Process Chamber, Semiconductor Processing Equipment, and Process Method

Abstract

The present invention discloses a process chamber, a semiconductor process device, and a process method. The process chamber includes a chamber body, and an annular lining assembly is provided around the inner wall of the chamber body in the circumferential direction within the chamber body. A liftable deposition barrier ring is provided on the inner ring side of the lining assembly, and a liftable base for placing a wafer to be processed is provided within the chamber body. The lining assembly is provided with a first opening penetrating the side wall of the lining assembly, and the deposition barrier ring is provided with a second opening penetrating the side wall of the deposition barrier ring. The chamber body is provided with a heating lamp assembly facing the first opening. Thus, when the deposition barrier ring is in the first position, the second opening and the first opening are offset from each other, and when the deposition barrier ring is in the second position, the second opening and the first opening at least partially overlap, and the second position is higher than the first position.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process equipment, and more specifically, to a process chamber, semiconductor process equipment, and a process method.

Background Art

[0002] In the post-process of integrated circuit chip manufacturing, it is the most important technology to form metal interconnections using magnetron sputtering in physical vapor deposition (PVD). Metal wires are deposited by PVD in trenches and vias formed by photolithography technology to connect transistors to each other and form the required circuits. A complete metal interconnection process usually consists of barrier layer / seed layer deposition, copper plating, and chemical mechanical polishing (CMP). However, as the minimum processing dimension of the chip becomes smaller, both the openings of vias and trenches become smaller, while the aspect ratio becomes larger, which brings great difficulties to the deposition of the barrier layer / seed layer.

[0003] According to research, the reflow process is a technology capable of forming a highly reliable copper interconnection layer. First, a single layer of copper seed layer is deposited at a low temperature, and then the wafer is heated. Under the action of high temperature (usually 300 °C or higher), both the surface mobility of copper and the cohesive force of crystal grains are enhanced. Under the diffusion action and capillary force, the copper atoms on the surface move, and the deposited copper is sucked into the bottom of the deep hole and filled from bottom to top. Thus, one cycle of copper reflow is completed. The smaller the dimension of the deep hole, the stronger the capillary force and the better the filling effect. This cycle is repeated until the deep hole is completely filled.

[0004] The base used in conventional copper reflow equipment is a low-temperature electrostatic chuck (ESC). When performing a process, it is necessary to apply a DC voltage to the ESC, which adsorbs the wafer by electrostatic action and performs a deposition process. At the same time, by introducing a gas (back-blow gas) between the ESC and the wafer, the heat of the wafer is transferred to the ESC through the gas, realizing the function of wafer cooling.

[0005] Before performing the copper reflow process, first turn off the DC voltage applied to the ESC and wait for the adsorption force between the ESC and the wafer to disappear. This process is called desorption. Then, lower the ESC, raise the ejector pin, and raise the wafer to a position higher than the deposition process position. By lowering the ESC and raising the wafer, the distance between the wafer and the ESC can be increased, and the irradiation space of the heating lamp tube for the wafer can be obtained. After the wafer is raised to a high position, start the copper reflow process, that is, apply a very high power to the heating lamp tube, irradiate energy on the back surface of the wafer, and raise the temperature of the wafer. After the wafer completes the reflow process at a high temperature, raise the ESC again, lower the ejector pin, and let the wafer fall onto the surface of the ESC. Then, apply a DC voltage to the ESC again, adsorb the wafer, introduce back-blow gas for cooling, and then perform the second deposition process. After the deposition process is completed, perform the above desorption process again, raise the ejector pin, push up the wafer from the ESC, and carry the wafer out of the chamber.

[0006] In this process flow, there are two adsorption-desorption-push-up processes for the wafer. When the material on the back surface of the wafer is not silicon, for example, an insulating material with low conductivity such as silicon dioxide or silicon nitride, the charge release of the wafer becomes incomplete, residual charges generate an adsorption force, desorption becomes incomplete, and there is still a residual adsorption force between the wafer and the ESC. When the wafer is pushed up by the ejector pin, it will cause the wafer to shift. In some cases, if the residual adsorption force is too large, the ejector pin may damage the wafer.

Summary of the Invention

Problems to be Solved by the Invention

[0007] An object of the present invention is to provide a process chamber, a semiconductor process apparatus, and a process method that solve problems such as displacement, deformation, and breakage of a wafer to be processed due to multiple adsorption-desorption and heating in a copper reflow process flow.

Means for Solving the Problems

[0008] In a first aspect, the present invention includes a chamber body, an annular lining assembly is provided around the inner wall of the chamber body in the circumferential direction within the chamber body, a liftable deposition barrier ring is provided on the inner ring side of the lining assembly, a liftable base for placing a wafer to be processed is provided within the chamber body, a first opening penetrating the side wall of the lining assembly is provided in the lining assembly, a second opening penetrating the side wall of the deposition barrier ring is provided in the deposition barrier ring, a heating lamp assembly facing the first opening is provided in the chamber body, when the deposition barrier ring is in a first position, the second opening and the first opening are offset from each other, when the deposition barrier ring is in a second position, the second opening and the first opening at least partially overlap, and the second position is higher than the first position, and provides a process chamber for a semiconductor process apparatus.

[0009] Optionally, there are a plurality of the first openings, which are distributed at intervals in the circumferential direction of the lining assembly, the number of the second openings is the same as the number of the first openings, when the deposition barrier ring is in the first position, each of the second openings and each of the first openings correspond one-to-one and are offset from each other, when the deposition barrier ring is in the second position, each of the second openings and each of the first openings correspond one-to-one and at least partially overlap, the number of the heating lamp assemblies is the same as the number of the first openings, and each of the heating lamp assemblies faces each of the first openings in a one-to-one correspondence.

[0010] Optionally, when the base is in the first process position, the deposition barrier ring is in the first position, supported by the lining assembly, and when the base rises from the first process position to the second process position, the base can drive the deposition barrier ring to rise to the second position.

[0011] Optionally, an annular step is formed on the inner ring side of the lining assembly, a first overlap member and a second overlap member are respectively provided on the upper and bottom portions of the deposition barrier ring, and when the deposition barrier ring is in the first position, the deposition barrier ring overlaps with the annular step through the first overlap member, and when the base rises from the first process position to the second process position, the base can push up the deposition barrier ring through the second overlap member.

[0012] Optionally, the lining assembly includes a lower lining, the lower lining includes a first cylindrical side wall and a second cylindrical side wall provided coaxially, the second cylindrical side wall is located below the first cylindrical side wall, the first cylindrical side wall is connected to the side wall of the chamber body, the inner diameter of the second cylindrical side wall is smaller than the inner diameter of the first cylindrical side wall, the annular step is formed by connecting between the bottom of the first cylindrical side wall and the upper portion of the second cylindrical side wall, and a plurality of the first openings are provided on the second cylindrical side wall.

[0013] Optionally, a chamber body support member is provided on the upper portion of the side wall of the chamber body, a first annular flange extending horizontally is provided on the upper portion of the first cylindrical side wall, and the first cylindrical side wall overlaps with the chamber body support member through the first annular flange.

[0014] Optionally, the first overlap member is a second annular flange extending laterally outward from the upper portion of the deposition barrier ring.

[0015] Optionally, a third annular flange extending in a direction away from the inner wall of the chamber body is provided at the bottom of the second cylindrical side wall, and the end of the third annular flange has an annular flange portion extending upward. The second overlapping member includes an annular plate provided in the lateral direction, and an annular groove that overlaps and fits with the annular flange portion is provided on the lower surface of the annular plate.

[0016] Optionally, the heating lamp assembly includes an annular reflecting member and an annular heating lamp tube. The annular reflecting member is circumferentially provided on the inner wall of the chamber body in the circumferential direction of the chamber body. The inner side wall of the annular reflecting member is an arcuate reflecting surface facing the center of the chamber body, and the annular heating lamp tube is provided on the arcuate reflecting surface via a plurality of support members.

[0017] Optionally, the first cylindrical side wall and the second cylindrical side wall are integrally formed, and the annular step is formed by bending between the bottom of the first cylindrical side wall and the upper part of the second cylindrical side wall, or the first cylindrical side wall and the second cylindrical side wall are separate members, and two overlapping portions extending in the lateral direction that fit with each other are respectively provided at the bottom of the first cylindrical side wall and the upper part of the second cylindrical side wall, and the two overlapping portions form the annular step.

[0018] Optionally, the deposition barrier ring and the second overlapping member are integrally formed, or the deposition barrier ring and the second overlapping member are separate members, and a stepped overlapping portion that fits with the outer edge of the second overlapping member is provided at the bottom of the deposition barrier ring.

[0019] Optionally, both the first opening and the second opening are elongated through holes, and the distance between two adjacent first openings and the distance between two adjacent second openings are both 10 mm or more and 30 mm or less.

[0020] In a second aspect, the present invention provides a semiconductor processing apparatus including the process chamber described in the first aspect.

[0021] In a third aspect, the present invention provides a process method using the semiconductor processing apparatus according to the second aspect, the method including: controlling to raise a base on which a wafer to be processed is placed to a first process position and lower the deposition barrier ring to the first position; introducing back-blow gas between the base and the wafer to be processed and performing a first deposition process on the wafer to be processed; stopping the introduction of back-blow gas between the base and the wafer to be processed after completion of the first deposition process; controlling to raise the base to a second process position and raise the deposition barrier ring to the second position, irradiating and heating the wafer by the heating lamp assembly, and performing a reflow process; after completion of the reflow process, controlling to lower the base to the first process position and lower the deposition barrier ring to the first position, introducing back-blow gas between the base and the wafer again, and performing a second deposition process on the wafer; and stopping the introduction of back-blow gas between the base and the wafer after completion of the second deposition process.

Effect of the Invention

[0022] The beneficial effects of the present invention are as follows. The process chamber of the present invention is provided with a first opening and a second opening on the side walls of the lining assembly and the deposition barrier ring respectively, and a heating lamp assembly facing the first opening is provided in the chamber body. When the deposition barrier ring is in the first position, the second opening and the first opening are offset from each other. At this time, by performing a deposition process on the wafer to be processed on the base at the first process position, it can be ensured that the reactants in the deposition process do not deposit on the inner wall of the chamber. When the deposition barrier ring is in the second position higher than the first position, the second opening and the first opening at least partially overlap. At this time, the light of the heating lamp assembly is irradiated onto the wafer to be processed on the base at the second process position through the first opening and the second opening, heating the wafer and completing the copper reflow process. Compared with the prior art, the present invention does not require electrostatic desorption to detach the wafer to be processed from the base during the switching between the first process position for deposition and the second process position for copper reflow. Therefore, the risk of wafer slippage caused by the ejector pin pushing up the wafer and the problem of position drift caused by the lifting of the wafer can be effectively avoided, preventing the residual adsorption force caused by multiple adsorption-desorption, and further eliminating the risk of wafer slippage and wafer breakage.

[0023] The device of the present invention has other characteristics and advantages, which will become apparent from the drawings incorporated herein and the following specific embodiments, or are described in detail in the drawings incorporated herein and the following specific embodiments. Both these drawings and the specific embodiments are used to explain the specific principles of the present invention.

Brief Description of the Drawings

[0024] By referring to the drawings and describing the exemplary embodiments of the present invention in more detail, the above and other objects, features, and advantages of the present invention will become apparent. In the exemplary embodiments of the present invention, the same reference numerals generally represent the same members.

[0025]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Mode for Carrying Out the Invention

[0026] In the conventional copper reflow process, there is a process of wafer adsorption - desorption - pushing up - heating - dropping - adsorption - desorption - pushing up. In this flow, the process of wafer adsorption - desorption - pushing up occurs twice. When the material on the back surface of the wafer is not silicon, for example, an insulating material such as silicon dioxide or silicon nitride, there is a problem that desorption is incomplete. Due to incomplete desorption, there is a residual adsorption force between the wafer and the electrostatic chuck (ESC). When the wafer is pushed up by the ejector pin, it causes the wafer to shift. In some cases, if the residual adsorption force is too large, the ejector pin may damage the wafer.

[0027] In addition, there may be relatively large stress within the wafer, causing the wafer to bend and deform after heating (for example, the height difference becomes 1 mm or more), which similarly causes wafer displacement. Even if there is no displacement, there will be a problem that the contact area between the wafer and the ESC after dropping becomes small and re-adsorption cannot occur.

[0028] Similarly, in the entire flow, since there are two adsorption processes, it also leads to a significant increase in the residual adsorption force of the ESC, causing wafer displacement / damage. If the amount of wafer displacement is large, problems such as collision with the manipulator when the wafer is carried out of the chamber or being pinched and damaged by the isolation valve will occur when the wafer is carried out of the chamber.

[0029] The process chamber, semiconductor process equipment, and process method of the present invention can solve problems such as wafer displacement, deformation, and damage caused by multiple adsorption-desorption of the wafer and heating in the copper reflow process flow.

[0030] Hereinafter, the present invention will be described in more detail with reference to the drawings. Although preferred embodiments of the present invention are shown in the drawings, it should be understood that the present invention is not limited to the embodiments described herein and can be realized in various forms. On the contrary, these embodiments are provided to make the present invention more thorough and complete, and can fully convey the scope of the present invention to those skilled in the art.

[0031] Example 1 FIG. 1 shows a longitudinal sectional configuration diagram of a process chamber according to Example 1 of the present invention.

[0032] As shown in FIG. 1, the process chamber includes a chamber body. An annular lining assembly is provided around the inner wall of the chamber body in the circumferential direction within the chamber body. A liftable deposition barrier ring 214 is provided on the inner ring side of the lining assembly. A liftable base 202 for placing a wafer to be processed is provided within the chamber body. The lining assembly is provided with a first aperture 213 penetrating the side wall of the lining assembly. The deposition barrier ring 214 is provided with a second aperture 215 penetrating the side wall of the deposition barrier ring 214. A heating lamp assembly facing the first aperture 213 is provided on the chamber body. When the deposition barrier ring 214 is in the first position, the second aperture 215 and the first aperture 213 are offset from each other. When the deposition barrier ring 214 is in the second position, the second aperture 215 and the first aperture 213 at least partially overlap, and the second position is higher than the first position.

[0033] In some embodiments, in order to improve process uniformity by uniformly heating the wafer to be processed in the circumferential direction, there are a plurality of first apertures 213, which are distributed at intervals in the circumferential direction of the lining assembly. The number of the second apertures 215 is the same as the number of the first apertures 213. When the deposition barrier ring 214 is in the first position, each second aperture 215 and each first aperture 213 correspond to each other one-to-one and are offset from each other. When the deposition barrier ring 214 is in the second position, each second aperture 215 and each first aperture 213 correspond to each other one-to-one and at least partially overlap. The number of the heating lamp assemblies is the same as the number of the first apertures 213, and each heating lamp assembly faces each first aperture 213 one-to-one.

[0034] When the base 202 rises to the first process position, by positioning the deposition barrier ring 214 at the first position, the second aperture 215 and the first aperture 213 can be displaced from each other. When the base 202 rises to the second process position, by positioning the deposition barrier ring 214 at the second position, the second aperture 215 and the first aperture 213 can at least partially overlap. In some embodiments, when the base 202 is at the first process position, the deposition barrier ring 214 is at the first position and is supported by the lining assembly. When the base 202 rises from the first process position to the second process position, the base 202 can drive the deposition barrier ring 214 to rise to the second position. That is, the upward movement of the base 202 can drive the deposition barrier ring 214 to rise from the first position to the second position. When the base 202 performs a downward movement, the deposition barrier ring 214 can be driven by the base 202 to return to the first position. At this time, it is supported by the lining assembly, thereby realizing the switching of the deposition barrier ring 214 between the first position and the second position. There is no need to separately arrange a power source for the deposition barrier ring 214, the structure of the device is simplified, and the cost of the device is reduced. However, the embodiments of the present invention are not limited thereto. In actual applications, a power source may be separately arranged for the deposition barrier ring 214 to individually control the switching of the deposition barrier ring 214 between the first position and the second position. In this case, when the base 202 rises to the first process position, the deposition barrier ring 214 can be correspondingly controlled to move to the first position. When the base 202 rises to the second process position, the deposition barrier ring 214 can be correspondingly controlled to move to the second position.

[0035] Preferably, in this embodiment, when the base 202 rises to the second process position and the deposition barrier ring 214 is at the second position, the second aperture 215 and the first aperture 213 are completely overlapped in height. Both the first aperture 213 and the heating lamp assembly provided opposite thereto are located above the upper part of the base 202, and the light emitted by the heating lamp assembly is irradiated onto the upper surface of the wafer located on the base 202 through the first aperture 213 and the second aperture 215, so that the wafer can be heated.

[0036] In this embodiment, the chamber body includes a lower chamber body 201 and an upper chamber body 203. The lower chamber body 201 includes a bottom wall and an annular side wall. The base 202 includes an electrostatic chuck. Below the electrostatic chuck, a lifting mechanism penetrating the bottom wall of the lower chamber body 201 is provided. The lifting mechanism is used to lift and drive the electrostatic chuck so as to enable switching between the first process position and the second process position. The upper chamber body 203 is cylindrical, and the upper chamber body 203 and the lower chamber body 201 are coaxially provided. A ceramic ring 204 is provided above the upper chamber body 203. The ceramic ring 204 is used to arrange the target material 205, and the target material 205 can seal the cavity surrounded by the lower chamber body 201 and the upper chamber body 203. In actual applications, chamber bodies with other structures may be adopted, and the base 202 may also adopt a mechanical chuck or other chucks. In the embodiments of the present invention, this is not particularly limited.

[0037] In some embodiments, an annular step 217a is formed on the inner ring side of the lining assembly, and a first overlapping member 218a and a second overlapping member 218b are respectively provided on the upper and bottom portions of the deposition barrier ring 214. When the deposition barrier ring 214 is in the first position (the position shown in FIG. 1), the deposition barrier ring 214 is overlapped with the annular step 217a through the first overlapping member 218a. When the base 202 rises from the first process position to the second process position, the base 202 pushes up the deposition barrier ring 214 through the second overlapping member 218b, thereby driving the deposition barrier ring 214 to rise to the second position (the position shown in FIG. 5). When the base 202 descends from the second process position, the deposition barrier ring 214 is overlapped with the annular step 217a again through the first overlapping member 218a during the descent. At this time, the deposition barrier ring 214 is supported by the lining assembly and does not continue to descend together with the base 202.

[0038] In some embodiments, the first overlapping member 218a may be a second annular flange extending laterally outward from the upper portion of the deposition barrier ring 214, and the deposition barrier ring 214 is overlapped with the annular step 217a through the second annular flange.

[0039] In this embodiment, the lining assembly includes an upper lining 210 and a lower lining 212. The upper lining 210 is provided at the upper inner side of the chamber body, and the lower lining 212 is provided below the upper lining 210. In actual applications, the lining assembly may employ one lining. In this case, the lining may be provided to completely shield the inner side of the side wall of the upper chamber body 203, or the upper lining 210 and the lower lining 212 may be connected to form an integral structure, or other lining structures may be employed. In the embodiments of the present invention, this is not particularly limited.

[0040] In some embodiments, the lower lining 212 includes a first cylindrical side wall 216 and a second cylindrical side wall 217 provided coaxially. The second cylindrical side wall 217 is located below the first cylindrical side wall 216, and the first cylindrical side wall 216 is connected to the side wall of the chamber body. As a specific connection method, for example, a chamber body support member is provided at the upper part of the side wall of the chamber body. The chamber body support member includes, for example, a first annular step 203a formed at the upper part of the upper chamber body 203. A first annular flange 216a extending horizontally is provided at the upper part of the first cylindrical side wall 216, and the first cylindrical side wall 216 overlaps the chamber body support member (i.e., the first annular step 203a) via the first annular flange 216a. Optionally, the chamber body support member further includes an upper lining support ring 211 provided on the first annular step 203a, and the upper lining 210 is provided on the upper lining support ring 211. In actual applications, the first cylindrical side wall 216 and the side wall of the chamber body may adopt other connection methods, and in the embodiments of the present invention, this is not particularly limited.

[0041] In some embodiments, the inner diameter of the side wall of the second cylinder 217 is smaller than the inner diameter of the first cylindrical side wall 216. The annular step 217a is formed by connecting between the bottom of the first cylindrical side wall 216 and the upper part of the second cylindrical side wall 217, and a plurality of first openings 213 are provided on the side wall of the second cylinder 217.

[0042] In some embodiments, the first cylindrical side wall 216 and the second cylindrical side wall 217 are integrally formed. In this case, the annular step 217a is formed by bending between the bottom of the first cylindrical side wall 216 and the upper part of the second cylindrical side wall 217.

[0043] In some embodiments, the deposition barrier ring 214 and the second overlapping member 218b are integrally formed.

[0044] In some embodiments, an annular side wall 210a extending downward is provided at the bottom of the inner edge of the upper lining 210. The outer diameter of the annular side wall 210a is smaller than the inner diameter of the first cylindrical side wall 216. The lower end of the annular side wall 210a extends below the first annular flange 216a. The annular side wall 210a can shield the gap between the upper lining 210 and the lining support ring 211, and the gap between the lining support ring 211 and the lower lining 212.

[0045] In some embodiments, a second annular step 210b is provided at the outer edge of the upper part of the upper lining 210. The upper surface of the second annular step 210b is flush with the upper part of the upper chamber body 203. The ceramic ring 204 is provided on the upper part of the upper chamber body 203 and the second annular step 210b. That is, the second annular step 210b supports the ceramic ring 204 together with the upper part of the upper chamber body 203.

[0046] In some embodiments, a third annular flange 217b extending away from the inner wall of the chamber body is provided at the bottom of the second cylindrical side wall 217. The end of the third annular flange 217b has an annular flange portion 217c extending upward. The second overlapping member 218b includes an annular plate 218b1 provided in the horizontal direction. An annular groove 218b2 that overlaps and fits with the annular flange portion 217c is provided on the lower surface of the annular plate 218b1. When the deposition barrier ring 214 is supported by the lining assembly, the annular groove 218b2 and the annular flange portion 217c overlap and fit, which can improve the stability of the support of the deposition barrier ring 214 and can also exert a limiting effect on the deposition barrier ring 214.

[0047] In this embodiment, a third annular step 202a that overlaps and fits with the inner edge of the annular plate 218b1 is further provided at the upper edge of the base 202.

[0048] As shown in FIGS. 1 and 3, in this embodiment, the heating lamp assembly includes an annular reflecting member 223 and an annular heating lamp tube 220. The annular reflecting member 223 is peripherally provided on the inner wall of the chamber body along the circumferential direction of the chamber body. The inner wall of the annular reflecting member 223 is an arc-shaped reflecting surface facing the center of the chamber body. The annular heating lamp tube 220 is provided on the arc-shaped reflecting surface via a plurality of support members 221.

[0049] Specifically, the annular reflecting member 223 is an assembly surrounding the central axis of the chamber. The material is aluminum or stainless steel. It has an arc recessed toward the center of the chamber. When machining its inner surface, mirror polishing is performed to obtain a high reflectivity, so as to play a role in reflecting the light of the annular heating lamp tube 220 and reflect the light it emits to the central position of the process chamber.

[0050] The annular heating lamp tube 220 is an annular lamp tube surrounding the central axis of the chamber. The power of the annular heating lamp tube 220 is preferably 5 kW to 40 kW. The annular heating lamp tube 220 has a first power supply terminal 401 and a second power supply terminal 402. The power supply line 222 penetrates the side wall of the upper chamber body 203 and is connected to the first power supply terminal 401 and the second power supply terminal 402 to supply power to the annular heating lamp tube 220.

[0051] As shown in FIG. 2, in this embodiment, both the first opening 213 and the second opening 215 are elongated rectangular through-holes. The interval between two adjacent first openings 213 and the interval between two adjacent second openings 215 are both 10 mm or more and 30 mm or less.

[0052] Specifically, the two members of the lower lining 212 and the deposition barrier ring 214 adopt the same aperture method. In one example, four long rectangular apertures may be dug in the circumferential direction per turn on the side wall of the lower lining 212 or the deposition barrier ring 214. The height of the aperture is at least 20 millimeters, preferably 40 millimeters. In order for the light of the heating lamp tube to pass through, it is necessary to dig as many slits as possible in one turn in the direction surrounding the chamber, and only a narrow-width interval is left as a connection bridge for the upper and lower parts between adjacent apertures. To ensure sufficient strength of the member, at least three connection parts are required in the interval area between adjacent apertures, and there may be four, five, six, etc. The width of the connection part needs to be at least 10 mm to ensure sufficient strength, preferably 30 mm. The first aperture 213 and the second aperture 215 may overlap in the vertical direction or may be offset from each other. Since the interval connection part between adjacent apertures is sufficiently narrow and the lamp tube is of an enclosed type, the wafer can also be irradiated with light on the lamp tube parts on both sides of the connection part. When the area of the wafer irradiated with light is sufficiently large and the wafer is heated, a heat conduction process occurs inside it, and the entire wafer can be raised to a high temperature.

[0053] In other embodiments, as shown in FIG. 6, the first cylindrical side wall 216 and the second cylindrical side wall 217 may be separate members. On the bottom of the first cylindrical side wall 216 and the top of the second cylindrical side wall 217, two laterally extending overlapping portions that fit together are respectively provided, and the two overlapping portions form an annular step 217a. Specifically, the overlapping portion at the bottom of the first cylindrical side wall 216 is a fourth annular flange 216b that extends laterally along the direction away from the inner wall of the chamber body, and the overlapping portion at the top of the second cylindrical side wall 217 is a fifth annular flange 217d that extends laterally along the direction toward the inner wall of the chamber body. In one embodiment, the second cylindrical side wall 217 may be overlapped with the fourth annular flange 216b via the fifth annular flange 217d. At this time, the second overlapping member 218b is overlapped with the fifth annular flange 217d, thereby realizing the support for the deposition barrier ring 214. In another embodiment, as shown in FIG. 6, the second cylindrical side wall 217 may be overlapped with the upper part of the annular reflection assembly 223 via the fifth annular flange 217d, and the fourth annular flange 216b of the first cylindrical side wall 216 may be laminated above the fifth annular flange 217d. At this time, the second overlapping member 218b is overlapped with the fourth annular flange 216b, thereby realizing the support for the deposition barrier ring 214.

[0054] As shown in FIG. 7, the deposition barrier ring 214 and the second overlapping member 218b may be separate members. At the bottom of the deposition barrier ring 214, a stepped overlapping portion 214a that fits with the outer edge of the second overlapping member 218b is provided.

[0055] It should be noted that the process chamber of this embodiment further includes system components such as the same RF system and back-blow gas piping as the conventional copper reflow process chamber.

[0056] The operating principle of the process chamber of this embodiment is as follows.

[0057] As shown in FIG. 4, the base 202 rises to the first process position (deposition process position). At this time, the deposition barrier ring 214 is in the first position and is supported by the base 202. At this time, the first aperture 213 of the lower lining 212 and the second aperture 215 of the deposition barrier ring 214 are offset from each other in height, ensuring that the thin film deposited on the target material 205 does not deposit on the chamber wall during the deposition process. When performing the reflow process, as shown in FIG. 5, the base 202 continues to rise to the second process position (reflow process position), drives the deposition barrier ring 214 to rise to the second position. At this time, the first aperture 213 of the lower lining 212 and the second aperture 215 of the deposition barrier ring 214 are basically aligned in height. Thereby, the light emitted by the annular heating lamp tube 220 can pass through the first aperture 213 and the second aperture 215 under the action of the annular reflection assembly 223 and irradiate the wafer on the base 202, thereby performing irradiation heating on the wafer and realizing the reflow process.

[0058] Example 2 This example provides a semiconductor processing apparatus including the process chamber of Example 1.

[0059] By adopting the process chamber of Example 1, this semiconductor device can effectively avoid problems such as wafer displacement, deformation, and breakage caused by multiple adsorption-desorption and heating of the wafer in the reflow process flow.

[0060] Example 3 As shown in FIG. 8, it is a process method using the semiconductor processing apparatus of Example 2, and this method includes steps S1 to S6.

[0061] S1: Raise the base 202 on which the wafer to be processed is placed to the first process position, and control the deposition barrier ring 214 to descend to the first position.

[0062] S2: Introduce back-blow gas between the base 202 and the wafer to be processed, and perform the first deposition process on the wafer to be processed.

[0063] S3: After completing the first deposition process, stop introducing back-blow gas between the base 202 and the wafer to be processed.

[0064] S4: Raise the base 202 to the second process position, control the deposition barrier ring 214 to rise to the second position, perform irradiation heating on the wafer by the heating lamp assembly, and perform a reflow process.

[0065] S5: After completing the reflow process, lower the base 202 to the first process position, control the deposition barrier ring 214 to lower to the first position, introduce back-blow gas between the base 202 and the wafer again, and perform the second deposition process on the wafer.

[0066] S6: After completing the second deposition process, stop introducing back-blow gas between the base 202 and the wafer.

[0067] Taking the copper reflow process as an example, as shown in FIG. 9, the method of this embodiment specifically includes the following steps S101 to S113.

[0068] S101: Transport the wafer into the chamber.

[0069] S102: First, control the base 202 to rise to the first process position (at this time, the deposition barrier ring 214 descends to the first position).

[0070] S103: Control the electrostatic chuck on the base 202 to electrostatically adsorb the wafer, and introduce back-blow gas between the electrostatic chuck and the wafer.

[0071] S104: Start the first copper thin film deposition process. At this time, the wafer can be maintained at a low temperature during deposition by the heat conduction of the back-blow gas between the wafer and the electrostatic chuck.

[0072] S105: After the first deposition process is completed, turn off the back-blow gas. At this time, control the electrostatic chuck to maintain the electrostatic adsorption voltage, and keep the wafer firmly adsorbed on the surface of the electrostatic chuck. To turn off the back-blow gas, at this time, there is almost no heat conduction between the wafer and the electrostatic chuck, and the electrostatic chuck hardly has a cooling effect on the wafer.

[0073] S106: Control to raise the base 202 to the second process position (at this time, the deposition barrier ring 214 rises to the second position).

[0074] S107: Perform irradiation heating on the wafer by the heating lamp assembly to perform the copper reflow process.

[0075] When the base 202 raises the deposition barrier ring 214 to the second process position, the second aperture 215 of the deposition barrier ring 214 and the first aperture 213 of the lower lining 217 at least partially overlap in height, and the light of the annular heating lamp 200 irradiates the wafer through the first aperture 213 and the second aperture 215, and the wafer can be heated. Preferably, at this time, the light of the annular heating lamp can irradiate and heat the upper surface of the wafer to complete the copper reflow process.

[0076] S108: After completing the copper reflow process, introduce back-blow gas between the base 202 and the wafer again to cool the wafer.

[0077] S109: Control to lower the base 202 to the first process position (the order of step S108 and step S109 is interchangeable) (at this time, the deposition barrier ring 214 descends to the first position).

[0078] S110: Perform the second copper thin film deposition process.

[0079] S111: After the second deposition process is completed, stop introducing the back-blow gas between the base 202 and the wafer.

[0080] S112: Control the base 202 to stop the electrostatic adsorption of the wafer and complete the de-chuck.

[0081] S113: Finally, take out the wafer from the chamber and complete the copper reflow process.

[0082] The process method of this embodiment adopts the copper reflow process equipment of Embodiment 2, and the light of the annular heating lamp tube 220 can pass through the first aperture 213 and the second aperture 215 to irradiate the surface of the wafer (for example, irradiate from above the base 202 and the wafer downward). Therefore, it is not necessary to detach the wafer from the base 202 during the process, and no de-chuck step is required. Thus, it is possible to avoid the risk of residual adsorption force due to de-chucking and the risk of wafer slippage caused by the ejector pins pushing up the wafer. In the reflow process, since it is not necessary to detach the wafer from the base, the problem of position drift caused by the lifting and lowering of the wafer can be effectively prevented, the residual adsorption force caused by multiple adsorption-desorption processes can be prevented, and the risks of wafer slippage and wafer breakage can also be eliminated.

[0083] As described above, each embodiment of the present invention has been described. However, the above description is not exhaustive but exemplary and is not limited to the disclosed embodiments. It is obvious to those skilled in the art that many modifications and changes can be made without departing from the scope and spirit of the described embodiments.

Claims

1. It includes a chamber body, and an annular lining assembly is circumferentially provided inside the chamber body along the circumferential direction of the inner wall of the chamber body. A liftable deposition barrier ring is provided on the inner ring side of the lining assembly, and a liftable base for placing a wafer to be processed is provided inside the chamber body. The lining assembly is provided with a first opening penetrating the side wall of the lining assembly, the deposition barrier ring is provided with a second opening penetrating the side wall of the deposition barrier ring, and the chamber body is provided with a heating lamp assembly facing the first opening. When the deposition barrier ring is in the first position, the second opening and the first opening are offset from each other. When the deposition barrier ring is in the second position, the second opening and the first opening at least partially overlap, and the second position is higher than the first position. A process chamber for semiconductor processing equipment, characterized in that.

2. There are a plurality of the first openings, which are distributed at intervals in the circumferential direction of the lining assembly. The number of the second openings is the same as the number of the first openings. When the deposition barrier ring is in the first position, each of the second openings and each of the first openings correspond one-to-one and are offset from each other. When the deposition barrier ring is in the second position, each of the second openings and each of the first openings correspond one-to-one and at least partially overlap. The number of the heating lamp assemblies is the same as the number of the first openings, and each of the heating lamp assemblies corresponds one-to-one to each of the first openings and faces each other. The process chamber according to claim 1, characterized in that.

3. When the base is in the first process position, the deposition barrier ring is in the first position and is supported by the lining assembly. When the base rises from the first process position to the second process position, the base can drive the deposition barrier ring to rise to the second position. The process chamber according to claim 1 or 2, characterized in that.

4. An annular step is formed on the inner ring side of the lining assembly. A first overlap member and a second overlap member are respectively provided at the upper and lower portions of the deposition barrier ring. When the deposition barrier ring is in the first position, the deposition barrier ring overlaps the annular step via the first overlap member. The process chamber according to claim 3, characterized in that when the base rises from the first process position to the second process position, the base can push up the deposition barrier ring via the second overlap member.

5. The lining assembly includes a lower lining. The lower lining includes a first cylindrical side wall and a second cylindrical side wall provided coaxially. The second cylindrical side wall is located below the first cylindrical side wall. The first cylindrical side wall is connected to the side wall of the chamber body. The inner diameter of the second cylindrical side wall is smaller than that of the first cylindrical side wall. The annular step is formed by connecting between the bottom of the first cylindrical side wall and the upper part of the second cylindrical side wall. A plurality of the first openings are provided in the second cylindrical side wall. The process chamber according to claim 4 is characterized in that.

6. A chamber body support member is provided at the upper part of the side wall of the chamber body. A first annular flange extending horizontally is provided at the upper part of the first cylindrical side wall. The first cylindrical side wall overlaps the chamber body support member via the first annular flange. The process chamber according to claim 5 is characterized in that.

7. The first overlap member is a second annular flange extending laterally outward from the upper part of the deposition barrier ring. The process chamber according to claim 4 is characterized in that.

8. A third annular flange extending in a direction away from the inner wall of the chamber body is provided at the bottom of the second cylindrical side wall. The end of the third annular flange has an annular edge portion extending upward. The second overlap member includes an annular plate provided laterally. An annular groove that overlaps and fits with the annular edge portion is provided on the lower surface of the annular plate. The process chamber according to claim 5 is characterized in that.

9. The heating lamp assembly includes an annular reflecting member and an annular heating lamp tube. The annular reflecting member is provided around the inner wall of the chamber body in the circumferential direction of the chamber body. The inner side wall of the annular reflecting member is an arcuate reflecting surface facing the center of the chamber body. The process chamber according to claim 1, wherein the annular heating lamp tube is provided on the arcuate reflecting surface via a plurality of support members.

10. The first cylindrical side wall and the second cylindrical side wall are integrally formed, and the annular step is formed by bending between the bottom of the first cylindrical side wall and the upper part of the second cylindrical side wall, or The first cylindrical side wall and the second cylindrical side wall are separate members, and two laterally extending overlapping portions that fit with each other are respectively provided at the bottom of the first cylindrical side wall and the upper part of the second cylindrical side wall, and the two overlapping portions form the annular step. The process chamber according to claim 5.

11. The deposition barrier ring and the second overlapping member are integrally formed, or The deposition barrier ring and the second overlapping member are separate members, and a stepped overlapping portion that fits with the outer edge of the second overlapping member is provided at the bottom of the deposition barrier ring. The process chamber according to claim 4 or 8.

12. Both the first opening and the second opening are elongated through holes, and the intervals between two adjacent first openings and the intervals between two adjacent second openings are both 10 mm or more and 30 mm or less. The process chamber according to claim 1.

13. A semiconductor processing apparatus comprising the process chamber according to any one of claims 1 to 12.

14. Controlling to raise a base on which a wafer to be processed is placed to a first process position and lower the deposition barrier ring to the first position; Introducing a back-blow gas between the base and the wafer to be processed and performing a first deposition process on the wafer to be processed; After completing the first deposition process, stopping the introduction of the back-blow gas between the base and the wafer to be processed; Controlling to raise the base to a second process position and raise the deposition barrier ring to the second position, and performing irradiation heating on the wafer by the heating lamp assembly and performing a reflow process. After completing the reflow process, control the base to descend to the first process position and the deposition barrier ring to descend to the first position, introduce back-blow gas between the base and the wafer again, and perform a second deposition process on the wafer; After completing the second deposition process, stop introducing back-blow gas between the base and the wafer. The process method using the semiconductor process equipment according to claim 13, characterized by comprising the above steps.

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