Light-emitting device including quantum dots and electronic device including said light-emitting device

Abstract

Provided is a light-emitting element including a first electrode, a second electrode opposite the first electrode, and an intermediate layer including a light-emitting layer disposed between the first electrode and the second electrode, the light-emitting layer including first quantum dots and second quantum dots, the energy band gap of the first quantum dots being larger than the energy band gap of the second quantum dots, the first quantum dots emitting light in a partial wavelength region of the visible light region, and an electronic device including the light-emitting element.

Description

[Technical field]

[0001] The present invention relates to a light-emitting device including a quantum dot, and to an electronic device including said light-emitting device. [Background technology]

[0002] Quantum dots can be used as materials performing various optical functions (e.g., light conversion function, light emission function, etc.) in optical components and various electronic devices. The quantum dots are nano-sized semiconductor nanocrystals that exhibit the quantum confinement effect, and can have different energy band gaps by controlling the size and composition of the nanocrystals, thereby emitting light of various emission wavelengths.

[0003] The optical member including the quantum dots may have a thin film form, for example, a thin film form patterned for each subpixel, and may be used as a color conversion member of a device including various light sources.

[0004] The quantum dots can be used for various purposes in various electronic devices. For example, the quantum dots can be used as emitters. For example, the quantum dots can be included in a light emitting layer in a light emitting device including a pair of electrodes and a light emitting layer to serve as an emitter.

[0005] Currently, in order to realize high-quality optical components and electronic devices, there is a demand for quantum dots that emit blue light with a maximum emission wavelength of 490 nm or less, have excellent photoluminescence quantum yield (PLQY), and do not contain the toxic element cadmium. Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a light emitting device including quantum dots with improved light emitting efficiency, and an electronic device including the light emitting device. [Means for solving the problem]

[0007] According to one aspect, A first electrode; a second electrode facing the first electrode; an intermediate layer including a light-emitting layer disposed between the first electrode and the second electrode; The light-emitting layer includes first quantum dots and second quantum dots, The energy band gap of the first quantum dot is larger than the energy band gap of the second quantum dot; The first quantum dots are provided as a light emitting device that emits light in a partial wavelength range of the visible light range.

[0008] According to another aspect, there is provided an electronic device including the light-emitting element. Effect of the Invention

[0009] The light emitting device according to the present invention includes a light emitting layer including two or more types of quantum dots having different energy band gaps, and thus the charge injection characteristics in the light emitting layer can be improved, thereby improving the light emitting efficiency. [Brief description of the drawings]

[0010] [Figure 1] 1 is a diagram illustrating a schematic structure of a light emitting device according to an embodiment; [Diagram 2] 1 is a diagram illustrating a schematic structure of an electronic device according to an embodiment; [Diagram 3] 13 is a diagram illustrating a schematic structure of an electronic device according to another embodiment; [Figure 4] 1 is a graph showing luminous efficiency as a function of luminance of light-emitting elements according to Example 1, Comparative Example 1, and Comparative Example 2. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] The present invention can be modified in various ways and can have various embodiments, but specific embodiments are illustrated in the drawings and will be described in detail by the detailed description. The advantages, features, and methods of achieving the present invention will become clear by referring to the embodiments described in detail below in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below, but can be embodied in various forms.

[0012] In this specification, terms such as first and second are not used in a limiting sense but are used only to distinguish one component from another component.

[0013] In this specification, the singular expression includes the plural expression unless the context clearly indicates otherwise.

[0014] In this specification, the term "comprise" or "have" means that the features or components described in the specification are present, and does not preclude the possibility that one or more other features or components may be added. For example, unless otherwise specified, the term "comprise" or "have" can mean either a case in which the feature or component described in the specification is comprised of only the features or components described in the specification, or a case in which other components are further included.

[0015] As used herein, "Group II" includes Group IIA and Group IIB elements on the IUPAC Periodic Table, and Group II elements can include, for example, magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), mercury (Hg), and the like.

[0016] As used herein, "Group III" includes Group IIIA and Group IIIB elements on the IUPAC Periodic Table, and Group III elements can include, for example, aluminum (Al), gallium (Ga), indium (In), thallium (Tl), and the like.

[0017] As used herein, "Group V" includes Group VA and Group VB elements on the IUPAC Periodic Table, and Group V elements can include, for example, nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and the like.

[0018] As used herein, "Group VI" includes Group VIA and Group VIB elements on the IUPAC Periodic Table, and Group VI elements can include, for example, sulfur (S), selenium (Se), tellurium (Te), and the like.

[0019] In this specification, the "energy band gap" of a quantum dot refers to the gap between the conduction band minimum (CBM) energy level and the valence band maximum (VBM) energy level of the quantum dot. The VBM energy level can be measured by ambient photoelectron spectroscopy (APS) measurement, and the energy band gap can be measured by ultraviolet-visible (UV-Vis) measurement. The CBM energy level can be calculated from the measured energy band gap and VBM energy level. The measurement can be performed after forming a film by spin coating (2,500 rpm, 30 seconds) a solution with a concentration of 50 mg / ml on a Au substrate under a nitrogen flow.

[0020] According to one embodiment, the light emitting device includes a first electrode, a second electrode facing the first electrode, and an intermediate layer including an emission layer disposed between the first electrode and the second electrode, the emission layer includes first quantum dots and second quantum dots, the energy band gap of the first quantum dots is larger than the energy band gap of the second quantum dots, and the first quantum dots emit light in a partial wavelength region of the visible light region.

[0021] Hereinafter, a structure and a method for manufacturing a light emitting device 10 according to an embodiment of the present invention will be described with reference to FIG.

[0022] 1 is a schematic cross-sectional view of a light emitting device 10 according to an embodiment of the present invention. The light emitting device 10 includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0023] [First electrode 110] A substrate may be further disposed under the first electrode 110 or over the second electrode 150 in FIG. 1. The substrate may be a glass substrate or a plastic substrate. Alternatively, the substrate may be a flexible substrate, and may include a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0024] The first electrode 110 may be formed by providing a first electrode material on the substrate using, for example, a deposition method or a sputtering method. When the first electrode 110 is an anode, a high work function material that easily injects holes may be used as the first electrode material.

[0025] The first electrode 110 may be a reflective electrode, a semi-transparent electrode, or a transparent electrode. To form the first electrode 110 as a transparent electrode, the first electrode material may be indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2), zinc oxide (ZnO), or any combination thereof. Alternatively, to form the first electrode 110, which is a semi-transmissive electrode or a reflective electrode, the first electrode material may be magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0026] The first electrode 110 may have a single-layer structure consisting of a single layer or a multi-layer structure including a plurality of layers, for example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0027] [Middle layer 130] The intermediate layer 130 is disposed on the first electrode 110. The intermediate layer 130 includes a light emitting layer.

[0028] The intermediate layer 130 may further include a hole transport region disposed between the first electrode 110 and the light emitting layer, and an electron transport region disposed between the light emitting layer and the second electrode 150.

[0029] The intermediate layer 130 may further include a metal-containing compound such as an organometallic compound, an inorganic material such as quantum dots, and the like, in addition to various organic materials.

[0030] In addition, the intermediate layer 130 may include i) two or more emitting units sequentially stacked between the first electrode 110 and the second electrode 150, and ii) a charge generation layer disposed between the two emitting units. When the intermediate layer 130 includes the above-mentioned emitting units and charge generation layer, the light emitting device 10 may be a tandem light emitting device.

[0031] [Hole transport region in intermediate layer 130] The hole transport region may have i) a single layer structure consisting of a single layer made of a single material, ii) a single layer structure consisting of a single layer containing a plurality of different materials, or iii) a multilayer structure including a plurality of layers containing a plurality of different materials.

[0032] The hole transport region can include a hole injection layer, a hole transport layer, a light-emitting assisting layer, an electron blocking layer, or any combination thereof.

[0033] For example, the hole transport region may have a multilayer (laminate) structure of a hole injection layer / hole transport layer, a hole injection layer / hole transport layer / light emitting auxiliary layer, a hole injection layer / light emitting auxiliary layer, a hole transport layer / light emitting auxiliary layer, or a hole injection layer / hole transport layer / electron blocking layer, which are stacked in this order from the first electrode 110.

[0034] The hole transport region can include a compound represented by formula 201, a compound represented by formula 202, or any combination thereof:

[0035] <Chemical formula 201> JPEG2025505370000002.jpg57155

[0036] <Chemical formula 202> JPEG2025505370000003.jpg45144

[0037] In the above chemical formulas 201 and 202, L 201 Or L 204 are, independently of each other, at least one R 10a with or without substitution of C 3 -C 60 A carbocyclic group or at least one R 10a with or without substitution of C 1 -C 60 is a heterocyclic group,

[0038] L205 *-O-*', *-S-*', *-N(Q 201 )-*', at least one R 10a with or without substitution of C 1 -C 20 an alkylene group, at least one R 10a with or without substitution of C 2 -C 20 alkenylene group, at least one R 10a with or without substitution of C 3 -C 60 A carbocyclic group or at least one R 10a with or without substitution of C 1 -C 60 is a heterocyclic group,

[0039] xa1 to xa4 are each independently an integer from 0 to 5;

[0040] xa5 is an integer from 1 to 10;

[0041] R 201 Or R 204 , and Q201 are each independently selected from at least one R 10a with or without substitution of C 3 -C 60 A carbocyclic group or at least one R 10a with or without substitution of C 1 -C 60 is a heterocyclic group,

[0042] R 201 and R 202 optionally a single bond, at least one R 10a with or without substitution of C 1 -C 5 an alkylene group or at least one R 10a with or without substitution of C 2 -C 5 are connected to each other via an alkenylene group, and at least one R 10a with or without substitution of C8 -C 60 Polycyclic groups (such as carbazole groups) can be formed (see, for example, compound HT16 below),

[0043] R 203 and R 204 may optionally be a single bond, at least one R 10a with or without substitution of C 1 -C 5 an alkylene group or at least one R 10a Substituted or unsubstituted C 2 -C 5 At least one R 10a with or without substitution of C 8 -C 60 Polycyclic groups can be formed,

[0044] na1 can be one of the integers from 1 to 4.

[0045] For example, each of the formulas 201 and 202 may include at least one of the groups represented by the following formulas CY201 to CY217:

[0046] JPEG2025505370000004.jpg92144

[0047] In the formula CY201 to the formula CY217, R 10b and R 10c The explanations regarding R 10a Please refer to the explanation of the CY 201 Or CY 204 are independent of each other, C 3 -C 20 Carbocyclic group or C 1 -C 20 A heterocyclic group represented by the formula CY 201 or the formula CY 217 At least one hydrogen of 10aIt may be substituted or unsubstituted with

[0048] According to an embodiment, in the formula CY201 to the formula CY217, the ring CY 201 Or CY 204 may each independently be a benzene group, a naphthalene group, a phenanthrene group or an anthracene group.

[0049] According to another embodiment, each of formulas 201 and 202 may include at least one of the groups represented by formulas CY201 to CY203.

[0050] According to yet another embodiment, the chemical formula 201 may include at least one of the groups represented by the chemical formulas CY201 to CY203, and at least one of the groups represented by the chemical formulas CY204 to CY217.

[0051] According to yet another embodiment, in Formula 201, xa1 is 1, and R 201 is a group represented by one of the formulas CY201 to CY203, xa2 is 0, R 202 may be a group represented by one of Formulas CY204 to CY207.

[0052] According to still other embodiments, each of formulas 201 and 202 may not include groups represented by formulas CY201 to CY203.

[0053] According to yet another embodiment, each of the chemical formulas 201 and 202 may not include a group represented by the chemical formulas CY201 to CY203, but may include at least one of the groups represented by the chemical formulas CY204 to CY217.

[0054] As yet another example, each of formulas 201 and 202 may not include the groups represented by formulas CY201 to CY217.

[0055] For example, the hole transport region may be one of the following compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, Spiro-TPD ([N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-2,7-diamino-9,9-spirobifluorene]), Spiro-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-2,7-diamino-9,9-spirobifluorene), methylated NPB, TAPC, or HMTPD. , 4',4"-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate (PANI / PSS), or any combination thereof:

[0056] JPEG2025505370000005.jpg87144

[0057] JPEG2025505370000006.jpg86144

[0058] JPEG2025505370000007.jpg85144

[0059] JPEG2025505370000008.jpg92144

[0060] JPEG2025505370000009.jpg84144

[0061] JPEG2025505370000010.jpg83144

[0062] JPEG2025505370000011.jpg40144

[0063] JPEG2025505370000012.jpg102144

[0064] JPEG2025505370000013.jpg62129

[0065] JPEG2025505370000014.jpg99144

[0066] The thickness of the hole transport region may be about 50 Å to about 10,000 Å, for example, about 100 Å to about 4,000 Å. When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may be about 100 Å to about 9,000 Å, for example, about 100 Å to about 1,000 Å, and the thickness of the hole transport layer may be about 50 Å to about 2,000 Å, for example, about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, hole injection layer, and hole transport layer satisfy the above-mentioned ranges, satisfactory hole transport properties can be obtained without a substantial increase in driving voltage.

[0067] The light emitting auxiliary layer is a layer that compensates for an optical resonance distance according to the wavelength of light emitted from the light emitting layer to increase light emission efficiency, and the electron blocking layer is a layer that prevents electron leakage from the light emitting layer to the hole transport region. The materials that can be contained in the hole transport region can be contained in the light emitting auxiliary layer and the electron blocking layer.

[0068] [p-dopant] The hole transport region may include a charge generating material to enhance conductivity in addition to the materials described above. The charge generating material may be uniformly or non-uniformly dispersed within the hole transport region (e.g., in the form of a single layer of the charge generating material).

[0069] The charge generating material can be, for example, a p-dopant.

[0070] For example, the lowest unoccupied molecular orbital (LUMO) energy level of the p-dopant may be −3.5 eV or lower.

[0071] According to an embodiment, the p-dopant may include a quinone derivative, a cyano group-containing compound, an element EL1-containing compound and an element EL2-containing compound, or any combination thereof.

[0072] Examples of the quinone derivatives may include TCNQ, F4-TCNQ, and the like.

[0073] Examples of the cyano group-containing compound include HAT-CN, a compound represented by the following formula 221, and the like.

[0074] JPEG2025505370000015.jpg45144

[0075] <Chemical formula 221> JPEG2025505370000016.jpg85111

[0076] In the above formula 221, R 221 Or R 223 are, independently of each other, at least one R 10a with or without substitution of C 3 -C 60 A carbocyclic group or at least one R 10a with or without substitution of C 1 -C 60 is a heterocyclic group,

[0077] R 221 Or the above R 223 At least one of the groups, independently of each other, is selected from the group consisting of a cyano group; -F; -Cl; -Br; -I; a C substituted with a cyano group, -F, -Cl, -Br, -I, or any combination thereof.1 -C 20 or any combination thereof, 3 -C 60 Carbocyclic group or C 1 -C 60 It may be a heterocyclic group.

[0078] In the element EL1-containing and element EL2-containing compounds, the element EL1 can be a metal, a metalloid, or a combination thereof, and the element EL2 can be a nonmetal, a metalloid, or a combination thereof.

[0079] Examples of the metal include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), and the like. ), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.; post-transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); and the like.

[0080] Examples of the metalloids may include silicon (Si), antimony (Sb), tellurium (Te), and the like.

[0081] Examples of said non-metals may include oxygen (O), halogens (eg, F, Cl, Br, I, etc.), and the like.

[0082] For example, the element EL1-containing and element EL2-containing compounds can include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides, metalloid iodides, etc.), metal tellurides, or any combination thereof.

[0083] Examples of the metal oxide include tungsten oxide (e.g., WO, W 2 O 3 , WO 2 , WO 3 , W 2 O 5 ), vanadium oxides (e.g., VO, V 2 O 3 , V.O. 2 , V 2 O 5 etc.), molybdenum oxide (MoO, Mo 2 O 3 , MoO 2 , MoO 3 , Mo 2 O 5 ), rhenium oxides (e.g., ReO 3 etc.)

[0084] Examples of the metal halides may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, and the like.

[0085] Examples of the alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, and the like.

[0086] An example of the alkaline earth metal halide is BeF2 , MgF 2 , CaF 2 , SrF 2 , BaF 2 , BeCl 2 , MgCl 2 , CaCl 2 , SrCl 2 , BaCl 2 , BeBr 2 , MgBr 2 , CaBr 2 , SrBr 2 , BaBr 2 , BeI 2 , MgI 2 , CaI 2 , SrI 2 ,BaI 2 It may include the following.

[0087] Examples of the transition metal halide include titanium halides (e.g., TiF 4 , TiCl 4 , TiBr 4 , TiI 4 etc.), zirconium halides (e.g., ZrF 4 , ZrCl 4 , ZrBr 4 , ZrI 4 etc.), hafnium halides (e.g., HfF 4 , HfCl 4 , HfBr 4 , HfI 4 ), vanadium halides (e.g., VF 3 , VCl 3 , VBr 3 , V.I. 3 etc.), niobium halides (e.g., NbF 3 , NbCl 3 , NbBr 3 , NbI 3 etc.), tantalum halides (e.g., TaF 3 , TaCl 3 , TaBr 3 ,TaI 3 etc.), chromium halides (e.g., CrF 3 , CrCl 3 , CrBr3 , CrI 3 etc.), molybdenum halides (e.g., MoF 3 , MoCl 3 , MoBr 3 , MoI 3 ), tungsten halides (e.g., WF 3 , WCl 3 , W.B.R. 3 , W.I. 3 etc.), manganese halides (e.g., MnF 2 , MnCl 2 , MnBr 2 , MnI 2 ), technetium halides (e.g., TcF 2 , TcCl 2 , TcBr 2 , TcI 2 etc.), rhenium halides (e.g., ReF 2 , ReCl 2 , ReBr 2 , ReI 2 etc.), iron halides (e.g., FeF 2 , FeCl 2 , FeBr 2 , FeI 2 etc.), ruthenium halides (e.g., RuF 2 , RuCl 2 , RuBr 2 , RuI 2 ), osmium halides (e.g., OsF 2 , OsCl 2 , OsBr 2 , OsI 2 etc.), cobalt halides (e.g., CoF 2 , CoCl 2 , CoBr 2 , CoI 2 etc.), rhodium halides (e.g., RhF 2 , RhCl 2 , RhBr 2 , RhI 2 etc.), iridium halides (e.g., IrF 2 , IrCl 2 , IrBr 2 , IrI 2etc.), nickel halides (e.g., NiF 2 , NiCl 2 , NiBr 2 , NiI 2 etc.), palladium halides (e.g., PdF 2 , PdCl 2 , PdBr 2 , PdI 2 etc.), platinum halides (e.g., PtF 2 , PtCl 2 , PtBr 2 , PtI 2 etc.), copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), and the like.

[0088] Examples of the post-transition metal halide include zinc halides (e.g., ZnF 2 , ZnCl 2 , ZnBr 2 , ZnI 2 etc.), indium halides (e.g., InI 3 etc.), tin halides (e.g., SnI 2 etc.), etc.

[0089] Examples of the lanthanide metal halides are YbF, YbF 2 , YbF 3 , SmF 3 , YbCl, YbCl 2 , YbCl 3 SmCl 3 , YbBr, YbBr 2 , YbBr 3 SmBr 3 , YbI, YbI 2 , YbI 3 , SmI 3 It may include the following.

[0090] Examples of the metalloid halides may include antimony halides (e.g., SbCl5, etc.).

[0091] Examples of the metal tellurides include alkali metal tellurides (e.g., Li 2 Te, Na 2 Te, K 2 Te, Rb 2 Te, Cs 2 Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe 2 , ZrTe 2 , HfTe 2 , V 2 Te3, Nb 2 Te 3 , Ta 2 Te 3 , Cr 2 Te 3 , Mo 2 Te 3 , W 2 Te 3 , MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu 2 Te, CuTe, Ag 2 Te, AgTe, Au 2 Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), and the like.

[0092] [Light-emitting layer in intermediate layer 130] The light-emitting layer may include quantum dots.

[0093] As used herein, quantum dots refer to crystals of semiconductor compounds and may include any material that can emit light of various emission wavelengths depending on the crystal size.

[0094] The quantum dots may have a diameter of, for example, about 1 nm to 10 nm.

[0095] The quantum dots may be synthesized by wet chemical processes, metalorganic chemical vapor deposition processes, molecular beam epitaxy (MBE) processes, or similar processes.

[0096] The wet chemical process is a method of growing quantum dot particle crystals after mixing an organic solvent with a precursor material. When the crystals grow, the organic solvent naturally acts as a dispersant coordinated to the surface of the quantum dot crystals, and the growth of the quantum dot particles can be controlled through a process that is easier and less expensive than gas phase deposition methods such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) to control the growth of the crystals.

[0097] The quantum dots may comprise a II-VI semiconductor compound; a III-V semiconductor compound; a III-VI semiconductor compound; a I-III-VI semiconductor compound; a IV-VI semiconductor compound; a Group IV element or compound thereof; or any combination thereof.

[0098] Examples of the II-VI semiconductor compounds may include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe; or any combination thereof.

[0099] Examples of the III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and InPSb; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; or any combination thereof. The III-V semiconductor compounds may further include a group II element. Examples of III-V semiconductor compounds further including the Group II element may include InZnP, InGaZnP, InAlZnP, and the like.

[0100] Examples of the III-VI group semiconductor compounds are GaS, GaSe, Ga 2 Se 3 , GaTe, InS, InSe, In 2 S 3 , In 2 Se 3 , InTe; InGaS 3 , InGaSe 3 or any combination thereof.

[0101] Examples of the I-III-VI group semiconductor compounds include AgInS, AgInS 2 , CuInS, CuInS 2 ,CuGaO 2 , AgGaO 2 , AgAlO 2 or any combination thereof.

[0102] Examples of the IV-VI semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe; or any combination thereof.

[0103] The Group IV elements or compounds thereof may include single element compounds such as Si, Ge; binary compounds such as SiC, SiGe; or any combination thereof.

[0104] Each element contained in the multi-element compounds, such as the binary, ternary and quaternary compounds described above, may be present in the particles in a uniform or non-uniform concentration.

[0105] The quantum dots may have a single structure in which the concentration of each element contained in the quantum dot is uniform, or a core-shell double structure, in which, for example, the material contained in the core and the material contained in the shell may be different from each other.

[0106] The shell of the quantum dot may act as a protective layer to prevent chemical denaturation of the core and maintain the semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the elements present in the shell decreases toward the center.

[0107] Examples of the shell of the quantum dots include oxides of metals, semimetals or nonmetals, semiconductor compounds, or combinations thereof. Examples of the oxides of metals, semimetals or nonmetals include SiO 2 , Al 2 O 3 , TiO 2 , ZnO, MnO, Mn2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 Binary compounds such as NiO; MgAl 2 O 4 , CoFe 2 O 4 , NiFe 2 O 4 , CoMn 2 O 4 Examples of the semiconductor compounds may include II-VI semiconductor compounds, III-V semiconductor compounds, III-VI semiconductor compounds, I-III-VI semiconductor compounds, IV-VI semiconductor compounds, or any combination thereof, as described herein. For example, the semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0108] The quantum dots have a full width of half maximum (FWHW) of the emission wavelength spectrum of about 45 nm or less, specifically about 40 nm or less, more specifically about 30 nm or less, and in this range, color purity and color reproducibility can be improved. In addition, the light emitted through such quantum dots is emitted in all directions, and a wide viewing angle can be improved.

[0109] The quantum dots may be in the form of spherical, pyramidal, multi-arm or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplatelets, or the like.

[0110] By adjusting the size of the quantum dots, the energy band gap can be adjusted, and light of various wavelengths can be obtained in the quantum dot light emitting layer. Therefore, by using quantum dots of different sizes, a light emitting device that emits light of various wavelengths can be realized. Specifically, the size of the quantum dots can be selected to emit red light, green light, and / or blue light. In addition, the size of the quantum dots can be configured to combine lights of various colors to emit white light.

[0111] According to one embodiment, the light emitting layer includes first quantum dots and second quantum dots, the energy band gap of the first quantum dots is larger than the energy band gap of the second quantum dots, and the first quantum dots may emit light in a certain wavelength range of the visible light range.

[0112] In this case, the second quantum dots having a smaller energy band gap transfer holes or electrons to the first quantum dots having a larger energy band gap, and the first quantum dots to which the holes or electrons have been transferred can emit light in a certain wavelength range of the visible light range (e.g., red light, green light, blue light). Thus, by including two or more types of quantum dots having different energy band gaps, hole injection or electron injection in the light-emitting layer can be improved, thereby providing a light-emitting device with improved luminous efficiency.

[0113] According to one embodiment, the light emitting component emitted from the second quantum dots may be 15% or less, 10% or less, 9% or less, 8% or less, 7% or less, 6% or less, or 5% or less of the total light emitting components emitted from the light emitting layer.

[0114] According to an embodiment, the energy band gap of the first quantum dots may be 2.8 eV or less, 2.79 eV or less, 2.78 eV or less, 2.77 eV or less, 2.76 eV or less, or 2.75 eV or less.

[0115] According to an embodiment, the energy band gap of the second quantum dots may be 1.90 to 2.79 eV.

[0116] According to an embodiment, the difference between the energy band gap of the first quantum dot and the energy band gap of the second quantum dot may be 0.01 eV or more, 0.02 eV or more, 0.03 eV or more, or 0.04 eV or more.

[0117] According to an embodiment, the first quantum dot and the second quantum dot may each independently include a II-VI group semiconductor compound, a III-V group semiconductor compound, a III-VI group semiconductor compound, a I-III-VI group semiconductor compound, a IV-VI group semiconductor compound, a group IV element or a compound thereof, or any combination thereof.

[0118] According to an embodiment, the first quantum dot may include a core and a shell covering at least a portion of the core, and the second quantum dot may include a core and, optionally, a shell covering at least a portion of the core. That is, the first quantum dot may have a core-shell structure, and the second quantum dot may have a single structure (core) or a core-shell structure.

[0119] According to an embodiment, the cores of the first quantum dots and the second quantum dots may include a II-VI semiconductor compound, a III-V semiconductor compound, or any combination thereof.

[0120] According to an embodiment, in the first quantum dot and the second quantum dot, the core may be selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, G In one embodiment, the semiconductor laser may include aN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof.

[0121] For example, in the first quantum dot and the second quantum dot, the core may include ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnSTe, InP, InAs, InZnP, InGaP, InGaN, or any combination thereof.

[0122] According to an embodiment, in the first quantum dot and the second quantum dot, the shell may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, ZnSeS, ZnTeS, GaAs, GaP, GaN, GaO, GaSb, HgS, HgSe, HgTe, InAs, InP, InS, InZnP, InZnS, InGaP, InGaN, InSb, AlAs, AlP, AlSb, PbS, TiO, SrSe, or any combination thereof.

[0123] According to an embodiment, the first quantum dot may include a core and a shell covering at least a portion of the core, and the shell may include two or more layers.

[0124] According to an embodiment, the first quantum dot includes a core and a shell covering at least a portion of the core, the shell in the first quantum dot includes i) a first shell covering at least a portion of the core, and ii) a second shell covering at least a portion of the first shell, the first shell and the second shell being different from each other, the second quantum dot includes a core and optionally includes a shell covering at least a portion of the core, and the shell in the second quantum dot may be a single layer. That is, the first quantum dot has a triple structure of a core, a first shell, and a second shell, and the second quantum dot may have a single structure (core) or a dual structure of a core and a shell.

[0125] According to one embodiment, when the first quantum dot has a triple structure of core-first shell-second shell and the second quantum dot has a single structure (core) or a dual structure of core-shell, the core composition of the first quantum dot and the second quantum dot may be the same, and the composition of the first shell of the first quantum dot and the shell of the second quantum dot may be the same.

[0126] According to another embodiment, the first quantum dot and the second quantum dot each independently include a core, a first shell covering at least a portion of the core, and a second shell covering at least a portion of the first shell, and the size of the core in the first quantum dot and the size of the core in the second quantum dot may be different from each other. That is, the first quantum dot and the second quantum dot may simultaneously have a triple structure of a core, a first shell, and a second shell.

[0127] According to another embodiment, when the first quantum dot and the second quantum dot simultaneously have a triple structure of core-first shell-second shell, the size of the core in the first quantum dot is smaller than the size of the core in the second quantum dot.

[0128] According to another embodiment, when the first quantum dot and the second quantum dot simultaneously have a triple structure of a core, a first shell, and a second shell, the cores in the first quantum dot and the second quantum dot may contain a first element, and the content of the first element in the core of the first quantum dot may be different from the content of the first element in the second quantum dot.

[0129] The first element may correspond to a doping material of the core in the first quantum dot and the second quantum dot. Even if the core in the first quantum dot and the core in the second quantum dot contain the same element, the content of the element (e.g., the first element) corresponding to the doping material of the core may be adjusted to adjust the size of the core.

[0130] For example, the core of the first quantum dot may include ZnSeTe, and the Te content of the core of the first quantum dot may be 3.5% based on the total core content of 100% in the first quantum dot, and the core of the second quantum dot may include ZnSeTe, and the Te content of the core of the second quantum dot may be 7% based on the total core content of 100% in the second quantum dot. In this case, the size of the core of the first quantum dot and the size of the core of the second quantum dot may be the same.

[0131] According to an embodiment, the first quantum dots and the second quantum dots may optionally include a ligand disposed on the shell surface.

[0132] According to an embodiment, the ligand may include a hole transporting ligand, an electron transporting ligand, or any combination thereof.

[0133] According to an embodiment, the hole transporting ligand may include an aromatic hydrocarbon group-containing compound, for example, an aromatic hydrocarbon group-containing carboxylic acid, an aromatic hydrocarbon group-containing amine, an aromatic hydrocarbon group-containing alcohol, an aromatic hydrocarbon group-containing thiol, an aromatic hydrocarbon group-containing phosphine oxide, an aromatic hydrocarbon group-containing phosphine, an aromatic hydrocarbon group-containing phosphonic acid, an aromatic hydrocarbon group-containing ester, an aromatic hydrocarbon group-containing acid anhydride, or any combination thereof.

[0134] According to one embodiment, the electron transporting ligand is an aliphatic hydrocarbon group-containing compound, a halogen ion, BF 4 - For example, the electron transporting ligand may include an aliphatic hydrocarbon group-containing carboxylic acid, an aliphatic hydrocarbon group-containing amine, an aliphatic hydrocarbon group-containing alcohol, an aliphatic hydrocarbon group-containing thiol, an aliphatic hydrocarbon group-containing phosphine oxide, an aliphatic hydrocarbon group-containing phosphine, an aliphatic hydrocarbon group-containing phosphonic acid, an aliphatic hydrocarbon group-containing ester, an aliphatic hydrocarbon group-containing acid anhydride, an aliphatic hydrocarbon group-containing halide, an aliphatic hydrocarbon group-containing acyl halide, a halogen ion, BF 4 - , or any combination thereof.

[0135] According to an embodiment, the content of the first quantum dots may be greater than the content of the second quantum dots, for example, the first quantum dots may be more than 50% by weight with respect to a total content of the first quantum dots and the second quantum dots being 100% by weight.

[0136] The first quantum dots and the second quantum dots have an emission wavelength spectrum full width at half maximum (FWHM) of about 45 nm or less, specifically about 40 nm or less, more specifically about 30 nm or less, and in this range, color purity and color reproducibility can be improved. In addition, light emitted through such quantum dots is emitted in all directions, and a wide viewing angle can be improved.

[0137] In addition, the first quantum dots and the second quantum dots may have a shape such as a spherical, pyramidal, multi-arm or cubic nanoparticle, nanotube, nanowire, nanofiber, nanoplate-like particle, etc.

[0138] By adjusting the size of the quantum dots, the energy band gap can be adjusted, and light of various wavelengths can be obtained from the light emitting layer. Therefore, by using quantum dots of different sizes, a light emitting device that emits light of various wavelengths can be realized. Specifically, the size of the quantum dots can be selected to emit red light, green light, and / or blue light. In addition, the size of the quantum dots can be configured to combine lights of various colors to emit white light.

[0139] The light-emitting layer may be a single quantum dot layer or a stack of two or more quantum dot layers, for example, the light-emitting layer may be a single quantum dot layer or a stack of 2 to 100 quantum dot layers.

[0140] The light-emitting layer may further include different quantum dots in addition to those described herein.

[0141] The light-emitting layer may further include a dispersion medium in which the quantum dots are dispersed in a naturally coordinated form, in addition to the quantum dots as described herein. The dispersion medium may include an organic solvent, a polymer resin, or any combination thereof. The dispersion medium may be any transparent medium that does not affect the optical performance of the quantum dots, is not altered by light, does not reflect light, and does not absorb light. For example, the organic solvent may include toluene, chloroform, ethanol, octane, or any combination thereof, and the polymer resin may include epoxy resin, silicone resin, polystyrene resin, acrylate resin, or any combination thereof.

[0142] The light emitting layer may be formed by applying a composition for forming a light emitting layer including quantum dots onto the hole transport region and volatilizing at least a portion of the solvent contained in the composition for forming a light emitting layer.

[0143] For example, the solvent may be water, hexane, chloroform, toluene, octane, or the like.

[0144] The composition for forming the light emitting layer may be applied by using a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, an inkjet printing method, or the like.

[0145] When the light emitting device 10A is a full-color light emitting device, the light emitting layer 150 may include light emitting layers that emit different colors for each individual sub-pixel.

[0146] For example, the light emitting layer 150 may be patterned into a first color light emitting layer, a second color light emitting layer, and a third color light emitting layer for each individual subpixel. At this time, at least one of the light emitting layers may necessarily include quantum dots. Specifically, the first color light emitting layer may be a quantum dot light emitting layer including quantum dots, and the second color light emitting layer and the third color light emitting layer may be organic light emitting layers including an organic compound. Here, the first color to the third color are different from each other, specifically, the first color to the third color may have different maximum emission wavelengths from each other. The first color to the third color may be combined with each other to become white.

[0147] As another example, the light emitting layer may further include a fourth color light emitting layer, and at least one of the first to fourth color light emitting layers may be a quantum dot light emitting layer including quantum dots, and the remaining light emitting layers may be organic light emitting layers including organic compounds. Here, the first to fourth colors may be different from each other, and more specifically, the first to fourth colors may have different maximum emission wavelengths from each other. The first to fourth colors may be combined with each other to form white.

[0148] Alternatively, the light emitting device 10 may have a structure in which two or more light emitting layers emitting the same or different colors are stacked in contact with or spaced apart from each other. Various modifications are possible, such as at least one of the two or more light emitting layers being a quantum dot light emitting layer including quantum dots and the remaining light emitting layers being organic light emitting layers including organic compounds. Specifically, the light emitting device 10 includes a first color light emitting layer and a second color light emitting layer, where the first color and the second color may be the same color or different colors. More specifically, the first color and the second color may both be blue.

[0149] The light-emitting layer may further include at least one selected from the group consisting of an organic compound and a semiconductor compound, in addition to the quantum dots.

[0150] Specifically, the organic compound may include a host and a dopant. The host and the dopant may include hosts and dopants that are commonly used in organic light emitting devices.

[0151] In particular, the semiconducting compound may be an organic perovskite and / or an inorganic perovskite.

[0152] [Electron transport region in intermediate layer 130] The electron transport region may have i) a single layer structure made of a single material, ii) a single layer structure made of a single layer containing a plurality of different materials, or iii) a multilayer structure including a plurality of layers containing a plurality of different materials.

[0153] The electron transport region can include a buffer layer, a hole blocking layer, an electron modulating layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0154] For example, the electron transport region may have a structure such as an electron transport layer / electron injection layer, a hole blocking layer / electron transport layer / electron injection layer, an electron control layer / electron transport layer / electron injection layer, or a buffer layer / electron transport layer / electron injection layer, which are stacked in this order from the light emitting layer.

[0155] The electron transport region may include a metal oxide, where the metal in the metal oxide may include Zn, Ti, Zr, Sn, W, Ta, Ni, Mo, Cu, Mg, Co, Mn, Y, Al, or any combination thereof, or may include a metal sulfide, such as CuSCN.

[0156] The electron transport region (e.g., the electron injection layer or the electron transport layer in the electron transport region) can include a metal oxide represented by Formula 3:

[0157] <Chemical formula 3> MpOq

[0158] In the above Chemical Formula 3, M is Zn, Ti, Zr, Sn, W, Ta, Ni, Mo, Cu or V;

[0159] p and q are each independently an integer between 1 and 5;

[0160] The third compound may be represented by the following Formula 3-1.

[0161] <Chemical formula 3-1> Zinc (1-r) M'r O

[0162] In the above Chemical Formula 3-1, M' is Mg, Co, Ni, Zr, Mn, Sn, Y, Al, or any combination thereof;

[0163] r is a number greater than 0 and equal to or less than 0.5.

[0164] According to an embodiment, the electron transport region may include ZnO or ZnMgO.

[0165] For example, the electron transport region may be made of ZnO, TiO 2 , WO 3 , SnO 2 , In 2 O 3 , Nb 2 O 5 , Fe 2 O 3 , CEO 2 , SrTiO 3 , Zn 2 SnO 4 , BaSnO 3 , In 2 S 3 , ZnSiO, PC60BM, PC70BM, Mg-doped ZnO (ZnMgO), Al-doped ZnO (AZO), Ga-doped ZnO (GZO), In-doped ZnO (IZO), Al-doped TiO 2 , Ga-doped TiO 2 , In-doped TiO 2 , Al-doped WO 3 , Ga-doped WO 3 , In-doped WO 3 , Al-doped SnO 2 , Ga-doped SnO 2 , In-doped SnO 2 , Mg-doped In 2 O 3 , Al doped In 2 O3 , Ga doped In 2 O 3 , Mg doped Nb 2 O 5 , Al doped Nb 2 O 5 , Ga doped Nb 2 O 5 , Mg doped Fe 2 O 3 , Al-doped Fe 2 O 3 , Ga doped Fe 2 O 3 , In-doped Fe 2 O 3 , Mg-doped CeO 2 , Al-doped CeO 2 , Ga-doped CeO 2 , In-doped CeO 2 , Mg-doped SrTiO 3 , Al-doped SrTiO 3 , Ga doped SrTiO 3 , In-doped SrTiO 3 , Mg doped Zn 2 SnO 4 , Al doped Zn 2 SnO 4 , Ga doped Zn 2 SnO 4 , In-doped Zn 2 SnO 4 , Mg-doped BaSnO 3 , Al-doped BaSnO 3 , Ga doped BaSnO 3 , In-doped BaSnO 3 , Mg-doped In 2 S 3 , Al doped In 2 S 3 , Ga doped In 2 S 3 , In-doped In 2 S 3, Mg-doped ZnSiO, Al-doped ZnSiO, Ga-doped ZnSiO, In-doped ZnSiO, or any combination thereof.

[0166] The electron transport region (e.g., a buffer layer, a hole blocking layer, an electron modulating layer, or an electron transport layer in the electron transport region) is at least one π-electron deficient nitrogen-containing C 1 -C 60 It may include metal-free compounds that contain π electron-deficient nitrogen-containing C1-C60 cyclic groups.

[0167] The electron transport region (e.g., a buffer layer, a hole blocking layer, an electron modulating layer, or an electron transport layer in the electron transport region) is at least one π-electron deficient nitrogen-containing C 1 -C 60 It may include metal-free compounds containing π electron-deficient nitrogen-containing C1-C60 cyclic groups.

[0168] For example, the electron transport region can include a compound represented by formula 601:

[0169] <Chemical formula 601> [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0170] In the formula 601, Ar 601 and L 601 are, independently of each other, at least one R 10a with or without substitution of C 3 -C 60 A carbocyclic group or at least one R 10awith or without substitution of C 1 -C 60 is a heterocyclic group,

[0171] xe11 is 1, 2 or 3,

[0172] xe1 is 0, 1, 2, 3, 4 or 5,

[0173] R 601 At least one R 10a with or without substitution of C 3 -C 60 Carbocyclic group, at least one R 10a with or without substitution of C 1 -C 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 ), -C(=O)(Q 601 ), -S(=O) 2 (Q 601 ), or -P(=O)(Q 601 )(Q 602 ) and

[0174] Q 601 Or the above Q 603 The explanations regarding Q 1 Refer to the explanation regarding

[0175] xe21 is 1, 2, 3, 4 or 5,

[0176] The aforementioned Ar 601 , L 601 and R 601 At least one of, independently of each other, is selected from at least one R 10a Substituted or unsubstituted π-electron deficient nitrogen-containing C 1 -C 60 It may be a cyclic group.

[0177] For example, in the above formula 601, when xe11 is two or more, two or more Ar 601 can be linked to each other via a single bond.

[0178] As another example, in formula 601, Ar 601 can be a substituted or unsubstituted anthracene group.

[0179] As yet another example, the electron transport region can include a compound represented by formula 601-1:

[0180] <Chemical formula 601-1> JPEG2025505370000017.jpg50144

[0181] In the above formula 601-1, X 614 is N or C(R 614 ) and X 615 is N or C(R 615 ) and X 616 is N or C(R 616 ) and X 614 Or X 616 At least one of is N;

[0182] L 611 Or L 613 The explanations regarding the above are given in L 601 Refer to the explanation regarding

[0183] For the explanations of xe611 to xe613, please refer to the explanations of xe1.

[0184] R 611 Or R 613 For the explanation of 601 Refer to the explanation regarding

[0185] R 614 Or R 616 are each independently hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, C 1 -C 20 Alkyl group, C 1 -C 20Alkoxy group, at least one R 10a with or without substitution of C 3 -C 60 A carbocyclic group or at least one R 10a with or without substitution of C 1 -C 60 It may be a heterocyclic group.

[0186] For example, in formulae 601 and 601-1, xe1 and xe611 to xe613 may be 0, 1, or 2, independently of each other.

[0187] The electron transport region can include one of compounds ET1 through ET45 below, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:

[0188] JPEG2025505370000018.jpg84144

[0189] JPEG2025505370000019.jpg92144

[0190] JPEG2025505370000020.jpg81144

[0191] JPEG2025505370000021.jpg80144

[0192] JPEG2025505370000022.jpg78144

[0193] JPEG2025505370000023.jpg62144

[0194] JPEG2025505370000024.jpg28144

[0195] The thickness of the electron transport region may be about 100 Å to about 5,000 Å, for example, about 160 Å to about 4,000 Å. When the electron transport region includes a buffer layer, a hole blocking layer, an electron modulating layer, an electron transport layer, or any combination thereof, the thickness of the buffer layer, the hole blocking layer, or the electron modulating layer may be, independently of one another, about 20 Å to about 1,000 Å, for example, about 30 Å to about 300 Å, and the thickness of the electron transport layer may be about 100 Å to about 1,000 Å, for example, about 150 Å to about 500 Å. When the thicknesses of the buffer layer, the hole blocking layer, the electron modulating layer, the electron transport layer, and / or the electron transport region satisfy the above-mentioned ranges, satisfactory electron transport properties can be obtained without a substantial increase in driving voltage.

[0196] The electron transport region (eg, the electron transport layer in the electron transport region) may further include a metal-containing material in addition to the materials described above.

[0197] The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ion of the alkali metal complex may be Li ion, Na ion, K ion, Rb ion, or Cs ion, and the metal ion of the alkaline earth metal complex may be Be ion, Mg ion, Ca ion, Sr ion, or Ba ion. The ligands coordinated to the metal ions of the alkali metal complex and the alkaline earth metal complex may each independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0198] For example, the metal-containing material can include a Li complex. The Li complex can include, for example, the following compounds ET-D1 (LiQ) or ET-D2:

[0199] JPEG2025505370000025.jpg101133

[0200] The electron transport region may include an electron injection layer that facilitates electron injection from the second electrode 150. The electron injection layer may be in direct contact with the second electrode 150.

[0201] The electron injection layer may have i) a single layer structure consisting of a single layer made of a single material, ii) a single layer structure consisting of a single layer containing a plurality of different materials, or iii) a multilayer structure having a plurality of layers containing a plurality of different materials.

[0202] The electron injection layer can comprise an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0203] The alkali metals may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metals may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metals may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0204] The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound may include an oxide, a halide (e.g., a fluoride, a chloride, a bromide, an iodide, etc.), a telluride, or any combination thereof, of the alkali metals, the alkaline earth metals, and the rare earth metals, respectively.

[0205] The alkali metal-containing compound is Li 2O, Cs 2 O, K 2 It may contain an alkali metal oxide such as O; an alkali metal halide such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI; or any combination thereof. The alkaline earth metal-containing compound is BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1), Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1) and may contain an alkaline earth metal compound such as this. The rare earth metal-containing compound is YbF 3 , ScF 3 , Sc 2 O 3 , Y 2 O 3 , Ce 2 O 3 , GdF 3 , TbF 3 , YbI 3 , ScI 3 , TbI 3 , or any combination thereof. Or, the rare earth metal-containing compound may contain a lanthanoid metal telluride. Examples of the lanthanoid metal telluride are LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La 2 Te 3 , Ce 2 Te 3 , Pr 2 Te 3 , Nd 2 Te 3 , Pm 2 Te 3 , Sm 2 Te 3 , Eu 2 Te 3 , Gd 2 Te 3 , Tb 2 Te 3 , Dy 2 Te 3 , Ho 2 Te 3 , Er2 Te 3 , Tm 2 Te 3 , Yb 2 Te 3 , Lu 2 Te 3 It may include the following.

[0206] The alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes can include i) one of the alkali metal, alkaline earth metal, and rare earth metal ions as described above, and ii) a ligand bound to the metal ion, such as, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0207] The electron injection layer may consist solely of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof, as described above, or may further include an organic material (e.g., a compound represented by formula 601 above).

[0208] According to an embodiment, the electron injection layer may be i) an alkali metal-containing compound (e.g., an alkali metal halide) or ii) a) an alkali metal-containing compound (e.g., an alkali metal halide) and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposition layer, a RbI:Yb co-deposition layer, a LiF:Yb co-deposition layer, etc.

[0209] When the electron injection layer further comprises an organic material, the alkali metal, alkaline earth metal, rare earth metal, alkali metal-containing compound, alkaline earth metal-containing compound, rare earth metal-containing compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, or any combination thereof may be uniformly or non-uniformly dispersed in a matrix containing the organic material.

[0210] The thickness of the electron injection layer may be about 1 Å to about 100 Å, or about 3 Å to about 90 Å. When the thickness of the electron injection layer satisfies the above range, satisfactory electron injection characteristics can be obtained without a substantial increase in driving voltage.

[0211] [Second electrode 150] The second electrode 150 is disposed on the intermediate layer 130. The second electrode 150 may be a cathode, which is an electron injection electrode. In this case, the material for the second electrode 150 may be a metal, an alloy, a conductive compound, or any combination thereof, having a low work function.

[0212] The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0213] The second electrode 150 may have a single-layer structure having a single layer, or a multi-layer structure having multiple layers.

[0214] [Capping layer] A first capping layer may be disposed on the outer side of the first electrode 110, and / or a second capping layer may be disposed on the outer side of the second electrode 150. Specifically, the light emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, and the second electrode 150 are stacked in this order, a structure in which the first electrode 110, the intermediate layer 130, the second electrode 150, and the second capping layer are stacked in this order, or a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, the second electrode 150, and the second capping layer are stacked in this order.

[0215] Light generated in the light-emitting layer in the intermediate layer 130 of the light-emitting element 10 can be extracted to the outside through the first electrode 110, which is a semi-transparent electrode or a transparent electrode, and the first capping layer, and light generated in the light-emitting layer in the intermediate layer 130 of the light-emitting element 10 can be extracted to the outside through the second electrode 150, which is a semi-transparent electrode or a transparent electrode, and the second capping layer.

[0216] The first and second capping layers may improve external light emitting efficiency according to the principle of constructive interference, thereby increasing the light extraction efficiency of the light emitting device 10 and improving the light emitting efficiency of the light emitting device 10.

[0217] Each of the first capping layer and the second capping layer may include a material having a refractive index (at 589 nm) of 1.6 or greater.

[0218] The first capping layer and the second capping layer may be, independently of each other, an organic capping layer containing an organic material, an inorganic capping layer containing an inorganic material, or an organic-inorganic composite capping layer containing an organic material and an inorganic material.

[0219] At least one of the first capping layer and the second capping layer may independently include a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may be optionally substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. According to an embodiment, at least one of the first capping layer and the second capping layer may independently include an amine group-containing compound.

[0220] For example, at least one of the first capping layer and the second capping layer can, independently of one another, comprise a compound represented by formula 201, a compound represented by formula 202, or any combination thereof.

[0221] According to another embodiment, at least one of the first capping layer and the second capping layer may independently include one of the compounds HT28 to HT33, one of the compounds CP1 to CP6, β-NPB, or any of the compounds thereof:

[0222] JPEG2025505370000026.jpg86144

[0223] JPEG2025505370000027.jpg60144

[0224] [Electronic equipment] The light emitting element may be included in various electronic devices, for example, a light emitting device, an authentication device, etc.

[0225] The electronic device (e.g., light emitting device) may further include i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer in addition to the light emitting element. The color filter and / or the color conversion layer may be disposed in at least one traveling direction of light emitted from the light emitting element. For example, the light emitted from the light emitting element may be blue light or white light. Please refer to the above for the description of the light emitting element. According to an embodiment, the color conversion layer may include quantum dots. The quantum dots may be, for example, quantum dots as described herein.

[0226] The electronic device may include a first substrate, the first substrate may include a plurality of sub-pixel regions, the color filter may include a plurality of color filter regions corresponding to the plurality of sub-pixel regions, and the color conversion layer may include a plurality of color conversion regions corresponding to the plurality of sub-pixel regions.

[0227] A pixel defining film is disposed between the plurality of sub-pixel regions to define each of the sub-pixel regions.

[0228] The color filter may further include a plurality of color filter regions and a light-shielding pattern arranged between the plurality of color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light-shielding pattern arranged between the plurality of color conversion regions.

[0229] The color filter regions (or the color conversion regions) include a first region emitting a first color light, a second region emitting a second color light, and / or a third region emitting a third color light, and the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the color filter regions (or the color conversion regions) may include quantum dots. Specifically, the first region includes red quantum dots, the second region includes green quantum dots, and the third region does not include quantum dots. For the description of the quantum dots, please refer to the description in this specification. The first region, the second region, and / or the third region may further include a scatterer.

[0230] For example, the light emitting element may emit a first light, the first region may absorb the first light and emit a 1-1 color light, the second region may absorb the first light and emit a 2-1 color light, and the third region may absorb the first light and emit a 3-1 color light. In this case, the 1-1 color light, the 2-1 color light, and the 3-1 color light may have different maximum emission wavelengths. Specifically, the first light may be blue light, the 1-1 color light may be red light, the 2-1 color light may be green light, and the 3-1 color light may be blue light.

[0231] The electronic device may further include a thin film transistor in addition to the light emitting device as described above. The thin film transistor may include a source electrode, a drain electrode, and an active layer, and one of the source electrode and the drain electrode may be electrically connected to one of the first electrode and the second electrode of the light emitting device.

[0232] The thin film transistor may further include a gate electrode and a gate insulating film.

[0233] The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, an oxide semiconductor, or the like.

[0234] The electronic device may further include a sealing part for sealing the light emitting element. The sealing part may be disposed between the color filter and / or color conversion layer and the light emitting element. The sealing part allows light from the light emitting element to be extracted to the outside while at the same time blocking the penetration of outside air and moisture into the light emitting element. The sealing part may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing part may be a thin film encapsulation layer including one or more organic layers and / or inorganic layers. When the sealing part is a thin film encapsulation layer, the electronic device may be flexible.

[0235] In addition to the color filter and / or color conversion layer, various functional layers may be disposed on the sealing part depending on the application of the electronic device. The functional layers may include a touch screen layer, a polarizing layer, etc. The touch screen layer may be a pressure-sensitive touch screen layer, an electrostatic touch screen layer, or an infrared touch screen layer.

[0236] The authentication device may further include a biometric information collecting means in addition to the light-emitting element as described above. The authentication device may be, for example, a biometric authentication device that uses biometric information of a living body (for example, a fingertip, an eye, etc.) to authenticate an individual.

[0237] The electronic devices can be used in various displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, electronic game consoles, medical equipment (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse rate measuring devices, pulse wave measuring devices, electrocardiogram display devices, ultrasound diagnostic devices, and endoscopic display devices), fish finders, various measuring instruments, gauges (e.g., gauges for vehicles, aircraft, and ships), projectors, and the like.

[0238] [Explanation regarding Figures 2 and 3] FIG. 2 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0239] The light emitting device of FIG. 2 includes a substrate 100, a thin film transistor (TFT), a light emitting element, and an encapsulant 300 that seals the light emitting element.

[0240] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be disposed on the substrate 100. The buffer layer 210 may serve to prevent impurities from penetrating through the substrate 100 and provide a flat surface on the upper surface of the substrate 100.

[0241] A thin film transistor (TFT) may be disposed on the buffer layer 210. The thin film transistor (TFT) may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0242] The active layer 220 includes an inorganic semiconductor, an organic semiconductor, or an oxide semiconductor, such as silicon or polysilicon, and includes a source region, a drain region, and a channel region.

[0243] A gate insulating layer 230 for insulating the active layer 220 from a gate electrode 240 may be disposed on the active layer 220 , and a gate electrode 240 may be disposed on the gate insulating layer 230 .

[0244] An interlayer insulating layer 250 may be disposed on the gate electrode 240. The interlayer insulating layer 250 is disposed between the gate electrode 240 and the source electrode 260, and between the gate electrode 240 and the drain electrode 270, and serves to insulate them.

[0245] A source electrode 260 and a drain electrode 270 may be disposed on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose a source region and a drain region of the active layer 220, and the source electrode 260 and the drain electrode 270 may be disposed to contact the exposed source region and the drain region of the active layer 220.

[0246] Such a thin film transistor (TFT) is electrically connected to the light emitting element to drive the light emitting element, and is covered and protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light emitting element is provided on the passivation layer 280. The light emitting element includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0247] The first electrode 110 may be disposed on the passivation layer 280. The passivation layer 280 may be disposed so as to not cover the entire drain electrode 270 but to expose a predetermined area, and the first electrode 110 may be disposed so as to be connected to the exposed drain electrode 270.

[0248] A pixel defining (defining) film 290 including an insulating material may be disposed on the first electrode 110. The pixel defining (defining) film 290 exposes a predetermined region of the first electrode 110, and the intermediate layer 130 may be formed on the exposed region. The pixel defining (defining) film 290 may be a polyimide-based or polyacrylic-based organic film. Although not shown in FIG. 2, some or more layers of the intermediate layer 130 may be extended onto the pixel defining (defining) film 290 and disposed in the form of a common layer.

[0249] A second electrode 150 may be disposed on the intermediate layer 130, and a capping layer 170 may be further formed on the second electrode 150. The capping layer 170 may be formed to cover the second electrode 150.

[0250] The encapsulant 300 may be disposed on the capping layer 170. The encapsulant 300 may be disposed on the light emitting device to protect the light emitting device from moisture and oxygen. The encapsulant 300 may be made of silicon nitride (SiN x ), silicon oxide (SiO x), indium tin oxide, indium zinc oxide, or any combination thereof; or an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sorbonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), an epoxy resin (e.g., AGE (aliphatic glycidyl ether), etc.), or any combination thereof, or a combination of an inorganic film and an organic film.

[0251] FIG. 3 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.

[0252] The light emitting device of Fig. 3 is the same as the light emitting device of Fig. 2, except that a light blocking pattern 500 and a functional region 400 are further disposed on the encapsulant 300. The functional region 400 may be i) a color filter region, ii) a color conversion region, or iii) a combination of a color filter region and a color conversion region. According to an embodiment, the light emitting element included in the light emitting device of Fig. 3 may be a tandem light emitting element.

[0253] [Manufacturing method] Each layer included in the hole transport region, the light emitting layer, and the electron transport region may be formed in a predetermined region using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, laser printing, laser induced thermal imaging (LITI) method, etc. For example, the light emitting layer may be formed by inkjet printing.

[0254] When each layer included in the hole transport region, the light emitting layer, and each layer included in the electron transport region are formed by vacuum deposition, the deposition conditions are, for example, a deposition temperature of about 100 to about 500° C., a deposition temperature of about 10 -8 or about 10 -3The vacuum level of torr and the deposition rate within the range of about 0.01 to about 100 Å / sec can be selected taking into consideration the material contained in the layer to be formed and the structure of the layer to be formed.

[0255] [Terminology definition] In this specification, C 3 -C 60 A carbocyclic group means a cyclic group having 3 to 60 carbon atoms, the ring atoms of which are carbon only. 1 -C 60 The heterocyclic group means a cyclic group having 1 to 60 carbon atoms and further containing a heteroatom as a ring-forming atom in addition to carbon. 3 -C 60 Carbocyclic groups and C 1 -C 60 Each heterocyclic group may be a monocyclic group consisting of one ring, or a polycyclic group in which two or more rings are fused together. 1 -C 60 The heterocyclic group can have 3 to 61 ring atoms.

[0256] In the present specification, the cyclic group is 3 -C 60 Carbocyclic groups and C 1 -C 60 Any of the heterocyclic groups is also included.

[0257] In this specification, π-electron excess C 3 -C 60 Cyclic group (π electron-rich C 3 -C 60 A cyclic group is a ring-forming moiety that does not contain *-N=*' and has 3 to 60 carbon atoms. 1 -C 60 Cyclic group (π electron-deficient nitrogen-containing C 1 -C 60 The term "cyclic group" refers to a ring-forming moiety and means a heterocyclic group having 1 to 60 carbon atoms containing *-N=*'.

[0258] for example, Said C 3 -C 60 The carbocyclic group may be i) a group T1, or ii) a fused ring group in which two or more groups T1 are fused to each other (e.g., a cyclopentadiene group, an adamantane group, a norbornane group, a benzene group, a pentalene group, a naphthalene group, an azulene group, an indacene group, an acenaphthylene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a perylene group, a pentaphene group, a heptalene group, a naphthacene group, a picene group, a hexacene group, a pentacene group, a rubicene group, a coronene group, an ovalene group, an indene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, an indenophenanthrene group, or an indenoanthracene group);

[0259] Said C 1 -C 60The heterocyclic group is i) a group T2, ii) a fused ring group in which two or more groups T2 are fused to each other, or iii) a fused ring group in which one or more groups T2 and one or more groups T1 are fused to each other (e.g., a pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoindole group, a benzosilole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzosilole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolocarbazole group, a benzofurocarbazole group, a benzothienocarbazole group, a benzosilolocarbazole group, a benzoindolocarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthosilole group, a benzofurodibenzofuran group, a benzofurodibenzothiophene group, a benzothienodibenzo A thiophene group, a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a benzoxazole group, a benzoisoxazole group, a benzothiazole group, a benzoisothiazole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a quinoline group, an isoquinoline group, a benzoquinone group, azadibenzosilole group, azadibenzothiophene group, azadibenzofuran group, etc.),

[0260] The π-electron excess C 3 -C 60The cyclic group is i) a group T1, ii) a fused ring group in which two or more groups T1 are fused to each other, iii) a group T3, iv) a fused ring group in which two or more groups T3 are fused to each other, or v) a fused ring group in which one or more groups T3 and one or more groups T1 are fused to each other (for example, the above-mentioned C 3 -C 60 a carbocyclic group, a 1H-pyrrole group, a silole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzisoindole group, a naphthoindole group, a benzosilole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzosilole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolocarbazole group, a benzofurocarbazole group, a benzothienocarbazole group, a benzosilolocarbazole group, a benzoindolocarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthosilole group, a benzofurodibenzofuran group, a benzofurodibenzothiophene group, a benzothienodibenzothiophene group, etc.);

[0261] The π-electron-deficient nitrogen-containing C 1 -C 60The cyclic group is i) a group T4, ii) a fused ring group in which two or more groups T4 are fused to each other, iii) a fused ring group in which one or more groups T4 and one or more groups T1 are fused to each other, iv) a fused ring group in which one or more groups T4 and one or more groups T3 are fused to each other, or v) a fused ring group in which one or more groups T4, one or more groups T1, and one or more groups T3 are fused to each other (e.g., a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a benzoxazole group, azacarbazole group, azafluorene group, azadibenzosilole group, azadibenzothiophene group, azadibenzofuran group, etc.),

[0262] The group T1 is a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, a norbornane (or a bicyclo[2.2.1]heptane) group, a norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group, or a benzene group;

[0263] the group T2 is a furan group, a thiophene group, a 1H-pyrrole group, a silole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a tetrazine group, a pyrrolidine group, an imidazolidine group, a dihydropyrrole group, a piperidine group, a tetrahydrolysine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydrorazine group, a dihydropyrazine group, a tetrahydropyridazine group or a dihydropyridazine group;

[0264] the group T3 is a furan group, a thiophene group, a 1H-pyrrole group, a silole group or a borole group;

[0265] The group T4 may be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetrazine group.

[0266] As used herein, the cyclic group, C 3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic groups, π-electron-rich C 3 -C 60 Cyclic group or π-electron deficient nitrogen-containing C 1 -C 60The term "cyclic group" may refer to any group fused to a cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.) depending on the structure of the chemical formula in which the term is used. For example, a "benzene group" may be a benzo group, a phenyl group, a phenylene group, etc., which can be easily understood by a person skilled in the art based on the structure of the chemical formula containing the "benzene group".

[0267] For example, monovalent C 3 -C 60 Carbocyclic groups and monovalent C 1 -C 60 Examples of heterocyclic groups are C 3 -C 10 Cycloalkyl groups, C 1 -C 10 Heterocycloalkyl groups, C 3 -C 10 Cycloalkenyl group, C 1 -C 10 Heterocycloalkenyl group, C 6 -C 60 Aryl group, C 1 -C 60 including heteroaryl groups, monovalent non-aromatic condensed polycyclic groups and monovalent non-aromatic condensed heteropolycyclic groups, divalent C 3 -C 60 Carbocyclic groups and monovalent C 1 -C 60 Examples of heterocyclic groups are C 3 -C 10 Cycloalkylene group, C 1 -C 10 Heterocycloalkylene group, C 3 -C 10 Cycloalkenylene group, C 1 -C 10 Heterocycloalkenylene group, C 6 -C 60 Arylene group, C 1 -C 60 These may include heteroarylene groups, divalent non-aromatic fused polycyclic groups, and substituted or unsubstituted divalent non-aromatic fused polycyclic heterocyclic groups.

[0268] In this specification, C 1 -C 60 The alkyl group means a linear or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, an neopentyl group, an isopentyl group, a sec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, an isodecyl group, a sec-decyl group, a tert-decyl group, and the like. 1 -C 60 The alkylene group is 1 -C 60 It means a divalent group having the same structure as an alkyl group.

[0269] In this specification, C 2 -C 60 The alkenyl group is C 2 -C 60 It means a monovalent hydrocarbon group containing one or more carbon-carbon double bonds in the middle or at the end of the alkyl group, and specific examples thereof include an ethenyl group, a propenyl group, and a butenyl group. 2 -C 60 The alkenylene group is 2 -C 60 It means a divalent group having the same structure as an alkenyl group.

[0270] In this specification, C 2 -C 60 The alkynyl group is C 2 -C 60It means a monovalent hydrocarbon group containing one or more carbon-carbon triple bonds in the middle or at the end of the alkyl group, and specific examples thereof include an ethynyl group, a propynyl group, and the like. 2 -C 60 The alkynylene group is 2 -C 60 It means a divalent group having the same structure as an alkynyl group.

[0271] In this specification, C 1 -C 60 The alkoxy group is -OA. 101 (Here, A 101 C 1 -C 60 Specific examples of the aryl group include methoxy, ethoxy, and isopropyloxy groups.

[0272] In this specification, C 3 -C 10 The cycloalkyl group means a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and specific examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantanyl group, a norbornanyl group (or a bicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, a bicyclo[2.2.2]octyl group, and the like. 3 -C 10 The cycloalkylene group is 3 -C 10 It means a divalent group having the same structure as a cycloalkyl group.

[0273] In this specification, C 1 -C 10The heterocycloalkyl group means a monovalent cyclic group having 1 to 10 carbon atoms, which further contains at least one heteroatom as a ring-forming atom in addition to carbon atoms, and specific examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, a tetrahydrothiophenyl group, and the like. 1 -C 10 The heterocycloalkylene group is 1 -C 10 It means a divalent group having the same structure as a heterocycloalkyl group.

[0274] In this specification, C 3 -C 10 The cycloalkenyl group means a monovalent cyclic group having 3 to 10 carbon atoms, which has at least one carbon-carbon double bond in the ring but does not have aromaticity. Specific examples thereof include a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. 3 -C 10 The cycloalkenylene group is 3 -C 10 It means a divalent group having the same structure as a cycloalkenyl group.

[0275] In this specification, C 1 -C 10 The heterocycloalkenyl group is a monovalent cyclic group having 1 to 10 carbon atoms, which further contains at least one heteroatom as a ring-forming atom in addition to carbon atoms, and has at least one double bond in the ring. 1 -C 10 Specific examples of the heterocycloalkenyl group include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, and a 2,3-dihydrothiophenyl group. 1 -C 10 The heterocycloalkenylene group is 1 -C 10 It means a divalent group having the same structure as a heterocycloalkenyl group.

[0276] In this specification, C 6 -C 60 An aryl group means a monovalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms, C 6 -C 60 An arylene group refers to a divalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. 6 -C 60 Specific examples of the aryl group include a phenyl group, a pentalenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a heptalenyl group, a naphthacenyl group, a picenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, and an ovalenyl group. 6 -C 60 Aryl groups and the C 6 -C 60 When an arylene group contains two or more rings, the two or more rings may be fused together.

[0277] In this specification, C 1 -C 60 Heteroaryl means a monovalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms, which further contains at least one heteroatom as a ring-forming atom in addition to carbon atoms, C 1 -C 60 The heteroarylene group means a divalent group that contains at least one heteroatom as a ring-forming atom in addition to carbon atoms and has a heterocyclic aromatic system having 1 to 60 carbon atoms. 1 -C 60 Specific examples of the heteroaryl group include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, a benzoquinolinyl group, an isoquinolinyl group, a benzoisoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthrolinyl group, a phthalazinyl group, and a naphthyridinyl group. 1 -C60 Heteroaryl groups and the C 1 -C 60 When a heteroarylene group contains more than one ring, the two or more rings may be fused together.

[0278] In the present specification, a monovalent non-aromatic condensed polycyclic group refers to a monovalent group (e.g., having 8 to 60 carbon atoms) in which two or more rings are condensed with each other, the ring atoms are only carbon, and the entire molecule has non-aromaticity. Specific examples of the monovalent non-aromatic condensed polycyclic group include an indenyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, an indenophenanthrenyl group, and an indenoanthracenyl group. In the present specification, a divalent non-aromatic condensed polycyclic group refers to a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group.

[0279] As used herein, the term "monovalent non-aromatic condensed heteropolycyclic group" refers to a monovalent group (e.g., having 1 to 60 carbon atoms) in which two or more rings are condensed with each other and which further contains at least one heteroatom as a ring-forming atom other than carbon atoms, and in which the entire molecule has non-aromatic properties. Specific examples of the monovalent non-aromatic hetero-condensed polycyclic group include a pyrrolyl group, a thiophenyl group, a furanyl group, an indolyl group, a benzoindolyl group, a naphthoindolyl group, an isoindolyl group, a benzisoindolyl group, a naphthoisoindolyl group, a benzosilolyl group, a benzothiophenyl group, a benzofuranyl group, a carbazolyl group, a dibenzosilolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzosilolyl group, an azadibenzothiophenyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, and a thiadiazolyl group. Groups include benzopyrazolyl group, benzimidazolyl group, benzoxazolyl group, benzothiazolyl group, benzoxadiazolyl group, benzothiadiazolyl group, imidazopyridinyl group, imidazopyrimidinyl group, imidazotriazinyl group, imidazopyrazinyl group, imidazopyridazinyl group, indenocarbazolyl group, indolocarbazolyl group, benzofurocarbazolyl group, benzothienocarbazolyl group, benzosilolocarbazolyl group, benzoindolocarbazolyl group, benzocarbazolyl group, benzonaphthofuranyl group, benzonaphthothiophenyl group, benzonaphthosilolyl group, benzofurodibenzofuranyl group, benzofurodibenzothiophenyl group, benzothienodibenzothiophenyl group, etc. In this specification, the divalent non-aromatic hetero-condensed polycyclic group means a divalent group having the same structure as the monovalent non-aromatic hetero-condensed polycyclic group.

[0280] In this specification, C 6 -C 60 The aryloxy group is -OA. 102 (Here, A 102 C 6 -C60 aryl group), 6 -C 60 The arylthio group is -SA 103 (Here, A 103 C 6 -C 60 aryl group).

[0281] In this specification, C 7 -C 60 The arylalkyl group is -A 104 A 105 (Here, A 104 is C 1 -C 54 is an alkylene group, 105 is C 6 -C 59 In the present specification, C 2 -C 60 The heteroarylalkyl group is -A 106 A 107 (Here, A 106 is C 1 -C 59 is an alkylene group, 107 is C 1 -C 59 Heteroaryl groups are shown.

[0282] As used herein, "R 10a "teeth, Deuterium (-D), -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, or a nitro group;

[0283] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C 3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic groups, C 6 -C 60 Aryloxy group, C 6 -C 60 Arylthio group, C 7 -C 60 Arylalkyl groups, C 2 -C 60Heteroarylalkyl groups, -Si(Q 11 )(Q 12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O) 2 (Q 11 ), -P(=O)(Q 11 )(Q 12 ), or any combination thereof, substituted or unsubstituted, 1 -C 60 Alkyl group, C 2 -C 60 Alkenyl group, C 2 -C 60 Alkynyl group, or C 1 -C 60 Alkoxy groups;

[0284] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C 1 -C 60 Alkyl group, C 2 -C 60 Alkenyl group, C 2 -C 60 Alkynyl group, C 1 -C 60 Alkoxy group, C 3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic groups, C 6 -C 60 Aryloxy group, C 6 -C 60 Arylthio group, C 7 -C 60 Arylalkyl groups, C 2 -C 60 Heteroarylalkyl groups, -Si(Q 21 )(Q 22 )(Q 23 ), -N(Q 21 )(Q 22 ), -B(Q 21 )(Q 22 ), -C(=O)(Q 21 ), -S(=O)2 (Q 21 ), -P(=O)(Q 21 )(Q 22 ), or any combination thereof, substituted or unsubstituted, 3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic groups, C 6 -C 60 Aryloxy group, C 6 -C 60 Arylthio group, C 7 -C 60 Arylalkyl group or C 2 -C 60 a heteroarylalkyl group; or

[0285] -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=O)(Q 31 ), -S(=O) 2 (Q 31 ) or -P(=O)(Q 31 )(Q 32 ); could be.

[0286] In this specification, Q 1 Or Q 3 , Q 11 Or Q 13 , Q 21 Or Q 23 , and Q 31 Or Q 33 are, independently of each other, hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C 1 -C 60 Alkyl group; C 2 -C 60 Alkenyl group; C 2 -C 60 Alkynyl group; C 1 -C 60 Alkoxy group; or deuterium, -F, cyano group, C 1 -C60 Alkyl group, C 1 -C 60 C, substituted or unsubstituted with alkoxy groups, phenyl groups, biphenyl groups, or any combination thereof 3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic group; C 7 -C 60 Arylalkyl group; or C 2 -C 60 a heteroarylalkyl group;

[0287] As used herein, heteroatom refers to any atom other than a carbon atom. Examples of said heteroatoms include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0288] As used herein, "Ph" means a phenyl group, "Me" means a methyl group, "Et" means an ethyl group, "tert-Bu" or "Bu t " means a tert-butyl group, and "OMe" means a methoxy group.

[0289] In the present specification, the term "biphenyl group" means a "phenyl group substituted with a phenyl group". The "biphenyl group" is a group in which the substituent is "C 6 -C 60 It belongs to the "substituted phenyl group" which is an "aryl group."

[0290] In the present specification, the term "terphenyl group" means a "phenyl group substituted with a biphenyl group." The "terphenyl group" is a group in which the substituent is "C 6 -C 60 Aryl-substituted C 6 -C 60 It belongs to the "substituted phenyl group" which is an "aryl group."

[0291] In this specification, * and *', unless otherwise defined, refer to the bond sites between adjacent atoms in a given chemical formula or moiety.

[0292] The compound and the light-emitting device according to an embodiment of the present invention will be described in more detail below with reference to synthesis examples and examples. In the synthesis examples below, in the expression "B was used instead of A," the molar equivalents of A and B are the same. EXAMPLES

[0293] <Synthesis Example 1. Production of ZnSeTe / ZnSe quantum dots> 2 mmol of zinc acetate, 2 ml of oleic acid (OA), and 15 ml of 1-octadecene (ODE) are placed in a three-neck flask and kept in a vacuum at 120°C until it dissolves transparently. Then, Se-diphenylphosphine (DPP) (1 mmol of Se in 0.5 ml of DPP) and Te-trioctylphosphine (TOP) (0.349 mmol of Te in 0.8 ml of TOP) that have been prepared in advance are poured in at 220°C in sequence, and the reaction is maintained for 30 minutes, and further reacted at 300°C for 1 hour. Then, the temperature is lowered, and an excess of EtOH is added to precipitate the mixture, which is then dispersed in hexane.

[0294] 3 mmol of zinc acetate, 2 ml of oleic acid (OA), and 10 ml of trioctylamine (TOA) are placed in a three-neck flask, and the flask is left in a vacuum at 120°C until it dissolves transparently. The previously synthesized ZnSeTe core is then injected, and the flask is left in a vacuum for 5 minutes. Hydrogen fluoride (HF) is then injected, and the flask is left in a vacuum for 10 minutes. The solution temperature is then raised to 240°C, and 4 ml of 0.5 M zinc oleate and 0.6 ml of 2 M Se-trioctylphosphine (TOP) are then injected, and the flask is then heated to 340°C and the ZnSe shell is grown for 30 minutes.

[0295] <Synthesis Example 2. Production of ZnSeTe / ZnSe / ZnS quantum dots> After the synthesis of the ZnSeTe / ZnSe, 3 ml of 0.5 M zinc oleate and 1.2 ml of 2 M S-trioctylphosphine (TOP) are further injected at 340° C., and the reaction is carried out for 30 minutes to grow a ZnS shell.

[0296] The energy band gaps of the quantum dots according to Synthesis Examples 1 and 2 and the ZnS quantum dots were measured, and the results are shown in Table 1 below.

[0297] [Table 1]

[0298] <Example 1> On the patterned ITO substrate, a hole injection layer (HIL) (poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS)), a hole transport layer (HTL) (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (TFB)), a quantum dot (QD) light-emitting layer, an electron transport layer (ETL) (ZnMgO), a cathode A light-emitting device was fabricated by stacking layers (Al) in order. The hole injection layer (HIL), hole transport layer (HTL), quantum dot (QD) emitting layer, and electron transport layer (ETL) were each fabricated by spin coating, and the cathode was fabricated by deposition, with the hole injection layer (HIL) having a thickness of 1,400 Å, the hole transport layer (HTL) having a thickness of 400 Å, the quantum dot (QD) emitting layer having a thickness of 200 Å, and the electron transport layer (ETL) having a thickness of 500 Å.

[0299] The hole injection layer (HIL) and the hole transport layer (HTL) are formed by 10 -3 After the VCD process was performed at Torr, a baking process was performed at 230° C. for 30 minutes. -3 The VCD step was carried out at Torr, followed by a bake step at 100° C. for 10 minutes.

[0300] The quantum dot (QD) light emitting layer was formed using ZnSeTe / ZnSe / ZnS quantum dots and ZnSeTe / ZnSe quantum dots. The cathode was formed using Al.

[0301] <Comparative Example 1> A light-emitting device was fabricated using the same method as in Example 1, except that only ZnSeTe / ZnSe / ZnS quantum dots were used instead of ZnSeTe / ZnSe / ZnS quantum dots and ZnSeTe / ZnSe quantum dots when forming the light-emitting layer.

[0302] <Comparative Example 2> A light-emitting device was fabricated using the same method as in Example 1, except that ZnSeTe / ZnSe / ZnS quantum dots and ZnSeTe / ZnSe quantum dots were used instead of ZnSeTe / ZnSe / ZnS quantum dots and ZnSeTe / ZnSe quantum dots, and ZnS quantum dots (95:5 weight ratio) were used when forming the light-emitting layer.

[0303] <Evaluation Example 1> The luminance-dependent luminous efficiency (EQE) of the light emitting devices according to Example 1, Comparative Example 1, and Comparative Example 2 was measured, and the results are shown in Figure 4. The luminance and efficiency of the devices were measured using a luminance meter PR650, with power supplied from a current-voltage meter (Kethley SMU 236).

[0304] 4, it can be seen that the light emitting efficiency of the light emitting device according to Example 1 is improved compared to the light emitting devices according to Comparative Examples 1 and 2.

Claims

1. A first electrode; a second electrode facing the first electrode; an intermediate layer including a light-emitting layer disposed between the first electrode and the second electrode; The light-emitting layer includes first quantum dots and second quantum dots, The energy band gap of the first quantum dot is larger than the energy band gap of the second quantum dot; The first quantum dot is a light-emitting element that emits light in a partial wavelength range of the visible light range.

2. The light emitting device according to claim 1 , wherein a light emitting component emitted from the second quantum dots accounts for 10% or less of the total light emitting components emitted from the light emitting layer.

3. The light-emitting device of claim 1 , wherein the energy band gap of the first quantum dot is less than or equal to 2.8 eV.

4. The light-emitting device according to claim 1 , wherein a difference between an energy band gap of the first quantum dot and an energy band gap of the second quantum dot is 0.01 eV or more.

5. The light-emitting device according to claim 1, wherein the first quantum dot and the second quantum dot each independently comprise a II-VI group semiconductor compound, a III-V group semiconductor compound, a III-VI group semiconductor compound, a I-III-VI group semiconductor compound, a IV-VI group semiconductor compound, a Group IV element or a compound thereof, or any combination thereof.

6. The first quantum dot includes a core and a shell covering at least a portion of the core, The light-emitting device of claim 1 , wherein the second quantum dot comprises a core and, optionally, a shell covering a portion or portions of the core.

7. 7. The light emitting device of claim 6, wherein the core comprises a II-VI semiconductor compound, a III-V semiconductor compound, or any combination thereof.

8. The core is made of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSe. Te, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHg S, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZn STe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb 7. The light-emitting device of claim 6, comprising: AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof.

9. 7. The light-emitting device of claim 6, wherein the shell comprises CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, ZnSeS, ZnTeS, GaAs, GaP, GaN, GaO, GaSb, HgS, HgSe, HgTe, InAs, InP, InS, InZnP, InZnS, InGaP, InGaN, InSb, AlAs, AlP, AlSb, PbS, TiO, SrSe, or any combination thereof.

10. The first quantum dot includes a core and a shell covering at least a portion of the core, The light-emitting device of claim 1 , wherein the shell comprises two or more layers.

11. The first quantum dot includes a core and a shell covering at least a portion of the core, In the first quantum dot, the shell includes i) a first shell covering at least a portion of the core, and ii) a second shell covering at least a portion of the first shell; the first shell and the second shell are different from each other; the second quantum dot comprises a core and, optionally, a shell covering at least a portion of the core; The light-emitting device of claim 1 , wherein the shell in the second quantum dot is a single layer.

12. The first quantum dot and the second quantum dot have the same core composition; The light-emitting device of claim 11 , wherein the composition of the first shell in the first quantum dot and the composition of the shell in the second quantum dot are the same.

13. The first quantum dot and the second quantum dot each independently include a core, a first shell covering at least a portion of the core, and a second shell covering at least a portion of the first shell; The light-emitting device according to claim 1 , wherein a core size of the first quantum dot and a core size of the second quantum dot are different from each other.

14. The light-emitting device according to claim 13 , wherein a core size of the first quantum dot is smaller than a core size of the second quantum dot.

15. The light-emitting device according to claim 1 , wherein a content of the first quantum dots is greater than a content of the second quantum dots.

16. the first electrode is an anode; the second electrode is a cathode; the intermediate layer further includes a hole transport region interposed between the first electrode and the light emitting layer, and an electron transport region interposed between the light emitting layer and the second electrode; the hole transport region includes a hole injection layer, a hole transport layer, a light-emitting auxiliary layer, an electron blocking layer, or any combination thereof; 10. The light-emitting device of claim 1, wherein the electron transport region comprises a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

17. the electron transport region comprises an electron transport layer; 17. The light-emitting device of claim 16, wherein the electron transport layer comprises a metal oxide represented by the following Formula 1: <Chemical formula 1> MpOq In the above Chemical Formula 1, M is Zn, Ti, Zr, Sn, W, Ta, Ni, Mo, Cu or V; p and q are each independently an integer of 1 or 5;

18. 18. An electronic device comprising a light-emitting element according to any one of the preceding claims.

19. Further comprising a thin film transistor, The thin film transistor includes a source electrode and a drain electrode, The electronic device of claim 18 , wherein a first electrode of the light emitting device is electrically connected to at least one of a source electrode and a drain electrode of the thin film transistor.

20. 20. The electronic device of claim 18, further comprising a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or any combination thereof.

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