Coating system and method for semiconductor equipment components

JP2025513480A5Pending Publication Date: 2025-11-05OERLIKON SURFACE SOLUTIONS AG PFAFFIKON
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Patent Information

Application Number
JP2024562147
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2022-04-22
Filing Date
2023-04-20
Publication Date
2025-11-05

AI Technical Summary

Technical Problem

Semiconductor equipment faces severe wear and chemical attacks, particularly during plasma etching, leading to particle accumulation and contamination on wafers, which results in waste or reprocessing.

Method used

A method and apparatus using physical vapor deposition (PVD) coating technology to apply a uniform etch-resistant or hard wear-resistant ceramic layer on semiconductor equipment components, specifically employing a chamber with movable magnetrons to ensure even coating distribution.

Benefits of technology

The solution effectively protects semiconductor equipment from wear and chemical attacks by providing a uniform, thick, and dense ceramic coating, reducing particle accumulation and contamination, and extending the life of expensive components like electrostatic chucks.

✦ Generated by Eureka AI based on patent content.

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Abstract

An apparatus for coating a component. The apparatus includes a chamber. A first magnetron and a second magnetron are disposed within the chamber to deliver a coating material to a surface of the component. A component holder is disposed within the chamber and configured to hold the component. During coating of the component, the first magnetron and the second magnetron are configured to be positioned and oriented adjacent a surface of the component held by the component holder, and the first magnetron and the second magnetron are configured to move relative to the component holder or the component holder is configured to move relative to the first magnetron and the second magnetron.
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Description

[Technical field]

[0001] The present invention relates to the application of coatings to semiconductor equipment, such as liners, shutters, doors, dielectric windows, and electrostatic chucks. In particular, the present invention provides a method and apparatus for uniformly applying protective coatings to surfaces of semiconductor equipment components exposed to plasma to help protect the semiconductor equipment from abrasion and chemical attack. [Background technology]

[0002] Semiconductor equipment used in the manufacture of semiconductor devices is subject to severe wear and chemical attack due to repeated exposure to plasma during manufacture, particularly in the case of plasma etching. The etching and clamping and unclamping of these components can cause wear and the accumulation of particles, or debris, on the surfaces of the wafers being processed. The accumulation of particles can contaminate the wafers, leading to their scrapping or reprocessing. Summary of the Invention [Problem to be solved by the invention]

[0003] Chemical attack on semiconductor equipment is typically caused by highly reactive fluorine or chlorine chemicals. Attack by these chemicals is particularly strong in plasma discharges. In some applications, protection from fluorine is achieved by coating the components with a layer of Y2O3 or YOF using thermal or aerosol spray techniques. These coatings typically have a thickness of about 100 μm. However, due to the porous nature of these coatings, it is usually necessary to make them thicker to protect the underlying components.

[0004] Mechanical wear is typically observed during repeated processing of wafers on an electrostatic chuck. The dots of ceramic material, the so-called mesa structures, usually undergo wear during repeated processing. Electrostatic chucks are expensive components, and it is highly desirable to regenerate worn mesa structures.

[0005] It would be desirable to have a method and apparatus for applying etch-resistant protective layers or hard wear-resistant ceramic layers to semiconductor equipment components using physical vapor deposition (PVD) coating techniques. [Means for solving the problem]

[0006] An apparatus for coating a component is provided. The apparatus includes a chamber. A first magnetron and a second magnetron are disposed within the chamber to deliver a coating material to a surface of the component. A component holder is disposed within the chamber and configured to hold the component. During coating of the component, the first magnetron and the second magnetron are configured to be positioned and oriented adjacent a surface of the component held by the component holder, and the first magnetron and the second magnetron are configured to move relative to the component holder or the component holder is configured to move relative to the first magnetron and the second magnetron.

[0007] In the above apparatus, the orientation of the first magnetron and the second magnetron relative to a surface of a component held by the component holder is configured to be alterable relative to the component holder.

[0008] In the above apparatus, the movement of the first and second magnetrons relative to the component holder can be achieved by configuring the component holder to be in a fixed position and the first and second magnetrons to move during coating of the component, the fixed position of the component holder preferably excluding translational and rotational movement relative to the chamber.

[0009] Movement of the first magnetron and the second magnetron relative to the component holder can be used to improve the coating thickness distribution on the surface of the component, particularly to enable coating of component surfaces where a uniform coating thickness distribution is otherwise difficult to achieve.

[0010] To increase the efficiency of the process, movement of the first magnetron and the second magnetron relative to the component holder may be performed while the magnetrons are operating.

[0011] In the above apparatus, the component is an electrostatic chuck or a window and forms at least a part of a coating chamber wall, and is preferably a chamber wall.

[0012] In the above apparatus, the first magnetron and the second magnetron are preferably operated with a power supply that provides a bipolar pulse.

[0013] In the above apparatus, the component may be, for example, a liner, an electrostatic chuck, or a window.

[0014] The above apparatus may further include a third magnetron and a fourth magnetron, wherein the component is a liner, the first magnetron and the second magnetron are configured to be positioned adjacent to an inner surface of the liner, and the third magnetron and the fourth magnetron are configured to be positioned adjacent to an outer surface of the liner.

[0015] In the above apparatus, the first magnetron and the second magnetron deposit, for example, a film including or being Al2O3, AlN, AlOF, AlON, Y2O3, YAG, YOF, YF3, Er2O3, or ErOF, or a combination thereof, on the component by forming the film using a metal target (e.g., Al, Y, AlY, Er, etc.) or a compound target (e.g., Al2O3, AlN, Y2O3, YF3, Er2O3, etc.) and supplying an appropriate reactive gas mixture (e.g., N2, O2, O2+N2, CF4, CF4+O2, etc.). However, it is also possible to deposit oxides, nitrides, fluorides, carbides and / or carbon-based coatings such as DLC or doped DLC. Furthermore, multi-compound ceramic alloys (containing more than one, two, three or more metallic elements, also called high entropy) can be deposited.

[0016] In the above apparatus, the component holder may be a rotating assembly. In the above apparatus, the component holder may extend through a wall of the chamber.

[0017] In the above apparatus, the component holder may be a wall of the chamber. In the above apparatus, the first magnetron and the second magnetron may be configured to rotate relative to the component holder, or the component holder may be configured to rotate relative to the first magnetron and the second magnetron, during coating of the component.

[0018] Further provided is a method for coating a component that includes positioning a component holder configured to hold a component in a coating chamber, positioning and orienting a first magnetron and a second magnetron in the coating chamber adjacent to a surface of the component held by the component holder, and moving the component holder relative to the first and second magnetrons or moving the first and second magnetrons relative to the component holder while sputtering material from the first and second magnetrons onto the component.

[0019] In the above method, moving the component holder relative to the first and second magnetrons, or moving the first and second magnetrons relative to the component holder, may include changing an orientation of the first and second magnetrons relative to a surface of the component held by the component holder as the component holder moves relative to the first and second magnetrons, or as the first and second magnetrons move relative to the component holder.

[0020] In the above method, moving the first magnetron and the second magnetron relative to the component holder can include maintaining the component holder in a fixed position while the first magnetron and the second magnetron move relative to the component holder. The fixed position of the component holder preferably excludes translational and rotational movement relative to the chamber.

[0021] In the above method, moving the component holder relative to the first magnetron and the second magnetron or moving the first magnetron and the second magnetron relative to the component holder can include depositing a film on the component that includes or is Al2O3, AlN, AlON, AlOF, Y2O3, YOF, YAG or YF3, Er2O3, ErOF, DLC or doped DLC, or a combination thereof. However, it is also possible to deposit oxides, nitrides, fluorides, carbides, and / or carbon-based coatings. Furthermore, multi-compound ceramic alloys (containing more than one, two, three or more metal elements, also called high entropy) can be deposited.

[0022] In the above method, the first magnetron and the second magnetron have power supplies that provide bipolar pulses.

[0023] The above method may further include deposition with a third magnetron and a fourth magnetron, wherein the component is a liner, the first magnetron and the second magnetron are positioned adjacent to an inner surface of the liner, and the third magnetron and the fourth magnetron are positioned adjacent to an outer surface of the liner.

[0024] In the above method, the component holder may be a rotating assembly. In the above method, the component holder may extend through a wall of the coating chamber.

[0025] In the above method, the component holder may be a wall of the coating chamber. In particular, the component holder may be part of a wall that seals the interior of the coating chamber from the surroundings. Thus, the component holder may be for part of a vacuum seal.

[0026] The arrangement of the component holder as part of the coating chamber has at least the advantage that the component holder can be equipped with a cooling circuit from the ambient side without the need for special feedthroughs. One further advantage is that the component holder can be connected to an RF power supply from the ambient side in a simple and technically accessible manner.

[0027] In the above method, moving the component holder relative to the first magnetron and the second magnetron, or moving the first magnetron and the second magnetron relative to the component holder may include rotating the component holder relative to the first magnetron and the second magnetron, or rotating the first magnetron and the second magnetron relative to the component holder. [Brief description of the drawings]

[0028] [Figure 1] 1 shows an open coating chamber with a pair of moveable magnetrons according to one embodiment of the present invention. [Diagram 2] 2 shows the pair of magnetrons of FIG. 1 positioned and oriented to coat a liner. [Figure 3a] FIG. 3 is a cross-sectional perspective view of the liner of FIG. 2 illustrating a coating on the liner. [Figure 3b] 3b is a graph of the thickness of the coating of FIG. 3a along the liner. [Figure 4a] FIG. 2 is a cross-sectional perspective view showing a pair of magnetrons (represented by oval dashed lines) positioned near the two liners. [Figure 4b] FIG. 4b is a cross-sectional side view of the pair of magnetrons and two liners of FIG. 4a. [Diagram 5] FIG. 2 is a cross-sectional side view of a coating assembly according to another embodiment of the present invention, showing an electrostatic chuck and a pair of magnetrons disposed within the chamber. [Figure 6a]FIG. 2 is a cross-sectional side view of the coating assembly showing a pair of magnetrons inside the liner. [Figure 6b] FIG. 6b is a cross-sectional perspective view of the coating assembly of FIG. 6a. [Figure 7] FIG. 2 is a perspective view of a coating assembly according to another embodiment of the present invention showing a first pair of magnetrons and a second pair of magnetrons positioned adjacent to a liner. [Figure 8a] FIG. 13 is a cross-sectional side view of the liner showing the positioning of the cooling junctions on the liner. [Figure 8b] FIG. 8b is a cross-sectional side view showing the temperature distribution in the liner of FIG. 8a. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] Referring to FIG. 1, an exemplary coating assembly 10 according to a first embodiment is shown. The coating assembly 10 includes a chamber 12 configured to receive a component to be coated, such as, for example, a liner 22 (FIG. 2), a first magnetron 14A, and a second magnetron 14B. A controller 50 is provided to control the operation of the coating assembly 10. The controller 50 ensures that the operating point of the reactive sputtering process is stable with respect to sputter target poisoning and stoichiometry. A power supply 16 is preferably positioned outside the chamber 12 to supply constant power to the first magnetron 14A and the second magnetron 14B, and maintains the voltage at a predetermined value by adjusting the flow of reactive gases upon command by the controller 50. It is contemplated that the power supply 19 may be a bipolar pulse generator operating at a predetermined frequency, such as, for example, 50 kHz to 100 kHz. The power supply 19 is configured and controlled such that, during operation, one of the first magnetron 14A and the second magnetron 14B is being sputtered (i.e., the anode) while the other of the first magnetron 14A and the second magnetron 14B is the cathode. Bipolar sputtering has the advantage of stable electrical conditions since, even in oxygen reaction mode, one target is always the anode, not covered with an insulating layer.

[0030] Additionally, the coating assembly 10 includes a flexible tube 18 positioned to supply high voltage and cooling medium to the first magnetron 14A and the second magnetron 14B. The tube 18 allows the first magnetron 14A and the second magnetron 14B to be freely adjusted within the vacuum space of the chamber 12.

[0031] The coating assembly 10 can include a door (not shown) to allow a user to insert and remove the liner 22. The door (not shown) can seal the chamber 12 so that a vacuum can be applied to the chamber 12 during processing by a vacuum source 19, such as a vacuum pump.

[0032] As shown in Figure 1, the first magnetron 14A and the second magnetron 14B are positioned adjacent one wall of the chamber 12. It is contemplated that the first magnetron 14A and the second magnetron 14B may be positioned in various positions and orientations relative to the liner 22. With reference to Figure 2, the first magnetron 14A is positioned adjacent one side 22a of the liner 22 and the second magnetron 14B is positioned adjacent an opposite side 22b of the liner 22. The first and second magnetrons 14A, 14B are oriented such that the target surfaces 15 of the first and second magnetrons 14A, 14B direct material toward the adjacent sides 22a, 22b, as represented by arrow A in Figure 2. Although the first and second magnetrons 14A, 14B are shown as stationary, it is contemplated that the first and second magnetrons 14A, 14B may rotate to apply sputter material to the entire circumference of the liner 22. Alternatively, the first and second magnetrons 14A, 14B may be stationary and the liner 22 (and a component holder that holds the liner 22, described in detail below) may rotate relative to them. It is also contemplated that the orientation of the first and second magnetrons 14A, 14B relative to the object being coated may change, e.g., rock, as they rotate, or as the liner 22 (and its component holder) rotates, so that the entire surface of the liner 22 is properly coated.

[0033] In the coating process, the first and second magnetrons 14A, 14B and the gases supplied to the chamber 12 could be selected to deposit a dense coating of oxide, nitride, or fluoride or oxyfluoride of yttrium, erbium, or other metal, or metal alloy (e.g., Al-W, Al-Si, or multi-component coatings with three, four, or five or more metal elements)-oxide-oxyfluoride-fluoride, or combinations thereof. For example, a film of Al2O3, AlN, AlOF, AlON, YO3, YOF, YF3, Er2O3, or ErOF could be deposited on the liner 22.

[0034] As described above, the first and second magnetrons 14A, 14B and / or the liner 22 are moved relative to one another and the first and second magnetrons 14A, 14B are oriented such that the entire surface of the liner 22 that will be exposed to a subsequent etching process is coated with the desired film. With reference to FIG. 3a, a film 24 is shown as being applied to the inner surface of the liner 22. The thickness of the film 24 may vary along the surface of the liner 22. FIG. 3b shows an exemplary film thickness distribution along section IV of the inner surface of the liner 22. The exemplary film thickness distribution shows a thin coating at section I. At sections II-IV, the coating is thicker and generally uniform in thickness, which is desirable for this particular application.

[0035] 4a and 4b, according to a second embodiment, the coating assembly 10 may be configured to position the first magnetron 14A adjacent to the first liner 32 and the second magnetron 14B adjacent to the second liner 34. For clarity, the target surfaces 15 of the first and second magnetrons 14A, 14B are shown as ellipses in FIG. 4a. As shown, the first magnetron 14A is directed toward the inner surface of the first liner 32 and the second magnetron 14B is directed toward the inner surface of the second liner 34. It is believed that the arrangement of the magnetrons 14A, 14B shown in FIG. 4a and 4b can achieve a thickness distribution similar to that disclosed for the first embodiment (see FIG. 3a and 3b).

[0036] 5, a coating assembly 100 according to a third embodiment is shown. The coating assembly 100 includes a chamber 110 defined by a wall 110a having a door 112 for providing access to an interior 110b of the chamber 110.

[0037] A first magnetron 114A and a second magnetron 114B are positioned in the interior 110b of the chamber 110. In the illustrated embodiment, the first magnetron and the second magnetrons 114A, 114B are mounted on a rotating assembly 120 (i.e., similar to a component holder) that extends through one wall 110a of the chamber 110.

[0038] The rotation assembly 120 includes a motor 122 that rotates the first and second magnetrons 114A, 114B inside the chamber 110 when commanded by the controller 150. In the illustrated embodiment, the rotation assembly 120 includes a single shaft about which the first and second magnetrons 114A, 114B rotate.

[0039] A power supply 132 and a cooling device 134, both controlled by a controller 150, may be connected to the first and second magnetrons 114A, 114B via the rotating assembly 120. The power supply 132 (similar to the power supply 16) may be a bipolar pulse generator operating at a predetermined frequency, such as, for example, 50 kHz to 100 kHz. In operation, the first and second magnetrons 114A, 114B may alternately be cathodes and anodes, as described in more detail above.

[0040] The cooling device 134 may be configured to provide cooling via a cooling fluid, such as water, to the first and second magnetrons 114A, 114B via the rotating assembly 120 during operation. The first and second magnetrons 114A, 114B may have internal volumes sealed from the interior 110b of the chamber 110, and the internal volumes of the first and second magnetrons 114A, 114B may be maintained at atmospheric pressure when the interior 110b of the chamber 110 is maintained at vacuum. The internal volumes of the magnetrons maintained at atmospheric pressure facilitates technical construction of the rotating assembly.

[0041] In the embodiment shown in FIG. 5, the component to be coated is an electrostatic chuck 160. The electrostatic chuck 160 is a component that can be used to hold a wafer in a desired position during processing of the wafer. As will be appreciated by those skilled in the art, the electrostatic chuck 160 can include a mesa surface that holds the wafer by electrostatic force. The mesa surface defines the minimum contact area of ​​the wafer and allows the electrostatic force to achieve a helium cushion between the electrostatic chuck 160 and the wafer to provide a thermally conductive bridge. It is desirable for the height of the mesa surface to be accurate for a uniform electrostatic force. In the illustrated embodiment, the surface of the electrostatic chuck 160 to be coated extends into the interior 110b and faces the first and second magnetrons 114A, 114B. The electrostatic chuck 160 may be connected to a second power supply 162 and a second cooling device 164. A second power supply 162 may be provided to maintain the electrostatic chuck 160 at a desired potential for coating, and a second cooling device 164 may be provided to maintain the electrostatic chuck 160 at a desired component temperature for the coating process. It is contemplated that the second power supply 162 may be an RF power supply operating at 13.56 MHz. As shown, the controller 150 may control the operation of the second power supply 162 to maintain proper operation of the coating assembly 100. In the illustrated embodiment, the electrostatic chuck 160 is attached to a wall 110a of the chamber 110 and seals an opening in the wall 110a. In this regard, the chamber 110 defines a component holder for the chuck 160.

[0042] It is contemplated that the temperature of the walls 110a of the chamber 110 may be regulated by a third cooling device 166. In operation, the controller 150 may control this third cooling device 166 to maintain the temperature of the chamber 110 at a predetermined chamber temperature selected to provide a desired coating of the electrostatic chuck 160 or any other components located within the chamber 110. Prior to venting the chamber 110 to atmosphere, the cooling device 166 may preferably be used to heat the chamber 110 to a predetermined temperature to reduce moisture contamination.

[0043] It is contemplated that the cooling device 134, the second cooling device 164, and the third cooling device 166 may all use the same fluid source, or they may be separate fluid devices that supply cooling fluid independently to their respective components.

[0044] 6a and 6b, in a third embodiment, the coating assembly 100 is configured to receive a liner 170. In the illustrated embodiment, the first and second magnetrons 114A, 114B are positioned and oriented adjacent to the inner surface 172 of the liner 170 to direct the coating material to the inner surface 172. Adjusting the first and second magnetrons 114A, 114B diagonally (see, e.g., FIG. 2) as well as in a straight line may be beneficial in applying a uniform coating to the surface of the 3D shape being coated. The first and second magnetrons 114A, 114B are mounted on a rotating assembly 120 to rotate inside the liner 170. It is also contemplated that the liner 170 itself may rotate relative to the first and second magnetrons 114A, 114B while the magnetrons 114A, 114B are stationary. To rotate the liner 170 relative to the first and second magnetrons 114A, 114B, the liner 170 may be mounted on the rotation assembly 120 in place of the first and second magnetrons 114A, 114B.

[0045] 7, in yet another embodiment, a first pair of magnetrons 114A, 114B (magnetron 114B is obscured by liner 170 in FIG. 7 ) are positioned adjacent to an inner surface 172 of liner 170, while a second pair of magnetrons 214A, 214B are positioned adjacent to an outer surface 174 of liner 170. In operation, the first pair of magnetrons 114A, 114B and the second pair of magnetrons 214A, 214B simultaneously apply a coating to each of the inner surface 172 and outer surface 174 of liner 170.

[0046] In the above embodiments where the component to be coated is a liner 22, 170, the inventors contemplate that the chamber 12 can be made of aluminum if the coating is an oxide or nitride, and can be made of steel if CF4 is used as the gas. In these embodiments, the vacuum source 19 can be a pump, such as a turbo pump. The rotating assembly 120 can provide water (via the cooling device 134) and / or high voltage and / or bias voltage (via the power supply 132), as described above. In one example, the liner 22, 170 rotates, while the first and second magnetrons 114A, 114B are stationary. The coating assembly 100 can include a pair of magnetrons 114A, 114B (see Figures 6a and 6b) located inside the liner and / or a second pair of magnetrons 214A, 214B (see Figure 7) located outside the liner 170. The magnetrons 114A, 114B, 214A, 214B can be operated as a single magnetron or a dual magnetron pair. The gas supplied can be, by way of example and not limitation, Ar and / or O2 and / or N2 and / or CF4. One or more gas inlets to the chamber 12 are not shown in the figure.

[0047] In the above embodiment where the component to be coated is an electrostatic chuck 160 or another component having a flat disk-like shape (e.g., a window), the inventors contemplate that the chamber 12 can be fabricated from aluminum and temperature controlled as described above in FIG. 5. In this embodiment, the vacuum source 19 can be a pump, such as a turbo pump. The rotating assembly 120 can provide water (via the cooling device 134) and / or high voltage (via the power supply 132), as described above. In one example, a first magnetron and a second magnetron 114A, 114B are attached to the rotating assembly 120, and the electrostatic chuck 160 is stationary. The electrostatic chuck 160 can also function as a lid for the chamber 110, thus forming part or a wall of the chamber. The coating assembly 100 can include a pair of magnetrons 114A, 114B that can operate as a single magnetron or a dual magnetron. The gases supplied to the chamber 110 may be, by way of example and not limitation, Ar and / or O2 and / or N2.

[0048] For the above embodiments, coating of the components may be accomplished by reactive sputtering, preferably reactive dual magnetron sputtering, most preferably bipolar reactive dual magnetron sputtering. The following table summarizes the aforementioned operative components.

[0049] [Table 1]

[0050] 8a and 8b, as described in detail above, various components of the coating assembly 100 can be connected to cooling devices 134, 164 to help maintain the components at a predetermined temperature. According to another embodiment, the component to be coated, such as the liner 170, can be contacted with a cooling device, such as a water-cooled clamp, along the flange 176 of the liner. When the sputtering flux from the first magnetron 114A or the second magnetron 114B is directed to the liner 170 at position B (FIG. 8a), the temperature distribution in the liner 170 resulting from the cooling device located at the flange 176 and the sputtering flux can be as shown in FIG. 8b.

[0051] Although the above embodiments are described with respect to liners and electrostatic chucks, it will be understood that the embodiments may be used to apply coatings to other components of semiconductor equipment.

[0052] While the invention has been described with respect to selected embodiments, it is to be understood that the scope of the invention is not limited thereby, but rather encompasses all modifications and variations thereof that are within the spirit and scope of the appended claims.

Claims

1. 1. An apparatus for coating semiconductor equipment components, comprising: a chamber; a first magnetron and a second magnetron disposed within the chamber for applying a coating material to a surface of the component; a component holder disposed within the chamber and configured to hold the component; Equipped with the first magnetron and the second magnetron are configured to be positioned and oriented adjacent to the surface of the component held by the component holder, and the first magnetron and the second magnetron are configured to move relative to the component holder or the component holder is configured to move relative to the first magnetron and the second magnetron during coating of the component, and the apparatus comprises: means for flexibly adjusting the position and orientation of at least one of the first magnetron and the second magnetron relative to the surface of the component; The apparatus further comprises:

2. The movement of the first magnetron and the second magnetron relative to the component holder includes: the component holder is set in a fixed position; the first magnetron and the second magnetron are configured to move within the chamber; The apparatus of claim 1 , wherein:

3. The apparatus of claim 2 , wherein the first magnetron and the second magnetron are configured to move while the magnetrons are operating.

4. Apparatus according to any one of claims 1 to 3, wherein the component forms at least part of the coating chamber wall via a dedicated adapter, and is preferably a chamber wall.

5. The apparatus of claim 4 , wherein the component is an electrostatic chuck or a window.

6. 4. The apparatus of claim 1, wherein the first magnetron and the second magnetron are operated with a power supply that provides bipolar pulses or are operated as individual magnetrons.

7. The apparatus of any one of claims 1 to 3, wherein the component is a liner, an electrostatic chuck, or a window.

8. The apparatus of any one of claims 1 to 3, further comprising a third magnetron and a fourth magnetron, wherein the component is a liner, the first magnetron and the second magnetron are configured to be positioned adjacent to an inner surface of the liner, and the third magnetron and the fourth magnetron are configured to be positioned adjacent to an outer surface of the liner.

9. The first magnetron and the second magnetron are provided with Al on the component. 2 O 3 , AlN, AlON, AlOF, Y 2 O 3 , YOF, YAG, YF 3 , Er 2 O 3 4. The apparatus of claim 1, wherein the apparatus is used with reactive gases to deposit films of ErOF, DLC, or doped DLC, or combinations thereof.

10. The apparatus of any one of claims 1 to 3, wherein the first magnetron and the second magnetron are mounted on a rotating assembly.

11. The apparatus of claim 10 , wherein the component holder is attached to or is a rotating assembly.

12. The apparatus of claim 10 , wherein at least one of the magnetrons has an interior volume sealed from the interior of the chamber.

13. The apparatus of claim 12 , wherein the interior volume is maintained at atmospheric pressure when the chamber is maintained at a vacuum.

14. The apparatus of any one of claims 1 to 3, wherein the component holder extends through a wall of the chamber.

15. The apparatus of any one of claims 1 to 3, wherein the component holder is a wall of the chamber.

16. 4. The apparatus of claim 1, wherein the first magnetron and the second magnetron are configured to rotate relative to the component holder, or the component holder is configured to rotate relative to the first magnetron and the second magnetron, during coating of the component.

17. 1. A method for coating a component, comprising: positioning a component holder configured to hold the component within a coating chamber; positioning and orienting a first magnetron and a second magnetron within the coating chamber adjacent to a surface of the component held by the component holder; moving the component holder relative to the first and second magnetrons or moving the first and second magnetrons relative to the component holder while sputtering a coating from the first and second magnetrons onto the component; A method comprising:

18. 18. The method of claim 17, wherein moving the component holder relative to the first and second magnetrons or moving the first and second magnetrons relative to the component holder comprises changing an orientation of the first and second magnetrons with respect to the surface of the component held by the component holder as the component holder moves relative to the first and second magnetrons or as the first and second magnetrons move relative to the component holder.

19. The method of claim 17 , wherein the component holder is in a fixed position while the first magnetron and the second magnetron move relative to the component holder.

20. 20. The method of claim 19, wherein the first magnetron and the second magnetron operate while moving relative to the component holder.

21. Moving the component holder relative to the first magnetron and the second magnetron, or moving the first magnetron and the second magnetron relative to the component holder, may cause Al 2 O 3 , AlN, AlON, AlOF, Y 2 O 3 , YOF, YAG or YF 3 , Er 2 O 3 20. The method of claim 17, comprising depositing a film of ErOF, DLC or doped DLC, or a combination thereof.

22. 18. The method of claim 17, wherein the first magnetron and the second magnetron are operated with a power supply that provides bipolar pulses or are operated as individual magnetrons.

23. 18. The method of claim 17, further comprising performing deposition with a third magnetron and a fourth magnetron, wherein the component is a liner, the first magnetron and the second magnetron are positioned adjacent an inner surface of the liner, and the third magnetron and the fourth magnetron are positioned adjacent an outer surface of the liner.

24. The method of claim 17 , wherein the first magnetron and the second magnetron are mounted on a rotating assembly.

25. 25. The method of claim 24, wherein the component holder is attached to or is a rotating assembly.

26. The method of claim 17 , wherein the component holder extends through a wall of the coating chamber.

27. The method of claim 17 , wherein the component holder, together with the component, is at least a portion of a wall of the coating chamber.

28. 18. The method of claim 17, wherein moving the component holder relative to the first magnetron and the second magnetron, or moving the first magnetron and the second magnetron relative to the component holder, comprises rotating the component holder relative to the first magnetron and the second magnetron, or rotating the first magnetron and the second magnetron relative to the component holder.