Transfer apparatus for transferring substrates, and related components and methods - Patents.com

Abstract

The present disclosure relates to a transfer apparatus for transferring substrates through substrate processing steps for semiconductor manufacturing, as well as related components and methods. In one implementation, a transfer apparatus for moving substrates through semiconductor manufacturing includes a body and a plurality of substrate supports at least partially inserted within the body. Each of the plurality of substrate supports includes an inner segment and one or more fins extending outwardly relative to the inner segment. Each of the inner segment and the one or more fins includes silicon carbide (SiC).

Description

[Background technology]

[0001] Technical Field FIELD OF THE DISCLOSURE

[0001] The present disclosure relates to transfer apparatus for transferring substrates with respect to substrate processing steps for semiconductor manufacturing, and related components and methods.

[0002] 2. Description of Related Art

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. Temperature differences between the substrate and the transfer components can disrupt the process. As one example, temperature differences can cause a reduction in heating power and / or processing temperature, which can lead to longer processing times and reduced throughput. As another example, temperature differences can cause thermal shock (which can cause the substrate to warp), which disrupts device performance and reduces throughput. As another example, temperature differences can affect deposition uniformity on the substrate, which disrupts device performance and reduces throughput.

[0003]

[0003] Such problems can be exacerbated by relatively complex deposition processes (eg, high temperature deposition processes).

[0004]

[0004] Therefore, there is a need for improved transfer devices and related components and methods that facilitate reduced thermal shock and increased throughput. Summary of the Invention

[0005]

[0005] The present disclosure relates to a transfer apparatus, and related components and methods, for transferring substrates through substrate processing steps for semiconductor manufacturing.

[0006] In one implementation, a transfer device for moving substrates for semiconductor manufacturing includes a body and a plurality of substrate supports at least partially inserted into the body, each of the plurality of substrate supports including an inner segment and one or more fins extending outwardly relative to the inner segment, each of the inner segment and the one or more fins including silicon carbide (SiC).

[0007] In one implementation, a transfer device for moving substrates for semiconductor manufacturing includes a body including a wrist and a plurality of arms defining a support surface, each of the plurality of arms having an arm thickness and formed from an arm material. The transfer device includes a plurality of substrate supports at least partially inserted into the support surface of the body. Each of the plurality of substrate supports is formed from a support material different from the arm material. Each of the plurality of substrate supports includes an inner segment and one or more fins extending outwardly relative to the inner segment. Each of the one or more fins has a fin thickness, the fin thickness being a thickness ratio of the arm thickness, the thickness ratio being less than or equal to 0.7.

[0008] In one implementation, a method for processing a substrate for semiconductor manufacturing includes heating a substrate disposed within a processing space of a processing chamber. The method also includes flowing one or more process gases over the substrate to form one or more layers on the substrate and moving a transfer apparatus into the processing space. The transfer apparatus includes a body and a plurality of substrate supports at least partially inserted into the body. Each of the plurality of substrate supports includes silicon carbide (SiC). The method also includes engaging the substrate with the plurality of substrate supports and moving the substrate out of the processing space while the substrate is supported by the plurality of substrate supports.

[0009]

[0009] So that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above will be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered as limiting the scope of the embodiments, as other equally effective embodiments may be tolerated. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic cross-sectional side view of a processing chamber according to one implementation. [Figure 2]

[0011] 1 is a schematic top view of a transfer apparatus for moving substrates for semiconductor manufacturing, according to one implementation. [Figure 3]

[0012] 3 is a schematic cross-sectional side view of a transfer device taken along section 3-3 shown in FIG. 2, according to one implementation. [Figure 4]

[0013] 1 is a schematic cross-sectional side view of a transfer device, according to one implementation. [Figure 5]

[0014] 5 is a schematic partial top view of the transfer device shown in FIG. 4, according to one implementation. [Figure 6]

[0015] 5 is a schematic partial top view of the transfer device shown in FIG. 4, according to one implementation. [Figure 7]

[0016] 1 is a schematic cross-sectional side view of a transfer device, according to one implementation. [Figure 8]

[0017] 8 is a schematic partial top view of the transfer device shown in FIG. 7, according to one implementation. [Figure 9]

[0018] 8 is a schematic partial top view of the transfer device shown in FIG. 7, according to one implementation. [Figure 10]

[0019] 8 is a schematic partial top view of the transfer device shown in FIG. 7, according to one implementation. [Figure 11]

[0020] 8 is a schematic partial top view of the transfer device shown in FIG. 7, according to one implementation. [Figure 12]

[0021] 12 is a schematic cross-sectional side view of the transfer device shown in FIGS. 7-11, according to one implementation. FIG. [Figure 13]

[0022] 1 is a schematic cross-sectional side view of a transfer device, according to one implementation. [Figure 14]

[0023] 14 is a schematic partial top view of the transfer device shown in FIG. 13, according to one implementation. [Figure 15]

[0024] 14 is a schematic partial top view of the transfer device shown in FIG. 13, according to one implementation. [Figure 16]

[0025] 14 is a schematic partial top view of the transfer device shown in FIG. 13, according to one implementation. [Figure 17]

[0026] 14 is a schematic partial top view of the transfer device shown in FIG. 13, according to one implementation. [Figure 18]

[0027] 1 is a schematic cross-sectional side view of a transfer device, according to one implementation. [Figure 19]

[0028] 1 is a schematic cross-sectional side view of a transfer device, according to one implementation. [Figure 20]

[0029] 1 is a schematic block diagram of a method for processing a substrate for semiconductor manufacturing, according to one implementation. [Figure 21]

[0030] 10A and 10B are schematic diagrams illustrating graphs of substrate temperature (in degrees Celsius) versus time (in seconds) for cooling profiles for multiple substrates, according to one implementation. DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0031] To facilitate understanding, the same reference numerals have been used, wherever possible, to designate identical elements that are common to several figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0012]

[0032] FIELD OF THE DISCLOSURE The present disclosure relates to a transfer apparatus, and related components and methods, for transferring substrates with respect to substrate processing steps for semiconductor manufacturing.

[0013]

[0033] 1 is a schematic cross-sectional side view of a processing chamber 100 according to one implementation. The processing chamber 100 is a deposition chamber. In one embodiment, which may be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is utilized to grow an epitaxial film on a substrate 102. The processing chamber 100 creates a cross-flow of precursors across a top surface 150 of the substrate 102.

[0014]

[0034] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), multiple upper heat sources 141, and multiple lower heat sources 143. As shown, a controller 120 is used to communicate with the processing chamber 100 and control processes and methods (e.g., steps of the methods described herein). The controller 120 and the processing chamber 100 can be part of a substrate processing system.

[0015]

[0035] 1, heat sources 141, 143 are lamps. Other heat sources are contemplated, such as resistive heaters, light emitting diodes (LEDs), and / or lasers.

[0016]

[0036] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 that supports the substrate 102. The upper heat sources 141 are disposed between the upper window 108 and the lid 154. The upper heat sources 141 form part of an upper heating module 155. The lid 154 may include sensors (such as pyrometers) disposed in or on the lid 154 to measure the temperature within the processing chamber 100. The lower heat sources 143 are disposed between the lower window 110 and the chamber floor 152. The lower heat sources 143 form part of the lower heating module 145. The upper window 108 is an upper dome and is at least partially formed of an energy-transparent material (such as quartz). The lower window 110 is a lower dome and is at least partially formed of an energy-transparent material (such as quartz).

[0017]

[0037] A process space 136 and a purge space 138 are disposed between the upper window 108 and the lower window 110. The process space 136 and the purge space 138 are part of an interior space defined at least in part by the upper window 108, the lower window 110, and one or more liners 163. The upper window 108 at least partially defines the process space 136.

[0018]

[0038] The window 108 includes a first surface 111 that is concave or flat (in the implementation shown in FIG. 1 , the first surface 111 is flat). The upper window 108 also includes a second surface 113 that is convex. The second surface 113 faces the substrate support 106. Other shapes of the upper window 108 are also contemplated in this disclosure. The upper window 108 includes an inner section 122 and an outer section 124. The first surface 111 and the second surface 113 are at least a portion of the inner section 122. The inner section 122 is transparent, and the outer section 124 is opaque. The outer section 124 is at least partially received within one or more sidewalls of the processing chamber 100 (e.g., in the flow module 112).

[0019]

[0039] Disposed within the interior space is a substrate support 106. The substrate support 106 includes an upper surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106 within the process space 136.

[0020]

[0040] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are sized to accommodate lift pins 132 for lifting the substrate 102 off the substrate support 106 either before or after a deposition process is performed. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from a process position to a transfer position. The lift pin stops 134 may be coupled to the second shaft 104.

[0021]

[0041] The flow module 112 includes multiple gas inlets 114, multiple purge gas inlets 164, and one or more gas outlets 116. The multiple gas inlets 114 and the multiple purge gas inlets 164 are positioned on the opposite side of the flow module 112 from the one or more gas outlets 116. One or more flow guides 117 are positioned below the multiple gas inlets 114 and the one or more gas outlets 116. The one or more flow guides may include, for example, one or more preheat rings. The one or more flow guides 117 are positioned above the purge gas inlets 164. One or more liners 163 are positioned on the inner surface of the flow module 112 to protect the flow module 112 from reactive gases used in the deposition and / or cleaning steps. The gas inlet(s) 114 and the purge gas inlet(s) 164 are each positioned to flow gas parallel to the top surface 150 of the substrate 102 disposed in the process space 136. The gas inlet(s) 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet(s) 164 are fluidly connected to one or more purge gas sources 162 and / or one or more cleaning gas sources 153. The one or more gas outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases supplied using the one or more process gas sources 151 may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N) and / or hydrogen (H)). The one or more purge gases supplied using the one or more purge gas sources 162 may include one or more inert gases (e.g., one or more of argon (Ar), helium (He), hydrogen (H), and / or nitrogen (N). The one or more cleaning gases supplied using the one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one embodiment, which may be combined with other embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH), and the one or more cleaning gases include hydrochloric acid (HCl).

[0022]

[0042] The one or more gas outlets 116 may further be connected to or may include an exhaust system 178. The exhaust system 178 fluidly connects the one or more gas outlets 116 to an exhaust pump 157. The exhaust system 178 may assist in controlling the deposition of layers on the substrate 102. The exhaust system 178 is located on an opposite side of the processing chamber 100 from the flow module 112.

[0023]

[0043] Controller 120 includes a central processing unit (CPU), memory containing instructions, and support circuitry for the CPU. Controller 120 controls various items directly or through other computers and / or controllers. In one or more embodiments, controller 120 is communicatively coupled to a dedicated controller and functions as a central controller.

[0024]

[0044] The controller 120 may be any form of general-purpose computer processor and associated or included sub-processors used in industrial environments to control various substrate processing chambers and equipment. The memory (or non-transitory computer-readable medium) may be one or more of readily available memory such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), synchronous dynamic RAM (e.g., SDRAM, such as DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage, local or remote. Support circuits of the controller 120 are coupled to the CPU (processor) to support the CPU. The support circuits may include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. The operating parameters (process gas pressure, process gas flow rate, and / or rotational position of the process kit) and steps are stored in memory as software routines that are executed or called to transform the controller 120 into a special-purpose controller for controlling the operation of the various chambers / modules described herein. The controller 120 is configured to perform all steps described herein. The instructions stored in memory, when executed, cause one or more steps (described below) of the method 2000 to be performed.

[0025]

[0045] The various steps described herein (such as the steps of method 2000) may be performed automatically using controller 120, or may be performed manually, such that certain steps are performed by a user.

[0026]

[0046] The controller 120 is configured to control the rotational position, heating, and gas flow through the processing chamber 100 by providing outputs for controlling the heat sources 141, 143, the gas flow, and the motion assembly 121. Such control includes control over the upper heat source 141, the lower heat source 143, the process gas source 151, the purge gas source 162, the motion assembly 121, and the exhaust pump 157.

[0027]

[0047] The controller 120 is configured to adjust the output to the controller based on the sensor readings, the system model, and the stored readings and calculations. The controller 120 includes built-in software and correction algorithm(s) for calibrating the measurements. The controller 120 may include one or more machine learning and / or artificial intelligence algorithms that estimate optimized parameters for the deposition, purging, and / or cleaning processes. The one or more machine learning and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate the optimized parameters. The algorithms may be unsupervised or supervised.

[0028]

[0048] Substrates (such as substrate 102) are transferred into and out of the interior space of processing chamber 100 through a transfer door 137 (such as a slit valve). When the transfer door 137 is open, a transfer apparatus (on which the substrate is supported) may extend through the transfer door 137 into the interior space so that lift pins 132 may lift the substrate from the transfer apparatus and land the substrate on the substrate support 106 for processing. After processing, the lift pins 132 may lift the substrate from the substrate support 106 and land the substrate on the transfer apparatus, which may retract through the open transfer door 137 and remove the substrate from processing chamber 100.

[0029]

[0049] FIG. 2 is a schematic top view of a transfer apparatus 200 for moving substrates 102 for semiconductor manufacturing, according to one implementation.

[0030]

[0050] FIG. 3 is a schematic cross-sectional side view of a transfer device 200 taken along section 3-3 shown in FIG. 2, according to one implementation.

[0031]

[0051] The transfer apparatus 200 includes a body 202 and a plurality of substrate supports 210 at least partially inserted into the body 202. In one or more embodiments, the body 202 is a blade, such as a robot blade, attached to a transfer robot in a transfer chamber. Each of the plurality of substrate supports 210 includes an inner segment 212 and one or more fins 214 extending outwardly relative to the inner segment 212. In the implementation shown in FIG. 2, the transfer apparatus 200 includes four substrate supports 210. Other numbers of substrate supports 210 are also contemplated.

[0032]

[0052] The body 202 includes a wrist portion 203 and a plurality of arms 204 that define a support surface 205. Each of the plurality of arms 204 is formed from an arm material. A substrate support 210 is at least partially inserted into the support surface 205 of the body 202. The wrist portion 203 includes a wrist ledge 206, each of the plurality of arms 204 includes an arm ledge 207, and each of the plurality of substrate supports 210 is disposed inwardly of the wrist ledge 206 and each arm ledge 207.

[0033]

[0053] The inner segment 212 and the one or more fins 214 each comprise silicon carbide (SiC). In one or more embodiments, the inner segment 212 and the one or more fins 214 are formed of SiC. In one or more examples, the inner segment 212 and the one or more fins 214 each have a composition of at least 95% silicon and carbon, by atomic percent. In one or more embodiments, the inner segment 212 and the one or more fins 214 each are formed of graphite coated with SiC. In one or more embodiments, each of the plurality of substrate supports 210 is formed of a support material that is different from the arm material. In one or more embodiments, the arm material comprises quartz (SiO2). In one or more embodiments, the arm material is transparent to at least 95% of light having wavelengths in the infrared (IR) range. In one or more embodiments, the support material has an absorptivity that absorbs at least 95% of light having wavelengths in the infrared (IR) range. In one or more embodiments, the support material has a thermal conductivity of at least 100 W / m·K. In one or more embodiments, the support material has an electrical resistivity of 1.0 megaohms or greater, such as 2.0 megaohms or greater.

[0034]

[0054] The substrate support 210 may be formed by machining a solid block of SiC. The substrate support 210 may be formed by injection molding graphite and coating the molded graphite with SiC. Other methods of forming the substrate support 210 are also contemplated.

[0035]

[0055] 3, the inner segment 212 is hemispherical (e.g., hemispherical or semi-oval) and cylindrical in shape, and each of the one or more fins 214 is cylindrical or rectangular in shape. In the implementation shown in FIG. 2, each of the one or more fins 214 is cylindrical in shape.

[0036]

[0056] Each of the plurality of arms 204 has an arm thickness AT1, and each of the one or more fins 214 has a fin thickness FT1, which is a thickness ratio of the arm thickness. In one or more embodiments, the thickness ratio is 0.7 or less. Each of the inner segments 212 includes a support portion 215 on a first side of the one or more fins 214. The support portion 215 extends beyond the support surface 205 by a gap G1. The gap G1 is a gap ratio of the arm thickness AT1. In one or more embodiments, the gap ratio is 0.3 or greater. The inner segment 212 of each substrate support 210 has a segment major dimension SD1, and each of the one or more fins 214 has a fin major dimension FD1. The fin major dimension FD1 is greater than the segment major dimension SD1. The fin major dimension FD1 is a dimension ratio of the arm thickness AT1. In one or more embodiments, the dimension ratio is 2.0 or greater. In one or more embodiments, the dimension ratio is 4.0 or greater. In one or more embodiments, the arm thickness AT1 is in the range of 2.5 mm-3.5 mm (e.g., 3.0 mm) and the fin thickness FT1 is 2.0 mm or less (e.g., in the range of 1.0 mm-2.0 mm). Other values ​​for the arm thickness AT1 and the fin thickness FT1 are also contemplated.

[0037]

[0057] Each of the inner segments 212 includes an insert portion 216 on a second side of the one or more fins 214. The insert portion 216 extends into a retention opening 209 formed in one of the arms 204. In the implementation shown in Figures 2 and 3, the insert portion 216 is cylindrical in shape, and the support portion 215 includes a cylindrical first section and a hemispherical (e.g., hemispherical or semi-ovular) second section that contacts and supports the substrate 102. In the implementation shown in Figures 2 and 3, the one or more fins 214 rest on the support surface 205 of the body 202.

[0038]

[0058] FIG. 4 is a schematic cross-sectional side view of a transfer device 400 according to one implementation.

[0039]

[0059] FIG. 5 is a schematic partial top view of the transfer device 400 shown in FIG. 4, according to one implementation.

[0040]

[0060] FIG. 6 is a schematic partial top view of the transfer device 400 shown in FIG. 4, according to one implementation.

[0041]

[0061] The transfer apparatus 400 includes a plurality of substrate supports 410 (one shown in FIG. 4 ), each of which may be similar to the substrate support 210 described above and may include one or more of the features, aspects, components, operations, and / or characteristics of the substrate support 210.

[0042]

[0062] Each substrate support 410 includes an inner segment 412 and one or more fins 414. Each inner segment 412 includes a support portion 415 on a first side of the one or more fins 414. Each inner segment 412 includes an insert portion 416 on a second side of the one or more fins 414. The insert portion 416 extends into a retention opening 409 formed in a recessed surface 420 of one of the arms 204.

[0043]

[0063] 4, inner segment 412 has a spherical shape (e.g., a spherical shape or an oval shape), and each of one or more fins 414 has a cylindrical or rectangular shape. Support portion 415 has a hemispherical shape (e.g., a hemispherical shape or a semi-oval shape), and insert portion 416 also has a hemispherical shape (e.g., a hemispherical shape or a semi-oval shape). In the implementation shown in FIG. 4, one or more fins 414 rest on a concave surface 420.

[0044]

[0064] In the implementation shown in FIG. 5, each of the one or more fins 414 is cylindrical in shape.

[0045]

[0065] In the implementation shown in FIG. 6, each of the one or more fins 414 is rectangular in shape.

[0046]

[0066] FIG. 7 is a schematic cross-sectional side view of a transfer device 700 according to one implementation.

[0047]

[0067] FIG. 8 is a schematic partial top view of the transfer device 700 shown in FIG. 7, according to one implementation.

[0048]

[0068] FIG. 9 is a schematic partial top view of the transfer device 700 shown in FIG. 7, according to one implementation.

[0049]

[0069] FIG. 10 is a schematic partial top view of the transfer device 700 shown in FIG. 7, according to one implementation.

[0050]

[0070] FIG. 11 is a schematic partial top view of the transfer device 700 shown in FIG. 7, according to one implementation.

[0051]

[0071] The transfer apparatus 700 includes multiple substrate supports 710 (one shown in FIG. 7 ), each of which may be similar to the substrate support 210 described above and may include one or more of the features, aspects, components, operations, and / or characteristics of the substrate support 210.

[0052]

[0072] Each substrate support 710 includes an inner segment 712 and one or more fins 714. Each inner segment 712 includes a support portion 715 on a first side of the one or more fins 714. Each inner segment 712 includes an insert portion 716 on a second side of the one or more fins 714. The insert portion 716 extends into a retention opening 709 formed in the recessed surface 420 of one of the arms 204.

[0053]

[0073] 7, the inner segment 712 is rectangular or cylindrical, and each of the one or more fins 714 is cylindrical or rectangular. The support portion 715 is cylindrical or rectangular, and the insert portion 716 is also cylindrical or rectangular.

[0054]

[0074] In the implementation shown in FIG. 8, the inner segment 712 is cylindrical, and each of the one or more fins 714 is also cylindrical.

[0055]

[0075] 9, the inner segment 712 is cylindrical and each of the one or more fins 714 is rectangular. As an example, each of the one or more fins 714 can be a rectangular block (e.g., a cube).

[0056]

[0076] In the implementation shown in FIG. 10, the inner segment 712 is rectangular and each of the one or more fins 714 is cylindrical.

[0057]

[0077] In the implementation shown in FIG. 11, the inner segment 712 is rectangular, and each of the one or more fins 714 is also rectangular.

[0058]

[0078] Figure 12 is a schematic cross-sectional side view of the transfer device 700 shown in Figures 7-11, according to one implementation. In the implementation shown in Figure 12, the inner segment 712 has a segment major dimension SD2 that is less than the height H1 of the inner segment 712. In the implementation shown in Figure 7, the segment major dimension SD2 is greater than the height H1. In one or more embodiments, each of the major dimensions SD1, SD2, FD1 is a diameter or a width.

[0059]

[0079] FIG. 13 is a schematic cross-sectional side view of a transfer device 1300, according to one implementation.

[0060]

[0080] FIG. 14 is a schematic partial top view of the transfer device 1300 shown in FIG. 13, according to one implementation.

[0061]

[0081] FIG. 15 is a schematic partial top view of the transfer device 1300 shown in FIG. 13, according to one implementation.

[0062]

[0082] FIG. 16 is a schematic partial top view of the transfer device 1300 shown in FIG. 13, according to one implementation.

[0063]

[0083] FIG. 17 is a schematic partial top view of the transfer device 1300 shown in FIG. 13, according to one implementation.

[0064]

[0084] The transfer apparatus 1300 includes a plurality of substrate supports 1310 (one shown in FIG. 13 ), each of which may be similar to the substrate support 210 described above and may include one or more of the features, aspects, components, operations, and / or characteristics of the substrate support 210.

[0065]

[0085] Each substrate support 1310 includes an inner segment 1312 and one or more fins 1314. Each inner segment 1312 includes a support portion 1315 on a first side of the one or more fins 1314. Each inner segment 1312 includes an insert portion 1316 on a second side of the one or more fins 1314. The insert portion 1316 extends into a retention opening 1309 formed in a recessed surface 420 of one of the arms 204.

[0066]

[0086] 13, the inner segment 1312 is hemispherical (e.g., hemispherical or semi-oval) and rectangular or cylindrical in shape. The one or more fins 1314 are each cylindrical or rectangular in shape. The support portion 1315 is hemispherical (e.g., hemispherical or semi-oval) in shape, and the insert portion 1316 is cylindrical or rectangular in shape.

[0067]

[0087] In the implementation shown in FIG. 14, the inner segment 1312 is cylindrical, and each of the one or more fins 1314 is also cylindrical.

[0068]

[0088] In the implementation shown in FIG. 15, the inner segment 1312 is cylindrical and each of the one or more fins 1314 is rectangular.

[0069]

[0089] In the implementation shown in FIG. 16, the inner segment 1312 is rectangular and each of the one or more fins 1314 is cylindrical.

[0070]

[0090] In the implementation shown in FIG. 17, the inner segment 1312 is rectangular, and each of the one or more fins 1314 is also rectangular.

[0071]

[0091] 18 is a schematic cross-sectional side view of a transfer device 1800, according to one implementation. Transfer device 1800 may be similar to transfer device 700 described above and may include one or more of the features, aspects, components, operations, and / or characteristics of transfer device 700.

[0072]

[0092] The transfer apparatus 1800 includes one or more heat transfer elements 1830 embedded in the inner segment 412 of at least one (e.g., each) of the plurality of substrate supports 410. Each heat transfer element 1830 is configured to heat and / or cool the respective substrate support 410, the substrate 102 supported thereon, and / or the body 202 (e.g., arm 204) using a source 1831 external to the respective substrate support 410. The source 1831 is fluidly and / or electrically connected to the heat transfer element 1830. The heat transfer element 1830 may include, for example, cooling channels (through which a fluid such as cooling water, air, or refrigerant flows) and / or electrical lines (through which electricity is conducted), thereby turning the substrate support 410 into a resistive heater. The heat transfer element 1830 may include an electrical coil or an electrical mesh. The cross section of the heat transfer element 1830 may be circular (as shown in FIG. 18 ) or rectangular. In one or more embodiments, the heat transfer element 1830 is disposed inside the one or more fins 414 and is at least partially disposed between the support portion 415 and the insertion portion 416. In one or more embodiments, the source 1831 is a battery attached to the body 202 (e.g., the arm 204). The present disclosure contemplates that the source 1831 may be external to the body 202. For example, the source 1831 may be a power source for a transfer robot. In one or more embodiments, the source 1831 is wirelessly charged and / or the one or more heat transfer elements 1830 are wirelessly powered.

[0073]

[0093] The heat transfer element 1830 may be used to preheat the substrate support 410 and the body 202 before contacting the substrate 102 and / or may be used to cool the substrate 102 while it is supported on the substrate support 410.

[0074]

[0094] 19 is a schematic cross-sectional side view of a transfer apparatus 1900 according to one implementation. The transfer apparatus 1900 may be similar to the transfer apparatus 700 described above and may include one or more of the features, aspects, components, operations, and / or characteristics of the transfer apparatus 700. The transfer apparatus 1900 includes one or more heat transfer elements 1930 embedded in the inner segment 412 of at least one (e.g., each) of the plurality of substrate supports 410. Each heat transfer element 1930 may be similar to the heat transfer element 1830 described above and may include one or more of the features, aspects, components, operations, and / or characteristics of the heat transfer element 1830.

[0075]

[0095] In the implementation shown in FIG. 19, the heat transfer element 1930 has a rectangular cross section.

[0076]

[0096] FIG. 20 is a schematic block diagram of a method 2000 of processing a substrate for semiconductor manufacturing, according to one implementation.

[0077]

[0097] A step 2002 of the method 2000 includes heating a substrate disposed within a processing space of a processing chamber.

[0078]

[0098] Step 2004 includes flowing one or more process gases over the substrate to form one or more layers on the substrate.

[0079]

[0099] Step 2006 includes moving a transfer device into the processing space, where the transfer device is a transfer device disclosed herein (such as transfer device 200 described above).

[0080]

[0100] Step 2008 includes engaging the substrate with a plurality of substrate supports (such as substrate support 210) of a transfer apparatus.

[0081]

[0101] Step 2010 includes moving the substrate out of the processing space while the substrate is supported on a plurality of substrate supports.

[0082]

[0102] Optional step 2012 includes heating or cooling the plurality of substrate supports using one or more heat transfer elements embedded within the plurality of substrate supports.

[0083]

[0103] An optional step 2014 of the method 2000 includes moving the second substrate into a processing space of the processing chamber while the second substrate is supported on a plurality of substrate supports of the transfer apparatus.

[0084]

[0104] Optional step 2016 includes removing the second substrate from the plurality of substrate supports.

[0085]

[0105] Optional step 2018 includes moving the transfer device out of the processing space.

[0086]

[0106] 21 is a schematic diagram 2100 of a graph showing substrate temperature (in degrees Celsius) versus time (in seconds) for cooling profiles 2101-2105 for multiple substrates, according to one implementation. The cooling profiles 2101-2105 correspond to different heating powers used in the process to heat the substrate, with the heating power increasing from the first profile 2101 to the fifth profile 2105. For example, the first profile 2101 has the lowest heating power, the fifth profile 2105 has the highest heating power, the second profile 2102 has a lower heating power than the third profile 2103, and the fourth profile 2104 has a higher heating power than the third profile 2103.

[0087]

[0107] As shown in graph 2100, the higher the process temperature (e.g., the temperature to which the substrate is heated), the longer it takes for the substrate to cool down to the target temperature after processing. As shown in graph 2100, the more heating power used in the process, the longer it takes for the substrate to cool down to the target temperature after processing. This "longer time" can mean that the process must wait longer for the substrate to cool down (which can result in increased downtime and reduced throughput), or that there is a greater temperature difference between the substrate and the transfer device when the substrate is loaded onto the transfer device for removal from the chamber. The greater the temperature difference between the substrate and the transfer device, the greater the likelihood of thermal shock to the substrate when it comes into contact with the transfer device, which can result in substrate failure (e.g., warping and / or breakage).

[0088]

[0108] The subject matter described herein facilitates the use of higher processing temperatures and / or greater heating power for processing substrates, while reducing or eliminating the possibility of thermal shock (and associated potential failures) (which in turn facilitates improved deposition uniformity and device performance, reduced processing time and downtime, and increased throughput). For example, heating temperatures of 600°C or greater (e.g., 1,000°C or greater) may be used. As an example, the substrate supports described herein (e.g., thickness ratios and / or size ratios) facilitate reducing the contact surface area between the substrate and the substrate support, while facilitating a larger substrate support area for the substrate support to absorb heat (e.g., from chamber components such as the substrate support 106) before contacting the substrate, thereby reducing temperature differentials.

[0089]

[0109] Advantages of the present disclosure include reducing or eliminating the possibility of thermal shock (and the associated possibility of defects such as warping and / or breakage), reducing the temperature difference between the substrate and the transfer device, accelerating the heating and / or cooling of the transfer device (e.g., reducing cool-down times), reducing or eliminating the possibility of substrate defects (such as scratches and / or particle buildup), higher processing temperatures, increased heating power, improved deposition uniformity and device performance, reduced processing times, delays, and downtime, and increased throughput.

[0090]

[0110] It is contemplated that one or more aspects disclosed herein may be combined. For example, one or more aspects, features, components, operations, and / or characteristics of various implementations of process chamber 100, controller 120, transfer device 200, transfer device 400, transfer device 700, transfer device 1300, transfer device 1800, transfer device 1900, method 2000, and / or graph 2100 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages discussed above.

[0091]

[0111] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A transfer apparatus for moving substrates in semiconductor manufacturing, comprising: The main body and a plurality of substrate supports at least partially inserted within the body; each of the plurality of substrate supports The medial segment and one or more fins extending outwardly relative to the inner segment; the inner segment and each of the one or more fins comprise silicon carbide (SiC); Transfer device.

2. The transfer device of claim 1 , wherein the body is a blade and the inner segment and each of the one or more fins are formed of SiC.

3. The transfer device of claim 1 , wherein the inner segment and each of the one or more fins are formed of graphite coated with SiC.

4. The transfer device of claim 1 , wherein the inner segment is spherical in shape and each of the one or more fins is cylindrical or rectangular in shape.

5. The transfer device of claim 1 , wherein the inner segment is rectangular in shape and each of the one or more fins is cylindrical or rectangular in shape.

6. The transfer device of claim 1 , wherein the inner segment is cylindrical in shape and each of the one or more fins is cylindrical or rectangular in shape.

7. The transfer device of claim 1 , wherein the inner segment is hemispherical and cylindrical in shape, and each of the one or more fins is cylindrical or rectangular in shape.

8. The transfer apparatus of claim 1 , further comprising one or more heat transfer elements embedded in the inner segment of at least one of the plurality of substrate supports.

9. 1. A transfer apparatus for moving substrates in semiconductor manufacturing, comprising: a body, the body comprising: The list section and a plurality of arms defining a support surface, each of the plurality of arms having an arm thickness and formed of an arm material, the transfer device further comprising: a plurality of substrate supports at least partially inserted into the support surface of the body, each of the plurality of substrate supports being formed of a support material different from the arm material, and each of the plurality of substrate supports comprising: The medial segment and one or more fins extending outwardly relative to the inner segment, each of the one or more fins having a fin thickness, the fin thickness being a thickness ratio of the arm thickness, the thickness ratio being less than or equal to 0.

7. Transfer device.

10. The support material comprises silicon carbide (SiC) and the arm material comprises quartz (SiO ２ 10. The transfer device of claim 9, comprising:

11. The transfer apparatus of claim 9 , wherein the wrist comprises a wrist ledge, each of the plurality of arms comprises an arm ledge, and each of the plurality of substrate supports is positioned inwardly of the wrist ledge and each arm ledge.

12. The inner segment: a support portion on a first side of the one or more fins, the support portion extending beyond the support surface; and an insert portion on a second side of the one or more fins, the insert portion extending into a retention opening formed in one of the arms.

13. 13. The transfer device of claim 12, wherein the support portion extends beyond the support surface by a gap, the gap being a gap ratio of the arm thickness, the gap ratio being 0.3 or greater.

14. The transfer device of claim 9 , wherein the inner segment has a segment major dimension and the one or more fins each have a fin major dimension, the fin major dimension being greater than the segment major dimension.

15. 15. The transfer device of claim 14, wherein the fin major dimension is a ratio of the arm thickness, the ratio being 2.0 or greater.

16. 16. The transfer device of claim 15, wherein the dimensional ratio is 4.0 or greater.

17. 10. The transfer device of claim 9, wherein the support material has a thermal conductivity of at least 100 W / m·K.

18. 20. The transfer device of claim 17, wherein the support material has an absorptivity of at least 95% of light having wavelengths in the infrared (IR) range.

19. 1. A method of processing a substrate for semiconductor manufacturing, comprising: heating a substrate disposed within a processing space of the processing chamber; flowing one or more process gases over the substrate to form one or more layers on the substrate; moving a transfer device into the processing space; and the transfer device comprises: The main body and a plurality of substrate supports at least partially inserted within the body, each of the plurality of substrate supports comprising silicon carbide (SiC), the method further comprising: engaging the substrate with the plurality of substrate supports; moving the substrate out of the processing space while the substrate is supported on the plurality of substrate supports; A method comprising:

20. 20. The method of claim 19, further comprising heating or cooling the plurality of substrate supports using one or more heat transfer elements embedded within the plurality of substrate supports.

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