Processing method for organic semiconductor layer, processing method for el layer, processing method for organic semiconductor device, and manufacturing method for organic semiconductor device

Abstract

To provide an organic semiconductor device with excellent characteristics, that is manufactured through a photolithography step including a step of forming an aluminum oxide film and a metal film on an organic semiconductor film.SOLUTION: A processing method for an organic semiconductor layer whose tensile stress of a metal film is 1200 MPa or more and 1500 MPa or less includes forming a protection film including an organic metal compound expressed by General Formula (G1) below between an organic semiconductor film and aluminum oxide. In General Formula (G1), Ar represents an aryl group with 6 to 30 carbons or a hetero aryl group with 1 to 30 carbons, X represents oxygen or sulfur, M represents metal, n represents an integer of 1 to 5, and the valence of the metal M is the same as n.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to an organic compound, an organic EL device, a display module, a lighting module, a display device, a light-emitting device, an electronic device, a lighting device, and an electronic device. Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification etc. relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specific examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, memory devices, imaging devices, driving methods thereof, and manufacturing methods thereof. [Background technology]

[0002] Organic EL devices (OLED devices) that utilize electroluminescence (EL) using organic compounds are becoming more and more practical. The basic structure of these OLED devices is a pair of electrodes sandwiching an organic compound layer (EL layer) containing a light-emitting material between them. By applying a voltage to this device, carriers are injected, and the recombination energy of these carriers is utilized to emit light from the light-emitting material.

[0003] Because such organic EL devices are self-luminous, when used as display pixels, they offer advantages such as higher visibility and no need for backlighting compared to liquid crystal displays, making them particularly suitable for flat panel displays. Another major advantage of displays using such organic EL devices is that they can be fabricated to be thin and lightweight. Another feature is their extremely fast response time.

[0004] Furthermore, these organic EL devices can emit light continuously in two dimensions, making it possible to obtain surface light emission. This is a feature that is difficult to obtain with point light sources such as incandescent bulbs and LEDs, or linear light sources such as fluorescent lamps, making them highly useful as surface light sources for lighting applications.

[0005] Thus, light-emitting devices using organic EL devices are suitable for a variety of electronic devices, but research and development is ongoing to find organic EL devices with even better characteristics.

[0006] In order to obtain a light-emitting device with higher resolution using an organic EL device, research is being conducted into patterning of organic layers by photolithography using photoresist, etc., instead of vapor deposition using a metal mask. By using photolithography, a high-resolution light-emitting device with an EL layer spacing of several μm can be obtained (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Special Publication No. 2018-521459 Summary of the Invention [Problem to be solved by the invention]

[0008] When patterning an organic semiconductor layer by photolithography, there is a method in which an aluminum oxide film is formed as a protective film for the organic semiconductor film, and then a metal film or metal compound film is formed as a hard mask. The presence of the aluminum oxide film can reduce damage to the organic semiconductor film when forming the hard mask, and therefore it is possible to suppress deterioration of the properties of the organic semiconductor film. The aluminum oxide film is suitable as a protective film for the organic semiconductor film because it is unlikely to cause significant damage to the organic semiconductor film during both deposition and removal.

[0009] However, hard masks are often formed by deposition methods such as sputtering, which can cause relatively large damage to underlying layers, and therefore, even if an aluminum oxide film is present, the organic semiconductor film may be damaged to some extent. In sputtering, it is possible to reduce damage to underlying layers by increasing the pressure in the chamber during deposition. However, films formed under high pressure during deposition can experience large tensile stresses, which can lead to peeling.

[0010] Therefore, one embodiment of the present invention aims to provide an organic semiconductor device with good characteristics that includes a step of forming an aluminum oxide film and a hard mask made of a metal film or a metal compound film on an organic semiconductor film, or an organic semiconductor device with good yield that includes a step of forming an aluminum oxide film on an organic semiconductor film and then forming a hard mask layer made of a metal film or a metal compound film. [Means for solving the problem]

[0011] Therefore, one embodiment of the present invention is a method for processing an organic semiconductor layer, comprising the steps of: forming an organic semiconductor film on a first electrode; forming a protective film on the organic semiconductor film, the protective film including an organometallic compound represented by the following general formula (G1); forming a first aluminum oxide film on the protective film; forming a metal film or metal compound film having a tensile stress of 1200 MPa or more and 1500 MPa or less on the first aluminum oxide film; removing a part or all of the metal film or metal compound film; and removing a part or all of the protective film and a part or all of the first aluminum oxide film.

[0012] [ka]

[0013] In general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, n represents an integer of 1 to 5, and n is the same as the valence of the metal M. When n is 2 or more, multiple Ar may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group and the metal M may form a coordinate bond.

[0014] Another embodiment of the present invention is a method for processing an organic semiconductor layer having any of the above structures, wherein the metal film or metal compound film is formed by a sputtering method.

[0015] Another embodiment of the present invention is a method for processing an organic semiconductor layer having the above structure, wherein water or a liquid containing water as a solvent is used in the step of removing all or part of the protective film and all or part of the first aluminum oxide film.

[0016] Another embodiment of the present invention is a method for processing an organic semiconductor layer having the above structure, wherein the aluminum oxide film is formed by atomic deposition.

[0017] Another embodiment of the present invention is a method for processing an organic semiconductor layer having the above structure, in which the protective film is formed by a vacuum deposition method.

[0018] Another embodiment of the present invention is a method for processing an organic semiconductor layer having the above structure, wherein the organometallic compound represented by General Formula (G1) is an organometallic compound represented by General Formula (G2):

[0019] [ka]

[0020] In general formula (G2), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, M represents a metal, n represents an integer of 1 to 3, and n is the same as the valence of the metal M. When n is 2 or more, the multiple Ar may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group may be coordinately bonded to the metal M.

[0021] Another embodiment of the present invention is a method for processing an EL layer having the above structure, in which the organic semiconductor film is an EL film.

[0022] Alternatively, another embodiment of the present invention provides a semiconductor device including a first electrode, a protective film including an organometallic compound represented by the following general formula (G1) on the organic semiconductor film, a first aluminum oxide film on the protective film, a metal film or a metal compound film having a tensile stress of 1200 MPa to 1500 MPa on the first aluminum oxide film, a photomask on the metal film or the metal compound film, a photomask on the metal film or the metal compound film, a photomask on the metal film or the metal compound film, and a photomask on the metal film or the metal compound film. a step of etching the first aluminum oxide film, the protective layer, and the organic semiconductor film using the metal layer or metal compound layer as a mask to form an aluminum oxide layer, a protective layer, and an organic semiconductor layer; a step of removing the metal layer or metal compound layer; a step of forming an organic resin film covering the first electrode, the organic semiconductor layer, the protective layer, and the first aluminum oxide layer; a step of forming an opening in the organic resin film so as to overlap the first electrode, the organic semiconductor layer, the protective layer, and the first aluminum oxide layer; and a step of removing the protective layer and the first aluminum oxide layer that overlap the opening.

[0023] [ka]

[0024] In general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, n represents an integer of 1 to 5, and n is the same as the valence of the metal M. When n is 2 or more, multiple Ar may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group and the metal M may form a coordinate bond.

[0025] Another embodiment of the present invention is a method for processing an organic semiconductor device having the above structure, in which the metal film or metal compound film is formed by a sputtering method.

[0026] Another embodiment of the present invention is a method for manufacturing an organic semiconductor device having the above structure, wherein water or a liquid containing water as a solvent is used in the step of removing the protective film and the first aluminum oxide layer that overlap with the opening.

[0027] Another embodiment of the present invention is a method for manufacturing an organic semiconductor device having the above structure, wherein the organometallic compound represented by General Formula (G1) is an organometallic compound represented by General Formula (G2):

[0028] [ka]

[0029] In general formula (G2), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, M represents a metal, n represents an integer of 1 to 3, and n is the same as the valence of the metal M. When n is 2 or more, the multiple Ar may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group may be coordinately bonded to the metal M.

[0030] Another embodiment of the present invention is a method for manufacturing an organic semiconductor device having the above structure, wherein the first aluminum oxide film is formed by atomic layer deposition.

[0031] Another embodiment of the present invention is a method for manufacturing an organic semiconductor device having any of the above structures, wherein the protective film is formed by a vacuum evaporation method.

[0032] Another embodiment of the present invention is a method for manufacturing an organic semiconductor device having any of the above structures, in which the organic semiconductor layer includes a photoelectric conversion layer.

[0033] Another embodiment of the present invention is a method for manufacturing an organic semiconductor device having any of the above structures, in which the organic semiconductor layer is an EL layer.

[0034] Another embodiment of the present invention is a method for manufacturing an organic EL device having the above structure, wherein the organic semiconductor film is an EL film.

[0035] Another embodiment of the present invention is a method for manufacturing an organic EL device having the above structure, wherein the EL layer has a stacked structure including a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer in this order from the first electrode side.

[0036] In this specification, the term "light-emitting device" includes an image display device using an organic EL device. The term "light-emitting device" may also include a module in which a connector, such as an anisotropic conductive film or TCP (Tape Carrier Package), is attached to an organic EL device, a module in which a printed wiring board is provided at the end of the TCP, or a module in which an IC (integrated circuit) is directly mounted on an organic EL device using a COG (Chip On Glass) method. Furthermore, lighting fixtures and the like may include a light-emitting device. [Effects of the Invention]

[0037] In one embodiment of the present invention, an organic semiconductor device having good characteristics can be provided, which includes a step of forming an aluminum oxide film and a hard mask made of a metal film or a metal compound film on an organic semiconductor film, or an organic semiconductor device having a good yield can be provided, which includes a step of forming an aluminum oxide film in contact with an organic semiconductor film and then forming a hard mask made of a metal film or a metal compound film.

[0038] Note that the description of this effect does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0039] [Figure 1] 1(A) and 1(B) are diagrams illustrating one embodiment of the present invention. [Figure 2] 2(A) to 2(C) are diagrams showing a conventional configuration. [Figure 3] 3(A) to 3(E) are diagrams showing a film processing method. [Figure 4] 4(A) to 4(E) are diagrams showing a film processing method. [Figure 5] 5(A) to 5(C) are diagrams showing an organic semiconductor device. [Figure 6] 6A and 6B illustrate a display device according to one embodiment of the present invention. [Figure 7] 7A to 7E are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 8] 8A and 8B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 9] 9A to 9D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 10] 10A to 10C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 11] 11A to 11C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 12] 12A to 12C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 13] 13A and 13B are perspective views showing configuration examples of a display module. [Figure 14] 14(A) and 14(B) are cross-sectional views showing examples of the configuration of a display device. [Figure 15] FIG. 15 is a perspective view showing an example of the configuration of a display device. [Figure 16] FIG. 16 is a cross-sectional view showing an example of the configuration of a display device. [Figure 17] FIG. 17 is a cross-sectional view showing an example of the configuration of a display device. [Figure 18] FIG. 18 is a cross-sectional view showing an example of the configuration of a display device. [Figure 19] FIG. 19 is a cross-sectional view showing an example of the configuration of a display device. [Figure 20] FIG. 20 is a cross-sectional view showing an example of the configuration of a display device. [Figure 21] FIG. 21 is a diagram illustrating an example of a wearable device. [Figure 22] 22(A) and 22(F) are diagrams showing examples of electronic devices. [Figure 23] 23A to 23G are diagrams showing examples of electronic devices. [Figure 24] FIG. 24 is a diagram showing an organic EL device. DETAILED DESCRIPTION OF THE INVENTION

[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0041] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0042] Furthermore, in this specification and the like, a film that has not undergone shape processing after deposition is generally referred to as a "film," and a film that has undergone shape processing is generally referred to as a "layer." However, these terms are used solely for the purpose of making it easier to understand the progress of the process, and there is no significant difference between them, so "film" can be read as a "layer" and "layer" as a "film." In particular, when describing a film that has not undergone a processing step, both terms are considered to have the same meaning.

[0043] (Embodiment 1) One widely used method for fabricating organic semiconductor films in a specified shape is vacuum deposition using a metal mask (mask deposition). However, with the recent trend toward higher density and finer definition, mask deposition is reaching its limit in terms of further finer definition due to various reasons, including issues with alignment accuracy and spacing with the substrate. On the other hand, photolithography can be used to process the shape of organic semiconductor films, allowing for the formation of more precise patterns. Furthermore, because photolithography can easily be used to fabricate large-area films, research into the processing of organic semiconductor films using photolithography is also underway.

[0044] However, in order to process the shape of an organic semiconductor film using photolithography, many problems must be overcome, such as the effect of exposure of the organic semiconductor film to the atmosphere, the effect of light irradiation when exposing a photosensitive resin, the effect of the developer to which the exposed photosensitive resin is exposed when developing it, and the effect of forming a metal film when a metal film is formed to reduce the effect of the developer.

[0045] These effects are considered problematic because they can cause situations such as the organic semiconductor film itself disappearing or the surface of the organic semiconductor film being damaged, resulting in a significant deterioration in the characteristics of devices subsequently fabricated.

[0046] One way to solve the above-mentioned problems is to provide an aluminum oxide film 453 as a protective film on the organic semiconductor film 451, as shown in Figure 2(A), and then perform the above-mentioned problematic process. The aluminum oxide film can be formed as a dense film and has a high ability to block liquids and gases, making it possible to suppress the adverse effects of the above-mentioned process. Furthermore, the aluminum oxide film can be formed and removed using a method that causes little damage to the organic semiconductor film, making it extremely suitable as a protective film for the organic semiconductor film 451.

[0047] As a method for forming the aluminum oxide film, atomic layer deposition (ALD) is preferred because it allows the formation of a denser film and causes less damage to the organic semiconductor film.

[0048] As described above, the aluminum oxide film is a film that inflicts relatively little damage on the organic semiconductor film during its formation and removal, and therefore can be suitably used as a protective film when processing the organic semiconductor film by photolithography. By forming a hard mask using another metal on this aluminum oxide film, it becomes possible to process the organic semiconductor film by photolithography while reducing damage caused by the formation and processing of the hard mask.

[0049] However, because aluminum oxide films are inorganic and because the deposition conditions are mild, especially when formed using the ALD method, they have poor adhesion to organic semiconductor films, which can lead to peeling during processing. This peeling is particularly affected by the stress of the metal film (hard mask) formed on the aluminum oxide film. In other words, peeling is accelerated by increased stress in the hard mask.

[0050] Here, the metal film (hard mask) is formed by a film formation method (e.g., sputtering, chemical vapor deposition, vacuum evaporation, pulsed laser deposition, etc.) that causes more damage to the underlying layer than the ALD method used to form the aluminum oxide film. In one embodiment of the present invention, the underlying layer of the hard mask is an aluminum oxide film instead of an organic semiconductor film, which reduces damage to the organic semiconductor film during the formation of the metal film (hard mask), but it is desirable to further reduce the impact.

[0051] In sputtering, increasing the pressure in the chamber during film formation reduces the energy of metal particles ejected from the target as they collide with molecules in the atmosphere, thereby reducing damage to the underlying film during film formation. Therefore, when forming a metal film (hard mask) by sputtering, it is preferable to increase the pressure in the chamber during film formation.

[0052] However, metal films deposited in regions where the chamber pressure is high during deposition have high tensile stress. Therefore, forming a hard mask in a region where the chamber pressure is high during deposition can cause peeling between the organic semiconductor film and the aluminum oxide film. For example, if the tensile stress of the metal film (hard mask) exceeds 1200 MPa, peeling can occur, making subsequent processes difficult.

[0053] Therefore, in one embodiment of the present invention, a film (protective film) 452 containing an organometallic compound having a specific structure is formed between an organic semiconductor film 451 and an aluminum oxide film 453 as shown in FIG.

[0054] As such an organometallic compound, it is preferable to use an organometallic compound represented by the following general formula (G1).

[0055] [ka]

[0056] In general formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, n represents an integer of 1 to 5, and n is the same as the valence of the metal M. When n is 2 or more, multiple Ar may be the same or different, and X may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group and the metal M may form a coordinate bond.

[0057] By providing a film (protective film) containing the organometallic compound represented by the general formula (G1) between the organic semiconductor film and the aluminum oxide film, the adhesion between the organic semiconductor film and the aluminum oxide film can be improved, even in areas where the metal film or metal compound film (hard mask) formed on the aluminum oxide film is highly stressed. This makes it possible to reduce damage to the organic compound film during hard mask formation and suppress peeling. As a result, it becomes possible to manufacture organic semiconductor devices with excellent characteristics with a high yield. Note that if the tensile stress of the metal film or metal compound film (hard mask) is greater than 1500 MPa, peeling will occur even if the hard mask has a layer containing the organometallic compound. Therefore, it is preferable that the tensile stress of the hard mask be 1500 MPa or less.

[0058] Furthermore, by forming a film containing the organometallic compound represented by the general formula (G1) between the organic semiconductor film and the aluminum oxide film, the aluminum oxide film can be easily removed from the organic semiconductor film 451 using water or a liquid containing water as a solvent. Removal of the protective film using water or a liquid containing water as a solvent, particularly water, can reduce damage to the organic semiconductor film 451 more than removal of the aluminum oxide film, and can also significantly reduce damage to the aluminum oxide that should be left behind during patterning of the organic semiconductor layer, thereby preventing deterioration of the characteristics of the device to be fabricated later.

[0059] In the organometallic compound represented by the general formula (G1), X is preferably an oxygen atom, since this allows stable deposition and the formation of a highly heat-resistant and stable film. Furthermore, the strong interaction with water or a liquid containing water as a solvent also makes it easier to remove the aluminum oxide film. In other words, the organometallic compound represented by the general formula (G1) is preferably an organometallic compound represented by the following general formula (G2):

[0060] [ka]

[0061] In general formula (G2), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, M represents a metal, n represents an integer of 1 to 3, and n is the same as the valence of the metal M. When n is 2 or more, the multiple Ar may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group may be coordinately bonded to the metal M.

[0062] In the above general formula (G1) or (G2), it is preferable that M is aluminum, because this increases the interaction with the aluminum oxide film, further improving adhesion, making it easier to remove the film containing the organometallic compound (protective film), stably carrying out vapor deposition, and forming a stable film with high heat resistance.

[0063] Furthermore, the aryl group having 6 to 30 carbon atoms is preferably a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, an anthracenyl group, a fluorenyl group, a dibenzofluorenyl group, a diphenylfluorenyl group, a spirobifluorenyl group, a pyrenyl group, a phenanthrenyl group, a triphenylenyl group, a perylenyl group, a tetracenyl group, or a chrysenyl group. Furthermore, as the heteroaryl group having 1 to 30 carbon atoms, a group having a pyridine ring, a pyrazine ring, a pyrimidine ring, a pyridazine ring, a triazine ring, a quinoline ring, a quinazoline ring, an isoquinoline ring, a pyrrole ring, a naphthyridine ring, a phenanthridine ring, a quinoxaline ring, an imidazole ring, a benzimidazole ring, an oxazole ring, an isoxazole ring, a thiazole ring, an isothiazole ring, or a benzofuran ring is preferred, a pyridyl group or a quinolyl group is more preferred because they easily form a coordinate bond with the metal M, and a 2-pyridyl group or an 8-quinolyl group is even more preferred for forming a stable coordinate bond with the metal M.

[0064] Specific examples of the organometallic compounds represented by the general formula (G1) and the general formula (G2) include organometallic compounds represented by the following structural formulas (100) to (115).

[0065] [ka]

[0066] In particular, (8-quinolinolato)lithium (abbreviation: Liq) and tris(8-quinolinolato)aluminum (abbreviation: Alq3) are highly preferred materials because they are inexpensive, have been used for a long time, and can be easily removed with water or a liquid containing water as a solvent.

[0067] It is known that Liq and Alq3 are generally insoluble in water. However, we found that Liq and Alq3 formed as vapor-deposited films on organic semiconductor layers can be easily removed with water and are highly suitable as mask layers for removing aluminum oxide films. This result cannot be derived from the common knowledge that they are insoluble in water. A film containing an organometallic compound represented by the general formula (G1) or (G2), particularly Liq or Alq3, can be formed between an organic semiconductor layer and an aluminum oxide layer and used as a mask layer for removing the aluminum oxide film, allowing for easy removal with water.

[0068] By forming a film (protective film) containing such an organometallic compound between an organic semiconductor film and an aluminum oxide film, peeling can be suppressed even when a hard mask with high stress is formed, thereby further reducing damage to the organic semiconductor film caused by processing using photolithography. As a result, it becomes possible to realize ultra-high-definition devices with excellent characteristics processed by photolithography with a high yield.

[0069] The structure of this embodiment mode can be used in appropriate combination with other structures.

[0070] (Embodiment 2) In this embodiment, a method for processing an organic semiconductor layer according to one embodiment of the present invention will be described with reference to FIGS.

[0071] First, an organic semiconductor film 451 is formed on an underlayer 450 (FIG. 3(A)). The underlayer may be an insulating film or a conductive film depending on the device to be fabricated thereafter. The organic semiconductor film 451 may be formed by a dry method such as vapor deposition, or by a wet method such as spin coating.

[0072] Next, a protective film 452 containing an organometallic compound represented by the general formula (G1) or (G2) is formed on the organic semiconductor film 451 (FIG. 3(A)). The protective film 452 is preferably formed by vacuum evaporation.

[0073] Subsequently, an aluminum oxide film 453 is formed on the protective film 452 (FIG. 3(A)). The aluminum oxide film is preferably formed by a method that causes minimal damage to the organic semiconductor film 451, and is preferably formed by the ALD method.

[0074] A metal film or metal compound film 454 is formed on the aluminum oxide film 453 (FIG. 3(B)). The presence of the aluminum oxide film 453 can suppress damage to the organic semiconductor film 451 when forming the metal film or metal compound film 454, so a film formation method that causes relatively large damage to the surface on which the film is formed, such as sputtering, can be selected. Furthermore, as described above, in the sputtering method, damage to the surface can be reduced by increasing the pressure inside the chamber during film formation. On the other hand, a film formed in a region where the pressure inside the chamber is high during film formation has a large tensile stress. If the tensile stress of the metal film or metal compound film 454 becomes large, peeling will occur. However, the presence of the aluminum oxide film 453 suppresses peeling even if the tensile stress of the metal film or metal compound film 454 is large. As a result, in one embodiment of the present invention, even when a metal film or metal compound film 454 that causes little damage to the organic semiconductor film 451 formed in a region where the pressure inside the chamber is high during film formation is used, peeling can be suppressed, and organic semiconductor devices with excellent characteristics can be manufactured with a high yield.

[0075] Examples of materials that can be used to form the metal film or metal compound film 454 include silicon, silicon nitride, silicon oxide, tungsten, titanium, molybdenum, tantalum, tantalum nitride, alloys containing molybdenum and niobium, and alloys containing molybdenum and tungsten. Examples of metal oxides that can be used include indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO). Other examples include indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), and indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide). Alternatively, indium tin oxide containing silicon can also be used.

[0076] When forming the metal film or metal compound film 454 by sputtering, it is preferable to form the film under the same conditions as the actual film using a trial substrate and measure the stress immediately before the actual film formation. This makes it possible to confirm the stress of the metal film or metal compound film 454 that has actually been formed.

[0077] Thereafter, a photosensitive resin is applied onto the metal film or metal compound film 454 to form the resin film 155. The photosensitive resin may be a positive resist or a negative resist.

[0078] Next, the resin is exposed to light in accordance with its photosensitivity and developed to form a photomask layer 455a (FIG. 3(D)). The metal film or metal compound film 454 is etched using the photomask layer 455a to form a metal layer or metal compound layer 454a (FIG. 3(E)). The metal film or metal compound film 454 may be etched by wet etching or dry etching. It is preferable to select and use conditions for the etching such that the selectivity of the metal film or metal compound film 454 is higher than that of the aluminum oxide film 453.

[0079] After forming the metal layer or metal compound layer 454a, the photomask layer 455a is removed (FIG. 4(A)). The presence of the metal film or metal compound film 454 and the aluminum oxide film 453 prevents the organic semiconductor film 451 from being damaged or lost during the processes of forming and removing the photomask layer 455a, allowing for the production of organic semiconductor devices with excellent characteristics. Furthermore, when the metal film or metal compound film 454 is formed by sputtering, organic semiconductor devices with even better characteristics can be obtained by forming the film in a region where the pressure inside the chamber is high during film formation. Meanwhile, while peeling is likely to occur due to increased tensile stress, the presence of the protective film 452 suppresses this occurrence, allowing for the production of organic semiconductor devices with a good yield.

[0080] Thereafter, etching is performed using the metal film or metal compound film 454 as a mask to form an organic semiconductor layer 451a, a protective layer 452a, and an aluminum oxide layer 453a (FIG. 4(B)). These etchings may be performed by wet etching or dry etching, but dry etching is preferred.

[0081] After processing of the organic semiconductor layer 451a is completed, the metal layer or metal compound layer 454a is removed (FIG. 4(C)). The metal layer or metal compound layer 454a may be removed by etching, which may be wet etching or dry etching, but dry etching is preferred. The etching is preferably performed under conditions that provide a higher selective ratio for the metal layer or metal compound layer 454a than the aluminum oxide layer 453a.

[0082] Finally, aluminum oxide layer 453a and protective layer 452a are simultaneously removed by treatment with water or a liquid containing water as a solvent (FIG. 4(E)). The removal method involves immersing the substrate in water or a liquid containing water as a solvent for a certain period of time, followed by rinsing with a shower of pure water. This single process is sufficient to remove metal layer or metal compound layer 454a and protective layer 452a.

[0083] After removing the metal layer or metal compound layer 454a, the aluminum oxide layer 453a may be removed to some extent before treating the protective layer 452a with water or a liquid containing water as a solvent (FIG. 4(D)). The aluminum oxide layer 453a may be removed by etching, which may be wet etching or dry etching. However, wet etching using an alkaline or acidic solution is preferred, and wet etching using an alkaline solution is even more preferred. The presence of the protective layer 452a prevents the surface of the organic semiconductor layer 451a from being exposed to an alkaline or acidic solution, thereby preventing deterioration of the characteristics.

[0084] The organic semiconductor layer 451a processed by such a process can be an organic semiconductor device with good characteristics because damage caused by processing is small. Furthermore, peeling can be suppressed, so that the device can be manufactured with a high yield.

[0085] The organic semiconductor layer 451a can be used in an organic TFT having an organic semiconductor layer 451a, a gate insulating layer 161, a gate electrode 162, and source and drain electrodes 163 and 164 provided on an insulating layer 160 as shown in Figure 5(A); a photoelectric conversion device such as a solar cell or a photosensor having a first electrode 165 and a second electrode 169 and a photoelectric conversion layer 167 provided on the insulating layer 160 as shown in Figure 5(B); and an organic EL device having a first electrode 165, a second electrode 169 and a light-emitting layer 168 provided on the insulating layer 160 as shown in Figure 5(C).

[0086] The structure of this embodiment mode can be used in appropriate combination with other structures.

[0087] (Embodiment 3) In this embodiment, an example of a method for manufacturing an organic semiconductor device according to one embodiment of the present invention will be described with reference to the drawings. Here, a display device 100 as shown in FIG. 6 will be described as an example. The display device 100 includes an organic EL device (also referred to as a light-emitting device) in which the organic semiconductor layer in Embodiment 1 or 2 is an EL layer. That is, what is referred to as an EL layer hereinafter corresponds to the above-described organic semiconductor layer. Note that an organic semiconductor layer including a photoelectric conversion layer can be used as a photosensor by replacing the EL layer. A photosensor and an organic EL device may be included in the light-emitting device. In the display device 100, a plurality of light-emitting devices 130 are formed over an insulating layer 175, as illustrated in FIGS. 6A and 6B. In this embodiment, a display device according to another embodiment of the present invention will be described in detail.

[0088] The display device 100 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0089] In this specification and the like, when describing matters common to, for example, the subpixels 110R, 110G, and 110B, they may be referred to as the subpixels 110. When describing matters common to other components distinguished by alphabets, they may also be described using symbols without the alphabets.

[0090] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows an image to be displayed in the pixel unit 177. In this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but combinations of sub-pixels of other colors may also be used. The number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include sub-pixels of four colors, R, G, B, and white (W), sub-pixels of four colors, R, G, B, and Y, and sub-pixels of R, G, B, and infrared (IR).

[0091] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0092] 6A shows an example of a so-called stripe arrangement in which sub-pixels of different colors are arranged side by side in the X direction and sub-pixels of the same color are arranged side by side in the Y direction. Alternatively, sub-pixels of different colors may be arranged side by side in the Y direction and sub-pixels of the same color may be arranged side by side in the X direction. The arrangement of the light-emitting devices is not limited to this, and other arrangements such as a delta arrangement or a zigzag arrangement may also be used, or a pentile arrangement may also be used.

[0093] A connection section 140 may be provided outside the pixel section 177, and a region 141 may also be provided. When the region 141 is provided, the region 141 is provided between the pixel section 177 and the connection section 140. When the region 141 is provided, an organic compound layer is provided in the region 141. Furthermore, a conductive layer 151C is provided in the connection section 140.

[0094] 6 shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0095] Fig. 6(B) is an example of a cross-sectional view taken along dashed line A1-A2 in Fig. 6(A). As shown in Fig. 6(B), the display device 100 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). The insulating layer 175, the insulating layer 174, and the insulating layer 173 have openings that reach the conductive layer 172, and a plug 176 is provided to fill the opening.

[0096] In the pixel section 177, the light-emitting device 130 is provided on the insulating layer 175 and the plug 176. A barrier layer 131 is provided to cover the light-emitting device 130. The substrate 120 is bonded to the barrier layer 131 by a resin layer 122. Preferably, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting devices 130.

[0097] Although multiple cross sections of the inorganic insulating layer 125 and the insulating layer 127 are shown in FIG. 6(B), when the display device 100 is viewed from above, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are each connected into one.

[0098] 6(B) shows light emitting device 130R, light emitting device 130G, and light emitting device 130B. Light emitting device 130R, light emitting device 130G, and light emitting device 130B emit light of different colors. For example, light emitting device 130R can emit red light, light emitting device 130G can emit green light, and light emitting device 130B can emit blue light. Light emitting device 130R, light emitting device 130G, or light emitting device 130B may also emit other visible light or infrared light.

[0099] The display device of one embodiment of the present invention can be, for example, a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed. Note that the display device of one embodiment of the present invention may also be a bottom-emission type.

[0100] The light-emitting device 130R has a first electrode 101R (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an EL layer 103R on the first electrode, a common layer 104 on the EL layer 103R, and a second electrode (common electrode) 102 on the common layer. Note that the common layer 104 may or may not be provided, but it is preferable to provide it because it can reduce damage to the EL layer 103R during processing.

[0101] The light-emitting device 130G has a first electrode 101G (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an EL layer 103G on the first electrode, a common layer 104 on the EL layer 103G, and a second electrode (common electrode) 102 on the common layer. Note that the common layer 104 may or may not be provided, but it is preferable to provide it because it can reduce damage to the EL layer 103G during processing.

[0102] The pixel electrode 101B includes a first electrode 101B (pixel electrode) made of a conductive layer 151B and a conductive layer 152B, an EL layer 103B on the first electrode, a common layer 104 on the EL layer 103B, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the EL layer 103B during processing.

[0103] The common layer 104 is preferably an electron injection layer or an electron transport layer, more preferably an electron injection layer. When the common layer 104 is an electron transport layer, the electron transport layer preferably has a laminated structure, and it is more preferable that the layer on the second electrode side is the common layer 104 and the layer on the light-emitting layer side is the EL layer 103.

[0104] Furthermore, since the light emitting devices 130R and 130G are also light emitting devices fabricated through a photolithography process, the increase in drive voltage due to the photolithography process is suppressed, and the light emitting devices can be made to have a low drive voltage.

[0105] One of the pixel electrode and the common electrode of the light-emitting device 130 functions as an anode, and the other functions as a cathode. In the following description, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0106] The EL layer 103R, the EL layer 103G, and the EL layer 103B are independent island-shaped, either individually or for each emitted color. By providing the EL layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-resolution display device. This makes it possible to prevent crosstalk and realize a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0107] The island-shaped EL layer 103 is formed by forming an organic compound film and processing the organic compound film by photolithography. By processing the organic compound film by the method for processing an organic semiconductor layer according to one embodiment of the present invention, a display device with excellent characteristics can be obtained. In addition, the display device can be manufactured with a high yield.

[0108] The EL layer 103 is preferably provided so as to cover the top and side surfaces of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the display device 100 compared to a configuration in which the end of the EL layer 103 is located inside the end of the pixel electrode. Furthermore, covering the side surfaces of the pixel electrode of the light-emitting device 130 with the EL layer 103 prevents the pixel electrode from coming into contact with the second electrode 102, thereby preventing short circuits in the light-emitting device 130.

[0109] In the display device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked-layer structure. For example, in the example shown in FIG. 6B, the first electrode of the light-emitting device 130 has a stacked-layer structure of a conductive layer 151 and a conductive layer 152.

[0110] For example, a metal material can be used for the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc., and alloys containing appropriate combinations of these metals can also be used.

[0111] The conductive layer 152 can be formed using an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0112] The conductive layer 151 may have a stacked structure of multiple layers containing different materials, and the conductive layer 152 may have a stacked structure of multiple layers containing different materials. In this case, the conductive layer 151 may include a layer containing a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may include a layer containing a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, a layer in contact with the conductive layer 152 can be a layer containing a material that can be used for the conductive layer 152.

[0113] Note that the side surfaces of the conductive layer 151 preferably have a tapered shape. Specifically, the side surfaces of the conductive layer 151 preferably have a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surfaces of the conductive layer 151 also has a tapered shape. By tapering the side surfaces of the conductive layer 152, coverage of the EL layer 103 provided along the side surfaces of the conductive layer 152 can be improved.

[0114] Next, an example of a method for manufacturing the display device 100 having the configuration shown in FIG. 6A will be described with reference to FIGS.

[0115] [Production method example 1] The thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum deposition method, a pulsed laser deposition (PLD) method, an ALD method, etc.

[0116] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0117] Furthermore, when processing the thin films that constitute the display device, they can be processed using, for example, photolithography.

[0118] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure may also be performed using immersion exposure techniques. Extreme ultraviolet (EUV) light or X-rays may also be used as light for exposure. An electron beam may also be used instead of light for exposure.

[0119] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0120] 5A, an insulating layer 171 is formed on a substrate (not shown). Subsequently, conductive layers 172 and 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0121] The substrate may be a substrate having heat resistance at least sufficient to withstand subsequent heat treatment, such as a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium, or an SOI substrate.

[0122] 7A, openings are formed in the insulating layers 175, 174, and 173, reaching the conductive layer 172. Then, plugs 176 are formed to fill the openings.

[0123] 7A, a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, and a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, are formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed of, for example, a metal material. The conductive film 152f can be formed of, for example, an oxide containing one or more elements selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon.

[0124] 7A, a resist mask 191 is formed over the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist), exposing it to light, and developing it.

[0125] 7B, for example, the conductive film 151f and the conductive film 152f are removed from regions that do not overlap with the resist mask 191. As a result, the conductive layer 151 and the conductive layer 152 are formed.

[0126] 7(C), the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, for example.

[0127] Next, as shown in FIG. 7(D), an insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on conductive layer 152R, conductive layer 152G, conductive layer 152B, conductive layer 152C, and insulating layer 175.

[0128] The insulating film 156f can be an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film, for example, a silicon oxynitride film.

[0129] Subsequently, as shown in FIG. 7(E), the insulating film 156f is processed to form an insulating layer 156R, an insulating layer 156G, an insulating layer 156B, and an insulating layer 156C.

[0130] 8(A), the EL film 103Rf is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175. Note that, as shown in FIG. 8(A), the EL film 103Rf is not formed on the conductive layer 152C.

[0131] Subsequently, as shown in FIG. 8(A), a protective film 452Rf, an aluminum oxide film 453Rf, and a hard mask 454Rf are formed.

[0132] By providing the aluminum oxide film 453Rf on the EL film 103Rf, damage to the EL film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0133] The aluminum oxide film 453Rf is made of a film that is highly resistant to the processing conditions of the EL film 103Rf, specifically, a film that has a high etching selectivity with respect to the EL film 103Rf. The hard mask 454Rf is made of a film that has a high etching selectivity with respect to the aluminum oxide film 453Rf.

[0134] The aluminum oxide film 453Rf and the hard mask 454Rf are formed at a temperature lower than the heat resistance temperature of the EL film 103Rf. The substrate temperature when the aluminum oxide film 453Rf and the hard mask 454Rf are formed is typically 100° C. to 200° C., preferably 100° C. to 150° C., and more preferably 100° C. to 120° C. The light-emitting device of one embodiment of the present invention includes the first compound, and therefore a display device with good display quality can be provided even after a heating step at a higher temperature.

[0135] The aluminum oxide film 453Rf and the hard mask 454Rf are preferably made of a film that can be removed by wet etching or dry etching.

[0136] The aluminum oxide film 453Rf formed on and in contact with the EL film 103Rf is preferably formed using a method that causes less damage to the EL film 103Rf than the hard mask 454Rf. For example, the ALD method (Atomic Layer Deposition method) or vacuum evaporation method is more preferable than the sputtering method.

[0137] The hard mask 454Rf may be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0138] The hard mask 454Rf may be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet light for one or both of the aluminum oxide film 453Rf and the hard mask 454Rf is preferable because it can prevent the EL film 103Rf from being exposed to ultraviolet light during pattern exposure, thereby suppressing deterioration of the EL film 103Rf.

[0139] Furthermore, the hard mask 454Rf can be made of a metal oxide such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or indium tin oxide containing silicon.

[0140] In addition, in the above metal oxide, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used instead of gallium.

[0141] The hard mask 454Rf is preferably made of a semiconductor material such as silicon or germanium because of its high compatibility with semiconductor manufacturing processes, or a compound containing the semiconductor material.

[0142] The hard mask 454Rf may be made of various inorganic insulating films, and an oxide insulating film is particularly preferable because it has higher adhesion to the EL film 103Rf than a nitride insulating film.

[0143] 8(A), a resist mask 190R is formed. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0144] The resist mask 190R is provided in a position overlapping with the conductive layer 152R. The resist mask 190R is preferably provided also in a position overlapping with the conductive layer 152C, which can prevent the conductive layer 152C from being damaged during the manufacturing process of the display device.

[0145] 8(B), the hard mask 454Rf is partially removed using the resist mask 190R to form a hard mask 454R. The hard mask 454R remains on the conductive layer 152R and the conductive layer 152C. The resist mask 190R is then removed. The hard mask 454R is then partially removed using the hard mask 454R as a mask to form an aluminum oxide layer 453R.

[0146] By using the wet etching method, damage to the EL film 103Rf during processing of the aluminum oxide film 453Rf and the hard mask 454Rf can be reduced compared to when using the dry etching method. When using the wet etching method, it is preferable to use an acid aqueous solution such as a developer, an alkaline aqueous solution such as a tetramethylammonium hydroxide aqueous solution (TMAH), or a chemical solution using dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture of these.

[0147] Furthermore, when dry etching is used to process the aluminum oxide film 453Rf, deterioration of the EL film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas.

[0148] The resist mask 190R can be removed in the same manner as the resist mask 191.

[0149] 8(B), the protective film 452Rf and the EL film 103Rf are processed to form the protective layer 452R and the EL layer 103R. For example, using the hard mask 454R and the aluminum oxide layer 453R as masks, parts of the protective film 452Rf and the EL film 103Rf are removed to form the protective layer 452R and the EL layer 103R.

[0150] 8B, a stacked structure of the EL layer 103R, the protective layer 452R, the aluminum oxide layer 453R, and the hard mask 454R remains on the conductive layer 152R. Also, the conductive layers 152G and 152B are exposed.

[0151] The protective film 452Rf and the EL film 103Rf are preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0152] When dry etching is used, deterioration of the EL film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0153] Alternatively, an etching gas containing oxygen may be used. The etching rate can be increased by using an etching gas containing oxygen. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This reduces damage to the EL film 103Rf. Furthermore, problems such as adhesion of reaction products generated during etching can be reduced.

[0154] When dry etching is used, it is preferable to use a gas containing one or more of H, CF, C, F, SF, CHF, Cl, H, O, BCl, or Group 18 elements such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these elements and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas.

[0155] Subsequently, as shown in FIG. 9(A), an EL film 103Gf, which will later become the EL layer 103G, is formed.

[0156] The EL film 103Gf can be formed by the same method as that used to form the EL film 103Rf, and can have the same structure as the EL film 103Rf.

[0157] 9A, a protective film 452Gf, an aluminum oxide film 453Gf, and a hard mask 454Gf are formed in this order. Then, a resist mask 190G is formed. The materials and formation methods of the protective film 452Gf, the aluminum oxide film 453Gf, and the hard mask 454Gf are the same as those applicable to the protective film 452Rf, the aluminum oxide film 453Rf, and the hard mask 454Rf. The materials and formation method of the resist mask 190G are the same as those applicable to the resist mask 190R.

[0158] The resist mask 190G is provided in a position overlapping with the conductive layer 152G.

[0159] 9(B), a portion of the hard mask 454Gf is removed using a resist mask 190G to form a hard mask 454G. The hard mask 454G remains on the conductive layer 152G. The resist mask 190G is then removed. A portion of the aluminum oxide film 453Gf is then removed using the hard mask 454G as a mask to form an aluminum oxide layer 453G. The protective film 452Gf and the EL film 103Gf are then processed to form the protective layer 452G and the EL layer 103G.

[0160] Subsequently, as shown in FIG. 9(C), an EL film 103Bf is formed.

[0161] The EL film 103Bf can be formed by the same method as that used to form the EL film 103Rf, and can have the same structure as the EL film 103Rf.

[0162] 9(C), a protective film 452Bf, an aluminum oxide film 453Bf, and a hard mask 454Bf are formed in this order. Then, a resist mask 190B is formed. The materials and forming methods of the protective film 452Bf, the aluminum oxide film 453Bf, and the hard mask 454Bf are the same as those applicable to the protective film 452Rf, the aluminum oxide film 453Rf, and the hard mask 454Rf. The materials and forming method of the resist mask 190B are the same as those applicable to the resist mask 190R.

[0163] The resist mask 190B is provided in a position overlapping with the conductive layer 152B.

[0164] 9(D), the hard mask 454Bf is partially removed using the resist mask 190B to form a hard mask 454B. The hard mask 454B remains on the conductive layer 152B. The resist mask 190B is then removed. The hard mask 454B is then used as a mask to partially remove the aluminum oxide film 453Bf to form an aluminum oxide layer 453B. The protective film 452Bf and the EL film 103Bf are then processed to form the protective layer 452B and the EL layer 103B. For example, the hard mask 454B and the aluminum oxide layer 453B are used as masks to partially remove the EL film 103Bf to form the EL layer 103B.

[0165] 9(D), a stacked structure of the EL layer 103B, the protective layer 452Bm, the aluminum oxide layer 453B, and the hard mask 454B remains on the conductive layer 152B, and the hard mask 454R and the hard mask 454G are exposed.

[0166] The side surfaces of the EL layers 103R, 103G, and 103B are preferably perpendicular or approximately perpendicular to the surface on which they are formed. For example, the angle between the surface on which they are formed and these side surfaces is preferably 60 degrees or more and 90 degrees or less.

[0167] As described above, the distance between adjacent pairs of the EL layers 103R, 103G, and 103B formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of adjacent pairs of the EL layers 103R, 103G, and 103B. By narrowing the distance between the island-shaped organic compound layers in this manner, a display device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. It is preferable that the distance between the first electrodes of adjacent light-emitting devices be 2 μm or more and 5 μm or less.

[0168] Subsequently, as shown in FIG. 10(A), it is preferable to remove the hard mask 454R, the hard mask 454G, and the hard mask 454B.

[0169] The hard masks 454R, 454G, and 454B can be removed by the same method as in the hard mask processing step. In particular, by using a wet etching method, damage to the EL layer 103 during hard mask removal can be reduced compared to when a dry etching method is used.

[0170] Alternatively, the hard masks 454R, 454G, and 454B may be removed by dissolving them in a polar solvent such as water or alcohol, for example, ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0171] After removing the hard masks 454R, 454G, and 454B, drying treatment may be performed to remove water adsorbed on the surfaces. For example, heat treatment can be performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 120° C. A reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.

[0172] Subsequently, as shown in FIG. 10(B), an inorganic insulating film 125f is formed.

[0173] Subsequently, as shown in FIG. 10(C), an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0174] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0175] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0176] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and also allows for the formation of a film with high coverage. The inorganic insulating film 125f is preferably formed as an aluminum oxide film by, for example, the ALD method.

[0177] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0178] Subsequently, exposure is performed to expose a part of the insulating film 127f to visible light or ultraviolet light. The insulating layer 127 is formed in a region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C.

[0179] The exposed region of the insulating film 127f can control the width of the insulating layer 127 to be formed later. In this embodiment, the insulating layer 127 is processed so as to have a portion overlapping the upper surface of the conductive layer 151.

[0180] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0181] Subsequently, as shown in FIG. 11(A), development is carried out to remove the exposed area of ​​the insulating film 127f, thereby forming the insulating layer 127a.

[0182] 11(B), an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and reduce the thickness of a portion of the aluminum oxide layer 453R, the aluminum oxide layer 453G, and the aluminum oxide layer 453B. As a result, the inorganic insulating layer 125 is formed below the insulating layer 127a. Furthermore, the surfaces of the thin portions of the aluminum oxide layer 453R, the aluminum oxide layer 453G, and the aluminum oxide layer 453B are exposed. Note that, hereinafter, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0183] The first etching treatment can be performed by dry etching or wet etching. Note that it is preferable to form the inorganic insulating film 125f using the same material as the aluminum oxide layer 453R, the aluminum oxide layer 453G, and the aluminum oxide layer 453B, because the first etching treatment can be performed all at once.

[0184] When dry etching is performed, it is preferable to use a chlorine-based gas. Examples of chlorine-based gases that can be used include Cl2, BCl3, SiCl4, and CCl4, either singly or in combination. Furthermore, oxygen gas, hydrogen gas, helium gas, and argon gas can be added to the chlorine-based gas, either singly or in combination. Dry etching allows thin regions of the aluminum oxide layer 453R, the aluminum oxide layer 453G, and the aluminum oxide layer 453B to be formed with good in-plane uniformity.

[0185] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source, such as an inductively coupled plasma (ICP) etching apparatus, or a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes.

[0186] Furthermore, it is preferable to perform the first etching process by wet etching. Using wet etching can reduce damage to the EL layer 103R, the EL layer 103G, and the EL layer 103B compared to using dry etching. For example, wet etching can be performed using an alkaline solution. For example, TMAH, which is an alkaline solution, can be used for wet etching of an aluminum oxide film. Alternatively, an acid solution containing fluoride can also be used. In this case, wet etching can be performed by a puddle method. Note that, if the inorganic insulating film 125f is formed using the same material as the aluminum oxide layer 453R, the aluminum oxide layer 453G, and the aluminum oxide layer 453B, the above-mentioned etching process can be performed simultaneously, which is preferable.

[0187] In the first etching process, aluminum oxide layer 453R, aluminum oxide layer 453G, and aluminum oxide layer 453B are not completely removed, and the etching process is stopped when the film thickness has become thin. In this way, by leaving aluminum oxide layer 453R, aluminum oxide layer 453G, and aluminum oxide layer 453B on EL layer 103R, EL layer 103G, and EL layer 103B, respectively, it is possible to prevent EL layer 103R, EL layer 103G, and EL layer 103B from being damaged in subsequent processing steps.

[0188] Next, the entire substrate is exposed to visible light or ultraviolet light, and the insulating layer 127a is preferably irradiated with the energy density of 0 mJ / cm. 2 Larger, 800mJ / cm 2 It is preferable that the dose is 0 mJ / cm or less, and 2 Larger, 500mJ / cm 2 It is more preferable to perform the following. By performing such exposure after development, the transparency of the insulating layer 127a can be improved in some cases. Furthermore, the substrate temperature required for heat treatment to transform the insulating layer 127a into a tapered shape in a later step can be reduced in some cases.

[0189] Here, the aluminum oxide layer 453R, the aluminum oxide layer 453G, and the aluminum oxide layer 453B each have a barrier insulating layer against oxygen (for example, an aluminum oxide film, etc.), which can reduce the diffusion of oxygen into the EL layer 103R, the EL layer 103G, and the EL layer 103B.

[0190] Next, heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be transformed into the insulating layer 127 having tapered side surfaces (FIG. 11C). The heat treatment is performed at a temperature lower than the upper temperature limit of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. This can improve adhesion between the insulating layer 127 and the inorganic insulating layer 125 and also improve the corrosion resistance of the insulating layer 127.

[0191] By not completely removing the aluminum oxide layer 453R, the aluminum oxide layer 453G, and the aluminum oxide layer 453B in the first etching process and leaving the aluminum oxide layer 453R, the aluminum oxide layer 453G, and the aluminum oxide layer 453B in a thinner state, the EL layer 103R, the EL layer 103G, and the EL layer 103B can be prevented from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0192] 12(A), an etching process is performed using the insulating layer 127 as a mask to remove portions of the aluminum oxide layer 453R, the aluminum oxide layer 453G, the aluminum oxide layer 453B, the protective layer 452R, the protective layer 452G, and the protective layer 452B. As a result, openings are formed in the aluminum oxide layer 453R, the aluminum oxide layer 453G, the aluminum oxide layer 453B, the protective layer 452R, the protective layer 452G, and the protective layer 452B, respectively, and the upper surfaces of the EL layer 103R, the EL layer 103G, the EL layer 103B, and the conductive layer 152C are exposed. Note that, hereinafter, this etching process may be referred to as a second etching process.

[0193] The end portion of the inorganic insulating layer 125 is covered with the insulating layer 127. Also, Fig. 12(A) shows an example in which part of the end portion of the aluminum oxide layer 453G (specifically, the tapered portion formed by the first etching treatment) is covered with the insulating layer 127, and the tapered portion formed by the second etching treatment is exposed.

[0194] The second etching process is performed by wet etching. By using wet etching, damage to the EL layer 103R, the EL layer 103G, and the EL layer 103B can be reduced compared to when dry etching is used. Wet etching can be performed using, for example, an alkaline solution or an acidic solution. It is preferable to use an aqueous solution so that the EL layer 103 does not dissolve.

[0195] 12(B), the second EL layer 104 and the second electrode 102 are formed on the EL layer 103R, the EL layer 103G, the EL layer 103B, the conductive layer 152C, and the insulating layer 127. The second electrode 104 can be formed by a method such as sputtering or vacuum deposition.

[0196] 12(C), a barrier layer 131 is formed on the second electrode 102. The barrier layer 131 can be formed by a method such as a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.

[0197] Subsequently, the substrate 120 is bonded onto the barrier layer 131 using the resin layer 122, thereby completing the manufacture of a display device.

[0198] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped EL layers 103R, 103G, and 103B are formed by forming films over the entire surface and then processing them, rather than using a fine metal mask. This allows the island-shaped layers to be formed with uniform thicknesses. This allows a high-resolution display device or a display device with a high aperture ratio to be realized. Furthermore, even when the resolution or aperture ratio is high and the distance between subpixels is extremely short, the EL layers 103R, 103G, and 103B can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk and realizes a display device with extremely high contrast. Furthermore, a display device with excellent characteristics can be provided, even in a display device including tandem light-emitting devices fabricated by photolithography.

[0199] (Fourth embodiment) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0200] The display device of the present embodiment can be a high-definition display device, and can therefore be used as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, as well as for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0201] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0202] [Display module] 13A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of display devices 100B to 100E described later.

[0203] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0204] 13(B) is a perspective view schematically showing the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0205] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 13(B). The various configurations described in the previous embodiments can be applied to the pixel 284a.

[0206] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0207] One pixel circuit 283a is a circuit that controls the driving of a plurality of elements included in one pixel 284a.

[0208] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0209] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit section 282. An IC may be mounted on the FPC 290.

[0210] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, so that the aperture ratio (effective display area ratio) of the display unit 281 can be made extremely high.

[0211] Such a display module 280 has extremely high resolution and can therefore be suitably used in VR devices such as HMDs or glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even if the display unit is enlarged with the lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this and can be suitably used in electronic devices having relatively small display units.

[0212] [Display device 100A] The display device 100A shown in FIG. 14A includes a substrate 301, a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240, and a transistor 310.

[0213] The substrate 301 corresponds to the substrate 291 in FIGS. 14A and 14B. The transistor 310 is a transistor having a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0214] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0215] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0216] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0217] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0218] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B are provided on the insulating layer 175. An insulator is provided in the region between adjacent light-emitting devices.

[0219] Insulating layer 156R is provided to have a region overlapping with a side surface of conductive layer 151R, insulating layer 156G is provided to have a region overlapping with a side surface of conductive layer 151G, and insulating layer 156B is provided to have a region overlapping with a side surface of conductive layer 151B. Furthermore, conductive layer 152R is provided to cover conductive layer 151R and insulating layer 156R, conductive layer 152G is provided to cover conductive layer 151G and insulating layer 156G, and conductive layer 152B is provided to cover conductive layer 151B and insulating layer 156B. An aluminum oxide layer 453R is located on EL layer 103R, an aluminum oxide layer 453G is located on EL layer 103G, and an aluminum oxide layer 453B is located on EL layer 103B.

[0220] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source and drain of the transistor 310 via an insulating layer 243, an insulating layer 255, an insulating layer 174, a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. Various conductive materials can be used for the plug.

[0221] Furthermore, a barrier layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the barrier layer 131 via a resin layer 122. For details of the components from the light-emitting devices 130 to the substrate 120, refer to the fourth embodiment. The substrate 120 corresponds to the substrate 292 in FIG. 13(A).

[0222] Fig. 14(B) is a modified example of the display device 100A shown in Fig. 14(A). The display device shown in Fig. 14(B) has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has an area where it overlaps with one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. In the display device shown in Fig. 14(B), the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0223] [Display device 100B] FIG. 15 shows a perspective view of the display device 100B, and FIG. 15 shows a cross-sectional view of the display device 100C.

[0224] The display device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In Fig. 15, the substrate 352 is indicated by a dashed line.

[0225] The display device 100B has a pixel unit 177, a connection unit 140, a circuit 356, wiring 355, etc. Fig. 15 shows an example in which an IC 354 and an FPC 353 are mounted on the display device 100B. Therefore, the configuration shown in Fig. 15 can also be called a display module having the display device 100B, an IC (integrated circuit), and an FPC. Here, a display device having a connector such as an FPC attached to a substrate, or a display device having an IC mounted on the substrate, is called a display module.

[0226] The connection section 140 is provided outside the pixel section 177. There may be one or more connection sections 140. The connection section 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0227] The circuit 356 can be, for example, a scanning line driver circuit.

[0228] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0229] 15 shows an example in which an IC 354 is provided on a substrate 351 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 354 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100B and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by, for example, a COF method.

[0230] Figure 16 shows an example of a cross section of the display device 100B in Figure 15, where part of the area including the FPC 353, part of the circuit 356, part of the pixel section 177, part of the connection section 140, and part of the area including the end portion are cut away, as display device 100C.

[0231] [Display device 100C] The display device 100C shown in Figure 16 has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc.

[0232] For details of the light emitting devices 130R, 130G, and 130B, see the fourth embodiment.

[0233] Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B.

[0234] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with a side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0235] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0236] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. A layer 128 is buried in the recesses.

[0237] Layer 128 has the function of filling in recesses in conductive layer 224R, conductive layer 224G, and conductive layer 224B and planarizing the surface. Conductive layers 151R, 151G, and 151B, which are electrically connected to conductive layer 224R, conductive layer 224G, and conductive layer 224B, are provided on conductive layer 224R, conductive layer 224G, and conductive layer 224B and layer 128. Therefore, the regions overlapping with the recesses in conductive layer 224R, conductive layer 224G, and conductive layer 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0238] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for the layer 128 as appropriate. In particular, the layer 128 is preferably formed using an insulating material, and is particularly preferably formed using an organic insulating material. For example, the organic insulating materials that can be used for the insulating layer 127 described above can be used for the layer 128.

[0239] A barrier layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The barrier layer 131 and the substrate 352 are bonded via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130. In FIG. 16, the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0240] 16 shows an example in which connecting portion 140 has conductive layer 224C obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B, conductive layer 151C obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B, and conductive layer 152C obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. Also shown in FIG. 16 is an example in which insulating layer 156C is provided so as to have a region overlapping with a side surface of conductive layer 151C.

[0241] The display device 100C is a top-emission type. Light emitted from the light-emitting device is emitted toward the substrate 352. The substrate 352 is preferably made of a material that is highly transparent to visible light. The pixel electrode contains a material that reflects visible light, and the counter electrode (second electrode 102) contains a material that transmits visible light.

[0242] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0243] The insulating layers 211, 213, and 215 are each preferably formed using an inorganic insulating film.

[0244] The insulating layer 214, which functions as a planarizing layer, is preferably an organic insulating layer.

[0245] The transistor 201 and the transistor 205 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 231, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 223 functioning as a gate.

[0246] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, the source electrode or drain electrode of the transistor 201 is electrically connected to the FPC 353 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.

[0247] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 facing the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 356, etc. Also, various optical members can be arranged on the outside of the substrate 352.

[0248] The substrate 351 and the substrate 352 can be made of the same material as can be used for the substrate 120 .

[0249] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0250] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0251] [Display device 100D] The display device 100D shown in FIG. 17 differs from the display device 100C shown in FIG. 17 mainly in that it is a bottom-emission display device.

[0252] Light emitted from the light emitting device is emitted toward the substrate 351. It is preferable that a material with high transparency to visible light is used for the substrate 351. On the other hand, the light transparency of the material used for the substrate 352 is not an issue.

[0253] A light-shielding layer 317 is preferably formed between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. Figure 17 shows an example in which the light-shielding layer 317 is provided over the substrate 351, the insulating layer 153 is provided over the light-shielding layer 317, and the transistors 201, 205, etc. are provided over the insulating layer 153.

[0254] Light emitting device 130R includes conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.

[0255] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0256] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are each made of a material that is highly transparent to visible light. The second electrode 102 is preferably made of a material that reflects visible light.

[0257] Although the light emitting device 130G is not shown in FIG. 17, the light emitting device 130G is also provided.

[0258] In addition, although FIG. 17 and other figures show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0259] [Display device 100D2] The display device 100D2 shown in Fig. 18 is an example of a bottom-emission type display device that differs from the display device 100D shown in Fig. 18. The display device 100D2 differs from the display device 100D in that it has an organic resin layer 180. Note that in the drawing, the reference numerals of the same components as those in Fig. 18 may be omitted, and the description in Fig. 18 may be referred to for details.

[0260] 18(B) shows a top view layout of pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, 110B, and 110W), and FIG. 18(C) shows a top view of organic resin layer 180 in a region where subpixels 110R and 110G of pixel 178 are formed. Note that the distance between light-shielding layers 317 is width 110Rw in the light-emitting region of subpixel 110R.

[0261] As shown in FIG. 18(A), the organic resin layer 180 is provided on the insulating layer 214. As shown in the region surrounded by the dashed line in FIG. 18(A) and in FIG. 18(C), the organic resin layer 180 has curved recesses 181 (recesses 181a and 181b) at least in the region where the subpixels are formed. The recesses 181 may be provided outside the light-emitting region, such as recess 181c. By providing recess 181c, light emitted in the region overlapping with the light-shielding layer 317 or light traveling to the region overlapping with the light-shielding layer 317 is refracted and can be extracted from the light-emitting region, thereby improving the light-emitting efficiency.

[0262] A plurality of recesses 181 may be formed in a matrix. Recesses 181a and 181b may be provided in contact with each other, or may have a flat surface between them.

[0263] 18, the recess has a hexagonal top surface shape (FIG. 18(C)) and a semicircular cross-sectional shape (FIG. 18(A)), but other shapes may be used as needed. For example, the recess may have a polygonal top surface shape such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any of these polygons with rounded corners, an ellipse, or a circle.

[0264] An insulating layer containing an organic material can be used as the organic resin layer 180. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, etc. can be used as the organic resin layer 180. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the organic resin layer 180.

[0265] Furthermore, a photosensitive resin can be used as the organic resin layer 180. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0266] The organic resin layer 180 may contain a material that absorbs visible light. For example, the organic resin layer 180 itself may be made of a material that absorbs visible light, or the organic resin layer 180 may contain a pigment that absorbs visible light. For example, the organic resin layer 180 may be made of a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0267] In addition, a first electrode 101 (a first electrode 101R and a first electrode 101W) is provided on the organic resin layer 180, and an EL layer 103 is provided on the first electrode 101. Ends of the first electrode 101 and the EL layer 103 may be covered with an insulating layer 127.

[0268] Furthermore, the first electrode 101 formed on the organic resin layer 180 has a similar recess along the recess of the organic resin layer 180. Furthermore, the EL layer 103 formed on the first electrode 101 has a similar recess along the recess of the first electrode 101. Furthermore, the common layer 104 formed on the EL layer 103 has a similar recess along the recess of the EL layer 103. Furthermore, the second electrode 102 formed on the common layer 104 has a similar recess along the recess of the common layer 104. In other words, the recesses of the organic resin layer 180, the first electrode 101, the EL layer 103, the common layer 104, and the second electrode 102 have a structure in which they overlap one another.

[0269] In addition, a common layer 104 is provided over the EL layer 103 and the insulating layer 127, and a second electrode 102 is provided over the common layer 104. A barrier layer 131 is provided over the second electrode 102, and the second electrode 102 is bonded to a substrate 352 via an adhesive layer 142.

[0270] Although light emitting device 130G and light emitting device 130B are not shown in FIG. 18, light emitting device 130G and light emitting device 130B are also provided.

[0271] The light-emitting device of one embodiment of the present invention having the organic resin layer 180 as described above contains the organic compound represented by the general formula (Gh1) in the EL layer 103 as described in Embodiment 1. Therefore, due to the effect of the organic resin layer 180 and the effect of the organic semiconductor device using the organic compound of the present invention being inseparably integrated, an organic semiconductor device with high light-emitting efficiency can be provided. Therefore, an organic semiconductor device with good reliability, low driving voltage, and low power consumption can be provided.

[0272] [Display device 100E] The display device 100E shown in FIG. 19 is a modification of the display device 100C shown in FIG. 16, and differs from the display device 100C mainly in that it has colored layers 132R, 132G, and 132B.

[0273] In the display device 100E, the light-emitting device 130 has an area that overlaps one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. The colored layer 132R, the colored layer 132G, and the colored layer 132B can be provided on the surface of the substrate 352 facing the substrate 351. An end of the colored layer 132R, an end of the colored layer 132G, and an end of the colored layer 132B can overlap the light-shielding layer 157.

[0274] In the display device 100E, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light. The display device 100E may be configured such that the colored layers 132R, 132G, and 132B are provided between the barrier layer 131 and the adhesive layer 142.

[0275] [Display device 100E2] The display device 100E2 shown in Fig. 20 is a modified example of the display device 100E shown in Fig. 19, and has microlenses 182 on the colored layers 132R, 132G, and 132B. Note that in the figure, the reference numerals of the same components as those in Fig. 19 may be omitted, and the description in Fig. 19 may be referred to for details.

[0276] 20(B) shows a top view layout of pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, and 110B), and FIG. 20(C) shows a top view of microlens 182 in the region where subpixels 110R and 110G of pixel 178 are formed. Note that the region where the second electrode 102 and EL layer 103 contact each other has a width 110Gw in the light-emitting region of subpixel 110G.

[0277] 20(A) has a planarization film 143 on a barrier layer 131, and colored layers 132R, 132G, and 132B on the planarization film 144. The planarization film 144 is provided so as to cover the colored layers 132R, 132G, and 132B. A microlens 182 is provided on the planarization film 144.

[0278] As shown in FIG. 20C, the microlens 182 may be provided for each sub-pixel in a region where the sub-pixel is formed.

[0279] 20(C), the top surface shape of the microlens 182 is shown as a hexagon, but other shapes may be used as needed. For example, the top surface shape of the recess may be a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any of these polygons with rounded corners, an ellipse, or a circle.

[0280] The microlenses 182 can be formed using the same material as the organic resin layer 180 .

[0281] The light-emitting device of one embodiment of the present invention having the above-described microlens 182 contains the organic compound represented by the general formula (Gh1) in the EL layer 103 as described in Embodiment 1. Therefore, an organic semiconductor device with high emission efficiency can be provided due to the effect of the microlens 182 and the effect of the organic semiconductor device using the organic compound of the present invention being inseparably integrated. Therefore, an organic semiconductor device with good reliability, low driving voltage, and low power consumption that is optimal for a mobile display can be provided.

[0282] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when multiple configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0283] (Embodiment 5) In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0284] The electronic devices of this embodiment include the display device of one embodiment of the present invention in a display portion. The display device of one embodiment of the present invention has low power consumption and high reliability. Therefore, the display device of one embodiment of the present invention can be used in the display portion of various electronic devices.

[0285] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0286] An example of a wearable device that can be worn on the head will be described with reference to FIGS. 21(A) to 21(D).

[0287] The electronic device 700A shown in Figure 21(A) and the electronic device 700B shown in Figure 21(B) each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0288] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.

[0289] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visible through the optical member 753.

[0290] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0291] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0292] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0293] The housing 721 may be provided with a touch sensor module.

[0294] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0295] The electronic device 800A shown in Figure 21(C) and the electronic device 800B shown in Figure 21(D) each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0296] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, the electronic device can be highly reliable.

[0297] Display unit 820 is provided inside housing 821 at a position that can be viewed through lens 832. Also, by displaying different images on the pair of display units 820, it is possible to perform a three-dimensional display using parallax.

[0298] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that allows the left and right positions of lens 832 and display unit 820 to be adjusted so that they are optimally positioned according to the position of the user's eyes.

[0299] The wearing part 823 allows the user to wear the electronic device 800A or the electronic device 800B on the head.

[0300] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide angle.

[0301] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone.

[0302] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0303] The electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750 .

[0304] 21B includes an earphone unit 727. A part of the wiring connecting the earphone unit 727 and a control unit may be disposed inside the housing 721 or the attachment unit 723.

[0305] 21(D) includes an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be configured to be connected to each other by wire.

[0306] As described above, the electronic devices of one embodiment of the present invention are preferably either glasses-type devices (such as the electronic devices 700A and 700B) or goggle-type devices (such as the electronic devices 800A and 800B).

[0307] An electronic device 6500 shown in FIG. 22A is a portable information terminal that can be used as a smartphone.

[0308] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0309] The display device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can be highly reliable.

[0310] FIG. 22B is a schematic cross-sectional view including the end portion of the housing 6501 on the microphone 6506 side.

[0311] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0312] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0313] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0314] The display device of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0315] 22C shows an example of a television set. A television set 7100 includes a display portion 7000 built in a housing 7171. Here, the housing 7171 is supported by a stand 7173.

[0316] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can be highly reliable.

[0317] The television set 7100 shown in FIG. 22C can be operated using an operation switch provided on a housing 7171 and a separate remote control 7151.

[0318] 22D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0319] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can be highly reliable.

[0320] 22(E) and 22(F) show examples of digital signage.

[0321] 22E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0322] 22F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0323] 22E and 22F, the display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0324] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0325] Furthermore, as shown in Figures 22(E) and 22(F), it is preferable that the digital signage 7300 or the digital signage 7400 be able to wirelessly communicate with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user.

[0326] The electronic devices shown in Figures 23(A) to 23(G) have a housing 9000, a display portion 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0327] 23(A) to 23(G) have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc.

[0328] The electronic devices shown in FIGS. 23A to 23G will be described in detail below.

[0329] FIG. 23A is a perspective view showing a mobile information terminal 9171. The mobile information terminal 9171 can be used as, for example, a smartphone. The mobile information terminal 9171 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9171 can display text and image information on multiple surfaces thereof. FIG. 23A shows an example in which three icons 9050 are displayed. Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notification of an incoming email, SNS, phone call, etc., the title of the email or SNS, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0330] 23B is a perspective view of a mobile information terminal 9172. The mobile information terminal 9172 has a function of displaying information on three or more surfaces of the display portion 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9172 while the mobile information terminal 9172 is placed in a breast pocket of clothes.

[0331] 23C is a perspective view of a tablet terminal 9173. The tablet terminal 9173 is capable of executing various applications such as mobile phone calls, e-mails, document browsing and creation, music playback, internet communication, and computer games. The tablet terminal 9173 has a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0332] 23D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display portion 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free conversation by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and reception with another information terminal and charge itself through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0333] 23(E) to 23(G) are perspective views showing a foldable mobile information terminal 9201. FIG. 23(E) shows the mobile information terminal 9201 in an unfolded state, FIG. 23(G) shows it in a folded state, and FIG. 23(F) is a perspective view showing a state in the process of changing from one of FIG. 23(E) and FIG. 23(G) to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent viewability of the display. A display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm to 150 mm.

[0334] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when multiple configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0335] (Sixth embodiment) In this embodiment, the configuration of an organic EL device, which is an organic semiconductor device having an EL layer as an organic semiconductor layer, will be described with reference to Fig. 24. The organic EL device is an organic semiconductor device including a configuration including an EL layer having a light-emitting layer between a first electrode 101 and a second electrode 102.

[0336] One of the first electrode 101 and the second electrode 102 functions as an anode, and the other functions as a cathode. Figure 24 will be used to explain an example in which the first electrode 101 is the anode.

[0337] The anode is preferably formed using a metal, alloy, conductive compound, or mixture thereof with a large work function (specifically, 4.0 eV or higher). Specific examples include indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide, indium zinc oxide, and indium oxide containing tungsten oxide and zinc oxide (IWZO). These conductive metal oxide films are usually formed by sputtering, but they may also be prepared by applying a sol-gel method. For example, indium zinc oxide may be formed by sputtering using a target containing indium oxide and 1 to 20 wt% zinc oxide. Indium oxide containing tungsten oxide and zinc oxide (IWZO) can also be formed by sputtering using a target containing indium oxide and 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide. Other examples of materials that can be used for the anode include gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), and nitrides of metal materials (e.g., titanium nitride). Graphene can also be used for the anode. By using a composite material (described later) in the layer of the EL layer 103 that contacts the anode, it becomes possible to select an electrode material regardless of the work function.

[0338] The EL layer 103 preferably has a stacked layer structure, but the stacked layer structure is not particularly limited, and various layer structures can be applied, such as a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, a carrier blocking layer (hole blocking layer, electron blocking layer), an exciton blocking layer, and a charge generation layer. Note that any of the layers may not be provided. In this embodiment, a structure including a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 as shown in FIG. 24 will be specifically described below.

[0339] The hole-injection layer 111 is a layer containing a substance having acceptor properties. As the substance having acceptor properties, either an organic compound or an inorganic compound can be used.

[0340] As the acceptor substance, a compound having an electron-withdrawing group (a halogen group or a cyano group) can be used, and examples thereof include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile. In particular, compounds in which an electron-withdrawing group is bonded to a fused aromatic ring having multiple heteroatoms, such as HAT-CN, are preferred because of their thermal stability. Radialene derivatives having an electron-withdrawing group (especially a halogen group such as a fluoro group or a cyano group) are also preferred because of their extremely high electron-accepting properties. Specific examples include α,α',α''-1,2,3-cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzeneacetonitrile]. In addition to the organic compounds described above, other materials having acceptor properties can be used, such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, etc. The hole injection layer 111 can also be formed using phthalocyanine complex compounds such as phthalocyanine (abbreviated as HPc) and copper phthalocyanine (abbreviated as CuPc), aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB) and N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviated as DNTPD), or polymers such as poly(3,4-ethylenedioxythiophene) / polystyrenesulfonic acid (abbreviated as PEDOT / PSS).A substance having acceptor properties can extract electrons from an adjacent hole transport layer (or hole transport material) when an electric field is applied.

[0341] Among substances having acceptor properties, organic compounds having acceptor properties are easy to use because they can be easily vapor-deposited and formed into a film.

[0342] Furthermore, a composite material in which the above-mentioned acceptor substance is contained in a material having a hole-transporting property can also be used for the hole-injection layer 111. Note that by using a composite material in which the acceptor substance is contained in a material having a hole-transporting property, a material for forming an electrode can be selected regardless of the work function. In other words, not only a material with a high work function but also a material with a low work function can be used for the anode.

[0343] As a material having hole transport properties to be used in the composite material, various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. Note that as a material having hole transport properties to be used in the composite material, -6 cm 2 A substance having a hole mobility of 1 / Vs or more is preferred. Specific examples of organic compounds that can be used as a material having a hole transport property in a composite material are listed below.

[0344] Examples of aromatic amine compounds that can be used in composite materials include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B). Specific examples of the carbazole derivative include 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenyl Carbazole (abbreviation: PCzPCN1), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. can be used.Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert- Examples of suitable anthracene include butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, and 2,5,8,11-tetra(tert-butyl)perylene. Pentacene and coronene may also be used. The aromatic hydrocarbon having a vinyl group may also have a vinyl skeleton. Examples of the aromatic hydrocarbon having a vinyl group include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi) and 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA). Note that the organic compound of one embodiment of the present invention can also be used.

[0345] In addition, polymer compounds such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD) can also be used.

[0346] The hole-transporting material used in the composite material preferably has a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. Furthermore, it is preferable that these organic compounds have an N,N-bis(4-biphenyl)amino group, as this allows for the fabrication of organic EL devices with long life. Specific examples of such organic compounds include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-i N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan Ran-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: : BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-Diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-diphenyl-4''-(5;2'- (binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine 4,4'-Bis(1-naphthyl)triphenylamine (abbreviated as αNBA1BP), 4,4'-Bis(1-naphthyl)triphenylamine (abbreviated as αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviated as YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)phenyl]tris(1,1'-biphenyl-4-yl)amine (abbreviated as YGTBi1BP-02), 4-diphenyl-4'-(2-naphthyl)-4''-{9-(4-biphenylyl)carbazole}triphenylamine N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis(4-biphenylyl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(1,1'-biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(4-biphenyl)-N-(dibenzofuran-4-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4 -phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as mBPAFLP), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviated as BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H -carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, etc.

[0347] The hole-transporting material used in the composite material is more preferably a substance having a relatively deep HOMO level of −5.7 eV or more and −5.4 eV or less. When the hole-transporting material used in the composite material has a relatively deep HOMO level, holes can be easily injected into the hole-transport layer 112, and an organic EL device with a long lifetime can be easily obtained. Furthermore, when the hole-transporting material used in the composite material has a relatively deep HOMO level, hole induction can be appropriately suppressed, resulting in an organic EL device with a long lifetime.

[0348] The refractive index of the layer can be reduced by further mixing an alkali metal or alkaline earth metal fluoride with the composite material (preferably with an atomic ratio of fluorine atoms of 20% or more in the layer), which also allows a layer with a low refractive index to be formed inside the EL layer 103, thereby improving the external quantum efficiency of the organic EL device.

[0349] By forming the hole injection layer 111, the hole injection property becomes good, and an organic EL device with a low driving voltage can be obtained.

[0350] The hole transport layer 112 is formed by including a material having a hole transport property. -6 cm 2 It is preferable that the hole mobility is / Vs or more.

[0351] Examples of the material having hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), and 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP). 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBANB), Compounds with an aromatic amine skeleton, such as 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4-yl)-9H,9'H-3,3'-Bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: :BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"- terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylene-2 -yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylen-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, and other compounds having a carbazole skeleton; 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II); 2,Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. Note that the substances listed as materials having hole transport properties used in the composite material of the hole injection layer 111 can also be suitably used as materials for forming the hole transport layer 112.

[0352] The light-emitting layer 113 preferably contains a light-emitting substance and a first organic compound. It may further contain a second organic compound. The light-emitting layer 113 may also contain other materials. It may also be a stack of two layers with different compositions. It is preferable that the first organic compound is an organic compound having an electron-transporting property, and the second organic compound is an organic compound having a hole-transporting property.

[0353] The light-emitting substance may be a fluorescent substance, a phosphorescent substance, or a substance that exhibits thermally activated delayed fluorescence (TADF).

[0354] Examples of materials that can be used as the fluorescent substance in the light-emitting layer 113 include the following: Other fluorescent substances can also be used.

[0355] 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N,9 -diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviated as 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviated as DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPA BPhA), 9,10-bis(1,1'-biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6 -methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine amine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB),6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N'-diphenyl-N,N'-(1,6-pyren-diyl)bis[(6-phenylbenzo[b ]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, condensed aromatic diamine compounds, such as pyrenediamine compounds, such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred because of their high hole-trapping properties, excellent luminous efficiency, and reliability.

[0356] When a phosphorescent material is used as the light-emitting material in the light-emitting layer 113, examples of materials that can be used include the following.

[0357] Organometallic iridium complexes having a pyrimidine skeleton, such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), and bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), ( Organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), and (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), and tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’) iridium(III) acetylacetonate (abbreviated as [Ir(piq)2(acac)]), (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolinyl-κN]phenyl-κC]iridium(III), and (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolinyl-κN]phenyl-κC]iridium(III). In addition to iridium complexes, platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP) and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]) and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]) are also useful. These complexes have emission peaks in the wavelength range from 600 nm to 700 nm. Furthermore, organometallic iridium complexes with a pyrazine skeleton can emit red light with good chromaticity. Other known red phosphorescent materials can also be used.

[0358] Organometallic iridium compounds with a 4H-triazole skeleton, such as tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]) and tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]). complexes, organometallic iridium complexes with 1H-triazole skeletons such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), fac-tris[1-( 2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), tris(2-[1-{2,6-bis(1-methylethyl)phenyl}-1H-imidazol-2-yl-κN3] organometallic iridium complexes with an imidazole skeleton such as tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC2)phenyl-κC]iridium(III) (abbreviation: [Ir(cb)3]), organometallic complexes with a benzimidazolidene skeleton such as bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ] Organometallic iridium complexes with phenylpyridine derivatives bearing electron-withdrawing groups as ligands, such as iridium(III) acetylacetonate (abbreviated as FIracac), are compounds that exhibit blue phosphorescence, with peak emission in the wavelength range from 440 nm to 520 nm.

[0359] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6- Organometallic iridium complexes with a pyrimidine skeleton, such as (2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]) and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), and tris(2-phenylpyridinato-N,C 2’) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), [2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzo [furo[2,3-b]pyridin-7-yl-κC]bis[5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC]iridium(III) (abbreviated as Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mbfpy py-d3)), [2-(4-d3-methyl-5-phenyl-2-pyridinyl-κN2)phenyl-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviated as [Ir(5mppy-d3)2(mdppy-d3)]), [2-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviated as [Ir(ppy Examples include organometallic iridium complexes with a pyridine skeleton, such as [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mdppy)), and rare earth metal complexes, such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviated as [Tb(acac)3(Phen)]). These compounds primarily exhibit green phosphorescence, with an emission peak in the wavelength range from 500 nm to 600 nm. Organometallic iridium complexes with a pyrimidine skeleton are particularly preferred due to their outstanding reliability and luminous efficiency.

[0360] TADF materials include fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. Also available are metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of the metal-containing porphyrin include protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (PtCl2OEP), all of which are shown in the following structural formulas.

[0361] [ka]

[0362] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), and Heterocyclic compounds having one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, such as 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviation: ACRSA), can also be used. The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. Among the skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzofuropyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability. Furthermore, among the skeletons having a π-electron-rich heteroaromatic ring, acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are preferred because they are stable and reliable.The furan skeleton is preferably a dibenzofuran skeleton, and the thiophene skeleton is preferably a dibenzothiophene skeleton. The pyrrole skeleton is particularly preferably an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton. Substances in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded are particularly preferred because the electron-donating ability of the π-electron-rich heteroaromatic ring and the electron-accepting ability of the π-electron-deficient heteroaromatic ring are both enhanced, thereby reducing the energy difference between the S1 level and the T1 level, thereby enabling efficient thermally activated delayed fluorescence. Instead of the π-electron-deficient heteroaromatic ring, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used. The π-electron-rich skeleton may be, for example, an aromatic amine skeleton or a phenazine skeleton. Examples of usable π-electron-deficient skeletons include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-rich heteroaromatic ring.

[0363] [ka]

[0364] Alternatively, TADF materials may be used, which are capable of extremely fast and reversible intersystem crossing and emit light according to a thermal equilibrium model between singlet and triplet excited states. Such TADF materials have an extremely short emission lifetime (excitation lifetime) for TADF materials, and can suppress efficiency decline in the high-brightness region of light-emitting devices. Specific examples include materials with the molecular structure shown below.

[0365] [ka]

[0366] TADF materials are materials with a small difference between the S1 and T1 levels, and have the ability to convert triplet excitation energy to singlet excitation energy through reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy (reverse intersystem crossing) using a small amount of thermal energy, allowing for efficient generation of a singlet excited state. Triplet excitation energy can also be converted into light emission.

[0367] Furthermore, exciplexes (also known as exciplexes), which form an excited state with two types of substances, have an extremely small difference between the S1 and T1 levels and function as TADF materials that can convert triplet excitation energy into singlet excitation energy.

[0368] The phosphorescence spectrum observed at low temperatures (for example, 77 K to 10 K) can be used as an indicator of the T1 level. For a TADF material, when a tangent line is drawn at the base of the fluorescence spectrum on the short wavelength side and the energy of the wavelength of the extrapolated line is defined as the S1 level, and a tangent line is drawn at the base of the phosphorescence spectrum on the short wavelength side and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0369] When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material, and the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0370] Examples of electron transport materials that can be used as the host material include metal complexes such as bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), and organic compounds having a π-electron-deficient heteroaromatic ring. Examples of organic compounds having a π-electron-deficient heteroaromatic ring include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4 -oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), and other organic compounds containing heteroaromatic rings with a polyazole skeleton, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBT BPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 2,6-Bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviated as 2,4NP-6PyPPm), 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviated as 6mBP-4Cz2PPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(1,1'-biphenyl-4-yl)pyrimidine (abbreviated as 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazol-2- 11-[(3'-dibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr), 11-[(3'-dibenzothiophen-4-yl)biphenyl-4-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 11-[(3'-(9H-carbazol-9-yl)biphenyl-3-yl]phenanthro[9',10' :4,5]furo[2,3-b]pyrazine, 12-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenantho[9',10':4,5]furo[2,3-b]pyrazine (abbreviation: 12PCCzPnfpr), 9-[(3'-9-phenyl-9H-carbazol-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmPCBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9PCCzNfpr), 10-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 10PCCzNfpr), 9-[3'-(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9mBnfBPNfpr), 9-{3-[6-(9,9-dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-phenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9-[3-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenyl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mPCCzPNfpr), 9-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl)-3-yl}naphtho[1',2' :4,5]furo[2,3-b]pyrazine, 11-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}phenanthro[9',10':4,5]furo[2,3-b]pyrazine, and other heteroaromatic compounds with a diazine skeleton; 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and other heteroaromatic compounds with a pyridine skeleton; 2-[3'-(9,9-dimethylphenyl) 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: mFBPTzn), 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine 3-(4,6-diphenyl-1,3,5-triazine)-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylen-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 9-[4-(4,6-diphenyl-1,3,Examples of suitable organic compounds include those containing heteroaromatic rings with a triazine skeleton, such as [5-triazin-2-yl]-2-dibenzothiophenyl]-2-phenyl-9H-carbazole (abbreviation: PCDBfTzn) and 2-[1,1'-biphenyl]-3-yl-4-phenyl-6-(8-[1,1':4',1''-terphenyl]-4-yl-1-dibenzofuranyl)-1,3,5-triazine (abbreviation: mBP-TPDBfTzn). Among the above, organic compounds containing heteroaromatic rings with a diazine skeleton, organic compounds containing heteroaromatic rings with a pyridine skeleton, and organic compounds containing heteroaromatic rings with a triazine skeleton are preferred due to their high reliability. In particular, organic compounds containing heteroaromatic rings with a diazine (pyrimidine, pyrazine) skeleton and organic compounds containing heteroaromatic rings with a triazine skeleton have high electron transport properties and contribute to reduced driving voltage.

[0371] As the hole transport material used as the host material, an organic compound having an amine skeleton and a π-electron-rich heteroaromatic ring can be used. Examples of the organic compound having an amine skeleton and a π-electron-rich heteroaromatic ring include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triamine, and the like. Triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine Aromatic amines such as PCBANB, 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (PCBASF) Compounds with an amine skeleton, 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-bis(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: PCBFF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-(9,9-dimethyl-9H-fluoren-2-yl)-9,9-dimethyl-9H-fluoren-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-diphenyl-9H-fluorene- 2-Amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi(9H-fluoren)-2-amine (abbreviated as PCBBiSF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl] -9,9'-spirobi(9H-fluoren)-4-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':3',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-2-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-2-amine, N-[4-(9-phenyl-9H-carbazol- compounds having a carbazole skeleton such as N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. In addition, the organic compounds listed as examples of materials having hole transport properties in the hole transport layer 112 can also be used as the hole transport material of the host.

[0372] By mixing an electron transport material and a hole transport material, the transport property of the light-emitting layer 113 can be easily adjusted, and the recombination region can be easily controlled. Also, a TADF material can be used as an electron transport material or a hole transport material.

[0373] The TADF materials that can be used as host materials are the same as those listed above. When a TADF material is used as a host material, the triplet excitation energy generated in the TADF material is converted to singlet excitation energy through reverse intersystem crossing, and the energy is then transferred to the light-emitting material, thereby increasing the luminous efficiency of the organic EL device. In this case, the TADF material functions as the energy donor, and the light-emitting material functions as the energy acceptor.

[0374] This is very effective when the luminescent material is a fluorescent luminescent material. In this case, in order to obtain high luminous efficiency, the S1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. In addition, the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. Therefore, the T1 level of the TADF material is preferably higher than the T1 level of the fluorescent luminescent material.

[0375] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, as this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0376] Furthermore, to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, carrier recombination is preferred in the TADF material. Furthermore, it is preferable that the triplet excitation energy generated in the TADF material does not transfer to triplet excitation energy in the fluorescent material. To achieve this, the fluorescent material preferably has a protecting group around the luminophore (the skeleton responsible for light emission) of the fluorescent material. The protecting group is preferably a substituent without a π bond, and is preferably a saturated hydrocarbon. Specific examples include alkyl groups with 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups with 3 to 10 carbon atoms, and trialkylsilyl groups with 3 to 10 carbon atoms. Multiple protecting groups are even more preferred. Substituents without a π bond have poor carrier transport properties, allowing for increased distance between the TADF material and the luminophore of the fluorescent material without significantly affecting carrier transport or carrier recombination. Here, the term "luminophore" refers to the atomic group (skeleton) responsible for light emission in the fluorescent material. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring. Examples of such luminophores include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton. In particular, fluorescent materials having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0377] When a fluorescent emitting substance is used as the emitting substance, a material having an anthracene skeleton is suitable as the host material. Using a substance having an anthracene skeleton as the host material for a fluorescent emitting substance makes it possible to realize an emitting layer with both excellent luminous efficiency and durability. As a substance having an anthracene skeleton to be used as a host material, a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, is preferred due to its chemical stability. Furthermore, host materials having a carbazole skeleton are preferred because of their enhanced hole injection and transport properties. However, host materials containing a benzocarbazole skeleton, in which a benzene ring is further condensed to carbazole, are even more preferred because their HOMO is approximately 0.1 eV shallower than that of carbazole, facilitating hole insertion. In particular, host materials containing a dibenzocarbazole skeleton are preferred because their HOMO is approximately 0.1 eV shallower than that of carbazole, facilitating hole insertion, and also exhibiting excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton). Note that, from the viewpoint of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2- anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl- 9-anthracenyl)-benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-[4-(10-[1,1'-biphenyl]-4-yl-9-anthracenyl)phenyl]-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviation: 2αN-αNPhA), 9-(1-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), )phenyl]anthracene (abbreviation: αN-mαNPAnth), 9-(2-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βN-mαNPAnth), 9-(1-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviation: αN-αNPAnth), 9-(2-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: βN-βNPAnth), 2-(1-naphthyl)-9-(2-naphthyl)-10-phenylanthracene (abbreviation: 2αN-βNPh), and the like.In particular, CzPA, cgDBCzPA2mBnfPPA, and PCzPA are preferable choices because they exhibit very good properties.

[0378] A phosphorescent material can be used as part of the mixed material. The phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as a light-emitting material.

[0379] The mixed materials may also form an exciplex. The exciplex is preferably selected from a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, because this allows for smooth energy transfer and efficient light emission. Furthermore, this configuration is also preferable because it reduces the driving voltage.

[0380] At least one of the materials forming the exciplex may be a phosphorescent material, which allows efficient conversion of triplet excitation energy into singlet excitation energy through reverse intersystem crossing.

[0381] As a combination of materials that efficiently form an exciplex, it is preferable that the HOMO level of the hole-transporting material is equal to or higher than the HOMO level of the electron-transporting material. It is also preferable that the LUMO level of the hole-transporting material is equal to or higher than the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0382] The formation of exciplexes can be confirmed by, for example, comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film of these materials and observing the phenomenon that the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and a mixed film of these materials and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lived component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL can also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and a mixed film of these materials and observing differences in transient response.

[0383] When a hole-blocking layer is provided, the hole-blocking layer is in contact with the light-emitting layer 113 and contains an organic compound that has electron-transporting properties and can block holes. The organic compound constituting the hole-blocking layer is preferably a material that has excellent electron-transporting properties, poor hole-transporting properties, and a deep HOMO level. Specifically, the hole-blocking layer has a HOMO level that is 0.5 eV or more deeper than the HOMO level of the material contained in the light-emitting layer 113, and an electron mobility at a square root of an electric field strength [V / cm] of 600 is 1×10 -6 cm 2 A substance having an electron mobility of 1 / Vs or higher is preferred.

[0384] In particular, 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq), 2-{3-[2-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq-02), 2-{3-[3-(N-phenyl-9H-carbazol-2-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2 mPCCzPDBq-03), 2-{3-[3-(N-(3,5-di-tert-butylphenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline, 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated as mPCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as mPC CzPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as PCCzPTzn), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated as PCCzTzn(CzT)), 9-[3-(4,6-diphenyl-pyrimidin-2-yl)phenyl]-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated as 2PCCzPPm), 9- (4,6-diphenyl-pyrimidin-2-yl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated as 2PCCzPm), 4-[2-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]benzofuro[3,2-d]pyrimidine (abbreviated as 4PCCzBfpm-02), 4-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}benzo[h]quinazoline, 9-[3-(2,6-diphenyl-pyridin-4-yl)phenyl]-9'-phenyl-3,3'-bi-9H-carbazole is preferred because it has good heat resistance.

[0385] When other materials are used for the hole blocking layer, it is preferable to use an organic compound having a HOMO level deeper than the HOMO level of the material contained in the light-emitting layer 113 from among materials that can be used for the hole transport layer described later.

[0386] The electron transport layer 114 is an organic compound having electron transport properties, and has an electron mobility of 1×10 when the square root of the electric field strength [V / cm] is 600. -6 cm 2 A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can be used as long as they have a higher electron transporting property than holes. Note that the organic compound is preferably an organic compound having a π-electron-deficient heteroaromatic ring. The organic compound having a π-electron-deficient heteroaromatic ring is preferably one or more of, for example, an organic compound having a heteroaromatic ring with a polyazole skeleton, an organic compound having a heteroaromatic ring with a pyridine skeleton, an organic compound having a heteroaromatic ring with a diazine skeleton, and an organic compound having a heteroaromatic ring with a triazine skeleton.

[0387] Specific examples of the organic compound having a π-electron-deficient heteroaromatic ring that can be used in the electron transport layer include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1, Organic compounds with an azole skeleton, such as 3,5-bis[3-(9H-carbazole)-3,4-oxadiazol-2-yl]phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), and 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), Organic compounds containing heteroaromatic rings with a pyridine skeleton, such as 1,3,5-tri[3-(3-pyridyl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: TmPyPB), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), and 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen). , 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f, h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[(3'-dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-bis(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), [3-(Phenanthrene-9-yl)phenyl]pyrimidine (abbreviated as 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviated as 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviated as 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviated as 4,6mCzBP2Pm), 8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophene) 4,8-Bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviated as 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviated as 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviated as 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(1,1'-biphenyl-3-yl)]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quina) 2,6(P-Bqn)2Py), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 8-(1,1':4',1"-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-benzofuro[3,2-d]pyrimidine (abbreviation: PC-cgDBCzQz), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(1,1'-biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 8-(1,1':4',1"-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-benzofuro[3,2-d]pyrimidine ... Abbreviation: 8mpTP-4mDBtPBfpm), 4,8-bis[3-(dibenzofuran-4-yl)phenyl]benzofuro[3,2-d]pyrimidine, 8-(1,1':4',1"-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)biphenyl-4-yl]-benzofuro[3,2-d]pyrimidine, 4,8-bis[3-(9H-carbazol-9-yl)phenyl]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mCzP2Bfpm ), 8-(1,1':4',1"-terphenyl-3-yl)-4-[3-(9-phenyl-9H-carbazol-3-yl)phenyl]-benzofuro[3,2-d]pyrimidine, 8-(1,1'-biphenyl-4-yl)-4-[3-(9-phenyl-9H-carbazol-3-yl)biphenyl-3-yl]-benzofuro[3,2-d]pyrimidine, 8-(1,organic compounds having a diazine skeleton such as 1'-biphenyl-4-yl)-4-{3-[2-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}benzofuro[3,2-d]pyrimidine, 8-phenyl-4-{3-[2-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}benzofuro[3,2-d]pyrimidine, and 8-(1,1'-biphenyl-4-yl)-4-(3,5-di-9H-carbazol-9-yl-phenyl)benzofuro[3,2-d]pyrimidine; -[3'-(9,9-dimethyl-9H-fluoren-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{ 3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02 ), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-Tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridyl)-5-(9-phenanthryl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-(4-[1,1'-diphenyl]-4-yl-6-phenyl-1,3,5-triazin-2-yl)-11,12-dihydro-12-phenyl-indolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenylene- Examples of organic compounds having a triazine skeleton include 9-[4-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzothiophenyl]-2-phenyl-9H-carbazole (abbreviation: PCDBfTzn), and 2-[1,1'-biphenyl]-3-yl-4-phenyl-6-(8-[1,1':4',1''-terphenyl]-4-yl-1-dibenzofuranyl)-1,3,5-triazine (abbreviation: mBP-TPDBfTzn). Among the above, organic compounds having a heteroaromatic ring with a diazine skeleton, organic compounds having a heteroaromatic ring with a pyridine skeleton, and organic compounds having a heteroaromatic ring with a triazine skeleton are preferred due to their high reliability. In particular, organic compounds containing heteroaromatic rings with a diazine (pyrimidine, pyrazine) skeleton and organic compounds containing heteroaromatic rings with a triazine skeleton have high electron transport properties and contribute to reducing driving voltages.

[0388] The electron transport layer 114 having this structure may also serve as the electron injection layer 115.

[0389] Between the electron transport layer 114 and the common electrode (cathode) 102, it is preferable to provide a layer containing an alkali metal or alkaline earth metal, such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF), or (8-quinolinolato)lithium (abbreviated as Liq), or a compound or complex thereof, as the electron injection layer 115. A co-evaporated film of ytterbium (Yb) and lithium is also preferable. The electron injection layer 115 may be an electride, which is a layer made of a substance having electron transport properties and which contains an alkali metal or alkaline earth metal or a compound thereof. Examples of electrides include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum.

[0390] It is also possible to use a layer in which a substance having electron transport properties (preferably an organic compound having a bipyridine skeleton) contains a fluoride of the alkali metal or alkaline earth metal in a concentration (50 wt % or more) sufficient to form a microcrystalline state, as the electron-injection layer 115. This layer has a low refractive index, and therefore, it is possible to provide an organic EL device with better external quantum efficiency.

[0391] Materials that can be used to form the cathode include metals, alloys, electrically conductive compounds, and mixtures thereof with a low work function (specifically, 3.8 eV or less). Specific examples of such cathode materials include alkali metals such as lithium (Li) and cesium (Cs), elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), alloys containing these (MgAg, AlLi), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these. However, by providing an electron injection layer between the cathode and the electron transport layer, various conductive materials can be used as the cathode, regardless of the magnitude of the work function, such as Al, Ag, ITO, and indium oxide-tin oxide containing silicon or silicon oxide.

[0392] These conductive materials can be formed into films by dry methods such as vacuum deposition and sputtering, inkjet methods, spin coating, etc. Alternatively, they may be formed by a wet method using a sol-gel method, or by a wet method using a paste of a metal material.

[0393] In addition, various methods, whether dry or wet, can be used to form the EL layer 103. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, or spin coating may be used.

[0394] Furthermore, the above-mentioned electrodes or layers may be formed using different film formation methods.

[0395] The configuration of the layer provided between the anode and cathode is not limited to the above, but a configuration in which the light-emitting region where holes and electrons recombine is provided at a location away from the anode and cathode is preferred so as to suppress quenching caused by the proximity of the light-emitting region to the electrodes and the metal used in the carrier injection layer.

[0396] Furthermore, the hole transport layer and electron transport layer in contact with the light-emitting layer 113, particularly the carrier transport layer close to the recombination region in the light-emitting layer 113, are preferably made of a material having a band gap larger than the band gap of the light-emitting material constituting the light-emitting layer or the light-emitting material contained in the light-emitting layer, in order to suppress energy transfer from excitons generated in the light-emitting layer.

[0397] Note that the structure of this embodiment mode can be used in appropriate combination with structures of other embodiments. [Example]

[0398] This example shows the results of an investigation into the stress and peeling occurrence of tungsten (W) films formed by sputtering. In this example, a sample for stress measurement was first prepared, followed by a sample having the configuration of an actual organic semiconductor device to determine whether peeling occurs. The W film formed on the sample for stress measurement and the W film (corresponding to a hard mask) formed on the sample having the actual configuration were formed under the same film formation conditions. The structural formula of the organic compound used in this example is shown below.

[0399] [ka]

[0400] <How to prepare a sample for stress measurement> The specimen for stress measurement was prepared by forming an HCl thermal oxide film on a silicon substrate and then forming a W film on the film by sputtering.

[0401] <Method for preparing a sample with an actual structure> Two types of samples having an actual configuration were prepared: a sample with a protective layer (sample 1) and a sample without a protective layer (sample 2).

[0402] First, an oxide film was formed on a silicon substrate, and then 50 nm of titanium, 70 nm of aluminum, 6 nm of titanium, and 10 nm of indium tin oxide (ITSO) containing silicon dioxide were deposited in that order by sputtering. This layered film was then patterned by photolithography to form the first electrode.

[0403] Next, a silicon oxide film was formed on the first electrode by CVD to a thickness of 100 nm to form an inorganic insulating film, which was then processed by photolithography to form multiple openings that overlapped with the first electrode.

[0404] The openings were formed assuming a stripe array of 251 x 251 pixels, totaling 63,001 pixels, aligned in a matrix within a 2 mm square area. The area of ​​the first electrode exposed in the openings (i.e., the light-emitting area of ​​the subpixels) was approximately 6.42 μm x 1.14 μm, and this shape and arrangement corresponded to a pixel density of 3,207 ppi.

[0405] Next, as a pretreatment for forming a light-emitting device on the substrate, the substrate surface was washed with water, and the substrate was heat-treated at 120°C for 120 seconds. After that, 1,1,1,3,3,3-hexamethyldisilazane (abbreviation: HMDS) was vaporized and sprayed onto the substrate heated to 60°C for 120 seconds.

[0406] Then, about 1 × 10 -4 The substrate was introduced into a vacuum deposition apparatus whose internal pressure had been reduced to 100 Pa, and after vacuum baking at 170°C for about 60 minutes in the heating chamber of the vacuum deposition apparatus, the substrate was allowed to cool for about 30 minutes.

[0407] Next, the substrate was fixed to a holder installed in a vacuum deposition apparatus with the surface with the first electrode facing downward. A 158 nm film of N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviated as PCBBiF) represented by the above structural formula (i) was deposited on the inorganic insulating film and the first electrode by vapor deposition. Subsequently, a 12 nm film of 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P) represented by the above structural formula (ii) was deposited. The laminated film of PCBBiF and mPPhen2P corresponds to the EL layer of the organic EL device.

[0408] Subsequently, a protective layer was formed by vapor-depositing tris(8-quinolinolato)aluminum (abbreviation: Alq3) to a thickness of 10 nm on the mPPhen2P only for Sample 1. Note that Alq3 is one of the substances shown as general formula (G1) in Embodiment 1.

[0409] Next, the sample was processed using photolithography. After removing the sample from the vacuum deposition apparatus and exposing it to the atmosphere, an aluminum oxide film was formed to a thickness of 30 nm using the ALD method, using trimethylaluminum (TMA) as a precursor and water vapor as an oxidant.

[0410] A 54-nm thick tungsten (W) film was formed as a hard mask on the aluminum oxide film by sputtering. The target was tungsten, the argon flow rate was 80 to 100 sccm, the target-to-substrate distance was 60 mm, and the substrate temperature was 50°C. Seven types of sample 1 were fabricated with chamber pressures of 0.7 Pa, 1.6 Pa, 1.8 Pa, 2.0 Pa, 2.2 Pa, 2.8 Pa, and 3.4 Pa during film formation. Five types of sample 2 were fabricated with chamber pressures of 0.7 Pa, 1.6 Pa, 1.8 Pa, 2.0 Pa, and 2.2 Pa during film formation.

[0411] A photoresist was applied to the hard mask to a thickness of 700 nm, exposed to light, and then developed with a 2.38% aqueous solution of TMAH (tetramethylammonium hydroxide).

[0412] The results of observing the thus prepared samples 1 and 2 under a microscope to confirm whether peeling occurred or not are shown below. Note that even if the chamber pressure during film formation is the same, the stress of the formed hard mask varies slightly, so the stress values ​​measured using a stress measurement sample are also shown.

[0413] [Table 1]

[0414] Thus, it was found that Sample 1 with the protective layer formed thereon did not suffer from peeling even in the hard mask stress range where peeling occurred in Sample 2 without the protective layer. Specifically, it was found that peeling did not occur even when the hard mask stress was in the range of 1200 MPa to 1500 MPa, that is, when the pressure in the chamber during film formation was in the range of 2.0 Pa or more but less than 2.8 Pa.

[0415] In sputtering, a film formed at a higher chamber pressure during film formation causes less damage to underlying layers, and so an organic semiconductor device having a protective layer and fabricated using a hard mask in the range of 1200 MPa to 1500 MPa, i.e., an organic semiconductor device in which a hard mask is fabricated at a chamber pressure during film formation in the range of 2.0 Pa or more and less than 2.8 Pa, suffers less damage to the organic semiconductor layer due to the formation of the hard mask, and can be an organic semiconductor device with good characteristics and a good yield. Furthermore, when considering the range of chamber pressure during film formation, the pressure range in which peeling does not occur is wide, which also enables a wide process margin. [Explanation of symbols]

[0416] 100 display device 101R First electrode 101G First electrode 101B first electrode 101W First electrode 101 first electrode 102 second electrode 103 EL layer 103R EL layer 103G EL layer 103B EL layer 103Bf EL membrane 103Gf EL membrane 103Rf EL membrane 110 subpixels 110W subpixel 110R subpixel 110G subpixel 110B subpixel 111 Hole injection layer 112 Hole transport layer 113 Light-emitting layer 114 Electron transport layer 115 Electron injection layer 120 boards 125 Insulating Layer 127 Insulating Layer 127a Insulating layer 130 Light-emitting devices 130B Light-emitting devices 130G Light Emitting Device 130R Light Emitting Device 132B Colored layer 132G colored layer 132R colored layer 140 Connection 153 Insulating Layer 156B Insulating layer 156C Insulation layer 156G Insulation layer 156R Insulation layer 173 Insulating Layer 175 Insulating Layer 155 Resin Film 160 Insulating Layer 161 Gate insulating layer 162 gate electrode 165 First electrode 167 Photoelectric conversion layer 168 Light-emitting layer 169 Second Electrode 171 Insulating layer 174 Insulating Layer 177 Pixel section 190B resist mask 190G resist mask 190R resist mask 191 Resist mask 204 Connection 211 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 243 Insulating Layer 254 Insulating Layer 255 insulating layer 261 Insulating Layer 281 Display section 284 pixel section 291 Circuit Board 292 PCB 301 Substrate 313 Insulating Layer 314 Insulating Layer 351 Circuit Board 352 Circuit Board 450 Base film 451 Organic Semiconductor Film 451a Organic semiconductor layer 452 Protective film 452Rf Protective film 452Gf protective film 452Bf Protective film 452B Protective layer 452G protection layer 452R protective layer 452a protective layer 453 Aluminum oxide film 453a Aluminum oxide layer 453B Aluminum oxide layer 453G Aluminum oxide layer 453R Aluminum oxide layer 453Bf Aluminum oxide film 453Gf Aluminum oxide film 453Rf Aluminum oxide film 454 Metal or metal compound film 454a Metal or metal compound layer 455a Photomask layer 601 Source line driver circuit, driver circuit section 721 Case 751 Display Panel 756 Display area 820 Display section 821 Case 6501 Housing 6502 Display section 6505 Speaker 6506 Microphone 6507 Camera 6511 Display Panel 7000 Display 7151 Remote Controlled Machine 7171 Case 7173 Stand 7213 Pointing Device 7214 External connection port 7211 Case 7212 keyboard 7301 Housing 7303 Speaker 9000 chassis 9001 Display section 9002 Camera 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9055 Hinge

Claims

1. forming an organic semiconductor film on the first electrode; forming a protective film containing an organometallic compound represented by the following general formula (G1) on the organic semiconductor film; forming a first aluminum oxide film on the protective film; forming a metal film or metal compound film having a tensile stress of 1200 MPa or more and 1500 MPa or less on the first aluminum oxide film; removing a part or all of the metal film or metal compound film; removing all or part of the protective film and all or part of the first aluminum oxide film. 【Chemistry 1】 (In General Formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; X represents oxygen or sulfur; M represents a metal; n represents an integer of 1 to 5; and n is the same as the valence of the metal M. Note that when n is 2 or more, multiple Ars may be the same or different, and Xs may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group and the metal M may be coordinately bonded.)

2. In claim 1, The metal film or metal compound film is formed by a sputtering method.

3. In claim 1, The method for processing an organic semiconductor layer, wherein water or a liquid containing water as a solvent is used in the step of removing all or part of the protective film and all or part of the first aluminum oxide film.

4. In claim 1 or claim 3, The method for processing an organic semiconductor layer, wherein the first aluminum oxide film is formed by atomic deposition.

5. In claim 1 or claim 3, The method for processing an organic semiconductor layer, wherein the protective film is formed by vacuum deposition.

6. In claim 1 or claim 3, The method for processing an organic semiconductor layer, wherein the organometallic compound represented by the general formula (G1) is an organometallic compound represented by the following general formula (G2): 【Chemistry 2】 (In General Formula (G2), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; M represents a metal; n represents an integer of 1 to 3; and n is the same as the valence of the metal M. Note that when n is 2 or greater, the multiple Ars may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group and the metal M may form a coordinate bond.)

7. In claim 1 or claim 3, The method for processing an EL layer, wherein the organic semiconductor film is an EL film.

8. forming an organic semiconductor film on the first electrode; forming a protective film containing an organometallic compound represented by the following general formula (G1) on the organic semiconductor film; forming a first aluminum oxide film on the protective film; forming a metal film or metal compound film having a tensile stress of 1200 MPa or more and 1500 MPa or less on the first aluminum oxide film; forming a photomask on the metal film or the metal compound film; etching the metal film or the metal compound film using the photomask to form a metal layer or a metal compound layer overlapping the first electrode; removing the photomask; a step of etching the first aluminum oxide film, the protective film, and the organic semiconductor film using the metal layer or the metal compound layer as a mask to form an aluminum oxide layer, a protective layer, and an organic semiconductor layer; removing the metal layer or the metal compound layer; forming an organic resin film to cover the first electrode, the organic semiconductor layer, the protective layer, and the aluminum oxide layer; forming an opening in the organic resin film so as to overlap the first electrode, the organic semiconductor layer, the protective layer, and the aluminum oxide layer; and removing the protective layer and the aluminum oxide layer that overlap the opening. 【Transformation 3】 (In General Formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; X represents oxygen or sulfur; M represents a metal; n represents an integer of 1 to 5; and n is the same as the valence of the metal M. Note that when n is 2 or more, multiple Ars may be the same or different, and Xs may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group and the metal M may be coordinately bonded.)

9. In claim 1, The method for processing an organic semiconductor device includes forming the metal film or metal compound film by a sputtering method.

10. In claim 8, The method for manufacturing an organic semiconductor device, wherein water or a liquid containing water as a solvent is used in the step of removing the protective layer and the aluminum oxide layer that overlap the opening.

11. In claim 8 or claim 10, The method for producing an organic semiconductor device, wherein the organometallic compound represented by the general formula (G1) is an organometallic compound represented by the following general formula (G2): 【Chemistry 4】 (In General Formula (G2), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; M represents a metal; n represents an integer of 1 to 3; and n is the same as the valence of the metal M. Note that when n is 2 or greater, the multiple Ars may be the same or different. When Ar is a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group and the metal M may form a coordinate bond.)

12. In claim 8 or claim 10, The method for producing an organic semiconductor device includes forming the first aluminum oxide film by atomic layer deposition.

13. In claim 8 or claim 10, The method for producing an organic semiconductor device includes forming the protective film by vacuum deposition.

14. In claim 8 or claim 10, The method for producing an organic semiconductor device, wherein the organic semiconductor layer includes a photoelectric conversion layer.

15. In claim 8 or claim 10, The method for producing an organic semiconductor device, wherein the organic semiconductor layer is an EL layer.

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