Semiconductor process equipment and its mounting device

Abstract

This application discloses a semiconductor process equipment belonging to semiconductor process technology and a mounting device therefor. The mounting device for the semiconductor process equipment includes a first surface and a second surface. The first surface is used for mounting a wafer. The height of the second surface is lower than that of the first surface. The second surface includes a base peripherally provided on the first surface, an upper surface on which an annular groove is formed, and a lower surface covering the second surface, and includes a deposition ring and a cover ring. The outer ring portion of the cover ring is supported on the lining of the reaction chamber of the semiconductor process equipment. The inner ring portion of the cover ring is provided to cover the outer ring portion of the deposition ring. A plurality of annular protrusions and a plurality of annular recesses are provided on two opposing surfaces of the inner ring portion of the cover ring and the outer ring portion of the deposition ring, thereby forming a labyrinth passage between the connection location between the cover ring and the deposition ring and the annular groove. The mounting device of this application can effectively reduce the probability of adhesion occurring between the cover ring and the deposition ring during the semiconductor process treatment process.

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor processes, and particularly relates to semiconductor process equipment and its mounting device.

Background Art

[0002] Currently, in the semiconductor manufacturing process, the technology using aluminum and aluminum alloys as interconnect lines is widely used in the metallization process of chip manufacturing. The general manufacturing process is the magnetron sputtering method. A typical magnetron sputtering device has a reaction chamber 10 as shown in FIG. 1. Above the reaction chamber 10, a semiconductor process assembly 20 for performing magnetron sputtering is provided. Below the reaction chamber 10, a mounting device for placing the wafer 40 is provided. The mounting device mainly includes a base 31, a deposition ring 32, and a cover ring 33. The bottom surface of the deposition ring 32 is flat and is directly placed on the base 31. On the upper surface, grooves are formed for depositing reactants generated during the magnetron sputtering process, thereby preventing the surface of the base 31 from being contaminated by the reactants. In the prior art, since the connection location between the cover ring 33 and the deposition ring 32 is close to the above grooves, after the magnetron sputtering process continues for a certain period, as the reactants deposited in the grooves continue to increase, a sticking phenomenon occurs at the connection location between the cover ring 33 and the deposition ring 32. As a result, when the cover ring 33 rises, the deposition ring 32 also rises in conjunction, and the deposition ring 32 falls off. Also, since the inner diameter of the deposition ring 32 is generally smaller than that of the wafer 40, the deposition ring 32 that rises in conjunction simultaneously raises the wafer 40, causing wafer transfer failure and wafer breakage phenomena.

Summary of the Invention

Problems to be Solved by the Invention

[0003] The embodiments of the present application aim to provide a semiconductor process device and its mounting device that improve the problem that in the process of the conventional mounting device, sticking phenomena are likely to occur during the magnetron sputtering process, leading to problems such as the detachment of the deposition ring, the failure of wafer transfer, and wafer breakage phenomena.

Means for Solving the Problems

[0004] In a first aspect, the embodiments of the present application include a deposition ring including a first surface and a second surface. The first surface is used for placing a wafer. The height of the second surface is lower than that of the first surface. The second surface includes a base peripherally provided on the first surface, an upper surface on which an annular groove is formed, and a lower surface covering the second surface, and a cover ring. The outer ring portion of the cover ring is supported on the lining of the reaction chamber of the semiconductor process device. The inner ring portion of the cover ring is provided to cover the outer ring portion of the deposition ring. A plurality of annular protrusions and a plurality of annular recesses are provided on two opposing surfaces of the inner ring portion of the cover ring and the outer ring portion of the deposition ring, so as to provide a mounting device for a semiconductor process device that forms a labyrinth passage between the connection location of the cover ring and the deposition ring and the annular groove.

[0005] In some embodiments of the present application, the heights of the plurality of annular protrusions are different, the depths of the plurality of annular recesses are different. The plurality of annular protrusions are all provided on the upper surface of the outer ring portion of the deposition ring, and the plurality of annular recesses are all provided on the lower surface of the inner ring portion of the cover ring, or the plurality of annular protrusions are all provided on the lower surface of the inner ring portion of the cover ring, and the plurality of annular recesses are all provided on the upper surface of the outer ring portion of the deposition ring, or a part of the plurality of annular protrusions and the plurality of annular recesses are provided on the upper surface of the outer ring portion of the deposition ring, and the rest are provided on the lower surface of the inner ring portion of the cover ring.

[0006] In some embodiments of the present application, the inner ring portion of the cover ring has an eaves structure, and the eaves structure shields a part of the annular groove.

[0007] In some embodiments of the present application, the base includes a first cylinder and a second cylinder. The first cylinder and the second cylinder are coaxially connected and provided. The first cylinder is located above the second cylinder, and the bottom surface radius of the first cylinder is smaller than the bottom surface radius of the second cylinder, so that the first surface and the second surface are respectively formed on the upper side of the base. The inner ring portion of the deposition ring and the outer side wall of the first cylinder are positioned by a one-to-one correspondence and engagement of a plurality of first positioning bosses and a plurality of first positioning grooves.

[0008] In some embodiments of the present application, the inner ring portion of the cover ring and the outer ring portion of the deposition ring are positioned by a one-to-one correspondence and engagement of a plurality of second positioning bosses and a plurality of second positioning grooves.

[0009] Optionally, in some embodiments of the present application, a plurality of buckle grooves are further provided on the outer ring portion of the deposition ring. The placement device further includes a plurality of buckles. The outer ring portion of the deposition ring and the base are tightly connected by a one-to-one correspondence and engagement of a plurality of the buckles and a plurality of the buckle grooves.

[0010] In some embodiments of the present application, the buckle includes a buckle rod. At one end of the buckle rod, a first hook for hooking the corresponding buckle groove is provided. At the other end of the buckle rod, a second hook for hooking the bottom surface of the base is provided.

[0011] In some embodiments of the present application, the buckle groove is a T-shaped groove, and the first hook is a T-shaped hook adapted to the T-shaped groove.

[0012] In some embodiments of the present application, it further includes a fixing ring that is peripherally provided on the outer side wall of the base and locks a plurality of the buckles to the outer side wall of the base.

[0013] In some embodiments of the present application, a third hook for hooking the fixing ring is further provided at the other end of the buckle rod.

[0014] In the second aspect, the embodiment of the present application includes the above-mentioned placement device, a reaction chamber having a sealed space, and a semiconductor process processing assembly, and the placement device and the semiconductor process processing assembly provide semiconductor process equipment built in the sealed space.

Effects of the Invention

[0015] In the present application, the placement device includes a base, a deposition ring, and a cover ring. The inner ring portion of the cover ring is provided to cover the outer ring portion of the deposition ring, and a plurality of annular protrusions and a plurality of annular recesses are provided between the inner ring portion of the cover ring and the outer ring portion of the deposition ring, thereby forming a labyrinth passage between the cover ring and the deposition ring. In this way, since a labyrinth passage is formed between the connection portion between the cover ring and the deposition ring and the annular groove, the distance for the reactants deposited in the annular groove to reach the connection portion is significantly increased during the semiconductor process processing, and the reactants need to cross multiple labyrinth barriers to reach the connection portion, greatly increasing the difficulty for the reactants to reach the connection portion. Therefore, the placement device of the present application can effectively reduce the probability of adhesion between the cover ring and the deposition ring during the semiconductor process processing.

Brief Description of the Drawings

[0016] Hereinafter, by referring to the drawings and describing the specific embodiments of the present application in detail, the technical solution of the present application and its beneficial effects will become clear.

[0017]

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Embodiments for Carrying out the Invention

[0018] Hereinafter, with reference to the drawings, the technical solutions of the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative labor belong to the protection scope of the present application. The following embodiments and their technical features can be combined with each other as long as they do not conflict.

[0019] At present, in the semiconductor manufacturing process, the technology of using aluminum and aluminum alloys as interconnecting lines is widely used in the chip manufacturing metallization process. A common manufacturing process is the magnetron sputtering method. As shown in FIG. 1, a typical magnetron sputtering device has a reaction chamber 10. Above the reaction chamber 10, a semiconductor process assembly 20 for performing magnetron sputtering is provided. Below the reaction chamber 10, a placement device for placing the wafer 40 is provided. The placement device mainly includes a base 31, a deposition ring 32, and a cover ring 33. The bottom surface of the deposition ring 32 is flat and is directly arranged on the base 31. On the upper surface, grooves are formed for depositing reactants generated during the magnetron sputtering process, thereby preventing the surface of the base 31 from being contaminated by the reactants. In the prior art, since the connection location between the cover ring 33 and the deposition ring 32 is close to the above-mentioned grooves, when the magnetron sputtering process continues for a certain period, as the reactants deposited in the grooves continue to increase, a sticking phenomenon occurs at the connection location between the cover ring 33 and the deposition ring 32. As a result, when the cover ring 33 is lifted, the deposition ring 32 also rises in conjunction, and the deposition ring 32 falls off. In addition, since the inner diameter of the deposition ring 32 is generally smaller than that of the wafer 40, the deposition ring 32 that rises in conjunction simultaneously raises the wafer 40, causing failures in wafer transfer and wafer breakage phenomena.

[0020] In view of the above situation, in order to improve the problem that the conventional placement device is prone to sticking phenomena during the magnetron sputtering process, which causes problems such as the deposition ring falling off, wafer transfer failure, and wafer breakage, it is necessary to provide a solution means for the new placement device.

[0021] As shown in FIGS. 2 to 4, in one embodiment, the embodiment of the present application provides a semiconductor process device, which includes a reaction chamber 100 having a sealed space, a placement device 200, and a semiconductor process treatment assembly 300. The placement device 200 and the semiconductor process treatment assembly 300 are respectively built in the sealed space. Specifically, the placement device 200 may include a base 210, a deposition ring 220, and a cover ring 230. Specifically, the base 210 may include a first surface 2111 and a second surface 2121. The first surface 2111 is used to place the wafer 400. The height of the second surface 2121 is lower than that of the first surface 2111, and the second surface 2121 is peripherally provided on the first surface 2111. Specifically, the deposition ring 220 may include an upper surface on which an annular groove 221 is formed and a lower surface covering the second surface 2121, and is used to prevent the second surface 2121 from being contaminated by reactants during the semiconductor process treatment of the wafer 400. Specifically, the cover ring 230 is used to shield the gap between the base 210 and the lining 110 of the reaction chamber 100 of the semiconductor process device, thereby avoiding the reactants from contaminating the lower region of the reaction chamber 100. The outer ring portion of the cover ring 230 is supported on the lining 110 of the reaction chamber 100 of the semiconductor process device. The inner ring portion of the cover ring 230 is provided to cover the outer ring portion of the deposition ring 220. A plurality of annular protrusions and a plurality of annular recesses are provided between the inner ring portion of the cover ring 230 and the outer ring portion of the deposition ring 220, so as to form a labyrinth passage between the connection location of the cover ring 230 and the deposition ring 220 and the annular groove 221.

[0022] Note that the semiconductor process equipment may specifically be a magnetron sputtering device. At this time, the semiconductor process processing assembly 300 is a magnetron sputtering assembly. The magnetron sputtering assembly may specifically include a magnetron system 310, a target material 320, and an upper electrode system (not shown). The target material 320 is located above the placement device 200, and a sealed chamber is defined above the reaction chamber 100. The sealed chamber can be filled with deionized water. When performing a magnetron sputtering process on the wafer 400 on the placement device 200, the DC power supply of the upper electrode system applies a bias to the target material 320 to make it a negative bias with respect to the grounded chamber. Thereby, a process gas such as argon gas discharges to generate plasma, and the negative bias can simultaneously attract positively charged argon ions to the target material 320. The energy of the argon ions is high enough. When the impact is applied to the target material 320 by the action of the magnetic field of the magnetron system 310, metal atoms escape from the surface of the target material 320 and are deposited on the wafer 400 by diffusion, and further complete the magnetron sputtering process treatment of the wafer 400. For those skilled in the art, the semiconductor process equipment may also be equipment for performing other semiconductor process treatments on the wafer 400. At this time, the semiconductor process processing assembly 300 may be replaced with an assembly capable of performing the corresponding semiconductor process treatment.

[0023] As shown in FIGS. 2 and 3, in this embodiment, a plurality of annular protrusions and a plurality of annular recesses are provided between the inner ring portion of the covering 230 and the outer ring portion of the deposition ring 220, so that the purpose of forming a labyrinth passage between the connection location of the covering 230 and the deposition ring 220 and the annular groove 221 is mainly to increase the difficulty for the reactants deposited in the annular groove to reach the connection location and reduce the probability of the sticking phenomenon occurring at the connection location. Therefore, the number of the plurality of annular protrusions and the number of the plurality of annular recesses can be provided as many as possible according to the actual installation environment. The heights of the plurality of annular protrusions are different, and the depths of the plurality of annular recesses are also different. By leaving a certain gap between the highest point of the annular protrusion and the lowest point of the corresponding annular recess, the above-mentioned labyrinth passage can be formed better. The plurality of annular protrusions can all be provided on the upper surface of the outer ring portion of the deposition ring 220, or all be provided on the lower surface of the inner ring portion of the covering 230, or some can be provided on the upper surface of the outer ring portion of the deposition ring 220 and the rest can be provided on the lower surface of the inner ring portion of the covering 230 according to the actual requirements. Similarly, the plurality of annular recesses can also all be provided on the upper surface of the outer ring portion of the deposition ring 220, or all be provided on the lower surface of the inner ring portion of the covering 230, or some can be provided on the upper surface of the outer ring portion of the deposition ring 220 and the rest can be provided on the lower surface of the inner ring portion of the covering 230 according to the actual requirements.

[0024] In order to better prevent the reactants deposited in the annular groove 221 from reaching the connection point between the covering 230 and the deposition ring 220 through the labyrinth passage, the entrance of the labyrinth passage may specifically be located on the upper side of the outer wall of the annular groove 221, and the horizontal height of the entrance of the labyrinth passage is higher than the horizontal height of the connection point between the covering 230 and the deposition ring 220. Preferably, the inner ring portion of the covering may have an eaves structure, and the eaves structure shields a part of the annular groove. Taking FIG. 3 as an example, the plurality of annular protrusions may specifically include a first annular protrusion 222 and a second annular protrusion 223 respectively provided on the upper surface of the outer ring portion of the deposition ring 220, and the plurality of annular recesses include a first annular recess 224 provided on the upper surface of the outer ring portion of the deposition ring 220, a second annular recess 231, a third annular recess 232 and a third annular recess 233 respectively provided on the lower surface of the inner ring portion of the covering 230. The first annular protrusion 222 may specifically be formed on the outer wall of the annular groove 221, that is, provided integrally with the outer wall of the annular groove 221, and forms a first-stage labyrinth barrier for the reactants deposited in the annular groove 221 during the semiconductor process treatment. The bottom wall (i.e., the lowest point) of the second annular recess 231 corresponding to the upper side (i.e., the highest point) of the first annular protrusion 222 is separated by a first predetermined distance. The height of the second annular protrusion 223 is lower than the height of the first annular protrusion 222. The bottom wall (i.e., the lowest point) of the third annular recess 232 corresponding to the upper side (i.e., the highest point) of the second annular protrusion 223 is separated by a second predetermined distance. The third annular recess 233 is provided close to the connection point and together forms the above-mentioned labyrinth passage. Further, the connection between the covering 230 and the deposition ring 220 is specifically a connection with the outermost edge of the deposition ring 220. Since the third annular recess 233 is provided close to the connection point, the covering 230 is specifically connected to the outermost edge of the deposition ring 220 through the outer wall of the third annular recess 233 (it is possible to form a certain protrusion), and a gap passage with a certain length is formed between the bottom wall (i.e., the lowest point) of the third annular recess 233 and the upper surface of the outer ring portion of the deposition ring 220 corresponding thereto. In this way, even if the reactants pass through the first-stage labyrinth barrier, they still need to pass through a very long gap passage to reach the connection point, and thus a second-stage labyrinth barrier is formed.

[0025] Thus, since a labyrinth passage is formed between the connection location of the covering 230 and the deposition ring 220 and the annular groove 221, the distance that the reactants deposited in the annular groove 221 reach the connection location during the semiconductor process treatment is significantly increased. Also, in order for the reactants to reach the connection location, it is necessary to cross multiple labyrinth barriers, and the difficulty for the reactants to reach the connection location is significantly increased. Therefore, the placement device of the present application can effectively reduce the probability of adhesion occurring between the covering 230 and the deposition ring 220 during the semiconductor process treatment.

[0026] In some examples, as shown in FIG. 4, the base 210 includes a first cylinder 211 and a second cylinder 212. The first cylinder 211 and the second cylinder 212 are vertically concentrically connected and provided, that is, the first cylinder 211 and the second cylinder 212 are coaxially connected and provided. The first cylinder 211 is located above the second cylinder 212, and the bottom surface radius of the first cylinder 211 is smaller than the bottom surface radius of the second cylinder 212, thereby forming a first surface 2111 and a second surface 2121 on the upper side of the base 210 respectively. In order to better place the wafer 400 on the first surface 2111, specifically, the diameter of the first surface 2111 may be smaller than the diameter of the wafer 400. Also, in order to meet the heating requirements when some semiconductor process equipment performs semiconductor process treatment on the wafer 400, the base 210 can perform corresponding heat treatment by incorporating some conventional heating structures.

[0027] In some examples, as shown in FIGS. 4, 5, and 6, the inner ring portion of the deposition ring 220 and the outer sidewall of the first cylinder 211 are positioned by the one-to-one correspondence and engagement of a plurality of first positioning bosses 225 and a plurality of first positioning grooves 2112. For those skilled in the art, the number of the first positioning bosses 225 and the number of the first positioning grooves 2112 can both be arbitrarily reduced according to actual needs, and it is only necessary to ensure that the numbers of both are equal. Also, the plurality of first positioning bosses 225 can all be provided on the inner circular side of the deposition ring 220, or all be provided on the outer sidewall of the first cylinder 211, or some can be provided on the inner circular side of the deposition ring 220 and the rest can be provided on the outer sidewall of the first cylinder 211, according to actual needs. Similarly, the plurality of first positioning grooves 2112 can all be provided on the inner circular side of the deposition ring 220, or all be provided on the outer sidewall of the first cylinder 211, or some can be provided on the inner circular side of the deposition ring 220 and the rest can be provided on the outer sidewall of the first cylinder 211, according to actual needs. Taking the examples shown in FIGS. 4, 5, and 6 as an example, specifically, the number of the first positioning bosses 225 and the number of the first positioning grooves 2112 can both be three. At this time, the three first positioning bosses 225 are all provided on the inner circular side of the deposition ring 220, and the three first positioning bosses 225 are distributed in an equilateral triangle, thereby ensuring the stability of the final positioning. Correspondingly, the three first positioning grooves 2112 are all provided on the outer sidewall of the first cylinder 211, and the three first positioning grooves 2112 are also distributed in a corresponding equilateral triangle, thereby engaging each first positioning boss 225 correspondingly into the corresponding first positioning groove 2112. Also, in order to further ensure the firmness of the engagement, specifically, each first positioning boss 225 can be a trapezoidal boss as shown in FIG. 7. Correspondingly, each first positioning groove 2112 can specifically be a trapezoidal groove that fits the trapezoidal boss, as shown in FIG. 4.

[0028] In some examples, to ensure that the center of the covering 230 always overlaps with the center of the deposition ring 220 and avoid the deviation phenomenon of the process result, as shown in FIGS. 5, 6, and 8, the inner ring portion of the covering 230 and the outer ring portion of the deposition ring 220 are positioned by the one-to-one corresponding engagement of a plurality of second positioning bosses 226 and a plurality of second positioning grooves 234. For those skilled in the art, the number of the second positioning bosses 226 and the number of the second positioning grooves 234 can both be arbitrarily reduced according to actual needs, and it is only necessary to ensure that the numbers of both are equal. In addition, the plurality of second positioning bosses 226 can all be provided on the upper surface of the outer ring portion of the deposition ring 220, or all be provided on the lower surface of the inner ring portion of the covering 230, or some can be provided on the upper surface of the outer ring portion of the deposition ring 220 and the rest can be provided on the lower surface of the inner ring portion of the covering 230 according to actual needs. Similarly, the plurality of second positioning grooves 234 can also all be provided on the upper surface of the outer ring portion of the deposition ring 220, or all be provided on the lower surface of the inner ring portion of the covering 230, or some can be provided on the upper surface of the outer ring portion of the deposition ring 220 and the rest can be provided on the lower surface of the inner ring portion of the covering 230 according to actual needs. Taking the examples shown in FIGS. 5, 6, and 8 as an example, the number of the second positioning bosses 226 and the number of the second positioning grooves 234 can specifically both be three. At this time, the three second positioning bosses 226 are all provided on the upper surface of the inner ring portion of the deposition ring 220, and the three second positioning bosses 226 are distributed in an equilateral triangle, thereby ensuring the stability of the final positioning. Correspondingly, the three second positioning grooves 234 are all provided on the lower surface of the inner ring portion of the covering 230, and the three second positioning grooves 234 are also distributed in a corresponding equilateral triangle, thereby engaging each second positioning boss 226 correspondingly in the corresponding second positioning groove 234. In addition, to further ensure the firmness of the engagement, each second positioning boss 226 can specifically be a conical boss as shown in FIG. 6. Correspondingly, each second positioning groove 234 can specifically be a conical groove conforming to the conical boss as shown in FIG. 4.

[0029] In some examples, considering that as the processing duration of the semiconductor process (which may specifically be a magnetron sputtering process) of the wafer 400 on the placement device 200 becomes longer, the reactants deposited in the annular groove 221 continue to increase, and thus the possibility of the reactants reaching the connection point between the covering 230 and the deposition ring 220 through the labyrinth passage increases. As shown in FIGS. 2, 3, and 5, a plurality of buckle grooves 227 are further provided on the outer ring portion of the deposition ring 220. The placement device further includes a plurality of buckles 240. The outer ring portion of the deposition ring 220 and the base 210 are tightly connected by engaging a plurality of buckles 240 and a plurality of buckle grooves 227 in a one-to-one correspondence. In this way, by engaging a plurality of buckles 240 and a plurality of buckle grooves 227 in a one-to-one correspondence, the deposition ring 220 is tightly fastened to the base 210, so that even if the covering 230 rises after the sticking phenomenon occurs at the connection point between the covering 230 and the deposition ring 220, the deposition ring 220 will not be interlocked. For those skilled in the art, the number of buckle grooves 227 can be arbitrarily reduced according to actual needs. Further, in order to tightly fasten the deposition ring 220 on the base 210, specifically, the number of buckle grooves 227 may be three, and the three buckle grooves 227 are distributed in an equilateral triangle. Also, as shown in FIGS. 3, 9, and 10, specifically, the buckle 240 may include a buckle rod 241. At one end of the buckle rod 241, a first hook 242 for hooking the corresponding buckle groove 227 is provided. At the other end of the buckle rod 241, a second hook 243 for hooking the bottom surface of the base 210 is provided. In this way, when assembling each buckle 240, first, the first hook 242 is correspondingly placed in the corresponding buckle groove 227, and then the buckle 240 is rotated around the upper end of the buckle rod 241, and the second hook 243 hooks the bottom surface of the base 210 to complete the assembly of the corresponding buckle 240.To further ensure the robustness of the assembly of the first hook 242 and prevent the first hook 242 from falling out of the corresponding buckle groove 227, the buckle groove 227 may specifically be a T-shaped groove, and the first hook 242 may specifically be a T-shaped hook that fits into the T-shaped groove. Also, to further strengthen the connection between the first hook 242 and the corresponding buckle groove 227, one socket cap may be further provided at each end of the horizontal portion of the T-shaped hook.

[0030] Finally, by providing three buckles 240, the deposition ring 220 can be firmly clamped to the base 210, and the up-and-down freedom of movement of the deposition ring 220 can be restricted. However, there is still a possibility of circumferential movement and the buckles 240 may fall off. Therefore, in some examples, as shown in FIGS. 2, 3, and 6, the placement device 200 is provided around the outer wall of the base 210 and further includes a fixing ring 250 that locks the plurality of buckles 240 to the outer wall of the base 210. Further, a third hook 244 for hooking the fixing ring is further provided at the other end of the buckle rod 241. In this way, by arranging the fixing ring 250 within the third hook 244 of each buckle 240, the circumferential freedom of movement of each buckle 240 is restricted, and further rotation and falling off of the buckles 240 are avoided.

[0031] In one embodiment, the embodiment of the present application further separately provides a placement device for semiconductor process equipment, and the structure and function of the placement device may specifically refer to the placement device of the above embodiment, and detailed description is omitted here.

[0032] Although the present application has been shown and described in one or more embodiments, those skilled in the art can conceive of equivalent modifications and changes based on the reading and understanding of this specification and the drawings. The present application includes all such modifications and changes and is limited only by the scope of the claims. In particular, with respect to the various functions performed by the above assembly, the terms used to describe such an assembly are not necessarily structurally equivalent to the known structures that perform the functions in the exemplary embodiments of this specification shown herein, but are intended to correspond to any assembly (except as otherwise indicated) that performs the specified functions of the assembly (e.g., functionally equivalent).

[0033] That is, the above are only examples of the present application and do not limit the scope of the patent of the present application. The combination of technical features between each embodiment, or equivalent structures or equivalent process conversions such as direct or indirect applications in other related technical fields, which are carried out using the content of the specification and drawings of the present application, are similarly included in the patent protection scope of the present application.

[0034] Also, in the description of the present application, the orientation or positional relationship indicated by terms such as "center", "longitudinal direction", "lateral direction", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is the orientation or positional relationship based on the illustration, and is only for the convenience of the description of the present application and for the sake of simplifying the description. It should be understood that it does not limit the present application because it does not indicate or imply that such a device or element must have a specific orientation or be configured and operated in a specific orientation. Also, for structural elements with the same or similar characteristics, the present application can be marked with the same or different reference numerals. Also, it should be understood that the terms "first" and "second" are used only for the purpose of description and do not indicate or imply relative importance or implicitly indicate the number of technical features being referred to. Thus, the features defined by "first" and "second" may explicitly or implicitly include one or more features. In the description of the present application, unless otherwise clearly and specifically limited, the meaning of "a plurality" is two or more.

[0035] In this application, the term "exemplary" is used to mean "used as an example, illustration, or explanation." Any embodiment described as "exemplary" in this application should not necessarily be construed as preferred or advantageous over other embodiments. This application provides the above description to enable those skilled in the art to make and use the application. In the above description, each detail is set forth for purposes of illustration. It should be understood by those skilled in the art that the application can be practiced without these specific details. In other embodiments, well-known structures and processes are not described in detail to avoid obscuring the description of the application with unnecessary detail. Accordingly, the application is not limited to the embodiments shown, but rather is to be accorded the widest scope consistent with the principles and features disclosed in this application.

Claims

1. It includes a first surface and a second surface. The first surface is used for placing a wafer. The height of the second surface is lower than that of the first surface. The second surface includes a base peripherally provided on the first surface, a deposition ring including an upper surface with an annular groove formed thereon, and a lower surface covering the second surface, and a cover ring. The outer ring portion of the cover ring is supported on the lining of the reaction chamber of a semiconductor process device. The inner ring portion of the cover ring is provided to cover the outer ring portion of the deposition ring. A plurality of annular protrusions and a plurality of annular recesses are provided on two opposing surfaces of the inner ring portion of the cover ring and the outer ring portion of the deposition ring, so as to form a labyrinth passage between the connection location of the cover ring and the deposition ring and the annular groove. A placement device for a semiconductor process device is characterized in this way.

2. The heights of the plurality of annular protrusions are different, and the depths of the plurality of annular recesses are different. All of the plurality of annular protrusions are provided on the upper surface of the outer ring portion of the deposition ring, and all of the plurality of annular recesses are provided on the lower surface of the inner ring portion of the cover ring, or All of the plurality of annular protrusions are provided on the lower surface of the inner ring portion of the cover ring, and all of the plurality of annular recesses are provided on the upper surface of the outer ring portion of the deposition ring, or The placement device according to claim 1, wherein a part of each of the plurality of annular protrusions and the plurality of annular recesses is provided on the upper surface of the outer ring portion of the deposition ring, and a part of each is provided on the lower surface of the inner ring portion of the cover ring.

3. The inner ring portion of the cover ring has an eaves structure, and the eaves structure shields a part of the annular groove. The placement device according to claim 1 is characterized in this way.

4. The base includes a first cylinder and a second cylinder. The first cylinder and the second cylinder are coaxially connected and provided. The first cylinder is located above the second cylinder. The bottom surface radius of the first cylinder is smaller than that of the second cylinder, so that the first surface and the second surface are respectively formed on the upper side of the base. The inner ring portion of the deposition ring and the outer side wall of the first cylinder are positioned by a one-to-one correspondence and engagement of a plurality of first positioning bosses and a plurality of first positioning grooves. The placement device according to claim 1 is characterized in this way.

5. The inner ring portion of the covering and the outer ring portion of the deposition ring are positioned by the corresponding engagement of a plurality of second positioning bosses and a plurality of second positioning grooves in a one-to-one manner. The placement device according to claim 1, characterized in that.

6. A plurality of buckle grooves are further provided on the outer ring portion of the deposition ring. The placement device further includes a plurality of buckles. The outer ring portion of the deposition ring and the base are fastened and connected by the corresponding engagement of a plurality of the buckles and a plurality of the buckle grooves in a one-to-one manner. The placement device according to claim 1, characterized in that.

7. The buckle includes a buckle rod. A first hook for hooking the corresponding buckle groove is provided at one end of the buckle rod. A second hook for hooking the bottom surface of the base is provided at the other end of the buckle rod. The placement device according to claim 6, characterized in that.

8. The buckle groove is a T-shaped groove. The first hook is a T-shaped hook adapted to the T-shaped groove. The placement device according to claim 7, characterized in that.

9. It further includes a fixing ring that is provided around the outer side wall of the base and locks a plurality of the buckles to the outer side wall of the base. The placement device according to claim 7, characterized in that.

10. A third hook for hooking the fixing ring is further provided at the other end of the buckle rod. The placement device according to claim 9, characterized in that.

11. A semiconductor process device, comprising the placement device according to any one of claims 1 to 10, a reaction chamber having a sealed space, and a semiconductor process processing assembly, wherein the placement device and the semiconductor process processing assembly are built in the sealed space. A semiconductor process device, characterized in that.

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