Substrate processing system, substrate processing method, program, and storage medium

Abstract

To provide a technique for estimating the period of substrate misalignment in a substrate processing system.SOLUTION: In one exemplary embodiment, a substrate processing system is provided. The substrate processing system includes a process module, a transfer module, a first measuring device, a second measuring device, a memory unit, and a control unit. The first measuring device is configured to acquire a first position of the substrate during a first period and / or a second position of the substrate during a second period. The second measuring device is configured to acquire a third position of the substrate during an intermediate period. The control unit is configured to estimate whether the substrate misalignment has occurred during the first period and / or the second period, or the intermediate period, using a first misalignment amount at the first position and / or a second misalignment amount at the second position, and a third misalignment amount at the third position.SELECTED DRAWING: Figure 20

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing system, a substrate processing method, a program, and a storage medium. [Background technology]

[0002] A substrate processing system is used to process a substrate. The substrate processing system disclosed in Patent Document 1 includes a transfer module, a position detection sensor, and a control unit. The process module includes a chamber and a substrate support disposed within the chamber. The transfer module transfers the substrate onto the substrate support. The position detection sensor detects misalignment of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-093169 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for estimating the duration of substrate misalignment in a substrate processing system. [Means for solving the problem]

[0005] In one exemplary embodiment, a substrate processing system is provided. The substrate processing system includes a process module, a transfer module, a first measurement device, a second measurement device, a memory unit, and a controller. The process module includes a process chamber and a substrate support. The substrate support is disposed in the process chamber. The process module is configured to perform processing on a substrate on the substrate support. The transfer module includes a vacuum chamber. The vacuum chamber is connected to the process chamber. The transfer module is configured to transfer the substrate. The first measurement device is configured to acquire a first position of the substrate and / or a second position of the substrate. The first position of the substrate is a position of the substrate during a first period. The first period is a period during which the substrate is transferred from outside the process chamber to a region above the substrate support by the transfer module. The second position of the substrate is a position of the substrate during a second period. The second period is a period during which the substrate is transferred from the region above the substrate support to outside the process chamber by the transfer module. The second measurement device is configured to acquire a third position of the substrate. The third position of the substrate is a position of the substrate on the substrate support during an intermediate period. The intermediate period is a period between the first period and the second period. The memory unit is configured to store the first reference position and / or the second reference position, and the third reference position. The first reference position is a predetermined position of the substrate to be compared with the first position. The second reference position is a predetermined position of the substrate to be compared with the second position. The third reference position is a predetermined position of the substrate to be compared with the third position. The control unit is configured to estimate, using the first displacement amount and / or the second displacement amount and the third displacement amount, during which period of the first period and / or the second period, or the intermediate period, a displacement of the substrate occurred. The first displacement amount is a displacement amount of the first position relative to the first reference position. The second displacement amount is a displacement amount of the second position relative to the second reference position. The third displacement amount is a displacement amount of the third position relative to the third reference position. [Effects of the Invention]

[0006] According to one exemplary embodiment, the duration of a substrate's displacement in a substrate processing system is estimated. [Brief explanation of the drawings]

[0007] [Figure 1] 1 illustrates a substrate processing system according to an exemplary embodiment. [Figure 2] FIG. 1 is a diagram for explaining an example of the configuration of a plasma substrate processing system. [Figure 3] FIG. 1 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. [Figure 4] FIG. 1 is a top view of an electrostatic chuck according to an exemplary embodiment. [Figure 5] FIG. 5 is a partial enlarged view of one exemplary embodiment of the electrostatic chuck shown in FIG. 4. [Figure 6] Each of (A) to (E) of FIG. 6 is a diagram illustrating an example of a process for measuring a first position by a first measuring device. [Figure 7] FIG. 2 is a diagram for explaining an example of the positional relationship between a measurement region of a first measuring instrument and a substrate. [Figure 8] Figure 8(A) is a diagram for explaining an example of movement of a substrate in the coordinate system of the transport robot, and Figure 8(B) is a diagram for explaining an example of movement of a substrate in the coordinate system of the substrate. [Figure 9] 10A to 10C are diagrams illustrating an example of a process for calculating the center position of a substrate. [Figure 10] FIG. 2 is an enlarged partial cross-sectional view of a substrate and an electrostatic chuck according to an exemplary embodiment. [Figure 11] FIG. 10 is a cross-sectional view of a second meter according to one exemplary embodiment. [Figure 12] 1A and 1B are schematic illustrations of images of a substrate after processing has been performed on the substrate according to one exemplary embodiment; [Figure 13] 10A and 10B are schematic illustrations of images of a substrate after processing has been performed on the substrate according to another exemplary embodiment; [Figure 14] 10A and 10B are schematic illustrations of images of a substrate according to yet another exemplary embodiment after processing on the substrate; [Figure 15] 1A and 1B are diagrams illustrating an exemplary embodiment illustrating the positional relationship between the center position of a substrate and the center position of a substrate support when a process is performed on the substrate. [Figure 16] FIG. 10 is a diagram illustrating a configuration of an imaging unit according to another exemplary embodiment. [Figure 17] 10A and 10B are schematic illustrations of images of a substrate according to yet another exemplary embodiment after processing on the substrate; [Figure 18] 10A to 10C are diagrams illustrating an example of a process for calculating the positional relationship between the position of the substrate and the position of the pattern. [Figure 19] 10A and 10B are diagrams illustrating another example of a process for calculating the positional relationship between the position of the substrate and the position of the pattern. [Figure 20] 1 is a flow chart illustrating a substrate processing method according to an exemplary embodiment. [Figure 21] FIG. 1 illustrates a substrate processing system according to another exemplary embodiment. [Figure 22] FIG. 1 illustrates a first meter according to another exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] 1 is a diagram showing a substrate processing system according to an example embodiment. As shown in FIG. 1, the substrate processing system PS includes at least one process module, a transfer module TM, a first measuring device CM1, a second measuring device CM2, a memory unit 2a2, and a controller 2. The substrate processing system PS may include multiple process modules PM1 to PM6 as the at least one process module, or may include multiple first measuring devices CM1. The substrate processing system PS may further include load ports LP1 to LP4, an aligner AN, load lock modules LL1 and LL2, and a storage SR.

[0010] The substrate processing system PS may further include a loader module LM. The loader module LM is an example of an atmospheric transfer module. The loader module LM includes an atmospheric chamber ACH. The pressure inside the atmospheric chamber ACH of the loader module LM is set to atmospheric pressure. The loader module LM may include a fan filter unit (FFU). The loader module LM is, for example, an equipment front end module (EFEM). The loader module LM is disposed between each of the load ports LP1 to LP4 and each of the load lock modules LL1 and LL2. The load ports LP1 to LP4 are arranged along one of a pair of longitudinal edges of the loader module LM. The load lock modules LL1 and LL2 are arranged along the other of a pair of longitudinal edges of the loader module LM. Each of the load ports LP1 to LP4 is configured to support a cassette CST placed thereon. The cassette CST is a container that accommodates a plurality of substrates W therein. The cassette CST is, for example, a front-opening unified pod (FOUP).

[0011] The loader module LM includes a transfer robot TR3. The transfer robot TR3 is disposed in an atmospheric chamber ACH of the loader module LM. The transfer robot TR3 may include an articulated arm AR31 and an end effector FK31. The end effector FK31 is attached to the tip of the articulated arm AR31 and is configured to support a substrate W placed thereon. The transfer robot TR3 transfers the substrate W based on operation instructions output by a controller 2, which will be described later. The transfer robot TR3 transfers the substrate W between any two of a cassette CST placed on at least one of the load ports LP1 to LP4, load lock modules LL1 and LL2, an aligner AN, a storage SR, and a second measuring device CM2, which will be described later.

[0012] The aligner AN is disposed along one of a pair of edges along the shorter direction of the loader module LM. The aligner AN may be disposed along an edge along the longer direction of the loader module LM. Alternatively, the aligner AN may be disposed inside the atmospheric chamber ACH of the loader module LM. The aligner AN includes a support base, an optical sensor, and the like. The support base of the aligner AN is rotatable and supports the substrate W placed thereon. The aligner AN detects the angular position of a marker (e.g., a notch) of the substrate W on the support base and the center position of the substrate W on the support base using the optical sensor. The controller 2 controls the rotation of the support base of the aligner AN to correct the angular position of the marker (e.g., a notch) of the substrate W on the support base to a reference angular position so as to correct the amount of deviation in the angular position of the substrate W. The controller 2 also controls the position of the end effector FK31 when receiving the substrate W from the aligner AN onto the end effector FK31, so as to position the center of the substrate W at a predetermined position of the end effector FK31.

[0013] The storage SR is arranged along an edge along the longitudinal direction of the loader module LM. The storage SR may be arranged along an edge along the lateral direction of the loader module LM. Alternatively, the storage SR may be arranged inside the loader module LM. The storage SR is configured to accommodate the substrate W therein.

[0014] In one embodiment, the second measuring instrument CM2 is connected to the atmospheric chamber ACH. In the example shown in FIG. 1, the second measuring instrument CM2 is arranged along an edge along the longitudinal direction of the loader module LM. The second measuring instrument CM2 may be arranged along an edge along the lateral direction of the loader module LM. Alternatively, the second measuring instrument CM2 may be arranged inside the loader module LM. The second measuring instrument CM2 may be connected to a decompression chamber. The second measuring instrument CM2 is configured to perform image inspection on the substrate W. Details of the second measuring instrument CM2 will be described later.

[0015] Each of the load lock modules LL1 and LL2 is disposed between the transfer module TM and the loader module LM. Each of the load lock modules LL1 and LL2 provides a decompression chamber DCH1 or DCH2. Each of the load lock modules LL1 and LL2 and the loader module LM are connected via a gate valve G3. Each of the load lock modules LL1 and LL2 and the transfer module TM are connected via a gate valve G2.

[0016] In one embodiment, the transfer module TM may include a vacuum chamber VCH. In the example shown in Fig. 1, the transfer module TM is configured to transfer the substrate W through a reduced pressure space in the vacuum chamber VCH. The vacuum chamber VCH is connected to each of the load lock modules LL1 and LL2 via a gate valve G2. The vacuum chamber VCH is connected to the process modules PM1 to PM6 via a gate valve G1.

[0017] In one embodiment, the transfer module TM may include a transfer robot TR disposed in the vacuum chamber VCH. The transfer robot TR may include articulated arms AR11, AR12 and end effectors FK11, FK12. The end effector FK11 is attached to the tip of the articulated arm AR11 and configured to support a substrate W placed thereon. The end effector FK12 is attached to the tip of the articulated arm AR12 and configured to support a substrate W placed thereon. The transfer robot TR transfers the substrate W based on operation instructions output by a control unit 2, which will be described later.

[0018] The transfer robot TR holds the substrate W by means of end effectors FK11 and FK12. The transfer robot TR transfers the substrate W between any two of the paths between the load lock modules LL1 and LL2, the process modules PM1 to PM6, and the vacuum chamber VCH of the transfer module TM. In one embodiment, the transfer module TM may have a vacuum pad. The vacuum pad may be included in the end effector. The vacuum pad is configured to vacuum-suck the substrate W on the end effector FK11 and FK12.

[0019] In one embodiment, each of the process modules PM1 to PM6 is configured to perform a dedicated process on the substrate W. At least one of the process modules PM1 to PM6 is a substrate processing system such as a plasma processing apparatus 1 described below.

[0020] The control unit 2 is, for example, a computer. The control unit 2 may be composed of a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls each part of the substrate processing system PS.

[0021] The substrate processing system PS is not necessarily limited to that shown in FIG. 1. For example, the number of process modules and / or the number of transfer modules in the substrate processing system may be different from that shown in FIG. 1. For example, the number of load ports may be five or more, or any number of load ports may be used. The substrate processing system may also be a system in which a plurality of module groups, each including a process module and a load lock module, are connected to a loader module (a so-called loader-type system). The substrate processing system may also be a system in which two or more process modules are connected in a row around a transfer module so as to surround the transfer module (a so-called cluster-type system).

[0022] 2 and 3 will be referred to below. The plasma processing system shown in Fig. 2 is an example of a substrate processing system PS. The example of the plasma processing apparatus shown in Fig. 3 is employed as at least one of the process modules PM1 to PM12.

[0023] FIG. 2 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing system. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface 11a for supporting a substrate.

[0024] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0025] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and an interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0026] In one embodiment, interface 2a3 may provide a user interface that provides a connection to an external device CU, which may include a display, speakers, a touchscreen, a keyboard, a mouse, and / or other suitable devices.

[0027] In one embodiment, the second measuring device CM2 includes an extracting unit 2b1 and a calculating unit 2b2. In the example shown in Fig. 2, the extracting unit 2b1 and the calculating unit 2b2 are included in the processing unit 2a1. Details of the extracting unit 2b1 and the calculating unit 2b2 will be described later.

[0028] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 3 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0029] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0030] The substrate support 11 includes a main body 5 and a ring assembly 112. The main body 5 has a central region 5a for supporting a substrate W and an annular region 5b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 5b of the main body 5 surrounds the central region 5a of the main body 5 in a plan view. The substrate W is disposed on the central region 5a of the main body 5, and the ring assembly 112 is disposed on the annular region 5b of the main body 5 so as to surround the substrate W on the central region 5a of the main body 5. Thus, the central region 5a includes a substrate support surface 11a that supports the substrate W placed thereon, and the annular region 5b includes a ring support surface that supports the ring assembly 112 placed thereon.

[0031] In one embodiment, the main body 5 includes a base 50 and an electrostatic chuck 51. The base 50 includes a conductive member. The conductive member of the base 50 can function as a lower electrode. The electrostatic chuck 51 is disposed on the base 50. The electrostatic chuck 51 includes a ceramic member 51a and an electrostatic electrode 51b disposed within the ceramic member 51a. A voltage is applied to the electrostatic electrode 51b to hold the substrate W supported on the substrate support 11. The ceramic member 51a has a central region 5a. In one embodiment, the ceramic member 51a also has an annular region 5b. Note that another member surrounding the electrostatic chuck 51, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 5b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 51 and the annular insulating member. At least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 51a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 50 and at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 51b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0032] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0033] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 51, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 50a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 50a. In one embodiment, the flow passage 50a is formed in the base 50, and one or more heaters are disposed in the ceramic member 51a of the electrostatic chuck 51. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 5a.

[0034] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0035] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0036] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0037] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0038] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0039] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0040] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0041] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0042] Reference is now made to Figures 4 and 5. Figure 4 is a top view of an electrostatic chuck according to an example embodiment. Figure 5 is an enlarged partial view of the example embodiment of the electrostatic chuck shown in Figure 4.

[0043] In one embodiment, the electrostatic chuck 51 may include a first protrusion 51c (or a seal ring) and a plurality of second protrusions 51d (or dot portions). The first protrusion 51c and the plurality of second protrusions 51d are included in the surface structure of the electrostatic chuck 51. The first protrusion 51c has a ring shape. The first protrusion 51c has an upper surface that forms a part of the substrate support surface 11a. As shown in FIG. 4, the first protrusion 51c may have a ring shape that follows the outer edge of the substrate support surface 11a. In this case, the pattern of the first protrusion 51c is a ring shape that follows the outer edge of the substrate support surface 11a.

[0044] Each of the multiple second protrusions 51d has an upper surface that constitutes a part of the substrate support surface 11a. The multiple second protrusions 51d are arranged inside the first protrusions 51c. In the example shown in FIG. 4, the multiple second protrusions 51d are arranged inside the outer edge of the substrate support surface 11a. Note that the multiple second protrusions 51d are not shown in FIG. 4. As shown in FIG. 5, the multiple second protrusions 51d may form a pattern whose center is the center position 11c of the substrate support 11. In the example shown in FIG. 5, the multiple second protrusions 51d are arranged at approximately equal intervals along a circumference whose center is the center position 11c of the substrate support 11. The multiple second protrusions 51d may be arranged along multiple concentric circles whose center is the center position 11c of the substrate support 11, or along multiple concentric polygons whose center is the center position 11c of the substrate support 11.

[0045] In one embodiment, the substrate support 11 may include a plurality of gas holes 5c. The plurality of gas holes 5c are included in the surface structure of the electrostatic chuck 51. In the example shown in FIG. 4, the plurality of gas holes 5c includes 12 gas holes 5c. The plurality of gas holes 5c communicate with the gap between the substrate W and the electrostatic chuck 51. The gap between the substrate W and the electrostatic chuck 51 corresponds to the gap between the back surface of the substrate W and the central region 5a described above. In one example, each of the plurality of gas holes 5c is formed by a through-hole in the electrostatic chuck 51 and a through-hole in the base 50 that communicate with each other. The heat transfer gas supply unit may be configured to supply a heat transfer gas to the gap between the substrate W and the electrostatic chuck 51 via the plurality of gas holes 5c.

[0046] As shown in Fig. 4, the gas holes 5c may form a pattern whose center is the central position 11c of the substrate support 11. In the example shown in Fig. 4, the gas holes 5c are arranged at the vertices of a hexagon whose center is the central position 11c of the substrate support 11. In this case, the pattern of the gas holes 5c includes a hexagon. More specifically, six of the twelve gas holes 5c are arranged at the vertices of a first regular hexagon, and another six of the twelve gas holes 5c are arranged at the vertices of a second regular hexagon located inside the first regular hexagon.

[0047] In one embodiment, the substrate support portion 11 may include a plurality of lifter pins 5e for the substrate W and a plurality of pin holes 5d into which the plurality of lifter pins 5e are inserted. The plurality of pin holes 5d are included in the surface structure of the electrostatic chuck 51. In the example shown in FIG. 4, the plurality of pin holes 5d are composed of three pin holes 5d. In one example, each of the plurality of pin holes 5d is composed of a through-hole in the electrostatic chuck 51 and a through-hole in the base 50 that are connected to each other. A plurality of lifter pins 5e configured to be able to lift and lower the substrate W are inserted into the plurality of pin holes 5d.

[0048] As shown in Fig. 4, the multiple pin holes 5d may form a regular pattern centered at the central position 11c of the substrate support part 11. In the example shown in Fig. 4, the multiple pin holes 5d are arranged at the vertices of an equilateral triangle centered at the central position 11c of the substrate support part 11. In this case, the pattern of the multiple pin holes 5d includes a triangle.

[0049] The transfer module TM is configured to transfer the substrate W to an area above the substrate support 11. In one embodiment, the plurality of lifter pins 5e are configured to raise and lower the substrate W between an area above the substrate support 11 and an area above the substrate support 11. The area above the substrate support 11 may include an area above the plurality of elevated lifter pins 5e. The transfer module TM may place the substrate W to be transferred from outside the processing chamber 10 onto the plurality of elevated lifter pins 5e.

[0050] A period during which the substrate W is transferred by the transfer module TM from outside the processing chamber 10 to the region above the substrate support 11 is defined as a first period, and a position of the substrate W during the first period is defined as a first position. A period during which the substrate W is transferred by the transfer module TM from the region above the substrate support 11 to outside the processing chamber 10 is defined as a second period, and a position of the substrate W during the second period is defined as a second position. The first measuring instrument CM1 is configured to acquire the first position of the substrate W and / or the second position of the substrate W.

[0051] In one embodiment, the first measurement device CM1 provides a measurement area within the vacuum chamber VCH and is configured to measure the position of the substrate W passing through the measurement area. As shown in FIG. 1 , the first measurement device CM1 may include two optical sensors (optical sensors 81a and 81b) disposed within the vacuum chamber VCH. The optical sensors 81a and 81b provide measurement areas above them. The optical sensors 81a and 81b may be disposed in front of the gate valve G1 in the vacuum chamber VCH. The optical sensors 81a and 81b face each other such that, when looking at the gate valve G1 from the vacuum chamber VCH, the optical sensor 81a is located on the right side and the optical sensor 81b is located on the left side. The optical sensors 81a and 81b are spaced apart by a distance smaller than the diameter of the substrate W.

[0052] Each of the optical sensors 81a and 81b may include a light-emitting unit and a light-receiving unit. The light-emitting unit and the light-receiving unit are arranged to face each other in the vertical direction. The light-emitting unit emits light toward the light-receiving unit. The light emitted by the light-emitting unit may include laser light or diffused light. The light-emitting unit may include an LED or a light-emitting element other than an LED. The optical sensors 81a and 81b may be arranged between the processing chamber 10 of each of the process modules PM1 to PM6 and the vacuum chamber VCH. In one example, when the processing chamber 10 is connected to the vacuum chamber VCH via a connection unit, the optical sensors 81a and 81b may be arranged in the connection unit located behind the gate valve G1. The optical sensors 81a and 81b may be arranged adjacent to the gate valve G1.

[0053] In one embodiment, the transfer module TM is configured to pass the substrate W through a measurement region of the first measuring device CM1 during a period in which the substrate W is transferred from the vacuum chamber VCH to the processing chamber 10 during the first period and / or during a period in which the substrate W is transferred from the processing chamber 10 to the vacuum chamber VCH during the second period. In one example, the transfer module TM passes the substrate W through a measurement region provided above the optical sensors 81 a, 81 b.

[0054] 6A to 6E are diagrams illustrating an example of a process for measuring a first position by a first measuring device. FIGS. 6A to 6E show changes in the relative positional relationship between the optical sensors 81a and 81b, the substrate W, and the end effector FK11 during the first period when the substrate W is transported from the vacuum chamber VCH to the processing chamber 10. Although the end effector FK11 is shown in each of FIGS. 6A to 6E, the end effector FK12 may also be used. Each of the optical sensors 81a and 81b detects the edge of the substrate W passing through the measurement area. The control unit 2 can obtain the position of the transport robot TR when the edge of the substrate W passes through the measurement area. In one example, the control unit 2 obtains the coordinates of the center of gravity of the end effector FK11 as the position of the transport robot TR. The first measuring device CM1 may include a control unit separate from the control unit 2.

[0055] In each of FIGS. 6A to 6E, the substrate W is located closer to the optical sensor 81b than to the optical sensor 81a. First, as shown in FIG. 6B, the optical sensor 81b detects the substrate W. The control unit 2 acquires the position 82a of the center of gravity of the end effector FK11 when the optical sensor 81b detects the substrate W. Next, as shown in FIG. 6C, the optical sensor 81a detects the substrate W. The control unit 2 acquires the position 82b of the center of gravity of the end effector FK11 when the optical sensor 81a detects the substrate W. Next, as shown in FIG. 6D, the optical sensor 81a detects the substrate W. The control unit 2 acquires the position 82c of the center of gravity of the end effector FK11 when the optical sensor 81a detects the substrate W. Finally, as shown in FIG. 6E, the optical sensor 81b detects the substrate W. The control unit 2 acquires the center of gravity position 82d of the end effector FK11 when the optical sensor 81b detects the substrate W.

[0056] 6(E) to 6(A) in reverse order shows changes in the relative positional relationship between the optical sensors 81a, 81b, the substrate W, and the end effector FK11 during the second period when the substrate is transported from the processing chamber 10 to the vacuum chamber VCH. An example of a process for measuring a second position by the first measuring instrument will be described in reverse order to the example of a process for measuring a first position by the first measuring instrument described above.

[0057] 7 is a diagram illustrating an example of the positional relationship between the measurement region of the first measuring instrument and the substrate. Each of the center-of-gravity positions 82a, 82b, 82c, and 82d indicates the movement of the center-of-gravity position in the coordinate system of the transport robot TR. The control unit 2 acquires, as the position 84b of the substrate W in the coordinate system of the transport robot TR, the intersection of a circle 83a centered at the center-of-gravity position 82a and having a radius equal to the radius r of the substrate W with a circle 83d centered at the center-of-gravity position 82d and having a radius equal to the radius r of the substrate W. The control unit 2 acquires, as the position 84a of the substrate W in the coordinate system of the transport robot TR, the intersection of a circle 83b centered at the center-of-gravity position 82b and having a radius equal to the radius r of the substrate W with a circle 83c centered at the center-of-gravity position 82c and having a radius equal to the radius r of the substrate W. The first position of the substrate W during the first period may include the positions 84a and 84b. The second position of the substrate W during the second period may include positions 84a and 84b.

[0058] The memory unit 2a2 is configured to store a predetermined first reference position of the substrate W to be compared with the first position and / or a predetermined second reference position of the substrate W to be compared with the second position. The first reference position and the second reference position may be the same. The control unit 2 acquires a first amount of deviation of the first position relative to the first reference position. In one example, the control unit 2 determines that a positional deviation of the substrate W has occurred if the first amount of deviation is greater than a threshold value. The control unit 2 acquires a second amount of deviation of the second position relative to the second reference position. In one example, the control unit 2 determines that a positional deviation of the substrate W has occurred if the second amount of deviation is greater than a threshold value. The control unit 2 may acquire the first amount of deviation and / or the second amount of deviation of the positions 84a, 84b relative to the first reference position and / or the second reference position.

[0059] In one embodiment, the first measuring device CM1 may be configured to acquire the center position of the substrate W. The first reference position may be defined by the center position of the substrate W. Fig. 8A is a diagram for explaining an example of movement of a substrate in the coordinate system of the transport robot, and Fig. 8B is a diagram for explaining an example of movement of a substrate in the coordinate system of the substrate. An origin 85c, a coordinate 85a, and a coordinate 85b in the coordinate system of the transport robot TR shown in Fig. 8A correspond to an origin 86c, a coordinate 86a, and a coordinate 86b in the coordinate system of the substrate W shown in Fig. 8B, respectively.

[0060] In one example, the transport robot TR may be taught the position of the center of gravity of the end effector FK11 as the coordinate position of the transport robot TR. The coordinate 85a is the position of the center of gravity of the end effector FK11 when the optical sensor 81a first detects the substrate W. The coordinate 85b is the position of the center of gravity of the end effector FK11 when the optical sensor 81a next detects the substrate W. The movement vector from the origin 86c to the coordinate 86a in the coordinate system of the substrate W is calculated as the inverse vector of the movement vector from the origin 85c to the coordinate 85a in the coordinate system of the transport robot TR. The movement vector from the coordinate 86a to the coordinate 86b in the coordinate system of the substrate W is calculated as the inverse vector of the movement vector from the coordinate 85a to the coordinate 85b in the coordinate system of the transport robot TR.

[0061] Fig. 9 is a diagram showing an example of a process for calculating the center position of a substrate. An example of acquiring the center position of the substrate W will be described below with reference to Fig. 9. First, a coordinate 86g of the midpoint between the coordinates 86a and 86b is calculated. Since the coordinates 86a and 86b correspond to the edges of the substrate W, the center position 86h of the substrate W, the coordinate 86g of the midpoint, and the coordinate 86a of the edge form a right triangle whose hypotenuse has a length equal to the radius r of the substrate W.

[0062] The vector from the edge coordinate 86a to the midpoint coordinate 86g is defined as vector 87a, and the vector from the midpoint coordinate 86g to the center position 86h is defined as vector 87b. The scalar quantity of vector 87a is calculated from the edge coordinate 86a and the midpoint coordinate 86g. Therefore, vector 87b can be calculated from the scalar quantity of vector 87a and the radius r of the substrate W. The control unit 2 can acquire the position moved by vector 87b from the midpoint coordinate 86g as the center position 86h of the substrate W. The first position of the substrate W in the first period may include the center position 86h. The second position of the substrate W in the second period may include the center position 86h.

[0063] The period between the first period and the second period is defined as an intermediate period, and the position of the substrate W on the substrate support 11 during the intermediate period is defined as a third position. In one example, the substrate W transported to the region above the substrate support 11 is placed on a plurality of lifter pins 5e, and is placed at the third position on the substrate support 11 by the plurality of lifter pins 5e being lowered. The plasma processing apparatus 1 is configured to perform a process on the substrate W placed at the third position on the substrate support 11. The process on the substrate includes an etching process or a process (e.g., a plasma CVD method) for forming a deposit on the surface of the substrate W.

[0064] 10 is a partially enlarged cross-sectional view of a substrate and an electrostatic chuck according to one example embodiment. The example shown in FIG. 10 illustrates a pattern of deposits Wa formed on the upper surface of the substrate W by processing the substrate, and a pattern of deposits Wb formed on the lower surface of the substrate W by processing the substrate. The pattern of deposits Wb has an inner edge on the lower surface of the substrate W that is inwardly aligned with the edge of the substrate W.

[0065] In one example, the third position is a position on the electrostatic chuck 51. In the plasma processing apparatus 1, processing is performed on the substrate W on the electrostatic chuck 51. In one embodiment, the processed substrate W is transferred to a second measuring device CM2. The second measuring device CM2 is configured to acquire the third position.

[0066] Reference will now be made to FIG. 11. FIG. 11 is a cross-sectional view of a second measuring device according to one exemplary embodiment. In the example shown in FIG. 11, the second measuring device CM2 includes a housing 6. As shown in FIG. 11, the second measuring device CM2 may further include an imaging unit 60, a substrate chuck 61, a guide rail 62, a light source 63, and a half mirror 64. Each of the imaging unit 60, the substrate chuck 61, the guide rail 62, the light source 63, and the half mirror 64 is disposed within the housing 6.

[0067] The substrate chuck 61 is configured to support a substrate W placed thereon. The substrate chuck 61 is disposed on a guide rail 62. The guide rail 62 is configured to move the substrate chuck 61, which supports the substrate W, within the housing 6. In the example shown in FIG. 11 , the guide rail 62 is configured to move the substrate W supported by the substrate chuck 61 along a transport path P from position 6a to position 6b. Position 6a is adjacent to one end of the guide rail 62. Position 6b is adjacent to the other end of the guide rail 62. In one example, the distance between positions 6a and 6b is at least equal to or greater than the diameter of the substrate W. The transport path P for the substrate W may be along a straight line connecting one end of the guide rail 62 and the other end of the guide rail 62.

[0068] The imaging unit 60 has a field of view that includes the transport path P of the substrate W. The imaging unit 60 is configured to acquire an image of the substrate W. In one embodiment, the imaging unit 60 may be a line scan camera. The direction of the transport path P in the field of view of the imaging unit 60 and the longitudinal direction of the line scan camera are perpendicular to each other. In the example shown in FIG. 11 , the imaging unit 60 acquires an image of the substrate W by acquiring light L emitted from a light source 63 and reflected by the upper surface of the substrate W via a half mirror 64. The light source 63 and the half mirror 64 may be disposed above the transport path P. The imaging unit 60 may be disposed to horizontally face the half mirror 64. In one example, the light source 63 irradiates light L onto the substrate W moving along the transport path P from position 6a to position 6b. The light L reflected by the upper surface of the substrate W is reflected horizontally by the half mirror 64. The light L reflected horizontally by the half mirror 64 is received by the imaging unit 60.

[0069] Reference will now be made to Figures 12 to 14. Figure 12 is a diagram schematically showing an image of a substrate after processing has been performed according to one exemplary embodiment. Figure 13 is a diagram schematically showing an image of a substrate after processing has been performed according to another exemplary embodiment. Figure 14 is a diagram schematically showing an image of a substrate after processing has been performed according to yet another exemplary embodiment.

[0070] In one embodiment, extraction unit 2b1 is configured to extract a first feature pattern and a second feature pattern from an image of substrate W after processing has been performed on the substrate. In the example shown in Fig. 12, extraction unit 2b1 is configured to extract first feature pattern 71 and a second feature pattern 72 from image 7 of substrate W after processing has been performed on the substrate. Hereinafter, with reference to Fig. 12, an exemplary embodiment for extracting first feature pattern 71 and second feature pattern 72 from image 7 will be described.

[0071] The first feature pattern 71 has its center reflecting the central position of the substrate W. In one embodiment, the first feature pattern 71 may reflect the edge 70 of the substrate W. In one example, the extraction unit 2b1 extracts the first feature pattern 71 from the difference in brightness between the background BK of the substrate W and the edge 70 in the image 7. In one embodiment, the extraction unit 2b1 may extract the first feature pattern 71 by binarizing the image 7. By binarizing, the pixel values ​​of the background BK region of the substrate W in the image 7 are converted to values ​​different from the pixel values ​​of the region of the substrate W in the image 7, and therefore the edge 70 of the substrate W can be extracted as the first feature pattern 71 from the binarized image.

[0072] The second feature pattern 72 has a center that reflects the central position 11c of the substrate support 11 when processing the substrate. In one embodiment, the second feature pattern 72 may reflect the pattern of the surface structure of the electrostatic chuck 51. The second feature pattern 72 may have a center that reflects the central position of the electrostatic chuck 51 when processing the substrate. In one embodiment, the extractor 2b1 may be configured to extract the second feature pattern 72 by calculating a difference between the image 7 and an image obtained by performing a blurring process on the image 7. The blurring process is a process of averaging one pixel of multiple pixels that make up the image with pixels adjacent to the one pixel.

[0073] In one embodiment, the second feature pattern 72 may reflect the pattern of the first protrusions 51c and / or the plurality of second protrusions 51d of the electrostatic chuck 51. In one embodiment, the second feature pattern 72 may reflect the pattern of deposits Wa formed on the upper surface of the substrate W. A temperature difference may occur between a first region of the substrate W located on the first protrusions 51c and / or the plurality of second protrusions 51d and a second region of the substrate W not located on the first protrusions 51c and / or the plurality of second protrusions 51d. A difference in the amount of deposits Wa formed on the upper surface of the first region and the second region may occur depending on the temperature difference. Therefore, the second feature pattern 72 may reflect the difference in the amount of deposits Wa. In the example shown in FIG. 12, the second feature pattern 72 reflects the pattern of deposits Wa formed on the upper surface of the substrate W so as to reflect the pattern 751d of the plurality of second protrusions 51d.

[0074] Calculation unit 2b2 is configured to calculate, based on the first feature pattern and the second feature pattern, the positional relationship between the position of substrate support unit 11 and the position of substrate W when processing is performed on the substrate. In the example shown in Fig. 12, calculation unit 2b2 is configured to calculate, based on the first feature pattern 71 and the second feature pattern 72, the positional relationship between the position of substrate support unit 11 and the position of substrate W when processing is performed on the substrate.

[0075] In one embodiment, the calculation unit 2b2 may be configured to calculate the positional relationship between the center position 11c of the substrate support 11 and the center position of the substrate W when processing is performed on the substrate, based on a first center position 71a identified from the first feature pattern 71 and a second center position 72a identified from the second feature pattern 72. In one example, since the first feature pattern 71 reflects the edge 70 of the substrate W, the center position of the substrate W is calculated as the first center position 71a identified from the first feature pattern 71.

[0076] In one embodiment, the first central position 71a may be defined as a third reference position, and the second central position 72a may be defined as the third position. The memory unit 2a2 is configured to store a predetermined third reference position of the substrate W to be compared with the third position. The controller 2 can obtain the third deviation amount from the positional relationship between the central position 11c of the substrate support unit 11 and the central position of the substrate W when processing is performed on the substrate.

[0077] 12, the second feature pattern 72 reflects a pattern 751d of a plurality of second protrusions 51d, which are arranged at approximately equal intervals along a circle having a center that reflects the central position 11c of the substrate support part 11 when the substrate is being processed. Therefore, the central position 11c of the substrate support part 11 when the substrate is being processed is calculated as the second central position 72a, which is the central position of the circle.

[0078] 13, another exemplary embodiment for extracting a first characteristic pattern 71 and extracting a second characteristic pattern 72A and / or a second characteristic pattern 72B from an image 7A will be described below in terms of differences from the above-described exemplary embodiment for extracting the first characteristic pattern 71 and the second characteristic pattern 72 from an image 7A.

[0079] The second feature pattern 72A may reflect the pattern of the gas holes 5c of the electrostatic chuck 51. A temperature difference may occur between a first region of the substrate W located above the gas holes 5c and a second region not located above the gas holes 5c. A difference in the amount of deposit Wa formed on the upper surface of the first region and that of the second region may occur depending on the temperature difference. Therefore, the second feature pattern 72A may reflect the difference in the amount of deposit Wa. In the example shown in FIG. 13 , the second feature pattern 72A reflects the pattern of deposit Wa formed on the upper surface of the substrate W, which reflects the pattern 75c of the gas holes 5c.

[0080] 13, the second feature pattern 72A reflects a pattern 75c of the plurality of gas holes 5c and is arranged at the vertices of a hexagon having a center that reflects the central position 11c of the substrate support 11 when the substrate is being processed. In one example, the hexagon is a regular hexagon. The central position 11c of the substrate support 11 when the substrate is being processed is calculated as the second central position 72a, which is the central position of the hexagon.

[0081] In one embodiment, the second feature pattern 72B may reflect the pattern of the pin holes 5d of the electrostatic chuck 51. A temperature difference may occur between a first region of the substrate W located over the pin holes 5d and a second region not located over the pin holes 5d. A difference in the amount of deposit Wa formed on the upper surface of the first region and that of the second region may occur depending on the temperature difference. Therefore, the second feature pattern 72B may reflect the difference in the amount of deposit Wa. In the example shown in FIG. 13 , the second feature pattern 72B reflects the pattern of deposit Wa formed on the upper surface of the substrate W so as to reflect the pattern 75d of the pin holes 5d.

[0082] 13, the second feature pattern 72B reflects a pattern 75d of multiple pinholes 5d and is located at the vertices of a triangle having a center that reflects the center position 11c of the substrate support 11 when the substrate is being processed. In one example, the triangle is an equilateral triangle. The center position 11c of the substrate support 11 when the substrate is being processed is calculated as the second center position 72a, which is the center position of the triangle.

[0083] 14, a further exemplary embodiment in which a first feature pattern 71 and a second feature pattern 72C are extracted from an image 7C will be described below. In the following description, the further exemplary embodiment will be described from the perspective of differences from the above-described exemplary embodiment in which the first feature pattern 71 and the second feature pattern 72 are extracted from an image 7C.

[0084] The second feature pattern 72C may reflect the pattern of the first protrusions 51c and / or the plurality of second protrusions 51d of the electrostatic chuck 51. In one embodiment, the second feature pattern 72C may reflect a pattern formed on the upper surface of the substrate W by an etching process, which is a process for the substrate. A temperature difference may occur between a first region of the substrate W located on the first protrusions 51c and / or the plurality of second protrusions 51d and a second region not located on the first protrusions 51c and / or the plurality of second protrusions 51d. A difference in etching rate may occur between the first region and the second region depending on the temperature difference. Therefore, the second feature pattern 72C may reflect a difference in the amount of etching. In the example shown in FIG. 14, the second feature pattern 72C reflects a pattern formed on the upper surface of the substrate W by an etching process that reflects the pattern 751c of the first protrusions 51c.

[0085] In the example shown in FIG. 14 , the second feature pattern 72C reflects the pattern 751c of the first convex portions 51c and has a ring shape with its center reflecting the center position 11c of the substrate support member 11 during processing of the substrate. The pattern 751c of the first convex portions 51c may have a ring shape that follows the outer edge of the substrate support surface 11a, and the second feature pattern 72C may reflect this ring shape. The center position 11c of the substrate support member 11 during processing of the substrate is calculated as the second center position 72a, which is the center position of the ring shape of the second feature pattern 72C. Note that the center position 11c of the substrate support member 11 during processing of the substrate may be calculated from the second feature pattern 72C that reflects the pattern of multiple second convex portions 51d instead of or in addition to the pattern of the first convex portions 51c.

[0086] 15 is a diagram showing an exemplary embodiment illustrating the positional relationship between the center position of the substrate and the center position of the pattern. The control unit 2 may be configured to obtain the third amount of deviation based on the positional relationship between the position of the substrate support unit 11 and the position of the substrate W when processing is being performed on the substrate. In this case, as described above, the position of the substrate support unit 11 when processing is being performed on the substrate may be defined as the third reference position, and the center position of the pattern may be defined as the third position. In one embodiment, the control unit 2 may be configured to obtain the third amount of deviation based on the positional relationship between the center position 11c of the substrate support unit 11 and the center position of the substrate W when processing is being performed on the substrate. If the third amount of deviation is greater than a threshold value, the control unit 2 determines that a positional deviation of the substrate W has occurred.

[0087] 15 shows the position of the second central position 72a in an XY Cartesian coordinate system with the first central position 71a as its center. In the X-axis direction, the second central position 72a is shifted by X1 from the first central position 71a. In the Y-axis direction, the second central position 72a is shifted by Y1 from the first central position 71a. In this case, the control unit 2 may acquire X1 and Y1 as the third shift amount. The control unit 2 may acquire the distance between the first central position 71a and the second central position 72a, which is calculated by the square root of the sum of the squares of X1 and Y1, as the third shift amount.

[0088] 16 is a diagram showing the configuration of an imaging unit according to another exemplary embodiment. The second measuring device CM2 may include an imaging unit 65. The imaging unit 65 has a field of view that includes the edge of the substrate W. The imaging unit 65 is configured to acquire an image of the substrate W. In the example shown in FIG. 16, the imaging unit 65 is disposed below the substrate W supported by the substrate chuck 61.

[0089] The substrate chuck 61 is configured to be able to rotate the substrate W supported thereon. In the example shown in FIG. 16 , the substrate chuck 61 rotates the substrate W supported thereon clockwise when viewed from above. The imaging unit 65 may have a field of view that is capable of imaging a portion of the edge of the substrate W. In one example, the imaging unit 65 may be a line scan camera. The longitudinal direction of the line scan camera is perpendicular to the tangential direction of the substrate W. In this case, the substrate W is rotated by the substrate chuck 61, so that the imaging unit 65 can include the entire circumference of the edge of the substrate W in its field of view.

[0090] FIG. 17 is a diagram schematically illustrating an image of a substrate after processing has been performed on the substrate according to yet another exemplary embodiment. Image 7D shown in FIG. 17 is an image acquired by the imaging unit 65 of the substrate W rotating on the substrate chuck 61. In image 7D, the image of the substrate W is acquired in a strip shape. Hereinafter, with reference to FIG. 17, a still further exemplary embodiment in which a first feature pattern 71 and a second feature pattern 72D are extracted from image 7D will be described. In the following description, this still further exemplary embodiment will be described from the perspective of differences from the above-described exemplary embodiment in which the first feature pattern 71 and the second feature pattern 72 are extracted from image 7D.

[0091] In one embodiment, the second feature pattern 72D may reflect the pattern of deposits Wb. The deposits Wb are formed on the underside of the substrate W by processing the substrate. As described above, the pattern of deposits Wb has an inner edge on the underside of the substrate W that is inward relative to the edge of the substrate W. This inner edge may be reflected on the underside of the substrate W by the outer edge of the first protrusion 51c during processing of the substrate. In one embodiment, the extractor 2b1 may be configured to extract the second feature pattern 72D by subtracting the image 7D from an image of the substrate W before processing is applied to the substrate.

[0092] The substrate W may have a notch Wn at the edge of the substrate W. The notch Wn may be, for example, a notch (a U-shaped, V-shaped groove, etc.). As shown in FIG. 17, the imaging unit 65 acquires an image 7Wn of the notch Wn as part of an image 7D. The imaging unit 65 acquires an image 7D of the entire periphery of the edge of the substrate W, based on the image 7Wn of the notch Wn.

[0093] Fig. 18 is a diagram showing an example of a process for calculating the positional relationship between the position of the substrate and the position of the pattern. Image 7E shown in Fig. 18 is an image obtained by converting image 7D so that the substrate W in image 7D has a circular shape. Fig. 19 is a diagram showing another example of a process for calculating the positional relationship between the position of the substrate and the position of the pattern.

[0094] In one embodiment, calculation unit 2b2 may be configured to determine the distance between the inner edge of second feature pattern 72D and edge 70 of first feature pattern 71 in each of three or more radial directions of edge 70 of first feature pattern 71. Calculation unit 2b2 may be configured to calculate, from the distance in each of the three or more radial directions, the positional relationship between the position of substrate support member 11 and the position of substrate W when processing is performed on the substrate.

[0095] In the example shown in FIG. 18, the calculation unit 2b2 is configured to calculate the distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 in each of eight radial directions of the edge 70. The eight radial directions are radial direction D1, radial direction D2, radial direction D3, radial direction D4, radial direction D5, radial direction D6, radial direction D7, and radial direction D8. The angle between any two adjacent radial directions among the eight radial directions D1 to D8 is 45 degrees. The radial direction D1 and the radial direction D5 are 180 degrees opposite to each other. The radial direction D5 is at a position corresponding to the image 7Wn of the cutout portion Wn. The radial direction D2 and the radial direction D6 are 180 degrees opposite to each other. The radial direction D3 and the radial direction D7 are 180 degrees opposite to each other. The radial direction D4 and the radial direction D8 are 180 degrees opposite to each other.

[0096] In one embodiment, the calculation unit 2b2 may be configured to calculate the average distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71. In the example shown in FIG. 18 , the calculation unit 2b2 may be configured to calculate the average distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 from each of the radial directions D2, D4, D6, and D8. The control unit 2 may be configured to obtain a third deviation amount based on the average distance. In this case, the average distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 in each of the radial directions D2, D4, D6, and D8 may be defined as the third position. Furthermore, a predetermined average distance may be defined as the third reference position.

[0097] FIG. 19 is a diagram illustrating another example of a process for calculating the positional relationship between the substrate position and the pattern position. In one embodiment, the calculation unit 2b2 may be configured to calculate the distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 in each of three or more radial directions. The calculation unit 2b2 may calculate a first angle and a second angle. The first angle is the angle between a first radial direction and a second radial direction different from the first radial direction, among the three or more radial directions. The second angle is the angle between the second radial direction and a third radial direction different from the second radial direction. The calculation unit 2b2 may calculate a sine wave function using the distances in each of the three or more radial directions, the first angle, and the second angle. The sine wave function interpolates the distance between the inner edge and the edge in the radial direction within the first angle and the distance between the inner edge and the edge in the radial direction within the second angle. The calculation unit 2b2 may be configured to correct the distance in each of the three or more radial directions using the sine wave function.

[0098] 19, the calculation unit 2b2 is configured to calculate the distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 in each of the radial directions D1 to D4 and D6 to D8. Nos. 1 to 4 and 6 to 8 in Fig. 19 indicate the distance in each of the radial directions D1 to D4 and D6 to D8. Note that the distance in the radial direction D5 is not measured because it interferes with the image 7Wn of the cutout portion Wn.

[0099] In the example shown in FIG. 19, the angle between two adjacent radial directions among the eight radial directions D1 to D8 is 45 degrees. As a result, the calculator 2b2 calculates a sine wave function based on the distance in each of the radial directions D1 to D4, D6 to D8 and the 45-degree angle. In one example, the calculator 2b2 may calculate the sine wave function using the least squares method from the distance in each of the radial directions D1 to D4, D6 to D8 and the 45-degree angle. The distance in each of the radial directions D1 to D4, D6 to D8 can be corrected using the sine wave function. The calculator 2b2 may be configured to calculate the positional relationship between the position of the substrate support member 11 and the position of the substrate W when processing the substrate, based on the corrected distance and the 45-degree angle.

[0100] The control unit 2 is configured to estimate in which of the first period and / or the second period and the intermediate period the positional deviation of the substrate W occurred, using the first deviation amount and / or the second deviation amount and the third deviation amount. Hereinafter, control of the substrate processing system PS by the control unit 2 and a substrate processing method will be described with reference to Fig. 20. Fig. 20 is a flowchart showing a substrate processing method according to an example embodiment.

[0101] In one embodiment, the processing method shown in FIG. 20 (hereinafter referred to as "method MT") starts with step STa. In step STa, the substrate W is transported from outside the processing chamber 10 to a region above the substrate support 11. In one example, the control unit 2 controls the transport module TM to transport the substrate W from the vacuum chamber VCH to a region above the plurality of lifter pins 5e. In step STb, a first deviation amount of the substrate W in step STa is acquired. In one example, in step STb, the first deviation amount of the substrate W in step STa is acquired by the first measuring instrument CM1 described above. In one embodiment, the method MT may include step STc. In step STc, it is determined whether the first deviation amount is greater than a threshold value. In one example, the control unit 2 determines whether the first deviation amount is greater than a predetermined threshold value. If the first deviation amount is greater than the threshold value in step STc, the control unit 2 estimates that the positional deviation of the substrate W occurred in the first period.

[0102] In one embodiment, the control unit 2 may be configured to adjust the transport conditions for the substrate W when the first deviation amount is greater than a threshold value. In this case, the method MT includes a step STd. The step STd is executed when it is determined in the step STc that the first deviation amount is greater than the threshold value (when the result of the determination in the step STc of FIG. 20 is "YES"). In the step STd, the transport conditions for the substrate W are adjusted. The transport conditions for the substrate W may include the transport speed, the acceleration / deceleration of the transport, and / or the transport path. The control unit 2 may adjust the transport conditions during the first period before the first deviation amount is acquired. The control unit 2 may adjust the transport conditions during the first period and the second period. After the transport conditions are adjusted in the step STd, the method MT ends.

[0103] The adjustment of the transport conditions may include reducing the transport speed, reducing the acceleration / deceleration of the transport, and / or changing the turning radius of the transport trajectory. In one embodiment, a correlation between the transport speed, the acceleration / deceleration of the transport, or the turning radius of the transport trajectory and the first deviation amount may be acquired in advance. In this case, the adjustment of the transport conditions is performed based on the correlation so that the first deviation amount is equal to or less than a threshold value. The adjustment of the transport conditions may be performed in process STd, process STj, and / or process STm. Process STj and process STm will be described later.

[0104] In one embodiment, step STe is performed when it is determined in step STc that the first deviation amount is equal to or less than the threshold value (when the result of the determination in step STc in FIG. 20 is "NO"). If the transfer module TM includes a vacuum pad, step STe may include releasing the vacuum suction to release the substrate W from the vacuum pad. In one example, step STe includes lowering the plurality of lifter pins 5e and / or electrostatically attracting the substrate W to the electrostatic chuck 51. When the plurality of lifter pins 5e are lowered, the substrate W supported on the plurality of lifter pins 5e moves from a region above the substrate support 11 to a region above the substrate support 11. When the substrate W is electrostatically attracted to the electrostatic chuck 51, a voltage is applied to the electrostatic electrode 51b. In step STe, a process is performed on the substrate W on the substrate support 11. As described above, the process on the substrate includes an etching process or a process of forming a deposit on the surface of the substrate W.

[0105] Step STf is performed after step STe. In one example, step STf includes removing electrostatic charges from the electrostatic chuck 51 and / or raising the plurality of lifter pins 5e to release the substrate W from the electrostatic chuck 51. In removing electrostatic charges from the electrostatic chuck 51, first, the application of a voltage for electrostatic attraction to the electrostatic electrode 51b is stopped, then a voltage of a different polarity from the voltage used for electrostatic attraction is applied to the electrostatic electrode 51b, and finally, the application of the voltage of the different polarity is stopped. In raising the plurality of lifter pins 5e, the substrate W is supported on the plurality of lifter pins 5e and moved from a region on the substrate support 11 to a region above the substrate support 11. If the transfer module TM includes a vacuum pad, step STf may include vacuum-attaching the substrate W to the vacuum pad. In step STf, the substrate W is transferred from a region above the substrate support 11 to the outside of the processing chamber 10. In one example, the controller 2 controls the transfer module TM to transfer the substrate W from the area above the plurality of lifter pins 5e to the vacuum chamber VCH.

[0106] In process STg, a second deviation amount of the substrate W in process STf is acquired. In one example, in process STg, the second deviation amount of the substrate W in process STf is acquired by the first measuring instrument CM1 described above. In process STh, a third deviation amount of the substrate W in process STe is acquired. In one example, in process STh, the third deviation amount of the substrate W in process STh is acquired by the second measuring instrument CM2 described above. The process STh may include transport of the substrate W to the second measuring instrument CM2 by the transport module TM and the loader module LM.

[0107] In one embodiment, the method MT may include a step STi. In the step STi, it is determined whether the third amount of deviation is greater than a threshold. In one example, the controller 2 determines whether the third amount of deviation is greater than a predetermined threshold. If the first amount of deviation in the step STc is equal to or less than the threshold and the third amount of deviation in the step STi is greater than the threshold, the controller 2 estimates that the positional deviation of the substrate W occurred in the intermediate period.

[0108] In one embodiment, the control unit 2 may be configured to adjust the transport conditions and / or the control parameters associated with the third amount of deviation when the first amount of deviation is equal to or less than a threshold and the third amount of deviation is greater than the threshold. In this case, the method MT includes a step STj. The step STj is executed when it is determined in the step STi that the third amount of deviation is greater than the threshold (when the result of the determination in the step STi in FIG. 20 is "YES"). In the step STj, the control parameters associated with the transport conditions and / or the third amount of deviation are adjusted. After the control parameters associated with the transport conditions and / or the third amount of deviation are adjusted in the step STj, the method MT ends.

[0109] In an embodiment, the control parameters associated with the third displacement amount may include a condition for lowering the multiple lifter pins 5e and / or a condition for electrostatically attracting the substrate W to the electrostatic chuck 51. The condition for lowering the multiple lifter pins 5e may include a speed of lowering the multiple lifter pins 5e, an acceleration / deceleration speed of lowering the multiple lifter pins 5e, or a timing of lowering the multiple lifter pins 5e. The condition for electrostatically attracting the substrate W to the electrostatic chuck 51 may include a maximum value of a voltage applied to the electrostatic electrode 51b, a rate of change with time of the voltage applied to the electrostatic electrode 51b, or a timing of applying a voltage to the electrostatic electrode 51b.

[0110] The adjustment of the control parameters in step STj may include reducing the speed of descent of the multiple lifter pins 5e, reducing the acceleration / deceleration of descent of the multiple lifter pins 5e, and / or postponing the timing of descent of the multiple lifter pins 5e. In one embodiment, a correlation between the speed of descent of the multiple lifter pins 5e or the acceleration / deceleration of descent of the multiple lifter pins 5e and the third deviation amount may be acquired in advance. In this case, in step STj, the control parameters are adjusted based on the correlation so that the third deviation amount is equal to or less than a threshold value.

[0111] The adjustment of the transport conditions in the process STj may include reducing the maximum value of the voltage applied to the electrostatic electrode 51b, reducing the rate of change of the voltage applied to the electrostatic electrode 51b over time, and / or postponing the timing of applying the voltage to the electrostatic electrode 51b. In one embodiment, a correlation between the maximum value of the voltage applied to the electrostatic electrode 51b or the rate of change of the voltage applied to the electrostatic electrode 51b over time and the third deviation amount may be obtained in advance. In this case, in the process STj, the control parameters are adjusted based on the correlation so that the third deviation amount is equal to or less than a threshold value.

[0112] In one embodiment, the control parameter associated with the third deviation amount may include a vacuum suction release condition for releasing the substrate W from the vacuum pad. In this case, the substrate W is transported while being vacuum-sucked to the vacuum pad on the end effector FK11, 12. The vacuum suction release condition for the substrate W from the vacuum pad may include a maximum vacuum suction negative pressure, a rate of change of the vacuum suction negative pressure with respect to time, or a timing for releasing from vacuum suction.

[0113] The adjustment of the control parameters in step STj may include reducing the maximum negative pressure of vacuum suction, reducing the rate of change of the negative pressure of vacuum suction with respect to time, or postponing the timing of release from vacuum suction. In one embodiment, a correlation between the maximum negative pressure of vacuum suction or the rate of change of the negative pressure of vacuum suction with respect to time and the third deviation amount may be obtained in advance. In this case, in step STj, the control parameters are adjusted based on the correlation so that the third deviation amount is equal to or less than a threshold value.

[0114] The controller 2 may estimate that the positional deviation of the substrate W occurred in the first period if the first deviation amount in the process STc is equal to or smaller than the threshold value and the third deviation amount in the process STi is greater than the threshold value. In one example, the controller 2 may estimate that the positional deviation of the substrate W occurred in the first period if the third deviation amount in the process STi is greater than the threshold value when processing another substrate W after adjusting the control parameters associated with the third deviation amount. In this case, the controller 2 may adjust the transport conditions during the first period after the first deviation amount is acquired.

[0115] In one embodiment, the method MT may include a step STk. The step STk is performed when it is determined in the step STi that the third deviation amount is smaller than the threshold value (when the result of the determination in the step STi in FIG. 20 is "NO"). In the step STk, it is determined whether the second deviation amount is larger than the threshold value. In one example, the control unit 2 determines whether the second deviation amount is larger than a predetermined threshold value. When the first deviation amount is equal to or smaller than the threshold value in the step STc, the third deviation amount is equal to or smaller than the threshold value in the step STi, and the second deviation amount is larger than the threshold value in the step STk, the control unit 2 estimates that the positional deviation of the substrate W occurred in the second period.

[0116] In one embodiment, the control unit 2 may be configured to adjust the transport conditions and / or the control parameters associated with the second amount of deviation when the first amount of deviation is equal to or less than a threshold, the third amount of deviation is equal to or less than a threshold, and the second amount of deviation is greater than the threshold. In this case, the method MT includes a step STm. The step STm is executed when it is determined in the step STk that the second amount of deviation is greater than the threshold (when the result of the determination in the step STk in FIG. 20 is "YES"). In the step STm, the transport conditions and / or the control parameters associated with the second amount of deviation are adjusted. After the transport conditions and / or the control parameters associated with the second amount of deviation are adjusted in the step STm, the method MT ends.

[0117] In one embodiment, the control parameters associated with the second displacement amount may include a condition for removing electrostatic charge from the electrostatic chuck 51 and / or a condition for raising the multiple lifter pins 5e to release the substrate W from the electrostatic chuck 51. The condition for removing electrostatic charge from the electrostatic chuck 51 may include a maximum value of a voltage of a polarity different from that applied during electrostatic attraction to the electrostatic electrode 51b, a rate of change with respect to time of the voltage of the different polarity applied to the electrostatic electrode 51b, or a timing for stopping the application of the voltage of the different polarity to the electrostatic electrode 51b. The condition for raising the multiple lifter pins 5e may include a speed at which the multiple lifter pins 5e rise, an acceleration / deceleration rate at which the multiple lifter pins 5e rise, or a timing at which the multiple lifter pins 5e rise.

[0118] The adjustment of the control parameters in step STm may include reducing the lifting speed of the multiple lifter pins 5e, reducing the acceleration / deceleration rate of the lifting of the multiple lifter pins 5e, and / or postponing the timing of the lifting of the multiple lifter pins 5e. In one embodiment, a correlation between the lifting speed of the multiple lifter pins 5e or the acceleration / deceleration rate of the lifting of the multiple lifter pins 5e and the second deviation amount may be obtained in advance. In this case, in step STm, the control parameters are adjusted based on the correlation so that the second deviation amount is equal to or less than a threshold value.

[0119] The adjustment of the control parameters in step STm may include reducing the maximum value of the voltage of a polarity different from that applied during electrostatic attraction to the electrostatic electrode 51b, reducing the rate of change with time of the voltage of the different polarity applied to the electrostatic electrode 51b, or postponing the timing for stopping the application of the voltage of the different polarity to the electrostatic electrode 51b. In one embodiment, a correlation between the second deviation amount and the maximum value of the voltage of a polarity different from that applied during electrostatic attraction to the electrostatic electrode 51b or the rate of change with time of the voltage of the different polarity applied to the electrostatic electrode 51b may be acquired in advance. In this case, in step STm, the control parameters are adjusted based on the correlation so that the second deviation amount is equal to or less than a threshold value.

[0120] In one embodiment, the control parameter associated with the second deviation amount may include vacuum suction conditions for vacuum-sucking the substrate W to the vacuum pad. In this case, the substrate W is transported while being vacuum-sucked to the vacuum pad on the end effector FK11, 12. The vacuum suction conditions for the substrate W to be vacuum-sucked to the vacuum pad may include the maximum negative pressure of vacuum suction, the rate of change of the negative pressure of vacuum suction with respect to time, or the timing of vacuum suction.

[0121] The adjustment of the control parameters in step STm may include reducing the maximum negative pressure of vacuum suction, reducing the rate of change of the negative pressure of vacuum suction with respect to time, or postponing the timing of vacuum suction. In one embodiment, a correlation between the maximum negative pressure of vacuum suction or the rate of change of the negative pressure of vacuum suction with respect to time and the second deviation amount may be obtained in advance. In this case, in step STm, the control parameters are adjusted based on the correlation so that the second deviation amount is equal to or less than a threshold value.

[0122] The control unit 2 may estimate that the positional deviation of the substrate W occurred in the second period if the first deviation amount is equal to or smaller than the threshold value in process STc, the third deviation amount is equal to or smaller than the threshold value in process STi, and the second deviation amount is larger than the threshold value in process STk. In one example, the control unit 2 may estimate that the positional deviation of the substrate W occurred in the second period if the second deviation amount is larger than the threshold value in process STk when processing another substrate W after adjusting the control parameters associated with the second deviation amount. In this case, the control unit 2 may adjust the transport conditions during the second period before the second deviation amount is acquired.

[0123] If it is determined that the first deviation amount is equal to or less than the threshold value in step STc, the third deviation amount is equal to or less than the threshold value in step STi, and the second deviation amount is equal to or less than the threshold value in step STk (if the determination result in step STk in FIG. 20 is "NO"), the method MT ends. In this case, the control unit 2 determines that no positional deviation of the substrate W has occurred.

[0124] In one embodiment, the interface 2a3 may present to the operator at least one measure for making adjustments to prevent misalignment of the substrate W. The interface 2a3 may acquire a measure selected by the operator from the at least one measure. In one embodiment, the interface 2a3 may present to the operator at least one measure for making adjustments to prevent misalignment of the substrate W in process STd, process STj, and / or process STm.

[0125] In one example, the interface 2a3 displays, on the external device CU, at least one measure for adjusting the conveying conditions, the control parameter associated with the first deviation amount, and / or the control parameter associated with the second deviation amount. Furthermore, the interface 2a3 acquires, via the external device CU, a measure selected by the operator from the at least one measure displayed on the interface 2a3. The at least one measure may include multiple measures. The operator may select some of the multiple measures, or may select all of the multiple measures.

[0126] In one embodiment, the substrate W may be a product substrate, and the substrate processing system PS may be configured to continuously process a plurality of product substrates W. In this case, the control unit 2 may be configured to estimate, for at least one of the plurality of substrates W, whether a positional shift of the substrate W occurred in the first period and / or the second period or in the intermediate period. The method MT may be performed on at least one of the plurality of substrates W. In one example, the method MT may be performed each time a predetermined number of substrates W or two or more substrates W are continuously processed. In one embodiment, the substrate W in the method MT may be a dummy substrate. For example, the method MT may be performed on the dummy substrate each time a predetermined number of substrates W or two or more substrates W are continuously processed. The method MT may be performed on the dummy substrate during setup of the substrate processing system PS or maintenance of the substrate processing system PS.

[0127] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0128] The first measuring unit CM1 may be configured to acquire only a first position of the substrate W during a first period in which the substrate W is transferred by the transfer module VTM from outside the processing chamber 10 to a region above the substrate support 11. The memory unit 2a2 may be configured to store only a predetermined first reference position of the substrate W to be compared with the first position and a predetermined third reference position of the substrate W to be compared with the third position. The control unit 2 may be configured to estimate in which of the first period and the third period the positional deviation amount of the substrate W occurred, using only a first deviation amount of the first position from the first reference position and a third deviation amount of the third position from the third reference position.

[0129] The second measuring device CM2 may be configured to acquire only the second position of the substrate W during a second period in which the substrate W is transferred by the transfer module VTM from outside the processing chamber 10 to a region above the substrate support 11. The memory unit 2a2 may be configured to store only a predetermined second reference position of the substrate W to be compared with the first position and a predetermined third reference position of the substrate W to be compared with the third position. The control unit 2 may be configured to estimate in which of the second period and the third period the positional deviation amount of the substrate W occurred, using only the second amount of deviation of the second position from the second reference position and the third amount of deviation of the third position from the third reference position.

[0130] The second measuring device CM2 may be connected to the vacuum chamber VCH, or may be connected to the reduced pressure chambers DCH1 and DCH2.

[0131] The method MT includes both a process STb in which a first deviation amount of the substrate W is obtained in a process STa, and a process STg in which a second deviation amount of the substrate W is obtained in a process STf, but it is sufficient to include either the process STb or the process STg.

[0132] 12 may reflect the pattern of the plurality of second protrusions 51d of the electrostatic chuck 51 and may also reflect a pattern formed on the upper surface of the substrate W by an etching process, which is a process for the substrate. A second feature pattern 72A shown in FIG. 13 may reflect the pattern of the plurality of gas holes 5c of the electrostatic chuck 51 and may also reflect a pattern formed on the upper surface of the substrate W by an etching process, which is a process for the substrate. A second feature pattern 72B shown in FIG. 13 may reflect the pattern of the plurality of pin holes 5d of the electrostatic chuck 51 and may also reflect a pattern formed on the upper surface of the substrate W by an etching process, which is a process for the substrate. A second feature pattern 72C shown in FIG. 14 may reflect the pattern of the first protrusions 51c of the electrostatic chuck 51 and may also reflect a pattern of deposits Wa formed on the upper surface of the substrate W.

[0133] In one embodiment, the first measuring instrument CM1 may include an image sensor configured to acquire an image of the substrate W instead of the optical sensors 81a, 81b. In one example, the first measuring instrument CM1 may include an image sensor having a configuration similar to that of the imaging unit 60. The image sensor has a field of view that includes the transport path P of the substrate W. The image sensor may be a line scan camera. The direction of the transport path P in the field of view of the image sensor and the longitudinal direction of the line scan camera are perpendicular to each other. In one embodiment, the first measuring instrument CM1 may acquire a first feature pattern 71 that reflects an edge 70 of the substrate W during a first period as a first position.

[0134] FIG. 21 is a diagram illustrating a substrate processing system according to another exemplary embodiment. FIG. 22 is a diagram illustrating another first measuring instrument according to another exemplary embodiment. The substrate processing system PS illustrated in FIG. 21 includes a first measuring instrument CM1A. In one embodiment, the first measuring instrument CM1A is connected to the vacuum chamber VCH. In the example illustrated in FIG. 21, the first measuring instrument CM1A is disposed along an edge along the short direction of the vacuum chamber VCH. The first measuring instrument CM1A may also be disposed along an edge along the long direction of the vacuum chamber VCH. The first measuring instrument CM1A may also be disposed inside the vacuum chamber VCH.

[0135] In one embodiment, the first measuring instrument CM1A includes multiple image sensors. In one example, the multiple image sensors are composed of line scan cameras 91, 92, and 93. The line scan cameras 91, 92, and 93 are arranged so that their respective longitudinal directions intersect at a reference point OA. In the example shown in FIG. 22 , the angle d1 formed by the respective longitudinal directions of the line scan cameras 91 and 92, the angle d2 formed by the respective longitudinal directions of the line scan cameras 92 and 93, and the angle d3 formed by the respective longitudinal directions of the line scan cameras 93 and 91 are 120 degrees. The line scan cameras 91, 92, and 93 are arranged at equal intervals from the reference point OA. The line scan cameras 91, 92, and 93 are configured to capture an image of the edge of the substrate W passing through the measurement region of the first measuring instrument CM1A.

[0136] 22, the substrate W includes an orientation flat as the cutout Wn. In one embodiment, the line scan cameras 91, 92, and 93 are positioned to avoid the cutout Wn. An angle d is formed between a line connecting the cutout Wn and the reference point OA and a line connecting the line scan camera 91 closest to the cutout Wn and the reference point OA. The magnitude of the angle d is determined so that the line scan camera 91 does not capture an image of the cutout Wn when the substrate W passes through the first measuring instrument CM1A.

[0137] Each of the line scan cameras 91, 92, and 93 captures an image of the inside edge and the outside edge of the substrate W. When the lengths of the inside edges (or the outside edges) in the images captured by the line scan cameras 91, 92, and 93 are equal to each other, the substrate W is positioned so that the reference point OA and the center position of the substrate W overlap. The control unit 2 may acquire the lengths of the inside edges in the images captured by the line scan cameras 91, 92, and 93 as first positions. The memory unit 2a2 may store the lengths of the inside edges in the images captured by the line scan cameras 91, 92, and 93 when the reference point OA and the center position of the substrate W overlap as a first reference position.

[0138] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E19] below.

[0139] [E1] a process module having a processing chamber and a substrate support disposed within the processing chamber, the process module configured to perform processing on a substrate on the substrate support; a transfer module having a vacuum chamber connected to the processing chamber and configured to transfer the substrate; a first measurement instrument configured to acquire a first position of the substrate during a first time period when the substrate is transferred by the transfer module from outside the processing chamber to a region above the substrate support and / or a second position of the substrate during a second time period when the substrate is transferred by the transfer module from the region above the substrate support to outside the processing chamber; a second measurement instrument configured to obtain a third position of the substrate on the substrate support during an intermediate time period between the first time period and the second time period; and a memory unit configured to store a predetermined first reference position of the substrate to be compared with the first position and / or a predetermined second reference position of the substrate to be compared with the second position, and a predetermined third reference position of the substrate to be compared with the third position; a control unit configured to estimate in which period of the first period and / or the second period, or the intermediate period, a positional deviation of the substrate occurred, using a first deviation amount of the first position relative to the first reference position and / or a second deviation amount of the second position relative to the second reference position, and a third deviation amount of the third position relative to the third reference position; A substrate processing system comprising:

[0140] [E2] The substrate processing system according to E1, wherein the control unit is configured to adjust a transport condition for the substrate when the first deviation amount is greater than a threshold value.

[0141] [E3] The substrate processing system according to E1 or E2, wherein the control unit is configured to adjust the transport conditions and / or a control parameter associated with the third deviation amount when the first deviation amount is equal to or less than a threshold value and the third deviation amount is greater than a threshold value.

[0142] [E4] The substrate support includes: a plurality of lifter pins configured to raise and lower the substrate between the region above the substrate support and a region on the substrate support; an electrostatic chuck including an electrostatic electrode to which a voltage is applied for holding the substrate supported on the substrate support, the control parameter associated with the third displacement amount includes a lowering condition of the plurality of lifter pins and / or an electrostatic attraction condition of the substrate to the electrostatic chuck. A substrate processing system as described in E3.

[0143] [E5] The transfer module includes: an end effector configured to support the substrate thereon; a vacuum pad configured to vacuum-suck the substrate on the end effector; the control parameter associated with the third displacement amount includes a release condition of the substrate from the vacuum pad; The substrate processing system according to E3 or E4.

[0144] [E6] the control unit is configured to adjust the transport condition and / or a control parameter associated with the second deviation amount when the first deviation amount is equal to or smaller than a threshold, the third deviation amount is equal to or smaller than a threshold, and the second deviation amount is larger than a threshold; the control parameter associated with the second displacement amount includes a release condition of the substrate from the electrostatic chuck and / or a lift condition of the plurality of lifter pins. A substrate processing system as described in E4.

[0145] [E7] the control unit is configured to adjust the transport condition and / or a control parameter associated with the second deviation amount when the first deviation amount is equal to or smaller than a threshold, the third deviation amount is equal to or smaller than a threshold, and the second deviation amount is larger than a threshold; the control parameter associated with the second displacement amount includes a vacuum suction condition of the substrate to the vacuum pad; A substrate processing system as described in E5.

[0146] [E8] the first measurement device includes at least two optical sensors or image sensors configured to acquire images of the substrate; The substrate processing system according to any one of E1 to E7.

[0147] [E9] the first measuring device is configured to obtain a center position of the substrate; the first reference position and / or the second central position is defined by a central position of the substrate; The substrate processing system according to any one of E1 to E8.

[0148] [E10] the first measurement instrument is configured to provide a measurement region within the vacuum chamber and measure the position of the substrate passing through the measurement region; the transfer module is configured to pass the substrate through the measurement region during a period in which the substrate is transferred from the vacuum chamber to the processing chamber during the first period and / or during a period in which the substrate is transferred from the processing chamber to the vacuum chamber during the second period. The substrate processing system according to any one of E1 to E9.

[0149] [E11] The second measuring device is an imaging unit having a field of view including the transport path of the substrate and configured to acquire an image of the substrate; an extractor configured to extract, from an image of a substrate after a processing operation has been performed on the substrate, a first feature pattern having a center that reflects a central position of the substrate, and to extract a second feature pattern having a center that reflects a central position of the substrate support at the time the processing operation is performed on the substrate; a calculation unit configured to calculate a positional relationship between a position of the substrate support and the position of the substrate on the substrate support during the intermediate period based on the first feature pattern and the second feature pattern, The substrate processing system according to any one of E1 to E10.

[0150] [E12] the calculation unit is configured to calculate a positional relationship between the center position of the substrate support part and the center position of the substrate during the period in which processing is performed on the substrate, based on a first center position identified from the first feature pattern and a second center position identified from the second feature pattern. The substrate processing system according to E11.

[0151] [E13] the substrate support portion includes at least one selected from the group consisting of: a first convex portion having a ring shape and an upper surface that constitutes a substrate support surface; a plurality of second convex portions each having an upper surface that constitutes the substrate support surface and arranged inside the first convex portion; a plurality of gas holes that communicate with a gap between the substrate and the substrate support surface; and a plurality of pin holes into which a plurality of lifter pins for the substrate are inserted; the second characteristic pattern reflects the at least one pattern selected from the group; The substrate processing system according to E11 or E12.

[0152] [E14] a load lock module having a reduced pressure chamber connected to the vacuum chamber; an atmospheric transfer module having an atmospheric chamber connected to the reduced pressure chamber; Further provided with the second measuring device is disposed in the reduced pressure chamber or the atmospheric chamber; The substrate processing system according to any one of E1 to E13.

[0153] [E15] the control unit has a user interface configured to present at least one measure for adjusting the substrate so as to prevent misalignment to the substrate, to an operator, and to acquire a measure selected by the operator from the at least one measure. The substrate processing system according to any one of E1 to E14.

[0154] [E16] the substrate processing system is configured to process a plurality of substrates in succession; the control unit is configured to estimate, for at least one substrate of the plurality of substrates, in which period of the first period and / or the second period, or the intermediate period, a positional deviation of the substrate occurred. The substrate processing system according to any one of E1 to E15.

[0155] [E17] (a) transferring a substrate from outside a processing chamber to an area above a substrate support; (b) performing a process on the substrate on the substrate support; (c) transferring the substrate from the region above the substrate support to outside the processing chamber; (d) acquiring a first positional deviation amount of the substrate in the step (a) and / or a second positional deviation amount of the substrate in the step (c); (d) acquiring a third positional deviation amount of the substrate on the substrate support member in the step (b); (e) using the first displacement amount and / or the second displacement amount and the third displacement amount, to estimate in which of the step (a) and / or the step (c) and the step (b) the displacement of the substrate occurred. Substrate processing method.

[0156] [E18] A program executed by a computer of a substrate processing system to cause the substrate processing system to execute the substrate processing method according to E17.

[0157] [E19] A storage medium storing the program described in E18.

[0158] The substrate processing method according to E17 may be performed by the substrate processing system according to any one of E1 to E16. [Explanation of symbols]

[0159] 2...controller, W...substrate, 2a...computer, 2a2...storage unit, 2b1...extraction unit, 2b2...calculation unit, 5c...multiple gas holes, 5d...multiple pin holes, 5e...multiple lifter pins, 7, 7A, 7C, 7D, 7E...image, 10...processing chamber, 11...substrate support unit, 71a...first center position, 72a...second center position, 51...electrostatic chuck, 51b...electrostatic electrode, 51c...first convex portion, 51d...second convex portion, 60, 65...imaging unit, 71, 72, 72A, 72B, 72 C, 72D...feature pattern, 75c, 75d, 751c, 751d...pattern, 81a, 81b...optical sensor, ACH...atmospheric chamber, CM1, CM1A...first measuring instrument, CM2...second measuring instrument, DCH1, DCH2...decompression chamber, FK11, FK12...end effector, LL1, LL2...load lock module, P...transfer path, PM1 to PM6...process module, PS...substrate processing system, TM...transfer module, VCH...vacuum chamber.

Claims

1. a process module having a processing chamber and a substrate support disposed within the processing chamber, the process module configured to perform processing on a substrate on the substrate support; a transfer module having a vacuum chamber connected to the processing chamber and configured to transfer the substrate; a first measuring instrument configured to obtain a first position of the substrate during a first time period during which the substrate is transferred from outside the processing chamber to a region above the substrate support by the transfer module and / or a second position of the substrate during a second time period during which the substrate is transferred from the region above the substrate support to outside the processing chamber by the transfer module; a second measurement device configured to obtain a third position of the substrate on the substrate support during an intermediate time period between the first time period and the second time period; and a memory unit configured to store a predetermined first reference position of the substrate to be compared with the first position and / or a predetermined second reference position of the substrate to be compared with the second position, and a predetermined third reference position of the substrate to be compared with the third position; a control unit configured to estimate in which period of the first period and / or the second period, or the intermediate period, a positional deviation of the substrate occurred, using a first deviation amount of the first position relative to the first reference position and / or a second deviation amount of the second position relative to the second reference position, and a third deviation amount of the third position relative to the third reference position; A substrate processing system comprising:

2. 2. The substrate processing system according to claim 1, wherein the control unit is configured to adjust a transport condition for the substrate when the first deviation amount is greater than a threshold value.

3. 3. The substrate processing system according to claim 2, wherein the control unit is configured to adjust the transport conditions and / or a control parameter associated with the third deviation amount when the first deviation amount is equal to or less than a threshold value and the third deviation amount is greater than a threshold value.

4. The substrate support includes: a plurality of lifter pins configured to raise and lower the substrate between the region above the substrate support and a region on the substrate support; an electrostatic chuck including an electrostatic electrode to which a voltage is applied for holding the substrate supported on the substrate support, the control parameter associated with the third deviation amount includes a lowering condition of the plurality of lifter pins and / or an electrostatic attraction condition of the substrate to the electrostatic chuck. The substrate processing system according to claim 3 .

5. The transfer module includes: an end effector configured to support the substrate thereon; a vacuum pad configured to vacuum-suck the substrate on the end effector; the control parameter associated with the third displacement amount includes a release condition of the substrate from the vacuum pad; The substrate processing system according to claim 3 .

6. the control unit is configured to adjust the transport condition and / or a control parameter associated with the second deviation amount when the first deviation amount is equal to or smaller than a threshold, the third deviation amount is equal to or smaller than a threshold, and the second deviation amount is larger than a threshold; the control parameter associated with the second displacement amount includes a release condition for the substrate from the electrostatic chuck and / or a lift condition for the plurality of lifter pins. The substrate processing system according to claim 4 .

7. the control unit is configured to adjust the transport condition and / or a control parameter associated with the second deviation amount when the first deviation amount is equal to or smaller than a threshold, the third deviation amount is equal to or smaller than a threshold, and the second deviation amount is larger than a threshold; the control parameter associated with the second displacement amount includes a vacuum suction condition of the substrate to the vacuum pad; The substrate processing system according to claim 5 .

8. the first measurement device includes at least two optical sensors or image sensors configured to acquire images of the substrate; The substrate processing system according to any one of claims 1 to 7.

9. the first measuring device is configured to obtain a center position of the substrate; the first reference position and / or the second center position is defined by a center position of the substrate; The substrate processing system of claim 8 .

10. the first measurement device is configured to provide a measurement region within the vacuum chamber and measure the position of the substrate passing through the measurement region; the transfer module is configured to pass the substrate through the measurement region during a period in which the substrate is transferred from the vacuum chamber to the processing chamber during the first period and / or during a period in which the substrate is transferred from the processing chamber to the vacuum chamber during the second period. The substrate processing system according to any one of claims 1 to 7.

11. The second measuring device is an imaging unit having a field of view including the transport path of the substrate and configured to acquire an image of the substrate; an extractor configured to extract, from an image of a substrate on which a processing operation has been performed, a first feature pattern having a center that reflects a central position of the substrate, and to extract a second feature pattern having a center that reflects a central position of the substrate support at the time the processing operation was performed on the substrate; a calculation unit configured to calculate a positional relationship between a position of the substrate support and the position of the substrate on the substrate support during the intermediate period based on the first feature pattern and the second feature pattern. The substrate processing system according to any one of claims 1 to 7.

12. the calculation unit is configured to calculate a positional relationship between a center position of the substrate support part and a center position of the substrate during the period in which processing is performed on the substrate, based on a first center position identified from the first feature pattern and a second center position identified from the second feature pattern. The substrate processing system of claim 11 .

13. the substrate support portion includes at least one selected from the group consisting of: a first convex portion having an annular shape and an upper surface that constitutes a substrate support surface; a plurality of second convex portions each having an upper surface that constitutes the substrate support surface and arranged inside the first convex portion; a plurality of gas holes that communicate with a gap between the substrate and the substrate support surface; and a plurality of pin holes into which a plurality of lifter pins for the substrate are inserted; the second characteristic pattern reflects the at least one pattern selected from the group; The substrate processing system of claim 12 .

14. a load lock module having a reduced pressure chamber connected to the vacuum chamber; an atmospheric transfer module having an atmospheric chamber connected to the reduced pressure chamber; Further provided with the second measuring device is connected to the reduced pressure chamber or the atmospheric chamber; The substrate processing system according to any one of claims 1 to 7.

15. the control unit has a user interface configured to present at least one measure for adjusting the substrate so as to prevent misalignment to the substrate, to an operator, and to acquire a measure selected by the operator from the at least one measure. The substrate processing system according to any one of claims 1 to 7.

16. the substrate processing system is configured to process a plurality of substrates in succession; the control unit is configured to estimate, for at least one substrate of the plurality of substrates, in which period of the first period and / or the second period, or the intermediate period, a positional deviation of the substrate occurred. The substrate processing system according to any one of claims 1 to 7.

17. (a) transferring a substrate from outside a processing chamber to an area above a substrate support; (b) performing a process on the substrate on the substrate support; (c) transferring the substrate from the region above the substrate support to outside the processing chamber; (d) acquiring a first positional deviation amount of the substrate in the step (a) and / or a second positional deviation amount of the substrate in the step (c); (d) acquiring a third positional deviation amount of the substrate on the substrate support member in the step (b); (e) using the first deviation amount and / or the second deviation amount and the third deviation amount, to estimate in which of the step (a) and / or the step (c) and the step (b) the positional deviation of the substrate occurred. Substrate processing method.

18. A program executed by a computer of a substrate processing system to cause the substrate processing system to perform the substrate processing method according to claim 17.

19. A storage medium storing the program according to claim 18.

Images