Semiconductor crystal manufacturing apparatus

Abstract

To provide a semiconductor crystal manufacturing apparatus capable of performing heating for a long time by an induction heating coil more stably than before.SOLUTION: A semiconductor crystal manufacturing apparatus (1) in which a seed crystal (5) made of a semiconductor is disposed on a base (9) disposed in a vacuum container (6), and a raw material gas (3) of the semiconductor is supplied to the seed crystal to grow the crystal on a surface of the seed crystal, the semiconductor crystal manufacturing apparatus (1) comprising: A heating device (13, 14) including an induction-heating coil (13a, 14a) that heats a heated object (7, 10, 20) disposed in a vacuum vessel, and a radiation suppression member (15) that is disposed between the heated object and the induction-heating coil and suppresses radiation from the heated object heated by induction-heating of the induction-heating coil to the induction-heating coil are provided, and the radiation suppression member is a fibrous member disposed so as to surround the heated object.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor crystal manufacturing apparatus that manufactures semiconductor crystals by growing crystals on the surface of a seed crystal made of a semiconductor. [Background technology]

[0002] A semiconductor crystal manufacturing apparatus is known in which a seed crystal made of a semiconductor is placed on a pedestal placed in a vacuum chamber, and a semiconductor raw material gas is supplied from below the seed crystal to grow a semiconductor crystal on the surface of the seed crystal (see, for example, Patent Document 1). Specifically, the semiconductor crystal manufacturing apparatus described in Patent Document 1 has a heating device. The heating device includes an induction heating coil that inductively heats a heating object placed in the vacuum chamber. A radiation suppression member is disposed between the heating object and the induction heating coil to suppress radiation from the heating object heated by induction heating to the induction heating coil.

[0003] In the semiconductor crystal manufacturing apparatus described in Patent Document 1, a radiation suppressing member is placed between the induction heating coil and the object to be heated. Therefore, even if the object to be heated is heated by the induction heating coil during crystal growth of the semiconductor crystal, causing radiation, it is possible to block the radiation toward the induction heating coil. This makes it possible to suppress damage to the induction heating coil and to stably perform heating using the induction heating coil for long periods of time. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 6798139 Summary of the Invention [Problem to be solved by the invention]

[0005] In the semiconductor crystal manufacturing apparatus described in Patent Document 1, the radiation suppression member is a radiation suppression tube, i.e., a circular tubular member made of a material that can suppress radiation from the heated object (e.g., a ceramic material such as alumina or mullite). Such a radiation suppression tube is a rigid member made of a solid bulk material, making it difficult to adapt to complex shapes. In addition, the shape of the radiation suppression tube cannot follow the thermal expansion and deformation of the heated object, raising concerns that it may damage adjacent furnace components (e.g., a protective member for an induction heating coil or the heated object).

[0006] The present disclosure has been made in consideration of the circumstances exemplified above, etc. That is, the present disclosure provides, for example, a semiconductor crystal manufacturing apparatus that is capable of performing heating for a long period of time using an induction heating coil more stably than conventional methods. [Means for solving the problem]

[0007] According to one aspect of the present disclosure, a semiconductor crystal manufacturing apparatus (1) includes: a seed crystal (5) made of a semiconductor placed on a pedestal (9) arranged in a vacuum vessel (6); and a semiconductor source gas (3) is supplied to the seed crystal to grow a crystal on a surface of the seed crystal. a heating device (13, 14) including an induction heating coil (13a, 14a) for heating a heating object (7, 10, 20) disposed in the vacuum vessel; a radiation suppression member (15) disposed between the object to be heated and the induction heating coil, for suppressing radiation from the object to be heated by induction heating of the induction heating coil to the induction heating coil; Equipped with The radiation suppressing member is a fibrous member that is arranged to surround the object to be heated.

[0008] In addition, in each section of the application documents, each element may be assigned a reference symbol in parentheses. However, such reference symbols merely indicate an example of the correspondence between the element and the specific means described in the embodiments below. Therefore, the present disclosure is not limited in any way by the above-mentioned reference symbols. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a side cross-sectional view showing a schematic configuration of a semiconductor crystal manufacturing apparatus according to an embodiment of the present disclosure. [Figure 2] FIG. 10 is a side cross-sectional view showing a schematic configuration of a semiconductor crystal manufacturing apparatus according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0010] (Embodiment) Hereinafter, exemplary embodiments and specific examples of the present disclosure will be described with reference to the drawings as appropriate.

[0011] 1 shows a schematic cross-sectional view of a SiC single crystal manufacturing apparatus 1 as a semiconductor crystal manufacturing apparatus according to this embodiment. The configuration of the SiC single crystal manufacturing apparatus 1 will be described below with reference to this figure.

[0012] The SiC single crystal manufacturing apparatus 1 supplies a source gas 3 through an inlet 2 provided at the bottom. The source gas 3 contains silicon and carbon, which are the raw materials for SiC, together with a carrier gas. For example, the source gas 3 includes a mixed gas of a silane-based gas such as silane, which serves as a silicon-containing gas, and a hydrocarbon-based gas such as propane, which serves as a carbon-containing gas. The SiC single crystal manufacturing apparatus 1 also discharges unreacted gases and the like through an outlet 4. In this way, the SiC single crystal manufacturing apparatus 1 supplies the source gas 3 from below the seed crystal 5, which is made of a SiC single crystal substrate placed inside the apparatus, thereby growing a SiC single crystal 20 on the seed crystal 5.

[0013] The SiC single crystal manufacturing apparatus 1 is equipped with a vacuum vessel 6, a reaction vessel 7, an insulating material 8, a base 9, a guide 10, a peripheral insulating material 11, a rotary lifting mechanism 12, a first heating device 13, a second heating device 14, and a radiation suppression member 15.

[0014] Vacuum vessel 6 is made of quartz glass or the like, has a hollow cylindrical shape, and is configured to allow the introduction and discharge of source gas 3, accommodate other components of SiC single crystal manufacturing apparatus 1, and reduce the pressure in the internal space by evacuating. An inlet 2 for source gas 3 is provided at the bottom of vacuum vessel 6. Meanwhile, an outlet 4 for source gas 3 is provided at a location outside first heating device 13 and second heating device 14, such as at the center or lower position of the side wall.

[0015] The reaction vessel 7 extends from the inlet 2 toward the pedestal 9. The reaction vessel 7 is made of, for example, graphite or graphite whose surface is coated with a high-melting-point metal carbide such as TaC (tantalum carbide), and is disposed upstream of the pedestal 9 in the flow path of the source gas 3. The reaction vessel 7 thermally decomposes the source gas 3 while removing particles contained in the source gas 3 before the source gas 3 supplied from the inlet 2 is guided to the seed crystal 5. The source gas 3 thermally decomposed in the reaction vessel 7 is supplied to the seed crystal 5, and carbon and silicon atoms are supersaturated on the surface of the seed crystal 5, whereby SiC single crystal 20 is precipitated on the surface of the seed crystal 5.

[0016] Specifically, the reaction vessel 7 has a structure including a cylindrical member having a hollow portion, for example, a hollow cylindrical member, and is disposed coaxially with the vacuum vessel 6. In the case of the present embodiment, the reaction vessel 7 is connected to the inlet 2 by narrowing the inner diameter thereof on the side of the inlet 2 to match the inlet 2, and the source gas 3 passes through the hollow portion of the reaction vessel 7 and is then supplied to the surface of the seed crystal 5. In addition, the reaction vessel 7 has a flange shape (L-shape) with an expanded outer diameter on the side of the pedestal 9, and is structured to facilitate the introduction of exhaust gas toward the periphery and to protect the heat insulating material 8 from contact with the source gas 3.

[0017] The heat insulating material 8 suppresses the diffusion of heat in the outer periphery of the reaction vessel 7, has a cylindrical shape, and is arranged coaxially with the vacuum vessel 6 and the reaction vessel 7, surrounding the outer periphery of the reaction vessel 7. The heat insulating material 8 is made of, for example, graphite or graphite whose surface is coated with a high-melting point metal carbide such as TaC (tantalum carbide).

[0018] Pedestal 9 is arranged coaxially with the central axis of reaction vessel 7 and is made of, for example, graphite or graphite whose surface is coated with a high-melting-point metal carbide such as TaC (tantalum carbide). Seed crystal 5 is attached and held on this pedestal 9, and SiC single crystal 20 is grown on the surface of seed crystal 5. Pedestal 9 has a shape corresponding to the shape of seed crystal 5 to be grown, for example, a disk shape, and is connected to rotary pulling mechanism 12 on the surface opposite to the surface on which seed crystal 5 is placed.

[0019] The dimensions of the pedestal 9, for example, the outer diameter of the pedestal 9 when the pedestal 9 is disk-shaped, are set to be equal to or larger than the inner diameter of the hollow part of the reaction vessel 7 on the pedestal 9 side, and are set to be, for example, 6 inches. Therefore, the source gas 3 supplied through the hollow part of the reaction vessel 7 collides with the center part of the pedestal 9, that is, the center part of the seed crystal 5, and is caused to flow from there toward the outer periphery of the seed crystal 5.

[0020] The guide 10 is disposed coaxially with the central axis of the vacuum vessel 6 so as to surround the periphery of the pedestal 9, and extends downward from the upper surface of the vacuum vessel 6. The guide 10 is also made of, for example, graphite or graphite coated with a high-melting-point metal carbide such as TaC (tantalum carbide). The guide 10 keeps the outer peripheral surface of the SiC single crystal 20 at a predetermined temperature when the pedestal 9, the seed crystal 5, and the SiC single crystal 20 are pulled up as the SiC single crystal 20 grows, and in this embodiment, the inner diameter of the guide 10 is set to be larger than the outer diameter of the pedestal 9 by a predetermined dimension. This allows the SiC single crystal 20 to be pulled up while maintaining a predetermined gap from the guide 10.

[0021] Furthermore, the tip of guide 10 closest to reaction vessel 7 is flanged (L-shaped), and is structured to protect peripheral insulation 11 from contact with source gas 3. A predetermined gap is provided between the tip of guide 10 closest to reaction vessel 7 and the tip of reaction vessel 7 closest to guide 10. A gas exhaust port is formed at the L-shaped tip portions of reaction vessel 7 and guide 10. That is, source gas 3 and the like are caused to flow through this gap into a space in vacuum vessel 6 outside first heating device 13 and second heating device 14, and are then exhausted through exhaust port 4.

[0022] The peripheral heat insulating material 11 is disposed so as to surround the outer periphery of the guide 10, and suppresses heat diffusion in the outer periphery direction from the guide 10. This peripheral heat insulating material 11 is also made of, for example, graphite, or graphite whose surface is coated with a high-melting point metal carbide such as TaC (tantalum carbide).

[0023] The rotary pulling mechanism 12 is configured to include a pipe 12a, a main body 12b, and a bellows 12c. One end of the pipe 12a is connected to the surface of the base 9 opposite to the surface on which the seed crystal 5 is attached, and the other end is connected to the main body 12b of the rotary pulling mechanism 12. The pipe 12a is made of, for example, stainless steel. The main body 12b plays a role in introducing a purge gas 16, which serves as a diluent gas, from between the pipe 12a and the bellows 12c while rotating and pulling up the pipe 12a. The bellows 12c forms an introduction space for the purge gas 16, is arranged to surround the periphery of the pipe 12a, and is capable of expanding and contracting as the pipe 12a is pulled up.

[0024] With this configuration, the main body 12b can rotate and pull up the pipe 12a while introducing a purge gas 16 between the pipe 12a and the bellows 12c. This allows the pedestal 9, seed crystal 5, and SiC single crystal 20 to be rotated and pulled up along with the pipe 12a, ensuring a desired temperature distribution on the growth surface of the SiC single crystal 20, and as the SiC single crystal 20 grows, the temperature of the growth surface can be constantly adjusted to a temperature suitable for growth. Furthermore, since the purge gas 16 is introduced through the gaps between the pedestal 9 or seed crystal 5 and the guide 10, it is possible to further prevent the source gas 3 from entering these gaps. The purge gas 16 is a gas for diluting the source gas 3, and is, for example, an inert gas such as Ar or He, or an etching gas such as H or HCl.

[0025] The first heating device 13 and the second heating device 14 are composed of induction heating coils, heaters, etc. The first heating device 13 is arranged to surround the outer periphery of the reaction vessel 7 and the thermal insulator 8. The second heating device 14 is arranged to surround the outer periphery of the base 9, which in this embodiment surrounds the outer periphery of the guide 10 and the outer periphery thermal insulator 11. The first heating device 13 and the second heating device 14 are configured to be able to independently control the temperature, and the temperatures of the parts to be heated by the first heating device 13 and the second heating device 14 can be independently and precisely controlled. That is, by heating the reaction vessel 7 with the first heating device 13, the reaction vessel 7 can be controlled to a temperature at which the source gas 3 can be thermally decomposed. Furthermore, by heating the guide 10 and the growth surface of the SiC single crystal 20 with the second heating device 14, the temperature distribution on the growth surface of the SiC single crystal 20 can be adjusted to a state suitable for the growth of the SiC single crystal 20.

[0026] For example, in this embodiment, the first heating device 13 is configured with a first induction heating coil 13a. Similarly, the second heating device 14 is configured with a second induction heating coil 14a. A first coil protective tube 13b is disposed so as to surround the first induction heating coil 13a, and a second coil protective tube 14b is disposed so as to surround the second induction heating coil 14a. This prevents corrosion of the first induction heating coil 13a and the second induction heating coil 14a. The first coil protective tube 13b and the second coil protective tube 14b are formed of a transparent material such as a quartz tube. As a corrosion-resistant structure for the first induction heating coil 13a, in addition to the structure of covering the first induction heating coil 13a with the first coil protective tube 13b, a corrosion-resistant coating may be applied to the first induction heating coil 13a. Examples of the corrosion-resistant coating that can be used include a SiC coating and a SiO2 coating. The same applies to the corrosion-resistant structure of the second induction heating coil 14a.

[0027] The radiation suppressing member 15 is disposed between the object to be heated and the first induction heating coil 13a or the second induction heating coil 14a so as to suppress radiation from the object to be heated to the first induction heating coil 13a or the second induction heating coil 14a. In this embodiment, the radiation suppressing member 15 includes a first radiation suppressing member 15a disposed between the first heating device 13 and the reaction vessel 7 or the heat insulating material 8, and a second radiation suppressing member 15b disposed between the second heating device 14 and the SiC single crystal 20 or the guide 10, etc.

[0028] First radiation suppressing member 15a suppresses radiation from reaction vessel 7, which is heated by first heating device 13, to first coil protecting tube 13b, with reaction vessel 7 serving as the heated object. First radiation suppressing member 15a covers first coil protecting tube 13b along the inner wall surface of first coil protecting tube 13b from its tip in the same direction as the growth direction of SiC single crystal 20 to the bottom surface of vacuum vessel 6. That is, first radiation suppressing member 15a is disposed across the entire width of first heating device 13 in the axial direction so as to shield the entire inner surface of first heating device 13 facing the heated object from radiation from the heated object along the axial direction. The "axial direction" refers to the up-down direction in the drawing along the central axis of vacuum vessel 6, reaction vessel 7, and the like, which are generally cylindrical and arranged coaxially.

[0029] On the other hand, second radiation suppressing member 15b suppresses radiation from SiC single crystal 20 and guide 10 to second coil protecting tube 14b, with SiC single crystal 20 and guide 10 heated by second heating device 14 as the heated object. Second radiation suppressing member 15b covers second coil protecting tube 14b along the inner wall surface of second coil protecting tube 14b from its tip position in the same direction as the growth direction of SiC single crystal 20 to the upper surface of vacuum vessel 6. In other words, second radiation suppressing member 15b is disposed across the entire width of second heating device 14 in the axial direction so as to shield the entire inner surface of second heating device 14 on the heated object side from radiation from the heated object over the entire axial direction.

[0030] The radiation suppression member 15 may be made of any material capable of suppressing radiation from the heated object. It is preferable that the material be made of a material that is discharge-resistant even at high temperatures and has lower conductivity than a conductor. Furthermore, it is even more preferable that the material be made of a material with high magnetic permeability that allows the heated object to be heated without being subjected to induction heating by the first induction heating coil 13a or the second induction heating coil 14a. Materials capable of suppressing radiation from the heated object include materials that can block infrared radiation from the heated object, such as materials that are not translucent, such as transparent materials, or materials with relatively low infrared transmittance. Furthermore, since arc discharge can occur when induction heating is performed using a high-frequency coil as the induction heating coil, a material that is resistant to discharge and difficult to conduct electricity is preferable. Furthermore, since heat is generated by applying a magnetic field to the heated object when induction heating is performed, a material with high magnetic permeability is preferable. Ceramics such as alumina and mullite can be used as such materials.

[0031] It is preferable that the radiation suppressing member 15 be able to deform appropriately in shape to follow the thermal expansion and deformation of the reaction vessel 7 and guide 10 as the heated objects. Furthermore, the shapes of the reaction vessel 7 and guide 10 as the heated objects may become complex due to the gas flow path structure for introducing the source gas 3 into the reaction vessel 7 and discharging the unreacted gas. Therefore, in this embodiment, the radiation suppressing member 15 is a fibrous member so as to exhibit appropriate flexibility. Specifically, for example, the radiation suppressing member 15 can be formed by wrapping threads made of the above-described materials or woven fabrics made of the threads around the reaction vessel 7 and guide 10. Alternatively, for example, the radiation suppressing member 15 can be formed by wrapping nonwoven fabrics made of the above-described materials around the reaction vessel 7 and guide 10. The sheet-like radiation suppressing member 15 made of woven fabric or nonwoven fabric may be a single layer or multiple layers.

[0032] Next, a method for producing SiC single crystal 20 using SiC single crystal production apparatus 1 according to this embodiment will be described.

[0033] First, the seed crystal 5 is attached to the pedestal 9, and then the first heating device 13 and the second heating device 14 are controlled to achieve a desired temperature distribution. Specifically, the first heating device 13 is controlled to induction heat the reaction vessel 7 to 2500°C, and the second heating device 14 is controlled to induction heat the guide 10 and maintain it at 2200°C. By achieving these temperatures, the source gas 3 to be introduced later can be thermally decomposed in the reaction vessel 7, and the source gas 3 can be recrystallized on the surface of the seed crystal 5.

[0034] Furthermore, while the vacuum chamber 6 is maintained at a desired pressure, a source gas 3 is introduced through the inlet 2 while, as necessary, introducing a carrier gas such as an inert gas, such as Ar or He, or an etching gas, such as H or HCl. For example, silane, propane, and hydrogen are introduced at a rate of 1 liter / minute, 0.33 liters / minute, and 15 liters / minute. As a result, the source gas 3 flows along the path indicated by the arrows in the figure, and the source gas 3 is thermally decomposed and supplied to the surface of the seed crystal 5 within the heated reaction chamber 7, whereby a SiC single crystal 20 is grown on the surface of the seed crystal 5.

[0035] At this time, purge gas 16 composed of an inert gas such as Ar or He or an etching gas such as H or HCl is introduced from rotary pull-up mechanism 12 through the gap between pipe member 12a and bellows 12c. As a result, purge gas 16 is introduced from around pedestal 9, as indicated by the arrows in the figure. Unreacted gas from source gas 3 that did not reach supersaturation and did not contribute to the growth of SiC single crystal 20 is diluted by purge gas 16 and flows through the gap between reaction vessel 7 and guide 10 to the space in vacuum vessel 6 outside first heating device 13 and second heating device 14. As a result, SiC components contained in the unreacted gas become smoky particles outside the parts of vacuum vessel 6 that constitute the crucible for growing SiC single crystal 20, such as reaction vessel 7 and guide 10, and are deposited and removed on the bottom of vacuum vessel 6.

[0036] Crystal growth of SiC single crystal 20 is carried out in this manner, during which the reaction vessel 7, heat insulating material 8, etc. are heated by induction heating of first heating device 13, causing heat radiation. Similarly, the SiC single crystal 20, guide 10, etc. are heated by induction heating of second heating device 14, causing heat radiation. These radiations may damage first coil protective tube 13b in first heating device 13 and second coil protective tube 14b in second heating device 14.

[0037] However, in this embodiment, first radiation suppressing member 15a is provided to cover first coil protecting tube 13b, and second radiation suppressing member 15b is provided to cover second coil protecting tube 14b. As a result, first radiation suppressing member 15a and second radiation suppressing member 15b block radiation, protecting first coil protecting tube 13b and second coil protecting tube 14b from radiated heat. Therefore, it is possible to prevent damage to first coil protecting tube 13b and second coil protecting tube 14b due to radiation.

[0038] As described above, in this embodiment, radiation suppression members 15 are disposed between the first heating device 13 and the reaction vessel 7 and the heat insulating material 8, and between the second heating device 14 and the SiC single crystal 20 and the guide 10, etc. Therefore, even if the reaction vessel 7, the SiC single crystal 20, the guide 10, etc. are heated by the first heating device 13 or the second heating device 14 during crystal growth of the SiC single crystal 20, causing radiation, it is possible to block the radiation from reaching the first coil protecting tube 13b and the second coil protecting tube 14b. This makes it possible to prevent damage to the first coil protecting tube 13b and the second coil protecting tube 14b due to radiation. Therefore, in the SiC single crystal manufacturing apparatus 1, damage to the first induction heating coil 13a and the second induction heating coil 14a can be prevented.

[0039] Furthermore, radiation suppressing member 15 according to this embodiment can effectively suppress radiation from a heated object having a complex shape. Furthermore, the shape of radiation suppressing member 15 can effectively follow the deformation of the furnace interior members. Therefore, this embodiment can provide SiC single crystal manufacturing apparatus 1 that can perform long-term heating using an induction heating coil more stably than conventional methods.

[0040] (Variation) The present disclosure is not limited to the above-described embodiments and specific examples. Therefore, the above-described embodiments and the like can be modified as appropriate. Representative modifications will be described below. In the following description of the modifications, differences from the above-described embodiments and the like will be mainly described. Furthermore, the same reference numerals are used for parts that are identical or equivalent to each other in the above-described embodiments and the following modifications. Therefore, in the following description of the modifications, the explanations in the above-described embodiments and the like can be used as appropriate for components that have the same reference numerals as the above-described embodiments and the like, unless there is a technical contradiction or special additional explanation.

[0041] The present disclosure is not limited to the specific applications and device configurations shown in the above embodiments. That is, for example, the present disclosure can be suitably applied not only to the production of SiC single crystal 20 but also to the production of other types of semiconductor crystals.

[0042] The configuration of the semiconductor crystal manufacturing apparatus is not limited to the specific example shown in the above embodiment. That is, for example, a configuration in which the configuration shown in FIG. 1 is turned upside down can be realized. Alternatively, the up-down direction in FIG. 1 may intersect with the direction of gravity. In other words, for example, a configuration in which the configuration shown in FIG. 1 is rotated 90 degrees clockwise in the figure can be realized. There are also no particular limitations on the configuration of the introduction path of the source gas 3 into the reaction vessel 7, the configuration of the discharge path of the unreacted gas, the axial position of the discharge port 4, the shape of the reaction vessel 7, etc.

[0043] Fig. 2 is a cross-sectional view of a modified SiC single crystal manufacturing apparatus 1. As shown in Fig. 2, in this modified example, a through-hole 7a is formed in the tip of the reaction vessel 7 on the guide 10 side, specifically in the flange-shaped portion, and a gap is provided between the reaction vessel 7 and the heat insulating material 8. Furthermore, a purge gas inlet 17 is provided in the bottom surface of the vacuum vessel 6. A plurality of through-holes 7a are arranged, for example, at equal intervals in the circumferential direction around the central axis of the reaction vessel 7.

[0044] In this configuration, when purge gas 16 is introduced from purge gas inlet 17, purge gas 16 is supplied between pedestal 9 and reaction vessel 7 through the gap between reaction vessel 7 and heat insulating material 8 and through through-hole 7a. This allows purge gas 16 to be introduced from the reaction vessel 7 side. Therefore, unreacted gas of source gas 3 that does not reach supersaturation and does not contribute to the growth of SiC single crystal 20 can be further diluted by purge gas 16, making it possible to further suppress clogging of the exhaust path.

[0045] In particular, when the gas flow path structure is complicated, such as in the configuration in which purge gas 16 is introduced from the reactor vessel 7 side as shown in FIG. 2, the shape of the reactor internal components, such as the reactor vessel 7, becomes more complicated than a simple cylindrical structure. Specifically, tapered diameter expansion / contraction portions, stepped portions, and the like may occur. In this regard, in the present disclosure, by providing flexibility to the radiation suppression member 15, it becomes possible for the shape of the radiation suppression member 15 to suit the deformation of the reactor internal components.

[0046] It goes without saying that the elements constituting the above-described embodiments are not necessarily essential unless expressly stated as essential or clearly considered essential in principle. Furthermore, when numerical values ​​such as the number, value, amount, and range of components are mentioned, the present disclosure is not limited to those specific numbers unless expressly stated as essential or clearly limited to a specific number in principle. Similarly, when the shape, direction, positional relationship, etc. of components are mentioned, the present disclosure is not limited to those shapes, directions, positional relationships, etc. unless expressly stated as essential or clearly limited to a specific shape, direction, positional relationship, etc. in principle.

[0047] The variations are not limited to the above examples. For example, all or part of one of the multiple embodiments may be combined with all or part of another embodiment, provided that there is no technical inconsistency. Similarly, all or part of one of the multiple variations may be combined with all or part of another embodiment, provided that there is no technical inconsistency.

[0048] (Disclosure perspective) As is clear from the above description of the embodiments and modifications, this specification discloses at least the following matters.

[0049] [First viewpoint] A semiconductor crystal manufacturing apparatus (1) includes: a seed crystal (5) made of a semiconductor placed on a pedestal (9) arranged in a vacuum vessel (6); and a semiconductor source gas (3) is supplied to the seed crystal to grow a crystal on a surface of the seed crystal, a heating device (13, 14) including an induction heating coil (13a, 14a) for heating a heating object (7, 10, 20) disposed in the vacuum vessel; a radiation suppression member (15) disposed between the object to be heated and the induction heating coil, for suppressing radiation from the object to be heated by induction heating of the induction heating coil to the induction heating coil; Equipped with The radiation suppressing member is a fibrous member arranged to surround the object to be heated. Semiconductor crystal manufacturing equipment. [Second viewpoint] The heating object includes a hollow cylindrical member (7). The semiconductor crystal manufacturing apparatus according to the first aspect. [Third Perspective] The radiation suppression member is made of a material that is discharge-resistant, has lower conductivity than a conductor, and has magnetic permeability that allows the magnetic field applied by the induction heating coil to pass through and heat the object to be heated. The semiconductor crystal manufacturing apparatus according to the first or second aspect. [Fourth viewpoint] The radiation suppression member is made of ceramics. The semiconductor crystal manufacturing apparatus according to any one of the first to third aspects. [Fifth viewpoint] The ceramic is alumina or mullite. A semiconductor crystal manufacturing apparatus according to a fourth aspect. [Sixth viewpoint] The heating device includes, in addition to the radiation suppression member (15), a coil protection member (13b, 14b) made of a transparent material that covers the induction heating coil, The radiation suppressing member is disposed between the coil protection member and the heated object. A semiconductor crystal manufacturing apparatus according to any one of the first to fifth aspects. [Explanation of symbols]

[0050] 1. SiC single crystal manufacturing equipment 5 seed crystals 6 Vacuum container 7. Reaction vessel 9 Pedestal 13a First induction heating coil 14a Second induction heating coil 15 Radiation suppression material 15a First radiation suppression member 15b Second radiation suppression member

Claims

1. A semiconductor crystal manufacturing apparatus (1) includes: a seed crystal (5) made of a semiconductor placed on a pedestal (9) placed in a vacuum vessel (6); and a semiconductor source gas (3) is supplied to the seed crystal to grow a crystal on a surface of the seed crystal, a heating device (13, 14) including an induction heating coil (13a, 14a) for heating a heating object (7, 10, 20) disposed in the vacuum vessel; a radiation suppression member (15) disposed between the object to be heated and the induction heating coil, for suppressing radiation from the object to be heated by induction heating of the induction heating coil to the induction heating coil; Equipped with The radiation suppressing member is a fibrous member arranged to surround the object to be heated. Semiconductor crystal manufacturing equipment.

2. The heated object includes a hollow cylindrical member (7). The semiconductor crystal manufacturing apparatus according to claim 1 .

3. The radiation suppression member is made of a material that is discharge-resistant, has lower conductivity than a conductor, and has magnetic permeability that allows the magnetic field applied by the induction heating coil to pass through and heat the object to be heated. The semiconductor crystal manufacturing apparatus according to claim 1 .

4. The radiation suppression member is made of ceramics. The semiconductor crystal manufacturing apparatus according to claim 1 .

5. The ceramic is alumina or mullite.

5. The semiconductor crystal manufacturing apparatus according to claim 4.

6. The heating device has, in addition to the radiation suppression member (15), a coil protection member (13b, 14b) made of a transparent material that covers the induction heating coil, The radiation suppressing member is disposed between the coil protection member and the heated object.

6. The semiconductor crystal manufacturing apparatus according to claim 1.

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