Substrate processing device and substrate processing method

Abstract

To provide a technique of improving the in-plane uniformity of a substrate.SOLUTION: A substrate processing device in an embodiment includes a substrate holding part, a process liquid supply part, and a cover part. The substrate holding part holds a substrate horizontally and rotates the substrate. The process liquid supply part supplies a process liquid toward the substrate held by the substrate holding part. The cover part is provided so as to face the other surface of the substrate on the opposite side of one surface of the substrate held by the substrate holding part. The substrate holding part holds a lower surface of the substrate. The cover part includes a heater to heat the substrate. In the cover part, an opening part and a plurality of gas supply ports are formed. The opening part is formed at a position corresponding to a central part of the substrate. The gas supply ports supply gas to the other surface of the substrate on an outer peripheral side relative to the opening part. The gas is heated by the heater.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses supplying a processing liquid toward the rear surface of a substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-143790 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for improving the in-plane uniformity of a substrate. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding unit, a processing liquid supply unit, and a cover unit. The substrate holding unit holds a substrate horizontally and rotates the substrate. The processing liquid supply unit supplies processing liquid toward the substrate held by the substrate holding unit. The cover unit is provided to face the other side of the substrate opposite to the one side of the substrate held by the substrate holding unit. The substrate holding unit holds the underside of the substrate. The cover unit includes a heater for heating the substrate. An opening and multiple gas supply ports are formed in the cover unit. The opening is formed at a position corresponding to the center of the substrate. The multiple gas supply ports supply gas toward the other side of the substrate, on the outer periphery side of the opening. The gas is heated by the heater. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to improve the in-plane uniformity of the substrate. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to a first embodiment. [Figure 2] FIG. 2 is a schematic diagram showing the configuration of the processing unit according to the first embodiment. [Figure 3] FIG. 3 is a schematic diagram showing the arrangement of a pressure sensor and a plurality of temperature sensors in the processing unit according to the first embodiment. [Figure 4] FIG. 4 is a flowchart illustrating the substrate processing according to the first embodiment. [Figure 5] FIG. 5 is a flowchart illustrating the abnormality determination process according to the first embodiment. [Figure 6] FIG. 6 is a schematic diagram showing the configuration of a processing unit according to the second embodiment. [Figure 7] FIG. 7 is a diagram showing the supply direction (blowing direction) of N2 gas discharged from the third discharge port according to the second embodiment. [Figure 8] FIG. 8 is a schematic diagram showing the flow of the processing liquid, N2 gas, etc. in the processing unit according to the second embodiment. [Figure 9] FIG. 9 is a diagram showing the supply direction (blowing direction) of N2 gas discharged from the third discharge port according to a modified example of the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method disclosed herein will be described in detail with reference to the accompanying drawings. Note that the substrate processing apparatus and the substrate processing method disclosed below are not limited to the embodiments.

[0009] (First embodiment) <Outline of the substrate processing system> A schematic configuration of a substrate processing system 1 according to a first embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing the schematic configuration of the substrate processing system 1 according to the first embodiment. In the following, to clarify the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0010] 1, a substrate processing system 1 (an example of a substrate processing apparatus) includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0011] The loading / unloading station 2 includes a carrier placement section 11 and a transport section 12. On the carrier placement section 11, a plurality of carriers C are placed, each of which accommodates a plurality of substrates, in this embodiment, semiconductor wafers W (hereinafter referred to as wafers W), in a horizontal position.

[0012] The transfer section 12 is provided adjacent to the carrier placement section 11 and includes a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving horizontally and vertically and rotating about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism.

[0013] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15, a plurality of processing units 16, and two reversers (REV) 20. The plurality of processing units 16 are provided side by side on both sides of the transport section 15.

[0014] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0015] The processing unit 16 performs substrate processing on the wafer W transferred by the substrate transfer device 17. The processing unit 16 holds the transferred wafer W and performs substrate processing on the held wafer W. The processing unit 16 supplies a processing liquid to the held wafer W to perform substrate processing. The processing liquid is, for example, HF (hydrofluoric acid) or nitric acid (HNO3). The processing liquid may be SC1 (a mixture of ammonia, hydrogen peroxide, and water), or the like. The processing liquid may include DIW (deionized water). The processing liquid is set according to the type of film to be etched on the wafer W.

[0016] The reverser 20 is a reversing device that reverses the front and back surfaces of the wafer W. The wafer W placed on the reverser 20 is reversed so that one surface on which a pattern is formed is reversed to the other surface on which no pattern is formed.

[0017] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0018] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0019] <Processing unit overview> Next, an overview of the processing unit 16 will be described with reference to Fig. 2. Fig. 2 is a schematic diagram showing the configuration of the processing unit 16 according to the first embodiment.

[0020] The processing unit 16 includes a chamber 30 , a substrate holding mechanism 31 , a lifting mechanism 32 , a processing liquid supply mechanism 33 , a heating mechanism 34 , a gas supply mechanism 35 , a collection cup 36 , and an exhaust device 37 .

[0021] The chamber 30 accommodates a substrate holding mechanism 31, a part of a processing liquid supply mechanism 33, etc. An FFU (Fan Filter Unit) 38 is provided on the ceiling of the chamber 30. The FFU 38 forms a downflow within the chamber 30.

[0022] The substrate holding mechanism 31 includes a shaft portion 40, a base plate 41, and a rotation drive portion 42. The shaft portion 40 extends in the vertical direction. The shaft portion 40 is formed in a cylindrical shape.

[0023] The base plate 41 is provided at the upper end of the shaft portion 40. The base plate 41 is circular. The diameter of the base plate 41 is larger than the diameter of the shaft portion 40. The base plate 41 is formed concentrically with the shaft portion 40. A plurality of support pins 41a are provided on the upper surface of the base plate 41. The plurality of support pins 41a abut against the underside of the wafer W and support the wafer W. The wafer W is supported by the support pins 41a so that the surface on which the pattern is formed faces downward, i.e., the bottom surface.

[0024] A recess 41b is formed in the center of the top surface of the base plate 41. The horizontal cross section of the recess 41b is circular. An insertion hole 43 that communicates with the bottom surface of the recess 41b is formed in the base plate 41 and the shaft 40. The shaft 50 of the lifting mechanism 32 is inserted into the insertion hole 43.

[0025] The rotation drive unit 42 rotates the shaft unit 40. The rotation drive unit 42 includes a speed reduction mechanism, a motor, and the like. The rotation of the motor is transmitted to the shaft unit 40 via the speed reduction mechanism, and the like, causing the shaft unit 40 to rotate. The rotation of the shaft unit 40 causes the base plate 41 and the wafer W to rotate.

[0026] A downflow is formed by the FFU 38, and the inside of the chamber 30 is further evacuated by the exhaust device 37, which will be described later, thereby generating a negative pressure between the underside of the wafer W and the base plate 41. As a result, the wafer W is pressed against the support pins 41a, and the wafer W is held horizontally by the support pins 41a. As the shaft 40 rotates, the wafer W rotates integrally with the substrate holding mechanism 31. That is, the substrate holding mechanism 31 (an example of a substrate holding unit) holds the wafer W (an example of a substrate) horizontally and rotates the wafer W.

[0027] The method of holding the wafer W in the substrate holding mechanism 31 is not limited to the above method. The substrate holding mechanism 31 may hold the wafer W, for example, by a plurality of claws provided on the base plate 41. The plurality of claws are provided to hold the peripheral edge of the wafer W.

[0028] The lifting mechanism 32 includes a shaft 50, a lift plate 51, and a lifting drive unit 52. The shaft 50 extends in the vertical direction. The shaft 50 is inserted into an insertion hole 43 formed in the substrate holding mechanism 31.

[0029] The lift plate 51 is provided on the upper end of the shaft portion 50. The lift plate 51 is circular. The diameter of the lift plate 51 is larger than the diameter of the shaft portion 50. A transfer pin 51a is provided on the upper surface of the lift plate 51. The length of the transfer pin 51a is shorter than the length of the support pin 41a provided on the base plate 41.

[0030] The shaft 50 and the lift plate 51 are raised and lowered between a lowered position and an upper position by an elevation drive unit 52. The lowered position is a preset position where processing is performed on the wafer W. At the lowered position, the lift plate 51 is accommodated in the recess 41b of the base plate 41. The upper position is a preset position where the wafer W is loaded into or unloaded from the chamber 30. At the upper position, the wafer W is positioned above the collection cup 36.

[0031] A processing liquid supply pipe 62 of the processing liquid supply mechanism 33 is provided to the shaft portion 50 and the lift plate 51 .

[0032] The lifting / lowering drive unit 52 includes a speed reduction mechanism, a motor, etc. Rotation of the motor is transmitted to the shaft unit 50 via the speed reduction mechanism, etc., causing the shaft unit 50 and the lift plate 51 to move up and down. The lifting / lowering drive unit 52 may also be configured with a hydraulic pump, a hydraulic valve, a hydraulic cylinder, etc.

[0033] The processing liquid supply mechanism 33 includes a processing liquid supply source 60, a flow rate adjustment mechanism 61, and a processing liquid supply pipe 62. The processing liquid supply mechanism 33 supplies the processing liquid from the processing liquid supply source 60 to the wafer W. The processing liquid supply mechanism 33 may supply a plurality of processing liquids to the wafer W. Specifically, the processing liquid supply mechanism 33 (an example of a processing liquid supply unit) supplies the processing liquid toward one surface of the wafer W (an example of a substrate) held by the substrate holding mechanism 31 (an example of a substrate holding unit).

[0034] The flow rate adjustment mechanism 61 includes a flow rate adjustment valve, an on-off valve, a motor for operating each valve, etc. The processing liquid supply mechanism 33 may also include a heater for adjusting the temperature of the processing liquid, a pump for pressure-feeding the processing liquid, etc.

[0035] The processing liquid supply pipe 62 is provided on the shaft 50 of the lifting mechanism 32 and the lift plate 51. The processing liquid supply pipe 62 discharges the processing liquid toward the lower surface (one surface) of the wafer W from a supply port 62a formed at the upper end.

[0036] The heating mechanism 34 includes a cover portion 70, an arm 71, and a moving mechanism 72. The cover portion 70 is annular. An opening 70a is formed in the cover portion 70. The opening 70a is formed in the center of the cover portion 70. The opening 70a is formed at a position corresponding to the center of a wafer W (an example of a substrate). The outer diameter of the cover portion 70 is approximately the same as the diameter of the wafer W. The opening 70a may be formed by punching.

[0037] The cover part 70 is moved between the retracted position and the heating position by a moving mechanism 72 and an arm 71 .

[0038] The retracted position is a position that is set in advance. The retracted position is a position where the cover part 70 is not positioned above the wafer W and where the wafer W can be loaded into or unloaded from the chamber 30. The heating position is a position that is set in advance. The cover part 70 is positioned above the wafer W and where the distance between the wafer W and the cover part 70 is a given heating distance. The cover part 70 is arranged to face the upper surface (other surface) of the wafer W opposite the lower surface (one surface) of the wafer W at the heating position.

[0039] The cover part 70 includes a heater 73. The heater 73 is provided inside the cover part 70. The heater 73 heats the wafer W (an example of a substrate). The heater 73 is, for example, a sheath heater.

[0040] A reservoir 84 of the gas supply mechanism 35 is formed in the cover part 70. A plurality of discharge ports 82 (an example of a gas supply port) of the gas supply mechanism 35 are formed in the lower surface of the cover part 70.

[0041] The arm 71 is connected to the cover unit 70. The arm 71 is configured to be able to move the cover unit 70 between a retracted position and a heating position by a movement mechanism 72. The arm 71 is provided so as to be able to move up and down and rotate so that the cover unit 70 can move between the retracted position and the heating position. Note that the cover unit 70 does not rotate relative to the arm 71.

[0042] The movement mechanism 72 moves the arm 71 so that the cover part 70 can move between the retracted position and the heating position. The movement mechanism 72 includes a speed reduction mechanism, a motor, and the like.

[0043] The gas supply mechanism 35 includes an N2 gas supply source 80, a flow rate adjustment mechanism 81, a plurality of discharge ports 82, and a reservoir 84. The gas supply mechanism 35 supplies N2 gas toward the upper surface of the wafer W. The flow rate adjustment mechanism 81 includes a flow rate adjustment valve, an on-off valve, a motor for operating each valve, and the like.

[0044] The plurality of discharge ports 82 are formed in the cover portion 70. The plurality of discharge ports 82 supply N2 gas (an example of a gas) toward the upper surface (other surface) of the wafer W (an example of a substrate) on the outer periphery side of the opening 70a. The plurality of discharge ports 82 discharge the N2 gas from the storage portion 84 toward the wafer W. The outer periphery side means the outer side in the radial direction of the wafer W.

[0045] The plurality of outlets 82 include a first outlet 82a (an example of a first gas supply port) and a second outlet 82b (an example of a second gas supply port).

[0046] The first discharge ports 82a are provided on the opening 70a side. A plurality of first discharge ports 82a are provided. The plurality of first discharge ports 82a are formed, for example, at equal intervals along the circumferential direction of the cover portion 70.

[0047] The second discharge ports 82b are provided on the outer circumferential side of the first discharge ports 82a. A plurality of second discharge ports 82b are provided. The plurality of second discharge ports 82b are formed, for example, at equal intervals along the circumferential direction of the cover portion 70.

[0048] The storage portion 84 is formed in the cover portion 70. The storage portion 84 stores N2 gas (an example of a gas) supplied from an N2 gas supply source 80 (an example of a gas supply source). The storage portion 84 includes a first storage portion 84a and a second storage portion 84b. The N2 gas stored in the storage portion 84 is heated by the heater 73.

[0049] The first reservoir 84a is provided on the opening 70a side of the cover 70. The first reservoir 84a supplies N2 gas (an example of a gas) to the first discharge port 82a (an example of a first gas supply port). The N2 gas is supplied to the first reservoir 84a from a gas supply path 86 connected to the upper surface of the cover 70.

[0050] The first storage section 84a is a curved gas flow path. For example, a part of the cover section 70 is provided as a wall between adjacent gas flow paths. By providing the wall, the contact area between the N2 gas in the first storage section 84a and the cover section 70 increases, and the amount of heating of the N2 gas by the heater 73 increases.

[0051] The N2 gas heated in the first reservoir 84a is discharged toward the upper surface (other surface) of the wafer W from the first discharge port 82a.

[0052] The second storage section 84b is provided on the outer periphery side of the first storage section 84a. Similar to the first storage section 84a, the second storage section 84b is a curved gas flow path. The second storage section 84b supplies N2 gas (an example of a gas) to the second discharge port 82b (an example of a second gas supply port). The N2 gas is supplied to the second storage section 84b from the gas supply path 86.

[0053] The N2 gas heated in the second reservoir 84b is discharged toward the upper surface (other surface) of the wafer W from the second discharge port 82b.

[0054] The gas flow path of the first storage section 84a and the gas flow path of the second storage section 84b are set according to the amount of heat to be applied to the N2 gas in each of the storage sections 84a, 84b. By lengthening the gas flow path, the amount of heat applied by the heater 73 increases, and the temperature of the N2 gas increases. For example, by making the lengths of the gas flow paths in each of the storage sections 84a, 84b equal, the temperatures of the N2 gas discharged from each of the discharge ports 82a, 82b toward the wafer W become equal.

[0055] The collection cup 36 is provided to cover the periphery of the base plate 41. The collection cup 36 includes a first wall portion 90, a second wall portion 91, a ceiling portion 92, and a bottom portion 93. The first wall portion 90 is formed in an annular shape. The first wall portion 90 is formed outward from the base plate 41. The second wall portion 91 is formed inward from the first wall portion 90. The second wall portion 91 is formed so that the processing liquid does not flow inward from the second wall portion 91, but flows outward from the second wall portion 91.

[0056] The ceiling portion 92 is formed to protrude inward from the upper end of the first wall portion 90. An opening 92a is formed in the ceiling portion 92. The opening 92a is circular. The opening 92a is formed to allow the wafer W and the cover portion 70 to move up and down.

[0057] A processing liquid discharge pipe 100 and an exhaust pipe 101 are connected to the bottom 93. The processing liquid discharge pipe 100 is connected to the bottom 93 on the outer side of the second wall 91. The processing liquid discharge pipe 100 discharges the processing liquid used in processing the wafer W to the outside.

[0058] The exhaust pipe 101 is connected to the bottom 93, which is located more inward than the second wall portion 91. The exhaust pipe 101 is connected to the exhaust device 37. Note that a plurality of exhaust pipes 101 may be provided along the circumferential direction of the bottom 93 of the collection cup 36. For example, the plurality of exhaust pipes 101 are provided at equal intervals along the circumferential direction of the bottom 93.

[0059] The exhaust device 37 exhausts the gas inside the chamber 30 to the outside through an exhaust pipe 101. The exhaust device 37 includes a pump and the like.

[0060] Furthermore, the processing unit 16 includes a pressure sensor 110 and a plurality of temperature sensors 111a to 111c, as shown in Fig. 3. Fig. 3 is a schematic diagram showing the arrangement of the pressure sensor 110 and the plurality of temperature sensors 111a to 111c in the processing unit 16 according to the embodiment.

[0061] The pressure sensor 110 is provided at the lower end of the opening 70a formed in the cover part 70. The pressure sensor 110 (an example of a sensor) detects the inflow state of gas (fluid) from the opening 70a into the gap between the wafer W (an example of a substrate) and the cover part 70. Specifically, the pressure sensor 110 detects the pressure near the lower end of the opening 70a to detect the inflow state of air into the gap formed between the wafer W and the cover part 70.

[0062] The temperature sensors 111a to 111c are, for example, infrared temperature sensors. The temperature sensors 111a to 111c are provided along the radial direction of the cover portion 70. The temperature sensors 111a to 111c detect the temperature of the processing liquid on the surface of the wafer W (an example of a substrate).

[0063] The temperature sensor 111a (hereinafter referred to as "first temperature sensor 111a") is provided near the opening 70a and detects the temperature of the processing liquid on the lower surface of the wafer W near the opening 70a.

[0064] Temperature sensor 111b (hereinafter referred to as "second temperature sensor 111b") is provided closer to the outer periphery of cover part 70 than first temperature sensor 111a. Specifically, second temperature sensor 111b detects the temperature of the processing liquid on the underside of wafer W near first discharge port 82a.

[0065] Temperature sensor 111c (hereinafter referred to as "third temperature sensor 111c") is provided closer to the outer periphery of cover portion 70 than second temperature sensor 111b. Specifically, third temperature sensor 111c detects the temperature of the processing liquid on the underside of wafer W near second discharge port 82b.

[0066] It should be noted that a plurality of each of the temperature sensors 111a to 111c may be provided along the circumferential direction of the cover portion .

[0067] <Flow of gas and processing liquid> Next, the flow of gas and the flow of processing liquid in the processing unit 16 in the first embodiment will be described.

[0068] In the processing unit 16, film residues and reactants on the wafer W due to etching with the processing liquid may adhere to the wafer W as particles. Furthermore, the generated particles may be stirred up by vibrations of the processing unit 16 or the flow of gas, and may adhere to the wafer W. Therefore, in the processing unit 16, a downflow is formed by the FFU 38, which suppresses the adhesion of particles to the wafer W. Furthermore, the gas in the chamber 30 is exhausted by the exhaust device 37.

[0069] The formation of a downflow may lower the temperature of the wafer W. Furthermore, a swirling flow is generated by the rotation of the wafer W during processing, causing gas to flow from the center of the wafer W toward the outer periphery of the wafer W. As a result, the temperature of the outer periphery of the wafer W becomes lower than that of the center of the wafer W.

[0070] Furthermore, since the processing liquid is discharged from the supply port 62a of the processing liquid supply pipe 62 to the center of the wafer W and spreads toward the outer periphery of the wafer W as the wafer W rotates, the temperature of the outer periphery of the wafer W becomes lower than that of the center of the wafer W. This causes a temperature difference between the center of the wafer W and the outer periphery of the wafer W. If the temperature difference becomes large, a difference occurs in the processing reaction rate of the processing liquid, which may result in uneven etching.

[0071] The processing unit 16 has a cover part 70 disposed above the wafer W. This prevents particles from being kicked up. Furthermore, a swirling flow generated by the rotation of the wafer W flows through a gap formed between the upper surface of the wafer W and the cover part 70, thereby discharging particles to the outside of the wafer W.

[0072] By providing an opening 70a in the center of the cover part 70, air flows toward the center of the wafer W through the opening 70a, and a stable swirling flow flows in the gap formed between the upper surface of the wafer W and the cover part 70. Furthermore, by providing the opening 70a in the center of the cover part 70, an increase in negative pressure on the upper surface of the wafer W is suppressed. This prevents the central part of the wafer W from curving upward due to negative pressure, and suppresses contact between the cover part 70 and the wafer W.

[0073] The processing unit 16 heats the wafer W by a heater 73 provided in the cover part 70. Because an opening 70a is formed in the cover part 70, the heater 73 is not provided in the center of the cover part 70. Because the processing liquid is discharged from the underside of the wafer W onto the center of the wafer W facing the opening 70a of the cover part 70, the processing liquid brings the center of the wafer W to a temperature suitable for etching.

[0074] The processing unit 16 also discharges N2 gas heated by the heater 73 in a first reservoir 84a provided in the cover part 70 from the first discharge port 82a toward the upper surface of the wafer W. The processing unit 16 also discharges N2 gas heated by the heater 73 in a second reservoir 84b provided in the cover part 70 from the second discharge port 82b toward the upper surface of the wafer W.

[0075] The N2 gas discharged from the first discharge port 82a and the second discharge port 82b flows along the upper surface of the wafer W toward the outer periphery of the wafer W due to the rotation of the wafer W. The N2 gas discharged from the first discharge port 82a and the second discharge port 82b heats the wafer W.

[0076] The N2 gas discharged from the first discharge port 82a and the second discharge port 82b flows toward the outer periphery of the wafer W, thereby promoting the flow of air from the opening 70a into the gap formed between the upper surface of the wafer W and the cover part 70.

[0077] Therefore, for example, even if the rotation speed of the wafer W is low and the swirling flow generated by the rotation of the wafer W is small, the flow of air from the opening 70a into the gap formed between the upper surface of the wafer W and the cover part 70 is promoted, and air stagnation in the gap is suppressed.

[0078] <Substrate processing> Next, the substrate processing according to the first embodiment will be described with reference to Fig. 4. Fig. 4 is a flowchart illustrating the substrate processing according to the first embodiment.

[0079] The control device 4 performs a process of loading the wafer W (S100). Specifically, the wafer W is loaded into the chamber 30 by the transfer unit 15. Then, the wafer W is transferred from the transfer unit 15 to the lift plate 51, which is in the raised position. Note that the cover unit 70 is held in the retracted position.

[0080] After the wafer W is transferred to the lift plate 51, the lift plate 51 is lowered to the lowered position. As a result, the wafer W is transferred from the lift plate 51 to the base plate 41.

[0081] Furthermore, the cover part 70 moves from the retracted position to the heating position, whereby the cover part 70 is disposed on the upper surface of the wafer W.

[0082] The control device 4 performs a holding process for the wafer W (S101). The air inside the chamber 30 is discharged to the outside by the exhaust device 37. This generates a negative pressure on the lower surface of the wafer W, pressing the wafer W against the support pins 41a of the base plate 41, and the wafer W is held by the base plate 41.

[0083] The control device 4 performs an etching process on the wafer W (S102). Heating of the wafer W by the heater 73 begins, and the supply of N2 gas begins. The N2 gas is stored in the storage unit 84 from the N2 gas supply source 80 and heated by the heater 73. The heated N2 gas is discharged from the first discharge port 82a and the second discharge port 82b toward the top surface of the wafer W. The supply amount of N2 gas is adjusted based on the rotation speed of the wafer W. For example, as the rotation speed of the wafer W increases, the supply amount of N2 gas per unit time increases.

[0084] Furthermore, shaft 40 of substrate holding mechanism 31 is rotated by rotation drive unit 42, and wafer W rotates together with shaft 40 and base plate 41. Furthermore, processing liquid is supplied toward the underside of wafer W by processing liquid supply mechanism 33, and etching of the underside of wafer W begins.

[0085] The control device 4 controls the flow rate of N2 gas (an example of a gas) based on the rotation speed of the wafer W (an example of a substrate). Specifically, the control device 4 controls the flow rate of N2 gas (an example of a gas) based on the flow rate of the processing liquid, the temperature of the processing liquid, and the rotation speed of the wafer W. For example, the relationship between the flow rate of the processing liquid, the temperature of the processing liquid, the rotation speed of the wafer W, and the flow rate of N2 gas is determined by experiment or simulation, and stored in the storage unit 19 as a data table. Then, to perform the etching process, the flow rate of the processing liquid, the temperature of the processing liquid, and the rotation speed of the wafer W are set, and the flow rate of N2 gas corresponding to each set value is calculated, and the flow rate of N2 gas is controlled to the calculated flow rate. The data table is set according to the type of processing liquid. Instead of a data table, the control device 4 may store a relationship model between the flow rate of the processing liquid, the temperature of the processing liquid, the rotation speed of the wafer W, and the flow rate of N2 gas in the storage unit 19.

[0086] The control device 4 also controls the temperature of the heater 73 based on the flow rate of the processing liquid, the temperature of the processing liquid, and the rotation speed of the wafer W. For example, the relationships between the flow rate of the processing liquid, the temperature of the processing liquid, the rotation speed of the wafer W, and the temperature of the N2 gas are determined through experiments or simulations, and stored as a data table in the storage unit 19. Then, to perform the etching process, the flow rate of the processing liquid, the temperature of the processing liquid, and the rotation speed of the wafer W are set, and the temperature of the N2 gas corresponding to each set value is calculated, and the heater 73 is controlled so that the temperature of the N2 gas becomes the calculated temperature. The data table is set depending on the type of processing liquid. The control device 4 may store a relationship model between the flow rate of the processing liquid, the temperature of the processing liquid, the rotation speed of the wafer W, and the temperature of the N2 gas in the storage unit 19, instead of the data table.

[0087] The control device 4 performs an unloading process of the wafer W (S103). When the etching process is completed, the heating by the heater 73, the supply of N2 gas, and the supply of the processing liquid are stopped. Also, the exhaust device 37 stops discharging gas. Then, the cover unit 70 moves from the heating position to the retracted position. After the cover unit 70 has moved to the retracted position, the lift plate 51 moves from the lowered position to the raised position. As a result, the wafer W is transferred from the substrate holding mechanism 31 to the lift plate 51 and raised. Then, the wafer W is transferred from the lift plate 51 to the transfer unit 15 and is unloaded from the chamber 30 by the transfer unit 15.

[0088] <Abnormality detection process> Next, the abnormality determination process according to the first embodiment will be described with reference to Fig. 5. The abnormality determination process is executed during the etching process.

[0089] The controller 4 detects the pressure near the opening 70a of the cover part 70 using the pressure sensor 110 (S200). The controller 4 detects the temperature of the processing liquid on the lower surface of the wafer W using the temperature sensors 111a to 111c (S201).

[0090] The control device 4 determines whether the inflow state of gas from the opening 70a into the gap between the wafer W and the cover part 70 satisfies a given flow condition (S202). Specifically, if the detected pressure is equal to or less than the given pressure, the control device 4 determines that the inflow state satisfies the given flow condition. If the detected pressure is greater than the given pressure, the control device 4 determines that the inflow state does not satisfy the given flow condition. The given pressure is a preset negative pressure.

[0091] If the flow rate of the N2 gas discharged from the first discharge port 82a or the second discharge port 82b becomes large, there is a risk that the flow of gas from the center of the wafer W toward the outer periphery will be obstructed. When gas flows from the center of the wafer W toward the outer periphery through the gap between the wafer W and the cover part 70, the pressure near the opening 70a will be negative. On the other hand, when the flow of gas from the center of the wafer W toward the outer periphery is obstructed and gas does not flow from the center of the wafer W toward the outer periphery through the gap between the wafer W and the cover part 70, the pressure near the opening 70a will be the ambient air pressure or positive pressure.

[0092] If the detected pressure is equal to or lower than a given pressure, the control device 4 determines that the flow of gas from the center of the wafer W toward the outer periphery is not obstructed, and determines that the inflow state satisfies a given flow condition.

[0093] If the detected pressure is greater than the given pressure, the control device 4 determines that the flow of gas from the center of the wafer W toward the outer periphery is obstructed, and determines that the inflow state does not satisfy the given flow condition.

[0094] If the inflow state satisfies the given flow condition (S202: Yes), the control device 4 determines whether the temperature of the processing liquid on the underside of the wafer W satisfies the given temperature condition (S203). Specifically, the control device 4 determines that the temperature of the processing liquid satisfies the given temperature condition if the temperature difference between the highest and lowest temperatures among the detected temperatures is equal to or less than the given temperature difference. If the temperature difference is greater than the given temperature difference, the control device 4 determines that the temperature of the processing liquid does not satisfy the given temperature condition. The given temperature difference is a preset temperature difference that suppresses etching variations on the wafer W. In other words, the given temperature difference is a temperature difference that can maintain the in-plane etching uniformity on the wafer W at a preset uniformity.

[0095] If the temperature difference is equal to or less than the given temperature difference, the control device 4 determines that the temperature of the processing liquid satisfies the given temperature condition and that the etching variation is small. If the temperature difference is greater than the given temperature difference, the control device 4 determines that the temperature of the processing liquid does not satisfy the given temperature condition and that the etching variation is large.

[0096] If the temperature of the processing liquid satisfies the given temperature condition (S203: Yes), the control device 4 continues the etching process (S204). That is, if the inflow state satisfies the given inflow condition (S202: Yes) and the temperature of the processing liquid satisfies the given temperature condition (S203: No), the control device 4 continues the etching process (S204).

[0097] If the inflow state does not satisfy the given flow condition (S202: No), the controller 4 stops the etching process (S205). That is, if the inflow state does not satisfy the given flow condition, the controller 4 stops the etching process (an example of a process) on the wafer W (an example of a substrate).

[0098] If the temperature of the processing liquid does not satisfy the given temperature condition (S203: No), the controller 4 stops the etching process (S205). That is, if the processing liquid does not satisfy the given temperature condition, the controller 4 stops the etching process (an example of a process) on the wafer W (an example of a substrate).

[0099] <Effects> The substrate processing system 1 (an example of a substrate processing apparatus) includes a substrate holding mechanism 31 (an example of a substrate holding unit), a processing liquid supply mechanism 33 (an example of a processing liquid supply unit), and a cover unit 70. The substrate holding mechanism 31 horizontally holds a wafer W (an example of a substrate) and rotates the wafer W. The processing liquid supply mechanism 33 supplies a processing liquid toward the lower surface (one surface) of the wafer W held by the substrate holding mechanism 31. The cover unit 70 is provided to face the upper surface (other surface) of the wafer W opposite the lower surface. The cover unit 70 includes a heater 73 for heating the wafer W. The cover unit 70 has an opening 70a and multiple discharge ports 82 (an example of a gas supply port) formed therein. The opening 70a is formed at a position corresponding to the center of the wafer W. The multiple discharge ports 82 supply N2 gas (an example of a gas) toward the upper surface of the wafer W on the outer periphery side of the opening 70a. The N2 gas is heated by the heater 73. The supply amount of N2 gas is adjusted based on the rotation speed of the wafer W.

[0100] As a result, the substrate processing system 1 can supply N2 gas heated by the heater 73 toward the wafer W and heat the wafer W with the N2 gas. The supply amount of N2 gas is adjusted based on the rotation speed of the wafer W, so that the supply of N2 gas is prevented from interfering with the flow of gas from the opening 70a into the gap between the wafer W and the cover 70. Therefore, the supplied N2 gas flows from the center of the wafer W toward the outer periphery, preventing a decrease in the temperature of the outer periphery of the wafer W. Therefore, the substrate processing system 1 can improve the in-plane temperature uniformity of the wafer W and suppress etching variations in the wafer W.

[0101] The cover 70 includes a storage section 84. The storage section 84 stores gas supplied from an N2 gas supply source 80 (an example of a gas supply source).

[0102] As a result, the substrate processing system 1 can heat the N2 gas stored in the cover unit 70 using the heater 73. Therefore, the substrate processing system 1 can supply N2 gas with a stable temperature to the wafers W, and can stabilize the temperature of the wafers W. Therefore, the substrate processing system 1 can suppress variations in etching. Even when the number of wafers W processed per hour is increased, the substrate processing system 1 can stabilize the temperature of the wafers W by heating the N2 gas using the storage unit 84, and can improve processing efficiency.

[0103] The multiple discharge ports 82 (an example of a gas supply port) include a first discharge port 82a (an example of a first gas supply port) and a second discharge port 82b (an example of a second gas supply port). The first discharge port 82a is provided on the opening 70a side. The second discharge port 82b is provided on the outer circumferential side of the first discharge port 82a. The storage unit 84 includes a first storage unit 84a and a second storage unit 84b. The first storage unit 84a is provided on the opening 70a side and supplies N2 gas to the first discharge port 82a. The second storage unit 84b is provided on the outer circumferential side of the first storage unit 84a and supplies N2 gas to the second discharge port 82b.

[0104] As a result, the substrate processing system 1 can supply N2 gas to the wafer W from different outlets 82a, 82b in the radial direction of the wafer W, thereby reducing the temperature difference in the radial direction of the wafer W. Therefore, the substrate processing system 1 can improve the in-plane temperature uniformity of the wafer W, and suppress variations in etching of the wafer W.

[0105] The first storage section 84a and the second storage section 84b are curved gas flow paths.

[0106] This allows the substrate processing system 1 to increase the amount of heating of the N2 gas by the heater 73 in the first storage section 84a and the second storage section 84b, and to increase the temperature of the N2 gas supplied to the wafer W from the first discharge port 82a and the second discharge port 82b.

[0107] The substrate processing system 1 (an example of a substrate processing apparatus) includes a control device 4. The control device 4 controls the flow rate of N2 gas (an example of a gas) based on the rotation speed of a wafer W (an example of a substrate).

[0108] This allows the substrate processing system 1 to adjust the amount of heating of the wafer W by the N gas in accordance with the rotation speed of the wafer W. Therefore, the substrate processing system 1 can stabilize the temperature of the wafer W and suppress variations in etching of the wafer W.

[0109] The controller 4 controls the flow rate of the gas based on the flow rate of the processing liquid, the temperature of the processing liquid, and the rotation speed of the wafer W (an example of a substrate).

[0110] As a result, the substrate processing system 1 can stabilize the temperature of the wafer W and suppress variations in etching of the wafer W.

[0111] The controller 4 controls the temperature of the heater 73 based on the flow rate of the processing liquid, the temperature of the processing liquid, and the rotation speed of the substrate.

[0112] As a result, the substrate processing system 1 can stabilize the temperature of the wafer W and suppress variations in etching of the wafer W.

[0113] The substrate processing system 1 (an example of a substrate processing apparatus) includes a pressure sensor 110. The pressure sensor 110 detects the state of gas flowing from the opening 70a between the wafer W (an example of a substrate) and the cover part 70. If the state of gas flow does not satisfy a given fluid flow condition, the control device 4 stops the etching process (an example of a process) on the wafer W.

[0114] This allows the substrate processing system 1 to stop the etching process when an abnormality occurs in the flow of gas between the wafer W and the cover part 70.

[0115] The substrate processing system 1 (an example of a substrate processing apparatus) includes a plurality of temperature sensors 111a-111c. The plurality of temperature sensors 111a-111c detect the temperature of the processing liquid on the underside (one surface) of the wafer W (an example of a substrate). The control device 4 stops the etching process (an example of a process) on the wafer W when the temperature of the processing liquid does not satisfy a given temperature condition.

[0116] This allows the substrate processing system 1 to stop the etching process when an abnormality occurs in the temperature of the wafer W estimated from the temperature of the processing liquid.

[0117] (Second embodiment) Next, a processing unit 16 according to a second embodiment will be described with reference to Fig. 6. Fig. 6 is a schematic diagram showing the configuration of a processing unit 16 according to the second embodiment. Here, only the parts that are different from the first embodiment will be described, and the same components as in the first embodiment will be assigned the same reference numerals as in the first embodiment, and detailed description thereof will be omitted.

[0118] The plurality of outlets 82 formed in the cover portion 70 include a first outlet 82a, a second outlet 82b, and a third outlet 82c (an example of a third gas supply port).

[0119] The third discharge port 82c is provided on the outer periphery side of the second discharge port 82b. A plurality of third discharge ports 82c are provided. The plurality of third discharge ports 82c are formed, for example, at equal intervals along the circumferential direction of the cover portion 70. The third discharge port 82c supplies N2 gas (an example of a gas) obliquely toward the edge of the wafer W (an example of a substrate). The oblique direction is a direction inclined from the inside to the outside in the radial direction of the wafer W, as shown in FIG. 7. That is, the third discharge port 82c is provided to discharge N2 gas from the inside to the outside in the radial direction of the wafer W. FIG. 7 is a diagram showing the supply direction (blowing direction) of N2 gas discharged from the third discharge port 82c according to the second embodiment.

[0120] The supply amount of N2 gas supplied from the third outlet 82c is set regardless of the rotation speed of the wafer W. For example, the supply amount of N2 gas supplied from the third outlet 82c is a predetermined supply amount. The supply amount of N2 gas supplied from the third outlet 82c may be adjusted based on the rotation speed of the wafer W. That is, the supply amount of at least a portion of the N2 gas discharged from the plurality of outlets 82 is adjusted based on the rotation speed of the wafer W.

[0121] Returning to FIG. 6, the reservoir 84 formed in the cover portion 70 includes a first reservoir 84a, a second reservoir 84b, and a third reservoir 84c.

[0122] The third storage section 84c is provided on the outer periphery side of the second storage section 84b. The third storage section 84c is a curved gas flow path, similar to the first storage section 84 and the second storage section 84b. The third storage section 84c supplies N2 gas (an example of a gas) to the third discharge port 82c (an example of a third gas supply port). The N2 gas is supplied to the third storage section 84c from the gas supply path 86. The N2 gas (an example of a gas) stored in the third storage section 84c is heated by the heater 73.

[0123] The N2 gas heated in the third storage section 84c is discharged from the third discharge port 82c toward the upper surface (other side) of the wafer W. The gas flow path of the third storage section 84c is set according to the amount of heating of the N2 gas in the third storage section 84c. For example, by making the lengths of the gas flow paths in the storage sections 84a to 84c equal, the temperatures of the N2 gas discharged from the discharge ports 82a to 82c toward the wafer W become equal.

[0124] 8, in the processing unit 16, N2 gas is discharged obliquely from the third discharge port 82c toward the edge of the wafer W, thereby preventing the processing liquid from flowing around to the upper surface side of the wafer W. Fig. 8 is a schematic diagram showing the flow of the processing liquid, N2 gas, etc. in the processing unit 16 according to the second embodiment.

[0125] In the substrate processing system 1, the plurality of outlets 82 (an example of a gas supply port) includes a third outlet 82c (an example of a third gas supply port). The third outlet 82c is provided on the outer periphery side of the second outlet 82b (an example of a second gas supply port).

[0126] This allows the substrate processing system 1 to prevent the processing liquid from flowing around onto the upper surface of the wafer W due to the N2 gas discharged from the third discharge port 82c.

[0127] The third discharge port 82c supplies N2 gas (an example of gas) in an oblique direction toward the edge of the wafer W. The oblique direction is a direction inclined from the inside to the outside in the radial direction of the wafer W.

[0128] This allows the substrate processing system 1 to prevent the processing liquid from flowing around onto the upper surface of the wafer W due to the N2 gas discharged from the third discharge port 82c.

[0129] The reservoir 84 includes a third reservoir 84c. The third reservoir 84c is provided on the outer circumferential side of the second reservoir 84b and supplies N2 gas to the third outlet 82c. The N2 gas stored in the third reservoir 84c is heated by the heater 73.

[0130] As a result, the substrate processing system 1 can heat the N2 gas supplied from the third discharge port 82c toward the wafer W, and can prevent the temperature of the edge of the wafer W from decreasing. The substrate processing system 1 can reduce the temperature difference in the radial direction of the wafer W. Therefore, the substrate processing system 1 can improve the in-plane temperature uniformity of the wafer W, and can suppress etching variations on the wafer W.

[0131] The third storage section 84c is a curved gas flow path.

[0132] This allows the substrate processing system 1 to increase the amount of heating of the N2 gas by the heater 73 in the third reservoir 84c, and increase the temperature of the N2 gas supplied to the wafer W from the third outlet 82c.

[0133] 9, the oblique direction in which N2 gas (an example of a gas) is supplied from the third discharge port 82c (an example of a third gas supply port) may be a direction inclined toward the rotation direction of the wafer W. That is, the third discharge port 82c is provided so as to discharge the N2 gas along the rotation direction of the wafer W. FIG. 9 is a diagram showing the supply direction (blowing direction) of the N2 gas discharged from the third discharge port 82c according to a modified example of the second embodiment.

[0134] This allows the substrate processing system 1 to prevent the processing liquid from flowing around onto the upper surface of the wafer W due to the N2 gas discharged from the third discharge port 82c.

[0135] The third reservoir 84c may be shared with the second reservoir 84b. That is, the second reservoir 84b supplies N2 gas (an example of a gas) to the third discharge port 82c (an example of a third gas supply port).

[0136] This allows the substrate processing system 1 to simplify the configuration of the reservoir 84 formed in the cover .

[0137] <Modification> In the cover section 70 of the substrate processing system 1 according to the modified example, the heater 73 may be provided closer to the wafer W (an example of a substrate) than the storage section 84. That is, the storage section 84 may be formed above the heater 73. This allows the substrate processing apparatus according to the modified example to reduce uneven heating of the wafer W by the heater 73. The storage section 84 is formed above or below the heater 73.

[0138] In the substrate processing system 1 according to the modified example, the reservoir 84 may be formed above and below the heater 73. N2 gas is supplied from the N2 gas supply source 80 to the reservoir 84 formed above the heater 73. The N2 gas is then supplied from the reservoir 84 formed above the heater 73 to the reservoir 84 formed below the heater 73, and then supplied from the reservoir 84 formed below the heater 73 toward the wafer W. When the reservoirs 84 are formed above and below the heater 73, the N2 gas is preheated by the reservoir 84 formed above the heater 73. Therefore, the substrate processing system 1 according to the modified example can prevent low-temperature N2 gas from being discharged toward the wafer W. Furthermore, the substrate processing system 1 according to the modified example can prevent the temperature of the N2 gas from decreasing even when the number of processed wafers W increases. Therefore, the substrate processing system 1 according to the modified example can improve the processing efficiency of the wafer W.

[0139] The cover unit 70 of the substrate processing system 1 according to the modified example may discharge N2 gas toward the upper surface of the wafer W through a nozzle.

[0140] The cover unit 70 of the substrate processing system 1 according to the modified example may discharge N2 gas toward the wafer W in an oblique direction.

[0141] For example, the first discharge port 82a and the second discharge port 82b may discharge the N2 gas obliquely downward toward the outer periphery of the wafer W. This allows the substrate processing system 1 according to the modified example to prevent the N2 gas from accumulating in the gap between the wafer W and the cover part 70.

[0142] Furthermore, for example, the first discharge port 82a and the second discharge port 82b may discharge the N2 gas obliquely downward toward the center of the wafer W. This allows the substrate processing system 1 according to the modified example to extend the time during which the N2 gas is present between the wafer W and the cover unit 70, and to reduce the flow rate of the N2 gas used to heat the wafer W.

[0143] The N2 gas may be supplied to the reservoir 84 of the cover 70 when the etching process is not being performed. In this case, the flow rate of the N2 gas is lower than when the etching process is being performed.

[0144] In the substrate processing system 1 according to the modified example, the flow rates per unit time of the N2 gas discharged from the first discharge port 82a and the second discharge port 82b may be different.

[0145] For example, the flow rate per unit time of the N2 gas discharged from the first discharge port 82a is greater than the flow rate per unit time of the N2 gas discharged from the second discharge port 82b. As a result, the substrate processing system 1 according to the modified example can heat the wafer W with the N2 gas discharged from the first discharge port 82a, which has a long distance to the outer peripheral edge of the wafer W, and can improve the in-plane temperature uniformity of the entire wafer W.

[0146] For example, the flow rate per unit time of the N2 gas discharged from the second discharge port 82b may be greater than the flow rate per unit time of the N2 gas discharged from the first discharge port 82a, thereby enabling the substrate processing system 1 according to the modified example to promote etching on the outer periphery of the wafer W.

[0147] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0148] 1. Substrate processing system (substrate processing equipment) 4. Control device 16 Processing Unit 30 Chambers 31 Board holding mechanism (board holding part) 33 Processing liquid supply mechanism (processing liquid supply unit) 34 Heating mechanism 35 Gas supply mechanism 37 Exhaust system 70 Cover 70a opening 73 Heater 82 Outlet (gas supply port) 82a First outlet (first gas supply port) 82b Second outlet (second gas supply port) 82c Third outlet (third gas supply port) 84 Storage section 84a First storage section 84b Second storage section 84c Third Reservoir 110 Pressure sensor (sensor) 111a Temperature Sensor 111b Temperature Sensor 111c temperature sensor W wafer (substrate)

Claims

1. a substrate holder that holds the substrate horizontally and rotates the substrate; a processing liquid supply unit that supplies a processing liquid toward the substrate held by the substrate holder; a cover portion provided to face the other surface of the substrate opposite to the one surface of the substrate held by the substrate holding portion; Equipped with the substrate holder holds a lower surface of the substrate, the cover portion includes a heater that heats the substrate; The cover portion has an opening is formed at a position corresponding to the center of the substrate; a plurality of gas supply ports for supplying gas toward the other surface of the substrate are formed on the outer periphery side of the opening, The gas is heated by the heater. Substrate processing equipment.

2. A moving mechanism capable of raising and lowering the cover portion The substrate processing apparatus of claim 1 , comprising:

3. a storage portion for storing the gas supplied from a gas supply source is formed in the cover portion; the reservoir is formed above or below the heater; The gas stored in the storage section is heated by the heater. The substrate processing apparatus according to claim 1 .

4. The plurality of gas supply ports include: a first gas supply port provided on the opening side; a second gas supply port provided on the outer circumferential side of the first gas supply port; Including, The storage section is a first reservoir provided on the opening side and configured to supply the gas to the first gas supply port; a second storage section that is provided on the outer circumferential side of the first storage section and that supplies the gas to the second gas supply port; Including, The substrate processing apparatus according to claim 3 .

5. The first storage section and the second storage section are curved gas flow paths. The substrate processing apparatus according to claim 4 .

6. The plurality of gas supply ports include: a third gas supply port provided on an outer circumferential side of the second gas supply port; The substrate processing apparatus according to claim 4 or 5.

7. the third gas supply port supplies the gas obliquely toward an edge of the substrate; the oblique direction is a direction inclined from the inside to the outside in the radial direction of the substrate; The substrate processing apparatus according to claim 6 .

8. the third gas supply port supplies the gas obliquely toward an edge of the substrate; the oblique direction is a direction inclined toward a rotation direction of the substrate; The substrate processing apparatus according to claim 6 .

9. the storage section includes a third storage section that is provided on an outer circumferential side of the second storage section and that supplies the gas to the third gas supply port, The gas stored in the third storage section is heated by the heater. The substrate processing apparatus according to any one of claims 6 to 8.

10. The third storage section is a curved gas flow path. The substrate processing apparatus according to claim 9 .

11. the second storage section supplies the gas to the third gas supply port; The substrate processing apparatus according to any one of claims 6 to 8.

12. a control device for controlling the flow rate of the gas based on the rotation speed of the substrate; The substrate processing apparatus according to any one of claims 1 to 11.

13. the control device controls the flow rate of the gas based on the flow rate of the processing liquid, the temperature of the processing liquid, and the rotation speed of the substrate. The substrate processing apparatus according to claim 12 .

14. The control device controls the temperature of the heater based on the flow rate of the processing liquid, the temperature of the processing liquid, and the rotation speed of the substrate. The substrate processing apparatus according to claim 12 or 13.

15. a sensor for detecting an inflow state of gas from the opening into the gap between the substrate and the cover, The controller stops processing the substrate if the inflow conditions do not meet a given flow condition. The substrate processing apparatus according to any one of claims 12 to 14.

16. a plurality of temperature sensors for detecting the temperature of the processing liquid on the surface of the substrate; The control device stops processing the substrate when the temperature of the processing liquid does not satisfy a given temperature condition. The substrate processing apparatus according to any one of claims 12 to 15.

17. supplying a processing liquid toward the substrate held and rotated by the substrate holder; heating the substrate by a heater of a cover part provided to face the other surface of the substrate opposite to the one surface of the substrate held by the substrate holder; supplying a gas toward the other surface of the substrate from a gas supply port provided on the outer periphery side of the opening of the cover portion; and the substrate holder holds a lower surface of the substrate, The gas is heated by the heater. Substrate processing method.

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