Electronic component

Abstract

To provide an electronic component which suppresses the occurrence of cracks in an element body.SOLUTION: The internal electrode disposed in the element body includes an end exposed to the first side surface. The outer conductors disposed on the element body contain a glass composition containing SiO2 and Al2O3 and conductive metals. The external conductor includes a first region disposed on the first side surface and connected to the end included in the internal conductor, and a second region disposed on at least one of the pair of second side surfaces. The glass composition included in the first region has a total content of 23mol and Al2O3 of SiO2% or more. The glass composition contained in the second region has a total content of 5mol and 20mol of SiO2% or more and Al2O3% or less.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to electronic components. [Background technology]

[0002] The known electronic component includes an element body, an internal conductor disposed within the element body, and an external conductor disposed on the element body and connected to the internal conductor. The element body includes a first side surface and a pair of second side surfaces adjacent to the first side surface and facing each other. The external conductor includes a first region disposed on the first side surface and connected to an end of the internal conductor, and a second region disposed on at least one of the pair of second side surfaces. The external conductor includes a glass composition and a conductive metal. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 64-65816 Summary of the Invention [Problem to be solved by the invention]

[0004] In a configuration in which an electronic component is mounted on an electronic device, an external force acting on the electronic component from the electronic device may act as stress on the element body. The external force acts on the element body through the external conductor. The stress tends to concentrate on the edge of the external conductor, i.e., the edge of the second region, on the second side surface. If the stress concentrates on the edge of the second region, cracks may occur in the element body, starting from the edge of the second region. If a crack occurs in the element, it may reach the internal conductor, and in an electronic component where the crack has reached the internal conductor, the characteristics may be degraded.

[0005] An object of one aspect of the present invention is to provide an electronic component that suppresses the occurrence of cracks in the element body. [Means for solving the problem]

[0006] An electronic component according to one embodiment of the present invention includes an element body, an internal conductor, and an external conductor. The element body includes a first side surface and a pair of second side surfaces adjacent to the first side surface and facing each other. The internal conductor is disposed within the element body and includes an end exposed at the first side surface. The external conductor is disposed on the element body and includes a glass composition including SiO2 and Al2O3 and a conductive metal. The external conductor includes a first region disposed on the first side surface and connected to the end included in the internal conductor, and a second region disposed on at least one of the pair of second side surfaces. The glass composition contained in the first region has a total content of SiO2 and Al2O3 of 23 mol% or more. The glass composition contained in the second region has a total content of SiO2 and Al2O3 of 5 mol% or more and 20 mol% or less.

[0007] The present inventors have conducted research into electronic components in which cracks are unlikely to occur in the element body, and as a result, have discovered the following. If the second region tends to peel off from the element body when an external force acts on the external conductor, stress is less likely to concentrate on the edge of the second region, i.e., cracks are less likely to occur in the element body. Therefore, it is required that the second region easily peels off from the element body when an external force acts on the external conductor. If the first region tends to peel off from the element body, the connection between the internal conductor and the first region may be severed. In an electronic component in which the connection between the internal conductor and the first region is severed, the characteristics of the electronic component deteriorate. Therefore, it is required that the first region is resistant to peeling off from the element body even when an external force acts on the external conductor.

[0008] Next, the inventors conducted research into electronic components in which the second region is easily peeled off from the element body when an external force acts on the external conductor, and the first region is not easily peeled off from the element body, and as a result, the inventors discovered the following facts. The glass composition contained in the external conductor increases the bonding strength between the external conductor and the element body. Of the oxides contained in the glass composition, SiO2 and Al2O3 affect the bonding strength between the external conductor and the element body. A configuration in which the external conductor contains a glass composition in which the total content of SiO2 and Al2O3 is 23 mol% or more maintains the bonding strength between the external conductor and the element body. In contrast, a configuration in which the external conductor contains a glass composition in which the total content of SiO2 and Al2O3 is 5 mol% or more and 20 mol% or less reduces the bonding strength between the external conductor and the element body.

[0009] In one embodiment, the glass composition contained in the second region has a total content of SiO2 and Al2O3 of 5 mol% or more and 20 mol% or less. Therefore, when an external force acts on the external conductor, the second region is likely to peel off from the element body. Stress is unlikely to concentrate on the edge of the second region on the second side surface. As a result, this embodiment suppresses the occurrence of cracks in the element body. The glass composition contained in the first region has a total content of SiO2 and Al2O3 of 23 mol% or more. Therefore, even if an external force acts on the external conductor, the first region is unlikely to peel off from the element body. As a result, this aspect prevents deterioration of characteristics.

[0010] In the above one embodiment, in the first region, the glass composition may have a content of more than 5 vol % and less than 25 vol % with respect to the total of the glass composition and the conductive metal. In the first region, a configuration in which the content of the glass composition is greater than 5 vol % with respect to the total of the glass composition and the conductive metal ensures the density of the first region. A configuration in which the glass composition in the first region has a content of less than 25 vol% relative to the total of the glass composition and the conductive metal can ensure plating adhesion even when a plating layer is formed in the first region.

[0011] In the above one embodiment, in the second region, the glass composition may have a content of more than 5 vol % and less than 25 vol % with respect to the total of the glass composition and the conductive metal. In the second region, a configuration in which the content of the glass composition is greater than 5 vol % with respect to the total of the glass composition and the conductive metal ensures the density of the second region. In the second region, a configuration in which the glass composition has a content of less than 25 vol% relative to the total of the glass composition and the conductive metal can ensure plating adhesion even when a plating layer is formed in the second region.

[0012] In the above one embodiment, the glass composition may have a content of more than 5 vol% and less than 25 vol% of the total of the glass composition and the conductive metal in each of the first region and the second region. A configuration in which the glass composition has a content of more than 5 vol% relative to the total of the glass composition and the conductive metal in each of the first region and the second region ensures densification in each of the first region and the second region. A configuration in which the glass composition has a content of less than 25 vol% relative to the total of the glass composition and the conductive metal in each of the first region and the second region can ensure plating adhesion even when a plating layer is formed in the first region and the second region.

[0013] In the above one embodiment, the difference in content of the glass composition between the first region and the second region may be 0 to 7 vol %. A configuration in which the difference in content of the glass composition between the first region and the second region is 0 to 7 vol % further ensures the density of the outer conductor.

[0014] In the above one embodiment, the second region may be disposed continuously on the first region. In a configuration in which the second region is disposed continuously on the first region, the first region is even less likely to peel off from the element body.

[0015] In the above one aspect, the second region may be disposed so as to cover the entire first region. In a configuration in which the second region is disposed so as to cover the entire first region, the first region is even less likely to peel off from the element body.

[0016] In one of the above aspects, the length of the second region disposed on one of the pair of second side surfaces may be greater than the length of the second region disposed on the other of the pair of second side surfaces. A configuration in which the length of the second region disposed on one of the pair of second side surfaces is greater than the length of the second region disposed on the other of the pair of second side surfaces can cause directional orientation when mounting an electronic component, and therefore, in this configuration, the one of the pair of second side surfaces can be reliably positioned to form the mounting surface.

[0017] In the above one aspect, the second region may not be disposed on the other of the pair of second side surfaces. In a configuration in which the second region is not disposed on the other of the pair of second side surfaces, the one of the pair of second side surfaces can be more reliably disposed to form the mounting surface. [Effects of the Invention]

[0018] One aspect of the present invention provides an electronic component that suppresses cracks from occurring in the element body. [Brief explanation of the drawings]

[0019] [Figure 1] FIG. 1 is a perspective view of a multilayer capacitor in accordance with an embodiment. [Figure 2] FIG. 2 is a diagram showing a cross-sectional structure of the multilayer capacitor in accordance with this embodiment. [Figure 3] FIG. 3 is a diagram showing the first electrode layer. [Figure 4] FIG. 4 is a schematic diagram showing the configuration of the first electrode layer. [Figure 5] FIG. 5 is a chart showing the test results for each sample. [Figure 6] FIG. 6 is a chart showing the test results for each sample. [Figure 7] FIG. 7 is a diagram showing a cross-sectional structure of a multilayer capacitor according to a modified example of this embodiment. [Figure 8] FIG. 8 is a diagram showing the first electrode layer. [Figure 9] FIG. 9 is a diagram showing a cross-sectional structure of a multilayer capacitor according to another modified example of this embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description, the same elements or elements having the same functions will be denoted by the same reference numerals, and redundant description will be omitted.

[0021] The configuration of the multilayer capacitor C1 in accordance with this embodiment will be described with reference to Fig. 1 to Fig. 3. Fig. 1 is a perspective view of the multilayer capacitor in accordance with this embodiment. Fig. 2 is a view showing a cross-sectional configuration of the multilayer capacitor in accordance with this embodiment. Fig. 3 is a view showing a first electrode layer. Fig. 4 is a schematic view showing the configuration of the first electrode layer. The electronic component includes, for example, a multilayer capacitor C1.

[0022] As shown in Fig. 1, the multilayer capacitor C1 includes a rectangular parallelepiped element body 3 and a plurality of external electrodes 5. The multilayer capacitor C1 includes, for example, a pair of external electrodes 5. The pair of external electrodes 5 are arranged on the outer surface of the element body 3. The pair of external electrodes 5 are spaced apart from each other. The rectangular parallelepiped shape includes a rectangular parallelepiped shape with chamfered corners and edges, or a rectangular parallelepiped shape with rounded corners and edges.

[0023] The element body 3 includes four side surfaces 3a and a pair of side surfaces 3e facing each other. The four side surfaces 3a and the pair of side surfaces 3e have a rectangular shape. The four side surfaces 3a include a pair of side surfaces 3a facing each other and another pair of side surfaces 3a facing each other. The direction in which the pair of side surfaces 3a face each other is direction D2. The direction in which the other pair of side surfaces 3a face each other is direction D3. The direction in which the pair of side surfaces 3e face each other is direction D1. The multilayer capacitor C1 is solder-mounted to an electronic device. The electronic device includes, for example, a circuit board or another electronic component. One of the four side surfaces 3a of the multilayer capacitor C1 faces the electronic device. One of the four side surfaces 3a is disposed to form a mounting surface. One of the four side surfaces 3a is the mounting surface. For example, when the side surface 3e includes a first side surface, the pair of side surfaces 3a or another pair of side surfaces 3a includes a pair of second side surfaces. Each of the pair of side surfaces 3e may, for example, define an end surface.

[0024] The direction D2 is a direction perpendicular to a pair of side surfaces 3a and is perpendicular to the direction D3. The direction D1 is a direction parallel to a pair of side surfaces 3a and another pair of side surfaces 3a and is perpendicular to the directions D2 and D3. The direction D3 is a direction perpendicular to another pair of side surfaces 3a, and the direction D1 is a direction perpendicular to each side surface 3e. The length of the element body 3 in the direction D1 is, for example, greater than the length of the element body 3 in the direction D2 and greater than the length of the element body 3 in the direction D3. The direction D1 is the longitudinal direction of the element body 3. The length of the element body 3 in the direction D2 and the length of the element body 3 in the direction D3 may be equal to each other. The length of the element body 3 in the direction D2 and the length of the element body 3 in the direction D3 may be different from each other.

[0025] The length of element body 3 in direction D2 is the height of element body 3. The length of element body 3 in direction D3 is the width of element body 3. The length of element body 3 in direction D1 is the length of element body 3. For example, the height of element body 3 is 0.1 to 3.2 mm, the width of element body 3 is 0.1 to 6.3 mm, and the length of element body 3 is 0.2 to 7.5 mm. For example, the height of element body 3 is 1.6 mm, the width of element body 3 is 1.6 mm, and the length of element body 3 is 3.2 mm.

[0026] A pair of side surfaces 3a extends in direction D3 to connect another pair of side surfaces 3a. A pair of side surfaces 3a also extends in direction D1. A different pair of side surfaces 3a extends in direction D2 to connect another pair of side surfaces 3a. A different pair of side surfaces 3a also extends in direction D1. A pair of side surfaces 3e extends in direction D2 to connect another pair of side surfaces 3a. A pair of side surfaces 3e extends in direction D3 to connect another pair of side surfaces 3a.

[0027] The element body 3 includes a ridge located between the side surface 3e and the side surface 3a, and a ridge located between one of the pair of side surfaces 3a and one of another pair of side surfaces 3a. For example, each ridge is rounded to be curved. The element body 3 is subjected to so-called R-chamfering. The side surface 3e and the side surface 3a are indirectly adjacent to each other through the ridge located between the side surface 3e and the side surface 3a. One of the pair of side surfaces 3a and one of another pair of side surfaces 3a are indirectly adjacent to each other through the ridge located between one of the pair of side surfaces 3a and one of another pair of side surfaces 3a.

[0028] The element body 3 is configured by stacking multiple dielectric layers in direction D2. The element body 3 includes multiple dielectric layers that are stacked. In the element body 3, the stacking direction of the multiple dielectric layers coincides with direction D2. Each dielectric layer is configured, for example, from a sintered ceramic green sheet containing a dielectric material. The dielectric material includes a dielectric ceramic. The dielectric ceramic includes, for example, a BaTiO3-based, Ba(Ti,Zr)O3-based, or (Ba,Ca)TiO3-based material. In an actual element body 3, the dielectric layers are integrated to the extent that the boundaries between the dielectric layers are not visible. The element body 3 includes a ceramic element body.

[0029] As shown in FIG. 2, the multilayer capacitor C1 includes a plurality of internal electrodes 7. Each internal electrode 7 is an internal conductor disposed within the element body 3. Each internal electrode 7 is made of a conductive material that is typically used as an internal conductor for multilayer electronic components. The conductive material includes, for example, a base metal. The conductive material includes, for example, nickel (Ni) or copper (Cu). The internal electrode 7 is configured as a sintered body of a conductive paste containing the above-mentioned conductive material. For example, the internal electrode 7 is made of nickel.

[0030] The multiple internal electrodes 7 are arranged at different positions (layers) in the direction D2. The multiple internal electrodes 7 are arranged in the element body 3 so as to face each other at an interval in the direction D2. Adjacent internal electrodes 7 in the direction D2 have opposite polarities. One end of the internal electrode 7 is exposed on a corresponding one of the pair of side surfaces 3e. The internal electrodes 7 include one end exposed on the corresponding one of the side surfaces 3e. The multiple internal electrodes 7 include an internal electrode 7 exposed on one of the pair of side surfaces 3e and an internal electrode 7 exposed on the other of the pair of side surfaces 3e. The internal electrodes 7 exposed on one side surface 3e and the internal electrodes 7 exposed on the other side surface 3e are arranged alternately in the direction D2. The multiple internal electrodes 7 are arranged in the element body 3 so as to be aligned in the direction D2. The internal electrodes 7 are located in a plane substantially parallel to the pair of side surfaces 3a. The direction in which the internal electrodes 7 face each other (direction D2) is orthogonal to the directions parallel to the pair of side surfaces 3a (direction D3 and direction D1).

[0031] When the stacking direction of the multiple dielectric layers is direction D3, the multiple internal electrodes 7 are arranged at different positions (layers) in direction D3. When the stacking direction of the multiple dielectric layers is direction D3, the internal electrodes 7 exposed on one side surface 3e and the internal electrodes 7 exposed on the other side surface 3e are arranged alternately in direction D3. The internal electrodes 7 are located in a plane approximately parallel to another pair of side surfaces 3a. The internal electrodes 7 face each other in direction D3.

[0032] 1, a pair of external electrodes 5 are arranged on both ends of the element body 3 in the direction D1. Each external electrode 5 is arranged on a corresponding side surface 3e of the element body 3. For example, each external electrode 5 is arranged on four side surfaces 3a and one side surface 3e. The external electrodes 5 are formed on five surfaces, i.e., the four side surfaces 3a and one side surface 3e, as well as on the ridges. Each of the pair of external electrodes 5 covers one end of a corresponding one of the multiple internal electrodes 7. Each of the pair of external electrodes 5 is directly connected to the corresponding internal electrode 7. Each external electrode 5 is electrically connected to the corresponding internal electrode 7.

[0033] As shown in FIG. 2, the external electrodes 5 include a first electrode layer E1, a second electrode layer E2, and a third electrode layer E3. The first electrode layer E1 is disposed on the element body 3. As also shown in FIG. 3, the first electrode layer E1 is disposed, for example, on four side surfaces 3a and one side surface 3e. The first electrode layer E1 includes an external conductor. The second electrode layer E2 is disposed on the first electrode layer E1. The third electrode layer E3 is disposed on the second electrode layer E2.

[0034] The first electrode layer E1 includes, for example, a sintered metal layer. As shown in FIG. 4, the first electrode layer E1 includes a glass composition GC and a conductive metal ME. The glass composition GC includes, for example, boron oxide (BO), silicon oxide (SiO), aluminum oxide (AlO), and at least one of strontium oxide (SrO) and barium oxide (BaO). The glass composition GC may include a metal oxide other than boron oxide, silicon oxide, aluminum oxide, strontium oxide, and barium oxide. The metal oxide other than barium oxide includes, for example, at least one of zinc oxide (ZnO) and calcium oxide (CaO). The conductive metal ME includes, for example, copper (Cu). The conductive metal ME may include nickel (Ni) instead of copper. The first electrode layer E1 may include a plurality of voids.

[0035] The second electrode layer E2 includes, for example, a metal plating layer. The second electrode layer E2 may include a nickel plating layer. The second electrode layer E2 may include nickel. The nickel plating layer tends to have better solder leach resistance than the conductive metal ME included in the first electrode layer E1. The second electrode layer E2 covers the first electrode layer E1. The third electrode layer E3 includes, for example, a metal plating layer. The third electrode layer E3 may include a solder plating layer. The solder plating layer may include a tin (Sn) plating layer. The third electrode layer E3 may include tin. The third electrode layer E3 may be a tin-silver alloy (Sn—Ag) plating layer, a tin-bismuth alloy (Sn—Bi) plating layer, or a tin-copper alloy (Sn—Cu) plating layer.

[0036] 2 and 3, the first electrode layer E1 includes a conductor region E11 disposed on the side surface 3e and a conductor region E12 disposed on the side surface 3a. The first electrode layer E1 includes, for example, only the conductor region E11 and the conductor region E12. In a configuration in which the first electrode layer E1 includes only the conductor region E11 and the conductor region E12, for example, the conductor region E11 is integrated with the conductor region E12. For example, when the conductor region E11 includes a first region, the conductor region E12 includes a second region.

[0037] The conductor region E11 is formed on the side surface 3e. The conductor region E11 covers the side surface 3e. The conductor region E11 directly covers the side surface 3e. The conductor region E11 is in direct contact with the side surface 3e. The conductor region E11 is directly connected to one end of the corresponding internal electrode 7. The conductor region E11 is physically and electrically connected to one end of the corresponding internal electrode 7. The conductor region E11 is formed, for example, on the ridge between the side surface 3e and the side surface 3a. The conductor region E11 does not have to be formed on the ridge between the side surface 3e and the side surface 3a. The side surface 3a is not covered by the conductor region E11 and is exposed from the conductor region E11.

[0038] The conductor region E12 is formed on the side surface 3a. The conductor region E12 covers a portion of the side surface 3a. The conductor region E12 directly covers a portion of the side surface 3a. The conductor region E12 is in direct contact with the side surface 3a. The portion of the side surface 3a covered by the conductor region E12 is located closer to the side surface 3e. The remaining portion of the side surface 3a, excluding the portion of the side surface 3a covered by the conductor region E12, is exposed from the conductor region E12. The conductor region E12 is formed on, for example, four side surfaces 3a. The conductor region E12 is formed on, for example, a ridge between adjacent side surfaces 3a. In a configuration in which the conductor region E11 is not formed on the ridge between the side surface 3e and the side surface 3a, the conductor region E12 may be formed on the ridge between the side surface 3e and the side surface 3a.

[0039] The conductor region E11 and the conductor region E12 are, for example, in direct contact with each other. The conductor region E12 is arranged continuously on the conductor region E11. The conductor region E12 is arranged so as to cover at least a portion of the conductor region E11. The conductor region E12 is arranged, for example, so as to cover the entire conductor region E11. The conductor region E12 is located outside the conductor region E11. The conductor region E12 is, for example, located at the outermost position of the first electrode layer E1. The conductor region E11 includes a surface in contact with the element body 3 and a surface in contact with the conductor region E12. The conductor region E12 includes a surface in contact with the conductor region E11 and a surface in contact with the second electrode layer E2. The first electrode layer E1 includes at least the conductor region E12 on the side surface 3a. The first electrode layer E1 includes at least the conductor region E11 and the conductor region E12 on the side surface 3e.

[0040] The length L1 of the conductor region E12 arranged on the side surface 3a arranged to form the mounting surface is, for example, approximately equal to the length L2 of the conductor region E12 arranged on the side surface 3a opposite the side surface 3a arranged to form the mounting surface. The lengths L1 and L2 are, for example, the lengths of the conductor region E12 from the reference plane PL. For example, the lengths L1 and L2 are the maximum lengths from the reference plane PL in a direction perpendicular to the reference plane PL. The reference plane PL includes the side surface 3e.

[0041] The conductor region E12 does not have to cover the conductor region E11. In a configuration in which the conductor region E12 does not cover the conductor region E11, for example, the edge of the conductor region E11 that contacts the element body 3 may contact the edge of the conductor region E12 that contacts the element body 3, and the conductor regions E11 and E12 may be separated from each other on the surface of the element body 3. In a configuration in which the conductor regions E11 and E12 are separated from each other, the first electrode layer E1 may include another conductor region that contacts the conductor regions E11 and E12.

[0042] As described above, the first electrode layer E1 includes a glass composition GC and a conductive metal ME. Therefore, the conductor regions E11 and E12 included in the first electrode layer E1 also include a glass composition GC and a conductive metal ME, although not shown in the figure. The glass composition GC contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 23 mol% or more. The glass composition GC contained in the conductor region E11 is, for example, At least one of strontium oxide or barium oxide: 30 to 40 mol% Boron oxide: 15 to 30 mol% Aluminum oxide: 10 to 20 mol% Silicon oxide: 10 to 25 mol% Other metal oxides: 10-15 mol% Other metal oxides include, for example, zinc oxide. The glass composition GC contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 5 mol% or more and 20 mol% or less. The glass composition GC contained in the conductor region E12 is, for example, At least one of strontium oxide or barium oxide: 25 to 35 mol% Boron oxide: 20-40 mol% Aluminum oxide: 2 to 9 mol% Silicon oxide: 3 to 16 mol% Other metal oxides: 25 to 35 mol% Other metal oxides include, for example, zinc oxide and calcium oxide.

[0043] The glass composition GC contained in the conductor region E11 has a content of, for example, more than 5 vol% and less than 25 vol% with respect to the total of the glass composition GC and the conductive metal ME. The glass composition GC contained in the conductor region E12 has a content of, for example, more than 5 vol% and less than 25 vol% with respect to the total of the glass composition GC and the conductive metal ME. The difference in the content of the glass composition GC between the conductor region E11 and the conductor region E12 is, for example, 0 to 7 vol%.

[0044] The content of the glass composition GC can be determined, for example, as follows. A cross-sectional photograph of the external electrode 5 including the conductor region E11 and the conductor region E12 is obtained. The cross-sectional photograph is, for example, a photograph of a cross section when the external electrode 5 is cut along a plane perpendicular to the side surface 3e. The cross-sectional photograph is, for example, an SEM (scanning electron microscope) photograph. The obtained cross-sectional photograph is subjected to image processing using software to distinguish the boundaries of the glass composition GC and the conductive metal ME, and the total area of ​​the glass composition GC and the total area of ​​the conductive metal ME within the cross-sectional photograph are calculated for each of the conductor region E11 and the conductor region E12. For each of the conductor region E11 and the conductor region E12, the total area of ​​the glass composition GC is divided by the sum of the total area of ​​the glass composition GC and the total area of ​​the conductive metal ME to calculate a value expressed as a percentage. This value may be expressed as the content of the glass composition GC in units of "vol%".

[0045] Next, the contents of SiO2 and Al2O3 in the glass compositions contained in the conductor regions E11 and E12 will be described. The inventors conducted the following test to clarify the SiO2 and Al2O3 contents. In this test, the inventors prepared samples S1 to S12 with different SiO2 and Al2O3 contents, and checked the occurrence of cracks and changes in properties for each sample S1 to S12. The results are shown in Figure 5. Figure 5 is a table showing the test results for each sample.

[0046] Each of samples S1 to S12 is a lot containing multiple specimens. Each of samples S1 to S12 has the same configuration as the multilayer capacitor C1 shown in FIGS. 1 to 4, except for the different composition ratios of the glass composition. Each of samples S1 to S12 has an element body height of 1.6 mm, an element body width of 1.6 mm, and an element body length of 3.2 mm. Each specimen has a capacitance of 10 μF. In each of samples S1 to S12, the glass composition in each of conductor regions E11 and E12 has a content of 15 vol% of the total of the glass composition and the conductive metal.

[0047] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S1 were as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 39mol% Boron oxide: 25mol% Aluminum oxide: 13 mol% Silicon oxide: 10 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 23 mol%. The glass composition contained in the conductor region E12 is Barium oxide: 30 mol% Boron oxide: 25mol% Aluminum oxide: 6 mol% Silicon oxide: 14 mol% Zinc oxide and calcium oxide: 25 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 20 mol%.

[0048] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S2 were as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 39mol% Boron oxide: 25mol% Aluminum oxide: 13 mol% Silicon oxide: 10 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 23 mol%. The glass composition contained in the conductor region E12 is Barium oxide: 29 mol% Boron oxide: 24 mol% Aluminum oxide: 3 mol% Silicon oxide: 6mol% Zinc oxide and calcium oxide: 38 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 9 mol%.

[0049] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S3 were as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 36mol% Boron oxide: 21 mol% Aluminum oxide: 15 mol% Silicon oxide: 15 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 30 mol%. The glass composition contained in the conductor region E12 is Barium oxide: 30 mol% Boron oxide: 25mol% Aluminum oxide: 6 mol% Silicon oxide: 14 mol% Zinc oxide and calcium oxide: 25 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 20 mol%.

[0050] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S4 were as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 36mol% Boron oxide: 21 mol% Aluminum oxide: 15 mol% Silicon oxide: 15 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 30 mol%. The glass composition contained in the conductor region E12 is Barium oxide: 30 mol% Boron oxide: 25mol% Aluminum oxide: 5 mol% Silicon oxide: 10 mol% Zinc oxide and calcium oxide: 30 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 15 mol%.

[0051] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S5 were as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 36mol% Boron oxide: 21 mol% Aluminum oxide: 15 mol% Silicon oxide: 15 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 30 mol%. The glass composition contained in the conductor region E12 is Barium oxide: 29 mol% Boron oxide: 24 mol% Aluminum oxide: 3 mol% Silicon oxide: 6mol% Zinc oxide and calcium oxide: 38 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 9 mol%.

[0052] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S6 are as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 36mol% Boron oxide: 21 mol% Aluminum oxide: 15 mol% Silicon oxide: 15 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 30 mol%. The glass composition contained in the conductor region E12 is Strontium oxide and barium oxide: 34 mol% Boron oxide: 36 mol% Aluminum oxide: 2 mol% Silicon oxide: 3 mol% Zinc oxide and calcium oxide: 25 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 5 mol%.

[0053] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S7 are as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 37mol% Boron oxide: 15mol% Aluminum oxide: 15 mol% Silicon oxide: 23 mol% Zinc oxide: 10 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 38 mol%. The glass composition contained in the conductor region E12 is Barium oxide: 30 mol% Boron oxide: 25mol% Aluminum oxide: 6 mol% Silicon oxide: 14 mol% Zinc oxide and calcium oxide: 25 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 20 mol%.

[0054] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S8 were as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 37mol% Boron oxide: 15mol% Aluminum oxide: 15 mol% Silicon oxide: 23 mol% Zinc oxide: 10 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 38 mol%. The glass composition contained in the conductor region E12 is Barium oxide: 29 mol% Boron oxide: 24 mol% Aluminum oxide: 3 mol% Silicon oxide: 6mol% Zinc oxide and calcium oxide: 38 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 9 mol%.

[0055] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S9 are as follows: The glass composition contained in the conductor region E11 is Barium oxide: 30 mol% Boron oxide: 25mol% Aluminum oxide: 5 mol% Silicon oxide: 10 mol% Zinc oxide and calcium oxide: 30 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 15 mol%. The glass composition contained in the conductor region E12 is Barium oxide: 30 mol% Boron oxide: 25mol% Aluminum oxide: 5 mol% Silicon oxide: 10 mol% Zinc oxide and calcium oxide: 30 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 15 mol%.

[0056] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S10 are as follows: The glass composition contained in the conductor region E11 is Barium oxide: 30 mol% Boron oxide: 25mol% Aluminum oxide: 6 mol% Silicon oxide: 14 mol% Zinc oxide and calcium oxide: 25 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 20 mol%. The glass composition contained in the conductor region E12 is Barium oxide: 30 mol% Boron oxide: 25mol% Aluminum oxide: 5 mol% Silicon oxide: 10 mol% Zinc oxide and calcium oxide: 30 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 15 mol%.

[0057] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S11 are as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 36mol% Boron oxide: 21 mol% Aluminum oxide: 15 mol% Silicon oxide: 15 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 30 mol%. The glass composition contained in the conductor region E12 is Strontium oxide: 36mol% Boron oxide: 21 mol% Aluminum oxide: 15 mol% Silicon oxide: 15 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 30 mol%.

[0058] The glass compositions contained in the conductor regions E11 and E12 of each specimen of sample S12 are as follows: The glass composition contained in the conductor region E11 is Strontium oxide: 36mol% Boron oxide: 21 mol% Aluminum oxide: 15 mol% Silicon oxide: 15 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 30 mol%. The glass composition contained in the conductor region E12 is Strontium oxide: 39mol% Boron oxide: 25mol% Aluminum oxide: 13 mol% Silicon oxide: 10 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 23 mol%.

[0059] The occurrence of cracks is confirmed as follows. Ten specimens were selected for each of samples S1 to S12, and a deflection strength test was performed on each specimen. In the deflection strength test, the specimen was first solder-mounted to the center of a substrate (glass epoxy board). The size of the substrate was 100 mm x 40 mm, and the thickness of the substrate was 1.0 mm. Next, the substrate was placed on two rods arranged parallel to each other with a 90 mm gap between them. The substrate was placed so that the surface on which the specimen was mounted faced downward. Then, a deflection stress was applied to the center of the substrate from the side opposite the surface on which the specimen was mounted, until the amount of deflection of the substrate reached the desired value. In this test, the amount of deflection of the substrate was 15 mm. After the flexure strength test, the specimen soldered to the board is embedded in resin, and the embedded specimen is polished together with the solder and board. An optical microscope is used to check whether cracks have occurred in the specimen element on the polished surface.

[0060] The change in properties is confirmed as follows. Ten specimens are selected from each of samples S1 to S12, and the capacitance of each specimen is measured. A deflection strength test is performed on the specimens whose capacitance has been measured. After the deflection strength test, the capacitance of the specimen is measured again. Based on the capacitance measurement results, the rate of change in capacitance before and after the deflection strength test is determined. Specimens whose rate of change in capacitance is less than 12.5% ​​are judged to have a "good" state of change in characteristics. Specimens whose rate of change in capacitance is 12.5% ​​or more are judged to have a "poor" state of change in characteristics. Multilayer capacitors whose rate of change in capacitance is less than 12.5% ​​are likely to be suitable for practical use.

[0061] As a result of the above-mentioned test, as shown in Fig. 5, no cracks were observed in any of the specimens S1 to S10. In contrast, cracks were observed in four or more specimens of specimen S11. In specimen S12, cracks were observed in three or fewer specimens. As a result of the above-mentioned tests, as shown in Fig. 5, no change in characteristics was observed in any of the specimens S1 to S8 and S11 to S12. In contrast, in specimen S9, changes in characteristics were observed in four or more specimens. In specimen S10, changes in characteristics were observed in three or fewer specimens.

[0062] Next, the content of the glass composition in each of the conductor region E11 and the conductor region E12 will be described. The present inventors conducted the following test to determine the content of the glass composition in each of the conductor regions E11 and E12. In this test, the present inventors prepared samples S13 to S21 with different contents of the glass composition, and checked the density of the first electrode layer E1 and the plating adhesion to the first electrode layer E1 for each of the samples S13 to S21. The results are shown in Figure 6. Figure 6 is a chart showing the test results for each sample.

[0063] Each of samples S13 to S21 is a lot containing multiple specimens. Each of samples S13 to S21 has the same configuration as the multilayer capacitor C1 shown in FIGS. 1 to 4, except for the difference in the content of the glass composition. Each of samples S13 to S21 has an element body height of 1.6 mm, an element body width of 1.6 mm, and an element body length of 3.2 mm. The capacitance of each specimen is 10 μF. In each of the samples S13 to S21, the glass composition contained in the conductor region E11 was Strontium oxide: 36mol% Boron oxide: 21 mol% Aluminum oxide: 15 mol% Silicon oxide: 15 mol% Zinc oxide: 13 mol% The glass composition contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 30 mol%. In each of the samples S13 to S21, the glass composition contained in the conductor region E12 was Barium oxide: 30 mol% Boron oxide: 25mol% Aluminum oxide: 5 mol% Silicon oxide: 10 mol% Zinc oxide and calcium oxide: 30 mol% The glass composition contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 15 mol%.

[0064] In each specimen of sample S13, the content of the glass composition in the conductor region E11 was 15 vol% relative to the total of the glass composition and the conductive metal, and the content of the glass composition in the conductor region E12 was 15 vol% relative to the total of the glass composition and the conductive metal. In each specimen of sample S14, the content of the glass composition relative to the total of the glass composition and the conductive metal in the conductor region E11 was 8 vol %, and the content of the glass composition relative to the total of the glass composition and the conductive metal in the conductor region E12 was 15 vol %. In each specimen of sample S15, the content of the glass composition relative to the total of the glass composition and the conductive metal in the conductor region E11 was 8 vol %, and the content of the glass composition relative to the total of the glass composition and the conductive metal in the conductor region E12 was 6 vol %. In each specimen of sample S16, the content of the glass composition in the conductor region E11 was 6 vol% relative to the total of the glass composition and the conductive metal, and the content of the glass composition in the conductor region E12 was 15 vol% relative to the total of the glass composition and the conductive metal. In each specimen of sample S17, the content of the glass composition relative to the total of the glass composition and the conductive metal in the conductor region E11 was 8 vol %, and the content of the glass composition relative to the total of the glass composition and the conductive metal in the conductor region E12 was 5 vol %. In each specimen of sample S18, the content of the glass composition in the conductor region E11 was 15 vol% relative to the total of the glass composition and the conductive metal, and the content of the glass composition in the conductor region E12 was 2 vol% relative to the total of the glass composition and the conductive metal. In each specimen of sample S19, the content of the glass composition in the conductor region E11 was 5 vol% relative to the total of the glass composition and the conductive metal, and the content of the glass composition in the conductor region E12 was 15 vol% relative to the total of the glass composition and the conductive metal. In each specimen of sample S20, the content of the glass composition relative to the total of the glass composition and the conductive metal in the conductor region E11 was 2 vol %, and the content of the glass composition relative to the total of the glass composition and the conductive metal in the conductor region E12 was 15 vol %. In each specimen of sample S21, the content of the glass composition in the conductor region E11 was 25 vol% relative to the total of the glass composition and the conductive metal, and the content of the glass composition in the conductor region E12 was 25 vol% relative to the total of the glass composition and the conductive metal.

[0065] The compactness is confirmed as follows. Ten specimens are selected for each of samples S13 to S21, and each specimen is cut to obtain a cross-sectional photograph of the first electrode layer E1. The cross-sectional photograph is, for example, a photograph of a cross section of the first electrode layer E1 cut along a plane perpendicular to the side surface 3a and the side surface 3e. The obtained cross-sectional photograph is subjected to image processing using software to identify the boundaries of the voids contained in the first electrode layer E1, and the total area of ​​the voids contained in the conductive region E11 and the total area of ​​the voids contained in the conductive region E12 are calculated. The total area of ​​the voids contained in the conductive region E11 is divided by the area of ​​the conductive region E11 to obtain the proportion of voids in the conductive region E11. The total area of ​​the voids contained in the conductive region E12 is divided by the area of ​​the conductive region E12 to obtain the proportion of voids in the conductive region E12. A configuration in which the proportion expressed as a percentage is 3% or less is determined to have high density. A configuration in which the proportion expressed as a percentage is greater than 3% is determined to have low density. A configuration in which the proportion is 3% or less tends to increase reliability, for example.

[0066] The plating adhesion is confirmed as follows. Ten specimens are selected from each of samples S13 to S21, and the surface of the external electrode 5 is observed for each specimen. A specimen in which the second electrode layer E2 (third electrode layer E3) is formed over 99% or more of the surface area of ​​the external electrode 5 is determined to have high plating adhesion. A specimen in which the second electrode layer E2 (third electrode layer E3) is formed over less than 99% of the surface area of ​​the external electrode 5 is determined to have low plating adhesion.

[0067] As a result of the above-mentioned tests, as shown in Fig. 6, no specimens with low density were found in samples S13 to S15 and S21. In sample S16, no specimens with low density in each of the conductive regions E11 and E12 were found, but one specimen was found in which a void existed near the boundary between the conductive regions E11 and E12. In samples S17 and S18, four specimens with low density in the conductive region E12 were found. In samples S19 and S20, four specimens with low density in the conductive region E11 were found. No specimens with poor plating adhesion were found among samples S13 to S20, whereas sample S21 had three or fewer specimens with poor plating adhesion.

[0068] Next, the configurations of multilayer capacitors C1 according to several modified examples of this embodiment will be described with reference to Figs. 7 to 9. Fig. 7 is a diagram showing a cross-sectional configuration of a multilayer capacitor according to one modified example of this embodiment. Fig. 8 is a diagram showing a first electrode layer. Fig. 9 is a diagram showing a cross-sectional configuration of a multilayer capacitor according to another modified example of this embodiment. The multilayer capacitors C1 according to these modified examples are generally similar to or the same as the multilayer capacitor C1 described above, but these modified examples differ from the embodiment described above in terms of the configuration of the conductor region E12. Below, the differences between these modified examples and the embodiment described above will be mainly described.

[0069] As shown in Figures 7 and 8, the conductor region E12 is arranged so as to cover only a portion of the conductor region E11. The conductor region E12 is arranged on the element body 3 and the conductor region E11 so as to continuously cover only a portion of the side surface 3e, only a portion of one side surface 3a adjacent to the side surface 3e, and only a portion of each of a pair of side surfaces 3a adjacent to the side surface 3e and facing each other. The element body 3 includes three side surfaces 3a on which the conductor region E12 is arranged and one side surface 3a on which the conductor region E12 is not arranged. The side surface 3a opposite to the one side surface 3a on which the conductor region E12 is not arranged is arranged so as to constitute the mounting surface. In other words, the conductor region E12 is arranged on the side surface 3a arranged so as to constitute the mounting surface.

[0070] The length L1 of the conductor region E12 arranged on the side surface 3a arranged to form the mounting surface is, for example, greater than the length L2 of the conductor region E12 arranged on the side surface 3a opposite the side surface 3a arranged to form the mounting surface. In this modification, the conductor region E12 is not arranged on the side surface 3a opposite the side surface 3a arranged to form the mounting surface. Therefore, the length L2 is zero, and the length L1 is greater than the length L2. Because the length L2 is zero, it is not shown.

[0071] The area of ​​each of a pair of opposing side surfaces 3a that is covered by the conductor region E12 is located closer to the side surface 3e and the side surface 3a that is arranged to form the mounting surface. The area of ​​the side surface 3e that is covered by the conductor region E12 is located closer to the side surface 3a that is arranged to form the mounting surface. The area of ​​the side surface 3a that is arranged to form the mounting surface that is covered by the conductor region E12 is located closer to the side surface 3e. The conductor region E11 includes an area that is covered by the conductor region E12 and an area that is exposed from the conductor region E12. The area of ​​the conductor region E11 that is covered by the conductor region E12 is located closer to the side surface 3a that is arranged to form the mounting surface.

[0072] The second electrode layer E2 is disposed on the conductor region E11E1 and the conductor region E12. The second electrode layer E2 covers the entire conductor region E12 and also covers the entire portion of the conductor region E11 that is exposed from the conductor region E12. The second electrode layer E2 is in contact with the entire conductor region E12 and also in contact with the entire portion of the conductor region E11 that is exposed from the conductor region E12. The second electrode layer E2 is in direct contact with the conductor region E11 and the conductor region E12.

[0073] 9, the conductor region E12 is arranged so as to cover only a portion of the conductor region E11. The conductor region E12 is arranged on the element body 3 and on the conductor region E11 so as to continuously cover only a portion of the side surface 3a arranged to form the mounting surface and only the ridge between this side surface 3a and the side surface 3e. The conductor region E12 may be arranged on the element body 3 so as to cover only a portion of the side surface 3a arranged to form the mounting surface. The conductor region E12 may also be arranged on the element body 3 so as to cover the side surface 3a arranged to form the mounting surface and each of the ridges between a pair of opposing side surfaces 3a.

[0074] If the conductor region E12 tends to peel off from the element body 3 when an external force acts on the first electrode layer E1, stress is less likely to concentrate on the edge of the conductor region E12. In other words, cracks are less likely to occur in the element body 3. Therefore, it is required that the conductor region E12 easily peels off from the element body 3 when an external force acts on the first electrode layer E1. If the conductor region E11 tends to peel off from the element body 3, the connection between the internal electrode 7 and the conductor region E11 may be severed. In a multilayer capacitor C1 in which the connection between the internal electrode 7 and the conductor region E11 is severed, the characteristics will deteriorate. Therefore, even when an external force acts on the first electrode layer E1, the conductor region E11 is required to be resistant to peeling off from the element body 3.

[0075] The glass composition GC contained in the first electrode layer E1 increases the bonding strength between the first electrode layer E1 and the element body 3. Of the oxides contained in the glass composition GC, SiO2 and Al2O3 affect the bonding strength between the first electrode layer E1 and the element body 3. A configuration in which the first electrode layer E1 includes a glass composition GC in which the total content of SiO2 and Al2O3 is 30 mol% or more maintains the bonding strength between the first electrode layer E1 and the element body 3. In contrast, a configuration in which the first electrode layer E1 includes a glass composition GC in which the total content of SiO2 and Al2O3 is 5 to 25 mol% reduces the bonding strength between the first electrode layer E1 and the element body 3.

[0076] In the multilayer capacitor C1, the glass composition GC contained in the conductor region E12 has a total content of SiO2 and Al2O3 of 5 to 25 mol%. Therefore, when an external force acts on the first electrode layer E1, the conductor region E12 is likely to peel off from the element body 3. Stress is unlikely to concentrate on the edge of the conductor region E12 on the side surface 3a. As a result, the multilayer capacitor C1 suppresses the occurrence of cracks in the element body 3. In the multilayer capacitor C1, the glass composition GC contained in the conductor region E11 has a total content of SiO2 and Al2O3 of 30 mol% or more. Therefore, even if an external force acts on the first electrode layer E1, the conductor region E11 is unlikely to peel off from the element body 3. As a result, the multilayer capacitor C1 is prevented from deteriorating in characteristics.

[0077] In the multilayer capacitor C1, the content of the glass composition GC in the conductor region E12 may be more than 5 vol % and less than 25 vol % with respect to the total of the glass composition GC and the conductive metal ME. In the conductor region E12, a configuration in which the content of the glass composition GC is greater than 5 vol % with respect to the total of the glass composition GC and the conductive metal ME ensures the density of the conductor region E12. In the conductor region E12, a configuration in which the glass composition GC has a content of less than 25 vol% relative to the total of the glass composition GC and the conductive metal ME can ensure plating adhesion even when the second electrode layer E2 is formed in the conductor region E12.

[0078] In the multilayer capacitor C1, the content of the glass composition GC in the conductor region E11 may be more than 5 vol % and less than 25 vol % with respect to the total of the glass composition GC and the conductive metal ME. In the conductor region E11, the content of the glass composition GC is greater than 5 vol % relative to the total of the glass composition GC and the conductive metal ME, ensuring the density of the conductor region E11. In the conductor region E11, a configuration in which the glass composition GC has a content of less than 25 vol% relative to the total of the glass composition GC and the conductive metal ME can ensure plating adhesion even when the second electrode layer E2 is formed on the conductor region E11, as with the conductor region E12. Plating adhesion has not been confirmed for a configuration in which the second electrode layer E2 is formed on the conductor region E11. However, based on the confirmation results for the above-mentioned samples S4 to S8, it is understood that similar results can be obtained even when the second electrode layer E2 is formed on the conductor region E11.

[0079] In the multilayer capacitor C1, the content of the glass composition GC in each of the conductor regions E11 and E12 may be greater than 5 vol % and less than 25 vol % with respect to the total of the glass composition GC and the conductive metal ME. In each of the conductor regions E11 and E12, a configuration in which the glass composition GC has a content greater than 5 vol% relative to the total of the glass composition GC and the conductive metal ME ensures the density of each of the conductor regions E11 and E12. A configuration in which the glass composition GC has a content of less than 25 vol% relative to the total of the glass composition GC and the conductive metal ME in each of the conductor regions E11 and E12 can ensure plating adhesion even when the second electrode layer E2 is formed in the conductor regions E11 and E12.

[0080] In the multilayer capacitor C1, the difference in content of the glass composition GC between the conductor region E11 and the conductor region E12 may be 0 to 7 vol %. A configuration in which the difference in content of the glass composition GC between the conductor region E11 and the conductor region E12 is 0 to 7 vol % further ensures the density of the first electrode layer E1.

[0081] In the multilayer capacitor C1, the conductor region E12 may be disposed continuously on the conductor region E11. In a configuration in which the conductor region E12 is disposed continuously on the conductor region E11, the conductor region E11 is even less likely to peel off from the element body 3.

[0082] In the multilayer capacitor C1, the conductor region E12 may be disposed so as to cover the entire conductor region E11. In a configuration in which the conductor region E12 is arranged so as to cover the entire conductor region E11, the conductor region E12 is even less likely to peel off from the element body 3.

[0083] In the multilayer capacitor C1, the length L1 of the conductor region E12 may be greater than the length L2 of the conductor region E12. The configuration in which the length L1 of the conductor region E12 is greater than the length L2 of the conductor region E12 can cause directionality when mounting the multilayer capacitor C1, and therefore, in this configuration, one of the pair of side surfaces 3a can be reliably positioned to form the mounting surface.

[0084] In the multilayer capacitor C1, the conductor region E12 does not necessarily have to be disposed on the side surface 3a opposite to the side surface 3a disposed so as to form the mounting surface. In a configuration in which the conductor region E12 is not arranged on the side surface 3a opposite the side surface 3a arranged to form the mounting surface, one of the pair of side surfaces 3a can be more reliably arranged to form the mounting surface.

[0085] Although the embodiments of the present invention have been described above, the present invention is not necessarily limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present invention.

[0086] In the present embodiment and the modified examples, a multilayer capacitor has been described as an example of an electronic component, but applicable electronic components are not limited to multilayer capacitors. Applicable electronic components include, for example, multilayer electronic components such as multilayer inductors, multilayer varistors, multilayer piezoelectric actuators, multilayer thermistors, multilayer solid-state battery components, and multilayer composite components, as well as electronic components other than multilayer electronic components.

[0087] As can be understood from the above description of the embodiments and modifications, the present specification includes disclosure of the following aspects. (Appendix 1) an element body including a first side surface and a pair of second side surfaces adjacent to the first side surface and facing each other; an internal conductor disposed within the element body and including an end exposed at the first side surface; an outer conductor disposed on the element body and including a glass composition containing SiO2 and Al2O3 and a conductive metal; The outer conductor is a first region disposed on the first side surface and connected to the end of the inner conductor; a second region disposed on at least one of the pair of second side surfaces, the glass composition contained in the first region has a total content of SiO2 and Al2O3 of 23 mol% or more, The glass composition contained in the second region has a total content of SiO2 and Al2O3 of 5 mol% or more and 20 mol% or less. (Appendix 2) 2. The electronic component of claim 1, wherein the glass composition contained in the first region has a content greater than 5 vol% and less than 25 vol% of the glass composition and the conductive metal combined together. (Appendix 3) 3. The electronic component according to claim 1, wherein the glass composition contained in the second region has a content greater than 5 vol% and less than 25 vol% with respect to the total of the glass composition and the conductive metal. (Appendix 4) 2. The electronic component of claim 1, wherein the glass composition contained in each of the first region and the second region has a content greater than 5 vol% and less than 25 vol% of the glass composition relative to a total content of the glass composition and the conductive metal. (Appendix 5) 5. The electronic component according to claim 4, wherein the difference in content of the glass composition between the first region and the second region is 0 to 7 vol %. (Appendix 6) 6. The electronic component according to any one of claims 1 to 5, wherein the second region is disposed continuously on the first region. (Appendix 7) 7. The electronic component according to claim 6, wherein the second region is arranged to cover the entire first region. (Appendix 8) An electronic component described in any one of Appendices 1 to 7, wherein the length of the second region arranged on one of the pair of second side surfaces is greater than the length of the second region arranged on the other of the pair of second side surfaces. (Appendix 9) 9. The electronic component of claim 8, wherein the second region is not disposed on the other of the pair of second side surfaces. [Explanation of symbols]

[0088] 3…body, 3a, 3e…side, 5…external electrode, 7…internal electrode, C1…complex, E1…first electrode layer, E11, E12…conductor field, E2…second electrode layer, E3…third electrode layer, GC…galactose composition, ME…conductive metal.

Claims

1. an element body including a first side surface and a pair of second side surfaces adjacent to the first side surface and facing each other; an internal conductor disposed within the element body and including an end exposed at the first side surface; The element body is provided with a SiO ２ and Al ２ O ３ and an outer conductor comprising a glass composition comprising the glass composition and a conductive metal, The outer conductor is a first region disposed on the first side surface and connected to the end of the inner conductor; a second region disposed on at least one of the pair of second side surfaces, The glass composition contained in the first region contains 23 mol % or more of SiO ２ and Al ２ O ３ and the total content of The glass composition contained in the second region contains 5 mol % or more and 20 mol % or less of SiO ２ and Al ２ O ３ and an electronic component having a total content of

2. The electronic component according to claim 1 , wherein in the first region, the glass composition has a content of more than 5 vol % and less than 25 vol % with respect to the total of the glass composition and the conductive metal.

3. The electronic component according to claim 1 , wherein in the second region, the glass composition has a content of more than 5 vol % and less than 25 vol % with respect to the total of the glass composition and the conductive metal.

4. 2. The electronic component according to claim 1, wherein in each of the first region and the second region, the glass composition has a content greater than 5 vol% and less than 25 vol% with respect to a total of the glass composition and the conductive metal.

5. 5. The electronic component according to claim 4, wherein the difference in content of the glass composition between the first region and the second region is 0 to 7 vol %.

6. The electronic component according to claim 1 , wherein the second region is disposed contiguously on the first region.

7. The electronic component according to claim 6 , wherein the second region is disposed so as to cover the entire first region.

8. The electronic component according to claim 1 , wherein a length of the second region disposed on one of the pair of second side surfaces is greater than a length of the second region disposed on the other of the pair of second side surfaces.

9. The electronic component according to claim 8 , wherein the second region is not disposed on the other of the pair of second side surfaces.

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