Process Kit and Related Method for a Processing Chamber that Facilitates Tunability of a Deposition Process

Abstract

The present disclosure relates to a flow guide, a process kit, and related methods for a processing chamber that facilitates the adjustability of a deposition process. In one embodiment, the flow guide includes a spacer having a first side surface and a second side surface opposite the first side surface along a first direction. The first side surface and the second side surface are arcuate. The flow guide includes a first flange that extends outwardly relative to a third side surface of the spacer and outwardly relative to an outer surface of the spacer, and a second flange that extends outwardly relative to a fourth side surface of the spacer and outwardly relative to the outer surface of the spacer. The fourth side surface is opposite the third side surface along a second direction that intersects the first direction. The flow guide includes a rectangular flow opening defined between the first flange and the second flange.

Description

Technical Field

[0001]

[0001] This disclosure relates to a process kit and related methods for a processing chamber that facilitates adjustability of a deposition process.

Background Art

[0002]

[0002] Semiconductor substrates are processed for a wide range of applications including the manufacture of integrated devices and microdevices. During processing, various parameters can affect the uniformity of the material deposited on the substrate. For example, the temperature of the substrate and / or the temperature of one or more processing chamber components can affect deposition uniformity.

[0003]

[0003] It can be difficult to adjust parameters (such as gas flow rate and gas pressure) for deposition uniformity. When the substrate is rotated, the adjustment can be even more difficult. Relatively low rotation speeds, high pressures, and low flow rates can also make the adjustment more difficult. Additionally, it can become difficult to clean the components of the processing chamber.

[0004]

[0004] Accordingly, there is a need for improved process kits and related methods that facilitate adjustment of process parameters and cleaning of processing chamber components, for example, at low rotation speeds, high pressures, and low flow rates.

Summary of the Invention

[0005]

[0005] This disclosure relates to a flow guide, a process kit, and related methods for a processing chamber that facilitate adjustment of a deposition process. One or more process gases flow over a substrate through a rectangular flow opening and form one or more layers on the substrate. In one or more embodiments, the rectangular flow opening is defined between a first flat inner surface of a first flange and a second flat inner surface of a second flange. In one or more embodiments, the flow guide includes one or more openings that are openable and closable to allow one or more cleaning gases to flow into an internal volume that is at least partially defined by the window.

[0006]

[0006] In one embodiment, a process kit for deposition in a process chamber applicable for use in semiconductor manufacturing includes a flow guide. The flow guide includes a spacer having a first side surface and a second side surface opposite the first side surface along a first direction. The first side surface and the second side surface are arcuate. The flow guide includes a first flange extending outwardly with respect to a third side surface of the spacer and outwardly with respect to an outer surface of the spacer, and a second flange extending outwardly with respect to a fourth side surface of the spacer and outwardly with respect to the outer surface of the spacer. The fourth side surface is opposite the third side surface along a second direction intersecting the first direction. The flow guide includes a rectangular flow opening defined between a first flat inner surface of the first flange and a second flat inner surface of the second flange.

[0007]

[0007] In one embodiment, a process chamber applicable for use in semiconductor manufacturing includes a window at least partially defining an internal volume, a plurality of lamps, and a substrate support disposed within the internal volume. The substrate support includes a support surface. The process chamber includes a process kit disposed within the internal volume. The process kit includes a flow guide. The flow guide includes a spacer disposed between the support surface and the plurality of lamps. The spacer has a first side surface and a second side surface opposite the first side surface along a first direction. The first side surface and the second side surface are arcuate. The process kit includes a first flange extending outwardly with respect to a third side surface of the spacer and outwardly with respect to an outer surface of the spacer, and a second flange extending outwardly with respect to a fourth side surface of the spacer and outwardly with respect to the outer surface of the spacer. The fourth side surface is opposite the third side surface along a second direction intersecting the first direction. The flow guide includes a rectangular flow opening defined between a first flat inner surface of the first flange and a second flat inner surface of the second flange.

[0008]

[0008] In one embodiment, a method of processing a substrate includes heating a substrate positioned on a substrate support and flowing one or more process gases over the substrate to form one or more layers on the substrate. Flowing one or more process gases over the substrate includes guiding one or more process gases through a rectangular flow opening of a process kit. The method includes lifting at least a portion of the process kit to open one or more first openings and one or more second openings. The method includes flowing one or more cleaning gases through one or more first openings to flow into a region between a flow guide and a window, and flowing one or more cleaning gases through the region to flow into one or more second openings.

[0009]

[0009] In one embodiment, a flow guide applicable for use in semiconductor manufacturing includes a plate having a first surface and a second surface opposite the first surface. The flow guide includes a first fin set extending from the second surface and a second fin set extending from the second surface. The second fin set is positioned spaced apart from the first fin set and defines a flow path between the first fin set and the second fin set. The flow path has a meandering pattern between the first fin set and the second fin set.

[0010]

[0010] In one embodiment, a flow guide applicable for use in semiconductor manufacturing includes a plate having a first surface and a second surface opposite the first surface. The flow guide includes a first fin set extending from the second surface. The first fin set includes a plurality of first fins positioned spaced apart from each other and defining a first set of flow paths. The flow guide includes a second fin set extending from the second surface. The second fin set includes a plurality of second fins positioned spaced apart from each other and defining a second set of flow paths. The flow guide includes a central flow path between a first inner fin of the first fin set and a second inner fin of the second fin set.

[0011]

[0011] In one embodiment, a method of processing a substrate includes heating a substrate positioned on a substrate support and flowing one or more process gases over the substrate to form one or more layers on the substrate. Flowing one or more process gases over the substrate includes guiding the one or more process gases through one or more flow paths at least partially defined by a plurality of fins extending from a flow guide plate. The method includes moving the plate to adjust the distance between the plurality of fins and the substrate.

[0012]

[0012] In one embodiment, a process kit for deposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first surface and a second surface opposite the first surface. The process kit includes a liner. The liner includes an annular section and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second surface of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side surface of the liner and one or more outlet openings extending to an inner surface of the annular section on a second side surface of the liner.

[0013]

[0013] In one embodiment, a processing chamber applicable for use in semiconductor manufacturing includes an internal volume, a plurality of lamps, and a substrate support disposed within the internal volume. The substrate support includes a support surface. The processing chamber includes a window at least partially defining the internal volume. The window includes a concave or flat first surface and a convex second surface, and the second surface faces the substrate support.

[0014]

[0014] In one embodiment, a method of processing a substrate includes heating a substrate positioned on a substrate support within a chamber and flowing one or more process gases over the substrate to form one or more layers on the substrate. Flowing one or more process gases over the substrate includes guiding one or more process gases between a plate and the substrate. The plate is supported on a liner and divides the processing volume into a lower portion and an upper portion. The method includes exhausting one or more process gases and flowing one or more cleaning gases through the upper portion while the plate is supported on the liner. The upper portion is between the plate and the window. The method includes exhausting one or more cleaning gases.

Brief Description of the Drawings

[0015]

[0015] To enable a more detailed understanding of the above-described features of the present disclosure, a more detailed description of the present disclosure, briefly summarized above, can be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered as limiting the scope thereof, and other equally effective embodiments may be permitted.

[0016]

Figure 1

[0016] FIG. 1 is a schematic side cross-sectional view of a processing chamber according to one embodiment.

Figure 2

[0017] FIG. 2 is a schematic block diagram of a control system for use inside the processing chamber shown in FIG. 1 according to one embodiment.

Figure 3

[0018] FIG. 3 is a schematic partial side cross-sectional view of a processing chamber with a process kit in a processing position according to one embodiment.

Figure 4

[0019] FIG. 4 is a schematic partial side cross-sectional view of a processing chamber with a process kit (shown in FIG. 3) in a cleaning position according to one embodiment.

Figure 5

[0020] It is a schematic partial perspective view of a process kit shown in FIGS. 3 and 4 according to one embodiment.

Figure 6

[0021] It is a schematic graph plotting the relationship between temperature and x position according to one embodiment.

Figure 7

[0022] It is a schematic partial side cross-sectional view of a processing chamber in which a process kit is at a processing position according to one embodiment.

Figure 8

[0023] It is a schematic partial side cross-sectional view of a processing chamber in which a process kit (shown in FIG. 7) is at a cleaning position according to one embodiment.

Figure 9

[0024] It is a schematic partial side cross-sectional view of an upper liner according to one embodiment.

Figure 10

[0025] It is a schematic top view of a process kit according to one embodiment.

Figure 11

[0026] It is a schematic side view of a lock extension shown in FIG. 10 according to one embodiment.

Figure 12

[0027] It is a schematic top view of the spatial configuration of a process kit disposed in a processing chamber according to one embodiment.

Figure 13

[0028] It is a schematic partial side cross-sectional view of a processing chamber in which a process kit is at a processing position according to one embodiment.

Figure 14

[0029] It is an enlarged cross-sectional view of a processing chamber shown in FIG. 13 according to one embodiment.

Figure 15

[0030] It is a schematic partial side cross-sectional view of a processing chamber in which a process kit (shown in FIG. 13) is at a cleaning position according to one embodiment.

Figure 16

[0031] It is an enlarged cross-sectional view of a processing chamber shown in FIG. 15 according to one embodiment.

Figure 17

[0032] It is a schematic top view of a flow guide and a cover shown in FIG. 13 according to one embodiment.

Figure 18

[0033] A schematic bottom view of a flow guide and a cover shown in FIG. 13 according to one embodiment.

Figure 19

[0034] A schematic top view of a flow guide shown in FIG. 13 according to one embodiment.

Figure 20

[0035] A schematic perspective view of the bottom of a flow guide shown in FIG. 13 according to one embodiment.

Figure 21

[0036] A schematic top view of a cover shown in FIG. 13 according to one embodiment.

Figure 22

[0037] A schematic perspective view of the bottom of a cover shown in FIG. 13 according to one embodiment.

Figure 23

[0038] A schematic partial side cross-sectional view of a processing chamber with a process kit in a processing position according to one embodiment.

Figure 24

[0039] A schematic partial side cross-sectional view of a processing chamber with a process kit (shown in FIG. 23) in a cleaning position according to one embodiment.

Figure 25

[0040] A schematic top view of a process kit shown in FIGS. 23 and 24 according to one embodiment.

Figure 26

[0041] A schematic top view of a process kit shown in FIGS. 23 and 24 according to one embodiment.

Figure 27

[0042] A schematic top view of a process kit shown in FIGS. 23 and 24 according to one embodiment.

Figure 28

[0043] A schematic top view of a process kit shown in FIGS. 23 and 24 according to one embodiment.

Figure 29

[0044] A schematic perspective view of the inner surface of a spacer shown in FIG. 26 according to one embodiment.

Figure 30

[0045] A schematic side cross-sectional view of a spacer shown in FIG. 29 according to one embodiment.

Figure 31

[0046] It is a schematic side cross-sectional view of an intermediate plate shown in FIG. 29 according to one embodiment.

Figure 32

[0047] It is a schematic side cross-sectional view of an intermediate plate shown in FIG. 29 according to one embodiment.

Figure 33

[0048] It is a schematic side view of an intermediate plate shown in FIG. 26 according to one embodiment.

Figure 34

[0049] It is a schematic block diagram of a method for processing a substrate according to one embodiment.

Figure 35

[0050] It is a schematic partial side cross-sectional view of a processing chamber having a process kit according to one embodiment.

Figure 36

[0051] It is a schematic perspective view of a process kit shown in FIG. 35 according to one embodiment.

Figure 37

[0052] It is a schematic partial side cross-sectional view of a processing chamber shown in FIG. 35 according to one embodiment.

Figure 38

[0053] It is a schematic partial top view of a plate, a flow module, and a liner shown in FIGS. 35 and 37 according to one embodiment.

Figure 39

[0054] It is a schematic block diagram of a method for processing a substrate according to one embodiment.

Figure 40

[0055] It is a schematic partial side cross-sectional view of a processing chamber according to one embodiment.

Figure 41

[0056] It is a schematic enlarged view of a window shown in FIG. 40 according to one embodiment.

Figure 42

[0057] It is a schematic top view of a flow guide according to one embodiment.

Figure 43

[0058] It is a schematic top view of a flow guide according to one embodiment.

Figure 44

[0059] A schematic bottom perspective view of a flow guide shown in FIG. 42 according to one embodiment.

Figure 45

[0060] A schematic partial side view of a flow guide shown in FIG. 43 according to one embodiment.

Figure 46

[0061] A schematic partial side view of a flow guide shown in FIG. 43 according to one embodiment.

Figure 47

[0062] A schematic top view of a flow guide shown in FIG. 42 according to one embodiment.

Figure 48

[0063] A schematic top view of a flow guide according to one embodiment.

Figure 49

[0064] A schematic partial side view of a flow guide shown in FIG. 42 in a processing chamber in a descending state according to one embodiment.

Figure 50

[0065] A schematic partial side view of a flow guide shown in FIG. 49 in a raised state according to one embodiment.

Figure 51

[0066] A schematic partial side view of a flow guide shown in FIG. 49 in an inclined position according to one embodiment.

Figure 52

[0067] A schematic partial side view of a flow guide shown in FIG. 49 in an inclined position according to one embodiment.

Figure 53

[0068] A schematic block diagram of a method for processing a substrate according to one embodiment.

[0017]

[0069] For ease of understanding, the same reference numbers are used to indicate the same elements common to the drawings where possible. It is assumed that the elements and features of one embodiment can be beneficially incorporated into other embodiments without further description.

DETAILED DESCRIPTION OF THE INVENTION

[0018]

[0070] The present disclosure relates to a process kit and related methods for a processing chamber that facilitates adjustment of a deposition process. One or more process gases flow over a substrate while passing through a rectangular flow opening to form one or more layers on the substrate. In one or more embodiments, the rectangular flow opening is defined between a first flat inner surface of a first flange and a second flat inner surface of a second flange. In one or more embodiments, the flow guide includes one or more openings that are openable and closable to allow one or more cleaning gases to flow into an internal volume at least partially defined by a window.

[0019]

[0071] FIG. 1 is a schematic side cross-sectional view of a processing chamber 100 according to one embodiment. The processing chamber 100 is a deposition chamber. In one embodiment that can be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is utilized to grow an epitaxial film on a substrate 102. The processing chamber 100 generates an intersecting flow of precursors across the entire upper surface 150 of the substrate 102.

[0020]

[0072] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed inside the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), a plurality of upper lamps 141, and a plurality of lower lamps 143. As shown, a controller 120 is in communication with the processing chamber 100 and is used to control the operation of processes and methods, such as the methods described herein.

[0021]

[0073] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 that supports the substrate 102. A plurality of upper lamps 141 are disposed between the upper window and the lid 154. The plurality of upper lamps 141 form a part of the upper lamp module 155. The lid 154 may include a plurality of sensors (not shown) disposed therein for measuring the temperature inside the processing chamber 100. A plurality of lower lamps 143 are disposed between the lower window 110 and the floor 152. The plurality of lower lamps 143 form a part of the lower lamp module 145. The upper window 108 is an upper dome and is formed of an energy transfer material such as quartz. The lower window 110 is a lower dome and is formed of an energy transfer material such as quartz.

[0022]

[0074] The process volume 136 and the purge volume 138 are formed between the upper window 108 and the lower window 110. The process volume 136 and the purge volume 138 are part of the internal volume that is at least partially defined by the upper window 108, the lower window 110, and one or more liners 163.

[0023]

[0075] The internal volume has a substrate support 106 disposed therein. The substrate support 106 includes an upper surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106 inside the processing volume 136.

[0024]

[0076] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are sized to accommodate lift pins 132 for lifting the substrate 102 from the substrate support 106 either before or after the deposition process is performed. The lift pins 132 may be placed on the lift pin stop portions 134 when the substrate support 106 is lowered from the processing position to the transfer position.

[0025]

[0077] The flow module 112 includes a plurality of gas inlets 114, a plurality of purge gas inlets 164, and one or more gas exhaust outlets 116. The plurality of gas inlets 114 and the plurality of purge gas inlets 164 are arranged on the side of the flow module 112 opposite to the one or more gas exhaust outlets 116. One or more flow guides 117a, 117b are arranged below the plurality of gas inlets 114 and the one or more gas exhaust outlets 116. One or more flow guides 117a, 117b are arranged above the purge gas inlet 164. One or more liners 163 are arranged on the inner surface of the flow module 112 to protect the flow module 112 from the reaction gas used during the deposition operation and / or the cleaning operation. Each of the one or more gas inlets 114 and the one or more purge gas inlets 164 is positioned to flow gas parallel to the upper surface 150 of the substrate 102 disposed inside the process volume 136. The one or more gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The one or more purge gas 164 are fluidly connected to one or more purge gas sources 162. The one or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more types of process gas supplied using the one or more process gas sources 151 can include one or more types of reaction gas (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more types of carrier gas (e.g., one or more of nitrogen (N2) and / or hydrogen (H2)). The one or more types of purge gas supplied using the one or more purge gas sources 162 can include one or more types of inert gas (e.g., one or more of argon (Ar), helium (He), and / or nitrogen (N2)). The one or more types of cleaning gas supplied using the one or more cleaning gas sources 153 can include one or more of hydrogen (H) and / or chlorine (Cl).In one embodiment that can be combined with other embodiments, one or more process gases include silicon phosphate (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0026]

[0078] One or more gas exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects one or more gas exhaust outlets 116 and an exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of layers onto the substrate 102. The exhaust system 178 is disposed on the side of the processing chamber 100 opposite the flow module 112.

[0027]

[0079] FIG. 2 is a schematic block diagram of a control system 200 for use inside the processing chamber 100 shown in FIG. 1 according to one embodiment. The controller 120 is configured to receive data or inputs from a plurality of sensors as sensor readings 202. The sensors can include, for example, sensors that monitor the growth of one or more layers on the substrate 102 and / or sensors that monitor the growth of residues on the inner surfaces of the chamber components of the processing chamber 100 (e.g., the inner surfaces of the upper window 108 and one or more liners 163). The controller 120 is equipped with or communicates with a system model 206 of the processing chamber 100. The system model 206 includes a heating model, a rotational position model, and a gas flow model. The system model 206 is a program configured to estimate parameters inside the processing chamber 100 (e.g., gas flow rate, gas pressure, rotational position of one or more components, and heating profile, shape, contour) through deposition operations and / or cleaning operations. The controller 120 is further configured to store readings and calculated values 204.

[0028]

[0080] The read and calculated values 204 include previous sensor readings 202, such as any previous sensor readings within the processing chamber 100. The read and calculated values 204 further include calculated values that were measured by the sensor readings 202 by the controller 120 and stored after being executed through the system model 206. Thus, the controller 120 is configured not only to obtain the stored read and calculated values 204, but also to save the read and calculated values 204 for future use. By maintaining the previous read and calculated values, the controller 120 can adjust the system model 206 over time and reflect a more accurate version of the processing chamber 100.

[0029]

[0081] The controller 120 includes a central processing unit (CPU), a memory containing instructions, and support circuitry for the CPU. The controller 120 controls various items either directly or through other computers and / or controllers. In one or more embodiments, the controller 120 is communicatively coupled to dedicated controllers and the controller 120 functions as a central controller.

[0030]

[0082] The controller 120 is any form of general-purpose computer processor used in an industrial environment to control various substrate processing chambers and equipment, as well as sub-processors thereon or within. The memory, or non-transitory computer-readable medium, is one or more of readily available memories such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, and LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage, local or remote. The support circuitry of the controller 120 is coupled to the CPU (processor) to support the CPU. The support circuitry includes a cache, power supply, clock circuit, input / output circuit, and subsystems, etc. The operating parameters (pressure of the process gas, flow rate of the process gas, and / or rotational position of the process kit) and operations are stored in the memory as software routines that are executed or called to make the controller 120 a controller for specific purposes to control the operations of the various chambers / modules described herein. The controller 120 is configured to execute any of the operations described herein. The instructions stored in the memory, when executed, cause one or more of the operations of method 3400 (described later) to be executed.

[0031]

[0083] The various operations described herein (e.g., the operations of method 3400) can be automatically executed using the controller 120 or manually executed by the controller automatically or by specific operations performed by the user.

[0032]

[0084] In one or more embodiments, the controller 120 includes a mass storage device, an input control unit, and a display unit (not shown). The controller 120 monitors the flow of process gas and purge gas. In one or more embodiments, the controller 120 includes a plurality of controllers 120 such that the stored read and calculated values 204 and the system model 206 are stored inside a controller separate from the controller 120 that operates the processing chamber 100. In one or more embodiments, all of the system model 206 and the stored read and calculated values 204 are stored inside the controller 120.

[0033]

[0085] The controller 120 is configured to control the rotational position, heating, and gas flow through the processing chamber 100 by providing an output to the control unit 208 of the lamp, gas flow, and motion assembly 121. The control unit 208 includes control units for the upper lamp 141, the lower lamp 143, the process gas source 151, the purge gas source 162, the motion assembly 121, and the exhaust pump 157.

[0034]

[0086] The controller 120 is configured to adjust the output to the control unit 208 based on the sensor readings 202, the system model 206, and the stored read and calculated values 204. The controller 120 includes built-in software and compensation algorithms for calibrating the measured values. The controller 120 can include one or more machine learning algorithms and / or artificial intelligence algorithms that estimate parameters optimized for deposition operations and / or cleaning operations. The one or more machine learning algorithms and / or artificial intelligence algorithms can estimate optimized parameters using, for example, a regression model (e.g., a linear regression model) or a clustering technique. The algorithms can be either unsupervised or supervised.

[0035]

[0087] FIG. 3 is a schematic partial cross-sectional view of a processing chamber 300 with a process kit 310 in a processing position, according to one embodiment. The processing chamber 300 is similar to the processing chamber 100 shown in FIG. 1 and includes one or more of its aspects, features, components, characteristics, and / or operations.

[0036]

[0088] The process kit 310 is disposed within a process volume 136 of the internal volume of the processing chamber 300. The process kit 310 includes a flow guide 320. The flow guide 320 includes a spacer plate 321 disposed between a support surface 123 and an upper lamp 141. One flange 331 (described later) of the process kit 310 is shown in FIG. 3. The processing chamber 300 includes a lower liner 311 at least partially aligned below the substrate support 106 and an upper liner 312 at least partially aligned above the substrate support 106. The preheating ring 302 is disposed outwardly of the substrate support 106. The preheating ring 302 is supported on a ledge of the lower liner 311. The stop 304 includes a plurality of arms 305a, 305b, each including a lift pin stop on which the lift pin 132 can rest when the lift pin 132 is lowered.

[0037]

[0089] At the processing position shown in FIG. 3, the process kit 310 is in a lowered position. At the processing position, the spacer plate 321 is supported (e.g., resting) on a ledge 313 of the upper liner 312. At the processing position, the spacer plate 321 effectively seals a lower portion 136a of the process volume 136 from an upper portion 136b of the process volume 136. In one embodiment that can be combined with other embodiments, the flanges 331, 332 (described later) are supported partially on the substrate support 106 and partially on the preheating ring 302 at the processing position. In such an embodiment, when the substrate support 106 is raised, the process kit 310 can be lifted away from the preheating ring 302.

[0038]

[0090] One or more process gases P1 flow over the substrate 102 from the process gas inlet into the lower portion 136a while the lamps 141, 143 heat the preheating ring 302 and the substrate 102, and form (e.g., epitaxially grow) one or more layers on the substrate 102. After flowing over the substrate 102, the one or more process gases P1 flow out of the internal volume through one or more gas exhaust outlets 116.

[0039]

[0091] FIG. 4 is a schematic partial side cross-sectional view of the processing chamber 300 with the process kit 310 (shown in FIG. 3) in the cleaning position, according to one embodiment. In FIG. 4, the cleaning position is a position raised relative to the processing position shown in FIG. 3.

[0040]

[0092] In the cleaning position of FIG. 4, the substrate 102 is removed from the internal volume of the processing chamber 300. By using the raising of the substrate support 106, the process kit 310 is raised such that the spacer 321 rises on both the first side surface 322 and the second side surface 323 and is positioned within the gap away from the ledge 313 of the upper liner 312. In this specification, the gap can also be referred to as an opening. One or more cleaning gases C1 are supplied into the processing volume 136 through the gas inlet 114. At least a portion of the one or more cleaning gases C1 flows into the upper portion 136b through the gap between the spacer 321 and the ledge 313. The one or more cleaning gases C1 flowing into the upper portion 136b facilitate cleaning the inner surface of the processing chamber 300, e.g., the inner surfaces of the upper liner 312 and the upper window 108, and the surface of the spacer 321 facing the upper window 108. The one or more cleaning gases C1 clean the space (e.g., the upper portion 136b) between the spacer 321 and the upper window 108. The one or more cleaning gases C1 flow through the upper portion 136b, through the gap on the opposite side of the processing chamber 300, and out of the internal volume through one or more gas exhaust outlets 116.

[0041]

[0093] FIG. 5 is a schematic partial perspective view of the process kit 310 shown in FIGS. 3 and 4, according to one embodiment.

[0042]

[0094] The spacer plate 321 has, along the first direction D1, a first side surface 322 (adjacent to the gas inlet 114 in FIGS. 3 and 4) and a second side surface 323 opposite to the first side surface 322. Each of the first side surface 322 and the second side surface 323 is arc-shaped.

[0043]

[0095] The process kit 310 includes a first flange 331 that extends outwardly with respect to a third side surface 324 of the spacer plate 321 and also extends outwardly with respect to an outer surface 345 of the spacer plate 321, and a second flange 332 that extends outwardly with respect to a fourth side surface 325 of the spacer plate 321 and also extends outwardly with respect to the outer surface 345 of the spacer plate 321. The fourth side surface 325 is on the opposite side of the third side surface 324 along a second direction D2 that intersects the first direction D1. In one or more embodiments, the second direction D2 is perpendicular to the first direction D1. The third side surface 324 and the fourth side surface 325 are straight lines. In FIGS. 3 and 4, the first and second flanges 331, 332 are at least partially supported on the substrate support 106 such that the raising and lowering of the substrate support 106 raises and lowers the process kit 310. A rectangular flow opening 350 is defined between a first flat inner surface 333 of the first flange 331 and a second flat inner surface 334 of the second flange 332. Each of the first flange 331 and the second flange 332 is semi-circular in shape. In one embodiment that can be combined with other embodiments, the spacer plate 231 is formed of quartz, and the first and second flanges 331, 332 are each formed of silicon carbide (SiC). The rectangular flow opening 350 is in a three-dimensional rectangular box shape such that the rectangular flow opening 350 has a rectangular shape in each of the X - Y plane, X - Z plane, and Y - Z plane. When the process kit 310 is in the processing position, the rectangular flow opening 350 is defined by one or more of the first flat inner surface 333, the second flat inner surface 334, the upper surface of the substrate 102, the upper surface of the substrate support 106, and / or the upper surface of the preheating ring 302.

[0044]

[0096] One or more process gases P1 flow over the substrate 102 through the lower part 136a and through a rectangular flow opening 350. The rectangular flow opening 350 provides a path for the cleaning gas to the upper part 136b, facilitates adjustment of the process gas and the cleaning gas (e.g., pressure and flow rate), and enhances process uniformity and deposition uniformity. As an example, the rectangular flow opening 350 facilitates the use of high pressure and low flow rate for the process gas and the cleaning gas. The rectangular flow opening 350 also facilitates reducing the impact that the rotation of the substrate 102 has on process uniformity and film thickness uniformity during the deposition operation. As an example, the rectangular flow opening reduces or eliminates the influence of gas vortices.

[0045]

[0097] FIG. 6 is a schematic graph 600 plotting the relationship between temperature and x-position according to one embodiment. The temperature represents the temperature of the substrate support 106 taken at various x-positions. The x-position is obtained along the diameter of the substrate support 106.

[0046]

[0098] In the case of the first profile 601, the process kit 310 was not included in the processing chamber. In the case of the second profile 602, the process kit 310 was included in the processing chamber. As shown by the second profile 602, due to process uniformity and mitigation of the influence of substrate rotation, the temperature of the substrate support 106 increases, and the power level of the heating lamp can be lowered. Using a lower power level helps cost reduction and operating efficiency.

[0047]

[0099] FIG. 7 is a schematic partial side cross-sectional view of a processing chamber 700 with the process kit 310 in the processing position according to one embodiment. The processing chamber 700 is similar to the processing chamber 300 shown in FIG. 3 and includes one or more of its aspects, features, components, characteristics, and / or operations.

[0048]

[0100] In FIG. 7, the processing position is the ascending position. The processing chamber 700 includes an upper liner 712. The upper liner 712 is similar to the upper liner 312 shown in FIG. 3 and includes one or more of its aspects, features, components, characteristics, and / or operations.

[0049]

[0101] The ledge 313 is omitted from the upper liner 712 so that the partition plate 321 can descend below the upper liner 712. The partition plate 321 floats freely with respect to the upper liner 712.

[0050]

[0102] FIG. 8 is a schematic partial side cross-sectional view of the processing chamber 700 with the process kit 310 (shown in FIG. 7) in the cleaning position according to an embodiment. In FIG. 8, the cleaning position is a position descended with respect to the processing position shown in FIG. 7.

[0051]

[0103] In the cleaning position of FIG. 4, the substrate 102 is removed from the internal volume of the processing chamber 300. Using the descent of the substrate support 106, the process kit 310 descends so that the partition plate 321 descends away from the upper liner 712 and is positioned within the gap. One or more cleaning gases C1 are supplied into the processing volume 136 through the gas inlet 114. At least a portion of one or more cleaning gases C1 flows into the upper portion 136b through the gap between the partition plate 321 and the upper liner 712.

[0052]

[0104] FIG. 9 is a schematic partial side cross-sectional view of the upper liner 312 according to an embodiment.

[0053]

[0105] FIG. 10 is a schematic top view of the process kit 310 according to an embodiment. The process kit 310 includes a plurality of lock extensions 1001 that extend outwardly with respect to the partition plate 321. The lock extensions 1001 are attached to the partition plate 321 or are formed integrally with the partition plate 321. The lock extensions 1001 extend from the first and second side surfaces 322, 323. The present disclosure contemplates that the lock extensions 1001 can extend from the upper surface of the partition plate 321.

[0054]

[0106] In the embodiment shown in FIG. 9, the upper liner 312 includes two levels of lock stop structures 910a, 910b facing inward. The set of lock stop structures 910a, 910b can be included in each lock extension 1001 (shown in FIG. 10). In one embodiment that can be combined with other embodiments, the upper liner 312 includes four sets of lock stop structures 910a, 910b (shown in FIG. 10). The inner lock stop structure 910b prevents the process kit 310 from rotating by providing stop portions for the flanges 331, 332 when the process kit 310 is in the lowered position.

[0055]

[0107] Two of the outer lock stop structures 910a define a first radial boundary and a second radial boundary, between which each lock extension 1001 can move along the rotation path by a rotation angle A1. The process kit 310 can rotate by an angle up to the rotation angle A1 when the process kit is in the upper position such that the flanges 331, 332 pass through the inner lock stop structure 910b (shown by the dotted line in FIG. 9). The process kit 310 can be rotated when in the raised position, for example, before lowering the process kit 310, such that the spacer plate 321 is supported on a component (e.g., the upper liner 312). The rotation of the process kit 310 can be used to adjust the orientation of the rectangular flow opening 350 during deposition operations and / or cleaning operations, thereby facilitating gas regulation and improving deposition and / or cleaning uniformity.

[0056]

[0108] The inner lock stop structure 910b and the outer lock stop structure 910a can be disposed in respective channels formed in the inner surface of the upper liner 312.

[0057]

[0109] Each of the first flange 331 and the second flange 332 can include respective protruding sections 335, 336 that join to the substrate support 106. In one embodiment that can be combined with other embodiments, the substrate support 106 rises to join the protruding sections 335, 336 and lifts the outer sections 337, 338 of the first and second flanges 331, 332 from the preheating ring 302.

[0058]

[0110] FIG. 11 is a schematic side view of the lock extension 1001 shown in FIG. 10, according to one embodiment.

[0059]

[0111] FIG. 12 is a schematic top view of the spatial configuration of the process kit 310 disposed within the processing chamber 300, according to one embodiment.

[0060]

[0112] The outer diameter OD1 of the spacer 321 is equal to or smaller than the inner diameter ID1 of the upper liner 312. The inner diameter ID2 between the inner edges of the flanges 331, 332 is smaller than the outer diameter OD2 of the substrate support 106. The outer diameter OD3 between the outer edges of the flanges 331, 332 is larger than the inner diameter ID3 of the preheating ring 302.

[0061]

[0113] FIG. 13 is a schematic partial side cross-sectional view of the processing chamber 1300 with the process kit 1310 in the processing position, according to one embodiment.

[0062]

[0114] FIG. 14 is an enlarged cross-sectional view of the processing chamber 1300 shown in FIG. 13. The cross-sectional view of FIG. 14 is taken along a radial angle different from the cross-sectional view shown in FIG. 13.

[0063]

[0115] The processing chamber 1300 is similar to the processing chamber 300 shown in FIG. 3 and includes one or more of its aspects, features, components, characteristics, and / or operations. The process kit 1310 is similar to the process kit 310 shown in FIG. 3 and includes one or more of its aspects, features, components, characteristics, and / or operations.

[0064]

[0116] The process kit 1310 includes a flow guide 1320 and a cover 1350. In FIGS. 13 and 14, the cover 1350 is in the lowered position, effectively sealing the lower portion 136a to the upper portion 136b of the process volume 136. The ledge 313 is omitted from the upper liner 712 so that the partition plate 321 can descend below the upper liner 712. The partition plate 321 floats freely with respect to the upper liner 712. The flanges 1331, 1332 (described later) of the flow guide 1320 are supported on the preheating ring 302. The cover 1350 includes protrusions 1354, 1355 (described later) that extend into the openings 1325, 1326 (described later) of the flow guide 1320.

[0065]

[0117] When the substrate support 106 is lifted, the substrate support 106 engages the protrusions 1354, 1355, raising the cover 1350 relative to the flow guide 1320.

[0066]

[0118] FIG. 15 is a schematic partial side cross-sectional view of the processing chamber 1300 with the process kit 1310 (shown in FIG. 13) in the cleaning position, according to one embodiment.

[0067]

[0119] In FIG. 15, the cleaning position is a position raised relative to the processing position shown in FIG. 13.

[0068]

[0120] FIG. 16 is an enlarged cross-sectional view of the processing chamber 1300 shown in FIG. 15, according to one embodiment. The cross-sectional view of FIG. 16 is taken along a different radial angle than the cross-sectional view shown in FIG. 15.

[0069]

[0121] In FIGS. 15 and 16, the substrate 102 has been removed from the processing chamber 1300, and the cover 1350 has been lifted to the raised position, opening one or more gaps between the cover 1350 and the flow guide 1320. One or more types of cleaning gas C1 flow through the one or more gaps and through one or more first openings 1356 of the cover 1350 into the upper portion 136b of the process volume 136. The cleaning gas C1 flows through one or more second openings 1357 of the cover 1350, through the one or more gaps between the cover 1350 and the flow guide 1320, and is exhausted from the processing chamber 1300.

[0070]

[0122] At the cleaning positions of FIGS. 15 and 16, the substrate 102 has been removed from the internal volume of the processing chamber 300. Using the lowering of the substrate support 106, the process kit 310 has been lowered such that the spacer 321 has been lowered away from the upper liner 712 and is positioned within the gap. One or more types of cleaning gas C1 are supplied into the process volume 136 through the gas inlet 114. At least a portion of the one or more types of cleaning gas C1 flows into the upper portion 136b through the gap between the spacer 321 and the upper liner 712.

[0071]

[0123] FIG. 17 is a schematic top view of the flow guide 1320 and the cover 1350 shown in FIG. 13 according to one embodiment.

[0072]

[0124] FIG. 18 is a schematic bottom view of the flow guide 1320 and the cover 1350 shown in FIG. 13 according to one embodiment.

[0073]

[0125] FIG. 19 is a schematic top view of the flow guide 1320 shown in FIG. 13 according to one embodiment.

[0074]

[0126] FIG. 20 is a schematic perspective view of the bottom of the flow guide 1320 shown in FIG. 13 according to one embodiment.

[0075]

[0127] The flow guide 1320 includes a spacer plate 1321 having a first side surface 1322 and a second side surface 1323 opposite to the first side surface 1322 along a first direction. The first side surface 1322 and the second side surface 1323 are arc-shaped. The flow guide 1320 includes a first flange 1331 that extends outward with respect to a third side surface 1327 of the spacer plate 1321 and extends outward with respect to an outer surface 1345 of the spacer plate 1321, and a second flange 1332 that extends outward with respect to a fourth side surface 1328 of the spacer plate 1321 and extends outward with respect to the outer surface 1345 of the spacer plate 1321. The fourth side surface 1328 is on the opposite side of the third side surface 1327 along a second direction that intersects the first direction. In one or more embodiments, the second direction is perpendicular to the first direction. A rectangular flow opening 1381 is defined between a first flat inner surface 1333 of the first flange 1331 and a second flat inner surface 1334 of the second flange 1332.

[0076]

[0128] The flow guide 1320 includes a first edge section 1335 that extends between the third side surface 1327 of the spacer plate 1321 and the first flange 1331, and a second edge section 1336 that extends between the fourth side surface 1328 of the spacer plate 1321 and the second flange 1332. Each of the first edge section 1335 and the second edge section 1336 is rectangular. The flow guide 1320 includes a first opening 1325 formed between the first flange 1331 and the first edge section 1335, and a second opening 1326 formed between the second flange 1332 and the second edge section 1336.

[0077]

[0129] FIG. 21 is a schematic top view of the cover 1350 shown in FIG. 13 according to one embodiment.

[0078]

[0130] FIG. 22 is a schematic perspective view of the bottom of the cover 1350 shown in FIG. 13 according to one embodiment.

[0079]

[0131] Cover 1350 includes a ring portion 1351 and a first protrusion 1354 extending from the ring portion 1351 configured to extend into the first opening 1325 of the flow guide 1320. Cover 1350 includes a second protrusion 1355 extending from the ring portion 1351 configured to extend into the second opening 1326 of the flow guide 1320.

[0080]

[0132] The first protrusion 1354 and the second protrusion 1355 are slidable within the first opening 1325 and the second opening 1326 of the flow guide 1320, respectively. Each of the first opening 1325, the second opening 1326, the first protrusion 1354, and the second protrusion 1355 is semi-circular in shape.

[0081]

[0133] FIG. 23 is a schematic partial side cross-sectional view of a processing chamber 2300 with a process kit 2310 in a processing position according to one embodiment.

[0082]

[0134] The processing chamber 2300 is similar to the processing chamber 300 shown in FIG. 3 and includes one or more of its aspects, features, components, characteristics, and / or operations. The process kit 2310 is similar to the process kit 310 shown in FIG. 3 and includes one or more of its aspects, features, components, characteristics, and / or operations.

[0083]

[0135] In the embodiment shown in FIG. 23, the flanges 331, 332 are movable upwardly and downwardly relative to the spacer plate 321, and the spacer plate 321 is supported on the ledge 313 of the upper liner 312. In the embodiment shown in FIG. 23, one or more first openings 2351 are formed in the spacer plate 321 adjacent to the first side surface 322, and one or more second openings 2352 are formed in the spacer plate 321 adjacent to the second side surface 323.

[0084]

[0136] The process kit 2310 includes a cover 2320 configured to cover one or more first openings 2351 and one or more second openings 2352 when in the processing position shown in FIG. 23. The cover 2320 includes a ring portion having a width W1 greater than the outer diameter MD1 of each of the one or more first openings 2351 and the one or more second openings 2352.

[0085]

[0137] When the cover 2320 is placed on the spacer plate 321 at the processing position, the openings 2351, 2352 are sealed, and the upper portion 136b of the process volume 136 is sealed from the lower portion 136a.

[0086]

[0138] The cover 2320 is supported on the protruding section 335 of the first flange 331 and the protruding section 336 of the second flange 332. Raising and lowering the substrate support 306 raises and lowers the flanges 331, 332, which in turn raises and lowers the cover 2320 using the joints between the protruding sections 335, 336 and the cover 2320.

[0087]

[0139] FIG. 24 is a schematic partial side cross-sectional view of the processing chamber 2300 with the process kit 2310 (shown in FIG. 23) in the cleaning position, according to one embodiment.

[0088]

[0140] In FIG. 24, the cleaning position is a position raised relative to the processing position shown in FIG. 23.

[0089]

[0141] In FIG. 24, the substrate has been removed from the processing chamber 1300, and the cover 2350 has been lifted to the raised position, opening the openings 2351, 2352 in the spacer plate 321. One or more cleaning gases C1 flow into the upper portion 136b of the process volume 136 through the one or more first openings 2351. The cleaning gas C1 flows through the one or more second openings 2352 and the flow guide 1320 and is exhausted from the processing chamber 2300.

[0090]

[0142] Figure 25 is a schematic top view of the process kit 2310 shown in FIGS. 23 and 24 according to one embodiment. The inner surface (e.g., the bottom surface) of the spacer 321 (facing the substrate support 106 and the substrate 102) can be planar as shown in FIG. 3.

[0091]

[0143] Figure 26 is a schematic top view of the process kit 2310 shown in FIGS. 23 and 24 according to one embodiment. In the embodiment shown in FIG. 26, the inner surface of the spacer 321 includes a plurality of fins 2610 extending along the length L1 of the spacer 321. The length L1 extends between the first side surface 322 and the second side surface 323. In the embodiment shown in FIG. 25, the length L1 corresponds to the diameter of the spacer 321 therebetween. In the embodiment shown in FIG. 26, the first side surface 322 and the second side surface 323 of the spacer 321 are straight (not arcuate) such that the length L1 is the length of a rectangle.

[0092]

[0144] Figure 27 is a schematic top view of the process kit 2310 shown in FIGS. 23 and 24 according to one embodiment. In the embodiment shown in FIG. 27, the inner surface of the spacer 321 includes a plurality of fins 2710. Each of the fins 271 has a length L2 that is smaller than the length L1 of the spacer 321. In the embodiment shown in FIG. 27, the length L2 is about 50% of the length L1.

[0093]

[0145] Figure 28 is a schematic top view of the process kit 2310 shown in FIGS. 23 and 24 according to one embodiment. In the embodiment shown in FIG. 28, the inner surface of the spacer 321 includes a plurality of fins 2810. Each of the fins 271 has a length L2 that is smaller than the length L1 of the spacer 321. In the embodiment shown in FIG. 28, the length L2 is about 30% of the length L1.

[0094]

[0146] Figure 29 is a schematic perspective view of the inner surface of the spacer 321 shown in FIG. 26 according to one embodiment. As shown in FIG. 29, one or more process gases P1 flow through the flow paths between the fins 2610.

[0095]

[0147] FIG. 30 is a schematic side cross-sectional view of the spacer 321 shown in FIG. 29 according to one embodiment. As shown in FIGS. 29 and 30, the fin 2610 has a flat edge 2611.

[0096]

[0148] FIG. 31 is a schematic side cross-sectional view of the spacer 321 shown in FIG. 29 according to one embodiment. As shown in FIG. 31, the fin 3110 has an arcuate edge 3111.

[0097]

[0149] FIG. 32 is a schematic side cross-sectional view of the spacer 321 shown in FIG. 29 according to one embodiment. As shown in FIG. 32, the fin 3210 has a patterned edge 3211 such that a plurality of arcs are included along the length L1 of each fin 3210.

[0098]

[0150] FIG. 33 is a schematic side view of the spacer 321 shown in FIG. 26 according to one embodiment. In the embodiment shown in FIG. 33, the fin 2610 is omitted and the spacer 321 includes a pair of support legs 3310, 3311. The support legs 3310, 3311 can be supported on one or more of the flange 331, 332, the substrate support 106, the upper liner 312, and / or the preheating ring 302.

[0099]

[0151] FIG. 34 is a schematic block diagram of a method 3400 for processing a substrate according to one embodiment.

[0100]

[0152] Step 3402 includes heating a substrate positioned on a substrate support.

[0101]

[0153] Process 3404 includes flowing one or more process gases over a substrate to form one or more layers on the substrate. Flowing one or more process gases over the substrate includes guiding one or more process gases through a rectangular flow opening of a process kit. In one embodiment that can be combined with other embodiments, the one or more process gases are supplied at a pressure in the range of 300 Torr or more, for example, from 300 Torr to 600 Torr. In one embodiment that can be combined with other embodiments, the one or more process gases are supplied at a flow rate of less than 5,000 standard cubic centimeters per minute (SCCM). In one embodiment that can be combined with other embodiments, the substrate is rotated at a rotational speed of less than 8 revolutions per minute (RPM) while flowing one or more process gases over the substrate. In one example that can be combined with other examples, the rotational speed is 1 RPM.

[0102]

[0154] Process 3405 includes exhausting one or more process gases through an exhaust path formed at least partially in a sidewall.

[0103]

[0155] Process 3406 includes moving at least a part of the process kit to open one or more first openings and one or more second openings after exhausting one or more process gases. At least a part of the process kit is moved a distance of less than 20 mm, for example 10 mm. In one or more embodiments, moving includes lifting or lowering at least a part of the process kit. In one embodiment that can be combined with other embodiments, moving at least a part of the process kit includes lifting the cover and sliding one or more protrusions of the cover relative to the spacer of the flow guide while the spacer is supported on the preheating ring. In one embodiment that can be combined with other embodiments, moving at least a part of the process kit includes lifting the cover. The cover includes a ring portion having a width larger than the outer diameter of each of the one or more first openings and the one or more second openings. In one embodiment that can be combined with other embodiments, moving at least a part of the process kit includes lifting or lowering the spacer of the flow guide by moving two flanges connected to the spacer using a substrate support.

[0104]

[0156] Process 3408 includes flowing one or more cleaning gases into the region between the process kit and the window through one or more first openings.

[0105]

[0157] Process 3410 includes flowing one or more cleaning gases into one or more second openings through the region.

[0106]

[0158] Process 3412 includes exhausting one or more cleaning gases through an exhaust path after the one or more cleaning gases have flowed into the one or more second openings.

[0107]

[0159] Process 3414 includes rotating the process kit by a rotation angle greater than 0 degrees and less than 90 degrees. The process kit can be rotated, for example, while the process kit is in the cleaning position used in processes 3408 and 3410. In one embodiment that can be combined with other embodiments, the rotation angle is in the range of 15 degrees to 30 degrees.

[0108]

[0160] Method 3400 can also include flowing one or more purge gases into the processing chamber. The one or more purge gases can flow into the processing chamber before, during, and / or after one or more of processes 3404, 3405, 3408, 3410, and / or 3412. The one or more purge gases can flow into the slit valve of the processing chamber, the lower portion 136a of the processing volume, the upper portion 136b of the processing volume 136, any other optional portion of the processing volume 136, and / or the purge volume 138.

[0109]

[0161] FIG. 35 is a schematic partial side cross-sectional view of a processing chamber 3500 having a process kit 3510 according to one embodiment. The processing chamber 3500 is similar to the processing chamber 300 shown in FIG. 3 and includes one or more of its aspects, features, components, characteristics, and / or operations. FIG. 35 shows the processing chamber 3500 in a processing state.

[0110]

[0162] The process kit 3510 includes a plate 3511 having a first surface 3512 and a second surface 3513 opposite the first surface 3512. The second surface 3513 faces the substrate support 106. The process kit 3510 includes a liner 3520. The liner 3520 includes an annular section 3521 and one or more legs 3522 extending inwardly with respect to the annular section 3521. The one or more legs 3522 are configured to support one or more outer regions of the second surface 3513 of the plate 3511. The liner 3520 includes one or more inlet openings 3523 extending to the inner surface 3524 of the annular section 3521 on the first side surface of the liner 3520, and one or more outlet openings 3525 extending to the inner surface 3524 of the annular section 3521 on the second side surface of the liner 3520.

[0111]

[0163] The one or more inlet openings 3523 extend from the outer surface 3526 to the inner surface 3524 of the annular section 3521 of the liner 3520. The one or more outlet openings 3525 extend from the lower surface 3529 to the inner surface 3524 of the liner 3520. The liner 3520 includes a first extension 3527 and a second extension 3528 disposed outside the lower surface 3529 of the liner 3520. At least a part of the annular section 3521 of the liner 3520 is aligned with the first extension 3527 and the second extension 3528. In the embodiment shown in FIG. 35, the lowermost end of the plate 3511 is aligned above the lowermost end of the liner 3520. In the embodiment shown in FIG. 35, the lowermost end of the plate 3511 is a part of the second surface 3513, and the lowermost end of the liner 3520 is a part of the first extension 3527 and / or the second extension 3528. The present disclosure contemplates that the lowermost end of the liner 3520 may be a part of the lower surface 3529.

[0112]

[0164] The plate 3511 is disk-shaped, and the annular section 3521 is ring-shaped. The plate 3511 can be rectangular. In one or more embodiments, one or more ledges 3522 include a single ring-shaped ledge. In one or more embodiments, one or more ledges 3522 are in the shape of an arcuate segment and include two opposing ledges.

[0113]

[0165] The flow module 112 (which can be at least a part of the side wall of the processing chamber 3500) includes one or more first inlet openings 3514 that are in fluid communication with the lower part 136a of the processing volume 136. The flow module 112 includes one or more second inlet openings 3515 that are in fluid communication with the upper part 136b of the processing volume 136. One or more of the first inlet openings 3514 are in fluid communication with one or more flow gaps between the liner 3520 (the upper liner in FIG. 35) and the lower liner 311. One or more of the second inlet openings 3515 are in fluid communication with one or more inlet openings 3523 of the liner 3520.

[0114]

[0166] In the embodiments shown in FIGS. 35 and 37, one or more of the inlet openings 3523 are oriented in a horizontal orientation, and one or more of the outlet openings 3525 are oriented in an angled orientation. The present disclosure contemplates that one or more of the inlet and / or outlet openings 3523, 3525 can be oriented in a horizontal orientation, can be oriented in an angled orientation, and / or can include one or more bends (such as the bends shown in one or more of the first inlet openings 3514 and one or more of the gas exhaust outlets 116).

[0115]

[0167] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases P1 pass through one or more first inlet openings 3514, through one or more gaps, and flow into the lower portion 136a of the processing volume 136 and flow over the substrate 102. During the deposition operation, one or more purge gases P2 pass through one or more second inlet openings 3515, through one or more inlet openings 3523 of the liner 3520, and flow into the upper portion 136b of the processing volume 136. One or more purge gases P2 flow simultaneously with the flow of one or more process gases P1. The flow of one or more purge gases P2 through the upper portion 136b helps to reduce or prevent the inflow of one or more process gases P1 into the upper portion 136b that could contaminate the upper portion 136b. One or more process gases P1 pass through the gap between the liner 3520 and the lower liner 311 and are exhausted through one or more gas exhaust outlets 116. One or more purge gases P2 pass through one or more outlet openings 3525, through the same gap between the liner 3520 and the lower liner 311 as one or more process gases P1, and are exhausted through one or more gas exhaust outlets 116. The present disclosure contemplates that one or more purge gases P2 may be exhausted separately through one or more second gas exhaust outlets separate from the one or more gas exhaust outlets 116.

[0116]

[0168] The present disclosure also contemplates that one or more purge gases may be supplied to a purge volume 138 (through a plurality of purge gas inlets 164) during a deposition operation and exhausted from the purge volume 138.

[0117]

[0169] FIG. 36 is a schematic perspective view of a process kit 3510 shown in FIG. 35 according to one embodiment.

[0118]

[0170] FIG. 37 is a schematic partial side cross-sectional view of a processing chamber 3500 shown in FIG. 35 according to one embodiment. FIG. 37 shows the processing chamber 3500 in a cleaning state.

[0119]

[0171] During the cleaning operation, one or more cleaning gases C1 flow through one or more first inlet openings 3514 and through one or more gaps (between the liner 3520 and the lower liner 311) into the lower portion 136a of the processing volume 136. During the cleaning operation, one or more cleaning gases C2 flow through one or more second inlet openings 3515 and through one or more inlet openings 3523 of the liner 3520 into the upper portion 136b of the processing volume 136. One or more cleaning gases C2 flow simultaneously with the flow of one or more cleaning gases C1. The present disclosure contemplates that one or more cleaning gases C2 used to clean the surface adjacent to the upper portion 136b may be the same as or different from one or more cleaning gases C1 used to clean the surface adjacent to the lower portion 136a of the processing volume 136.

[0120]

[0172] The processing chamber 3500 helps to separate the gas provided to the lower portion 136a from the gas provided to the upper portion 136b, thereby facilitating adjustment of the parameters. Additionally, one or more purge gases and one or more cleaning gases may be provided separately to the upper portion 136b to help reduce contamination of the window 108 and / or the plate 3511.

[0121]

[0173] As shown in FIGS. 35 and 37, one or more second inlet openings 3515 can be aligned above one or more first inlet openings 3514, and one or more inlet openings 3523 of the liner 3520 can be aligned above one or more gaps between the liner 3520 and the lower liner 311. As shown in FIG. 38, one or more second inlet openings 3515 can be angularly offset from one or more first inlet openings 3514, and one or more inlet openings 3523 of the liner 3520 can be angularly offset from one or more gaps between the liner 3520 and the lower liner 311.

[0122]

[0174] The gas flow in the lower part 136a and the upper part 136b during both the deposition operation and the cleaning operation helps to reduce or eliminate the reverse flow of gas at one or more outlet openings 3525 (e.g., the reverse flow from one or more outlet openings 3525 to the upper part 136b) and the reverse flow of gas at one or more gas exhaust outlets 116 (e.g., the reverse flow from the gap to the lower part 136a).

[0123]

[0175] FIG. 38 is a schematic partial top view of the plate 3511, the flow module 112, and the liner 3520 shown in FIGS. 35 and 37 according to one embodiment. In the embodiment shown in FIG. 38, one or more second inlet openings 3515 are angularly offset from one or more first inlet openings 3514 along the outer periphery of the processing chamber 3500 (e.g., the outer periphery 3801 of the flow module 112).

[0124]

[0176] One or more inlet openings 3523 of the liner 3520 can be angularly offset from one or more gaps between the liner 3520 and the lower liner 311 along the outer periphery of the chamber (e.g., the outer periphery 3802 of the liner 3520).

[0125]

[0177] FIG. 39 is a schematic block diagram of a method 3900 for processing a substrate according to one embodiment.

[0126]

[0178] Step 3901 of method 3900 includes heating a substrate positioned on a substrate support within the chamber.

[0127]

[0179] Process 3903 includes flowing one or more process gases over a substrate to form one or more layers on the substrate. The one or more process gases flow through one or more first inlet openings that are in fluid connection with the lower part of the processing volume. Flowing the one or more process gases over the substrate includes guiding the one or more process gases between a plate and the substrate. The plate is supported on a liner and divides the processing volume into a lower part and an upper part. Process 3903 includes flowing one or more purge gases through the upper part while flowing the one or more process gases over the substrate. The one or more purge gases flow through one or more second inlet openings that are in fluid connection with the upper part of the processing volume.

[0128]

[0180] Process 3905 includes exhausting one or more process gases.

[0129]

[0181] Process 3907 includes flowing one or more cleaning gases through the upper part while the plate is supported on the liner and the upper part is between the plate and the window. Process 3907 includes flowing one or more cleaning gases through the lower part of the processing volume while flowing the one or more cleaning gases through the upper part.

[0130]

[0182] Process 3909 includes exhausting one or more cleaning gases from the upper and lower parts of the processing volume.

[0131]

[0183] FIG. 40 is a schematic partial side cross-sectional view of a processing chamber 4000 according to one embodiment. The processing chamber 4000 is similar to the processing chamber 3500 shown in FIGS. 35 and 37 and includes one or more of its aspects, features, components, characteristics, and / or operations. FIG. 40 shows the processing chamber 4000 in a processing state.

[0132]

[0184] The processing chamber 4000 includes a window 4008 that at least partially defines a processing volume 136. The window 4008 includes a concave or flat first surface 4011 (in the embodiment shown in FIG. 40, the first surface 4011 is flat). The window 4008 includes a convex second surface 4012. The second surface 4012 faces the substrate support 106.

[0133]

[0185] The process kit within the processing chamber 4000 includes a liner 4020. The liner 4020 is similar to the liner 3520 shown in FIGS. 35 and 37 and includes one or more of its aspects, features, components, characteristics, and / or operations.

[0134]

[0186] The window 4008 includes an inner section 4013 and an outer section 4014. The first surface 4011 and the second surface 4012 are at least part of the inner section 4013. The inner section 4013 is transparent and the outer section 4014 is opaque. The outer section 4014 is at least partially received by one or more sidewalls (e.g., the flow module 112) of the processing chamber 4000.

[0135]

[0187] FIG. 41 is a schematic enlarged view of the window 4008 shown in FIG. 40 according to one embodiment. The second surface 4012 of the window 4008 includes one or more portions, and each of the one or more portions has a radius of curvature R1 that is at least 1.5 times greater than the width W1 of the inner section 4013. In one or more embodiments, the radius of curvature R1 is at least 2.0 times greater than the width W1. The second surface 4012 has an arc angle A1 of less than 25 degrees. In one or more embodiments, the arc angle A1 is 20 degrees or less, such as 15 degrees or 20 degrees. In one or more embodiments, the arc angle A1 is 6.0 degrees or less. In one or more examples of such embodiments, the arc angle A1 is in the range of 3.7 degrees to 4.3 degrees, such as 4.0 degrees.

[0136]

[0188] As described herein, the present disclosure helps to reduce or eliminate the possible effects that the shape of the window (e.g., concave, convex, or substantially flat) may have on processing (e.g., epitaxial deposition) operations, processing parameters, and film thickness increase. A substantially flat window (e.g., window 4008 shown in FIGS. 40 and 41) can be used in various process chamber configurations, various process kit configurations, and / or various process configurations.

[0137]

[0189] FIG. 42 is a schematic top view of a flow guide 4200 according to one embodiment. The flow guide 4200 is disposed above a substrate 102. The flow guide 4200 includes a plate 4201 having a first surface and a second surface opposite the first surface. The flow guide 4200 includes a first fin set 4210a extending from the second surface 4201 of the plate and a second fin set 4210b extending from the second surface 4201 of the plate. The second fin set 4210b is positioned spaced apart from the first fin set 4210a and defines a flow path 4230 therebetween. The flow path 4230 has a meandering pattern between the first fin set 4210a and the second fin set 4210b. The flow path 4230 is a single flow path between the first fin set 4210a and the second fin set 4210b. The meandering flow path 4230 includes a plurality of straight paths (e.g., straight sections) and a plurality of arcuate paths (e.g., arcuate bends) alternately arranged with the plurality of straight paths. In one or more embodiments, the meandering flow path 4230 includes a plurality of straight (e.g., rectangular) sections at least partially delimited by straight sections of the two fin sets 4210a, 4210b. In one or more embodiments, the meandering flow path 4230 includes a plurality of arcuate (e.g., semi-circular) sections at least partially delimited by arcuate sections of the two fin sets 4210a, 4210b. For each fin set 4210a, 4210b, the respective fins can be connected together. For example, the respective fins can be integrally formed, fastened together, joined together, welded together, and / or attached to each other in other ways to form the respective fin sets 4210a, 4210b.

[0138]

[0190] Each of the first fin set 4210a and the second fin set 4210b includes a plurality of straight sections 4211a, 4211b that intersect a plurality of arcuate sections 4212a, 4212b. The first fin set 4210a is alternately arranged with the second fin set 4210b such that the plurality of straight sections 4211a of the first fin set 4210a are alternately arranged with the plurality of straight sections 4211b of the second fin set 4210b. For each of the first fin set 4210a and the second fin set 4210b, the plurality of straight sections 4211a, 4211b include a first outer straight section 4213a, 4213b, a second outer straight section 4214a, 4214b, and a plurality of intermediate straight sections 4215a, 4215b arranged between the first outer straight section 4213a, 4213b and the second outer straight section 4214a, 4214b.

[0139]

[0191] For each of the first fin set 4210a and the second fin set 4210b, the plurality of arcuate sections 4212a, 4212b include a first outer arcuate section 4216a, 4216b, a second outer arcuate section 4217a, 4217b, and a plurality of intermediate arcuate sections 4218a, 4218b arranged between the first outer arcuate section 4216a, 4216b and the second outer arcuate section 4217a, 4217b. For each of the first fin set 4210a and the second fin set 4210b, the first outer straight section 4213a, 4213b intersects the ends of the first outer arcuate section 4216a, 4216b, and the second outer straight section 4214a, 4214b intersects the ends of the second outer arcuate section 4217a, 4217b. For each of the first fin set 4210a and the second fin set 4210b, each of the plurality of intermediate straight sections 4215a, 4215b intersects the respective two ends of two of the plurality of arcuate sections 4212a, 4212b.

[0140]

[0192] The first outer straight section 4213a of the first fin set 4210a and the second outer straight section 4214b of the second fin set 4210b have a first length L1. Each of the first outer straight section 4213b of the second fin set 4210b and the second outer straight section 4214a of the first fin set 4210a has lengths L2 and L3 that are longer than the first length L1.

[0141]

[0193] During the deposition operation and / or the cleaning operation, a gas (e.g., one or more process gases P1) flows through the serpentine flow path 4230 between the first fin set 4210a and the second fin set 4210b. The fins and the serpentine flow path 4230 facilitate adjustment of process parameters and help reduce or eliminate interference with performance (e.g., reducing or eliminating the vortex effect when the substrate 102 is rotated during processing). The fins and the serpentine flow path 4230 also help with the efficient use of the gas (e.g., one or more process gases P1). One or more process gases P1 flow into the flow path 4230 between the first outer straight section 4213a and the first outer straight section 4213b. One or more process gases P1 flow into the flow path 4230 between the second outer straight section 4214a and the second outer straight section 4214b.

[0142]

[0194] The flow path 4230 makes it easier to obtain a longer flow path and a relatively small flow path cross-sectional area, thereby enabling the gas flow velocity to be increased for modularization, parameter adjustability, and improvement of uniformity at substantially the same gas partial pressure. The fins of the flow guide 4200 help reduce or eliminate the shadow effect. The flow guide described herein is modular and replaceable.

[0143]

[0195] Figure 43 is a schematic top view of a flow guide 4300 according to an embodiment. The flow guide 4300 is similar to the flow guide 4200 shown in FIG. 42 and includes one or more of its aspects, features, components, characteristics, and / or operations. For each of the first fin set 4310a and the second fin set 4310b, the plurality of arcuate sections 4312a, 4312b have a decreasing radius gradient extending from the first side surface of the plate 4201 to the second side surface of the plate 4201 in the direction D1. For example, the Nth radius RAN of the second outer arcuate section 4317a of the first fin set 4310a is smaller than the first radius RA1 of the first outer arcuate section 4316a of the first fin set 4310a, and the Nth radius RDN of the second outer arcuate section 4317b of the second fin set 4310b is smaller than the first radius RD1 of the first outer arcuate section 4316b. The flow path 4330 has a decreasing width gradient in the direction D1. For example, the Nth width WDN is smaller than the first width WD1 of the flow path 4330. The decreasing gradient helps increase the gas velocity and improve the uniformity of the adjustment of process parameters. The width gradient enhances the uniformity of the adjustment of the gas flow velocity.

[0144]

[0196] The plate 4201 includes a first end 4251 and a second end 4252 opposite the first end 4251. The first outer straight section 4313a of the first fin set 4310a is disposed at a first distance DS1 from the first end 4251 of the plate 4201. The second outer straight section 4314a of the first fin set 4310a is disposed at a second distance DS2 from the second end 4252 of the plate 4201. The second distance DS2 is different from the first distance DS1. In the embodiment shown in FIG. 43, the second distance DS2 is greater than the first distance DS1.

[0145]

[0197] Figure 44 is a schematic bottom perspective view of the flow guide 4200 shown in FIG. 42 according to an embodiment.

[0146]

[0198] FIG. 45 is a schematic partial side view of the flow guide 4300 shown in FIG. 43 according to one embodiment. The first fin set 4310a includes a first outer straight section 4313a, a second outer straight section 4314a, and a plurality of intermediate straight sections 4315a. The second fin set 4310b includes a first outer straight section 4313b, a second outer straight section 4314b, and a plurality of intermediate straight sections 4315b. In the embodiment shown in FIG. 45, the section of the flow path 4330 between each fin is rectangular.

[0147]

[0199] FIG. 46 is a schematic partial side view of the flow guide 4300 shown in FIG. 43 according to one embodiment. In the embodiment shown in FIG. 46, the section of the flow path 4330 between each fin includes a semi-circular portion and a rectangular portion.

[0148]

[0200] In the embodiment shown in FIG. 46, the flow guide 4300 includes a plurality of flow openings 4651 that extend through the plate 4201 into the flow path 4330. The flow openings 4651 facilitate injecting gas from the upper portion 136b of the processing volume 136 into the lower portion 136a of the processing volume 136. In the embodiment shown in FIG. 46, a plurality of second arcuate sections 4655 are disposed between each fin. The second arcuate sections 4655 are joined to the plate 4201. The flow openings 4651 extend through the plate 4201 and the second arcuate sections 4655.

[0149]

[0201] FIG. 47 is a schematic top view of a flow guide 4200 shown in FIG. 42 according to one embodiment. In the embodiment shown in FIG. 47, the flow guide 4200 is shifted laterally (relative to the position shown in FIG. 42) and further offset laterally with respect to the substrate 102 and the substrate support 106. For example, the second outer straight section 4214b is moved and at least partially aligned above the substrate support 106, and the first outer straight section 4213a is moved further away from the substrate 102 and the substrate support 106. The movement of the flow guide 4200 can facilitate adjusting process parameters and deposition thickness. The offset position of the flow guide 4200 enhances operational uniformity (e.g., deposition uniformity), for example when the substrate 102 is rotated during processing.

[0150]

[0202] FIG. 48 is a schematic top view of a flow guide 4800 according to one embodiment. The flow guide 4800 is similar to the flow guide 4200 shown in FIG. 42 and includes one or more of its aspects, features, components, characteristics, and / or operations.

[0151]

[0203] The flow guide 4800 includes a first fin set 4810a including a plurality of first fins 4811a positioned at intervals from each other and defining a first set of flow channels 4812a. The flow guide 4800 includes a plurality of second fins 4811b having a fin set 4810b positioned at intervals from each other and defining a second set of flow channels 4812b. The flow guide 4800 includes a central flow channel 4830 between a first inner fin 4821a of the first fin set 4810a and a second inner fin 4821b of the second fin set 4810b.

[0152]

[0204] Each of the plurality of first fins 4811a, the plurality of second fins 4811b, the first set of flow paths 4812a, and the second set of flow paths 4812b is arcuate. The shape of the central flow path 4830 is convex. The first fin set 4810a includes a first outer fin 4814a disposed outside the plurality of first fins 4811a, and the second fin set 4810b includes a second outer fin 4814b disposed outside the plurality of second fins 4811b. Each of the first outer fin 4814a and the second outer fin 4814b has a length LE2 that is longer than the length LE1 of the plurality of first fins 4811a and the plurality of second fins 4811b.

[0153]

[0205] The flow guide 4800 facilitates achieving a uniform flux across a plurality of regions of the exposed surface of the substrate 102. As an example, the gas velocities of one or more process gases P1 across a first region of the substrate 102 (aligned under the first set of flow paths 4812a), a second region (aligned under the central flow path 4830), and a third region (aligned under the second set of flow paths 4812b) are substantially equal to each other. One or more process gases P1 can be supplied from the same gas source to each of the central flow path 4830, the first set of flow paths 4812a, and the second set of flow paths 4812b. The present disclosure contemplates that one or more process gases P1 can be supplied independently to each of the central flow path 4830, the first set of flow paths 4812a, and the second set of flow paths 4812b.

[0154]

[0206] FIG. 49 is a schematic partial side view of the flow guide 4200 shown in FIG. 42 in a descending state within the processing chamber according to one embodiment.

[0155]

[0207] FIG. 50 is a schematic partial side view of the flow guide 4200 shown in FIG. 49 in a raised state according to one embodiment.

[0156]

[0208] As shown in the descending state of FIG. 49, the distance DA1 between the first set of fins 4210a and the second set of fins 4210b (on one side) and the substrate 102 (on the other side) is smaller than the distance DA1 shown in FIG. 50. One or more of the substrate support 106 and / or the plate 4201 of the flow guide 4200 can be moved to adjust the distance DA1. The distance DA1 can be adjusted during the processing operation and / or during the repetition of the processing operation. In one or more embodiments, the plate 4201 can remain supported on one or more ledges 3522 of the upper liner 3520 during the adjustment of the distance DA1. In one or more embodiments, the plate 4201 can be lifted from one or more ledges 3522 by a certain gap during the adjustment of the distance DA1. In one or more embodiments, the distance DA1 shown in FIG. 49 is in the range of 0.2 mm to 2.0 mm (for example, 1.0 mm), facilitating the sealing state between the fins of the fin sets 4210a, 4210b and the substrate 102 and guiding the gas through the meandering pattern of the flow path 4230. The distance DA1 during the processing (for example, deposition) operation can be changed within the range of 0.2 mm to 5.0 mm (for example, within the range of 1.0 mm to 5.0 mm).

[0157]

[0209] FIG. 51 is a schematic partial side view of the flow guide 4200 shown in FIG. 49 in an inclined position according to one embodiment. The flow guide 4200 is oriented in an inclined position such that the plate 4201 is oriented at an oblique angle with respect to the substrate 102. In the inclined position, the first fin 5101 is disposed at a first vertical position different from the second vertical position of the second fin 5102. In the embodiment shown in FIG. 51, the second ledge 5122 has a height greater than the height of the first ledge 3522. The second ledge 5122 can be angularly offset from one or more other ledges (e.g., the first ledge 3522) such that the plate 4201 of the flow guide 4200 can be raised, rotated, and lowered to the inclined position shown in FIG. 51. For example, the flow guide 4200 can be moved from a horizontal position (e.g., shown in FIG. 49) to an inclined position. The upper surfaces of the first ledge 3522 and / or the second ledge 5122 can be tapered (as shown for the second ledge 5122) to join the inclined plate 4201 in contact with the ledges 3522, 5122. In one or more embodiments, the flow guide 4200 can be moved to the inclined position by raising the substrate support 106 such that the flow guide 4200 is inclined by further raising of the substrate support 106, engaging the first portion of the flow guide 4200 before engaging the second portion.

[0158]

[0210] FIG. 52 is a schematic partial side view of the flow guide 4200 shown in FIG. 49 in an inclined position according to one embodiment. In one or more embodiments, the plate 4201 of the flow guide 4200 is connected to the first flange 331 and the second flange 332. Each of the first flange 331 and the second flange 332 includes a tapered lower surface 5210 such that when the substrate support 106 is raised, it contacts the higher portion (having the first height) of each flange 331, 332 before the shorter portion (having the second height) of each flange 331, 332, and the flow guide 4200 is inclined by further raising of the substrate support 106. FIG. 53 is a schematic block diagram of a method 5300 for processing a substrate according to one embodiment.

[0159]

[0211] Operation 5301 of method 5300 includes heating a substrate positioned on a substrate support.

[0160]

[0212] Operation 5303 includes flowing one or more process gases over the substrate to form one or more layers on the substrate. Flowing one or more process gases over the substrate includes guiding one or more process gases through one or more flow paths at least partially defined by a plurality of fins extending from a flow guide plate.

[0161]

[0213] Operation 5305 includes moving one or more of the substrate support or the plate to adjust the distance between the plurality of fins and the substrate. In one or more embodiments, moving the plate includes raising the plate to lift it relative to the liner and lowering the plate to engage the liner to support the plate on the liner at an inclined position. In one or more embodiments, moving the plate includes raising the substrate support to engage one or more flanges of the flow guide and tilting the plate to an inclined position. One or more flanges include a first portion having a first height and a second portion having a second height less than the first height.

[0162]

[0214] Advantages of the present disclosure include sealing the lower part of the process volume from the upper part of the process volume during a processing operation; modularity of process application; adjusting deposition process parameters at low rotational speeds, high pressures, and low flow rates; having the ability to clean processing chambers (e.g., liners and windows), such as the upper part of the process volume; reducing or eliminating the influence of window shape (e.g., profile) on the processing operation; reducing or eliminating the formation of material on the window; using curved (e.g., convex and / or concave) windows; temperature adjustment and temperature uniformity; deposition uniformity; high throughput and production yield; adjustability of the gas flow path; reducing rotational effects; separately providing gas to the upper part of the process volume; and reducing or eliminating interference of heating (e.g., light from heating lamps).

[0163]

[0215] As an example, a rectangular flow opening for one or more process gases enables a smaller cross-section, thereby facilitating adjustment of the process parameters of the one or more process gases (such as gas pressure, processing temperature, gas composition, and / or gas flow rate). This flow guide also facilitates having a path for the cleaning gas (at least partially bypassing the rectangular flow opening), thereby facilitating cleaning of components (such as one or more surfaces of a window and / or one or more surfaces of an upper liner) within the internal volume. By means of sealing and adjustment, it is made easier to have a substrate support at a low rotational speed (such as less than 8 RPM), one or more process gases at high pressure, and one or more process gases at low flow rate. As another example, by means of sealing and the rectangular flow opening, it is made easier to reduce the influence (such as gas vortices) of the rotation of the substrate support on the one or more process gases. As a further example, the flow guide facilitates adjustment while reducing or eliminating interference with adjustment due to heating of components (such as a substrate and / or a preheating ring). The rectangular flow opening, the seal, and the adjustment function also help reduce or eliminate the possible influence of the shape of the window (such as concave, convex, or substantially flat) on the processing (such as epitaxial deposition) operation, processing parameters, and film thickness increase. Reducing or eliminating the influence separates the shape of the window from the processing efficiency at least partially. Additionally, as an example, the adjustment function facilitates the use of concave or convex windows in addition to substantially flat windows. The present disclosure contemplates that substantially flat windows can be used in the embodiments described herein.

[0164]

[0216] Furthermore, embodiments of the present disclosure (such as the spacer embodiments) are modular and can be used for various processing (such as deposition) operations and / or cleaning operations in general across various operating parameters. Additionally, one or more aspects, features, components, operations, and / or characteristics of the various process kits (such as spacers) described herein can be selected, combined, and / or modified according to the processing parameters (such as flow rate, temperature, pressure, gas components, etc.) used in the processing operation and / or cleaning operation.

[0165]

[0217] The seal also helps to reduce or eliminate the formation of material (e.g., deposition of deposited material during a processing operation) on the window (e.g., the top window).

[0166]

[0218] One or more of the aspects disclosed herein are contemplated to be combinable. By way of example, one or more aspects, features, components, operations, and / or characteristics of processing chamber 100, controller 120, processing chamber 300, processing chamber 700, lock stop structures 910a, 910b, lock extensions 1001, processing chamber 1300, processing chamber 2300, process kit 310, process kit 1310, process kit 2310, fins 2610, 2710, 2810, 3110 and / or 3210, support legs 3310, 3311, method 3400, processing chamber 3500, process kit 3510, method 3900, processing chamber 4000, window 4008, flow guide 4200, flow guide 4300, flow opening 4651, flow guide 4800, and / or method 5300 can be combined. Further, one or more aspects disclosed herein are contemplated to include some or all of the aforementioned benefits.

[0167]

[0219] The foregoing description has been directed to embodiments of the present disclosure, but other and further embodiments of the present disclosure can be devised without departing from the basic scope thereof, and the scope of the present disclosure is determined by the claims.

Claims

1. A process kit for deposition in a processing chamber applicable for use in semiconductor manufacturing, comprising a flow guide, wherein the flow guide is a spacer having a first side surface and a second side surface opposite to the first side surface along a first direction, and the first side surface and the second side surface are arc-shaped, a first flange extending outwardly with respect to a third side surface of the spacer and outwardly with respect to an outer surface of the spacer, a second flange extending outwardly with respect to a fourth side surface of the spacer and outwardly with respect to the outer surface of the spacer, wherein the fourth side surface is on the opposite side of the third side surface along a second direction intersecting the first direction, and a rectangular flow opening defined between a first flat inner surface of the first flange and a second flat inner surface of the second flange The process kit includes.

2. The process kit according to claim 1, wherein each of the first flange and the second flange is semi-circular.

3. The inner surface of the spacer includes one or more fins each having a flat edge, an arc-shaped edge, or a patterned edge, and each of the one or more fins has a length smaller than a diameter extending between the first side surface and the second side surface. The process kit according to claim 1.

4. The flow guide is a first edge section extending between the third side surface of the spacer and the first flange, and a second edge section extending between the fourth side surface of the spacer and the second flange The process kit according to claim 1, further comprising.

5. The process kit according to claim 4, wherein the shape of each of the first edge section and the second edge section is rectangular.

6. The flow guide is a first opening formed between the first flange and the first edge section, and a second opening formed between the second flange and the second edge section The process kit according to claim 5, further comprising.

7. Further comprising a cover, the cover is a ring portion, a first protrusion extending from the ring portion configured to extend into the first opening, and a second protrusion extending from the ring portion configured to extend into the second opening The process kit according to claim 6, including.

8. The first protruding portion and the second protruding portion are each slidable within the first opening and the second opening, and each of the first opening, the second opening, the first protruding portion, and the second protruding portion is semicircular in shape. The process kit according to claim 7.

9. The flow guide is one or more first openings formed in the partition plate adjacent to the first side surface, and one or more second openings formed in the partition plate adjacent to the second side surface The process kit according to claim 1, further comprising

10. The process kit according to claim 9, further comprising a cover configured to cover the one or more first openings and the one or more second openings, the cover including a ring portion having a width greater than the outer diameter of each of the one or more first openings and the one or more second openings.

11. A processing chamber applicable for use in semiconductor manufacturing, a window at least partially defining an internal volume, a plurality of lamps, a substrate support disposed within the internal volume, the substrate support including a support surface, and a process kit including a flow guide disposed within the internal volume, the flow guide being a partition plate having a first side surface and a second side surface disposed between the support surface and the plurality of lamps, the first side surface and the second side surface being arcuate, a first flange extending outwardly with respect to a third side surface of the partition plate and outwardly with respect to an outer surface of the partition plate, a second flange extending outwardly with respect to a fourth side surface of the partition plate and outwardly with respect to the outer surface of the partition plate, and a rectangular flow opening defined between a first flat inner surface of the first flange and a second flat inner surface of the second flange The process kit including A processing chamber comprising

12. The processing chamber according to claim 11, wherein the first flange and the second flange are supported on a preheating ring disposed outside the substrate support.

13. The processing chamber according to claim 11, wherein the partition plate is supported on a liner.

14. A method of processing a substrate, comprising heating a substrate positioned on a substrate support, Flowing one or more process gases over a substrate to form one or more layers on the substrate, wherein flowing the one or more process gases over the substrate includes guiding the one or more process gases through a rectangular flow opening of a process kit, flowing one or more process gases over a substrate, and Moving at least a portion of the process kit to open one or more first openings and one or more second openings; Flowing one or more cleaning gases into a region between the process kit and a window through the one or more first openings; Flowing the one or more cleaning gases into the one or more second openings through the region; A method comprising:

15. The method according to claim 14, wherein moving at least a portion of the process kit includes lifting a cover and sliding one or more protrusions of the cover relative to the spacer of the flow guide while the spacer is supported on a preheating ring.

16. The method according to claim 14, wherein moving at least a portion of the process kit includes lifting a cover, and the cover includes a ring portion having a width greater than an outer diameter of each of the one or more first openings and the one or more second openings.

17. The method according to claim 14, wherein moving at least a portion of the process kit includes lifting or lowering the spacer by moving two flanges connected to the spacer of the flow guide using the substrate support.

18. Rotating the substrate at a rotational speed of less than 8 revolutions per minute (RPM) while flowing the one or more process gases over the substrate; The method according to claim 14, further comprising:

19. Before moving at least a portion of the process kit, exhausting the one or more process gases through an exhaust path formed at least partially in a side wall; After flowing the one or more cleaning gases into the one or more second openings, exhausting the one or more cleaning gases through the exhaust path; The method according to claim 14, further comprising:

20. Rotating the process kit by a rotation angle greater than 0 degrees and less than 90 degrees The method according to claim 14, further comprising.

21. A flow guide applicable for use in semiconductor manufacturing, A plate having a first surface and a second surface opposite to the first surface, A first fin set extending from the second surface, and A second fin set extending from the second surface, spaced apart from the first fin set, defining a flow path between the first fin set and the second fin set, the flow path having a meandering pattern between the first fin set and the second fin set, the second fin set A flow guide comprising.

22. The flow guide according to claim 21, wherein each of the first fin set and the second fin set includes a plurality of straight sections intersecting a plurality of arc-shaped sections.

23. The flow guide according to claim 22, wherein the first fin set is alternately arranged with the second fin set such that the plurality of straight sections of the first fin set are alternately arranged with the plurality of straight sections of the second fin set.

24. The flow guide according to claim 22, further comprising a plurality of flow openings extending through the plate to the flow path.

25. For each of the first fin set and the second fin set, The plurality of arc-shaped sections have a decreasing radius gradient in a direction extending from a first side surface of the plate to a second side surface of the plate. The flow guide according to claim 22.

26. For each of the first fin set and the second fin set, The plurality of straight sections include a first outer straight section, a second outer straight section, and a plurality of intermediate straight sections disposed between the first outer straight section and the second outer straight section. The plurality of arc-shaped sections include a first outer arc-shaped section, a second outer arc-shaped section, and a plurality of intermediate arc-shaped sections disposed between the first outer arc-shaped section and the second outer arc-shaped section. The flow guide according to claim 22.

27. The plate includes a first end and a second end opposite to the first end. The first outer straight section of the first fin set is disposed at a first distance from the first end of the plate, The second outer straight section of the first fin set is disposed at a second distance from the second end of the plate, and the second distance is greater than the first distance. The flow guide according to claim 26.

28. For each of the first fin set and the second fin set, The first outer straight section intersects an end of the first outer arcuate section, The second outer straight section intersects an end of the second outer arcuate section. The flow guide according to claim 26.

29. For each of the first fin set and the second fin set, Each of the plurality of intermediate straight sections intersects two respective ends of two of the plurality of arcuate sections. The flow guide according to claim 28.

30. The first outer straight section of the first fin set and the second outer straight section of the second fin set have a first length, and each of the first outer straight section of the second fin set and the second outer straight section of the first fin set has a length greater than the first length. The flow guide according to claim 26.

31. A flow guide applicable for use in semiconductor manufacturing, A plate having a first surface and a second surface opposite to the first surface, A first fin set extending from the second surface, the first fin set having a plurality of first fins spaced apart from each other and defining a first set of flow paths. A second fin set extending from the second surface, the second fin set having a plurality of second fins spaced apart from each other and defining a second set of flow paths. A central flow path between a first inner fin of the first fin set and a second inner fin of the second fin set A flow guide comprising.

32. The flow guide according to claim 31, wherein each of the first plurality of fins and the second plurality of fins is arcuate.

33. The first fin set includes a first outer fin disposed outside the plurality of first fins, The second fin set includes second outer fins disposed outside the plurality of second fins, and each of the first outer fins and the second outer fins has a length greater than the lengths of the plurality of first fins and the plurality of second fins. The flow guide according to claim 32.

34. A method of processing a substrate, comprising: heating a substrate positioned on a substrate support; flowing one or more process gases over the substrate to form one or more layers on the substrate, wherein flowing the one or more process gases over the substrate includes guiding the one or more process gases through one or more flow paths at least partially defined by a plurality of fins extending from a plate of a flow guide; moving one or more of the substrate support or the plate to adjust a distance between the plurality of fins and the substrate; A method comprising:

35. The method according to claim 34, wherein the plate is moved to an inclined position in which the first fins are disposed at a first vertical position different from a second vertical position of the second fins.

36. Moving the plate comprises: raising the plate to lift the plate relative to a liner; lowering the plate to engage the liner and support the plate on the liner at the inclined position. The method according to claim 35, comprising:

37. Moving the plate comprises: raising the substrate support to engage one or more flanges of the flow guide and inclining the plate to the inclined position. The method according to claim 35, comprising:

38. The one or more flanges include: a first portion having a first height; a second portion having a second height less than the first height. The method according to claim 37, comprising:

39. The method according to claim 34, wherein the plate is moved to adjust the distance to less than 0.2 mm.

40. The method according to claim 39, wherein the plurality of fins includes a first fin set and a second fin set spaced apart from the first fin set to define a single flow path between the first fin set and the second fin set, and the single flow path has a meandering pattern between the first fin set and the second fin set.

41. A process kit for deposition in a processing chamber applicable for use in semiconductor manufacturing, a plate having a first surface and a second surface opposite the first surface, and a liner, an annular section, one or more ledges extending inwardly with respect to the annular section and configured to support one or more outer regions of the second surface of the plate, one or more inlet openings extending to an inner surface of the annular section on a first side surface of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side surface of the liner including a liner comprising a process kit.

42. The process kit according to claim 41, wherein the one or more inlet openings extend from an outer surface of the annular section of the liner to the inner surface, and the one or more outlet openings extend from a lower surface of the liner to the inner surface.

43. The process kit according to claim 41, wherein a lowermost end of the plate is aligned above a lowermost end of the liner.

44. The process kit according to claim 42, wherein the liner further includes a first extension and a second extension disposed outside the lower surface of the liner.

45. The process kit according to claim 44, wherein at least a portion of the annular section of the liner is aligned with the first extension and the second extension.

46. A processing chamber applicable for use in semiconductor manufacturing, an internal volume, a plurality of lamps, a substrate support disposed within the internal volume and including a support surface, a window at least partially defining the internal volume, a concave or flat first surface, and a convex second surface opposite the substrate support including a window comprising a processing chamber.

47. The processing chamber according to claim 46, wherein the window includes an inner section and an outer section, and the first surface and the second surface are at least part of the inner section.

48. The processing chamber according to claim 47, wherein the inner section is transparent and the outer section is opaque.

49. The processing chamber according to claim 47, wherein the second surface includes one or more portions, and each of the one or more portions has a radius of curvature that is at least 1.5 times greater than the width of the inner section.

50. The processing chamber according to claim 49, wherein the radius of curvature is at least 2.0 times greater than the width.

51. The processing chamber according to claim 47, wherein the second surface has an arc angle of less than 40 degrees.

52. Further comprising a process kit disposed within the internal volume, the process kit comprising a plate having a first surface and a second surface opposite the first surface, the second surface of the plate facing the first surface of the window; and a liner, an annular section, one or more legs extending inwardly with respect to the annular section, the one or more legs supporting one or more outer regions of the second surface of the plate a liner including The processing chamber according to claim 46.

53. The liner is one or more inlet openings extending to the inner surface from the outer surface of the annular section of the liner, and one or more outlet openings extending to the inner surface from the lower surface of the annular section of the liner The processing chamber according to claim 52, further comprising.

54. The processing chamber according to claim 53, wherein the one or more inlet openings extend from the outer surface to the inner surface of the annular section of the liner, and the one or more outlet openings extend from the lower surface to the inner surface of the liner.

55. A method of processing a substrate, comprising: heating a substrate positioned on a substrate support within a processing volume of a chamber; Flowing one or more process gases over the substrate to form one or more layers on the substrate, including guiding the one or more process gases between a plate and the substrate, the plate being supported on a liner and dividing the processing volume into a lower part and an upper part, flowing one or more process gases over the substrate, exhausting the one or more process gases, while the plate is supported on the liner, flowing one or more cleaning gases through the upper part, the upper part being between the plate and the window, flowing one or more cleaning gases through the upper part, exhausting the one or more cleaning gases comprising a method.

56. The method according to claim 55, further comprising flowing one or more purge gases through the upper part simultaneously with flowing the one or more process gases over the substrate.

57. The method according to claim 56, further comprising flowing one or more cleaning gases through the lower part of the processing volume.

58. The method according to claim 57, wherein the one or more process gases flow through one or more first inlet openings that are in fluid connection with the lower part of the processing volume.

59. The method according to claim 58, wherein the one or more purge gases flow through one or more second inlet openings that are in fluid connection with the upper part of the processing volume.

60. The method according to claim 59, wherein the one or more second inlet openings are angularly offset from the one or more first inlet openings along the outer periphery of the chamber.

Images