Laser Diode Components

Abstract

The present invention describes a laser diode component (1) comprising a semiconductor layer stack (2) having an active region (4) for emitting laser radiation, a photonic crystal structure (8) having a number of structuring portions (10), a contact (12) for making electrical contact with the laser diode component (1), and one contact (13, 20) having a number of contact portions (21) arranged in recesses (24) in the semiconductor layer stack (2), the contact portions (21) passing through the active region (4).

Description

[Technical field]

[0001] A laser diode component is identified, for example the laser diode component is a Photonic Crystal Surface Emitting Laser (PCSEL). [Background technology]

[0002] PCSELs are devices that use photonic crystals specifically to obtain vertical laser emission. One advantage is a symmetric Gaussian beam profile. However, it is difficult to obtain high output power while maintaining a high beam quality. For example, when the emission aperture defined by the current injection is enlarged towards the emission side, the Gaussian beam profile can degrade to a donut-shaped profile. This is due to current crowding near the contact structure, which can be ring-shaped. This is problematic for high-power lasers if, for example, a Gaussian beam profile is required for coupling to a fiber. Summary of the Invention

[0003] In particular, it is of interest to identify high performance laser diode components.

[0004] This object is achieved in particular by a laser diode component according to the independent claims. Further embodiments and further developments of the laser diode component are the subject of the dependent claims.

[0005] According to at least one embodiment of the laser diode component, the laser diode component has a semiconductor stack including an active region for emitting laser radiation. For example, the laser diode component is suitable for emitting laser radiation having a wavelength in the visible spectral range from ultraviolet to infrared. The laser diode component may be a high-power laser diode, for example having a power in the watt range from 1 W to more than 10 W, and the laser diode component may be operated in pulsed or continuous wave mode. The laser radiation emitted from the laser diode component may have a symmetric beam profile, for example a Gaussian beam profile.

[0006] According to at least one embodiment, the laser diode component comprises a photonic crystal structure comprising a plurality of structured portions. A "photonic crystal structure" is a structure in which a periodic change in refractive index is formed, with a photonic band structure having a forbidden energy region in which electromagnetic waves cannot propagate. The structured portions may be provided to cause a periodic change in the refractive index in the photonic crystal structure. For example, the structured portions may be regularly arranged in the photonic crystal structure, forming a two-dimensional lattice structure. The structured portions may have a spacing within a wavelength of the laser radiation, and thus may be in the range of a fraction of a micrometer, the wavelength being the wavelength in the medium, e.g., the photonic crystal structure, and thus may be calculated from the average refractive index of the photonic crystal structure. Furthermore, the structured portions may have a dimension up to about half the wavelength of the laser radiation. "Within the range" or "about" means, for example, a maximum deviation from the calculated value of 10%.

[0007] According to at least one embodiment, the laser diode component comprises contacts for electrical contact with the laser diode component, one contact being arranged in a recess in the semiconductor layer stack and comprising a number of contact portions passing through the active region, for example extending from a side of the laser diode component different from the emission side, for example from the side opposite the emission side, through the active region in a direction towards the emission side.

[0008] In accordance with at least one embodiment of the laser diode component, the laser diode component comprises: a semiconductor layer stack having an active region for emitting laser radiation; A photonic crystal structure having a plurality of structured portions; a contact for electrically contacting the laser diode component and a contact having a plurality of contact portions disposed in a recess of the semiconductor stack; The contact portion penetrates the active region.

[0009] According to at least one embodiment or configuration, the semiconductor stack comprises a first semiconductor region of a first conductivity type, e.g., a p-doped semiconductor region, and a second semiconductor region of a second conductivity type, e.g., an n-doped semiconductor region, e.g., the second semiconductor region is an emitter region of the semiconductor stack.

[0010] The active region may be disposed between the first and second semiconductor regions. The active region may include a sequence of monolayers forming a quantum well structure, in particular a single quantum well structure (SQW) or a multiple quantum well structure (MQW).

[0011] Furthermore, the first and second semiconductor regions may each comprise a series of monolayers, some of which may be undoped or lightly doped.

[0012] A single layer of a semiconductor region may be epitaxially deposited on a growth substrate.

[0013] The semiconductor stack may include a first cladding layer disposed on the first semiconductor region and a second cladding layer disposed on the second semiconductor region, with the active region disposed between the cladding layers.

[0014] Materials based on compound semiconductors, for example arsenides, phosphides or nitrides, are suitable for the semiconductor regions or single layers of the semiconductor stack. "Based on compound semiconductors, for example arsenides, phosphides or nitrides" in the present context means that the semiconductor layer is based on Al nGa m In 1-n-m As, Al n Ga m In 1-n-m P, In n Ga 1-n As m P 1-m Or Al n Ga m In 1-n-m N, where 0≦n≦1, 0≦m≦1, and n+m≦1. The material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, Al n Ga m In 1-n-m As, Al n Ga m In 1-n-m P, In n Ga 1-n As m P 1-m Or Al n Ga m In 1-n-m Apart from the additive components which do not substantially change the properties of the N material, one or more dopants may be present. However, for the sake of simplicity, the above formula includes only substantial components of the crystal lattice (Al, Ga, In, As or P or n in each case), but these components may be partially replaced by small amounts of other substances. Pentary semiconductors consisting of Al, Ga, In (group III), P and As (group V) are also conceivable.

[0015] According to at least one embodiment or configuration, the photonic crystal structure comprises a base layer. For example, the base layer comprises a crystalline material. "Crystal material" refers to a material whose components are primarily arranged in a crystalline structure. The photonic crystal structure can be part of a semiconductor stack. Also, as mentioned above, the crystalline material may be a semiconductor material in connection with a semiconductor region of the semiconductor stack. The structured portion is, for example, a void in the base layer. In particular, the medium in the structured portion or the void has a refractive index different from the refractive index of the base layer.

[0016] According to at least one embodiment or configuration, the laser diode component is a PCSEL. In a PCSEL, a propagating wave couples with a photonic crystal structure to form a standing wave mode, and nodes occur at multiples of half the wavelength of the laser radiation. As mentioned above, the lattice period of the photonic crystal structure, or the spacing between the structuring portions, may correspond to the wavelength of the laser radiation. Thus, some of the nodes may occur at locations where the structuring portions are present.

[0017] The photonic crystal structure may diffract the laser radiation in a vertical direction, which may be parallel to a surface normal of the radiation extraction face of a laser diode component located on the emitting side.

[0018] The photonic crystal structure may extend along a horizontal plane that is disposed perpendicular to the vertical direction.

[0019] According to at least one embodiment or configuration, the contacts or recesses may be regularly arranged in the semiconductor stack to form a two-dimensional lattice. A plurality of regularly arranged contacts allows for uniform current injection and thus an improved beam profile even with an enlarged emission aperture, thus enabling a high performance laser diode component.

[0020] According to at least one embodiment or configuration, the through contact comprises a transparent conductive material. For example, the transparent conductive material is a transparent conductive oxide (TCO). TCOs include metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). The group of TCOs includes binary metal oxygen compounds such as ZnO, SnO2, and In2O3, as well as Zn2SnO4, CdSnO3, ZnSnO3, MgIn2O4, GaInO3, Zn2In2O5, In4Sn3O 12 or mixtures of different transparent conductive oxides. It should be noted that the TCOs do not necessarily correspond to a stoichiometric composition and can be p or n doped.

[0021] Alternatively or additionally, the through contacts may comprise a reflective conductive material, which may comprise or consist of a metal or metal compound, suitable materials being, for example, Ag or Au.

[0022] According to at least one embodiment or configuration, the laser diode component includes an insulating layer that laterally surrounds the contact within the recess. The insulating layer may prevent current leakage at the contact along the sidewalls of the recess. The insulating layer may include a transparent electrically insulating material. Suitable materials for the insulating layer include, for example, silicon oxide, e.g., SiO2, or silicon nitride.

[0023] According to at least one embodiment or configuration, the photonic crystal structure is disposed outside the active region. For example, the photonic crystal structure may be disposed on a side of the active region opposite the emission side of the laser diode component. However, the photonic crystal structure may also be disposed on a side of the active region opposite the emission side of the laser diode component. In particular, the photonic crystal structure is disposed near the active region between the cladding layers.

[0024] According to at least one embodiment or configuration, if the photonic crystal structure is arranged outside the active region, the recesses or contacts of the semiconductor layer sequence may have a lateral dimension and / or a spacing larger than the structuring. The lateral dimension may be determined parallel to a horizontal plane of the photonic crystal structure. The lateral dimension and / or the spacing may be larger than the wavelength of the laser radiation. However, the recesses or contacts may also have the same lateral dimension and / or spacing as the structuring.

[0025] As mentioned above, by selecting a transparent conductive material for the contacts, the optical mode is transmitted through the contacts or recesses. Furthermore, by selecting a reflective conductive material for the contacts, the optical mode is effectively reflected off the sidewalls of the recesses. High transparency or reflectivity is advantageous, especially when the lateral dimensions and / or spacing of the contacts are larger than the wavelength of the laser radiation.

[0026] According to at least one embodiment or configuration, the photonic crystal structure is part of the semiconductor layer stack. In particular, the recess in which the contact is arranged forms a structuring of the photonic crystal structure. According to this embodiment or configuration, the overlap with the wave is higher than if the photonic crystal structure were arranged outside the active region. This reduces the refractive index contrast while still achieving the desired overall effect.

[0027] For example, contacts or recesses may be placed where the nodes occur. As mentioned for the structuring, the recesses or contacts may have a spacing within one wavelength of the laser radiation and therefore may be in the range of fractions of a micrometer. Also, the recesses or contacts may have dimensions up to about half the wavelength of the laser radiation.

[0028] According to at least one embodiment or configuration, the contacts may have different sizes and / or shapes and / or be arranged in different lattices with different patterns or different periodicities, e.g., as part of a photonic crystal structure, e.g., there may be two differently shaped recesses on two different lattices.

[0029] According to at least one embodiment or configuration, the contact has a first contact for electrically contacting a first semiconductor region of the semiconductor stack and a second contact for electrically contacting a second semiconductor region of the semiconductor stack, and the through contact portion may be part of the second contact portion.

[0030] According to at least one embodiment or configuration, the radiation extraction surface, which is arranged on the emission side of the laser diode component and from which a substantial part of the laser radiation is emitted, does not have a contact. Instead, the contact allows current to be injected into the emission side region of the semiconductor layer stack from a side different from the emission side, for example from the side opposite the emission side. Thus, radiation losses at the radiation extraction surface due to radiation absorption in the contact can be reduced.

[0031] For example, the first contact may comprise a first contact pad disposed on a rear side of the laser diode component and the second contact may comprise a second contact pad disposed on a rear side of the laser diode component, the rear side being opposite the emission side, or the first contact pad may be disposed on a lateral side of the laser diode component.

[0032] According to at least one embodiment or configuration, the laser diode component includes a reflective layer facing the rear side of the laser diode component. The reflective layer may include alternating high and low refractive index sublayers. For example, the reflective layer is a Bragg mirror. The reflective layer serves to reflect radiation impinging on the rear side toward the emission side.

[0033] The laser diode components are suitable for use in display applications, such as head-up displays, AR (Augmented Reality) applications, material processing applications, LIDAR (Light Detection and Ranging, and Light Imaging, Detection and Ranging) systems, and in hard drives, Blu-ray, or optical data transmission.

[0034] Further preferred embodiments and further developments of the laser diode component will become apparent from the exemplary embodiments described below using FIGS. [Brief description of the drawings]

[0035] [Figure 1] 1 shows a schematic cross-sectional view of an exemplary embodiment of a laser diode component. [Diagram 2] 1 shows a schematic cross-sectional view of an exemplary embodiment of a laser diode component. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0036] In the figures, identical, equivalent or identically acting elements may be designated by the same reference numerals. The figures are schematic and therefore are not necessarily drawn to scale. Relatively small elements, especially layer thicknesses, may instead be depicted exaggeratedly larger for the purposes of greater clarity.

[0037] An exemplary embodiment of a laser diode component 1 is described with reference to Figure 1. In particular, the laser diode component 1 is a PCSEL.

[0038] The laser diode component 1 comprises a semiconductor layer stack 2. The semiconductor layer stack 2 is, for example, a thin-film semiconductor layer, which is grown, in particular epitaxially, on a growth substrate, after which the growth substrate is thinned or removed.

[0039] The semiconductor layer sequence 2 comprises a first semiconductor region 3 of a first conductivity type, for example a p-doped semiconductor region, and a second semiconductor region 5 of a second conductivity type, for example an n-doped semiconductor region, arranged above the first semiconductor region 3 in a vertical direction V. The vertical direction V may be opposite to the growth direction of the semiconductor layer sequence 2. The first and second semiconductor regions 3, 5 may each comprise a sequence of monolayers, some of which may be undoped or lightly doped.

[0040] The semiconductor layer stack 2 further comprises an active region 4 arranged between the first and second semiconductor regions 3, 5. In operation, the active region 4 emits laser radiation having a wavelength, for example, in the visible spectral range from ultraviolet to infrared.

[0041] The active region 4 may comprise a sequence of monolayers forming a quantum well structure, in particular a single quantum well structure (SQW) or a multiple quantum well structure (MQW), but it can also be a bulk layer or several bulk layers, such as a double heterostructure.

[0042] Furthermore, the first semiconductor region 3 includes a first cladding layer 6, the second semiconductor region 5 includes a second cladding layer 7, and the active region 4 is disposed between the cladding layers 6,7.

[0043] As mentioned above, materials based on compound semiconductors of arsenides, phosphides or nitrides are suitable, for example, for the semiconductor regions 3 , 4 , 5 of the semiconductor layer sequence 2 or for the single layers of the semiconductor layer sequence 2 .

[0044] The laser diode component 1 further comprises a photonic crystal structure 8 arranged outside the active region 4 between the active region 4 and the second cladding layer 7. The photonic crystal structure 8 comprises a base layer 9 and a structuring portion 10. The structuring portion 10 is produced, for example, by patterning the base layer 9, which may originally be a layer of uniform thickness, in a defined manner. The structuring portion 10 is, for example, an air gap in the base layer 9.

[0045] The photonic crystal structure 8 is part of the semiconductor layer stack 2. The base layer 9 comprises a semiconductor material as described above in connection with the semiconductor regions 3, 4, 5. Alternatively, the photonic crystal structure 8 may be a separate element with the base layer 9 formed from a material different from the semiconductor layer stack 2. However, the base layer 9 may in any case be a crystalline layer. The structuring 10 or the voids are filled with a medium having a refractive index different from the refractive index of the material of the base layer 9, for example air or SiO2.

[0046] The structured portions 10 are regularly arranged in the photonic crystal structure 8 and form a two-dimensional lattice structure. The structured portions 10 have a spacing d within the range of one wavelength of the laser radiation, thus in the range of a fraction of a micrometer, the wavelength being the wavelength in the medium or in the photonic crystal structure 8 and thus can be calculated from the average refractive index of the photonic crystal structure 8. Furthermore, the structured portions 10 have a lateral dimension a and a vertical dimension b up to about half the wavelength of the laser radiation, the lateral dimension a being determined parallel to the horizontal plane of the photonic crystal structure 8 and the vertical dimension b being determined parallel to the vertical direction V.

[0047] The structuring 10 is provided so as to induce a periodic variation in the refractive index in the photonic crystal structure 8 .

[0048] The photonic crystal structure 8 functions as part of a laser cavity. Furthermore, the photonic crystal structure 8 is capable of diffracting radiation in the vertical direction V, making the component 1 function as a surface emitting laser diode component.

[0049] The laser diode component 1 has a radiation extraction surface 1D, which is arranged on the emission side 1A of the laser diode component 1 and from which a substantial part of the laser radiation is emitted. A surface normal of the radiation extraction surface 1D may be parallel to the vertical direction V. The radiation extraction surface 1D may be a first main surface 2A of the semiconductor layer sequence 2.

[0050] Furthermore, on the rear side 1B opposite to the emission side 1A, the laser diode component 1 has a reflective layer 11 arranged on the second main surface 2B of the semiconductor layer stack 2, the second main surface 2B being arranged opposite to the first main surface 2A. The reflective layer 11 comprises alternatingly arranged sublayers 11A, 11B of high and low refractive index. Suitable materials for the sublayers 11A, 11B are dielectric materials such as titanium oxide and silicon dioxide. In particular, the reflective layer 11 is a Bragg mirror. The reflective layer 11 serves to reflect radiation impinging on the rear side 1B towards the emission side 1A.

[0051] The laser diode component 1 further comprises contacts 12 for electrically contacting the laser diode component 1 from the rear side 1B. As a result, the radiation extraction surface 1D can be free of contacts 12. Thus, radiation losses at the radiation extraction surface 1D due to radiation absorption in the contacts can be reduced.

[0052] The contact 12 has a first contact 13 for making electrical contact with the first semiconductor region 3 of the semiconductor stack 2, and further has a second contact 20 for making electrical contact with the second semiconductor region 5 of the semiconductor stack 2.

[0053] The first contact 13 comprises a first contact layer 14 arranged on the second major surface 2B between the first semiconductor region 3 and the reflective layer 11. The first contact layer 14 is in electrical contact with the first semiconductor region 3 and comprises a conductive material, for example a metallic material.

[0054] The first contact 13 further comprises a second contact layer 15 arranged on the side of the reflective layer 11 facing away from the semiconductor layer stack 2. The second contact layer 15 comprises a conductive material, for example a metallic material. The first and second contact layers 14, 15 ensure uniform current spreading.

[0055] The first and second contact layers 14, 15 are electrically interconnected by a contact element 16 disposed in an opening 18 in the reflective layer 11. An electrically insulating layer 19 covers the second contact layer 15.

[0056] The first contact 13 further comprises a first contact pad 17 on the rear side 1B which is in electrical contact with the second contact layer 15. The first contact pad 17 comprises a conductive material, for example a metallic material.

[0057] The second contact 20 comprises a number of contact portions 21 penetrating the active region 4. The number of contact portions 21 can exceed the two contact portions 21 shown in FIG. 1. In particular, the contact portions 21 extend from the rear side 1B of the laser diode component 1 through the active region 4 to the second semiconductor region 5. The contact portions 21 are arranged in recesses 24 of the semiconductor layer stack 2. The recesses 24 run from the semiconductor layer stack 2 through the reflective layer 11 to the rear side 1B. Each contact portion 21 covers an end face 24A and a side wall 24B of the respective recess 24. In particular, the contact portions 21 have the shape of a truncated cone or a quadrangular pyramid.

[0058] The contacts 21 and recesses 24 are arranged regularly in the semiconductor layer stack 2, for example forming a two-dimensional lattice. The regularly arranged contacts 21 allow for uniform current injection, which leads to an improved beam profile even with a larger emission aperture, which results in a high performance laser diode component 1.

[0059] The (average) lateral dimension a' and / or the spacing d' of the recesses 24 or the contacts 21 may be greater than the wavelength of the laser radiation. However, it is also possible for the recesses 24 or the contacts 21 to have the same lateral dimension a' and / or spacing d' as the structuring 10. Parts of the contacts 21 or the recesses 24 may be arranged at the points where the nodes occur. Advantageously, this reduces the absorption losses in the contacts 21.

[0060] The through contact 21 may, for example, be made of a reflective conductive material, such as a metal or metal compound including Ag or Au. Alternatively or additionally, the through contact 21 may comprise a transparent conductive material, such as a TCO.

[0061] The contact portion 21 passes through the first and second contact layers 14 , 15 .

[0062] The laser diode component 1 comprises an insulating layer 25 which laterally surrounds the contact 21 in the recess 24 and is arranged between the semiconductor layer sequence 2 and the contact 21. The insulating layer 25 may prevent leakage currents from occurring in the contact 21 along the sidewalls 24B of the recess 24. The insulating layer 25 may comprise a transparent, electrically insulating material. Suitable materials for the insulating layer 25 are, for example, silicon oxides, such as SiO2 or silicon nitride.

[0063] By combining a suitable insulating material and a suitable reflective material, the optical mode can be effectively reflected at the sidewall 24B.

[0064] By choosing transparent materials for the insulating layer 25 and the contacts 21 , the optical mode is allowed to transmit through the recesses 24 .

[0065] In particular, high transparency or reflectivity is advantageous when the lateral dimension a' and / or spacing d' of the contacts are larger than the wavelength of the laser radiation.

[0066] The lateral dimension a′ and the material of the contact 21 or recess 24 are selected so as not to degrade the electrical and optical function of the active region 4 .

[0067] The second contact 20 further has a connection portion 22 that mechanically and electrically connects the contact portions 21 to each other at the rear side 1B. The second contact 20 then has a second contact pad 23 arranged on the rear side 1B of the laser diode component 1 that is in electrical contact with the connection portion 22. The second contact pad 23 includes a conductive material, for example a metal material.

[0068] A further insulating layer 26 is arranged on the side of the contact 21 and the connection 22 facing away from the semiconductor layer sequence 2. The further insulating layer 26 provides electrical insulation in particular between the first contact pad 17 and the connection 22.

[0069] The laser diode component 1 is suitable as a high-power laser diode, for example with a power output in the watt range from 1 W to more than 10 W. The laser diode component 1 may be operated in pulsed or continuous wave mode. The laser radiation emitted by the laser diode component 1 has in particular a symmetrical beam profile, for example a Gaussian beam profile.

[0070] A further exemplary embodiment of the laser diode component 1 will be described in relation to Fig. 2. In particular, the laser diode component 1 is a PCSEL.

[0071] The laser diode component 1 comprises a photonic crystal structure 8 which is part of a semiconductor layer sequence 2 of the laser diode component 1. In particular, the semiconductor layer sequence 2 forms a base layer 9 of the photonic crystal structure 8. The semiconductor layer sequence 2 has a recess 24 in which a contact portion 21 of the second contact 20 is arranged, the recess 24 forming a structured portion 10 of the photonic crystal structure 8. In this exemplary embodiment, there is a higher overlap with the waves than in the exemplary embodiment described in connection with FIG. 1. This reduces the refractive index contrast while still achieving the desired overall effect.

[0072] The recesses 24 and contact portions 21 may be regularly arranged in the semiconductor layer stack 2 to form a two-dimensional lattice structure.

[0073] Preferably, the recesses 24 or contacts 21 have a spacing d' within the range of one wavelength of the laser radiation, and thus in the range of fractions of a micrometer. Also, the recesses 24 or contacts 21 can have a dimension a' up to about half the wavelength of the laser radiation. The recesses 24 and contacts 21 can be rectangular, circular or other shaped posts. The contacts 21 or recesses 24 may or may not be located where the nodes occur.

[0074] The recesses 24 or contacts 21 may have different sizes and / or shapes and / or be arranged in different lattices with different patterns or different periodicities, for example there may be two different shaped recesses on two different lattices.

[0075] The contact 21 may be formed from a reflective conductive material such as a metallic material or a transparent conductive material such as a TCO, as mentioned in connection with the exemplary embodiment of Figure 1, and is laterally surrounded by an insulating layer 25, which may have the characteristics described in connection with the exemplary embodiment of Figure 1.

[0076] The laser diode component 1 has a reflective layer 11 facing the rear side 1B, which may be part of the semiconductor layer stack 2 or the first semiconductor region 3 and which may consist of a semiconductor material and have sublayers with different refractive indices. The reflective layer 11 may also consist of a metal or a metal and a dielectric layer, as in the exemplary embodiment of FIG.

[0077] The laser diode component 1 has a first contact 13 including a contact layer 14 in electrical contact with the first semiconductor region 3 and a first contact pad 17 on a lateral side 1C of the laser diode component 1, the first contact pad 17 being in electrical contact with the contact layer 14.

[0078] An insulating layer 19 covers the contact layer 14 on the side facing the rear side 1B.

[0079] The second contact 20 comprises a large area contact pad 23 on the rear side 1B covering the insulating layer 19 and electrically connecting the contact portions 21 to each other. The contact portions 21 pass through the contact layer 14 and the insulating layer 19.

[0080] In addition, the laser diode component 1 may have any of the features, characteristics and advantages mentioned in connection with the further exemplary embodiments.

[0081] Having been described based on the above embodiments, the present invention is not limited to these embodiments, but rather includes any novel feature and any combination of features, and in particular includes any combination of features in the claims, even if that feature or combination itself is not explicitly recited in the claims or embodiments.

[0082] This patent application claims priority from German patent application 102022102877.1, the disclosure content of which is incorporated herein by reference. [Explanation of symbols]

[0083] 1 Laser diode parts 1A discharge side 1B rear side 1C Lateral side 1D radiation extraction surface 2. Semiconductor laminate 2A 1st main surface 2B 2nd main surface 3. First semiconductor region 4 Active area 5 Second semiconductor region 6 First cladding layer 7 Second cladding layer 8 Photonic Crystal Structure 9 Base layer 10 Structuring part 11 Reflective layer 11A,11B sublayer 12 Contact 13 First Contact 14 First contact layer 15 Second contact layer 16 Contact element 17 First Contact Pad 18 Aperture 19 Insulating layer 20 Second Contact 21 Contact section 22 Connection 23 Second Contact Pad 24 Recess 24A end face 24B side wall 25 Insulating layer 26 Insulating layer a,a' lateral dimensions b Vertical dimension d,d' interval V Vertical

Claims

1. A laser diode component (1), comprising: a semiconductor layer stack (2) having an active region (4) for emitting laser radiation; A photonic crystal structure (8) having a plurality of structured portions (10); a contact (12) for electrically contacting the laser diode component (1) and a contact (20) having a plurality of contact portions (21) arranged in a recess (24) of the semiconductor stack (2); The contact portion (21) penetrates the active region (4), the penetrating contact portion (21) comprising a transparent conductive material.

2. 2. The laser diode component (1) according to claim 1, wherein the through contact (21) comprises a reflective conductive material.

3. 3. The laser diode component (1) according to claim 1 or 2, wherein the laser diode component (1) comprises an insulating layer (25) laterally surrounding the contact portion (21) in the recess (24).

4. 4. The laser diode component (1) according to claim 3, wherein the insulating layer (25) comprises a transparent electrically insulating material.

5. The laser diode component (1) according to any one of the preceding claims, wherein the photonic crystal structure (8) is arranged outside the active region (4).

6. 6. The laser diode component (1) according to claim 5, wherein the recesses (24) or the contact areas (21) have a larger lateral dimension (a') and / or a spacing (d') than the structuring areas (10).

7. The laser diode component (1) according to any one of claims 1 to 6, wherein the photonic crystal structure (8) is arranged on a side of the active region (4) facing an emission side (1A) of the laser diode component (1).

8. The laser diode component (1) according to any one of the preceding claims, wherein the recess (24) forms a structuring (10) of the photonic crystal structure (8).

9. The laser diode component (1) according to any one of claims 1 to 8, wherein a radiation extraction surface (1D) arranged on the emission side (1A) of the laser diode component (1) and from which a substantial part of the laser radiation is emitted does not have the contact (12).

10. The laser diode component (1) according to any one of claims 1 to 9, wherein the contact (12) has a first contact (13) for electrically contacting a first semiconductor region (3) of the semiconductor stack (2) and further has a second contact (20) for electrically contacting a second semiconductor region (5) of the semiconductor stack (2), and the contact portion (21) is part of the second contact (20).

11. The laser diode component (1) according to any one of the preceding claims, wherein the laser diode component (1) comprises a reflective layer (11) facing a rear side (1B) of the laser diode component (1).

12. The laser diode component (1) according to any one of the preceding claims, wherein the photonic crystal structure (8) comprises a base layer (9) and the structuring portion (10) is a gap in the base layer (9).

13. Laser diode component (1) according to any one of the preceding claims, wherein the structuring (10) has a spacing (d) within one wavelength of the laser radiation.

14. 14. The laser diode component (1) according to claim 13, wherein the structuring (10) has dimensions (a, b) up to about half the wavelength of the laser radiation.

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