Processing chamber deposition confinement

Abstract

To provide a semiconductor processing system and a processing method for limiting deposition on chamber components such as the backside of a substrate support or a support shaft.SOLUTION: The semiconductor processing system 300 includes a chamber body 310 including a sidewall and a base, and a substrate support 315 extending through the base of the chamber body, wherein the chamber body defines an access extending circumferentially around the substrate support at the base of the chamber body. The system further includes one or more isolators 345 disposed within the chamber body. The one or more isolators define an exhaust path between the one or more isolators and the chamber body. The exhaust path extends to a base of the chamber body. The system includes a fluid source fluidly coupled with the chamber body at a fluid access extending around the substrate support.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. Non-Provisional Application No. 17 / 077,624, filed October 22, 2020, entitled "PROCESSING CHAMBER DEPOSITION CONFINEMENT," the contents of which are incorporated herein by reference in their entirety for all purposes.

[0002] Technical Field

[0002] The present technology relates to components and apparatus for semiconductor manufacturing. More particularly, the present technology relates to processing chamber components and other semiconductor processing equipment and methods. [Background technology]

[0003] background

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of material on substrate surfaces. Fabricating patterned materials on substrates requires controlled methods for forming and removing materials. Precursors are often supplied to a processing region and distributed to uniformly deposit or etch material on the substrate. Many aspects of a processing chamber can affect processing uniformity, such as uniformity of processing conditions within the chamber, uniformity of flow through components, and other processing and component parameters. Even small discrepancies across the substrate can affect the formation or removal process. Additionally, components within the chamber can affect deposition on the edge and backside regions of chamber components or substrate support.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to fabricate high quality devices and structures. These and other needs are addressed by current technology. Summary of the Invention

[0005] An exemplary semiconductor processing system can include a chamber body including a sidewall and a base. The system can include a substrate support extending through the base of the chamber body. The chamber body can define an access extending circumferentially around the substrate support at the base of the chamber body. The system can include one or more isolators disposed within the chamber body. The one or more isolators can define an exhaust path between the one or more isolators and the chamber body. The exhaust path can extend to the base of the chamber body. The system can include a fluid source fluidly coupled to the chamber body at the access extending around the substrate support.

[0006] In some embodiments, the system may include a pumping liner having one or more isolators mounted thereon. The pumping liner may define a plurality of apertures providing fluid access to the exhaust path. The one or more isolators may include a first isolator mounted on the pumping liner. A gap may be maintained between the substrate support and the first isolator proximate a substrate support surface of the substrate support. The gap may be maintained at about 5 mm or less. The system may include a liner plate mounted on the one or more isolators. The liner plate may form a plenum at a base of the chamber body and within the chamber body. The plenum may be fluidly isolated from access extending around the substrate support at the base of the chamber body. The fluid source may include nitrogen or oxygen.

[0007] Some embodiments of the present technique may include a method of semiconductor processing. The method may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The method may include flowing a purge gas through a gap defined between a substrate support mounted on a pumping liner in the processing region and an isolator. The method may include depositing a material on a substrate mounted on the substrate support. The method may include evacuating deposition byproducts and the purge gas through the pumping liner. may include:

[0008] In some embodiments, the deposited material can be characterized by less than about 0.5% nitrogen incorporation. The substrate support can extend at least partially over the pumping liner during deposition. The semiconductor processing chamber can include a chamber body including a sidewall and a base. The substrate support can extend through the base of the chamber body. The chamber body can define an access at the base of the chamber body extending circumferentially around the substrate support. The isolator can include one or more isolators disposed within the chamber body. The one or more isolators can define an exhaust path between the one or more isolators and the chamber body. The exhaust path can be fluidly accessible through the pumping liner. The exhaust path can extend to the base of the chamber body.

[0009] In some embodiments, a gap can be maintained between the substrate support and a first isolator of the one or more isolators proximate a substrate support surface of the substrate support. The gap can be maintained at about 5 mm or less. The semiconductor processing chamber can be incorporated into a semiconductor processing system including a fluid source fluidly coupled to the chamber body at an access extending around the substrate support. The fluid source can be nitrogen or oxygen. The semiconductor processing chamber can include a liner plate mounted on the one or more isolators. The liner plate can form a plenum at the base of the chamber body and within the chamber body. The plenum can be fluidly isolated from the access extending around the substrate support at the base of the chamber body.

[0010] Some embodiments of the present technology may include a semiconductor processing system. The system may include a chamber body including a sidewall and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access extending circumferentially around the substrate support at the base of the chamber body. The system may include a pumping liner. The system may include a chamber body including a sidewall and a base. The system may include one or more isolators disposed within the chamber body. The one or more isolators may include a first isolator mounted on the pumping liner. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The system may include a fluid source fluidly coupled to the chamber body at the access extending around the substrate support. In some embodiments, the system may include a liner plate mounted on the one or more isolators. The liner plate may form a plenum at the base of the chamber body and within the chamber body. The plenum may be fluidly isolated from an access that extends around the substrate support at the base of the chamber body.

[0011] Such techniques may offer many advantages over conventional systems and techniques. For example, embodiments of the present technique limit deposition on chamber components, such as the backside of the substrate support or support shaft. Additionally, some embodiments of the present technique may improve cleaning operations within the chamber. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0012] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and drawings. [Brief explanation of the drawings]

[0013] [Figure 1] 1 illustrates a plan view of an exemplary processing system in accordance with some embodiments of the present technique. [Figure 2]

[0014] 1 shows a schematic cross-sectional view of an exemplary plasma system in accordance with some embodiments of the present technique; [Figure 3]

[0015] 1 shows a schematic partial cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technique; [Figure 4]

[0016] 1 shows a schematic partial cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technique; [Figure 5]

[0017] 1 illustrates operations of an exemplary method of semiconductor processing in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0018] Some of the figures are included as circuit diagrams. It should be understood that the figures are for illustrative purposes and should not be considered to scale unless specifically indicated to scale. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0015]

[0019] In the accompanying figures, similar components and / or features may have the same reference label. Furthermore, various components of the same type may be distinguished by following the reference label with a letter that distinguishes between the similar components. When only a first reference number is used herein, the description is applicable to any one of the similar components having the same first reference number, regardless of the letter.

[0016]

[0020] Plasma-enhanced deposition processes can energize one or more constituent precursors to facilitate film formation on a substrate. Any number of material films can be produced to develop semiconductor structures, including conductive and dielectric films, as well as films that facilitate material transfer and removal. For example, hard mask films can be formed to facilitate substrate patterning while protecting and preserving underlying materials. Additionally, other dielectric materials can be deposited to isolate transistors on a substrate or form semiconductor structures. In many processing chambers, several precursors can be mixed in a gas panel and delivered to the processing region of the chamber where the substrate may be placed. While lid stack components can affect flow distribution to the processing chamber, many other processing variables can similarly affect deposition uniformity.

[0017]

[0021] While lid stack components can advantageously distribute precursors to the processing region to promote uniform deposition, the structure and operation to ensure more uniform coverage across the substrate can extend deposition to multiple regions around the chamber. For example, deposition precursors and products may be flowed through an exhaust system connected at the base of the processing chamber. However, because many of these components are maintained at a lower or significantly lower temperature than the substrate being processed, deposition materials may more easily condense or redeposit on the substrate support shaft or chamber body walls. To address this issue, conventional techniques may be forced to increase the timing of subsequent chamber cleaning processes after deposition. However, such processes may have several drawbacks. For example, accessing these areas of the chamber may become more difficult, which may increase the required cleaning time and increase wait times, potentially reducing system throughput. Furthermore, these increased cleaning times may expose other chamber components to prolonged interaction with plasma effluents, potentially resulting in faster corrosion of the chamber or components.

[0018]

[0022] The present technique overcomes these challenges by creating gas distribution paths through the processing chamber, which can draw deposition precursors and byproducts into an exterior region that can be isolated from the processing region. Additionally, a purge gas can be used to fill the region below the substrate support, thereby limiting diffusion of deposition material into this region of the chamber. By blocking deposition diffusion and creating specific exhaust paths from the chamber, cleaning operations can be improved by limiting cleaning performed in recessed regions, thereby increasing throughput.

[0019]

[0023] While the remainder of the disclosure routinely identifies particular deposition processes utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers and processes that may occur in the described chambers. Thus, the technology should not be considered limited to use with only these particular deposition processes or chambers. This disclosure discusses one possible system and chamber that may include lid stack components according to embodiments of the present technology, before describing additional modifications and adjustments to this system according to embodiments of the present technology.

[0020]

[0024] FIG. 1 illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber processing system 100, according to an embodiment. In the figure, a pair of front-opening integrated pods 102 deliver substrates of various sizes that are received by a robotic arm 104, placed in one of the substrate processing chambers 108a-f, and placed in a low-pressure holding area 106 before being positioned in tandem sections 109a-c. A second robotic arm 110 can be used to transfer substrate wafers from the holding area 106 to and from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f can be equipped to perform multiple substrate processing operations, including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, alignment, and other substrate processes, including annealing, ashing, and the like.

[0021]

[0025] The substrate processing chambers 108a-f can include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers, e.g., 108c-d and 108e-f, can be used to deposit a dielectric material on a substrate, and a third pair of processing chambers, e.g., 108a-b, can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, can be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes can be performed in chambers separate from the fabrication system shown in different embodiments. It should be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are contemplated by system 100.

[0022]

[0026] 2 shows a schematic cross-sectional view of an exemplary plasma system 200 in accordance with some embodiments of the present technique. The plasma system 200 may represent a pair of processing chambers 108 that may fit one or more of the tandem sections 109 described above and may include face plates or other parts or assemblies in accordance with embodiments of the present technique. The plasma system 200 may generally include a chamber body 202 having a sidewall 212, a bottom wall 216, and an interior sidewall 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and include identical components.

[0023]

[0027] For example, processing region 220B, whose components may be included in processing region 220A, may include a pedestal 228 disposed in the processing region through a passageway 222 formed in the bottom wall 216 of plasma system 200. Pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. Pedestal 228 may include a heating element 232, such as a resistive heating element, capable of heating and controlling the substrate temperature at a desired processing temperature. Pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device.

[0024]

[0028] The body of the pedestal 228 can be coupled to the stem 226 by a flange 233. The stem 226 can electrically couple the pedestal 228 to a power outlet or power box 203. The power box 203 can include a drive system that controls the elevation and movement of the pedestal 228 within the processing region 220B. The stem 226 can also include a power interface for supplying power to the pedestal 228. The power box 203 can also include an interface for power and temperature indicators, such as a thermocouple interface. The stem 226 can include a base assembly 238 adapted to removably couple with the power box 203. A circumferential ring 235 is shown on the power box 203. In some embodiments, the circumferential ring 235 can be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the top surface of the power box 203.

[0025]

[0029] The rod 230 may be included through a passageway 224 formed in the bottom wall 216 of the processing region 220B and may also be utilized to position substrate lift pins 261 disposed through the body of the pedestal 228. The substrate lift pins 261 may selectively move the substrate 229 away from the pedestal to facilitate exchange of the substrate 229 with a robot utilized to move the substrate 229 into and out of the processing region 220B through the substrate transfer port 260.

[0026]

[0030] A chamber lid 204 may be coupled to the top of the chamber body 202. The lid 204 may house one or more precursor distribution systems 208 coupled thereto. The precursor distribution system 208 may include a precursor inlet passage 240 that may deliver reactant and cleaning precursors into the processing region 220B via a gas supply assembly 218. The gas supply assembly 218 may include a gas box 248 having a blocker plate 244 disposed intermediate a faceplate 246. A radio frequency (“RF”) source 265 may be coupled to the gas supply assembly 218, which may provide power to the gas delivery assembly 218 to facilitate generation of a plasma region between the faceplate 246 of the gas delivery assembly 218 and the pedestal 228, which may be the processing region of the chamber. In some embodiments, the RF source may be coupled to other portions of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. A dielectric isolator 258 may be disposed between the lid 204 and the gas supply assembly 218 to prevent conduction of RF power to the lid 204. A shadow ring 206 may be disposed around the pedestal 228 to engage the pedestal 228.

[0027]

[0031] Optional cooling channels 247 may be formed within the gas box 248 of the gas distribution system 208 to cool the gas box 248 during operation. A heat transfer fluid, such as water, ethylene glycol, or gas, may be circulated through the cooling channels 247 to maintain the gas box 248 at a predetermined temperature. A liner assembly 227 may be positioned within the processing region 220B in close proximity to the sidewalls 201, 212 of the chamber body 202 to prevent exposure of the sidewalls 201, 212 to the processing environment within the processing region 220B. The liner assembly 227 may include a circumferential pumping cavity 225 that may be coupled to a pumping system 264 configured to evacuate gases and byproducts from the processing region 220B and control the pressure within the processing region 220B. A plurality of exhaust ports 231 may be formed on the liner assembly 227. The exhaust ports 231 may be configured to allow gas flow from the processing region 220B to the circumferential pumping cavity 225 in a manner that facilitates processing within the system 200.

[0028]

[0032] FIG. 3 illustrates a schematic, partial cross-sectional view of an exemplary processing system 300, in accordance with some embodiments of the present technique. FIG. 3 may provide additional details regarding components within system 200. System 300 may be understood to include any feature or aspect of system 200 described above in some embodiments. System 300 may be used to perform semiconductor processing operations, including deposition of the aforementioned hard mask or other materials, as well as other deposition, removal, or cleaning operations. System 300 illustrates a partial view of chamber components that may be incorporated into the discussed semiconductor processing system, and may also be shown without some of the lid stack components described above. As will be readily understood by those skilled in the art, any aspect of system 300 may also be incorporated into other processing chambers or systems.

[0029]

[0033] The system 300 can include a processing chamber including a faceplate 305 through which precursors can be delivered for processing and which can be coupled to a power source for generating a plasma within a processing region of the chamber. The chamber can also include a chamber body 310, which may include sidewalls and a base, as shown. A pedestal or substrate support 315 can extend through the base of the chamber, as previously described. The substrate support can include a support platen 320 that can support a semiconductor substrate 322. The support platen 320 can be coupled to a shaft 325 that extends through the base of the chamber. The shaft 325 can provide access to numerous fluid and electrical connections, such as connections for a heater or chuck.

[0030]

[0034] As shown, the chamber body 310 can define an access 330 that extends around the substrate support and can be defined by the chamber body and / or by one or more additional components within the chamber. A fluid source 335 can be coupled to the access 330 and configured to supply one or more purge materials through the access into an area defined at least in part by the backside of the substrate support platen. As described below, any inert or noble gas can be flowed through the access, but in some embodiments, the fluid source can supply nitrogen and / or oxygen through the access to promote diffusion prevention around the substrate support.

[0031]

[0035] The system 300 can also include additional components that cooperate to define an exhaust path from the processing chamber. While some conventional techniques allow deposition material to flow around the substrate support to an exhaust location at the bottom of the processing chamber, the present technique can form an exhaust path that extends around the chamber. As shown, in some embodiments, the system 300 can include a pumping liner 340 that is mounted as part of or on the chamber body and extends around the substrate processing chamber. While illustrated within the interior depth of the chamber body, the faceplate 305 can in some embodiments be mounted directly on the pumping liner 340. The pumping liner 340 can define a plurality of apertures 342 around the liner, which can provide fluid access to the exhaust path through the chamber. While the exhaust path is defined outside the chamber body 310, one or more isolators 345 can be positioned within the processing chamber to define the interior walls of the exhaust path. Thus, an annular exhaust path can be formed that extends around an area outside the interior region of the processing chamber. The exhaust path can be defined between the chamber body and the isolator. Access to the exhaust path may be provided by an aperture through the pumping liner 340, while an outlet from the exhaust path may occur through the base of the chamber. A pump or exhaust system 350 may be fluidly coupled to the exhaust path, allowing materials to be evacuated from the processing chamber.

[0032]

[0036] As described further below, the isolator 345 can include one or more annular components that define an exhaust path to the base of the chamber. The isolator 345 can rest on a ledge defined on the inner edge of the pump liner 340. As shown, a bevel can be formed that extends to the outer edge of the isolator, and the isolator can rest on the pump liner. It should be understood that any other edge profile can be formed, including chamfered, grooved, or filleted edge profiles. The edge profile can be tailored to promote material flow from the processing region of the chamber and limit deposition on components extending outside the processing region. The isolator 345 can be positioned to maintain a gap 355 between the outer edge of the substrate support and the inner edge of the isolator, such as near the substrate support surface or along the radial or outer edge of the platen. While the gap can be maintained at any size, in some embodiments, the gap can be maintained at about 5.0 mm or less to limit diffusion of deposition material behind the substrate support platen, and the gap can be maintained at about 4.5 mm or less, about 4.0 mm or less, about 3.5 mm or less, about 3.0 mm or less, about 2.5 mm or less, about 2.0 mm or less, about 1.5 mm or less, or smaller sizes. However, the gap can be maintained wide enough to limit turbulence in the flow of purge gas flowing upward through the chamber to inhibit diffusion, and in some embodiments, the gap can be maintained at about 1.0 mm or more, about 1.5 mm or more, about 2.0 mm or more, or wider.

[0033]

[0037] The liner plate 360 ​​can be coupled to an isolator 345, which can form a plenum between the liner plate and the base of the chamber body. The plenum can be fluidly accessed by an exhaust system that removes materials from the processing chamber. An additional block or isolator 365 can extend between the base of the chamber body and the liner plate 360, and may also extend around the substrate support shaft 325. This ensures that the purge path around the substrate support shaft and the access 330 remain fluidly isolated from the plenum formed between the chamber base and the liner plate. Thus, the purge flow path can be controlled to provide flow up through the access 330 in the chamber, through the gap 355 that limits deposition diffusion, through the apertures 342 in the pumping liner 340, and out through the exhaust system 350.

[0034]

[0038] FIG. 4 shows a schematic partial cross-sectional view of an exemplary processing chamber 400 in accordance with some embodiments of the present technique. The chamber 400 may include any of the components, features, or characteristics of the systems 300 or 200 described above, and may also depict additional features of the chamber components of the system 300. For example, as discussed above, the faceplate 305 may be mounted directly on the pumping liner 340, which may be mounted on the chamber body 310, such as an additional isolator as shown. The pumping liner may define apertures 342, as shown, to provide fluid access to an exhaust path defined between the chamber body 310 and an isolator 345 structure within the chamber. Furthermore, in some embodiments, the isolator 345 may include multiple components that may be joined or coupled to form an isolator structure. For example, a first isolator 405 may be mounted on an interior ledge of the pumping liner 340, defining a gap between the interior edge of the pumping liner and the exterior of the substrate support plate 315. A second isolator and a third isolator may also be included, which may extend toward the base of the processing chamber. The top interior edge of the first isolator 405 may define a lip or flange as shown to form a choke at any of the gap dimensions discussed above. A liner plate 360 ​​may rest on the interior ledge formed by the isolator 345 and may define a plenum with a pumping plate as shown, or the base of the chamber, and may also at least partially define the access 330, which allows purge material to flow into the area below the substrate support.

[0035]

[0039] As previously described, some embodiments of the present technique can create purge and exhaust flow paths that can limit deposition to chamber components outside of the processing region defined between the substrate support and faceplate. Figure 5 illustrates operations of an exemplary method 500 of semiconductor processing in accordance with some embodiments of the present technique. The method can be performed in a variety of processing chambers, including the processing systems 200 and 300 described above, which may include any features or components that define purge and exhaust paths as described above. Method 500 can include several optional operations that may or may not be specifically related to some embodiments of the method in accordance with the present technique. For example, many of the operations are described to provide a broader scope of the technique, but are not critical to the technique or may be performed by alternative methods, as will be readily understood.

[0036]

[0040] Method 500 may include additional operations before the enumerated operations begin. For example, semiconductor processing may be performed before starting method 500. The processing operations may be performed within the chamber or system in which method 500 is performed, or processing may be performed in one or more other processing chambers before transferring the part to a cleaning system where method 500 may be performed. Once a substrate is received within a processing chamber, such as including some or all of the components of system 300 described above, method 500 may include, in operation 505, forming a plasma of one or more deposition precursors within a processing region of the semiconductor processing chamber. The substrate may be positioned on a substrate support, such as support 315 described above, which may include any of the components, features, or characteristics described above. During formation, including during a deposition operation, a purge gas may be flowed through the base of the chamber to an access in operation 510. The purge gas can flow through the area below the substrate support and can flow through a gap defined between the substrate support and an isolator, such as isolator 345, which may include first isolator 405, as discussed above, mounted on a pumping liner within the processing region.

[0037]

[0041] In operation 515, material may be deposited on a substrate from the plasma effluent of one or more deposition precursors. In operation 520, both residual deposition material and by-products, as well as a purge gas, may be passed through apertures in the pumping liner into an exhaust path formed between the chamber body and the isolator. These materials may then be evacuated from the processing chamber. While conventional techniques may result in additional material being deposited on the backside of the substrate support platen or on the shaft of the pedestal, the present technique, as described above, can utilize a defined exhaust path and flow of a purge gas to limit diffusion of deposition material to this region.

[0038]

[0042] As noted above, any number of purge gases can be flowed through the access and gaps within the chamber. For example, any noble gas, including helium or argon, hydrogen, nitrogen, oxygen, or any other material can be flowed as the purge gas. However, in some embodiments, the purge gas is or can include nitrogen or oxygen, which can limit the formation of a parasitic plasma within the processing chamber. Argon can be characterized by a lower ionization potential, and when it penetrates the gap and flows into the capacitively coupled plasma region, it can ionize and form a plasma discharge outside the formed deposition plasma, which, in some embodiments, can affect deposition or damage chamber components. Nitrogen and oxygen can be characterized by a higher ionization energy, which can limit discharge in the gap region at the outer edge of the substrate support.

[0039]

[0043] The flow of the purge gas can affect aspects of the deposition. For example, in one non-limiting example, a carbon hard mask can be deposited on a substrate using processes and apparatus according to embodiments of the present technology. In some embodiments, the deposition precursors can be limited to precursors containing carbon and hydrogen, and / or one or more carrier gases. While nitrogen cannot be actively flowed as a deposition precursor, trace amounts of nitrogen can be naturally incorporated into the film formed based on the environment. Using nitrogen as a purge gas can increase nitrogen incorporation at the edge region of the film, which can affect the operational performance of the mask material. To limit the amount of nitrogen incorporation, the flow rate of the nitrogen as a purge gas can be limited to about 2000 sccm or less of nitrogen introduced through an access in the chamber, and the flow rate can be limited to about 1800 sccm or less, about 1600 sccm or less, about 1400 sccm or less, or about 1400 sccm or less, about 1200 sccm or less, about 1000 sccm or less, about 800 sccm or less, about 600 sccm or less, or less. However, depending on the size of the gap as discussed above, a reduced purge gas flow rate may result in increased diffusion into the area, and therefore, in some embodiments, the flow rate may be maintained at about 500 sccm or greater, about 700 sccm or greater, or even higher.

[0040]

[0044] Controlling the nitrogen flow can limit the purge gas in the deposition region and limit incorporation into the film during deposition. Thus, in some embodiments, nitrogen incorporation into a carbon hard mask or other film can be limited to less than about 0.50% at a depth of 1 micrometer in the edge region of the substrate, and can be limited to about 0.45% or less, about 0.40% or less, about 0.35% or less, about 0.30% or less, about 0.25% or less, about 0.20% or less, about 0.15% or less, about 0.10% or less, about 0.05% or less, about 0.03% or less, or less.

[0041]

[0045] When oxygen is used as a purge gas, it can also interact with the plasma deposition. Again, for the non-limiting example of a carbon hard mask, oxygen that may flow into the deposition area can etch some of the carbon from the substrate. However, by controlling the flow rate to one of the rates above, etching can be maintained in the bevel or far edge regions of the substrate, which can advantageously limit or reduce particle generation or edge peeling caused by deposition in these regions.

[0042]

[0046] The location of the substrate support relative to the pumping liner can also affect the diffusion aspects of the process being performed. In some embodiments, the substrate can be maintained at a range of heights relative to the pumping liner, and may be contained in any plane alongside, above, below, or through the pumping liner. However, this height relationship can affect deposition aspects and may be addressed by additional flow or gap adjustment. For example, when the substrate support surface of the substrate support is lower than the height of the pumping liner, flow up to the pumping liner can allow more purge gas to flow toward the deposition region, potentially incorporating additional material into the film. When the substrate support is above the height of the pumping liner, deposition can occur on the exposed radial edge of the substrate support platen, but flow can be drawn directly into the exhaust path.

[0043]

[0047] Once the substrate has been processed, it is removed from the chamber and a cleaning operation is performed. The purge gas may be reduced or stopped during the cleaning operation to allow cleaning emissions to access the area and remove any diffusion of deposition material that may have occurred. Embodiments of the present technology may improve throughput by limiting diffusion of deposition material, thereby reducing cleaning time.

[0044]

[0048] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details, or with additional details.

[0045]

[0049] While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Moreover, in order to avoid unnecessarily obscuring the technology, some well-known processes and elements have not been described. Therefore, the above description should not be construed as limiting the scope of the technology.

[0046]

[0050] Where a range of values ​​is presented, unless the context clearly dictates otherwise, it is understood that each intervening value between the upper and lower limits of that range is also specifically disclosed to the smallest unit of the lower limit. Any smaller ranges between a stated value or an unstated intervening value in a stated range and any other stated or intervening value in the stated range are encompassed. The upper and lower limits of these smaller ranges may be independently included or excluded, and each range in which either, neither, or both limits are included in the smaller range is also encompassed within the technology, subject to the specifically excluded limit in the stated range. When one or both limits are included in a stated range, ranges excluding either or both of the included limits are also included.

[0047]

[0051] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "an aperture" includes a plurality of such apertures, reference to "a fluid" includes a reference to one or more fluids and equivalents thereof known to those skilled in the art, and so forth.

[0048]

[0052] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. a chamber body including a sidewall and a base; a substrate support extending through the base of the chamber body, the chamber body defining an access extending circumferentially around the substrate support at the base of the chamber body; one or more isolators disposed within the chamber body, the one or more isolators defining an exhaust path between the one or more isolators and the chamber body, the exhaust path extending to the base of the chamber body; a fluid source fluidly connected to the chamber body at the access extending around the substrate support; 1. A semiconductor processing system comprising:

2. 10. The semiconductor processing system of claim 1, further comprising a pumping liner onto which said one or more isolators are mounted and which defines a plurality of apertures providing fluid access to said exhaust path.

3. 3. The semiconductor processing system of claim 2, wherein said one or more isolators include a first isolator mounted on said pumping liner.

4. 4. The semiconductor processing system of claim 3, wherein a gap is maintained between the substrate support and the first isolator proximate a substrate support surface of the substrate support.

5. 5. The semiconductor processing system of claim 4, wherein said gap is maintained at about 5 mm or less.

6. 10. The semiconductor processing system of claim 1, further comprising a liner plate resting on said one or more isolators, said liner plate forming a plenum within said chamber body at said base of said chamber body.

7. 7. The semiconductor processing system of claim 6, wherein said plenum is fluidly isolated from said access extending around said substrate support at said base of said chamber body.

8. 10. The semiconductor processing system of claim 1, wherein the fluid source comprises nitrogen or oxygen.

9. forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber; flowing a purge gas through a gap defined between a substrate support and an isolator mounted on a pumping liner within the processing region; depositing a material onto a substrate resting on the substrate support; exhausting deposition by-products and purge gas through said pumping liner; A semiconductor processing method comprising:

10. 10. The semiconductor processing method of claim 9, wherein the deposited material is characterized by nitrogen incorporation of about 0.5% or less.

11. 10. The semiconductor processing method of claim 9, wherein the substrate support extends at least partially over the pumping liner during the depositing.

12. the semiconductor processing chamber comprising: a chamber body including a sidewall and a base; the substrate support extends through the base of the chamber body; the chamber body defines an access extending circumferentially around the substrate support at the base of the chamber body; the isolator includes one or more isolators disposed within the chamber body; the one or more isolators define an exhaust path between the one or more isolators and the chamber body, the exhaust path being fluidly accessed through the pumping liner; the exhaust path extends toward the base of the chamber body; 10. The semiconductor processing method of claim 9.

13. 13. The semiconductor processing method of claim 12, wherein the gap is maintained between the substrate support and a first isolator of the one or more isolators proximate a substrate support surface of the substrate support.

14. 14. The semiconductor processing method of claim 13, wherein the gap is maintained at about 5 mm or less.

15. The semiconductor processing chamber is incorporated into a semiconductor processing system, the semiconductor processing system comprising:

13. The semiconductor processing method of claim 12, further comprising a fluid source fluidly connected to the chamber body at the access extending around the substrate support.

16. 16. The semiconductor processing method of claim 15, wherein the fluid source comprises nitrogen or oxygen.

17. the semiconductor processing chamber comprising:

13. The semiconductor processing method of claim 12, further comprising a liner plate resting on the one or more isolators, the liner plate forming a plenum within the chamber body at the base of the chamber body.

18. 20. The semiconductor processing method of claim 17, wherein the plenum is fluidly isolated from the access extending around the substrate support at the base of the chamber body.

19. a chamber body including a sidewall and a base; a substrate support extending through the base of the chamber body, the chamber body defining an access extending circumferentially around the substrate support at the base of the chamber body; a pumping liner mounted on the chamber body; one or more isolators disposed within the chamber body, the one or more isolators including a first isolator resting on the pumping liner, the one or more isolators defining an exhaust path between the one or more isolators and the chamber body, the exhaust path extending to the base of the chamber body; a fluid source fluidly connected to the chamber body at the access extending around the substrate support; 1. A semiconductor processing system comprising:

20. 20. The semiconductor processing system of claim 19, further comprising a liner plate mounted on the one or more isolators, the liner plate forming a plenum within the chamber body at the base of the chamber body, the plenum being fluidly isolated from the access extending around the substrate support at the base of the chamber body.

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