Evaporation mask for OLED pixel deposition

Abstract

The deposition mask according to the embodiment includes a metal plate including a deposition region and a non-deposition region, the deposition region including at least one effective portion, the effective portion including a plurality of unit through holes, the unit through holes including a small-surface hole formed on a first surface of the metal plate, a large-surface hole formed on a second surface of the metal plate, and a communicating portion communicating the small-surface hole and the large-surface hole, a rib is arranged between unit through holes adjacent to each other in a first direction of the metal plate, and an island portion is arranged between unit through holes adjacent to each other in a second direction of the metal plate, the island portion including a first island portion and a second island portion spaced apart from each other, the first island portion contacting the rib and the second island portion spaced apart from the rib.

Description

[Technical Field]

[0001] The examples relate to deposition masks for OLED pixel deposition. [Background technology]

[0002] Display devices are applied to a variety of devices. For example, the display devices are applied to small devices such as smartphones or tablet PCs. Alternatively, the display devices are applied to large devices such as televisions, monitors, or public displays (PDs). Recently, there has been an increasing demand for ultra-high resolution UHD (Ultra High Definition) with a resolution of 500 PPI (Pixels Per Inch) or more. As a result, display devices with high resolution are being applied to both small and large devices.

[0003] Display devices are classified into LCDs (Liquid Crystal Displays) and OLEDs (Organic Light Emitting Diodes) depending on their driving methods.

[0004] The LCD is a display device driven by liquid crystal, and the OLED is a display device driven by organic materials.

[0005] OLEDs can display an infinite contrast ratio, have a response speed about 1000 times faster than LCDs, and have a wide viewing angle, making them a promising display device that can replace LCDs.

[0006] The OLED includes a light-emitting layer. The light-emitting layer includes an organic material. The organic material is deposited on a substrate using a deposition mask. The deposition mask may include an open mask (OM) or a fine metal mask (FMM). A deposition pattern corresponding to the pattern formed on the deposition mask is formed on the substrate. As a result, the deposition pattern can function as a pixel.

[0007] The open mask is a thin plate that forms a deposition pattern only in specific locations when manufacturing an OLED. The open mask is used in the deposition process to form an emitting layer on a backplane after the backplane is completed during the display manufacturing process. That is, the open mask is a mask that does not have any hidden areas within the display operating range in order to deposit the front surface of the display. Therefore, the open mask is used when depositing an emitting layer with a single color emitting material.

[0008] On the other hand, a fine metal mask is used to change the color of a sub-pixel of an emitting layer. Therefore, the fine metal mask contains ultra-fine holes. The process using the fine metal mask requires a deposition process with several steps. Therefore, the process requires precise alignment. Therefore, the process using the fine metal mask is more difficult than the process using an open mask.

[0009] When the OLED light-emitting layer is deposited using an open mask, only one color light-emitting layer is formed. Therefore, a separate color filter (C / F) is required to realize various colors. On the other hand, when the fine metal mask is used, RGB light-emitting layers can be formed. Therefore, a separate color filter is not required. In other words, the technology using the fine metal mask is difficult. However, compared to the method using an open mask, light efficiency is good because a filter that blocks light is not required.

[0010] The fine metal mask is generally manufactured using an Invar alloy metal plate containing iron (Fe) and nickel (Ni). Through holes are formed on one side and the other side of the metal plate, penetrating the one side and the other side. The through holes are formed at positions corresponding to pixel patterns. This allows red, green, and blue organic materials to pass through the through holes in the metal plate and be deposited on the substrate. This allows pixel patterns to be formed on the substrate.

[0011] The fine metal mask includes a small-surface hole formed on one side of a metal plate and a large-surface hole formed on the other side of the metal plate, the small-surface hole and the large-surface hole being connected by a connecting portion, thereby forming the through hole.

[0012] The organic material is sprayed toward the fine metal mask, and is deposited on the deposition substrate through the large holes as an inlet and the small holes as an outlet.

[0013] The fine metal mask includes a plurality of through holes, and therefore, if the through holes are not uniform in shape or size, the deposition reliability of the mask may be reduced.

[0014] For example, the pixel pattern deposited on the deposition substrate may vary depending on the size or shape of the through-holes in the major and minor axis directions, which may reduce the deposition reliability of the fine metal mask.

[0015] Therefore, a deposition mask with a new structure and a manufacturing method thereof that can solve the above problems are required. Summary of the Invention [Problem to be solved by the invention]

[0016] The embodiments provide a deposition mask for OLED pixel deposition with improved deposition efficiency and deposition reliability. [Means for solving the problem]

[0017] The deposition mask according to the embodiment includes a metal plate including a deposition region and a non-deposition region, the deposition region including at least one effective portion, the effective portion including a plurality of unit through holes, the unit through holes including a small-surface hole formed on a first surface of the metal plate, a large-surface hole formed on a second surface of the metal plate, and a communicating portion communicating the small-surface hole and the large-surface hole, a rib is arranged between unit through holes adjacent to each other in a first direction of the metal plate, and an island portion is arranged between unit through holes adjacent to each other in a second direction of the metal plate, the island portion including a first island portion and a second island portion spaced apart from each other, the first island portion contacting the rib and the second island portion spaced apart from the rib. [Effects of the Invention]

[0018] The deposition mask according to the embodiment includes at least one second island portion.

[0019] The second island portion protrudes toward the connecting portion, and the shape and size of the unit through-hole are controlled by the second island portion.

[0020] Specifically, the second island portion reduces the deviation of the inclination angle of the inner surface of the large-surface hole and the deviation of the height of the small-surface hole, thereby making the thickness of the deposition pattern deposited through one unit through-hole uniform.

[0021] Furthermore, the thickness deviation of the deposition pattern deposited by the plurality of unit through-holes is reduced.

[0022] Furthermore, the uniformity of the size and / or shape of the plurality of unit through holes is improved, and therefore the size and / or shape of the deposition pattern formed by the plurality of unit through holes becomes uniform.

[0023] Therefore, the deposition mask according to the embodiment has improved deposition efficiency and deposition reliability.

[0024] In addition, at least one of the inclination angle of the inner surface of the large surface hole, the curvature of the inner surface of the large surface hole, the height of the large surface hole, and the height of the small surface hole may be controlled to various sizes in different regions.

[0025] Therefore, the deposition mask according to the embodiment can adjust the shapes or sizes of the large and small holes in various ways depending on the usage environment.

[0026] Therefore, the deposition mask according to the embodiment can have improved deposition efficiency. [Brief explanation of the drawings]

[0027] [Figure 1] 10A and 10B are diagrams illustrating a bonding between an evaporation mask and a frame according to an embodiment. [Figure 2] 1 is a cross-sectional view of an organic vapor deposition apparatus including a vapor deposition mask according to an embodiment. [Figure 3] FIG. 10 is a diagram showing a deposition pattern formed on a deposition substrate by through holes in the deposition mask according to the example. [Figure 4] FIG. 2 is a plan view of an evaporation mask according to an embodiment. [Figure 5] FIG. 2 is a plan view of an effective portion of the deposition mask according to the embodiment. [Figure 6] FIG. 6 is a cross-sectional view taken along the line AA′ in FIG. 5. [Figure 7] FIG. 6 is a cross-sectional view taken along the line BB′ in FIG. 5. [Figure 8] FIG. 6 is a cross-sectional view taken along the CC' region of FIG. 5. [Figure 9] FIG. 4 is an enlarged view of a unit through hole of the deposition mask according to the example. [Figure 10] 10A and 10B are diagrams for explaining the shape of a unit through hole of an evaporation mask according to an example. [Figure 11]10A and 10B are diagrams for explaining the shape of a unit through hole of an evaporation mask according to an example. [Figure 12] FIG. 6 is a cross-sectional view taken along the line DD′ of FIG. 5. [Figure 13] FIG. 6 is a cross-sectional view taken along the line EE′ of FIG. 5. [Figure 14] FIG. 6 is a cross-sectional view taken along the line FF' in FIG. 5. DETAILED DESCRIPTION OF THE INVENTION

[0028] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical concept of the present invention is not limited to some of the described embodiments, and may be embodied in various different forms, and one or more of the components of the embodiments may be selectively combined or substituted within the scope of the technical concept of the present invention. Furthermore, terms (including technical and scientific terms) used in the embodiments of the present invention may be interpreted as having meanings that are commonly understood by those skilled in the art to which the present invention belongs, unless otherwise clearly defined and described. Commonly used terms, such as predefined terms, may be interpreted in light of the context of the relevant art.

[0029] Furthermore, the terms used in the examples of the present invention are intended to describe the examples and do not limit the present invention. In this specification, the singular form can include the plural form unless otherwise specified in the phrase, and when referring to "A and (and) at least one (or more) of B and C," it can include one or more of all combinations that can be combined with A, B, and C.

[0030] Furthermore, in describing the components of the present invention, terms such as first, second, A, B, (a), (b), etc. are used merely to distinguish the component from other components, and the terms do not limit the essence, order, or sequence of the components.

[0031] Furthermore, when a component is described as being "coupled," "coupled," or "connected" to another component, it can include not only cases where the component is directly coupled, coupled, or connected to the other component, but also cases where the component is "coupled," "coupled," or "connected" by another component between the component and the other component.

[0032] Furthermore, when it is stated that a component is formed or disposed "above or below" each component, "above" or "below" includes not only the case where the two components are in direct contact with each other, but also the case where one or more other components are formed or disposed between the two components.

[0033] In addition, when expressed as "upper" or "lower," it can mean not only the upper direction but also the lower direction based on one component.

[0034] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, evaporation masks according to the embodiments will be described with reference to the drawings.

[0035] The deposition mask described below is a fine metal mask (FMM) that can form an RGB pixel pattern on a deposition substrate by depositing red, green, and blue organic materials on the deposition substrate. The following description does not apply to an open mask (OM).

[0036] 1 to 3 are diagrams illustrating a process of depositing an organic substance on a deposition substrate 300 using the deposition mask 100 according to the embodiment.

[0037] 1 and 2, the organic vapor deposition apparatus includes a deposition mask 100, a mask frame 200, a deposition substrate 300, an organic vapor deposition container 400, and a vacuum chamber 500.

[0038] The deposition mask 100 contains a metal. For example, the deposition mask contains iron (Fe) and nickel (Ni). More specifically, the deposition mask contains an Invar alloy containing iron (Fe) and nickel (Ni).

[0039] The deposition mask 100 includes a plurality of through holes TH. The through holes are arranged in an effective portion. The through holes are arranged to correspond to a pixel pattern to be formed on a deposition substrate. The deposition mask 100 includes an ineffective portion other than the effective portion including the deposition region.

[0040] The mask frame 200 includes openings 205. The through-holes are disposed in regions corresponding to the openings 205. Thus, the organic material supplied to the organic material deposition container 400 is deposited on the deposition substrate 300. The deposition mask 100 is disposed on and fixed to the mask frame 200. For example, the deposition mask 100 is stretched with a set tension. The deposition mask 100 is also welded and fixed to the mask frame 200.

[0041] For example, the ineffective portion of the deposition mask 100 is welded, so that the deposition mask 100 is fixed on the mask frame 200. Then, the portion of the mask frame 200 that protrudes outward is cut and removed.

[0042] The mask frame 200 comprises a highly rigid metal, which reduces deformation of the mask frame during the welding process.

[0043] The deposition substrate 300 is a substrate used when manufacturing a display device. For example, an OLED pixel pattern is formed on the deposition substrate 300. Red, green, and blue organic patterns are formed on the deposition substrate 300 to form pixels of the three primary colors of light. That is, an RGB pattern is formed on the deposition substrate 300.

[0044] The organic material deposition container 400 is a crucible. An organic material is placed inside the crucible. The organic material deposition container 400 moves within the vacuum chamber 500. That is, the organic material deposition container 400 moves in one direction within the vacuum chamber 500. For example, the organic material deposition container 400 moves in the width direction of the deposition mask 100 within the vacuum chamber 500.

[0045] A heat source and / or an electric current is supplied to the organic material deposition chamber 400, so that the organic material is deposited on the deposition substrate 300.

[0046] 3, the deposition mask 100 includes a metal plate 10. The metal plate includes a first surface 1S and a second surface 2S. The first surface 1S and the second surface 2S are opposite to each other.

[0047] The first surface 1S includes a small surface hole V1. The second surface 2S includes a large surface hole V2. For example, the first surface 1S and the second surface 2S are respectively formed with a plurality of small surface holes V1 and a plurality of large surface holes V2.

[0048] The deposition mask 100 also includes through holes TH. The through holes TH are formed by connecting portions CA that connect the boundaries of the small surface holes V1 and the large surface holes V2.

[0049] The width of the large-surface hole V2 is larger than the width of the small-surface hole V1. The width of the small-surface hole V1 is measured on a first surface 1S of the deposition mask 100. The width of the large-surface hole V2 is measured on a second surface 2S of the deposition mask 100.

[0050] Furthermore, the width of the connecting portion CA has a set size. Specifically, the width of the connecting portion CA may be 15 μm to 33 μm. More specifically, the width of the connecting portion CA may be 19 μm to 33 μm. Even more specifically, the width of the connecting portion CA may be 20 μm to 27 μm. If the width of the connecting portion CA exceeds 33 μm, it is difficult to achieve a resolution of 500 PPI or higher. Furthermore, if the width of the connecting portion CA is less than 15 μm, defects may occur during the deposition process.

[0051] The small facet holes V1 face the deposition substrate 300. The small facet holes V1 are disposed close to the deposition substrate 300. Therefore, the small facet holes V1 have a shape corresponding to the deposition pattern DP.

[0052] The large hole V2 faces the organic material deposition container 400. Therefore, the organic material supplied from the organic material deposition container 400 can be accommodated in a wide area by the large hole V2. Also, a fine pattern can be quickly formed on the deposition substrate 300 through the small hole V1.

[0053] As a result, the organic material accommodated in the large-surface hole V2 is deposited on the deposition substrate 300 through the small-surface hole V1. As a result, one of red, green, and blue pixel patterns is formed on the deposition substrate 300. Then, the above process is repeated. As a result, all of red, green, and blue pixel patterns are formed on the deposition substrate 300.

[0054] FIG. 4 is a plan view of an evaporation mask 100 according to an embodiment.

[0055] Referring to FIG. 4, the deposition mask 100 includes a deposition area DA and a non-deposition area NDA.

[0056] The deposition area DA is an area for forming a deposition pattern. The deposition area DA includes a patterned area and a non-patterned area. The patterned area is an area including the small surface holes V1, the large surface holes V2, the through holes TH, and the island portions IS. The non-patterned area is an area that does not include the small surface holes V1, the large surface holes V2, the through holes TH, and the island portions IS. The deposition area DA can be defined as the area from the first start point to the end point of the through holes or holes in the longitudinal direction of the deposition mask 100.

[0057] The deposition area DA includes a plurality of effective portions AA1, AA2, and AA3. The effective portions can form a plurality of deposition patterns. Specifically, the pattern area includes the plurality of effective portions AA1, AA2, and AA3.

[0058] The deposition area DA includes a plurality of isolation regions IA1 and IA2. The isolation regions IA1 and IA2 are disposed between adjacent effective portions. The isolation regions IA1 and IA2 are separation regions between the effective portions. The isolation regions IA1 and IA2 can distinguish adjacent effective portions from each other. Furthermore, one deposition mask 100 can support a plurality of effective portions.

[0059] The non-deposition area NDA is an area that is not involved in deposition. The non-deposition area NDA includes frame fixing areas FA1 and FA2. The frame fixing areas FA1 and FA2 are areas for fixing the deposition mask 100 to a mask frame 200. The non-deposition area NDA may also include half-etched portions HF1 and HF2 and open portions.

[0060] The half-etched portions HF1 and HF2 can disperse stress that occurs when the deposition mask 100 is pulled.

[0061] In addition, the open portions can disperse stress generated when the deposition mask 100 is pulled, thereby reducing deformation of the deposition mask.

[0062] As described above, the deposition mask 100 includes the through-holes, which are passages through which the organic material moves.

[0063] The through hole is formed by a small surface hole, a large surface hole, and a connecting portion. The metal plate includes a plurality of through holes. Specifically, the effective portion includes a plurality of through holes.

[0064] If the inner surface angles of the large holes in the major and minor axis directions, or the height or size of the small holes within a through hole are non-uniform, the amount of deposition material moving through the through hole may vary. Furthermore, the distance between the deposition mask and the deposition substrate may vary. This may result in non-uniform thickness of the deposition pattern.

[0065] Furthermore, if the shape and / or size of the through holes are non-uniform, the size or shape of the deposition pattern deposited on the deposition substrate may vary, which may reduce the deposition reliability of the deposition mask.

[0066] A deposition mask capable of solving the above-mentioned non-uniform deposition problem will be described below.

[0067] Hereinafter, deposition masks according to examples will be described with reference to FIGS.

[0068] 5 to 14, the deposition mask 100 includes a plurality of through holes. Specifically, the deposition mask 100 includes a plurality of unit through holes UTH. Each unit through hole UTH is formed by a small surface hole V1, a large surface hole V2, and a connecting portion CA.

[0069] Each unit through hole UTH has a first width W1 in a first direction 1D and a second width W2 in a second direction 2D. The first direction 1D and the second direction 2D may be the longitudinal direction or the width direction of the deposition mask 100. For example, the first direction 1D may be the longitudinal direction of the deposition mask 100. Furthermore, the second direction 2D may be the width direction of the deposition mask 100. Furthermore, the width size is defined as the width size of a large-area hole.

[0070] The first width W1 and the second width W2 are different from each other. For example, the first width W1 is greater than the second width W2. Thus, the unit through hole UTH has a long width in the first direction and a short width in the second direction.

[0071] However, embodiments are not limited thereto. The first width and the second width may be the same or similar in size.

[0072] A rib RB and an island portion IS are arranged between the plurality of unit through holes UTH. The rib RB is a region where the metal plate 10 is partially etched. The island portion IS is a region where the metal plate 10 is not etched.

[0073] 6 to 8, the island portion IS is one surface of the metal plate that is not etched. The rib RB is a side or surface region where two surfaces formed when the metal plate 10 is partially etched meet. For example, the rib RB may be a side or surface where the inner side surfaces ES of the through holes meet. The longitudinal direction of the rib RB may extend in the second direction.

[0074] The ribs RB are arranged between the unit through holes UTH adjacent in the first direction 1D, and the island portions IS are arranged between the unit through holes UTH adjacent in the second direction 2D.

[0075] The island portion IS includes a first island portion IS1, a second island portion IS2, and a third island portion IS3, which are connected to each other.

[0076] 5 to 8, the first island portion IS1 and the second island portion IS2 are spaced apart. The third island portion IS3 is connected to the first island portion IS1 and the second island portion IS2. As a result, the first island portion IS1 and the second island portion IS2 are connected by the third island portion IS3. That is, the first island portion IS1 and the second island portion IS2 do not contact each other. However, the first island portion IS1 and the second island portion IS2 are connected by the third island portion IS3.

[0077] The first island portion IS1 is disposed between the adjacent unit through holes UTH1 and UTH2. Specifically, the first island portion IS1 is disposed between the unit through holes UTH adjacent in the first direction 1D. The first island portion IS1 contacts the rib RB. For example, the rib RB connects adjacent first island portions IS1. As a result, one end of the first island portion IS1 is connected to the third island portion IS3 in the second direction 2D. In addition, the other end of the first island portion IS1 is connected to the rib RB.

[0078] The second island portion IS2 protrudes in the direction of the connecting portion CA of the unit through hole UTH. Specifically, the second island portion IS2 protrudes from the third island portion IS3 in the second direction 2D. The second island portion IS2 is spaced apart from the rib RB. That is, the second island portion IS2 does not contact the rib RB. The second island portion IS2 is connected to the third island portion IS3. The second island portion IS2 includes at least one island portion. For example, the second island portion IS2 includes a plurality of island portions.

[0079] The second island portion IS2 is connected to the inner side surface ES of the through hole. Accordingly, one end of the second island portion IS2 is connected to the third island portion IS3 in the second direction 2D. The other end of the second island portion IS2 is connected to the inner side surface ES of the through hole.

[0080] The third island portion IS3 is disposed between adjacent unit through holes UTH. Specifically, the third island portion IS3 is disposed between adjacent unit through holes UTH in the second direction 2D. The third island portion IS3 is spaced apart from the rib RB. That is, the third island portion IS3 does not contact the rib RB. The third island portion IS3 is connected to the first island portion IS1 and the second island portion IS2. Specifically, one end of the third island portion IS3 is connected to the first island portion IS1 and the second island portion IS2 in the second direction 2D. The other end of the third island portion IS3 is connected to the first island portion IS1 and the second island portion IS2.

[0081] 9, the unit through holes UTH1 and UTH2 are divided into a plurality of regions. Specifically, the unit through holes UTH1 and UTH2 are divided into a plurality of regions by the second island portion IS2.

[0082] For example, the unit through holes UTH1 and UTH2 include a first region 1A, a second region 2A, and a third region 3A. That is, the second island portion IS2 includes a plurality of second island portions. As a result, the unit through holes UTH1 and UTH2 are divided into a plurality of regions.

[0083] In the drawings, the two island portions IS2 include island portions 2-1, IS2-2, IS2-3, and IS2-4, and the unit through holes UTH1 and UTH2 include a first region 1A, a second region 2A, and a third region 3A. However, embodiments are not limited thereto. The second island portions may include less than four or more than four second island portions. The number of regions of the unit through holes UTH1 and UTH2 may vary.

[0084] The first region 1A is disposed in a central region of the unit through holes UTH1 and UTH2. The third region 3A is disposed in an outer region of the unit through holes UTH1 and UTH2. The second region 2A is disposed between the first region 1A and the third region 3A. As a result, two second regions 2A are disposed adjacent to the first region 1A in the first direction 1D. Two third regions 3A are disposed adjacent to the second region 2A in the first direction 1D.

[0085] The size of the unit through holes in each region is made uniform by the second island portion IS2. Also, the deviation of the plurality of unit through holes is reduced by the second island portion IS2. Also, the shape of the plurality of unit through holes is made uniform.

[0086] In detail, the deviations in the inclination angles of the inner surfaces of the large surface holes and the deviations in the heights of the small surface holes in the first to third regions are reduced by the second island portion IS2.

[0087] 10 and 11 are diagrams for explaining the deviation in the inclination angle of the inner surface of the large-surface hole and the deviation in the height of the small-surface hole that change due to the presence of the second island portion.

[0088] Referring to FIG. 10, when the second island portion is not included, the central portion of the unit through-hole is etched more than the outer portion.

[0089] Specifically, the degree of etching varies from region to region on the inner surface ES2 of the large-area hole V2. Specifically, when forming the through-hole, the etching solution may be concentrated in the central portion rather than the outer portion. As a result, the amount of etching in the central portion may be greater than the amount of etching in the outer portion.

[0090] Therefore, the inclination angle of the inner surface ES2 of the large-surface hole in the central region of the unit through hole becomes larger, and the height H of the inner surface ES1 of the small-surface hole becomes smaller. Therefore, the deviation of the inclination angle of the inner surface of the large-surface hole and the deviation of the height of the inner surface of the small-surface hole in the central region and the outer region of the through hole become larger.

[0091] Therefore, the deviation in the inclination angle and height between the central portion and the outer portion of the unit through hole ultimately manufactured increases. When the outer portion is controlled to have a height of 6 μm or less in order to control the height of the small facet hole to 6 μm or less, the height of the small facet hole in the central portion approaches zero. As a result, the deposition pattern deposited on the deposition substrate may be connected to the deposition material remaining on the deposition mask. Therefore, the deposition pattern may be peeled off when the deposition mask is removed. On the other hand, when the height of the small facet hole in the central portion is controlled to be 6 μm or less, the outer portion is formed to be 10 μm or more. As a result, the deposition pattern does not need to be deposited on the deposition substrate corresponding to the outer portion.

[0092] For example, the central portion may contain more deposition material, while the outer portion may contain less deposition material. Furthermore, the distance between the deposition mask and the deposition substrate may be closer in the central portion, while the distance between the deposition mask and the deposition substrate may be greater in the outer portion. This increases the deviation in thickness of the deposition pattern formed by the central portion and the outer portion of the unit through hole. This may reduce the deposition reliability of the deposition mask.

[0093] In addition, the thickness deviation of the deposition pattern formed by the plurality of unit through holes may increase, and the shape and / or size of the deposition pattern may become non-uniform, which may reduce the deposition reliability of the deposition mask.

[0094] 11, when the second island portion IS2 is included, the deviation of the unit through holes may be reduced, and the shape and / or size of the deposition pattern formed by the plurality of unit through holes may be made uniform.

[0095] In detail, the inner side surface ES2 of the large-surface hole V2 and the inner side surface ES1 of the small-surface hole V1 can be divided into a plurality of regions by the second island portion IS2.

[0096] The unit through-holes may be formed by etching the plurality of regions individually rather than simultaneously, thereby reducing the deviation in the inclination angle of the inner side surface ES2 of the large-surface hole V2 in each region of the unit through-hole, and also reducing the deviation in the height of the inner side surface ES1 of the small-surface hole V1.

[0097] This reduces the deviation in the inclination angle of the inner side surface ES2 of the large-surface hole V2 in the multiple regions of the unit through-hole, and also reduces the deviation in the height H of the inner side surface ES1 of the small-surface hole V1.

[0098] Preferably, the deviation of the inclination angle of the inner side surface ES2 of the large-area hole V2 in the region of the plurality of unit through holes may be 20° or less, 10° or less, 5° or less, and 2° or less. Also, the deviation of the height H of the inner side surface ES of the small-area hole V1 and / or the large-area hole V2 may be 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, and 1 μm or less.

[0099] Therefore, the deviation in the inclination angle of the inner side surface ES2 of the large-area hole V2 and the deviation in the height of the inner side surface ES1 of the small-area hole V1 are reduced in the central and outer portions of the final unit through hole. As a result, when a deposition pattern is formed using the unit through holes, the deviation in thickness between the central and outer portions of the unit through holes is reduced. Therefore, the deposition reliability of the deposition mask can be improved.

[0100] In addition, the thickness deviation of the deposition pattern formed by the plurality of unit through holes is reduced, and the shape and / or size of the deposition pattern is made uniform, thereby improving the deposition reliability of the deposition mask.

[0101] Meanwhile, the deposition mask 100 can form various shapes and sizes of the inner surfaces of the unit through holes depending on the second island portion. Specifically, the deposition mask 100 can form various sizes of the height of the inner surface of the small-surfaced hole V1 and the inclination angle of the inner surface of the large-surfaced hole V2 in each region.

[0102] 12 to 14 are cross-sectional views of the first to third regions of the unit through hole. The first region is the central region of the unit through hole with reference to the first direction. The third region is the outer region of the unit through hole. The second region is the region between the first region and the third region.

[0103] 12 to 14, the first region 1A of the large-surface hole includes a second-first inner surface ES2-1 in the first direction 1D, and the first region 1A of the small-surface hole includes a first-first inner surface ES1-1 in the first direction 1D.

[0104] The second-first inner surface ES2-1 has a curvature. The second-first inner surface ES2-1 has a first inclination angle θ1. The large-surface hole in the first region 1A has a second-first height H2-1. The small-surface hole in the first region 1A has a first-first height H1-1.

[0105] The second region 2A of the large-surface hole includes a second-second inner surface ES2-2 in the first direction 1D, and the second region 2A of the small-surface hole includes a first-second inner surface ES1-2 in the first direction 1D.

[0106] The second-2 inner surface ES2-2 has a curvature. The second-2 inner surface ES2-2 has a second inclination angle θ2. The large-surface hole in the second region 2A has a second-2 height H2-2. The small-surface hole in the second region 2A has a first-2 height H1-2.

[0107] The third region 3A of the large-surface hole includes a second-third inner surface ES2-3 in the first direction 1D, and the third region 3A of the small-surface hole includes a first-third inner surface ES1-3 in the first direction 1D.

[0108] The second-third inner surface ES2-3 has a curvature. The second-third inner surface ES2-3 has a third inclination angle θ3. The large-surface hole in the third region 3A has a second-third height H2-3. The small-surface hole in the third region 3A has a first-third height H1-3.

[0109] A virtual line can be defined connecting one end of the connecting portion CA and one end of the large-surface hole V2. The inclination angle of the large-surface hole V2 is the acute angle formed by the virtual line and an extension of the connecting portion CA. The height of the large-surface hole is the vertical height from the connecting portion CA to the island portion IS3. The height of the small-surface hole V1 is the vertical height from the connecting portion CA to the first surface. The curvature is defined as the reciprocal of the radius of curvature (μm).

[0110] The 2-1 inner side surface ES2-1, the 2-2 inner side surface ES2-2, and the 2-3 inner side surface ES2-3 may have different inclination angles. The 2-1 inner side surface ES2-1, the 2-2 inner side surface ES2-2, and the 2-3 inner side surface ES2-3 may have different curvatures. The 1-1 inner side surface ES1-1, the 1-2 inner side surface ES1-2, and the 1-3 inner side surface ES1-3 may have different heights.

[0111] 12 to 14, the third inclination angle θ3 may be greater than the first inclination angle θ1 and the second inclination angle θ2. Furthermore, the second inclination angle θ2 may be greater than the first inclination angle θ1. Thus, the inclination angle of the inner surface of the large-surface hole may decrease as it extends from the outer region to the central region.

[0112] The curvature of the 2-3 inner surface ES2-3 may be greater than the curvature of the 2-1 inner surface ES2-1 and the curvature of the 2-2 inner surface ES2-2. The curvature of the 2-2 inner surface ES2-2 may be greater than the curvature of the 2-1 inner surface ES2-1. As a result, the curvature of the inner surface of the large-surface hole may decrease as it extends from the outer region to the central region.

[0113] The height of the 1-1 inner surface ES1-1 may be greater than the height of the 1-2 inner surface ES1-2 and the height of the 1-3 inner surface ES1-3. The height of the 1-2 inner surface ES1-2 may be greater than the height of the 1-3 inner surface ES1-3. Thus, the height of the inner surface of the small facet hole may increase as it extends from the outer region to the central region.

[0114] However, the embodiment is not limited thereto, that is, the inclination angle, curvature, and height of the inner surface of the large surface hole and the height of the small surface hole may be formed variously depending on the region.

[0115] For example, the first inclination angle θ1 may be greater than the second inclination angle θ2 and the third inclination angle θ3. Furthermore, the second inclination angle θ2 may be greater than the third inclination angle θ3. As a result, the inclination angle of the inner surface of the large-surface hole may increase as it extends from the outer region to the central region.

[0116] The curvature of the 2-1 inner surface ES2-1 may be greater than the curvature of the 2-2 inner surface ES2-2 and the curvature of the 2-3 inner surface ES2-3. The curvature of the 2-2 inner surface ES2-2 may be greater than the curvature of the 2-3 inner surface ES2-3. As a result, the curvature of the inner surface of the large-surface hole may increase as it extends from the outer region to the central region.

[0117] The height of the 1-3 inner surface ES1-3 may be greater than the height of the 1-1 inner surface ES1-1 and the height of the 1-2 inner surface ES1-2. The height of the 1-2 inner surface ES1-2 may be greater than the height of the 1-1 inner surface ES1-1. Thus, the height of the inner surface of the small facet hole may decrease as it extends from the outer region to the central region.

[0118] Alternatively, the second inclination angle θ2 may be greater than the first inclination angle θ1 and the third inclination angle θ3. The first inclination angle θ1 and the third inclination angle θ3 may be the same. Alternatively, the first inclination angle θ1 and the third inclination angle θ3 may be different. For example, the first inclination angle θ1 may be greater than the third inclination angle θ3. Alternatively, the third inclination angle θ3 may be greater than the first inclination angle θ1. This allows the inclination angle of the inner surface of the large-surface hole to increase and decrease as it extends from the central region to the outer region.

[0119] Furthermore, the curvature of the 2-2 inner surface ES2-2 may be greater than the curvature of the 2-1 inner surface ES2-1 and the curvature of the 2-3 inner surface ES2-3. The curvature of the 2-1 inner surface ES1 and the curvature of the 2-3 inner surface ES2-3 may be the same. Alternatively, the curvature of the 2-1 inner surface ES2-1 and the curvature of the 2-3 inner surface ES2-3 may be different. For example, the curvature of the 2-1 inner surface ES2-1 may be greater than the curvature of the 2-3 inner surface ES2-3. Alternatively, the curvature of the 2-3 inner surface ES2-3 may be greater than the curvature of the 2-1 inner surface ES2-1. Thus, the curvature of the inner surface of the large-surface hole may increase and decrease as it extends from the central region to the outer region.

[0120] Furthermore, the height of the 1-2 inner surface ES1-2 may be smaller than the height of the 1-1 inner surface ES1-1 and the height of the 1-3 inner surface ES1-3. Furthermore, the height of the 1-1 inner surface ES1-1 and the height of the 1-3 inner surface ES1-3 may be the same. Alternatively, the height of the 1-1 inner surface ES1-1 and the height of the 1-3 inner surface ES1-3 may be different. For example, the height of the 1-1 inner surface ES1-1 may be greater than the height of the 1-3 inner surface ES1-3. Alternatively, the height of the 1-3 inner surface ES1-3 may be greater than the height of the 1-1 inner surface ES1-1. Thus, the height of the inner surface of the facet hole may increase and decrease as it extends from the central region to the outer region.

[0121] When the second island portion is not present, the inner surface of the large-surface hole may only be formed in a shape in which the inclination angle decreases and the curvature increases as the hole extends from the central region to the outer region by the etching process, and the small-surface hole may only be formed in a shape in which the height increases as the hole extends from the central region to the outer region.

[0122] However, in the deposition mask according to the embodiment, the degree of etching of the inner surface of the large-surface hole can be controlled for each region by the second island portion, and therefore, as described above, the inclination angle and curvature of the inner surface of the large-surface hole and the height of the small-surface hole can be varied.

[0123] Therefore, the inclination angle of the inner surface of the large surface hole, the curvature of the inner surface, the height of the large surface hole, and the height of the small surface hole can be formed in various ways depending on the positions of the large surface hole and the small surface hole based on the first direction.

[0124] Thus, at least one of the shape of the large surface holes, the size of the large surface holes, and the size of the small surface holes can be formed in various sizes or shapes depending on the environment in which the deposition mask is used.

[0125] For example, to reduce the deviation in height of the small holes, it is necessary to adjust the inclination angle of the inner surface of the large holes. In this case, the height of the small holes in the central region may be too low compared to the outer region, resulting in film peeling of the deposition pattern. In this case, the angle of the large holes in the central region may be reduced, thereby increasing the height of the small holes in the central region. Furthermore, depending on the conditions of the organic material deposition apparatus, less deposition material may be deposited in the outer region of the unit through holes, resulting in low light efficiency of the deposition pattern. In this case, the angle of the large holes in the outer region of the unit through holes may be increased, or the height of the small holes may be reduced. This increases the thickness of the deposition pattern deposited in the outer region, thereby improving the light efficiency of the deposition pattern. As a result, the deposition mask has improved deposition efficiency. Furthermore, the deposition reliability of the unit deposition region corresponding to the unit through holes may be improved.

[0126] The deposition mask according to the embodiment includes a plurality of second island portions.

[0127] The second island portion protrudes toward the connecting portion. The shape and size of the unit through holes are controlled by the second island portion. That is, the shape of the unit through holes can be made uniform for each region by the second island portion. In addition, the second island portion can reduce deviations in the inclination angle of the inner surface of the large-surface hole and the height deviation of the small-surface hole in the plurality of regions of the unit through holes. In addition, the shape and size of the plurality of unit through holes can be made uniform.

[0128] Therefore, the thickness uniformity of the deposition pattern formed by the unit through-hole can be improved, and the thickness and shape of the deposition pattern formed through a plurality of unit through-holes can be made uniform.

[0129] Therefore, the deposition mask according to the embodiment has improved deposition efficiency and deposition reliability.

[0130] The features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified in other embodiments by a person skilled in the art to which the embodiment belongs. Therefore, content related to such combinations and modifications should be interpreted as being included within the scope of the present invention.

[0131] Furthermore, while the above description has focused on the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art will recognize that various modifications and applications not exemplified above are possible within the scope of the essential characteristics of the present invention. For example, each component specifically illustrated in the embodiments can be modified and implemented. Differences related to such modifications and applications should be construed as being included within the scope of the present invention as defined by the appended claims.

Claims

1. a metal plate including a vapor-deposited area and a non-vapor-deposited area; the deposition region includes at least one effective portion; the effective portion includes a plurality of unit through holes, the unit through hole includes a small surface hole formed on a first surface of the metal plate, a large surface hole formed on a second surface of the metal plate, and a communication portion that communicates the small surface hole with the large surface hole, a rib is disposed between the unit through holes adjacent to each other in the first direction of the metal plate; an island portion is disposed between the unit through holes adjacent to each other in the second direction of the metal plate; the island portion includes a first island portion and a second island portion spaced apart from each other; the first island portion contacts the rib; The second island portion is spaced apart from the rib.

2. a third island portion connected to the first island portion and the second island portion, The deposition mask according to claim 1 , wherein the third island portion extends in the first direction.

3. The deposition mask according to claim 2 , wherein the second island portion protrudes from the third island portion toward the connecting portion.

4. One end of the first island portion is connected to the third island portion, and the other end is connected to the rib, The deposition mask of claim 1 , wherein one end of the second island portion is connected to the third island portion and the other end is connected to an inner surface of the unit through hole.

5. The deposition mask according to claim 1 , wherein the second island portion includes a plurality of island portions.

6. an inner surface of the large-surface hole includes a first region, a second region, and a third region separated by the second island portion; the first region is disposed in a central region of the inner surface of the large surface hole; the third region is disposed in an outer region of the inner surface of the large-surface hole, The evaporation mask according to claim 1 , wherein the second region is disposed between the first region and the third region.

7. The evaporation mask according to claim 6 , wherein the inclination angles of the inner surfaces of the large-surface holes in the first region, the second region, and the third region are different.

8. The deposition mask according to claim 6 , wherein the curvatures of the inner surfaces of the large-surface holes in the first region, the second region, and the third region are different.

9. The evaporation mask according to claim 6 , wherein the heights of the large holes in the first region, the second region, and the third region are different.

10. The evaporation mask according to claim 6 , wherein the heights of the facet holes in the first region, the second region, and the third region are different.

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