Imaging apparatus

Abstract

To prevent moisture or the like from being easily diffused in a second insulation film.SOLUTION: An imaging apparatus 12 includes: an imaging element 25; a first circuit element 26B which is arranged on the lower-layer side of the imaging element 25; a first insulation film 34 which is arranged on the upper-layer side of the imaging element 25; a second insulation film 35 which is arranged on the upper-layer side of the first insulation film 34; and a third insulation film 36 which is arranged on the upper-layer side of the second insulation film 35. Each of the first insulation film 34 and the third insulation film 36 includes an inorganic insulation material. The second insulation film 35 includes an organic insulation material and has a first opening 35A overlapping with a part of the first circuit element 26B. The third insulation film 36 has a first covering part 36A for covering the opening edge of the first opening 35A in the second insulation film 35.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The technology disclosed in this specification relates to an imaging device in which moisture and the like are less likely to diffuse into the second insulating film. [Background technology]

[0002] One example of a conventionally known imaging device is that described in Patent Document 1. The imaging device described in Patent Document 1 has a plurality of pixels arranged two-dimensionally on a substrate, each pixel paired with a semiconductor conversion element that converts incident electromagnetic waves into an electric signal and a switch element connected to the semiconductor conversion element, a drive wiring commonly connected to the plurality of switch elements arranged in one direction, and a signal wiring commonly connected to the plurality of switch elements arranged in a direction different from the one direction, the switch elements including a first semiconductor layer, the semiconductor conversion elements being formed after the formation of the switch elements and including a second semiconductor layer formed after the formation of the first semiconductor layer, and the electrodes of the semiconductor conversion elements being formed in a region where the drive wiring, the electrodes of the switch elements, and the signal wiring do not overlap with each other, excluding at least a portion on the drive wiring and at least a portion on the electrodes of the switch elements. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-179645 Summary of the Invention [Problem to be solved by the invention]

[0004] In the above-mentioned Patent Document 1, openings are formed in the lower electrode, n-type semiconductor layer, second semiconductor layer, and p-type semiconductor layer, which are electrodes of a photodiode, which is a semiconductor conversion element, and then a protective layer made of SiN and an organic film is formed. Electrical testing is then performed, and defective portions are laser repaired as needed. During laser repair, film defects may occur in the protective layer due to irradiation with laser light. This raises concerns that moisture or the like may diffuse into the protective layer from the defective portion. If moisture or the like diffuses into the protective layer, there is a risk that the characteristics of the photodiode may be deteriorated due to the moisture or the like.

[0005] The technology described in this specification was developed based on the above circumstances, and aims to make it difficult for moisture and the like to diffuse into the second insulating film. [Means for solving the problem]

[0006] (1) An imaging device related to the technology described in this specification comprises an imaging element, a first circuit element arranged below the imaging element, a first insulating film arranged above the imaging element, a second insulating film arranged above the first insulating film, and a third insulating film arranged above the second insulating film, wherein the first insulating film and the third insulating film each contain an inorganic insulating material, the second insulating film contains an organic insulating material, and has a first opening that overlaps a portion of the first circuit element, and the third insulating film has a first covering portion that covers an opening edge of the first opening in the second insulating film.

[0007] (2) In addition to (1), the imaging device may further include a second circuit element arranged above the third insulating film and a fourth insulating film arranged above the second circuit element, and the fourth insulating film may include an inorganic insulating material and have a second covering portion that covers the first covering portion.

[0008] (3) In addition to (1) or (2), the imaging device may further include a fifth insulating film arranged above the third insulating film, the fifth insulating film including an organic insulating material and filling the first opening.

[0009] (4) In addition to any one of (1) to (3), the imaging device may be configured such that the first insulating film and the third insulating film each contain silicon nitride as an inorganic insulating material.

[0010] (5) In addition to any one of (1) to (4), the imaging device may further include a switching element arranged below the imaging element, and a sixth insulating film arranged above the switching element and below the imaging element, wherein the switching element includes the first circuit element or is connected to the first circuit element, the sixth insulating film includes an organic insulating material and has a second opening overlapping the first opening, and the third insulating film may have a third covering portion covering an opening edge of the second opening in the sixth insulating film.

[0011] (6) In addition to (5) above, the imaging device may also be such that the first insulating film has a fourth covering portion that covers the opening edge of the second opening in the sixth insulating film, and the third covering portion covers the fourth covering portion.

[0012] (7) In addition to (5) or (6), the imaging device may further include a second circuit element arranged above the third insulating film and a fourth insulating film arranged above the second circuit element, and the fourth insulating film may include an inorganic insulating material and have a fifth covering portion that covers the third covering portion.

[0013] (8) In addition to any one of (5) to (7), the imaging device may further include a seventh insulating film arranged above the sixth insulating film, the seventh insulating film including an inorganic insulating material, and a sixth covering portion covering the opening edge of the second opening in the sixth insulating film.

[0014] (9) In addition to any one of (5) to (8), the imaging device may further include a fifth insulating film arranged above the third insulating film, the fifth insulating film including an organic insulating material, and a first filling portion filled in the first opening and a second filling portion filled in the second opening.

[0015] (10) In addition to any one of (1) to (9), the imaging device may further include a switching element arranged below the imaging element, the switching element having a gate electrode, a semiconductor portion arranged overlapping the gate electrode with a gap therebetween, a source electrode connected to the semiconductor portion, and a drain electrode connected to the semiconductor portion at a position spaced apart from the source electrode, the imaging element being arranged overlapping the gate electrode, the semiconductor portion, and the drain electrode without overlapping at least a portion of the source electrode, and the first circuit element being the source electrode. [Effects of the Invention]

[0016] According to the technology described in this specification, it is possible to make it difficult for moisture and the like to diffuse into the second insulating film. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 1 is a block diagram showing a schematic configuration of a radiographic imaging system according to a first embodiment. [Figure 2] FIG. 1 is a diagram showing a schematic configuration of an imaging device included in a radiation image capturing system according to a first embodiment. [Figure 3] FIG. 1 is a plan view showing pixels of a substrate provided in an imaging device according to a first embodiment; [Figure 4] 4 is a cross-sectional view of the substrate according to the first embodiment taken along line iv-iv in FIG. 3 . [Figure 5] 4 is a cross-sectional view of the substrate according to the first embodiment taken along line vv in FIG. 3 . [Figure 6] 4 is a cross-sectional view of the substrate according to the first embodiment taken along line vi-vi in ​​FIG. 3 . [Figure 7] 7 is a cross-sectional view of the substrate according to the first embodiment taken along line vii-vii in FIG. 3 . [Figure 8] 5 is a cross-sectional view of the substrate according to the second embodiment taken along the same cutting line as in FIG. 4; [Figure 9] 8 is a cross-sectional view of the substrate according to the second embodiment taken along the same cutting line as in FIG. 7; [Figure 10] FIG. 10 is a plan view showing pixels of a substrate according to a third embodiment; [Figure 11] 10 , taken along line xi-xi of the substrate according to the third embodiment. [Figure 12] 12 is a cross-sectional view of the substrate according to the third embodiment taken along line xii-xii in FIG. [Figure 13] 13 is a cross-sectional view of the substrate according to the third embodiment taken along line xiii-xiii in FIG. 10 . [Figure 14] 14 is a cross-sectional view of the substrate according to the third embodiment taken along line xiv-xiv in FIG. 10 . DETAILED DESCRIPTION OF THE INVENTION

[0018] <Embodiment 1> Embodiment 1 will be described with reference to Figures 1 to 7. In this embodiment, an imaging device 12 provided in a radiographic imaging system 10 is illustrated. Note that the X-axis, Y-axis, and Z-axis are shown in part of each drawing, and each axis direction is depicted as being in the direction shown in each drawing. Furthermore, the up-down direction is based on Figures 4 to 7, with the upper side of each drawing being the front side and the lower side of each drawing being the back side.

[0019] As shown in FIG. 1, a radiation image capturing system 10 includes a radiation irradiating device 11 that irradiates a subject (e.g., a person) 1 with radiation (e.g., X-rays), an imaging device 12 that captures a radiation image (image) by detecting the radiation irradiated from the radiation irradiating device 11 and transmitted through the subject 1, and a control device 13 that controls the radiation irradiating device 11 and the imaging device 12. The radiation irradiated to the subject 1 is irradiated to the imaging device 12 while carrying image information as it passes through the subject 1. The imaging device 12 detects the irradiated radiation at a timing based on the control of the control device 13, and generates a radiation image based on the image information carried by the radiation. The radiation image generated by the imaging device 12 is acquired by the control device 13.

[0020] Next, the imaging device 12 will be described in detail. As shown in FIG. 2, the imaging device 12 includes a substrate 20 having a plurality of pixels 21, a scanning signal control circuit 22 connected to the substrate 20, a signal detection circuit (signal detection unit) 23 connected to the substrate 20, and a control unit 24 connected to the scanning signal control circuit 22 and the signal detection circuit 23. The substrate 20 has a main surface 20A that is divided into an imaging area IA where a plurality of pixels 21 are arranged and a radiation image is captured, and a non-imaging area NIA outside the imaging area IA. The substrate 20 is made of a glass material or the like and is light-transmitting. In the imaging area IA, the pixels 21 are arranged in a matrix along the X-axis direction and the Y-axis direction. The scanning signal control circuit 22, the signal detection circuit 23, and the control unit 24 are provided on a circuit board located outside the substrate 20. A flexible substrate is connected to the non-imaging area NIA of the substrate 20 and the circuit board. Therefore, the scanning signal control circuit 22 and the signal detection circuit 23 provided on the circuit board are connected to the substrate 20 via the flexible substrate. Terminals connected to terminals on the flexible substrate side are provided in the non-imaging area NIA of the substrate 20 in a portion where the flexible substrate is connected. The scanning signal control circuit 22 can output scanning signals for driving the pixels 21. The signal detection circuit 23 can detect signals output from the pixels 21. The substrate 20 is also provided with a scintillator 39 (see FIG. 4) that converts the wavelength of radiation into visible light.

[0021] As shown in Fig. 3, the pixel 21 includes a photoelectric conversion element (imaging element) 25 and a TFT (switching element) 26 connected to the photoelectric conversion element 25. The photoelectric conversion element 25 is a so-called photodiode, and can generate electric charges when it receives visible light whose wavelength has been converted by a scintillator 39. The TFT 26 is driven at a predetermined timing (for example, a timing synchronized with the timing of irradiation of radiation from the radiation irradiation device 11), thereby enabling the electric charges generated in the photoelectric conversion element 25 to be extracted as a signal. The TFT 26 is located near the upper left corner of the pixel 21 in Fig. 3. The photoelectric conversion element 25 constitutes a large portion of the pixel 21 and is arranged to overlap a large portion of the TFT 26.

[0022] As shown in FIG. 3 , the imaging region IA of the substrate 20 is provided with scanning lines 27 and signal lines (second circuit elements) 28, both of which are connected to the TFTs 26. The scanning lines 27 and signal lines 28 intersect each other at right angles and are arranged in plurals to surround the TFTs 26 and the photoelectric conversion elements 25. The scanning lines 27 extend along the X-axis direction, and plural lines are arranged side by side at intervals in the Y-axis direction. The number of the scanning lines 27 corresponds to the number of the pixels 21 in the Y-axis direction. The signal lines 28 extend along the Y-axis direction, and plural lines are arranged side by side at intervals in the X-axis direction. The number of the signal lines 28 corresponds to the number of the pixels 21 in the X-axis direction. The scanning lines 27 are connected to the scanning signal control circuit 22 shown in FIG. 2 and can transmit scanning signals output from the scanning signal control circuit 22 to the TFTs 26. The signal wiring 28 is connected to the signal detection circuit 23 shown in FIG. 2 and can transmit signals output from the TFT 26 (charges generated in the photoelectric conversion elements 25) to the signal detection circuit 23. A specific operation will be described. Under the control of the control device 13, the scanning signal control circuit 22 outputs scanning signals to the scanning wiring 27 in synchronization with the irradiation of radiation by the radiation irradiation device 11, thereby driving the TFT 26 connected to the scanning wiring 27. The visible light generated by the scintillator 39 through wavelength conversion of radiation is received by the photoelectric conversion elements 25, generating charges. The charges are then transmitted as signals by the TFT 26 to the signal wiring 28 and detected by the signal detection circuit 23. In this way, the imaging device 12 can generate radiation images based on signals detected by the signal detection circuit 23.

[0023] 3, power supply wiring (second circuit element) 29 connected to the photoelectric conversion element 25 is provided in the imaging area IA of the substrate 20. The power supply wiring 29 extends along the Y-axis direction in parallel to the signal wiring 28 and vertically crosses the photoelectric conversion element 25. A plurality of power supply wirings 29 are arranged side by side at intervals in the X-axis direction, and are arranged alternately with the signal wirings 28 arranged at intervals in the X-axis direction. A reference potential (bias potential) is supplied to the power supply wiring 29 from an external power source via a flexible substrate or the like. The reference potential can be supplied to the photoelectric conversion element 25 by the power supply wiring 29.

[0024] Here, various films stacked on the main surface 20A of the substrate 20 will be described mainly with reference to Fig. 4. On the substrate 20, as shown in Fig. 4, a first metal film, a gate insulating film 30, a first semiconductor film, a second metal film, a first interlayer insulating film 31, a first planarization film (sixth insulating film) 32, a third metal film, a second interlayer insulating film (seventh insulating film) 33, a fourth metal film, a second semiconductor film, a first transparent electrode film, a third interlayer insulating film (first insulating film) 34, a second planarization film (second insulating film) 35, a fourth interlayer insulating film (third insulating film) 36, a fifth metal film, a second transparent electrode film, a fifth interlayer insulating film (fourth insulating film) 37, a third planarization film (fifth insulating film) 38, and a scintillator 39 are stacked in this order from the lower layer side (the side closer to the substrate 20).

[0025] The first metal film, the second metal film, the third metal film, the fourth metal film, and the fifth metal film are each a single layer film made of one type of metal material, or a laminate film or alloy made of different types of metal materials. Specifically, the first metal film is a laminate film such as W / TaN. The second metal film is a laminate film such as Ti / Al / Ti. The third metal film is a laminate film such as Ti / Al / Ti. The fourth metal film is a single layer film made of Ti. The fifth metal film is a laminate film such as Ti / Al / Ti. Comparing the thicknesses of the second metal film, the third metal film, the fourth metal film, and the fifth metal film, the thickness increases in this order: the fourth metal film, the third metal film, the second metal film, and the fifth metal film. Therefore, comparing the sheet resistances of the second metal film, the third metal film, the fourth metal film, and the fifth metal film, the sheet resistance decreases in this order: the fourth metal film, the third metal film, the second metal film, and the fifth metal film.

[0026] The first semiconductor film and the second semiconductor film are both made of semiconductor materials. Specifically, the first semiconductor film is made of, for example, an oxide semiconductor. The second semiconductor film is formed by stacking, from bottom to top, an n-type semiconductor layer, an i-type semiconductor layer, and a p-type semiconductor layer. The n-type semiconductor layer, the i-type semiconductor layer, and the p-type semiconductor layer constituting the second semiconductor film are all made of, for example, amorphous silicon. The n-type semiconductor layer and the p-type semiconductor layer both contain impurities, whereas the i-type semiconductor layer is an intrinsic semiconductor that does not contain impurities. The first transparent electrode film and the second transparent electrode film are both made of transparent electrode materials. Specifically, the first transparent electrode film and the second transparent electrode film are made of, for example, ITO (Indium Tin Oxide). The scintillator 39 is made of a phosphor that converts the wavelength of radiation into visible light. Specifically, the scintillator 39 is made of, for example, CsI (Cesium Iodide).

[0027] The gate insulating film 30, the first interlayer insulating film 31, the second interlayer insulating film 33, the third interlayer insulating film 34, the fourth interlayer insulating film 36, and the fifth interlayer insulating film 37 are all made of an inorganic insulating material (inorganic material). The gate insulating film 30 is, for example, SiO2 (silicon oxide) / SiN x The first interlayer insulating film 31 is a single layer film such as SiO2. The second interlayer insulating film 33 is a single layer film such as SiN x Alternatively, the third interlayer insulating film 34 is a single layer film of SiO2 or the like. x For example, SiN x The fourth interlayer insulating film 36 is a single layer film of at least SiN x For example, SiN x The fifth interlayer insulating film 37 is a single layer film of at least SiN x For example, SiN xThe first planarization film 32, the second planarization film 35, and the third planarization film 38 are all made of a photosensitive organic insulating material (organic material), and their thicknesses are larger than those of the other insulating films 30, 31, 33, 34, 36, and 37 made of inorganic insulating material. Specifically, the insulating films 30, 31, 33, 34, 36, and 37 made of inorganic insulating material have thicknesses of several hundred nanometers (e.g., 100 nm to 500 nm), while the planarization films 32, 35, and 38 have thicknesses of several micrometers (e.g., 1 μm to 3 μm). The first planarization film 32, the second planarization film 35, and the third planarization film 38 are all made of, for example, a photosensitive acrylic resin. Each of the insulating films 30 to 38 is disposed solidly over almost the entire area of ​​the substrate 20, that is, over both the imaging area IA and the non-imaging area NIA.

[0028] The relationship between the films stacked on the main surface 20A of the substrate 20 and the structures provided in the imaging region IA of the substrate 20 will be described in detail. First, as shown in FIGS. 3 and 4, the TFT 26 has a gate electrode 26A, a source electrode (first circuit element) 26B, a drain electrode 26C, and a semiconductor portion 26D. The gate electrode 26A is made of a first metal film. The gate electrode 26A extends along the Y-axis direction, with one end (lower in FIG. 3) overlapping the semiconductor portion 26D and the other end (upper in FIG. 3) overlapping the scanning line 27. The semiconductor portion 26D is made of a first semiconductor film. The semiconductor portion 26D has a horizontally elongated shape extending along the X-axis direction, and a central portion thereof is arranged to overlap a portion of the gate electrode 26A via a gate insulating film 30. The source electrode 26B and the drain electrode 26C are both made of a second metal film. The source electrode 26B is substantially L-shaped in plan view and includes a first electrode portion 26B1 extending along the X-axis direction and a second electrode portion 26B2 extending along the Y-axis direction. An end of the first electrode portion 26B1 of the source electrode 26B opposite the second electrode portion 26B2 is connected to a portion of the semiconductor portion 26D (the end on the left side in FIGS. 3 and 4). Almost the entire area of ​​the second electrode portion 26B2 of the source electrode 26B is arranged to overlap with a signal wiring 28, which will be described later. The drain electrode 26C is substantially L-shaped in plan view and has one end (the left side in FIGS. 3 and 4) connected to a portion of the semiconductor portion 26D (the end on the right side in FIGS. 3 and 4) at a position spaced apart from the source electrode 26B in the X-axis direction.

[0029] As shown in FIGS. 3 and 5, the scanning line 27 is formed from a portion of the second metal film that is separate from the source electrode 26B and the drain electrode 26C. This reduces wiring resistance compared to when the scanning line is formed from any of the first, third, and fourth metal films. The scanning line 27 extends along the X-axis direction and is disposed above a portion of the gate electrode 26A of the TFT 26 via a gate insulating film 30. A first contact hole CH1 is formed in the gate insulating film 30 at a position that overlaps both the gate electrode 26A and the scanning line 27. The gate electrode 26A and the scanning line 27 are connected through the first contact hole CH1. As a result, a scanning signal transmitted by the scanning line 27 is supplied to the gate electrode 26A.

[0030] As shown in FIGS. 3 and 6 , the signal wiring 28 has a layered structure including a fifth metal film and a second transparent electrode film. This reduces wiring resistance compared to when the signal wiring is configured using any one of the first, second, third, and fourth metal films. The signal wiring 28 extends along the Y-axis direction. The signal wiring 28 is disposed above the second electrode portion 26B2 of the source electrode 26B of the TFT 26, with the gate insulating film 30, the first interlayer insulating film 31, the first planarization film 32, the second interlayer insulating film 33, the third interlayer insulating film 34, the second planarization film 35, and the fourth interlayer insulating film 36 interposed therebetween. An intermediate electrode 40 made of the third metal film is provided at a position overlapping both the signal wiring 28 and the second electrode portion 26B2 of the source electrode 26B. The intermediate electrode 40 has a vertically elongated rectangular shape extending along the Y-axis direction and is disposed so as to overlap both the second electrode portion 26B2 of the source electrode 26B and the signal wiring 28. A first interlayer insulating film 31 and a first planarization film 32 are interposed between the intermediate electrode 40 and the second electrode portion 26B2 of the source electrode 26B. A second contact hole CH2 is opened and provided in the first interlayer insulating film 31 and the first planarization film 32 at a position where the first interlayer insulating film 31 and the first planarization film 32 overlap the intermediate electrode 40 and the second electrode portion 26B2 of the source electrode 26B. The intermediate electrode 40 and the second electrode portion 26B2 of the source electrode 26B are connected through the second contact hole CH2. A second interlayer insulating film 33, a third interlayer insulating film 34, a second planarization film 35, and a fourth interlayer insulating film 36 are interposed between the intermediate electrode 40 and the signal wiring 28. Third contact holes CH3 are formed in the second interlayer insulating film 33, the third interlayer insulating film 34, the second planarizing film 35, and the fourth interlayer insulating film 36 at positions that overlap the intermediate electrode 40 and the signal line 28. The intermediate electrode 40 and the signal line 28 are connected through the third contact holes CH3. In this manner, the signal line 28 is connected to the source electrode 26B via the intermediate electrode 40. This allows charges present in the source electrode 26B to be transmitted as signals to the signal line 28. The signal line 28 also intersects with the scanning line 27 via the gate insulating film 30, the first interlayer insulating film 31, the first planarizing film 32, the second interlayer insulating film 33, the third interlayer insulating film 34, the second planarizing film 35, and the fourth interlayer insulating film 36.In this way, by interposing the plurality of insulating films 30 to between the scanning wiring 27 and the signal wiring , it is possible to reduce the parasitic capacitance.

[0031] As shown in FIGS. 3 and 4 , the power supply wiring 29 has a laminated structure including a fifth metal film and a portion of the second transparent electrode film that is separate from the signal wiring 28. The power supply wiring 29 extends along the Y-axis direction and has a first widened portion 29A that is partially widened. The main portion (non-widened portion) of the power supply wiring 29 is disposed so as to overlap a portion of the photoelectric conversion element 25, which will be described below. The first widened portion 29A of the power supply wiring 29 is disposed so as to overlap a central portion of the photoelectric conversion element 25. The connection structure between the power supply wiring 29 and the photoelectric conversion element 25 will be described later. Similarly to the signal wiring 28, the power supply wiring 29 intersects with the scanning wiring 27 via a gate insulating film 30, a first interlayer insulating film 31, a first planarization film 32, a second interlayer insulating film 33, a third interlayer insulating film 34, a second planarization film 35, and a fourth interlayer insulating film 36.

[0032] As shown in FIGS. 3 and 4, the photoelectric conversion element 25 includes a lower electrode 25A, a photoelectric conversion layer 25B stacked on the upper side of the lower electrode 25A, and an upper electrode 25C stacked between the lower electrode 25A and the photoelectric conversion layer 25B. The lower electrode 25A has a stacked structure of a first lower electrode 25A1 made of a third metal film and a second lower electrode 25A2 made of a fourth metal film. A second interlayer insulating film 33 is interposed between the first lower electrode 25A1 and the second lower electrode 25A2. A fourth contact hole CH4 is opened in the second interlayer insulating film 33 at a position overlapping both the first lower electrode 25A1 and the second lower electrode 25A2. The first lower electrode 25A1 and the second lower electrode 25A2 are connected through the fourth contact hole CH4.

[0033] As shown in FIGS. 3 and 4, the photoelectric conversion element 25 (the lower electrode 25A, the photoelectric conversion layer 25B, and the upper electrode 25C) is disposed so as to overlap most of the TFT 26. Specifically, the photoelectric conversion element 25 is disposed so as to overlap almost the entire area of ​​each of the gate electrode 26A, the drain electrode 26C, and the semiconductor portion 26D of the TFT 26, and a portion of the source electrode 26B (specifically, a portion of the first electrode portion 26B1 connected to the semiconductor portion 26D and a portion adjacent thereto). In this way, the photoelectric conversion element 25 is disposed so as to occupy most of the area surrounded by the scanning wiring 27 and the signal wiring 28, and therefore has a larger area than if the photoelectric conversion element 25 were disposed so as not to overlap the TFT 26. This can enhance the sensitivity of the photoelectric conversion element 25. The photoelectric conversion element 25 is arranged so as not to overlap the portion of the first electrode portion 26B1 of the source electrode 26B adjacent to the signal line 28. This is to avoid short-circuiting between the intermediate electrode 40, both made of a third metal film, and the first lower electrode 25A1. The first lower electrode 25A1 of the lower electrode 25A is arranged so as to overlap the other end of the drain electrode 26C (the right side in FIGS. 3 and 4). A first interlayer insulating film 31 and a first planarizing film 32 are interposed between the first lower electrode 25A1 and the drain electrode 26C. A fifth contact hole CH5 is opened and provided in the first interlayer insulating film 31 and the first planarizing film 32 at a position where they overlap both the first lower electrode 25A1 and the drain electrode 26C. The first lower electrode 25A1 and the drain electrode 26C are connected through the fifth contact hole CH5.

[0034] As shown in FIG. 4, the photoelectric conversion layer 25B has a stacked structure including, from bottom to top, an n-type semiconductor portion 25BN formed from the n-type semiconductor layer of the second semiconductor film, an i-type semiconductor portion 25BI formed from the i-type semiconductor layer of the second semiconductor film, and a p-type semiconductor portion 25BP formed from the p-type semiconductor layer of the second semiconductor film. Therefore, the photoelectric conversion element 25 according to this embodiment is a so-called PIN-type photodiode. The n-type semiconductor portion 25BN contacts the second lower electrode 25A2 of the lower electrode 25A. Upon receiving visible light, the photoelectric conversion layer 25B generates charges according to the amount of light received. The charges generated in the photoelectric conversion layer 25B are collected by the lower electrode 25A.

[0035] As shown in FIGS. 4 and 7 , the upper electrode 25C has a single-layer structure made of a first transparent electrode film. The upper electrode 25C contacts the p-type semiconductor portion 25BP of the photoelectric conversion layer 25B. The upper electrode 25C is connected to the first widened portion 29A of the power supply wiring 29. Therefore, a reference potential is supplied to the upper electrode 25C via the power supply wiring 29. A third interlayer insulating film 34, a second planarization film 35, and a fourth interlayer insulating film 36 are interposed between the upper electrode 25C and the first widened portion 29A of the power supply wiring 29. A sixth contact hole CH6 is opened and provided in the third interlayer insulating film 34, the second planarization film 35, and the fourth interlayer insulating film 36 at positions overlapping the upper electrode 25C and the first widened portion 29A. The upper electrode 25C and the first widened portion 29A are connected through the sixth contact hole CH6. The scintillator 39 is provided on the third planarization film 38 in a solid state over at least the entire imaging area IA, and is disposed so as to cover all the pixels 21. The photoelectric conversion element 25 having such a configuration is made of an inorganic insulating material such as SiN x Since the photoelectric conversion element 25 is covered almost entirely from the upper layer side with the third interlayer insulating film 34 including the insulating film 34, moisture and the like are less likely to penetrate into the photoelectric conversion element 25.

[0036] During or after manufacturing the imaging device 12 configured as described above, the wirings 27-29, photoelectric conversion elements 25, and TFTs 26 provided on the substrate 20 may be inspected for defects. If a defect is detected as a result of the inspection, laser repair is performed by irradiating a laser beam near the defective portion of the substrate 20. For example, if a malfunction occurs in a specific photoelectric conversion element 25, laser light is irradiated onto a portion of the source electrode 26B of the TFT 26 to cut the source electrode 26B. In this manner, signals from the malfunctioning photoelectric conversion element 25 are no longer transmitted to the signal wiring 28, and therefore the signals are no longer detected by the signal detection circuit 23. Conventionally, when performing such laser repair, the laser beam is irradiated onto the second planarization film 35, which contains an organic insulating material, resulting in film defects in the second planarization film 35. If a film defect occurs in the second planarization film 35, moisture or the like may diffuse into the second planarization film 35 from the defect location. If moisture or the like diffuses into the second planarization film 35, there is a risk that the characteristics of the photoelectric conversion elements 25 that are not malfunctioning (i.e., are not subject to laser repair) may be deteriorated due to moisture or the like. Although the photoelectric conversion elements 25 are covered from the upper side by the third interlayer insulating film 34, the outer peripheral edge of the photoelectric conversion elements 25 has fine irregularities on the surface and a steep inclination, which results in poor coverage of the third interlayer insulating film 34. For this reason, there has been concern that moisture or the like diffused into the second planarization film 35 may penetrate into the photoelectric conversion elements 25.

[0037] Therefore, in this embodiment, a first opening 35A is provided in the second planarization film 35, overlapping a portion of the source electrode 26B, as shown in FIGS. 3, 4, and 7. As shown in FIGS. 4 and 7, the first opening 35A is provided so as to penetrate the second planarization film 35. The bottom surface at the edge of the opening is formed by the surface of the third interlayer insulating film 34, and the side surface at the edge of the opening is an inclined surface inclined with respect to the Z-axis direction (the normal direction to the main surface 20A of the substrate 20). As shown in FIG. 3, the first opening 35A is provided in a vertically elongated rectangular range in a plan view in the second planarization film 35. The first opening 35A extends along the Y-axis direction and is arranged so as to intersect with a first electrode portion 26B1, which is a portion of the source electrode 26B extending along the X-axis direction. The first opening 35A is provided over a wider area in the Y-axis direction than the first electrode portion 26B1, and includes a portion overlapping the first electrode portion 26B1, a portion offset to one side (upper side in FIG. 3 ) with respect to the first electrode portion 26B1 in the Y-axis direction, and a portion offset to the other side (lower side in FIG. 3 ) with respect to the first electrode portion 26B1 in the Y-axis direction. The first opening 35A is disposed between the signal wiring 28 and the photoelectric conversion element 25 in the X-axis direction. That is, the first opening 35A is disposed so as to overlap a portion of the first electrode portion 26B1 of the source electrode 26B that does not overlap with the photoelectric conversion element 25. With this configuration, when laser light is irradiated into the first opening 35A during laser repair, the laser light is irradiated onto the portion of the first electrode portion 26B1 of the source electrode 26B that does not overlap with the photoelectric conversion element 25. The laser light irradiated onto the source electrode 26B passes through the first opening 35A and is not irradiated onto the second planarization film 35. This prevents film defects from occurring in the second planarization film 35 due to irradiation with the laser light. Furthermore, since the laser light irradiated onto the source electrode 26B is prevented from irradiating the photoelectric conversion element 25, defects such as a short circuit between the source electrode 26B and the photoelectric conversion element 25 due to irradiation with the laser light are less likely to occur.

[0038] 4 and 7, the fourth interlayer insulating film 36 disposed above the second planarization film 35 includes a first covering portion 36A that covers the edge of the first opening 35A in the second planarization film 35. Specifically, the fourth interlayer insulating film 36 is disposed to cover substantially the entire second planarization film 35 from the upper layer side, and a portion of the fourth interlayer insulating film 36 constitutes the first covering portion 36A that covers the edge of the first opening 35A in the second planarization film 35. The first covering portion 36A is disposed to cover the entire bottom and side surfaces of the edge of the first opening 35A from the upper layer side, and has a bottomed cylindrical shape as a whole. The first covering portion 36A includes a first bottom portion 36A1 that covers the bottom surface of the edge of the first opening 35A and a first side portion 36A2 that covers the side surfaces of the edge of the first opening 35A. The first bottom 36A1 contacts the surface of the third interlayer insulating film 34. With this configuration, the region within the first opening 35A in the second planarization film 35, i.e., the range irradiated with laser light, can be surrounded by the first covering portion 36A. Therefore, even if moisture or the like penetrates into the region within the first opening 35A due to irradiation with laser light, the first covering portion 36A of the fourth interlayer insulating film 36 containing an inorganic insulating material can make it difficult for the moisture or the like to diffuse into the second planarization film 35. This makes it difficult for the characteristics of photoelectric conversion elements 25 that are not malfunctioning (not targeted for laser repair) to deteriorate. In this embodiment, the fourth interlayer insulating film 36 is made of SiN, an inorganic insulating material. x Since the second planarization film 35 is a single layer film, the first covering portion 36A can effectively prevent moisture and the like from diffusing into the second planarization film 35.

[0039] 4 and 7, the fifth interlayer insulating film 37 has a second covering portion 37A that covers the first covering portion 36A. Specifically, the fifth interlayer insulating film 37 is arranged to cover the fourth interlayer insulating film 36 and the structure made of the fifth metal film and the second transparent electrode film (such as the signal wiring 28 and the power supply wiring 29) from above, and a part of the fifth interlayer insulating film 37 constitutes the second covering portion 37A that covers the first covering portion 36A within the first opening 35A in the second planarizing film 35. The second covering portion 37A is arranged to cover the entire first covering portion 36A from above within the first opening 35A, and has a bottomed cylindrical shape as a whole. The second covering portion 37A has a second bottom portion 37A1 that covers the first bottom portion 36A1 of the first covering portion 36A and a second side portion 37A2 that covers the first side portion 36A2 of the first covering portion 36A. With this configuration, the area within the first opening 35A in the second planarization film 35, i.e., the area irradiated with laser light, can be doubly surrounded by the first covering portion 36A of the fourth interlayer insulating film 36 and the second covering portion 37A of the fifth interlayer insulating film 37. Therefore, even if moisture or the like infiltrates the area within the first opening 35A due to laser light irradiation, the first covering portion 36A and the second covering portion 37A of the fourth interlayer insulating film 36 and the fifth interlayer insulating film 37, each containing an inorganic insulating material, can further prevent the moisture or the like from diffusing into the second planarization film 35. In this embodiment, the fifth interlayer insulating film 37 is made of SiN, an inorganic insulating material. x Since the fifth interlayer insulating film 37 is a single-layer film, the second covering portion 37A can effectively prevent moisture and the like from diffusing into the second planarizing film 35. Furthermore, by covering the signal wiring 28 and the power supply wiring 29 from the upper layer side with the fifth interlayer insulating film 37, it is possible to make it difficult for moisture and the like to penetrate into the signal wiring 28 and the power supply wiring 29.

[0040] As shown in FIGS. 4 and 7 , the third planarization film 38 includes a first filling portion 38A that fills the first opening 35A. Specifically, the third planarization film 38 is disposed so as to cover substantially the entire fifth interlayer insulating film 37 from above, and a portion of the third planarization film 38 constitutes the first filling portion 38A that fills the first opening 35A in the second planarization film 35. Since the first filling portion 38A is part of the third planarization film 38, it covers the entire second covering portion 37A from above within the first opening 35A and flattens the recessed portion caused by the first opening 35A. During laser repair, the first filling portion 38A that fills the first opening 35A is irradiated with laser light. This can cause a film defect in the first filling portion 38A of the third planarization film 38, which is made of an organic insulating material, and moisture or the like may penetrate into the defect. Even in such a case, the first filling portion 38A is surrounded by the first covering portion 36A of the fourth interlayer insulating film 36 that covers the opening edge of the first opening 35A, so even if moisture or the like penetrates into the defective portion of the first filling portion 38A, it is difficult for the moisture or the like to diffuse into the second planarization film 35.

[0041] As described above, the imaging device 12 of this embodiment comprises a photoelectric conversion element (imaging element) 25, a source electrode 26B which is a first circuit element arranged below the photoelectric conversion element 25, a third interlayer insulating film (first insulating film) 34 which is arranged above the photoelectric conversion element 25, a second planarization film (second insulating film) 35 which is arranged above the third interlayer insulating film 34, and a fourth interlayer insulating film (third insulating film) 36 which is arranged above the second planarization film 35, wherein the third interlayer insulating film 34 and the fourth interlayer insulating film 36 each contain an inorganic insulating material, the second planarization film 35 contains an organic insulating material, and has a first opening 35A which overlaps a portion of the source electrode 26B which is the first circuit element, and the fourth interlayer insulating film 36 has a first covering portion 36A which covers the opening edge of the first opening 35A in the second planarization film 35.

[0042] The third interlayer insulating film 34 disposed above the photoelectric conversion element 25 contains an inorganic insulating material, which makes it difficult for moisture and other substances to penetrate into the photoelectric conversion element 25. When performing laser repair on a portion of the source electrode 26B, which is a first circuit element, laser light is irradiated onto the portion of the source electrode 26B, which is a first circuit element. If the laser light irradiation causes a film defect in the second planarization film 35, which contains an organic insulating material, there is a concern that moisture and other substances will diffuse into the second planarization film 35 from the defect location. In this regard, the second planarization film 35 has a first opening 35A that overlaps a portion of the source electrode 26B, which is a first circuit element. Therefore, the laser light irradiated onto the portion of the source electrode 26B, which is a first circuit element, passes through the first opening 35A of the second planarization film 35, thereby preventing film defects from occurring in the second planarization film 35. Furthermore, because the fourth interlayer insulating film 36 has the first covering portion 36A that covers the edge of the first opening 35A in the second planarization film 35, the area inside the first opening 35A, i.e., the area irradiated with laser light, can be surrounded by the first covering portion 36A of the fourth interlayer insulating film 36. Therefore, even if moisture or the like enters the area inside the first opening 35A due to irradiation with laser light, the first covering portion 36A of the fourth interlayer insulating film 36, which contains an inorganic insulating material, can prevent the moisture or the like from diffusing into the second planarization film 35. This makes it possible to prevent the characteristics of the photoelectric conversion element 25 from deteriorating.

[0043] The semiconductor device also includes signal wiring 28 and power supply wiring 29, which are second circuit elements, arranged above a fourth interlayer insulating film 36, and a fifth interlayer insulating film (fourth insulating film) 37, which is arranged above the signal wiring 28 and power supply wiring 29, which are second circuit elements. The fifth interlayer insulating film 37 contains an inorganic insulating material and has a second covering portion 37A that covers the first covering portion 36A. Because the fifth interlayer insulating film 37, which is arranged above the signal wiring 28 and power supply wiring 29, which are second circuit elements, contains an inorganic insulating material, it is possible to prevent moisture and the like from penetrating into the signal wiring 28 and power supply wiring 29, which are second circuit elements. The region within the first opening 35A in the second planarization film 35, i.e., the range irradiated with laser light, can be surrounded by the second covering portion 37A of the fifth interlayer insulating film 37 in addition to the first covering portion 36A of the fourth interlayer insulating film 36. Therefore, even if moisture or the like penetrates into the area within the first opening 35A due to irradiation with laser light, the first covering portion 36A and the second covering portion 37A of the fourth interlayer insulating film 36 and the fifth interlayer insulating film 37, which respectively contain inorganic insulating material, make it more difficult for the moisture or the like to diffuse into the second planarization film 35.

[0044] The semiconductor device also includes a third planarization film (fifth insulating film) 38 disposed above the fourth interlayer insulating film 36. The third planarization film 38 contains an organic insulating material and includes a first filling portion 38A that fills the first opening 35A. Since the first filling portion 38A of the third planarization film 38 fills the first opening 35A in the second planarization film 35, the first filling portion 38A is also irradiated with laser light when a portion of the source electrode 26B, which is the first circuit element, is irradiated with laser light. When the first filling portion 38A is irradiated with laser light, a film defect occurs in the first filling portion 38A, and moisture or the like may enter the defect. Even in such a case, the first filling portion 38A is surrounded by the first covering portion 36A of the fourth interlayer insulating film 36 that covers the opening edge of the first opening 35A, so even if moisture or the like penetrates into the defective portion of the first filling portion 38A, it is difficult for the moisture or the like to diffuse into the second planarization film 35.

[0045] Furthermore, the third interlayer insulating film 34 and the fourth interlayer insulating film 36 each contain silicon nitride as an inorganic insulating material. In this way, even if moisture or the like enters the region inside the first opening 35A due to irradiation with laser light, the first covering portion 36A of the fourth interlayer insulating film 36, which contains silicon nitride as an inorganic insulating material, makes it more difficult for the moisture or the like to diffuse into the second planarization film 35.

[0046] The TFT 26 is also provided below the photoelectric conversion element 25. The TFT 26 has a gate electrode 26A, a semiconductor portion 26D arranged overlapping the gate electrode 26A with a gap therebetween, a source electrode 26B connected to the semiconductor portion 26D, and a drain electrode 26C connected to the semiconductor portion 26D at a position spaced apart from the source electrode 26B. The photoelectric conversion element 25 is arranged overlapping the gate electrode 26A, the semiconductor portion 26D, and the drain electrode 26C without overlapping at least a portion of the source electrode 26B, and the source electrode 26B is the first circuit element. When a laser beam is irradiated onto a portion of the source electrode 26B, which is the first circuit element and does not overlap with the photoelectric conversion element 25, the source electrode 26B is disconnected, and the TFT 26 becomes inoperable. Since the photoelectric conversion element 25 does not overlap with the portion of the source electrode 26B that is irradiated with the laser light, it is less likely that a short circuit will occur between a part of the photoelectric conversion element 25 and the source electrode 26B due to irradiation with the laser light. Furthermore, since the photoelectric conversion element 25 is arranged to overlap with the gate electrode 26A, the semiconductor portion 26D, and the drain electrode 26C, the area of ​​the photoelectric conversion element 25 is larger than if it were arranged so as not to overlap with the TFT 26, and therefore the sensitivity related to imaging is increased.

[0047] <Embodiment 2> A second embodiment will be described with reference to Fig. 8 or 9. In this second embodiment, a case where the configuration of the first planarization film 132 is changed is shown. Note that a duplicated description of the structure, action, and effect similar to those of the first embodiment will be omitted.

[0048] 8 and 9, the first planarization film 132 according to this embodiment is provided with a second opening 132A that overlaps the first opening 135A. The second opening 132A is provided so as to penetrate the first planarization film 132. The bottom surface of the opening edge is formed by the surface of the first interlayer insulating film 131, and the side surface of the opening edge is an inclined surface that is inclined with respect to the Z-axis direction (the normal direction to the main surface 120A of the substrate 120). The formation area of ​​the second opening 132A in a plan view substantially coincides with the formation area of ​​the first opening 135A (see FIG. 3). That is, the second opening 132A intersects with the first electrode portion 126B1, which is a portion of the source electrode 126B extending along the X-axis direction, and is arranged to overlap with a portion of the first electrode portion 126B1 that does not overlap with the photoelectric conversion element 125. According to this configuration, during laser repair, when laser light is irradiated onto a portion of the first electrode portion 126B1 of the source electrode 126B that does not overlap with the photoelectric conversion element 125, the laser light passes through the first opening 135A and the second opening 132A, respectively, and is not irradiated onto the first planarization film 132 and the second planarization film 135. Therefore, film defects caused by the irradiation of the laser light to the first planarization film 132 and the second planarization film 135 are avoided.

[0049] 8 and 9, the fourth interlayer insulating film 136, which is disposed above the first planarization film 132, has a third covering portion 136B that covers the edge of the second opening 132A in the first planarization film 132. Specifically, the third covering portion 136B is continuous with the first covering portion 136A that covers the inside of the first opening 135A and covers the edge of the second opening 132A in the first planarization film 132. Similar to the first covering portion 136A, the third covering portion 136B has a bottomed cylindrical shape overall and includes a third bottom portion 136B1 that covers the bottom surface at the edge of the second opening 132A and a third side portion 136B2 that covers the side surface at the edge of the second opening 132A. Of these, the third side portion 136B2 is continuous with the first bottom portion 136A of the first covering portion 136A. With this configuration, the area inside the second opening 132A in the first planarization film 132, i.e., the range irradiated with laser light, can be surrounded by the third covering portion 136B. Therefore, even if moisture or the like penetrates into the area inside the second opening 132A due to irradiation with laser light, the third covering portion 136B of the fourth interlayer insulating film 136 containing an inorganic insulating material can make it difficult for the moisture or the like to diffuse into the first planarization film 132. This makes it difficult for the characteristics of the TFT 126 or the photoelectric conversion element 125 that is not malfunctioning (not targeted for laser repair) to deteriorate. In this embodiment, the fourth interlayer insulating film 136 is made of SiN, an inorganic insulating material. x Since the first planarization film 132 is a single layer film, the third covering portion 136B can effectively prevent moisture and the like from diffusing into the first planarization film 132.

[0050] 8 and 9, the third interlayer insulating film 134, which is disposed above the first planarization film 132 and below the fourth interlayer insulating film 136, has a fourth covering portion 134A that covers the edge of the second opening 132A in the first planarization film 132. More specifically, the third interlayer insulating film 134 is disposed so as to cover the second interlayer insulating film 133 and the photoelectric conversion element 125 from above, and a part of the third interlayer insulating film 134 constitutes the fourth covering portion 134A that covers the edge of the second opening 132A in the first planarization film 132. The fourth covering portion 134A of the third interlayer insulating film 134 is covered from above by the third covering portion 136B of the fourth interlayer insulating film 136. Like the third covering portion 136B, the fourth covering portion 134A has a bottomed cylindrical shape overall and includes a fourth bottom portion 134A1 disposed below the third bottom portion 136B1 and a fourth side portion 134A2 disposed below the third side portion 136B2. With this configuration, the area within the second opening 132A in the first planarization film 132, i.e., the area irradiated with laser light, can be doubly surrounded by the third covering portion 136B of the fourth interlayer insulating film 136 and the fourth covering portion 134A of the third interlayer insulating film 134. Therefore, even if moisture or the like infiltrates the area within the second opening 132A due to laser light irradiation, the third covering portion 136B and the fourth covering portion 134A of the fourth interlayer insulating film 136 and the third interlayer insulating film 134, each containing an inorganic insulating material, can further prevent the moisture or the like from diffusing into the first planarization film 132.

[0051] Furthermore, the fifth interlayer insulating film 137, which is disposed above the fourth interlayer insulating film 136 and below the third planarization film 138, has a fifth covering portion 137B that covers the third covering portion 136B, as shown in FIGS. 8 and 9. Specifically, the fifth covering portion 137B is continuous with the second covering portion 137A that covers the inside of the first opening 135A and covers the edge of the second opening 132A in the first planarization film 132. Like the second covering portion 137A, the fifth covering portion 137B has a bottomed cylindrical shape overall and includes a fifth bottom portion 137B1 that covers the bottom surface at the edge of the second opening 132A and a fifth side portion 137B2 that covers the side surface at the edge of the second opening 132A. Of these, the fifth side portion 137B2 is continuous with the second bottom portion 137A of the second covering portion 137A. With this configuration, the region within second opening 132A in first planarization film 132, i.e., the range irradiated with laser light, can be triple-surrounded by third covering portion 136B, fourth covering portion 134A, and fifth covering portion 137B of fifth interlayer insulating film 137. Therefore, even if moisture or the like infiltrates the region within second opening 132A due to irradiation with laser light, the third covering portion 136B, fourth covering portion 134A, and fifth covering portion 137B of fourth interlayer insulating film 136, third interlayer insulating film 134, and fifth interlayer insulating film 137, which each contain an inorganic insulating material, make it more unlikely that the moisture or the like will diffuse into first planarization film 132.

[0052] 8 and 9, the second interlayer insulating film 133, which is disposed above the first planarization film 132 and below the third interlayer insulating film 134, has a sixth covering portion 133A that covers the edge of the second opening 132A in the first planarization film 132. More specifically, the second interlayer insulating film 133 is disposed so as to cover the first planarization film 132 from above except for an area that overlaps with the fourth contact hole CH4, and a part of the second interlayer insulating film 133 constitutes the sixth covering portion 133A that covers the edge of the second opening 132A in the first planarization film 132. The sixth covering portion 133A is disposed so as to cover the entire bottom and side surfaces of the edge of the second opening 132A from above, and has a bottomed cylindrical shape as a whole. The sixth covering portion 133A has a sixth bottom portion 133A1 that covers the bottom surface at the opening edge of the second opening 132A and a sixth side portion 133A2 that covers the side surface at the opening edge of the second opening 132A. The sixth bottom portion 133A1 contacts the surface of the first interlayer insulating film 131. The sixth covering portion 133A of the second interlayer insulating film 133 is covered by the fourth covering portion 134A of the third interlayer insulating film 134. With this configuration, the region within the second opening 132A in the first planarization film 132, i.e., the range irradiated with laser light, can be surrounded fourfold by the third covering portion 136B, the fourth covering portion 134A, the fifth covering portion 137B, and the sixth covering portion 133A. Therefore, even if moisture or the like penetrates into the area within second opening 132A due to irradiation with laser light, the fourth interlayer insulating film 136, the third interlayer insulating film 134, the fifth interlayer insulating film 137, and the third covering portion 136B, the fourth covering portion 134A, the fifth covering portion 137B, and the sixth covering portion 133A of second interlayer insulating film 133, which each contain inorganic insulating material, make it more unlikely that the moisture or the like will diffuse into first planarization film 132.

[0053] 8 and 9, the third planarization film 138 includes a first filling portion 138A that fills the first opening 135A, and a second filling portion 138B that fills the second opening 132A. Specifically, the second filling portion 138B is continuous with the bottom surface of the first filling portion 138A that fills the first opening 135A, protrudes from the first filling portion 138A toward the back side, and fills the second opening 132A in the first planarization film 132. The second filling portion 138B is part of the third planarization film 138, and therefore covers the entire area of ​​the fifth covering portion 137B from above in the second opening 132A and planarizes the recessed portion caused by the second opening 132A. During laser repair, laser light is irradiated onto first filling portion 138A, which fills first opening 135A, and second filling portion 138B, which fills second opening 132A. This can cause film defects in first filling portion 138A and second filling portion 138B of third planarization film 138, which is made of an organic insulating material, and moisture or the like can infiltrate the defects. Even in such a case, first filling portion 138A is surrounded by first covering portion 136A of fourth interlayer insulating film 136, which covers the edge of first opening 135A. Therefore, even if moisture or the like infiltrates the defects in first filling portion 138A, the moisture or the like is less likely to diffuse into second planarization film 135. Similarly, since the second filling portion 138B is surrounded by the third covering portion 136B of the fourth interlayer insulating film 136 that covers the opening edge of the second opening 132A, even if moisture or the like penetrates into the defective portion of the second filling portion 138B, it is difficult for the moisture or the like to diffuse into the first planarization film 132.

[0054] As described above, this embodiment includes a TFT (switching element) 126 disposed below the photoelectric conversion element 125, and a first planarization film (sixth insulating film) 132 disposed above the TFT 126 and below the photoelectric conversion element 125, the TFT 126 including a source electrode 126B serving as a first circuit element, the first planarization film 132 including an organic insulating material and having a second opening 132A overlapping the first opening 135A, and the fourth interlayer insulating film 136 having a third covering portion 136B covering an edge of the second opening 132A in the first planarization film 132. The TFT 126 can be rendered inoperable by irradiating a portion of the source electrode 126B serving as the first circuit element with laser light. First planarization film 132, which is disposed above TFT 126 and below photoelectric conversion element 125, has second opening 132A that overlaps first opening 135A. Therefore, laser light irradiated onto a portion of source electrode 126B, which is the first circuit element, passes through second opening 132A in first planarization film 132, thereby preventing film defects in first planarization film 132. Furthermore, fourth interlayer insulating film 136 has third covering portion 136B that covers the edge of second opening 132A in first planarization film 132. Therefore, the area within second opening 132A, i.e., the range irradiated with laser light, can be surrounded by third covering portion 136B of fourth interlayer insulating film 136. Therefore, even if moisture or the like enters the region inside second opening 132A due to irradiation with laser light, third covering portion 136B of fourth interlayer insulating film 136 containing an inorganic insulating material can make it difficult for the moisture or the like to diffuse into first planarization film 132. This makes it difficult for the characteristics of TFT 126 to deteriorate.

[0055] Furthermore, the third interlayer insulating film 134 has a fourth covering portion 134A that covers the edge of the second opening 132A in the first planarization film 132, and the third covering portion 136B covers the fourth covering portion 134A. In this manner, the region within the second opening 132A in the first planarization film 132, i.e., the range irradiated with laser light, can be surrounded by the fourth covering portion 134A of the third interlayer insulating film 134 in addition to the third covering portion 136B of the fourth interlayer insulating film 136. Therefore, even if moisture or the like enters the region within the second opening 132A due to irradiation with laser light, the third covering portion 136B and the fourth covering portion 134A of the fourth interlayer insulating film 136 and the third interlayer insulating film 134, which each contain an inorganic insulating material, make it more difficult for the moisture or the like to diffuse into the first planarization film 132.

[0056] The semiconductor device also includes signal wiring 128 and power supply wiring 129, which are second circuit elements, arranged above fourth interlayer insulating film 136, and fifth interlayer insulating film 137, which is arranged above signal wiring 128 and power supply wiring 129, which are second circuit elements. Fifth interlayer insulating film 137 contains an inorganic insulating material and has fifth covering portion 137B that covers third covering portion 136B. Because fifth interlayer insulating film 137, which is arranged above signal wiring 128 and power supply wiring 129, which are second circuit elements, contains an inorganic insulating material, it is possible to prevent moisture and the like from penetrating into signal wiring 128 and power supply wiring 129, which are second circuit elements. Furthermore, the region within second opening 132A in first planarization film 132, i.e., the range irradiated with laser light, can be surrounded by fifth covering portion 137B of fifth interlayer insulating film 137 in addition to third covering portion 136B of fourth interlayer insulating film 136. Therefore, even if moisture or the like penetrates into the area within the second opening 132A due to irradiation with laser light, the third covering portion 136B and the fifth covering portion 137B of the fourth interlayer insulating film 136 and the fifth interlayer insulating film 137, which respectively contain inorganic insulating material, make it less likely that the moisture or the like will diffuse into the first planarization film 132.

[0057] The semiconductor device also includes a second interlayer insulating film (seventh insulating film) 133 disposed above the first planarization film 132. The second interlayer insulating film 133 contains an inorganic insulating material and has a sixth covering portion 133A that covers the edge of the second opening 132A in the first planarization film 132. In this manner, the region within the second opening 132A in the first planarization film 132, i.e., the range irradiated with the laser light, can be surrounded by the sixth covering portion 133A of the second interlayer insulating film 133 in addition to the third covering portion 136B of the fourth interlayer insulating film 136. Therefore, even if moisture or the like infiltrates the region within the second opening 132A due to the irradiation with the laser light, the third covering portion 136B and the sixth covering portion 133A of the fourth interlayer insulating film 136 and the second interlayer insulating film 133, each containing an inorganic insulating material, make it more difficult for the moisture or the like to diffuse into the first planarization film 132.

[0058] The semiconductor device also includes a third planarization film 138 disposed above the fourth interlayer insulating film 136. The third planarization film 138 contains an organic insulating material and includes a first filling portion 138A that fills the first opening 135A and a second filling portion 138B that fills the second opening 132A. Since the first filling portion 138A fills the first opening 135A in the second planarization film 135 and the second filling portion 138B fills the second opening 132A in the first planarization film 132, when a laser beam is irradiated onto a portion of the source electrode 126B that is the first circuit element, the first filling portion 138A and the second filling portion 138B are also irradiated with the laser beam. When the first filling portion 138A and the second filling portion 138B are irradiated with laser light, film defects occur in the first filling portion 138A and the second filling portion 138B, respectively, and there is a risk that moisture or the like may penetrate into the defect. Even in such a case, because the first filling portion 138A is surrounded by the first covering portion 136A of the fourth interlayer insulating film 136 that covers the opening edge of the first opening 135A, even if moisture or the like penetrates into the defect portion of the first filling portion 138A, the moisture or the like is less likely to diffuse into the second planarization film 135. Similarly, because the second filling portion 138B is surrounded by the third covering portion 136B of the fourth interlayer insulating film 136 that covers the opening edge of the second opening 132A, even if moisture or the like penetrates into the defect portion of the second filling portion 138B, the moisture or the like is less likely to diffuse into the first planarization film 132.

[0059] <Embodiment 3> 10 to 14, the third embodiment will be described. In the third embodiment, the formation range of the photoelectric conversion element 225, the configuration of the power supply wiring 229, etc. are changed from the first embodiment, and the first planarization film 32 is omitted. Note that a redundant description of the structure, action, and effect similar to those of the first embodiment will be omitted.

[0060] 10 and 11, in the photoelectric conversion element 225 according to this embodiment, at least the second lower electrode 25A2, the photoelectric conversion layer 225B, and the upper electrode 225C are arranged so as not to overlap with the TFT 226. More specifically, among the lower electrodes 225A constituting the photoelectric conversion element 225, the first lower electrode 225A1 extends further than the second lower electrode 225A2, the photoelectric conversion layer 225B, and the upper electrode 225C, and the extended portion is arranged so as to overlap with the other end (right side in FIGS. 10 and 11) of the drain electrode 226C of the TFT 226. The first lower electrode 225A1 is arranged so as not to overlap with the portion of the drain electrode 226C connected to the semiconductor portion 226D and the portion adjacent thereto. In this embodiment, the first planarization film 32 (see FIG. 4) described in the first embodiment is omitted, and therefore the first lower electrode 225A1 is disposed on the first interlayer insulating film 231, and the first interlayer insulating film 231 is interposed between the first lower electrode 225A1 and the drain electrode 226C. Therefore, a fifth contact hole CH5 for connecting the first lower electrode 225A1 and the drain electrode 226C is opened only in the first interlayer insulating film 231. In addition, in this embodiment, the first planarization film 32 is omitted, and therefore the intermediate electrode 140 is disposed on the first interlayer insulating film 231, and the first interlayer insulating film 231 is interposed between the intermediate electrode 240 and the second electrode portion 226B2 of the source electrode 226B, as shown in FIG. Therefore, the second contact hole CH2 for connecting the intermediate electrode 240 and the second electrode portion 226B2 of the source electrode 226B is provided so as to open only in the first interlayer insulating film 231.

[0061] 10 and 11, the power supply wiring 229 has a second widened portion 229B in addition to a first widened portion 229A. The second widened portion 229B of the power supply wiring 229 is disposed so as to overlap a main portion of the TFT 226 (including at least the entire area of ​​the gate electrode 226A and the semiconductor portion 226D). The first widened portion 229A of the power supply wiring 229 is connected to the upper electrode 225C of the photoelectric conversion element 225 through a sixth contact hole CH6 provided in the third interlayer insulating film 234, the second planarization film 235, and the fourth interlayer insulating film 236, as shown in FIG.

[0062] 10 , similarly to the first embodiment, the first opening 235A provided in the second planarization film 235 extends along the Y-axis direction and intersects with the first electrode portion 226B1, which is a portion of the source electrode 226B extending along the X-axis direction. In this embodiment, the source electrode 226B is arranged so as not to overlap with the photoelectric conversion element 225 over its entire area, and therefore the first opening 235A overlapping with a portion of the first electrode portion 226B1 does not overlap with the photoelectric conversion element 225 over its entire area. Therefore, when laser repair is performed, if laser light is irradiated into the first opening 235A, the laser light is irradiated onto a portion of the first electrode portion 226B1 of the source electrode 226B without irradiating the photoelectric conversion element 225.

[0063] As shown in FIGS. 11 and 14 , the first covering portion 236A of the fourth interlayer insulating film 236 is disposed so as to cover the entire bottom and side surfaces of the opening edge of the first opening 235A configured as described above from the upper layer side. In this embodiment, as in the first embodiment, the area within the first opening 235A in the second planarization film 235, i.e., the area irradiated with laser light, can be surrounded by the first covering portion 236A. Therefore, even if moisture or the like enters the area within the first opening 235A due to irradiation with laser light, the first covering portion 236A can prevent the moisture or the like from diffusing into the second planarization film 235. This can prevent the characteristics of the photoelectric conversion element 225 from deteriorating.

[0064] <Other embodiments> The technology disclosed in this specification is not limited to the embodiments described above and illustrated in the drawings, and the following embodiments, for example, are also included in the technical scope.

[0065] (1) The object to be irradiated with laser light during laser repair may be a structure other than the source electrodes 26B, 126B, and 226B. For example, it is also possible to irradiate the scanning wiring 27 with laser light. In this case, the first openings 35A, 135A, and 235A may be provided at positions overlapping the portions of the scanning wiring 27 to be irradiated with laser light. When there is a possibility that laser light may be irradiated to both the source electrodes 26B, 126B, and 226B and the scanning wiring 27, the first openings 35A, 135A, and 235A may be provided at positions overlapping portions of the source electrodes 26B, 126B, and 226B and at positions overlapping portions of the scanning wiring 27. Since the scanning wiring 27 does not overlap with the photoelectric conversion elements 25, 125, and 225, even if a laser beam is irradiated onto a part of the scanning wiring 27, the scanning wiring 27 and the photoelectric conversion elements 25, 125, and 225 are unlikely to be short-circuited.

[0066] (2) In the configuration described in the second embodiment, as in (1) above, the first opening 135A and the second opening 132A can also be provided at a position that overlaps the portion of the scanning wiring 27 that is irradiated with the laser light.

[0067] (3) In the configuration described in the third embodiment, for example, it is possible to irradiate the drain electrode 226C with laser light. In this case, the first opening 235A may be provided at a position overlapping a portion of the drain electrode 226C that is irradiated with laser light. When there is a possibility that laser light may be irradiated to both the source electrode 226B and the drain electrode 226C, the first opening 235A may be provided at a position overlapping a portion of the source electrode 226B and a position overlapping a portion of the drain electrode 226C. Note that, because the drain electrode 226C does not overlap with the photoelectric conversion element 225, irradiating a portion of the drain electrode 226C with laser light makes it unlikely that a short circuit will occur between the drain electrode 226C and the photoelectric conversion element 225.

[0068] (4) In the configuration described in the first embodiment, as in (3) above, the first opening 35A can be provided at a position overlapping the portion of the drain electrode 26C that is irradiated with laser light. In this case, it is preferable to arrange the photoelectric conversion element 25 so as not to overlap the portion of the drain electrode 26C that is irradiated with laser light.

[0069] (5) In the configuration described in embodiment 2, as in (3) above, the first opening 135A and the second opening 132A can be provided at positions overlapping the portion of the drain electrode 26C that is irradiated with laser light. In this case, it is preferable to arrange the photoelectric conversion element 125 so as not to overlap the portion of the drain electrode 26C that is irradiated with laser light.

[0070] (6) The specific materials, film thicknesses, and film configurations used for each metal film, each insulating film 30-38, 131-138, 231, 234, 235, 236, each semiconductor film, each transparent electrode film, etc. can be changed as appropriate. For example, the gate insulating film 30 may be a single-layer film. The first interlayer insulating film 31, 131, the second interlayer insulating film 33, 133, the third interlayer insulating film 34, 134, 234, the fourth interlayer insulating film 36, 136, 236, and the fifth interlayer insulating film 37, 137 may be stacked films. Even in this case, the third interlayer insulating film 34, 134, 234, the fourth interlayer insulating film 36, 136, 236, and the fifth interlayer insulating film 37, 137, in particular, may contain SiN in the stacked film. x Preferably, the membrane comprises:

[0071] (7) The planar shape of the imaging area IA may be a square, a vertically elongated rectangle, or the like, and may be changed as appropriate.

[0072] (8) The scanning signal control circuit 22 and the signal detection circuit 23 may be provided in the non-imaging area NIA of the substrate 20.

[0073] (9) It is also possible to use an irradiation device that irradiates visible light instead of the radiation irradiation device 11. In that case, the scintillator 39 can be omitted.

[0074] (10) The subject 1 may be an animal other than a human, or may be an object other than an animal (such as a suitcase).

[0075] (11) The imaging device 12 may include imaging elements other than the photoelectric conversion elements 25, 125, and 225.

[0076] (12) The imaging device 12 may be used in an imaging system other than the radiation image imaging system 10. [Explanation of symbols]

[0077] 12...imaging device, 25,125,225...photoelectric conversion element (imaging element), 26,126,226...TFT (switching element), 26A,226A...gate electrode, 26B,126B,226B...source electrode (first circuit element), 26C,226C...drain electrode, 26D,226D...semiconductor portion, 28,128...signal wiring (second circuit element), 29,129,229...power supply wiring (second circuit element), 32,132...first planarization film (sixth insulating film), 33,133...second interlayer insulating film (seventh insulating film), 34,134,234...third interlayer insulating film ( 132A...second opening, 133A...sixth covering portion, 134A...fourth covering portion, 136B...third covering portion, 137B...fifth covering portion, 138B...second filling portion.

Claims

1. An imaging element; a first circuit element disposed below the imaging element; a first insulating film disposed on an upper layer side of the imaging element; a second insulating film disposed on an upper layer side of the first insulating film; a third insulating film disposed on an upper layer side of the second insulating film, the first insulating film and the third insulating film each contain an inorganic insulating material; the second insulating film includes an organic insulating material and has a first opening that overlaps a portion of the first circuit element; The third insulating film has a first covering portion that covers an opening edge of the first opening in the second insulating film.

2. a second circuit element disposed on an upper layer side of the third insulating film; a fourth insulating film disposed on an upper layer side of the second circuit element, The imaging device according to claim 1 , wherein the fourth insulating film includes an inorganic insulating material and has a second covering portion that covers the first covering portion.

3. a fifth insulating film disposed above the third insulating film; 3. The imaging device according to claim 1, wherein the fifth insulating film includes a first filling portion that contains an organic insulating material and that fills the first opening.

4. 3. The imaging device according to claim 1, wherein the first insulating film and the third insulating film each contain silicon nitride as an inorganic insulating material.

5. a switching element disposed below the imaging element; a sixth insulating film disposed above the switching element and below the imaging element, the switching element includes the first circuit element or is connected to the first circuit element; the sixth insulating film includes an organic insulating material and has a second opening overlapping the first opening; 3. The imaging device according to claim 1, wherein the third insulating film has a third covering portion that covers an opening edge of the second opening in the sixth insulating film.

6. the first insulating film has a fourth covering portion that covers an opening edge of the second opening in the sixth insulating film, The imaging device according to claim 5 , wherein the third covering portion covers the fourth covering portion.

7. a second circuit element disposed on an upper layer side of the third insulating film; a fourth insulating film disposed on an upper layer side of the second circuit element, The imaging device according to claim 5 , wherein the fourth insulating film includes an inorganic insulating material and has a fifth covering portion that covers the third covering portion.

8. a seventh insulating film disposed above the sixth insulating film; 6. The imaging device according to claim 5, wherein the seventh insulating film includes an inorganic insulating material and has a sixth covering portion that covers an opening edge of the second opening in the sixth insulating film.

9. a fifth insulating film disposed above the third insulating film; 6. The imaging device according to claim 5, wherein the fifth insulating film includes an organic insulating material and includes a first filling portion that fills the first opening and a second filling portion that fills the second opening.

10. a switching element disposed below the imaging element, the switching element includes a gate electrode, a semiconductor portion arranged to overlap the gate electrode with a gap therebetween, a source electrode connected to the semiconductor portion, and a drain electrode connected to the semiconductor portion at a position spaced apart from the source electrode; the imaging element is arranged not to overlap with at least a part of the source electrode but to overlap with the gate electrode, the semiconductor portion, and the drain electrode; 3. The imaging device according to claim 1, wherein the first circuit element is the source electrode.

Images