Dielectric substrate and method for forming same

Abstract

The present disclosure relates to a dielectric composite comprising a dielectric substrate overlying a reinforcing fabric layer. The dielectric substrate may include a resin matrix component and a ceramic filler component. The ceramic filler component may include a first filler material having a particle size distribution of at least about 1.0 micron and no greater than about 1.7 microns. 10 and D of at least about 1.0 micron and not more than about 3.5 microns. 50 and D of at least about 2.7 microns and not more than about 6 microns. 90 and

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE The present disclosure relates to dielectric substrates and methods of forming the same, and in particular to dielectric substrates for use in copper clad laminate constructions and methods of forming the same. [Background technology]

[0002] Copper clad laminates (CCLs) contain a dielectric material laminated on or between two layers of conductive copper foil. Subsequent operations convert such CCLs into printed circuit boards (PCBs). When used to form PCBs, the conductive copper foil is selectively etched to form circuits with through holes between the layers, and then metallized, or plated, to establish electrical conductivity between the layers of a multilayer PCB. CCLs must therefore exhibit excellent thermomechanical stability. PCBs are routinely exposed to excessively high temperatures during manufacturing operations such as soldering, and also during use. They must therefore function without deformation at continuous temperatures above 200°C, withstand rapid temperature fluctuations, and prevent moisture absorption. The dielectric layers of CCLs act as spacers between conductive layers, blocking electrical conductivity and thus minimizing electrical signal loss and crosstalk. The lower the permittivity (dielectric constant) of a dielectric layer, the faster the electrical signal will travel through that layer. Therefore, a low dissipation factor, which depends on temperature and frequency, and the polarizability of the material, is very important for high frequency applications. Therefore, there is a need for improved dielectric materials and dielectric layers that can be used in PCBs and other high frequency applications. Summary of the Invention

[0003] According to a first aspect, a dielectric composite may include a dielectric substrate overlying a reinforcing fabric layer. The dielectric substrate may include a resin matrix component and a ceramic filler component. The ceramic filler component may include a first filler material. The particle size distribution of the first filler material may be D 10 is at least about 0.5 microns and not more than about 1.6; 50is at least about 0.8 microns and not more than about 2.7 microns, and D 90 may be at least about 1.5 microns and not more than about 4.7 microns.

[0004] According to another aspect, the dielectric composite can include a dielectric substrate overlying the reinforcing fabric layer. The dielectric substrate can include a resin matrix component and a ceramic filler component. The ceramic filler component can include a first filler material. The first filler material can further include a mean particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 / D 50 ), and D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 Equivalent to particle size distribution measurement.

[0005] According to yet another aspect, the dielectric composite can include a dielectric substrate overlying the reinforcing fabric layer. The dielectric substrate can include a resin matrix component and a ceramic filler component. The ceramic filler component can include a first filler material. The first filler material can further include a filler having an average particle size of about 10 microns or less and an average surface area of ​​about 8.0 m. 2 / g or less.

[0006] According to another aspect, a copper clad laminate can include a copper foil layer and a dielectric composite covering the copper foil layer. The dielectric composite can include a dielectric substrate covering the reinforcing fabric layer. The dielectric substrate can include a resin matrix component and a ceramic filler component. The ceramic filler component can include a first filler material, which can include silica. The particle size distribution of the first filler material can be D 10 is at least about 0.5 microns and is not greater than about 1.6;50 is at least about 0.8 microns and not more than about 2.7 microns, and D 90 may be at least about 1.5 microns and not more than about 4.7 microns.

[0007] According to yet another aspect, a copper clad laminate can include a copper foil layer and a dielectric composite overlying the copper foil layer. The dielectric composite can include a dielectric substrate overlying the reinforcing fabric layer. The dielectric substrate can include a resin matrix component and a ceramic filler component. The ceramic filler component can include a first filler material. The first filler material can further include an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 / D 50 ), and D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 Equivalent to particle size distribution measurement.

[0008] According to yet another aspect, a copper clad laminate can include a copper foil layer and a dielectric composite overlying the copper foil layer. The dielectric composite can include a dielectric substrate overlying the reinforcing fabric layer. The dielectric substrate can include a resin matrix component and a ceramic filler component. The ceramic filler component can include a first filler material. The first filler material can further include a ceramic filler material having an average particle size of about 10 microns or less and an average surface area of ​​about 8.0 m. 2 / g or less.

[0009] According to another aspect, a method of forming a dielectric composite may include providing a reinforcing fabric layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric substrate. The ceramic filler precursor component may include a first filler precursor material. The particle size distribution of the first filler material may be D 10 is at least about 0.5 microns and is not greater than about 1.6; 50 is at least about 0.8 microns and not more than about 2.7 microns, and D 90 may be at least about 1.5 microns and not more than about 4.7 microns.

[0010] According to another aspect, a method of forming a dielectric composite may include providing a reinforcing fabric layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric substrate. The ceramic filler precursor component may include a first filler precursor material. The first filler precursor material may further have an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 / D 50 ), and D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 Equivalent to particle size distribution measurement.

[0011] According to yet another embodiment, a method of forming a dielectric composite may include providing a reinforcing fabric layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric substrate. The ceramic filler precursor component may include a first filler precursor material. The first filler material may further include a filler having an average particle size of about 10 microns or less and an average surface area of ​​about 8.0 m. 2 / g or less.

[0012] According to another embodiment, a method of forming a copper clad laminate may include providing a copper foil layer, providing a reinforcing fabric layer overlying the copper foil layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture on a dielectric substrate overlying the reinforcing fabric layer. The ceramic filler precursor component may include a first filler precursor material. The particle size distribution of the first filler material may be D 10 is at least about 0.5 microns and is not greater than about 1.6; 50 is at least about 0.8 microns and not more than about 2.7 microns, and D 90 may be at least about 1.5 microns and not more than about 4.7 microns.

[0013] According to yet another embodiment, a method of forming a copper clad laminate may include providing a copper foil layer, providing a reinforcing fabric layer overlying the copper foil layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric substrate overlying the reinforcing fabric layer. The ceramic filler precursor component may include a first filler precursor material. The first filler precursor material may further include a filler having an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 / D 50 ), and D 90 is the D of the first filler precursor material 90D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 Equivalent to particle size distribution measurement.

[0014] According to yet another embodiment, a method of forming a copper clad laminate may include providing a copper foil layer, providing a reinforcing fabric layer overlying the copper foil layer, combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and forming the forming mixture into a dielectric substrate overlying the reinforcing fabric layer. The ceramic filler precursor component may include a first filler precursor material. The first filler material may further include a filler having an average particle size of about 10 microns or less and an average surface area of ​​about 8.0 m. 2 / g or less. [Brief description of the drawings]

[0015] Embodiments are illustrated by way of example and not limitation in the accompanying figures.

[0016] [Figure 1] FIG. 1 includes a diagram illustrating a method of forming a dielectric layer in accordance with embodiments described herein.

[0017] [Diagram 2] FIG. 2 includes a diagram illustrating the configuration of a dielectric layer formed in accordance with embodiments described herein.

[0018] [Diagram 3] FIG. 3 includes a diagram illustrating a method of forming a copper clad laminate in accordance with embodiments described herein.

[0019] [Figure 4] FIG. 4 includes diagrams illustrating the configuration of copper clad laminates formed in accordance with embodiments described herein.

[0020] [Diagram 5]FIG. 5 includes diagrams illustrating a method of forming a printed circuit board in accordance with embodiments described herein.

[0021] [Figure 6] FIG. 6 includes diagrams illustrating configurations of printed circuit boards formed in accordance with embodiments described herein.

[0022] Skilled artisans will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] The following discussion focuses on specific implementations and embodiments of the teachings. The detailed description is provided to help explain the specific embodiments and should not be construed as a limitation on the scope or applicability of the disclosure or teachings. It will be understood that other embodiments can be used based on the disclosure and teachings provided herein.

[0024] The terms "comprises," "comprising," "includes," "including," "has," "having," or any other variations thereof, are intended to cover non-exclusive inclusions. For example, a method, article, or apparatus that includes a list of features is not necessarily limited to only those features, but may include other features not expressly listed or that are inherent to such method, article, or apparatus. Further, unless expressly stated to the contrary, "or" refers to an inclusive or, not an exclusive or. For example, a condition A or B is satisfied by any one of the following: A is true (or present) and B is false (or absent), A is false (or absent) and B is true (or present), and both A and B are true (or present).

[0025] Also, the use of "a" or "an" is used to describe elements and components described herein. This is done merely for convenience and to give a general sense of the scope of the invention. This description should be understood as one, at least one, or the singular as including the plural, or vice versa, unless it is clear that it means otherwise. For example, where a single item is described herein, two or more items can be used in place of the single item. Similarly, where two or more items are described herein, the two or more items can be replaced with a single item.

[0026] SUMMARY OF THE DISCLOSURE The embodiments described herein generally relate to dielectric substrates that may include a resin matrix component and a ceramic filler component.

[0027] Turning first to a method of forming a dielectric substrate, Figure 1 includes a diagram illustrating a forming method 100 for forming a dielectric composite according to embodiments described herein. According to certain embodiments, the forming method 100 can include a first step 110 of providing a reinforcing fabric layer, a second step 120 of combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and a third step 130 of forming the forming mixture into a dielectric substrate.

[0028] According to certain embodiments, the ceramic filler precursor components may include a first filler precursor material that may have particular properties that enhance the performance of the dielectric composite formed by the forming method 100.

[0029] Referring first to the first step 110, according to certain embodiments, the reinforcing fabric layer may include a glass fabric material. According to yet other embodiments, the reinforcing fabric layer may include an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or any combination thereof. According to yet other embodiments, the reinforcing fabric layer may include a woven fabric or a fibrous material. According to yet other embodiments, the fibrous material may include an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or any combination thereof. According to yet other embodiments, the reinforcing fabric layer may include a non-woven fabric of a fibrous material. According to yet other embodiments, the fiber material may include E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

[0030] According to yet other embodiments, the reinforcing fabric layer may have a particular thickness. For example, the reinforcing fabric layer may have a thickness of at least about 4 microns, such as at least about 5 microns, or at least about 6 microns, or at least about 7 microns, or at least about 8 microns, or at least about 9 microns, or at least about 10 microns, or at least about 11 microns, or at least about 12 microns. According to yet other embodiments, the thickness of the reinforcing fabric layer may be about 1000 microns or less, such as about 900 microns or less, or about 800 microns or less, or about 700 microns or less, or about 600 microns or less, or about 500 microns or less, or about 400 microns or less, or about 300 microns or less, or about 200 microns or less. It will be understood that the thickness of the reinforcing fabric layer may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the thickness of the reinforcing fabric layer may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0031] According to certain embodiments, the first filler precursor material may have a particular particle size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler precursor material, is referred to as the particle size distribution D value, D 10 , D 50 , and D. 90 Any combination of the above can be used to describe the particle size distribution. 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90 A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, measurements of particle size for a particular material are made using laser diffraction spectroscopy.

[0032] According to a particular embodiment, the first filler precursor material is a filler having a particular particle size distribution D 10 For example, the D of the first filler precursor material may have a value of 10 may be at least about 0.5 microns, e.g., at least about 0.6 microns, or at least about 0.7 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns. According to yet other embodiments, the D of the first filler material 10 may be about 1.6 microns or less, such as about 1.5 microns or less, or about 1.4 microns or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0033] According to another embodiment, the first filler precursor material is a D 50 For example, the D of the first filler precursor material may have a value of 50 may be at least about 0.8 microns, e.g., at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns, or at least about 1.3 microns, or at least about 1.4 microns, or at least about 1.5 microns, or at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns. According to yet another embodiment, the D of the first filler material 50is about 2.7 microns or less, for example, about 2.6 microns or less, or about 2.5 microns or less, or about 2.4 microns or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0034] According to another embodiment, the first filler precursor material is a D 90 For example, the D of the first filler precursor material may have a value of 90 may be at least about 1.5 microns, e.g., at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns, or at least about 2.3 microns, or at least about 2.4 microns, or at least about 2.5 microns, or at least about 2.6 microns, or at least about 2.7 microns. According to yet other embodiments, the D of the first filler material 90 may be about 8.0 microns or less, for example, about 7.5 microns or less, or about 7.0 microns or less, or about 6.5 microns or less, or about 6.0 microns or less, or about 5.5 microns or less, or about 5.4 microns or less, or about 5.3 microns or less, or about 5.2 microns or less, or about 5.1 microns or less. 90 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0035] According to yet another embodiment, the first filler precursor material may have a particular average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the first filler precursor material may be about 10 microns or less, such as about 9 microns or less, or about 8 microns or less, or about 7 microns or less, or about 6 microns or less, or about 5 microns or less, or about 4 microns or less, or about 3 microns or less, or about 2 microns or less. It will be understood that the average particle size of the first filler precursor material may be any value between and including any of the values ​​above. It will be further understood that the average particle size of the first filler precursor material may be within a range between and including any of the values ​​above.

[0036] According to yet another embodiment, the first filler precursor material can be described as having a particular particle size distribution span (PSDS), the PSDS being (D 90 -D 10 / D 50 ), and D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 Equal to the particle size distribution measurement, and D 50 is the D of the first filler precursor material 50 It is equal to a particle size distribution measurement. For example, the PSDS of the first filler precursor material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or about 2.5 or less. It will be understood that the PSDS of the first filler precursor material may be any value between and including any of the values ​​recited above. It will be further understood that the PSDS of the first filler precursor material may be within a range between and including any of the values ​​recited above.

[0037] According to yet other embodiments, the first filler precursor material may be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the average surface area of ​​the first filler precursor material may be about 8 m. 2 / g or less, for example, about 7.9m 2 / g or less, or about 7.5m 2 / g or less, or 7.0m 2 / g, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or about 3.5m 2 According to yet another embodiment, the first filler precursor material may have an average surface area of ​​at least about 1.2 m / g or less. 2 / g, e.g., at least about 2.2m 2 / g. It will be understood that the average surface area of ​​the first filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average surface area of ​​the first filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0038] According to other embodiments, the first filler precursor material can include a particular material. According to certain embodiments, the first filler precursor material can include a silica-based compound. According to yet other embodiments, the first filler precursor material can be comprised of a silica-based compound. According to other embodiments, the first filler precursor material can include silica. According to yet other embodiments, the first filler precursor material can be comprised of silica.

[0039] According to yet another embodiment, the forming mixture may include a particular content of the ceramic filler precursor component. For example, the content of the ceramic filler precursor component may be at least about 45 volume percent, such as at least about 46 volume percent, or at least about 47 volume percent, or at least about 48 volume percent, or at least about 49 volume percent, or at least about 50 volume percent, or at least about 51 volume percent, or at least about 52 volume percent, or at least about 53 volume percent, or at least about 54 volume percent, based on the total volume of the forming mixture. According to yet another embodiment, the content of the ceramic filler precursor component may be about 57 volume percent or less, such as about 56 volume percent or less, or about 55 volume percent or less, based on the total volume of the forming mixture. It will be understood that the content of the ceramic filler precursor component may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the ceramic filler precursor component may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0040] According to yet another embodiment, the ceramic filler precursor component may include a certain content of the first filler precursor material. For example, the content of the first filler precursor material may be at least about 80 volume % based on the total volume of the ceramic filler precursor component, such as at least about 81 volume %, or at least about 82 volume %, or at least about 83 volume %, or at least about 84 volume %, or at least about 85 volume %, or at least about 86 volume %, or at least about 87 volume %, or at least about 88 volume %, or at least about 89 volume %, or at least about 90 volume %. According to yet another embodiment, the content of the first filler precursor material may be about 100 volume % or less based on the total volume of the ceramic filler precursor component, such as about 99 volume % or less, or about 98 volume % or less, or about 97 volume % or less, or about 96 volume % or less, or about 95 volume % or less, or about 94 volume % or less, or about 93 volume % or less, or about 92 volume % or less. It will be appreciated that the content of the first filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​set forth above. It will be further appreciated that the content of the first filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​set forth above.

[0041] According to yet other embodiments, the ceramic filler precursor component may include a second filler precursor material.

[0042] According to yet another embodiment, the second filler precursor material can include a specific material. For example, the second filler precursor material can include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the second filler precursor material can include a high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0043] According to yet another embodiment, the second filler precursor material can include TiO2. According to yet another embodiment, the second filler precursor material can consist of TiO2.

[0044] According to yet another embodiment, the ceramic filler precursor component may include a certain content of the second filler precursor material. For example, the content of the second filler precursor material may be at least about 1 vol.%, for example, at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.% based on the total volume of the ceramic filler precursor component. According to yet another embodiment, the content of the second filler precursor material may be about 20 vol.% or less, for example, about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less based on the total volume of the ceramic filler precursor component. It will be understood that the content of the second filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the second filler precursor material may be within a range between and including any of the minimum and maximum values ​​set forth above.

[0045] According to yet another embodiment, the ceramic filler precursor component may include a specific content of amorphous material. For example, the ceramic filler precursor component may include at least about 97% amorphous material, such as at least about 98%, or at least about 99% amorphous material. It will be understood that the content of amorphous material may be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material may be within a range between and including any of the values ​​recited above. According to another embodiment, the resin matrix precursor component may include a specific material. For example, the resin matrix precursor component may include a perfluoropolymer. According to yet another embodiment, the resin matrix precursor component may be composed of a perfluoropolymer.

[0046] According to yet another embodiment, the perfluoropolymer of the resin matrix precursor component may include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to another embodiment, the perfluoropolymer of the resin matrix precursor component may be composed of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0047] According to yet another embodiment, the perfluoropolymer of the resin matrix precursor component may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet another embodiment, the perfluoropolymer of the resin matrix precursor component may be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0048] According to yet another embodiment, the forming mixture may include a particular content of the resin matrix precursor component. For example, the content of the resin matrix precursor component may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or at least about 55% by volume. According to yet another embodiment, the content of the resin matrix precursor component is about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or about 57% by volume or less, based on the total volume of the forming mixture. It will be understood that the content of the resin matrix precursor component may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the resin matrix precursor component may be within a range between and including any of the minimum and maximum values ​​recited above.

[0049] According to still other embodiments, the forming mixture may include a specific content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45% by volume, for example, at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or at least about 55% by volume, based on the total volume of the forming mixture. According to still other embodiments, the content of perfluoropolymer may be about 63% by volume or less, for example, about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or about 57% by volume or less, based on the total volume of the forming mixture. It will be understood that the content of perfluoropolymer may be any value between and including any of the above minimum values ​​and any of the above maximum values. It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum and maximum values ​​recited above.

[0050] Turning now to embodiments of a dielectric substrate formed according to forming method 100, Figure 2 includes an illustration of a dielectric composite 200. As shown in Figure 2, the dielectric composite 200 can include a dielectric substrate 201 overlying a reinforcing fabric layer 202. As further shown in Figure 2, the dielectric substrate 201 can include a resin matrix component 210 and a ceramic filler component 220.

[0051] According to certain embodiments, the reinforcing fabric layer 202 may include a glass fabric material. According to yet other embodiments, the reinforcing fabric layer 202 may include an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or any combination thereof. According to yet other embodiments, the reinforcing fabric layer 202 may include a woven fabric or a fibrous material. According to yet other embodiments, the fibrous material may include an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or any combination thereof. According to yet other embodiments, the reinforcing fabric layer 202 may include a non-woven fabric of a fibrous material. According to yet other embodiments, the fiber material may include E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

[0052] According to yet other embodiments, the reinforcing fabric layer 202 may have a particular thickness. For example, the thickness of the reinforcing fabric layer 202 may be at least about 4 microns, such as at least about 5 microns, or at least about 6 microns, or at least about 7 microns, or at least about 8 microns, or at least about 9 microns, or at least about 10 microns, or at least about 11 microns, or at least about 12 microns. According to yet other embodiments, the thickness of the reinforcing fabric layer 202 may be about 1000 microns or less, such as about 900 microns or less, or about 800 microns or less, or about 700 microns or less, or about 600 microns or less, or about 500 microns or less, or about 400 microns or less, or about 300 microns or less, or about 200 microns or less. It will be understood that the thickness of the reinforcing fabric layer 202 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the thickness of the reinforcing fabric layer 202 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0053] According to certain embodiments, the ceramic filler component 220 may include a first filler material having certain properties that may enhance the performance of the dielectric substrate 201 .

[0054] According to certain embodiments, the first filler material of the ceramic filler component 220 may have a particular particle size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler material, is defined as the D value of the particle size distribution, D 10 , D 50 , and D. 90 The particle size distribution can be described using any combination of D 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90 A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, measurements of particle size for a particular material are made using laser diffraction spectroscopy.

[0055] According to a particular embodiment, the first filler material of the ceramic filler material component 220 has a particular particle size distribution D 10 For example, the D of the first filler material may have a value of 10 may be at least about 0.5 microns, e.g., at least about 0.6 microns, or at least about 0.7 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns. According to yet other embodiments, the D of the first filler material 10 may be about 1.6 microns or less, such as about 1.5 microns or less, or about 1.4 microns or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0056] According to another embodiment, the first filler material of the ceramic filler material component 220 has a particular particle size distribution D 50 For example, the D of the first filler material may have a value of 50may be at least about 0.8 microns, e.g., at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns, or at least about 1.3 microns, or at least about 1.4 microns, or at least about 1.5 microns, or at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns. According to yet another embodiment, the D of the first filler material 50 D of the first filler material may be about 2.7 microns or less, for example, about 2.6 microns or less, or about 2.5 microns or less, or about 2.4 microns or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0057] According to another embodiment, the first filler material of the ceramic filler component 220 has a particular particle size distribution D 90 For example, the D of the first filler material may have a value of 90 may be at least about 1.5 microns, e.g., at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns, or at least about 2.3 microns, or at least about 2.4 microns, or at least about 2.5 microns, or at least about 2.6 microns, or at least about 2.7 microns. According to yet other embodiments, the D of the first filler material 90may be about 8.0 microns or less, for example, about 7.5 microns or less, or about 7.0 microns or less, or about 6.5 microns or less, or about 6.0 microns or less, or about 5.5 microns or less, or about 5.4 microns or less, or about 5.3 microns or less, or about 5.2 microns or less, or about 5.1 microns or less. 90 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0058] According to yet another embodiment, the first filler material of the ceramic filler component 220 may have a particular average particle size measured according to laser diffraction spectroscopy. For example, the average particle size of the first filler material may be about 10 microns or less, such as about 9 microns or less, or about 8 microns or less, or about 7 microns or less, or about 6 microns or less, or about 5 microns or less, or about 4 microns or less, or about 3 microns or less, or about 2 microns or less. It will be understood that the average particle size of the first filler material may be any value between and including any of the values ​​recited above. It will be further understood that the average particle size of the first filler material may be within a range between and including any of the values ​​recited above.

[0059] According to yet another embodiment, the first filler material of the ceramic filler component 220 can be described as having a particular particle size distribution span (PSDS), where the PSDS is (D 90 -D 10 / D 50 ), and D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50It is equal to a particle size distribution measurement. For example, the PSDS of the first filler material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or about 2.5 or less. It will be understood that the PSDS of the first filler material may be any value between and including any of the values ​​recited above. It will be further understood that the PSDS of the first filler material may be within a range between and including any of the values ​​recited above.

[0060] According to yet another embodiment, the first filler material of the ceramic filler component 220 can be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the average surface area of ​​the first filler material can be about 8 m. 2 / g or less, for example, about 7.9m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or about 3.5m 2 According to yet another embodiment, the average surface area of ​​the first filler material may be at least about 1.2 m / g or less. 2 / g, e.g., at least about 2.2m 2 / g. It will be appreciated that the average surface area of ​​the first filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further appreciated that the average surface area of ​​the first filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0061] According to other embodiments, the first filler material of the ceramic filler material component 220 may include a particular material. According to certain embodiments, the first filler material may include a silica-based compound. According to yet other embodiments, the first filler material may be comprised of a silica-based compound. In other embodiments, the first filler material may include silica. According to yet other embodiments, the first filler material may be comprised of silica.

[0062] According to yet another embodiment, the dielectric substrate 201 may include a particular content of the ceramic filler component 220. For example, the content of the ceramic filler component 220 may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, based on the total volume of the dielectric substrate 201. According to yet another embodiment, the content of the ceramic filler component 220 may be about 57% by volume or less, such as about 56% by volume or less, or about 55% by volume or less, based on the total volume of the dielectric substrate 201. It will be understood that the content of the ceramic filler component 220 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the ceramic filler component 220 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0063] According to yet another embodiment, the ceramic filler component 220 may include a certain content of the first filler material. For example, the content of the first filler material may be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or at least about 90 vol.%, based on the total volume of the ceramic filler component 220. According to yet another embodiment, the content of the first filler material may be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or about 92 vol.% or less, based on the total volume of the ceramic filler component 220. It will be appreciated that the content of the first filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​set forth above. It will be further appreciated that the content of the first filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​set forth above.

[0064] According to yet other embodiments, the ceramic filler component 220 may include a second filler material.

[0065] According to yet other embodiments, the second filler material of the ceramic filler component 220 may include a specific material. For example, the second filler material may include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to certain embodiments, the second filler material of the ceramic filler component 220 may include a high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0066] According to yet another embodiment, the second filler material of the ceramic filler component 220 can include TiO2. According to yet another embodiment, the second filler material can be composed of TiO2.

[0067] According to yet another embodiment, the ceramic filler component 220 may include a certain content of the second filler material. For example, the content of the second filler material may be at least about 1 vol.%, such as at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.%, based on the total volume of the ceramic filler component 220. According to yet another embodiment, the content of the second filler material may be about 20 vol.% or less, such as about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the ceramic filler component 220. It will be appreciated that the content of the second filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the second filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0068] According to yet other embodiments, the ceramic filler component 220 may include a particular content of amorphous material. For example, the ceramic filler component 220 may include at least about 97% amorphous material, such as at least about 98%, or at least about 99% amorphous material. It will be understood that the content of amorphous material may be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material may be within a range between and including any of the values ​​recited above.

[0069] According to other embodiments, the resin matrix component 210 can include certain materials. For example, the resin matrix component 210 can include a perfluoropolymer. According to yet other embodiments, the resin matrix component 210 can be composed of a perfluoropolymer.

[0070] According to yet other embodiments, the perfluoropolymer of the resin matrix component 210 may include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the resin matrix component 210 may be comprised of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0071] According to yet other embodiments, the perfluoropolymer of the resin matrix component 210 may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet other embodiments, the perfluoropolymer of the resin matrix component 210 may be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0072] According to yet another embodiment, the dielectric substrate 201 may include a particular content of the resin matrix component 210. For example, the content of the resin matrix component 210 may be at least about 45 volume % based on the total volume of the dielectric substrate 201, such as at least about 46 volume %, or at least about 47 volume %, or at least about 48 volume %, or at least about 49 volume %, or at least about 50 volume %, or at least about 51 volume %, or at least about 52 volume %, or at least about 53 volume %, or at least about 54 volume %, or at least about 55 volume %. According to yet another embodiment, the content of the resin matrix component 210 is about 63 volume % or less, or about 62 volume % or less, or about 61 volume % or less, or about 60 volume % or less, or about 59 volume % or less, or about 58 volume % or less, or about 57 volume % or less based on the total volume of the dielectric substrate 201. It will be appreciated that the content of the resin matrix component 210 may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the resin matrix component 210 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0073] According to yet another embodiment, the dielectric substrate 201 may include a particular content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45% by volume, for example, at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or at least about 55% by volume. According to yet another embodiment, the content of perfluoropolymer may be about 63% by volume or less, for example, about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or about 57% by volume or less, for example, at least about 45% by volume, or ... It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum and maximum values ​​recited above.

[0074] According to yet other embodiments, the dielectric substrate 201 may include a particular porosity measured using X-ray diffraction. For example, the porosity of the substrate 201 may be about 10% by volume or less, such as about 9% by volume or less, or about 8% by volume or less, or about 7% by volume or less, or about 6% by volume or less, or about 5% by volume or less. It will be understood that the porosity of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the porosity of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0075] According to yet other embodiments, the dielectric substrate 201 may have a particular average thickness. For example, the average thickness of the dielectric substrate 201 may be at least about 10 microns, e.g., at least about 15 microns, or at least about 20 microns, or at least about 25 microns, or at least about 30 microns, or at least about 35 microns, or at least about 40 microns, or at least about 45 microns, or at least about 50 microns, or at least about 55 microns, or at least about 60 microns, or at least about 65 microns, or at least about 70 microns, or at least about 75 microns. According to yet other embodiments, the average thickness of the dielectric substrate 201 may be about 2000 microns or less, for example, about 1800 microns or less, or about 1600 microns or less, or about 1400 microns or less, or about 1200 microns or less, or about 1000 microns or less, or about 800 microns or less, or about 600 microns or less, or about 400 microns or less, or about 200 microns or less, or about 190 microns or less, or about 180 microns or less, or about 170 microns or less, or about 160 microns or less, or about 150 microns or less, or about 140 microns or less, or about 120 microns or less, or about 100 microns or less. It will be understood that the average thickness of the dielectric substrate 201 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the dielectric substrate 201 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0076] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 5 GHz and 20% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0077] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 5 GHz and 80% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0078] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 10 GHz and 20% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0079] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 10 GHz and 80% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0080] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured at 28 GHz and 20% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0081] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured at 28 GHz and 80% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0082] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured at 39 GHz and 20% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0083] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured at 39 GHz and 80% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0084] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 76 to 81 GHz and 20% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0085] According to yet another embodiment, the dielectric substrate 201 may have a particular dissipation factor (Df) measured in the range of 76 to 81 GHz and 80% RH. For example, the dielectric substrate 201 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 201 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 201 may be within a range between and including any of the values ​​recited above.

[0086] According to yet another embodiment, the dielectric substrate 201 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev.C Glass Transition Temperature and Z-Axis Thermal Expansion by TMA. For example, the dielectric substrate 201 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0087] According to yet another embodiment, the dielectric substrate 201 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev.C Glass Transition Temperature and X-Axis Thermal Expansion by TMA. For example, the dielectric substrate 201 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0088] According to yet another embodiment, the dielectric substrate 201 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev.C Glass Transition Temperature and Y-Axis Thermal Expansion by TMA. For example, the dielectric substrate 201 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0089] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured at 5 GHz and 20% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0090] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured at 5 GHz and 80% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0091] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured at 10 GHz and 20% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0092] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured at 10 GHz and 80% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0093] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured at 28 GHz and 20% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0094] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured at 28 GHz and 80% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0095] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured at 39 GHz and 20% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0096] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured at 39 GHz and 80% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0097] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured in the range of 76 to 81 GHz and 20% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0098] According to yet another embodiment, the dielectric composite 200 may have a particular dissipation factor (Df) measured in the range of 76 to 81 GHz and 80% RH. For example, the dielectric composite 200 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0099] According to yet another embodiment, the dielectric composite 200 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-Axis Thermal Expansion by TMA. For example, the dielectric composite 200 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0100] According to yet another embodiment, the dielectric composite 200 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and X-Axis Thermal Expansion by TMA. For example, the dielectric composite 200 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0101] According to yet another embodiment, the dielectric composite 200 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Y-Axis Thermal Expansion by TMA. For example, the dielectric composite 200 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0102] According to yet other embodiments, the dielectric composite 200 may have a particular tensile modulus measured according to ASTM D882 or IPC-TM-650 2-4-18.3. For example, the dielectric composite 200 may have a tensile modulus of at least about 200 MPa, such as at least about 300 MPa, or at least about 400 MPa, or at least about 500 MPa, or at least about 600 MPa, or at least about 700 MPa, or at least about 800 MPa, or at least about 900 MPa, or at least about 1000 MPa. According to yet other embodiments, the dielectric composite 200 may have a tensile modulus of about 100,000 MPa or less, about 90,000 MPa or less, or about 80,000 MPa or less, or about 70,000 MPa or less, or about 60,000 MPa or less. It will be appreciated that the tensile modulus of the dielectric composite 200 may be any value between and including any of the above values. It will be further understood that the tensile modulus of the dielectric composite 200 can be within a range between and including any of the values ​​recited above.

[0103] According to yet other embodiments, the dielectric composite 200 may have a particular storage modulus at room temperature measured according to IPC-TM-650 2.4.24.4. For example, the dielectric composite 200 may have a storage modulus of at least about 1200 MPa at room temperature, such as at least about 1300 MPa, or at least about 1400 MPa, or at least about 1500 MPa, or at least about 1600 MPa, or at least about 1700 MPa, or at least about 1800 MPa, or at least about 1900 MPa, or at least about 2000 MPa, or at least about 3000 MPa, or at least about 4000 MPa, or at least about 4000 MPa, or at least about 5000 MPa. According to yet other embodiments, the dielectric composite 200 may have a storage modulus at room temperature of about 100,000 MPa or less, or about 90,000 MPa or less, or about 80,000 MPa or less, or about 70,000 MPa or less, or about 60,000 MPa or less. It will be appreciated that the storage modulus at room temperature of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the storage modulus at room temperature of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0104] According to yet other embodiments, the dielectric composite 200 may have a particular storage modulus at 70° C. measured according to IPC-TM-650 2.4.24.4. For example, the dielectric composite 200 may have a storage modulus at 70° C. of at least about 600 MPa, such as at least about 800 MPa, or at least about 1000 MPa, or at least about 1200 MPa, or at least about 1400 MPa, or at least about 1600 MPa, or at least about 1800 MPa, or at least about 2000 MPa, or at least about 3000 MPa, or at least about 4000 MPa. According to yet other embodiments, the dielectric composite 200 may have a storage modulus at 70° C. of about 100,000 MPa or less, or about 90,000 MPa or less, or about 80,000 MPa or less, or about 70,000 MPa or less, or about 60,000 MPa or less. It will be appreciated that the storage modulus at 70° C. of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the storage modulus at 70° C. of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0105] According to yet other embodiments, the dielectric composite 200 can have a particular yield point measured according to ASTM D882, or IPC-TM-650 2-4-18.3. For example, the dielectric composite 200 may have a yield point of at least about 2 MPa, such as at least about 3 MPa, at least about 4 MPa, at least about 5 MPa, at least about 6 MPa, or at least about 7 MPa. According to yet other embodiments, the dielectric composite 200 may have a yield point of about 400 MPa or less, or about 350 MPa or less, or about 300 MPa or less, or about 250 MPa or less, or about 200 MPa or less. It will be appreciated that the yield point of the dielectric composite 200 may be any value between and including any of the values ​​recited above. It will be further appreciated that the yield point of the dielectric composite 200 may be within a range between and including any of the values ​​recited above.

[0106] It will be understood that any dielectric composite or dielectric substrate described herein (e.g., dielectric composite 200, or dielectric substrate 201) may include an additional polymer-based layer on the outer surface of the originally described dielectric substrate, and that the additional polymer-based layer may include a filler as described herein (i.e., be a filled polymer layer) or may not include a filler (i.e., be an unfilled polymer layer).

[0107] Additionally, it will be appreciated that the dielectric composite 200 may further include an adhesive layer between the reinforcing fabric layer and the dielectric substrate. According to certain embodiments, the adhesive layer may include PFA, FEP, or any combination thereof.

[0108] According to yet other embodiments, the adhesive layer may have a particular thickness. For example, the adhesive layer may have a thickness of at least about 0.1 microns, such as at least about 0.2 microns, or at least about 0.3 microns, or at least about 0.4 microns, or at least about 0.5 microns, or at least about 0.6 microns, or at least about 0.7 microns. According to yet other embodiments, the adhesive layer may have a thickness of about 25 microns or less, such as about 20 microns or less, or about 15 microns or less, or about 10 microns or less, or about 5 microns or less. It will be understood that the adhesive layer thickness may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the adhesive layer thickness may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0109] We now describe embodiments of copper clad laminates that include the dielectric substrates described herein. Such additional embodiments described herein generally relate to copper clad laminates that may include a copper foil layer and a dielectric substrate overlying the copper foil layer. According to certain embodiments, the dielectric substrate may include a resin matrix component and a ceramic filler component.

[0110] Turning now to methods of forming a copper clad laminate, Figure 3 includes a diagram illustrating a forming method 300 for forming a copper clad laminate in accordance with embodiments described herein. According to certain embodiments, the forming method 300 may include a first step 310 of providing a copper foil layer, a second step 320 of providing a reinforcing fabric layer overlying the copper foil layer, a third step 330 of combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture, and a fourth step 340 of applying the forming mixture to a dielectric substrate overlying the reinforcing fabric layer to form a copper clad laminate.

[0111] Referring first to the second step 320, according to certain embodiments, the reinforcing fabric layer may include a glass fabric material. According to yet other embodiments, the reinforcing fabric layer may include an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or any combination thereof. According to yet other embodiments, the reinforcing fabric layer may include a woven fabric or a fibrous material. According to yet other embodiments, the fibrous material may include an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or any combination thereof. According to yet other embodiments, the reinforcing fabric layer may include a non-woven fabric of a fibrous material. According to yet other embodiments, the fiber material may include E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

[0112] According to yet other embodiments, the reinforcing fabric layer may have a particular thickness. For example, the thickness of the reinforcing fabric layer may be at least about 4 microns, such as at least about 5 microns, or at least about 6 microns, or at least about 7 microns, or at least about 8 microns, or at least about 9 microns, or at least about 10 microns, or at least about 11 microns, or at least about 12 microns. According to yet other embodiments, the thickness of the reinforcing fabric layer may be about 1000 microns or less, such as about 900 microns or less, or about 800 microns or less, or about 700 microns or less, or about 600 microns or less, or about 500 microns or less, or about 400 microns or less, or about 300 microns or less, or about 200 microns or less. It will be understood that the thickness of the reinforcing fabric layer may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the thickness of the reinforcing fabric layer may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0113] According to certain embodiments, the ceramic filler precursor composition may include a first filler precursor material that may have particular properties that enhance the performance of the dielectric substrate formed by the forming method 300.

[0114] According to certain embodiments, the first filler precursor material may have a particular particle size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler precursor material, is referred to as the particle size distribution D value D 10 , D 50 , and D. 90 The particle size distribution can be described using any combination of D 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50 The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger.90 A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0115] According to a particular embodiment, the first filler precursor material has a particular particle size distribution D 10 For example, the D of the first filler precursor material may have a value of 10 may be at least about 0.5 microns, e.g., at least about 0.6 microns, or at least about 0.7 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns. According to yet other embodiments, the D of the first filler material 10 may be about 1.6 microns or less, such as about 1.5 microns or less, or about 1.4 microns or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0116] According to another embodiment, the first filler precursor material has a particular particle size distribution D 50 For example, the D of the first filler precursor material may have a value of 50may be at least about 0.8 microns, e.g., at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns, or at least about 1.3 microns, or at least about 1.4 microns, or at least about 1.5 microns, or at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns. According to yet another embodiment, the D of the first filler material 50 may be about 2.7 microns or less, such as about 2.6 microns or less, or about 2.5 microns or less, or about 2.4 microns or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0117] According to another embodiment, the first filler precursor material has a particular particle size distribution D 90 For example, the D of the first filler precursor material may have a value of 90 may be at least about 1.5 microns, e.g., at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns, or at least about 2.3 microns, or at least about 2.2 microns, or at least about 2.5 microns, or at least about 2.6 microns, or at least about 2.7 microns. According to yet another embodiment, the D of the first filler material 90may be about 8.0 microns or less, for example, about 7.5 microns or less, or about 7.0 microns or less, or about 6.5 microns or less, or about 6.0 microns or less, or about 5.5 microns or less, or about 5.4 microns or less, or about 5.3 microns or less, or about 5.2 microns or less, or about 5.1 microns or less. 90 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0118] According to yet another embodiment, the first filler precursor material may have a particular average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the first filler precursor material may be about 10 microns or less, such as about 9 microns or less, or about 8 microns or less, or about 7 microns or less, or about 6 microns or less, or about 5 microns or less, or about 4 microns or less, or about 3 microns or less, or about 2 microns or less. It will be understood that the average particle size of the first filler precursor material may be any value between and including any of the values ​​above. It will be further understood that the average particle size of the first filler precursor material may be within a range between and including any of the values ​​above.

[0119] According to yet another embodiment, the first filler precursor material can be described as having a particular particle size distribution span (PSDS), the PSDS being (D 90 -D 10 / D 50 ), and D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50It is equal to a particle size distribution measurement. For example, the PSDS of the first filler precursor material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or about 2.5 or less. It will be understood that the PSDS of the first filler precursor material may be any value between and including any of the values ​​recited above. It will be further understood that the PSDS of the first filler precursor material may be within a range between and including any of the values ​​recited above.

[0120] According to yet other embodiments, the first filler precursor material may be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the average surface area of ​​the first filler precursor material may be about 8 m. 2 / g or less, for example, about 7.9m 2 / g or less, or about 7.5m 2 / g or less, or 7.0m 2 / g, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or about 3.5m 2 According to yet another embodiment, the first filler precursor material may have an average surface area of ​​at least about 1.2 m / g or less. 2 / g, e.g., at least about 2.2m 2 / g. It will be understood that the average surface area of ​​the first filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average surface area of ​​the first filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0121] According to other embodiments, the first filler precursor material can include a particular material. According to certain embodiments, the first filler precursor material can include a silica-based compound. According to yet other embodiments, the first filler precursor material can be comprised of a silica-based compound. According to other embodiments, the first filler precursor material can include silica. According to yet other embodiments, the first filler precursor material can be comprised of silica.

[0122] According to yet another embodiment, the forming mixture may include a particular content of the ceramic filler precursor component. For example, the content of the ceramic filler precursor component may be at least about 45 volume percent, such as at least about 46 volume percent, or at least about 47 volume percent, or at least about 48 volume percent, or at least about 49 volume percent, or at least about 50 volume percent, or at least about 51 volume percent, or at least about 52 volume percent, or at least about 53 volume percent, or at least about 54 volume percent, based on the total volume of the forming mixture. According to yet another embodiment, the content of the ceramic filler precursor component may be about 57 volume percent or less, such as about 56 volume percent or less, or about 55 volume percent or less, based on the total volume of the forming mixture. It will be understood that the content of the ceramic filler precursor component may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the ceramic filler precursor component may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0123] According to yet another embodiment, the ceramic filler precursor component may include a certain content of the first filler precursor material. For example, the content of the first filler precursor material may be at least about 80 volume % based on the total volume of the ceramic filler precursor component, such as at least about 81 volume %, or at least about 82 volume %, or at least about 83 volume %, or at least about 84 volume %, or at least about 85 volume %, or at least about 86 volume %, or at least about 87 volume %, or at least about 88 volume %, or at least about 89 volume %, or at least about 90 volume %. According to yet another embodiment, the content of the first filler precursor material may be about 100 volume % or less based on the total volume of the ceramic filler precursor component, such as about 99 volume % or less, or about 98 volume % or less, or about 97 volume % or less, or about 96 volume % or less, or about 95 volume % or less, or about 94 volume % or less, or about 93 volume % or less, or about 92 volume % or less. It will be appreciated that the content of the first filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​set forth above. It will be further appreciated that the content of the first filler precursor material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​set forth above.

[0124] According to yet other embodiments, the ceramic filler precursor component may include a second filler precursor material.

[0125] According to yet another embodiment, the second filler precursor material can include a specific material. For example, the second filler precursor material can include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the second filler precursor material can include a high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0126] According to yet another embodiment, the second filler precursor material can include TiO2. According to yet another embodiment, the second filler precursor material can consist of TiO2.

[0127] According to yet another embodiment, the ceramic filler precursor component may include a certain content of the second filler precursor material. For example, the content of the second filler precursor material may be at least about 1 vol.%, for example, at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.% based on the total volume of the ceramic filler precursor component. According to yet another embodiment, the content of the second filler precursor material may be about 20 vol.% or less, for example, about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less based on the total volume of the ceramic filler precursor component. It will be understood that the content of the second filler precursor material may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the second filler precursor material may be within a range between and including any of the minimum and maximum values ​​set forth above.

[0128] According to yet other embodiments, the ceramic filler precursor component may include a particular content of amorphous material. For example, the ceramic filler precursor component may include at least about 97% amorphous material, such as at least about 98%, or at least about 99% amorphous material. It will be understood that the content of amorphous material may be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material may be within a range between and including any of the values ​​recited above.

[0129] Turning now to embodiments of copper clad laminates formed according to forming method 300, Figure 4 includes an illustration of a copper clad laminate 400. As shown in Figure 4, copper clad laminate 400 may include a copper foil layer 402 and a dielectric composite 401 overlying a surface of copper foil layer 402. According to certain embodiments, dielectric composite 401 may include a dielectric substrate 405 overlying a reinforcing fabric layer 407. According to yet other embodiments, dielectric substrate 405 may include a resin matrix component 410 and a ceramic filler component 420.

[0130] According to certain embodiments, the reinforcing fabric layer 407 may include a glass fabric material. According to yet other embodiments, the reinforcing fabric layer 407 may include an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or any combination thereof. According to yet other embodiments, the reinforcing fabric layer 407 may include a woven fabric or a fibrous material. According to yet other embodiments, the fibrous material may include an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or any combination thereof. According to yet other embodiments, the reinforcing fabric layer 407 may include a non-woven fabric of a fibrous material. According to yet other embodiments, the fiber material may include E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

[0131] According to yet other embodiments, the reinforcing fabric layer 407 may have a particular thickness. For example, the thickness of the reinforcing fabric layer 407 may be at least about 4 microns, such as at least about 5 microns, or at least about 6 microns, or at least about 7 microns, or at least about 8 microns, or at least about 9 microns, or at least about 10 microns, or at least about 11 microns, or at least about 12 microns. According to yet other embodiments, the thickness of the reinforcing fabric layer 407 may be about 1000 microns or less, such as about 900 microns or less, or about 800 microns or less, or about 700 microns or less, or about 600 microns or less, or about 500 microns or less, or about 400 microns or less, or about 300 microns or less, or about 200 microns or less. It will be understood that the thickness of the reinforcing fabric layer 407 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the thickness of the reinforcing fabric layer 407 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0132] According to certain embodiments, the ceramic filler component 420 may include a first filler material that may have certain properties that may enhance the performance of the copper clad laminate 400 .

[0133] According to certain embodiments, the first filler material of the ceramic filler component 420 may have a particular particle size distribution. For purposes of the embodiments described herein, the particle size distribution of a material, e.g., the particle size distribution of a first filler material, is defined as the particle size distribution D value D 10 , D 50 , and D. 90 The particle size distribution can be described using any combination of D 10 The D value is defined as the particle size value below which 10% of the particles are smaller and above which 90% of the particles are larger. 50The D value is defined as the particle size value below which 50% of the particles are smaller and above which 50% of the particles are larger. 90 A value is defined as the particle size value below which 90% of the particles are smaller and 10% of the particles are greater. For purposes of the embodiments described herein, particle size measurements for certain materials are performed using laser diffraction spectroscopy.

[0134] According to a particular embodiment, the first filler material of the ceramic filler component 420 has a particular particle size distribution D 10 For example, the D of the first filler material may have a value of 10 may be at least about 0.5 microns, e.g., at least about 0.6 microns, or at least about 0.7 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns. According to yet other embodiments, the D of the first filler material 10 may be about 1.6 microns or less, such as about 1.5 microns or less, or about 1.4 microns or less. 10 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 10 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0135] According to another embodiment, the first filler material of the ceramic filler component 420 has a particular particle size distribution D 50 For example, the D of the first filler material may have a value of 50may be at least about 0.8 microns, e.g., at least about 0.9 microns, or at least about 1.0 microns, or at least about 1.1 microns, or at least about 1.2 microns, or at least about 1.3 microns, or at least about 1.4 microns, or at least about 1.5 microns, or at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns. According to yet another embodiment, the D of the first filler material 50 D of the first filler material may be about 2.7 microns or less, for example, about 2.6 microns or less, or about 2.5 microns or less, or about 2.4 microns or less. 50 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 50 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0136] According to another embodiment, the first filler material of the ceramic filler component 420 has a particular particle size distribution D 90 For example, the D of the first filler material may have a value of 90 may be at least about 1.5 microns, e.g., at least about 1.6 microns, or at least about 1.7 microns, or at least about 1.8 microns, or at least about 1.9 microns, or at least about 2.0 microns, or at least about 2.1 microns, or at least about 2.2 microns, or at least about 2.3 microns, or at least about 2.2 microns, or at least about 2.5 microns, or at least about 2.6 microns, or at least about 2.7 microns. According to yet another embodiment, the D of the first filler material 90may be about 8.0 microns or less, for example, about 7.5 microns or less, or about 7.0 microns or less, or about 6.5 microns or less, or about 6.0 microns or less, or about 5.5 microns or less, or about 5.4 microns or less, or about 5.3 microns or less, or about 5.2 microns or less, or about 5.1 microns or less. 90 It will be understood that D may be any value between and including any of the minimum and maximum values ​​listed above. 90 It will be further understood that may be within a range between and including any of the minimum and maximum values ​​recited above.

[0137] According to yet another embodiment, the first filler material of the ceramic filler component 420 may have a particular average particle size measured according to laser diffraction spectroscopy. For example, the average particle size of the first filler material may be about 10 microns or less, such as about 9 microns or less, or about 8 microns or less, or about 7 microns or less, or about 6 microns or less, or about 5 microns or less, or about 4 microns or less, or about 3 microns or less, or about 2 microns or less. It will be understood that the average particle size of the first filler material may be any value between and including any of the values ​​recited above. It will be further understood that the average particle size of the first filler material may be within a range between and including any of the values ​​recited above.

[0138] According to yet another embodiment, the first filler material of the ceramic filler component 420 can be described as having a particular particle size distribution span (PSDS), where the PSDS is (D 90 -D 10 / D 50 ), and D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50It is equal to a particle size distribution measurement. For example, the PSDS of the first filler material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or about 2.5 or less. It will be understood that the PSDS of the first filler material may be any value between and including any of the values ​​recited above. It will be further understood that the PSDS of the first filler material may be within a range between and including any of the values ​​recited above.

[0139] According to yet another embodiment, the first filler material of the ceramic filler component 420 may be described as having a particular average surface area as measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the average surface area of ​​the first filler material may be about 8 m. 2 / g or less, for example, about 7.9m 2 / g or less, or about 7.5m 2 / g or less, or 7.0m 2 / g, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or about 3.5m 2 According to yet another embodiment, the average surface area of ​​the first filler material may be at least about 1.2 m / g or less. 2 / g, e.g., at least about 2.2m 2 / g. It will be appreciated that the average surface area of ​​the first filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further appreciated that the average surface area of ​​the first filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0140] According to other embodiments, the first filler material of the ceramic filler component 420 may include a particular material. According to certain embodiments, the first filler material may include a silica-based compound. According to yet other embodiments, the first filler material may be comprised of a silica-based compound. According to other embodiments, the first filler material may include silica. According to yet other embodiments, the first filler material may be comprised of silica.

[0141] According to yet another embodiment, the dielectric substrate 405 may include a particular content of the ceramic filler component 420. For example, the content of the ceramic filler component 420 may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, based on the total volume of the dielectric substrate 405. According to yet another embodiment, the content of the ceramic filler component 420 may be about 57% by volume or less, such as about 56% by volume or less, or about 55% by volume or less, based on the total volume of the dielectric substrate 400. It will be understood that the content of the ceramic filler component 420 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the content of the ceramic filler component 420 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0142] According to yet another embodiment, the ceramic filler component 420 may include a certain content of the first filler material. For example, the content of the first filler material may be at least about 80 vol.%, such as at least about 81 vol.%, or at least about 82 vol.%, or at least about 83 vol.%, or at least about 84 vol.%, or at least about 85 vol.%, or at least about 86 vol.%, or at least about 87 vol.%, or at least about 88 vol.%, or at least about 89 vol.%, or at least about 90 vol.%, based on the total volume of the ceramic filler component 420. According to yet another embodiment, the content of the first filler material may be about 100 vol.% or less, such as about 99 vol.% or less, or about 98 vol.% or less, or about 97 vol.% or less, or about 96 vol.% or less, or about 95 vol.% or less, or about 94 vol.% or less, or about 93 vol.% or less, or about 92 vol.% or less, based on the total volume of the ceramic filler component 420. It will be appreciated that the content of the first filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​set forth above. It will be further appreciated that the content of the first filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​set forth above.

[0143] According to yet other embodiments, the ceramic filler component 420 may include a second filler material.

[0144] According to yet other embodiments, the second filler material of the ceramic filler component 420 may include a specific material. For example, the second filler material may include a high dielectric constant ceramic material, such as a ceramic material having a dielectric constant of at least about 14. According to certain embodiments, the second filler material of the ceramic filler component 420 may include a high dielectric constant ceramic material, such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0145] According to yet another embodiment, the second filler material of the ceramic filler component 420 can include TiO2. According to yet another embodiment, the second filler material can be composed of TiO2.

[0146] According to yet another embodiment, the ceramic filler component 420 may include a certain content of the second filler material. For example, the content of the second filler material may be at least about 1 vol.%, such as at least about 2 vol.%, or at least about 3 vol.%, or at least about 4 vol.%, or at least about 5 vol.%, or at least about 6 vol.%, or at least about 7 vol.%, or at least about 8 vol.%, or at least about 9 vol.%, or at least about 10 vol.%, based on the total volume of the ceramic filler component 420. According to yet another embodiment, the content of the second filler material may be about 20 vol.% or less, such as about 19 vol.% or less, or about 18 vol.% or less, or about 17 vol.% or less, or about 16 vol.% or less, or about 15 vol.% or less, or about 14 vol.% or less, or about 13 vol.% or less, or about 12 vol.% or less, based on the total volume of the ceramic filler component 220. It will be appreciated that the content of the second filler material may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the second filler material may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0147] According to yet other embodiments, the ceramic filler component 420 may include a particular content of amorphous material. For example, the ceramic filler component 420 may include at least about 97% amorphous material, such as at least about 98%, or at least about 99% amorphous material. It will be understood that the content of amorphous material may be any value between and including any of the values ​​recited above. It will be further understood that the content of amorphous material may be within a range between and including any of the values ​​recited above.

[0148] According to other embodiments, the resin matrix component 410 can include a particular material. For example, the resin matrix component 410 can include a perfluoropolymer. According to yet other embodiments, the resin matrix component 410 can be composed of a perfluoropolymer.

[0149] According to yet other embodiments, the perfluoropolymer of the resin matrix component 410 may include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the resin matrix component 410 may be comprised of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0150] According to yet other embodiments, the perfluoropolymer of the resin matrix component 410 may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to yet other embodiments, the perfluoropolymer of the resin matrix component 410 may be comprised of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0151] According to yet another embodiment, the dielectric substrate 400 may include a particular content of the resin matrix component 410. For example, the content of the resin matrix component 410 may be at least about 45% by volume, such as at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or at least about 55% by volume, based on the total volume of the dielectric substrate 400. According to yet another embodiment, the content of the resin matrix component 410 may be about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or about 57% by volume or less, based on the total volume of the dielectric substrate 400. It will be appreciated that the content of the resin matrix component 410 may be any value between and including any of the minimum values ​​and any of the maximum values ​​recited above. It will be further appreciated that the content of the resin matrix component 410 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​recited above.

[0152] According to yet another embodiment, the dielectric substrate 405 may include a particular content of perfluoropolymer. For example, the content of perfluoropolymer may be at least about 45% by volume, for example, at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or at least about 55% by volume. According to yet another embodiment, the content of perfluoropolymer may be about 63% by volume or less, for example, about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or about 57% by volume or less, for example, at least about 45% by volume, or ... It will be further understood that the perfluoropolymer content may be within a range between and including any of the minimum and maximum values ​​recited above.

[0153] According to yet another embodiment, the dielectric substrate 405 may include a particular porosity measured using X-ray diffraction. For example, the porosity of the substrate 405 may be about 10% by volume or less, such as about 9% by volume or less, or about 8% by volume or less, or about 7% by volume or less, or about 6% by volume or less, or about 5% by volume or less. It will be understood that the porosity of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the porosity of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0154] According to yet other embodiments, the dielectric substrate 405 may have a particular average thickness. For example, the average thickness of the dielectric substrate 405 may be at least about 10 microns, e.g., at least about 15 microns, or at least about 20 microns, or at least about 25 microns, or at least about 30 microns, or at least about 35 microns, or at least about 40 microns, or at least about 45 microns, or at least about 50 microns, or at least about 55 microns, or at least about 60 microns, or at least about 65 microns, or at least about 70 microns, or at least about 75 microns. According to yet other embodiments, the average thickness of the dielectric substrate 405 may be about 2000 microns or less, for example, about 1800 microns or less, or about 1600 microns or less, or about 1400 microns or less, or about 1200 microns or less, or about 1000 microns or less, or about 800 microns or less, or about 600 microns or less, or about 400 microns or less, or about 200 microns or less, or about 190 microns or less, or about 180 microns or less, or about 170 microns or less, or about 160 microns or less, or about 150 microns or less, or about 140 microns or less, or about 120 microns or less, or about 100 microns or less. It will be understood that the average thickness of the dielectric substrate 405 may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the average thickness of the dielectric substrate 405 may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0155] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 5 GHz and 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0156] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 5 GHz and 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0157] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 10 GHz and 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0158] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 10 GHz and 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0159] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 28 GHz and 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0160] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 28 GHz and 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0161] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 39 GHz and 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0162] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured at 39 GHz and 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0163] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 76 to 81 GHz and 20% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0164] According to yet another embodiment, the dielectric substrate 405 may have a particular dissipation factor (Df) measured in the range of 76 to 81 GHz and 80% RH. For example, the dielectric substrate 405 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric substrate 405 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric substrate 405 may be within a range between and including any of the values ​​recited above.

[0165] According to yet another embodiment, the dielectric substrate 405 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev.C Glass Transition Temperature and Z-Axis Thermal Expansion by TMA. For example, the dielectric substrate 405 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0166] According to yet another embodiment, the dielectric substrate 405 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev.C Glass Transition Temperature and X-Axis Thermal Expansion by TMA, for example, the dielectric substrate 405 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0167] According to yet another embodiment, the dielectric substrate 405 may have a particular coefficient of thermal expansion, measured according to IPC-TM-650 2.4.24 Rev.C Glass Transition Temperature and Y-Axis Thermal Expansion by TMA, for example, the dielectric substrate 405 may have a coefficient of thermal expansion of about 80 ppm / ° C. or less.

[0168] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured at 5 GHz and 20% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0169] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured in the range of 5 GHz and 80% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0170] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured at 10 GHz and 20% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0171] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured at 10 GHz and 80% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0172] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured at 28 GHz and 20% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0173] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured at 28 GHz and 80% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0174] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured at 39 GHz and 20% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0175] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured at 39 GHz and 80% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0176] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured in the range of 76 to 81 GHz and 20% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be appreciated that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further appreciated that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0177] According to yet another embodiment, the dielectric composite 401 may have a particular dissipation factor (Df) measured in the range of 76 to 81 GHz and 80% RH. For example, the dielectric composite 401 may have a dissipation factor of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dissipation factor of the dielectric composite 401 may be any value between and including any of the values ​​recited above. It will be further understood that the dissipation factor of the dielectric composite 401 may be within a range between and including any of the values ​​recited above.

[0178] It will be understood that any copper clad laminate described herein may include an additional polymer-based layer on the outer surface of the originally described dielectric substrate between the substrate and any copper foil layer of the copper clad laminate, and as noted herein, the additional polymer-based layer may include a filler as described herein (i.e., a filled polymer layer) or may not include a filler (i.e., an unfilled polymer layer).

[0179] It will be further understood that the dielectric composite 401 may further include an adhesive layer between the reinforcing fabric layer and the dielectric substrate. According to certain embodiments, the adhesive layer may include PFA, FEP, or any combination thereof.

[0180] According to yet other embodiments, the adhesive layer may have a particular thickness. For example, the adhesive layer may have a thickness of at least about 0.1 microns, such as at least about 0.2 microns, or at least about 0.3 microns, or at least about 0.4 microns, or at least about 0.5 microns, or at least about 0.6 microns, or at least about 0.7 microns. According to yet other embodiments, the adhesive layer may have a thickness of about 25 microns or less, such as about 20 microns or less, or about 15 microns or less, or about 10 microns or less, or about 5 microns or less. It will be understood that the adhesive layer thickness may be any value between and including any of the minimum values ​​and any of the maximum values ​​listed above. It will be further understood that the adhesive layer thickness may be within a range between and including any of the minimum values ​​and any of the maximum values ​​listed above.

[0181] Turning now to methods of forming a printed circuit board, Figure 5 includes a diagram illustrating a forming method 500 for forming a printed circuit board according to embodiments described herein. According to certain embodiments, the forming method 500 can include a first step 510 of providing a copper foil layer, a second step 520 of providing a reinforcing fabric layer overlying the copper foil layer, a third step 330 of combining a resin matrix precursor component with a ceramic filler precursor component to form a forming mixture, a fourth step 540 of forming the forming mixture onto a dielectric substrate overlying the reinforcing fabric layer to form a copper clad laminate, and a fifth step 550 of forming the copper clad laminate into a printed circuit board.

[0182] It will be understood that all descriptions, details, and features provided herein with respect to forming method 100 and / or forming method 300 also apply or are described for corresponding aspects of forming method 500.

[0183] Turning now to embodiments of a printed circuit board formed according to forming method 500, Figure 6 includes an illustration of a printed circuit board 600. As shown in Figure 6, the printed circuit board 600 can include a copper clad laminate 601, which can include a copper foil layer 602, and a dielectric composite 603 covering a surface of the copper foil layer 602. According to certain embodiments, the dielectric composite 603 can include a dielectric substrate 605 covering a reinforcing fabric layer 607. According to yet other embodiments, the dielectric substrate 605 can include a resin matrix component 610 and a ceramic filler component 620.

[0184] Again, it will be understood that all descriptions provided herein with respect to dielectric substrate 201 (405) and / or copper clad laminate 400 further apply to modify aspects of printed circuit board 600, including all configurations of printed circuit board 600.

[0185] Many different aspects and embodiments are possible. Some of these aspects and embodiments are described herein. After reading this specification, those skilled in the art will understand that these aspects and embodiments are merely examples and do not limit the scope of the present invention. The embodiment can be according to any one or more of the embodiments listed below.

[0186] Embodiment 1. A dielectric composite comprising a dielectric substrate overlying a reinforcing fabric layer, the dielectric substrate comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, the first filler material having a particle size distribution of at least about 0.5 microns and no greater than about 1.6 microns, D 10 and D of at least about 0.8 microns and not more than about 2.7 microns. 50 and D of at least about 1.5 microns and not more than about 4.7 microns. 90 and

[0187] Embodiment 2. A dielectric composite comprising a dielectric substrate overlying a reinforcing fabric layer, the dielectric substrate comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, the first filler material further comprising an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 Dielectric composite, equal to particle size distribution measurement.

[0188] Embodiment 3. A dielectric composite comprising a dielectric substrate overlying a reinforcing fabric layer, the dielectric substrate comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, the first filler material having an average particle size of about 10 microns or less and an average particle size of about 8 microns or less. 2 and an average surface area of ​​less than or equal to 1 / g.

[0189] Embodiment 4. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the reinforcing fabric layer comprises a glass fabric material.

[0190] Embodiment 5. The dielectric composite of any one of embodiments 1, 2, and 3, wherein the reinforcing fabric layer comprises an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or a combination thereof.

[0191] Embodiment 6. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the reinforcing fabric layer comprises a woven fabric of a fibrous material.

[0192] Embodiment 7. The dielectric composite of embodiment 6, wherein the fiber material comprises E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

[0193] Embodiment 8. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the reinforcing fabric layer comprises a nonwoven fabric of a fibrous material.

[0194] Embodiment 9. The dielectric composite of embodiment 8, wherein the fiber material comprises E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

[0195] Embodiment 10. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the reinforcing fabric layer has a thickness of at least about 4 microns.

[0196] Embodiment 11. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the reinforcing fabric layer has a thickness of about 1 mm or less.

[0197] Embodiment 12. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the dielectric composite further comprises an adhesive layer between the reinforcing fabric and the dielectric substrate.

[0198] Embodiment 13. The dielectric composite of embodiment 12, wherein the adhesive layer comprises PFA, FEP, or any combination thereof.

[0199] Embodiment 14. The dielectric composite of embodiment 12, wherein the adhesive layer has a thickness of at least about 0.1 microns.

[0200] Embodiment 15. The dielectric composite of embodiment 12, wherein the adhesive layer has a thickness of about 25 microns or less.

[0201] Embodiment 16. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the tensile modulus of the dielectric composite is at least about 200 MPA.

[0202] Embodiment 17. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the tensile modulus of the dielectric composite is less than or equal to about 100,000 MPa.

[0203] Embodiment 18. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the dielectric composite has a storage modulus at room temperature of at least about 1200 MPa.

[0204] Embodiment 19. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the dielectric composite has a storage modulus of about 100,000 MPa or less at room temperature.

[0205] Embodiment 20. The dielectric composite of any one of embodiments 1, 2, and 3, wherein the dielectric composite has a storage modulus at 70° C. of at least about 600 MPa.

[0206] Embodiment 21. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the dielectric composite has a storage modulus of about 100,000 MPa or less at 70° C.

[0207] Embodiment 22. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the yield point of the dielectric composite is at least about 2 MPa.

[0208] Embodiment 23. A dielectric composite according to any one of embodiments 1, 2, and 3, wherein the yield point of the dielectric composite is about 400 MPa or less.

[0209] Embodiment 24. The particle size distribution of the first filler material is at least about 0.5 microns and no greater than about 1.6 microns D 10 4. The dielectric substrate of any one of embodiments 2 and 3, comprising:

[0210] Embodiment 25. The particle size distribution of the first filler material is at least about 0.8 microns and no greater than about 2.7 microns D 50 The dielectric substrate according to any one of embodiments 2 and 3,

[0211] Embodiment 26. The particle size distribution of the first filler material is at least about 1.5 microns and no greater than about 4.7 microns D 90 4. The dielectric substrate of any one of embodiments 2 and 3, comprising:

[0212] Embodiment 27. The dielectric substrate of embodiment 1, wherein the first filler material further comprises an average particle size of about 10 microns or less.

[0213] Embodiment 28. A dielectric substrate as described in any one of embodiments 2, 3, and 27, wherein the average particle size of the first filler material is about 10 microns or less, or about 9 microns or less, or about 8 microns or less, or about 7 microns or less, or about 6 microns or less, or about 5 microns or less, or about 4 microns or less, or about 3 microns or less, or about 2 microns or less.

[0214] Embodiment 29. The particle size distribution span (PSDS) of the first filler material is about 5 or less, and the PSDS is (D 90 -D 10 / D 50 ), and D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50is the D of the first filler material 50 4. The dielectric substrate of any one of embodiments 1 and 3, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0215] Embodiment 30. The first filler material is about 8 m 2 3. The dielectric substrate of any one of embodiments 1 and 2, further having an average surface area of ​​less than or equal to 1 / g.

[0216] Embodiment 31. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the first filler material comprises a silica-based compound.

[0217] Embodiment 32. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the first filler material comprises silica.

[0218] Embodiment 33. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the resin matrix comprises a perfluoropolymer.

[0219] Embodiment 34. The dielectric substrate of embodiment 33, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0220] Embodiment 35. The dielectric substrate of embodiment 33, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0221] Embodiment 36. A dielectric substrate as described in embodiment 33, wherein the perfluoropolymer is polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0222] Embodiment 37. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the content of the resin matrix component is at least about 45% by volume, based on the total volume of the dielectric substrate.

[0223] Embodiment 38. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the content of the resin matrix component is about 63 volume % or less, based on the total volume of the dielectric substrate.

[0224] Embodiment 39. A dielectric substrate as described in embodiment 33, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the dielectric substrate.

[0225] Embodiment 40. The dielectric substrate of embodiment 33, wherein the perfluoropolymer content is about 63 volume % or less, based on the total volume of the dielectric substrate.

[0226] Embodiment 41. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the content of the ceramic filler component is at least about 45 volume % relative to the total volume of the dielectric substrate.

[0227] Embodiment 42. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the content of the ceramic filler component is about 57 volume % or less, based on the total volume of the dielectric substrate.

[0228] Embodiment 43. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the content of the first filler material is at least about 80 volume % based on the total volume of the ceramic filler component.

[0229] Embodiment 44. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the content of the first filler material is about 100 volume % or less, based on the total volume of the ceramic filler component.

[0230] Embodiment 45. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the ceramic filler component further comprises a second filler material.

[0231] Embodiment 46. The dielectric substrate of embodiment 45, wherein the second filler material comprises a high dielectric constant ceramic material.

[0232] Embodiment 47. The dielectric substrate of embodiment 46, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0233] Embodiment 48. The dielectric substrate of embodiment 46, wherein the ceramic filler component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0234] Embodiment 49. The dielectric substrate of embodiment 45, wherein the content of the second filler material is at least about 1 volume % based on the total volume of the ceramic filler component.

[0235] Embodiment 50. The dielectric substrate of embodiment 45, wherein the content of the second filler material is about 20 volume % or less, based on the total volume of the ceramic filler component.

[0236] Embodiment 51. The dielectric substrate of any one of embodiments 1, 2, and 3, wherein the ceramic filler component is at least about 97% amorphous.

[0237] Embodiment 52. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the porosity of the dielectric substrate is about 10% by volume or less.

[0238] Embodiment 53. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the average thickness of the dielectric substrate is at least about 10 microns.

[0239] Embodiment 54. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the average thickness of the dielectric substrate is less than or equal to about 2000 microns.

[0240] Embodiment 55. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the dissipation factor (5 GHz, 20% RH) of the dielectric substrate is less than or equal to about 0.005.

[0241] Embodiment 56. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the dissipation factor (5GHz, 20%RH) of the dielectric substrate is less than or equal to about 0.0014.

[0242] Embodiment 57. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the dielectric substrate has a thermal expansion coefficient in the X-axis, Y-axis, or Z-axis of about 80 ppm / °C or less.

[0243] Embodiment 58. A dielectric substrate according to any one of embodiments 1, 2, and 3, wherein the moisture absorption rate of the dielectric substrate is about 0.05% or less.

[0244] Embodiment 59. A copper clad laminate comprising a copper foil layer and a dielectric composite covering the copper foil layer, the dielectric composite comprising a dielectric substrate covering a reinforcing fabric layer, the dielectric substrate comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, the particle size distribution of the first filler material being D 10 is at least about 0.5 microns and not more than about 1.6 microns, and D 50 is at least about 0.8 microns and not more than about 2.7 microns, and D 90 is at least about 1.5 microns and not more than about 4.7 microns.

[0245] Embodiment 60. A copper clad laminate comprising a copper foil layer and a dielectric composite overlying the copper foil layer, the dielectric composite comprising a dielectric substrate overlying a reinforcing fabric layer, the dielectric substrate comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, the first filler material further comprising an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 Copper clad laminate, equal to particle size distribution measurements.

[0246] Embodiment 61. A copper clad laminate comprising a copper foil layer and a dielectric composite covering the copper foil layer, the dielectric composite comprising a dielectric substrate covering a reinforcing fabric layer, the dielectric substrate comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, the first filler material having an average particle size of about 10 microns or less and an average particle size of about 8m 2 and an average surface area of ​​less than or equal to 100 nm / g.

[0247] Embodiment 62. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the reinforcing fabric layer comprises a glass fabric material.

[0248] Embodiment 63. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the reinforcing fabric layer comprises an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or a combination thereof.

[0249] Embodiment 64. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the reinforcing fabric layer comprises a woven fabric of a fibrous material.

[0250] Embodiment 65. The copper clad laminate of embodiment 64, wherein the fiber material comprises E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

[0251] Embodiment 66. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the reinforcing fabric layer comprises a nonwoven fabric of a fibrous material.

[0252] Embodiment 67. The copper clad laminate of embodiment 66, wherein the fiber material comprises an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or any combination thereof.

[0253] Embodiment 68. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the reinforcing fabric layer has a thickness of at least about 4 microns.

[0254] Embodiment 69. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the reinforcing fabric layer has a thickness of about 1 mm or less.

[0255] Embodiment 70. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the dielectric composite further comprises an adhesive layer between the reinforcing fabric and the dielectric substrate.

[0256] Embodiment 71. The copper clad laminate of embodiment 70, wherein the adhesive layer comprises PFA, FEP, or any combination thereof.

[0257] Embodiment 72. The copper clad laminate of embodiment 70, wherein the adhesive layer has a thickness of at least about 0.1 microns.

[0258] Embodiment 73. The copper clad laminate of embodiment 70, wherein the adhesive layer has a thickness of about 25 microns or less.

[0259] Embodiment 74. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the tensile modulus of the dielectric composite is at least about 200 MPa.

[0260] Embodiment 75. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the tensile modulus of the dielectric composite is about 100,000 MPa or less.

[0261] Embodiment 76. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the dielectric composite has a storage modulus at room temperature of at least about 1200 MPa.

[0262] Embodiment 77. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the storage modulus of the dielectric composite at room temperature is about 100,000 MPa or less.

[0263] Embodiment 78. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the storage modulus of the dielectric composite at 70° C. is at least about 600 MPa.

[0264] Embodiment 79. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the storage modulus of the dielectric composite at 70° C. is about 100,000 MPa or less.

[0265] Embodiment 80. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the yield point of the dielectric composite is at least about 2 MPa.

[0266] Embodiment 81. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the yield point of the dielectric composite is about 400 MPa or less.

[0267] Embodiment 82. The particle size distribution of the first filler material is at least about 0.5 microns and no more than about 1.6 microns D 10 62. The copper clad laminate of any one of embodiments 60 and 61, comprising:

[0268] Embodiment 83. The particle size distribution of the first filler material is at least about 0.8 microns and no greater than about 2.7 microns D 50 62. The copper clad laminate of any one of embodiments 60 and 61, comprising:

[0269] Embodiment 84. The particle size distribution of the first filler material is at least about 1.5 microns and no greater than about 4.7 microns D 90 62. The copper clad laminate of any one of embodiments 60 and 61, comprising:

[0270] Embodiment 85. The copper clad laminate of embodiment 59, wherein the first filler material further has an average particle size of about 10 microns or less.

[0271] Embodiment 86. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the first filler material has an average particle size of about 10 microns or less.

[0272] Embodiment 87. The first filler material comprises a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the first filler material D 90 D is equal to the particle size distribution measurement 10 is the first filler material D 10 D is equal to the particle size distribution measurement 50 is the first filler material D 50 62. The copper clad laminate of any one of embodiments 59 and 61, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0273] Embodiment 88. The first filler material is about 8 m 2The copper clad laminate of any one of embodiments 59 and 60, further having an average surface area of ​​less than or equal to 100 / g.

[0274] Embodiment 89. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the first filler material comprises a silica-based compound.

[0275] Embodiment 90. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the first filler material comprises silica.

[0276] Embodiment 91. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the resin matrix comprises a perfluoropolymer.

[0277] Embodiment 92. The copper clad laminate of embodiment 91, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0278] Embodiment 93. The copper clad laminate of embodiment 91, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0279] Embodiment 94. The copper clad laminate of embodiment 91, wherein the perfluoropolymer is polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0280] Embodiment 95. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the content of the resin matrix component is at least about 45 volume % relative to the total volume of the dielectric substrate.

[0281] Embodiment 96. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the content of the resin matrix component is about 63 volume % or less, based on the total volume of the dielectric substrate.

[0282] Embodiment 97. The copper clad laminate of embodiment 91, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the dielectric substrate.

[0283] Embodiment 98. The copper clad laminate of embodiment 91, wherein the perfluoropolymer content is about 63 volume % or less, based on the total volume of the dielectric substrate.

[0284] Embodiment 99. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the content of the ceramic filler component is at least about 45 volume % relative to the total volume of the dielectric substrate.

[0285] Embodiment 100. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the content of the ceramic filler component is about 57 volume % or less, based on the total volume of the dielectric substrate.

[0286] Embodiment 101. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the content of the first filler material is at least about 80 volume % based on the total volume of the ceramic filler component.

[0287] Embodiment 102. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the content of the first filler material is about 100 volume % or less, based on the total volume of the ceramic filler component.

[0288] Embodiment 103. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the ceramic filler component further comprises a second filler material.

[0289] Embodiment 104. The copper clad laminate of embodiment 103, wherein the second filler material comprises a high dielectric constant ceramic material.

[0290] Embodiment 105. The copper clad laminate of embodiment 104, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0291] Embodiment 106. The copper clad laminate of embodiment 104, wherein the ceramic filler component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0292] Embodiment 107. The copper clad laminate of embodiment 103, wherein the content of the second filler material is at least about 1 volume % based on the total volume of the ceramic filler component.

[0293] Embodiment 108. The copper clad laminate of embodiment 103, wherein the content of the second filler material is about 20 volume % or less, based on the total volume of the ceramic filler component.

[0294] Embodiment 109. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the ceramic filler component is at least about 97% amorphous.

[0295] Embodiment 110. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the porosity of the dielectric substrate is about 10% by volume or less.

[0296] Embodiment 111. A copper clad laminate according to any one of embodiments 59, 60, and 62, wherein the average thickness of the dielectric substrate is at least about 10 microns.

[0297] Embodiment 112. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the average thickness of the dielectric substrate is about 2000 microns or less.

[0298] Embodiment 113. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the dissipation factor (5GHz, 20%RH) of the dielectric substrate is about 0.005 or less.

[0299] Embodiment 114. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the dissipation factor (5GHz, 20%RH) of the dielectric substrate is about 0.0014 or less.

[0300] Embodiment 115. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the dielectric substrate has a thermal expansion coefficient in the X-axis, Y-axis, or Z-axis of about 80 ppm / °C or less.

[0301] Embodiment 116. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the moisture absorption rate of the dielectric substrate is about 0.05% or less.

[0302] Embodiment 117. The copper clad laminate of any one of embodiments 59, 60, and 61, wherein the porosity of the copper clad laminate is about 10% by volume or less.

[0303] Embodiment 118. A copper clad laminate according to any one of embodiments 59, 60, and 61, wherein the copper clad laminate has a peel strength between the copper foil layer and the dielectric substrate of at least about 6 Ib / in.

[0304] Embodiment 119. A printed circuit board including a copper clad laminate, the copper clad laminate including a copper foil layer and a dielectric composite covering the copper foil layer, the dielectric composite including a dielectric substrate covering a reinforcing fabric layer, the dielectric substrate including a resin matrix component and a ceramic filler component, the ceramic filler component including a first filler material, and the particle size distribution of the first filler material is D 10 is at least about 0.5 microns and not more than about 1.6 microns, and D 50 is at least about 0.8 microns and not more than about 2.7 microns, and D 90 is at least about 1.5 microns and not more than about 4.7 microns.

[0305] Embodiment 120. A printed circuit board comprising a copper clad laminate, the copper clad laminate comprising a copper foil layer and a dielectric composite covering the copper foil layer, the dielectric composite comprising a dielectric substrate covering a reinforcing fabric layer, the dielectric substrate comprising a resin matrix component and a ceramic filler component, the ceramic filler component comprising a first filler material, the first filler material further comprising an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 Particle size distribution measurements equal, printed circuit board.

[0306] Embodiment 121. A printed circuit board including a copper clad laminate, the copper clad laminate including a copper foil layer and a dielectric composite covering the copper foil layer, the dielectric composite including a dielectric substrate covering a reinforcing fabric layer, the dielectric substrate including a resin matrix component and a ceramic filler component, the ceramic filler component including a first filler material, the first filler material further including a ceramic filler having an average particle size of about 10 microns or less and an average particle size of about 8m. 2 and an average surface area of ​​less than or equal to 1 / g.

[0307] Embodiment 122. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the reinforcing fabric layer comprises a glass fabric material.

[0308] Embodiment 123. The printed circuit board of any one of embodiments 119, 120, and 121, wherein the reinforcing fabric layer comprises an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric, polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or a combination thereof.

[0309] Embodiment 124. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the reinforcing fabric layer comprises a woven fabric of a fibrous material.

[0310] Embodiment 125. The printed circuit board of embodiment 124, wherein the fiber material comprises E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

[0311] Embodiment 126. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the reinforcing fabric layer comprises a nonwoven fabric of a fibrous material.

[0312] Embodiment 127. The printed circuit board of embodiment 126, wherein the fiber material comprises E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or a combination thereof.

[0313] Embodiment 128. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the reinforcing fabric layer has a thickness of at least about 4 microns.

[0314] Embodiment 129. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the thickness of the reinforcing fabric layer is about 1 mm or less.

[0315] Embodiment 130. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the dielectric composite further comprises an adhesive layer between the reinforcing fabric and the dielectric substrate.

[0316] Embodiment 131. The printed circuit board of embodiment 130, wherein the adhesive layer comprises PFA, FEP, or any combination thereof.

[0317] Embodiment 132. The printed circuit board of embodiment 130, wherein the adhesive layer has a thickness of at least about 0.1 microns.

[0318] Embodiment 133. The printed circuit board of embodiment 130, wherein the adhesive layer has a thickness of about 25 microns or less.

[0319] Embodiment 134. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the tensile modulus of the dielectric composite is at least about 200 MPa.

[0320] Embodiment 135. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the tensile modulus of the dielectric composite is about 100,000 MPa or less.

[0321] Embodiment 136. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the dielectric composite has a storage modulus at room temperature of at least about 1200 MPa.

[0322] Embodiment 137. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the storage modulus of the dielectric composite at room temperature is about 100,000 MPa or less.

[0323] Embodiment 138. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the dielectric composite has a storage modulus at 70°C of at least about 600 MPa.

[0324] Embodiment 139. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the storage modulus of the dielectric composite at 70°C is about 100,000 MPa or less.

[0325] Embodiment 140. The printed circuit board of any one of embodiments 119, 120, and 121, wherein the yield point of the dielectric composite is at least about 2 MPa.

[0326] Embodiment 141. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the yield point of the dielectric composite material is about 400 MPa or less.

[0327] Embodiment 142. The particle size distribution of the first filler material is at least about 0.5 microns and no more than about 1.6 microns D 10 122. The printed circuit board of any one of embodiments 120 and 121, comprising:

[0328] Embodiment 143. The particle size distribution of the first filler material is at least about 0.8 microns and no greater than about 2.7 microns D 50 122. The printed circuit board of any one of embodiments 120 and 121, comprising:

[0329]

[0046] Embodiment 144. The particle size distribution of the first filler material is at least about 1.5 microns and no greater than about 4.7 microns D 90 122. The printed circuit board of any one of embodiments 120 and 121, comprising:

[0330] Embodiment 145. The printed circuit board of embodiment 119, wherein the first filler material further comprises an average particle size of about 10 microns or less.

[0331] Embodiment 146. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the average particle size of the first filler material is about 10 microns or less.

[0332] Embodiment 147. The first filler material has a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler material 50 122. The printed circuit board of any one of embodiments 119 and 121, wherein the particle size distribution measurement is equal to the particle size distribution measurement.

[0333] Embodiment 148. The first filler material is about 8 m 2 121. The printed circuit board of any one of embodiments 119 and 120, further having an average surface area of ​​less than or equal to 1 / g.

[0334] Embodiment 149. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the first filler material comprises a silica-based compound.

[0335] Embodiment 150. The printed circuit board of any one of embodiments 119, 120, and 121, wherein the first filler material comprises silica.

[0336] Embodiment 151. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the resin matrix comprises a perfluoropolymer.

[0337] Embodiment 152. The printed circuit board of embodiment 151, wherein the perfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0338] Embodiment 153. The printed circuit board of embodiment 151, wherein the perfluoropolymer comprises polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0339] Embodiment 154. The printed circuit board of embodiment 151, wherein the perfluoropolymer is polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0340] Embodiment 155. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the content of the resin matrix component is at least about 45% by volume, based on the total volume of the dielectric substrate.

[0341] Embodiment 156. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the content of the resin matrix component is about 63 volume % or less, based on the total volume of the dielectric substrate.

[0342] Embodiment 157. The printed circuit board of embodiment 151, wherein the perfluoropolymer content is at least about 45% by volume, based on the total volume of the dielectric substrate.

[0343] Embodiment 158. A printed circuit board as described in embodiment 151, wherein the perfluoropolymer content is about 63 volume % or less based on the total volume of the dielectric substrate.

[0344] Embodiment 159. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the content of the ceramic filler component is at least about 45 volume % relative to the total volume of the dielectric substrate.

[0345] Embodiment 160. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the content of the ceramic filler component is about 57 volume % or less, based on the total volume of the dielectric substrate.

[0346] Embodiment 161. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the content of the first filler material is at least about 80 volume % based on the total volume of the ceramic filler component.

[0347] Embodiment 162. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the content of the first filler material is about 100% by volume or less, based on the total volume of the ceramic filler component.

[0348] Embodiment 163. The printed circuit board of any one of embodiments 119, 120, and 121, wherein the ceramic filler component further comprises a second filler material.

[0349] Embodiment 164. The printed circuit board of embodiment 163, wherein the second filler material comprises a high dielectric constant ceramic material.

[0350] Embodiment 165. The printed circuit board of embodiment 164, wherein the high dielectric constant ceramic material has a dielectric constant of at least about 14.

[0351] Embodiment 166. The printed circuit board of embodiment 164, wherein the ceramic filler component further comprises TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof.

[0352] Embodiment 167. The printed circuit board of embodiment 163, wherein the content of the second filler material is at least about 1 volume % based on the total volume of the ceramic filler component.

[0353] Embodiment 168. The printed circuit board of embodiment 163, wherein the content of the second filler material is about 20 volume % or less, based on the total volume of the ceramic filler component.

[0354] Embodiment 169. The printed circuit board of any one of embodiments 119, 120, and 121, wherein the ceramic filler component is at least about 97% amorphous.

[0355] Embodiment 170. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the porosity of the dielectric substrate is about 10% by volume or less.

[0356] Embodiment 171. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the average thickness of the dielectric substrate is at least about 10 microns.

[0357] Embodiment 172. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the average thickness of the dielectric substrate is less than or equal to about 2000 microns.

[0358] Embodiment 173. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the dissipation factor (5GHz, 20%RH) of the dielectric substrate is less than or equal to about 0.005.

[0359] Embodiment 174. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the dissipation factor (5GHz, 20%RH) of the dielectric substrate is less than or equal to about 0.0014.

[0360] Embodiment 175. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the dielectric substrate has a thermal expansion coefficient in the X-axis, Y-axis, or Z-axis of about 80 ppm / °C or less.

[0361] Embodiment 176. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the moisture absorption rate of the dielectric substrate is about 0.05% or less.

[0362] Embodiment 177. A printed circuit board according to any one of embodiments 119, 120, and 121, wherein the porosity of the copper clad laminate is about 10% by volume or less.

[0363] Embodiment 178. The printed circuit board of any one of embodiments 119, 120, and 121, wherein the peel strength between the copper foil layer of the copper clad laminate and the printed circuit board is at least about 6 Ib / in.

[0364] Embodiment 179. A method of forming a dielectric composite, comprising: providing a reinforcing fabric layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture on a dielectric substrate overlying the reinforcing fabric layer, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material having a particle size distribution of at least about 0.5 microns and no greater than about 1.6 microns, D. 10 , D of at least about 0.8 microns and not more than about 2.7 microns 50 and D of at least about 1.5 microns and not more than about 4.7 microns. 90 A method comprising:

[0365] Embodiment 180. A method of forming a dielectric composite, comprising: providing a reinforcing fabric layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture on a dielectric substrate overlying the reinforcing fabric layer, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material having an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 Equivalent to particle size distribution measurement, method.

[0366] Embodiment 181. A method of forming a dielectric composite, comprising providing a reinforcing fabric layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture on a dielectric substrate overlying the reinforcing fabric layer, the ceramic filler precursor component comprising a first filler precursor material having an average particle size of about 10 microns or less and an average particle size of about 8 microns or less. 2 and an average surface area of ​​less than or equal to 1 / g.

[0367] Embodiment 182. A method of forming a copper clad laminate, comprising: providing a copper foil layer; providing a reinforcing fabric layer overlying the copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric substrate overlying the reinforcing fabric layer, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material having a particle size distribution of at least about 0.5 microns and no greater than about 1.6 microns, D. 10 , D of at least about 0.8 microns and not more than about 2.7 microns 50 and D of at least about 1.5 microns and not more than about 4.7 microns. 90 A method comprising:

[0368] Embodiment 183. A method of forming a copper clad laminate, comprising: providing a copper foil layer; providing a reinforcing fabric layer overlying the copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture on a dielectric substrate overlying the reinforcing fabric layer, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material further comprising an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 Equivalent to particle size distribution measurement, method.

[0369] Embodiment 184. A method of forming a copper clad laminate, comprising: providing a copper foil layer; providing a reinforcing fabric layer overlying the copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture on a dielectric substrate overlying the reinforcing fabric layer, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material having an average particle size of about 10 microns or less and an average particle size of about 8 microns or less. 2 / g or less.

[0370] Embodiment 185. A method of forming a printed circuit board, comprising: providing a copper foil layer; providing a reinforcing fabric layer overlying the copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric substrate overlying the reinforcing fabric layer, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material having a particle size distribution of at least about 0.5 microns and no greater than about 1.6 microns, D.10 , D of at least about 0.8 microns and not more than about 2.7 microns 50 and D of at least about 1.5 microns and not more than about 4.7 microns. 90 A method comprising:

[0371] Embodiment 186. A method of forming a printed circuit board, comprising: providing a copper foil layer; providing a reinforcing fabric layer overlying the copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric substrate overlying the reinforcing fabric layer, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material further comprising an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D 90 -D 10 ) / D 50 is equal to D 90 is the D of the first filler precursor material 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 D is equal to the particle size distribution measurement 50 is the D of the first filler precursor material 50 Equivalent to particle size distribution measurement, method.

[0372] Embodiment 187. A method of forming a printed circuit board, comprising: providing a copper foil layer; providing a reinforcing fabric layer overlying the copper foil layer; combining a resin matrix precursor component and a ceramic filler precursor component to form a forming mixture; and forming the forming mixture into a dielectric substrate overlying the reinforcing fabric layer, wherein the ceramic filler precursor component comprises a first filler precursor material, the first filler precursor material having an average particle size of about 10 microns or less and an average particle size of about 8 microns or less. 2 / g or less. EXAMPLES

[0373] The concepts described herein are further described in the following examples, which do not limit the scope of the invention described in the claims.

[0374] Example 1 Sample dielectric substrates S1 through S12 were constructed and formed in accordance with certain embodiments described herein.

[0375] Each sample dielectric substrate was formed using a cast film process. In this process, a polyimide carrier belt pretreated with a fluoropolymer passes through a dip pan containing an aqueous forming mixture (i.e., a combination of the resin matrix component and the ceramic filler component) at the base of a coating tower. The coated carrier belt then passes through a metering zone where a metering bar removes excess dispersion from the coated carrier belt. After the metering zone, the coated carrier belt passes through a drying zone maintained at a temperature of 82°C to 121°C to evaporate water. The coated carrier belt with the dried film then passes through a bake zone maintained at a temperature of 315°C to 343°C. Finally, the carrier belt passes through a melting zone maintained at a temperature of 349°C to 399°C to sinter, i.e., coalesce, the resin matrix material. The coated carrier belt then passes through a cooling plenum from which it can be directed either to a subsequent dip pan or to a stripping device to begin forming additional layers of film. Once the desired film thickness is achieved, the film is peeled off the carrier belt.

[0376] The resin matrix component of each of the sample dielectric substrates S1 to S12 is polytetrafluoroethylene (PTFE). Further construction and composition details of each of the dielectric substrates S1 to S12 are summarized in Table 1 below.

[0377] [Table 1]

[0378] Particle size distribution measurements of the silica-based component types used in sample dielectric substrates S1 to S12 (i.e., D 10 , D 50 , and D. 90 ), particle size distribution span, average particle size, and BET surface area are summarized in Table 2 below.

[0379] [Table 2]

[0380] The performance characteristics of each sample dielectric substrate S1 through S12 are summarized below in Table 3. The summarized performance characteristics include the dielectric constant of the sample dielectric substrate measured at 5 GHz ("Dk(5 GHz)"), the dissipation factor of the substrate measured at 5 GHz at 20% RH ("Df(5 GHz,20% RH)"), the dissipation factor of the sample dielectric substrate measured at 5 GHz at 80% RH ("Df(5 GHz,80% RH)"), and the coefficient of thermal expansion ("CTE") of the sample dielectric substrate.

[0381] [Table 3]

[0382] Example 2 For comparison purposes, comparative sample dielectric substrates CS1 to CS10 were constructed and formed.

[0383] Each comparative sample dielectric substrate was formed using a cast film process. In this process, a polyimide carrier belt pretreated with a fluoropolymer passes through a dip pan containing an aqueous forming mixture (i.e., a combination of the resin matrix component and the ceramic filler component) at the base of a coating tower. The coated carrier belt then passes through a metering zone where a metering bar removes excess dispersion from the coated carrier belt. After the metering zone, the coated carrier belt passes through a drying zone maintained at a temperature of 82°C to 121°C to evaporate water. The coated carrier belt with the dried film then passes through a bake zone maintained at a temperature of 315°C to 343°C. Finally, the carrier belt passes through a melting zone maintained at a temperature of 349°C to 399°C to sinter, i.e., coalesce, the resin matrix material. The coated carrier belt then passes through a cooling plenum from which it can be directed either to a subsequent dip pan or to a stripping device to begin forming additional layers of film. Once the desired film thickness is achieved, the film is peeled from the carrier belt.

[0384] The resin matrix component of each of the comparative sample dielectric substrates CS1 to CS10 is polytetrafluoroethylene (PTFE). Further construction and composition details of each of the dielectric substrates CS1 to CS10 are summarized in Table 4 below.

[0385] [Table 4]

[0386] Measured particle size distributions (i.e., D 10 , D 50 , and D. 90 ), particle size distribution span, average particle size, and BET surface area are summarized in Table 2 below.

[0387] [Table 5]

[0388] The performance characteristics of each sample dielectric substrate CS1 through S9 are summarized below in Table 6. The summarized performance characteristics include the dielectric constant of the sample dielectric substrate measured at 5 GHz ("Dk(5GHz)"), the dissipation factor of the substrate measured at 5 GHz at 20% RH ("Df(5GHz,20%RH)"), the dissipation factor of the sample dielectric substrate measured at 5 GHz at 80% RH ("Df(5GHz,80%RH)"), and the coefficient of thermal expansion ("CTE") of the sample dielectric substrate.

[0389] [Table 6]

[0390] Example 3 Sample dielectric composites S13 to S17 were constructed and formed according to certain embodiments described herein, each of which includes at least one dielectric substrate formed as described above with reference to sample dielectric substrate S8 and disposed above and / or below a reinforcing fabric.

[0391] Further detailed configurations of each dielectric composite S13 to S17 are summarized in Table 7 below. To describe the structural configuration of each dielectric composite S13 to S17, "B" represents the dielectric substrate, "R1" represents the reinforcing fabric with warp count 66, weft count 68, yarn type D900 1 / 0, weight 0.88 osy, and thickness 1.1 mil, "R2" represents the reinforcing fabric with warp count 54, weft count 54, yarn type D450 1 / 0, weight 1.41 osy, and thickness 1.7 mil, and "X" represents the adhesive layer.

[0392] [Table 7]

[0393] The performance characteristics of each sample dielectric substrate S13 through S17 are summarized below in Table 8. The summarized performance characteristics include yield strength measured in accordance with IPC-TM-650 2-4-18.3, tensile strength measured in accordance with IPC-TM-650 2-4-18.3, storage modulus measured in accordance with IPC-TM-650 2-4-18.3, dielectric constant measured at 5 GHz ("Dk(5GHz)"), dissipation factor of the substrate measured at 5 GHz at 20% RH ("Df(5GHz,20%RH)"), dissipation factor of the sample dielectric substrate measured at 5 GHz at 80% RH ("Df(5GHz,80%RH)"), and coefficient of thermal expansion ("CTE") of the sample dielectric substrate.

[0394] [Table 8]

[0395] It should be noted that in the general description or examples, not all of the activities described above are required, some of the specific activities may not be required, and one or more additional activities may be performed in addition to the activities described. Still further, the order in which the activities are listed is not necessarily the order in which they are performed.

[0396] Benefits, other advantages, and solutions to problems have been described above with respect to particular embodiments. However, the benefits, advantages, solutions to problems, and any features that may provide or make more prominent any benefit, advantage, or solution should not be construed as critical, necessary, or essential features of any or all of the claims.

[0397] The specification and drawings of the embodiments described herein are intended to provide a general understanding of the structure of the various embodiments. The specification and drawings are not intended to serve as an exhaustive and comprehensive description of all elements and features of the apparatus and systems that use the structures or methods described herein. Separate embodiments may be provided in combination in a single embodiment, and conversely, various features that are described in the context of a single embodiment for brevity may be provided separately or in any subcombination. Furthermore, references to values ​​described in ranges include each and every value within that range. Many other embodiments may become apparent to those skilled in the art only after reading this specification. Other embodiments may be used and derived from this disclosure, such that structural substitutions, logical substitutions, or other changes may be made without departing from the scope of this disclosure. Thus, this disclosure should be considered as illustrative and not restrictive.

Claims

1. 1. A dielectric composite comprising a dielectric substrate overlying a reinforcing fabric layer, the dielectric substrate comprising: A resin matrix component; a ceramic filler component, the ceramic filler component comprises a first filler material; The particle size distribution of the first filler material is D of at least about 0.5 microns and not more than about 1.6 microns １０ and, D of at least about 0.8 microns and not more than about 2.7 microns ５０ and, D of at least about 1.5 microns and no greater than about 4.7 microns ９０ and Dielectric composite.

2. 1. A dielectric composite comprising a dielectric substrate overlying a reinforcing fabric layer, the dielectric substrate comprising: A resin matrix component; a ceramic filler component, the ceramic filler component comprises a first filler material; The first filler material further comprises an average particle size of about 10 microns or less and a particle size distribution span (PSDS) of about 5 or less, the PSDS being (D ９０ -D １０ ) / D ５０ is equal to D ９０ is the D of the first filler material ９０ D is equal to the particle size distribution measurement １０ is the D of the first filler material １０ D is equal to the particle size distribution measurement ５０ is the D of the first filler material ５０ Dielectric composite, equal to particle size distribution measurement.

3. 1. A dielectric composite comprising a dielectric substrate overlying a reinforcing fabric layer, the dielectric substrate comprising: A resin matrix component; a ceramic filler component, the ceramic filler component comprises a first filler material; The first filler material has an average particle size of about 10 microns or less and a particle size of about 8 mm. ２ and an average surface area of ​​less than or equal to 1 / g.

4. The dielectric composite of claim 1 , 2 or 3 , wherein the reinforcing fabric layer comprises a glass fabric material.

5. 4. The dielectric composite of any one of claims 1, 2 and 3, wherein the reinforcing fabric layer comprises an E-glass fabric, an NE-glass fabric, an S-glass fabric, an L-glass fabric, a D-glass fabric, a quartz glass fabric, an aromatic polyamide fabric (i.e., Kevlar fabric), a polytetrafluoroethylene (PTFE) fabric, a polyester fabric, a liquid crystal polymer (LCP) fabric, or a combination thereof.

6. The dielectric composite of claim 1 , 2 or 3 , wherein the reinforcing fabric layer comprises a woven fabric of a fibrous material.

7. 7. The dielectric composite of claim 6, wherein the fibrous material comprises E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

8. The dielectric composite of claim 1 , 2 or 3 , wherein the reinforcing fabric layer comprises a nonwoven fabric of fibrous material.

9. 9. The dielectric composite of claim 8, wherein the fibrous material comprises E-glass fabric, NE-glass fabric, S-glass fabric, L-glass fabric, D-glass fabric, quartz glass fabric, aromatic polyamide fabric (i.e., Kevlar fabric), polytetrafluoroethylene (PTFE) fabric, polyester fabric, liquid crystal polymer (LCP) fabric, or any combination thereof.

10. 4. The dielectric composite of claim 1, 2, or 3, wherein the reinforcing fabric layer has a thickness of at least about 4 microns.

11. 4. The dielectric composite of claim 1, 2, or 3, wherein the reinforcing fabric layer has a thickness of about 1 mm or less.

12. The dielectric composite of claim 1 , 2 or 3 , further comprising an adhesive layer between the reinforcing fabric and the dielectric substrate.

13. 13. The dielectric composite of claim 12, wherein the adhesive layer comprises PFA, FEP, or any combination thereof.

14. The dielectric composite of claim 12 , wherein the adhesion layer has a thickness of at least about 0.1 microns.

15. The dielectric composite of claim 12 , wherein the adhesive layer has a thickness of about 25 microns or less.

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