Apparatus and method for producing PVD perovskite films

Abstract

Embodiments described herein relate to a method of manufacturing a perovskite film device, the method including: heating a substrate and degassing the substrate in a processing system; depositing a first perovskite film layer on a surface of the substrate using multi-cathode sputtering deposition in a processing chamber; depositing a second perovskite film layer on the first perovskite film layer using multi-cathode sputtering deposition in a processing chamber; and annealing the substrate with the first and second perovskite film layers disposed thereon. The first perovskite film layer includes a first perovskite material. The second perovskite film layer includes a second perovskite material.

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to apparatus and methods for depositing perovskite films. More particularly, embodiments described herein relate to depositing perovskite films to produce perovskite film devices. [Background technology]

[0002] Functional perovskite materials have attracted attention for many emerging logic and memory applications, especially Ferroelectric Random Access Memory (Fe-RAM) and Resistive Random Access Memory (Re-RAM). In the past, dielectric physical vapor deposition (PVD) using hafnium oxide, tantalum oxide or aluminum oxide was used for these applications. However, due to the large number of elements and complex crystal structure in perovskite materials, the complex oxides of perovskite materials are more difficult to deposit. This makes high volume manufacturing and production ready 300mm deposition solutions to achieve high quality perovskite materials challenging.

[0003] Therefore, there is a need in the art for improved perovskite PVD apparatus and methods. Summary of the Invention

[0004] An embodiment of the present disclosure provides a method of manufacturing a perovskite film device, the method including heating and degassing a substrate in a processing system, depositing a perovskite film layer on a surface of the substrate using multi-cathode sputtering deposition in a processing chamber, and annealing the substrate with the perovskite film layer disposed thereon.

[0005] An embodiment of the present disclosure provides a method for manufacturing a perovskite film device. The method includes heating a substrate and degassing the substrate in a processing system, depositing a first perovskite film layer on a surface of the substrate using multi-cathode sputtering deposition in a processing chamber, depositing a second perovskite film layer on the first perovskite film layer using multi-cathode sputtering deposition in a processing chamber, and annealing the substrate with the first perovskite film layer and the second perovskite film layer disposed thereon. The first perovskite film layer includes a first perovskite material. The second perovskite film layer includes a second perovskite material.

[0006] An embodiment of the present disclosure provides a method of manufacturing a perovskite film device, the method including depositing a seed layer on a substrate, depositing a first perovskite film layer on the seed layer, depositing a second perovskite film layer on the first perovskite film layer, depositing a third perovskite film layer on the second perovskite film layer, annealing the substrate and the perovskite film layers, lithographing and etching the second perovskite film layer and the third perovskite film layer to form a top electrode and a capacitor dielectric layer, and lithographing and etching the first perovskite film layer to form a bottom electrode.

[0007] So that the above-listed features of the present disclosure can be understood in detail, a more particular description of the present disclosure can be had by reference to embodiments, some of which are illustrated in the attached drawings, which should, however, be noted that the attached drawings represent only exemplary embodiments, and therefore should not be considered as limiting the scope of the present disclosure, which may embrace other embodiments that are equally effective. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic diagram of a cluster processing system according to an embodiment. [Diagram 2] 1 is a flow diagram of a method of manufacturing a perovskite film device according to an embodiment. [Diagram 3] 1 is a schematic diagram of a multi-cathode processing chamber according to an embodiment. [Figure 4] 1 is a flow diagram of a method of manufacturing a perovskite film device according to an embodiment. [Figure 5A] FIG. 1 is a schematic side view of a perovskite film device according to an embodiment. [Figure 5B] FIG. 1 is a schematic top view of a perovskite film device according to an embodiment. [Figure 6] 1 is a flow diagram of a method of manufacturing a perovskite film device according to an embodiment. [Figure 7A] 1A-1D are schematic cross-sectional views of a substrate during a method of manufacturing a perovskite film device according to an embodiment. [Figure 7B] 1A-1D are schematic cross-sectional views of a substrate during a method of manufacturing a perovskite film device according to an embodiment. [Figure 7C] 1A-1D are schematic cross-sectional views of a substrate during a method of manufacturing a perovskite film device according to an embodiment. [Figure 7D] 1A-1D are schematic cross-sectional views of a substrate during a method of manufacturing a perovskite film device according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] For ease of understanding, wherever possible, like reference numerals have been used to designate like elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without additional description.

[0010] SUMMARY OF THE DISCLOSURE Embodiments of the present disclosure generally relate to an apparatus and method for depositing perovskite films. More particularly, embodiments described herein relate to deposition of perovskite films to form a perovskite film device. The method includes depositing a first perovskite film layer on a surface of a substrate using multi-cathode sputtering deposition in a process chamber. Depositing a second perovskite film layer on the first perovskite film layer using multi-cathode sputtering deposition in the process chamber. Annealing the first perovskite film layer and the second perovskite film layer to promote crystallinity of the resulting perovskite film device. The first perovskite film layer includes a first perovskite material. The second perovskite film layer includes a second perovskite material.

[0011] 1 is a schematic diagram of a cluster processing system 100. The cluster processing system 100 includes a processing platform 104, a factory interface 102, and a system controller 144. The processing platform 104 includes a plurality of processing chambers 103, 105, 107, 109, 110, 111, 112, and at least one load lock chamber 122 coupled to a vacuum substrate transfer chamber. In one embodiment, the cluster processing system 100 includes one or more vacuum substrate transfer chambers, such as a first transfer chamber 136A and a second transfer chamber 136B. In one embodiment, the cluster processing system 100 includes seven processing chambers 103, 105, 107, 109, 110, 111, 112. In other embodiments, other quantities of processing chambers may be utilized. In one embodiment, the cluster processing system 100 includes two load lock chambers 122. In other embodiments, more or fewer load lock chambers 122 may be utilized.

[0012] In one embodiment, the factory interface 102 includes at least one docking station 108 and at least one factory interface robot 114 to facilitate transfer of substrates. The docking station 108 is configured to receive one or more Front Opening Unified Pods (FOUPs) 106A, 106B. In other embodiments, more than two or less than one FOUP may be utilized. The factory interface robot 114, having a first blade 116 disposed at one end of the robot 114, is configured to transfer substrates from the factory interface 102 through a load lock chamber 122 to the processing platform 104 for processing.

[0013] Each of the load lock chambers 122 has a first port coupled to the factory interface 102 and a second port coupled to the first transfer chamber 136A. To facilitate the transfer of substrates between the vacuum environment of the first transfer chamber 136A and the substantially ambient (e.g., atmospheric) environment of the factory interface 102, the load lock chambers 122 are coupled to a pressure control system that pumps and vents the load lock chambers 122. The load lock chambers 122 are operable to heat and degas the substrate. Heating and degassing the substrate removes impurities and contaminants from the surface of the substrate.

[0014] In one embodiment of the cluster processing system 100, the cluster processing system 100 may include one or more processing chambers 103, 105, 107, 109, 110, 111, 112. The processing chambers 103, 105, 107, 109, 110, 111, 112 may be deposition chambers (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD) chambers or other deposition chambers), annealing chambers (e.g., high pressure annealing chambers, rapid thermal processing (RTP) chambers or laser annealing chambers), etch chambers, cleaning chambers, pre-cleaning chambers, curing chambers, lithography exposure chambers, or other similar types of semiconductor processing chambers. In one embodiment, the processing chambers 103, 105, 107, 109, 110, 111, 112 may be deposition chambers for sputtering a film formed from a perovskite material. The cluster processing system 100 can perform single layer perovskite film deposition or multi-layer perovskite film stack deposition in the processing chambers 103, 105, 107, 109, 110, 111, 112 to produce perovskite film devices such as ferroelectric perovskite capacitors. Perovskite materials are generally crystalline materials with a particular crystal structure ABX3, where "A" and "B" are two types of ions, often of different sizes, and X is an ion (often an oxide ion) that bonds to both ions. The "A" atoms are generally larger than the "B" atoms.

[0015] In an embodiment, the processing chambers 103, 105, 107, 109, 110, 111, 112 may be additional material deposition chambers or other chambers that allow interface processing, interface layer deposition, and multilayer film stack deposition. To facilitate measuring material properties of the perovskite film disposed on the substrate without removing the substrate from the processing platform 104, in some embodiments, one or more on-board metrology stations 118 are disposed within the processing platform 104. The cluster processing system 100 may further include facets for connecting additional chambers for one or more of interface processing, interface layer deposition, and multilayer film stack deposition to the cluster processing system 100. In some embodiments, one or more annealing chambers 124 may be disposed within the load lock chamber 122. The annealing chamber 124 may be one of a high pressure annealing chamber, an RTP chamber, or a laser annealing chamber.

[0016] The first transfer chamber 136A has a first vacuum robot 130A disposed therein. The vacuum robot 130A has a blade 134A capable of transferring substrates between the load lock chamber 122, the on-board metrology station 118, and the processing chambers 103, 105, 107, 109, 110, 111, 112. In some embodiments, the processing platform 104 includes a second transfer chamber 136B. The second transfer chamber 136B has a second robot 130B disposed therein. The second robot 130B has a second blade 134B capable of transferring substrates between the on-board metrology station 118, the processing chambers 105, 107, 109, 110, 111, and the first transfer chamber 136A.

[0017] A system controller 144 is coupled to the cluster processing system 100. The system controller 144 may include or be included in the computing device 101 and controls the operation of the cluster processing system 100 using direct control of the process chambers 103, 105, 107, 109, 110, 111, 112 of the cluster processing system 100. Alternatively, the system controller 144 may control the process chambers 103, 105, 107, 109, 110, 111, 112 and the computer(s) associated with the cluster processing system 100. During operation, the system controller 144 also enables data collection and feedback from each chamber to optimize performance of the cluster processing system 100.

[0018] The system controller 144 typically includes a central processing unit 138, a memory 140, and support circuits 142. The CPU 138 may be one or any form of general-purpose computer processor that can be used in an industrial environment. The support circuits 142 are conventionally coupled to the CPU 138 and may include cache, clock circuits, input / output subsystems, power supplies, and the like. The processes may typically be stored in the memory 140 of the system controller 144 as software routines that, when executed by the CPU 138, cause the process chamber to perform the processes of the present disclosure. The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the cluster processing system 100. Also, some or all of the methods of the present disclosure may be performed in hardware. Thus, the processes may be implemented in software and executed in hardware using a computer system, for example, as an application specific integrated circuit or other type of hardware embodiment, or as a combination of software and hardware.

[0019] 2 is a flow diagram of a method 200 for fabricating a perovskite film device. In operation 201, a substrate is placed in the cluster processing system 100 for processing. The substrate is placed in one or more front-opening unified pods (FOUPs) 106A, 106B. A blade 116 located at one end of a robot 114 is used to transport the substrate from the one or more FOUPs 106A, 106B into a load lock chamber 122 of the processing platform 104.

[0020] In operation 202, the substrate is heated and degassed in the load lock chamber 122. By heating the substrate and degassing the substrate, impurities and contaminants may be removed from the load lock chamber 122 and the surface of the substrate. The impurities and contaminants may interfere with the perovskite film deposition process. Thus, the removal of the impurities and contaminants helps to facilitate the perovskite film deposition process. In some embodiments, the load lock chamber 122 includes an annealing chamber 124. The annealing chamber 124 may be one of a high pressure annealing chamber, an RTP chamber, or a laser annealing chamber. The annealing chamber 124 may be operable to heat the substrate to remove impurities and contaminants.

[0021] In operation 203, the substrate is transported into one of the plurality of processing chambers 103, 105, 107, 109, 110, 111, 112 for processing. The substrate is transported from the load lock chamber 122 to the processing chamber 103, 105, 107, 109, 110, 111, 112 through the first transfer chamber 136A or the second transfer chamber 136B. The first transfer chamber 136A includes a first vacuum robot 130A having a first blade 134A capable of transferring the substrate between the load lock chamber 122, the processing chambers 103, 105, 107, 109, 110, 111, 112, and the on-board metrology station 118. In some embodiments, the processing platform 104 includes a second transfer chamber 136B. The second transfer chamber 136B has a second robot 130B disposed therein. The second robot 130B has a second blade 134B that is capable of transferring substrates between the on-board metrology station 118, the processing chambers 105, 107, 109, 110, 111 and the first transfer chamber 136A.

[0022] In some embodiments, the processing chambers 103, 105, 107, 109, 110, 111, 112 may be deposition chambers (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD) chambers or other deposition chambers), annealing chambers (e.g., high pressure annealing chambers, rapid thermal processing (RTP) chambers or laser annealing chambers), etch chambers, cleaning chambers, pre-cleaning chambers, curing chambers, lithography exposure chambers, or other similar types of semiconductor processing chambers. In other embodiments, the processing chambers may be additional material deposition chambers or other chambers that enable interface processing, interface layer deposition and multilayer film stack deposition.

[0023] In operation 204, a perovskite film is sputtered onto the surface of the substrate in one of the process chambers 103, 105, 107, 109, 110, 111, 112. The perovskite film is deposited using method 400 or method 600, described in more detail herein. In some embodiments, a single layer of the perovskite film is deposited onto the surface of the substrate. In other embodiments, a multi-layer perovskite thin film stack is deposited onto the surface of the substrate. The multi-layer perovskite thin film stack can have any integer number of layers deposited onto the surface of the substrate.

[0024] In optional operation 205, the perovskite film disposed on the substrate is measured at the on-board metrology station 118. The substrate is transported to the on-board metrology station 118. The substrate is transported to the on-board metrology station 118 using either the first blade 134A of the first vacuum robot or the second blade of the second vacuum robot depending on which process chamber 103, 105, 107, 109, 110, 111, 112 is being used. The on-board metrology station 118 monitors material properties of the perovskite film, such as thickness and stoichiometric composition of the perovskite film.

[0025] In optional operation 206, the substrate is further processed in one of the processing chambers 103, 105, 107, 109, 110, 111, 112. The substrate is transported back to one of the processing chambers 103, 105, 107, 109, 110, 111, 112 using the first blade 134A of the first vacuum robot or the second blade of the second vacuum robot depending on which processing chamber 103, 105, 107, 109, 110, 111, 112 is being used. In some embodiments, additional perovskite films may be deposited. In other embodiments, other types of deposition (e.g., PVD, CVD, ALD) may be performed. In still other embodiments, etching, cleaning, pre-cleaning, curing, lithography or other similar types of semiconductor processing may be performed.

[0026] Optional operations 205-206 may be performed one or several times depending on the desired perovskite film and the resulting desired perovskite film device.

[0027] In operation 207, the perovskite film disposed on the substrate is annealed in the annealing chamber 124 to form a perovskite film device. The substrate is transported to the annealing chamber 124 in the load lock chamber 122 using the first blade 134A of the first vacuum robot or the second blade of the second vacuum robot depending on which processing chamber 103, 105, 107, 109, 110, 111, 112 is being used. In one embodiment, the annealing is performed at controlled ambient conditions. The annealing is performed at a controlled temperature ramp rate in the load lock chamber 122. Annealing the perovskite film disposed on the substrate promotes crystallinity of the perovskite film device.

[0028] In operation 208, the perovskite film device is measured at the on-board metrology station 118. The first blade 134A of the first vacuum robot is used to transport the substrate to the on-board metrology station 118. The on-board metrology station 118 monitors the thickness and stoichiometric composition of the perovskite film device.

[0029] In operation 209, the perovskite film device is transported from the on-board metrology station 118 through the load lock chamber 122 to one or more FOUPs 106A, 106B and removed from the cluster processing system 100. Depending on which processing chamber 103, 105, 107, 109, 110, 111, 112 is being used, the first blade 134A of the first vacuum robot or the second blade of the second vacuum robot is used to transport the perovskite film device to the load lock chamber 122. The substrate is transported through the load lock chamber 122 to one or more FOUPs 106A, 106B using a blade 116 located at one end of the robot 114.

[0030] 3 is a schematic diagram of a multi-cathode processing chamber 300. The multi-cathode processing chamber 300 can be used in place of any of the one or more of the processing chambers 103, 105, 107, 109, 110, 111, and 112. The multi-cathode chamber 300 includes a plurality of cathodes having corresponding targets attached to a chamber body adapter 308. In the illustrated embodiment, the multi-cathode chamber 300 has a first target 304 and a second target 306. In other embodiments, the multi-cathode chamber 300 may have more than two targets or less than one target. In one embodiment, the first cathode is an RF cathode 302A corresponding to the first target 304. The second cathode is a DC (e.g., pulsed-DC or p-DC) cathode 302B corresponding to the second target 306. In some embodiments, the targets 304, 306 may be metal targets or may be dielectric targets. In some embodiments, the first target 304 may be formed of a metal such as lanthanum (La), bismuth (Bi), iron (Fe), or a combination thereof. The second target 306 may be formed of a metal such as strontium (Sr), ruthenium (Ru), lanthanum (La), manganese (Mn), or a combination of both. However, other metals and / or conductive metal oxides may be used instead. The processing chamber includes a substrate support 332 having a support surface 334 for supporting a substrate 336. The process chamber 300 includes an opening 350 (e.g., a slit valve) through which an end effector may extend to place the substrate 336 on lift pins for lowering the substrate 336 to the support surface 334.

[0031] Each target 304, 306 is disposed at a predetermined angle α relative to the support surface 334. In some embodiments, the angle α relative to the support surface 334. In some embodiments, the angle α may be between about 0° and about 50°. The substrate support 332 includes a bias source 338 coupled via a matching network 342 to a bias electrode 340 disposed within the substrate support 332. The bias electrode 340 applies a potential to the substrate to create a potential difference between the RF cathode 302A and the DC cathode 302B, thus facilitating the deposition process. In some embodiments, the substrate support 332 further includes a heater and an electrostatic clamp / chuck (ESC) component. The heater is utilized to heat the substrate 336 during processing of the substrate 336. Heating the substrate 336 facilitates deposition of the perovskite material on the substrate 336. The ESC is used to chuck the substrate 336 and secure the substrate 336 to the substrate support 332 during the deposition process. The chamber body adapter 308 is coupled to the top of the chamber body 310 of the process chamber 300. The chamber body adapter 308 is grounded. In some embodiments, each target 304, 306 has an associated magnetron. An RF power source 314 is coupled to the RF cathode 302A through an RF matching network 315. In the past, it has been difficult to provide an accurate amount of power to an RF capacitor. The RF matching network 315 allows for better delivery of RF power to the RF cathode 302A during perovskite film deposition. Using the RF matching network 315, the impedance and capacitance of the RF power source 314 can be controlled to allow for an accurate amount of power to be delivered to the first target 304. A DC power source 312 is coupled to the DC cathode 302B. In some embodiments, the DC power source 312 is coupled to the DC cathode 302B through a DC matching network. The DC power source has a power range of about 400 watts to about 1500 watts.

[0032] A shield 316 is rotatably coupled to the chamber body adapter 308. Depending on the number of targets used to simultaneously sputter materials, the rotating shield 316 can have one or more openings 318 for exposing the corresponding target or targets. The shield 316 limits or eliminates cross-contamination between the multiple targets. For example, in some embodiments where five cathodes are provided, the shield may include at least one opening 318 for exposing the first target 304 for sputtering onto the substrate 336 and at least one pocket 320 for receiving the second target 306 to prevent sputtering. The shield 316 is rotatably coupled to the chamber body adapter 308 via a shaft 322.

[0033] An actuator 324 is coupled to the shaft 322 on the side opposite the shield 316. The actuator 324 is configured to rotate the shield 316, as indicated by arrow 326, and to move the shield 316 up or down, as indicated by arrow 328, along a central axis 330 of the process chamber 300. The actuator 324 is further configured to rotate the substrate support 332. This rotation of the substrate support 332 allows material being deposited from the targets 304, 306 to be uniformly deposited across the substrate 333. The actuator 324 can be used to adjust the substrate rotation speed.

[0034] In some embodiments, the shield 316 may include a pocket 320 for receiving a non-sputtered target. The pocket 320 prevents scattering of the sputtered target from depositing on the non-sputtered target. While such scattering is unavoidable, the pocket 320 ensures that scattering does not contaminate the sputtered surface of the non-sputtered target. As a result, contamination of the non-sputtered target is further reduced.

[0035] In some embodiments, the shield 316 has two openings and at least two target materials, allowing for simultaneous sputtering of multiple target materials. For example, the process chamber includes at least three targets, a first target 304 and a third target (not shown) having the same material, and a second target 306 having a different material. The shield 316 includes two openings 318 for exposing the first target 304 and the third target. Exposing the substrate 336 to two targets having the same material increased the amount of material deposited on the substrate 336. This allows for better control of the ratio of the elements being deposited and stoichiometric composition adjustment. In another embodiment, the shield 316 includes two openings 318 for exposing the first target 304 and the second target 306. Exposing the substrate 336 to two targets having different materials allows for adjustment of the stoichiometric composition of the perovskite film. Having the correct ratio and stoichiometric composition of the elements can promote the crystallinity of the resulting perovskite film.

[0036] To improve grounding of the shield 316 to the grounded chamber body adapter 308 when the shield 316 is in the retracted position, in some embodiments, the process chamber 300 includes a plurality of ground rings 344. The ground rings 344 prevent the shield 316 from charging by minimizing the energy between the plasma and the shield 316. As a result, the likelihood of the shield 316 being sputtered is further reduced.

[0037] In some embodiments, the process chamber 300 further includes a process gas source 346 for supplying a predetermined process gas to the interior volume 305 of the process chamber 300. The process chamber 300 may further include an exhaust pump 348 fluidly coupled to the interior volume 305 for exhausting the process gas from the process chamber 300. In some embodiments, the process gas source may supply a process gas to the interior volume 305 after sputtering the targets 304, 306. The process gas may include oxygen (O2), argon (Ar), krypton (Kr), or neon (Ne). The process gas is used to precondition the process chamber in preparation for the deposition process.

[0038] The exhaust pump 348 is further configured to control the concentration and pressure of the process gas in the chamber. The exhaust pump 348 further allows for adjusting the stoichiometric composition by varying the concentration and pressure of the process gas in the internal volume 305 of the process chamber 300. Controlling the pressure in the process chamber 300 promotes the crystallinity of the perovskite material. The exhaust pump 348 automatically monitors and adjusts the pressure in the process chamber 300 to meet the pressure conditions necessary to promote the crystallinity of the perovskite material.

[0039] 4 is a flow diagram of a method 400 for manufacturing a perovskite film according to an embodiment. Method 400 may be performed in operation 204 of method 200.

[0040] In operation 401, a substrate 336 is placed on a substrate support 332 in a multi-cathode processing chamber 300. The multi-cathode processing chamber 300 can be used in place of any one or more of the processing chambers 103, 105, 107, 109, 110, 111, and 112. The substrate 336 is transported into the multi-cathode processing chamber 300 using one of the vacuum robots, a first vacuum robot 130A having a first blade 134A in a first transfer chamber 136A or a second vacuum robot 130B having a second blade 134B in a second transfer chamber 136B. In one embodiment, the substrate 336 is chucked to the substrate support 332 (e.g., placed on or fixed to the substrate support 332) using an electrostatic semiconductor clamp / chuck (ESC) component. In some embodiments, the substrate support 332 includes a heater for heating the substrate for processing. In some embodiments, the substrate support 332 is coupled to an actuator 324 for rotating the substrate support 332 , which in turn rotates the substrate 336 .

[0041] In operation 402, the multi-cathode processing chamber 300 is preconditioned using a first process gas flow. The process gas may include one of oxygen (O2), argon (Ar), krypton (Kr), or neon (Ne). The process gas is pumped into the interior volume 305 of the multi-cathode processing chamber 300 via a process gas source 346. An exhaust pump 348 is fluidly coupled to the multi-cathode processing chamber 300 to evacuate the process gas from the interior volume 305.

[0042] In operation 403, a first perovskite material layer is deposited on the surface of the substrate 336 using a first deposition gas flow. The first deposition gas flow includes a process gas, which may include one of oxygen (O2), argon (Ar), krypton (Kr), or neon (Ne). The first deposition gas flow is about 0.1 mTorr to about 5 mTorr. The first deposition gas flow has an oxygen concentration of about 0% to about 10%. The perovskite material is disposed by sputtering deposition from one or more targets (e.g., a first target 304 and a second target 306). In one embodiment, the first target 304 is coupled to an RF cathode 302A and the second target 306 is coupled to a DC / p-DC cathode 302B. In some embodiments, the targets 304, 306 may be metal targets or may be dielectric targets. In some embodiments, the first target 304 may be formed of a metal such as lanthanum (La), bismuth (Bi), iron (Fe), or a combination thereof. The second target 306 may be formed of a metal such as strontium (Sr), ruthenium (Ru), lanthanum (La), manganese (Mn), or a combination of both. However, other metals and / or conductive metal oxides may be used instead. In one embodiment, the first perovskite material layer is strontium ruthenium oxide or lanthanum strontium manganese oxide. In another embodiment, the first perovskite material layer is lanthanum bismuth iron oxide.

[0043] In one embodiment, the first perovskite material layer is deposited using single sputtering (e.g., the first target 304 or the second target 306). A shield 316 including an aperture 318 is rotatably coupled to a chamber body adapter 308 of the multi-cathode processing chamber 300. To deposit the first perovskite material layer, an actuator 324 can be used to selectively rotate the aperture 318 between one or more targets, for example, between the first target 304 and the second target 306. For example, as shown in FIG. 3, the aperture 318 can be selectively rotated to the first target 304 to expose the first target 304 to the substrate 336, while the second target 306 is housed in a pocket 320 of the shield 316 and is not exposed to the substrate 336. The first target 304, exposed to the substrate 336 by the opening 318, allows the first target 304 to deposit (e.g., sputter) material onto the substrate 336, while the shield 316 prevents the second target 306 from depositing (e.g., sputtering) material onto the substrate 336.

[0044] In another embodiment, the first perovskite material layer is deposited using multi-source sputtering with two or more targets (e.g., a first target 304 and a second target 306). The shield 316 may include two or more openings 318 that can be selectively rotated between the two or more targets, e.g., between the first target 304 and the second target 306. For example, the process chamber may have three or more targets, e.g., the first target 304, the second target 306, and a third target (not shown). The shield 316 may be selectively rotated such that the first and second shield openings expose the first and second targets 304 and 306 to the substrate, while the third target is housed in a pocket 320 of the shield 316 and is not exposed to the substrate. The first target 304 and the second target 306 exposed to the substrate 336 by the openings allow the first target 304 and the second target 306 to deposit (e.g., sputter) material onto the substrate 336 while the shield 316 prevents the third target from depositing (sputtering) material onto the substrate. In some embodiments, this co-sputtering technique may include one or more targets sputtering the same material. In other embodiments, this co-sputtering may include each target containing a different material than the other targets. The ability to co-sputter two or more targets allows for greater control of the stoichiometric composition of the deposited perovskite film. This greater control of the stoichiometric composition of the deposited perovskite film increases the crystallinity of the resulting perovskite film device. For example, a second target may be used to improve the overall composition of the entire substrate. For example, if a particular element / molecule in the desired perovskite film is poorly deposited across the substrate, a co-sputtering target of that element / molecule may be utilized to increase the composition of that particular element.Additionally, if a particular element / molecule in a desired film is poorly deposited at a particular location across the substrate, a co-sputtering target of that element / molecule may be utilized to increase the composition of that element / molecule at that particular location on the substrate.

[0045] In some embodiments, the actuator 324 may rotate the substrate support during single or multiple sputtering to promote uniform deposition of the targets 304, 306. The actuator 324 may rotate the substrate support at between about 5 rpm and about 90 rpm.

[0046] In optional operation 404, material properties of the first layer perovskite material may be measured in the on-board metrology station 118. The substrate 336 with the first perovskite material layer disposed thereon may be transported to the on-board metrology station 118 in the processing platform 104 of the cluster processing system 100. In one embodiment, the processing platform 104 is a vacuum-tight processing platform. The on-board metrology station 118 may be used to monitor the thickness, stoichiometry and / or crystallinity of the first perovskite material layer.

[0047] In optional operation 405, the cathode and processing parameters of the multi-cathode processing chamber 300 are changed. This change in the processing parameters of the processing chamber includes changing the process position (e.g., the height of the substrate support within the multi-cathode processing chamber 300), gas flow rates, and the rotation speed of the substrate support.

[0048] In optional operation 406, the process chamber 300 is preconditioned with a second process gas flow. The process gas may include one of oxygen (O2), argon (Ar), krypton (Kr), or neon (Ne). The process gas is pumped into the interior volume 305 of the multi-cathode processing chamber 300 via a process gas source 346. An exhaust pump 348 is fluidly coupled to the multi-cathode processing chamber 300 for exhausting the process gas from the interior volume 305.

[0049] In optional operation 407, a second deposition gas flow is used to deposit a second perovskite material layer. The second deposition gas flow includes a process gas, which may include one of oxygen (O2), argon (Ar), krypton (Kr), or neon (Ne). The second deposition gas flow is about 0.1 mTorr to about 5 mTorr. The second deposition gas flow has an oxygen concentration of about 0% to about 10%. In some embodiments, the second deposition gas flow is different from the first deposition gas flow. The perovskite material is disposed by sputtering deposition from one or more targets (e.g., the first target 304 and the second target 306). In one embodiment, the first target 304 is coupled to the RF cathode 302A and the second target 306 is coupled to the DC / p-DC cathode 302B. In some embodiments, the targets 304, 306 may be metal targets or may be dielectric targets. In some embodiments, the first target 304 may be formed of a metal such as lanthanum (La), bismuth (Bi), iron (Fe), or a combination thereof. The second target 306 may be formed of a metal such as strontium (Sr), ruthenium (Ru), lanthanum (La), manganese (Mn), or a combination of both. However, other metals and / or conductive metal oxides may be used instead. In one embodiment, the second perovskite material layer is strontium ruthenium oxide or lanthanum strontium manganese oxide. In another embodiment, the second perovskite material layer is lanthanum bismuth iron oxide.

[0050] In one embodiment, the second perovskite material layer is deposited using single sputtering (e.g., the first target 304 or the second target 306). A shield 316 including an aperture 318 is rotatably coupled to a chamber body adapter 308 of the multi-cathode processing chamber 300. To deposit the first perovskite material layer, an actuator 324 can be used to selectively rotate the aperture 318 between one or more targets, for example, between the first target 304 and the second target 306. For example, as shown in FIG. 3, the aperture 318 can be selectively rotated to the first target 304 to expose the first target 304 to the substrate 336, while the second target 306 is housed in a pocket 320 of the shield 316 and is not exposed to the substrate 336. The first target 304 exposed to the substrate 336 by the opening 318 allows the first target 304 to deposit (e.g., sputter) material onto the substrate 336 while the shield 316 prevents the second target 306 from depositing (e.g., sputtering) material onto the substrate 336. The use of single-source sputtering reduces system maintenance costs. Additionally, target process drift and the number of particles introduced into the film stack are minimized.

[0051] In another embodiment, the second perovskite material layer is performed using multi-target sputtering with two or more targets (e.g., a first target 304 and a second target 306). The shield 316 may include two or more openings 318 that can be selectively rotated between the two or more targets, e.g., between the first target 304 and the second target 306. For example, the multi-cathode processing chamber 300 may have three or more targets, e.g., a first target 304, a second target 306, and a third target (not shown). The shield 316 may be selectively rotated such that the first shield opening and the second shield opening expose the first target 304 and the second target 306 to the substrate 336, while the third target is housed in a pocket 320 of the shield 316 and is not exposed to the substrate 336. The first target 304 and the second target 306 exposed to the substrate 336 by the openings allow the first target 304 and the second target 306 to deposit (e.g., co-sputter) material onto the substrate 336 while the shield 316 prevents the third target from depositing (sputtering) material onto the substrate 336. In some embodiments, this co-sputtering technique may include one or more targets sputtering the same material. In other embodiments, this co-sputtering may include each target containing a different material than the other targets. The ability to co-sputter two or more targets allows for greater control of the stoichiometric composition of the deposited perovskite film. This greater control of the stoichiometric composition of the deposited perovskite film increases the crystallinity of the resulting perovskite film device. For example, a second target may be used to improve the overall composition of the entire substrate. For example, if a particular element / molecule in the desired perovskite film is poorly deposited across the substrate, a co-sputtering target of that element / molecule may be utilized to increase the composition of that particular element.Additionally, if a particular element / molecule in a desired film is poorly deposited at a particular location across the substrate, a co-sputtering target of that element / molecule may be utilized to increase the composition of that element / molecule at that particular location on the substrate.

[0052] Optional operations 404-407 may be performed one or more times depending on the desired number of perovskite film layers and the resulting desired perovskite film device.

[0053] FIG. 5A is a schematic side view of a perovskite film device 500 according to an embodiment. FIG. 5B is a schematic top view of a perovskite film device 500 according to an embodiment. The perovskite film device 500 includes devices such as a ferroelectric perovskite capacitor, a piezoelectric microactuator, or a magnetic sensor. The ferroelectric perovskite capacitor has ferroelectric properties that result in a more efficient memory function. The perovskite film device 500 includes a substrate 501, a seed layer 502, a first perovskite film layer 503, a second perovskite film layer 504, and a third perovskite film layer 505. In an embodiment, the substrate 501 can be a silicon substrate, a silicon germanium substrate, a complementary metal oxide semiconductor (CMOS), glass, or sapphire. In an embodiment, the substrate 501 includes a plurality of transistors for use in a capacitor.

[0054] The seed layer 502 is disposed on the substrate 501. In one embodiment, the seed layer 502 comprises a material such as magnesium oxide (MgO), titanium nitride (TiN), SrTiO3 or platinum (Pt). The seed layer 502 is configured to bridge between the substrate 501 and the perovskite film layers 503, 504 and 505 to provide electrical connection between the transistors in the substrate 501 and the perovskite film layers 503, 504 and 505. In some embodiments, the seed layer 502 may further help promote crystallinity of the perovskite film layers 503, 504 and 505.

[0055] A first perovskite film layer 503 is disposed on the seed layer 502. In one embodiment, the first perovskite film layer 503 is strontium ruthenium oxide or lanthanum strontium manganese oxide.

[0056] A second perovskite film layer 504 is disposed on the first perovskite film layer 503. In one embodiment, the second perovskite film layer 504 is lanthanum bismuth iron oxide.

[0057] A third perovskite film layer 505 is disposed on the first perovskite film layer 503. In one embodiment, the third perovskite film layer 505 is strontium ruthenium oxide or lanthanum strontium manganese oxide. The first perovskite film layer 503 and the third perovskite film layer 505 are configured to promote crystallinity of the second perovskite film layer 504 to enhance the ferroelectric properties of the perovskite film layers 503, 504 and 505.

[0058] Figure 6 is a flow diagram of a method of manufacturing a perovskite film device 500. Figures 7A-7D are schematic cross-sectional views of a substrate 501 during a method of manufacturing a perovskite film device 500. Method 600 may be performed in operation 204 of method 200.

[0059] In operation 601, a seed layer 502 is disposed on a substrate 501, as shown in FIG. 7A. The seed layer 502 is disposed on the substrate in a process chamber, such as the multi-cathode process chamber 300. The multi-cathode process chamber 300 can be used in place of any of the one or more process chambers 103, 105, 107, 109, 110, 111, and 112. The seed layer 502 is disposed on the substrate 501 using electroless plating, electrochemical deposition, PVD, plasma enhanced chemical vapor deposition (PECVD), CVD, ALD, or other deposition methods. The seed layer 502 includes a material, such as magnesium oxide (MgO), titanium nitride (TiN), SrTiO3, or platinum (Pt). The seed layer 502 is configured to bridge between the substrate 501 and the perovskite film layers 503, 504 and 505 to provide electrical connection between the transistors in the substrate 501 and the perovskite film layers 503, 504 and 505. In some embodiments, the seed layer 502 may also help promote crystallinity of the perovskite film layers 503, 504 and 505.

[0060] In optional operation 602, the substrate 501 having the seed layer 502 disposed thereon is transported from one of the processing chambers 103, 105, 107, 109, 110, 111, 112 to another of the processing chambers 103, 105, 107, 109, 110, 111, 112 to change the type of processing being performed in the processing chamber. The substrate 501 may be transported from one processing chamber 103, 105, 107, 109, 110, 111, 112 to another processing chamber 103, 105, 107, 109, 110, 111, 112 using either a first vacuum robot 130A having a first blade 134A in a first transfer chamber 136A of the cluster processing system 100 or a second vacuum robot 130B having a second blade 134B in a second transfer chamber 136B.

[0061] In operation 603, as shown in FIG. 7B, a first deposition gas flow is used to deposit a first perovskite film layer 503 on the seed layer 502. The first deposition gas flow includes a process gas, which may include one of oxygen (O2), argon (Ar), krypton (Kr), or neon (Ne). The first deposition gas flow is about 0.1 mTorr to about 5 mTorr. The first deposition gas flow has an oxygen concentration of about 0% to about 10%. The first perovskite film layer 503 is deposited by sputtering deposition from one or more targets (e.g., the first target 304 and the second target 306). In one embodiment, the first target 304 is coupled to the RF cathode 302A and the second target 306 is coupled to the DC / p-DC cathode 302B. In some embodiments, the targets 304, 306 may be metal targets or may be dielectric targets. In some embodiments, the first target 304 and the second target 306 may be formed of a metal such as strontium (Sr), ruthenium (Ru), lanthanum (La), manganese (Mn), or a combination of both. In one embodiment, the first perovskite film layer 503 is strontium ruthenium oxide or lanthanum strontium manganese oxide.

[0062] In one embodiment, the first perovskite film layer 503 is deposited using single sputtering (e.g., the first target 304 or the second target 306). The shield 316 includes an aperture 318 rotatably coupled to the chamber body adapter 308 of the multi-cathode processing chamber 300. To deposit the first perovskite film layer 503, the actuator 324 can be used to selectively rotate the aperture 318 between one or more targets, for example, between the first target 304 and the second target 306. For example, as shown in FIG. 3, the aperture 318 can be selectively rotated to the first target 304 to expose the first target 304 to the substrate 336, while the second target 306 is housed in a pocket 320 of the shield 316 and is not exposed to the substrate 501. The first target 304, exposed to the substrate 501 by the opening 318, allows the first target 304 to deposit (e.g., sputter) material onto the substrate 501, while the shield 316 prevents the second target 306 from depositing (e.g., sputtering) material onto the substrate 501.

[0063] In another embodiment, the first perovskite film layer 503 is deposited using multi-source sputtering (e.g., co-sputtering) with two or more targets (e.g., a first target 304 and a second target 306). The shield 316 may include two or more openings 318 that can be selectively rotated between the two or more targets, e.g., between the first target 304 and the second target 306. For example, the multi-cathode processing chamber 300 may have three or more targets, e.g., a first target 304, a second target 306, and a third target (not shown). The shield 316 may be selectively rotated such that the first shield opening and the second shield opening expose the first target 304 and the second target 306 to the substrate, while the third target is housed in a pocket 320 of the shield 316 and is not exposed to the substrate. The first target 304 and the second target 306 exposed to the substrate 501 by the openings allow the first target 304 and the second target 306 to deposit (e.g., sputter) material onto the substrate 501 while the shield 316 prevents the third target from depositing (sputtering) material onto the substrate 501. In some embodiments, this co-sputtering technique may include one or more targets sputtering the same material. In other embodiments, this co-sputtering may include each target including a different material than the other targets. The ability to co-sputter two or more targets allows for greater control of the stoichiometric composition of the deposited perovskite film. This greater control of the stoichiometric composition of the deposited perovskite film increases the crystallinity of the resulting perovskite film device.

[0064] In some embodiments, the actuator 324 may rotate the substrate support during single or multiple sputtering to promote uniform deposition of the targets 304, 306. The actuator 324 may rotate the substrate support at between about 5 rpm and about 90 rpm.

[0065] In an optional operation 604, material properties of the substrate 501 having the first perovskite film layer 503 disposed thereon may be measured at the on-board metrology station 118. The substrate 501 having the first perovskite film layer 503 disposed thereon may be transported from one of the processing chambers 103, 105, 107, 109, 110, 111, 112 to the on-board metrology station 118 using one of the vacuum robots, a first vacuum robot 130A having a first blade 134A in a first transfer chamber 136A of the cluster processing system 100 or a second vacuum robot 130B having a second blade 134B in a second transfer chamber 136B.

[0066] In operation 605, as shown in FIG. 7C, a second deposition gas flow is used to deposit a second perovskite film layer 504 on the first perovskite film layer 503. The second deposition gas flow includes a process gas, which may include one of oxygen (O2), argon (Ar), krypton (Kr), or neon (Ne). The second deposition gas flow is between about 0.1 millitorr and about 5 millitorr. The second deposition gas flow has an oxygen concentration between about 0% and about 10%. In some embodiments, the second deposition gas flow is different from the first deposition gas flow. The second perovskite film layer 504 is deposited by sputtering deposition from one or more targets (e.g., the first target 304 and the second target 306). In one embodiment, the first target 304 is coupled to the RF cathode 302A and the second target 306 is coupled to the DC / p-DC cathode 302B. In some embodiments, the targets 304, 306 may be metal targets or may be dielectric targets. In some embodiments, the first target 304 and the second target 306 may be formed of a metal such as lanthanum (La), bismuth (Bi), iron (Fe) or a combination thereof. In one embodiment, the second perovskite film layer 504 is lanthanum bismuth iron oxide.

[0067] In one embodiment, the second perovskite film layer 504 is deposited using single sputtering (e.g., the first target 304 or the second target 306). The shield 316 includes an opening 318 that is rotatably coupled to the chamber body adapter 308 of the multi-cathode processing chamber 300. To deposit the second perovskite film layer 504, the opening 318 can be selectively rotated between one or more targets, for example, between the first target 304 and the second target 306, using an actuator 324. For example, as shown in FIG. 3, the opening 318 can be selectively rotated to the first target 304 to expose the first target 304 to the substrate 501, while the second target 306 is housed in a pocket 320 of the shield 316 and is not exposed to the substrate 501. The first target 304, exposed to the substrate 501 by the opening 318, allows the first target 304 to deposit (e.g., sputter) material onto the substrate 501, while the shield 316 prevents the second target 306 from depositing (e.g., sputtering) material onto the substrate 501.

[0068] In another embodiment, the second perovskite film layer 504 is deposited using multi-sputtering (e.g., co-sputtering) with two or more targets (e.g., a first target 304 and a second target 306). The shield 316 may include two or more openings 318 that can be selectively rotated between the two or more targets, e.g., between the first target 304 and the second target 306. For example, the processing chamber may have three or more targets, e.g., the first target 304, the second target 306, and a third target (not shown). The shield 316 may be selectively rotated such that the first shield opening and the second shield opening expose the first target 304 and the second target 306 to the substrate 501, while the third target is housed in a pocket 320 of the shield 316 and is not exposed to the substrate 501. The first target 304 and the second target 306 exposed to the substrate 501 by the openings allow the first target 304 and the second target 306 to deposit (e.g., sputter) material onto the substrate 501 while the shield 316 prevents the third target from depositing (sputtering) material onto the substrate 501. In some embodiments, this co-sputtering technique may include one or more targets sputtering the same material. In other embodiments, this co-sputtering may include each target including a different material than the other targets. The ability to co-sputter two or more targets allows for greater control of the stoichiometric composition of the deposited perovskite film. This greater control of the stoichiometric composition of the deposited perovskite film increases the crystallinity of the resulting perovskite film device.

[0069] In an optional operation 606, the material properties of the substrate 501 having the second perovskite film layer 504 disposed thereon may be measured at the on-board metrology station 118. The substrate 501 having the second perovskite film layer 504 disposed thereon may be transported from one of the processing chambers 103, 105, 107, 109, 110, 111, 112 to the on-board metrology station 118 using one of the vacuum robots, the first vacuum robot 130A having the first blade 134A in the first transfer chamber 136A or the second vacuum robot 130B having the second blade 134B in the second transfer chamber 136B of the cluster processing system 100.

[0070] In operation 607, as shown in FIG. 7D, a third deposition gas flow is used to deposit a third perovskite film layer 505 on the second perovskite film layer 504. The third deposition gas flow includes a process gas, which may include one of oxygen (O2), argon (Ar), krypton (Kr), or neon (Ne). The third deposition gas flow is about 0.1 mTorr to about 5 mTorr. The third deposition gas flow has an oxygen concentration of about 0% to about 10%. In some embodiments, the third deposition gas flow is different from the first deposition gas flow and the second deposition gas flow. The third perovskite film layer 505 is deposited by sputtering deposition from one or more targets (e.g., the first target 304 and the second target 306). In one embodiment, the first target 304 is coupled to the RF cathode 302A and the second target 306 is coupled to the DC / p-DC cathode 302B. In some embodiments, the target 304, the target 306 may be a metal target or a dielectric target. In some embodiments, the first target 304 and the second target 306 may be formed of a metal such as strontium (Sr), ruthenium (Ru), lanthanum (La), manganese (Mn) or a combination of both. In one embodiment, the third perovskite film layer 505 is strontium ruthenium oxide or lanthanum strontium manganese oxide.

[0071] In one embodiment, the third perovskite film layer 505 is deposited using single sputtering (e.g., the first target 304 or the second target 306). The shield 316 including the opening 318 is rotatably coupled to the chamber body adaptor 308 of the multi-cathode processing chamber 300. To deposit the third perovskite film layer 505, the actuator 324 can be used to selectively rotate the opening 318 between one or more targets, for example, between the first target 304 and the second target 306. For example, as shown in FIG. 3, the opening 318 can be selectively rotated to the first target 304 to expose the first target 304 to the substrate 501, while the second target 306 is accommodated in a pocket 320 of the shield 316 and is not exposed to the substrate 501. The first target 304, exposed to the substrate 501 by the opening 318, allows the first target 304 to deposit (e.g., sputter) material onto the substrate 501, while the shield 316 prevents the second target 306 from depositing (e.g., sputtering) material onto the substrate 501.

[0072] In another embodiment, the third perovskite film layer 505 is deposited using multi-sputtering (e.g., co-sputtering) with two or more targets (e.g., a first target 304 and a second target 306). The shield 316 may include two or more openings 318 that can be selectively rotated between the two or more targets, e.g., between the first target 304 and the second target 306. For example, the multi-cathode processing chamber 300 may have three or more targets, e.g., the first target 304, the second target 306, and a third target (not shown). The shield 316 may be selectively rotated such that the first shield opening and the second shield opening expose the first target 304 and the second target 306 to the substrate 501, while the third target is housed in a pocket 320 of the shield 316 and is not exposed to the substrate 501. The first target 304 and the second target 306 exposed to the substrate 501 by the openings allow the first target 304 and the second target 306 to deposit (e.g., sputter) material onto the substrate 501 while the shield 316 prevents the third target from depositing (sputtering) material onto the substrate. In some embodiments, this co-sputtering technique may include one or more targets sputtering the same material. In other embodiments, this co-sputtering may include each target including a different material than the other targets. The ability to co-sputter two or more targets allows for greater control of the stoichiometric composition of the deposited perovskite film. This greater control of the stoichiometric composition of the deposited perovskite film increases the crystallinity of the resulting perovskite film device.

[0073] In an optional operation 608, the material properties of the substrate 501 having the third perovskite film layer 505 disposed thereon may be measured at the on-board metrology station 118. The substrate 501 having the third perovskite film layer 505 disposed thereon may be transported from one of the processing chambers 103, 105, 107, 109, 110, 111, 112 to the on-board metrology station 118 using one of the vacuum robots, the first vacuum robot 130A having the first blade 134A in the first transfer chamber 136A or the second vacuum robot 130B having the second blade 134B in the second transfer chamber 136B of the cluster processing system 100.

[0074] In operation 609, the substrate 501 with the seed layer 502, the first perovskite film layer 503, the second perovskite film layer 504 and the third perovskite film layer 505 disposed thereon is annealed to form a perovskite film device 500. The substrate 501 is transported to the annealing chamber 124 in the load lock chamber 122 using the first blade 134A of the first vacuum robot 130A or the second blade 134B of the second vacuum robot 130B depending on which processing chamber 103, 105, 107, 109, 110, 111, 112 is being used. In one embodiment, the annealing is performed at controlled ambient conditions. The annealing is performed at a controlled temperature ramp rate in the load lock chamber 122. Annealing the perovskite film disposed on the substrate promotes crystallinity in the perovskite film device 500.

[0075] In operation 610, the perovskite film device 500 is lithographed and etched. The lithography and etching exposes the second perovskite film layer 504 to create the top electrode and the capacitor dielectric layer. The lithography and etching exposes the first perovskite film layer 503 to create the bottom electrode. The lithography and etching exposes the seed layer 502 to create the electrode for the perovskite film device 500. In some embodiments, the lithography includes a bilayer (photoresist and bottom anti-reflective coating (BARC)) or trilayer (photoresist, BARC and hardmask) that can be used to define the structures to be formed. In some embodiments, the etch may be a chlorine-based, fluorine-based or argon-based reactive ion etch. In other embodiments, a mixture of chlorine, fluorine and argon may be used for the reactive ion etch.

[0076] In summary, a method and processing system for fabricating a perovskite thin film device is presented herein. A multi-cathode deposition chamber is used to deposit the perovskite film layers that form the perovskite thin film device. The multi-cathode deposition allows for better control of the stoichiometric composition of the perovskite film layers and increases the crystallinity of the resulting perovskite film device. The multi-cathode deposition chamber includes one or more targets, one of which is coupled to an RF power source. The impedance and capacitance of the RF power source can be controlled to allow for a precise amount of power to be delivered to the target. The perovskite film layer is annealed to further increase the crystallinity of the resulting perovskite film device. An on-board metrology station in the processing system allows for material properties of the perovskite film device to be measured during processing of the perovskite film layer.

[0077] While the foregoing is directed to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the following claims.

Claims

1. 1. A method of manufacturing a perovskite film device, comprising the steps of: heating and degassing a substrate in a processing system; depositing a perovskite film layer on a surface of the substrate using multi-cathode sputtering deposition in a process chamber; and annealing the substrate having the perovskite film layer disposed thereon; The method includes:

2. 10. The method of claim 1, further comprising measuring a thickness and one or more material properties of the perovskite film layer at an on-board metrology station within the processing system.

3. 10. The method of claim 1 , wherein the processing chamber includes a plurality of targets and a shield, the shield operable to selectively expose one or more of the plurality of targets and selectively prevent one or more of the plurality of targets from sputtering.

4. 4. The method of claim 3, wherein the process chamber comprises a first target and a second target, the first target comprising a first material and the second target comprising a second material, the second material being different from the first material, and the shield exposes the first target and the second target during the multi-cathode sputtering deposition.

5. 5. The method of claim 4, wherein the first material comprises one of strontium (Sr), ruthenium (Ru), lanthanum (La), manganese (Mn), or a combination thereof, and the second material comprises one of lanthanum (La), bismuth (Bi), iron (Fe), or a combination thereof.

6. The method of claim 4 , wherein one of the first target or the second target is coupled to an RF cathode and an RF matching network.

7. 5. The method of claim 4, wherein the first material and the second material comprise one of strontium (Sr), ruthenium (Ru), lanthanum (La), manganese (Mn), bismuth (Bi), iron (Fe), or a combination thereof.

8. 4. The method of claim 3, wherein the process chamber comprises a first target and a second target, the first target comprising a first material, the second target comprising a second material, the second material being the same as the first material, and the shield exposes the first target and the second target during the multi-cathode sputtering deposition.

9. 1. A method of manufacturing a perovskite film device, comprising the steps of: heating and degassing a substrate in a processing system; depositing a first perovskite film layer over a surface of the substrate using multi-cathode sputtering deposition in a process chamber, the first perovskite film layer comprising a first perovskite material; depositing a second perovskite film layer on the first perovskite film layer in a process chamber using multi-cathode sputtering deposition, the second perovskite film layer comprising a second perovskite material; and annealing the substrate having the first perovskite film layer and the second perovskite film layer disposed thereon; The method includes:

10. 10. The method of claim 9, further comprising measuring a thickness and one or more material properties of the first and second perovskite film layers at an on-board metrology station within the processing system.

11. 10. The method of claim 9, wherein the second perovskite material is different from the first perovskite material.

12. 12. The method of claim 11, wherein the first perovskite material is one of strontium ruthenium oxide or lanthanum strontium manganese oxide and the second perovskite material is lanthanum bismuth iron oxide.

13. 10. The method of claim 9, wherein the second perovskite material is the same as the first perovskite material.

14. 10. The method of claim 9, further comprising depositing a third perovskite film layer on the second perovskite film layer using multi-cathode sputtering deposition, the third perovskite film layer comprising a third perovskite material.

15. 15. The method of claim 14, wherein the third perovskite material is different from both the first perovskite material and the second perovskite material.

16. 15. The method of claim 14, wherein the third perovskite material is the same as either the first perovskite material or the second perovskite material.

17. 1. A method of manufacturing a perovskite film device, comprising the steps of: depositing a seed layer on a substrate; depositing a first perovskite film layer over the seed layer; depositing a second perovskite film layer over the first perovskite film layer; depositing a third perovskite film layer on the second perovskite film layer; annealing the substrate and the perovskite film layer; lithographically etching the second and third perovskite film layers to form a top electrode and a capacitor dielectric layer; and lithographically etching the first perovskite film layer to form a bottom electrode; The method includes:

18. 18. The method of claim 17, wherein the first and third perovskite film layers comprise one of strontium ruthenium oxide or lanthanum strontium manganese oxide, and the second perovskite film layer comprises lanthanum bismuth iron oxide.

19. 18. The method of claim 17, wherein the first and third perovskite film layers are deposited using co-sputtering from a first target and a second target.

20. 20. The method of claim 19, wherein the first target and the second target comprise one of strontium (Sr), ruthenium (Ru), lanthanum (La), manganese (Mn), bismuth (Bi), iron (Fe), or combinations thereof.

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