Vacuum layer deposition apparatus and method for depositing layers on substrates, in particular substrates containing depressions in the surface to be coated - Patents.com

Abstract

1. A vacuum layer deposition apparatus comprising: a vacuum coating chamber having an interior space; a material source configured to generate electrically positively charged particles of a material to be deposited on a substrate within the interior space; a substrate holder having an extended metal or dielectric material surface exposed to the interior space; and an RF plasma source having a first electrode electrically operably RF connectable or electrically operably RF connected to a first tap of an RF generator and a second electrode electrically operably RF connectable or electrically operably RF connected to a second tap of the RF generator. and an RF plasma source, wherein the first electrode comprises a first electrode surface of a metal or dielectric material, the first electrode surface being a portion of the entire surface of the first electrode that is freely exposed to the interior space, the second electrode comprises a second electrode surface of a metal or dielectric material, the second electrode surface being a portion of the entire surface of the second electrode that is freely exposed to the interior space, the extended surface of the substrate holder being at least a portion of the first electrode surface, and the second electrode surface being at least 1.5 times larger than the first electrode surface. The invention is further directed to a method for vacuum process deposition of a layer on a substrate.

Description

[Background technology]

[0001] Vacuum processes for coating substrates containing recesses, such as pinholes, vias, trenches, in the surface to be coated are challenging tasks. Several approaches have been reported, for example in US Pat. No. 7,381,657 (B2) or US Pat. No. 7,544,276 (B2), by sputter deposition using RF bias on the substrate holder and pulsed DC power on the target electrode of the sputtering source. HIPIMS sputtering, also called HPPMS sputtering, has also been reported for the above-mentioned purposes, i.e., using pulsed DC sputtering operating at very high peak currents and with a very low duty cycle, i.e., the ratio of pulse on time to pulse repetition period. HIPIMS is described, for example, in US Pat. No. 9,355,824, US Pat. No. 8,475,634, US Pat. No. 1,0692,707 (B2).

[0002] Definition: When dealing with HIPIMS applied between two electrodes, we understand throughout this specification and claims a pulsed DC with a duty cycle (time range of one pulse relative to the time range of the respective pulse repetition period) of 0.01 to 0.1, whereby a pulse repeatedly applied with the indicated duty cycle may be replaced by a respective packet of multiple pulses. Under Rf, understand frequencies in the range of 1 to 90 MHz, for example 13.56 MHz. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent No. 7381657 (B2) [Patent Document 2] US Patent No. 7544276 (B2) [Patent Document 3] U.S. Patent No. 9,355,824 [Patent Document 4] U.S. Patent No. 8,475,634 [Patent Document 5] US Patent No. 10692707(B2) [Patent Document 6] U.S. Patent No. 6,248,219 Summary of the Invention [Problem to be solved by the invention]

[0004] The aim of the present invention is to propose an alternative to the vacuum process of coating substrates, in particular substrates having recesses such as pinholes, vias, trenches in the surface to be coated, the walls of such recesses having to be coated as well, until filling such recesses without leaving hollow spaces encapsulated in the recesses. [Means for solving the problem]

[0005] The purpose of this is to a vacuum coating chamber having an interior space; a material source configured to generate electrically positively charged particles of a material to be deposited on the substrate and within the interior space of the vacuum coating chamber; The problem is solved by the vacuum layer deposition apparatus according to the present invention, which comprises:

[0006] The device is a substrate holder having an extended metal or dielectric material surface exposed to said interior space; 1. An RF plasma source comprising: a first electrode electrically operably RF connectable or electrically operably RF connected to a first tap of the RF generator; a second electrode electrically operably RF connectable or electrically operably RF connected to a second tap of the RF generator; an RF plasma source comprising: It further comprises:

[0007] Definition: By the term "electrically operably RF connectable or electrically operably RF connected" it is understood to be electrically connectable or connected, directly or indirectly, such that an electrical RF signal of that characteristic, e.g., frequency, generated by an RF generator may pass through. Thus, such an electrically operative RF connection may be for both DC and RF signals, or may be for RF signals only, with DC signals being blocked.

[0008] The first electrode to be treated comprises a first electrode surface of a metal or dielectric material, which is that part of the total surface of the first electrode that is freely exposed to the interior space.

[0009] The second electrode comprises a second electrode surface of a metal or dielectric material, the second electrode surface being that portion of the total surface of the second electrode that is freely exposed to the interior space.

[0010] Thereby, the extended surface of the substrate holder is a part of the first electrode surface, and the second electrode surface is at least 1.5 times larger than the first electrode surface.

[0011] From vacuum etching techniques it is known to provide the substrate to be etched on a smaller electrode surface opposite a larger electrode surface and to operatively connect an RF generator to these electrode surfaces. Between the electrode surfaces to be treated, an Rf plasma discharge is generated. The drop in potential from the plasma potential to the smaller electrode surface is greater than the drop in potential from the plasma potential to the larger electrode surface. This phenomenon is known according to König's law, as described, for example, in U.S. Pat. No. 6,248,219 to Wellerdieck. A greater drop in potential leads to an increased directional acceleration of the positive etching ions, i.e., usually Ar ions, towards the smaller electrode surface. Thus, the substrate deposited on the smaller electrode surface is mainly etched, while the larger electrode surface is mainly coated with material etched from the smaller electrode.

[0012] According to the present invention, according to the fact that the extended metal or dielectric material surface of the substrate holder is part of a smaller first electrode surface relative to a second electrode surface, and the first electrode surface and the second electrode surface are both operably connected or operably connectable to respective taps of an Rf generator so as to generate an Rf plasma between them, the phenomenon of directional acceleration of positively charged particles towards the smaller first electrode surface and thus towards the substrate on the substrate holder is inventively utilized to perform such directional acceleration of positively charged particles of the material to be deposited on the substrate.

[0013] This directional acceleration of the positively charged particles of the material to be deposited on the substrate also leads to the coating of depressions in the surface of the substrate.

[0014] Techniques well known for etching purposes have therefore proven to be highly suitable for coating purposes in particular in recesses.

[0015] In one embodiment, the first electrode and therefore the substrate holder as well as the vacuum coating chamber are connected to the ground potential of the vacuum coating apparatus, which has the advantage that substrate transfer and / or substrate exchange by or on the substrate holder is performed at that ground potential, thus avoiding problems of arcing and electric field perturbations. Thereby, the substrate holder may be part of or be provided by a substrate transfer mechanism that transfers substrates to and from the vacuum coating chamber apparatus via a uni- or bi-directionally acting load lock directly in the vacuum coating chamber and / or via a uni- or bi-directionally acting load lock at a remote atmosphere-to-vacuum interface.

[0016] Therefore, in one embodiment of the apparatus according to the invention, a transfer mechanism for the substrate holder is provided which is adapted to transfer the substrate holder to and from a position where a substrate on said substrate holder is in a coating position.

[0017] An embodiment of an apparatus according to the invention comprises a robot adapted to load and unload a substrate onto and from the extended surface of the substrate holder.

[0018] In one embodiment of the apparatus according to the invention, at least a part of the second electrode extends opposite the substrate holder and faces the substrate holder.

[0019] In one embodiment of the apparatus according to the invention, the material source configured to generate electrically positively charged particles comprises a source of material and a further plasma source configured to ionize material delivered from said source of material.

[0020] In some applications of the apparatus, the Rf plasma generated between the first and second electrode surfaces does not sufficiently ionize the material delivered by the source of material, therefore, in this embodiment, a further plasma source is provided to generate a desired density of electrically positively charged particles of the material delivered by the source of material into the interior space of the vacuum coating chamber.

[0021] Despite the fact that the further plasma source to be handled may be one of various known types of plasma sources, for example a microwave plasma source, according to one embodiment of the device according to the invention, the further plasma source comprises a third electrode and a fourth electrode exposed to the interior space of the vacuum coating chamber, each electrically operably connected or each electrically connectable to a tap of the further generator.

[0022] Due to the fact that one of the third and fourth electrodes is common to the second electrode, the surface of that one electrode freely exposed to the interior space of the vacuum coating chamber is utilized to increase the second electrode surface.

[0023] In one embodiment of the apparatus according to the invention, the third electrode and one of the fourth handling electrodes are electrically insulated from the substrate holder and are arranged around the substrate holder.

[0024] Thereby, a further plasma spreads throughout the reaction space adjacent to the substrate, one electrode of which is applied with the respective electrical polarity and which can extract electrons from the substrate to be coated.

[0025] In one embodiment of the device according to the invention the further generator handled is a DC or pulsed DC generator, in one embodiment a HIPIMS generator.

[0026] The plasma generated by these types of further generators is best suited to generating high density, electrically positively charged particles of the material to be deposited on the substrate and delivered by the source of material.

[0027] In one embodiment of the device according to the invention, the material source configured to generate electrically positively charged particles comprises a source of material, which comprises at least one gas supply line discharging gaseous material into the interior space and is in fluid communication with a gas tank containing a gas, in particular a reactive gas.

[0028] In one embodiment of the device according to the invention, the material source configured to generate electrically positively charged particles comprises at least one source delivering material from a solid or liquid.

[0029] Thus, the material deposited on the substrate is based on a gaseous material that reacts and becomes electrically positively charged by the influence of Rf plasma and / or additional plasma provided, for example, in a PECVD deposition process, or on a solid material that also becomes electrically positively charged by the influence of Rf plasma and / or additional plasma provided, for example, in a cathode sputter deposition process or thermal or electron beam evaporation. In a cathode sputter deposition process, the additional plasma is the plasma generated by the cathode sputtering process. It should be noted that the material delivered by the material source may be of solid or liquid origin. For example, cathode sputtering may be performed from a solid material target, but for some materials, it may also be performed from a liquid material target, such as Ga, In, Hg.

[0030] A combination of these two techniques is carried out in reactive processes, where a solid material reacts with a reactive gas as for reactive cathode sputtering, reactive heat or electron beam evaporation.

[0031] In one embodiment of the device according to the invention, the at least one source delivering the solid material is a cathode sputtering source, the target of which is one electrode of the further plasma source.

[0032] Thus, on the one hand, the cathode sputtering source generates the solid material to be deposited, and on the other hand, the plasma of the cathode sputtering source provides for ionizing the sputtered material.

[0033] In one embodiment of the apparatus according to the invention, the cathode sputtering source is a magnetron sputtering source.

[0034] In one embodiment of the apparatus according to the invention, the magnetron sputtering source is a planar magnetron sputtering source or a magnetron sputtering source having a cylindrical solid material target which is drivably rotatable about the axis of the cylindrical target.

[0035] One embodiment of an apparatus according to the present invention comprises a source controller operably connected to a control input of the Rf generator and configured to control at least one of the on / off timing of the Rf generator and the output power of the Rf generator.

[0036] In one embodiment of the apparatus according to the invention, the material source configured to generate electrically positively charged particles comprises a source of material and a further plasma source configured to ionize material delivered from said source of material and operably connected to the electrical supply source, This embodiment further comprises a source controller operably connected to a control input of the electrical supply source and configured to control at least one of the on / off timing of the electrical supply source and the output power of the electrical supply source.

[0037] One embodiment of the apparatus according to the present invention comprises two or more material sources, and a source controller is operably connected to the two or more material sources and configured to control the on / off timing of the two or more material sources relative to one another.

[0038] Thus, in one embodiment of the device according to the invention, one or more of the following features are provided: An embodiment includes two or more material sources, each configured to generate a respective electrically positively charged particle, and a source controller operatively connected to each of the two or more material sources and configured to control the on / off timing of each of the two or more material sources relative to one another and / or the velocity of the electrically positively charged particles output by each material source. At least some of the two or more material sources each comprise a source of material and a further plasma source configured to ionize material delivered from the respective material source, the plasma source operably connected to the electrical supply source and comprising a source controller operably connected to a control input of the respective electrical supply source and configured to control at least one of the on / off timing of the respective electrical supply source and the output power of the respective electrical supply source. The source controller is operatively connected to the control input of the Rf generator and configured to control at least one of the on / off timing of the Rf generator and the output power of the Rf generator.

[0039] An embodiment of the apparatus according to the invention comprises a transfer mechanism configured to transport a substrate to and from a coating position in said vacuum coating chamber, said substrate holder being part of said transfer mechanism.

[0040] In one embodiment of the apparatus according to the invention, the transport mechanism comprises a conveyor driveably movable along a plane parallel to the extended surface of the substrate conveyor below the coating position, the substrate cooperating with a lift driveably lifting the substrate holder from the conveyor at a position where the substrate on the substrate holder is in the coating position.

[0041] An embodiment of an apparatus according to the invention comprises a handling robot for loading and unloading substrates onto and from a substrate holder.

[0042] In one embodiment of the apparatus according to the invention, the substrate holder is operated at ground potential, at least in the position where the substrate thereon is in the coating position.

[0043] Each of the described embodiments may be implemented in combination with one or more of the other embodiments, unless such embodiments are inconsistent.

[0044] The object of the present invention is further solved by a method for vacuum process depositing a layer on a substrate, in particular on a substrate comprising recesses in the surface to be coated, or a method for producing such a substrate coated with a vacuum process deposited layer, the method comprising the steps of: Providing a substrate on a first electrode surface in an evacuated vacuum chamber; generating, in a vacuum chamber, electrically positively charged particles of the material to be deposited on the substrate; directionally accelerating positively charged particles toward a surface of a substrate by generating an Rf plasma between a first electrode surface and a second electrode surface, the second electrode surface being at least 1.5 times larger than the first electrode surface; Includes.

[0045] One variation of the method according to the invention involves intermittently enabling and disabling the RF plasma discharge during the deposition process.

[0046] One variation of the method according to the invention involves generating positively charged particles of different materials at staggered times during the deposition process.

[0047] In one variant of the method according to the invention, the step of generating positively charged particles comprises the step of generating a further plasma in the vacuum vessel.

[0048] One variant of the method according to the invention comprises the step of utilizing the second electrode surface as one electrode surface for generating a further plasma.

[0049] In one variant of the method according to the invention, the step of generating positively charged particles comprises a step of supplying a gas into a vacuum vessel.

[0050] In one variant of the method according to the invention, the step of generating positively charged particles comprises a step of liberating material from a solid or liquid material in a vacuum vessel.

[0051] In one variant of the method according to the invention, the step of generating positively charged particles comprises a step of cathodic sputtering at least one target of solid or liquid material, in particular a step of magnetron sputtering at least one target.

[0052] In one variant of the method according to the invention, the step of cathodic sputtering comprises the step of providing a counter electrode relative to the target, the counter electrode looping around the substrate.

[0053] In one variant of the method according to the invention, the at least one target is operated at the potential of the second electrode.

[0054] In one variant of the method according to the invention, the step of generating positively charged particles comprises magnetron sputtering and electrically supplying the sputtering by one of DC, pulsed DC, in particular HIPIMS.

[0055] In one variant of the method according to the invention, the step of generating the positively charged particles comprises performing magnetron sputtering using at least one of a planar magnetron source and a magnetron source having a cylindrical target that is drivable to rotate about an axis.

[0056] One variant of the method according to the invention comprises the steps of providing a substrate on a substrate holder and drivingly moving the substrate holder by a transport mechanism to and from a position where the substrate is in a coating position.

[0057] One variant of the method according to the invention comprises a step of transporting the substrate in and out of the vacuum vessel by a conveyor of a transfer mechanism, in particular by unidirectional movement of the conveyor.

[0058] One variation of the method according to the invention includes loading and unloading the substrate onto and from the substrate holder by a robot.

[0059] Note: The second electrode may be large in larger coating machines, so that too much capacitance to the grounded wall of the vacuum coating chamber may become an issue. In that case it may be advisable to use an electrically floating metal interlayer between the second electrode and the grounded wall.

[0060] Each variant of the method according to the invention can be implemented in combination with one or more other variants, unless this is inconsistent.

[0061] The device and method according to the invention are further illustrated with the aid of the figures. [Brief description of the drawings]

[0062] [Figure 1] 1 is a schematic and simplified diagram of a general principle embodiment of a device according to the invention for operating the method according to the invention; [Diagram 2] 2 is a diagram of a possible operation scheme of the device and method according to FIG. 1 along a time axis; [Diagram 3] FIG. 2 is a schematic and simplified representation of an embodiment of an apparatus according to the invention for operating a variant of the method according to the invention, thereby producing a material to be deposited on a substrate from the gas phase, for example for PECVD. [Figure 4] 2 is a schematic and simplified view of a portion of a common electrode of an embodiment of a device according to the invention for operating a method according to the invention; FIG. [Diagram 5] FIG. 2 is a schematic and simplified representation of an embodiment of an apparatus according to the invention for operating a variant of the method according to the invention, in which the step of generating a material to be deposited on a substrate comprises a step of generating the material from the gas phase; [Figure 6]FIG. 2 is a schematic and simplified diagram of an embodiment of an apparatus according to the invention for operating a variant of the method according to the invention, in which the step of generating a material to be deposited on a substrate comprises a step of generating a material from a solid phase by cathode sputtering; [Figure 7] FIG. 2 shows a schematic and simplified representation of a part of an embodiment of an apparatus according to the invention, comprising two or more cathode sputtering sources, for operating a variant of the method according to the invention. [Figure 8] FIG. 3 is a diagram of an embodiment of an apparatus according to the invention having multiple plasmas supplied by pulsed DC, in a representation similar to the operating scheme of FIG. 2. [Figure 9] 8 is a diagram, in a representation similar to FIG. 7, of part of an embodiment of a device according to the invention for operating a variant of the method according to the invention; [Figure 10] FIG. 1 is a schematic and simplified diagram of a sputtering source having a cylindrical target, applicable to an embodiment of an apparatus according to the invention for operating a variant of the method of the invention, and realized using one or more cathode sputtering sources. [Figure 11] 3 is a schematic and simplified view of a portion of an embodiment of an apparatus according to the invention for operating a variant of the inventive method using an inclined planar target; FIG. [Figure 12] 3 is a schematic and simplified view of a portion of an embodiment of an apparatus according to the invention for operating a variant of the inventive method using an inclined cylindrical target; FIG. [Figure 13] 3A and 3B are schematic and simplified representations of electrode geometries with enlarged electrode surfaces applicable to an embodiment of the device according to the invention for operating a variant of the method of the invention; [Figure 14] 3A and 3B are schematic and simplified representations of electrode geometries with enlarged electrode surfaces applicable to an embodiment of the device according to the invention for operating a variant of the method of the invention; [Figure 15] 2 shows a schematic and simplified view of part of an embodiment of an apparatus according to the invention, in which the substrate holder is part of a transfer mechanism; [Figure 16]2 is a schematic and simplified view of a portion of an embodiment of an apparatus according to the invention, in which a substrate is loaded onto and unloaded from a substrate holder by a robot; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0063] FIG. 1 shows a schematic and simplified principle of a vacuum coating chamber according to the invention for carrying out the method according to the invention.

[0064] Within the interior space 1 of the vacuum coating chamber 3, pumped by a vacuum pump 5, a substrate holder 7 is provided having an extended surface 7a which is freely exposed to the interior space 1 when no substrate 9 to be coated is applied. The extended surface 7a of the substrate holder 7 which is exposed to the interior space 1 can be metallic, or it can be the surface of a dielectric material layer on the metallic body 7b of the substrate holder 7, as long as no substrate 9 is present thereon, whereas the body 7b of the substrate holder 7 is metallic. In the latter case, such a layer presents a negligible electrical impedance at an Rf frequency, for example 13.56 MHz, generated by an Rf generator 13.

[0065] The first electrode comprises a substrate holder 7 and is therefore addressed as the substrate holder / first electrode 7. The first electrode surface comprises an extended surface 7a unless a substrate 9 is deposited on the substrate holder / first electrode 7. The metal body 7b of the substrate holder / first electrode 7 is operatively electrically RF connected or operatively electrically RF connectable to one tap 10a of an Rf generator 13.

[0066] The substrate holder 7 may be part of a transfer mechanism for the substrates or may be loaded / unloaded by a robot, the advantage being that the vacuum coating chamber 3 is operated at the same potential as the substrate holder 7. This avoids having electrical insulators in the transfer mechanism and minimizes the risk of parasitic plasma discharges.

[0067] An embodiment for handling the substrate 9 is shown in a schematic and simplified manner in Figures 15 and 16 and will be described later.

[0068] If a substrate 9, which is a dielectric material or is covered with a dielectric material or which becomes covered with a dielectric material layer by operation of the device according to the invention or is a conductive material, is deposited on the substrate holder / first electrode 7, then in operation of the device according to the invention the surface of the substrate 9 exposed to the interior space 1 becomes at least a part of the first electrode surface instead of part of the extended surface 7a of the substrate holder / first electrode 7. This is because the dielectric material layer or substrate represents a negligible impedance to the Rf signal applied by the Rf generator 13.

[0069] If, in addition to the extended surface 7a of the substrate holder / first electrode 7, there is a further metallic or dielectric thin film coated surface area freely exposed to the interior space 1 and also electrically operably Rf connectable or connected to one tap 10a of the Rf generator 13, Such regions are likewise part of the first electrode surface. For example, as shown diagrammatically in Figure 1, if the wall 3a of the vacuum coating chamber 3 as well as the tap 10a are at ground potential GND, then the region 7e of the wall 3a becomes part of the first electrode surface.

[0070] The contribution of such regions 7e to the first electrode surface can be significantly reduced by realizing such regions by grids or lamellae and performing pumping or supply of gas to the interior space 1 via such grid or lamella regions 7e.

[0071] The second electrode 11 is Rf connectable or electrically operably connected to a second tap 10b of the Rf generator 13. The second electrode 11 has a second electrode surface 11a exposed to the interior space 1, which is either metallic or a surface of a dielectric film on a metallic electrode body, as described in connection with the first electrode with the extended surface 7a.

[0072] An electrically operable Rf connection to the tap 10b of the second electrode is in one embodiment established via a matchbox 15 and is DC blocked, for example as shown diagrammatically by a capacitance C15 integrated in the matchbox 15. Also, a DC blocking capacitance C7 may be provided between the tap 10a and the substrate holder / first electrode 7.

[0073] Between the first electrode surface and the second electrode surface, Rf plasma, PL RF is generated.

[0074] The second electrode surface 11a is at least 1.5 times larger than the first electrode surface 11. Thus, the positively charged particles of the material to be deposited on the substrate 9 are directed toward the Rf plasma PL, as shown diagrammatically by the arrow ACC. RF The beam is directionally accelerated within the cavity towards the surface of the substrate 9 .

[0075] At least one material source 17 is provided which is configured to generate material particles of the material to be deposited on the substrate 9, which particles are electrically positively charged and dispersed within the interior space 1 of the vacuum coating chamber 3.

[0076] Such a material source 17 provides, on the one hand, a gaseous or solid material, the latter to be evaporated or cathodically sputtered, and, on the other hand, an ionizing plasma for reacting with and ionizing the gaseous material or for ionizing the evaporated or cathodically sputtered solid. The same plasma can be utilized for evaporating or cathodically sputtering a solid material and for ionizing the solid material.

[0077] Two basic tasks of the material source 17 are specified diagrammatically in FIG. 1: on the one hand, IPL for an ionized plasma and M for providing the material to be ionized.

[0078] As indicated by the dashed lines, two or more such material sources 17, 17a, ... may be provided, especially for different materials. Thereby, one and the same ionizing plasma IPL may be utilized to electrically positively charge the different materials Ma, Mb, ... (not shown in FIG. 1) of each material source 17a, 17b, ..., or different ionizing plasmas IPLa, IPLb, ... may be dedicated to the material sources 17a, 17b, ..., respectively. The different ionizing plasmas may differ only by different intensities.

[0079] As indicated by the dashed lines in Fig. 1, a source controller 19 may be provided. The source controller 19, as shown diagrammatically in Fig. 1 by the control connection CON17, Controlling the on / off timing of one or more material sources 17, 17a, 17b, ..., respectively; and / or Controlling the material delivery rate at one or more material sources 17, 17a, 17b, ..., respectively; and / or - controlling the intensity of each IPL in one or more material sources 17, 17a, 17b, ..., respectively; and / or As shown diagrammatically in FIG. RF plasma PL RF On / off timing and / or Rf plasma PL RF Control the strength of It can be configured as follows.

[0080] FIG. 2 illustrates the various materials M, Ma, Mb, ... delivered to the interior space 1 and their timing, their various velocities R, the various ionized plasmas and their intensities IPL, IPLa, IPLb, ... and their timing at the material sources 17, 17a, 17b, ..., and the controllability of the intensity and timing of the RF plasma, without reference to a particular application being implemented, but merely to illustrate the flexibility of control that may be utilized.

[0081] During example time span A, the material source 17 is controlled to deliver material M at a rate R1 and the IPL is switched on at an intensity I1, whereby the IPL can be switched on as shown prior to the delivery of M and switched off after disabling the delivery of M. RF During example time span B, material source 17a is controlled to deliver material Ma at a lower rate R2, and IPLa and Rf plasma PL RF During example time span C, material source 17b is controlled to deliver material Mb at a rate R3, and its ionized plasma IPLb is controlled at an intensity I3. During this time span C, the Rf plasma PL RF The acceleration of positively charged material particles by the force is nullified.

[0082] During the example time span D, the delivery of material Mc of the material source 17c is controlled at the respective speed (not marked in FIG. 2) and the IPLc is switched off, so that the delivered material is delivered by the Rf plasma PL controlled at the desired intensity. RF The electron beam is exposed only to electron microscopy, resulting in minimal or no ionization.

[0083] During example time span E, the delivery rate of material M of material source 17 is controlled to decrease while the delivery rate of material Ma of material source 17a is controlled to increase. Similarly, the intensity of the IPL of material source 17 is controlled to decrease while the intensity of the IPLa of material 17a is controlled to increase. Rf is controlled to increase.

[0084] During example time span F, as represented diagrammatically in FIG. 2 by “Deposition; Etch (Dep; Etch)”, neither material source is operational, and instead another coating or etching process is carried out within the interior space 1 of the vacuum coating chamber 3.

[0085] Thus, depending on the respective realized embodiment and intended application of the apparatus and method according to the invention, the delivery of material, and / or the intensity of the ionized plasma, and / or the intensity of the Rf plasma, and / or all timings can be very flexibly controlled by the source controller 19, as required.

[0086] Returning to FIG. 1, the substrate holder / first electrode 7 may be fixed or, particularly if configured to hold a circular, disk-shaped substrate, may be drivably rotatable about its central axis, as designated at A7 and by arrow ω7.

[0087] The second electrode 11 is provided along a large and predominant portion of the inner surface of the wall 3a of the vacuum coating chamber 3. The distance d between the inner surface of the wall 3a and the second electrode 11 is selected to be less than the effective dark space distance at the pressure in the interior space 1 for a given desired coating process. Thus, there is no possibility of Rf plasma burning in the space between the inner surface of the wall 3a and the second electrode 11.

[0088] The second electrode surface 11a is at least 1.5 times larger than the first electrode surface, so that the potential drop from the plasma potential to the potential of the first electrode surface, and thus to the surface 7a of the substrate holder / first electrode 7, is larger and significantly larger than the respective potential drop to the second electrode surface 11a.

[0089] This causes the electrically positively charged material particles of the material deposited on the substrate 9 and diffused into the interior space 1 to be accelerated directionally towards or relative to the surface of the substrate 9 present on the extended surface 7a of the substrate holder / first electrode 7, substantially perpendicular to surface 7a.

[0090] Such a vacuum layer deposition chamber 3 is particularly suitable for carrying out the deposition of material to be deposited on a substrate 9, for example having an aspect ratio higher than 3:1, also in vias, trenches and more generally in depressions in the surface of the substrate 9 to be coated.

[0091] Definition: Under the term "aspect ratio" is understood the ratio of the maximum depth of a recess to its minimum cross-sectional diameter.

[0092] Figure 3 shows, in a schematic and simplified manner, an embodiment of a vacuum layer deposition apparatus according to the invention for operating the method according to the invention, in which parts of the apparatus already described in relation to figure 1 are designated with the same reference numbers.

[0093] In the embodiment of Fig. 3, the material source 17 or material sources 17a, 17b, ... generally designated in Fig. 1, which generate positively charged particles of material to be deposited on the substrate 9, in particular on the substrate 9 having the recess 21 (see Fig. 1), comprises on the one hand a respective gas tank 17M, 17aM, ... containing a respective reactive gas that is controllably exhausted into the interior space 1 via a gas supply port 23. On the other hand, the material source 17, 17a, ... designated in Fig. 1 generally comprises a pair of electrodes 25 and 27 that are electrically operatively RF-connected or connectable to a power source 29, which generates, for example, a DC power source or a pulsed DC power source, in particular a HIPIMS power source.

[0094] In the embodiment according to the example of FIG. 3, the electrode 25 is realized as a ring electrode in a ring interval of the second electrode 11, and the electrode 27 is realized around the substrate holder / first electrode 7, substantially opposite the electrode 25, also by a ring electrode in a ring interval in the second electrode 11. The power source 29 acts as a low pass filter and can be protected from Rf by a protective filter 31, which is realized by an inductive impedance as shown diagrammatically, or includes an inductive impedance. Between the electrodes 25 and 27, an ionized plasma IPL is generated for the material sources 17, 17a, ..., which in this embodiment generally have respective material delivery gas tanks 17M, 17aM, ....

[0095] Optionally, the source controller 19 may control the intensity and / or timing of the IPL via control connection COM171, the timing and / or rate of material delivery via control connection CON172, and the control connection CON RF Through RF Plasma PL RF The intensity and timing of the stimulation may be controlled.

[0096] This embodiment is particularly suitable for PECVD processes, for example, when the substrate holder / first electrode 7 is equipped with a heater (not shown in FIG. 3), plasma IPL and PL can be performed according to the operation in the example time span in FIG. Rf can be disabled and only a thermal CVD process can be performed.

[0097] In order to avoid too great a reduction of the second surface 11a by the electrodes 25 and 27, the electrode 25 may be electrically connected to the second electrode 11, as shown diagrammatically by the dashed line at connection 33. This in practice usually results in both electrodes 11 and 25 being realised, as shown diagrammatically in Fig. 4. Obviously, according to the embodiment of Fig. 3, all parts of the second electrode 11 are electrically interconnected, as shown diagrammatically by the electrical connection 35.

[0098] In the embodiment of FIG. 3, one or more reactive gases are reacted and ionized in the IPL, and the resulting reacted, positively charged gaseous material particles are ionized in the Rf plasma PL. RF 7a and is directionally accelerated towards the extended surface 7a and thus towards the surface of a substrate deposited on surface 7a.

[0099] Instead of achieving IPL between two electrodes, such as electrodes 25 and 27 shown in Figure 3, another type of plasma can be used, for example a microwave plasma, supplied with DC, pulsed DC, and thereby possibly HIPIMS. This can be achieved, for example, by adjusting and utilizing the gas supply 23 to couple microwave power from a microwave generator into the interior space 1.

[0100] In the embodiment of FIG. 5, the same reference numbers apply to parts already described in connection with FIGS.

[0101] The difference between the embodiment according to Fig. 5 and the embodiment according to Fig. 3 is that according to the embodiment of Fig. 5 the material M delivered by the material source 17 to the interior space 1 is based on a solid, possibly also on a liquid, whereas the material M delivered to the interior space in the embodiment according to Fig. 3 is based on a gas. The material source 17 applied in the embodiment of Fig. 5 is on the one hand an electron beam evaporator 17M for the delivery of the material M. e 3 embodiment, and on the other hand a pair of electrodes 25, 27 and a power supply 29. The substrate holder 7 mounts the substrate at the top of the chamber, since the evaporation source is usually mounted at the bottom of the chamber to avoid spillage from the crucible. Here too the substrate holder / first electrode 7 can advantageously be operated at ground potential and can be part of or be provided by a transport mechanism which is also operated at ground potential. As a result, if desired, the overall control of the material source can be controlled by the CON 171 for the IPL on the one hand and the CON 17M for the speed of the delivered material M on the other hand, much like such control in the embodiment of FIG. 2. e Electron beam evaporator 17M e Except for a different material source 17 having a different structure, the apparatus according to the embodiment of FIG. 5 is substantially similar to the apparatus of FIG. 3 and does not require further explanation to those skilled in the art.

[0102] FIG. 6 shows, in a schematic and simplified manner, an embodiment in which a source of positively charged particles of the material to be deposited on the substrate 9 according to the material source 17 of FIG. 1 delivers the material M to the interior space 1 based on a solid material.

[0103] In FIG. 6 parts of the device already mentioned in connection with FIGS. 1 to 5 are designated with the same reference numbers.

[0104] Opposite the substrate holder / first electrode 7 is provided with a cathode sputtering source, in this embodiment a magnetron sputtering source 37 having a target 39 electrically insulated from the wall 3a of the vacuum coating chamber 3. Behind the target 39 magnetron magnets (not shown) are driven in movement along the back side 39b of the target 39, as shown diagrammatically in magnet section 41. They generate a moving pattern of magnetron magnetic field H which is swept along the sputtering surface 39s of the target 39, as is fully known to those skilled in the art of magnetron sputtering.

[0105] The cathode sputter source, realized as a magnetron sputter source 37, is supplied by a DC power supply or, as shown in FIG. 6, by a pulsed DC power supply 29s, in one embodiment a HIPIMS power supply 29s which generates at its negative output a high negative voltage pulse with respect to the potential at the positive output. Through a protective filter 31, for example realized by an inductance, the negative output of the pulsed DC power supply, realized in one embodiment as a HIPIMS power supply, is connected to the target 39. The protective filter 31 can be provided on the target 39, if necessary, to limit the current rise of the pulse of the pulsed DC power supply 29s, in one embodiment a HIPIMS power supply. The target 39 actually corresponds to the electrode 25 in the embodiment of FIGS. 3 and 5, and cooperates with the electrode 27 operatively connected to the positive output tap of the power supply 29s. The target is therefore referenced by 39 / 25.

[0106] To achieve sufficient IPL, a high DC power density can be applied to a small target, or pulsed DC power can be applied to a large target. The power density should be >1 W / mm2.

[0107] For example, a small planar magnetron target with a radius of 50 mm should be operated at 8 kW DC.

[0108] Alternatively, a large planar magnetron target, for example with a radius of 200 mm, should be operated with a pulsed DC of 130 kW in pulses, but with a 10% duty cycle, so that the average power is 13 kW.

[0109] Thus, the material source 17 of FIG. 1 is realized, on the one hand, by delivering material M to the interior space 1 by sputtering a target (39, 25), and, on the other hand, by generating an IPL of the material source 17 by means of a DC pulsed supply electrode, the target 39, 25, and the electrode 27.

[0110] Contrary to conventional sputtering sources, the counter electrode 27 to the target 39 / 25 is in one embodiment positioned far away from the target 39, 25 and not around the target, which improves the distribution of the plasma IPL and thus the distribution of the positively charged sputtered particles over the interior space 1, thereby avoiding excessive electron currents to the substrate holder / first electrode 7 and thus to the substrate 9.

[0111] In one embodiment, regardless of the type of electrical supply of the cathode sputtering source by the magnetron sputtering source 37 and regardless of the realization of the sweeping magnetron magnetic field H, the target 39 / 25 of an electrically conductive material, usually metallic, can be short-circuited to the second electrode 11 as shown diagrammatically by an electrical connection 33, substantially similar to the respective connection 33 in the embodiments of figures 3 and 5 and 4. Thereby again the second electrode surface 11a of the second electrode 11, i.e. the sputtering surface 39s of the target 39, 25, is increased.

[0112] If reactive cathode sputtering is to be performed, at least one gas supply line (not shown in FIG. 6) is provided to diffuse reactive gas from a gas tank containing the reactive gas into the interior space 1 .

[0113] In the embodiment according to FIG. 6, since the sputtering rate and the intensity of the IPL are interdependent, control of the timing and / or intensity of the IPL and the material delivery rate is performed in accordance with CON17. 1、2 Note that, if desired, a duty cycle, a respective pulse repetition period, and a respective pulse amplitude may be established for power supply 29s from a source controller (not shown in FIG. 6), as indicated by . If power supply 29s is implemented by a pulsed DC power supply, then the duty cycle, the respective pulse repetition period, and the respective pulse amplitude may be set, controlled, and possibly varied over time.

[0114] The provision of two or more material sources 17 as generally described in connection with Fig. 1 is illustrated with the help of Fig. 7, thereby illustrating a plurality of cathode sputtering sources, in particular a plurality of magnetron sputtering sources 37 according to Fig. 6, namely 37a, 37b, 37c, .... Fig. 7 thereby shows, for example, a schematic and simplified view of a part of the second electrode 11 according to the embodiment of Fig. 6, where the cathode sputtering sources 37a-37c each act as an electrode 25 and are therefore designated by the reference numeral (39 / 25). a ~(39 / 25) c The target 39 is designated by

[0115] In the embodiment of FIG. 7, the target (39, 25) x is electrically isolated from the second electrode 11, which in one embodiment is powered by independent power sources 29sa-29sc, which in one embodiment are realized by respective DC or pulsed DC power sources, the HIPIMS source by power source 29s of the embodiment of FIG. 6, x Alternatively or additionally (not shown), the DC or pulsed DC, possibly HIPIMS power source may be switched in a time multiplexed manner from one or more targets (39, 25) to one or more subsequent targets (39, 25), thereby adapting the output power delivered to the possibly momentarily activated targets by the source controller 19 (not shown in FIG. 7).

[0116] Each of the power sources 29sa, 29sb, ... may optionally be further connected to a common electrode 27, according to the embodiment of FIG. 6, and / or at least some of the power sources 29sa, 29sb, ... may optionally be connected to dedicated electrodes 27a, 27b, 27c, ....

[0117] If desired, the power supplies 29sa, 29sb, ... can again be controlled from the source controller 19 (see FIG. 1) via the control connections CON17a, CON17b, .... If the power supplies 29sa, 29sb, ... are realised by pulsed DC power supplies, the time span during which the respective power supplies are activated, the respective duty cycles, the respective pulse repetition periods, the respective pulse amplitudes can be set, controlled and possibly varied over time.

[0118] This flexibility of control is illustrated in FIG. 8 which shows possible voltage courses V applied by power sources 29sa, 29sb, . . . between the targets (39 / 25)a, (39 / 25)b, .

[0119] Furthermore, as also illustrated in FIG. RF The on / off timing and RF power delivered to the first and second electrodes between which is generated is controlled by the control connection CON RF It should be noted that the Rf power is normally on during each or at least most of the ionizing DC pulses of power supply 29s or power supplies 29sa, 29sb, . . .

[0120] Independent control of the power supplies 29sa, 29sb, ... of FIG. 7 can be used to mix different types of materials from targets (39 / 25)a, (39 / 25)b, .... Targets (39 / 25)a, (39 / 25)b, ... of equal material can be used alternatively or additionally to coat extended surface areas of the substrate. On / off activation timing and intensity of each target sputtering can be set to control the uniformity of the deposition.

[0121] Different ways of supplying electricity to the two targets of an embodiment of the device according to the invention are shown in a schematic and simplified manner in FIG. 9, in a representation similar to that of FIG. 7. The power supply 29+- interconnects the two targets (39 / 27)a and (27 / 39)b with alternating electrical polarity, as shown diagrammatically in FIG. 9 for a pulsed DC power supply. The pulse polarity is reversed after each pulse, or the pulse polarity is reversed after a pulse sequence of a controllable time range. A separate electrode 27, as provided in the embodiment of FIG. 5, is not provided. One of the targets 39a, 39b alternately becomes the electrode by the electrode 27, and the other target becomes the electrode 25, as diagrammatically designated in FIG. 9 by the reference numbers (39 / 27)a and (27 / 39)b.

[0122] Again, if desired, the timing of polarity reversals and / or pulse characteristics, i.e. pulse amplitude, pulse length, duty cycle, may be controlled by source controller 19 via control connection CON17.

[0123] As discussed in relation to the general embodiment of Figure 1, in all previously illustrated embodiments the substrate holder / first electrode 7 may be rotated about a central axis A7 of the substrate holder / first electrode 7 (see Figure 1) relative to the one or more material sources 17. In one embodiment, the one or more material sources 17 are stationary and the substrate holder / first electrode 7 is rotated.

[0124] Bearing in mind the embodiment in which the material source 17 or the material sources 17, 17a, 17b, ... comprise one or more magnetron sputtering sources, the respective targets are represented extending along a plane E39 (see, for example, FIG. 6) and are so-called planar targets.

[0125] All single and multiple magnetron sputter sources in all embodiments described so far, shown throughout the figures as planar magnetron sputter sources having targets 39 each extending along a plane E39 as shown in FIG. 6, may each be replaced by a magnetron sputter source having a cylindrical target. FIG. 10 shows a planar magnetron sputter source having a cylindrical target 39. cyl Such a cylindrical target magnetron sputtering source 37 having cyl 1 shows a schematic and simplified view of

[0126] Cylindrical Magnetron Sputter Source 37 cyl is the central axis A cyl Can be driven to rotate around (ω 39 ) Cylindrical target 39 cyl Cylindrical target 39 cyl Inside the hollow space 45 is a magnet section 41 having a magnetron magnet (not shown) that generates a magnetron magnetic field H. cyl A magnet section 41 having a magnetron magnet is provided. cyl can be at rest as shown diagrammatically in ST, or it can be moved along the axis A as designated by Ω. cyl In some cases, the vibration is driven around the

[0127] As described, such a cylindrical magnetron sputtering source 37 may replace one or all of the planar magnetrons as in Figures 6, 7, and 9. Cylindrical target 39 cyl can be operated at the same potential as the second electrode 11, thereby enlarging the second electrode surface 11a. The cylindrical magnetron sputtering source can be controlled as described for the planar magnetron source.

[0128] As shown in the embodiment of FIGS. 6 and 7 and exemplified thus far, the central normal N39 of the planar target perpendicular to the plane E39 extends parallel to the central axis A7 of the substrate holder / first electrode 7.

[0129] In the embodiment of the cathode sputtering source according to FIG. 10, such a central normal N39 cyl is axis A cyl In a plane incorporating the cyl In this case, the central axis N39 in one embodiment can be defined as the center of the length range. cyl extends parallel to the axis A7.

[0130] 11 and 12 show, in a representation similar to that of FIGS. 7 and 9, in a schematic and simplified manner, an embodiment of the device according to the invention and an embodiment for operating the method according to the invention, with one or more targets 39, 39 cyl Normal N39, N39 cyl teeth, 2°≦α≦30° intersects with axis A7 by an effective angle α.

[0131] Thereby, one target 39 or 39 tilted as described cyl may be provided, or more than one target may be provided. cyl The intersection point P of the two electrodes may be on or near the surface of the substrate present on the substrate holder / first electrode 7.

[0132] The second electrode surface 11a can be further enlarged by shaping each of the second electrodes 11, as illustrated in Figures 13 and 14. This shaping can be performed by fins or plates rigidly connected to the second electrodes 11, provided that they are able to distribute the plasma in the resulting cavity.

[0133] Departing from the general description of the device and method according to the invention in Fig. 1, Fig. 15 shows a part of an embodiment comprising a conveyor 45. The conveyor is aligned in a plane E7 parallel to the plane E7 in which the extended surface 7a of the substrate holder / first electrode 7 extends. C 4. The conveyor 45 carries two or more substrates 9 and is driven by the drive 47 to transport them unidirectionally to a position aligned with the substrate holders 7. The substrate holders 7, initially in a position below the conveyor 45, are controllably driven by the drive 49 upwards through handling openings 51 in the conveyor 45 to lift the respective substrates 9 upwards to a coating position, as shown at CP in dashed lines. If necessary, by lifting the substrate holders 7 in the coating position, as shown at CP in dashed lines with a seal 53, the interior space 1 can become sealed against the transfer section 55 in which the conveyor is located.

[0134] According to the embodiment of Figure 16, the substrate holder / first electrode 7 is stationary and the substrate 9 is loaded onto and unloaded from the substrate holder / first electrode 7 by a controllably driven robot 57.

[0135] It should be noted that also in the embodiment according to Figures 15 and 16 the substrate holder / first electrode 7 is operated at ground potential GND.

[0136] It is entirely clear to a person skilled in the art that if substrate handling is performed between compartments operated at different pressures and via an ambient / vacuum interface, unidirectional or bidirectional load locks must be provided. [Explanation of symbols]

[0137] 1. Interior space 3 Vacuum coating chamber, vacuum layer deposition chamber 3a wall 5. Vacuum Pump 7 Substrate holder, substrate holder / first electrode 7a Extended Surface, Surface 7b body, metal body 7e region, grid or lamella region 9 Substrate 10a Tap 10b Second Tap 11 second electrode, electrode 11a second electrode surface 13 RF Generator 15. Matchbox 17 Material sources 17a Material source 17aM Gas Tank, Material Delivery Gas Tank 17b Material source 17c Material source 17M Gas Tank, Material Delivery Gas Tank 17M e Electron Beam Evaporator 19 Source Controller 21 Hollow 23 Gas supply port 25 Electrodes, Targets 27 Electrode, common electrode, counter electrode 27a Dedicated electrode 27b Dedicated electrode 27c Dedicated electrode 29 Source 29s Pulse DC power supply, HIPIMS power supply 29sa~29sc power supply 29+- Power supply 31 Protective Filter 33 Connections, electrical connections 37 Magnetron sputtering source, magnetron sputtering source 37a Magnetron sputtering source 37b Magnetron sputtering source 37c Magnetron Sputtering Source 37 cyl Cylindrical target magnetron sputtering source, Cylindrical magnetron sputtering source 39 Target 39b Back side 39 cyl target 39s Sputtering Surface 41 Magnet Section 41 cyl Magnet Section 45 Hollow spaces, conveyors 47 Drive unit 49 Drive unit 53 Seal 55 Transport Section 57 Controllably Driven Robots

Claims

1. 1. A vacuum layer deposition apparatus comprising: a vacuum coating chamber having an interior space; a material source configured to generate electrically positively charged particles of a material to be deposited on a substrate within said interior space; a substrate holder having an extended metal or dielectric material surface exposed to said interior space; An RF plasma source, a first electrode electrically operably Rf connectable or electrically operably Rf connected to a first tap of an Rf generator; a second electrode electrically operably Rf connectable or electrically operably Rf connected to a second tap of said Rf generator; an RF plasma source comprising: Equipped with the first electrode comprises a first electrode surface of a metal or dielectric material, the first electrode surface being a portion of the entire surface of the first electrode that is freely exposed to the interior space; the second electrode comprises a second electrode surface made of a metal or a dielectric material, the second electrode surface being a portion of the entire surface of the second electrode that is freely exposed to the interior space; the extended surface of the substrate holder is at least a portion of the first electrode surface; the second electrode surface is at least 1.5 times larger than the first electrode surface; Vacuum layer deposition equipment.

2. 10. The vacuum layer deposition apparatus of claim 1, wherein the substrate holder and the vacuum coating chamber are connected to ground potential.

3. at least a portion of the second electrode extends opposite the substrate holder and faces the substrate holder; and / or 3. The vacuum layer deposition apparatus of claim 1 or 2, comprising a source controller operably connected to control the input of the Rf generator and configured to control at least one of the on / off timing of the Rf generator and the output power of the Rf generator.

4. 3. The vacuum layer deposition apparatus of claim 1 or 2, wherein the material source configured to generate the electrically positively charged particles comprises a source of material and a further plasma source configured to ionize material delivered from the source of material.

5. 5. A vacuum layer deposition apparatus according to claim 4, wherein the further plasma source comprises a third electrode and a fourth electrode each electrically operably connected or each electrically connectable to a tap of a further generator, the third electrode and the fourth electrode being exposed to the interior space.

6. one of the third electrode and the fourth electrode is common to the second electrode; and / or 6. The vacuum layer deposition apparatus of claim 5, wherein one of the third electrode and the fourth electrode is electrically insulated from the substrate holder and disposed around the substrate holder.

7. 6. The vacuum layer deposition apparatus of claim 5, wherein said further generator is a DC generator or a pulsed DC generator.

8. 8. A vacuum layer deposition apparatus according to claim 7, wherein said further generator is a HIPIMS generator.

9. 3. The vacuum layer deposition apparatus of claim 1 or 2, wherein the material source configured to generate the electrically positively charged particles comprises at least one source delivering material from a solid or a liquid.

10. 10. Vacuum layer deposition apparatus according to claim 9, wherein said at least one source delivering a solid material is a cathode sputter source, the target of said cathode sputter source being one electrode of a further plasma source.

11. 11. The vacuum layer deposition apparatus of claim 10, wherein said cathode sputtering source is a magnetron sputtering source.

12. 3. The vacuum layer deposition apparatus of claim 1, wherein the material source configured to generate the electrically positively charged particles comprises a source of material and a further plasma source configured to ionize material delivered from the source of material and operably connected to an electrical supply source, and further comprising a source controller operably connected to a control input of the electrical supply source and configured to control at least one of an on / off timing of the electrical supply source and an output power of the electrical supply source.

13. 13. The vacuum layer deposition apparatus of claim 12, comprising two or more of said material sources, wherein said source controller is operably connected to said two or more material sources and configured to control the on / off timing of said two or more material sources relative to one another.

14. 1. A method for vacuum process depositing a layer on a substrate, in particular on a substrate containing depressions in the surface to be coated, or a method for producing such a substrate coated with a vacuum process deposited layer, comprising the steps of: - providing a substrate on a first electrode surface in an evacuated vacuum chamber; - generating, in said vacuum chamber, electrically positively charged particles of the material to be deposited on said substrate; directionally accelerating the positively charged particles towards the surface of the substrate by generating an RF plasma between the first and second electrode surfaces, the second electrode surface being at least 1.5 times larger than the first electrode surface; A method comprising:

15. Intermittently enabling and disabling the discharge of the Rf plasma during the deposition process; and / or 15. The method of claim 14, including generating positively charged particles of different materials at staggered times during the deposition process.

16. 16. The method of claim 14 or 15, wherein generating the positively charged particles comprises generating a further plasma within the vacuum vessel.

17. 16. A method according to claim 14 or 15, wherein the step of generating positively charged particles comprises cathodic sputtering of a solid or liquid target, in particular magnetron sputtering of at least one of said targets.

18. 18. The method of claim 17, wherein the step of cathodic sputtering includes providing a counter electrode relative to the target, the counter electrode looping around the substrate.

19. 18. The method of claim 17, comprising operating at least one of the targets at the potential of the second electrode.

20. 16. The method according to claim 14 or 15, wherein the step of generating positively charged particles comprises magnetron sputtering and electrically supplying the magnetron sputtering by DC or pulsed DC, in particular HIPIMS.

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