Substrate Temperature Control Using an Integrated Thermoelectric Cooling System

Abstract

A temperature control system for a substrate support within a processing chamber includes a manifold assembly configured to supply a liquid coolant at a first temperature from a first channel of a coolant assembly to the processing chamber, supply a liquid coolant at a second temperature from a second channel of the coolant assembly to the processing chamber, and supply a return coolant from the processing chamber to the coolant assembly. A thermoelectric module disposed in a flow path between the manifold assembly and the coolant assembly is configured to receive the return coolant from the manifold assembly, heat or cool the return coolant, and supply the heated return coolant and the cooled return coolant to the coolant assembly.

Description

Cross - reference to related applications

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 349,694, filed on June 7, 2022. The entire disclosure of the application referenced above is incorporated herein by reference.

Technical Field

[0002] This disclosure relates to temperature control of a substrate support in a substrate processing system.

Background Art

[0003] The background description provided here is for the purpose of presenting the content of the present disclosure schematically. Within the scope described in this background art section, research by the inventors named at the present time, as well as aspects of the description that cannot be regarded separately as prior art at the time of filing, are not recognized as prior art against the present disclosure, whether explicitly or implicitly.

[0004] A substrate processing system can be used to process substrates such as semiconductor wafers. Exemplary processes that can be implemented on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, dielectric etching, and / or other etching, deposition, or cleaning processes. The substrate can be placed on a substrate support such as a pedestal or an electrostatic chuck (ESC) within the processing chamber of the substrate processing system. During etching, an etching gas mixture containing one or more gases is introduced into the processing chamber, and plasma can be used to initiate a chemical reaction.

Summary of the Invention

[0005] The temperature control system for a substrate support within a processing chamber includes a manifold assembly configured to supply a liquid coolant at a first temperature from a first channel of a coolant assembly to the processing chamber, supply a liquid coolant at a second temperature from a second channel of the coolant assembly to the processing chamber, and supply a return coolant from the processing chamber to the coolant assembly. A thermoelectric module disposed in a flow path between the manifold assembly and the coolant assembly receives the return coolant from the manifold assembly, heats or cools the return coolant, and is configured to supply the heated return coolant and the cooled return coolant to the coolant assembly. The thermoelectric module may be a single-stage or multi-stage thermoelectric cooler.

[0006] In another aspect, the thermoelectric module includes a first conductive plate coupled to a first side of the thermoelectric module, the first conductive plate including a first coolant channel in fluid communication with the manifold assembly and the coolant assembly and configured to supply the return coolant from the manifold assembly to the coolant assembly, and a second conductive plate coupled to a second side of the thermoelectric module, the second conductive plate including a second coolant channel in fluid communication with the manifold assembly and the coolant assembly and configured to supply the return coolant from the manifold assembly to the coolant assembly. The coolant assembly includes a low-temperature coolant reservoir and a high-temperature coolant reservoir. The manifold assembly supplies a liquid coolant at a first temperature from the low-temperature coolant reservoir and a liquid coolant at a second temperature from the high-temperature coolant reservoir.

[0007] In other features, the first coolant channel supplies the return coolant from the manifold assembly to the low-temperature coolant reservoir, and the second coolant channel supplies the return coolant from the manifold assembly to the high-temperature coolant reservoir. The manifold assembly includes a first valve assembly configured to supply the liquid coolant from the low-temperature coolant reservoir to the processing chamber, a second valve assembly configured to supply the liquid coolant from the high-temperature coolant reservoir to the processing chamber, and a third valve assembly configured to supply the return coolant from the processing chamber to the thermoelectric module. The third valve assembly is configured to selectively supply the return coolant to either the first conductive plate or the second conductive plate. At least one of the first valve assembly, the second valve assembly, and the third valve assembly includes a three-way valve.

[0008] In other features, the temperature control system further includes a temperature controller configured to control the manifold assembly to selectively control the supply of the return coolant to the thermoelectric module and to control the voltage supplied to the thermoelectric module to cool and heat the return coolant supplied to the coolant assembly. The thermoelectric module is located under the manifold assembly. The thermoelectric module is located laterally adjacent to the manifold assembly.

[0009] In other features, the substrate processing system includes the temperature control system and further includes a coolant assembly. The coolant assembly is located under the floor of the fabrication chamber, and the thermoelectric module is disposed above the floor. The coolant assembly and the thermoelectric module are located under the floor of the fabrication chamber.

[0010] The temperature control system for the processing chamber is a thermoelectric module disposed in the flow path between the processing chamber and the coolant assembly. The thermoelectric module receives the return coolant from the processing chamber, heats or cools the return coolant, and is configured to supply the heated return coolant and the cooled return coolant to the coolant assembly. The temperature controller is configured to selectively control the supply of the return coolant to the thermoelectric module and to control the voltage supplied to the thermoelectric module to cool and heat the return coolant supplied to the coolant assembly.

[0011] In another feature, the thermoelectric module includes a first conductive plate coupled to a first side of the thermoelectric module, the first conductive plate including a first coolant channel for supplying the return coolant to the coolant assembly, and a second conductive plate coupled to a second side of the thermoelectric module, the second conductive plate including a second coolant channel for supplying the return coolant to the coolant assembly. The thermoelectric module supplies the return coolant from the first conductive plate to the low-temperature coolant reservoir of the coolant assembly and supplies the return coolant from the second conductive plate to the high-temperature coolant reservoir of the coolant assembly.

[0012] In another feature, the temperature control system further includes a return valve assembly configured to supply the return coolant from the processing chamber to either the first conductive plate or the second conductive plate of the thermoelectric module. The return valve assembly includes a three-way valve. The temperature controller is configured to control the return valve assembly to selectively supply the return coolant to the first conductive plate or the second conductive plate of the thermoelectric module. The temperature controller is configured to control the supply of voltage to the thermoelectric module to selectively cool and heat the return coolant within the first conductive plate and the second conductive plate, respectively.

[0013] Other fields to which the present disclosure is applicable will become apparent from the detailed description, the claims, and the drawings. The detailed description and the specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure.

Brief Description of the Drawings

[0014] The present disclosure will be more fully understood from the detailed description and the accompanying drawings.

[0015]

Figure 1

[0016]

Figure 2A

[0017]

Figure 2B

[0018]

Figure 2C

[0019]

Figure 3

[0020]

Figure 4

[0021] In these drawings, reference numerals may be reused to refer to similar and / or identical elements.

Best Mode for Carrying Out the Invention

[0022] A cooling system can be configured to cool a substrate support, such as an electrostatic chuck (ESC), with a coolant fluid. For example, a coolant fluid, such as a high-pressure cooling gas or various liquid coolants, flows through coolant channels in the base plate of the substrate support. Due to mechanical limitations, the cooling capacity and temperature range may be restricted.

[0023] For example, a dual temperature control system can include a plurality of valves (e.g., three-way supply valves) that mix a hot coolant and a cold coolant supplied from a coolant assembly to a substrate support, and a return valve that controls the flow of the coolant returning to the coolant assembly. The coolant assembly supplies both a hot coolant and a cold coolant from respective reservoirs (e.g., a hot coolant reservoir and a cold coolant reservoir). The coolant (return coolant) flowing back from the substrate support via the return valve is mixed with either the hot coolant or the cold coolant and then supplied to the respective reservoirs. In other words, since the same return coolant is supplied to both reservoirs, the return coolant is heated before being supplied to the hot coolant reservoir and cooled before being supplied to the cold coolant reservoir.

[0024] Typically, there is a large temperature difference between the temperature of the return coolant (before being heated or cooled) and the temperature of the coolant in each reservoir. Therefore, the coolant assembly requires a significant amount of heating and cooling capacity to provide the desired range of temperature control (e.g., -60°C to 80°C) of the substrate support and an appropriate balance of the return coolant temperature. However, due to constraints such as power requirements, cost, installation area, and cooling technology, the temperature control range of the coolant assembly is restricted.

[0025] The dual temperature control system according to the present disclosure includes a thermoelectric module configured to heat and cool the return coolant and supply the heated / cooled return coolant to respective reservoirs within the coolant assembly. For example, the thermoelectric module is a single-stage or multi-stage thermoelectric cooler (TEC). Since the thermoelectric module adjusts the temperature of the return coolant, the return coolant does not need to be mixed with the high-temperature coolant or the low-temperature coolant before being supplied to the coolant assembly. Thus, the load on the coolant assembly is reduced.

[0026] Referring now to FIG. 1, an exemplary substrate processing system 100 is shown. As one example, the substrate processing system 100 can be used to perform substrate processing that requires temperature control (e.g., cryogenic etching using RF plasma). The substrate processing system 100 includes a processing chamber 102 that surrounds other components of the substrate processing system 100 and houses RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate support 106 such as an ESC. During operation, a substrate 108 is placed on the substrate support 106. Although a particular substrate processing system 100 and processing chamber 102 are shown as an example, the principles of the present disclosure are applicable to other types of substrate processing systems and processing chambers, such as those that generate plasma in-situ or perform remote plasma generation and delivery (e.g., using plasma tubes, microwave tubes).

[0027] As one example, the upper electrode 104 can include a gas distribution device such as a showerhead 110 that introduces and distributes process gas. The showerhead 110 may include a stem portion that includes one end connected to the upper surface of the processing chamber 102. The base portion is generally cylindrical and extends radially outward from the opposite end of the stem portion at a location spaced from the upper surface of the processing chamber. The substrate-facing surface or faceplate of the base portion of the showerhead 110 includes a plurality of holes through which process gas or purge gas flows. Alternatively, the upper electrode 104 may include a conductive plate, and the process gas may be introduced in another manner.

[0028] The substrate support 106 includes a conductive base plate 112 that acts as a lower electrode. The base plate 112 supports a ceramic layer 114. A bonding layer (e.g., an adhesive layer and / or a thermal bonding layer) 116 may be disposed between the ceramic layer 114 and the base plate 112. The base plate 112 may include one or more coolant channels 118 for flowing a coolant through the base plate 112. The substrate support 106 can include an edge ring 120 disposed to surround the outer periphery of the substrate 108.

[0029] An RF generation system 122 generates an RF voltage and outputs it to one of the upper electrode 104 and the lower electrode (e.g., the base plate 112 of the substrate support 106). The other of the upper electrode 104 and the base plate 112 may be DC grounded, AC grounded, or floating. In this example, the RF voltage is supplied to the lower electrode. By way of example only, the RF generation system 122 may include an RF voltage generator 124 that generates an RF voltage, and this RF voltage is supplied to the upper electrode 104 or the base plate 112 by a matching and distribution network 126. In other examples, the plasma may be generated inductively or remotely. As shown for illustrative purposes, the RF generation system 122 corresponds to a capacitively coupled plasma (CCP) system, but the principles of the present disclosure can also be implemented in other suitable systems such as, by way of example only, a transformer coupled plasma (TCP) system, a CCP cathode system, a remote microwave plasma generation and delivery system, and the like.

[0030] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, …, and 132-N (collectively referred to as gas source 132), where N is an integer greater than 0. The gas sources supply one or more etching gases and their mixtures. The gas sources can also supply a carrier gas and / or a purge gas. The gas sources 132 are connected to the manifold 140 by valves 134-1, 134-2, …, and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, …, and 136-N (collectively referred to as mass flow controllers 136). The output of the manifold 140 is supplied to the processing chamber 102. As just one example, the output of the manifold 140 is supplied to the showerhead 110.

[0031] The temperature controller 142 communicates with the coolant assembly 146 and can control the flow of coolant through the channel 118. The coolant assembly 146 according to the present disclosure is configured as a dual-channel cooler (e.g., including a coolant pump and respective reservoirs) that supplies coolant to the coolant channel 118 via a manifold and valves, as will be described in more detail below. The temperature controller 142 operates the coolant assembly 146 to selectively flow coolant through the channel 118 to cool the substrate support 106. A thermoelectric module (not shown in FIG. 1) is configured to heat and cool the return coolant flowing from the substrate support 106 to the coolant assembly 146.

[0032] The valves 150 and the pump 152 can be used to exhaust the reactants from the processing chamber 102. The system controller 160 can be used to control the components of the substrate processing system 100. The robot 170 can be used to feed a substrate onto the substrate support 106 or remove a substrate from the substrate support 106. For example, the robot 170 can transfer the substrate between the substrate support 106 and the load lock 172. Although shown as separate controllers, the temperature controller 142 may be implemented within the system controller 160.

[0033] Referring now to FIGS. 2A - 2C, a temperature control system (e.g., a dual temperature control system) 200 includes a manifold assembly 204 disposed between a coolant assembly 208 and a processing chamber 212 (e.g., a processing station or module). The temperature control system 200 and the manifold assembly 204 supply a liquid coolant to coolant channels 216 in a substrate support (e.g., a pedestal base plate, an ESC, etc.) 220. For example, the processing chamber 212 is configured to perform a process on a substrate disposed on the substrate support 220. The temperature control system 200 according to the present disclosure includes a thermoelectric assembly 224, which will be described in more detail below.

[0034] As shown, the thermoelectric assembly 224 is disposed between the manifold assembly 204 and the coolant assembly 208 on the floor 226 of the fabrication chamber. In other examples, the thermoelectric assembly 224 can be disposed within the manifold assembly 204, or within an enclosure having the manifold assembly 204, below the floor 226, within the coolant assembly 208, etc. For example, as shown in FIG. 2B, the thermoelectric assembly 224 is disposed below the floor 226. As shown in FIG. 2C, the thermoelectric assembly 224 is disposed adjacent to (i.e., laterally adjacent to) the manifold assembly 204.

[0035] The coolant assembly 208, the manifold assembly 204, and the thermoelectric assembly 224 are configured to provide accurate cooling (e.g., in the range of -60°C or less to 80°C) of the substrate support 220 while minimizing the temperature difference between the return coolant and the coolant within the coolant assembly 208. For example, the coolant assembly 208 is configured as a dual-channel cooler that includes a pump 228 and one or more coolant reservoirs 232 that store liquid at different temperatures. The first coolant reservoir (e.g., the low-temperature coolant reservoir) of the coolant reservoirs 232 can store a liquid coolant maintained in a first temperature range (e.g., -60°C or less to 20°C), and the second coolant reservoir (e.g., the high-temperature coolant reservoir) of the coolant reservoirs 232 stores a liquid coolant maintained in a second temperature range (e.g., 20°C to 80°C). Accordingly, the coolant assembly 208 provides coolant to the manifold assembly 204 via both a low-temperature side (e.g., a low-temperature or low-side channel 234 that includes a low-temperature supply pipe and a low-temperature return pipe) and a high-temperature side (e.g., a high-temperature or high-side channel 236 that includes a high-temperature supply pipe and a high-temperature return pipe).

[0036] The manifold assembly 204 includes a cryogenic supply valve or valve assembly 240 (e.g., the illustrated three-way valve, or a combination of valves) that is in fluid communication with the cryogenic channel supply tube 242 and the inlet 244 of the coolant channel 216. Conversely, the manifold assembly 204 includes a high-temperature supply valve or valve assembly 248 (e.g., the illustrated three-way valve, or a combination of valves) that is in fluid communication with the high-temperature channel supply tube 250 and the inlet 244 of the coolant channel 216. A return valve or valve assembly 254 (e.g., the illustrated three-way valve, or a combination of valves) is disposed between and in fluid communication with the cryogenic channel return tube 256, the high-temperature channel return tube 258, and the outlet 260 of the coolant channel 216. The cryogenic supply valve 240 and the high-temperature supply valve 248 are also in fluid communication with the cryogenic channel return tube 256 and the high-temperature channel return tube 258, respectively. Although shown as three-way valves, any of the valves 240, 248, and 254 can be replaced with other valve arrangements. For example, each three-way valve can be replaced with a plurality of valves arranged to supply liquid coolant between the substrate supports 220.

[0037] In this way, the coolant assembly 208 provides cryogenic liquid coolant through the cryogenic supply valve 240, and the cryogenic liquid coolant (i.e., the cryogenic return coolant) returns to the coolant assembly 208 through the return valve 254 and the thermoelectric assembly 224. The thermoelectric assembly 224 is configured to cool the cryogenic return coolant and supply the cooled cryogenic return coolant to the coolant assembly 208. Further, the cryogenic supply valve 240 is configured to selectively allow the liquid coolant to flow from the coolant assembly 208 into the cryogenic supply valve 240 and return to the coolant assembly 208 in order to maintain temperature and pressure consistency when the cryogenic liquid coolant is not being supplied to the coolant channel 216.

[0038] Similarly, coolant assembly 208 provides high-temperature liquid coolant through high-temperature supply valve 248, and the high-temperature liquid coolant (i.e., high-temperature return coolant) returns to coolant assembly 208 through return valve 254 and thermoelectric assembly 224. Thermoelectric assembly 224 is configured to heat the high-temperature return coolant and supply the high-temperature return coolant to coolant assembly 208. Further, high-temperature supply valve 248 is configured to selectively allow liquid coolant to flow from coolant assembly 208 into high-temperature supply valve 248 and return to coolant assembly 208 when high-temperature liquid coolant is not being supplied to coolant channel 216.

[0039] Temperature controller 264 controls coolant assembly 208 and manifold assembly 204 to supply liquid coolant to substrate support 220 and maintain substrate support 220 at a desired temperature. For example, temperature controller 264 selectively supplies liquid coolant through low-temperature channel 234 and / or high-temperature channel 236, blends liquid coolant from low-temperature channel 234 and high-temperature channel 236, etc., by controlling valves 240 and 248 to maintain a desired temperature. Temperature controller 264 further controls return valve 254 to supply return coolant to coolant assembly 208. Temperature controller 264 controls thermoelectric assembly 224 to selectively heat or cool the return coolant supplied to coolant assembly 208, as will be described in more detail below.

[0040] In some examples, the manifold assembly 204 may be actively purged during processing (e.g., using a purge gas such as compressed dry air, nitrogen molecules, etc.) to prevent and / or remove condensate within the manifold assembly 204. For example, a purge assembly 268 (e.g., a purge gas source, a purge valve, etc.) that is in fluid communication with the interior of the manifold assembly 204 is configured to selectively flow a purge gas to purge the condensate. The purge assembly 268 can respond to a temperature controller 264, a system controller 160, etc. The purge gas and the condensate are discharged out of the manifold assembly via a purge vent or outlet 272 that is in communication with the atmosphere.

[0041] FIG. 3 shows an example of a thermoelectric assembly 224 in more detail. The thermoelectric assembly 224 includes a thermoelectric module 300 (e.g., a thermoelectric cooler, or TEC). For example, the thermoelectric module 300 is a solid planar TEC configuration function based on the Peltier effect. Although shown as a single-stage TEC, the thermoelectric module 300 may be implemented as a multi-stage TEC. First and second voltages V1 and V2 (e.g., a positive DC voltage and a negative DC voltage) are applied to respective conductive electrodes or pads 304 (e.g., copper pads). Current flows from one side to the other side of the thermoelectric module 300 through a series of thermoelectric semiconductor elements 308 disposed between substrates 312 and 316 (e.g., ceramic substrates). The semiconductor elements 308 can be composed of thermoelectric materials including, but not limited to, bismuth telluride (Bi2Te3), lead telluride (PbTe), silicon germanium (SiGe), and bismuth-antimony (Bi-Sb).

[0042] The adjacent pair of semiconductor elements 308 includes an N-type semiconductor element and a P-type semiconductor element. When current flows through the semiconductor elements (i.e., alternately between the N-type semiconductor element and the P-type semiconductor element), one of the substrates 312 and 316 is heated and the other is cooled. More specifically, heat flows from the low-temperature side substrate (e.g., substrate 312) to the high-temperature side substrate (e.g., substrate 316) or vice versa based on the direction of the current flowing through the semiconductor elements 308. When the polarity of the current is reversed, the direction of heat flow is reversed.

[0043] The thermoelectric module 300 is coupled to respective conductive (e.g., aluminum) plates 320 and 324 (e.g., a low-temperature side plate 320 and a high-temperature side plate 324). For example, the conductive plates 320 and 324 are coupled to the substrates 312 and 316, respectively, using a thermally conductive low-elasticity adhesive such as a silicone adhesive. The plates 320 and 324 include respective coolant channels 328 and 332. For example, the coolant channels 328 and 332 are in fluid communication with the return valve 254 to receive the return coolant from the outlet 260. The coolant channel 328 of the low-temperature side plate 320 is in fluid communication with the low-temperature channel return pipe 256 and supplies the return coolant to the low-temperature channel return pipe 256. Conversely, the coolant channel 332 of the high-temperature side plate 324 is in fluid communication with the high-temperature channel return pipe 258 and supplies the return coolant to the high-temperature channel return pipe 258.

[0044] In this way, before the thermoelectric module 300 supplies the coolant to the coolant assembly 208 (i.e., to the low-temperature coolant reservoir), it cools the return coolant flowing from the outlet 260 through the check valve 254. For example, the return coolant flowing through the coolant channel 328 releases heat to the low-temperature side plate 320, thereby cooling the return coolant flowing through the coolant channel 328 and supplied to the low-temperature channel return pipe 256. Conversely, before the thermoelectric module 300 supplies the coolant to the coolant assembly 208 (i.e., to the high-temperature coolant reservoir), it heats the return coolant flowing from the outlet 260 through the check valve 254. The return coolant flowing through the coolant channel 332 absorbs heat from the high-temperature side plate 324, thereby heating the return coolant flowing through the coolant channel 332 and supplied to the high-temperature channel return pipe 258.

[0045] Accordingly, the heating and cooling power used by the coolant assembly 208 is reduced, and the heating / cooling efficiency is increased. Further, the cooling capacity at a low operating temperature is increased, the coefficient of performance is increased, and the installation area of the cooling assembly 208 can be reduced.

[0046] The temperature controller 264 controls the thermoelectric module 300 and selectively heats or cools the return coolant supplied to the coolant assembly 208. For example, the temperature controller 264 implements PID or other closed-loop control to determine the amount of heat transfer required to obtain the desired (e.g., setpoint) temperature adjustment of the substrate support 220. The temperature controller 264 selectively adjusts the voltage supplied to the thermoelectric module 300 (e.g., using DC or pulse width modulation) to increase or decrease the amount of heat transferred to or from the return coolant.

[0047] For example, while supplying a high-temperature liquid coolant to heat the substrate support 220, the temperature controller 264 controls the return valve 254 to supply the return coolant to the coolant assembly 208 through the high-temperature side plate 324 of the thermoelectric module 300, and accordingly controls the voltages V1 and V2. Conversely, while supplying a low-temperature liquid coolant to cool the substrate support 220, the temperature controller 264 controls the return valve 254 to supply the return coolant to the coolant assembly 208 through the low-temperature side plate 320 of the thermoelectric module 300, while controlling the voltages V1 and V2.

[0048] Figure 4 shows the steps of an exemplary method 400 for controlling the temperature of a substrate support according to the present disclosure. At 404, the process starts. For example, an etching, deposition, or another processing step is performed on a substrate disposed on the substrate support. At 408, the method 400 (e.g., the temperature controller 264) determines whether the temperature of the substrate support is within a desired range. For example, the temperature controller 264 can receive a signal from a temperature sensor or another signal indicating the temperature of the substrate support and determine whether the temperature is within the desired range (e.g., above a lower threshold and below an upper threshold). If true, the method 400 proceeds to 412. If false, the method 400 proceeds to 416. At 412, the method 400 determines whether the processing step is complete. If true, the method 400 ends. If false, the method 400 continues the processing while monitoring the temperature at 408.

[0049] At 416, the method 400 (e.g., the temperature controller 264) increases or decreases the temperature of the substrate support to the desired range. For example, the temperature controller 264 controls the components of the temperature control system 200 to increase or decrease the temperature of the substrate support while monitoring the temperature and continuously comparing the temperature with the desired range.

[0050] For example, when the temperature exceeds the desired range, the temperature controller 264 controls the supply valve 240 to supply the low-temperature liquid coolant to the substrate support 220, while controlling the return valve 254 to supply the return coolant to the coolant assembly through the low-temperature side plate 320 of the thermoelectric module 300. Conversely, when the temperature is below the desired range, the temperature controller 264 controls the supply valve 248 to supply the high-temperature liquid coolant to the substrate support 220, while controlling the return valve 254 to supply the return coolant to the coolant assembly through the high-temperature side plate 324 of the thermoelectric module 300.

[0051] At 420, the method 400 (e.g., the temperature controller 264) determines whether the temperature is within the desired range. If true, the method 400 continues to 404. If false, the method 400 proceeds to 416 and continues to adjust the temperature control system 200 until the temperature is within the desired range (e.g., by increasing or decreasing the flow rate of the low-temperature liquid coolant or the high-temperature liquid coolant as needed).

[0052] The foregoing description is merely exemplary in nature and is in no way intended to limit the present disclosure, its application, or its use. The broad teachings of the present disclosure can be implemented in a variety of forms. Accordingly, while the present disclosure includes specific examples, upon review of the drawings, the specification, and the following claims, other variations will become apparent, and the true scope of the present disclosure should not be limited to such examples. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without changing the principles of the present disclosure. Further, although each embodiment has been described above as having specific features, any one or more of these features described with respect to any embodiment of the present disclosure can be implemented in, and / or combined with, any other embodiment (even if such combinations are not explicitly described). In other words, the described embodiments are not mutually exclusive, and swapping one or more embodiments with each other is within the scope of the present disclosure.

[0053] The spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using various terms such as "connected", "engaged", "coupled", "adjacent", "next to", "on", "above", "below", and "disposed". Also, when a relationship between a first element and a second element is described in the above disclosure, unless explicitly stated to be "direct", the relationship may be a direct relationship with no other intervening elements between the first element and the second element, but there is also a possibility of an indirect relationship with one or more intervening elements (spatially or functionally) between the first element and the second element. As used herein, the expression "at least one of A, B, and C" should be interpreted in the sense of a logic (A or B or C) using non-exclusive logical OR, and should not be interpreted in the sense of "at least one of A, at least one of B, and at least one of C".

[0054] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such a system can comprise semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling system operation before, during, and after processing of a semiconductor wafer or substrate. Such electronics may sometimes be referred to as a “controller” and may control various components or sub-parts of one or more systems. The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or the type of system. Such processes include feeding of process gases, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid feeding setting, position and motion setting, loading and unloading of wafers to and from tools connected or interfaced with a particular system and other transfer tools, and / or loading and unloading of wafers to and from a load lock.

[0055] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receives commands, issues commands, controls operations, enables cleaning operations, enables endpoint measurements, etc. The integrated circuits may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application-specific integrated circuit (ASIC), and / or one or more microprocessors, i.e., a microcontroller that executes program instructions (e.g., software). The program instructions are commands communicated to the controller in the form of various individual settings (or program files) that may define the operating parameters for executing a particular process on or for a semiconductor wafer or for a system. The operating parameters may, in some embodiments, be part of a recipe defined by a process engineer to implement one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0056] In some embodiments, the controller may be part of a computer that is integrated or coupled with the system or otherwise network-connected to the system, or may be coupled to such a computer, or a combination thereof. For example, the controller may be within the "cloud" or may be all or part of a fab host computer system. This enables remote access to wafer processing. The computer enables remote access to the system, monitors the current progress of the fabrication operation, reviews the history of past fabrication operations, examines trends or performance criteria from multiple fabrication operations, changes the parameters of the current process, sets the processing steps following the current process, or may initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system over a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, and such parameters and / or settings are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data specifies parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is configured to interact with or control. Thus, as described above, the controller may be distributed, for example, by comprising one or more individual controllers that are network-connected to each other and cooperate towards a common purpose (such as the processes and controls described herein). Examples of distributed controllers for such purposes include one or more integrated circuits on a chamber that are remotely located (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits combined to control the process in the chamber.

[0057] Exemplary systems can include, but are not limited to, a plasma etching chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacture of semiconductor wafers.

[0058] As described above, depending on one or more process steps performed by a tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, proximate tools, tools located throughout the factory, a main computer, another controller, or a tool used for material transport to load and unload a wafer container to and from a tool location and / or load port within a semiconductor manufacturing facility.

Claims

1. A temperature control system for a substrate support in a processing chamber, comprising: a manifold assembly configured to (i) supply a liquid coolant at a first temperature from a first channel of a coolant assembly to the processing chamber, (ii) supply the liquid coolant at a second temperature from a second channel of the coolant assembly to the processing chamber, and (iii) supply a return coolant from the processing chamber to the coolant assembly; a thermoelectric module disposed in a flow path between the manifold assembly and the coolant assembly, the thermoelectric module being configured to (i) receive the return coolant from the manifold assembly, (ii) heat or cool the return coolant, and (iii) supply the heated return coolant and the cooled return coolant to the coolant assembly; A temperature control system comprising the above components.

2. The temperature control system according to claim 1, wherein the thermoelectric module comprises a first conductive plate coupled to a first side of the thermoelectric module, the first conductive plate being in fluid communication with the manifold assembly and the coolant assembly and including a first coolant channel for supplying the return coolant from the manifold assembly to the coolant assembly; a second conductive plate coupled to a second side of the thermoelectric module, the second conductive plate being in fluid communication with the manifold assembly and the coolant assembly and including a second coolant channel for supplying the return coolant from the manifold assembly to the coolant assembly. A temperature control system comprising the above components.

3. The temperature control system according to claim 2, wherein the coolant assembly includes a low-temperature coolant reservoir and a high-temperature coolant reservoir; the manifold assembly supplies the liquid coolant at the first temperature from the low-temperature coolant reservoir and supplies the liquid coolant at the second temperature from the high-temperature coolant reservoir. A temperature control system comprising the above components.

4. The temperature control system according to claim 3, wherein the first coolant channel supplies the return coolant from the manifold assembly to the low-temperature coolant reservoir, and the second coolant channel supplies the return coolant from the manifold assembly to the high-temperature coolant reservoir.

5. The temperature control system according to claim 4, wherein the manifold assembly a first valve assembly configured to supply the liquid coolant from the low-temperature coolant reservoir to the processing chamber; a second valve assembly configured to supply the liquid coolant from the high-temperature coolant reservoir to the processing chamber; a third valve assembly configured to supply the return coolant from the processing chamber to the thermoelectric module A temperature control system comprising:

6. The temperature control system according to claim 5, wherein the third valve assembly is configured to selectively supply the return coolant to either the first conductive plate or the second conductive plate.

7. The temperature control system according to claim 6, wherein at least one of the first valve assembly, the second valve assembly, and the third valve assembly includes a three-way valve.

8. The temperature control system according to claim 1, wherein (i) controlling the manifold assembly to selectively control the supply of the return coolant to the thermoelectric module; and (ii) further comprising a temperature controller configured to control the voltage supplied to the thermoelectric module to cool and heat the return coolant supplied to the coolant assembly.

9. The temperature control system according to claim 1, wherein the thermoelectric module is located under the manifold assembly.

10. The temperature control system according to claim 1, wherein the thermoelectric module is located laterally adjacent to the manifold assembly.

11. A substrate processing system comprising the temperature control system according to claim 1 and further comprising the coolant assembly.

12. The substrate processing system according to claim 11, wherein the coolant assembly is located under the floor of the fabrication chamber, and the thermoelectric module is disposed above the floor.

13. The substrate processing system according to claim 9, wherein the coolant assembly and the thermoelectric module are located under the floor of the fabrication chamber.

14. A temperature control system for a processing chamber, A thermoelectric module disposed in a flow path between the processing chamber and the coolant assembly, the thermoelectric module configured to (i) receive the return coolant from the processing chamber, (ii) heat or cool the return coolant, and (iii) supply the heated return coolant and the cooled return coolant to the coolant assembly. A temperature controller configured to (i) selectively control the supply of the return coolant to the thermoelectric module and (ii) control the voltage supplied to the thermoelectric module to cool and heat the return coolant supplied to the coolant assembly. A temperature control system comprising the above.

15. The temperature control system according to claim 14, wherein the thermoelectric module is a first conductive plate coupled to a first side of the thermoelectric module, the first conductive plate including a first coolant channel for supplying the return coolant to the coolant assembly; and a second conductive plate coupled to a second side of the thermoelectric module, the second conductive plate including a second coolant channel for supplying the return coolant to the coolant assembly. A temperature control system comprising the above.

16. The temperature control system according to claim 15, wherein the thermoelectric module supplies the return coolant from the first conductive plate to a low-temperature coolant reservoir of the coolant assembly and supplies the return coolant from the second conductive plate to a high-temperature coolant reservoir of the coolant assembly.

17. The temperature control system according to claim 15, further comprising a return valve assembly configured to supply the return coolant from the processing chamber to either the first conductive plate or the second conductive plate of the thermoelectric module.

18. The temperature control system according to claim 17, wherein the return valve assembly comprises a three-way valve.

19. The temperature control system according to claim 17, wherein the temperature controller is configured to control the return valve assembly to selectively supply the return coolant to the first conductive plate or the second conductive plate of the thermoelectric module.

20. The temperature control system according to claim 19, The temperature controller controls the supply of voltage to the thermoelectric module and is configured to selectively cool and heat the return coolant in the first conductive plate and the second conductive plate, respectively, a temperature control system.

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