyl alcohol was added to the resulting reaction solution, thereby producing a precipitate consisting of a crude polymer. The produced crude polymer was filtered off and dissolved in tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was added dropwise to water to precipitate the polymer, and the resulting precipitate was filtered off. The resulting solution was then vacuum dried to obtain a powdered polymer {polyimide precursor (polymer A-1)}. The weight-average molecular weight (Mw) was 18,000.

[0168] (Polymer A-2: Synthesis of polyimide precursor) Polymer A-2 was obtained in the same manner as in the example of Polymer A-1, except that 169.8 g of DSDA was used as the tetracarboxylic dianhydride and 98.5 g of m-TB was used as the diamine. The weight average molecular weight (Mw) of the polymer A-2 was 28,000.

[0169] (Polymer A-3: Synthesis of polyimide precursor) Polymer A-3 was obtained in the same manner as in the example of Polymer A-1, except that 169.8 g of DSDA was used as the tetracarboxylic dianhydride, 49.3 g of m-TB was used as the diamine, and 46.5 g of DADPE was used. The weight average molecular weight (Mw) of Polymer A-3 was 26,000.

[0170] (Polymer A-4: Synthesis of polyimide precursor) Polymer A-4 was obtained in the same manner as in the example of Polymer A-1, except that 147.11 g of ODPA was used as the tetracarboxylic dianhydride and 92.9 g of DADPE was used as the diamine. The weight average molecular weight (Mw) of Polymer A-4 was 22,000.

[0171] (Polymer A-5: Synthesis of polyimide precursor) Polymer A-5 was obtained in the same manner as in the example of Polymer A-1, except that 103.4 g of PMDA was used as the tetracarboxylic dianhydride and 98.5 g of m-TB was used as the diamine. The weight average molecular weight (Mw) of the polymer A-5 was 24,000.

[0172] (Polymer A-6: Synthesis of solvent-soluble polyimide precursor) Into a three-neck flask equipped with a Dean-Stark extractor, the atmosphere inside the flask was replaced with nitrogen, and then 100.0 g of NMP and 34.9 g (0.1 mol) of BAFL were added, and further 15.6 g (0.05 mol) of ODPA and 25.0 g of toluene were added thereto, followed by heating at 180°C.

[0173] After confirming that the theoretical amount of water (1.80 g) and the added toluene (25.0 g) were both extracted into the Dean-Stark extractor, the heating was stopped and the mixture was cooled to room temperature, thereby obtaining a reaction liquid.

[0174] The resulting reaction mixture was mixed with 15.5 g (0.1 mol) of Karenz (registered trademark) MOI (trade name; manufactured by Resonac Corporation) and stirred to obtain a polymer solution. The resulting polymer solution was added dropwise to 3 kg of water to precipitate the polymer, which was then filtered. The resulting polymer was then vacuum dried to obtain a powder of terminally modified {polyimide precursor (polymer A-6)}. This polymer A-6 had a weight-average molecular weight (Mw) of 4,400, a number-average molecular weight (Mn) of 3,400, and a polydispersity index (Mw / Mn) of 1.29. Furthermore, based on the integral ratio of proton NMR, it was confirmed that the modification rate of the polyimide main chain terminals was 95%.

[0175] [Combination example] Solutions of photosensitive resin compositions were obtained by blending the components as shown in the table below (Blending Examples 1 to 8). Note that the blending amount of each component in Table 1 is expressed in parts by mass.

[0176] [Table 1]

[0177] The symbols in the table represent the following compounds. (Photopolymerization initiator) D-1: 1,2-Propanedione-3-cyclopentyl-1-[4-(phenylthio)phenyl]-2-(benzoyloxime) (trade name: PBG-305, manufactured by Changzhou Power Electronics Co., Ltd.) D-2: 1-[4-(phenylthio)phenyl]-3-propane-1,2-dione-2-(O-acetyloxime) (trade name: PBG-3057, manufactured by Changzhou Power Electronics Co., Ltd.) (Silane coupling agent) E-1: 3-glycidoxypropyltrimethoxysilane (Shin-Etsu Chemical Co., Ltd.) (Crosslinking agent) F-1: Tetrakis(methoxymethyl)glycoluril (solvent) H-1: γ-butyrolactone (GBL) H-2: Dimethyl sulfoxide (DMSO) (polymerization inhibitor) I-1: p-Methoxyphenol

[0178] [Example 1] <Preparation of insulating layer> (glass transition temperature) A photosensitive resin composition was spin-coated onto a 6-inch silicon wafer substrate with an aluminum vapor deposition layer on its surface so that the film thickness after curing would be 10 μm, and the substrate was pre-baked at 110°C for 4 minutes. The composition was then subjected to a heat curing treatment at 230°C for 2 hours using a vertical curing furnace (Koyo Lindberg, model VF-2000B), thereby producing a wafer on which a resin film (insulating layer) was formed.

[0179] Using a dicing saw (DISCO DAD3350), 3 mm wide cuts were made in the resin film of the prepared wafer. The wafer was then immersed overnight in a dilute hydrochloric acid solution to peel off the resin film pieces, and then dried. The dried wafer was cut into pieces measuring 3 mm x 50 mm and used as samples.

[0180] The samples obtained above were measured using a measuring device TMA-60 (Shimadzu Corporation) at a temperature rise rate of 10°C / min and a nitrogen flow rate of 50 mL / min. In the measurement, the glass transition temperature (°C) was calculated based on the points of 150°C and 1000 μm.

[0181] (Young's modulus) For the samples obtained in the above (glass transition temperature) section, Young's modulus (GPa) was measured using TENSILON (UTM-II-20, manufactured by Orientec Co., Ltd.) at a test speed of 40 mm / min and an initial load of 0.5 fs.

[0182] Table 2 shows the measurement results of the glass transition point and Young's modulus of the insulating layer.

[0183] [Table 2]

[0184] <Fabrication of Rewiring Layer and Semiconductor Device>

[0185] A 6-inch silicon wafer (manufactured by Fujimi Electronics Co., Ltd., thickness 625±25 μm) was prepared as a semiconductor chip, and its top and side surfaces were covered with epoxy resin as a molding resin, thereby forming an epoxy resin sealing material.

[0186] (developability) A metal layer was formed on the underside of the wafer (the side of the wafer not covered with the encapsulant) by sputtering 200 nm of Ti and 400 nm of Cu in that order using a sputtering device (L-440S-FHL, manufactured by Canon Anelva Corporation). The resin composition of Formulation Example 1 was spin-coated onto this metal layer using a coater developer (D-Spin 60A, manufactured by SOKUDO Co., Ltd.), followed by pre-baking on a hot plate at 110°C for 180 seconds, thus forming a coating. The coating was formed so that the final thickness of the cured film would be 5 μm.

[0187] Immediately after the coating film was formed (here, within 5 minutes after the coating film was formed), the coating film was irradiated with 400 mJ / cm 2 using a Prisma GHI (Ultratech) with a test pattern mask. 2 The coating was then spray-developed using a coater developer (D-Spin 60A, manufactured by SOKUDO Co., Ltd.) for a time equal to 1.4 times the time it took for the unexposed areas to completely dissolve and disappear using cyclopentanone as the developer. The coating was then spray-washed with propylene glycol methyl ether acetate for 10 seconds while the wafer was rotating, yielding a relief pattern on Cu (relief pattern formation step). The resulting relief patterns were evaluated according to the following criteria: "Good": A 7 μm via hole was formed using this process. "Acceptable": A 10 μm via hole was formed using this process. "Not acceptable": Via holes of 10 μm or less could not be formed using this process. In the above evaluation, "a via hole was formed" means that when the cross section of the relief pattern was observed with a field emission scanning electron microscope (FE-SEM) S-4800 (manufactured by Hitachi High-Technologies Corporation), the via hole was observed to have no residue, bridging, or footing at the bottom.

[0188] The wafer with the relief pattern formed on Cu was heated in a temperature-programmable curing furnace (VF-2000, manufactured by Koyo Lindberg) at 230°C for 2 hours in a nitrogen atmosphere to obtain a cured relief pattern of resin approximately 5 μm thick on Cu (insulating layer formation step: first insulating layer). 200 nm thick Ti and 400 nm thick Cu were sputtered onto the obtained relief pattern in this order using the sputtering device described above (wiring formation step: wiring).

[0189] The photosensitive resin composition obtained in Formulation Example 1 was spin-coated onto the sputtered relief pattern using a coater developer (D-Spin 60A, manufactured by SOKUDO Co., Ltd.) in the same manner, followed by pre-baking on a hot plate at 110°C for 180 seconds to form a coating film. The resulting coating film was then heat-treated in a temperature-programmable curing oven (VF-2000, manufactured by Koyo Lindberg Co., Ltd.) at 230°C for 2 hours under a nitrogen atmosphere to obtain a cured resin film approximately 5 μm thick (second insulating layer) on the relief pattern of the cured product of Formulation Example 1. This formed a rewiring layer including the first insulating layer, wiring, and second insulating layer.

[0190] Then, a plurality of external connection terminals corresponding to each semiconductor chip were formed (bump formation) on the side of the rewiring layer opposite the sealing material, and the semiconductor chips were diced to produce the semiconductor device of Example 1. This semiconductor device is a fan-out type wafer-level chip size package type semiconductor device.

[0191] (Peeling evaluation: Adhesion) For the semiconductor device of Example 1 fabricated above, a cured film (second insulating layer) approximately 5 μm thick formed on the cured product relief pattern (first insulating layer) in the rewiring layer was reflowed 20 times. The adhesion characteristics between the copper substrate and the insulating layer (cured resin coating) were then evaluated according to the cross-cut method of JIS K 5600-5-6 standard, based on the following criteria. Here, "reflow" was performed under simulated solder reflow conditions using a mesh belt continuous firing furnace (manufactured by Koyo Thermo Systems, model number 6841-20AMC-36) in a nitrogen atmosphere, with heating to a peak temperature of 260°C. The "simulated reflow conditions" were based on the solder reflow conditions described in Section 7.6 of IPC / JEDEC J-STD-020A, a standard established by the US semiconductor industry association for semiconductor device evaluation methods. The solder melting point was assumed to be a high 220°C, and the results were normalized. "Excellent": The insulating layer attached to the substrate has a lattice count of 80 to 100. "Good": The lattice number of the insulating layer adhered to the substrate is 60 or more but less than 80 "Acceptable": The number of lattices in the insulating layer attached to the substrate is 40 or more but less than 60 "Not acceptable": The number of lattices in the insulating layer attached to the substrate is less than 40

[0192] [Examples 2 to 7 and Comparative Examples 1 and 2] Tests were carried out using Blending Examples 2 to 9 in the same manner as in Example 1. The results are shown in Table 1. For each Blending Example, the optimal exposure dose and development time were calculated before production, and then each test was carried out.

[0193] [Table 3]

[0194] As can be seen from Table 3, in the examples, it was possible to form fine via holes, ensure adhesion between the insulating layer and the wiring after the high-temperature reflow process, and suppress poor insulation. [Industrial Applicability]

[0195] The present disclosure is preferably applied to a semiconductor device having a semiconductor chip and a redistribution layer connected to the semiconductor chip, particularly to a fan-out wafer-level chip size package type semiconductor device, and also to the field of semiconductor devices having a multi-chip structure. [Explanation of symbols]

[0196] 1. Semiconductor device 2. Semiconductor chips 2a terminal 3. Encapsulating material 4 Redistribution layer 5. Wiring 5a wiring 6. Insulating layer (interlayer insulating film) 7 External connection terminal 8 Protective layer 8a hole 9 Stacked via structure 10 wafers 11 Support 12 Molding resin 13 Photosensitive resin composition

Claims

1. A semiconductor device comprising: a plurality of semiconductor chips; a sealing material covering a portion of the semiconductor chips; and a redistribution layer disposed on a surface of the semiconductor chips that is not covered by the sealing material and having an area larger than that of the semiconductor chips in a planar view, the redistribution layer including wiring electrically connected to the semiconductor chips; and an insulating layer having a glass transition point of 240 to 320°C.

2. The semiconductor device according to claim 1 , wherein the insulating layer has a layer structure of three or more layers.

3. The semiconductor device according to claim 1 , wherein the redistribution layer has a stacked via structure.

4. The semiconductor device according to claim 1 , wherein the sealing material is in contact with the insulating layer.

5. The semiconductor device according to claim 1 , wherein the sealing material includes an epoxy resin.

6. 2. The semiconductor device according to claim 1, wherein the glass transition point is 245 to 315°C.

7. 2. The semiconductor device according to claim 1, wherein the glass transition point is 260 to 310°C.

8. 2. The semiconductor device according to claim 1, wherein the glass transition point is 265 to 300.degree.

9. 2. The semiconductor device according to claim 1, wherein the insulating layer has a Young's modulus of 3 to 7 GPa.

10. 2. The semiconductor device according to claim 1, wherein said insulating layer contains at least one element selected from the group consisting of carbon (C), hydrogen (H), nitrogen (N), oxygen (O), silicon (Si), and titanium (Ti).

11. The semiconductor device according to claim 1 , wherein said insulating layer is halogen-free.

12. 2. The semiconductor device according to claim 1, wherein said insulating layer contains at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

13. the semiconductor device optionally includes a protective layer that protects the semiconductor chip; 2. The semiconductor device according to claim 1, wherein, when the semiconductor device includes the protective layer, the protective layer is disposed between the semiconductor chip and the insulating layer.

14. The semiconductor device according to claim 13 , wherein the protective layer is in contact with at least one of the semiconductor chip and the insulating layer.

15. 14. The semiconductor device according to claim 13, wherein a hole is formed in the protective layer, and the semiconductor chip and a wiring electrically connected to the semiconductor chip are electrically connected through the hole.

16. 16. The semiconductor device according to claim 15, wherein a proportion of an opening area resulting from the holes in a surface of the protective layer on the semiconductor chip side is less than half.

17. 14. The semiconductor device according to claim 13, wherein the protective layer includes at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

18. At least one of the protective layer and the insulating layer is represented by the following general formula (1): 【Chemistry 1】 (In the formula, X １ is a tetravalent organic group derived from a tetracarboxylic dianhydride, and Y １ is a divalent organic group derived from a diamine, and m is an integer of 1 or greater.

14. The semiconductor device of claim 13, comprising a polyimide comprising the structure:

19. X in the general formula (1) １ is a tetravalent organic group containing an aromatic ring, and Y in the general formula (1) １ The semiconductor device according to claim 18 , wherein is a divalent organic group containing an aromatic ring.

20. X in the general formula (1) １ are represented by the following general formulas (2) to (6): 【Chemistry 2】 【Transformation 3】 【Chemistry 4】 (In the formula, R ９ teeth 、 is an oxygen atom, a sulfur atom, a sulfonyl group, or a divalent organic group. 【Transformation 5】 【Transformation 6】 20. The semiconductor device of claim 18, comprising at least one structure represented by:

21. Y in the general formula (1) １ are represented by the following general formulas (7) to (10): 【Transformation 7】 (In the formula, R １０ , R １１ , R １２ , and R １３ are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. 【Transformation 8】 (In the formula, R １４ ~R ２１ are each independently a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. 【Chemistry 9】 (In the formula, R ２２ is a divalent group or an oxygen atom, and R ２３ ~R ３０ are each independently a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different from each other; k is an integer of 1 to 3; when k is 2 or 3, R ２２ , R ２３ , R ２４ , R ２７ , R ２８ may be the same or different.) 【Chemistry 10】 20. The semiconductor device of claim 18, comprising at least one structure represented by:

22. The insulating layer is formed of the following general formula (11): 【Chemistry 11】 (In the formula, U and V each independently represent a divalent organic group.) The semiconductor device according to claim 12 , comprising the polybenzoxazole having the structure:

23. 23. The semiconductor device according to claim 22, wherein U in the general formula (11) is a divalent organic group having 1 to 30 carbon atoms.

24. 23. The semiconductor device according to claim 22, wherein U in said general formula (11) is a chain alkylene group having 1 to 8 carbon atoms and in which some or all of the hydrogen atoms are substituted with fluorine atoms.

25. 23. The semiconductor device according to claim 22, wherein V in the general formula (11) is a divalent organic group having 1 to 40 carbon atoms.

26. 23. The semiconductor device according to claim 22, wherein V in said general formula (11) is a divalent chain aliphatic group having 1 to 20 carbon atoms.

27. 23. The semiconductor device according to claim 22, wherein V in said general formula (11) is a divalent organic group containing an aromatic group.

28. V in the general formula (11) is represented by the following general formulas (7) to (10): 【Chemistry 12】 (In the formula, R １０ , R １１ , R １２ , and R １３ are each independently a hydrogen atom or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different. 【Chemistry 13】 (In the formula, R １４ ~R ２１ are each independently a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be the same or different. 【Chemistry 14】 (In the formula, R ２２ is a divalent group or an oxygen atom, and R ２３ ~R ３０ are each independently a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different from each other; k is an integer of 1 to 3; when k is 2 or 3, R ２２ , R ２３ , R ２４ , R ２７ , R ２８ may be the same or different.) 【Chemistry 15】 23. The semiconductor device of claim 22, comprising at least one structure represented by:

29. The semiconductor device according to claim 12 , wherein the polymer having a phenolic hydroxyl group includes a novolac phenolic resin.

30. 13. The semiconductor device according to claim 12, wherein the polymer having a phenolic hydroxyl group includes a phenolic resin having no unsaturated hydrocarbon group and a modified phenolic resin having an unsaturated hydrocarbon group.

31. 2. The semiconductor device according to claim 1, wherein said insulating layer includes a first insulating layer and a second insulating layer having a different composition from said first insulating layer.

32. 32. The semiconductor device according to claim 1, wherein the semiconductor device is a fan-out type, wafer level chip size package type semiconductor device.

33. A method for manufacturing a semiconductor device, comprising: a first step of preparing a plurality of semiconductor chips; a second step of covering the prepared semiconductor chips with a sealing material so that at least a portion of the semiconductor chips is exposed; and a third step of forming a redistribution layer, which has an area larger than that of the semiconductor chips in a planar view, on the exposed surface side of the semiconductor chips, wherein the redistribution layer comprises an insulating layer having a glass transition point of 240 to 320°C.

34. 34. The method for manufacturing a semiconductor device according to claim 33, wherein the insulating layer is formed from a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

35. 35. The method for manufacturing a semiconductor device according to claim 33 or 34, wherein the second step includes a step of forming a protective layer on the semiconductor chip, and a step of covering the semiconductor chip on which the protective layer has been formed with a sealing material so that at least a portion of the protective layer is exposed, and the third step includes a step of forming the redistribution layer on the protective layer side.

36. 36. The method for manufacturing a semiconductor device according to claim 35, wherein the protective layer is formed from a photosensitive resin composition capable of forming at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

37. In a semiconductor device comprising: a plurality of semiconductor chips; a sealing material covering a portion of the semiconductor chips; and a redistribution layer disposed on a surface of the semiconductor chip that is not covered by the sealing material and that has an area larger than that of the semiconductor chips in a planar view, the insulating layer is used to form the redistribution layer, the insulating layer having a glass transition point of 240 to 320°C.

38. A rewiring layer is provided in a semiconductor chip including a plurality of semiconductor chips and a sealing material covering a portion of the semiconductor chips, the rewiring layer being arranged on a surface side not covered by the sealing material and having an area larger than that of the semiconductor chips in a planar view, the rewiring layer including wiring electrically connected to the semiconductor chips, and an insulating layer in contact with the wiring and having a glass transition point of 240 to 320°C.

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