Substrate processing apparatus

Abstract

The substrate processing apparatus includes a chamber (1000), a substrate tray (400), a megasonic emission device (30), and a cleaning device (10). The substrate tray (400) is installed in the chamber (1000) and supports a substrate (500). The megasonic emission device (30) is used to transmit megasonic energy to a chemical solution between the megasonic emission device (30) and the substrate (500). The cleaning device (10) is used to clean the megasonic emission device (30) and includes an electrostatic conductor assembly (200) disposed therein. By electrically connecting the electrostatic conductor assembly (200) to the megasonic emission device (30), the charges accumulated in the megasonic emission device (30) are removed, preventing damage defects on the surface of the substrate (500) caused by the discharge of the charges accumulated in the megasonic emission device (30).

Description

Technical Field

[0001] The present invention relates to the field of semiconductor devices, and more particularly to substrate processing devices.

Background Art

[0002] SAPS (Space Alternative Phase Shift) megasonic technology uses an alternating current at a high frequency (0.8 - 1.0 MHz) to excite a piezoelectric resonator crystal to generate megasonic waves. Due to these megasonic waves, a thin acoustic boundary layer is formed near the surface of the substrate, pressure vibrations occur in the solution, ultra-high frequency and high energy are generated, and particles are effectively removed.

[0003] The core components of SAPS megasonic technology are a megasonic emission device including a piezoelectric transducer and an acoustic resonator. In the substrate cleaning process, a chemical solution is sprayed onto the surface of the substrate. The megasonic emission device is located above the surface of the substrate and descends to be immersed in the chemical solution. When the piezoelectric transducer is energized, it vibrates, and the acoustic resonator transmits high-frequency acoustic energy to the chemical solution. Cavitation vibrations are induced by the high-frequency acoustic energy, impurities particles on the surface of the substrate are liberated, and contaminants on the surface of the substrate are removed. At this time, as shown in FIG. 35, the megasonic emission device forms a parallel capacitor with the chemical solution 50' and the substrate 40'. Al2O3 sapphire 302' in the megasonic emission device is an insulator, and the piezoelectric transducer can be regarded as the upper electrode 301'. The upper electrode 301' is connected to a high-frequency power supply 303', there is a resistance between the upper electrode 301' and the high-frequency power supply 303', and the chemical solution 50' and the substrate 40' can be regarded as the lower electrode. When the substrate cleaning process is completed, the megasonic emission device is turned off, and the capacitor starts to discharge. The charge of the upper electrode 301' moves to a resistor (not shown), and the charge of the lower electrode flows to a substrate tray (not shown) that holds the substrate 40'. However, at this time, the high-frequency power supply 303' is disconnected, and the charge of the upper electrode 301' cannot be completely discharged and accumulates on the upper electrode 301'. As a result, residual charge gradually accumulates in the megasonic emission device.

[0004] When a certain amount of residual charge accumulates in the megasonic emission device, the residual charge causes discharge on the surface of the substrate 40' (see FIG. 36). As a result, damage defects occur on the surface of the substrate 40'. SUMMARY OF THE INVENTION

[0005] An object of the present invention is to solve the problem of the prior art that the surface of a substrate is damaged by residual charge accumulated in a megasonic emission device. Therefore, the present invention provides a substrate processing apparatus having an advantage of removing the charge accumulated in the megasonic emission device and preventing damage to the surface of the substrate caused by discharge of the residual charge accumulated in the megasonic emission device.

[0006] In order to solve the above problems, an embodiment of the present invention provides a substrate processing apparatus including the following. · A chamber · A substrate tray disposed in the chamber for supporting a substrate · A megasonic emission device for transmitting megasonic energy to a chemical solution between the megasonic emission device and the substrate · A cleaning device for cleaning the megasonic emission device, the cleaning device including an electrostatic conductor assembly provided in the cleaning device and electrically connected to the megasonic emission device to remove charge from the megasonic emission device

[0007] Another embodiment of the present invention provides a substrate processing apparatus including the following. · A chamber · A substrate tray for supporting a substrate · A megasonic emission device disposed in the chamber together with the substrate tray, the megasonic emission device being configured to transmit megasonic energy to a chemical solution between the megasonic device and the substrate · An electrically conductive body that is grounded and is configured such that when the megasonic emission device is positioned above the substrate, the electric charge accumulated in the megasonic emission device is conducted through the chemical liquid on the upper surface of the substrate to the electrically conductive body and discharged by the electrically conductive body

[0008] Another embodiment of the present invention provides a substrate processing apparatus including the following components. · A chamber · A substrate tray for supporting a substrate · A megasonic emission device that is disposed in the chamber together with the substrate tray and is configured to transmit megasonic energy to the chemical liquid between the megasonic emission device and the substrate · A conductive nozzle that is grounded and is configured such that when the megasonic emission device descends at a position above the substrate, the chemical liquid is first ejected onto the upper surface of the substrate, and when the megasonic emission device is immersed in the liquid film of the chemical liquid on the upper surface of the substrate, the electric charge accumulated in the megasonic emission device is conducted through the chemical liquid to the conductive nozzle and discharged by the conductive nozzle

[0009] Another embodiment of the present invention provides a substrate processing apparatus including the following components. · A chamber · A substrate tray for supporting a substrate · A megasonic emission device that is disposed in the chamber together with the substrate tray and is configured to transmit megasonic energy to the chemical liquid between the megasonic device and the substrate · A cleaning device for cleaning the megasonic emission device · A first ion rod that is disposed in the chamber and between the substrate tray and the cleaning device and has an upward air outlet, and is configured to blow ion wind through the air outlet toward the upper megasonic emission device above in order to neutralize the electric charge accumulated in the megasonic emission device when the megasonic emission device passes above the first ion rod during the process of moving between the substrate tray and the cleaning device

[0010] Another embodiment of the present invention provides a substrate processing apparatus comprising the following. · A chamber · A substrate tray for supporting a substrate · A megasonic emission device disposed in the chamber together with the substrate tray and configured to transmit megasonic energy to a chemical solution between the megasonic emission device and the substrate · A second ion rod provided on the inner wall of the chamber · A driving device for rotationally driving the megasonic emission device so that the megasonic emission device rotates within a region where the ion wind of the second ion rod reaches

[0011] As described above, the substrate processing apparatus of the present invention has the following advantages. By providing an electrostatic removal assembly (for example, an electrostatic conductor assembly, an electrical conductor, and an ion rod, etc.), the static electricity of the megasonic emission device can be removed, and the accumulation of excessive residual charges on the megasonic emission device can be prevented. When processing a substrate, the discharge of residual charges on the surface of the substrate can be prevented, thereby preventing damage to the surface of the substrate.

[0012] Other features of the present invention and the corresponding beneficial effects thereof will be described in the latter part of the specification. It should be understood that at least some beneficial effects will become apparent from the description of the present invention.

Brief Description of the Drawings

[0013]

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MODE FOR CARRYING OUT THE INVENTION

[0014] The following description of the embodiments of the present invention is presented using specific specific embodiments, and from the content disclosed herein, other advantages and effects of the present invention will be readily understood by those skilled in the art. The description of the present invention is presented based on preferred embodiments, but this does not mean that the features of the present invention are limited to those embodiments. Rather, the description of the present invention is presented with the intention of including other alternatives and modifications that can be extended based on the claims. To deepen the understanding of the present invention, the following description includes many specific details. The present invention may be implemented without using these details. Also, to avoid obscuring or confusing the gist of the present invention, some specific details are omitted from the description. The embodiments of the present invention and the features of the embodiments may be applied in combination with each other as long as they do not conflict with each other.

[0015] It should be noted that in this specification, similar reference signs and letters indicate similar items in the following accompanying drawings. Therefore, if an item is defined in one drawing, there is no need to redefine and explain that item in subsequent drawings.

[0016] The technical solution of the present invention will be clearly and detailedly described below in conjunction with the accompanying drawings. It is obvious that the described embodiments are part of the embodiments of the present invention, not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are included in the protection scope of the present invention.

[0017] In the description of the present invention, it should be noted that terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner" and "outer" are based on the directions and positional relationships shown in the accompanying drawings. These terms are used for convenience in describing the present invention and to simplify the description, and do not imply or suggest that the corresponding devices or elements must be constructed and operated in a specific direction. Therefore, these terms should not be construed as limiting matters of the present invention. Further, the terms "first", "second" and "third" are used for convenience of explanation and do not indicate or imply relative importance.

[0018] In the description of the present invention, unless specifically specified and limited otherwise, the terms "installation", "connection" and "contact" should be construed in a broad sense. For example, these may be fixed connections, detachable connections, integrated connections, mechanical connections or electrical connections, direct connections or connections via a medium, and further may be connections between two elements. Those skilled in the art will understand these terms in a specific context.

[0019] In order to make the object, technical solution and advantages of the present invention more clear, the embodiments of the present invention will be described in more detail below with reference to the accompanying drawings.

[0020] (Embodiment 1) The megasonic emission device (for example, the megasonic emission device 30 in FIG. 1) is applied to the substrate cleaning process, but is not limited thereto, and can also be applied to the substrate pre-wetting process and the like.

[0021] Taking the substrate cleaning process as an example, in the substrate cleaning process, it is understood by those skilled in the art that the substrate tray in the chamber (refer to the substrate tray 400 in FIG. 5) supports the substrate (refer to the substrate 500 in FIG. 5) and rotates this substrate. A plurality of edge clamps are provided at the edge of the substrate tray, and these plurality of clamps fix the substrate at a predetermined position. The megasonic emission device is moved to a position above the surface of the substrate, and at least one nozzle injects a chemical solution onto the surface of the substrate, and the megasonic emission device descends and is immersed in the chemical solution. By controlling the vertical movement of the megasonic emission device, the thickness of the chemical solution film formed between the megasonic radiation surface and the surface of the substrate is adjusted, the total energy of the megasonic waves received by each point on the substrate during one cycle is made constant, and the energy at each point on the substrate is made uniform. The method of cleaning the substrate using the megasonic emission device is described in detail in the Chinese invention patent with publication number CN101879511B, which is incorporated herein by reference.

[0022] In the substrate cleaning process, although the megasonic emission device is in direct contact with the chemical solution, since the edge clamps that hold the edge of the substrate on the substrate tray are usually composed of a non-conductive insulating material, the electric charges accumulated in the megasonic emission device are not efficiently conducted and removed by the chemical solution. When a certain amount of residual charges that are not removed accumulates, a discharge phenomenon occurs on the surface of the substrate, and damage occurs on the surface of the substrate.

[0023] Therefore, the present invention proposes a cleaning device for a substrate processing device that cleans the megasonic emission device and simultaneously removes the residual charges accumulated in the megasonic emission device after the substrate cleaning process is completed.

[0024] As shown in FIG. 1, after the substrate cleaning process is completed, the megasonic emission device 30 returns to the initial position for self-cleaning within the cleaning device 10 used to clean the megasonic emission device 30. At this point, the megasonic emission device 30 stops emitting radio frequency energy and does not generate additional surface charges.

[0025] The cleaning device 10 provided by the present invention can remove the charges accumulated in the megasonic emission device 30 by discharging the residual charges accumulated in the megasonic emission device 30.

[0026] As shown in FIG. 2, the cleaning device 10 includes a cleaning tank 100 and an electrostatic conductor assembly 200. The cleaning tank 100 is used to store a cleaning liquid for cleaning the megasonic emission device 30. An electrostatic conductor assembly 200 is provided in the cleaning tank 100 of the cleaning device 10, and the electrostatic conductor assembly 200 is electrically connected to the megasonic emission device 30 and used to remove the charges accumulated in the megasonic emission device 30.

[0027] In this embodiment, as the cleaning liquid, a mixture of CO2 in pure water of 0.1 MΩ is selected. The cleaning tank 100 is formed of an organic material such as PTFE (polytetrafluoroethylene) or PFA (polyfluoroalkoxy) that can be regarded as non-conductive. In the present invention, an electrostatic conductor assembly 200 for electrically connecting to the megasonic emission device 30 is provided in the cleaning tank 100 of the cleaning device 10, whereby the charges accumulated in the megasonic emission device 30 can be discharged by the electrostatic conductor assembly 200. Therefore, during the substrate cleaning process, damage defects on the surface of the substrate caused by the residual charges accumulated in the megasonic emission device 30 can be prevented.

[0028] In other alternative embodiments, by providing the electrostatic conductor assembly 200 in the cleaning tank 100 of the cleaning device 10, the electrostatic conductor assembly 200 can be brought into direct contact with the megasonic emission device 30. The charges accumulated in the megasonic emission device 30 are directly conducted and removed through the electrostatic conductor assembly 200.

[0029] As shown in FIGS. 1 to 2, the electrostatic conductor assembly 200 is fixed to the bottom of the cleaning tank 100 (i.e., the bottom of the cleaning device 10), and the electrostatic conductor assembly 200 is grounded.

[0030] When cleaning the megasonic emission device 30 in the cleaning tank 100 of the cleaning device 10, the electrostatic conductor assembly 200 is electrically connected to the megasonic emission device 30 through the cleaning liquid in the cleaning tank 100, and the charge accumulated in the megasonic emission device 30 is removed by passing through the cleaning liquid and the electrostatic conductor assembly 200 in sequence.

[0031] The electrostatic conductor assembly 200 includes a connection terminal 210 and a wiring 220, and the connection terminal 210 and the wiring 220 are electrically connected. The connection terminal 210 is fixed to the bottom of the cleaning tank 100, and the wiring 220 is grounded.

[0032] Furthermore, the first end portion 2101 of the connection terminal 210 penetrates the bottom of the cleaning tank 100 and is fixed to the bottom of the cleaning tank 100 by screw connection. The first end portion 2101 of the connection terminal 210 is in contact with the cleaning liquid, and the second end portion 2102 of the connection terminal 210 is connected to the wiring 220. The screw connection is specifically an NPT (National Pipe Thread) screw connection.

[0033] In this embodiment, the connection terminal 210 is conductive, and the wiring 220 is fixed to the second end portion 2102 of the connection terminal 210 by a fixing bolt 240.

[0034] Also, the connection terminal 210 may be non-conductive, and a cavity may be provided in the connection terminal 210 so that the wiring 220 is electrically connected to the cleaning liquid through the cavity.

[0035] As shown in FIGS. 3 and 4, the electrostatic conductor assembly 200 further includes a protective member 230 that covers the second end portion 2102 of the connection terminal 210. The second end portion 2102 of the connection terminal 210 extends outside the cleaning tank 100. Therefore, the protective member 230 is disposed outside the cleaning tank 100, and the side wall of the protective member 230 is fixed to the outer periphery of the connection terminal 210 by a plurality of top screws 250. The protective member 230 may partially cover the portion of the connection terminal 210 that extends outside the cleaning tank 100, which includes covering the second end portion 2102 of the connection terminal 210. In order to prevent the wiring 220 from being interfered with from the outside and causing poor contact, it mainly covers the portion where the connection terminal 210 exposes the wiring 220. Further, the protective member 230 may completely cover the portion of the connection terminal 210 that extends outside the cleaning tank 100. In that case, corrosion, leakage, etc. of that portion of the connection terminal 210 can also be prevented.

[0036] A through-wiring hole 231 is also provided in the side wall of the protective member 230, and the wiring 220 fixed to the second end portion 2102 of the connection terminal 210 is grounded through the through-wiring hole 231.

[0037] As shown in FIG. 2, the cleaning device 10 further includes an overflow tank 300, an inlet 120, and an outlet. The overflow tank 300 surrounds the cleaning tank 100. A partition wall 110 is provided between the overflow tank 300 and the cleaning tank 100. The excess cleaning liquid in the cleaning tank 100 passes through the partition wall 110 and flows into the overflow tank 300, and is discharged from the outlet.

[0038] The outlet includes a first outlet 140 and a second outlet 310. Both the inlet 120 and the first outlet 140 are connected to the cleaning tank 100. The inlet 120 is used to flow the cleaning liquid into the cleaning tank 100. The first outlet 140 is used to discharge the cleaning liquid from the cleaning tank 100. The second outlet 310 is connected to the overflow tank 300 and is used to discharge the cleaning liquid from the overflow tank 300.

[0039] The inlet 120 and the first outlet 140 are provided at the bottom of the cleaning tank 100. The second outlet 310 is provided at the bottom of the overflow tank 300.

[0040] (Embodiment 2) As shown in FIGS. 5 and 6, the present invention proposes a substrate processing apparatus including a chamber 1000, a substrate tray 400, a cleaning device 10A, and a megasonic emission device 30A. The cleaning device 10A may be an existing cleaning device, or the cleaning device 10 of Embodiment 1 may be used.

[0041] Inside the chamber 1000, a substrate tray 400, a cleaning device 10A, and a megasonic emission device 30A are provided. The substrate tray 400 is used to support the substrate 500. The megasonic emission device 30A is used to transmit megasonic energy to the chemical solution between the megasonic emission device 30A and the substrate 500 in order to process the substrate 500, and moves to the cleaning device 10A for self-cleaning after the completion of this processing step.

[0042] As an example of the substrate cleaning process, the method of cleaning the substrate includes the following multiple steps. · Fix the substrate 500 using the substrate tray 400. · Inject the chemical solution onto the upper surface of the substrate 500. · Move the megasonic emission device 30A to a position above the substrate 500, and lower the megasonic emission device 30A so as to form a gap between the megasonic emission device 30A and the upper surface of the substrate 500. · Rotate the substrate tray 400 so that the gap between the megasonic emission device 30A and the upper surface of the substrate 500 is completely and continuously filled with the cleaning solution in order to stably transmit the megasonic energy to the entire surface of the substrate 500 through the cleaning solution.

[0043] The method of cleaning the substrate is described in detail in the Chinese invention patent with publication number CN109890520A, which is incorporated herein by reference.

[0044] As shown in FIGS. 6 and 7, the substrate processing apparatus includes a first cantilever 360 and a second cantilever 370 that are interconnected. The first cantilever 360 is installed above the megasonic emission device 30A, and a first housing 361 is provided on the first cantilever 360. The actuator 1002 of the substrate processing apparatus moves the second cantilever 370 up and down via a screw rod 1003 and rotates the second cantilever 370, thereby moving the megasonic emission device 30A above the substrate 500 or adjusting the gap between the megasonic emission device 30A and the upper surface of the substrate 500. A second housing 371 is provided on the second cantilever 370.

[0045] As shown in FIGS. 8 to 11, the substrate processing apparatus further includes an electrical conductor 600 to which a ground wiring 630 is electrically connected via a connector 640.

[0046] The electrical conductor 600 is configured such that the lower surface 611 of the electrical conductor 600 contacts the chemical solution on the upper surface of the substrate 500 before the lower surface 305 of the megasonic emission device 30A. When the megasonic emission device 30A is immersed in the chemical solution on the upper surface of the substrate 500, the electric charge accumulated in the megasonic emission device 30A is conducted to the electrical conductor 600 through the chemical solution and discharged by the electrical conductor 600. Next, the megasonic emission device 30A is activated to transmit megasonic energy to the chemical solution between the megasonic emission device 30A and the substrate 500, so that the megasonic energy is stably transmitted to the entire surface of the substrate 500 through the chemical solution. Even after the megasonic emission device 30A is activated, the electrical conductor 600 maintains conductivity and can remove static electricity generated during the processing of the substrate 500. In the present embodiment, a central nozzle 362 is used to inject the chemical solution onto the upper surface of the substrate 500. The central nozzle 362 is provided on the first cantilever 360 integrated with the megasonic emission device 30A. In other alternative embodiments, a separately provided nozzle may also be used to inject the chemical solution onto the upper surface of the substrate 500.

[0047] Also, during the descent of the megasonic emission device 30A, the lower surface 305 of the megasonic emission device 30A is kept parallel to the upper surface of the substrate 500 on the substrate tray 400. Alternatively, first, the lower surface 305 of the megasonic emission device 30A is inclined with respect to the upper surface of the substrate 500 to discharge the charges accumulated in the megasonic emission device 30A through the chemical solution and the electrical conductor 600, and then the lower surface 305 of the megasonic emission device 30A is made parallel to the upper surface of the substrate 500. Then, the megasonic emission device 30A is activated to process the substrate 500.

[0048] The shape of the megasonic emission device 30A may be a polygon, an ellipse, a semi - circle, a quarter - circle, a circle, etc. The shape of the electrical conductor 600 is changed according to the shape of the megasonic emission device 30A.

[0049] Preferably, the megasonic emission device 30A is in a triangular shape or a pie shape similar to a triangular shape. The electrical conductor 600 is disposed at least at one position among the first side wall 301, the second side wall 302, and the third side wall 303 of the megasonic emission device 30A. The lower surface 611 of the electrical conductor 600 is at a position exceeding the lower surface 305 of the megasonic emission device 30A.

[0050] As shown in FIGS. 8 to 10, the electrical conductor 600 is disposed at the position of the first side wall 301 of the megasonic emission device 30A. The electrical conductor 600 is, for example, a conductive rod or a conductive block including a conductive portion 610 and a fixing portion 620. The conductive portion 610 is fixed to the first cantilever 360 via the fixing portion 620, and the conductive portion 610 is in contact with the first side wall 301 of the megasonic emission device 30A. The lower surface 611 of the conductive portion 610 is at a position exceeding the lower surface 305 of the megasonic emission device 30A. Since the lower surface 611 of the electrical conductor 600 first contacts the chemical solution on the upper surface of the substrate 500, when the megasonic emission device 30A is immersed in the liquid film of the chemical solution on the upper surface of the substrate 500, based on the principle that electrons preferentially conduct through a path with low resistance, the charges accumulated in the megasonic emission device 30A are conducted through the chemical solution to the grounded electrical conductor 600 and removed from the side surface, thereby avoiding the diffusion of charges to the substrate 500.

[0051] As shown in FIGS. 12 to 14, the conductive portion 610 of the electrical conductor 600 is not in contact with the first side wall 301 of the megasonic emission device 30A, that is, there is a gap between the conductive portion 610 of the electrical conductor 600 and the first side wall 301 of the megasonic emission device 30A, and the electrical conductor 600 itself may be grounded to conduct charges. Similarly, based on the principle that electrons preferentially conduct through a path with low resistance, the charges accumulated in the megasonic emission device 30A are conducted to the grounded electrical conductor 600 through the chemical solution and removed from the side surface, thereby avoiding the movement of charges to the substrate 500. In the present embodiment, the fixing portion 620 can be screwed to the side wall of the first cantilever 360.

[0052] In other embodiments, regardless of whether the conductive portion 610 of the electrical conductor 600 is in contact with the first side wall 301 of the megasonic emission device 30A, the conductive portion 610 of the electrical conductor 600 may be inclined with respect to the first side wall 301 of the megasonic emission device 30A, whereby the conductive portion 610 contacts the chemical solution before the megasonic emission device 30A.

[0053] Similarly, as shown in FIG. 15, the electrical conductor 600 may be disposed at the position of the second side wall 302 of the megasonic emission device 30A while having a conductive portion 610 that contacts the second side wall 302 of the megasonic emission device 30A. As shown in FIG. 16, the conductive portion 610 of the electrical conductor 600 may not be in contact with the second side wall 302 of the megasonic emission device 30A. In other embodiments, the electrical conductor 600 may be provided at both the positions of the first side wall 301 and the second side wall 302 of the megasonic emission device 30A so that the electrical conductor 600 contacts the chemical solution before the megasonic emission device 30A.

[0054] The electrical conductor 600 may be provided at the position of the third side wall 303 of the megasonic emission device 30A, and the shape of the electrical conductor 600 is changed according to the shape of the third side wall 303. The conductive portion 610 of the electrical conductor 600 is electrically connected to the fixing portion 620, and the grounding wiring 630 is electrically connected to the electrical conductor 600 through the connector 640 provided in the fixing portion 620. The fixing portion 620 is fixed to the first cantilever 360, and the conductive portion 610 of the electrical conductor 600 is in contact with (see FIG. 17) or not in contact with (see FIGS. 18 and 19) the third side wall 303 of the megasonic emission device 30A.

[0055] Furthermore, the electrical conductor 600 may be provided at the positions of the first side wall 301, the second side wall 302, and the third side wall 303 of the megasonic emission device 30A. In this case, the conductive portion 610 of the electrical conductor 600 is in contact with (see FIG. 20) or not in contact with (see FIG. 21) the first side wall 301, the second side wall 302, and the third side wall 303 of the megasonic emission device 30A so that the electrical conductor 600 comes into contact with the chemical solution before the megasonic emission device 30A.

[0056] In this embodiment, the material of the electrical conductor 600 may be an antistatic conductive material such as ESD PTFE, ESD PEEK, ESD PCTFE, ESD ETFE, or ESD PFA.

[0057] The lower surface 611 of the conductive portion 610 of the electrical conductor 600 may be flush with the lower surface 305 of the megasonic emission device 30A. The lower surface 611 of the electrical conductor 600 and the lower surface 305 of the megasonic emission device 30A are simultaneously in contact with the chemical solution on the upper surface of the substrate 500, and the charge accumulated in the megasonic emission device 30A is conducted to the electrical conductor 600 through the chemical solution and discharged by the electrical conductor 600.

[0058] (Embodiment 3) As shown in FIGS. 5 and 6, the substrate processing apparatus according to the present embodiment includes a chamber 1000, a substrate tray 400, a cleaning device 10A, and a megasonic emission device 30A. The cleaning device 10A may be an existing cleaning device, or the cleaning device 10 of Embodiment 1 may be used.

[0059] The substrate tray 400, the cleaning device 10A, and the megasonic emission device 30A are arranged inside the chamber 1000. The substrate tray 400 is used to support the substrate 500. The megasonic emission device 30A is used to transmit megasonic energy to the chemical solution between the megasonic emission device 30A and the substrate 500 for processing the substrate 500, and moves to the cleaning device 10A for self-cleaning after the completion of this processing step.

[0060] As shown in FIGS. 22 to 24, the conductive nozzle 700 is provided on one side of the megasonic emission device 30A. As shown in FIGS. 25 and 26, the conductive nozzle 700 has an inlet 710 and a plurality of outlets 720. The inlet 710 is provided at the upper part of the conductive nozzle 700, and the plurality of outlets 720 are evenly distributed and arranged at the lower part of the conductive nozzle 700.

[0061] As shown in FIGS. 27 and 28, when the megasonic emission device 30A descends at a position above the substrate 500, the conductive nozzle 700 first injects the chemical solution onto the upper surface of the substrate 500 through the plurality of outlets 720. When the megasonic emission device 30A is immersed in the liquid film of the chemical solution on the upper surface of the substrate 500, the charge accumulated in the megasonic emission device 30A is conducted to the conductive nozzle 700 through the chemical solution and discharged by the conductive nozzle 700, whereby the static electricity of the megasonic emission device 30A is removed. Note that a ground wiring 730 is electrically connected to the conductive nozzle 700 via a connector 740.

[0062] As shown in FIGS. 24 and 28, the conductive nozzle 700 is in contact with the first side wall 301 of the megasonic emission device 30A. In other embodiments, the conductive nozzle 700 and the first side wall 301 of the megasonic emission device 30A may be arranged with a gap therebetween, that is, they may be installed so as not to be in contact.

[0063] The lower surface 701 of the conductive nozzle 700 is positioned higher than the lower surface 305 of the megasonic emission device 30A. In other embodiments, the lower surface 701 of the conductive nozzle 700 may be lower than the lower surface 305 of the megasonic emission device 30A or may be on the same plane, depending on actual requirements.

[0064] Also, while the conductive nozzle 700 is injecting the chemical solution, the central nozzle 362 provided at the tip of the first cantilever 360 can also inject the chemical solution onto the upper surface of the substrate 500. By controlling the rotation speed of the substrate tray 400, the gap between the megasonic emission device 30A and the upper surface of the substrate 500 is completely and continuously filled with the chemical solution, whereby megasonic energy is stably transmitted to the entire surface of the substrate 500 through the chemical solution. In other embodiments, only the conductive nozzle 700 may be used to inject the chemical solution onto the upper surface of the substrate 500.

[0065] In the present embodiment, the conductive nozzle 700 is formed of an antistatic conductive material such as ESD PTFE, ESD PEEK, ESD PCTFE, ESD ETFE, or ESD PFA.

[0066] (Embodiment 4) Embodiment 4 shows another embodiment for removing static electricity from the megasonic emission device 30A. The first ion rod 800 is used to neutralize the charges accumulated in the megasonic emission device 30A.

[0067] As shown in FIGS. 29 and 30, the substrate processing apparatus according to the present embodiment includes a chamber 1000, a substrate tray 400, a cleaning device 10A, and a megasonic emission device 30A. Inside the chamber 1000, a substrate tray 400, a cleaning device 10A, and a megasonic emission device 30A are provided. The substrate tray 400 is used to support the substrate 500. The cleaning device 10A is used to clean the megasonic emission device 30A. The cleaning device 10A may be an existing cleaning device, or the cleaning device 10 of Embodiment 1 may be used.

[0068] The substrate processing apparatus further includes a first ion rod 800 and a second ion rod 900. The first ion rod 800 is disposed between the substrate tray 400 and the cleaning device 10A in the chamber 1000, and the air outlet 810 of the first ion rod 800 faces upward. When the megasonic emission device 30A moves from the substrate tray 400 to the cleaning device 10A or from the cleaning device 10A to the substrate tray 400, the bottom of the megasonic emission device 30A faces downward and passes through the first ion rod 800. The first ion rod 800 blows ion wind (ionized wind) toward the megasonic emission device 30A above through the air outlet 810 to neutralize the charges accumulated in the megasonic emission device 30A, thereby preventing these charges from moving to the surface of the substrate 500 and causing a discharge phenomenon. Further, even when the megasonic emission device 30A stops at an arbitrary position within the region where the ion wind of the first ion rod 800 reaches, the first ion rod 800 may blow ion wind onto the megasonic emission device 30A to neutralize the charges accumulated in the megasonic emission device 30A and achieve the purpose of removing static electricity.

[0069] The second ion rod 900 is also provided in the chamber 1000. The second ion rod 900 is disposed above the window 1001. The substrate 500 is carried into or out of the chamber 1000 through the window. When the substrate 500 is placed on the substrate tray 400, the substrate 500 is located within the region where the ion wind of the second ion rod 900 reaches. The second ion rod 900 blows ion wind from the air outlet 910 onto the substrate 500 to neutralize the residual charges on the surface of the substrate 500.

[0070] (Embodiment 5) Embodiment 5 shows another embodiment for removing static electricity of the megasonic emission device 30A. The second ion rod 900 is used to neutralize the charges accumulated in the megasonic emission device 30A.

[0071] As shown in FIGS. 31 and 32, the substrate processing apparatus according to the present embodiment includes a second ion rod 900 and a megasonic emission device 30A.

[0072] In the prior art, the second ion rod 900 is generally used to neutralize residual charges on the surface of the substrate 500. Its operating principle is to pressurize the silicon needles in the ion rod to ionize (ionize) air and water vapor in the atmosphere to generate positive and negative charges, and then use N2 to discharge these positive and negative charges from the air outlet 910 to neutralize the residual charges on the surface of the substrate 500.

[0073] In the present embodiment, the second ion rod 900 is provided on the inner wall of the chamber 1000. The inner wall is provided with a window 1001 (see the window 1001 shown in FIG. 30 of Embodiment 4) for loading and unloading the substrate 500, and the second ion rod 900 is disposed above the window 1001.

[0074] As shown in FIGS. 33 and 34, the substrate processing apparatus further includes a first cantilever 360 and a second cantilever 370. The first cantilever 360 is installed above the megasonic emission device 30A. The second cantilever 370 is provided with a driving device 372. The driving device 372 rotates the megasonic emission device 30A by driving the first cantilever 360, and rotates the megasonic emission device 30A within the region where the ion wind of the second ion rod 900 reaches.

[0075] The actuator 1002 of the substrate processing apparatus drives the second cantilever 370 up and down via the screw rod 1003 and rotates the second cantilever 370. After the processing of the megasonic emission device 30A is completed, the second cantilever 370 driven by the actuator 1002 is connected to the first cantilever 360 to raise the megasonic emission device 30A and move the megasonic emission device 30A to the region where the ion wind of the second ion rod 900 reaches (the location where the megasonic emission device 30A is arranged as shown in FIG. 32). Then, by rotating the megasonic emission device 30A by the driving device 372 on the second cantilever 370, the megasonic emission device 30A is rotated by an arbitrary angle, whereby the ion wind of the second ion rod 900 is uniformly blown to all parts of the megasonic emission device 30A through the air outlet 910, and the purpose of removing static electricity is achieved.

[0076] Finally, it should be noted that the above embodiments are only used to explain the technical solutions of the present invention and do not limit the present invention. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand the following. It is possible to change the technical solutions described in the above embodiments or replace some or all of the technical features therein with equivalent ones. However, even if such changes or replacements are made, the essence of the corresponding technical solutions does not deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate processing apparatus, comprising: a chamber; a substrate tray disposed in the chamber for supporting a substrate; a megasonic emission device for transmitting megasonic energy to a chemical solution between the megasonic emission device and the substrate; a cleaning device for cleaning the megasonic emission device, the cleaning device including an electrostatic conductor assembly provided therein and electrically connected to the megasonic emission device to remove electric charges from the megasonic emission device; The substrate processing apparatus comprising the above.

2. The substrate processing apparatus according to claim 1, wherein: the electrostatic conductor assembly is fixed to the bottom of the cleaning device and grounded; when the megasonic emission device is being cleaned in the cleaning device, the electrostatic conductor assembly is electrically connected to the megasonic emission device by the cleaning liquid in the cleaning device, and electric charges accumulated in the megasonic emission device are removed by passing through the cleaning liquid in the cleaning device and the electrostatic conductor assembly in sequence; The substrate processing apparatus.

3. The substrate processing apparatus according to claim 2, wherein: the electrostatic conductor assembly includes a connection terminal and a wiring, the connection terminal and the wiring are electrically connected, the connection terminal is fixed to the bottom of the cleaning device, and the wiring is grounded; The substrate processing apparatus.

4. The substrate processing apparatus according to claim 3, wherein: a first end of the connection terminal penetrates the bottom of the cleaning device and is electrically connected to the cleaning liquid, and a second end of the connection terminal is connected to the wiring; The substrate processing apparatus.

5. The substrate processing apparatus according to claim 3, wherein: the connection terminal penetrates the bottom of the cleaning device, a cavity is provided inside the connection terminal, and the wiring is electrically connected to the cleaning liquid through the cavity; The substrate processing apparatus.

6. The substrate processing apparatus according to claim 4, wherein: the electrostatic conductor assembly further includes a protection member covering the second end of the connection terminal, a through-wiring hole is provided in the protection member, and the wiring is grounded through the through-wiring hole; The substrate processing apparatus.

7. The substrate processing apparatus according to claim 1, further comprising: an electrically conductive body that is grounded. When the megasonic emission device is positioned above the substrate, the electric conductor is configured such that the electric charge accumulated in the megasonic emission device is conducted to the electric conductor through the chemical solution on the upper surface of the substrate and discharged by the electric conductor. Substrate processing apparatus.

8. The substrate processing apparatus according to claim 7, when the megasonic emission device descends at a position above the substrate, the lower surface of the electric conductor contacts the chemical solution on the upper surface of the substrate before or simultaneously with the lower surface of the megasonic emission device, and the electric charge accumulated in the megasonic emission device is conducted to the electric conductor by the chemical solution and discharged by the electric conductor. Substrate processing apparatus.

9. The substrate processing apparatus according to claim 8, further comprising a first cantilever installed on the upper part of the megasonic emission device, the electric conductor includes a conductive part and a fixing part connected to each other, the conductive part is fixed to the first cantilever through the fixing part, the conductive part is in contact with or arranged with a gap from at least one of a plurality of side walls of the megasonic emission device, and the lower surface of the conductive part is at a position exceeding the lower surface of the megasonic emission device. Substrate processing apparatus.

10. The substrate processing apparatus according to claim 9, the megasonic emission device is triangular or pie-shaped, has a first side wall, a second side wall, and a third side wall, and the conductive part is in contact with or arranged with a gap from at least one of the first side wall, the second side wall, and the third side wall of the megasonic emission device. Substrate processing apparatus.

11. The substrate processing apparatus according to any one of claims 7 to 10, wherein the electric conductor is formed of ESD PTFE, ESD PEEK, ESD PCTFE, ESD ETFE, or ESD PFA. Substrate processing apparatus.

12. The substrate processing apparatus according to claim 1, further comprising a conductive nozzle grounded, the conductive nozzle is configured to first inject the chemical solution onto the upper surface of the substrate when the megasonic emission device descends at a position above the substrate, and when the megasonic emission device is immersed in the liquid film of the chemical solution on the upper surface of the substrate, the electric charge accumulated in the megasonic emission device is conducted to the conductive nozzle through the chemical solution and discharged by the conductive nozzle. Substrate processing apparatus.

13. The substrate processing apparatus according to claim 12, wherein the conductive nozzle is provided on one side of the megasonic emission device, substrate processing apparatus.

14. The substrate processing apparatus according to claim 12 or 13, wherein the conductive nozzle has an inlet and a plurality of outlets, the inlet is provided at the upper part of the conductive nozzle, and the plurality of outlets are evenly distributed and arranged at the lower part of the conductive nozzle, substrate processing apparatus.

15. The substrate processing apparatus according to claim 12 or 13, wherein the conductive nozzle is formed of ESD PTFE, ESD PEEK, ESD PCTFE, ESD ETFE or ESD PFA, substrate processing apparatus.

16. The substrate processing apparatus according to claim 1, wherein a first ion rod is further provided, which is arranged in the chamber, between the substrate tray and the cleaning device, and has an upward air outlet, when the megasonic emission device passes above the first ion rod during the process of moving between the substrate tray and the cleaning device, the first ion rod is configured to blow ion wind through the air outlet toward the megasonic emission device above in order to neutralize the charge accumulated in the megasonic emission device, substrate processing apparatus.

17. The substrate processing apparatus according to claim 1 or 16, wherein a second ion rod provided on the inner wall of the chamber, and a driving device for rotationally driving the megasonic emission device so that the megasonic emission device rotates within the range where the ion wind of the second ion rod reaches, substrate processing apparatus further comprising.

18. The substrate processing apparatus according to claim 17, wherein a first cantilever and a second cantilever are further provided, the first cantilever is installed at the upper part of the megasonic emission device, the driving device is provided on the second cantilever, and the driving device rotates the megasonic emission device by driving the first cantilever so that the megasonic emission device rotates within the region where the ion wind of the second ion rod reaches, substrate processing apparatus.

19. A substrate processing apparatus, comprising a chamber, a substrate tray for supporting a substrate, A megasonic emission device disposed in the chamber together with the substrate tray, the megasonic emission device configured to transmit megasonic energy to a chemical solution between the megasonic emission device and the substrate. An electrically conductive body that is grounded, and when the megasonic emission device is located above the substrate, the electric charge accumulated in the megasonic emission device is conducted to the electrically conductive body through the chemical solution on the upper surface of the substrate and discharged by the electrically conductive body. A substrate processing apparatus comprising the above.

20. The substrate processing apparatus according to claim 19, When the megasonic emission device descends at a position above the substrate, the lower surface of the electrically conductive body contacts the chemical solution on the upper surface of the substrate before or simultaneously with the lower surface of the megasonic emission device, and the electric charge accumulated in the megasonic emission device is conducted to the electrically conductive body through the chemical solution and discharged by the electrically conductive body. A substrate processing apparatus.

21. The substrate processing apparatus according to claim 20, Further comprising a first cantilever installed on the upper part of the megasonic emission device. The electrically conductive body includes a conductive part and a fixing part connected to each other. The conductive part is fixed to the first cantilever through the fixing part. The conductive part is in contact with at least one of a plurality of side walls of the megasonic emission device or is arranged with a gap therebetween. The lower surface of the conductive part is located at a position exceeding the lower surface of the megasonic emission device. A substrate processing apparatus.

22. The substrate processing apparatus according to claim 21, The megasonic emission device has a triangular shape or a pie shape and has a first side wall, a second side wall, and a third side wall. The conductive part is in contact with at least one of the first side wall, the second side wall, and the third side wall of the megasonic emission device or is arranged with a gap therebetween. A substrate processing apparatus.

23. A substrate processing apparatus, A chamber, A substrate tray for supporting a substrate, A megasonic emission device disposed in the chamber together with the substrate tray, the megasonic emission device configured to transmit megasonic energy to a chemical solution between the megasonic emission device and the substrate. A conductive nozzle that is grounded, and when the megasonic emission device descends at a position above the substrate, first injects the chemical solution onto the upper surface of the substrate, and when the megasonic emission device is immersed in the liquid film of the chemical solution on the upper surface of the substrate, the charge accumulated in the megasonic emission device is conducted to the conductive nozzle through the chemical solution and discharged by the conductive nozzle. The conductive nozzle is configured as such. A substrate processing apparatus comprising the same.

24. The substrate processing apparatus according to claim 23, wherein The conductive nozzle is provided on one side of the megasonic emission device. The substrate processing apparatus.

25. The substrate processing apparatus according to claim 23 or 24, wherein The conductive nozzle has an inlet and a plurality of outlets. The inlet is provided at the upper part of the conductive nozzle, and the plurality of outlets are evenly dispersed and arranged at the lower part of the conductive nozzle. The substrate processing apparatus.

26. A substrate processing apparatus, comprising A chamber, A substrate tray for supporting a substrate, A megasonic emission device disposed in the chamber together with the substrate tray, the megasonic emission device being configured to transmit megasonic energy to a chemical solution between the megasonic emission device and the substrate. The megasonic emission device, A cleaning device for cleaning the megasonic emission device, A first ion rod disposed in the chamber, disposed between the substrate tray and the cleaning device, and having an upward air outlet. When the megasonic emission device passes above the first ion rod during the process of moving between the substrate tray and the cleaning device, in order to neutralize the charge accumulated in the megasonic emission device, the first ion rod is configured to blow ion wind toward the upper megasonic emission device through the air outlet. A substrate processing apparatus comprising the same.

27. A substrate processing apparatus, comprising A chamber, A substrate tray for supporting a substrate, A megasonic emission device disposed in the chamber together with the substrate tray, the megasonic emission device being configured to transmit megasonic energy to a chemical solution between the megasonic emission device and the substrate. The megasonic emission device, A second ion rod provided on the inner wall of the chamber. A drive device for rotationally driving the megasonic emission device so that the megasonic emission device rotates within the range where the ion wind of the second ion rod reaches, and A substrate processing apparatus comprising the same. **Claim 28** The substrate processing apparatus according to claim 27, wherein The substrate processing apparatus further comprises a first cantilever and a second cantilever, The first cantilever is installed above the megasonic emission device, the drive device is provided on the second cantilever, and the drive device rotates the megasonic emission device by driving the first cantilever so that the megasonic emission device rotates within the region where the ion wind of the second ion rod reaches. A substrate processing apparatus.

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