Method, system, and apparatus for forming layers having a single crystalline structure

Abstract

Embodiments of the present disclosure generally relate to methods, systems, and apparatus for forming layers having a single-crystalline structure. In one implementation, a method for processing a substrate includes positioning the substrate in a processing space of a chamber and heating the substrate to a substrate temperature of 800°C or less. The method includes maintaining the processing space at a pressure within a range of 1.0 Torr to 8.0 Torr and flowing one or more silicon-containing gases and one or more dilution gases into the processing space. The method includes reacting the one or more silicon-containing gases to form one or more reactants and depositing the one or more reactants on an exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface. Each of the one or more silicon-containing layers has a single-crystalline structure.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to methods, systems, and apparatus for forming layers having a single crystalline structure. In one or more embodiments, the layers include one or more silicon (Si) layers and one or more silicon germanium (SiGe) layers. [Background technology]

[0002] In applications such as 3D DRAM, specific semiconductor characteristics may be required for performance. However, attempting to meet such characteristics may encounter several obstacles. For example, processing chambers may be expensive, complex, and time-consuming. For one, the chamber may use a large amount of power during processing (e.g., at relatively high temperatures) and may involve complex and expensive components. For another, the processing chamber may involve low throughput. Furthermore, modularity of each step may be limited in single-sided and double-sided deposition applications.

[0003] Therefore, there is a need for improved methods, systems, and apparatus that promote beneficial substrate properties while promoting one or more of reduced cost, reduced complexity, reduced process time, increased modularity, and increased throughput. Summary of the Invention

[0004] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to methods, systems, and apparatus for forming layers having a single crystalline structure. In one or more embodiments, the layers include one or more silicon (Si) layers and one or more silicon germanium (SiGe) layers.

[0005] In one or more embodiments, a method for processing a substrate includes positioning the substrate within a processing space of a chamber and heating the substrate to a substrate temperature of 800°C or less. The method includes maintaining the processing space at a pressure within a range of 1.0 Torr to 8.0 Torr and flowing one or more silicon-containing gases and one or more dilution gases into the processing space. The method includes reacting the one or more silicon-containing gases to form one or more reactants and depositing the one or more reactants on an exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface. Each of the one or more silicon-containing layers has a single crystal structure.

[0006] In one or more embodiments, a non-transitory computer-readable medium includes instructions that, when executed, cause a plurality of steps to be performed. The plurality of steps includes positioning a substrate within a processing space of a chamber and heating the substrate to a substrate temperature of 800° C. or less. The plurality of steps includes maintaining the processing space at a pressure within a range of 1.0 Torr to 8.0 Torr and flowing one or more silicon-containing gases and one or more dilution gases into the processing space. The plurality of steps includes reacting the one or more silicon-containing gases to form one or more reactants and depositing the one or more reactants on an exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface. Each of the one or more silicon-containing layers has a single crystal structure.

[0007] In one or more embodiments, a system for processing a substrate includes a chamber. The chamber includes one or more sidewalls at least partially defining a processing space, a substrate support positioned within the processing space, one or more heating elements embedded in the substrate support, and a lid defining a ceiling of the processing space. The lid includes one or more gas passages. The chamber includes a radio frequency (RF) power source electrically coupled to the chamber and a controller including instructions that, when executed by a processor, cause a plurality of steps to be performed. The plurality of steps includes positioning a substrate within the processing space of the chamber and heating the substrate to a substrate temperature within a range of 545°C to 555°C. The plurality of steps includes forming a plasma within the processing space and activating an exposed surface of the substrate using the plasma. The plurality of steps includes extinguishing the plasma, evacuating the processing space, maintaining the substrate at the substrate temperature, and maintaining the processing space at a pressure within a range of 5.8 Torr to 6.2 Torr. The plurality of steps includes flowing one or more silicon-containing gases and one or more dilution gases into the processing space through a ceiling of the processing space. The steps include reacting one or more silicon-containing gases to form one or more reactants and depositing the one or more reactants on the exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface, each of the one or more silicon-containing layers having a single crystalline structure, an abruptness of less than 1.0, and a surface roughness of less than 0.2 nm.

[0008] In order that the above-listed features of the present disclosure may be understood in detail, the present disclosure as outlined above may be described in more detail with reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments of the present disclosure and therefore should not be considered limiting in scope, as the present disclosure may admit of other equally effective implementations. [Brief explanation of the drawings]

[0009] [Figure 1]1 is a schematic top view of a system for processing a substrate according to one or more embodiments. [Figure 2] 1 is a schematic cross-sectional view of a processing chamber according to one or more embodiments. [Figure 3] 1 is a schematic cross-sectional view of a processing chamber according to one or more embodiments. [Figure 4] 1 is a schematic block diagram of a method for processing a substrate according to one or more embodiments. [Figure 5] 1 is a schematic cross-sectional view of a substrate and multiple layers formed on the substrate according to one or more embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0010] For ease of understanding, where possible, like reference numerals have been used to designate like elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without additional recitation.

[0011] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to methods, systems, and apparatus for forming layers having a single crystalline structure. In one or more embodiments, the layers include one or more silicon (Si) layers and one or more silicon germanium (SiGe) layers.

[0012] FIG. 1 is a schematic top view of a system 100 for processing substrates in accordance with one or more embodiments. The system 100 includes a cluster tool 180. The cluster tool 180 includes a factory interface 102 and one or more transfer chambers 108 (one shown) with a transfer robot 110 disposed therein. The cluster tool 180 includes one or more first chambers 124 (16 shown) and one or more second chambers 126 (four shown) mounted on a main frame 151 of a single cluster tool 180. One or more of the first chambers 124 are deposition chambers, such as chemical vapor deposition (CVD) chambers. One or more of the second chambers 126 are cleaning chambers. One or more of the second chambers 126 are pre-cleaning chambers (where cleaning occurs before deposition in the first chambers 124), and one or more of the second chambers 126 are post-cleaning chambers (where cleaning occurs after deposition in the first chambers 124). The chambers 124, 126 can all operate simultaneously to process substrates. The present disclosure contemplates that the first chamber 124 and the second chamber 126 may be on different mainframes such that there is a vacuum break during transfer between the first chamber 124 and the second chamber 126. The present disclosure contemplates that a vacuum break may also occur within a single cluster tool 180 during transfer of a substrate between the chambers. In one or more embodiments, the vacuum break lasts for a duration within a range of 4.0 minutes to 5.0 minutes, or less than 4.0 minutes.

[0013] In one or more embodiments, substrates in system 100 can be processed in and transferred between various chambers without being exposed to the ambient environment outside of cluster tool 180. In one or more embodiments, system 100 provides an integrated cluster tool 180 for performing processing steps on substrates.

[0014] 1 , the factory interface 102 includes a docking station 140 and a factory interface robot 142 that facilitate the transfer of substrates. The docking station 140 is configured to receive one or more front-opening unified pods (FOUPs) 149. In one or more embodiments, each factory interface robot 142 includes a blade 148 disposed at one end of the respective factory interface robot 142 that is configured to transfer substrates from the factory interface 102 to the load lock chambers 104, 106.

[0015] The load lock chambers 104, 106 have respective doors 150, 152 that interface with the factory interface 102 and respective doors 154, 156 that interface with the transfer chamber 108. The first and second chambers 124, 126 have respective doors that interface with the transfer chamber 108.

[0016] The doors can include slit openings with slit valves, for example, for passing substrates through by the transfer robot 110 and for providing a seal between the respective chambers that prevents gas from passing between the respective chambers. The doors can be open to transfer substrates therethrough and are otherwise closed.

[0017] The load lock chambers 104, 106, the transfer chamber 108, the first chamber 124, and the second chamber 126 may be fluidly connected to a gas and pressure control system. The gas and pressure control system may include one or more gas pumps (e.g., turbopumps, cryopumps, roughing pumps, vacuum pumps, etc.), gas sources, various valves, and conduits fluidly connected to the various chambers.

[0018] The system 100 includes a controller 190 configured to control the system 100 or its components. For example, the controller 190 may control the operation of the system 100 using direct control of the chambers 104, 106, 108, 124, 126 of the system 100 or by controlling other computers or controllers (e.g., sub-controllers) associated with the chambers 104, 106, 108, 124, 126. In one or more embodiments, the controller 190 is communicatively connected to a dedicated controller, with the controller 190 functioning as a central controller. The controller 190 is configured to control the gas and pressure control systems. During operation, the controller 190 enables data collection and feedback from each chamber and the gas and pressure control systems to regulate and control the performance of the system 100.

[0019] The controller 190 generally includes a central processing unit (CPU) 192, memory 194, and support circuits 196. The CPU 192 may be any form of general-purpose processor that can be used in industrial facilities to control various substrate processing chambers and equipment, as well as sub-processors thereon or therein. The memory 194, i.e., non-transitory computer-readable medium, is accessible by the CPU 192 and may be one or more of readily available memory, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), a floppy disk, a hard disk, a flash drive, or any other form of local or remote digital storage. The support circuits 196 are connected to the CPU 192 to support it and may include cache, clock circuits, input / output circuits and / or subsystems, power sources, etc.

[0020] The various methods (e.g., method 400) and operations disclosed herein may generally be implemented under the control of CPU 192 by CPU 192 executing computer instruction code stored in memory 194 (or in the memory of a particular processing chamber), e.g., as a software routine. When the computer instruction code (e.g., instructions) is executed by CPU 192, CPU 192 controls the chambers to perform processes according to the various methods and steps described herein. In one or more embodiments, memory 194 includes stored instructions that, when executed, cause the various apparatus and components (e.g., chambers 124, 126) described herein to be used to perform the methods (e.g., method 400) and steps (e.g., steps 401, 402, 404, 405, 406, 408, 410, 412, 414, 416, etc.) described herein. In one or more embodiments, the controller 190 is configured to use one or more machine learning and / or artificial intelligence algorithms to optimize one or more process parameters (such as the substrate temperature and / or pressure used in the chambers 124 and / or 126). The one or more machine learning and / or artificial intelligence algorithms may optimize the one or more process parameters in light of data collected from the system 100 (such as from the chambers 124 and / or 126) during processing of a substrate.

[0021] The various steps described herein (steps 401, 402, 404, 405, 406, 408, 410, 412, 414, 416 of method 400) may be performed automatically using controller 390, or may be performed automatically or manually with certain steps performed by a user.

[0022] Other processing systems with other configurations are contemplated. For example, more or fewer processing chambers (e.g., six first chambers 124) may be coupled to the transfer apparatus. In the implementation shown in FIG. 1 , the transfer apparatus includes transfer chamber 108. In other implementations, more or fewer chambers (e.g., two transfer chambers) may be implemented as the transfer apparatus in a system for processing substrates.

[0023] FIG. 2 is a schematic cross-sectional view of a processing chamber 200 according to one or more embodiments. The processing chamber 200 is a cleaning chamber, such as a pre-cleaning chamber. The processing chamber 200 may be used as one or more of the second chambers 126 shown in FIG. 1 . The processing chamber 200 can be configured to perform a thermal or plasma-based oxidation process and / or a plasma-assisted dry etching process. The processing chamber 200 includes a chamber body 212, a lid assembly 214, and a support assembly 216. The lid assembly 214 is disposed at an upper end of the chamber body 212, and the support assembly 216 is disposed at least partially within the chamber body 212. A vacuum system can be used to remove gases from the processing chamber 200. The vacuum system includes a vacuum pump 218 coupled to a vacuum port 221 disposed in the chamber body 212. The vacuum system can be part of the gas and pressure control system of FIG. 1 .

[0024] The lid assembly 214 includes at least two stacked components 222, 241, 242 (three are shown) configured to form a plasma space or cavity therebetween. A first electrode 220 is disposed vertically above a second electrode 222 to define the plasma space. The first electrode 220 is connected to a power source 224, such as a radio frequency (RF) power source, and the second electrode 222 is connected to ground or a power return, forming a capacitance between the first electrode 220 and the second electrode 222. The lid assembly 214 includes one or more gas inlets 226 for providing a cleaning gas to the substrate surface through a blocker plate 228 and a gas distribution plate 230. The cleaning gas may be an etchant or an ionized active radical, such as ionized fluorine, chlorine, or ammonia, and / or an oxidizer, such as ozone. The processing chamber 200 includes a controller 202 that controls the process in the processing chamber 200. Controller 202 may be part of (eg, integrated with) or in communication with controller 190 shown in FIG.

[0025] The support assembly 216 may include a substrate support 232 that supports the substrate 210 thereon during processing. The substrate support 232 may be coupled to an actuator 234 by a shaft 236 that extends through a centrally located opening formed in the bottom surface of the chamber body 212. The actuator 234 may be flexibly sealed to the chamber body 212 by a bellows (not shown) that prevents vacuum leakage around the shaft 236. The actuator 234 enables the substrate support 232 to move vertically within the chamber body 212 between a processing position and a lower transfer position. The transfer position is slightly below a slit valve opening 243 formed in a sidewall of the chamber body 212. A pumping ring 244 (which may include one or more pumping liners) is disposed within the first processing volume 211 of the processing chamber 200 to facilitate exhausting gases from the first processing volume 211.

[0026] The substrate support 232 has a flat or substantially flat surface for supporting a substrate 210 to be processed thereon. The substrate support 232 may be moved vertically within the chamber body 212 by an actuator 234 connected by a shaft 236. In operation, the substrate support 232 may be raised to a position adjacent to the lid assembly 214 to control the temperature of the substrate 210 being processed. As such, the substrate 210 may be heated via emitted radiation from the gas distribution plate 230 or via convection.

[0027] The processing chamber 200 is configured to perform a cleaning process on the substrate 210, for example, to remove native oxide from the substrate 210. The native oxide may include SiO2. The cleaning process is performed while maintaining the first processing space 211 of the processing chamber 200 at a cleaning pressure and cleaning temperature. The cleaning temperature is 1,000°C or less, such as 800°C or less. In one or more embodiments, the cleaning temperature is in the range of 15°C to 130°C, such as 20°C to 100°C. In one or more embodiments, the cleaning temperature is in the range of 0°C to 50°C, such as 20°C to 40°C. The cleaning pressure is less than 700 Torr, such as 600 Torr or less. In one or more embodiments, the cleaning pressure is in the range of 5 Torr to 600 Torr. In one or more embodiments, the cleaning pressure is in the range of 30 Torr to 80 Torr. In one or more embodiments, the cleaning pressure is 5 Torr, 300 Torr, or 600 Torr.

[0028] During the cleaning process, the substrate 210 can be exposed to the generated plasma. The plasma includes one or more of NH3 and / or NF3. The plasma can also include one or more inert gases, such as one or more of helium (He), nitrogen (N2), and / or argon (Ar). The plasma can be capacitively coupled or inductively coupled. The plasma can be supplied from a remote plasma source, or the plasma can be introduced into the processing chamber through a gas distribution plate, such as a showerhead. NH3 is injected directly into the chamber through a separate gas inlet. The cleaning process can include exposing the substrate 210 to a thermal combination of anhydrous HF and NH3, exposing the substrate 210 to aqueous HF, and a dry etching process (e.g., a remote plasma-assisted dry etching process) and / or a silicon etching process (e.g., an ICP H2 / Cl2 silicon etching). The dry etching process can include exposing the substrate 210 to NF3 and NH3 plasma byproducts.

[0029] The cleaning process can include a wet cleaning process. The substrate 210 may be cleaned using a wet cleaning process in which the substrate 210 is exposed to a cleaning solution, such as an HF-last type cleaning solution, an ozone water cleaning solution, a hydrofluoric acid (HF) and hydrogen peroxide (HO) solution, and / or other suitable cleaning solutions. The cleaning solution may be heated.

[0030] 3 is a schematic cross-sectional view of a processing chamber 300 according to one or more embodiments. Processing chamber 300 is a chemical vapor deposition (CVD) chamber in which a substrate is heated. Exemplary processing chambers that may benefit from implementations described herein include the PRODUCER® series of CVD-compatible chambers and / or the PRECISION® series of CVD-compatible chambers available from Applied Materials, Inc., Santa Clara, CA. It is contemplated that other process chambers from other manufacturers may also benefit from implementations described herein.

[0031] The processing chamber 300 includes a chamber body 302, a pedestal 304 disposed within the chamber body 302, and a lid assembly 306 coupled to the chamber body 302 and enclosing the pedestal 304 within a processing space 320. The lid assembly 306 includes a gas distributor 312. A substrate 307 is provided to the processing space 320 through an opening 326 (e.g., a slit valve) formed in the chamber body 302.

[0032] An insulator 310, which may be a dielectric material such as ceramic or a metal oxide, e.g., aluminum oxide and / or aluminum nitride, separates the gas distributor 312 from the chamber body 302. The gas distributor 312 includes openings 318 for admitting process gases into the processing space 320. The process gases may be supplied to the processing chamber 300 through conduits 314, and the process gases may enter a gas mixing region 316 before flowing through the openings 318. An exhaust 352 is formed in the chamber body 302 at a location below the pedestal 304. The exhaust 352 may be connected to a vacuum pump to remove unreacted species and by-products from the processing chamber 300. The conduits 314 are in fluid communication with one or more gas sources 319 that supply process gases. The process gases may include one or more of a reactive gas (e.g., for a deposition process), an inert gas (e.g., for a deposition process), a cleaning gas (e.g., for a chamber cleaning process), and / or a seasoning gas (e.g., for a seasoning process). Process gas (shown as P1 in FIG. 3) enters the processing space 320 through a ceiling 321 of the processing space 320. The ceiling 321 may be at least partially defined by the lower surface of the gas distributor 312.

[0033] The gas distributor 312 may be coupled to a power source 341, such as an RF generator or a DC power source. The DC power source may provide continuous and / or pulsed DC power to the gas distributor 312. The RF generator may provide continuous and / or pulsed RF power to the gas distributor 312. The power source 341 is turned on during operation to provide power to the gas distributor 312 to facilitate the formation of a plasma in the process space 320.

[0034] The pedestal 304 may be formed from a ceramic material, for example, a metal oxide or nitride or oxide / nitride mixture, such as aluminum, aluminum oxide, aluminum nitride, or an oxide / nitride mixture. The pedestal 304 is supported by a shaft 343. The pedestal 304 may be grounded. One or more heating elements 328 are embedded in the pedestal 304. In one or more embodiments, the one or more heating elements 328 (one is shown) are one or more resistive heaters. The heating elements 328 may be plates, perforated plates, meshes (such as wire mesh), wire screens, or any other distributed arrangement. The heating elements 328 are coupled to a power source 332 via a connection 330. The power source 332 may be a power source that controls the heating elements 328. The power source 332 supplies power (such as alternating current) to the heating elements 328 to generate heat. One or more cooling channels 380 may be formed in the pedestal 304 to cool the substrate 307. One or more cooling channels 380 receive a cooling fluid to cool the substrate 307 .

[0035] The pedestal 304 includes an electrode 336 and a power source 338 electrically coupled to the electrode 336. The electrode 336 may be a plate, a perforated plate, a mesh (such as a wire mesh), a wire screen, or any other distributed configuration. The power source 338 is configured to supply a chucking voltage and / or RF power to the electrode 336 through the electrode 336. Using the electrode 336, the pedestal 304 acts as an electrostatic chuck to chuck the substrate 307 thereto. Using the electrode 336, the power source 338 may be utilized to control the nature of the plasma formed in the processing space 320 or to facilitate the generation of the plasma in the processing space 320. For example, the power source 341 and the power source 338 may be tuned to two different frequencies to promote ionization of multiple species in the processing space 320. The power source 341 and the power source 332 may be utilized to generate a capacitively coupled plasma in the processing space 320. The present disclosure also contemplates that an inductively coupled plasma may be used.

[0036] The pedestal 304 includes a substrate support surface 342 that supports a substrate 307. The pedestal 304 may include a step 340 having a pocket 344. The step 340 may be an edge ring. The substrate 307 and the step 340 may be concentrically disposed on the substrate support surface 342 of the pedestal 304. The step 340 may be integrally formed with the pedestal 304.

[0037] The pedestal 304 can be at least a portion of a substrate support coupled to the shaft 343. The pedestal 304 can include a single support or can include multiple bodies, such as a top plate (support body) having a substrate support surface 342 attached to a base plate attached to the shaft 343.

[0038] The processing chamber may be used as one or more (such as all) of the first chambers 124 shown in FIG.

[0039] FIG. 4 is a schematic block diagram of a method 400 for processing a substrate according to one or more embodiments.

[0040] Optional step 401 includes cleaning the substrate in a cleaning chamber. The cleaning includes an etching step. The etching step includes one or more of dry etching (e.g., dry etching using NF3) and / or wet etching (e.g., wet etching using dilute hydrofluoric acid (DHF)). The etching step can include exposing the substrate to a plasma (e.g., from a remote plasma source).

[0041] Step 402 includes positioning a substrate within the processing space of the chamber. In one or more embodiments, the substrate is positioned within the processing space of the chamber after transferring the substrate out of the cleaning chamber. The substrate is a Si substrate.

[0042] The present disclosure contemplates that the wash chamber and / or one or more of the chambers can be seasoned prior to steps 401 and / or 402.

[0043] Step 404 includes heating the substrate to a substrate temperature of 800°C or less, such as 760°C or less. In one or more embodiments, the substrate temperature is less than 700°C, such as in the range of 450°C to 650°C. In one or more embodiments, the substrate temperature is 600°C or less. In one or more embodiments, the substrate temperature is about 550°C (e.g., 550°C, or in the range of 545°C to 555°C). In one or more embodiments, the heating occurs as part of the deposition step. In one or more embodiments, the heating occurs as part of a bake step that is performed before the deposition step. In one or more embodiments, the bake step is performed before the optional plasma treatment step of step 405. The bake step lasts for a bake duration of about 30 seconds.

[0044] Optional step 405 includes performing a plasma treatment step on the substrate. The plasma treatment step includes forming a plasma in the processing space and activating the exposed surface of the substrate using the plasma. The plasma treatment step includes extinguishing the plasma and evacuating the processing space. In one or more embodiments, the plasma is a hydrogen (H2) plasma. In one or more embodiments, the plasma is a capacitively coupled plasma generated in situ in the chamber using a high frequency radio frequency (HFRF) power source. In one or more embodiments, the plasma is generated by flowing H2 at a flow rate in the range of 0.1 SCCM to 1,000 SCCM and applying RF power having a power in the range of 0.1 W to 1,000 W. The plasma treatment step is performed at a plasma pressure. In one or more embodiments, the plasma pressure is in the range of 2.5 Torr to 5.0 Torr. In one or more embodiments, the plasma pressure is the same as the pressure used in step 408, described below. The plasma treatment step lasts for a treatment duration of approximately 60 seconds.

[0045] Step 406 includes maintaining the substrate at a substrate temperature.

[0046] Step 408 includes maintaining the process space at a pressure that is 300 Torr or less, such as in the range of 0.2 Torr to 300 Torr. In one or more embodiments, the pressure is in the range of 1.0 Torr to 8.0 Torr. In one or more embodiments, the pressure is about 1.0 Torr (such as in the range of 1.0 Torr, or 0.9 Torr to 1.1 Torr). In one or more embodiments, the pressure is about 6.0 Torr (such as in the range of 6.0 Torr, or 5.8 Torr to 6.2 Torr).

[0047] Step 410 includes flowing one or more silicon-containing gases and one or more dilution gases into the processing space through a ceiling of the processing space. In one or more embodiments, step 410 is performed after steps 402, 404, 405, 406, and 408 have been performed. The one or more silicon-containing gases include one or more of SiH, SiH, and / or SiHCl. The one or more dilution gases are inert gases and include one or more of nitrogen (N), argon (Ar), and / or helium (He). The one or more silicon-containing gases flow at a flow rate in the range of 0.1 SCCM to 1,000 SCCM.

[0048] In one or more embodiments, step 410 includes flowing one or more germanium-containing gases into the process space through the ceiling. In one or more embodiments, the one or more germanium-containing gases include one or more of GeH4 and / or GeF4. The one or more germanium-containing gases flow at a flow rate in the range of 0.1 SCCM to 1,000 SCCM.

[0049] Step 412 includes reacting one or more silicon-containing gases to form one or more reactants.

[0050] Step 414 includes depositing one or more reactants on the exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface. The one or more silicon-containing layers include one or more Si layers (which may include a dopant) and / or one or more SiGe layers (which may include a dopant). The SiGe layers have a Ge atomic percent ranging from 0.1% to less than 100%. The one or more silicon-containing layers each have a single-crystalline structure. In one or more embodiments, one or more silicon-containing gases react with the exposed surface of the substrate (step 412) to form one or more reactants. In one or more embodiments in which one or more germanium-containing gases are used, the one or more silicon-containing gases react with the one or more germanium-containing gases (step 412) to form one or more reactants.

[0051] Optional step 416 includes cleaning one or more components of the chamber after step 414 and after the substrate is removed from the chamber. In one or more embodiments, the cleaning includes flowing a plasma having NF into the processing space. The plasma can be generated by a remote plasma source and delivered to the processing space.

[0052] Steps 406, 408, 410, 412, and / or 414 can be part of a CVD process. The present disclosure contemplates that one or more steps of method 400 can be repeated, such as across several substrates and / or to form multiple layers on the same substrate. Method 400 can be used to form one or more layers on a single side of a substrate or on both sides of a substrate.

[0053] The present disclosure contemplates that there may be a vacuum break for the substrate at some point between step 401 (e.g., a pre-cleaning step) and steps 406, 408, 410, 412, and 414 (e.g., a CVD step). In such an embodiment, steps 404 and 405 may be used to mitigate environmental effects (such as oxidation) on the substrate. Steps 404 and 405 may be used in conjunction with other steps.

[0054] One or more exemplary implementations can be used according to the method 400. According to exemplary "Implementation 1," the pressure is approximately 6.0 Torr (e.g., 6.0 Torr, or in a range of 5.8 Torr to 6.2 Torr), and the substrate temperature is approximately 550°C (e.g., 550°C, or in a range of 545°C to 555°C). In Implementation 1, the one or more silicon-containing gases include SiH flowing into the processing space at a first flow rate in a range of 20 standard cubic centimeters per minute (SCCM) to 200 SCCM (e.g., approximately 200 SCCM), and the one or more dilution gases include nitrogen (N) flowing into the processing space at a second flow rate of approximately 600 SCCM. In Implementation 1, the one or more Si layers are formed on the substrate at a formation rate in a range of 10 nm / min to 12 nm / min. Implementation 1 can include a vacuum break of less than 4.5 minutes.

[0055] According to exemplary "Realization 2," the pressure is about 1.0 Torr (e.g., 1.0 Torr, or in a range of 0.9 Torr to 1.1 Torr), and the one or more silicon-containing gases include SiH flowing into the process space at a flow rate in a range of 20 SCCM to 200 SCCM. In Realization 2, one or more Si layers are formed on the substrate.

[0056] According to exemplary "Realization 3," the pressure is approximately 6.0 Torr (e.g., 6.0 Torr, or within a range of 5.8 Torr to 6.2 Torr), and the substrate temperature is approximately 550°C (e.g., 550°C, or within a range of 545°C to 555°C). In Realization 3, the one or more silicon-containing gases include Si2H6 flowing into the processing space at a first flow rate within a range of 20 SCCM to 200 SCCM, and the one or more dilution gases include nitrogen (N2) flowing into the processing space at a second flow rate of approximately 600 SCCM. In Realization 3, one or more germanium-containing gases are used, and the germanium-containing gas includes GeH4 carried by hydrogen (H2) flowing into the processing space at a third flow rate within a range of 10 SCCM to 1,000 SCCM (e.g., 200 SCCM to 1,000 SCCM). The GeH4 is approximately 10% of the third flow rate, and the hydrogen (H2) is approximately 90% of the third flow rate. In Realization 3, one or more SiGe layers are formed on a substrate. The SiGe layers have a Ga atomic percentage in the range of 5% to 60% and a Si atomic percentage in the range of 40% to 95%. Realization 3 can include a vacuum break of less than 4.0 minutes. In one or more embodiments of Realization 3, the first flow rate is about 200 SCCM, the third flow rate is about 200 SCCM, and the one or more SiGe layers are formed on the substrate at a formation rate of about 12 nm / min. In one or more embodiments of Realization 3, the first flow rate is about 20 SCCM, the third flow rate is about 1,000 SCCM, and the one or more SiGe layers are formed on the substrate at a formation rate of about 41 nm / min.

[0057] According to exemplary "Realization 4," the pressure is approximately 1.0 Torr (e.g., 1.0 Torr, or in a range of 0.9 Torr to 1.1 Torr), and one or more silicon-containing gases include Si2H6 flowing into the processing space at a flow rate in a range of 20 SCCM to 200 SCCM. In Realization 4, one or more germanium-containing gases are used, and the germanium-containing gas includes GeH4 carried by hydrogen (H2) flowing into the processing space at a second flow rate in a range of 10 SCCM to 1,000 SCCM (e.g., 200 SCCM to 1,000 SCCM). The GeH4 is approximately 10% of the second flow rate, and the hydrogen (H2) is approximately 90% of the second flow rate. The SiGe layer has a Ga atomic percentage in a range of 5% to 60% and a Si atomic percentage in a range of 40% to 95%.

[0058] 5 is a schematic cross-sectional view of a substrate 500 and multiple layers 510, 511 formed on the substrate 500, according to one or more embodiments. Layer 510 is a SiGe layer, and layer 511 is a Si layer. Substrate 500 and each of layers 510, 511 have a single crystal structure. Layers 510, 511 are formed on substrate 500 using method 400, such as by multiple repetitions of at least a portion of method 400. Substrate 500 with layers 510, 511 can be used in 3D DRAM applications.

[0059] The thickness T1 of the layers 510, 511 has a non-uniformity gradient across the layers 510, 511 that is less than 1.0%. The substrate 500 and the layers 511, 512 both have a haze that is less than 0.5%. The layers 510, 511 each have a steepness that is less than 1.0. The layers 510, 511 each have a surface roughness that is less than 0.2 nm.

[0060] A single crystal structure refers to a lattice structure that is completely crystalline and has the same lattice order end-to-end for each material. Every grain of material is aligned in the same direction in a single crystal structure. A single crystal structure does not contain any amorphous portions.

[0061] Benefits of the present disclosure include reduced cost, reduced power consumption, reduced process complexity, reduced component complexity, reduced process time, improved modularity (such as for use in both double-sided and single-sided deposition processes), and increased throughput. Benefits of the present disclosure also include reduced substrate haze, improved substrate-to-substrate uniformity, reduced chamber particle contamination (such as within the deposition chamber), and film non-uniformity of less than 1.0%.

[0062] It is believed that the steps and / or parameters described herein promote the above-mentioned benefits over other steps. As an example, the pressure and substrate temperature of method 400 promote the benefits. As another example, the steps and parameters described with respect to Example Implementation 1, Example Implementation 2, Example Implementation 3, and Example Implementation 4 promote the benefits.

[0063] It is contemplated that one or more aspects disclosed herein may be combined. By way of example, one or more aspects, features, components, steps, and / or properties of system 100, processing chamber 200, processing chamber 300, method 400, and / or substrate 500 and layers 511, 512 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the benefits described above.

[0064] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof. The present disclosure also contemplates that one or more aspects of the embodiments described herein may be substituted for one or more of the other aspects described. The scope of the present disclosure is determined by the following claims.

Claims

1. Positioning a substrate within a processing volume of a chamber; heating the substrate to a substrate temperature of 800° C. or less; maintaining the processing space at a pressure within a range of 1.0 Torr to 8.0 Torr; flowing one or more silicon-containing gases and one or more dilution gases into the processing space; reacting the one or more silicon-containing gases to form one or more reactants; depositing the one or more reactants on the exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface, each layer having a single crystal structure; A method for processing a substrate, comprising:

2. prior to said flow of said one or more silicon-containing gases; forming a plasma in the processing space; activating the exposed surface of the substrate using the plasma; The method of claim 1 further comprising:

3. The method of claim 2 , wherein the substrate is heated to the substrate temperature prior to the forming of the plasma.

4. The plasma is hydrogen (H ２ ) a plasma, and the method further comprises, prior to the flow of the one or more silicon-containing gases: extinguishing the plasma; and evacuating the processing space; The method of claim 3 further comprising:

5. 10. The method of claim 1, wherein the substrate temperature is between 450°C and 650°C.

6. 10. The method of claim 1, wherein the one or more silicon-containing gases react with the exposed surface of the substrate to form the one or more reactants, and wherein the one or more silicon-containing gases and the one or more dilution gases flow into the processing space through a ceiling of the processing space.

7. The one or more silicon-containing gases may be SiH ４ , Si ２ H ６ , or SiH ２ Cl ２ The method of claim 1 , comprising one or more of:

8. The pressure is about 6.0 Torr, the substrate temperature is about 550° C., and the one or more silicon-containing gases are flowed into the process space at a first flow rate in a range of 20 SCCM to 200 SCCM. ２ H ６ wherein the one or more dilution gases comprise nitrogen (N) flowing into the processing space at a second flow rate of about 600 SCCM. ２ 8. The method of claim 7, comprising:

9. The pressure is about 1.0 Torr, and the one or more silicon-containing gases are flowed into the processing space at a flow rate in the range of 20 SCCM to 200 SCCM. ２ H ６ The method of claim 7, comprising:

10. 8. The method of claim 7, further comprising flowing one or more germanium-containing gases into the processing space through the ceiling, wherein the one or more silicon-containing gases react with the one or more germanium-containing gases to form the one or more reactants.

11. The one or more germanium-containing gases are GeH ４ or GeF ４ The method of claim 10, comprising one or more of:

12. The pressure is about 6.0 Torr, the substrate temperature is about 550° C., and the one or more silicon-containing gases are flowed into the process space at a first flow rate in a range of 20 SCCM to 200 SCCM. ２ H ６ wherein the one or more dilution gases comprise nitrogen (N) flowing into the processing space at a second flow rate of about 600 SCCM. ２ ), wherein the one or more germanium-containing gases comprise hydrogen (H ２ ) and flowing into the processing space at a third flow rate ranging from 10 SCCM to 1,000 SCCM. ４ The method of claim 11 , comprising:

13. The GeH ４ is about 10% of the third flow rate, and the hydrogen (H ２ 13. The method of claim 12, wherein the third flow rate is about 90% of the third flow rate.

14. The pressure is about 1.0 Torr, and the one or more silicon-containing gases are flowed into the processing space at a first flow rate in a range of 20 SCCM to 200 SCCM. ２ H ６ wherein the one or more germanium-containing gases are hydrogen (H ２ ) and flowing into the processing space at a second flow rate in the range of 10 SCCM to 1,000 SCCM. ４ and the GeH ４ is about 10% of the second flow rate, and the hydrogen (H ２ 12. The method of claim 11, wherein the second flow rate is about 90% of the first flow rate.

15. A non-transitory computer-readable medium containing instructions that, when executed, cause a plurality of steps to be performed, the plurality of steps comprising: Positioning a substrate within a processing volume of a chamber; heating the substrate to a substrate temperature of 800° C. or less; maintaining the processing space at a pressure within a range of 1.0 Torr to 8.0 Torr; flowing one or more silicon-containing gases and one or more dilution gases into the processing space; reacting the one or more silicon-containing gases to form one or more reactants; depositing the one or more reactants on the exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface, each layer having a single crystal structure; 1. A non-transitory computer-readable medium comprising:

16. The one or more silicon-containing gases may be SiH ４ , Si ２ H ６ , or SiH ２ Cl ２ wherein the pressure is about 6.0 Torr, the substrate temperature is about 550° C., and the one or more silicon-containing gases are flowed into the processing space at a first flow rate in a range of 20 SCCM to 200 SCCM. ２ H ６ wherein the one or more dilution gases comprise nitrogen (N) flowing into the processing space at a second flow rate of about 600 SCCM. ２ 16. The non-transitory computer-readable medium of claim 15, comprising:

17. The one or more silicon-containing gases may be SiH ４ , Si ２ H ６ , or SiH ２ Cl ２ wherein the pressure is about 1.0 Torr and the one or more silicon-containing gases are flowed into the processing space at a first flow rate in a range of 20 SCCM to 200 SCCM. ２ H ６ 16. The non-transitory computer-readable medium of claim 15, comprising:

18. The plurality of steps and flowing one or more germanium-containing gases into the processing space through the ceiling, wherein the one or more silicon-containing gases react with the one or more germanium-containing gases to form the one or more reactants, the one or more silicon-containing gases comprising SiH ４ , Si ２ H ６ , or SiH ２ Cl ２ wherein the one or more germanium-containing gases include one or more of GeH ４ or GeF ４ wherein the pressure is about 6.0 Torr, the substrate temperature is about 550° C., and the one or more silicon-containing gases are flowed into the processing space at a first flow rate in a range of 20 SCCM to 200 SCCM. ２ H ６ wherein the one or more dilution gases comprise nitrogen (N) flowing into the processing space at a second flow rate of about 600 SCCM. ２ ), wherein the one or more germanium-containing gases comprise hydrogen (H ２ ) and flowing into the processing space at a third flow rate ranging from 10 SCCM to 1,000 SCCM. ４ Including, 16. The non-transitory computer-readable medium of claim 15.

19. The plurality of steps and flowing one or more germanium-containing gases into the processing space through the ceiling, wherein the one or more silicon-containing gases react with the one or more germanium-containing gases to form the one or more reactants, the one or more silicon-containing gases comprising SiH ４ , Si ２ H ６ , or SiH ２ Cl ２ wherein the one or more germanium-containing gases include one or more of GeH ４ or GeF ４ wherein the pressure is about 1.0 Torr and the one or more silicon-containing gases are flowed into the processing space at a first flow rate in a range of 20 SCCM to 200 SCCM. ２ H ６ wherein the one or more germanium-containing gases are hydrogen (H ２ ) and flowing into the processing space at a second flow rate in the range of 10 SCCM to 1,000 SCCM. ４ and the GeH ４ is about 10% of the second flow rate, and the hydrogen (H ２ ) is about 90% of the second flow rate; 16. The non-transitory computer-readable medium of claim 15.

20. 1. A substrate processing system comprising a chamber and a controller, The chamber one or more sidewalls at least partially defining a processing space; a substrate support positioned within the processing space; one or more heating elements embedded in the substrate support; a lid at least partially defining a ceiling of the processing space and including one or more gas passages; a radio frequency (RF) power source electrically coupled to the chamber; Equipped with The controller: instructions that, when executed by a processor, cause the processor to perform a plurality of steps; The plurality of steps Positioning a substrate within the processing volume of the chamber; heating the substrate to a substrate temperature in the range of 545°C to 555°C; forming a plasma in the processing space; activating the exposed surface of the substrate using the plasma; extinguishing the plasma; and evacuating the processing space; maintaining the substrate at the substrate temperature; maintaining the processing space at a pressure within a range of 5.8 Torr to 6.2 Torr; flowing one or more silicon-containing gases and one or more dilution gases into the processing space through the ceiling of the processing space; reacting the one or more silicon-containing gases to form one or more reactants; depositing the one or more reactants on the exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface; each of the one or more silicon-containing layers: A single crystal structure; a steepness of less than 1.0; Surface roughness of less than 0.2 nm A system having:

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