Substrate processing apparatus

Abstract

To provide a substrate processing apparatus capable of preventing constituent members from being overheated.SOLUTION: The substrate processing apparatus 1 of the embodiment includes the rotary holding unit 10 configured to hold and rotate the substrate W, the processing liquid supply unit 20 configured to supply the processing liquid Lp to the substrate W held and rotated by the rotary holding unit 10, and the heating unit 50 having the heating source 51 configured to heat the substrate W or the processing liquid Lp in contact with the substrate W in a non-contact manner. And a control device 90 including a temperature measurement part T for measuring the temperature of the heated object B heated by the heating part 50 in a non-contact manner, and a stop control part for stopping power supply to the heating part 50 when it is determined that the temperature measured by the temperature measurement part T exceeds a preset temperature.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] There is known a single-wafer substrate processing apparatus that supplies a processing liquid to a substrate such as a semiconductor wafer while rotating the substrate, thereby performing an etching process, a resist removal process, etc. In such a substrate processing apparatus, the substrate or the processing liquid on the substrate being processed is heated by a heating device, thereby increasing the temperature of the processing liquid and improving processing efficiency. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-211201 Summary of the Invention [Problem to be solved by the invention]

[0004] In such a heating device, it is necessary to heat the substrate and the processing liquid on the substrate without contact so that the cleanliness of the substrate does not deteriorate due to contact with the heat source. For example, non-contact heating can be achieved by using a light emitting element such as an LED that irradiates the substrate with heating light as the heat source of the heating device.

[0005] However, when a substrate or processing solution is heated by a non-contact heating source, the components constituting the substrate processing apparatus are also heated. For example, among the components that rotate the substrate, holding members such as chuck pins that hold the substrate are also heated. These heated components may become overheated due to factors such as a long heating time, high heating temperature, or malfunction of the heating source. This can lead to malfunctions due to deformation of the overheated components.

[0006] The embodiments of the present invention have been proposed to solve the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus that can prevent components from overheating. [Means for solving the problem]

[0007] A substrate processing apparatus according to an embodiment of the present invention includes a rotary holder that holds and rotates a substrate, a processing liquid supply unit that supplies a processing liquid to the substrate held and rotated by the rotary holder, a heating unit having a heat source that heats the substrate or the processing liquid in contact with the substrate in a non-contact manner, a temperature measurement unit that is positioned opposite the rotary holder and measures in a non-contact manner the temperature of an object to be heated by the heating unit, and a stop control unit that stops the supply of power to the heating unit when it is determined that the temperature measured by the temperature measurement unit exceeds a predetermined set temperature. [Effects of the Invention]

[0008] According to an embodiment of the present invention, it is possible to provide a substrate processing apparatus capable of preventing components from overheating. [Brief explanation of the drawings]

[0009] [Figure 1] 4 is a partial cross-sectional view in the axial direction illustrating the substrate processing apparatus according to the embodiment when a processing liquid is being supplied. FIG. [Figure 2] 2 is a partial cross-sectional view in the axial direction showing when a rinsing liquid is being supplied in the substrate processing apparatus of FIG. 1. FIG. [Figure 3] 2 is a partial cross-sectional view in the axial direction showing when a substrate is being loaded and unloaded in the substrate processing apparatus of FIG. 1. FIG. [Figure 4] FIG. 4 is a bottom view showing the heating unit and the component thermometer. [Figure 5] FIG. 2 is a block diagram of a control device. [Figure 6] 1 is a flowchart showing a procedure for substrate processing according to an embodiment. [Figure 7] 10 is a flowchart illustrating a procedure for a temperature monitoring process according to an embodiment. [Figure 8]FIG. 10 is a bottom view showing a modified example of the arrangement of the heating unit and the component thermometer. [Figure 9] FIG. 10 is a partial cross-sectional view of the substrate processing apparatus showing a modified example of the arrangement of the component thermometers. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. [overview] 1, the substrate processing apparatus 1 processes the substrate W by supplying a processing liquid Lp from a processing liquid supply unit 20 to the substrate W while rotating the substrate W held by a spin holder 10. The substrate processing apparatus 1 of this embodiment is a single-wafer processing apparatus that supplies a processing liquid Lp having etching ability to the substrate W to perform an etching process. During the etching process, the heating unit 50 heats the substrate W, thereby maintaining the processing liquid Lp supplied to the substrate W at a high temperature and improving processing efficiency.

[0011] Furthermore, a temperature measuring unit T disposed opposite the spin holder 10 measures the temperature of the object B to be heated by the heating unit 50 in a non-contact manner. The object B to be heated includes the substrate W and the processing liquid Lp. The object B to be heated also includes objects that are heated together with the substrate W and the processing liquid Lp. In this embodiment, the component M that constitutes the spin holder 10 is included in the object B to be heated. For example, the opposing surface 11a of the turntable 11 that constitutes the spin holder 10 and the holding member 12 that holds the substrate W are the component M and the object B to be heated. Furthermore, the control device 90 of the substrate processing apparatus 1 monitors the temperature measured by the temperature measuring unit T to prevent the component M from overheating.

[0012] The substrate W processed in this embodiment is, for example, a disk-shaped silicon wafer (hereinafter referred to as a Si substrate) having a silicon nitride film and a silicon oxide film formed on its surface. The processing liquid Lp is, for example, an aqueous solution containing phosphoric acid (hereinafter referred to as a phosphoric acid solution). The concentration of phosphoric acid in the processing liquid Lp is, for example, 85 to 94 wt %. The rinse liquid Lc is, for example, pure water (HO).

[0013] [composition] As shown in FIG. 1, the substrate processing apparatus 1 of this embodiment includes a spin holder 10, a processing liquid supply unit 20, a rinse liquid supply unit 30, a liquid receiving unit 40, a heating unit 50, a lifting mechanism 60, a component thermometer 70 (temperature measurement unit T), a processing liquid thermometer 80, and a control device 90.

[0014] (Rotational holding part) The rotating holder 10 holds and rotates the substrate W. The rotating holder 10 has a rotating table 11, a holding member 12, and a drive unit 13. The rotating table 11 is a cylindrical member, one end of which is closed by a facing surface 11a. The facing surface 11a is a circular surface with a larger diameter than the substrate W, and faces the substrate W to be processed with a gap therebetween.

[0015] The holding members 12 are members that hold the substrate W at intervals on the opposing surface 11a of the turntable 11. In this embodiment, the holding members 12 are chuck pins that protrude above the turntable 11 and are provided at equal intervals along positions corresponding to the outer periphery of the substrate W. The holding members 12 are movable by an opening / closing mechanism (not shown) between a closed position where they contact the outer periphery of the substrate W to hold the substrate W, and an open position where they move away from the outer periphery of the substrate W to release the substrate W. The holding members 12 may have any shape as long as they are capable of holding the substrate W. For example, they may be hook-shaped members that rotate in a direction toward and away from the substrate W.

[0016] The drive unit 13 is a drive source (motor) that rotates the turntable 11. The drive unit 13 rotates the turntable 11, thereby rotating the substrate W held by the holding member 12.

[0017] (Processing liquid supply unit) The processing liquid supply unit 20 supplies a processing liquid Lp to the substrate W held and rotated by the spin holder 10. The processing liquid supply unit 20 has a processing liquid nozzle 21, a processing liquid supply pipe 22, a heater 23, and a valve 24. The processing liquid nozzle 21 is inserted through a support part 52 and a cover 53 of the heating unit 50, which will be described later, and is provided so that a discharge outlet 21a at the tip thereof faces near the center of the substrate W held by the spin holder 10.

[0018] The processing liquid nozzle 21 is connected to a processing liquid supply source 25, such as a tank, in which the processing liquid Lp is stored, via a processing liquid supply pipe 22. In this embodiment, the processing liquid Lp delivered from the processing liquid supply source 25 is heated in advance. A heater 23 is provided in the processing liquid supply pipe 22. The processing liquid Lp delivered from the processing liquid supply source 25 passes through the processing liquid supply pipe 22, is heated by the heater 23, and is then delivered from the discharge port 21 a of the processing liquid nozzle 21 toward the center of the substrate W.

[0019] The temperature of the processing liquid Lp discharged from the processing liquid nozzle 21 is, for example, 160° C. Furthermore, a valve 24 is provided midway along the processing liquid supply pipe 22. By opening and closing the valve 24, the discharge of the processing liquid Lp from the processing liquid nozzle 21 is started and stopped. The valve 24 is electrically connected to a control device 90, which will be described later, and the opening and closing of the valve 24 is controlled by the control device 90.

[0020] (Rinse liquid supply unit) 2, the rinse liquid supply unit 30 supplies a rinse liquid Lc to the substrate W held by the spin holder 10. Pure water, for example, can be used as the rinse liquid Lc. The rinse liquid supply unit 30 has a rinse liquid nozzle 31, a rinse liquid supply pipe 32, and a valve 33. The rinse liquid nozzle 31 is inserted through a support unit 52 and a cover 53 of the heating unit 50, which will be described later, and is provided so that an outlet 31a at the tip faces near the center of the substrate W held by the spin holder 10.

[0021] The rinse liquid nozzle 31 is connected to a rinse liquid supply source 34, such as a tank that stores the rinse liquid Lc, via a rinse liquid supply pipe 32. The rinse liquid Lc delivered from the rinse liquid supply source 34 passes through the rinse liquid supply pipe 32 and is discharged from the discharge port 31a of the rinse liquid nozzle 31 toward the center of the substrate W. A valve 33 is provided midway along the rinse liquid supply pipe 32. Discharge of the rinse liquid Lc from the rinse liquid nozzle 31 is started and stopped by opening and closing the valve 33. The valve 33 is electrically connected to a control device 90, which will be described later, and its opening and closing is controlled by the control device 90.

[0022] (liquid receiving part) The liquid receiving unit 40 is provided to surround the spin holder 10, and receives the processing liquid Lp and the rinsing liquid Lc scattered from the rotating substrate W. The liquid receiving unit 40 discharges the received processing liquid Lp and rinsing liquid Lc to the outside of the substrate processing apparatus 1.

[0023] The liquid receiving unit 40 has a cup portion 41 and a receiving portion 42. The cup portion 41 is a cylindrical body that covers the periphery of the rotation holding unit 10 with a gap therebetween and is bent so that the diameter narrows at the top. The cup portion 41 is provided so as to be movable between a standby position (see FIG. 3) and a processing position (see FIGS. 1 and 2) by an elevating mechanism (not shown). The receiving portion 42 is provided below the cup portion 41 and is a circular container that is open at the top.

[0024] The processing liquid Lp and rinsing liquid Lc scattered from the substrate W are received by the cup portion 41 and fall downward along the inner wall of the cup portion 41, and then flow into the receiving portion 42. The processing liquid Lp and rinsing liquid Lc that have flowed into the receiving portion 42 are discharged to the outside of the substrate processing apparatus 1 from a discharge port (not shown) formed in the bottom surface of the receiving portion 42.

[0025] (heating part) The heating unit 50 has a heat source 51 that heats the substrate W without contact. The heat source 51 is capable of heating the substrate W when it receives a power supply (power feeding). The heat source 51 is, for example, a light-emitting element that emits light for heating. The substrate W is heated when the heat source 51 irradiates the substrate W, which is held and rotated by the spin holder 10, with light. The processing liquid Lp supplied near the center of the substrate W spreads toward the outer edge of the substrate W due to centrifugal force. Without further heating, the supplied high-temperature (160°C) processing liquid Lp would lose temperature as it flows over the substrate W due to heat conduction and heat radiation to the substrate W. Therefore, by heating the substrate W, the processing liquid Lp on the substrate W can be heated by heat conduction from the substrate W, and the processing liquid Lp on the substrate W can be maintained at a high temperature. Note that the output of the heating unit 50 may be controlled not only to maintain the temperature of the processing liquid Lp but also to further increase the temperature on the substrate W.

[0026] The light-emitting element used as the heat source 51 emits light (electromagnetic waves) of a wavelength that is absorbed by the substrate W to heat the substrate W. The light emitted by the heat source 51 is light of a wavelength that is transmitted through the processing liquid Lp. Here, "absorbed by the substrate W" means that the light incident on the substrate W is absorbed to an extent that the substrate W can be sufficiently heated, and includes not only complete absorption by the substrate W but also a portion of the light being reflected by or transmitted through the substrate W. "Transmitted through the processing liquid Lp" means that the light incident on the processing liquid Lp is transmitted through the processing liquid Lp to an extent that the substrate W can be sufficiently heated, and includes a portion of the light being absorbed by or reflected by the processing liquid Lp.

[0027] As the light emitting element, for example, an LED that emits light for heating is used. The wavelength of the light emitted by this LED is, for example, 350 to 1060 nm (not less than 350 nm and not more than 1060 nm). More preferably, the center wavelength is 395 to 940 nm (not less than 395 nm and not more than 940 nm). In this embodiment, an LED whose center wavelength of emitted light is 395 nm is used.

[0028] As a result, even if light from the heat source 51 is irradiated from above the space in which the substrate W is held, i.e., from above the processing liquid Lp supplied to the substrate W, the light can pass through the processing liquid Lp on the substrate W and be absorbed by the substrate W, thereby heating the substrate W. Then, the temperature of the processing liquid Lp increases due to heat conduction from the substrate W, thereby increasing the etching rate (processing rate). The start and stop of heating by the heat source 51 and the output of the heat source 51 are controlled by a control device 90, which will be described later. The start and stop of power supply to the heat source 51 in accordance with the temperature measured by the temperature measurement unit T are also controlled by the control device 90, which will be described later.

[0029] The heating unit 50 has a support unit 52 and a cover 53 in addition to the above-described heat source 51. The support unit 52 is a member that supports the multiple heat sources 51. The support unit 52 is a cylindrical member whose upper end is closed by a top plate 521. The diameter of the support unit 52 is the same as or larger than the diameter of the substrate W. The support unit 52 is disposed above the turntable 11, facing the opposing surface 11a with a gap therebetween. This allows the heating unit 50 to irradiate light from the heat source 51 from above the space in which the substrate W is held by the rotation holder 10. Furthermore, two through holes 521a and 521b are provided near the center of the top plate 521 of the support unit 52.

[0030] As shown in Fig. 4, the cover 53 is a disk-shaped member that covers the end of the support part 52 that faces the turntable 11. The cover 53 is made of a material that is resistant to the processing liquid Lp and that transmits the light emitted from the heat source 51. For example, a quartz cover 53 is used. Two through holes 53a and 53b are formed near the center C of the cover 53. In Fig. 4, the heat source 51 that can be seen through the cover 53 is indicated by a solid line.

[0031] 1, the processing liquid nozzle 21 is inserted through the through-holes 521a and 53a so that the outlet 21a at the tip is exposed from the cover 53 and directed toward the substrate W. The rinsing liquid nozzle 31 is inserted through the through-holes 521b and 53b so that the outlet 31a at the tip is exposed from the cover 53 and directed toward the substrate W.

[0032] A plurality of heating sources 51 are attached to the support part 52 so as to face the turntable 11 with a cover 53 in between. The heating part 50 has a plurality of regions in which the heating sources 51 are arranged. That is, the plurality of heating sources 51 are arranged in a plurality of regions. In this embodiment, the heating sources 51 are provided in regions corresponding to different radial positions of the substrate W, and the output of the heating sources 51 can be controlled for each region. Furthermore, the plurality of heating sources 51 are arranged so that light can be irradiated onto the entire surface to be processed of the substrate W.

[0033] For example, as shown in Fig. 4, a plurality of heat sources 51A to 51D are arranged in four concentric annular regions R1 to R4 (indicated by two-dot chain lines in the figure), and the output can be controlled for each of the regions R1 to R4. Each of the regions R1 to R4 excludes a sector-shaped region in which a processing liquid thermometer 80 (described later) is arranged, and no heat source 51 is arranged in this sector-shaped region. In the following description, when the regions R1 to R4 are not distinguished, they are simply referred to as region R. Furthermore, when the heat sources 51A to 51D are not distinguished, they are simply referred to as heat source 51.

[0034] In FIG. 4, the intervals between the heat sources 51 corresponding to the boundaries of each region R are large to make the regions R easier to identify, but the intervals between the heat sources 51 may all be equal as long as the region R to be controlled is distinguishable. The number of heat sources 51 is also not limited to that shown in FIG. 4. For example, hundreds to thousands of heat sources 51 may be densely arranged overall. By rotating the substrate W relative to the multiple heat sources 51, the entire substrate W can be irradiated with light and the entire surface of the substrate W can be heated.

[0035] (Lifting mechanism) 1, the lifting mechanism 60 supports and raises and lowers the heating unit 50. The lifting mechanism 60 has an arm 61 and a support pillar 62. The arm 61 is a member extending in a direction parallel to the substrate W, and one end of the arm 61 is connected to the outer periphery of the support unit 52. The support pillar 62 stands in a direction perpendicular to the substrate W, and supports the other end of the arm 61. The support pillar 62 is provided so as to be movable up and down by a drive source such as a ball screw mechanism or cylinder (not shown).

[0036] The heating section 50 is positioned at any one of the heights of a loading / unloading position P1, a heating position P2, and a rinsing position P3 by driving the lifting mechanism 60. The respective positions are as follows. Carry-in / out position P1: A height position spaced above the turntable 11 so that the hand H of the transport robot can be inserted (see FIG. 3). Heating position P2: a height position closer to the substrate W than the loading / unloading position P1 (see FIG. 1), but not in contact with the processing liquid Lp on the substrate W. Rinse position P3: A height position between the transfer position P1 and the heating position P2 (see FIG. 2).

[0037] (Component thermometer) As shown in FIG. 1 , this embodiment has a component thermometer 70 as the temperature measurement unit T. The component thermometer 70 measures the temperature of the component M, which is the heated object B. As described above, the component M includes the opposing surface 11a and the holding member 12. For example, a radiation thermometer is used as the component thermometer 70. A radiation thermometer is a thermometer that focuses light (electromagnetic waves) emitted from an object onto a detection element and outputs an electrical signal according to the temperature. The radiation thermometer of this embodiment measures the temperature of the component M in a non-contact manner based on the light emitted from the component M. More specifically, the light emitted from the component M is received by the light receiving unit 70a, and the temperature of the component M is calculated according to the intensity of the light.

[0038] The component thermometer 70 is provided at a position facing the holding member 12 of the stopped rotation holder 10. In other words, the component thermometer 70 is positioned so that the stopped holding member 12 is included in its temperature measurement range. This allows the component thermometer 70 to detect the temperature of the holding member 12 while the rotation holder 10 is stopped.

[0039] Furthermore, the component thermometer 70 positioned in this manner faces a circumferential position on the opposing surface 11a, which is the movement path of the holding member 12, while the rotating holder 10 is rotating. Therefore, while the rotating holder 10 is rotating, the component thermometer 70 can detect the temperatures of the holding member 12 and the opposing surface 11a. In this embodiment, there is only one component thermometer 70. As described above, the rotating holder 10 is heated while rotating, so there is a high possibility that multiple holding members 12 located in a common circumferential portion are heated equally. For this reason, it is sufficient to measure the temperature of one representative holding member 12. However, as will be described later, multiple component thermometers 70 may be arranged.

[0040] The component thermometer 70 is provided at a position where it can measure the temperature near the outermost periphery of the region heated by the heat source 51. More specifically, as shown in FIG. 4, it is provided on a circumference outside the outermost region of the region where the heat source 51 is provided. This position is near the outside of a processing liquid thermometer 80A, which is provided at the outermost periphery of multiple processing liquid thermometers 80 described below. Since the temperature of the processing liquid Lp supplied to and spread over the substrate W is likely to decrease at such a position, there is a high possibility that the heating temperature of the heat source 51 will be increased. As a result, there is a high possibility that the temperature of the object B heated by the heat source 51 will be the highest at this position. Therefore, the object B, for example, the holding member 12, located in the region that is likely to be the highest in temperature is the object to be measured by the component thermometer 70.

[0041] In this embodiment, the component thermometer 70 is fixed to the support part 52. More specifically, as shown in Fig. 1 and Fig. 4, through holes 521c, 53c are formed in positions facing the holding member 12 near the outer edges of the cover 53 and the support part 52. The through hole 521c of the support part 52 and the through hole 53c of the cover 53 are provided directly above the stopping position of the holding member 12.

[0042] The member thermometer 70 is inserted into the through-hole 521c and fixed so that the light-receiving part 70a faces the stopped holding member 12 via the through-hole 53c. The member thermometer 70 is electrically connected to the control device 90. The member thermometer 70 transmits the measured value to the control device 90 while the substrate processing apparatus 1 is operating.

[0043] The measurement wavelength of the component thermometer 70 is a wavelength that can measure the light intensity emitted from the holding member 12 and opposing surface 11a, which are the component M. Furthermore, the measurement wavelength of the component thermometer 70 is preferably a wavelength different from the wavelength of the light emitted by the heat source 51. By setting the measurement wavelength of the component thermometer 70 to a wavelength different from the wavelength of the light emitted by the heat source 51, it is possible to prevent stray light from being generated in the processing liquid thermometer 80, and to reduce measurement errors.

[0044] For example, the measurement wavelength of the component thermometer 70 is preferably 8 to 14 μm (8 μm or more, 14 μm or less). This measurement wavelength is different from the wavelength of the light emitted by the heat source 51 and is a wavelength that allows for temperature measurement of both the holding member 12 and the turntable 11. The emissivity of the component thermometer 70 is preferably set to the emissivity of the object B that is most easily heated by the heating unit 50 among the objects to be heated that are within the measurement range. For example, if the material of the holding member 12, which is the component M, is carbon fiber-reinforced PTFE (polytetrafluoroethylene), the emissivity of that material is set.

[0045] (Processing liquid thermometer) The processing liquid thermometer 80 measures the temperature of the processing liquid Lp heated in contact with the substrate W. The processing liquid thermometer 80 is, for example, a radiation thermometer. The processing liquid thermometer 80 of this embodiment measures the temperature of the processing liquid Lp in a non-contact manner based on light emitted from the processing liquid Lp. More specifically, the light emitted from the processing liquid Lp is received by the light receiving unit 80a, and the temperature of the processing liquid Lp is calculated according to the intensity of the light.

[0046] The processing liquid thermometers 80 are provided at positions corresponding to the plurality of regions R. That is, the number of radiation thermometers provided corresponds to the number of regions R. In this embodiment, four processing liquid thermometers 80A to 80D are fixed to the support part 52 corresponding to the regions R1 to R4. When the processing liquid thermometers 80A to 80D are not to be distinguished from one another, they are simply referred to as processing liquid thermometers 80.

[0047] 1 and 4, through-holes 521d, 53d are formed on the circumference of sectorial regions of cover 53 and support part 52 where heat source 51 is not arranged, corresponding to regions R1 to R4 where heat source 51 is arranged. Four through-holes 521d of support part 52 and four through-holes 53d of cover 53 are provided, each corresponding to the four regions R1 to R4.

[0048] Each of the processing liquid thermometers 80A to 80D is inserted into a corresponding through-hole 521d, and is fixed so that the light-receiving part 80a faces the substrate W held by the rotary holder 10 via each through-hole 53d. The processing liquid thermometer 80 is electrically connected to the control device 90. In this embodiment, the four processing liquid thermometers 80 and the component thermometer 70 are arranged in a straight line along the radial direction of the support part 52 (substrate W). The component thermometer 70 is arranged near the outermost processing liquid thermometer 80A.

[0049] The measurement wavelength of the processing liquid thermometer 80 is a wavelength that can measure the light intensity emitted from the processing liquid Lp. It is also preferable that the measurement wavelength of the processing liquid thermometer 80 and the wavelength of the light emitted by the heat source 51 are different. By making the measurement wavelength of the processing liquid thermometer 80 and the wavelength of the light emitted by the heat source 51 different, it is possible to prevent stray light from being generated in the processing liquid thermometer 80 and reduce measurement errors.

[0050] For example, when the processing liquid Lp is a phosphoric acid solution, the measurement wavelength of the processing liquid thermometer 80 is preferably 2.2 to 2.4 μm (2.2 μm or more and 2.4 μm or less). In this embodiment, the measurement wavelength is 2.3 μm. 2.2 to 2.4 μm is a wavelength at which the intensity ratio between the phosphoric acid solution and water is large. By using such a wavelength as the measurement wavelength for the processing liquid thermometer 80, even if water vapor is generated during processing, the influence of the water vapor can be suppressed and the temperature of the processing liquid Lp can be measured.

[0051] Furthermore, the measurement wavelength of the processing liquid thermometer 80 is different from the measurement wavelength of the component thermometer 70. For example, as described above, if the measurement wavelength of the processing liquid thermometer 80 is 2.2 to 2.4 μm, this is different from the measurement wavelength of the component thermometer 70, which is 8 to 14 μm.

[0052] (Control device) The control device 90 controls each part of the substrate processing apparatus 1. The control device 90 has a processor that executes programs to realize various functions of the substrate processing apparatus 1, a memory that stores various information such as the programs and operating conditions, and a drive circuit that drives each element. In other words, the control device 90 controls the spin holder 10, the processing liquid supply unit 20, the rinse liquid supply unit 30, the liquid receiving unit 40, the heating unit 50, the lifting mechanism 60, the member thermometer 70 (temperature measurement unit T), the processing liquid thermometer 80, etc.

[0053] 5, the control device 90 has a mechanism control unit 91, a temperature control unit 92, a stop control unit 93, a notification unit 94, and a memory unit 95. The mechanism control unit 91 controls the operation of mechanism parts such as the opening / closing mechanism of the spin holder 10, the drive unit 13, the heater 23 of the processing liquid supply unit 20, the valve 24, the valve 33 of the rinse liquid supply unit 30, the lifting mechanism of the liquid receiving unit 40, and the lifting mechanism 60.

[0054] The temperature control unit 92 controls the heating temperature of the substrate W by the heating unit 50 based on the temperature of the processing liquid Lp measured by the processing liquid thermometer 80. The processing liquid thermometer 80 corrects the measured light intensity based on the emissivity of the processing liquid Lp stored in advance in the memory unit 95, and calculates the temperature of the processing liquid Lp on the substrate W. The calculated temperature is then transmitted to the control device 90. The temperature control unit 92 adjusts the light intensity of the heat source 51 of the heating unit 50 to heat the substrate W so that the temperature of the processing liquid Lp becomes a target temperature. At this time, the temperature of the processing liquid Lp in each of the regions R1 to R4 is controlled by adjusting the light intensity of each of the heat sources 51A to 51D in accordance with the temperature of the processing liquid Lp measured by the processing liquid thermometers 80A to 80D in each of the regions R1 to R4. In other words, the control device 90 controls the output of the heat source 51 for each of the multiple regions R based on the temperature of the substrate W measured by the processing liquid thermometer 80.

[0055] The stop control unit 93 stops the power supply (power feeding) to the heating unit 50 when it determines that the temperature measured by the component thermometer 70, which is the temperature measurement unit T, exceeds a preset temperature. The set temperature is determined based on the heat resistance temperature of the material of the component M so as to be lower than the temperature at which abnormalities such as deformation occur. For example, it is determined based on the heat resistance temperature of the material of the holding member 12 or the material of the turntable 11. The set temperature may also be set to match the lower heat resistance temperature. The stop control unit 93 also instructs the mechanism control unit 91 to stop the processing operation of the substrate processing apparatus 1 until a predetermined operation is performed by the operator. For example, the stop control unit 93 stops the rotation of the spin holder 10, the supply of the processing liquid Lp, the supply of the rinse liquid Lc, the loading of the substrate W, etc.

[0056] When the notification unit 94 determines that the temperature measured by the component thermometer 70, which is the temperature measurement unit T, exceeds the set temperature, it causes the output unit 97, which will be described later, to output an alarm notifying that there is a temperature abnormality. The memory unit 95 stores information necessary for processing in each unit of the substrate processing apparatus 1. For example, the memory unit 95 stores the target temperature of the processing liquid Lp, the emissivity of the processing liquid Lp, the emissivity of the holding member 12, the set temperature, alarm information, etc.

[0057] An input unit 96 and an output unit 97 are connected to the control device 90. The input unit 96 is configured by, for example, a touch panel, a keyboard, a mouse, a switch, etc. Through the input unit 96, the operator can input information required for processing the substrate W, such as instructions to turn on (start) or off (stop) the power supply of the substrate processing apparatus 1, instructions to start or stop substrate processing, instructions to start or stop heating by the heating unit 50, instructions to start or stop supplying power to the heating unit 50, the target temperature of the processing liquid Lp, the emissivity of the processing liquid Lp, the emissivity of the holding member 12, and the set temperature.

[0058] The output unit 97 is composed of, for example, a display, a speaker, a buzzer, a lamp, etc. In accordance with instructions from the notification unit 94, the output unit 97 outputs an alarm to notify the worker. For example, the output unit 97 may display an image informing the worker of an abnormality on the display, sound an alarm using a speaker or buzzer, or turn a lamp on, off, or flash.

[0059] [Operation] The operation of the substrate processing apparatus 1 of this embodiment as described above will be described with reference to the flowcharts of Figures 6 and 7, in addition to Figures 1 to 5. Note that a substrate processing method for processing a substrate W and a temperature monitoring method for the substrate processing apparatus 1 according to the following procedure are also aspects of this embodiment.

[0060] (Substrate processing) First, the overall procedure for substrate processing will be described with reference to Fig. 6. As shown in Fig. 3, the heating unit 50 is previously positioned at the transfer position P1, and the cup unit 41 is positioned at the standby position. The valve 24 of the processing liquid supply unit 20 and the valve 33 of the rinse liquid supply unit 30 are closed. The rotation holder 10 is stopped, and the holding member 12 faces the member thermometer 70.

[0061] When the power supply of the substrate processing apparatus 1 is turned ON (started) (step S101), the control device 90 starts temperature monitoring (step S102). That is, the member thermometer 70 transmits the detected temperature of the component member M to the control device 90, and the control device 90 continues or stops the supply of power to the heating unit 50 depending on the temperature. This temperature monitoring process is continued until the power supply of the substrate processing apparatus 1 is turned OFF (stopped), and details will be described later.

[0062] When a substrate processing start command is input (YES in step S103), the holding members 12 are set to the open position, and the substrate W mounted on the hand H (see FIG. 3) of the transport robot is carried in between the heating unit 50 and the turntable 11. Then, the holding members 12 are set to the closed position, and the peripheral edge of the substrate W is supported by the holding members 12. As a result, the substrate W is held on the opposing surface 11a of the turntable 11 with a gap therebetween (step S104). At this time, the substrate W is positioned so that its center coincides with the rotation axis of the turntable 11. Then, the cup part 41 is raised and positioned at the processing position (step S105).

[0063] Next, as shown in FIG. 2, the turntable 11 rotates, causing the substrate W held by the holding member 12 to start rotating, and the heating part 50 is lowered to be positioned at the rinsing position P3 (step S106).

[0064] Then, the valve 33 of the rinse liquid supply unit 30 is opened, and the rinse liquid Lc is discharged from the rinse liquid nozzle 31 toward the center of the substrate W (step S107). When the rinse liquid Lc is supplied to the rotating substrate W, the rinse liquid Lc moves gradually toward the outer periphery of the substrate W and spreads over the entire surface of the substrate W to be processed.

[0065] Without such supply of rinse liquid Lc, when the processing liquid Lp is supplied, the processing liquid Lp does not spread over the entire processing surface of the substrate W due to surface tension, resulting in uneven processing. In this embodiment, to prevent such uneven processing, the rinse liquid Lc is supplied in this step before the processing liquid Lp is supplied. When a predetermined rinse time (a preset set time) has elapsed (YES in step S108), the valve 33 of the rinse liquid supply unit 30 closes, and the discharge of the rinse liquid Lc from the rinse liquid nozzle 31 stops (step S109).

[0066] 1, the heating unit 50 starts to descend and stops when it reaches the heating position P2 (step S110). Then, the valve 24 of the processing liquid supply unit 20 opens, and the processing liquid Lp is discharged from the processing liquid nozzle 21 toward the center of the substrate W (step S111). When the processing liquid Lp is supplied to the rotating substrate W, the processing liquid Lp moves sequentially toward the outer periphery of the substrate W and spreads over the entire processing surface of the substrate W. Because the processing surface of the substrate W has been supplied with the rinse liquid Lc in advance, the processing liquid Lp spreads over the entire processing surface of the substrate W, preventing uneven processing.

[0067] As soon as the discharge of the processing liquid Lp begins, heating of the substrate W by irradiation with light from the heat source 51 and measurement of the temperature of the processing liquid Lp by the processing liquid thermometer 80 begin. During heating of the substrate W, the temperature control unit 92 of the control device 90 feedback-controls the output of the heat source 51 based on the temperature measurement results of the processing liquid Lp, thereby maintaining the temperature of the processing liquid Lp on the substrate W at a target temperature (step S112). Even if water vapor (HO) is generated by heating, the influence of the water vapor is suppressed because the measurement wavelength of the processing liquid thermometer 80 has low absorbance of water, and the temperature of the processing liquid Lp can be measured. This process of heating the substrate W while supplying the processing liquid Lp to the substrate W continues until a predetermined processing time (a preset set time) has elapsed (NO in step S113).

[0068] When the predetermined processing time has elapsed (YES in step S113), the valve 24 of the processing liquid supply unit 20 closes to stop the supply of the processing liquid Lp from the processing liquid nozzle 21 (step S114). At the same time, heating by the heat source 51, i.e., light irradiation, and temperature measurement by the processing liquid thermometer 80 are stopped.

[0069] 2, the heating unit 50 starts to rise and stops when it reaches the rinse position P3 (step S115). Then, the valve 33 of the rinse liquid supply unit 30 opens, and the rinse liquid Lc is discharged from the rinse liquid nozzle 31 toward the center of the substrate W (step S116). When the rinse liquid Lc is supplied to the rotating substrate W, the rinse liquid Lc moves gradually toward the outer periphery of the substrate W and spreads over the entire surface of the substrate W to be processed.

[0070] When the rinsing liquid Lc is supplied to the processing liquid Lp, which is a phosphoric acid solution, a large amount of water vapor is generated. At this time, the heating unit 50 is at the rinsing position P3, which is a position farther away from the substrate W than the heating position P2, so that adhesion of water vapor to the heating unit 50 can be suppressed. Furthermore, because the rinsing position P3 is closer to the substrate W than the loading / unloading position P1, liquid splashing can be suppressed, and adhesion of liquid droplets to the heating unit 50 can be suppressed.

[0071] When a predetermined rinsing time (a preset set time) has elapsed (YES in step S117), the valve 33 of the rinsing liquid supply unit 30 closes, and the discharge of the rinsing liquid Lc from the rinsing liquid nozzle 31 stops (step S118). As the turntable 11 stops, the substrate W held by the holding member 12 stops rotating (step S119). Thereafter, the cup unit 41 descends and is positioned at the standby position (step S120).

[0072] 3, the heating unit 50 is raised and positioned at the transfer position P1 (step S121). In this state, the hand H of the transport robot is inserted below the substrate W, and the holding member 12 is set to the open position, so that the substrate W is placed on the hand H of the transport robot and transported to the outside (step S122). At this time, the rinsing liquid Lc is held on the substrate W.

[0073] If there is a next substrate W to be processed and an instruction to stop substrate processing has not been input, the substrate processing apparatus 1 continues substrate processing (YES in step S123). That is, the processing in steps S104 to S122 is repeated. If there is no next substrate W to be processed or an instruction to stop substrate processing has been input, the substrate processing apparatus 1 does not continue substrate processing (NO in step S123). Then, if the power supply to the substrate processing apparatus 1 is turned off (YES in step S124), the substrate processing ends. The substrate processing also ends if the substrate processing has not started (NO in step S103) or if the power supply to the substrate processing apparatus 1 is turned off (YES in step S124).

[0074] (Temperature monitoring process) Next, the procedure for monitoring the temperature of the component M, which is the object to be heated B, in the substrate processing described above will be described with reference to the flowchart in FIG. 7. As described above, when the power supply to the substrate processing apparatus 1 is turned ON (step S201), the control device 90 continuously receives the temperature of the component M measured by the component thermometer 70. When the power supply to the substrate processing apparatus 1 is turned ON, power supply to the heating unit 50 is started. If the received temperature is equal to or lower than the set temperature (NO in step S202), power supply to the heating unit 50 continues. In this way, temperature monitoring continues while the power supply to the substrate processing apparatus 1 is ON (NO in step S207).

[0075] When the stop control unit 93 determines that the received temperature exceeds the set temperature (YES in step S202), it stops the power supply to the heating unit 50 (step S203). As a result, when the substrate processing apparatus 1 is performing substrate processing by supplying the processing liquid Lp, the heating of the processing liquid Lp by the heating unit 50 is stopped, thereby preventing overheating. Also, even if heating by the heating unit 50 does not stop due to a malfunction or heating by the heating unit 50 has already started due to a malfunction, if the set temperature is exceeded, the power supply to the heating unit 50 is stopped and heating by the heating unit 50 is stopped, thereby preventing overheating.

[0076] Then, in response to an instruction from the notification unit 94, the output unit 97 outputs an alarm notifying that a temperature abnormality has occurred (step S204). Furthermore, if the mechanical parts of the substrate processing apparatus 1 are operating (YES in step S205), the stop control unit 93 instructs the mechanism control unit 91 to stop the operation of the mechanical parts (step S206). For example, the rotation of the spin holder 10, the supply of the processing liquid Lp by the processing liquid supply unit 20, and the loading of the next substrate W are stopped. In response to such an alarm and operation stop, the operator inspects the substrate processing apparatus 1. Thereafter, substrate processing is stopped until the operator inputs an instruction to start power supply to the heating unit 50 and an instruction to start substrate processing.

[0077] Even when heating is not being performed by the heating unit 50, if the stop control unit 93 determines that the received temperature exceeds the set temperature (YES in step S202), it determines that some abnormality has occurred, stops the power supply to the heating unit 50 (step S203), causes the output unit 97 to output an alarm (step S204), and stops the operation of the mechanical parts of the substrate processing apparatus 1 (step S206). As a result, even if a heating command is issued from the control device 90 due to a malfunction, an erroneous operation, etc., the heating unit 50 that is not receiving power supply will not start heating.

[0078] [effect] (1) The substrate processing apparatus 1 of this embodiment includes a spin holder 10 that holds and rotates the substrate W, a processing liquid supply unit 20 that supplies processing liquid Lp to the substrate W held and rotated by the spin holder 10, a heating unit 50 having a heat source 51 that heats the substrate W or the processing liquid Lp in contact with the substrate W in a non-contact manner, a temperature measurement unit T that is positioned opposite the spin holder 10 and measures in a non-contact manner the temperature of the object B heated by the heating unit 50, and a stop control unit 93 that stops the supply of power to the heating unit 50 when it is determined that the temperature measured by the temperature measurement unit T exceeds a predetermined set temperature.

[0079] Therefore, the substrate W and the processing liquid Lp are heated by the heat source 51 that heats without contact, and the heated object B can be prevented from overheating even if the heating time becomes long, the heating temperature becomes high, or the heat source 51 malfunctions. Therefore, it is possible to prevent the object B from being damaged due to deformation caused by overheating.

[0080] Furthermore, if a thermocouple or the like is provided inside the turntable 11 to measure the temperature of the object to be heated B, the wiring for the thermocouple becomes complicated and maintenance becomes troublesome. However, in this embodiment, the temperature measurement unit T, which is located opposite the rotation holder 10, measures the temperature of the object to be heated B in a non-contact manner, which simplifies the device configuration and makes maintenance easier.

[0081] (2) The object to be heated B includes a component M that constitutes the rotating holding unit 10, and the temperature measuring unit T has a component thermometer 70 that measures the temperature of the component M. Therefore, deformation of the component M, such as the holding member 12 or the opposing surface 11a of the rotating table 11, due to overheating can be prevented.

[0082] (3) The component thermometer 70 is a radiation thermometer that measures the temperature of the component M based on the light emitted from the component M of the rotating holder 10. This allows the temperature of the component M, which moves due to rotation, to be measured without contact. Furthermore, because the surface of the object B is heated by the heat source 51 without contact, the temperature of the surface of the object B is likely to rise rapidly. As a result, for example, when measuring the temperature using a thermocouple inside the turntable 11, a discrepancy is likely to occur between the timing of the temperature rise and the timing of its measurement. In this embodiment, the temperature of the surface of the object B is measured using the component thermometer 70, which is a radiation thermometer, so there is little delay in the temperature measurement, and overheating can be prevented.

[0083] (4) The heat source 51 is a light-emitting element that emits light of a wavelength that is absorbed by the substrate W, and the wavelength of the light emitted by the light-emitting element is different from the measurement wavelength of the component thermometer 70. For example, the processing liquid Lp supplied by the processing liquid supply unit 20 is an aqueous solution containing phosphoric acid, the light emitted by the light-emitting element has a wavelength in the range of 350 to 1060 nm, and the measurement wavelength of the component thermometer 70 is 8 to 14 μm. This prevents stray light and reduces measurement errors.

[0084] (5) The apparatus includes a processing liquid thermometer 80 that measures the temperature of the processing liquid Lp supplied to the rotating substrate W in a non-contact manner, and a temperature control unit 92 that controls the heating temperature of the substrate W by the heating unit 50 based on the temperature of the processing liquid Lp measured by the processing liquid thermometer 80, where the processing liquid thermometer 80 is a radiation thermometer that measures the temperature of the processing liquid Lp based on light emitted from the processing liquid Lp, and the measurement wavelength of the processing liquid thermometer 80 is different from the measurement wavelength of the component thermometer 70. For example, the measurement wavelength of the processing liquid thermometer 80 is 2.2 to 2.4 μm, and the measurement wavelength of the component thermometer 70 is 8 to 14 μm.

[0085] Therefore, even if the processing liquid thermometer 80 and the component thermometer 70 must be placed in a narrow area or in close proximity, the temperatures of the respective objects to be measured can be measured, thereby reducing measurement errors.

[0086] (6) The heat source 51 is a light-emitting element that emits light of a wavelength that is absorbed by the substrate W, and the wavelength of the light emitted by the light-emitting element is different from the measurement wavelength of the processing liquid thermometer 80 and the measurement wavelength of the component thermometer 70. For example, the processing liquid Lp supplied by the processing liquid supply unit 20 is an aqueous solution containing phosphoric acid, the light emitted by the light-emitting element has a wavelength in the range of 350 to 1060 nm, the measurement wavelength of the processing liquid thermometer 80 is 2.2 to 2.4 μm, and the measurement wavelength of the component thermometer 70 is 8 to 14 μm. This prevents stray light and reduces measurement errors.

[0087] (7) The rotating holder 10 has a holding member 12 that holds the substrate W, and the member thermometer 70 is provided at a position facing the holding member 12 of the stopped rotating holder 10. Therefore, if the holding member 12 is deformed by heating, the temperature of the holding member 12, which is likely to cause problems in holding and rotating the substrate W, can be monitored, and problems can be prevented in advance.

[0088] (8) The rotation holder 10 has a facing surface 11a facing the substrate W, and the component thermometer 70 is provided at a position facing the facing surface 11a. Therefore, if the rotation holder 10 is deformed by heating, the temperature of the facing surface 11a, which is likely to cause problems in the rotation of the substrate W, can be monitored to prevent such problems from occurring.

[0089] (9) A plurality of heating sources 51 are provided in regions corresponding to different positions in the radial direction of the substrate W, The output of each heating source can be controlled for each region, and the component thermometer 70 is provided at a position where it can measure the temperature near the outermost periphery of the region heated by the heating source 51. Since the temperature of the processing liquid Lp is likely to drop near the outermost periphery, the heating temperature of the heating source 51 tends to be high, and there is a high possibility that the corresponding component M will overheat. By measuring the temperature at such a position, the component thermometer 70 can prevent the component M from overheating.

[0090] [Variations] (1) The component M whose temperature is measured by the component thermometer 70, which is the temperature measuring unit T, may be the heated object B heated by the heating unit 50, and is not limited to the holding member 12 or the opposing surface 11a of the turntable 11. Furthermore, the component thermometer 70 may measure the temperature of only the holding member 12 or only the turntable 11.

[0091] (2) In the above embodiment, the positions of the temperature measurement units T are such that the multiple processing liquid thermometers 80 and component thermometers 70 are arranged in a straight line along the radial direction of the support unit 52 (substrate W), but the positions of the processing liquid thermometers 80 and component thermometers 70 are not limited to this. The processing liquid thermometers 80 only need to correspond to the region heated by the heat source 51, and the component thermometers 70 only need to correspond to the position of the holding member 12, and they do not have to be arranged in a straight line. For example, as shown in FIG. 8, by separating the processing liquid thermometers 80 and component thermometers 70 from each other, measurement errors due to stray light can be reduced.

[0092] (3) A plurality of temperature measurement units T may be provided. For example, a member thermometer 70 may be provided at all or some of the stop positions of a plurality of holding members 12. A member thermometer 70 for measuring the temperature of the holding member 12 and a member thermometer 70 for measuring the temperature of the opposing surface 11a may be provided separately.

[0093] (4) The temperature measuring unit T does not have to be supported by the support unit 52 of the heating unit 50. For example, as shown in Fig. 9, the member thermometer 70 may be held outward of the support unit 52 and disposed at an angle with respect to the axis of rotation of the rotation holding unit 10 so as to be able to measure the temperature of the holding member 12. Such an embodiment is also included in the case where the temperature measuring unit T is disposed opposite the rotation holding unit 10.

[0094] (5) The processing liquid thermometer 80 may be used as the temperature measurement unit T. That is, the object to be heated B may include the processing liquid Lp supplied to the rotating substrate W, and the temperature measurement unit T may have a processing liquid thermometer 80 that measures the temperature of the processing liquid Lp in a non-contact manner. In this case, the processing liquid thermometer 80 may be the same as or different from the processing liquid thermometer 80 for controlling the heating temperature. For example, a processing liquid thermometer 80 may be provided as the temperature measurement unit T in addition to the above-mentioned processing liquid thermometers 80A to 80D.

[0095] In this case, too, it is preferable that the treatment liquid thermometer 80 is a radiation thermometer, and that the wavelength of light emitted by the light-emitting element serving as the heat source 51 is different from the measurement wavelength of the treatment liquid thermometer 80. For example, when the treatment liquid Lp is an aqueous solution containing phosphoric acid, the light emitted by the light-emitting element has a wavelength in the range of 350 to 1060 nm, and the measurement wavelength of the treatment liquid thermometer 80 is 2.2 to 2.4 μm.

[0096] In this embodiment, when the temperature measured by the processing liquid thermometer 80 exceeds a preset temperature, the power supply to the heating unit 50 is stopped. Note that the preset temperature in this case does not need to be the same as the preset temperature for the component thermometer 70. It is preferable to set the temperature of the processing liquid Lp when the component M has a temperature close to its heat resistance temperature. Furthermore, the processing liquid thermometer 80 can measure the temperature of the processing liquid Lp on the substrate W when the spin holder 10 is holding the substrate W, and can measure the temperature of the facing surface 11a of the turntable 11 when the spin holder 10 is not holding the substrate W. Therefore, the set temperature may be different when measuring the temperature of the processing liquid Lp and when measuring the temperature of the facing surface 11a.

[0097] (6) The temperature measurement unit T may measure the temperature of the substrate W, and when the temperature of the substrate W exceeds a preset temperature, the stop control unit 93 may stop the power supply to the heating unit 50. In this case, a radiation thermometer may be used as the temperature measurement unit T. The set temperature does not need to be the same as the set temperature in the case of the component thermometer 70. It is advisable to set the temperature of the substrate W when the component M is close to its heat resistance temperature.

[0098] (7) In the above embodiment, the object to be heated by the heating unit 50, that is, the object that is the target of heating and is directly heated, is the substrate W, and the processing liquid Lp that is in contact with the substrate W is indirectly heated. However, the heating unit 50 may also heat the processing liquid Lp. For example, the wavelength of light output by the light-emitting element that is the heat source 51 may be the wavelength absorbed by the processing liquid Lp. In this case, too, the object to be heated B that is the object to be measured by the temperature measurement unit T may be either the component M or the processing liquid Lp.

[0099] (8) The processing performed by the substrate processing apparatus 1 is not limited to etching processing. Any processing apparatus that supplies the processing liquid Lp while heating the substrate W may be used. For example, a resist removal process that removes a resist film formed on the substrate W may be used.

[0100] (9) The processing liquid Lp is not limited to a phosphoric acid solution. Any processing liquid Lp that requires heating may be used. For example, hydrofluoric acid or the like may be used. In addition, in the case of resist removal processing, SPM (sulfuric acid / hydrogen peroxide solution) or the like may be used as the processing liquid Lp.

[0101] (10) The substrate W to be processed may be a Si substrate having a resist formed on its surface. Furthermore, the substrate W is not limited to a Si substrate. For example, it may be a SiC substrate (silicon carbide wafer).

[0102] (11) The number, arrangement positions, etc. of the heat sources 51 are not limited to the embodiments exemplified above. Furthermore, the number of regions R need only be multiple, and is not limited to four. Furthermore, the region R need not be divided into multiple regions R, and the temperature measurement by the processing liquid thermometer 80 and the heating by the heat sources 51 need not be controlled separately for each region R. Light from the heat sources 51 may be guided and emitted onto the substrate W via an optical fiber. Therefore, the heat sources 51 do not need to be located above the substrate W. Furthermore, the heat sources 51 may be any type that can heat the substrate W in a non-contact manner. For example, light-emitting elements such as highly directional laser diodes may be used as the heat sources 51. Furthermore, the heat sources 51 are not limited to light-emitting elements. For example, they may be heaters that perform resistance heating by passing current through them.

[0103] (12) The support part 52 on which the heat source 51 is placed is a circular member having a diameter equal to or larger than the diameter of the substrate W, but is not limited to this. It is sufficient if light can be irradiated onto the entire surface of the rotating substrate W. For example, it may be a rectangular member large enough to cover the radius of the substrate W. If light can be irradiated over the radius of the substrate W, the entire surface of the substrate W can be irradiated as the substrate W rotates. Furthermore, the support part 52 may be arranged to be swingable in the horizontal direction, and by swinging it while light is emitted from the heat source 51, the entire surface of the substrate W can be irradiated.

[0104] In this way, when the support part 52 is smaller than the diameter of the substrate W, a mechanism for moving the processing liquid nozzle 21 in the horizontal direction may be provided so that the processing liquid nozzle 21 is moved above the substrate W when the processing liquid is supplied. In other words, the processing liquid nozzle 21 may be located anywhere as long as it can supply the processing liquid Lp toward the center of the substrate W while irradiating it with light from the heat source 51.

[0105] The heat source 51 may be arranged so as to irradiate light onto the substrate W from below to heat it. In this case, a support for supporting the heat source 51 may be provided on the opposing surface 11a of the turntable 11 so as not to transmit the rotation from the drive unit 13. Alternatively, a support that rotates at a different rotation speed than the rotation speed (number of rotations per unit time) of the substrate W by the turntable 11 may be provided on the opposing surface 11a of the turntable 11. However, as in the above embodiment, it is preferable to irradiate the upper surface of the substrate W with light from the heat source 51, because heating can be performed starting from the interface with the processing liquid Lp.

[0106] (13) It is also sufficient for the processing liquid thermometer 80 to be able to measure the temperature of the processing liquid Lp on the substrate W. For this reason, a mechanism for moving the support portion of the processing liquid thermometer 80 in the horizontal direction may be provided so that the processing liquid thermometer 80 is moved above the substrate W when measuring the temperature. A substrate thermometer for measuring the temperature of the substrate W may be provided, and the temperature control unit 92 may control the heating temperature of the substrate W by the heating unit 50 based on the temperature of the substrate thermometer.

[0107] (14) In the above embodiment, the mechanism control unit 91 and temperature control unit 92, which are control systems required for normal substrate processing, and the stop control unit 93 and alarm unit 94, which are control systems required for temperature monitoring to prevent overheating, are configured as a common control device 90. However, the stop control unit 93 and alarm unit 94 may be configured as control devices separate from the control device 90.

[0108] [Other embodiments] The above describes embodiments of the present invention and modifications of each part, but these embodiments and modifications are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be embodied in various other forms, and various omissions, substitutions, combinations, and modifications can be made without departing from the spirit of the invention. These embodiments and modifications are included within the scope and spirit of the invention, and are also included in the invention described in the claims. [Explanation of symbols]

[0109] 1. Substrate processing equipment 10 Rotation holding part 11 Rotating table 11a Opposite side 12 Retaining member 13 Drive unit 20 Processing liquid supply unit 21 Processing liquid nozzle 21a Discharge port 22 Processing liquid supply pipe 23 Heater 24 valves 25 Processing liquid supply source 30 Rinse liquid supply unit 31 Rinse liquid nozzle 31a Discharge port 32 Rinse liquid supply pipe 33 Valve 34 Rinse liquid supply source 40 Liquid receiving part 41 Cup section 42 Receiving part 50 Heating section 51, 51A~51D Heating source 52 Support part 53 Cover 53a~53d Through hole 60 Lifting mechanism 61 Arm 62 Pillar 70 Component Thermometer 70a Light receiving part 80, 80A~80D Thermometer for processing liquid 80a Light receiving part 90 Control device 91 Mechanism control unit 92 Temperature control unit 93 Stop control section 94 Information Department 95 Memory section 96 Input section 97 Output section 521 Top plate 521a~521d Through hole B Heated object C center H Hand Lc rinse solution Lp treatment solution M Components T Temperature measuring section W substrate

Claims

1. a rotation holder that holds and rotates the substrate; a processing liquid supply unit that supplies a processing liquid to the substrate that is held and rotated by the rotation holder; a heating unit having a heat source that heats the substrate or a processing liquid in contact with the substrate without contacting the substrate; a temperature measuring unit that is disposed at a position facing the rotation holding unit and that measures the temperature of the object to be heated by the heating unit in a non-contact manner; a stop control unit that stops the supply of power to the heating unit when it is determined that the temperature measured by the temperature measurement unit exceeds a preset temperature; A substrate processing apparatus comprising:

2. the object to be heated is heated together with the substrate or the processing liquid by the heating unit, and includes a component that constitutes the rotation holding unit, 2. The substrate processing apparatus according to claim 1, wherein the temperature measuring unit has a member thermometer for measuring the temperature of the component member.

3. 3. The substrate processing apparatus according to claim 2, wherein the member thermometer is a radiation thermometer that measures the temperature of the component member of the rotation holder based on light radiated from the component member.

4. the heat source is a light-emitting element that emits light of a wavelength that is absorbed by the substrate, 4. The substrate processing apparatus according to claim 3, wherein the wavelength of the light emitted by said light emitting element is different from the wavelength measured by said member thermometer.

5. a processing liquid thermometer for non-contactly measuring the temperature of the processing liquid supplied to the rotating substrate; a temperature control unit that controls a heating temperature of the substrate by the heating unit based on the temperature of the processing liquid measured by the processing liquid thermometer; and the treatment liquid thermometer is a radiation thermometer that measures the temperature of the treatment liquid based on light emitted from the treatment liquid, 5. The substrate processing apparatus according to claim 4, wherein the measurement wavelength of said processing liquid thermometer is different from the measurement wavelength of said component thermometer.

6. 6. The substrate processing apparatus according to claim 5, wherein the wavelength of the light emitted by said light emitting element is different from the wavelength measured by said processing liquid thermometer.

7. the treatment liquid supplied by the treatment liquid supply unit is an aqueous solution containing phosphoric acid, the light emitted by the light-emitting element has a wavelength in the range of 350 to 1060 nm; The measurement wavelength of the treatment liquid thermometer is 2.2 to 2.4 μm, The measurement wavelength of the component thermometer is 8 to 14 μm.

7. The substrate processing apparatus according to claim 6.

8. the object to be heated includes the processing liquid supplied to the rotating substrate, 2. The substrate processing apparatus according to claim 1, wherein the temperature measuring unit has a processing liquid thermometer for measuring the temperature of the processing liquid in a non-contact manner.

9. the heat source is a light-emitting element that emits light of a wavelength that is absorbed by the substrate, the treatment liquid thermometer is a radiation thermometer that measures the temperature of the treatment liquid based on light emitted from the treatment liquid, 9. The substrate processing apparatus according to claim 8, wherein the wavelength of the light emitted by said light emitting element is different from the wavelength measured by said processing liquid thermometer.

10. the treatment liquid supplied by the treatment liquid supply unit is an aqueous solution containing phosphoric acid, the light emitted by the light-emitting element has a wavelength in the range of 350 to 1060 nm; 10. The substrate processing apparatus according to claim 9, wherein the measurement wavelength of said processing liquid thermometer is 2.2 to 2.4 μm.

11. the rotation holder has a holding member that holds the substrate, 3. The substrate processing apparatus according to claim 2, wherein the member thermometer is provided at a position facing the holding member in the stationary rotation holding unit.

12. the rotation holder has a facing surface facing the substrate, 3. The substrate processing apparatus according to claim 2, wherein the member thermometer is provided at a position facing the facing surface.

13. a plurality of the heating sources are provided in regions corresponding to different positions in the radial direction of the substrate; The output of each heating source can be controlled for each area.

3. The substrate processing apparatus according to claim 2, wherein the member thermometer is provided at a position where it can measure the temperature in the vicinity of the outermost periphery of the region heated by the heat source.

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