Multi-pass spiral mixing tube for curvature compensation of an asymmetric wafer

Abstract

The device includes a stem body and internal flow paths. The stem body has a proximal end and a distal end. The proximal end includes inlets, each of which is distinct and configured to receive a corresponding gas(es). The distal end is on the opposite side of the proximal end along the longitudinal axis of the stem body and is configured to connect to a gas distributor. The distal end includes outlets, at least one of which is distinct. The internal flow paths include first and second internal flow paths. Each of the internal flow paths extends between a corresponding one of the inlets and at least one corresponding one of the outlets such that the internal flow paths are distinct from each other. Each of the internal flow paths includes a structure(s) configured to induce turbulent flow along the longitudinal axis in response to the flow of the corresponding gas(es) along that internal flow path.

Description

Background Art

[0001] [Incorporation by Reference] As part of this application, a PCT application is filed simultaneously with this specification. Each application identified within the simultaneously filed PCT application and for which this application claims benefit or priority is hereby incorporated by reference in its entirety for all purposes into this specification.

[0002] Semiconductor manufacturing typically involves one or more processes of depositing and patterning structures on a wafer. As the complexity and / or non-uniformity of structures and / or materials on or across the wafer increases, the stress applied to the wafer can cause deformations (e.g., curvature, twist, etc.) of the wafer that affect various aspects from structure formation to product yield. For example, in the fabrication of a three-dimensional NOT-AND logic gate (3D-NAND) structure, a thick and highly stressed carbon-based hard mask, a metallization pattern, and a multi-layer film with trenches in the substrate can cause significant warping of the wafer, leading to problems such as overlay misalignment in front-side lithography and wafer curvature exceeding the chucking limit of an electrostatic chuck.

[0003] The background description provided herein is for the purpose of generally presenting the content of the present disclosure. Aspects of the research of the inventors named at the present time, and descriptions that cannot be regarded as prior art at the time of filing, within the scope described in this background, are not recognized as prior art against the present disclosure, whether explicitly or implicitly.

Summary of the Invention

[0004] Details of one or more embodiments of the subject matter described herein are set forth in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the description, the drawings, and the claims. The following non-limiting embodiments are considered part of the present disclosure, and other embodiments will be apparent from the entire present disclosure and the accompanying drawings.

[0005] Some embodiments provide an apparatus that can provide one or more gases to a gas distributor (e.g., a showerhead, a showerhead pedestal, etc.) in separate states or in a partially mixed state.

[0006] Some embodiments provide an apparatus that can distribute one or more gases, such as one or more process gases (or reaction gases) and / or one or more dilution gases, to a region adjacent to (e.g., above or below) a substrate within a process chamber.

[0007] Additional aspects are described in the following detailed description, and will be apparent, in part, from the disclosure or can be learned by practice of the disclosed embodiments and / or the claimed subject matter.

[0008] According to one embodiment, the apparatus includes a stem body and a plurality of internal flow paths. The stem body includes a proximal end and a distal end. The proximal end includes a plurality of inlets. Each of the inlets is separate from each other and is configured to receive a corresponding one or more gases. The distal end is disposed on an opposite side of the proximal end along the longitudinal axis of the stem body. The distal end is configured to connect to a gas distributor of a deposition apparatus. The distal end includes a plurality of outlets. At least one of the outlets is separate from at least another one of the outlets. The plurality of internal flow paths includes a first internal flow path and a second internal flow path. Each of the internal flow paths extends between a corresponding one of the inlets and at least one corresponding outlet of the outlets such that the internal flow paths are separate from each other. Each of the internal flow paths includes one or more structures configured to induce turbulent flow along the longitudinal axis of the stem body in response to a flow of a corresponding one or more gases along that internal flow path.

[0009] In some embodiments, the inlet may include a first inlet and a second inlet. The axis of the first inlet may be spaced apart from the longitudinal axis of the stem body in a first direction. The first portion of the first internal flow path may extend longitudinally along the axis of the first inlet. The axis of the second inlet may be spaced apart from the longitudinal axis of the stem body in a second direction different from the first direction, and the first portion of the second internal flow path may extend longitudinally along the axis of the second inlet.

[0010] In some embodiments, one or more structures may define one or more second portions of the first internal flow path. Each of the second portions of the first internal flow path may be along a first helical path centered on the longitudinal axis of the stem body. Further, one or more structures may define one or more second portions of the second internal flow path. Each of the second portions of the second internal flow path may be along a second helical path centered on the longitudinal axis of the stem body.

[0011] In some embodiments, the first and second helical paths may be out of phase with each other such that each second portion of the second internal flow path intertwines with the corresponding second portion of the first internal flow path.

[0012] In some embodiments, one or more first structures may further define one or more third portions of the first internal flow path. Each of the third portions of the first internal flow path may extend linearly along the longitudinal axis of the stem body. Also, one or more second structures may further define one or more third portions of the second internal flow path. Each of the third portions of the second internal flow path may extend linearly along the longitudinal axis of the stem body.

[0013] In some embodiments, each of the third portions of the first internal flow path may be spaced apart from the longitudinal axis of the stem body in the second direction, and each of the third portions of the second internal flow path may be spaced apart from the longitudinal axis of the stem body in the first direction.

[0014] In some embodiments, each of the third portions of the first internal flow path may define a first chamber including at least one first collision protrusion that narrows the passage of the first internal flow path, and each of the third portions of the second internal flow path may define a second chamber including at least one second collision protrusion that narrows the passage of the second internal flow path.

[0015] In some embodiments, at least one first collision protrusion may extend along a first circumferential portion of the inner wall of the first chamber, and at least one second collision protrusion may extend along a second circumferential portion of the inner wall of the second chamber.

[0016] In some embodiments, a central reference plane may divide the first and second chambers into corresponding compartments, and the central reference plane may extend parallel to the longitudinal axis of the stem body and intersect the longitudinal axis of the stem body. Further, the first circumferential portion of the first chamber may be disposed on the opposite side of the central reference plane from the second circumferential portion of the second chamber.

[0017] In some embodiments, the first chamber may include a plurality of first collision protrusions, and the second chamber may include a plurality of second collision protrusions.

[0018] In some embodiments, one or more second portions of the first internal flow path may be alternately arranged with one or more third portions of the first internal flow path along the longitudinal axis of the stem body, and one or more second portions of the second internal flow path may be alternately arranged with one or more third portions of the second internal flow path along the longitudinal axis of the stem body.

[0019] In some embodiments, the first internal flow path may include four second portions and three third portions, and the second internal flow path may include four second portions and three third portions.

[0020] In some embodiments, three of the four second portions of the first internal flow path may include at least three rotations about the longitudinal axis of the stem body. One of the four second portions of the first internal flow path may include at least one rotation about the longitudinal axis of the stem body, and one of the four second portions of the first internal flow path may be closer to the distal end of the stem body than three of the four second portions of the first internal flow path. Three of the four second portions of the second internal flow path may include at least three rotations about the longitudinal axis of the stem body. One of the four second portions of the second internal flow path may include at least one rotation about the longitudinal axis of the stem body, and one of the four second portions of the second internal flow path may be closer to the distal end of the stem body than three of the four second portions of the second internal flow path.

[0021] In some embodiments, at least one of the outlets may define the outlet of the first internal flow path, and the fourth portion of the first internal flow path may extend longitudinally along the axis of at least one of the outlets. The axis of at least one of the outlets may extend along the longitudinal axis of the stem body.

[0022] In some embodiments, the axis of at least one of the outlets may be aligned coaxially with the longitudinal axis of the stem body.

[0023] In some embodiments, one or more structures may further define one or more fourth portions of the second internal flow path. Each of the fourth portions of the second internal flow path may surround the fourth portion of the first internal flow path. Each of the fourth portions of the second internal flow path may include an annular passage extending along the longitudinal axis of the stem body. Each annular passage may include a first end near the proximal end of the stem body and a second end near the distal end of the stem body. Each second end may terminate at a corresponding impact surface including a plurality of through-flow orifices extending along the longitudinal axis of the stem body. The corresponding plurality of through-flow orifices may be circumferentially spaced from each other about the longitudinal axis of the stem body.

[0024] In some embodiments, each annular passageway may be aligned coaxially with the longitudinal axis of the stem body.

[0025] In some embodiments, the second internal flow path may include a plurality of fourth portions axially disposed along the longitudinal axis of the stem body, and a first central axis of a through-flow path orifice of one of the plurality of fourth portions may be circumferentially offset from a second central axis of a through-flow path orifice of another of the plurality of fourth portions.

[0026] In some embodiments, the first central axis may be non-coincident with the second central axis.

[0027] In some embodiments, a through-flow path orifice of one of the fourth portions of the second internal flow path may define a plurality of outlets at the distal end of the stem body. The plurality of outlets may be separate from the outlet of the first internal flow path.

[0028] In some embodiments, the second internal flow path may include five fourth portions.

[0029] In some embodiments, the fourth portion of the first internal flow path may extend further from the proximal end of the stem body than each of the fourth portions of the second internal flow path.

[0030] In some embodiments, the stem body may be an additive manufacturing part, and the internal flow path may define a continuous void within the stem body.

[0031] In some embodiments, the stem body may be formed of an aluminum alloy.

[0032] In some embodiments, the internal flow paths may be fluidly isolated from each other within the stem body.

[0033] In some embodiments, the gas distributor is the showerhead pedestal of the deposition apparatus.

[0034] In some embodiments, the gas distributor is a showerhead of a deposition apparatus.

[0035] In some embodiments, the internal flow path may further include at least a third internal flow path.

[0036] According to one embodiment, the apparatus includes a showerhead. The showerhead includes a first surface, a second surface, and a stem body. The first surface includes a plurality of first inlets. The second surface faces the first surface. The second surface includes a plurality of gas distribution ports. The stem body includes a proximal end, a distal end, and a plurality of internal flow paths. The proximal end includes a plurality of second inlets. Each of the second inlets is separate from each other and is configured to receive one or more gases. The distal end is disposed on the opposite side of the proximal end along the longitudinal axis of the stem body. The distal end is coupled to the first surface of the showerhead. The distal end includes a plurality of outlets that connect to the plurality of first inlets. At least one of the outlets is separate from at least another one of the outlets. Each of the internal flow paths extends between a corresponding second inlet of the second inlets and at least one corresponding outlet of the outlets such that the internal flow paths are fluidly isolated from each other within the stem body. Each of the internal flow paths includes one or more structures configured to induce turbulent flow along the longitudinal axis of the stem body in response to the flow of one or more gases. A first internal flow path of the internal flow paths is fluidly connected to a first group of gas distribution ports. A second internal flow path of the internal flow paths is fluidly connected to a second group of gas distribution ports different from the first group.

[0037] In some embodiments, the showerhead may be a showerhead pedestal configured to support the substrate at or near its periphery such that the back surface of the substrate is substantially exposed to the plurality of gas distribution ports.

[0038] In some embodiments, the apparatus may further include a process chamber configured to support therein a first portion of the stem body and the showerhead. The process chamber may include an opening through which a second portion of the stem body extends to expose a proximal end.

[0039] According to one embodiment, the apparatus includes a body. The body includes a first surface and a second surface facing the first surface in a first direction. The first surface includes a plurality of gas distribution ports and is divided into a plurality of zones. The plurality of gas distribution ports includes a first group of gas distribution ports dispersed across a first zone of the zones, each first gas distribution port being fluidly connected via a corresponding first gas distribution flow path to one or more first gas inlets; a second group of gas distribution ports dispersed across a second zone of the zones, each second gas distribution port being fluidly connected via a corresponding second gas distribution flow path to one or more second gas inlets; and a third group of gas distribution ports dispersed across a third zone of the zones, each third gas distribution port being fluidly connected via a corresponding third gas distribution flow path to one or more of the third gas inlets. The first zone separates the second zone from the third zone. Within the body, the first gas distribution flow path is separated from each of the second and third gas distribution flow paths.

[0040] In some embodiments, one or more of the second gas inlets may also define one or more of the third gas inlets.

[0041] In some embodiments, the first gas distribution flow path may be configured to provide one or more first gases to a first gas distribution port such that the output of the one or more first gases from the first gas distribution port exhibits a first gas flow profile across the first zone, the second gas distribution flow path may be configured to provide one or more second gases to a second gas distribution port such that the output of the one or more second gases from the second gas distribution port exhibits a second gas flow profile across the second zone, the third gas distribution flow path may be configured to provide one or more second gases to a third gas distribution port such that the output of the one or more second gases from the third gas distribution port exhibits a third gas flow profile across the third zone, and the first, second, and third gas flow profiles may be different for the same inlet / outlet boundary conditions.

[0042] In some embodiments, the first gas flow profile may be substantially uniform, the second gas flow profile may vary in at least one direction across the second zone, and the third gas flow profile may vary in at least one direction across the third zone.

[0043] In some embodiments, each of the second and third gas flow profiles may increase as the distance from the first gas flow profile increases.

[0044] In some embodiments, each of the second and third zones may include a first arrangement of gas distribution ports having a first spatial relationship and a second arrangement of gas distribution ports having a second spatial relationship different from the first spatial relationship.

[0045] In some embodiments, the second spatial relationship may include gas distribution ports arranged more closely than in the first spatial relationship.

[0046] In some embodiments, the first gas distribution ports may be distributed across the first zone according to a first spatial arrangement.

[0047] In some embodiments, the first arrangement of the gas distribution ports may surround the second arrangement of the gas distribution ports.

[0048] In some embodiments, the second arrangement of the gas distribution ports may be closer to the periphery of the first surface than to the center of the first surface.

[0049] In some embodiments, the group of second gas distribution ports includes a first subgroup of second gas distribution ports dispersed across a first subzone of the second zone and a second subgroup of second gas distribution ports dispersed across a second subzone of the second zone, where the second subzone of the second zone is adjacent to the first subzone of the second zone. Further, the group of third gas distribution ports includes a first subgroup of third gas distribution ports dispersed across a first subzone of the third zone and a second subgroup of third gas distribution ports dispersed across a second subzone of the third zone, where the second subzone of the third zone is adjacent to the first subzone of the third zone.

[0050] In some embodiments, under the same inlet / outlet boundary conditions, the second gas distribution flow paths may be configured such that each respective flow conductance along each of these second gas distribution flow paths associated with the second subgroup of the second gas distribution ports is greater than each respective flow conductance along each of these second gas distribution flow paths associated with the first subgroup of the second gas distribution ports. Further, under the same inlet / outlet boundary conditions, the third gas distribution flow paths may be configured such that each respective flow conductance along each of these third gas distribution flow paths associated with the second subgroup of the third gas distribution ports is greater than each respective flow conductance along each of these third gas distribution flow paths associated with the first subgroup of the third gas distribution ports.

[0051] In some embodiments, the group of second gas distribution ports is a third subgroup of second gas distribution ports that are distributed across a third subzone of the second zone, where the third subzone of the second zone is between the first and second subzones of the second zone, and may further include a third subgroup of second gas distribution ports. Also, the group of third gas distribution ports is a third subgroup of third gas distribution ports that are distributed across a third subzone of the third zone, where the third subzone of the third zone is between the first and second subzones of the third zone, and may further include a third subgroup of third gas distribution ports.

[0052] In some embodiments, under the same inlet / outlet boundary conditions, the second gas distribution flow paths are configured such that the respective flow conductances along each of these second gas distribution flow paths associated with the third subgroup of second gas distribution ports are greater than the respective flow conductances along each of these second gas distribution flow paths associated with the first subgroup of second gas distribution ports and less than the respective flow conductances along each of these second gas distribution flow paths associated with the second subgroup of second gas distribution ports. Further, under the same inlet / outlet boundary conditions, the third gas distribution flow paths are configured such that the respective flow conductances along each of these third gas distribution flow paths associated with the third subgroup of third gas distribution ports are greater than the respective flow conductances along each of these third gas distribution flow paths associated with the first subgroup of third gas distribution ports and less than the respective flow conductances along each of these third gas distribution flow paths associated with the second subgroup of third gas distribution ports.

[0053] In some embodiments, the third subzone of the second zone may include a subportion configured such that a first plurality of second gas distribution ports of the third subgroup of the second gas distribution ports are different from a second plurality of second gas distribution ports of the third subgroup of the second gas distribution ports. Further, the third subzone of the third zone may include a subportion configured such that a first plurality of third gas distribution ports of the third subgroup of the third gas distribution ports are different from a second plurality of third gas distribution ports of the third subgroup of the third gas distribution ports.

[0054] In some embodiments, a first plurality of second gas distribution ports of the third subgroup of the second gas distribution ports may be arranged more densely than a second plurality of second gas distribution ports of the third subgroup of the second gas distribution ports. Also, a first plurality of third gas distribution ports of the third subgroup of the third gas distribution ports may be arranged more densely than a second plurality of third gas distribution ports of the third subgroup of the third gas distribution ports.

[0055] In some embodiments, the body includes a plurality of passages extending in a second direction different from the first direction, and the passages may be spaced apart from each other in a third direction different from the second direction. Further, each of the passages may be fluidly connected to a corresponding plurality of gas distribution ports.

[0056] In some embodiments, the cross-sectional area of each of the passages in a plane perpendicular to the second direction may be substantially equal.

[0057] In some embodiments, the cross-sectional area of at least one of the passages in a plane perpendicular to the second direction may be different from the cross-sectional area of at least another one of the passages in a plane perpendicular to the second direction.

[0058] In some embodiments, the corresponding pitch between adjacent passages among the passages may be substantially equal.

[0059] In some embodiments, the first plurality of passages may be arranged in a third direction at a first pitch, and the second plurality of passages may be arranged in the third direction at a second pitch different from the first pitch.

[0060] In some embodiments, the device may further include an outer wall surrounding the body. The body includes a third surface extending between a first surface and a second surface, a plurality of first blind cavities recessed in the third surface and arranged around the body, and a plurality of second blind cavities recessed in the third surface and arranged around the body. Each of the first blind cavities may be further arranged between the first surface and a corresponding one of the second blind cavities in a first direction. Further, a part of the third surface extending between the first blind cavity and the second blind cavity may form a partition wall. The partition wall may include a plurality of recesses in the third surface. Each of the recesses is arranged between corresponding ones of the first and second blind cavities adjacent to each other in the first direction, and together with the inner surface of the outer wall, may form respective gas flow paths fluidly connecting the corresponding ones of the first and second blind cavities.

[0061] In some embodiments, each of the first blind cavities may be fluidly connected to one or more of the passages.

[0062] In some embodiments, some of the passages may fluidly connect two of the first blind cavities to each other, and the two first blind cavities face each other with respect to the central axis of the body extending in the first direction.

[0063] In some embodiments, each of the first blind cavities in the first group of the first blind cavities may have a first opening region facing the inner surface of the outer wall, be fluidly connected to a first component of the passages, and each of the first blind cavities in the second group of the first blind cavities may have a second opening region facing the inner surface of the outer wall and be fluidly connected to a second component of the passages. The second opening area may be larger than the first opening area. The second component may be more than the first component.

[0064] In some embodiments, the device may further include a plurality of first elongated holes within the body that extend radially from a first central region of the body, and a plurality of second elongated holes within the body that extend radially from a second central region of the body. Each of the first elongated holes may have a corresponding proximal end fluidly connected to at least one of the one or more first inlets, and a corresponding distal end fluidly connected to one of the second blind cavities so as to form at least one corresponding portion of the first gas distribution flow path. Each of the second elongated holes may have a corresponding proximal end fluidly connected to at least one of the one or more second inlets and the one or more third inlets, and a corresponding distal end fluidly connected to one of the second blind cavities so as to form at least one corresponding portion of the second and third gas distribution flow paths.

[0065] In some embodiments, each of the first elongated holes may extend within a first planar region of the body, each of the second elongated holes may extend within a second planar region of the body that is different from the first planar region of the body, and the first planar region may be closer to the second surface of the body than the second planar region.

[0066] In some embodiments, each of the first and second planar regions may be closer to the second surface than each of the passages.

[0067] In some embodiments, the cross-sectional area of each of the first and second elongated holes may be equal in a corresponding plane perpendicular to the respective longitudinal direction of extension.

[0068] In some embodiments, the first group of second blind cavities may be physically and fluidly directly connected to the first elongated hole, may be separated from the second elongated hole inside the body, and the second group of second blind cavities may be physically and fluidly directly connected to the second elongated hole and may be separated from the first elongated hole inside the body. The second group of second blind cavities may include a first subgroup of second blind cavities, and each second blind cavity of the first subgroup of second blind cavities may be physically and fluidly directly connected to one distal end of the second elongated hole among the distal ends of the second elongated hole. The second group of second blind cavities may also include a second subgroup of second blind cavities, and each second blind cavity of the second subgroup of second blind cavities may be physically and fluidly directly connected to two distal ends of the second elongated hole among the distal ends of the second elongated hole.

[0069] In some embodiments, the first group of second blind cavities may be disposed within a first region of the body, the first subgroup of second blind cavities may be disposed within a second region of the body, and the second subgroup of second blind cavities may be disposed within a third region of the body. The second region of the body may be between the first region and the third region of the body.

[0070] In some embodiments, the second region may be disposed on both sides of the first region, and the third region may be disposed on both sides of the second region and on both sides of the first region.

[0071] In some embodiments, each of the first elongated holes may have a substantially equal first cross-sectional area in a plane perpendicular to its respective direction of longitudinal extension, each second elongated hole associated with the first subgroup of second blind cavities may have a substantially equal second cross-sectional area in a plane perpendicular to its respective direction of longitudinal extension, each second elongated hole associated with the second subgroup of second blind cavities may have a substantially equal third cross-sectional area in a plane perpendicular to its respective direction of longitudinal extension, and the first, second, and third cross-sectional areas may be different from each other.

[0072] In some embodiments, the third cross-sectional area may be larger than the second cross-sectional area, and the second cross-sectional area may be larger than the first cross-sectional area.

[0073] In some embodiments, the apparatus may further include a cooling conduit thermally coupled to the body. The cooling conduit may have an inlet configured to receive clean dry air (CDA) at a first temperature and an outlet configured to output CDA at a second temperature different from the first temperature. The body may include a first groove recessed in the second surface. A portion of the cooling conduit may extend within the first groove.

[0074] In some embodiments, the first cap structure may enclose the cooling conduit within the first groove in a compressed state.

[0075] In some embodiments, the cooling conduit may be formed of stainless steel.

[0076] In some embodiments, the cooling conduit may be sized to enable a CDA flow rate of up to about 140 standard liters per minute at Reynolds numbers exceeding about 2500.

[0077] In some embodiments, the apparatus may further include a resistive heating element. The body may further include a second groove recessed in the second surface. A portion of the resistive heating element may extend within the second groove.

[0078] In some embodiments, in a first direction, the second groove may extend deeper into the second surface than the first groove. Also, in a radial direction perpendicular to the first direction, an outermost portion of the second groove may be closer to the periphery of the body than an outermost portion of the first groove.

[0079] In some embodiments, the apparatus may further include a process chamber configured to support the body therein. The body may form part of a showerhead.

[0080] In some embodiments, the showerhead may be a showerhead pedestal configured to support the substrate such that most of the back surface of the substrate is exposed to a plurality of gas distribution ports.

[0081] In some embodiments, the body may be formed of an aluminum alloy.

[0082] The foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the claimed subject matter.

Brief Description of the Drawings

[0083] The various embodiments disclosed herein are shown by way of example and not by way of limitation in the accompanying drawings, in which like reference numerals refer to like elements.

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DETAILED DESCRIPTION OF THE INVENTION

[0113] In the following description, numerous specific details are set forth in order to provide a thorough understanding of various embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail so as not to unnecessarily obscure the disclosed embodiments. The disclosed embodiments are described in conjunction with specific embodiments, but it is understood that the disclosed embodiments are not intended to be limiting.

[0114] In this application, the terms "semiconductor wafer", "wafer", "substrate", "wafer substrate", and "partially fabricated integrated circuit" are used interchangeably. One of ordinary skill in the art will understand that the term "partially fabricated integrated circuit" can refer to a silicon wafer that is at any of the multiple stages of integrated circuit fabrication thereon. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm, or 300 mm, or 450 mm. In addition to semiconductor wafers, other workpieces on which the disclosed embodiments can be utilized include various articles such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical elements, microelectromechanical devices, and the like.

[0115] Semiconductor manufacturing processes involve the formation of various structures, many of which can be two-dimensional. As the dimensions of semiconductor devices are reduced and the devices are miniaturized, the density of features across the entire semiconductor substrate increases, and the layers of materials are etched and deposited in various ways that include three dimensions. For example, 3D-NAND structures are becoming an increasingly popular technology because they are low-cost and have high memory density compared to other technologies such as two-dimensional (2D)-NAND structures, and are reliable in various applications. During the fabrication of 3D-NAND structures, the curvature of the wafer can change significantly. For example, when fabricating a 3D-NAND structure, depositing a thick hard mask material and etching trenches along the wafer surface can cause the wafer to curve. When film layers are stacked during fabrication, greater stress is applied to the semiconductor wafer, which can cause curvature. Furthermore, the stress fields along different axes of the wafer are becoming increasingly non-uniform, which can lead to various curved shapes.

[0116] Curvature can be measured using optical techniques. The curvature of a wafer can be measured or evaluated by obtaining a wafer map or a stress map. Curvature can be quantified using curvature values and / or warpage values as described herein. Generally, for a "wafer curvature value", the deviation from a reference plane defined by the three corners of an equilateral triangle having a base that is a specified amount smaller than the nominal diameter of the wafer, measured from the center point of the central plane of a freely clamped, unclamped wafer, is measured in accordance with American Society for Testing and Materials (ASTM) F534 standard. A "wafer warpage value" is the difference between the maximum distance and the minimum distance from the reference plane of the central plane of a freely clamped, unclamped wafer, in accordance with ASTM F657 standard and ASTM F1390 standard. However, it should be noted that the warpage value can be expressed along one or more axes. For example, a wafer warped asymmetrically can have a warp in the x-axis and / or a warp in the y-axis. Furthermore, "wafer flatness" is a measure of the deviation of the front surface of the wafer from a specified reference plane when the back surface of the wafer is ideally flat, as measured in accordance with ASTM F1530 standard, and is expressed as the total indicator reading or the maximum focal plane deviation.

[0117] In a bow-shaped wafer, the lowest point is the center of the wafer, and the highest point is the edge of the wafer. In a dome-shaped wafer, the lowest point is the edge of the wafer, and the highest point is the center of the wafer. Bow-shaped and dome-shaped wafers have symmetric or mostly symmetric curvatures. The wafer may have an asymmetric curvature. In an asymmetric curvature, the warp is measured along the x-axis and the y-axis. An asymmetrically curved wafer has different values for the warp along the x-axis and the y-axis. In some cases, an asymmetrically curved wafer has a negative warp along the x-axis and a positive warp along the y-axis. In some cases, an asymmetrically curved wafer has a positive warp along the x-axis and a negative warp along the y-axis. In some cases, an asymmetrically curved wafer has both a positive warp along the x-axis and a positive warp along the y-axis, but the warp values are different. In some cases, an asymmetrically curved wafer has both a negative warp along the x-axis and a negative warp along the y-axis, but the warp values are different. An example of an asymmetrically curved wafer is a saddle-shaped wafer. In the case of a saddle-shaped wafer, for example, the warp along the x-axis may be +200 μm, and the warp along the y-axis may be -200 μm. A saddle-shaped wafer has two opposite edges of the wafer curved upward, while the other two opposite edges of the wafer are curved downward. As used herein, warp can refer to any deviation from the planarity exhibited by the wafer, and bow-shaped wafers, dome-shaped wafers, and saddle-shaped wafers are examples of different types of substrate warps.

[0118] Since warping of the semiconductor substrate can cause non-uniform etching, the curvature can cause problems in subsequent processes such as lithography. Large curvatures can be caused by the deposition of thick and highly stressed carbon hard mask layer(s). Additionally, due to the presence of multi-layer stack films and thick and highly stressed carbon-based hard masks used in such fabrication processes, the etching can cause some asymmetric warping, and the deposition process can result in wafer warping with large curvature variations of up to -1300 μm to 1300 μm. For example, an ashing-capable hard mask can have a stress value of up to -1000 MPa and a curvature value of up to -1000 μm. In some cases, high aspect ratio slit etching and metal filling (e.g., tungsten filling) can cause large anisotropic stresses on the semiconductor substrate.

[0119] Addressing such wafer warpage can be a challenge, for example, because subsequent or downstream processes can be affected by wafer warpage exceeding, for example, about ±150 μm, about ±200 μm, about ±300 μm, or about ±500 μm. However, as the process becomes more sensitive to the wafer topology, it has been recognized that even a small degree of wafer warpage may need to be addressed. As an example of a problem, mechanical wafer handling can be affected by wafer warpage, and non-flat wafers may not be effectively gripped or held by a wafer robot or wafer handling mechanism. In addition, wafer warpage can contribute to process non-uniformity, and non-uniformity in the processing across the wafer surface can adversely affect downstream etching, deposition, or cleaning operations. For example, wafer warpage can lead to poor thermal contact, which can cause non-uniform heating of the wafer and, in turn, non-uniform processing of the wafer. In some cases, processing a highly warped wafer can cause further warping. For example, etching trenches in one direction can cause an asymmetrically curved warp due to asymmetric stress on the wafer. Additionally, lithography operations can be adversely affected by wafer warpage because accurate patterns cannot be formed. When using the wafer in subsequent processes involving chucking the wafer to an electrostatic chuck, a highly warped wafer may not be processable by some tools. Many electrostatic chucks have a "chucking limit," which is defined as the maximum warp allowed before the wafer cannot be effectively chucked. For example, some electrostatic chucks have a chucking limit of about ±300 μm. In such an example, a wafer warped beyond the chucking limit may not be processed.

[0120] FIG. 1 schematically shows a perspective view of a curved semiconductor substrate exhibiting an asymmetric curvature.

[0121] Referring to FIG. 1, the substrate 101 is shown relative to a three-dimensional coordinate system having a reference plane 103 parallel to a plane defined by the x-axis direction and the y-axis direction. In this way, the degree of deformation (e.g., warpage) of the substrate 101 from the reference plane 103 is shown along the u-axis direction. Thus, the substrate 101 is shown to be curved asymmetrically. In other words, the degree of curvature of the substrate 101 along the x-axis direction is different from the degree of curvature of the substrate 101 along the y-axis direction. For example, the warp in the x-axis direction reaches a first positive value, the warp in the y-axis direction reaches a second negative value, and the magnitude of the second negative value is greater than the magnitude of the first positive value. Such deformation of the substrate 101 can be referred to as a "saddle-shaped" curvature of the substrate 101. As used herein, warp refers to any deviation of the central plane of the substrate 101 from the reference plane 103 and thus from planarity.

[0122] As the 3D-NAND structure continues to scale up and high aspect ratio features become increasingly common, new challenges related to fluctuations in local stress and die-to-die stress on the semiconductor substrate have emerged. Fluctuations in local stress and die-to-die stress can lead to block bending, cell crosstalk, cell loss, and / or misalignment of cells. Local stress refers to a change in stress that occurs within the wafer in a non-uniform manner. Insufficient compensation / correction of local stress can lead to changes in local wafer topology and, consequently, misalignment during lithography. Such misalignment is typically viewed from the perspective of in-plane distortion (IPD), which is a quantification of the vector displacement of alignment marks on the wafer from their expected positions due to wafer topology. High IPD during lithography can lead to undesired changes in critical dimensions or any other features defined in the lithography process, resulting in the above-mentioned phenomena such as block bending, cell crosstalk, cell loss, and / or misalignment of cells being caused by lithography errors.

[0123] Figures 2A - 2C schematically show various views of a substrate showing an asymmetric curvature. For example, FIG. 2A schematically shows a plan view of substrate 201, while FIGS. 2B and 2C schematically show cross-sectional views of substrate 201 taken along cross-section lines 2B - 2B and 2C - 2C, respectively. As seen in FIG. 2A, substrate 201 may include various features (e.g., metallization pattern 203) formed on front surface 205 that at least partially cause substrate 201 to be asymmetrically curved. For purposes of illustration, the formation of features on front surface 205 of substrate 201 is not shown in FIGS. 2B and 2C. As can be understood from FIGS. 2B and 2C, substrate 201 shows a parabolic curvature along the x-axis direction and an opposite parabolic curvature along the y-axis direction, and the combination of these can result in a saddle-shaped curvature similar to that of substrate 101 in FIG. 1.

[0124] To address the curvature of substrates such as substrate 201, various techniques can be employed. For example, one or more stress compensation layers may be formed on the back surface of a semiconductor substrate such as back surface 207. The use of a back surface stress compensation layer has typically been limited to reducing monotonic overall wafer warpage. In other words, techniques for addressing the curvature of semiconductor substrates are usually limited to those that address axisymmetric or multi-axisymmetric curvature profiles. In some cases, the use of masks or precursor zoning techniques during layer formation to form a back surface stress compensation layer can address asymmetric curvature. For example, the adjustment of local stress can be achieved by feeding a precursor material to specific regions or areas of an asymmetrically curved substrate, for example, using a carrier mask. In other examples, the adjustment of local stress can be achieved using precursor zoning that controls the supply of gas to different positions using multiple plenums. However, such techniques have also had some problems associated with high IPD overlay and chucking of curved substrates, and have had limited success. Such problems can be the result of a sharp change in film stress between zones and the difficulty of designing a zone layout that minimizes local topography variations.

[0125] Accordingly, one or more embodiments are directed to providing a method and apparatus for reducing asymmetric curvature of a substrate via backside deposition. Precursors from a gas distributor (e.g., a showerhead, a showerhead pedestal, etc.) can be controlled to provide a desired thickness profile to one or more films deposited on the backside of the substrate. The one or more deposited films can be utilized to jointly form a stress compensation layer. The stress profile of the stress compensation layer can be characterized by a polynomial function. In this way, the stress compensation layer can reduce or even eliminate local stresses within an asymmetrically curved substrate. In some embodiments, the stress compensation layer can be formed by a film stack approach that deposits multiple films having different thickness profiles. In some embodiments, a combination of a compressive film having a non-linear thickness profile and a tensile film having a different non-linear thickness profile may be deposited on the backside of the curved substrate. For example, the compressive film may have a first parabolic profile, and the tensile film may have a second parabolic profile that opens in the opposite direction of the first parabolic profile. In this way, the compressive film and the tensile film can be jointly used to form a stress compensation layer. In some cases, the stress compensation layer may be flat or substantially flat. Such film stack techniques via backside deposition can be utilized to minimize (or at least reduce) IPD overlay issues without affecting the ability to chuck the substrate.

[0126] Adjustment of the thickness of one or more films within the stress compensation layer can be achieved by controlling the concentration of precursors and diluent gases proximate to (or adjacent to) the substrate during one or more deposition operations. According to various embodiments, the concentration of precursors and diluent gases adjacent to the substrate can be controlled by design features of the gas distributor. Such design features can affect the hydrodynamics of the precursor gas and diluent gas from the gas distributor. In one embodiment, the gas distributor may be divided into a plurality of gas distribution groups (or zones). For example, one or more precursor gases may be fed to (and thus delivered from) one or more first zones, and one or more diluent gases may be fed to (and thus supplied from) one or more second zones. In some cases, the gas output from one zone (or the gas flow profile across one zone) may be uniform (or substantially uniform), and the gas output from one or more other zones may be non-uniform, e.g., exhibiting a gradient, such as a parabolic gradient that increases as the distance from one zone increases, or a non-linear gradient that increases as the distance from one zone increases. The term "uniform" as used herein with respect to gas flow and gas flow profiles refers to a gas flow or gas flow profile that is substantially uniform or similar. Such a gas flow or gas flow profile may include minor variations or deviations due to various local effects, but would still be generally recognized as uniform. For this reason, the various gas flow profiles referred to herein may be considered to be affected by the structure(s) of the gas distributor, and are thus understood to occur under the same inlet / outlet boundary conditions, e.g., pressure, temperature, etc. In some cases, the gas output from one or more other zones may exhibit a stepwise gradient that increases as the distance from one zone increases, or any other suitable gas output profile. According to some embodiments, the integrated gas flow profile of all gas distribution ports may exhibit mirror symmetry about an axis, but not three-fold or higher rotational symmetry. Such multi-zone flow control can be utilized to adjust the concentration of precursors and diluent gases adjacent to the substrate during layer formation.In addition, one or more primary zones can include one or more subzones, and one or more subzones, in some embodiments, may be considered to include one or more sub - portions for further adjusting the concentration (or, hydrodynamics) of the precursor and dilution gas adjacent to the substrate, such as the hydrodynamics near the edge of the substrate. This can be achieved via different gas distribution port patterns (e.g., position, density, port size, etc.) between the primary zone, subzone, and / or sub - portions of the subzone. Additionally, or alternatively, different gas distribution flow paths (e.g., size, amount, flow conductance, etc.) for supplying one or more precursor gases or one or more dilution gases to different zones, subzones, and / or sub - portions of the subzone can be utilized to adjust the concentration (or, hydrodynamics) of the precursor and dilution gas adjacent to the substrate.

[0127] Figure 3 is a flowchart of a process for reducing the curvature of an asymmetric wafer according to some embodiments. Figures 4A, 4B1, 4B2, and 4C schematically illustrate various stages of forming a stress - compensating layer for reducing the curvature of an asymmetric wafer in accordance with some embodiments. Process 300 may be performed in a different order and / or may be performed using different, fewer, or additional operations. The operations of Process 300 are described in relation to the various stages of forming the stress - compensating layer shown in Figures 4A - 4C. Further, the operations of Process 300 can be performed using an apparatus for film deposition, such as the apparatus described in relation to one or more of Figures 7A, 7B, 8, 9A - 9C, 10, 11, 12A - 12C, 13 - 16, 18A, 18B, 19, 20, 21A, 21B, and 22 - 30. In some embodiments, the operations of Process 300 can be performed at least in part according to software stored on one or more non - transitory computer - readable media.

[0128] In block 301, a substrate showing an asymmetric curvature can be loaded, at least partially, into a deposition apparatus such as an apparatus configured to deposit a material on the back surface of the substrate. The stress profile acting on the substrate may include one or more compressive regions and / or one or more tensile regions unevenly applied to the substrate. Generally, the tensile stress applied across the substrate induces a warp with a positive value and causes, at least partially, a concave bend of the substrate. The compressive stress applied across the substrate induces a warp with a negative value and causes, at least partially, a convex bend of the substrate. Due to various combinations of tensile and compressive stresses across the substrate, the substrate may include a surface (e.g., a central surface) deviating from a reference plane representing a planar configuration otherwise. In some cases, the warp of the substrate may exceed ±300 μm. Further, the asymmetric curvature may result in a saddle-shaped or inverse saddle-shaped substrate.

[0129] The substrate may be a silicon wafer such as a 200 mm wafer, a 300 mm wafer, a 450 mm wafer, etc., and includes one or more layers of materials such as a dielectric, a conductor, and / or a semiconductor material deposited on the front surface of the substrate. A part of the one or more layers may be patterned. Non-limiting examples of the layers include dielectric layers and conductive layers such as silicon oxide, silicon nitride, silicon carbide, metal oxide, metal nitride, metal carbide, and metal layers. In some cases, the substrate itself may be patterned. For example, the substrate can include a 3D-NAND structure having one or more trenches formed (e.g., etched) in the substrate. Thus, one or more compressive regions and one or more tensile regions of the stress profile may result from, for example, one or more layers of materials on the substrate, one or more patterns in the one or more layers, one or more trenches in the substrate, etc.

[0130] The substrate may exhibit warpage such as a warp of about ±1000 μm. In some cases, the substrate may have a warp exceeding about ±300 μm. In some cases, the substrate has a warp exceeding about ±300 μm and less than about ±1000 μm. The warp may occur in one or more regions of the substrate. For this reason, the warp may have different values (or profiles) along the x-axis direction and the y-axis direction. The warp may be a result of an anisotropic stress distribution within the substrate.

[0131] As used herein, a tensile region generates a tensile stress that induces a warp with a positive value. The tensile region causes a concave bend of the substrate. As used herein, a compression region generates a compressive stress that induces a warp with a negative value. The compression region causes a convex bend of the substrate. One or more compression regions and one or more tensile regions may be due to, for example, one or more layers of material on the substrate, one or more patterns within one or more layers, one or more trenches within the substrate, and the like.

[0132] In some embodiments, there is compressive stress at the center of the substrate and tensile stress at at least two opposing ends of the substrate. In some cases, there is tensile stress at the center of the substrate and compressive stress at at least two opposing ends of the substrate. The stress profile of the substrate in the x-axis direction may be described by a parabolic function or other non-linear function. The stress profile of the substrate in the y-axis direction may be described by a parabolic function or other non-linear function. For this reason, the stress profile in the x-axis direction may be described by a polynomial function, and the stress profile in the y-axis direction may be described by a polynomial function.

[0133] According to some embodiments, the substrate is provided, at least in part, within a process chamber (e.g., chamber 2903 of FIG. 29) for performing a deposition operation. The process chamber can be configured for deposition on the back surface and / or the front surface. In some embodiments, deposition on the back surface can be achieved by feeding a process gas from a lower showerhead of the process chamber, such as a showerhead pedestal, to the back surface of the substrate. In some embodiments, the back surface of the substrate is not patterned. As generally described herein, the showerhead refers to a showerhead pedestal for feeding gas to the back surface of the substrate.

[0134] FIG. 4A schematically shows a cross-sectional view of a substrate showing an asymmetric curvature. Although not visibly shown, substrate 401 is curved. The front surface 401a of substrate 401 may be patterned with a structure that provides an anisotropic stress distribution within substrate 401. The anisotropic stress distribution can be characterized by a polynomial function, such as a parabola function, in one or both of the x-axis direction and the y-axis direction when the x-axis direction and the y-axis direction define a reference plane of substrate 401. Substrate 401 may be asymmetrically curved. For example, substrate 401 may exhibit a saddle-shaped curvature. In some cases, substrate 401 may have a warp of about +300 μm or more or about -300 μm or less in one or both of the x-axis direction and the y-axis direction. Substrate 401 can be provided, at least in part, within a deposition process chamber, such as a process chamber for back surface deposition.

[0135] Returning to FIG. 3, in block 303, a first gas flow configuration from the showerhead pedestal is utilized to deposit, at least in part, a first film on the back surface 401b of substrate 401. The first film has, at least in part, a first non-linear thickness profile on the back surface 401b of substrate 401.

[0136] According to one embodiment, the first film is a compression film, which is a thin film having a unique compressive stress. The compression film may have a unique compressive stress such as a negative stress value of up to -4000 MPa. The thickness profile is presented along the axial direction of the film (e.g., the x-axis direction or the y-axis direction). The non-linear thickness profile is characterized by any deviation from the linearity of the film along the axial direction. The non-linear thickness profile may be characterized by a parabolic function or other polynomial functions. For example, the non-linear thickness profile may be a first parabolic-shaped profile that opens upward or downward. When the first parabolic-shaped profile opens upward, the compression film is thicker at the edge of the substrate 401 and gradually thinner at the center of the substrate 401. When the first parabolic-shaped profile opens downward, the compression film is thicker at the center of the substrate 401 and gradually thinner at the edge. Depending on the warp of the substrate 401, the compression film may have a non-linear thickness profile in one or both of the x-axis direction and the y-axis direction.

[0137] The deposition of the compression film according to the non-linear thickness profile can be performed by controlling the concentration of the precursor and / or the dilution gas from the showerhead pedestal. The concentration of the precursor and / or the dilution gas can be controlled to vary across the back surface 401b of the substrate 401. For example, the thickness control can be achieved by controlling the concentration of the precursor and / or the dilution gas adjacent to the back surface 401b of the substrate 401 during deposition. More precursor is flowed through the compression region(s) for depositing the compression film. Less or no precursor is flowed through the tension region(s) for depositing the compression film. The control of the precursor concentration varying across the back surface 401b of the substrate 401 can be performed by affecting the hydrodynamics from the showerhead pedestal. The concentration of the precursor and / or the dilution gas can vary along one or both of the x-axis direction and the y-axis direction of the substrate 401.

[0138] In some embodiments, the compression film can be a compressed silicon oxide, compressed silicon nitride, compressed silicon, or compressed carbon film, but the embodiments are not limited thereto. For example, in some embodiments, the compression film is a compressed silicon oxide film or a compressed silicon nitride film. By selecting the precursor gas, dilution gas, and process conditions, the stress of the compression film can be adjusted. In some embodiments, the compression film is deposited on the back surface 401b of the substrate 401 using any suitable deposition technique such as plasma enhanced chemical vapor deposition (PECVD), chemical vapor deposition (CVD), plasma enhanced atomic layer deposition (PEALD), or atomic layer deposition (ALD). For example, the compression film may be deposited at least in part using PECVD.

[0139] As used herein, "silicon oxide" includes compounds containing silicon atoms and oxygen atoms, including all stoichiometric possibilities of Si with integer values of x and y, as well as non-integer values of x and y. x O y Furthermore, "silicon nitride" as used herein refers to all stoichiometric possibilities of Si with integer values of x and y, as well as non-integer values of x and y, including, for example, the ratio X:Y can be 3:4. x N y In some embodiments, the compressed silicon oxide film may be deposited using a mixture of a silicon-containing precursor and an oxygen-containing reactant. Examples of silicon-containing precursors include, but are not limited to, silane and tetraethyl orthosilicate (TEOS). Examples of oxygen-containing reactants include, but are not limited to, oxygen and nitrous oxide. In PECVD, the silicon-containing precursor reacts with the oxygen-containing reactant exposed to plasma to form a compressed silicon oxide film. An inert gas such as helium may be present.

[0140] In some embodiments, the compressed silicon oxide film may be deposited using a mixture of a silicon-containing precursor and an oxygen-containing reactant. Examples of silicon-containing precursors include, but are not limited to, silane and tetraethyl orthosilicate (TEOS). Examples of oxygen-containing reactants include, but are not limited to, oxygen and nitrous oxide. In PECVD, the silicon-containing precursor reacts with the oxygen-containing reactant exposed to plasma to form a compressed silicon oxide film. An inert gas such as helium may be present.

[0141] According to some embodiments, the compressive silicon nitride film can be deposited using a mixture of a silicon-containing precursor and a nitrogen-containing reactant. Examples of silicon-containing precursors include, but are not limited to, silane and TEOS. Examples of nitrogen-containing reactants include, but are not limited to, nitrogen and ammonia. In PECVD, the silicon-containing precursor can react with the nitrogen-containing reactant exposed to the plasma to form a compressive silicon nitride film. An inert gas such as helium may be present.

[0142] The selection of the silicon-containing precursor and reactant, as well as the type of plasma (dual-frequency or single-frequency) and process conditions, can affect the stress of the deposited film. In some embodiments, the stress can be adjusted by the flow rate of the silicon-containing precursor relative to other gases flowing during deposition. For example, in the deposition of compressive silicon nitride, as the silane flow increases, the stress decreases, which can reduce the compressibility of the compressive silicon nitride film. Thus, in some embodiments, as the silane flow increases, the compressibility of the deposited film decreases, and in some embodiments, the substrate temperature can be adjusted to adjust the stress of the compressive film. For example, a higher temperature may be used to achieve a higher stress or enhance the stability of the deposited film. In some embodiments, the substrate temperature for deposition on the back surface 401b of the substrate 401 is about 200°C or higher and 650°C or lower.

[0143] According to some embodiments, the compressive film can be used to compensate for one or more compressive regions of the substrate 401. In some embodiments, the thickness of the compressive film can vary based on the position on the substrate 401. For example, the thickness of the compressive film at any given position can be 0 nm or more and about 2000 nm or less. For this purpose, the average thickness of the compressive film can be about 1000 nm, but the embodiments are not limited thereto. The thickness of the compressive film affects the curvature of the wafer of the compressive film and can compensate for the asymmetric curvature of the substrate 401. Thus, the non-linear thickness profile of the compressive film realizes the desired wafer curvature to compensate for one or more compressive regions of the substrate 401.

[0144] FIG. 4B1 schematically shows a cross-sectional view of a compression film 403 having a parabolic thickness profile deposited on the back surface 401b of a substrate 401. The compression film 403 may be deposited, at least in part, by PECVD. The compression film 403 can be a compressed silicon oxide film, a compressed silicon nitride film, a compressed silicon film, a compressed carbon film, or the like. The compression film 403 can be thicker at the center of the substrate 401 than at the opposing edges of the substrate 401. Although the compression film 403 is shown as having a parabolic thickness profile, the thickness profile may coincide or substantially coincide with a polynomial function, such as a quadratic or cubic polynomial function. The parabolic thickness profile of the compression film 403 opens downward. The parabolic thickness profile of the compression film 403 is illustrated along the x-axis direction or the y-axis direction.

[0145] According to some embodiments, the first film can be a tensile film having a second non-linear thickness profile on the back surface 401b of the substrate 401. A tensile film refers to a thin film having a unique tensile stress. The tensile film can have a unique tensile stress, such as a positive stress value of up to +4000 MPa. The non-linear thickness profile can be characterized by a parabola function or other polynomial function. Depending on the warp of the substrate 401, the tensile film can have a non-linear thickness profile in one or both of the x-axis direction and the y-axis direction. In some embodiments, the non-linear thickness profile can be a second parabolic profile that opens downward or upward. In some embodiments, the second parabolic profile opens in a direction opposite to the first parabolic profile.

[0146] Deposition of a tensile film according to a non-linear thickness profile can be performed by controlling the concentration of the precursor and / or dilution gas from the showerhead pedestal. The concentration of the precursor and / or dilution gas can be controlled to vary across the back surface 401b of the substrate 401. For example, thickness control can be achieved by controlling the concentration of the precursor and / or dilution gas adjacent to the back surface 401b of the substrate 401 during deposition. The precursor for depositing the tensile film may be flowed more in the tensile region(s), and the precursor for depositing the tensile film may be flowed less or not at all in the compression region(s). Note that control of the concentration of the precursor and / or dilution gas varying across the back surface 401b of the substrate 401 can be done by affecting the hydrodynamics from the showerhead pedestal. For this purpose, the concentration of the precursor and / or dilution gas can vary along one or both of the x-axis direction and the y-axis direction of the substrate 401.

[0147] In some embodiments, the tensile film can be a tensile silicon oxide film, a tensile silicon nitride film, a tensile silicon film, a tensile carbon film, etc. For example, the tensile film can be a tensile silicon oxide film or a tensile silicon nitride film. By selecting the precursor, dilution gas, and process conditions, the stress of the tensile film can be adjusted. In some embodiments, the tensile film is deposited on the back surface 401b of the substrate 401 using any suitable deposition technique such as PECVD, CVD, PEALD, or ALD. For example, the tensile film may be deposited at least partially using PECVD.

[0148] In some embodiments, the tensile silicon oxide film can be deposited using a mixture of a silicon-containing precursor and an oxygen-containing reactant. In PECVD, the silicon-containing precursor reacts with the oxygen-containing reactant exposed to plasma to form a tensile silicon oxide film. An inert gas such as helium may be present.

[0149] In some embodiments, the tensile silicon nitride film can be deposited using a mixture of a silicon-containing precursor and a nitrogen-containing reactant. In PECVD, the silicon-containing precursor can react with the nitrogen-containing reactant exposed to the plasma to form a tensile silicon nitride film. An inert gas such as helium may be present.

[0150] The selection of the silicon-containing precursor and reactant, as well as the type of plasma (dual-frequency or single-frequency) and process conditions, can affect the stress of the deposited film. In some embodiments, the stress can be adjusted by the flow rate of the silicon-containing precursor relative to other gases flowing during deposition. In some embodiments, the substrate temperature can be adjusted to adjust the stress of the tensile film. For example, a higher temperature may be used to achieve a higher stress or to enhance the stability of the deposited film. In some embodiments, the substrate temperature for deposition on the back surface 401b of the substrate 401 is about 200 °C or higher and 650 °C or lower. However, the embodiments are not limited thereto.

[0151] The tensile film can be used to compensate for one or more tensile regions of the substrate 401. In some embodiments, the thickness of the tensile film can vary based on the position on the substrate 401. For example, the thickness of the tensile film at any given position can be 0 nm or more and about 2000 nm or less. For this purpose, the average thickness of the tensile film can be about 1000 nm, but the embodiments are not limited thereto. The thickness of the tensile film affects the curvature of the wafer of the tensile film and can compensate for the asymmetric curvature of the substrate 401. Thus, the non-linear thickness profile of the tensile film achieves the desired wafer curvature to compensate for one or more tensile regions of the substrate 401.

[0152] FIG. 4B2 schematically shows a cross-sectional view of a tensile film 405 having a parabolic thickness profile deposited on the back surface 401b of a substrate 401. The tensile film 405 may be deposited by PECVD. The tensile film 405 can be a tensile silicon oxide film, a tensile silicon nitride film, a tensile silicon film, a tensile carbon film, or the like. In some cases, the tensile film 405 may be thicker at the opposing edges of the substrate 401 than at the center of the substrate 401. Although the tensile film 405 is shown as having a parabolic thickness profile, the thickness profile may coincide with or substantially coincide with a polynomial function, such as a quadratic or cubic polynomial function. The parabolic thickness profile of the tensile film 405 opens upward. The parabolic thickness profile of the tensile film 405 is illustrated along the x-axis direction or the y-axis direction.

[0153] Returning to FIG. 3, in block 305, the substrate 401 including the first film formed on the back surface 401b can be optionally rotated by a predetermined amount, at least partially, before forming another film on the first film. For example, the substrate 401 can be rotated at least partially by a rotation of greater than about 0° and less than about 180°, such as a rotation of greater than about 30° and less than about 150°, for example, a rotation of greater than about 60° and less than about 120°, for example, a rotation of greater than about 80° and less than about 100°. In one embodiment, the substrate 401 can be rotated at least partially by only about 90°. However, it should be noted that any other suitable rotation can be utilized.

[0154] According to some embodiments, the rotation of the substrate 401 can be achieved manually or via one or more automated methods. For example, the substrate 401 can be removed from the processing chamber, rotated using an external aligner, and then returned to and loaded into the processing chamber. In some embodiments, the substrate 401 can be rotated within the processing chamber via the rotation of a support structure, such as a susceptor, a showerhead pedestal, or the like. Also, it is contemplated that the substrate 401 can be rotated within the processing chamber via a spin indexer, a spider fork, or any other suitable wafer transfer robot.

[0155] In block 307, at least partially, a second film is formed on the first film using a second gas flow configuration that is different from the first gas flow configuration. In some embodiments, as will become more apparent below, the second gas flow configuration may be opposite to the first gas flow configuration. However, it should be noted that the first gas flow configuration may include one or more process gases flowing into the first zone of the showerhead pedestal and one or more dilution gases flowing into the second and third zones of the showerhead pedestal located on both sides of the first zone. In this way, the second gas flow configuration may include one or more dilution gases flowing into the first zone of the showerhead pedestal and one or more process gases flowing into the second and third zones of the showerhead pedestal.

[0156] In some embodiments, the second film may be configured to apply a second stress profile on the substrate 401 that is different from the first stress profile applied by the first film. In this way, the deposition of the compressive film and the tensile film may be performed alternately. That is, the compressive film may be deposited first, or the tensile film may be deposited later, or the tensile film may be deposited first and the compressive film may be deposited later. In either case, the compressive film and the tensile film can be laminated together to achieve a flat or substantially flat surface that forms a stress compensation layer. This flatness may be due to the fact that the compressive film has a first non-linear thickness profile that is different from the second non-linear thickness profile of the tensile film. As a result, the stress compensation layer is formed on the back surface 401b of the flat or substantially flat substrate 401. Generally, the stress compensation layer refers to one or more films deposited on the back surface 401b of the substrate 401 to correct or compensate for the curvature of the wafer within the substrate 401. As used herein, the phrase "substantially flat" refers to a deviation of the wafer curvature or from a flat reference surface that is less than about 100 μm. Having a flat or substantially flat stress compensation layer reduces IPD, and low IPD reduces the influence of overlay, ensures proper wafer chucking, and avoids defocus.

[0157] According to various embodiments, the stress compensation layer is formed by laminating a plurality of films, such as a compression film and a tensile film, and the stress compensation layer has a non-linear stress profile. The non-linear stress profile of the stress compensation layer can be mainly characterized by a polynomial function such as a parabolic function. In some embodiments, additional films or layers may be laminated on the compression film and the tensile film to achieve a desired stress profile in the stress compensation layer. In some embodiments, the stress compensation layer is removed. For example, the stress compensation layer can be removed in a further downstream processing operation.

[0158] FIG. 4C schematically shows a side view of a stress compensation layer 407 formed on the back surface 401b of a substrate 401. The stress compensation layer 407 includes a compression film 403 and a tensile film 405 laminated on each other. By laminating the compression film 403 and the tensile film 405, the stress compensation layer 407 achieves a flat or substantially flat surface 407a. At least, since the compression film 403 and the tensile film 405 open in opposite directions, combining the thickness profiles of the compression film 403 and the tensile film 405 forms a flat or substantially flat profile. Different regions of the stress compensation layer 407 have different stress values for locally adjusting the stress. The variation of the stress within the stress compensation layer 407 can be characterized by a polynomial function such as a parabolic function. In various embodiments, the stress compensation layer 407 reduces the asymmetric curvature of the substrate 401. Before depositing the stress compensation layer 407, the substrate 401 may have a warp of about +300 μm or more or about -300 μm or less in one or both of the x-axis direction and the y-axis direction. After depositing the stress compensation layer 407, the substrate 401 may have a warp of about -300 μm to about +300 μm in both the x-axis direction and the y-axis direction. In some embodiments, after depositing the stress compensation layer 407, the substrate 401 may have a warp of about -100 μm to about +100 μm in both the x-axis direction and the y-axis direction. However, also, by forming the stress compensation layer 407 on the back surface 401b of the substrate 401, the warp in one or more directions of the x-axis direction and the y-axis direction is eliminated (or substantially eliminated), for example, the warp in one or more directions of the x-axis direction and the y-axis direction can be reduced to 0 μm or to about 0 μm.

[0159] Figure 5 is a graph showing the thickness profile and stress profile of each of i) a compression film, ii) a tensile film, and iii) a stress compensation layer combining a compression film and a tensile film, according to some embodiments.

[0160] As seen in Figure 5, the upper part of the graph provides a thickness profile as a function of the position along the x-axis of the substrate. The lower part of the graph provides a stress profile as a function of the position along the x-axis of the substrate. The value of the stress profile is the value of the product of the stress and the thickness of the film. The value of the product of the stress and the thickness of the film is correlated with the curvature of the wafer.

[0161] Regarding the thickness profile, the first thickness profile 510 of the high compression film is illustrated as having a first parabolic curve. The thickness varies as a polynomial function such that the thickness of the first thickness profile 510 increases parabolically towards the center of the substrate and decreases parabolically towards the edge of the substrate. The second thickness profile 520 of the high tensile film is illustrated as a second parabolic curve opening in the opposite direction to the first parabolic curve. For example, the thickness varies as a polynomial function such that the thickness of the second thickness profile 520 increases parabolically towards the edge of the substrate and decreases parabolically towards the center of the substrate. By combining the high compression film and the high tensile film, a third thickness profile 530 that is flat or uniform across the x-axis of the substrate is obtained.

[0162] Continuing to refer to FIG. 5, the first stress profile 515 of the high compression film is illustrated as a third parabolic curve. As the thickness of the high compression film increases parabolically towards the center of the substrate, the stress decreases parabolically, resulting in a larger negative value. As the thickness of the high compression film decreases parabolically at the edge of the substrate, the stress becomes a smaller negative value parabolically and intersects the neutral axis. The second stress profile 525 of the high tensile film is illustrated as a fourth parabolic curve. As the thickness of the high tensile film increases parabolically towards the edge of the substrate, the stress increases parabolically. As the thickness of the high tensile film decreases parabolically towards the center of the substrate, the stress decreases parabolically and reaches the neutral axis. The third stress profile 535 is the result applied by a combination of the high compression film and the high tensile film, for example, the total stress. While the third stress profile 535 increases parabolically towards the edge of the substrate, the stress becomes a larger negative value parabolically towards the center of the substrate.

[0163] According to various embodiments, the thickness profile of the compression film or the tensile film is adjusted by controlling the concentrations of the precursor and the dilution gas adjacent to the substrate during material deposition. The concentrations of the precursor and the dilution gas can be controlled by changing the amount of the precursor and the dilution gas flowing from a gas distributor such as a shower head or a shower head pedestal along at least one of the x-axis direction and the y-axis direction. The structural components of the gas distributor can be configured to change the distribution of the precursor and / or the dilution gas therefrom.

[0164] For purposes of explanation and illustration, various embodiments will be described in connection with an embodiment of a showerhead pedestal configured to regulate the distribution of precursor and diluent gas adjacent to the backside of a substrate. However, it will be understood that some embodiments are equally applicable to showerhead embodiments as well. The distribution profile of precursor and diluent gas adjacent to the substrate can (or can substantially) match the desired thickness profile of the material deposited on the substrate. The desired thickness profile can be described by a polynomial function, such as a polynomial function of second degree or higher. Various features and / or designs of the showerhead pedestal for providing such an adjusted thickness profile will be described in connection with FIGS. 7A, 7B, 8, 9A-9C, 10, 11, 12A-12C, 13-16, 18A, 18B, 19, 20, 21A, 21B, and 22-27. In some embodiments, as will become more apparent below, the output of the precursor and diluent gas may be divided into a plurality of zones to generate a particular thickness profile.

[0165] FIG. 6 is a graph comparing the desired profile and the simulated profile of the concentration of reaction gas flowing from a gas distributor configured variously with respect to the backside of a substrate, according to some embodiments.

[0166] Referring to FIG. 6, the concentration of the reaction gas from the showerhead pedestal is shown relative to the position on the gas output surface of the showerhead pedestal. The position extends along the radial direction, and the radial direction can extend in the x-axis direction or the y-axis direction. The gas concentration of the desired profile 601 follows a parabolic curve, with the concentration being maximum at the center of the showerhead pedestal and zero at the edge of the showerhead pedestal. The simulated profiles 603, 605, and 607 may not exactly match the desired profile 601, but at least one of them may substantially match the desired profile 603 to achieve a sufficient deposition profile on the back surface of the substrate. The observed or simulated curves can be considered to "substantially match" a parabolic or polynomial curve based on fitting the observed curves to a polynomial function and evaluating the residuals between them to determine an acceptable correlation level. For example, if a statistical measure of the residuals (such as R-squared or adjusted R-squared) reaches or exceeds a predetermined confidence level, the observed curve can be considered to "substantially match" the polynomial function. According to various embodiments, the gas distributor can be configured to output a gas concentration profile that substantially matches a desired parabolic or polynomial function. The simulated profiles 603, 605, and 607 will be described in more detail after considering the various gas distribution functions of some exemplary showerhead pedestals.

[0167] According to various embodiments, a gas distributor is used to distribute one or more gases, such as one or more process gases (or reaction gases) and / or one or more dilution gases, to a region adjacent to a substrate (e.g., above or below the substrate) within a process chamber. Generally, the gas distributor has a first surface and a second surface, each of which includes ports (or holes) that fluidly intervene between the interior and exterior of the gas distributor body. The first surface defines a portion of the body that faces a location within the process chamber where a wafer can be placed during a processing operation in a semiconductor process. The first surface includes a plurality of gas distribution ports, which are openings or holes that enable gas to be fed from within the gas distributor toward the substrate. The second surface defines a portion of the body that faces away from a location within the process chamber where a wafer can be placed during a processing operation. In a plan view, each of the first and second surfaces may have a circular (or substantially circular) shape, but embodiments are not limited thereto. At least one third surface extends between the first and second surfaces and may enclose one or more volumes within the gas distributor. These one or more volumes may define a part of one or more gas distribution flow paths within the gas distributor and may be defined by one or more through-holes (or passages), cavities, recesses, and / or elongated holes within the gas distributor. One or more gas inlets are connected to the second surface and may feed one or more gases for distribution. In some embodiments, the one or more gas inlets are provided in a stem connected to the second surface. The gas within the one or more volumes exits the gas distributor by flowing out through the plurality of gas distribution ports. Some exemplary configurations of the gas distributor will be described in connection with FIGS. 7A, 7B, 8, 9A-9C, 10, 11, 12A-12C, 13-16, 18A, 18B, 19, 20, 21A, 21B, and 22-27 from the perspective of various embodiments of a showerhead pedestal. As described above, the showerhead pedestal is a showerhead configured to feed gas(es) to the back surface of a substrate.

[0168] Figures 7A and 7B schematically show perspective views of a gas dispenser according to some embodiments. FIG. 8 schematically shows a partially exploded perspective view of the gas dispenser of FIG. 7A according to some embodiments. FIG. 9A schematically shows a plan view of a first surface of the gas dispenser of FIG. 7A according to some embodiments. FIG. 9B schematically shows an enlarged portion of the gas dispenser of FIG. 9A according to some embodiments. FIG. 9C schematically shows an enlarged portion of a first surface of another gas dispenser according to some embodiments. FIG. 10 schematically shows a side view of a part of a gas dispenser according to some embodiments. FIG. 11 schematically shows a cross-sectional view of a part of the gas dispenser of FIG. 10 according to some embodiments. FIGS. 12A, 12B, and 12C schematically show cross-sectional views of the gas dispensers of FIGS. 7A and 10 taken along section lines 12A-12A, 12B-12B, and 12C-12C, respectively, according to some embodiments. FIG. 13 schematically shows a plan view of a second surface of a part of the gas dispenser of FIG. 10 according to some embodiments. FIG. 14 schematically shows an enlarged portion of FIG. 12B according to some embodiments. FIG. 15 schematically shows a gas distribution flow path through the gas dispenser of FIG. 7A according to some embodiments.

[0169] Referring to FIGS. 7A - 15, the showerhead pedestal 700 includes a body 701, an outer wall 703, and a stem 705. The body 701 has a first surface 701a and a second surface 701b that faces the first surface 701a in a direction parallel to a first direction, for example, the z - axis direction. Thus, the thickness of the body 701 is defined along the first direction. The first surface 701a includes a plurality of gas distribution ports 707, which may be divided into a plurality of zones (or groups), such as zones 711, 713, and 715. Each of the gas distribution ports 707 may include a corresponding outlet 707a, an inlet 707b, and a passage 707c that fluidly intervenes between the outlet 707a and the inlet 707b. Zones 711, 713, and 715 may be adjacent to each other along a second direction (for example, a direction parallel to the x - axis direction). Further, zones 711, 713, and 715 may extend longitudinally in a third direction (for example, a direction parallel to the y - axis direction). In some embodiments, the longitudinal extension of zone 713 may separate zone 711 from zone 715. The first direction, the second direction, and the third direction intersect each other, and in some cases, the first direction, the second direction, and the third direction may be perpendicular to each other. Although three zones are illustrated, the embodiments are not limited thereto. For example, the gas distribution ports 707 may be divided into two zones, or may be divided into four or more zones. Further, although the outlet 707a of the gas distribution port 707 is shown to have a circular cross - sectional area, any suitable shape, such as an elliptical, polygonal, free - form, etc., may be used. For convenience, hereinafter, it is assumed that the gas distribution ports 707 have circular cross - sectional areas for the outlet 707a, the inlet 707b, and the passage 707c.

[0170] Furthermore, one or more of the zones of the gas distribution ports 707 may include at least one sub-zone of the gas distribution ports. For example, as shown in FIGS. 9A and 9B, zone 711 may include sub-zones 711a, 711b, 711c, 711c1, and zone 715 may include sub-zones 715a, 715b, 715c, 715c1. It should be noted that sub-zones 711c1 and 715c1 may form respective sub-parts of sub-zones 711c and 715c. Thus, sub-zones 711c1 and 715c1 are hereinafter referred to as sub-parts 711c1 and 715c1. In another embodiment, sub-zones 711c and 715c may each include two or more sub-parts. For example, sub-zone 715c may include sub-parts 715c11 and 715c12, as illustrated in FIG. 9C. As will become more apparent hereinafter, each of the zones of the gas distribution ports may have the same pattern (or spatial arrangement) of gas distribution ports, except that the gas distribution ports disposed in the sub-parts of the sub-zones may have different patterns, such as a more dense pattern. However, the embodiments are not limited thereto.

[0171] According to one embodiment, the central axis 717 of the showerhead pedestal 700 not only extends through the center of zone 713, but also the transverse axes 719 and 721 of the first surface 701a extend through the center of zone 713. The transverse axis 719 may extend through the centers of zones 711 and 715, respectively, and the centers of sub-zones 711a, 711b, 711c, 715a, 715b, and 715c, sub-parts 711c1 and 715c1. In this way, the corresponding shapes of zones 711, 713, and 715 may have a maximum width W 711 、W 713 、and W 715 、as well as a maximum length L 711 、L 713 、and L 715 、and the corresponding shapes of sub-zones 711a, 711b, and 711c may have a maximum width W 711a 、W 711b 、and W 711c 、as well as a maximum length L 711a, L 711b , and L 711c may have. The corresponding shapes of the sub - parts 711c1 and 715c1 have a maximum width W 901 and a maximum length L 903 may have. The length L 713 is the length L 711 , L 711a , L 711b , L 711c , L 715 , L 715a , L 715b , L 715c and L 903 may be larger than each of them. The length L 711 , L 711a , L 715 , and L 715a may be equal, and the length L 711b , L 711c , L 715b , L 715c , and L 903 may be larger than each of them. The length L 711b and L 715b each may be larger than the length L 711c , L 715c , and L 903 each may be larger than the length L 711c and L 715c each may be larger than the length L 903 . The width W 901 is the width W 713 , W 711 , W 711a , W 711b , W 711c , W 715 , W 715a , W 715b , and W 715c may be smaller than each of them. The width W 711 and W 715 may be equal, and may be larger than the width W 713 . The width W 711c and W 715c may be equal, and the width W 713 , W 711a , W 711b , W 715a , and W 715b may be larger than each of them. In some embodiments, the width W711a , W 711b , W 713 , W 715a , and W 715b may be equivalent.

[0172] In various embodiments, the shape of zone 713 may exhibit symmetry about each of transverse axes 719 and 721. The shapes of zones 711 and 715, sub - zones 711a, 711b, 711c, 715a, 715b, and 715c, and sub - portions 711c1 and 715c1 may exhibit symmetry about transverse axis 719. For this reason, the shape of zone 711 may have mirror symmetry with the shape of zone 715 about transverse axis 721. The shapes of sub - zones 711a, 711b, and 711c may have mirror symmetry with the respective shapes of sub - zones 715a, 715b, and 715c. For this reason, the shapes of sub - portions 711c1 and 715c1 may be equivalent. Similarly, the pattern of gas distribution ports within zone 713 may have symmetry about each of transverse axes 719 and 721. The patterns of gas distribution ports within zones 711 and 715, sub - zones 711a, 711b, 711c, 715a, 715b, and 715c, and sub - portions 711c1 and 715c1 may have symmetry about transverse axis 719. In one or more embodiments, at least some of the gas distribution ports within zones 711, 713, and 715 may be distributed (or arranged) over a circular region. Also, the combined pattern of gas distribution ports within zone 711, sub - zones 711a, 711b, and 711c, and sub - portion 711c1, and the combined pattern of gas distribution ports within zone 715, sub - zones 715a, 715b, 715c, and sub - portion 715c1 may exhibit mirror symmetry about a transverse axis (e.g., transverse axis 721), but it should also be noted that they do not exhibit rotational symmetry of three or more - fold.

[0173] Referring to FIGS. 9A and 9B, each of the gas distribution ports within zones 711, 713, and 715 may have an equal (or substantially equal) diameter D 905 and a pitch P in a second direction 907at (or substantially at pitch P 907 ), and at pitch P in a third direction 909 at (or substantially at pitch P 909 ), and may be spaced apart from each other. Pitch P 907 and P 909 may be equal in some embodiments. Further, each of the gas distribution ports in sub - portions 711c1 and 715c1 may have an equal (or substantially equal) diameter D 911 and be at pitch P in a second direction 913 at (or substantially at pitch P 913 ), and at pitch P in a third direction 915 and be spaced apart from each other. Pitch P 913 and P 915 may, in some cases, be equal. In some embodiments, pitch P 913 and P 915 may be about one - quarter of the size of each of pitch P 907 and P 909 . According to one embodiment, diameters D 905 and D 911 may be equal, pitch P 907 may be larger than pitch P 913 , and pitch P 909 may be larger than pitch P 915 . Further, the outermost gas distribution ports in sub - portions 711c1 and 715c1, in the second direction, with respect to the central axis 717, may each be disposed inwardly by a distance O 917 only (or substantially by a distance O 917 only) from the outermost gas distribution ports of zones 711 and 715. In some cases, the distance O 917 may be about 0, that is, in other words, the outermost gas distribution ports of sub - portions 711c1 and 715c1 may be aligned (or substantially aligned) with the outermost gas distribution ports of zones 711 and 715, as shown in FIG. 9C. In some embodiments, the distance O 917 may be greater than or equal to about half of pitch P 907 and less than or equal to about three times pitch P 907 , for example, the distance O917 may be twice the pitch P 907 or may be.

[0174] Although the specific shapes, relative dimensions, and symmetries of zones, subzones, and subparts of subzones have been described, embodiments are not limited thereto. For example, the zones, subzones, and subparts of the gas distribution port 707 may have any suitable shape, relative dimension, symmetry, and / or asymmetry that allows for a uniform (or substantially uniform) amount of gas flow within zone 713 and an increase in the amount of gas flow within zones 711 and 715 as the distance from the central axis 717 increases. Further, although the specific patterns, pitches, diameters, offsets, symmetries, and / or asymmetries of the gas distribution ports within the zones, subzones, and subparts have been described, embodiments are not limited thereto. For example, the gas distribution ports within the zones, subzones, and subparts may have any suitable pattern, pitch, diameter, offset, symmetry, and / or asymmetry that allows for a uniform (or substantially uniform) amount of gas flow within (or across) zone 713 and an increase in the amount of gas flow within (or across) zones 711 and 715 as the distance from the central axis 717 increases. For this purpose, the gas distribution ports within a subzone or a subpart of a subzone may have any suitable pattern, pitch, diameter, symmetry, and / or asymmetry that allows for an increase in the amount of gas flow within (or across) zones 711 and 715 as the distance from the central axis 717 increases. Further, the gas distribution ports within the subparts may be arbitrarily and suitably offset from the outermost gas distribution ports of the corresponding zones containing the subparts, thereby enabling the gas flow at (or near) the edges of zones 711 and 715 to match (or substantially match) the intended gas flow profile across zones 711 and 715. Thus, various gas flow profiles function as alternatives to all the various structural methods that can be configured to achieve the intended results of the gas distribution port 707.

[0175] For example, in some embodiments, the gas distribution ports of zones 711 and 715 may have a variable pitch in at least one of the second and third directions. For example, in zones 711 and 715, the pitch between at least some of the gas distribution ports in at least one of the second and third directions may decrease as the distance from the central axis 717 increases. For example, the pitch between the gas distribution ports in the second direction of subzone 711a may be greater than the pitch between the gas distribution ports in the second direction of subzone 711b, and the pitch between the gas distribution ports in the second direction of subzone 711b may be greater than the pitch between the gas distribution ports in the second direction of subzone 711c. The same may apply to the relative pitch between the gas distribution ports in the second direction of subzones 715a, 715b, and 715c.

[0176] In some embodiments, the cross-sectional area of some of the gas distribution ports 707 may be different. For example, in zones 711 and 715, the cross-sectional area of some of the gas distribution ports may increase as the distance from the central axis 717 increases, such as along at least one of the second and third directions. For example, the cross-sectional area of the gas distribution ports of subzone 711a may be smaller than the cross-sectional area of the gas distribution ports of subzone 711b, and the cross-sectional area of the gas distribution ports of subzone 711b may be smaller than the cross-sectional area of the gas distribution ports of subzone 711c. The same may apply to the relative cross-sectional areas of the gas distribution ports of subzones 715a, 715b, and 715c.

[0177] According to various embodiments, the gas distribution port 707 can distribute one or more gases, such as one or more process gases (or reaction gases) and / or one or more dilution gases, to a region adjacent to the back surface of the substrate within the process chamber. For example, one or more first gases may flow from the gas distribution ports in zone 713, and one or more second gases may flow not only from the gas distribution ports in zones 711 and 715 but also from the gas distribution ports in sub - portions 711c1 and 715c1. In this way, the showerhead pedestal 700 can adjust the concentration of the precursor gas fed across the back surface of the substrate by flowing one or more dilution gases to one of zone 713 or zones 711 and 715 and flowing one or more precursor gases to the other of zone 713 or zones 711 and 715. In this manner, the flow of the dilution gas in a particular zone or region adjacent to the substrate dilutes or otherwise limits the concentration of the precursor gas in the region adjacent to the substrate flowing from a particular other zone or region adjacent to the substrate. Examples of dilution gases include, but are not limited to, various inert gases or gas species such as nitrogen gas (N 2 ), helium (He), argon (Ar), neon (Ne), or xenon (Xe). Examples of process gases (or precursor gases) include, but are not limited to, silicon - containing gases, oxygen - containing gases, and nitrogen - containing gases (however, generally not pure N 2 ).

[0178] In some embodiments, the dilution gas is flowed through the body 701 and mixed with the precursor gas in the environment adjacent to the substrate. According to some embodiments, the dilution gas is flowed through the body 701 and mixed with the precursor gas in the environment adjacent to the substrate, but not within the body 701 of the showerhead pedestal 700. Thus, the body 701 can include one or more first gas distribution channels for distributing one or more first gases to the gas distribution ports of zone 713, and one or more second gas distribution channels for distributing one or more second gases not only to the gas distribution ports of zones 711 and 715 but also, if present, to the gas distribution ports of sub-parts 711c1 and 715c1. As will become more apparent below, each of the first and second gas distribution channels can establish a path through the body 701 that begins at an inlet and ends at a gas distribution port. Optionally, one or more internal volumes can be defined between the inlet and the gas distribution port by, for example, one or more elongated holes, blind cavities, recesses, and / or through-holes (or passages). Before describing each of these internal volumes, gas concentration profiles from various simulation examples of the arrangement of the gas distribution ports are addressed.

[0179] Returning to FIG. 6 and continuing to refer to FIGS. 9A - 9C, the various configurations of the gas distribution ports 707 of the showerhead pedestal 700 can be used to adjust a gas concentration profile that matches or substantially matches a desired profile, such as a profile characterized by a parabolic or polynomial function. In a first simulation example of a showerhead pedestal similar to the showerhead pedestal 700, the gas distribution port 707 was divided into a plurality of zones similar to zones 711, 713, and 715. In a second simulation example of another showerhead pedestal similar to the showerhead pedestal 700, the gas distribution port 707 was not only divided into a plurality of zones similar to zones 711, 713, and 715, but some of the plurality of zones (e.g., zones similar to 711 and 715) included a plurality of sub - parts. For example, the zone similar to zone 715 included sub - parts similar to sub - parts 715c11 and 715c12 shown in FIG. 9C, and the zone similar to zone 711 showed symmetry with the zone similar to zone 715 about the transverse axis 721. Similar to what is shown in FIG. 9C, each of the sub - parts similar to sub - parts 715c11 and 715c12 had a maximum width W 901 and a maximum length L 915 . Further, the outermost gas distribution ports of the sub - parts similar to sub - parts 715c11 and 715c12 were substantially aligned with the outermost gas distribution ports of each of the zones similar to zone 715 in the second simulation example, or in other words, the distance O 917 was 0 (or, approximately 0). In a third simulation example of a showerhead pedestal similar to the showerhead pedestal 700, the gas distribution port 707 was not only divided into a plurality of zones similar to zones 711, 713, and 715, but each of the zones similar to zones 711 and 715 included sub - parts similar to sub - parts 711c1 and 715c1 illustrated in FIG. 9B. In this way, the outermost gas distribution ports of the sub - parts similar to sub - parts 711c1 and 715c1 were at a distance O 917is arranged only inside, and this distance is the pitch P 907 which was about twice that. The gas distribution flow paths within each simulated showerhead pedestal embodiment were the same.

[0180] To determine the simulated gas concentration profile, the reactive gas (i.e., nitrous oxide (N 2 O)) was simulated as flowing from a zone similar to zone 713, and the diluent gas was simulated as flowing from zones similar to zones 711 and 715, and sub-parts similar to sub-parts 711c1, 715c1, 715c11, and 715c12. In this way, the diluent gas was simulated as flowing from each of the exemplary showerhead pedestals simultaneously with the reactive gas for depositing a compressive or tensile film on the substrate. It should be noted that the diluent gas reduces (or dilutes) the concentration of the reactive gas adjacent to the substrate. Thus, when the diluent gas increases at the periphery of the substrate, the concentration of the reactive gas decreases at the periphery, and when the diluent gas increases at the center of the substrate, the concentration of the reactive gas decreases at the center.

[0181] As can be understood from the results shown in FIG. 6, the configuration of the showerhead pedestal related to the first simulation example resulted in a gas concentration profile 603 with the lowest correlation with the desired profile 601. The configuration of the showerhead pedestal related to the third simulation example resulted in a gas concentration profile 607 with the highest correlation with the desired profile 601. Also, the correlation of the gas concentration profile 605 corresponding to the configuration of the showerhead pedestal related to the second simulation example was between the gas concentration profiles 603 and 607. Thus, utilization of one or more sub - portions within one or more primary zones or sub - zones can be utilized to further adjust the gas concentration profile to more closely match or substantially match a desired profile, such as a profile characterized by a parabolic or polynomial function. In the following, each of the various internal volumes within the showerhead pedestal 700 configured to supply gas to the gas distribution ports among the gas distribution ports 707 will be described in more detail.

[0182] Referring to FIGS. 10, 11, and 12A, the gas distribution ports 707 are fluidly connected to a plurality of through - holes (or passages), such as through - holes 1001_1 to 1001_25. The through - holes 1001_1 to 1001_25 extend longitudinally in a fourth direction that intersects the first direction. The third and fourth directions may be equal. In some embodiments, the through - holes 1001_1 to 1001_25 penetrate the body 701 at a distance H 1101 from (or substantially at a distance H 1101 from) the second surface 701b and are drilled with a drill. Further, the through - holes 1001_1 to 1001_25 are at a pitch P 1103 in (or substantially at a pitch P 1103In (b), they can be separated from each other. The fifth direction intersects the first direction and the fourth direction, and in some embodiments, it may be equal to the second direction. Although 25 through-holes are shown as an example, the embodiments are not limited thereto. However, there is a trade-off between the structural integrity of the main body 701 and the gas distribution effect provided by the corresponding number of through-holes. For example, as the number of through-holes increases, the structural integrity of the main body 701 may decrease, but the gas distribution effect may increase.

[0183] According to various embodiments, the group of through-holes 1001_1 to 1001_25 may be configured to provide gas to the gas distribution ports of the corresponding zones, sub-zones, or sub-portions of the sub-zones. For example, the through-holes 1001_1 to 1001_11 may be fluidly connected to the gas distribution ports of the zone 711, the through-holes 1001_12 to 1001_14 may be fluidly connected to the gas distribution ports of the zone 713, and the through-holes 1001_15 to 1001_25 may be fluidly connected to the gas distribution ports of the zone 715. For this purpose, the through-holes 1001_1 to 1001_5 are fluidly connected to the gas distribution ports of the sub-zone 711c and the sub-portion 711c1, the through-holes 1001_6 to 1001_8 are fluidly connected to the gas distribution ports of the sub-zone 711b, and the through-holes 1001_9 to 1001_11 are fluidly connected to the gas distribution ports of the sub-zone 711a. Similarly, the through-holes 1001_15 to 1001_17 are fluidly connected to the gas distribution ports of the sub-zone 715a, the through-holes 1001_18 to 1001_20 are fluidly connected to the gas distribution ports of the sub-zone 715b, and the through-holes 1001_21 to 1001_25 are fluidly connected to the gas distribution ports of the sub-zone 715c and the sub-portion 715c1.

[0184] The distal ends of the through-holes 1001_1 to 1001_25 are fluidly connected to a first plurality of blind cavities, such as blind cavities 1003_1 to 1003_12. Each of the blind cavities 1003_1 to 1003_12 has a depth L on the third surface 701c of the main body 701 1103 up to (or substantially up to 1103 up to) and a distance H from the second surface 701b of the main body 7011103 extends at (or substantially at a distance H 1103 ). The third surface 701c of the main body 701 is connected to the second surface 701b of the main body 701 and may extend towards the first surface 701a of the main body 701. The fourth surface 701d of the main body 701 may connect the third surface 701c and the fifth surface 701e of the main body 701. The fifth surface 701e of the main body 701 may connect the first surface 701a and the fourth surface 701d of the main body 701. In some embodiments, the blind cavities 1003_1 to 1003_12 are arranged around the periphery 701p of the main body 701. For example, the blind cavities 1003_1 to 1003_12 may be defined within the third surface 701c of the main body 701 and arranged azimuthally about the central axis 717. At a distance H from the second surface 701b of the main body 701 1103 of (or substantially at a distance H 1103 of) twelve blind cavities are shown as an example, but the embodiments are not limited thereto.

[0185] As shown in FIGS. 10 and 12A, each of the blind cavities 1003_1 to 1003_12 can be connected to one or more distal ends of at least one through hole 1001_1 to 1001_25. For example, the first and second distal ends of the through holes 1001_1 to 1001_5 can be connected to the blind cavity 1003_1, and this blind cavity 1003_1 can be fluidly connected to the gas distribution ports of the subzone 711c and the sub - portion 711c1. The first distal end of the through holes 1001_6 to 1001_8 can be connected to the blind cavity 1003_2, and the second distal end of the through holes 1001_6 to 1001_8 can be connected to the blind cavity 1003_3. In this way, the blind cavities 1003_2 and 1003_3 can be fluidly connected to the gas distribution ports of the subzone 711b. The first distal end of the through holes 1001_9 to 1001_11 can be connected to the blind cavity 1003_4, and the second distal end of the through holes 1001_9 to 1001_11 can be connected to the blind cavity 1003_5. Thus, the blind cavities 1003_4 and 1003_5 can be fluidly connected to the gas distribution ports of the subzone 711a. The first distal end of the through holes 1001_12 to 1001_14 can be connected to the blind cavity 1003_6, and the second distal end of the through holes 1001_12 to 1001_14 can be connected to the blind cavity 1003_7. In this way, the blind cavities 1003_6 and 1003_7 can be fluidly connected to the gas distribution ports of the zone 713. The first distal end of the through holes 1001_15 to 1001_17 can be connected to the blind cavity 1003_8, and the second distal end of the through holes 1001_15 to 1001_17 can be connected to the blind cavity 1003_9. Therefore, the blind cavities 1003_8 and 1003_9 can be fluidly connected to the gas distribution ports of the subzone 715a. The first distal end of the through holes 1001_18 to 1001_20 can be connected to the blind cavity 1003_10, and the second distal end of the through holes 1001_18 to 1001_20 can be connected to the blind cavity 1003_11. In this way, the blind cavities 1003_10 and 1003_11 can be fluidly connected to the gas distribution ports of the subzone 715b. The first and second distal ends of the through holes 1001_21 to 1001_25 can be connected to the blind cavity 1003_12, and this blind cavity 1003_12 can be fluidly connected to the gas distribution ports of the subzone 715c and the sub - portion 715c1.Accordingly, each of the blind holes 1003_2 to 1003_11 can be connected to three of the through holes 1001_1 to 1001_25, while each of the blind holes 1003_1 and 1003_12 can be connected to five of the through holes 1001_1 to 1001_25. However, the embodiments are not limited to the above configuration between the blind holes and the through holes. For example, any given blind hole among the first plurality of blind holes can be connected to one, two, or four through holes, or to more than five through holes, to enable a uniform (or substantially uniform) amount of gas flow within zone 713 and to enable the amount of gas flow to increase within zones 711 and 715 as the distance from the central axis 717 increases.

[0186] In some embodiments, the respective sizes (e.g., at least one of the opening, depth, width, and volume) of the blind holes 1003_1 and 1003_12 can be equal, and the respective sizes of the blind holes 1003_2 to 1003_11 can be equal. For this purpose, each of the respective sizes of the blind holes 1003_1 and 1003_12 may be larger than each of the respective sizes of the blind holes 1003_2 to 1003_11. However, the embodiments are not limited thereto.

[0187] Referring to FIGS. 10, 11, 12B, and 12C, the blind cavities 1003_1 to 1003_12 are fluidly connected to a second plurality of blind cavities, such as blind cavities 1005_1 to 1005_12, through corresponding recesses, such as recesses 1007_1 to 1007_12, in the partition wall 723 of the main body 701. In this way, the blind cavity 1005_1 can be fluidly connected to the gas distribution ports of the sub-zone 711c and the sub-part 711c1, the blind cavities 1005_2 and 1005_3 can be fluidly connected to the gas distribution ports of the sub-zone 711b, and the blind cavities 1005_4 and 1005_5 can be fluidly connected to the gas distribution ports of the sub-zone 711a. In a similar manner, the blind cavity 1005_12 can be fluidly connected to the gas distribution ports of the sub-zone 715c and the sub-part 715c1, the blind cavities 1005_10 and 1005_11 can be fluidly connected to the gas distribution ports of the sub-zone 715b, and the blind cavities 1005_8 and 1005_9 can be fluidly connected to the gas distribution ports of the sub-zone 715a. Also, the blind cavities 1005_6 and 1005_7 can be fluidly connected to the gas distribution ports of the zone 713.

[0188] According to various embodiments, the blind cavities 1005_1 to 1005_12 have a depth L 1105 up to (or substantially up to) a depth L 1105 and a distance H 1105 from (or substantially at a distance H 1105 from) the second surface 701b of the main body 701 such that the partition wall 723 separates the blind cavities 1005_1 to 1005_12 from the blind cavities 1003_1 to 1003_12 in a first direction. That is, the recesses 1007_1 to 1007_12 in the partition wall 723 form a plurality of gas flow paths that fluidly connect the corresponding ones of the blind cavities 1005_1 to 1005_12 to the blind cavities 1003_1 to 1003_12 that are adjacent in the first direction. In this way, the blind cavities 1005_1 to 1005_12 can also be arranged around the periphery 701p of the main body 701, such as being arranged azimuthally about the central axis 717. The distance H 1105 from (or substantially at a distance H 1105Twelve blind holes are shown as an example, but the embodiments are not limited thereto.

[0189] In some embodiments, the size of each of blind holes 1005_1 and 1005_12 (e.g., at least one of the aperture, depth, width, and volume) may be equal, and the size of each of blind holes 1005_2 to 1005_11 may be equal. For this purpose, each of the sizes of blind holes 1005_1 and 1005_12 may be larger than each of the sizes of blind holes 1005_2 to 1005_11. Further, in some embodiments, the size of each of blind holes 1003_1, 1003_12, 1005_1, and 1005_12 may be equal, and the size of each of blind holes 1003_2 to 1003_11 and 1005_2 to 1005_11 may be equal. However, the embodiments are not limited thereto.

[0190] As seen in FIGS. 7A, 7B, 12A to 12C, and 15, the outer wall 703 may be connected to the main body 701 such that the upper surface 703a and the inner surface 703b of the outer wall 703 are in contact with the fourth surface 701d and the third surface 701c of the main body 701, respectively. In some embodiments, there may be a gap between one or more of the upper surface 703a and the inner surface 703b of the outer wall 703 and the fourth surface 701d and the third surface 701c of the main body 701. However, it should be noted that the size of the gap(s) can be configured (or maintained within an acceptable range) to provide a gas blocking effect that prevents, minimizes, or at least reduces the flow of gas therethrough. For example, the flow conductance associated with the gap(s) is low enough relative to the flow conductance of the gas distribution flow path to suppress deviation from the gas distribution flow path. In this way, blind holes 1003_1 to 1003_12 and 1005_1 to 1005_12 can form corresponding internal volumes within the showerhead pedestal 700. In some embodiments, the depth L of blind holes 1005_1 to 1005_12 1105 is greater than the depth L of blind holes 1003_1 to 1003_12. The depth L 1103 is greater than the depth L 1103Depth L compared to 1105 By increasing, blind cavities 1005_1 to 1005_12 can function as a gas suction plenum, and blind cavities 1003_1 to 1003_12 can function as a gas distribution plenum. For example, the first gas flow into blind cavities 1005_1 to 1005_12 can help stabilize the pressure of the source gas within the showerhead pedestal 700, while it can help stabilize the pressure of the distribution gas within blind cavities 1003_1 to 1003_12. The distribution gas within blind cavities 1003_1 to 1003_12 is made available at the distal ends of through holes 1001_1 to 1001_25 for output via gas distribution ports 707. This configuration can not only enable gas distribution ports arranged on opposite sides about the central axis 717 to exhibit similar gas flows, but also enable the showerhead pedestal 700 to reach a steady gas flow without consuming too much excess reaction gas and dilution gas.

[0191] Referring to FIGS. 11 and 12B, blind cavity 1005_6 is fluidly connected to the distal end of elongated hole 1201, while blind cavity 1005_7 is fluidly connected to the distal end of elongated hole 1203. The proximal ends of elongated holes 1201 and 1203 are fluidly connected to a first inlet 1205, which is configured to receive one or more first gases into the body 701. Although shown as a single inlet, the first inlet 1205 may be one or more first inlets 1205. In this way, elongated holes 1201 and 1203 extend radially from the central axis 717 in a generally planar region of the first surface of the body 701 at a distance H 1203 from (or, substantially at a distance H 1203 from). Accordingly, the first inlet 1205 and elongated holes 1201 and 1203 can be fluidly connected to the gas distribution ports of zone 713.

[0192] As can be seen in FIGS. 11 and 12C, blind cavity 1005_1 is fluidly connected to the distal ends of elongated holes 1207 and 1209, while blind cavity 1005_12 is fluidly connected to the distal ends of elongated holes 1211 and 1213. Blind cavities 1005_2 to 1005_5 are fluidly connected to the respective distal ends of elongated holes 1215, 1217, 1219, and 1221. Further, blind cavities 1005_8 to 1005_11 are fluidly connected to the respective distal ends of elongated holes 1223, 1225, 1227, and 1229. The proximal ends of elongated holes 1207 to 1229 are fluidly connected to a second inlet 1231, and the second inlet 1231 is configured to receive one or more second gases into the main body 701. Although shown as one inlet, the second inlet 1231 may be formed as one or more second inlets 1231. In this way, the elongated holes 1207 to 1229 are at a distance H 1229 from (or substantially at a distance H 1229 ) and extend radially from the central axis 717 in a generally planar region of the second surface 701b of the main body 701. The distance H 1229 may be greater than the distance H 1203 in some embodiments. Thus, the elongated holes 1201 and 1203 may be closer to the second surface 701b of the main body 701 than the elongated holes 1207 to 1229. Also, note that the distance H 1101 may be greater than the distance H 1229 in some embodiments. Thus, each of the elongated holes 1201, 1203, and 1207 to 1229 may be closer to the second surface 701b of the main body 701 than each of the through holes 1001_1 to 1001_25.

[0193] Based on the above configuration, the second inlet 1231 and the elongated holes 1207 and 1209 can be fluidly connected to the gas distribution ports of the sub-zone 711c and the sub-part 711c1, the second inlet 1231 and the elongated holes 1215 and 1217 can be fluidly connected to the gas distribution ports of the sub-zone 711b, and the second inlet 1231 and the elongated holes 1219 and 1221 can be fluidly connected to the gas distribution ports of the sub-zone 711a. In a similar manner, the second inlet 1231 and the elongated holes 1211 and 1213 can be fluidly connected to the gas distribution ports of the sub-zone 715c and the sub-part 715c1, the second inlet 1231 and the elongated holes 1227 and 1229 can be fluidly connected to the gas distribution ports of the sub-zone 715b, and the second inlet 1231 and the elongated holes 1223 and 1225 can be fluidly connected to the gas distribution ports of the sub-zone 715a.

[0194] Accordingly, in various embodiments, each of the blind cavities 1005_2 to 1005_11 may be connected to one of the elongated holes 1201, 1203, and 1207 to 1229, and each of the blind cavities 1005_1 and 1005_12 may be connected to two of the elongated holes 1201, 1203, and 1207 to 1229. In this way, the blind cavities 1005_1 and 1005_12 may receive more than the amount received by the blind cavities 1005_2 to 1005_5 and 1005_8 to 1005_11 via the elongated holes 1215 to 1229, and may receive one or more second gases via the elongated holes 1207 to 1213. Further, the blind cavities 1005_1 and 1005_12 may receive more than the one or more first gases received by the blind cavities 1005_6 and 1005_7 via the elongated holes 1201 and 1203, and may receive one or more second gases via the elongated holes 1207 to 1213. However, the embodiments are not limited thereto. For example, any given blind cavity of the second plurality of blind cavities may be connected to any suitable number of elongated holes, such as three, four, five, or more than six elongated holes, to enable, for example, a uniform (or substantially uniform) amount of gas flow within zone 713 and to enable the amount of gas flow to increase within zones 711 and 715 as the distance from the central axis 717 increases.

[0195] According to some embodiments, the cross-sectional area of each of the elongated holes 1201, 1203, and 1207 - 1229 may be equal or substantially equal. However, in some embodiments, at least one of the elongated holes 1201, 1203, and 1207 - 1229 may have a cross-sectional area different from at least another one of the elongated holes 1201, 1203, and 1207 - 1229. For example, the elongated holes 1201 and 1203 may have an equal (or substantially equal) first cross-sectional area, the elongated holes 1207 - 1213 may have an equal (or substantially equal) second cross-sectional area, the elongated holes 1215, 1217, 1227, 1229 may have an equal (or substantially equal) third cross-sectional area, and the elongated holes 1219 - 1225 may have an equal (or substantially equal) fourth cross-sectional area. The first and second cross-sectional areas may be equal or substantially equal. Each of the second cross-sectional areas may be larger than each of the third cross-sectional areas, and each of the third cross-sectional areas may be larger than each of the fourth cross-sectional areas.

[0196] Variations in the cross-sectional areas of the first to fourth can vary the flow conductance within the showerhead pedestal 700. For example, decreasing the cross-sectional area of an elongated hole can decrease the flow conductance of that hole, thereby increasing the flow resistance experienced by the gas(es) flowing therethrough. As the flow resistance increases, the throughput decreases. The converse is also true. In other words, increasing the cross-sectional area of an elongated hole can increase the flow conductance of that hole, thereby decreasing the flow resistance experienced by the gas(es) passing through the elongated hole. As the flow resistance decreases, the throughput increases. Thus, variations between the first to fourth cross-sectional areas of the corresponding elongated holes 1201, 1203, and 1207 - 1229 can change the amount of gas(es) passing through the blind cavities 1005_1 - 1005_12 and can be utilized to output via the corresponding gas distribution ports fluidly connected thereto. Accordingly, the relative sizes of the first to fourth cross-sectional areas can be utilized to adjust the flow rate of the gas supplied to different zones, sub-zones, and / or sub-portions of sub-zones of the gas distribution ports. This can be used to control the concentration of precursor gas and dilution gas proximate to (or adjacent to) the substrate during one or more deposition operations using the showerhead pedestal 700.

[0197] For example, due to the relative cross-sectional areas of the elongated holes 1201, 1203, and 1207 to 1213, the elongated holes 1201, 1203, and 1207 to 1213 can provide more gas(es) to the blind cavities 1005_6, 1005_7, 1005_1, and 1005_12 than the gas provided to the blind cavities 1005_2, 1005_3, 1005_10, and 1005_11 through the elongated holes 1215, 1217, 1227, and 1229, which may have a relatively smaller cross-sectional area than the elongated holes 1201, 1203, and 1207 to 1213. In this way, the gas distribution ports fluidly connected to the blind cavities 1005_6, 1005_7, 1005_1, and 1005_12 can be provided with more gas(es) than the gas distribution ports fluidly connected to the blind cavities 1005_6, 1005_7, 1005_1, and 1005_12. Further, due to the relative cross-sectional areas of the elongated holes 1215, 1217, 1227, and 1229, the elongated holes 1215, 1217, 1227, and 1229 can provide more gas(es) to the blind cavities 1005_2, 1005_3, 1005_10, and 1005_11 than the gas provided to the blind cavities 1005_4, 1005_5, 1005_8, and 1005_9 through the elongated holes 1219, 1221, 1223, and 1225, which may have a relatively smaller cross-sectional area than the elongated holes 1215, 1217, 1227, and 1229. In this way, the gas distribution ports fluidly connected to the blind cavities 1005_2, 1005_3, 1005_10, and 1005_11 can be provided with more gas(es) than the gas distribution ports fluidly connected to the blind cavities 1005_4, 1005_5, 1005_8, and 1005_9. Such a configuration can enable a uniform (or substantially uniform) output of one or more first gases through zone 713 and a variable output of one or more second gases through zones 711 and 715. For example, in zone 711, the sub-zone 711c and the sub-part 711c1 can output more of one or more second gases than the sub-zone 711b, and the sub-zone 711b can output more of one or more second gases than the sub-zone 711a.Similarly, in zone 715, subzone 715c and sub - portion 715c1 may output one or more second gases more than subzone 715b, and subzone 715b may output one or more second gases more than subzone 715a.

[0198] According to various embodiments, one or more second gases may be supplied to the gas distribution ports of zone 711 through the second inlet 1231, the elongated holes 1207, 1209, and 1215 - 1221, the blind cavities 1005_1 - 1005_5, the recesses 1007_1 - 1007_5, the blind cavities 1003_1 - 1003_5, and the through - holes 1001_1 - 1001_11. Also, one or more second gases may be supplied to the gas distribution ports of sub - portion 711c1 through the second inlet 1231, the elongated holes 1207 and 1209, the blind cavity 1005_1, the recess 1007_1, the blind cavity 1003_1, and the through - hole 1001_2. Similarly, one or more second gases may be supplied to the gas distribution ports of zone 715 through the second inlet 1231, the elongated holes 1211, 1213, and 1223 - 1229, the blind cavities 1005_8 - 1005_12, the recesses 1007_8 - 1007_12, the blind cavities 1003_8 - 1003_8, and the through - holes 1001_15 - 1001_25. For this purpose, one or more second gases may be supplied to the gas distribution ports of sub - portion 715c1 through the second inlet 1231, the elongated holes 1211 and 1213, the blind cavity 1005_12, the recess 1007_12, the blind cavity 1003_12, and the through - hole 1001_24. Also, one or more first gases may be supplied to the gas distribution ports of zone 713 through the first inlet 1205, the elongated holes 1201 and 1203, the blind cavities 1005_6 and 1005_7, the recesses 1007_6 and 1007_7, the blind cavities 1003_6 and 1003_7, and the through - holes 1001_12 - 1001_14. Therefore, at least a part of the gas distribution flow path formed between the second inlet 1231 and the gas distribution ports of zones 711 and 715 may share a matching portion such as within the passage of the second inlet 1231. Exemplary gas distribution flow paths will be described in more detail in relation to FIG. 15.

[0199] Referring to FIG. 15, the gas distribution channel 1501 can supply one or more first gases received at the first inlet 1205 to the n-th gas distribution port 707n of the zone 713. In this way, the gas distribution channel 1501 can flow from the first inlet 1205 to the elongated hole 1201, whereby one or more first gases in the gas distribution channel 1501 can flow into the blind cavity 1005_6 that can function as an intake plenum. As the pressure increases within the blind cavity 1005_6, one or more first gases in the gas distribution channel 1501 can flow through the recess 1007_6 into the blind cavity 1003_6 that can function as a gas distribution plenum. As the pressure increases within the blind cavity 1003_6, one or more first gases in the gas distribution channel 1501 are pushed into the through-hole 1001_13 and can be discharged through the n-th gas distribution port 707n to the region proximate to the substrate during the deposition operation. Each of the other gas distribution ports among the gas distribution ports 707 can similarly be supplied with one or more first gases or one or more second gases via a corresponding gas distribution channel that passes between the first inlet 1205 or the second inlet 1231 and a corresponding one of the other gas distribution ports among the gas distribution ports 707. It should be noted that within the showerhead pedestal 700, the gas distribution channels extending from the first inlet 1205 can be fluidly isolated from the gas distribution channels extending from the second inlet 1231.

[0200] It should be noted that in order to adjust the concentration of the precursor gas adjacent to the substrate, the ratio of the flow rate of the precursor gas to the flow rate of the inert gas passing through at least two zones can be controlled. For example, when the ratio is higher, more precursor gas is flowed along the axial length of the shower head pedestal 700, such as along the x-axis or y-axis direction of the shower head pedestal 700. As a result, the concentration of the precursor gas decreases less gradually (e.g., has a gentler slope) along the axial length. When the ratio is lower, less precursor gas is flowed along the axial length of the shower head pedestal 700. As a result, the concentration of the precursor gas decreases more gradually (e.g., has a steeper slope) along the axial length. The ratio of the flow rate of the precursor gas to the flow rate of the inert gas can be controlled by adjusting the relationship between the gas distribution ports 707, through holes 1001_1 to 1001_25, blind cavities 1003_1 to 1003_12 and 1005_1 to 1005_12, recesses 1007_1 to 1007_12, and elongated holes 1201, 1203, and 1207 to 1229, as well as the relative sizes, amounts, arrangements, patterns, etc. of the gas distribution ports 707, through holes 1001_1 to 1001_25, blind cavities 1003_1 to 1003_12 and 1005_1 to 1005_12, recesses 1007_1 to 1007_12, and elongated holes 1201, 1203, and 1207 to 1229. In one embodiment, the gas distribution ports in zone 713 can provide a uniform (or substantially uniform) output (or gas flow profile) of one or more first gases, and the gas distribution ports in zones 711 and 715, together with the gas distribution ports in sub-portions 711c1 and 715c1, can provide a changing output (or gas flow profile) of one or more second gases that increases as the distance from the central axis 717 increases. Thus, the various gas flow profiles referred to herein can also function as a substitute for all the various structural methods that can be configured such that the internal volume of the shower head pedestal 700 reaches the intended result.Thus, the various gas flow profiles referred to herein can function as a substitute for all of the various structural ways in which the internal volume of the showerhead pedestal 700 can be configured and all of the various structural ways in which the gas distribution ports 707 can be configured to achieve the intended results.

[0201] According to some embodiments, the body 701 is manufactured as a one-piece structure. For example, one or more additive manufacturing techniques, such as direct laser metal sintering (or, if a ceramic showerhead is desired, a ceramic sintering process), may be utilized to form the body 701. It is also contemplated that the body 701 may be machined from a solid raw material such as a billet material. In other embodiments, the body 701 may be formed by stacking a plurality of plate structures, and for this purpose, one or more index pins or other similar features may be utilized to align the plate structures. In such an example, the body 701 may include one or more holes extending through a portion of the plate structure such that one or more index pins can align the plate structures with each other. Further, in examples where a plurality of plate structures are used, the various plates forming the overall structure of the body 701 may be brazed or diffusion bonded together along the mating surfaces to prevent gas flow between the contact surfaces of the plates. Also, in some cases, it is contemplated that the body 701 and the outer wall 703 may be manufactured as a one-piece structure or formed as separate components that are coupled (or removably coupled) to each other.

[0202] In some embodiments, the body 701 may further include one or more holes (such as hole 725) that extend through the body 701 in a first direction on a first surface 701a. In this way, each hole may connect to a corresponding blind hole (such as blind hole 727) on the second surface 701b. The combination of the blind hole and the hole may be configured to connect to respective lift pins of a substrate processing system, such as the substrate processing system 2900 of FIG. 29. For example, the lift pins may be movably disposed through the hole 725 and may be capable of raising or lowering a substrate supported on the showerhead pedestal 700 relative to the first surface 701a of the body 701.

[0203] According to various embodiments, one or more gases are supplied to the showerhead pedestal 700 in a separate state or in a partially mixed state. Thus, the showerhead pedestal 700 may include one or more tortuous flow paths configured to induce turbulent flow as one or more received gases flow therethrough before being received inside the body 701. In some embodiments, the tortuous flow paths are part of the stem 705. Such a configuration can replace (or be used in conjunction with) a conventional external mixing assembly to reduce the cost of the tool or enhance the mixing effect. Some examples of tortuous flow paths will be described in connection with FIGS. 18A, 18B, 19, 20, 21A, 21B, and 22-27.

[0204] FIGS. 18A and 18B show perspective views of a stem body of a gas distributor of FIG. 18 according to some embodiments. FIG. 19 schematically shows a cross-sectional view of the stem body of FIG. 18A according to some embodiments. FIGS. 20, 21A, and 21B schematically show tortuous flow paths inside the stem body of FIG. 18A according to some embodiments. FIG. 22 schematically shows a side view of the stem body of FIG. 18A according to some embodiments. FIGS. 23-27 schematically show cross-sectional views of the stem body taken along cross-section lines 23-23, 24-24, 25-25, 26-26, and 27-27, respectively, according to some embodiments.

[0205] Referring to FIGS. 7B, 8, 12B, 12C, 18A, 18B, 19, 20, 21A, 21B, and 22 - 27, the stem 705 includes an outer wall 729 and a stem body 731. The outer wall 729 can be connected to the second surface 701b of the body 701, such as by being welded or otherwise fixed to the second surface 701b of the body 701. The stem body 731 includes a plurality of internal flow paths 2000, such as a first internal flow path 2101 and a second internal flow path 2103, and each internal flow path is configured to separately supply one or more gases to the body 701. In some cases, the first internal flow path 2101 is configured to supply one or more first gases in a mixed state to the first inlet 1205, and the second internal flow path 2103 is configured to supply one or more second gases in a mixed state to the second inlet 1231. Thus, the stem body 731 has a proximal end 1801 with a plurality of inlets (e.g., inlets 2101a and 2103a) and a distal end 1803 opposite the proximal end 1801. The distal end 1803 includes a plurality of outlets, such as a first outlet 2101b and a second outlet 2103b. In some embodiments, the stem body 731 includes a first flange portion 1805 configured to engage the first inlet 1205 and a second flange portion 1807 configured to engage the second inlet 1231.

[0206] According to various embodiments, each of the plurality of internal flow paths 2000 includes one or more structures configured to induce turbulent flow along the longitudinal axis 2001 of the stem body 731 in response to the flow of one or more gases along that internal flow path. The longitudinal axis 2001 may extend in a first direction and may coincide with the central axis 717. The one or more structures may include at least one of a linearly extending portion, a helical path, a chamber, a collision protrusion, an annular passage, and a through - flow path orifice.

[0207] In some embodiments, the first internal flow path 2101 may include an inlet 2101a, a first portion 2105, a plurality of second portions 2107a - 2107d, a plurality of third portions 2109a - 2109c, a fourth portion 2111, a fifth portion 2113, and a first outlet 2101b. The first portion 2105 extends linearly from the inlet 2101a along the longitudinal axis 2001. The second portions 2107a - 2107d are fluidly connected to the first portion 2105 and may form corresponding spiral paths centered on the longitudinal axis 2001. The third portions 2109a - 2109c are fluidly connected to the first portion 2105 and the second portions 2107a - 2107d and may form corresponding chambers extending along the longitudinal axis 2001. The fifth portion 2113 may be fluidly connected to the first portion 2105, the second portions 2107a - 2107d, and the third portions 2109a - 2109c and may extend linearly along the longitudinal axis 2001. For example, the fifth portion 2113 may be aligned coaxially with the longitudinal axis 2001. The fourth portion 2111 is fluidly interposed between the fifth portion 2113 and each of the second portions 2107a - 2107d and the third portions 2109a - 2109c.

[0208] According to some embodiments, the second internal flow path 2103 may include an inlet 2103a, a first portion 2115, a plurality of second portions 2117a-2117d, a plurality of third portions 2119a-2119c, a fourth portion 2121, a plurality of fifth portions 2123a-2123e, and a second outlet 2103b. The first portion 2115 extends linearly from the inlet 2103a along the longitudinal axis 2001. The second portions 2117a-2117d are fluidly connected to the first portion 2115 and may form corresponding spiral paths centered on the longitudinal axis 2001. The third portions 2119a-2119c are fluidly connected to the first portion 2115 and the second portions 2117a-2117d and may form corresponding chambers extending along the longitudinal axis 2001. The fifth portions 2123a-2123e may be fluidly connected to each of the first portion 2115, the second portions 2117a-2117d, and the third portions 2119a-2119c and may extend linearly along the longitudinal axis 2001. For example, the fifth portions 2123a-2123e may be aligned coaxially with the longitudinal axis 2001. The fourth portion 2121 is fluidly interposed between each of the fifth portions 2123a-2123e and each of the second portions 2117a-2117d and the third portions 2119a-2119c.

[0209] Referring to FIGS. 19, 20, 21A, and 21B, each of the first portions 2105 and 2115 may extend parallel (or substantially parallel) to each other along the longitudinal axis 2001. The first portion 2105 of the first internal flow path 2101 may be displaced to the first side of the central reference plane 1901 including the longitudinal axis 2001 and the first reference direction 1903. The first portion 2115 of the second internal flow path 2103 may be displaced to the second side of the central reference plane 1901 opposite to the first side of the central reference plane 1901. Similarly, each of the third portions 2109a-2109c and 2119a-2119c may extend parallel (or substantially parallel) to each other along the longitudinal axis 2001. The third portions 2109a-2109c of the first internal flow path 2101 may be displaced to the second side of the central reference plane 1901, while the third portions 2119a-2119c of the second internal flow path 2103 may be displaced to the first side of the central reference plane 1901. However, the embodiments are not limited thereto.

[0210] Continuing to refer to FIGS. 19, 20, 21A, and 21B, each of the second portions 2107a-2107d and 2117a-2117d may make one or more rotations about the longitudinal axis 2001. For example, each of the second portions 2107a-2107c and 2117a-2117c may make three rotations about the longitudinal axis 2001, while each of the second portions 2107d and 2117d may make about one rotation about the longitudinal axis 2001. According to some embodiments, the rotation of the second portions 2107a-2107d of the first internal flow path 2101 may be out of phase with the rotation of the second portions 2117a-2117d of the second internal flow path 2103 such that each second portion of the second internal flow path 2103 engages with the corresponding second portion of the first internal flow path 2101. In some embodiments, the second portion 2107d of the first internal flow path 2101 may be closer to the distal end 1803 than each of the second portions 2107a-2107c. However, the embodiments are not limited to this configuration. For example, the first internal flow path 2101 may be separated from the second internal flow path 2103 such that the second portions 2107a-2107d and 2117a-2117d do not engage with each other.

[0211] According to some embodiments, the second portions 2107a-2107d of the first internal flow path 2101 are alternately arranged with the third portions 2109a-2109c of the first internal flow path 2101 along the longitudinal axis 2001. Further, the second portions 2117a-2117d of the second internal flow path 2103 are alternately arranged with the third portions 2119a-2119c of the second internal flow path 2103 along the longitudinal axis 2001. In this way, the first internal flow path 2101 and the second internal flow path 2103 may include four second portions and three third portions, but the embodiments are not limited thereto. For example, at least one of the first internal flow path 2101 and the second internal flow path 2103 may include less than four second portions, or may include five or more second portions. As another example, at least one of the first internal flow path 2101 and the second internal flow path 2103 may include less than three third portions, or may include four or more third portions. In other embodiments, the second portions 2107a-2107d of the first internal flow path 2101 may continuously exist along the longitudinal axis 2001, and then the third portions 2109a-2109c of the first internal flow path 2101 may continuously exist along the longitudinal axis 2001, or vice versa. The same may apply to the second internal flow path 2103.

[0212] Referring to FIGS. 19, 21A, and 21B, each of the third portions 2109a to 2109c of the first internal flow path 2101 includes at least one collision protrusion that narrows the passage of the first internal flow path 2101. For example, each of the third portions 2109a to 2109c includes a corresponding one of the collision protrusions 2109a_p to 2109c_p. In some embodiments, each of the third portions 2119a to 2119c of the second internal flow path 2103 includes at least one collision protrusion that narrows the passage of the second internal flow path 2103. For example, each of the third portions 2119a to 2119c includes a corresponding one of the collision protrusions 2119a_p to 2119c_p. However, the embodiments are not limited thereto. For example, at least one of the third portions 2109a to 2109c of the first internal flow path 2101 and / or at least one of the third portions 2119a to 2119c of the second internal flow path 2103 may not include any collision protrusions, or may include two or more collision protrusions.

[0213] In some embodiments, the collision protrusions 2109a_p to 2109c_p extend along the respective circumferential portions of the inner walls of the third portions 2109a to 2109c of the first internal flow path 2101, and the collision protrusions 2119a_p to 2119c_p extend along the respective circumferential portions of the inner walls of the third portions 2119a to 2119c of the second internal flow path 2103. For example, the collision protrusion 2109a_p extends along the circumferential portion 1905 of the inner wall of the third portion 2109a. According to some embodiments, the central reference plane 1907 including the reference direction 1909 and the longitudinal axis 2001 divides each of the third portions 2109a to 2109c and 2119a to 2119c into corresponding sections. For example, as can be understood from FIGS. 19 and 25, the third portion 2109a of the first internal flow path 2101 may be divided into sections 2501 and 2503, and the third portion 2119a of the second internal flow path 2103 may be divided into sections 2505 and 2507. Thus, the collision protrusions 2109a_p to 2109c_p of the third portions 2109a to 2109c of the first internal flow path 2101 may be disposed on the first side of the central reference plane 1907, and the collision protrusions 2119a_p to 2119c_p of the third portions 2119a to 2119c of the second internal flow path 2103 may be disposed on the second side of the central reference plane 1907 opposite to the first side of the central reference plane 1907. However, the embodiments are not limited thereto.

[0214] Referring to FIGS. 20, 21A, and 21B, the fifth portions 2123a-2123e of the second internal flow path 2103 may surround the fifth portion 2113 of the first internal flow path 2101. In some embodiments, the fifth portion 2113 of the first internal flow path 2101 is aligned coaxially with the fifth portions 2123a-2123e of the second internal flow path 2103. Each of the fifth portions 2123a-2123e includes an annular passage (e.g., annular passage 2125) extending along the longitudinal axis 2001. Each annular passage has a first end (e.g., first end 2125a) near the proximal end 1801 of the stem body 731 and a second end (e.g., second end 2125b) near the distal end 1803 of the stem body 731. Each second end terminates at a corresponding impact surface 2601 that includes a plurality of through-flow path orifices 2603 extending along the longitudinal axis 2001. The through-flow path orifices 2603 may be circumferentially spaced from each other about the longitudinal axis 2001. In some embodiments, the through-flow path orifices 2603 of adjacent fifth portions among the fifth portions 2123a-2123e of the second internal flow path 2103 are offset from each other such that the central axis of the through-flow path orifice 2603 of the first of the adjacent fifth portions is circumferentially displaced (e.g., non-aligned) from the central axis of the through-flow path orifice 2603 of the second of the adjacent fifth portions. For example, the central axis 2605a of the example 2603a of the through-flow path orifice 2603 of the first of the adjacent fifth portions may extend between the respective central axes 2605b and 2605c of the examples 2603b and 2603c of the through-flow path orifice 2603 of the second of the adjacent fifth portions. Note that in FIGS. 26 and 27, the central axes 2605a-2605c are shown as extending out of the page. Further, the through-flow path orifices 2603 of the fifth portion 2123c may form a plurality of examples of the second outlet 2103b of the second internal flow path 2103. Each example of the second outlet 2103b of the second internal flow path 2103 is separate from the first outlet 2101b of the first internal flow path 2101.

[0215] The second internal flow path 2103 is illustrated as including five fifth portions, but the embodiments are not limited thereto. For example, the second internal flow path 2103 may include four or fewer fifth portions, or may include six or more fifth portions. In some embodiments, the length L of the first internal flow path 2101 2101 is greater than the length L of the second internal flow path 2103 such that the distal end of the fifth portion 2113 of the first internal flow path 2101 extends farther from the proximal end 1801 of the stem body 731 than each of the distal ends of the fifth portions 2123a-2123e of the second internal flow path 2103. 2103 is greater than.

[0216] In some embodiments, the stem body 731 is manufactured as a one-piece structure. For example, one or more additive manufacturing techniques such as direct laser metal sintering (or, if a ceramic stem body is desired, a ceramic sintering process) may be utilized to form the stem body 731. In this way, each of the plurality of internal flow paths 2000 defines a corresponding continuous void within the stem body 731. Thus, each of the plurality of internal flow paths 2000 may be fluidically isolated from each other within the stem body 731. For example, the first internal flow path 2101 may be fluidically isolated from the second internal flow path 2103 within the stem body 731 such that the first internal flow path 2101 is configured to supply one or more first gases to the first inlet 1205 of the body 701 and the second internal flow path 7203 is configured to supply one or more second gases to the second inlet 1231 of the body 701.

[0217] The stem body 731 (and thus the stem 705) is shown as including two internal flow paths, but the embodiments are not limited thereto. For example, the stem body 731 may include three or more internal flow paths. As another example, the stem 705 may include a plurality of stem bodies 731 such that the stem 705 includes two or more internal flow paths.

[0218] Also, in many semiconductor wafer processing applications, such as plasma enhanced chemical vapor deposition (PECVD) processes, it is also recognized that deposition (or etching) processes can be adversely affected by variations in process parameters, such as the temperature of the target wafer and / or gas distributors such as showerhead pedestals. These variations can occur at the start of the process (e.g., before reaching a steady state), during cleaning cycles, during idling, etc. For example, when first turning on the reactor, it may take a relatively long time for the temperature of the gas distributor to stabilize. For example, the gas distributor can be heated by radiation from the wafer (or another gas distributor) and / or by plasma, and introduced at some point during processing, which can cause other temperature variations. Further, the gas distributor can be cooled by the process gas and dilution gas flowing through the gas distributor, or by radiation from the outer surface of the gas distributor. It should also be noted that temperature variations can be caused by other more permanent changes within the system, such as drift in the surface emissivity of the gas distributor. When the temperature varies, at least in part, the profile of the deposited film or etched feature can deviate significantly from the target profile. Further, operating the gas distributor at a relatively high temperature not only shortens the operating life of the gas distributor, but can also, at least in part, cause particle contamination on the gas distribution surface of the gas distributor. Such deposits can flake off and contaminate the structures formed on (or in) the substrate via the gas distributor. Thus, embodiments of the showerhead pedestal 700 may incorporate heating channels and / or cooling channels (or loops) to enable active control of the temperature of the showerhead pedestal 700. With reference to FIGS. 7B, 11, 13, 16, and 28, some examples of structures and thermal management systems will be described.

[0219] FIG. 16 schematically shows an exploded perspective view of various components of the gas distributor of FIG. 7B according to some embodiments.

[0220] Referring to FIGS. 7B, 11, 13, and 16, the showerhead pedestal 700 can include one or more electrodes and / or heating elements (hereinafter individually or collectively referred to as heating loops) 1601, a first cap (or cover) structure 1603, one or more cooling conduits and / or cooling elements (hereinafter individually or collectively referred to as cooling loops) 1605, and a second cap (or cover) structure 1607. In various embodiments, the body 701 is formed of at least one conductive material such as one or more metals and / or metal alloys. For example, the body 701 may be formed of a precipitation hardening aluminum alloy, such as an aluminum alloy like AL6061. However, it is contemplated that any other suitable material may be used. In this way, the body 701 can have thermal conductivity.

[0221] According to some embodiments, the body 701 includes a heating loop 1601 coupled to a power source (e.g., the power source 2837 of FIG. 28) to controllably heat the showerhead pedestal 700 and a substrate (such as the wafer 2901 of FIG. 29) supported thereon. The heating loop 1601 can be resistively heated and thermally coupled to the body 701. Further, the heating loop 1601 may be disposed on the body 701 and / or at least partially embedded within the body 701. For example, the body 701 may include at least one slot (or groove) 1609 in the second surface 701b configured to receive a lower portion of the heating loop 1601.

[0222] As shown in FIGS. 7B, 11, 13, and 16, a first portion 1601a of the heating loop 1601 enters the body 701 through a cavity 733 in the stem 705, bends to form a second portion 1601b within a first outer peripheral region of the body 701, bends to form a third portion 1601c within a first inner peripheral region of the body 701, bends to form a fourth portion 1601d within an inner central region of the body 701, bends to form a fifth portion 1601e within a second inner peripheral region of the body 701, bends to form a sixth portion 1601f within a second outer peripheral region of the body 701, and may bend to form a seventh portion 1601g that exits the body 701 through the cavity 733 in the stem 705. It should be noted that a first distal end 1601h of the heating loop 1601 may be coupled to a power source, and a second distal end 1601i of the heating loop 1601 may be coupled to a reference level such as ground, floating ground, or some other relatively low potential.

[0223] In some embodiments, the second portion 1601b and the sixth portion 1601f of the heating loop 1601 may generally follow a "C"-shaped path in corresponding outer peripheral regions of the body 701 that face each other. The third portion 1601c and the fifth portion 1601e of the heating loop 1601 may also generally follow a "C"-shaped path, but in corresponding inner peripheral regions of the body 701 that face each other. The corresponding outer peripheral region of the body 701 may at least partially surround the corresponding inner peripheral region of the body 701. The fourth portion 1601d of the heating loop 1601 may generally follow an "Ω"-shaped path in an inner central region of the body 701 adjacent to the distal end 1803 of the stem body 731. Further, the inner central region of the body 701 may be at least partially surrounded by the corresponding inner peripheral region of the body 701. Also, the first portion 1601a and the seventh portion 1601g of the heating loop 1601 may generally extend axially along a central axis 717 of the showerhead pedestal 700, while the second through sixth portions 1601b - 1601f of the heating loop 1601 are generally at a first distance H from a second surface 701b of the body 701 1601 (see FIG. 11) or (substantially the first distance H 1601It should be noted that it may meander within the cross-section (in the case of). However, it is considered that any other suitable path passing through and / or centered on the main body 701 may be used.

[0224] The lower part of the heating loop 1601 may be placed within the main body 701 between the bottom surface of the slot 1609 and the first cap structure 1603, and the first cap structure may be formed of at least one thermally conductive material such as one or more metals and / or metal alloys. For example, the first cap structure 1603 may be formed of the same material as the main body 701, such as an aluminum alloy, for example a precipitation hardening aluminum alloy, for example AL6061. However, it is considered that any other suitable material may be used. In this way, the first cap structure 1603 may be pushed into the slot 1609 and welded (for example, friction stir welding) to the main body 701. Due to the pressure applied to the first cap structure 1603 during welding, the heating loop 1601 may be partially deformed in some cases. Due to the applied pressure and / or the partial deformation of the heating loop 1601, in some cases, contact between one or more inner surfaces of the slot 1609 and one or more outer surfaces of the heating loop 1601 may be ensured. Thereby, the conductive heat transfer between the heating loop 1601 and the main body 701 may be improved.

[0225] The showerhead pedestal 700 may also include a cooling loop 1605 configured to maintain temperature control and compensate for temperature variations that may occur before, during, and / or after processing of the substrate. For example, the cooling loop 1605 may be utilized to compensate for temperature rises or spikes when the reactive gas is excited to generate plasma within a process chamber (such as chamber 2903 of FIG. 29) and / or when the plasma is ignited. To this end, the cooling loop 1605 may form a conduit (or tube) through which a conductive cooling fluid, such as a gas, may flow. In some embodiments, the cooling loop 1605 may be formed of a thermally conductive material such as one or more metals and / or metal alloys. For example, the cooling loop 1605 may be formed of stainless steel, although embodiments are not limited thereto. However, it should be noted that the material selection for the cooling loop 1605 should be considered in the context of the process / process recipe in which the showerhead pedestal 700 is utilized. In some cases, the wall temperature of the cooling loop 1605 may reach from about 350 °C to about 450 °C, such as from about 375 °C to about 425 °C, such as about 400 °C, and as such, the material for the cooling loop 1605 should be selected to withstand the expected / possible wall temperatures.

[0226] The outer diameter of the cooling loop 1605 can range from about 0.125 inches to about 0.375 inches, for example, from about 0.1875 inches to about 0.3125 inches. The inner diameter of the cooling loop 1605 can range from about 0.069 inches to about 0.319 inches, for example, from about 0.132 inches to about 0.215 inches. In some embodiments, the cooling loop 1605 can have an outer diameter of about 0.25 inches and an inner diameter of about 0.18 inches. Also, the length of the cooling loop 1605 within the body 701 can be about 13 inches to about 23 inches, such as about 10 inches to about 26 inches, for example, about 16 inches to about 20 inches. In some cases, the length of the cooling loop 1605 within the body 701 can be about 18 inches. Such a configuration can enable very highly turbulent clean dry air (CDA) to pass through the cooling loop 1605 at up to about 140 standard liters per minute (SLM). For example, the flow of CDA through the cooling loop 1605 can exhibit a Reynolds number (Re) greater than 2000, such as about 2500 to about 35000. However, it should be noted that the sizes of the inner diameter, outer diameter, and length of the cooling loop 1605 are not limited to these examples. For example, the sizes of the inner diameter, outer diameter, and length of the cooling loop 1605 can be dimensioned according to the desired cooling measurement criteria associated with one or more processes and / or process recipes performed in relation to the showerhead pedestal 700. The same applies to the flow rate of the conductive cooling fluid through the cooling loop 1605. For this purpose, the sizing of the inner diameter, outer diameter, and length of the cooling loop 1605 can be selected considering the selection of the materials of the cooling loop 1605 and the body 701, the length of the cooling loop 1605 within the body 701, the shape of the path of the cooling loop 1605 through the body 701, the type of conductive cooling fluid used, the flow rate of the conductive cooling fluid, the flow rate adjustment techniques imposed, and so on.

[0227] According to various embodiments, the cooling loop 1605 may be disposed on the body 701 and / or at least partially embedded within the body 701. For example, the body 701 may include at least one slot (or groove) 1611 configured to receive a lower portion of the cooling loop 1605 in the second surface 701b. As shown in FIGS. 7B, 11, 13, and 16, a first portion 1605a of the cooling loop 1605 may enter the body 701 through a cavity 733 in the stem 705, bend to form a second portion 1605b within an outer central region of the body 701, and bend to form a third portion 1605c that exits the body 701 through the cavity 733 in the stem 705. In some embodiments, the second portion 1605b of the cooling loop 1605 may follow a generally circular path in an outer central region of the body 701 adjacent to an inner central region of the stem body 701 where the heating loop 1601 extends. For this purpose, the inner central region of the body 701 may be disposed in a plan view between the outer central region of the body 701 and a portion of the body 701 coupled to the distal end 1803 of the stem body 731. Also, the first portion 1605a and the third portion 1605c of the cooling loop 1605 may generally extend axially along a central axis 717 of the showerhead pedestal 700, while the second portion 1605b of the cooling loop 1605 may generally meander within a cross-section at (or substantially at) a second distance H 1605 from the second surface 701b of the body 701. It should be noted that in some embodiments, the cooling loop 1605 may meander within a cross-section at (or substantially at) a second distance H 1605 from the second surface 701b of the body 701. In some embodiments, a first distance H 1601 may be greater than a second distance H 1605 such that the cooling loop 1605 is disposed closer to the second surface 701b of the body 701 than the heating loop 1601. However, it is contemplated that any other suitable path through and / or around the body 701 may be used.

[0228] The lower portion of the cooling loop 1605 may be placed within the body 701 between the bottom surface of the slot 1611 and the second cap structure 1607, and the second cap structure may be formed of at least one thermally conductive material such as one or more metals and / or metal alloys. For example, the second cap structure 1607 may be formed of the same material as the body 701, such as an aluminum alloy, for example a precipitation hardened aluminum alloy, such as AL6061. However, it is contemplated that any other suitable material may be used. In this way, the second cap structure 1607 may be pushed into the slot 1611 and welded (e.g., friction stir welded) to the body 701. Due to the pressure applied to the second cap structure 1607 during welding, in some cases the cooling loop 1605 may be partially deformed. Due to the applied pressure and / or the partial deformation of the cooling loop 1605, in some examples, contact between one or more inner surfaces of the slot 1611 and one or more outer surfaces of the cooling loop 1605 may be ensured. Thereby, the conductive heat transfer between the cooling loop 1605 and the body 701 may be improved.

[0229] The heating loop 1601 and the cooling loop 1605 may generally meander within a cross-section at different distances from the second surface 701b of the body 701, but the first cap structure 1603 and the second cap structure 1607 may intersect the paths. In this way, at least one of the first cap structure 1603 and the second cap structure 1607 may include one or more cutout portions that allow the passage of the other of the first cap structure 1603 and the second cap structure 1607. For example, the first cap structure 1603 may include cutout portions 1603a - 1603d that allow the passage of the second cap structure 1607.

[0230] In some embodiments, one of the first distal end 1605d and the second distal end 1605e of the cooling loop 1605 provides an inlet for a conductive cooling fluid at a first temperature (e.g., a low temperature), and the other of the first distal end 1605d and the second distal end 1605e functions as an outlet for a conductive cooling fluid at a second temperature (e.g., a high temperature). For example, assuming that CDA is used as the conductive cooling fluid at a flow rate of about 100 SLM to about 140 SLM, the CDA may enter the inlet 1605d at about 20°C and exit the outlet 1605e at about 275°C. Such metrics may enable removal of thermal energy of about 620 watts (W) to about 775 W, such as about 675 W to about 725 W, from the showerhead pedestal 700 in relation to the backside deposition process. This may enable appropriate temperature control with respect to the set temperature of the showerhead pedestal 700, as demonstrated in FIG. 17.

[0231] FIG. 17 is a graph demonstrating simulated temperature control of a gas distributor at various set temperatures and duty cycles, according to some embodiments.

[0232] To determine the effectiveness of the cooling loop 1605, an embodiment of the showerhead pedestal 700 was simulated as part of the PECVD backside deposition process, but with no substrate present. It was assumed that the body 701, outer wall 703, stem 705, first cap structure 1603 and second cap structure 1607, the processing chamber (e.g., chamber 2903 of FIG. 29), and the top plate of the processing chamber were each formed of AL6061. It was assumed that the emissivities of the body 701, outer wall 703, stem 705, and the first cap structure 1603 and second cap structure 1607 were 0.3, and that the emissivities of the processing chamber and top plate were 0.2. It was assumed that the cooling loop 1605 was formed of stainless steel, and CDA was used as the conductive cooling fluid. The showerhead facing the showerhead pedestal 700 within the processing chamber was assumed to be formed of a different type HA-12 of aluminum nitride manufactured by NGK Insulators, Ltd. Thus, it was assumed that the emissivity of the showerhead was 0.7. Further, the top plate of the processing chamber was set to 75° C., the showerhead was set to 550° C., the processing chamber was set to 75° C., and the ambient environment of the processing chamber was set to 25° C. Under these conditions, the effectiveness of the cooling loop 1605 with 140 SLM of CDA flowing was determined in conjunction with various set temperatures of the showerhead pedestal 700, such as the set temperatures shown in FIG. 17, for example 550° C., 600° C., 650° C., and 600° C., assuming different RF duty cycles, for example 0%, 5%, 7%, 10%, 20%, and 25%, and applying a higher RF power to generate plasma. In each of cases 1701 - 1705, the power used to generate plasma was 530 W. In the case of 1707, the power used to generate plasma was 2750 W. As seen in FIG. 17, the dashed line 1711 indicates that, under most of the assumed processing conditions, despite heat transfer to the showerhead pedestal 700, the simulated temperature of the showerhead pedestal 700 could be maintained at approximately 400° C. In other words, the cooling loop 1605 may enable appropriate temperature control for the set temperature of the showerhead pedestal 700 in some embodiments.

[0233] According to various embodiments, the operation of the heating loop 1601 and the cooling loop 1605 can be controlled via a thermal management system. FIG. 28 schematically shows a thermal management system configured to control the temperature of a gas distributor, according to some embodiments.

[0234] Referring to FIG. 28, cooling can be provided by a thermal management system (or system) 2800 during operation of a substrate processing system (e.g., the substrate processing system 2900 of FIG. 29) via the introduction of a convective cooling fluid (e.g., ambient air, argon, helium, nitrogen, hydrogen, CDA, and / or the like) through an inlet 2801 having a valve 2803. In some embodiments, one or more additives can be introduced into the flow before and / or after the valve 2803. The additive(s) can be used to increase the cooling efficiency and / or service life of the cooling loop 2805 and thereby the gas distributor 2807. According to one or more embodiments, the convective cooling fluid received at the inlet 2801 is CDA provided from a facility at a conventional facility pressure. Thus, it will be appreciated that different flow rates can be imposed based on different facility pressures. For example, at a facility pressure of about 80 psi, about 100 standard liters per minute (SLM) of CDA can be used. However, note that typical facility pressures can be from about 80 psi to about 100 psi, and thus the flow rate through the cooling loop 2805 can reach about 140 SLM. In the following, it is assumed that the convective cooling fluid is CDA.

[0235] Valve 2803 may be an electrically actuated valve that modulates the CDA flow through cooling loop 2805 to not only cool gas distributor 2807, but also promote turbulent flow through cooling loop 2807. Such turbulent flow can increase heat transfer from gas distributor 2807, thereby increasing the cooling efficiency of cooling loop 2805. For example, modulation of the CDA flow can not only help provide a Reynolds number of about 2500 or more, but also compensate to some extent for the energy dissipation of the CDA flow along cooling loop 2805. Also, modulation of the CDA flow may be considered to be used to reduce the cooling effect of cooling loop 2805. In some embodiments, valve 2803, in conjunction with a fluid connection to a compressed gas source, may include one or more gas amplification features (such as a constricted structure such as a Coanda profile) that can increase / decrease the flow rate (and thereby the turbulent flow) of the CDA flow through cooling loop 2805. Additionally (or alternatively), one or more throttle valves, pendulum valves, and / or other flow modulators may be disposed upstream or downstream of cooling loop 2805 and can increase / decrease the turbulent flow through cooling loop 2805. Although valve 2803 is described as an electrically actuated valve, any other suitably controllable valve may be considered to be used as (or in addition to) valve 2803. The outlet of valve 2803 is fluidly connected to the input portion 2809 of cooling loop 2807.

[0236] System 2800 also includes an outlet 2811 having a heat exchanger 2813 and an exhaust system 2815. The first inlet to the heat exchanger 2813 is fluidly connected to the outlet portion 2817 of the cooling loop 2807, and the first outlet of the heat exchanger 2813 is fluidly connected to the input conduit 2819 of the exhaust system 2815. A coolant for the heat exchanger 2813, such as a liquid coolant, can enter the heat exchanger 2813 at the second inlet 2821, follow the coolant path 2823, and exit the heat exchanger 2813 via the second outlet 2825. The coolant can be water, or any other suitable coolant, such as a refrigerant. In one embodiment, the coolant can be water provided from the facility. After exiting the heat exchanger 2813 via the second outlet 2825, the coolant may be compressed and returned to the heat exchanger 2813 for recirculation within a closed-loop coolant system, although embodiments are not limited thereto. In this way, the CDA flow from the outlet portion 2817 of the cooling loop 2805 is cooled via the heat exchanger 2813 and discharged via the exhaust system 2815.

[0237] Although the heat exchanger 2813 is described as a gas-to-liquid heat exchanger, embodiments are not limited thereto. For example, the heat exchanger 2813 may be configured as a gas-to-gas heat exchanger, in which case the configuration of the second inlet 2821 and the second outlet 2825 of the heat exchanger 2813 is reconfigured to connect in correspondence with a suitable cooling source, as well as a suitable waste disposal, recycling, and / or feedback system. When configured as a gas-to-gas heat exchanger, the cooling fluid can be, for example, ambient air, argon, helium, nitrogen, hydrogen, CDA, and / or sources of the like.

[0238] According to some embodiments, the CDA output from the heat exchanger 2813 may be approximately the same as, or slightly above, the ambient temperature and pressure. In some embodiments, the temperature of the CDA output from the heat exchanger 2813 can be 20°C or more and 65°C or less. However, it should be noted that the heat exchanger 2813 can be configured to ensure that any residual heat in the discharge from the cooling loop 2805 is maintained within the output-based environmental regulatory limits.

[0239] The conduit 2819 can be coupled to a conduit 2827 that is part of (or fluidly connected to) the exhaust system 2815. In some embodiments, the exhaust system 2815 can be a scrub exhaust system. Thus, any environmentally controlled components, constituents, by-products, etc. of the effluent from the first outlet of the heat exchanger 2813 can be scrubbed via the scrubber 2827 along with other effluents 2829 of the substrate processing system and / or the surrounding environment.

[0240] According to some embodiments, heating of the gas distributor 2807 can be provided by a thermal management system (or system) 2800 via a heating loop 2833, such as the heating loop 1601 described in connection with FIG. 16. In this way, the input portion 2835 of the heating loop 2833 may receive power from a power source 2837, and the output portion 2839 of the heating loop 2833 may be coupled to a reference level 2841, such as ground, floating ground, or some other relatively low potential. In some cases, the radio frequency (RF) power applied to the gas distributor 2807 or at least one other component within a chamber of a semiconductor processing system (e.g., chamber 2903 of FIG. 29) can exceed 100 W and can even exceed 1000 W. Thus, the amplitude of the RF voltage can exceed 1 kilovolt. Such RF power, if not filtered or isolated, can affect the operation of the control circuit and power supply circuit of the heating loop 2833. In some embodiments, an RF filter can be used to shunt the RF power away from the control circuit and power supply circuit. The RF filter may be a simple broadband filter or a tuned filter for a given RF frequency used in a semiconductor processing system. In contrast, an RF isolator eliminates a direct electrical connection between any RF coupling component and the control circuit and power supply circuit, e.g., via an optical coupler or transformer. Thus, at least one RF component (e.g., filter, isolator, and / or the like) 2843 can be electrically connected between the power source 2837 and the input portion 2835, and at least one RF component 2845 can be electrically connected between the output portion 2839 and the reference level 2841.

[0241] According to some embodiments, the control module (or controller) 2847 is configured to operate various components of the system 2800, such as the valve 2803 and the power supply 2837, to actively control the temperature of the gas dispenser 2807. In some embodiments, feedback information may be provided to the controller 2847 from one or more sensors 2849, such as one or more thermocouples. The sensor 2849 may be configured to monitor the temperature of at least one of the cooling loop 2805, the gas dispenser 2807, and the heating loop 2833. In some cases, at least one sensor 2849 may be configured to monitor the temperature of the conductive cooling fluid in at least one portion, such as the upstream, downstream, or input portion 2809, output portion 2817, etc., of the cooling loop 2805. Also, one or more of the sensors 2849 may be thermally coupled (or embedded) to various portions of the gas dispenser 2807, such as the first surface 2807a, the second surface 2807b, and the body portion 2807c. Similar to the power supply 2837 and the reference level 2841, one or more RF components 2851 may be electrically connected between the sensor 2849 and the controller 2847 to reduce or eliminate interference with the signal from the sensor 2849.

[0242] In some embodiments, the controller 2847 may receive feedforward information 2853 from at least one other system or tool and / or at least one other controller (e.g., control module 2913 of FIG. 29, system controller 3023 of FIG. 30, etc.) associated with at least one other gas dispenser of a multistation processing tool (e.g., multistation processing tool 3000). In this way, the controller 2847 may utilize the feedforward information 2853 to predict processing events and control the temperature of the gas dispenser 2807. For example, the controller 2847 may predict a cooling event, such as a chamber purge event, and increase the power input to the heating loop 2833, or predict a heating event, such as before or during activation of a process gas, and decrease the power input to the heating loop 2833. Similarly, the controller 2847 may predict a heating event and increase the cooling input to the cooling loop 2805 by increasing the flow of the conductive fluid, or predict a cooling event and decrease the cooling input by decreasing the flow of the conductive fluid. Thus, various combinations of various heating inputs and / or cooling inputs may be used to accurately control the temperature of the gas dispenser 2807, whether proactively or reactively. Further, one or more features or functions of the controller 2847 may be shared with, assumed by, or negotiated between at least one other controller (e.g., control module 2913 of FIG. 29, system controller 3023 of FIG. 30, etc.).

[0243] FIG. 29 schematically illustrates a substrate processing system (or system) 2900 that may be used to process a wafer 2901, according to some embodiments.

[0244] System 2900 includes chamber 2903. The central post is configured to support the pedestal when the surface of wafer 2901 is being processed, for example when a film is being formed on the surface of wafer 2901. The pedestal may be referred to as a showerhead pedestal 2905 in some embodiments. Showerhead 2907 is disposed on top of showerhead pedestal 2905. In one embodiment, showerhead 2907 is electrically coupled to power supply 2909 via matching network 2911. Thus, power supply 2909 may be controlled by a control module 2913, such as a controller. In some embodiments, power may be supplied to showerhead pedestal 2905 instead of (or in addition to) showerhead 2907. Control module 2913 is configured to operate system 2900 by executing one or more sequences of one or more instructions that define at least one process recipe. Depending on whether the front or back surface of wafer 2901 is to receive the deposited film, control module 2913 may set various operational inputs for defining the process recipe, such as power level, timing parameters, process gas, mechanical movement of wafer 2901, height of wafer 2901 from showerhead pedestal 2905, etc.

[0245] The central post may also include lift pins, which may be controlled, for example, by a lift pin control signal from control module 2913. The lift pins may be used to raise wafer 2901 from showerhead pedestal 2905 so that an end effector can pick up wafer 2901 and lower wafer 2901 after it has been placed by the end effector. The end effector may also place wafer 2901 on spacer 2915. As described below, spacer 2915 is sized to provide a controlled separation of wafer 2901 between the surface of showerhead 2907 facing wafer 2901 and the surface of showerhead pedestal 2905 facing wafer 2901.

[0246] System 2900 further includes, for example, gas sources 2917 and 2919 of gas chemical feeds and / or dilution (e.g., inert) gases from a facility. Depending on the process being performed on the surface of wafer 2901, control module 2913 may control the delivery of gas source 2917 to showerhead 2907 and / or showerhead pedestal 2905. In some embodiments, gas manifold 2921 may be fluidly interposed between gas source 2917 and showerhead 2907, and gas manifold 2923 may be fluidly interposed between gas source 2919 and showerhead pedestal 2905. Appropriate valve adjustments and mass flow control mechanisms are employed and may be controlled via control module 2913 to ensure that the appropriate gases are delivered during the deposition and plasma processing stages of the process. In some embodiments, at least one of stem 2925 of showerhead 2907 and stem 2927 of showerhead pedestal 2905 may include one or more internal flow paths that include one or more structures configured to induce turbulent flow along its longitudinal axis as the received gas(es) flow from one of each of gas sources 2917 and 2919 to the corresponding body of showerhead 2907 and showerhead pedestal 2905. In some embodiments, chamber 2903 may include openings 2903a and 2903b through which portions of stems 2925 and 2927 respectively extend. Exemplary stem structures are described in relation to at least FIGS. 7B, 8, 12B, 12C, 18A, 18B, 19, 20, 21A, 21B, and 22-27. The gas flow to showerhead 2907 and showerhead pedestal 2905 is output and thereby distributed within the volumetric space between wafer 2901 and the corresponding surfaces of showerhead 2907 and showerhead pedestal 2905 facing wafer 2901 via one or more gas distribution structures of showerhead 2907 and showerhead pedestal 2905. Exemplary gas distributors are described in relation to at least FIGS. 7A, 7B, 8, 9A-9C, 10, 11, 12A-12C, 13-16, 18A, 18B, 19, 20, 21A, 21B, and 22-27.

[0247] During substrate processing, the spacer 2915 is configured to maintain a predetermined separation from the wafer 2901 from the gas distribution surface of the showerhead pedestal 2905 in order to promote (e.g., optimize) deposition on the back surface of the wafer 2901 while reducing (or even preventing) deposition on the front surface of the wafer 2901. In some embodiments, while deposition is targeted at the back surface of the wafer 2901, one or more inert gases are flowed over the front surface of the wafer 2901 through the showerhead 2907 to push the reactive gas away from the front surface of the wafer 2901 and enable the reactive gas(es) output from the showerhead pedestal 2905 to be directed towards the back side of the wafer 2901.

[0248] In various embodiments, the process gas and / or dilution gas exits the chamber 2903 through an outlet that is fluidly coupled to a vacuum pump 2929, which can be, for example, a one- or two-stage mechanical dry pump and / or a turbomolecular pump. In this way, the process gas and / or dilution gas can be withdrawn from the chamber 2903 and the pressure within the chamber 2903 can be appropriately maintained low. For this purpose, a closed-loop flow restrictor, such as a throttle valve or a pendulum valve, can be controlled via the control module 2913 to more reliably keep the pressure within the chamber 2903 appropriately low.

[0249] System 2900 may further include a carrier ring 2931 that surrounds an outer region of the showerhead pedestal 2905. When the front surface of the wafer 2901 is being processed, for example when material is being deposited thereon, the carrier ring 2931 is configured to seat on a carrier ring support region that is one step down from the wafer support region at the center (or central portion) of the showerhead pedestal 2905. The carrier ring 2931 includes an outer edge side of its disk structure, for example an outer radius, and an inner edge side of the wafer of its disk structure, for example an inner radius closest to where the wafer 2901 is supported. The wafer edge side of the carrier ring 2931 may include a plurality of contact support structures configured to lift the wafer 2901 when the carrier ring 2931 is held by the spacer 2915. In this way, the spider fork 3001 (see FIG. 30) can be used, for example, to lift the carrier ring 2931 and maintain it at a predetermined height during backside deposition processing, and can also be used to rotate the wafer 2901 about an axis perpendicular to the surface of, for example, the showerhead 2907 or the showerhead pedestal 2905. Thus, the carrier ring 2931 can also be lifted (or otherwise operated) together with the wafer 2901 and, for example, rotated to another station within a multi-station system such as the multi-station processing tool 3000.

[0250] According to various embodiments, system 2900 may include a thermal management system 2933, such as the thermal management system 2800 of FIG. 28, or communicate with a thermal management system 2933 to actively control the temperature of the showerhead 2907 and / or the showerhead pedestal 2905.

[0251] FIG. 30 schematically shows a multi-station processing tool configured for backside wafer deposition according to some embodiments.

[0252] In some embodiments, the multi-station processing tool 3000 can include an inbound load lock 3003 and an outbound load lock 3005, either or both of which can include a plasma source and / or an ultraviolet (UV) source. The robot 3007 is configured to move the wafer from the cassette loaded through the pod 3009 at atmospheric pressure to the inbound load lock 3003 via the atmospheric port 3011. The wafer 2901 is placed on the pedestal 3013 within the inbound load lock 3003 by the robot 3007, the atmospheric port 3011 is closed, and the inbound load lock 3003 is pumped down. In an example where the inbound load lock 3003 includes a remote plasma source, the wafer 2901 may be exposed to remote plasma processing within the inbound load lock 3003 before being introduced into the processing chamber 3015. Further, the wafer 2901 may be heated within the inbound load lock 3003, for example, to remove moisture and / or adsorbed gas. Next, the chamber transfer port 3017 to the processing chamber 3015 is opened, and another robot 3019 places the wafer 2901 on a pedestal within the reactor at the first station shown within the reactor for processing. The embodiment illustrated in FIG. 13 includes a load lock, but it will be understood that in some embodiments, the wafer 2901 may be placed directly into the process station.

[0253] As shown in FIG. 30, the processing chamber 3015 includes four process stations numbered 1 to 4. Each station has a temperature control pedestal (such as the temperature control pedestal 3021 of station 1) and a gas line inlet. It will be understood that in some cases each process station may have different purposes or multiple purposes. For example, in some embodiments, the process station may be switchable between CVD and PECVD process modes. In another example, a deposition operation such as PECVD operation may be performed within one station, while exposure to UV radiation for UV curing may be performed within another station. In some embodiments, deposition and UV curing may be performed within the same station. Further, although the processing chamber 3015 is shown to include four stations, embodiments are not limited thereto. For example, the processing chamber 3015 may have any suitable number of stations, such as five or more stations, or three or fewer stations.

[0254] As described above, the multi-station processing tool 3000 may include a wafer transfer system (e.g., robot 3019 including spider fork 3001) for transferring and / or positioning wafers within the processing chamber 3015. In some embodiments, the wafer transfer system may transfer wafers between various process stations and / or between a process station and a load lock. However, it is contemplated that any suitable wafer transfer system may be employed, such as, for example, a wafer rotary conveyor, other wafer transfer robots, etc. Further, the multi-station processing tool 3000 may include (or otherwise be coupled to) a system controller 3023 used to control the process conditions and hardware state of the multi-station processing tool 3000. The system controller 3023 may include one or more memory devices 3025, one or more mass storage devices 3027, and one or more processors 3029. Each processor 3029 may include a central processing unit (CPU) or computer, analog and / or digital input / output connections, a stepper motor controller board, etc.

[0255] In some embodiments, system controller 3023 controls each of the functions of multi-station processing tool 3000. For example, system controller 3023 may execute system control software 3031 stored in mass storage device 3027, loaded into memory device 3025, and executed by processor 3029. Alternatively, the control logic may be hard-coded in system controller 3023. For these purposes, application specific integrated circuits (ASICs), and / or programmable logic devices (e.g., field programmable gate arrays (FPGAs)) and / or the like may be used. In the following description, whenever "software" or "code" is used, functionally equivalent hard-coded logic may be used instead. System control software 3031 may include instructions for controlling timing, gas mixing, gas flow rate, chamber and / or station pressure, chamber and / or station temperature, wafer temperature, target power level, RF power level, substrate pedestal, chuck and / or susceptor position, and other parameters of specific processes performed by multi-station processing tool 3000. System control software 3031 may be configured in any suitable manner. For example, various process tool component subroutines or control objects may be written to control the operation of process tool components used to execute various process tool processes. System control software 3031 may be coded in any suitable computer-readable programming language.

[0256] In some embodiments, the system control software 3031 may include input / output control (IOC) sequence instructions for controlling the various parameters described above. In some embodiments, other computer software and / or programs stored in the mass storage device 3027 and / or the memory device 3025 associated with the system controller 3023 may be employed. Examples of programs or sections of programs for this purpose include a substrate positioning program, a process gas control program, a pressure control program, a heater control program, a cooler control program, and a plasma control program.

[0257] The substrate positioning program may include program code of process tool components used to load and orient the wafer 2901 on the pedestal 3021 and to control the spacing between the wafer 2901 and other parts of the multi-station processing tool 3000.

[0258] The process gas control program may include code for controlling the composition of the gas (e.g., a silicon-containing gas, an oxygen-containing gas, a nitrogen-containing gas, a dilution (or inert) gas, etc., as described herein) and the flow rate, and optionally code for flowing the gas through one or more process stations prior to deposition to stabilize the pressure of the process station. The pressure control program may include code for controlling the pressure within the process station, for example, by adjusting the throttle valve of the exhaust system of the process station, the gas flow to the process station, etc.

[0259] The heater control program may include code for controlling the current to a heating unit (e.g., the heating loop 1601 of FIG. 16) used to heat a gas distributor (e.g., the showerhead 2907, the showerhead pedestal 2905, etc.) and thereby heat the wafer 2901. Alternatively, the heater control program may control the supply of a heat transfer gas (such as helium) to the gas distributor and thereby to the wafer 2901.

[0260] The cooler control program may include code for removing heat from gas distributors such as the showerhead 2907 and the showerhead pedestal 2905 and for controlling the flow rate of a fluid (e.g., CDA) through a cooling unit (e.g., the cooling loop 1605 of FIG. 16) that is used to transfer such thermal energy to, for example, a waste heat collection, storage, recycling, and / or disposal system.

[0261] The plasma control program may include code for setting the RF power level applied to the process electrodes of one or more process stations according to various embodiments.

[0262] The pressure control program may include code for maintaining the pressure within the reaction chamber according to various embodiments.

[0263] In some embodiments, a user interface may be provided in connection with the system controller 3023. The user interface may include a display screen, a graphical software display of the apparatus and / or process conditions, and user input devices such as a pointing device, a keyboard, a touch screen, a microphone, and the like.

[0264] In some embodiments, the parameters adjusted by the system controller 3023 may be related to the process conditions. Non-limiting examples include the composition and flow rate of the process gas, temperature, pressure, plasma conditions (such as the RF bias power level), pressure, temperature, and the like. These parameters may be provided to the user in the form of a recipe or may be input using the user interface.

[0265] Signals for monitoring the process may be provided by analog and / or digital input connections of the system controller 3023 from various process tool sensors. Signals for controlling the process may be output at the analog and / or digital output connections of the multi-station process tool 3000. Non-limiting examples of process tool sensors that may be monitored include mass flow controllers, pressure sensors (such as manometers), thermocouples, and the like. Appropriately programmed feedback and control algorithms can be used with data from the sensors to maintain process conditions.

[0266] The system controller 3023 may provide program instructions for performing one or more of the above processes. The program instructions may control various process parameters such as DC power level, RF bias power level, pressure, temperature, etc. The instructions may control parameters for operating the deposition of the film stack of the stress compensation layer according to various embodiments.

[0267] The system controller 3023 typically includes one or more memory devices and one or more processors configured to execute the instructions, as a result of which the apparatus executes the method according to some embodiments. In some examples, a machine-readable medium containing instructions for controlling process operations according to various embodiments may be coupled to the system controller 3023.

[0268] In some embodiments, system controller 3023 can be part of a system that can be part of at least one of the above examples. Such a system can include a semiconductor processing apparatus that includes one or more processing tools, one or more chambers, one or more processing platforms, and / or certain processing components (e.g., wafer pedestals, gas flow systems, thermal management systems, etc.). The system described above may be integrated with electronics for controlling its operation before, during, and / or after the processing of a semiconductor wafer or substrate. This electronics may sometimes be referred to as a "controller" and may control various components or sub-parts of one or more systems. For example, system controller 3023 may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or the type of system, including the supply of processing gases, temperature settings (e.g., heating and / or cooling), valve operation, control of light sources for radiant heating, pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position settings and motion settings, loading and unloading of wafers to and from tools or chambers, and loading and unloading of wafers to and from other transfer tools and / or load locks that connect or interface with a particular system. Thus, system controller 3023 can be configured to control various actuators and motors of a backside wafer processing system, among other systems.

[0269] Broadly speaking, the system controller 3023 can be defined as an electronic device having various integrated circuits, logic, memory, and / or software, such as receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, and enabling end point measurement. The integrated circuit may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions are instructions transmitted to the system controller 3023 in the form of various individual settings (or program files), and may define operation parameters for executing a specific process on or for a semiconductor wafer or for the system. In some embodiments, the operation parameters may be part of a recipe defined by a process engineer to achieve one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon oxide, surfaces, circuits, dies, etc. of the wafer.

[0270] In some embodiments, system controller 3023 may be part of a computer integrated with the system, coupled to the system, or otherwise network-connected to the system, or may be coupled to such a computer, or may be a combination thereof. For example, system controller 3023 may be within the “cloud,” or may be all or part of a fab host computer system, thereby enabling remote access to wafer processing. The computer enables remote access to the system, monitors the current progress of fabrication operations, analyzes the history of past fabrication operations, analyzes trends or performance metrics from multiple fabrication operations, and changes the parameters of the current process, sets the processing steps following the current process, or starts a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system through a network that may include a local network or the Internet. The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters of each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is configured to interact with or control. Thus, as described above, system controller 3023 can be distributed, such as by including one or more individual controllers that are network-connected to each other and operate towards a common purpose such as the processes and controls described herein. Examples of distributed controllers for such purposes include one or more integrated circuits on a chamber that are remotely located (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits combined to control the process on the chamber.

[0271] Without limitation, examples of systems can include a plasma etching chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and / or any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacture of semiconductor wafers.

[0272] As described above, depending on one or more process steps performed by the tool, the system controller 3023 may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, proximate tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to load and unload wafer containers at tool positions and / or load ports within a semiconductor manufacturing facility.

[0273] Unless otherwise specified, the illustrated embodiments are to be understood as providing exemplary features of various details of some embodiments. Thus, unless otherwise specified, various features, components, modules, layers, films, regions, aspects, structures, etc. (hereinafter individually or collectively referred to as one or more "elements") of the various descriptions can be otherwise combined, separated, exchanged, and / or rearranged without departing from the teachings of the present disclosure.

[0274] The terms used in this specification are for the purpose of describing some embodiments and are not intended to be limiting. As used in this specification, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used in this specification, "for each of one or more (items)", "each of one or more (items)", and / or similar phrases include both single-item groups and multiple-item groups; that is, the phrase "for each" is used in the sense used in programming languages to refer to each item in a collective of the items being referred to. For example, if the collective of the items being referred to is a single item, "each" refers only to that single item (even though in the dictionary definition of "each", it is frequently defined as referring to "any one of two or more"), and it does not mean that there must be at least two of those items. Similarly, the terms "set" or "subset" should not be considered as necessarily including multiple items in themselves, and it should be understood that a set or subset can include only one element or multiple elements (unless the context indicates otherwise). As used in this specification, the terms "comprise", "comprising", "include", and / or "including" specify the presence of the described features, integers, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Also, as used in this specification, the terms "substantially", "about", and similar terms are used as terms of approximation and not as terms of degree, and thus it should be noted that they are used to account for the inherent deviations of measured, calculated, and / or specified values that would be recognized by those skilled in the art. Thus, the term "substantially" as used in this specification means within 5% of the reference value, unless otherwise specified. For example, substantially vertical means within ±5% of parallel.

[0275] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify the boundaries between adjacent elements. Thus, the presence or absence of cross-hatching or shading does not convey, or indicate, any preference or requirement with respect to particular materials, material properties, dimensions, ratios, commonality between the elements shown, and / or any other characteristics, attributes, qualities, etc. of the elements, unless otherwise specified. Further, in the accompanying drawings, the sizes and relative sizes of elements may be exaggerated for purposes of clarity and / or illustration. Accordingly, the sizes and relative sizes of each element are not necessarily limited to the sizes and relative sizes shown in the drawings. Where embodiments may be implemented differently, the particular process order may be performed differently than the order described. For example, two processes described in sequence may be performed substantially simultaneously or in an order opposite to the order described.

[0276] When an element such as a layer is said to be "on," "connected to," or "coupled to" another element, the element may be immediately above the other element, directly connected to the other element, or directly coupled to the other element, or there may be at least one intervening element. However, when an element is said to be "immediately above," "directly connected to," or "directly coupled to" another element, there is no intervening element. When used herein to describe the relationship between elements, other terms and / or phrases should be interpreted similarly, such as "directly between" for "between," "directly adjacent" for "adjacent," "immediately above" for "above," etc. Further, the term "connected" can refer to a physical, electrical, and / or fluid connection. For this purpose, for the purposes of the present disclosure, the phrase "fluidly connected" is used in the same way as the phrase "electrically connected" is used with respect to components that are connected to form an electrical connection, with respect to volumes, plenums, holes, etc. that are connected to each other directly or through one or more intervening components or volumes to form a fluid connection. The phrase "fluidly intervening," when used, refers to components, volumes, plenums, holes, etc. that are fluidly connected to at least two other components, volumes, plenums, holes, etc. such that fluid flowing from one of these other components, volumes, plenums, holes, etc. to another of these components, volumes, plenums, holes, etc. or another thing first flows through the "fluidly intervening" component before reaching the other of these components, volumes, plenums, holes, etc. or another thing. For example, if a pump is fluidly intervening between a reservoir and an outlet, the fluid flowing from the reservoir to the outlet first flows through the pump before reaching the outlet. The phrase "fluidly adjacent," when used, refers to the placement of a fluid element relative to another fluid element such that there is no possibility that a structure that could potentially impede the flow of fluid between the two fluid elements is fluidly intervening between the two elements.For example, in a flow path having a first valve, a second valve, and a third valve arranged in sequence, the first valve is fluidly adjacent to the second valve, the second valve is fluidly adjacent to both the first valve and the third valve, and the third valve is fluidly adjacent to the second valve.

[0277] For the purposes of the present disclosure, "at least one of X, Y, ···, and Z" and "at least one selected from the group consisting of X, Y, ···, and Z" can be interpreted as only X, only Y, ···, only Z, or any combination of two or more of X, Y, ···, and Z such as, for example, XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any combination of one or more of the associated listed items.

[0278] In this specification, terms such as "first", "second", "third", etc. may be used to describe various elements, but these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, the first element described below could be called the second element without departing from the teachings of this disclosure. For this purpose, the use of such designations, such as "first element", should not be read as implicitly or inherently suggesting that there must necessarily be another example, such as a "second element". Further, in this disclosure and the appended claims, when ordinal indicators such as (a), (b), (c), ···, or (1), (2), (3), ··· are used, it should be understood that their use does not convey any particular ordinal or order except to the extent that such ordinal or order is explicitly indicated. For example, if there are three steps labeled (i), (ii), and (iii), it should be understood that these steps can be performed in any order (or, if not otherwise prohibited, even simultaneously) unless specifically instructed otherwise. For example, if step (ii) involves processing an element generated in step (i), step (ii) can be considered to occur at some point after step (i). Similarly, if step (i) involves processing an element generated in step (ii), the reverse should be understood.

[0279] In this specification, spatially relative terms such as "beneath", "below", "under", "lower", "above", "upper", "over", "higher", "side" (e.g., in the case of "side wall", etc.) are used for illustrative purposes, so that, as shown in the drawings, the spatial relationship of one element to at least one other element can be described. The spatially relative terms are intended to encompass different directions of the device in use, operation, and / or manufacture in addition to the directions shown in the drawings. For example, if the device in the drawings is turned upside down, an element described as "below" or "beneath" another element or feature will then be oriented "above" or "over" the other element or feature. Thus, the term "below" can encompass both upward and downward directions. Further, the device may be oriented in other directions (e.g., rotated 90 degrees or in other directions), and thus, the spatially relative descriptors used herein are to be interpreted accordingly.

[0280] As used herein, the term "between", when used with a range of values, is to be understood to include the beginning and ending values of the range unless otherwise indicated. For example, "between 1 and 5" is to be understood to include not only the numbers 2, 3, and 4, but also the numbers 1, 2, 3, 4, and 5.

[0281] As used herein, the phrase "operatively connected" is to be understood to mean that two components and / or systems are directly or indirectly connected such that, for example, at least one of the components or systems can control the other. For example, a controller may be described as being operatively connected to (or with) a resistive heating unit, which includes that the controller is connected to a sub-controller of the resistive heating unit, which is electrically connected to a relay configured to controllably connect or disconnect the resistive heating unit to or from a power source that is capable of providing an amount of electrical power to supply the resistive heating unit to generate a desired degree of heating. The controller itself may not be likely to directly supply such power to the resistive heating unit for the relevant current(s), but still the controller is to be understood as being operatively connected to the resistive heating unit.

[0282] As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used herein, the phrases "for each of one or more (items)", "each of one or more (items)", and / or similar phrases include both single-item groups and multiple-item groups; that is, the phrase "for each" is to be understood as used in the sense in which it is used in a programming language to refer to each item in a collective of the items being referred to. For example, if the collective of items being referred to is a single item, "each" refers only to that single item (even though in the dictionary definition of "each" it is frequently defined as referring to "any and all of two or more things"), and does not mean that there must be at least two of those items. Similarly, the terms "set" or "subset" should not be regarded as necessarily including a plurality of items per se, and it should be understood that a set or subset can include only one element or can include a plurality of elements (except where the context indicates otherwise). Additionally, as used herein, the terms "comprise", "comprising", "include", and / or "including" specify the presence of the stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0283] In this specification, various embodiments are described with reference to cross-sectional views, isometric views, perspective views, plan views, and / or exploded views, which are schematic diagrams of ideal embodiments and / or intermediate structures. Therefore, for example, variations from the illustrated shapes are expected as a result of manufacturing techniques and / or tolerances. Accordingly, the embodiments disclosed herein should not be construed as limited to the shapes of the specific illustrated ranges, but should be construed to include, for example, shape variations resulting from manufacturing. For this reason, the ranges illustrated in the drawings are essentially schematic, and the shapes of these ranges may not reflect the actual shapes of the device ranges and, as such, are not intended to be limiting.

[0284] Unless otherwise defined, all terms (including technical and scientific terms) used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. Terms defined as in a commonly used dictionary should be construed to have a meaning that coincides with the meaning in the context of the relevant art and should not be construed in an idealized or overly formal sense unless explicitly defined herein.

[0285] As a convention in this field, some embodiments are described and illustrated in the accompanying drawings from the perspective of functional blocks, units, and / or modules. Those skilled in the art will understand that these blocks, units, and / or modules can be physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, hardwired circuits, memory elements, wiring connections, etc., which can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. When the blocks, units, and / or modules are implemented by a microprocessor or other similar hardware, they are programmed and controlled using software (e.g., microcode) to perform the various functions described herein and can optionally be driven by firmware and / or software. Also, each block, unit, and / or module can be implemented by dedicated hardware or as a combination of dedicated hardware for performing some functions and a processor (e.g., one or more programmed microprocessors and associated circuits) for performing other functions. Further, each block, unit, and / or module of some embodiments may be physically separated into two or more interacting individual blocks, units, and / or modules without departing from the concept of the present invention. Additionally, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the teachings of the present disclosure.

[0286] The above-described embodiments are described in some detail for purposes of clarity of understanding, but it will be apparent that certain changes and modifications can be made within the scope of the appended claims. It should be noted that there are many alternative ways to implement the processes, systems, and apparatuses of the disclosed embodiments. Therefore, the embodiments should be considered illustrative rather than limiting, and the embodiments should not be limited to the details given herein.

[0287] Furthermore, while the above disclosure focuses on certain exemplary one or more embodiments, it is not limited to only the examples described, and may also be applicable to similar variations and mechanisms, and it should be understood that such similar variations and mechanisms are also considered to be within the scope of this disclosure. To avoid any ambiguity, it should also be understood that the above disclosure is at least directed to the following numbered embodiments, and other embodiments apparent from the above disclosure.

[0288] Embodiment 1: The apparatus includes a stem body and a plurality of internal flow paths. The stem body includes a proximal end and a distal end. The proximal end includes a plurality of inlets, each of the inlets being distinct from one another and configured to receive a corresponding one or more gases. The distal end is disposed on the opposite side of the proximal end along the longitudinal axis of the stem body, the distal end is configured to connect to a gas distributor of a deposition apparatus, the distal end includes a plurality of outlets, and at least one of the outlets is distinct from at least another one of the outlets. The plurality of internal flow paths includes a first internal flow path and a second internal flow path, each of the internal flow paths extending between a corresponding one of the inlets and at least one corresponding one of the outlets such that the internal flow paths are distinct from one another, and each of the internal flow paths includes one or more structures configured to induce turbulent flow along the longitudinal axis of the stem body in response to a flow of a corresponding one or more gases along that internal flow path.

[0289] Embodiment 2: The apparatus of Embodiment 1, wherein the inlet includes a first inlet and a second inlet, the axis of the first inlet is spaced apart from the longitudinal axis of the stem body in a first direction, a first portion of the first internal flow path extends longitudinally along the axis of the first inlet, the axis of the second inlet is spaced apart from the longitudinal axis of the stem body in a second direction different from the first direction, and a first portion of the second internal flow path extends longitudinally along the axis of the second inlet.

[0290] Embodiment 3: The apparatus according to either Embodiment 1 or 2, wherein in this apparatus, one or more structures define one or more second portions of the first internal flow path, and each of the second portions of the first internal flow path is along a first helical path centered on the longitudinal axis of the stem body, one or more structures define one or more second portions of the second internal flow path, and each of the second portions of the second internal flow path is along a second helical path centered on the longitudinal axis of the stem body.

[0291] Embodiment 4: The apparatus according to Embodiment 3, wherein in this apparatus, the first and second helical paths are out of phase with each other such that each second portion of the second internal flow path meshes with the corresponding second portion of the first internal flow path.

[0292] Embodiment 5: The apparatus according to either Embodiment 3 or Embodiment 4, wherein in this apparatus, one or more first structures further define one or more third portions of the first internal flow path, and each of the third portions of the first internal flow path extends linearly along the longitudinal axis of the stem body, and one or more second structures further define one or more third portions of the second internal flow path, and each of the third portions of the second internal flow path extends linearly along the longitudinal axis of the stem body.

[0293] Embodiment 6: The apparatus according to Embodiment 5, wherein in this apparatus, each of the third portions of the first internal flow path is spaced apart from the longitudinal axis of the stem body in a second direction, and each of the third portions of the second internal flow path is spaced apart from the longitudinal axis of the stem body in a first direction.

[0294] Embodiment 7: The apparatus according to either Embodiment 5 or Embodiment 6, wherein in this apparatus, each of the third portions of the first internal flow path defines a first chamber including at least one first collision protrusion that narrows the passage of the first internal flow path, and each of the third portions of the second internal flow path defines a second chamber including at least one second collision protrusion that narrows the passage of the second internal flow path.

[0295] Embodiment 8: The apparatus of Embodiment 7, wherein in this apparatus, at least one first collision protrusion extends along a first circumferential portion of the inner wall of the first chamber, and at least one second collision protrusion extends along a second circumferential portion of the inner wall of the second chamber.

[0296] Embodiment 9: The apparatus of Embodiment 8, wherein in this apparatus, a central reference plane divides the first and second chambers into corresponding sections, the central reference plane extends parallel to the longitudinal axis of the stem body, intersects the longitudinal axis of the stem body, and the first circumferential portion of the first chamber and the second circumferential portion of the second chamber are arranged on opposite sides of the central reference plane.

[0297] Embodiment 10: The apparatus according to any one of Embodiments 7 to 9, wherein in this apparatus, the first chamber includes a plurality of first collision protrusions, and the second chamber includes a plurality of second collision protrusions.

[0298] Embodiment 11: The apparatus according to any one of Embodiments 5 to 10, wherein in this apparatus, one or more second portions of the first internal flow path are alternately arranged with one or more third portions of the first internal flow path along the longitudinal axis of the stem body, and one or more second portions of the second internal flow path are alternately arranged with one or more third portions of the second internal flow path along the longitudinal axis of the stem body.

[0299] Embodiment 12: The apparatus according to any one of Embodiments 5 to 11, wherein in this apparatus, the first internal flow path includes four second portions and three third portions, and the second internal flow path includes four second portions and three third portions.

[0300] Embodiment 13: The apparatus according to Embodiment 12, wherein in this apparatus, three of the four second portions of the first internal flow path include at least three rotations about the longitudinal axis of the stem body, one of the four second portions of the first internal flow path includes at least one rotation about the longitudinal axis of the stem body, one of the four second portions of the first internal flow path is closer to the distal end of the stem body than three of the four second portions of the first internal flow path, three of the four second portions of the second internal flow path include at least three rotations about the longitudinal axis of the stem body, and one of the four second portions of the second internal flow path includes at least one rotation about the longitudinal axis of the stem body, and one of the four second portions of the second internal flow path is closer to the distal end of the stem body than three of the four second portions of the second internal flow path.

[0301] Embodiment 14: The apparatus according to any one of Embodiments 5 to 13, wherein in this apparatus, at least one of the outlets defines the outlet of the first internal flow path, and the fourth portion of the first internal flow path extends longitudinally along the axis of at least one of the outlets, and the axis of at least one of the outlets extends along the longitudinal axis of the stem body.

[0302] Embodiment 15: The apparatus according to Embodiment 14, wherein in this apparatus, the axis of at least one of the outlets is aligned coaxially with the longitudinal axis of the stem body.

[0303] Embodiment 16: The apparatus according to any one of Embodiment 14 or Embodiment 15, wherein in this apparatus, one or more structures further define one or more fourth portions of the second internal flow path, each of the fourth portions of the second internal flow path surrounds the fourth portion of the first internal flow path, each of the fourth portions of the second internal flow path includes an annular passage extending along the longitudinal axis of the stem body, each annular passage includes a first end close to the proximal end of the stem body and a second end close to the distal end of the stem body, and each second end terminates at a corresponding impact surface including a plurality of through-flow orifices extending along the longitudinal axis of the stem body, and the corresponding plurality of through-flow orifices are circumferentially spaced apart from each other about the longitudinal axis of the stem body.

[0304] Embodiment 17: The apparatus of Embodiment 16, wherein in this apparatus, each annular passage is aligned coaxially with the longitudinal axis of the stem body.

[0305] Embodiment 18: The apparatus according to any one of Embodiment 16 or Embodiment 17, wherein in this apparatus, the second internal flow path includes a plurality of fourth portions axially arranged along the longitudinal axis of the stem body, and the first central axis of the through-flow path orifice of one of the plurality of fourth portions is circumferentially displaced from the second central axis of the through-flow path orifice of another one of the plurality of fourth portions.

[0306] Embodiment 19: The apparatus of Embodiment 18, wherein in this apparatus, the first central axis does not coincide with the second central axis.

[0307] Embodiment 20: The apparatus according to any one of Embodiment 18 or Embodiment 19, wherein in this apparatus, the through-flow path orifice of one of the fourth portions of the second internal flow path defines a plurality of outlets at the distal end of the stem body, and the plurality of outlets are separate from the outlet of the first internal flow path.

[0308] Embodiment 21: The apparatus according to any one of Embodiments 16 to 20, wherein in this apparatus, the second internal flow path includes five fourth portions.

[0309] Embodiment 22: The apparatus according to any one of Embodiments 16 to 21, wherein in this apparatus, the fourth portion of the first internal flow path extends farther from the proximal end of the stem body than each of the fourth portions of the second internal flow path.

[0310] Embodiment 23: The apparatus according to any one of Embodiments 1 to 22, wherein in this apparatus, the stem body is an additive manufacturing part, and the internal flow path defines a continuous void within the stem body.

[0311] Embodiment 24: An apparatus according to any one of Embodiments 1 to 23, wherein in this apparatus, the stem body is formed of an aluminum alloy.

[0312] Embodiment 25: An apparatus according to any one of Embodiments 1 to 24, wherein in this apparatus, the internal flow paths are fluidly isolated from each other within the stem body.

[0313] Embodiment 26: An apparatus according to any one of Embodiments 1 to 25, wherein in this apparatus, the gas distributor is a shower head pedestal of a deposition apparatus.

[0314] Embodiment 27: An apparatus according to any one of Embodiments 1 to 25, wherein in this apparatus, the gas distributor is a shower head of a deposition apparatus.

[0315] Embodiment 28: An apparatus according to any one of Embodiments 1 to 27, wherein in this apparatus, the internal flow paths further include at least a third internal flow path.

[0316] Embodiment 29: The apparatus includes a showerhead. The showerhead includes a first surface, a second surface, and a stem body. The first surface includes a plurality of first inlets. The second surface faces the first surface and includes a plurality of gas distribution ports. The stem body includes a proximal end, a distal end, and a plurality of internal flow paths. The proximal end includes a plurality of second inlets, each of the second inlets being distinct from one another and configured to receive one or more gases. The distal end is disposed on the opposite side of the proximal end along the longitudinal axis of the stem body, the distal end is coupled to the first surface of the showerhead, and the distal end includes a plurality of outlets that connect to the plurality of first inlets, at least one of the outlets being distinct from at least another one of the outlets. Each of the internal flow paths extends between a corresponding second inlet of the second inlets and at least one corresponding outlet of the outlets such that the internal flow paths are fluidly isolated from one another within the stem body, and each of the internal flow paths includes one or more structures configured to induce turbulent flow along the longitudinal axis of the stem body in response to a flow of one or more gases. A first internal flow path of the internal flow paths is fluidly connected to a first group of gas distribution ports. A second internal flow path of the internal flow paths is fluidly connected to a second group of gas distribution ports that is different from the first group.

[0317] Embodiment 30: The apparatus of Embodiment 29, wherein the showerhead is a showerhead pedestal configured to support a substrate at or near its periphery such that the back surface of the substrate is substantially exposed to the plurality of gas distribution ports.

[0318] Embodiment 31: The apparatus of any one of Embodiment 29 or Embodiment 30, further including a process chamber configured to support therein a first portion of the stem body and the showerhead, the process chamber including an opening through which a second portion of the stem body extends to expose the proximal end.

[0319] Embodiment 32: The apparatus includes a main body. The main body includes a first surface and a second surface facing the first surface in a first direction. The first surface includes a plurality of gas distribution ports and is divided into a plurality of zones. The plurality of gas distribution ports include a first group of gas distribution ports, a second group of gas distribution ports, and a third group of gas distribution ports. The first gas distribution ports are distributed over a first zone among the zones, and each first gas distribution port is fluidly connected to one or more first gas inlets via a corresponding first gas distribution flow path. The second gas distribution ports are distributed over a second zone among the zones, and each second gas distribution port is fluidly connected to one or more second gas inlets via a corresponding second gas distribution flow path. The third gas distribution ports are distributed over a third zone among the zones, and each third gas distribution port is fluidly connected to one or more of the third gas inlets via a corresponding third gas distribution flow path. The first zone separates the second zone from the third zone. Within the main body, the first gas distribution flow path is separated from each of the second and third gas distribution flow paths.

[0320] Embodiment 33: The apparatus according to Embodiment 32, wherein in this apparatus, one or more of the second gas inlets also define one or more of the third gas inlets.

[0321] Embodiment 34: An apparatus according to any one of Embodiment 32 or Embodiment 33, wherein in this apparatus, the first gas distribution flow path is configured to provide one or more first gases to the first gas distribution port such that the output of the one or more first gases from the first gas distribution port exhibits a first gas flow profile across the first zone, the second gas distribution flow path is configured to provide one or more second gases to the second gas distribution port such that the output of the one or more second gases from the second gas distribution port exhibits a second gas flow profile across the second zone, the third gas distribution flow path is configured to provide one or more second gases to the third gas distribution port such that the output of the one or more second gases from the third gas distribution port exhibits a third gas flow profile across the third zone, and the first, second, and third gas flow profiles are different for the same inlet / outlet boundary conditions.

[0322] Embodiment 35: An apparatus according to Embodiment 34, wherein in this apparatus, the first gas flow profile is substantially uniform, the second gas flow profile varies in at least one direction across the second zone, and the third gas flow profile varies in at least one direction across the third zone.

[0323] Embodiment 36: An apparatus according to Embodiment 35, wherein in this apparatus, each of the second and third gas flow profiles increases as the distance from the first gas flow profile increases.

[0324] Embodiment 37: An apparatus according to any one of Embodiments 32 to 36, wherein in this apparatus, each of the second and third zones includes a first arrangement of gas distribution ports having a first spatial relationship and a second arrangement of gas distribution ports having a second spatial relationship different from the first spatial relationship.

[0325] Embodiment 38: An apparatus according to Embodiment 37, wherein in this apparatus, the second spatial relationship includes gas distribution ports arranged more closely than the first spatial relationship.

[0326] Embodiment 39: An apparatus according to any one of Embodiment 37 or Embodiment 38, in which the first gas distribution port is distributed over the first zone according to a first spatial arrangement.

[0327] Embodiment 40: An apparatus according to any one of Embodiment 37 or Embodiment 38, in which the first arrangement of the gas distribution ports surrounds the second arrangement of the gas distribution ports.

[0328] Embodiment 41: An apparatus according to any one of Embodiments 37 to 40, in which the second arrangement of the gas distribution ports is closer to the periphery of the first surface than to the center of the first surface.

[0329] Embodiment 42: An apparatus according to any one of Embodiments 32 to 36, in which the group of second gas distribution ports includes a first sub-group of second gas distribution ports distributed over a first sub-zone of the second zone and a second sub-group of second gas distribution ports distributed over a second sub-zone of the second zone, where the second sub-zone of the second zone is adjacent to the first sub-zone of the second zone, and the group of third gas distribution ports includes a first sub-group of third gas distribution ports distributed over a first sub-zone of the third zone and a second sub-group of third gas distribution ports distributed over a second sub-zone of the third zone, where the second sub-zone of the third zone is adjacent to the first sub-zone of the third zone.

[0330] Embodiment 43: The apparatus of Embodiment 42, wherein in this apparatus, under the same inlet / outlet boundary conditions, for the second gas distribution flow paths, each of the respective flow conductances along each of these second gas distribution flow paths associated with the second sub-group of the second gas distribution ports is configured to be greater than each of the respective flow conductances along each of these second gas distribution flow paths associated with the first sub-group of the second gas distribution ports, and for the third gas distribution flow paths, each of the respective flow conductances along each of these third gas distribution flow paths associated with the second sub-group of the third gas distribution ports is configured to be greater than each of the respective flow conductances along each of these third gas distribution flow paths associated with the first sub-group of the third gas distribution ports.

[0331] Embodiment 44: The apparatus of Embodiment 42, wherein in this apparatus, the group of second gas distribution ports is a third sub-group of second gas distribution ports distributed over a third sub-zone of the second zone, the third sub-zone of the second zone being between the first and second sub-zones of the second zone, and further includes a third sub-group of second gas distribution ports, and the group of third gas distribution ports is a third sub-group of third gas distribution ports distributed over a third sub-zone of the third zone, the third sub-zone of the third zone being between the first and second sub-zones of the third zone, and further includes a third sub-group of third gas distribution ports.

[0332] Embodiment 45: The apparatus of Embodiment 44, wherein in this apparatus, under the same inlet / outlet boundary conditions, for each of these second gas distribution channels associated with the third sub-group of the second gas distribution ports, the respective flow conductance along each of these second gas distribution channels is greater than the respective flow conductance along each of these second gas distribution channels associated with the first sub-group of the second gas distribution ports, and less than the respective flow conductance along each of these second gas distribution channels associated with the second sub-group of the second gas distribution ports, and for each of these third gas distribution channels associated with the third sub-group of the third gas distribution ports, the respective flow conductance along each of these third gas distribution channels is greater than the respective flow conductance along each of these third gas distribution channels associated with the first sub-group of the third gas distribution ports, and less than the respective flow conductance along each of these third gas distribution channels associated with the second sub-group of the third gas distribution ports.

[0333] Embodiment 46: The apparatus according to any one of Embodiment 44 or Embodiment 45, wherein in this apparatus, the third sub-zone of the second zone includes a sub-part configured such that the first plurality of second gas distribution ports of the third sub-group of the second gas distribution ports are different from the second plurality of second gas distribution ports of the third sub-group of the second gas distribution ports, and the third sub-zone of the third zone includes a sub-part configured such that the first plurality of third gas distribution ports of the third sub-group of the third gas distribution ports are different from the second plurality of third gas distribution ports of the third sub-group of the third gas distribution ports.

[0334] Embodiment 47: The apparatus of Embodiment 46, wherein in this apparatus, the first plurality of second gas distribution ports of the third sub-group of the second gas distribution ports are arranged more densely than the second plurality of second gas distribution ports of the third sub-group of the second gas distribution ports, and the first plurality of third gas distribution ports of the third sub-group of the third gas distribution ports are arranged more densely than the second plurality of third gas distribution ports of the third sub-group of the third gas distribution ports.

[0335] Embodiment 48: An apparatus according to any one of Embodiments 32 to 47, wherein in this apparatus, the main body includes a plurality of passages extending in a second direction different from the first direction, the passages are spaced apart from each other in a third direction different from the second direction, and each of the passages is fluidly connected to a corresponding plurality of gas distribution ports.

[0336] Embodiment 49: An apparatus according to Embodiment 48, wherein in this apparatus, the cross-sectional area of each of the passages in a plane perpendicular to the second direction is substantially equal.

[0337] Embodiment 50: An apparatus according to Embodiment 48, wherein in this apparatus, the cross-sectional area of at least one of the passages in a plane perpendicular to the second direction is different from the cross-sectional area of at least another one of the passages in a plane perpendicular to the second direction.

[0338] Embodiment 51: An apparatus according to any one of Embodiments 48 to 50, wherein in this apparatus, the corresponding pitch between adjacent passages among the passages is substantially equal.

[0339] Embodiment 52: An apparatus according to any one of Embodiments 48 to 50, wherein in this apparatus, the first plurality of passages are arranged in the third direction at a first pitch, and the second plurality of passages are arranged in the third direction at a second pitch different from the first pitch.

[0340] Embodiment 53: An apparatus according to any one of Embodiments 48 to 52, the apparatus further including an outer wall surrounding the main body. The main body includes a third surface extending between a first surface and a second surface, a plurality of first blind cavities recessed in the third surface and arranged around the main body, and a plurality of second blind cavities recessed in the third surface and arranged around the main body, each of the first blind cavities being arranged between the first surface and a corresponding one of the second blind cavities in a first direction. The main body further includes a plurality of second blind cavities. A part of the third surface extending between the first blind cavities and the second blind cavities forms a partition wall. The partition wall includes a plurality of recesses in the third surface, each recess being arranged between corresponding ones of the first and second blind cavities adjacent to each other in the first direction, and together with the inner surface of the outer wall, forming respective gas flow paths that fluidly connect the corresponding ones of the first and second blind cavities.

[0341] Embodiment 54: An apparatus according to Embodiment 53, in which each of the first blind cavities is fluidly connected to one or more of the passages.

[0342] Embodiment 55: An apparatus according to either Embodiment 53 or Embodiment 54, in which some of the passages fluidly connect two of the first blind cavities to each other, and the two first blind cavities face each other with respect to the central axis of the main body extending in the first direction.

[0343] Embodiment 56: An apparatus according to any one of Embodiments 53 to 55, in which each first blind cavity in a first group of the first blind cavities has a first opening region facing the inner surface of the outer wall, is fluidly connected to a first component of the passages, and each first blind cavity in a second group of the first blind cavities has a second opening region facing the inner surface of the outer wall, is fluidly connected to a second component of the passages, the second opening region being larger than the first opening region, and the second component being larger than the first component.

[0344] Embodiment 57: An apparatus according to any one of Embodiments 53 to 56, the apparatus including a plurality of first elongated holes in the body extending radially from a first central region of the body, each of the first elongated holes having a corresponding proximal end fluidly connected to at least one of one or more first inlets and a corresponding distal end fluidly connected to one of a plurality of second blind cavities so as to form at least one corresponding portion of a first gas distribution flow path; and a plurality of second elongated holes in the body extending radially from a second central region of the body, each of the second elongated holes having a corresponding proximal end fluidly connected to at least one of one or more second inlets and one or more third inlets and a corresponding distal end fluidly connected to one of a plurality of second blind cavities so as to form at least one corresponding portion of second and third gas distribution flow paths.

[0345] Embodiment 58: An apparatus according to Embodiment 57, wherein each of the first elongated holes extends within a first planar region of the body, each of the second elongated holes extends within a second planar region of the body different from the first planar region of the body, and the first planar region is closer to a second surface of the body than the second planar region.

[0346] Embodiment 59: An apparatus according to Embodiment 58, wherein each of the first and second planar regions is closer to the second surface than each of the passages.

[0347] Embodiment 60: An apparatus according to any one of Embodiments 57 to 59, wherein, in a corresponding plane perpendicular to the respective longitudinal directions of the first and second elongated holes, the cross-sectional area of each of the first and second elongated holes is equal.

[0348] Embodiment 61: An apparatus according to any one of Embodiments 57 to 59, wherein in this apparatus, the first group of second blind cavities is physically and fluidly directly connected to the first elongated hole and is separated from the second elongated hole inside the main body, the second group of second blind cavities is physically and fluidly directly connected to the second elongated hole and is separated from the first elongated hole inside the main body, the second group of second blind cavities is the first subgroup of the second blind cavities, and each second blind cavity of the first subgroup of the second blind cavities is physically and fluidly directly connected to one distal end of the second elongated hole among the distal ends of the second elongated hole, and the second subgroup of the second blind cavities, and each second blind cavity of the second subgroup of the second blind cavities is physically and fluidly directly connected to two distal ends of the second elongated hole among the distal ends of the second elongated hole.

[0349] Embodiment 62: An apparatus according to Embodiment 61, wherein in this apparatus, the first group of second blind cavities is arranged in the first region of the main body, the first subgroup of the second blind cavities is arranged in the second region of the main body, and the second subgroup of the second blind cavities is arranged in the third region of the main body, and the second region of the main body is between the first region and the third region of the main body.

[0350] Embodiment 63: An apparatus according to Embodiment 62, wherein in this apparatus, the second region is arranged on both sides of the first region, and the third region is arranged on both sides of the second region and on both sides of the first region.

[0351] Embodiment 64: An apparatus according to either Embodiment 62 or Embodiment 63, wherein in this apparatus, each of the first elongated holes has a substantially equivalent first cross-sectional area in a plane perpendicular to its respective direction of longitudinal extension, each of the second elongated holes associated with the first subgroup of the second blind cavities has a substantially equivalent second cross-sectional area in a plane perpendicular to its respective direction of longitudinal extension, each of the second elongated holes associated with the second subgroup of the second blind cavities has a substantially equivalent third cross-sectional area in a plane perpendicular to its respective direction of longitudinal extension, and the first, second, and third cross-sectional areas are different from each other.

[0352] Embodiment 65: An apparatus according to Embodiment 64, wherein in this apparatus, the third cross-sectional area is larger than the second cross-sectional area, and the second cross-sectional area is larger than the first cross-sectional area.

[0353] Embodiment 66: An apparatus according to any one of Embodiments 32 to 65, further including a cooling conduit thermally coupled to the body, the cooling conduit having an inlet configured to receive clean dry air (CDA) at a first temperature and an outlet configured to output CDA at a second temperature different from the first temperature. The body includes a first groove recessed in a second surface, and a portion of the cooling conduit extends within the first groove.

[0354] Embodiment 67: An apparatus according to Embodiment 66, further including a first cap structure that encloses the cooling conduit within the first groove in a compressed state.

[0355] Embodiment 68: An apparatus according to either Embodiment 66 or Embodiment 67, wherein in this apparatus, the cooling conduit is formed of stainless steel.

[0356] Embodiment 69: An apparatus according to any one of Embodiments 66 to 68, wherein in this apparatus, the cooling conduit is sized to enable a CDA flow rate of up to approximately 140 standard liters per minute at a Reynolds number exceeding approximately 2500.

[0357] Embodiment 70: The device according to any one of Embodiments 66 to 69, further including a resistive heating element. The main body further includes a second groove recessed in the second surface, and a part of the resistive heating element extends into the second groove.

[0358] Embodiment 71: The device according to Embodiment 70, in which, in the first direction, the second groove extends deeper into the second surface than the first groove, and in the radial direction perpendicular to the first direction, the outermost portion of the second groove is closer to the periphery of the main body than the outermost portion of the first groove.

[0359] Embodiment 72: The device according to any one of Embodiments 32 to 71, further including a process chamber configured to support the main body therein. The main body forms part of a shower head.

[0360] Embodiment 73: The device according to Embodiment 72, in which the shower head is a shower head pedestal configured to support the substrate such that most of the back surface of the substrate is exposed to a plurality of gas distribution ports.

[0361] Embodiment 74: The device according to any one of Embodiments 32 to 73, in which the main body is formed of an aluminum alloy.

Claims

1. An apparatus, wherein the apparatus comprises: a stem body, the stem body comprising: a proximal end including a plurality of inlets, each of the inlets being distinct from one another and configured to receive a corresponding one or more gases; a distal end disposed on the opposite side of the proximal end along the longitudinal axis of the stem body, the distal end being configured to connect to a gas distributor of a deposition apparatus, the distal end including a plurality of outlets, at least one of the outlets being distinct from at least another one of the outlets; a plurality of internal flow paths including a first internal flow path and a second internal flow path, each of the internal flow paths extending between a corresponding one of the inlets and at least one corresponding outlet of the outlets such that the internal flow paths are distinct from one another; each of the internal flow paths including one or more structures configured to induce turbulent flow along the longitudinal axis of the stem body in response to a corresponding one or more gas flows along that internal flow path; and the apparatus.

2. The apparatus according to claim 1, wherein the inlets include a first inlet and a second inlet, an axis of the first inlet is spaced from the longitudinal axis of the stem body in a first direction, a first portion of the first internal flow path extends longitudinally along the axis of the first inlet, an axis of the second inlet is spaced from the longitudinal axis of the stem body in a second direction different from the first direction, and a first portion of the second internal flow path extends longitudinally along the axis of the second inlet. The apparatus.

3. The apparatus according to any one of claims 1 to 2, wherein the one or more structures define one or more second portions of the first internal flow path, each of the second portions of the first internal flow path being along a first helical path centered on the longitudinal axis of the stem body, the one or more structures define one or more second portions of the second internal flow path, each of the second portions of the second internal flow path being along a second helical path centered on the longitudinal axis of the stem body, and the first and second helical paths are out of phase with each other such that each second portion of the second internal flow path intertwines with a corresponding second portion of the first internal flow path.

4. The apparatus according to claim 3, wherein The one or more first structures further define one or more third portions of the first internal flow path, and each of the third portions of the first internal flow path extends linearly along the longitudinal axis of the stem body and The one or more second structures further define one or more third portions of the second internal flow path, and each of the third portions of the second internal flow path extends linearly along the longitudinal axis of the stem body, apparatus. **Claim 5** The apparatus according to claim 4, each of the third portions of the first internal flow path is spaced apart from the longitudinal axis of the stem body in the second direction, and each of the third portions of the second internal flow path is spaced apart from the longitudinal axis of the stem body in the first direction, apparatus. **Claim 6** The apparatus according to claim 5, each of the third portions of the first internal flow path defines a first chamber including at least one first collision protrusion that narrows the passage of the first internal flow path, and each of the third portions of the second internal flow path defines a second chamber including at least one second collision protrusion that narrows the passage of the second internal flow path, apparatus. **Claim 7** The apparatus according to claim 6, the at least one first collision protrusion extends along a first circumferential portion of the inner wall of the first chamber, the at least one second collision protrusion extends along a second circumferential portion of the inner wall of the second chamber, a central reference plane divides the first and second chambers into corresponding compartments, the central reference plane extends parallel to the longitudinal axis of the stem body, intersects the longitudinal axis of the stem body, and the first circumferential portion of the first chamber is disposed on the opposite side of the central reference plane from the second circumferential portion of the second chamber, apparatus. **Claim 8** The apparatus according to claim 4, the one or more second portions of the first internal flow path are alternately arranged with the one or more third portions of the first internal flow path along the longitudinal axis of the stem body, and the one or more second portions of the second internal flow path are alternately arranged with the one or more third portions of the second internal flow path along the longitudinal axis of the stem body, apparatus. **Claim 9** The apparatus according to claim 4, the first internal flow path includes four second portions and three third portions, and The apparatus, wherein the second internal flow path includes four second portions and three third portions. **Claim 10** The apparatus according to claim 9, wherein three of the four second portions of the first internal flow path include at least three rotations about the longitudinal axis of the stem body, one of the four second portions of the first internal flow path includes at least one rotation about the longitudinal axis of the stem body, and the one of the four second portions of the first internal flow path is closer to the distal end of the stem body than the three of the four second portions of the first internal flow path, wherein three of the four second portions of the second internal flow path include at least three rotations about the longitudinal axis of the stem body, and one of the four second portions of the second internal flow path includes at least one rotation about the longitudinal axis of the stem body, and the one of the four second portions of the second internal flow path is closer to the distal end of the stem body than the three of the four second portions of the second internal flow path. **Claim 11** The apparatus according to claim 4, wherein the at least one of the outlets defines an outlet of the first internal flow path, and a fourth portion of the first internal flow path extends longitudinally along an axis of the at least one of the outlets, and the axis of the at least one of the outlets extends along the longitudinal axis of the stem body. **Claim 12** The apparatus according to claim 11, wherein the one or more structures further define one or more fourth portions of the second internal flow path, each of the fourth portions of the second internal flow path surrounds the fourth portion of the first internal flow path, each of the fourth portions of the second internal flow path includes an annular passage extending along the longitudinal axis of the stem body, each annular passage including a first end closer to the proximal end of the stem body and a second end closer to the distal end of the stem body, and each second end terminates at a corresponding impact surface including a plurality of through-flow path orifices extending along the longitudinal axis of the stem body, the plurality of corresponding through-flow path orifices being circumferentially spaced from each other about the longitudinal axis of the stem body. Apparatus. **Claim 13** The apparatus according to claim 12, The second internal flow path includes a plurality of fourth portions axially arranged along the longitudinal axis of the stem body, the first central axis of the through-flow path orifice of one of the plurality of fourth portions is circumferentially offset from the second central axis of the through-flow path orifice of another of the plurality of fourth portions, and the first central axis does not coincide with the second central axis, Device.

14. The device according to claim 13, wherein the through-flow path orifice of the one fourth portion of the second internal flow path defines a plurality of outlets at the distal end of the stem body, and the plurality of outlets are separate from the outlet of the first internal flow path. Device.

15. The device according to claim 12, wherein the second internal flow path includes five of the fourth portions. Device.

16. The device according to claim 12, wherein the fourth portion of the first internal flow path extends further from the proximal end of the stem body than each of the fourth portions of the second internal flow path. Device.

17. The device according to claim 1, wherein the stem body is an additive manufacturing part, and the internal flow path defines a continuous void within the stem body. Device.

18. A device, wherein the device comprises a shower head, the shower head including a first surface having a plurality of first inlets, a second surface opposite the first surface and including a plurality of gas distribution ports, a stem body, a proximal end including a plurality of second inlets, each of the second inlets being separate from each other and configured to receive one or more gases, a distal end disposed on the opposite side of the proximal end along the longitudinal axis of the stem body, the distal end being coupled to the first surface of the shower head, the distal end including a plurality of outlets connecting to the plurality of first inlets, at least one of the outlets being separate from at least another one of the outlets. Distal end. A plurality of internal flow paths, each of the internal flow paths extending between a corresponding second inlet of the second inlets and at least one corresponding outlet of the outlets such that the internal flow paths are fluidly isolated from each other within the stem body, and each of the internal flow paths including one or more structures configured to induce turbulent flow along the longitudinal axis of the stem body in response to a flow of one or more gases, the plurality of internal flow paths comprising a first internal flow path of the internal flow paths being fluidly connected to a first group of the gas distribution ports, and a second internal flow path of the internal flow paths being fluidly connected to a second group of the gas distribution ports different from the first group a stem body and an apparatus.

19. The apparatus according to claim 18, wherein the shower head is a shower head pedestal configured to support the substrate at or near its periphery such that the back surface of the substrate is substantially exposed to the plurality of gas distribution ports.

20. The apparatus according to any one of claims 18 or 19, further comprising a process chamber configured to support therein a first portion of the stem body and the shower head, the process chamber including an opening through which a second portion of the stem body extends to expose the proximal end.

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