Probe with planar non-biased spring element for contacting electronic components, method for making same, and method for using same - Patents.com

Abstract

A probe for making contact between two electronic circuit elements includes a mechanism selected from the group consisting of: (A) at least one first and second distal arms supporting a shunt element that makes electrical connection with at least one standoff while shunting current away from the spring elements of the probe coupling the respective standoffs and supporting the respective distal arms; and (B) both the first and second distal arms supporting respective shunt elements that make electrical connection with at least one respective standoff while shunting current away from the respective spring elements coupling the respective standoffs and supporting the respective distal arms.

Description

[Technical field]

[0001] [Related Applications] This application claims priority to and benefit of the filing date of U.S. patent application Ser. No. 18 / 295,748, filed April 4, 2023, and U.S. Provisional Patent Application No. 63 / 328,677, filed April 7, 2022, the entire disclosures of which are hereby incorporated by reference in their entireties.

[0002] Embodiments of the invention relate to microprobes (e.g., for use in water level testing or socket testing of integrated circuits, or for use in making electrical connections to PCBs or other electronic components), and more particularly to pin-like microprobes (i.e., microprobes having a vertical or longitudinal height that is greater than their width (e.g., in some embodiments, 5 times greater, in other embodiments, 10 times greater, and in still other embodiments, 20 times greater) or button-like probes in which the spring elements have a planar configuration when in an unactuated state. In some embodiments, the microprobes are produced, at least in part, by electrochemical manufacturing methods, and more particularly by multi-layer, multi-material electrochemical manufacturing methods, where in some embodiments, a plurality of probes are used while secured in an array format that includes one or more plates with through holes that engage features on the probes and / or other array retention structures. [Background technology]

[0003] probe Many electrical contact probe and pin configurations have been commercially used or proposed, some of which may qualify as prior art and others of which may not. Such pins, probes, and methods of making are described, for example, in Patent Publication Nos. U.S. 2005-0104609, U.S. 2006-0006888, U.S. 2005-0184748, U.S. 2006-0108678, U.S. 2006-0238209, and in Patent Nos. U.S. 7,640,651, U.S. 7,265,565, U.S. 7,412,767, U.S. 7,273,812, U.S. 10,215,775, and U.S. 11,262,383. Electrochemical manufacturing:

[0004] Electrochemical fabrication techniques for forming three-dimensional structures from multiple adhesive layers have been or are being purchased commercially from Microfabrica® Inc. (formerly MEMGen Corporation) of Van Nuys, Calif., under the process names EFAB and MICA FREEFORM.

[0005] Various electrochemical fabrication techniques are described in US Pat. No. 6,027,630, issued Feb. 22, 2000 to Adam Cohen.

[0006] Another method for forming microstructures using electrochemical fabrication techniques is taught in U.S. Pat. No. 5,190,637 to Henry Guckel, entitled "Formation of Microstructures by Multilevel Deep X-Ray Lithography Using Sacrificial Metal Layers."

[0007] Electrochemical manufacturing provides the capability to form prototype and commercial quantities of small objects, parts, structures, devices, and the like at reasonable cost and in reasonable time. Indeed, electrochemical manufacturing enables the formation of many structures that were previously impossible to produce. Electrochemical manufacturing opens up the possibility for new designs and products in many industrial sectors. Electrochemical manufacturing provides this new capability, and while it is understood that electrochemical manufacturing techniques can be combined with known designs and structures in various fields to produce new structures, specific uses of electrochemical manufacturing provide designs, structures, capabilities, and / or mechanisms that are not known or apparent in view of the state of the art.

[0008] There is a need in various fields for microdevices having improved features, reduced manufacturing times, reduced manufacturing costs, simplified manufacturing processes, greater versatility in device design, improved material choices, improved material properties, more cost-effective and lower risk production of such devices, and / or greater independence between geometric configuration and selected manufacturing process. Summary of the Invention

[0009] It is an object of some embodiments of the invention to provide improved probe arrays comprising probes including compliant elements formed from a plurality of compliant modules that include a planar but non-linear (i.e., not straight) spring configuration (i.e., the spring configuration is not a straight bar with no bends or angles, but has some two-dimensional configuration in the plane of at least one layer that provides a bend or curvature) when in an unactuated state, where the plane of the spring is perpendicular to and provides compliance along the longitudinal axis of the probe, and where the compliant modules are stacked in a continuous manner. A probe with a non-linear spring configuration may provide a linear spring return force or a non-linear return force when actuated.

[0010] In a further aspect of the invention, a probe array includes: (1) a plurality of probes for making contact between two electronic circuit elements, each probe including: (a) (i) at least one relatively stiff standoff having first and second ends spaced apart longitudinally; (ii) at least one first compliant element comprising a two-dimensional substantially planar spring when unbiased, the first compliant element providing compliance in a direction substantially perpendicular to the planar configuration, wherein a first portion of the first compliant element is operatively coupled to the at least one standoff and a second portion of the first compliant element is operatively coupled to a first distal arm that is compliantly movable relative to the standoff, wherein when the first compliant element is unbiased, the first distal arm directly or indirectly secures a first distal end extending longitudinally beyond the first end of the at least one standoff; and (iii) at least one second compliant element comprising a spring. a first compliant element, wherein the second compliant element provides compliance in a direction substantially perpendicular to the planar configuration, wherein a first portion of the second compliant element is operably coupled to the at least one standoff and a second portion of the second compliant element is operably coupled to a second distal arm that is compliantly movable relative to the standoff, wherein when the second compliant element is unbiased, the second distal arm directly or indirectly secures a second distal end that extends longitudinally beyond an end of the second end of the at least one standoff, wherein the first portions of the first and second compliant elements are longitudinally spaced apart from one another, and wherein when at least one of the first and second distal ends is biased towards the other, the second portions of the first and second compliant elements longitudinally move in a manner selected from the group consisting of: (A) moving closer together, and (B) moving further apart;wherein the probe comprises: (A) at least one of the first and second tip arms supports a shunting element that makes electrical connection with at least one standoff while shunting current away from a compliant element coupled to the respective standoff and supporting the respective tip arm, wherein a level of current shunting is selected from the group consisting of: (1) at least 50%, (2) at least 70%, (3) at least 80%, (4) at least 90%, (5) at least 95%, and (6) at least 99%; and (B) the first and second tip arms support a shunting element that makes electrical connection with at least one standoff while shunting current away from a compliant element coupled to the respective standoff and supporting the respective tip arm, wherein a level of current shunting is selected from the group consisting of: (1) at least 50%, (2) at least 70%, (3) at least 80%, (4) at least 90%, (5) at least 95%, and (6) at least 99%. both of the arms support respective shunt elements making electrical connections to at least one respective standoff while shunting current from respective compliant elements coupling the respective standoffs and supporting the respective distal arms, wherein a level of current shunting from each respective spring element is selected from the group consisting of: (1) at least 50%, (2) at least 70%, (3) at least 80%, (4) at least 90%, (5) at least 95%, and (6) at least 99%;

[0011] Many variations of the above-described embodiments of the invention exist and will become apparent to those of ordinary skill in the art upon consideration of the teachings herein.

[0012] Other aspects of the invention will be understood by those skilled in the art upon consideration of the teachings herein. Other aspects of the invention may involve combinations of the aspects described above. These other aspects of the invention may provide various combinations of the aspects presented above, as well as other configurations, structures, functional relationships, and processes not specifically described above but taught by other specific teachings described herein, by the teachings of the specification as a whole, or by teachings incorporated herein by reference. [Brief description of the drawings]

[0013] [Figure 1A]10A-10C generally depict the formation of a first layer of a structure using adhesion mask plating, where a blanket deposition of a second material covers both the deposition locations of the first material and the openings between the first material itself. [Figure 1B] 10A-10C generally depict the formation of a first layer of a structure using adhesion mask plating, where a blanket deposition of a second material covers both the deposition locations of the first material and the openings between the first material itself. [Figure 1C] 10A-10C generally depict the formation of a first layer of a structure using adhesion mask plating, where a blanket deposition of a second material covers both the deposition locations of the first material and the openings between the first material itself. [Figure 1D] 10A-10C generally depict the formation of a first layer of a structure using adhesion mask plating, where a blanket deposition of a second material covers both the deposition locations of the first material and the openings between the first material itself. [Figure 1E] 10A-10C generally depict the formation of a first layer of a structure using adhesion mask plating, where a blanket deposition of a second material covers both the deposition locations of the first material and the openings between the first material itself. [Figure 1F] 10A-10C generally depict the formation of a first layer of a structure using adhesion mask plating, where a blanket deposition of a second material covers both the deposition locations of the first material and the openings between the first material itself.

[0014] [Figure 1G] 1 depicts the completion of formation of the first layer resulting in planarization of the deposited material to a desired level.

[0015] [Figure 1H] 1 depicts the state of the process after formation of multiple layers of the structure. [Figure 1I] 1 depicts the state of the process after release of the structure from the sacrificial material.

[0016] [Diagram 2]1 depicts an isometric view of an exemplary spring or compliant module having two connected spring elements, a base, and a connecting support or standoff that can be used in or as a probe.

[0017] [Diagram 3] 1 depicts an isometric view of a second exemplary spring or compliant module that may be used in or as a probe similar to the module of FIG. 2, except that the two spring elements are thicker and therefore provide a greater spring constant than the element of FIG.

[0018] [Figure 4A] Various views are provided of a probe according to another embodiment of the present invention, where the probe is formed from two back-to-back modules that share a common base having an annular configuration that also functions as a standoff. [Figure 4B1] Various views are provided of a probe according to another embodiment of the present invention, where the probe is formed from two back-to-back modules that share a common base having an annular configuration that also functions as a standoff. [Figure 4B2] Various views are provided of a probe according to another embodiment of the present invention, where the probe is formed from two back-to-back modules that share a common base having an annular configuration that also functions as a standoff. [Figure 4C1] Various views are provided of a probe according to another embodiment of the present invention, where the probe is formed from two back-to-back modules that share a common base having an annular configuration that also functions as a standoff. [Figure 4C2] Various views are provided of a probe according to another embodiment of the present invention, where the probe is formed from two back-to-back modules that share a common base having an annular configuration that also functions as a standoff. [Figure 4D1]Various views are provided of a probe according to another embodiment of the present invention, where the probe is formed from two back-to-back modules that share a common base having an annular configuration that also functions as a standoff. [Figure 4D2] Various views are provided of a probe according to another embodiment of the present invention, where the probe is formed from two back-to-back modules that share a common base having an annular configuration that also functions as a standoff. [Figure 4D3] Various views are provided of a probe according to another embodiment of the present invention, where the probe is formed from two back-to-back modules that share a common base having an annular configuration that also functions as a standoff. [Figure 4D4] Various views are provided of a probe according to another embodiment of the present invention, where the probe is formed from two back-to-back modules that share a common base having an annular configuration that also functions as a standoff.

[0019] [Figure 4E1] 4A-4D4 provide side views of the probe showing 17 sample layer levels in which the probe may be fabricated, where not all layers have a unique configuration.

[0020] [Fig. 4E2-A] A cross-sectional configuration is shown in both a top view (view -A) and an isometric view (view -B) of the unique configuration of layers L1 to L17, showing views of layers L1 and L17. [Fig. 4E2-B] A diagram of layers L1 and L17 is shown. [Fig. 4E3-A] A diagram of layers L2, L4, L6 and L8 is shown. [Fig. 4E3-B] A diagram of layers L2, L4, L6 and L8 is shown. [Fig. 4E4-A] A diagram of layers L3 and L7 is shown. [Fig. 4E4-B] A diagram of layers L3 and L7 is shown. [Fig. 4E5-A] A diagram of layer L5 is shown. [Fig. 4E5-B] A diagram of layer L5 is shown. [Fig. 4E6-A] A diagram of layer L9 is shown. [Fig. 4E6-B] A diagram of layer L9 is shown. [Fig. 4E7-A] A diagram of layers L10, L12, L14 and L16 is shown. [Fig. 4E7-B] A diagram of layers L10, L12, L14 and L16 is shown. [Fig. 4E8-A] A diagram of layers L11 and L15 is shown. [Fig. 4E8-B] A diagram of layers L11 and L15 is shown. [Fig. 4E9-A] A diagram of layer L13 is shown. [Fig. 4E9-B] A diagram of layer L13 is shown.

[0021] [Figure 5A1] A complete probe isometric view is provided, with Figures 5A1-5A5 all being from the same rotational orientation about the Z-axis or longitudinal axis of the exemplary probe, which has similarities to the probe of the Figure 4 series, with the primary exception that the central base of the probe of the Figure 4 series has been removed and upper and lower shunt bars have been provided to allow current to be shunted from the compliant element to a standoff or spring module support structure. [Figure 5A2] Provides a complete probe isometric view. [Figure 5A3] Provide a side view. [Figure 5A4] Provide a cross-sectional isometric view. [Figure 5A5] Provide a cross-sectional isometric view. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] Electrochemical Manufacturing Overview 1A-1I show side views of various states in an exemplary multi-layer, multi-material electrochemical manufacturing process. FIGS. 1A-1G show various stages in the formation of a single layer of a multi-layer manufacturing process in which a second metal is deposited on a first metal and into openings in the first metal such that the first and second metals form part of the layer. In FIG. 1A, a side view of a substrate 82 is shown having a surface 88 on which a patternable photoresist 84 is disposed as shown in FIG. 1B. In FIG. 1C, the pattern in the resist resulting from curing, exposing, and developing the resist is shown. Patterning of the photoresist 84 results in openings or apertures 92(a)-92(c) that extend from a surface 86 of the photoresist through the thickness of the photoresist to a surface 88 of the substrate 82. In FIG. 1D, a metal 94 (e.g., nickel) is shown electroplated into the openings 92(a)-92(c). In FIG. 1E, the photoresist has been removed (i.e., chemically or otherwise stripped) from the substrate, exposing areas of the substrate 82 not covered with the first metal 94. In FIG. 1F, a second metal 96 (e.g., silver) is shown blanket electroplated over the entire exposed portion of the substrate 82 (conductive) and over the first metal 94 (also conductive). FIG. 1G depicts the completed first layer of the structure resulting from exposing the first metal and planarizing the first and second metals to a height that sets the thickness for the first layer. In FIG. 1H, the results of repeating the process steps shown in FIGS. 1B-1G multiple times to form a multi-layer structure, each layer being made of two materials. In most applications, one of these materials is removed to produce a desired three-dimensional structure 98 (e.g., a component or device) or multiple such structures, as shown in FIG. 1I.

[0023] Various embodiments of various aspects of the invention relate to the formation of three-dimensional structures from materials that may be partially or fully electrochemically deposited or non-electrochemically deposited (as shown in the examples of FIGS. 1A-1I and as described in various patent applications incorporated herein by reference). Some of these structures may be formed from a single build level formed from one or more types of deposited materials, while others are formed from multiple build layers (e.g., 2 or more layers, more preferably 5 or more layers, and most preferably 10 or more layers) each including at least two types of materials. In some embodiments, layer thicknesses may be as small as 1 micron or as large as 50 microns. In other embodiments, thinner layers may be used, while in other embodiments, thicker layers may be used. In some embodiments, microscale structures have lateral features with minimum feature sizes on the order of microns to tens of microns, located with precision at the 0.1 to 10 micron level. In other embodiments, structures with less precision in feature placement and / or larger minimum features may be formed. In still other embodiments, greater precision and smaller minimum feature sizes may be desirable. In this application, mesoscale and millimeter scale have the same meaning and refer to devices that may have one or more dimensions that may extend in the range of 0.5 to 50 millimeters or greater, and features that are located with precision in the range of microns to 100 microns, with minimum feature sizes on the order of tens of microns to hundreds of microns.

[0024] Various embodiments, alternatives, and techniques disclosed herein may form multi-layer structures using a single patterning technique for all layers, or using different patterning techniques for different layers. For example, various embodiments of the present invention may perform selective patterning operations using conformal contact masks and masking operations (i.e., operations using a mask that is in contact with but not bonded to the substrate), proximity masks and masking operations (i.e., operations using a mask that selectively protects at least a portion of the substrate by being in proximity to the substrate even when not in contact), non-conformal masks and masking operations (i.e., masks and operations based on masks whose contacting surfaces are significantly non-conformal), and / or bonded masks and masking operations (masks and operations using a mask that is bonded to the substrate as opposed to only being in contact with the substrate where selective deposition or etching occurs). Conformal contact masks, proximity masks, and non-conformal contact masks share the property of being pre-formed and brought to or near the surface to be treated (i.e., the exposed portion of the surface to be treated). These masks can generally be removed without damaging the mask or the surface to which they were in contact or near. Adhesion masks are generally formed on and bonded to the surface to be processed (i.e., the portion of that surface to be masked) such that they cannot be completely destroyed or separated from the surface without damage beyond any point of reuse. Adhesion masks can be formed in a number of ways, including (1) application of photoresist, selective exposure of the photoresist, and then development of the photoresist, (2) selective transfer of a pre-patterned masking material, and / or (3) direct formation of the mask by computer-controlled deposition of material. In some embodiments, the adhesion mask material can be used as a sacrifice for a layer, or can be used only as a masking material that is replaced by another material (e.g., a dielectric or conductive material) before completion of the formation of the layer, where the replacement material is considered the sacrificial material of the respective layer. The masking material may or may not be planarized before or after depositing material into the voids or openings contained therein.

[0025] Patterning operations may be used in selectively depositing materials and / or in selectively etching materials. The selectively etched regions may be selectively filled with a different desired material or filled via blanket deposition, or the like. In some embodiments, layer-by-layer stacking may involve simultaneous formation of portions of multiple layers. In some embodiments, depositions performed in association with some layer levels may result in deposition in regions associated with other layer levels (i.e., regions that reside within top and bottom boundary levels that define different layer geometries). Such use of selective etching and / or interlaced material deposition in association with multiple layers is currently described in U.S. patent application Ser. No. 10 / 434,519 (now U.S. Pat. No. 7,252,861), entitled "Method and Apparatus for Electrochemically Fabricating Structures Through Selective Etching and Filling of Interlaced Layers or Voids," filed May 7, 2003 by Smalley. The referenced application is incorporated herein by reference.

[0026] Temporary substrates on which structures may be formed may be of the sacrificial type (i.e., destroyed or damaged during separation of the deposited materials to such an extent that they cannot be reused) or of the non-sacrificial type (i.e., not destroyed or excessively damaged, i.e., not damaged to such an extent that they cannot be reused, e.g., a sacrificial or release layer is located between the substrate and the initial layer of the structure to be formed). Non-sacrificial substrates may be considered reusable with little or no rework (e.g., re-planarizing one or more selected surfaces or applying a release layer, and the like), although for a variety of reasons they may or may not be reused.

[0027] Definitions of various terms and concepts (whether relating to the device itself, particular methods for making the device, or particular methods for using the device) that may be used in understanding embodiments of the present invention will be understood by those of skill in the art. Some such terms and concepts are described herein, while other such terms are addressed in various patent applications to which this application claims priority and / or which are incorporated by reference herein (e.g., U.S. Patent Application Serial No. 16 / 584,818).

[0028] As used herein, "longitudinal" refers to the long dimension of a probe, the end-to-end dimension of a probe, or the tip-to-tip dimension of a probe. Longitudinal may refer to a generally straight line extending from one end of a probe to another end of the probe, or it may refer to a curved or stepped path that has an incline or even changes direction along the height of the probe. When referring to a probe array, or to probes loaded in an array configuration, the longitudinal dimension may refer to a particular direction in which the probes in the array are oriented or extend, but may also simply refer to the overall height of the array, beginning with a plane that includes the first end, tip or base of the plurality of probes and extending perpendicular to a plane that includes the second end, tip or top of the probes. The context of use will usually make clear what is meant, especially to those skilled in the art. It is intended that the interpretation applied to the terms herein be as narrow as is justified by the details of the description provided or the context in which the terms are used. However, if such a narrow interpretation is not justified, the broadest reasonable interpretation is intended to apply.

[0029] The term "lateral" as used herein is related to the term longitudinal. In the context of stacking layers, the lateral direction refers to a direction within each layer, or two perpendicular directions within each layer (i.e., one or more directions that lie in the plane of the layers that are substantially perpendicular to the stacking direction of the layers). When referring to a probe array, the lateral direction generally has a similar meaning, and the lateral dimension is generally a dimension that lies in a plane that is parallel to the plane of the top or bottom of the array (i.e., substantially perpendicular to the longitudinal dimension). When referring to the probe itself, the lateral dimension may be perpendicular to the overall longitudinal axis of the probe, the local longitudinal axis of the probe (local lateral dimension), or simply a similar dimension as described for the array or layer. The context of use will usually make clear what is meant, especially to those skilled in the art. It is intended that the interpretation applied to the terms herein be as narrow as is justified by the details of the description provided or the context in which the terms are used. If such a narrow interpretation is not justified, the broadest reasonable interpretation is intended to apply.

[0030] As used herein, "substantially parallel" means parallel or nearly parallel, i.e., within 15° of parallel, more preferably within 10° of parallel, even more preferably within 5° of parallel, and most preferably within 1° of parallel. When the term is used without clarification, it should be interpreted as within 15° of parallel. When used with a specific clarification, the term should be interpreted according to the specific clarification.

[0031] As used herein, "substantially perpendicular" or "substantially normal" means perpendicular or close to perpendicular, i.e., within 15° of perpendicular, more preferably within 10° of perpendicular, even more preferably within 5° of perpendicular, and most preferably within 1° of perpendicular. When the term is used without clarification, it should be interpreted as within 15° of perpendicular. When used with a specific clarification, the term should be interpreted according to the specific clarification.

[0032] As used herein, "substantially planar," when referring to a surface, refers to a surface that is intended to be planar, but as one of ordinary skill in the art would understand, there may be some imperfections (i.e., when referring to millimeter and microscale devices, such as the main device embodiments described herein, imperfections that may deviate from planarity by up to 1-5 microns, but often by substantially less than a micron). When the term is used without clarification, it should be interpreted as having imperfections that deviate from planarity by 5 microns or less. When used with a specific clarification, the term should be interpreted according to the specific clarification. When referring to a structure, the term does not refer to an infinitely thin structure, but rather to one formed with substantially planar top and bottom surfaces, such as the top and bottom surfaces of each layer, or a group of successively formed layers of a structure formed using a multi-material, multi-layer electrochemical manufacturing method, particularly when each layer undergoes a planarization operation such as lapping, fly-cutting, chemical mechanical planarization, spinning coating, and the like. In some cases, a substantially planar structure may also imply that the height or thickness of the structure or an element of the structure is small compared to the size of the structure in the two perpendicular dimensions (i.e., the ratio of the vertical footprint to the thickness is greater than 25, preferably greater than 50, more preferably greater than 100, and most preferably greater than 200). When the term is used in relation to a structure without clarification, it should be interpreted as meeting the criteria of a substantially planar surface for both the upper and lower surfaces. In some contexts, a ratio requirement may also be applied, i.e. a ratio of at least 25. When the term is used in relation to a structure with a specific clarification, it should be interpreted according to the specific clarification.

[0033] "Relatively stiff" as used herein refers to a comparison of stiffness between two structural elements when the two structural elements are subjected to processing loads or stresses, where the relatively stiff structural element should experience at least 2 times, more preferably 5 times, and most preferably 10 times less deflection or strain compared to the other structural element. When the term is used in reference to a structural element without clarification, it should be interpreted as meeting the 2 times requirement. When the term is used in reference to a structural element with a specific clarification, it should be interpreted according to the specific clarification.

[0034] "Non-linear configuration" as used herein, particularly when applied to physical structures or elements, refers to a configuration that is not a straight rod-like configuration. A non-linear configuration is one that is two or three dimensional in nature with features that include one or more bends or curves. For example, a planar, non-linear structure can be a flat, helical structure. Non-linear configuration as used herein, when referring to a spring, does not refer to a force-deflection relationship unless such a relationship is specifically and explicitly indicated. Probe with planar spring module

[0035] The planar springs or planar compliant elements of the present invention can be formed in a number of different ways and can take on a number of different configurations. In general, the compliant elements include planar springs having portions that extend from a standoff to a tip or tip arm in a cantilever or bridge fashion (e.g., two or more springs originating at different lateral standoff locations and connecting to a common tip arm - here commonly referred to as a cantilever or cantilevers) across a gap or open area into which the spring may deflect during normal operation. These compliant portions generally have a two-dimensional non-linear configuration in a lateral plane and a thickness (e.g., longitudinal) extending perpendicular to the plane, where the two-dimensional configuration may be in the form of a beam structure with a curved or angled configuration, the length being much greater than its width, e.g., at least 5, 10, 20, or even 50 times or more in some variations, where the thickness is generally less than the length of the beam, e.g., at least 5, 10, 20, or even 50 times or more in some variations, or less than the lateral dimension of the spring element, e.g., 2, 5, 10, or even 20 times or more in some variations. In some embodiments, the plane of such configuration may be parallel to a layer plane (e.g., XY plane) when the probe or module is formed from multiple adhesive layers. The thickness of the spring (e.g., Z direction) may be the thickness of a single layer or may be the thickness of multiple layers. In some embodiments, the compliant element comprises multiple spaced planar spring elements.

[0036] In some embodiments, the compliant elements may include planar spring elements that are connected to such end elements at intermediate locations as well as to one another at the standoff or tip structures. In some such embodiments, the planar spring elements may start out at one end (e.g., the standoff or tip arm) as one or more thick springs with a relatively high spring constant, and then be provided with a reduced spring constant by removal of some intermediate spring material between the top and bottom of the initial spring structure, such that what starts out as a small number of thicker planar compliant elements (e.g., 1, 2, or 3 elements) transitions to a larger number of thinner planar elements, with some initial planar elements splitting into 2, 3, 4, 5 or more planar but thinner elements before reaching the other end (e.g., the tip arm of the standoff), so that, for example, the spring constant, force requirements, excess travel, stress, strain, current carrying capacity, overall size, and other operating parameters can be tailored to meet the requirements of a given application.

[0037] Reference numbers are included in many of FIGS. 2-5E2, where like numbers are used to denote similar structures or features in different embodiments.

[0038] An exemplary spring module is shown in Figures 2-3. Figure 2 depicts an isometric view of an exemplary spring module 200 with two non-flexible spring elements 221-1 and 221-2, a base 201 spaced apart from the spring elements, and a connecting support (e.g., standoff or bridge) 211 bridging the longitudinal module gap MG between the spring elements and the base. In the example of Figure 2, each of the two spring elements takes the form of a planar, radially extending helix, extending from the radially displaced bridge 211 to a centrally or axially located tip element 231 via a downwardly extending portion of the tip structure. The springs are longitudinally spaced apart by a gap SG. In this example, the bridge 211 connects one end of each spring element together, while the tip element 231 connects the other ends of the spring elements together via an extending portion of the tip structure. The tip elements 231 are formed with a desired width TW and a desired tip height TH extending above the upper spring, with each spring element formed with a desired material, beam thickness or spring height SH, beam width or spring width SW, spacing CS between the spring coils, and coiled beam length that allows the spring to deflect a desired amount without exceeding the elastic deflection limits of the structure and associated material from which it is formed, while providing a desired fixed or variable spring force over its deflection range. In particular, the tip length may be such that a desired compression of the module tip toward the base may occur without the base, bridge, and spring elements interfering with one another. In some embodiments, for example, the maximum travel distance for the tip of each module may be as little as 5 μm (μm=microns) or less, or as much as 500 μm (e.g., 25 μm, 50 μm, 100 μm, or 200 μm) or more. For example, in some embodiments the maximum travel distance per module may be between 25 μm and 200 μm, while in other example embodiments the maximum travel distance per module may be between 50 μm and 150 μm. In some embodiments the maximum tip travel distance may be set by a hard stop such as a spring or a flexure of the tip contacting the base, a stop structure on the base, or in some cases a surface contacting the tip that contacts the upper portion of the bridge (e.g., a surface of an adjacent module).In other embodiments, the maximum travel distance may be determined by a compliant spring or tip portion contacting a soft stop or compliance reducing structure. The force to achieve maximum deflection (or travel) may be as little as 0.1 grams to as much as 20 grams or more. In some embodiments, a force target of 0.5 grams may be appropriate. In other embodiments, 1 gram, 2 grams, 4 grams, 8 grams, or more may be appropriate. In some embodiments, the module height MH (longitudinal dimension) may be targeted to 50 μm or less, while in other embodiments, the module height may be targeted to 500 μm or more. In some embodiments, the overall module radial diameter or width MW may be 100 μm or less or 400 μm or more (e.g., 150 μm, 200 μm, or 250 μm). The spring beam elements or beam elements of the module may have a spring height SH of 1 μm or less to 100 μm or more (e.g., 10, 20, 30, or 40 μm) and a beam or spring width SW of 1 μm or less to 100 μm or more (e.g., 10, 20, 30, or 40 μm). The tips may have a uniform or varying shape (e.g., cylindrical, rectangular, conical, polygonal, or other configuration or combination of configurations). The tips that connect to the spring beams generally have a cross-sectional width TW that is greater than the width SW of the beam or beams to which they connect.

[0039] Figure 3 depicts an isometric view of a second exemplary spring module 300 that is similar to the module of Figure 2, except that the two spring elements are thicker, and therefore provide a greater spring constant than the elements of Figure 2. Viewed from another perspective, the example of Figure 3 requires more force for a given deflection, and therefore reaches the yield strength of the combined materials and structural geometry (e.g., reaches the elastic deflection limit) at a smaller deflection than the example of Figure 2.

[0040] In other embodiments, the spring modules may take different forms than those shown in Figures 2 or 3. For example, (1) a module may have a single spring element or more than two spring elements; (2) each of the spring elements may have variations in one or more of the following ranges: width, thickness, length, or rotation; (3) the spring elements may vary over the length of the element; (4) the spring elements may have configurations other than Euler spirals, such as rectangular spirals, rectangular spirals with rounded corners, S-shaped configurations, or C-shaped configurations; (5) individual spring elements may connect to more than a single bridge connection, such as bridge connection points located at 180 degrees, 120 degrees, or 90 degrees of the module; (6) the bridge connections may be on different bridges; (7) the base element may have a smaller radial extent than the spring / bridge connection so that when the modules are stacked, when the module tip is sufficiently compressed, the base of a higher module may extend below the upper extent of a lower adjacent module; (8) the module base may be replaced with an additional spring that, by flexure, allows compression of the module spring from both directions, and (9) the probe tip may not be laterally centered with respect to the overall lateral configuration of the module (i.e., not coincident with, or even collinear with, the main axis of compression or the main build axis when formed layer by layer).

[0041] 4A-4D4 provide various views of a probe 3400, or portions of such a probe, formed from two back-to-back (or base-to-base) modules, where the two modules share a common base having an annular configuration, and the probe includes several different features: (1) an annular base that anchors the upper helical spring array 3421-UC and the lower helical spring array 3421-LC by their outermost lateral extents to provide a basic standoff function between the upper and lower spring arrays; or frame 3401, where base or frame 3401 has a circular exterior with an internal opening having opposing arched sides 3401-A and narrower opposing flat sides 3401-F, where the upper and lower surfaces connecting the flat sides provide attachment areas for connecting with upper and lower supports or standoffs 3411-1, 3411-2, 3412-1, and 3412-2 which support the ends of the helical spring element, while the arched areas are where the outermost cantilevered portions of the springs may reside (before deformation). (2) each of the upper and lower spring arrays begins their inward path from an opposing pair of standoffs as two longitudinally spaced, coplanar pairs of wound helical cantilevers 3421-1U and 3421-2U ​​above the base, and 3421-1L and 3421-2L below the base, and each cantilever of each element extends along their inward movement (3) the helical spring elements connecting the upper contact tips have an opposite sense of rotation to the helical spring elements connecting the lower contact tips; (4) the helical spring elements connecting the upper contact tips split into two longitudinally spaced apart cantilevers, whereby four upper cantilever elements UC1-UC4 connect each side of upper end arm 3431-UA, while four lower cantilever elements LC1-LC4 connect either side of lower end arm 3431-LA which supports contact or coupling tips 3431-U and 3431-L, respectively; (3) the sense of rotation of the helical spring elements connecting the upper contact tips has an opposite sense of rotation to the helical spring elements connecting the lower contact tips;and (4) standoffs 3411-1, 3411-2, 3412-1, and 3412-2 provide only intermediate standoff functionality between the beams of the upper spiral array and between the helical beams of the lower spiral array, and do not provide standoff functionality between the two groups of springs (that functionality is provided directly by base 3401);

[0042] Figures 4A, 4B1 and 4B2 provide a side view, an upper isometric view, and a lower isometric view of probe 3400, respectively, in which different features of the probe can be seen. Figure 4B1 provides a view of the uppermost pair of helical springs in the upper spring section of the probe, while Figure 4B2 provides a view of the lowermost pair of helical springs in the lower spring section of the probe. Figures 4A, 4B1 and 4B2 each provide a view of upper and lower tips 3431-U and 3431-L along with central base 3401. 4A, 4B1, and 4B2 also provide views of the upper and lower standoffs 3411-1 and 3411-2, as well as views of the outer portions of the longitudinally spaced upper and lower cantilever elements 3421-1U and 3421-2U ​​and 3421-1L and 3421-2L. It can also be seen that the interleaved paths of pairs of coplanar cantilever elements may proceed inwardly from the respective standoffs to reach their respective central tips.

[0043] Figures 4C1 and 4C2 provide exploded isometric views of the probe 3400 from the top and bottom perspectives, respectively, where the bottom of the lower cantilever element and the top of the upper cantilever element are visible, as well as the top of the lower cantilever element and the bottom of the upper cantilever element, and the interior of the annular base 3401, including flat and arched sidewalls 3401-F and 3401-A. In Figures 4C1 and 4C2, the upper spring section or upper compliant element 3421-UC of the probe is spaced from the central frame or base element 3401, which is spaced from the lower spring section or lower compliant element 3421-LC of the probe. The upper tip 3431-U is visible in Figure 4C1, along with the tops of the upper and lower spring sections and the top of the central frame element. Lower tip 3431-L can be seen in Figure 4C2 along with the bottom of upper and lower spring sections 3421-UC and 3421-LC and the bottom of central frame element 3401. As can be seen by the dotted lines connecting the exploded elements, central frame element 3401 supports the outermost lateral extents of the upper and lower spring sections, and more specifically, standoffs 3411-1, 3411-2, 3412-1, and 3412-2, which support their cantilever elements.

[0044] 4D1-4D4 provide four different cutaway views of probe 3400, in which increasingly larger portions of the side of the probe have been cut away to reveal the internal structure of the probe so that the changes in the cantilever can be more easily seen and understood. As the helical element rotates inward toward the laterally central tip element, the cantilever elements transition from two longitudinally spaced cantilever elements 3421-2U ​​and 3421-1U above the base 3401 and two longitudinally spaced cantilever elements 3421-1L and 3421-2L below the base 3401 to four longitudinally spaced cantilever elements UC1 to UC4 above the base and four longitudinally spaced elements LC1 to LC4 below the base, where the beam reaches respective longitudinally movable tip arm elements 3431-UA and 3431-LA, which connect to or become tips 3431-U and 3431-L, respectively (best seen in Figure 4D3).

[0045] Figure 4E1 provides a side view of probe 3400 similar to Figure 4A, but with 17 sample layer levels L1-L17 identified, each layer having an identified thickness along the longitudinal axis of the probe (i.e., the Z-axis as shown), from which the probe may be fabricated via a multilayer fabrication process, such as a multilayer, multi-material electrochemical fabrication process, using single or multiple structural materials (along with sacrificial materials) and with a build or stack axis corresponding to the longitudinal axis of the probe. In such fabrication embodiments, the probes may be formed one at a time, although it is generally preferred to form the probes in batches of hundreds or even thousands of probes that are formed simultaneously by successive layer and layer stacking.

[0046] 4E2-A to 4E9-B show cross-sectional configurations shown in both top (-A) and isometric (-B) views for eight unique configurations of layers L1 to L17.

[0047] 4E2-A and 4E2-B show views of layers L1 and L17, where one can see the tips, which are the lower tip 3431-L for L1 and the upper tip 3431-U for layer L17.

[0048] Figures 4E3-A and 4E3-B show views of L2, L4, L6 and L8 which provide portions of planar spring spirals 3421-1L, 3421-2L and their innermost regions forming cantilever sections LC1 to LC4 (not shown), portions of the lower central tip arm 3431-LA and portions of the lower standoffs 3412-1 and 3412-2, where the double interlaced spiral configuration can be seen.

[0049] Figures 4E4-A and 4E4-B show views of L3 and L7, where incomplete helical elements 3421-1L, 3421-2L and standoffs 3412-1 and 3412-2 (similar to the features in Figures 4E3-A and 4E3-B, but without the LC1-LC4 portions) can be seen. The helical portions reflected in these figures combine with the upper and lower portions of Figures 4E3-A and 4E3-B to form a thick helical section in the outermost lateral portion of the spring, where the lower compliant element 3421-LC includes only two thick cantilever elements, as opposed to the four thinner cantilever elements LC1-LC4 that connect to the tip arm in the innermost lateral portion of the spring.

[0050] 4E5-A and 4E5-B show views of L5 including portions of the lower tip arm 3431-LA and standoffs 3412-1 and 3412-2, which provide a connection between the 3421-1L and 3421-2L cantilever spring portions.

[0051] 4E6-A and 4E6-B show views of L9 including a ring-like base 3401 that separates and connects upper and lower compliant elements 3421-UC and 3421-LC via two portions of the base that act as standoffs, where several lateral portions of the base align and engage with springs in their standoff regions 3411-1, 3411-2, 3412-1 and 3412-2. The actual start of the inwardly rotating helix of the probe 3400 depends on how the features of L8 interface with those of L9, and similarly how the features of L9 interface with those of L10. In particular, the interface is not perpendicular to the local length of the winding helix (e.g., so that a minimal width interface is provided), but is angled such that the outer portions of the helical beam that interface with the base are supported a different amount along their length than the inner portions. In some variations, the interfaces may be provided in such a manner that the interfaces are provided perpendicular to the local length of the beam, whereby the support provided by the base (or other standoff region) provides a laterally vertical or substantially vertical transition between supported and unsupported beam regions. In particular, vertical transitions are provided in other beam to standoff regions, such as can be seen at the interfaces formed by L4 and L5, L5 and L6, L12 and L13, and L13 and L14, and in other beam splitting regions, such as L2 to L3, L3 to L4, L6 to L7, L7 to L8, L10 to L11, L11 to L12, L14 to L15, and L15 to L16, where the beam transitions extend along a lateral line substantially perpendicular to the direct or local length of the beam. Such perpendicular and non-perpendicular interfaces and their consistent or varying use may be used in tuning probe performance or operating characteristics.In particular, due to the non-vertical interface with the base and due to the interfaces provided by and between the other beams of the cantilever, the outer portion of the cantilever is provided as a single thick beam, while the inner portion of the cantilever structure starts as two beams of intermediate thickness and ends with the cantilever in the probe arm as four thinner beams. In some variations, the initial cantilever structure (exiting laterally from the base) may start as a single thick beam or multiple beams throughout their width. Other transitions along the beam length may also be configured to provide smooth or vertical transitions, or to provide variable or non-vertical transitions. 4E7-A and 4E7-B show views of L10, L12, L14 and L16, which provide (1) portions of upper planar spring helices 3421-1U and 3421-2U ​​and their innermost extensions forming cantilever portions UC1-UC4 (not shown), and (2) portions of upper central tip arm 3431-UA and upper standoffs 3411-1 and 3411-2, where the double interlaced helical configuration can be seen. These are the upper compliant element counterparts to the lower compliant element mechanism shown in FIGS. 4E3-A and 4E3-B. Comparison of these views shows that the helical rotation sense of the upper and lower compliant elements has an inverted rotation sense. This inversion of sense may be considered beneficial in some cases and unnecessary or even harmful in other cases. When the spring elements are compressed, the tips may tend to rotate in a direction opposite to the inward rotation of the helical elements, which may create a frictional or rubbing effect that may tend to break down oxide coatings or cause damage to the surfaces in contact. Reversal of the direction of friction between the lower and upper probe tips may or may not be desirable and therefore may be taken into account during initial probe design. Similarly, reversal of the relative direction of the spaced apart upper spring elements is possible, as is reversal of the direction of the spaced apart lower spring elements.

[0052] Figures 4E8-A and 4E8-B show views of layers L11 and L15 where one can see the incomplete helical elements 3421-1U and 3421-2U ​​and the connection regions of standoffs 3411-1 and 3411-2 that bridge portions of the helix in Figures 4E7-A and 4E7-B to form a thick helical section in the outermost lateral portion of the spring, where the upper compliant element 3421-UC includes only two thick elements, in contrast to the four thinner elements that connect the tip arms 3431-UA in the innermost lateral region of the helix. Figures 4E8-A and 4E8-B provide the counterpart of the upper compliant element to the lower compliant element shown in Figures 4E4-A and 4E4-B.

[0053] Figures 4E9-A and 4E9-B show views of layers including portions of upper tip arm 3431-UA and standoffs 3411-1 and 3411-2L13 that provide connections between cantilevers 3421-1U and 3421-2U. Figures 4E9-A and 4E9-B provide images of portions of an upper compliant element that are counterparts to the counterparts of the lower compliant element seen in Figures 4E5-A and 4E5-B.

[0054] Many additional variations of the probes of FIGS. 4A-4E9-B are possible and will be apparent to those of skill in the art upon consideration of the teachings herein, including, for example, (1) variations in materials; (2) the number of turns or partial turns that each spring element incorporates, the number of interleaved springs used at each longitudinal level, the number of longitudinally spaced springs used (e.g., even, odd, and the like), the number and locations of longitudinal beam transitions that occur along the length of the helix, the direction of rotation that successive helices take (e.g., clockwise-counterclockwise-clockwise-counterclockwise-clockwise, clockwise-counterclockwise-counterclockwise-clockwise, and the like), tip shape, and the width and thickness of the cantilever beam. , variations in configuration; (3) the use of standoffs that space one or both of the upper and lower spring modules from the annular frame, (4) the use of standoffs closer to a central portion of the probe as opposed to the periphery of the probe; (5) the use of different types of frames or base structures and / or openings in such frames and base structures; (6) the use of spring structures that are a single helix at a given longitudinal level, or more than two interlaced helices at a given longitudinal level, rather than a pair of coplanar interlaced helices supported by different standoffs, and (7) variations obtained from the features of other embodiments and aspects described herein and variations thereof.

[0055] 5A1-5A5 provide a side view (FIG. 5A3), two complete probe isometric views (FIGS. 5A1 and 5A2), and two cross-sectional isometric views (FIGS. 5A4 and 5A5), all from the same rotational orientation about the Z or longitudinal axis of an exemplary probe 3500, which has similarities to the probe in the series of FIG. 4, with the primary exception that the central base ring of the probe in the series of FIG. 4 has been removed and upper and lower shunt bars 3571 have been removed. -U, 3571-L are provided on the upper tip arm 3531-UA and the lower tip arm 3531-LA so that, with sufficient compression of the probe tips relative to one another, current can follow a flow path from the upper tip 3531-U through the standoff 3510 via the contact area 3570 to the upper shunt bar 3571-U, to the lower shunt bar 3571-L, and back to the lower tip 3531-L via the contact area 3570, or vice versa.

[0056] The probe 3500 has an upper compliant element 3521-U and a lower compliant element 3521-L, which are spring assemblies connecting respective upper probe arms 3531-UA terminating in an upper probe tip 3531-U, and lower probe arms 3531-LA terminating in a lower probe tip 3531-L.

[0057] More specifically, the first compliant element 3521-U provides compliance in a direction substantially perpendicular to the planar configuration, where a first portion of the first compliant element is operatively coupled to the at least one standoff and a second portion of the first compliant element is operatively coupled to a first tip arm or upper probe arm 3531-UA terminating in a first tip or upper probe tip 3531-U that is elastically movable relative to the at least one standoff, where when the first compliant element 3521-U is not biased, the first tip arm 3531-UA directly or indirectly secures a first tip end extending longitudinally beyond a first end of the at least one standoff.

[0058] Further, the second compliant element 3521-L provides compliance in a direction substantially perpendicular to the planar configuration, where a first portion of the second compliant element is operatively coupled to the at least one standoff and a second portion of the second compliant element is operatively coupled to a second tip arm or lower probe arm 3531-LA that terminates in a second tip or lower probe tip 3531-L that can resiliently move relative to the at least one standoff, where when the second compliant element 3521-L is not biased, the second tip arm 3531-LA directly or indirectly secures a second tip end extending longitudinally beyond the second end of the at least one standoff.

[0059] According to an embodiment, the first compliant element 3521-U comprises a two-dimensional substantially planar spring when unbiased, such that the first compliant element provides compliance in a direction substantially perpendicular to its planar configuration, and the second compliant element 3521-L comprises a spring.

[0060] Alternatively, both the first compliant element 3521-U and the second compliant element 3521-L include respective two-dimensional substantially planar springs.

[0061] Many alternatives to the embodiment of Figures 5A1-5D3 are possible, such as: (1) using a shunt bar to shunt from only one of the spring modules (e.g., shunting current from one rather than both the upper and lower modules); (2) configuring the shunt bar to contact the standoffs on only one side of the probe; (3) configuring the shunt bar to initially contact the standoffs on only one side of the probe and eventually contact both sides with further compression; (4) instead of directly contacting the standoffs, the shunt can be made to contact a connecting ring or other bridge element located around the upper or lower perimeter of a bridge connecting one or more standoffs; (5) providing more than two contact locations for the shunt for simultaneous or sequentially increasing contact upon increasing compression; (6) configuring the shunt arm to contact the tip of the probe; (7) in some embodiments, the longitudinal face-to-face contact may be replaced or supplemented with a sliding contact that moves up and down along the edge of the standoff as the probe tip and tip arm undergo greater or lesser compression while always maintaining electrical connection within the functional range of motion; (8) such sliding contact may be enhanced by the use of an offset tip (i.e., not centered) or one-sided face-to-face contact, which aids in the tilt of the tip arm and thus shunting that can force the sliding contact; and (9) in other variations, the tip arm or another portion of the spring module may include a dielectric element to inhibit the flow of current through the spring element.

[0062] Still other variations to the probes of Figures 5A1-5D3 are possible and may involve probe features other than the shunt configuration described above. One such variation may include the use of a base ring or other standoff-to-standoff bridge element, while still other variations may include other probe features described herein or alternatives described in the variations. Further comments and conclusions

[0063] Although many embodiments have been presented above, many additional embodiments are possible without departing from the spirit of the present invention. Some of these additional embodiments may be based on a combination of the teachings herein with various teachings incorporated herein by reference. Some fabrication embodiments may use a multi-layer electrochemical deposition process and others may not. Some embodiments may use a combination of selective and blanket deposition processes and others may use neither, while still others may use a combination of different processes. For example, some embodiments may not use any blanket deposition process and / or they may not use a planarization process in the formation of successive layers. Some embodiments may use a selective deposition process or a blanket deposition process for some layers that is not an electrochemical deposition process. Some embodiments may use, for example, nickel (Ni), nickel phosphorus (Ni-P), nickel cobalt (NiCo), gold (Au), copper (Cu), tin (Sn), silver (Ag), zinc (Zn), solder, rhodium (Rh), rhenium (Re), beryllium copper (BeCu), tungsten (W), rhenium tungsten (ReW), aluminum copper (AlCu), palladium (Pd), palladium cobalt (PdCo), platinum (Pt), molybdenum (Mo), manganese (Mn), steel, P7 alloy, brass, chromium (Cr), chromium, chromium copper (CrCu), other palladium alloys, copper silver alloys as structural or sacrificial materials, while other embodiments may use different materials. Some of the above materials may be used preferentially for their spring properties, for example, while others may be used for their enhanced electrical conductivity, their wear resistance, their barrier properties, their thermal properties (e.g., yield strength or high heat conductivity at high temperatures), while some may be selected for their bonding characteristics, their separability from other substances, or even other characteristics of interest in the desired application or use.Other embodiments may use different materials or combinations of different materials as structural, sacrificial, or patterning materials, including dielectrics (e.g., ceramics, plastics, photoresists, polyimides, glasses, ceramics, or other polymers), other metals, semiconductors, and the like. Some embodiments may use, for example, copper, tin, zinc, solder, photoresist, or other substances as sacrificial materials. Some embodiments may use different structural materials in different layers or in different portions of a single layer. Some embodiments may remove sacrificial materials, while others may not. Some embodiments may form probe structures, while others may use the spring modules of the present invention for non-probe purposes (e.g., to bias other operating devices with a desired spring force or for compliant engagement).

[0064] It is also understood that probe elements of some embodiments of the invention may be formed by processes quite different from those described herein, and it is not intended that structural aspects of the invention need to be formed exclusively by processes taught herein or by processes that become evident from the teachings herein.

[0065] Although headers have been provided in various portions of this specification, the headers are not intended to be used to limit the application of teachings found in one portion of the specification from their application to other portions of the specification. For example, alternatives noted in the context of one embodiment are intended to apply to all embodiments to the extent that features of the different embodiments facilitate such application and do not contradict or eliminate any of the benefits of the embodiment employed.

[0066] Any aspect of the invention described herein is intended to represent a description of an independent invention that the applicant believes to be a full and complete description of the invention that may be written as an independent claim, without the need to incorporate additional limitations or elements from other embodiments or aspects described herein for interpretation or clarification, other than as expressly recited in the written independent claim. Any variations of the aspects described herein are also understood to represent separate and distinct features that, if written, would form a separate independent claim and that may be added separately to the independent claim or added as a dependent claim to further define the invention claimed by the respective dependent claim.

[0067] Numerous further embodiments and alternatives in the design and use of the embodiments of the present invention will be apparent to those skilled in the art in view of the teachings herein. As such, it is not intended that the invention be limited to the specific exemplary embodiments, alternatives, and uses described above. Rather, it is intended to be limited only by the scope of the claims set forth below.

Claims

1. 1. A probe for making contact between two electronic circuit elements, comprising: (a) at least one standoff having a first end and a second end longitudinally spaced apart; (b) at least one first compliant element including a spring element providing compliance in a direction substantially perpendicular to a planar configuration, where a first portion of the first compliant element is operatively coupled to the at least one standoff and a second portion of the first compliant element is operatively coupled to a first probe arm that is resiliently movable relative to the at least one standoff, where the first probe arm directly or indirectly secures the first distal end extending longitudinally beyond a first distal end of the at least one standoff when the first compliant element is unbiased; and (c) at least one second compliant element including a spring element providing compliance in a direction substantially perpendicular to the planar configuration, where a first portion of the second compliant element is operatively coupled to the at least one standoff and a second portion of the second compliant element is operatively coupled to a second probe arm that is resiliently movable relative to the standoff, where the second probe arm directly or indirectly secures a second tip end that extends longitudinally beyond the second end of the at least one standoff when the second compliant element is not biased. Equipped with wherein the first compliant element and the first portion of the second compliant element are longitudinally spaced apart from one another, and wherein biasing of at least one of the first distal end and the second distal end toward the other causes the second portions of the first compliant element and the second compliant element to longitudinally move in a manner selected from the group consisting of: (A) moving closer together, and (B) moving further apart; wherein the probe includes a mechanism selected from the group consisting of: (A) at least one of the first probe arm and the second probe arm supports a shunt element that shunts current away from a spring element coupled to a respective standoff and supporting the respective first probe arm and the second probe arm while making an electrical connection to the at least one standoff; and (B) both of the first probe arm and the second probe arm support a respective shunt element that shunts current away from a respective spring element coupled to a respective standoff and supporting the respective first probe arm and the second probe arm while making an electrical connection to at least one respective standoff. probe.

2. 2. The probe of claim 1, wherein the level of current shunting is selected from the group consisting of: (1) at least 50%, (2) at least 70%, (3) at least 80%, (4) at least 90%, (5) at least 95%, and (6) at least 99%.

3. 2. The probe of claim 1, comprising upper and lower shunt bars as shunt elements on upper and lower probe arms, such that when the upper and lower tip ends are compressed towards each other, a current path is formed from the upper tip end through the at least one standoff via a contact area to the upper shunt bar, to the lower shunt bar, and to the lower tip end via a further contact area, or vice versa.

4. The probe of claim 1 , further comprising a shunt element that provides electrical connection to the at least one standoff on only one side of the probe.

5. 10. The probe of claim 1, comprising a shunt element that initially makes electrical connection with the at least one standoff on only one side of the probe and makes electrical connection with both sides of the probe only when upper and lower tip ends are compressed toward one another.

6. The probe of claim 1 , further comprising at least one bridge element connecting the one or more standoffs.

7. The probe of claim 1 , further comprising multiple contact areas for simultaneously contacting multiple shunt elements.

8. The probe of claim 1 , further comprising a plurality of contact regions that contact successively increasing numbers of shunt elements as the upper and lower tip ends are increasingly compressed relative to one another.

9. 10. The probe of claim 1, further comprising a sliding contact that moves up and down along an edge of the at least one standoff as the corresponding probe tip end and probe tip arm undergo greater or lesser compression while maintaining electrical connection within a functional range of motion.

10. The probe of claim 9 , wherein the probe tip end is an offset tip that assists in tilting the probe tip arm and the sliding contact.

11. The probe of claim 9 , wherein the sliding contact is a one-sided, facing contact that assists in tilting the probe distal arm.

12. The probe of claim 1 , further comprising a dielectric element coupled to at least one compliant element for impeding the flow of current through a corresponding spring element.

13. 2. The probe of claim 1, wherein the first compliant element comprises a two-dimensional substantially planar spring as a spring element when unbiased, such that the first compliant element provides compliance in a direction substantially perpendicular to the planar configuration.

14. The probe of claim 1 , wherein the second compliant element comprises a spring element selected from the group consisting of: (A) a two-dimensional substantially planar spring; or (B) a spring.

Images