Light emitting device and image forming apparatus

Abstract

To provide a technique advantageous for reducing the size of a light emitting device.SOLUTION: A light emitting device comprises a plurality of pixels that are arranged to form a plurality of rows and a plurality of columns on a rectangular substrate having long sides in a row direction and short sides in a column direction, and a scanning circuit. The plurality of pixels each include a luminous element and a driving circuit for driving the luminous element. The scanning circuit includes a plurality of data holding circuits provided in correspondence with the plurality of columns. Each data holding circuit includes a plurality of memory circuits that hold data for controlling the driving circuits arranged in the plurality of pixels in a corresponding column. The plurality of memory circuits in each data holding circuit include a first memory circuit and a second memory circuit arranged side by side in the row direction.SELECTED DRAWING: Figure 10

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device and an image-forming apparatus. [Background technology]

[0002] A print head (OLED-PH) for an image forming apparatus has been proposed, which uses an organic light-emitting diode (OLED) as a light source. Patent Document 1 shows a light-emitting device in which an OLED and a driving transistor for driving it are formed on a single substrate. Because the OLED and the driving transistor can be formed on the same substrate, miniaturization and cost reduction are possible. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-162410 Summary of the Invention [Problem to be solved by the invention]

[0004] In Patent Document 1, a data retention circuit is arranged to retain data for controlling the emission and non-emission of each OLED. It is considered that the data retention circuit requires multiple memory circuits for retaining data in one-to-one correspondence with each OLED. Patent Document 1 does not consider the arrangement of multiple memory circuits.

[0005] An object of the present invention is to provide a technique that is advantageous for miniaturizing light-emitting devices. [Means for solving the problem]

[0006] In view of the above problems, a light-emitting device according to an embodiment of the present invention is a light-emitting device comprising a plurality of pixels arranged to form a plurality of rows and a plurality of columns on a rectangular substrate whose long sides are in the row direction and whose short sides are in the column direction, and a scanning circuit, wherein each of the plurality of pixels includes a light-emitting element and a drive circuit for driving the light-emitting element, the scanning circuit includes a plurality of data retention circuits provided corresponding to the plurality of columns, each data retention circuit including a plurality of memory circuits each holding data for controlling the drive circuits arranged in the plurality of pixels in the corresponding column, and the plurality of memory circuits in each data retention circuit including a first memory circuit and a second memory circuit arranged side by side in the row direction. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a technique that is advantageous for miniaturizing light-emitting devices. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view showing a configuration example of a light-emitting device according to an embodiment of the present invention. [Figure 2] FIG. 2 is a block diagram showing an example of the configuration of the light-emitting device of FIG. 1. [Figure 3] FIG. 2 is a diagram showing an example of the configuration of a drive circuit for the light-emitting device of FIG. 1. [Figure 4] 2 is a diagram showing an example of connection between a drive circuit and a scanning circuit of the light-emitting device of FIG. 1. [Figure 5] 2 is a timing chart showing an example of the operation of the operating circuit of the light-emitting device of FIG. 1; [Figure 6] FIG. 2 is a diagram showing an example of the configuration of a memory circuit of the light-emitting device of FIG. 1. [Figure 7] FIG. 2 is a diagram showing an example of the layout of circuit blocks in the light-emitting device of FIG. 1. [Figure 8] 2 is a diagram showing an example of the arrangement of a drive circuit and a scanning circuit for the light-emitting device of FIG. 1; [Figure 9] 2 is a diagram showing an example of the arrangement of a drive circuit and a scanning circuit for the light-emitting device of FIG. 1; [Figure 10]2 is a diagram showing an example of the arrangement of a drive circuit and a scanning circuit for the light-emitting device of FIG. 1; [Figure 11] FIG. 11 is a diagram showing details of the arrangement example of FIG. 10 . [Figure 12] 2 is a diagram showing an example of connection between a drive circuit and a scanning circuit of the light-emitting device of FIG. 1. [Figure 13] 2 is a diagram showing an example of the arrangement of a drive circuit and a scanning circuit for the light-emitting device of FIG. 1; [Figure 14] FIG. 14 is a diagram showing details of the arrangement example of FIG. 13. [Figure 15] 1 is a cross-sectional view showing a configuration example of a light-emitting device according to an embodiment of the present invention. [Figure 16] FIG. 2 is a cross-sectional view showing an example of the configuration of a pixel of the light-emitting device of the present embodiment. [Figure 17] FIG. 1 is a diagram showing an example of an image forming apparatus using a light-emitting device according to an embodiment of the present invention. [Figure 18] FIG. 1 is a diagram showing an example of a display device using the light-emitting device of the present embodiment. [Figure 19] FIG. 1 is a diagram showing an example of a photoelectric conversion device using the light-emitting device of the present embodiment. [Figure 20] 1A and 1B are diagrams showing examples of electronic equipment using the light-emitting device of the present embodiment. [Figure 21] FIG. 1 is a diagram showing an example of a display device using the light-emitting device of the present embodiment. [Figure 22] FIG. 1 is a diagram showing an example of a lighting device using the light-emitting device of the present embodiment. [Figure 23] FIG. 1 is a diagram showing an example of a moving object using the light-emitting device of the present embodiment. [Figure 24] FIG. 1 is a diagram showing an example of a wearable device using the light-emitting device of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] Light-emitting devices according to embodiments of the present disclosure will be described with reference to Figures 1 to 14. In the following description, an example will be described in which an organic light-emitting diode (OLED) is used as a light-emitting element disposed in the light-emitting device. However, the present disclosure is not limited to light-emitting devices using OLEDs, and can be applied to all light-emitting devices equipped with current-driven light-emitting elements.

[0011] FIG. 1 is a cross-sectional view showing an example of the configuration of a light-emitting device 100 of this embodiment. FIG. 1 shows a cross section of a light-emitting element 150 and a transistor 114 connected to the light-emitting element 150. The light-emitting element 150 and the transistor 114 form a pixel, and the transistor 114 can form part of a drive circuit, which will be described later. The transistor 114 may be provided on a substrate 110 made of a semiconductor such as silicon. The transistor 114 includes a gate 113, a drain 112, and a source 111.

[0012] The drain 112 of the transistor 114 and the light-emitting element 150 are connected by a wiring pattern 117. The wiring pattern 117 may include contact plugs 115a to 115d and conductive patterns 116a to 116d. An insulating layer 119 is provided between the wiring patterns 117. It can also be said that the wiring pattern 117 is disposed within the insulating layer 119. Although FIG. 1 illustrates the insulating layer 119 as a single layer, the insulating layer 119 may have a laminated structure in which multiple layers are stacked.

[0013] The light-emitting element 150 includes a conductive pattern 116d, an organic compound layer 121 including a light-emitting layer, and an electrode 122. The conductive pattern 116d is an independent electrode for each light-emitting element 150 (pixel) and may also be referred to as a lower electrode. The electrode 122 may be shared by multiple light-emitting elements 150 (pixels) and is a transparent electrode. The transparency of the electrode 122 allows light from the organic compound layer 121 to be extracted to the outside. A protective layer 125 is provided on the electrode 122 to suppress deterioration of the light-emitting element 150 (organic compound layer 121). In the light-emitting device 100, combinations of light-emitting elements 150 and transistors 114 (drive circuits) may be repeatedly arranged in the row and column directions.

[0014] Between each light-emitting element 150, a structure 127 having a large step is formed in the layer immediately below the organic compound layer 121. The structure 127 electrically separates the organic compound layer 121 for each light-emitting element 150 (pixel), while electrically connecting the electrodes 122.

[0015] 1. The connection of the electrodes (source 111, drain 112) included in the transistor 114 may be reversed depending on the polarity of the conductive pattern 116d (light-emitting element 150) and the polarity of the transistor 114. It is sufficient that either the source 111 or the drain 112 of the transistor 114 is electrically connected to the light-emitting element 150.

[0016] Furthermore, the transistor 114 is not limited to being provided on the substrate 110 made of a semiconductor such as single crystal silicon. For example, the transistor 114 may be a thin film transistor (TFT) formed on an active layer using a semiconductor formed on the surface of an insulating substrate such as glass or plastic. Examples of materials for the active layer include single crystal silicon, non-single crystal silicon such as amorphous silicon and microcrystalline silicon, and non-single crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide.

[0017] 2 shows a circuit block diagram illustrating an example of the configuration of the light-emitting device 100 of this embodiment. The light-emitting device 100 includes an interface circuit 300, a register 301, a reference current generating circuit 310, a programmable current source 311, a bias current source 312, a current control circuit 313, a pixel driving unit 314, and a scanning circuit 317. The scanning circuit 317 includes a data holding unit 315 and a column selecting unit 316.

[0018] The interface circuit 300 receives mode information for accessing the power supply and registers from outside the light-emitting device 100, information related to image data, and the like, and outputs data signals to the register 301 and the scanning circuit 317. The programmable current source 311 uses the output current of the reference current generation circuit 310 as a reference and outputs a current corresponding to the digital value supplied from the register 301 to the bias current source 312. The drive current of the pixel drive unit 314 is controlled by the set value of the register 301. The bias current source 312 supplies an output current corresponding to the set value set in the register 301 to the current control circuit 313. The current control circuit 313 generates a bias voltage for the pixel drive unit 314.

[0019] The data retention unit 315 of the scanning circuit 317 is configured to include multiple data retention circuits. The data retention circuits retain data corresponding to each light-emitting element 150 and control the light-emitting element 150 to emit or not emit light. The column selection unit 316 of the scanning circuit 317 is configured to include multiple column selection circuits. The column selection unit 316 selects one of the multiple data retention circuits to which data is written based on a data signal from the interface circuit 300, and as a result, controls the timing of the light-emitting element 150 to emit or not emit light. The pixel driving unit 314 is configured to include multiple driving circuits. Each driving circuit is connected to the light-emitting element 150, and the driving current is determined by a bias voltage supplied from the current control circuit 313, and the light-emitting element 150 is controlled to emit or not emit light by a signal supplied from the data retention unit 315. Details of the pixel driving unit 314 and the scanning circuit 317 will be described later.

[0020] 3 is a diagram showing an example of the configuration of the bias current source 312, the current control circuit 313, the pixel driving section 314, and the light emitting element 150. A method for adjusting the light emitting current of the light emitting element 150 and light emission control will be described below.

[0021] As shown in FIG. 3, the pixel driving unit 314 is provided with a plurality of driving circuits 332. Furthermore, light-emitting elements O11 to Oik are provided as the light-emitting elements 150. Each of the plurality of driving circuits 332 is connected to a corresponding light-emitting element O to drive the light-emitting element O. Each pixel PIX is configured to include a corresponding driving circuit 332 and the light-emitting element O. The driving circuit 332 includes transistors M11 to MiK that control the current flowing through the light-emitting elements O11 to Oik, and transistors M111 to Mi1K that control whether the light-emitting elements O11 to Oik emit light. A data storage unit 315 that stores data corresponding to each light-emitting element 150 supplies a signal corresponding to the data to the control terminal of the transistors M111 to Mi1K. This controls whether the light-emitting elements O11 to Oik emit light. The transistors M11 to MiK are connected in series to the corresponding transistors M111 to Mi1K. Similarly, the transistors M111 to Mi1K are connected in series to the corresponding light-emitting elements O11 to Oik. The transistors M111 to Mi1K correspond to the transistor 114 shown in FIG.

[0022] The output current I of the programmable current source 311 out is connected to the drain terminal of the transistor M0 that constitutes the bias current source 312. The transistor M0 is diode-connected, and a current I out A potential Vbn determined by is commonly applied to the gate terminals of the transistors M0 to Mi that constitute the bias current source 312.

[0023] The pixels PIX arranged in the light-emitting device 100 are divided into a plurality of circuit blocks 320, each containing a predetermined number of pixels PIX. In the circuit block 320a, the drain terminal of the transistor M1a constituting the current control circuit 313 is connected in series to the drain terminal of the transistor M1 constituting the bias current source 312. The gate terminal of the transistor M1a is connected to the drain terminal of the transistor M1a via a buffer B1. The buffer B1 is, for example, a voltage buffer with a gain of 1, and serves to absorb fluctuations in the gate potential of the transistors M11 to M1k caused by the light emission control operation of the drive circuit 332. The transistor M1a is diode-connected via the buffer B1, and a potential Vbp1 determined by the current I1 is applied in common to the gate terminals of the transistors M11 to M1k constituting the drive circuit 332 for the pixel PIX.

[0024] The gate-source voltages of the transistors M11 to M1k are the same, allowing the same drive current to be supplied to the light-emitting elements O11 to O1k arranged in the circuit block 320a. In other words, the transistors M11 to M1k function as constant current sources. Also, although not shown in FIG. 3, a drive voltage is applied to the gate terminals of the transistors M111 to M11k from a data retention circuit arranged in the data retention unit 315. This controls whether or not current is supplied to the light-emitting elements O11 to O1k, and as a result, whether or not the light-emitting elements O11 to O1k emit light. In other words, the transistors M111 to M11k function as switches.

[0025] When the driving circuit 332 is affected by fluctuations in the power supply potential, the current driving the light-emitting element O changes, which may cause unevenness in the output image of an image forming apparatus including the light-emitting device 100, for example. In the bias current source 312, the transistor M0 and the transistors M1 to Mi are arranged closely to form a current mirror circuit. This configuration makes it less susceptible to fluctuations in the power supply lines PVDD and VSS. As a result, by adopting the circuit configuration of this embodiment, unevenness in the output image of an image forming apparatus including the light-emitting device 100 can be suppressed. Similarly, in the circuit block 320a, the transistor M1a and the transistors M11 to M1k are arranged closely to form a current mirror circuit. This configuration makes it less susceptible to fluctuations in the power supply lines PVDD and VSS. As a result, unevenness in the output image of an image forming apparatus including the light-emitting device 100 can be suppressed.

[0026] Circuit blocks 320b to 320i have the same configuration as circuit block 320a. That is, light emitting elements O21 to O2k are driven to emit light by a drive circuit 332 including transistors M21 to M2k and transistors M211 to M21k. Furthermore, light emitting elements Oi1 to Oik are driven to emit light by a drive circuit including transistors Mi1 to Mik and transistors Mi11 to Mi1k.

[0027] Fig. 4 shows an example configuration of pixel driving units 314 corresponding to light-emitting elements O arranged in N rows and 3 columns, and column selection units 316 and data retention units 315 that constitute scanning circuit 317. As will be described later with reference to Fig. 7, a plurality of pixels PIX are arranged in a plurality of rows and a plurality of columns on a rectangular substrate 110 whose long sides are in the row direction and whose short sides are in the column direction. The circuit shown in Fig. 4 is a circuit that corresponds to the pixels PIX arranged in N rows and 3 columns among the plurality of pixels PIX.

[0028] Each of the column driving circuits 350a to 350c is configured by N driving circuits 332 corresponding to the N light-emitting elements O arranged in the pixels PIX of each column. Each of the column driving circuits 350a to 350c is responsible for driving the N light-emitting elements O arranged in each column.

[0029] The data retention unit 315 of the scanning circuit 317 includes a plurality of data retention circuits 360a-360c provided corresponding to the plurality of columns in which the pixels PIX are arranged. As will be described later, each of the data retention circuits 360a-360c includes a plurality of memory circuits 400 that retain data for controlling the drive circuits 332 arranged in the plurality of pixels PIX in the corresponding column. The data retention circuits 360a-360c are electrically connected to the corresponding column drive circuits 350a-350c, and control the drive circuits 332 arranged in the column drive circuits 350a-350b.

[0030] The column selection unit 316 of the scanning circuit 317 includes a plurality of column selection circuits 370a to 370c. The column selection circuits 370a to 370c select a data retention circuit 360 to which data for controlling the column drive circuit 350 is written. The column selection circuit 370 includes a flip-flop circuit and a logic element.

[0031] The interface circuit 300 transmits to the scanning circuit 317 a start pulse P_ST, a latch pulse PLATCH, and a data signal DATA, which is data for controlling whether the light-emitting element O emits light or not. <n:0>5 illustrates the operation of the scanning circuit 317 including the data holding unit 315 and the column selection unit 316. The supply of the clock signal CLK begins at time t0. The interface circuit 300 supplies a start pulse P_ST, which becomes active at time t1, to the column selection unit 316. The column selection circuits 370a to 370c arranged in the column selection unit 316 generate mutually non-overlapping column selection signals SEL0 to SEL2 by sequentially transferring pulse signals to the subsequent stage in synchronization with the clock signal CLK.

[0032] During the period from time t2 to time t4, the column selection signal SEL0 is at an active level, and at time t3, the latch pulse PLATCH is at an active level. <n:0>The value D1 is taken in and held in the data holding circuit 360a of the data holding unit 315. Each of the driving circuits 332 arranged in the column driving circuit 350a controls the light emission of the corresponding light-emitting element O in accordance with the data D1 held in the data holding circuit 360a.

[0033] During the period from time t4 to time t6, the column selection signal SEL1 is at an active level, and at time t5, the latch pulse PLATCH is at an active level. <n:0>The value D2 is taken in and held in the data holding circuit 360b of the data holding unit 315. Each of the driving circuits 332 arranged in the column driving circuit 350b controls the light emission of the corresponding light-emitting element O in accordance with the data D2 held in the data holding circuit 360b.

[0034] During the period from time t6 to time t8, the column selection signal SEL2 is at an active level, and at time t7, the latch pulse PLATCH is at an active level. <n:0>The value D3 is taken in and held in the data holding circuit 360c of the data holding unit 315. Each of the drive circuits 332 arranged in the column drive circuit 350b controls the light emission of the corresponding light-emitting element O in accordance with the data D3 held in the data holding circuit 360c. At subsequent times, the above-described operation can be repeated in the same manner.

[0035] Each of the data retention circuits 360a to 360c is provided with a plurality of memory circuits 400. The latch circuit in FIG. 6 is an example of the memory circuit 400. The latch circuit shown in FIG. 6 is a latch circuit with a reset function that uses five NMOS transistors and five PMOS transistors. Since one latch circuit functions as one memory circuit 400, N latch circuits (memory circuits 400) are required to retain data for controlling N light-emitting elements O.

[0036] Fig. 7 is a diagram showing an example of the arrangement of the circuit blocks in Fig. 2. The elements constituting light-emitting device 100 are arranged on rectangular substrate 110, whose long sides are in the row direction and whose short sides are in the column direction. In addition to the components shown in Fig. 2, Fig. 7 also shows pads 340 to 343 for connecting to the outside, which are connected to interface circuit 300.

[0037] The pixel driving unit 314 has M driving circuits 332 arranged at a predetermined resolution pitch in the row direction, which is the longitudinal direction. Furthermore, with M driving circuits 332 constituting one row, N driving circuits 332 (for N rows) are arranged at a predetermined resolution pitch in the column direction, which is the shorter side direction. A light-emitting element O is arranged on the upper layer of each driving circuit 332.

[0038] The column selection unit 316 and data storage unit 315 that constitute the scanning circuit 317 are arranged along the row direction of the light-emitting device 100. Therefore, the scanning circuit 317 occupies a large area within the light-emitting device 100. Reducing the area occupied by the column selection unit 316 and the data storage unit 315 reduces the area of ​​the light-emitting device 100. In a rectangular light-emitting device 100, the size in the row direction can be determined by the resolution pitch and number of pixels PIX arranged. On the other hand, reducing the size in the column direction, which is the short side direction, by reducing the area of ​​the scanning circuit 317 and the like greatly contributes to improving the yield of light-emitting devices 100 obtained from one substrate. Therefore, downsizing in the column direction can result in a significant cost reduction effect.

[0039] Fig. 8 shows an example of the arrangement of the column drive circuit 350, data retention circuit 360, and column selection circuit 370 corresponding to the pixels PIX arranged in one column. The configuration shown in Fig. 8 is an example of an arrangement when two rows of pixels PIX are arranged in one column. In each column in which the pixels PIX are arranged, a data retention circuit 360 corresponding to that column is arranged between the drive circuit 332 (column drive circuit 350) and the column selection circuit 370.

[0040] Two drive circuits 332 are arranged in the column drive circuit 350. Corresponding light-emitting elements O are arranged at positions overlapping the drive circuits 332, thereby forming two rows of pixels PIX. Since the drive circuits 332 are arranged corresponding to the light-emitting elements O of the pixels PIX that form one column, they can be arranged along the column direction as shown in FIG.

[0041] The data retention circuit 360 includes two memory circuits 400a and 400b for storing data for controlling the two drive circuits 332. In this case, the memory circuits 400a and 400b are arranged side by side in the row direction, as shown in FIG. 8 . In the case of a light-emitting device 100 used in an image forming apparatus or the like, the size of the light-emitting element O is determined based on the resolution of the light-emitting device 100, for example, 600 dpi to 4800 dpi (42 μm to 5.3 μm). The row-direction spacing of the drive circuits 332 (column drive circuits 350) is generally approximately the same as the spacing between the light-emitting elements O. On the other hand, in the case of a light-emitting device 100 using a semiconductor substrate such as silicon, elements such as transistors can be arranged in a layout that is finer than the spacing between the drive circuits 332 (column drive circuits 350). Therefore, the row-direction length of the memory circuit 400 can be made shorter than the length determined by the row-direction spacing of the drive circuits 332 (column drive circuits 350). In other words, the length in the row direction of the drive circuit 332 (column drive circuit 350) is longer than the length in the row direction of the memory circuits 400 arranged corresponding to each drive circuit 332 (column drive circuit 350) among the multiple memory circuits 400. Therefore, by arranging multiple memory circuits 400a, 400b in the row direction for one column drive circuit 350, the length in the column direction of the data retention circuit 360 can be reduced more than if multiple memory circuits 400a, 400b were arranged in the column direction.

[0042] By arranging the memory circuits 400a and 400b in the row direction in this manner, it is possible to reduce the size of the light-emitting device 100. This makes it possible to obtain more light-emitting devices 100 from one substrate. As a result, the manufacturing cost of the light-emitting device 100 can be reduced.

[0043] 9 shows an example of the arrangement of the column drive circuit 350, data retention circuit 360, and column selection circuit 370 when three rows of pixels PIX are arranged in one column. The column drive circuit 350 is provided with three drive circuits 332, the number of which corresponds to the number of pixels PIX arranged in one column. The drive circuits 332 can be arranged in the column direction, similar to the configuration shown in FIG. 8. The data retention circuit 360 is provided with three memory circuits 400a to 400c to retain data for controlling the three drive circuits 332.

[0044] It is necessary to align the drive timings of the corresponding light-emitting elements O in the drive circuits 332 arranged in one column. This is because if the light-emitting elements O emit light at different times, the light-emitting duration of each pixel PIX will change, which may affect the quality of the image formed by the image forming apparatus including the light-emitting device 100. For this reason, the data retention circuits 360 that supply signals to control the drive circuits 332 may be arranged in the row direction at intervals approximately the same as those of the column drive circuits 350.

[0045] In the configuration shown in FIG. 9, memory circuits 400b and 400c are arranged side by side in the column direction. Memory circuits 400a and 400b are arranged side by side in the row direction, and similarly, memory circuits 400a and 400c are arranged side by side in the row direction. In this case, in a plan view, the outer edge shape of memory circuit 400a is different from the outer edge shapes of memory circuits 400b and 400c. Furthermore, the outer edge shape of memory circuit 400b may be the same as the outer edge shape of memory circuit 400c. In other words, the multiple memory circuits 400a to 400c in each data retention circuit 360 may include a first type memory circuit including memory circuit 400a and a second type memory circuit including memory circuits 400b and 400c.

[0046] For example, the length in the column direction in which the first-type memory circuit 400a is arranged is different from the length in the column direction in which the second-type memory circuits 400b and 400c are arranged. More specifically, the length in the column direction in which the first-type memory circuit 400a is arranged is longer than the length in the column direction in which the second-type memory circuits 400b and 400c are arranged. Furthermore, the aspect ratio obtained by dividing the length in the column direction in which the first-type memory circuit 400a is arranged by the length in the row direction is different from the aspect ratio obtained by dividing the length in the column direction in which the second-type memory circuits 400b and 400c are arranged by the length in the row direction. More specifically, the aspect ratio obtained by dividing the length in the column direction in which the first-type memory circuit 400a is arranged by the length in the row direction is greater than the aspect ratio obtained by dividing the length in the column direction in which the second-type memory circuits 400b and 400c are arranged by the length in the row direction. 9, the length in the row direction in which the first type memory circuit 400a is arranged may be shorter than the length in the row direction in which the second type memory circuits 400b and 400c are arranged. On the other hand, the memory circuits 400b and 400c may have the same length in the column direction in which they are arranged, the same length in the row direction in which they are arranged, or the same aspect ratio, which is the length in the column direction divided by the length in the row direction in which they are arranged.

[0047] 9, the data retention circuit 360 can be configured with the memory circuits 400a to 400c arranged to fit the available space, rather than being configured with only memory circuits 400 having the same outer edge shape. This allows for an improved arrangement density of the memory circuits 400a to 400c in the data retention circuit 360. By improving the arrangement density of the memory circuits 400a to 400c, the length of the light-emitting device 100 in the column direction can be reduced, thereby enabling the size of the light-emitting device 100 to be reduced. As a result, it becomes possible to obtain more light-emitting devices 100 from one substrate, which has the effect of reducing the manufacturing cost of the light-emitting device 100.

[0048] 10 shows an example of the arrangement of the column drive circuit 350, data retention circuit 360, and column selection circuit 370 when four rows of pixels PIX are arranged in one column. The column drive circuit 350 is provided with four drive circuits 332, the number corresponding to the number of pixels PIX arranged in one column. Furthermore, the data retention circuit 360 is provided with four memory circuits 400a to 400d to retain data for controlling the four drive circuits 332.

[0049] In the configuration shown in FIG. 10, memory circuits 400b, 400c, and 400d are arranged side by side in the column direction. Memory circuits 400a and 400b are arranged side by side in the row direction, memory circuits 400a and 400c are arranged side by side in the row direction, and memory circuits 400a and 400d are arranged side by side in the row direction. Memory circuit 400a may be the first type memory circuit described above, and memory circuits 400b to 400d may be the second type memory circuits described above. In other words, memory circuit 400a and memory circuits 400b to 400d may have different outer edge shapes, while memory circuits 400b to 400d may have the same outer edge shape.

[0050] Similar to the configuration shown in FIG. 9, memory circuits 400a-400d having different outer edge shapes are used. This improves the layout density and allows the data retention circuit 360 to be arranged in a smaller area than when the data retention circuit 360 is configured only with memory circuits 400 having the same outer edge shape. As described above, in each of the multiple columns in which pixels PIX are arranged, the drive circuits 332 arranged in the multiple pixels PIX in the corresponding column are arranged so as to be aligned in the column direction. In this case, as shown in FIGS. 9 and 10, the length in the column direction along which the multiple drive circuits 332 are aligned may be longer than the length in the column direction along which the multiple memory circuits 400 are arranged. In other words, the length in the column direction occupied by the memory circuit 400 may be shorter than the length in the column direction occupied by the drive circuit 332.

[0051] FIG. 11 is a diagram illustrating an example of the layout of four memory circuits 400a-400d included in the data retention circuit 360 shown in FIG. 10. The latch circuits shown in FIG. 6 are arranged as the memory circuits 400a-400d, and each of the memory circuits 400a-400d is configured using five NMOS transistors and five PMOS transistors. In this embodiment, the NMOS transistors include regions where an N-type semiconductor region and a gate electrode overlap, and the PMOS transistors include regions where a P-type semiconductor region and a gate electrode overlap. The configuration shown in FIG. 11 illustrates an example in which the gate electrodes of each transistor are arranged along the column direction. It can also be said that the multiple transistors constituting each of the multiple memory circuits 400a-400d in each data retention circuit 360 are arranged so that current flows in the row direction in their channel regions. In this case, as shown in FIG. 11, all of the transistors constituting each of the multiple memory circuits 400a-400d may be arranged so that current flows in the row direction in their channel regions. This can reduce the length of each of the memory circuits 400a to 400d in the row direction.

[0052] In the configuration shown in FIG. 11, all transistors in memory circuits 400b-400d are used as elements constituting the memory circuit. On the other hand, memory circuit 400a has one NMOS transistor and one PMOS transistor arranged as redundant elements 500. As can be seen from the different outer edge shapes described above, the circuit layout of the first-type memory circuit 400a and the circuit layout of the second-type memory circuits 400b-400d may be different from each other. In this embodiment, the circuit layout refers to the positional relationship of the elements arranged in the circuit.

[0053] In this embodiment, the outer edge shape of the memory circuit 400 may be a shape formed by connecting the outermost regions of the N-type semiconductor region and the P-type semiconductor region that constitute the memory circuit 400. For example, the length of the outer edge shape in the row direction of the first type memory circuit 400a is L1h, and the length of the outer edge shape in the column direction is L1v. Furthermore, for example, the length of the outer edge shape in the row direction of the second type memory circuit 400d is L3h, and the length of the outer edge shape in the column direction is L3vd.

[0054] As described above, the row length L1h of the transistors constituting the first-type memory circuit 400a is shorter than the row length L3h of the transistors constituting the second-type memory circuits 400b-400d. Furthermore, the column length L1v of the transistors constituting the first-type memory circuit 400a is longer than each of the column lengths L3va-L3vb of the transistors constituting the second-type memory circuits 400b-400d. The row length of the memory circuits 400b-400d may all be length L3h, as shown in FIG. 11. Furthermore, the column lengths L3va-L3vb of the memory circuits 400b-400d may all be the same. However, this is not a limitation, and the row and column lengths of the memory circuits 400b-400d may differ for each of the memory circuits 400b-400d.

[0055] Here, the spacing between the second-type memory circuits 400b to 400d arranged in the column direction is defined. The spacing between the memory circuits 400d and 400c in the column direction is defined as length L2vd, and the spacing between the memory circuits 400c and 400b in the column direction is defined as length L2vc. In this case, the spacing between the second-type memory circuits 400b to 400d arranged in the column direction is defined as length L2v, which is the average of length L2vd and length L2vc. Length L2vd and length L2vc may be the same length.

[0056] In the data retention circuit 360, a first-type memory circuit 400a and a predetermined number (two in the configuration of FIG. 9, three in the configurations of FIGS. 10 and 11. Here, the configuration of FIG. 11 will be described as three) of second-type memory circuits 400b to 400d are arranged side by side in the row direction, and the three second-type memory circuits 400b to 400d are arranged side by side in the column direction. L2vd,L2vc <L1v<3×L2vd,3×L2vc may satisfy the following relationship.

[0057] In this embodiment, the aspect ratio obtained by dividing the column length L1v of the first-type memory circuits 400a by the row length L1h is greater than the aspect ratio obtained by dividing the column length L3v of the second-type memory circuits 400b to 400d by the row lengths L3hb to L3hd. The low-aspect ratio memory circuits 400b to 400d are arranged in a row, and the memory circuits 400b to 400d and the high-aspect ratio memory circuits 400a are arranged in a row. Among the data retention circuits 360 arranged corresponding to each pixel column, the number of high-aspect ratio first-type memory circuits 400a is fewer than the number of second-type memory circuits 400b to 400d. By increasing the number of low-aspect ratio memory circuits 400b to 400d arranged in a column, the column length of the data retention circuit 360 can be reduced.

[0058] The N memory circuits 400 for driving the pixels PIX arranged in N rows and one column include S high-aspect-ratio first-type memory circuits 400a and (NS) low-aspect-ratio second-type memory circuits 400b-400d. In this case, S<(NS) may be satisfied. Furthermore, the length L1v of the column direction in which the high-aspect-ratio first-type memory circuits 400a are arranged is greater than the interval L2v between the low-aspect-ratio second-type memory circuits 400b-400d arranged in the column direction, and is shorter than the sum of the intervals L2v multiplied by (NS). This column direction relationship defines a constraint on the length L1v of the column direction in which the high-aspect-ratio first-type memory circuits 400a are arranged. Furthermore, this relationship defines a relationship in which the column direction height can be reduced by combining memory circuits 400 with different aspect ratios, rather than arranging N low-aspect-ratio second-type memory circuits 400.

[0059] In this way, the configuration of this embodiment can improve the arrangement density of the memory circuits 400 in the data retention circuit 360. This allows the length of the light-emitting device 100 in the column direction to be reduced, making it possible to miniaturize the size of the light-emitting device 100. As a result, it becomes possible to obtain more light-emitting devices 100 from one substrate, which has the effect of reducing the manufacturing cost of the light-emitting device 100.

[0060] Fig. 12 shows a modified example of the configuration shown in Fig. 4. More specifically, Fig. 12 shows an example configuration of pixel driving units 314 corresponding to light-emitting elements O arranged in N rows and 6 columns, and column selection units 316 and data retention units 315 that constitute a scanning circuit 317. The configuration shown in Fig. 12 differs from the configuration shown in Fig. 4 in the configuration of the column selection unit 316 of the scanning circuit 317. Since the configuration other than the column selection unit 316 may be the same as in the above-described embodiment, the following description will focus on the differences, and description of the aspects that may be the same will be omitted as appropriate.

[0061] In the configuration shown in Fig. 4, the column selection circuits 370a-370c arranged in the column selection unit 316 of the scanning circuit 317 are arranged to correspond to the respective columns of pixels PIX. On the other hand, in the configuration shown in Fig. 12, the column selection circuits 370a-370c are arranged to simultaneously select at least two data retention circuits 360 out of the multiple data retention circuits 360. For example, the column selection circuit 370a is arranged to simultaneously select two data retention circuits 360a and 360b provided to correspond to adjacent columns out of the multiple columns. The same applies to the column selection circuits 370b and 370c.

[0062] FIG. 13 shows an example of the arrangement of the column driving circuits 350a, 350b, the data retention circuits 360a, 360b, and the column selection circuit 370a shown in FIG. 12. As in FIG. 10, this is an example of an arrangement in which four rows of pixels PIX are arranged in one column. In the configuration shown in FIG. 13, one column selection circuit 370a can be arranged in the row width of two columns of column driving circuits 350a, 350b. This allows the column direction of the column selection circuit 370a to be reduced. In other words, the column direction length of the light-emitting device 100 can be reduced, allowing the size of the light-emitting device 100 to be reduced. As a result, more light-emitting devices 100 can be obtained from one substrate, which has the effect of reducing the manufacturing cost of the light-emitting device 100.

[0063] FIG. 14 is a diagram illustrating an example of the layout of the four memory circuits 400aa-400da included in the data retention circuit 360a and the four memory circuits 400ab-400db included in the data retention circuit 360b shown in FIG. 13. Similar to the configuration shown in FIG. 11, the latch circuits shown in FIG. 6 are arranged as the memory circuits 400aa-400db, and each of the memory circuits 400aa-400db is configured using five NMOS transistors and five PMOS transistors. In this embodiment, an NMOS transistor is configured including an overlapping region between an N-type semiconductor region and a gate electrode, and a PMOS transistor is configured including an overlapping region between a P-type semiconductor region and a gate electrode. The configuration shown in FIG. 14 illustrates an example in which the gate electrodes of each transistor are arranged in the column direction. It can also be said that each transistor constituting each of the multiple memory circuits 400aa-400db in each data retention circuit 360 is arranged so that a current flows in the row direction in its channel region. As shown in FIG. 14, all of the transistors constituting each of the plurality of memory circuits 400aa to 400db may be arranged so that a current flows in the row direction in the channel region.

[0064] 14, in memory circuits 400ba-400da and 400bb-400db, all transistors are used as elements constituting the memory circuits, while in memory circuits 400aa and 400ab, one NMOS transistor and one PMOS transistor are arranged as redundant elements 500.

[0065] 14, in a plan view, the elements (transistors) arranged in the memory circuits 400aa-400da in the data retention circuit 360a and the elements (transistors) arranged in the memory circuits 400ab-400db in the data retention circuit 360b may be arranged in line-symmetrical positions with respect to the imaginary line A-A' that passes through the boundary between the data retention circuits 360a and 360b. This line-symmetrical arrangement allows memory circuits 400ba and 400bb, memory circuits 400da and 400db, and memory circuits 400ca and 400cb to share control lines. This reduces the number of control lines and the size of the data retention unit 315.

[0066] In this way, the configurations of the above-described embodiments enable miniaturization of the light-emitting device 100. This increases the number of light-emitting devices 100 that can be obtained from one substrate, making it possible to manufacture the light-emitting devices 100 at low cost.

[0067] 15 to 24(a) and 24(b), application examples in which the light-emitting device 100 of this embodiment is applied to an image forming apparatus, a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a wearable device will be described. The description will be made assuming that the above-mentioned light-emitting element O, such as an organic EL element (OLED) using an organic light-emitting material, is arranged in a pixel arranged in the light-emitting device 100. First, details of each component arranged in the pixel PIX of the above-mentioned light-emitting device 100 will be shown, and then application examples will be described.

[0068] The organic light-emitting device according to this embodiment includes a first electrode, a second electrode, and an organic compound layer disposed between these electrodes. One of the first electrode and the second electrode is an anode, and the other is a cathode. In the organic light-emitting device according to this embodiment, the organic compound layer may be a single layer or a laminate consisting of multiple layers, as long as it includes an emitting layer. When the organic compound layer is a laminate consisting of multiple layers, the organic compound layer may include a hole injection layer, a hole transport layer, an electron blocking layer, a hole / exciton blocking layer, an electron transport layer, an electron injection layer, and the like, in addition to the emitting layer. The emitting layer may also be a single layer or a laminate consisting of multiple layers. When the emitting layer is a multilayer, a charge generation layer may be disposed between the emitting layers. The charge generation layer may be composed of a compound having a lower LUMO than the hole transport layer, and the LUMO of the charge generation layer may be lower than the HOMO of the hole transport layer. Here, the molecular orbital energy of the organic compound layer may be the molecular orbital energy of the organic compound having the largest weight ratio in the organic compound layer.

[0069] In the organic light-emitting device of this embodiment, when an organic compound is contained in the light-emitting layer, the light-emitting layer may be a layer consisting of only the organic compound, or may be a layer consisting of an organometallic complex and other compounds. Here, when the light-emitting layer is a layer consisting of an organometallic complex and other compounds, the organic compound may be used as a host or a guest of the light-emitting layer. It may also be used as an assist material contained in the light-emitting layer. Here, the host is the compound with the largest mass ratio among the compounds constituting the light-emitting layer. The guest is a compound with a mass ratio smaller than that of the host among the compounds constituting the light-emitting layer, and is responsible for the main emission of light. The assist material is a compound with a mass ratio smaller than that of the host among the compounds constituting the light-emitting layer, and assists the emission of the guest. The assist material may also be called a second host. The host material may also be called a first compound, and the assist material may also be called a second compound.

[0070] Here, the organic compound may be used together with conventionally known low-molecular-weight and high-molecular-weight hole-injecting or hole-transporting compounds, host compounds, light-emitting compounds, electron-injecting or electron-transporting compounds, etc., as needed.

[0071] As the hole injection / transport material, a material with high hole mobility is suitable so that holes can be easily injected from the anode and the injected holes can be transported to the light-emitting layer. In addition, a material with a high glass transition temperature is suitable to reduce deterioration of film quality such as crystallization in organic light-emitting devices. The electron transporting material can be arbitrarily selected from those capable of transporting electrons injected from the cathode to the light-emitting layer, and is selected in consideration of the balance with the hole mobility of the hole transporting material, etc. The electron transporting material can also be used in the hole blocking layer.

[0072] The electron injection material can be arbitrarily selected from those that allow easy injection of electrons from the cathode, and is selected in consideration of the balance with hole injection properties, etc. The electron injection material can also be used in combination with an electron transport material.

[0073] Structure of organic light-emitting element The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer may be made of an acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0074] substrate Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. Furthermore, the substrate may be provided with switching elements such as transistors and wiring patterns, with an insulating layer thereon. When a silicon wafer is used as the substrate, the active layer, source region, and drain region of the transistor are formed within the substrate. Furthermore, it is suitable because it allows transistors to be densely arranged. Any material can be used for the insulating layer, as long as it allows contact holes to be formed so that wiring patterns can be formed between the first electrode and the substrate, and insulation from unconnected wiring patterns is ensured. For example, the insulating layer may be made of a resin such as polyimide, silicon oxide, silicon nitride, or the like.

[0075] electrode A pair of electrodes can be used as the electrodes. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0076] The anode may be made of a material with a high work function. For example, simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used as the anode.

[0077] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0078] When the electrode is used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys thereof, or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. Furthermore, when a transparent electrode is used as the electrode, a transparent conductive oxide layer such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.

[0079] On the other hand, a material with a low work function may be selected as the cathode material. Examples include simple metals such as alkali metals (e.g., lithium), alkaline earth metals (e.g., calcium), aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these simple metals may be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver may be used. Metal oxides such as indium tin oxide (ITO) may also be used. These electrode materials may be used alone or in combination. The cathode may have a single-layer or multi-layer structure. Silver may be used as the cathode, and a silver alloy may be used to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the silver:other metal ratio may be 1:1 or 3:1.

[0080] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using a DC or AC sputtering method, for example, can provide good coverage of the formed film and reduce the resistance of the cathode.

[0081] Pixel isolation layer The pixel separation layer may be formed of silicon oxides such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) formed using a chemical vapor deposition (CVD) method. To increase the in-plane resistance of the organic compound layer, the thickness of the organic compound layer, particularly the hole transport layer, may be thinned on the sidewalls of the pixel separation layer. Specifically, the thickness of the organic compound layer on the sidewalls can be thinned by increasing the taper angle of the sidewalls of the pixel separation layer or the thickness of the pixel separation layer, thereby increasing vignetting during deposition.

[0082] On the other hand, the sidewall taper angle and film thickness of the pixel separation layer can be adjusted to the extent that voids are not formed in the protective layer formed thereon. By preventing voids from being formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration of reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0083] According to this embodiment, charge leakage to adjacent pixels can be effectively suppressed even if the taper angle of the sidewall of the pixel separation layer is not steep. As a result of this study, it was found that charge leakage can be sufficiently reduced if the taper angle is between 60 degrees and 90 degrees. The thickness of the pixel separation layer may be between 10 nm and 150 nm. Similar effects can also be achieved even if the pixel separation layer is composed only of pixel electrodes without a pixel separation layer. However, in this case, short circuits in organic light-emitting elements can be reduced by making the thickness of the pixel electrode less than half that of the organic layer or by making the edge of the pixel electrode forward tapered at less than 60 degrees.

[0084] Furthermore, even when the first electrode is a cathode and the second electrode is an anode, a wide color gamut and low-voltage operation are possible by forming an electron transport material and a charge transport layer, and an emitting layer on the charge transport layer.

[0085] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are present, they may be called hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc., depending on their functions. The organic compound layer is mainly composed of organic compounds but may also contain inorganic atoms or inorganic compounds. The organic compound layer may contain, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0086] When multiple light-emitting layers are present, a charge-generating portion may be present between the first and second light-emitting layers. The charge-generating portion may have an organic compound with a lowest unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when a charge-generating portion is present between the second and third light-emitting layers.

[0087] protective layer A protective layer may be provided on the cathode. For example, by adhering glass with a moisture absorbent on the cathode, the penetration of moisture and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation layer such as silicon nitride may be provided on the cathode to reduce the penetration of moisture and other contaminants into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride may be formed by CVD to serve as a protective layer. After forming the protective layer by CVD, a protective layer may be formed by atomic layer deposition (ALD). The material of the protective layer formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by CVD on the protective layer formed by ALD. The protective layer formed by ALD may have a thickness smaller than that of the protective layer formed by CVD. Specifically, the thickness of the protective layer formed by ALD may be 50% or less, or even 10% or less, of the protective layer formed by CVD.

[0088] Color filters A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate, and the substrate on which the color filter is formed may be bonded to the substrate on which the organic light-emitting element is provided. Alternatively, for example, a color filter may be patterned on the above-mentioned protective layer using photolithography technology. The color filter may be made of a polymer.

[0089] planarization layer A planarization layer may be disposed between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the layers below the planarization layer. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight. In consideration of reducing the unevenness, a high molecular weight organic compound may be used for the planarization layer.

[0090] The planarization layers may be provided above and below the color filter. In this case, the constituent materials of the planarization layers may be the same or different. Specific examples of the material for the planarization layer include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0091] Microlenses The organic light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0092] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0093] The microlens has a first surface having a convex portion and a second surface opposite the first surface. The second surface can be disposed closer to the functional layer (light-emitting layer) than the first surface. To achieve this configuration, it is necessary to form the microlens on the light-emitting device. If the functional layer is an organic layer, high-temperature processes can be avoided in the microlens manufacturing process. Furthermore, if the second surface is disposed closer to the functional layer than the first surface, the glass transition temperatures of the organic compounds constituting the organic layer may all be 100°C or higher, and are preferably, for example, 130°C or higher.

[0094] Counter substrate An opposing substrate may be disposed on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the aforementioned substrate. The opposing substrate may be made of the same material as the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the opposing substrate may be a second substrate.

[0095] organic layer The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to an embodiment of the present disclosure may be formed by the following method.

[0096] The organic compound layer constituting the organic light-emitting device according to the embodiment of the present disclosure can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0097] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining it with an appropriate binder resin.

[0098] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0099] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, as needed.

[0100] Pixel circuit The light-emitting device may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light-emitting element and the second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0101] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0102] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristics.

[0103] The transistors that make up the pixel circuit are transistors connected to the light-emitting elements, such as the first light-emitting element.

[0104] pixel An organic light emitting device includes a plurality of pixels, each of which includes sub-pixels that emit different colors, for example, RGB colors.

[0105] A pixel has an area called a pixel aperture that emits light. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0106] The spacing between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0107] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0108] Uses of the organic light-emitting device according to embodiments of the present disclosure The organic light-emitting device according to the embodiment of the present disclosure can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, or a light-emitting device having a white light source and a color filter.

[0109] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, linear CCD, memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0110] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0111] Next, further explanation will be given with reference to the drawings. Fig. 15 is a cross-sectional view showing an example of the configuration of a pixel of the light-emitting device of this embodiment. The light-emitting device includes a substrate 411, an insulating layer 410, and a light-emitting element 420. The insulating layer 410 is located on the substrate 411. The light-emitting element 420 is located on the insulating layer 410. In other words, the insulating layer 410 is located between the substrate 411 and the light-emitting element 420.

[0112] The substrate 411 has a main surface (the upper surface in FIG. 15) on which the drive transistor 401, the write control transistor 403, and the light-emitting control transistor 402 are formed. The substrate 411 may be formed of, for example, a P-type semiconductor. An N-type well region 413 is formed on the main surface side of the substrate 411 (i.e., the upper side of the substrate 411). The substrate 411 other than the well region 413 becomes a P-type semiconductor region 412.

[0113] The substrate 411 has a plurality of impurity regions that function as source regions or drain regions of the transistors in the well region 413. The conductivity type of the impurity regions can be, for example, P type.

[0114] A conductive layer 465, a conductive layer 463G, and a conductive layer 464G are arranged on the main surface (upper surface) of the substrate 411. The conductive layer 463G functions as the gate of the light-emitting control transistor 463. One of the P-type impurity regions functions as the source 463S of the light-emitting control transistor 463, and another of the P-type impurity regions functions as the drain 463D. The conductive layer 465 functions as the gate of the driving transistor 461. The impurity region that functions as the drain 463D of the light-emitting control transistor 463 also functions as the source 468 of the driving transistor 401. In addition, another one of the P-type impurity regions functions as the drain 467 of the driving transistor 401.

[0115] Furthermore, the conductive layer 464G functions as the gate of the reset transistor 464. Moreover, the impurity region that functions as the source 468 of the drive transistor 401 also functions as the drain 464D of the reset transistor 464. Moreover, another one of the P-type impurity regions functions as the source 464S of the reset transistor 464.

[0116] The substrate 411 further has an isolation portion 430 formed between adjacent pixels. As the isolation portion 430, shallow trench isolation (STI), local oxidation of silicon (LOCOS) isolation, N-type diffusion layer isolation, or the like may be used.

[0117] The light-emitting element 420 has a cathode 416, an organic light-emitting layer 415, and an anode 414. The cathode 416 is electrically connected to the power line 408. The anode 414 is electrically connected to the main terminal (here, the drain) of the driving transistor 401. The organic light-emitting layer 415 is located between the cathode 416 and the anode 414. A bank portion 417 is arranged at the end of the anode 414. The bank portion 417 prevents the current flowing between the anode 414 and the cathode 416 from leaking to adjacent pixels 101.

[0118] Conductive patterns, electrodes of capacitor elements, plugs, and the like are embedded in the insulating layer 410. The insulating layer 410 may be made of, for example, silicon oxide. Each of the conductive patterns may be a wiring layer. For example, as shown in FIG. 15, the conductive pattern may include a wiring pattern WR1, a wiring pattern WR2, and a wiring pattern WR3.

[0119] The capacitor 405 has electrodes 405a and 405b, and the capacitor 406 has electrodes 406a and 406b. In the insulating layer 410, the electrodes 405a and 406a may be disposed on the same insulating layer. Also, the electrodes 405b and 406b may be disposed on the same insulating layer. The electrodes 405a and 405b face each other with the insulating layer in between. Also, the electrodes 406a and 406b face each other with the insulating layer in between. This forms a capacitor with a metal-insulator-metal (MIM) structure.

[0120] The multiple plugs may include, for example, plug PL1, plug PL2, plug PL3, plug PL4, and plug PL5. The multiple plugs may all have the same thickness or may have different thicknesses, or some may have the same thickness and some may have different thicknesses.

[0121] The plug PL1 may connect the wiring pattern WR1 to a terminal (any of the gate, source, and drain) of the transistor. The plug PL2 may connect the wiring pattern WR1 to the wiring pattern WR2. The lower electrode of the capacitor element (405 or 406) may be connected to the driving transistor 401 via the plug PL3, the wiring pattern WR2, the plug PL2, the wiring pattern WR1, and the plug PL1. The upper electrode of the capacitor element (405 or 406) may be connected to the wiring pattern WR3 via the plug PL5.

[0122] The wiring pattern WR3 may be connected to a transistor (in FIG. 15, any one of the drive transistor, current control transistor, and reset transistor) via a plug PL4, a wiring pattern WR2, a plug PL2, a wiring pattern WR1, and a plug PL1. The anode 414 may be connected to the source 467 of the drive transistor 401 via a plug PL6, a wiring pattern WR3, a plug PL4, a wiring pattern WR2, a plug PL2, a wiring pattern WR1, and a plug PL1.

[0123] The plugs may be formed in a separate process from the wiring pattern, or may be formed in the same process as the wiring pattern disposed on the plugs. For example, the wiring pattern WR2 and the plug PL2 may be formed in the same process and made of the same material. Also, the wiring pattern WR3 and the plug PL4 may be formed in the same process and made of the same material. The wiring patterns and plugs may be formed using a metal such as copper, tungsten, aluminum, or titanium, or an alloy thereof.

[0124] In this way, by using a semiconductor substrate as the substrate and using MOS transistors as the transistors in each pixel, the transistors can be arranged more densely than when thin film transistors are used. Therefore, by configuring the light-emitting device of this embodiment to have a semiconductor substrate and MOS transistors as the transistors, the light-emitting device can be made higher-definition or smaller.

[0125] FIG. 16(a) shows an example of a pixel arranged in the light-emitting device 100. The pixel has sub-pixels 810 (corresponding to the pixel PIX described above). The sub-pixels are divided into 810R, 810G, and 810B based on their light emission. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel has a reflective electrode 802 serving as a first electrode on an interlayer insulating layer 801, an insulating layer 803 covering the edges of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 serving as a second electrode, a protective layer 806, and a color filter 807.

[0126] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 801. The transistor and the first electrode may be electrically connected via a contact hole (not shown) or the like.

[0127] The insulating layer 803 may also be called a bank or a pixel separation film. The insulating layer 803 covers the edges of the first electrodes and is disposed to surround the first electrodes. The portions of the first electrodes not covered by the insulating layer 803 come into contact with the organic compound layer 804 and become light-emitting regions.

[0128] The organic compound layer 804 includes a hole injection layer 841 , a hole transport layer 842 , a first light-emitting layer 843 , a second light-emitting layer 844 , and an electron transport layer 845 .

[0129] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0130] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer structure. Each layer may be an inorganic compound layer and an organic compound layer.

[0131] The color filters 807 are divided into 807R, 807G, and 807B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be disposed on the color filters. The color filters may be formed on a protective layer 806. The color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0132] A display device 800 (corresponding to the above-described light-emitting device 100) in FIG. 16(b) includes an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 made of glass, silicon, or the like is provided with an insulating layer 812 on top of it. An active element such as the TFT 818 is disposed on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are disposed on top of the insulating layer. The TFT 818 also includes a semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on top of the TFT 818. An anode 821 constituting the organic light-emitting element 826 and the source electrode 817 are connected via a contact hole 820 provided in the insulating film.

[0133] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Figure 16(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0134] 16(b), the organic compound layer is illustrated as a single layer, but the organic compound layer 822 may be a multi-layer structure. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce deterioration of the organic light-emitting element.

[0135] In the display device 800 of FIG. 16(b), transistors are used as switching elements, but other switching elements may be used instead.

[0136] Furthermore, the transistors used in the display device 800 of Fig. 16(b) are not limited to transistors using single-crystal silicon wafers, but may also be thin-film transistors having an active layer on an insulating surface of a substrate. Examples of active layers include non-single-crystal silicon such as single-crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin-film transistors are also called TFT elements.

[0137] The transistors included in the display device 800 of Figure 16(b) may be formed within a substrate such as a silicon substrate. Here, "formed within a substrate" means that the substrate itself, such as a silicon substrate, is processed to form the transistors. In other words, having a transistor within a substrate can also be seen as the substrate and the transistor being formed integrally.

[0138] The organic light-emitting element according to this embodiment has its light emission brightness controlled by a TFT, which is an example of a switching element. By providing multiple organic light-emitting elements on a surface, an image can be displayed based on the respective light emission brightnesses. Here, the switching element according to this embodiment is not limited to a TFT, but may also be a transistor formed from low-temperature polysilicon or an active matrix driver formed on a substrate such as a silicon substrate. "On the substrate" can also be referred to as "inside the substrate." Whether to provide a transistor in the substrate or to use a TFT is determined by the size of the display unit. For example, if the size is about 0.5 inches, the organic light-emitting element may be provided on a silicon substrate.

[0139] 17(a) to 17(c) are schematic diagrams illustrating an example of an image forming apparatus using the light emitting device 100 of this embodiment. The image forming apparatus 926 shown in Fig. 17(a) includes a photoconductor 927, an exposure light source 928, a developing unit 931, a charging unit 930, a transfer unit 932, a transport unit 933 (the transport roller in the configuration of Fig. 17(a)), and a fixing unit 935.

[0140] Light 929 is emitted from an exposure light source 928, and an electrostatic latent image is formed on the surface of a photoconductor 927. The light-emitting device 100 can be applied to this exposure light source 928. A developing unit 931 contains toner or the like as a developer and can function as a developing device that applies the developer to the exposed photoconductor 927. A charging unit 930 charges the photoconductor 927. A transfer unit 932 transfers the developed image to a recording medium 934. A transport unit 933 transports the recording medium 934. The recording medium 934 can be, for example, paper or film. A fixing unit 935 fixes the image formed on the recording medium.

[0141] 17(b) and 17(c) are schematic diagrams showing an exposure light source 928 in which a plurality of light-emitting sections 936 are arranged along the longitudinal direction of a long substrate. The light-emitting device 100 can be applied to this light-emitting section 936. In other words, a plurality of pixels are arranged along the longitudinal direction of the substrate. A direction 937 is parallel to the axis of the photosensitive member 927. This column direction is the same as the axial direction of the photosensitive member 927 when it rotates. This direction 937 can also be called the long axis direction of the photosensitive member 927.

[0142] FIG. 17(b) shows a configuration in which the light-emitting units 936 are arranged along the longitudinal direction of the photosensitive element 927. FIG. 17(c) shows a modified configuration of the arrangement of the light-emitting units 936 shown in FIG. 17(b), in which the light-emitting units 936 are arranged alternately in the column direction in the first and second columns. The light-emitting units 936 are arranged at different positions in the row direction in the first and second columns. In the first column, multiple light-emitting units 936 are arranged at intervals, and in the second column, light-emitting units 936 are arranged at positions corresponding to the gaps between the light-emitting units 936 in the first column. The multiple light-emitting units 936 are also arranged at intervals in the row direction. The arrangement of the light-emitting units 936 shown in FIG. 17(c) can be described as, for example, a grid-like arrangement, a houndstooth arrangement, or a checkerboard pattern.

[0143] FIG. 18 is a schematic diagram illustrating an example of a display device using the light-emitting device 100 of this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected to flexible printed circuits FPCs 1002 and 1004. Active elements such as transistors are disposed on the circuit board 1007. The battery 1008 may not be disposed if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be disposed in this position. The light-emitting device 100 can be applied to the display panel 1005. Pixels PIX disposed in the light-emitting device 100 functioning as the display panel 1005 are connected to active elements such as transistors disposed on the circuit board 1007 and operate.

[0144] The display device 1000 shown in FIG. 18 may be used as a display unit of a photoelectric conversion device (which may also be called an imaging device) that has an optical unit with multiple lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device or a display unit located within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0145] FIG. 19 is a schematic diagram illustrating an example of a photoelectric conversion device using the light-emitting device 100 of this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. The light-emitting device 100 of this embodiment can be applied to the viewfinder 1101 or the rear display 1102, which are display units. In this case, the light-emitting device 100 may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject is moving, the possibility that the subject will be blocked by an obstruction, and the like.

[0146] Since the timing suitable for capturing an image is often very short, it is better to display information as soon as possible. Therefore, a light-emitting device 100 in which pixels including light-emitting elements O using an organic light-emitting material such as an organic EL element are arranged may be used in a viewfinder 1101 or a rear display 1102. This is because organic light-emitting materials have a fast response speed. A light-emitting device 100 using an organic light-emitting material is more suitable than a liquid crystal display device for these devices, which require a high display speed.

[0147] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0148] The light-emitting device 100 may be applied to a display unit of an electronic device. In this case, the light-emitting device 100 may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0149] FIG. 20 is a schematic diagram showing an example of an electronic device using the light-emitting device 100 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint to perform unlocking, etc. A portable device having a communication unit can also be called a communication device. The light-emitting device 100 of this embodiment can be applied to the display unit 1201.

[0150] 21(a) and 21(b) are schematic diagrams illustrating an example of a display device using the light-emitting device 100 of this embodiment. FIG. 21(a) illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device 100 of this embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 21(a). For example, the bottom edge of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0151] FIG. 21(b) is a schematic diagram illustrating another example of a display device using the light-emitting device 100 of this embodiment. The display device 1310 of FIG. 21(b) is configured to be bendable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 100 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display unit without any joints. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit 1312 may display a single image.

[0152] FIG. 22 is a schematic diagram illustrating an example of a lighting device using the light-emitting device 100 of this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light-emitting device 100 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse light from the light source, such as for lighting, and deliver the light over a wide area. If necessary, a cover may be provided on the outermost part. The lighting device 1400 may include both the optical film 1404 and the light diffusion unit 1405, or only one of them.

[0153] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device 1400 may have a power supply circuit connected to the light-emitting device 100 that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage into DC voltage. White has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat sink. The heat sink dissipates heat from within the device to the outside, and examples of the heat sink include metal with a high specific heat, liquid silicon, etc.

[0154] FIG. 23 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the light-emitting device 100 of this embodiment. The automobile 1500 may have a tail lamp 1501 that is turned on when the brakes are applied, for example. The light-emitting device 100 of this embodiment may be used as a headlamp as a vehicle lamp. An automobile is an example of a mobile body, and the mobile body may be a ship, a drone, an aircraft, a railcar, an industrial robot, or the like. The mobile body may have a body and a lamp provided thereon. The lamp may indicate the current location of the body.

[0155] The light emitting device 100 of this embodiment can be applied to a tail lamp 1501. The tail lamp 1501 may have a protective member that protects the light emitting device 100 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, and may be made of polycarbonate or the like. The protective member may also be made by mixing a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like with polycarbonate.

[0156] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display such as a head-up display. The light-emitting device 100 of this embodiment may be used in the transparent display. In this case, the constituent materials of the electrodes and the like of the light-emitting device 100 are made of transparent materials.

[0157] 24(a) and 24(b), a further application example of the light-emitting device 100 of this embodiment will be described. The light-emitting device 100 can be applied to systems that can be worn as a wearable device, such as smart glasses, a head-mounted display (HMD), or smart contact lenses. An image capturing and displaying device used in such an application example has an image capturing device capable of photoelectrically converting visible light and a light-emitting device capable of emitting visible light.

[0158] 24(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, the light-emitting device 100 of this embodiment is provided on the back side of the lens 1601.

[0159] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the light emitting device 100 according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the light emitting device 100. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0160] FIG. 24(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device corresponding to the imaging device 1602 and a light-emitting device 100. A lens 1611 includes an optical system for projecting light emitted from the imaging device in the control device 1612 and the light-emitting device 100, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the light-emitting device 100 and controls the operation of the imaging device and the light-emitting device 100. The control device 1612 may also include a gaze detection unit that detects the gaze of the wearer. Infrared light may be used for gaze detection. The infrared light emitter emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit having a light-receiving element detects the emitted infrared light reflected from the eyeball, thereby obtaining an image of the eyeball. By providing a reduction means for reducing the amount of light from the infrared light emitting section to the display section in a plan view, degradation of image quality is reduced.

[0161] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using the image of the eyeball. As an example, a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0162] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0163] The light emitting device 100 according to the embodiment of the present disclosure may include an imaging device having a light receiving element, and may control the display image based on user line of sight information from the imaging device.

[0164] Specifically, based on the line-of-sight information, the light-emitting device 100 determines a first field of view area where the user gazes and a second field of view area other than the first field of view area. The first field of view area and the second field of view area may be determined by a control device of the light-emitting device 100, or may be determined by an external control device and received. In the display area of ​​the light-emitting device 100, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0165] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the light-emitting device 100, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0166] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the actual direction in which the eyeball in the image was looking. The AI ​​program may be included in the light-emitting device 100, the imaging device, or an external device. If included in an external device, it is transmitted to the light-emitting device 100 via communication.

[0167] When display control is performed based on visual recognition detection, the smart glasses can be applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0168] The disclosure herein includes the following light emitting devices and image forming apparatuses.

[0169] (Item 1) A light-emitting device comprising: a plurality of pixels arranged to form a plurality of rows and a plurality of columns on a rectangular substrate having long sides in the row direction and short sides in the column direction; and a scanning circuit, Each of the plurality of pixels includes a light emitting element and a drive circuit for driving the light emitting element, the scanning circuit includes a plurality of data retention circuits provided corresponding to the plurality of columns, each data holding circuit includes a plurality of memory circuits each holding data for controlling the drive circuits disposed in the plurality of pixels in a corresponding column; A light-emitting device, wherein the plurality of memory circuits in each data holding circuit include a first memory circuit and a second memory circuit arranged side by side in the row direction.

[0170] (Item 2) 2. The light-emitting device according to item 1, wherein in each of the plurality of columns, the drive circuits arranged in the plurality of pixels in the corresponding column are arranged in a line in the column direction.

[0171] (Item 3) 3. The light-emitting device according to item 1 or 2, wherein the length of the driving circuit in the row direction is longer than the length of the memory circuit corresponding to the driving circuit among the plurality of memory circuits in the row direction.

[0172] (Item 4) 4. The light-emitting device according to any one of items 1 to 3, wherein the circuit layout of the first memory circuit and the circuit layout of the second memory circuit are different from each other.

[0173] (Item 5) 5. The light-emitting device according to any one of items 1 to 4, wherein, in a plan view, the first memory circuit and the second memory circuit have different outer edge shapes.

[0174] (Item 6) A light-emitting device described in any one of items 1 to 5, characterized in that the length in the column direction in which the first memory circuit is arranged and the length in the column direction in which the second memory circuit is arranged are different from each other.

[0175] (Item 7) 7. The light-emitting device according to any one of items 1 to 6, wherein an aspect ratio obtained by dividing the length in the column direction in which the first memory circuit is arranged by the length in the row direction and an aspect ratio obtained by dividing the length in the column direction in which the second memory circuit is arranged by the length in the row direction are different from each other.

[0176] (Item 8) the plurality of memory circuits in each data retention circuit include a first type memory circuit including the first memory circuit and a second type memory circuit including the second memory circuit; the length of the first type memory circuit in the column direction is longer than the length of the second type memory circuit in the column direction; 8. The light-emitting device according to any one of items 1 to 7, wherein in each data holding circuit, the number of the first type memory circuits is smaller than the number of the second type memory circuits.

[0177] (Item 9) 9. The light-emitting device according to item 8, wherein the length in the row direction in which the first type memory circuits are arranged is shorter than the length in the row direction in which the second type memory circuits are arranged.

[0178] (Item 10) Item 10. The light-emitting device according to item 8 or 9, characterized in that the aspect ratio obtained by dividing the length in the column direction in which the first type memory circuits are arranged by the length in the row direction is larger than the aspect ratio obtained by dividing the length in the column direction in which the second type memory circuits are arranged by the length in the row direction.

[0179] (Item 11) the plurality of memory circuits in each data retention circuit further includes a third memory circuit that is the second type memory circuit; The second memory circuit and the third memory circuit are arranged side by side in the column direction, and the first memory circuit and the third memory circuit are arranged side by side in the row direction. The light-emitting device according to any one of Items 8 to 10, characterized in that.

[0180] (Item 12) The plurality of memory circuits in each data holding circuit further includes a fourth memory circuit which is the second type of memory circuit. The second memory circuit, the third memory circuit, and the fourth memory circuit are arranged side by side in the column direction, and the first memory circuit and the fourth memory circuit are arranged side by side in the row direction. The light-emitting device according to Item 11, characterized in that.

[0181] (Item 13) In each data holding circuit, the first memory circuit and each of a predetermined number of the second type of memory circuits are arranged side by side in the row direction, and each of the predetermined number of the second type of memory circuits is arranged side by side in the column direction. When the length in the column direction where the first memory circuit is arranged is L1, and the interval between the predetermined number of the second type of memory circuits arranged side by side in the column direction is L2. L2 < L1 < L2 × (predetermined number) The light-emitting device according to any one of Items 8 to 12, characterized in that the relationship is satisfied.

[0182] (Item 14) The scanning circuit further includes a column selection circuit for selecting a holding circuit for writing the data among the plurality of data holding circuits. In each of the plurality of columns, a data holding circuit corresponding to each column is arranged between the driving circuit and the column selection circuit. The light-emitting device according to any one of Items 1 to 13, characterized in that.

[0183] (Item 15) Item 15. The light-emitting device according to item 14, wherein the column selection circuit simultaneously selects at least two data retention circuits from among the plurality of data retention circuits.

[0184] (Item 16) Item 16. The light-emitting device according to item 15, wherein the at least two data retention circuits include data retention circuits provided corresponding to adjacent columns among the plurality of columns.

[0185] (Item 17) the plurality of data retention circuits include a first data retention circuit and a second data retention circuit provided corresponding to adjacent columns among the plurality of columns; 17. The light-emitting device according to any one of items 1 to 16, characterized in that, in a planar view, the elements arranged in the plurality of memory circuits in the first data retention circuit and the elements arranged in the plurality of memory circuits in the second data retention circuit are arranged in positions that are symmetrical with respect to an imaginary line that passes through the boundary between the first data retention circuit and the second data retention circuit.

[0186] (Item 18) The light-emitting device described in any one of items 1 to 17, characterized in that the driving circuit includes a first transistor that controls the current flowing through the light-emitting element, and a second transistor that receives a signal corresponding to the data at its control terminal and controls the light-emitting element to emit or not emit light.

[0187] (Item 19) Each data holding circuit includes a plurality of transistors that constitute the plurality of memory circuits, 19. The light-emitting device according to any one of items 1 to 18, wherein the plurality of transistors are arranged so as to pass a current in the row direction in a channel region.

[0188] (Item 20) 20. The light-emitting device according to item 19, wherein the plurality of transistors are all transistors that constitute each of the plurality of memory circuits.

[0189] (Item 21) a photoreceptor, an exposure light source for exposing the photoreceptor, a developing device for applying a developer to the exposed photoreceptor, and a transfer device for transferring an image developed by the developing device onto a recording medium, 21. An image forming apparatus, wherein the exposure light source comprises the light emitting device according to any one of items 1 to 20.

[0190] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0191] 100: light emitting device, 110: substrate, 150,0: light emitting element, 317: scanning circuit, 332: driving circuit, 360: data holding circuit, 400: memory circuit, PIX: pixel

Claims

1. A light-emitting device comprising: a plurality of pixels arranged to form a plurality of rows and a plurality of columns on a rectangular substrate having long sides in the row direction and short sides in the column direction; and a scanning circuit, Each of the plurality of pixels includes a light emitting element and a drive circuit for driving the light emitting element, the scanning circuit includes a plurality of data retention circuits provided corresponding to the plurality of columns, each data holding circuit includes a plurality of memory circuits each holding data for controlling the drive circuits disposed in the plurality of pixels in a corresponding column; a first memory circuit and a second memory circuit arranged in the row direction; a data holding circuit arranged in the row direction;

2. The light-emitting device according to claim 1 , wherein the driving circuits arranged in the pixels in a corresponding column are arranged in the column direction.

3. 2. The light-emitting device according to claim 1, wherein the length of the drive circuit in the row direction is longer than the length of a memory circuit in the row direction that corresponds to the drive circuit among the plurality of memory circuits.

4. 2. The light emitting device of claim 1, wherein the first memory circuit and the second memory circuit have different circuit layouts.

5. 2. The light-emitting device according to claim 1, wherein an outer edge shape of the first memory circuit and an outer edge shape of the second memory circuit are different from each other in a plan view.

6. The light-emitting device according to claim 1 , wherein a length in the column direction in which the first memory circuits are arranged is different from a length in the column direction in which the second memory circuits are arranged.

7. 2. The light-emitting device according to claim 1, wherein an aspect ratio obtained by dividing the length in the column direction in which the first memory circuit is arranged by the length in the row direction and an aspect ratio obtained by dividing the length in the column direction in which the second memory circuit is arranged by the length in the row direction are different from each other.

8. the plurality of memory circuits in each data retention circuit include a first type memory circuit including the first memory circuit and a second type memory circuit including the second memory circuit; the length of the first type memory circuit in the column direction is longer than the length of the second type memory circuit in the column direction; 2. The light-emitting device according to claim 1, wherein in each data retention circuit, the number of the first type memory circuits is less than the number of the second type memory circuits.

9. The light-emitting device according to claim 8 , wherein the length in the row direction in which the first type memory circuits are arranged is shorter than the length in the row direction in which the second type memory circuits are arranged.

10. 9. The light-emitting device according to claim 8, wherein an aspect ratio obtained by dividing the length in the column direction in which the first type memory circuits are arranged by the length in the row direction is greater than an aspect ratio obtained by dividing the length in the column direction in which the second type memory circuits are arranged by the length in the row direction.

11. the plurality of memory circuits in each data retention circuit further includes a third memory circuit that is the second type memory circuit; The light-emitting device according to claim 8, characterized in that the second memory circuit and the third memory circuit are arranged side by side in the column direction, and the first memory circuit and the third memory circuit are arranged side by side in the row direction.

12. the plurality of memory circuits in each data retention circuit further includes a fourth memory circuit that is the second type memory circuit; The light-emitting device of claim 11, wherein the second memory circuit, the third memory circuit, and the fourth memory circuit are arranged side by side in the column direction, and the first memory circuit and the fourth memory circuit are arranged side by side in the row direction.

13. In each data holding circuit, the first memory circuit and a predetermined number of the second type memory circuits are arranged side by side in the row direction, and the predetermined number of the second type memory circuits are arranged side by side in the column direction; When the length in the column direction in which the first memory circuits are arranged is L1 and the interval at which the predetermined number of second type memory circuits are arranged in the column direction is L2, L2<L1<L2×(predetermined number) 9. The light-emitting device according to claim 8, wherein the following relationship is satisfied:

14. the scanning circuit further includes a column selection circuit for selecting a retention circuit to which the data is to be written from among the plurality of data retention circuits; 2. The light-emitting device according to claim 1, wherein a data holding circuit corresponding to each of the plurality of columns is disposed between the drive circuit and the column selection circuit in each of the plurality of columns.

15. 15. The light emitting device according to claim 14, wherein the column selection circuit simultaneously selects at least two data retention circuits from among the plurality of data retention circuits.

16. 16. The light-emitting device according to claim 15, wherein the at least two data retention circuits include data retention circuits provided corresponding to adjacent columns among the plurality of columns.

17. the plurality of data retention circuits include a first data retention circuit and a second data retention circuit provided corresponding to adjacent columns among the plurality of columns; 2. The light-emitting device according to claim 1, wherein, in a planar view, the elements arranged in the plurality of memory circuits in the first data retention circuit and the elements arranged in the plurality of memory circuits in the second data retention circuit are arranged in positions that are symmetrical with respect to an imaginary line passing through the boundary between the first data retention circuit and the second data retention circuit.

18. 2. The light-emitting device according to claim 1, wherein the driving circuit includes a first transistor that controls the current flowing through the light-emitting element, and a second transistor that receives a signal corresponding to the data at its control terminal and controls the light-emitting element to emit or not emit light.

19. Each data holding circuit includes a plurality of transistors that constitute the plurality of memory circuits, The light-emitting device according to claim 1 , wherein the plurality of transistors are arranged so as to pass a current in the row direction in a channel region thereof.

20. 20. The light-emitting device according to claim 19, wherein the plurality of transistors are all transistors that constitute each of the plurality of memory circuits.

21. a photoreceptor, an exposure light source for exposing the photoreceptor, a developing device for applying a developer to the exposed photoreceptor, and a transfer device for transferring an image developed by the developing device onto a recording medium, 21. An image forming apparatus, wherein the exposure light source comprises the light emitting device according to claim 1.

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