Mask, mask apparatus, and method of manufacturing mask apparatus

Abstract

To provide a mask capable of improving the accuracy of the position of the mask with respect to a substrate, a mask device, and a method for manufacturing the mask device.SOLUTION: A mask for forming a vapor deposition layer on a substrate by physical vapor deposition may include a metal plate including a first surface, a second surface, and an outer edge, an outer region 30 extending along the outer edge, and an inner region 50 surrounded by the outer region. The inner region may include a plurality of through-holes 52 penetrating the metal plate from the first surface to the second surface. The outer region may include two first side regions 31 adjacent to the inner region in a first direction, two second side regions 32 adjacent to the inner region in a second direction intersecting the first direction, and four corner regions 33 each located between one of the two first side regions and one of the two second side regions. Each of the two first side regions, the two second side regions, and the four corner regions may include at least one alignment mark 41.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] FIELD Embodiments of the present disclosure relate to a mask, a mask apparatus, and a method for manufacturing a mask apparatus. [Background technology]

[0002] A technique for forming layers of electronic devices by physical vapor deposition using a mask is known. For example, in a method for simultaneously manufacturing multiple electronic devices, a step is performed in which each layer of the multiple electronic devices is formed on a substrate by physical vapor deposition. The mask includes multiple through-holes through which incoming particles pass. The incoming particles that pass through the multiple through-holes are deposited on the substrate, thereby forming multiple layers on the substrate that correspond to the shapes and arrangements of the multiple through-holes in the mask. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. WO2005 / 117041 Summary of the Invention [Problem to be solved by the invention]

[0004] As the accuracy of the mask position relative to the substrate decreases, the accuracy of the position of the layer formed on the substrate also decreases. [Means for solving the problem]

[0005] According to one embodiment of the present disclosure, a mask for forming a deposition layer on a substrate by physical vapor deposition may include a metal plate having a first surface, a second surface, and an outer edge, an outer region extending along the outer edge, and an inner region surrounded by the outer region. The inner region may include a plurality of through holes penetrating the metal plate from the first surface to the second surface. The outer region may include two first side regions adjacent to the inner region in a first direction, two second side regions adjacent to the inner region in a second direction intersecting the first direction, and four corner regions, each located between one of the two first side regions and one of the two first side regions. Each of the two first side regions, the two second side regions, and the four corner regions may include at least one alignment mark. [Effects of the Invention]

[0006] According to embodiments of the present disclosure, the accuracy of the position of the mask relative to the substrate can be improved. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 2 is an exploded view showing an example of a mask device. [Figure 2] FIG. 1 is a plan view showing an example of a mask. [Figure 3] FIG. 2 is a plan view showing an example of an outer region and an inner region of a mask. [Figure 4] 4 is a cross-sectional view of the outer region and the inner region taken along line IV-IV in FIG. 3. [Figure 5] 10A to 10C are cross-sectional views showing an example of an alignment step. [Figure 6] FIG. 10 is a plan view showing an example of an alignment step. [Figure 7] FIG. 10 is a plan view showing an example of a detection step for detecting an alignment mark. [Figure 8] 3A and 3B are diagrams showing examples of alignment marks and substrate marks; [Figure 9] FIG. 1 is a cross-sectional view showing an example of a mask device. [Figure 10] FIG. 1 is a plan view showing an example of a mask device. [Figure 11] FIG. 1 is a plan view showing an example of a mask. [Figure 12] FIG. 2 is a cross-sectional view showing an example of an alignment mark group. [Figure 13] FIG. 2 is a cross-sectional view showing an example of a metal plate. [Figure 14] FIG. 2 is a cross-sectional view showing an example of an alignment mark. [Figure 15] FIG. 2 is a plan view showing an example of an alignment mark. [Figure 16] FIG. 2 is a cross-sectional view showing an example of an alignment mark group. [Figure 17] FIG. 2 is a cross-sectional view showing an example of an alignment mark group. [Figure 18] FIG. 1 is a plan view showing an example of a mask. [Figure 19] FIG. 1 is a plan view showing an example of a mask. [Figure 20] FIG. 1 is a plan view showing an example of a mask. [Figure 21] FIG. 1 is a plan view showing an example of a mask. [Figure 22] FIG. 1 is a plan view showing an example of a mask device. [Figure 23] FIG. 1 is a plan view showing an example of a mask. [Figure 24] FIG. 1 is a plan view showing an example of a mask. DETAILED DESCRIPTION OF THE INVENTION

[0008] In this specification and drawings, unless otherwise specified, terms meaning base members such as "substrate," "base material," "plate," "sheet," and "film" are not distinguished from one another solely based on differences in name.

[0009] In this specification and drawings, unless otherwise specified, terms relating to shapes and geometric conditions and values ​​specifying the degree of the shapes and geometric conditions may be interpreted based on the realized function without being bound by strict meaning. Terms relating to shapes and geometric conditions include, for example, "parallel," "orthogonal," etc. Values ​​specifying the degree of the shapes and geometric conditions include, for example, length values, angle values, etc. Interpreted to include.

[0010] In this specification and drawings, unless otherwise specified, when the positional relationship of a second component with respect to a first component is described using terms such as "above," "below," "upper," "lower," "upward," or "belowward," the second component may or may not be in contact with the first component. In this specification and drawings, unless otherwise specified, when the positional relationship of a second component with respect to a first component is described using terms such as "above," "upper," or "upward," the second component may be located "below," "downward," or "below" the first component depending on the usage state of the product.

[0011] In this specification and the drawings, unless otherwise specified, the same or similar reference numerals are used to designate the same parts or components having similar functions. The dimensional ratios of the drawings may differ from the actual ratios for the sake of convenience. In this specification and the drawings, some of the components may be omitted from the drawings.

[0012] Unless otherwise specified in the present specification and drawings, one embodiment of the present specification may be combined with other embodiments or modifications to the extent that no contradiction occurs. Other embodiments or modifications may also be combined with each other to the extent that no contradiction occurs.

[0013] In the present specification and drawings, unless otherwise specified, when a plurality of steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps, and the order of the disclosed steps may be changed to the extent that no contradiction occurs.

[0014] In this specification and drawings, unless otherwise specified, a numerical range expressed by the symbol "to" includes the numerical values ​​before and after the symbol "to." For example, the numerical range defined by the expression "34 to 38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less."

[0015] In one embodiment of the present specification, an example of a mask used to form multiple electronic device layers in a desired pattern on a substrate is described. The electronic device may be an active electronic device such as an organic electroluminescence (EL) display device, or a passive electronic device such as a ceramic capacitor. The electronic device layer is formed by depositing incoming particles on a substrate or the like. A layer formed by depositing incoming particles is also called a vapor-deposited layer. The vapor-deposited layer may be an insulating layer, a semiconductor layer, or a conductive layer. For example, the vapor-deposited layer may be a light-emitting layer of an organic electroluminescence (EL) display device. For example, the vapor-deposited layer may be an internal electrode of a multilayer ceramic capacitor.

[0016] The deposition method performed using a mask is physical vapor deposition. Examples of physical vapor deposition include vacuum deposition, ion plating, and sputtering. Examples of vacuum deposition include induction heating deposition and resistance heating deposition. Examples of ion plating include hollow cathode discharge and arc discharge. Examples of sputtering include magnetron sputtering. In magnetron sputtering, a power source such as a direct current (DC) power source, an alternating current (AC) power source, or a radio frequency (RF) power source may be used depending on the deposition target. When a mask is used in physical vapor deposition, incoming particles are deposited in areas of the substrate that overlap with the through holes of the mask in a planar view. The deposition of the incoming particles forms a deposition layer.

[0017] A first aspect of the present disclosure is a mask for forming a deposition layer on a substrate by physical vapor deposition, comprising: a metal plate including a first surface, a second surface, and an outer edge; an outer region extending along the outer edge; an inner region surrounded by the outer region, the inner region includes a plurality of through holes that penetrate the metal plate from the first surface to the second surface; the outer region includes two first side regions adjacent to the inner region in a first direction, two second side regions adjacent to the inner region in a second direction intersecting the first direction, and four corner regions each located between any one of the two first side regions and any one of the two first side regions, The two first side regions, the two second side regions and the four corner regions are masks each including at least one alignment mark.

[0018] A second aspect of the present disclosure may include the following configuration in the mask according to the first aspect described above: The alignment mark in the first side region may be located at the center of the first side region in the second direction, and the alignment mark in the second side region may be located at the center of the first side region in the first direction.

[0019] A third aspect of the present disclosure may include the following configuration in the mask according to the first or second aspect described above: Each of the two first side regions, the two second side regions, and the four corner regions may include at least one alignment mark group, and the alignment mark group may include at least two alignment marks.

[0020] A fourth aspect of the present disclosure may be the mask according to the third aspect described above, further comprising the following configuration: The alignment mark group may include at least nine alignment marks, and the at least nine alignment marks may be arranged in at least three rows in each of the first direction and the second direction.

[0021] A fifth aspect of the present disclosure may be a mask according to any one of the third and fourth aspects described above, further comprising the following configuration: The alignment mark group may include a main alignment mark, at least one outer alignment mark located outside the main alignment mark, and at least one inner alignment mark located inside the main alignment mark.

[0022] A sixth aspect of the present disclosure may be the mask according to the fifth aspect described above, further comprising the following configuration: The main alignment mark, the outer alignment mark, and the inner alignment mark may each be located on the first surface and include a recess that does not penetrate the metal plate, and the recess of the outer alignment mark may have a depth greater than a depth of the recess of the main alignment mark, and the recess of the inner alignment mark may have a depth smaller than a depth of the recess of the main alignment mark.

[0023] A seventh aspect of the present disclosure may be configured as follows in the mask according to any one of the third to sixth aspects described above: Each of the two first side regions may include a plurality of the alignment mark groups aligned in the second direction, and each of the two second side regions may include a plurality of the alignment mark groups aligned in the first direction.

[0024] An eighth aspect of the present disclosure may be configured as follows in the mask according to any one of the first to seventh aspects described above: The first side region may include a plurality of alignment marks arranged at equal intervals in the second direction, and the second side region may include a plurality of alignment marks arranged at equal intervals in the first direction.

[0025] A ninth aspect of the present disclosure may be the mask according to any one of the first to eighth aspects described above, further comprising the following configuration: The alignment mark may include a first portion extending in the first direction and a second portion extending in the second direction.

[0026] A tenth aspect of the present disclosure may be configured as follows in the mask according to any one of the first to eighth aspects described above: Each of the alignment marks may include a first portion extending in the first direction and a second portion extending in the second direction, the second portions of the alignment marks in the first side region may be connected to each other, and the first portions of the alignment marks in the second side region may be connected to each other.

[0027] An eleventh aspect of the present disclosure may be the mask according to any one of the first to tenth aspects described above, further comprising the following configuration: The metal plate may have a thickness of 8 μm or more and 200 μm or less.

[0028] A twelfth aspect of the present disclosure is a mask apparatus for forming a deposition layer on a substrate by physical vapor deposition, comprising: a frame including an opening; a mask fixed to the frame, The mask is a metal plate including a first surface, a second surface, and an outer edge; an outer region extending along the outer edge and secured to the frame; an inner region overlying the opening and surrounded by the outer region; the inner region includes a plurality of through holes that penetrate the metal plate from the first surface to the second surface; the outer region includes two first side regions adjacent to the inner region in a first direction, two second side regions adjacent to the inner region in a second direction intersecting the first direction, and four corner regions each located between any one of the two first side regions and any one of the two first side regions, The mask device includes at least one alignment mark in each of the two first side regions, the two second side regions, and the four corner regions.

[0029] A thirteenth aspect of the present disclosure may be the mask device according to the twelfth aspect described above, further comprising the following configuration: The two first side regions, the two second side regions, and the four corner regions may each include at least one fixing portion that fixes the outer region to the frame.

[0030] A fourteenth aspect of the present disclosure may be the mask apparatus according to the thirteenth aspect, further comprising the following configuration: The fixing portion may be located inside the alignment mark.

[0031] A fifteenth aspect of the present disclosure is a method for manufacturing a mask device for forming a deposition layer on a substrate by physical vapor deposition, the method comprising: providing a frame including an aperture; an alignment step of adjusting the position of the mask according to claim 1; and a fixing step of fixing the outer region of the mask to the frame, the alignment step includes a detection step of detecting the alignment mark and a tension step of tensioning the mask; The method for manufacturing a mask device includes a first pulling step of pulling the two first side regions in the first direction and a second pulling step of pulling the two second side regions in the second direction.

[0032] A sixteenth aspect of the present disclosure may include the following configuration in the method for manufacturing a mask device according to the fifteenth aspect described above: The two first side regions, the two second side regions, and the four corner regions may each include at least one alignment mark group, and the alignment mark group may include at least a first alignment mark and a second alignment mark, and the detection step may include a first detection step of acquiring a first image related to the first alignment mark, and a second detection step of acquiring a second image related to the second alignment mark when the first image includes a defect.

[0033] A seventeenth aspect of the present disclosure may be the method for manufacturing a mask device according to the sixteenth aspect described above, further comprising the following configuration: the alignment mark group may include a main alignment mark, at least one outer alignment mark located outside the main alignment mark, and at least one inner alignment mark located inside the main alignment mark, and the detection step may include a first detection step of acquiring a first image of the main alignment mark, a second detection step of acquiring a second image of one of the outer alignment mark or the inner alignment mark when the first image includes a defect, and a third detection step of acquiring a third image of the other of the outer alignment mark or the inner alignment mark when the second image includes a defect.

[0034] An eighteenth aspect of the present disclosure may include the following configuration in the method for manufacturing a mask device according to the seventeenth aspect described above: The main alignment mark, the outer alignment mark, and the inner alignment mark may each be located on the first surface and include a recess that does not penetrate the metal plate, and the recess of the outer alignment mark may have a depth greater than a depth of the recess of the main alignment mark, and the recess of the inner alignment mark may have a depth smaller than a depth of the recess of the main alignment mark.

[0035] A nineteenth aspect of the present disclosure may be the method for manufacturing a mask device according to any one of the fifteenth to eighteenth aspects described above, further comprising the following configuration: After the fixing step, the method for manufacturing a mask device may further comprise a trimming step of removing a part of the outer region based on the position of the alignment mark.

[0036] A twentieth aspect of the present disclosure may include the following configuration in the method for manufacturing a mask device according to the nineteenth aspect described above: The first side region may include a plurality of alignment marks arranged at equal intervals in the second direction, and the second side region may include a plurality of alignment marks arranged at equal intervals in the first direction, and in the trimming step, a portion of the first side region may be removed along the plurality of alignment marks in the first side region, and a portion of the second side region may be removed along the plurality of alignment marks in the second side region.

[0037] Embodiments of the present disclosure will be described in detail with reference to the drawings. However, the technical concept of the embodiments of the present disclosure should not be interpreted as being limited to the following specific embodiments.

[0038] Fig. 1 is a diagram showing an example of a mask device 15. The mask device 15 includes a frame 60 and a mask 20 fixed to the frame 60. Fig. 1 is an exploded view of the mask device 15, in which the mask 20 is separated from the frame 60.

[0039] The frame 60 includes a frame member 63 and an opening 64. The opening 64 is surrounded by the frame member 63 in a plan view. "Plan view" means that the object is viewed along a third direction D3 of the mask device 15. The third direction D3 is the normal direction of a first surface of the mask 20, which will be described later.

[0040] The frame member 63 includes a frame first surface 61 and a frame second surface 62. The frame first surface 61 faces the mask 20. The frame second surface 62 is located on the opposite side of the frame first surface 61 in the third direction D3. The incoming particles move in a direction from the frame second surface 62 toward the frame first surface 61 and pass through the opening 64.

[0041] The mask 20 includes a metal plate 22. The metal plate 22 includes a first surface 23, a second surface 24, and an outer edge 25. The second surface 24 faces the frame first surface 61 of the frame 60. The first surface 23 is located on the opposite side of the second surface 24 in the third direction D3. The first surface 23 faces a substrate (not shown). The incoming particles that pass through the mask 20 are deposited on the substrate.

[0042] The outer edge 25 of the mask 20 defines the outline of the mask 20 in a plan view. The outer edge 25 may include two first sides 26 opposing each other in a first direction D1, two second sides 27 opposing each other in a second direction D2, and four corners 28. The second direction D2 is a direction that intersects with the first direction D1. The second direction D2 may be perpendicular to the first direction D1. Each of the four corners 28 is located between one of the two first sides 26 and one of the two second sides 27.

[0043] Each of the two first sides 26 may extend linearly. For example, each of the two first sides 26 may extend in the second direction D2. Each of the two second sides 27 may extend linearly. For example, each of the two second sides 27 may extend in the first direction D1.

[0044] The area of ​​the mask 20 is divided into an outer area 30 and an inner area 50 in a plan view.

[0045] The outer region 30 is a region of the mask 20 that extends along the outer edge 25. The outer region 30 includes a plurality of alignment marks 41. The alignment marks 41 are used to adjust the relative position of the mask 20 with respect to a substrate in a method of manufacturing an electronic device using the mask 20. The outer region 30 at least partially overlaps a frame member 63 of the frame 60 in a plan view.

[0046] The inner region 50 is a region of the mask 20 that is surrounded by the outer region 30 in a plan view. The inner region 50 includes a plurality of through holes 52 that penetrate the metal plate 22 from the first surface 23 to the second surface 24. The inner region 50 overlaps with the opening 64 of the frame 60 in a plan view. The flying particles that pass through the through holes 52 of the mask 20 are deposited on the substrate.

[0047] The outer region 30 and the inner region 50 of the mask 20 will be described in detail below. FIG.

[0048] The outer region 30 may include two first side regions 31 , two second side regions 32 and four corner regions 33 .

[0049] The two first side regions 31 are adjacent to the inner region 50 in the first direction D1. In other words, the inner region 50 is located between the two first side regions 31 in the first direction D1. Each of the two first side regions 31 may extend along one first side 26.

[0050] The two second side regions 32 are adjacent to the inner region 50 in the second direction D2. In other words, the inner region 50 is located between the two second side regions 32 in the second direction D2. Each of the two second side regions 32 may extend along one second side 27.

[0051] Each of the four corner regions 33 is located between one of the two first side regions 31 and one of the two second side regions 32. Each of the four corner regions 33 is adjacent to one of the two first side regions 31 and one of the two second side regions 32. Each of the four corner regions 33 may include one corner 28.

[0052] The two first side regions 31, the two second side regions 32, and the four corner regions 33 may each include at least one alignment mark 41. In the example shown in Figure 2, the two first side regions 31, the two second side regions 32, and the four corner regions 33 each include one alignment mark 41.

[0053] The alignment marks 41 in the two first side regions 31 may each be located in the center of the first side region 31 in the second direction D2. For example, the alignment marks 41 in the two first side regions 31 may each overlap the first intermediate line 31L or be close to the first intermediate line 31L. "Close to the first intermediate line 31L" means that the distance between the alignment mark 41 and the first intermediate line 31L in the second direction D2 is equal to or less than the first threshold value TH1.

[0054] The first intermediate line 31L is an imaginary straight line that passes through two intermediate points P1. The two intermediate points P1 are midpoints in the second direction D2 of portions of the first boundary lines 35 that are located between the two first side regions 31 and the inner region 50, respectively. The two first boundary lines 35 define boundaries between the two first side regions 31 and the inner region 50, respectively.

[0055] Each of the two first boundary lines 35 may be a straight line extending in the second direction D2. Each of the two first boundary lines 35 may be in contact with at least one through hole 52. All of the through holes 52 in the inner region 50 may be located between the two first boundary lines 35.

[0056] The first threshold TH1 is, for example, 1.0 mm, and may be 2.0 mm, 5.0 mm, 10.0 mm, or 20.0 mm.

[0057] The first threshold TH1 may be determined relative to the dimension L2, which is the dimension of the inner region 50 in the second direction D2. The ratio of the first threshold TH1 to the dimension L2, TH1 / L2, is, for example, 0.01, or may be 0.02, 0.05, 0.10, or 0.20.

[0058] The alignment marks 41 in the two second side regions 32 may each be located in the center of the second side region 32 in the first direction D1. For example, the alignment marks 41 in the two second side regions 32 may each overlap the second intermediate line 32L or be close to the second intermediate line 32L. "Close to the second intermediate line 32L" means that the distance between the alignment mark 41 and the second intermediate line 32L in the first direction D1 is equal to or less than the second threshold value TH2.

[0059] The second intermediate line 32L is an imaginary straight line that passes through the two intermediate points P2. The two intermediate points P2 are the midpoints in the first direction D1 of the portions of the second boundary lines 36 that are located between the two second side regions 32 and the inner region 50, respectively. The two second boundary lines 36 define the boundaries between the two second side regions 32 and the inner region 50, respectively.

[0060] Each of the two second boundary lines 36 may be a straight line extending in the first direction D1. Each of the two second boundary lines 36 may be in contact with at least one through hole 52. All of the through holes 52 in the inner region 50 may be located between the two second boundary lines 36.

[0061] The second threshold TH2 is, for example, 1.0 mm, and may be 2.0 mm, 5.0 mm, 10.0 mm, or 20.0 mm.

[0062] The second threshold TH2 may be determined relative to the dimension L1. The dimension L1 is the dimension of the inner region 50 in the first direction D1 at the boundary between the second side region 32 and the inner region 50. TH2 / L1, which is the ratio of the second threshold TH2 to the dimension L1, is, for example, 0.01, and may also be 0.02, 0.05, 0.10, or 0.20.

[0063] The boundary between the corner region 33 and the first side region 31 may be defined by a second boundary line 36. The boundary between the corner region 33 and the second side region 32 may be defined by a first boundary line 35.

[0064] The intersection of the first intermediate line 31L and the second intermediate line 32L defines the center point 21 of the mask 20.

[0065] The inner region 50 may include a plurality of through-hole groups 51. The plurality of through-hole groups 51 may be aligned in the first direction D1 and the second direction D2. Each of the plurality of through-hole groups 51 includes a plurality of through-holes 52.

[0066] In each through-hole group 51, the plurality of through-holes 52 may be arranged regularly in two directions. For example, the plurality of through-holes 52 may be arranged regularly in the first direction D1 and the second direction D2.

[0067] When the electronic device manufactured using the mask 20 is an active electronic device such as an organic EL display device, one through-hole group 51 may correspond to one active electronic device. For example, one active electronic device may include a plurality of elements, and layers of the plurality of elements may each be formed by flying particles that have passed through each of the plurality of through-holes 52 in one through-hole group 51.

[0068] When the electronic device manufactured using the mask 20 is a passive electronic device such as a multilayer ceramic capacitor, one through-hole 52 may correspond to one passive electronic device. For example, a layer of one passive electronic device may be formed by the incoming particles passing through one through-hole 52.

[0069] By using the mask 20, multiple electronic device layers can be formed simultaneously on a substrate, and the use of the mask 20 allows for increased accuracy in the shape and placement of the multiple electronic device layers.

[0070] The dimension L1 of the inner region 50 in the first direction D1 may be, for example, 100 mm or more, 300 mm or more, 500 mm or more, 700 mm or more, or 1000 mm or more. The dimension L1 may be, for example, 500 mm or less, 1000 mm or less, 1500 mm or less, 2000 mm or less, or 2500 mm or less. The range of the dimension L1 may be defined by a first group consisting of 100 mm, 300 mm, 500 mm, 700 mm, and 1000 mm, and / or a second group consisting of 500 mm, 1000 mm, 1500 mm, 2000 mm, and 2500 mm. The range of the dimension L1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension L1 may be defined by a combination of any two of the values ​​included in the first group. The range of the dimension L1 may be determined by a combination of any two of the values ​​included in the second group described above. The dimension L1 may be, for example, 100 mm or more and 2500 mm or less, 100 mm or more and 2000 mm or less, 100 mm or more and 1500 mm or less, 100 mm or more and 1000 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 300 mm or less, 300 mm or more and 2500 mm or less, 300 mm or more and 2000 mm or less, 300 mm or more and 1500 mm or less, 300 mm or more and 1000 mm or less, 300 mm or more and 500 mm or less, 500 mm or more and 2500 mm or less, or 500 mm or more and 2000 mm or less. , may be 500mm or more and 1500mm or less, may be 500mm or more and 1000mm or less, may be 500mm or more and 700mm or less, may be 700mm or more and 2500mm or less, may be 700mm or more and 2000mm or less, may be 700mm or more and 1500mm or less, may be 700mm or more and 1000mm or less, may be 1000mm or more and 2500mm or less, may be 1000mm or more and 2000mm or less, may be 1000mm or more and 1500mm or less, may be 1500mm or more and 2500mm or less, may be 1500mm or more and 2000mm or less, may be 2000mm or more and 2500mm or less.

[0071] The dimension L2 of the inner region 50 in the second direction D2 may be, for example, 100 mm or more, 300 mm or more, 500 mm or more, 700 mm or more, or 1000 mm or more. The dimension L2 may be, for example, 500 mm or less, 1000 mm or less, 1500 mm or less, 2000 mm or less, or 2500 mm or less. The range of the dimension L2 may be defined by a first group consisting of 100 mm, 300 mm, 500 mm, 700 mm, and 1000 mm, and / or a second group consisting of 500 mm, 1000 mm, 1500 mm, 2000 mm, and 2500 mm. The range of the dimension L2 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension L2 may be defined by a combination of any two of the values ​​included in the first group. The range of the dimension L2 may be determined by a combination of any two of the values ​​included in the second group described above. The dimension L2 may be, for example, 100 mm or more and 2500 mm or less, 100 mm or more and 2000 mm or less, 100 mm or more and 1500 mm or less, 100 mm or more and 1000 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 300 mm or less, 300 mm or more and 2500 mm or less, 300 mm or more and 2000 mm or less, 300 mm or more and 1500 mm or less, 300 mm or more and 1000 mm or less, 300 mm or more and 500 mm or less, 500 mm or more and 2500 mm or less, or 500 mm or more and 2000 mm or less. , may be 500mm or more and 1500mm or less, may be 500mm or more and 1000mm or less, may be 500mm or more and 700mm or less, may be 700mm or more and 2500mm or less, may be 700mm or more and 2000mm or less, may be 700mm or more and 1500mm or less, may be 700mm or more and 1000mm or less, may be 1000mm or more and 2500mm or less, may be 1000mm or more and 2000mm or less, may be 1000mm or more and 1500mm or less, may be 1500mm or more and 2500mm or less, may be 1500mm or more and 2000mm or less, may be 2000mm or more and 2500mm or less.

[0072] As will be described later, the manufacturing method of the mask device 15 includes an alignment step of adjusting the position of the mask 20. In the alignment step, the position of the mask 20 is adjusted based on the alignment mark 41. The larger the dimensions L1 and L2 of the mask 20 are, and the smaller the dimensions or pitch of the through holes 52 are, the more difficult the alignment step becomes.

[0073] The mask 20 of this embodiment includes alignment marks 41 located in each of the two first side regions 31, two second side regions 32, and four corner regions 33. Based on the alignment marks 41, the positions of the two first side regions 31, two second side regions 32, and four corner regions 33 are appropriately adjusted. When the positions of the two first side regions 31, two second side regions 32, and four corner regions 33 are appropriately adjusted, the positions of the multiple through holes 52 in the inner region 50 are also appropriately adjusted. According to this embodiment, even when the dimensions L1 and L2 of the mask 20 are large, the positions of the multiple through holes 52 are appropriately adjusted.

[0074] 3 is a plan view showing an example of the outer region 30 and the inner region 50 of the mask 20. The alignment mark 41 may include a first portion 43 and a second portion 45 connected to the first portion 43. The first portion 43 and the second portion 45 extend in two different directions. For example, the first portion 43 extends in a first direction D1, and the second portion 45 extends in a second direction D2.

[0075] The first portion 43 and the second portion 45 may intersect with each other. For example, the alignment mark 41 may have a cross shape.

[0076] The first portion 43 includes two side edges 431. Each of the two side edges 431 of the first portion 43 may include a portion extending in the first direction D1.

[0077] The first portion 43 has a dimension L3 in the first direction D1. The dimension L3 may be, for example, 20 μm or more, 50 μm or more, or 100 μm or more. The dimension L3 may be, for example, 200 μm or less, 500 μm or less, 1000 μm or less, 5000 μm or less, or 10000 μm or less. The range of the dimension L3 may be defined by a first group consisting of 20 μm, 50 μm, and 100 μm, and / or a second group consisting of 200 μm, 500 μm, 1000 μm, 5000 μm, and 10000 μm. The range of the dimension L3 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension L3 may be defined by a combination of any two of the values ​​included in the first group. The range of the dimension L3 may be determined by a combination of any two of the values ​​included in the second group described above. The dimension L3 may be, for example, 20 μm or more and 10,000 μm or less, 20 μm or more and 5,000 μm or less, 20 μm or more and 1,000 μm or less, 20 μm or more and 500 μm or less, 20 μm or more and 200 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, 50 μm or more and 10,000 μm or less, 50 μm or more and 5,000 μm or less, 50 μm or more and 1,000 μm or less, 50 μm or more and 500 μm or less, 50 μm or more and 200 μm or less, or 50 μm or more and 100 μm or less. It may be 100 μm or more and 10,000 μm or less, 100 μm or more and 5,000 μm or less, 100 μm or more and 1,000 μm or less, 100 μm or more and 500 μm or less, 100 μm or more and 200 μm or less, 200 μm or more and 10,000 μm or less, 200 μm or more and 5,000 μm or less, 200 μm or more and 1,000 μm or less, 200 μm or more and 500 μm or less, 500 μm or more and 10,000 μm or less, 500 μm or more and 5,000 μm or less, or 500 μm or more and 1,000 μm or less.

[0078] The first portion 43 has a dimension S1 in the second direction D2. The dimension S1 is the maximum distance between the two side edges 431 in the second direction D2. The dimension S1 may be smaller than the dimension L3. For example, the dimension S1 may be 10 μm or more, 20 μm or more, or 50 μm or more. The dimension S1 may be 100 μm or less, 200 μm or less, or 500 μm or less. The range of the dimension S1 may be defined by a first group consisting of 10 μm, 20 μm, and 50 μm, and / or a second group consisting of 100 μm, 200 μm, and 500 μm. The range of the dimension S1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension S1 may be defined by a combination of any two of the values ​​included in the first group. The range of the dimension S1 may be determined by a combination of any two of the values ​​included in the second group described above. The dimension S1 may be, for example, 10 μm to 500 μm, 10 μm to 200 μm, 10 μm to 100 μm, 10 μm to 50 μm, 10 μm to 20 μm, 20 μm to 500 μm, 20 μm to 200 μm, 20 μm to 100 μm, 20 μm to 50 μm, 50 μm to 500 μm, 50 μm to 200 μm, 50 μm to 100 μm, 100 μm to 500 μm, 100 μm to 200 μm, or 200 μm to 500 μm.

[0079] The second portion 45 includes two side edges 451. Each of the two side edges 451 of the second portion 45 may include a portion extending in the second direction D2.

[0080] The second portion 45 has a dimension L4 in the second direction D2. The numerical range of the dimension L4 may be the same as the above-mentioned numerical range of the dimension L3.

[0081] The second portion 45 has a dimension S2 in the first direction D1. The dimension S2 is the maximum distance between the two side edges 451 in the first direction D1. The dimension S2 may be smaller than the dimension L4. The numerical range of the dimension S2 may be the same as the above-mentioned numerical range of the dimension S1.

[0082] FIG. 4 is a cross-sectional view of the outer region 30 and the inner region 50 taken along line IV-IV in FIG.

[0083] The through hole 52 in the inner region 50 may include a first recess 53, a second recess 54, and a connecting portion 55 connecting the first recess 53 and the second recess 54. The first recess 53 is located on the first surface 23 and is recessed toward the second surface 24. The second recess 54 is located on the second surface 24 and is recessed toward the first surface 23. The first recess 53 and the second recess 54 are connected by the connecting portion 55 to form the through hole 52. The first recess 53 is formed by processing the first surface 23 of the metal plate 22. The second recess 54 is formed by processing the second surface 24 of the metal plate 22. Examples of processing methods include wet etching and laser processing.

[0084] The first recess 53 has a dimension R1 in a plan view. The second recess 54 has a dimension R2 in a plan view. The dimension R2 may be greater than the dimension R1. For example, the outline of the second recess 54 may surround the outline of the first recess 53 in a plan view.

[0085] The connecting portion 55 is located between the first surface 23 and the second surface 24. The connecting portion 55 may have a continuous contour around the entire circumference. The dimension R of the connecting portion 55 in a plan view may be smaller than the dimension R1 of the first recess 53 and the dimension R2 of the second recess 54.

[0086] The dimension R may be, for example, 10 μm or more, 15 μm or more, 20 μm or more, or 25 μm or more. The dimension R may be, for example, 40 μm or less, 45 μm or less, 50 μm or less, 55 μm or less, 100 μm or less, 200 μm or less, 500 μm or less, or 1000 μm or less. The range of the dimension R may be defined by a first group consisting of 10 μm, 15 μm, 20 μm, and 25 μm, and / or a second group consisting of 40 μm, 45 μm, 50 μm, 55 μm, 100 μm, 200 μm, 500 μm, and 1000 μm. The range of the dimension R may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the dimension R may be determined by a combination of any two of the values ​​included in the first group described above. The range of the dimension R may be determined by a combination of any two of the values ​​included in the second group described above. For example, the dimension R may be 10 μm or more and 1000 μm or less, 10 μm or more and 500 μm or less, 10 μm or more and 200 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 55 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 45 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, or 15 μm or more and 1000 μm or less. may be 15 μm or more and 500 μm or less, may be 15 μm or more and 200 μm or less, may be 15 μm or more and 100 μm or less, may be 15 μm or more and 55 μm or less, may be 15 μm or more and 50 μm or less, may be 15 μm or more and 45 μm or less, may be 15 μm or more and 40 μm or less, may be 15 μm or more and 25 μm or less, may be 15 μm or more and 20 μm or less, may be 20 μm or more and 1000 μm or less, may be 20 μm or more and 500 μm or less, may be 20 μm or more and 200 μm or less,It may be 20 μm or more and 100 μm or less, 20 μm or more and 55 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 45 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 1000 μm or less, 25 μm or more and 500 μm or less, 25 μm or more and 200 μm or less, 25 μm or more and 100 μm or less, or 25 μm or more and 55 μm or less. It may be 25 μm or more and 50 μm or less, 25 μm or more and 45 μm or less, 25 μm or more and 40 μm or less, 40 μm or more and 1000 μm or less, 40 μm or more and 500 μm or less, 40 μm or more and 200 μm or less, 40 μm or more and 100 μm or less, 40 μm or more and 55 μm or less, 40 μm or more and 50 μm or less, 40 μm or more and 45 μm or more, 45 μm or more and 100 0 μm or less, 45 μm or more and 500 μm or less, 45 μm or more and 200 μm or less, 45 μm or more and 100 μm or less, 45 μm or more and 55 μm or less, 45 μm or more and 50 μm or more, 50 μm or more and 1000 μm or less, 50 μm or more and 500 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 100 μm or less, or 50 μm or more and 55 μm or less , may be 55 μm or more and 1000 μm or less, may be 55 μm or more and 500 μm or less, may be 55 μm or more and 200 μm or less, may be 55 μm or more and 100 μm or less, may be 100 μm or more and 1000 μm or less, may be 100 μm or more and 500 μm or less, may be 100 μm or more and 200 μm or less, may be 200 μm or more and 1000 μm or less, may be 200 μm or more and 500 μm or less, or may be 500 μm or more and 1000 μm or less.

[0087] The dimension R is determined by the light transmitted through the through-hole 52. Specifically, parallel light is incident on one of the first surface 23 or the second surface 24 of the mask 20 along the normal direction of the mask 20, transmitted through the through-hole 52, and emitted from the other of the first surface 23 or the second surface 24. The dimension of the area occupied by the emitted light in the surface direction of the mask 20 is adopted as the dimension R of the connection portion 55.

[0088] The symbol H1 represents the distance in the third direction D3 from the first surface 23 to the connection portion 55. The distance H1 may be less than half the thickness T0 of the metal plate 22. The ratio of the distance H1 to the thickness T0, H1 / T0, may be, for example, 0.05 or more, 0.10 or more, or 0.15 or more. H1 / T0 may be, for example, 0.20 or less, 0.30 or less, 0.40 or less, or 0.50 or less. The range of H1 / T0 may be defined by a first group consisting of 0.05, 0.10, and 0.15, and / or a second group consisting of 0.20, 0.30, 0.40, and 0.50. The range of H1 / T0 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of H1 / T0 may be determined by a combination of any two of the values ​​included in the first group described above. The range of H1 / T0 may be determined by a combination of any two of the values ​​included in the second group described above. H1 / T0 may be, for example, 0.05 or more and 0.50 or less, 0.05 or more and 0.40 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.15 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.50 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, or 0.1 It may be 0 or more and 0.15 or less, 0.15 or more and 0.50 or less, 0.15 or more and 0.40 or less, 0.15 or more and 0.30 or less, 0.15 or more and 0.20 or less, 0.20 or more and 0.50 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, 0.30 or more and 0.50 or less, 0.30 or more and 0.40 or less, or 0.40 or more and 0.50 or less.

[0089] 4, the alignment mark 41 may include a recess 42 located on the first surface 23. The recess 42 is recessed toward the second surface 24. The recess 42 does not have to penetrate all the way through the metal plate 22. The recess 42 is formed by processing the first surface 23. Examples of processing methods include wet etching and laser processing.

[0090] The recess 42 may be formed in the first surface 23 at the same time as the first recess 53. For example, the recess 42 and the first recess 53 may be formed at the same time by a step of partially wet etching the first surface 23.

[0091] Although not shown, the recess 42 may be formed in the second surface 24. In this case, the recess 42 and the second recess 54 may be formed simultaneously by a step of partially wet etching the second surface 24.

[0092] The recess 42 has a depth H2. The depth H2 is the maximum distance from the bottom of the recess 42 to the first surface 23 in the third direction D3.

[0093] In a detection process described below, the alignment mark 41 is detected based on the intensity of light reflected by the first surface 23 and the alignment mark 41. The light irradiated onto the recesses 42 of the alignment mark 41 is reflected not only in the third direction D3, but also in directions other than the third direction D3. On the other hand, most of the light irradiated onto the first surface 23 is reflected in the third direction D3. Therefore, the intensity of the light reflected by the recesses 42 of the alignment mark 41 is smaller than the intensity of the light reflected by the first surface 23. The alignment mark 41 is detected based on the difference in the intensity of the reflected light.

[0094] The greater the depth H2 of the recess 42, the smaller the intensity of light reflected at the recess 42 of the alignment mark 41. Therefore, the greater the depth H2 of the recess 42, the more noticeable the alignment mark 41 is in an image showing the distribution of the intensity of reflected light. On the other hand, the greater the depth H2 of the recess 42, the more likely it is that normal defects caused by particles distributed inside the metal plate 22, as described below, will occur in the alignment mark 41. The depth H2 of the recess 42 is determined taking these factors into consideration.

[0095] The depth H2 of the recess 42 may be, for example, 1.0 μm or more, 2.0 μm or more, or 4.0 μm or more. The depth H2 may be, for example, 7.0 μm or less, 10.0 μm or less, or 15.0 μm or less. The range of the depth H2 may be defined by a first group consisting of 1.0 μm, 2.0 μm, and 4.0 μm, and / or a second group consisting of 7.0 μm, 10.0 μm, and 15.0 μm. The range of the depth H2 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the depth H2 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the depth H2 may be defined by a combination of any two of the values ​​included in the second group described above. The depth H2 may be, for example, 1.0 μm or more and 15.0 μm or less, 1.0 μm or more and 10.0 μm or less, 1.0 μm or more and 7.0 μm or less, 1.0 μm or more and 4.0 μm or less, 1.0 μm or more and 2.0 μm or less, 2.0 μm or more and 15.0 μm or less, 2.0 μm or more and 10.0 μm or less, 2.0 μm or more and 7.0 μm or less, 2.0 μm or more and 4.0 μm or less, 4.0 μm or more and 15.0 μm or less, 4.0 μm or more and 10.0 μm or less, 4.0 μm or more and 7.0 μm or less, 7.0 μm or more and 15.0 μm or less, 7.0 μm or more and 10.0 μm or less, or 10.0 μm or more and 15.0 μm or less.

[0096] The depth H2 of the recess 42 may be greater than the distance H1. The ratio H2 / H1 of the depth H2 to the distance H1 may be, for example, 1.10 or greater, 1.30 or greater, or 1.50 or greater. H2 / H1 may be, for example, 2.00 or less, 2.50 or less, 3.00 or less, 4.00 or less, or 5.00 or less. The range of H2 / H1 may be defined by a first group consisting of 1.10, 1.30, and 1.50 and / or a second group consisting of 2.00, 2.50, 3.00, 4.00, and 5.00. The range of H2 / H1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of H2 / H1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of H2 / H1 may be determined by a combination of any two of the values ​​included in the second group described above. H2 / H1 may be, for example, 1.10 or more and 5.00 or less, 1.10 or more and 4.00 or less, 1.10 or more and 3.00 or less, 1.10 or more and 2.50 or less, 1.10 or more and 2.00 or less, 1.10 or more and 1.50 or less, 1.10 or more and 1.30 or more and 5.00 or less, 1.30 or more and 4.00 or less, 1.30 or more and 3.00 or less, 1.30 or more and 2.50 or less, 1.30 or more and 2.00 or less, 1.30 or more and 1.50 or less, or 1.50 or more and 5.00 or less. or less, 1.50 or more and 4.00 or less, 1.50 or more and 3.00 or less, 1.50 or more and 2.50 or less, 1.50 or more and 2.00 or less, 2.00 or more and 5.00 or less, 2.00 or more and 4.00 or less, 2.00 or more and 3.00 or less, 2.00 or more and 2.50 or less, 2.50 or more and 5.00 or less, 2.50 or more and 4.00 or less, 2.50 or more and 3.00 or less, 3.00 or more and 5.00 or less, 3.00 or more and 4.00 or less, or 4.00 or more and 5.00 or less.

[0097] The distance H1 and depth H2 are calculated based on a cross-sectional image of a sample of the mask 20. The sample of the mask 20 is prepared by cutting the mask 20 along a straight line extending in the first direction D1. The cross-sectional image of the sample is obtained by observing the cross-section of the sample using a digital microscope or an electron microscope. When the dimension of the measurement object is 100 μm or more, a digital microscope is used. When the dimension of the measurement object is less than 100 μm, an electron microscope is used.

[0098] The distance H1 is calculated by averaging the measurement values ​​for the ten through holes 52. The ten through holes 52 include one through hole 52 that is closest to the center point 21 of the mask 20. This one through hole 52 is also referred to as the central through hole. The ten through holes 52, including the central through hole, are aligned in the first direction D1. A straight line passing through the ten through holes 52 including the central through hole is also referred to as a sample line.

[0099] Depth H2 is calculated by averaging the measurement values ​​in the recess 42 of one alignment mark 41. One alignment mark 41 is selected from either of the two first side regions 31. If multiple alignment marks 41 are formed in one first side region 31, the alignment mark 41 that is closest to the sample line and closest to the inner region 50 is selected.

[0100] The depths H2 of the recesses 42 of the two alignment marks 41 may be measured and an average value may be calculated. The two alignment marks 41 are selected one from each of the two first side regions 31. It is preferable that the measured values ​​of the two depths H2 are each equal to or greater than the average value × 0.5 and equal to or less than the average value × 1.5.

[0101] The materials of the mask 20 and the frame 60 will now be described. An iron alloy containing nickel can be used as the main material for the mask 20 and the frame 60. The iron alloy may further contain cobalt in addition to nickel. For example, the metal plate 22 of the mask 20 can be made of an iron alloy containing 28% to 54% by mass of nickel and cobalt in total, and 0% to 6% by mass of cobalt. This reduces the difference between the thermal expansion coefficients of the mask 20 and the frame 60 and the glass-containing substrate. This prevents the dimensional accuracy and positional accuracy of a layer formed on a substrate by physical vapor deposition from decreasing due to thermal expansion of the mask 20, the frame 60, the substrate, etc.

[0102] The total content of nickel and cobalt in the metal plate 22 of the mask 20 may be 28% by mass or more and 38% by mass or less. In this case, specific examples of iron alloys containing nickel or nickel and cobalt include Invar, Super Invar, and Ultra Invar. Invar is an iron alloy containing 34% by mass or more and 38% by mass or less of nickel, with the balance being iron and unavoidable impurities. Super Invar is an iron alloy containing 30% by mass or more and 34% by mass or less of nickel, cobalt, and the balance being iron and unavoidable impurities. Ultra Invar is an iron alloy containing 28% by mass or more and 34% by mass or less of nickel, 2% by mass or more and 7% by mass or less of cobalt, 0.1% by mass or more and 1.0% by mass or less of manganese, 0.10% by mass or less of silicon, 0.01% by mass or less of carbon, and the balance being iron and unavoidable impurities.

[0103] The total content of nickel and cobalt in the mask 20 may be 38% by mass or more and 54% by mass or less. For example, the metal plate 22 of the mask 20 may be made of an iron alloy containing 38% by mass or more and 54% by mass or less of nickel, with the remainder being iron and unavoidable impurities. Such a metal plate 22 may be manufactured by a plating method.

[0104] If the temperatures of the mask 20, frame 60, and substrate do not reach high temperatures during physical vapor deposition, the thermal expansion coefficients of the mask 20 and frame 60 do not need to be equal to the thermal expansion coefficient of the substrate. In this case, materials other than the iron alloys described above may be used to form the mask 20. For example, iron alloys other than the nickel-containing iron alloys described above, such as iron alloys containing chromium, may be used. As the iron alloy containing chromium, for example, an iron alloy known as stainless steel may be used. Furthermore, alloys other than iron alloys, such as nickel or nickel-cobalt alloys, may also be used.

[0105] The thickness T0 of the metal plate 22 of the mask 20 may be, for example, 8 μm or more, 15 μm or more, 30 μm or more, or 50 μm or more. The thickness T0 may be, for example, 70 μm or less, 100 μm or less, 150 μm or less, or 200 μm or less. The range of the thickness T0 may be defined by a first group consisting of 8 μm, 15 μm, 30 μm, and 50 μm, and / or a second group consisting of 70 μm, 100 μm, 150 μm, and 200 μm. The range of the thickness T0 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T0 may be defined by a combination of any two of the values ​​included in the first group. The range of the thickness T0 may be defined by a combination of any two of the values ​​included in the second group. The thickness T0 may be, for example, 8 μm or more and 200 μm or less, 8 μm or more and 150 μm or less, 8 μm or more and 100 μm or less, 8 μm or more and 70 μm or less, 8 μm or more and 50 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 15 μm or less, 15 μm or more and 200 μm or less, 15 μm or more and 150 μm or less, 15 μm or more and 100 μm or less, 15 μm or more and 70 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 30 μm or less, 30 μm or more and 200 μm or less, 30 It may be from 1 μm to 150 μm, from 30 μm to 100 μm, from 30 μm to 70 μm, from 30 μm to 50 μm, from 50 μm to 200 μm, from 50 μm to 150 μm, from 50 μm to 100 μm, from 50 μm to 70 μm, from 70 μm to 200 μm, from 70 μm to 150 μm, from 70 μm to 100 μm, from 100 μm to 200 μm, from 100 μm to 150 μm, or from 150 μm to 200 μm.

[0106] By setting the thickness T0 to 200 μm or less, it is possible to prevent flying particles from adhering to the wall surface of the through-holes 52 before passing through the through-holes 52. This increases the utilization efficiency of the physical vapor deposition material. By setting the thickness T0 to 8 μm or more, it is possible to ensure the strength of the mask 20 and prevent damage or deformation of the mask 20. In terms of the strength of the mask 20, it is more preferable that the thickness T0 be 50 μm or more.

[0107] A contact-type measuring method is used to measure the thickness of the mask 20. As the contact-type measuring device, a Litematic VL-50 manufactured by Mitutoyo Corporation is used.

[0108] A method for manufacturing the mask device 15 will now be described.

[0109] A step of preparing the mask 20 is carried out. For example, the mask 20 is manufactured by processing a metal plate 22. The metal plate 22 is manufactured by, for example, rolling.

[0110] A step of preparing a frame 60 is performed. The frame 60 includes a frame member 63 and an opening 64.

[0111] Subsequently, an alignment step is performed to adjust the position of the mask 20. Figures 5 and 6 are a cross-sectional view and a plan view showing an example of the alignment step. The alignment step may include a detection step and a tension step.

[0112] In the detection process, at least one alignment mark 41 is detected in each of the two first side regions 31, the two second side regions 32, and the four corner regions 33. In the detection process, an image of the alignment mark 41 may be acquired using a detection device 75. The detection device 75 may irradiate the alignment mark 41 with light. For example, the detection device 75 may irradiate the alignment mark 41 and the first surface 23 around the alignment mark 41 with light along the third direction D3. The alignment mark 41 is detected based on a difference in intensity of the reflected light.

[0113] 7 is a plan view showing an example of a method for detecting alignment mark 41. In the detection step, a center point 47 of alignment mark 41 may be calculated. Center point 47 may be calculated as the intersection point of first line 44 and second line 46.

[0114] The first straight line 44 is the center line of the two first approximate straight lines 431L. The shortest distances from each point on the first straight line 44 to the two first approximate straight lines 431L are equal to each other. The two first approximate straight lines 431L approximate the two side edges 431 of the first portion 43.

[0115] The second straight line 46 is the center line of the two second approximate straight lines 451L. The shortest distances from each point on the second straight line 46 to the two second approximate straight lines 451L are equal to each other. The two second approximate straight lines 451L approximate the two side edges 451 of the second portion 45.

[0116] In the tensioning process, the mask 20 is tensioned along the in-plane direction of the first surface 23. When the mask 20 is tensioned, the mask 20 is elastically deformed. The tension applied to the mask 20 is adjusted so that the alignment marks 41 move to desired positions. For example, the tension applied to the mask 20 is adjusted so that the center points 47 of the multiple alignment marks 41 each move to a desired position.

[0117] The tensioning step may include a first tensioning step and a second tensioning step.

[0118] In the first tensioning step, the two first side regions 31 are pulled with a tension T1 in a first direction D1. As shown in Figures 5 and 6, a first clamp 71 may be fixed to the first side region 31, and the first clamp 71 may be pulled with a tension T1 in the first direction D1. As shown in Figure 6, multiple first clamps 71 may be fixed to one first side region 31.

[0119] In the second tensioning step, the two second side regions 32 are pulled in the second direction D2 with a tension force T2. As shown in Figures 5 and 6, second clamps 72 may be fixed to the second side regions 32, and the second clamps 72 may be pulled in the second direction D2 with a tension force T2. As shown in Figure 6, multiple second clamps 72 may be fixed to one second side region 32.

[0120] 5, the position of the mask 20 relative to a dummy substrate 80 may be adjusted. The dummy substrate 80 includes a plurality of substrate marks 82. The plurality of substrate marks 82 on the dummy substrate 80 may be formed at the same positions as the plurality of substrate marks on the substrate used in the physical vapor deposition process.

[0121] Each of the plurality of substrate marks 82 may include a layer that blocks light, for example, a metal layer.

[0122] In the tensioning process, desired positions of the multiple alignment marks 41 of the mask 20 may be determined based on the multiple substrate marks 82. For example, in the tensioning process, the tension T1 and the tension T2 may be adjusted so that the multiple alignment marks 41 overlap the corresponding substrate marks 82 in a plan view.

[0123] 8 is a diagram showing an example of the alignment mark 41 and the substrate mark 82. In FIG. 8, the alignment mark 41 is shown overlapping the substrate mark 82 in a plan view. The substrate mark 82 may have a cross shape, similar to the alignment mark 41. The center point of the alignment mark 41 may overlap the center point of the substrate mark 82.

[0124] 8, in plan view, the outline of the alignment mark 41 may surround the outline of the substrate mark 82. Although not shown, in plan view, the outline of the substrate mark 82 may surround the outline of the alignment mark 41.

[0125] Next, a fixing step is performed to fix the outer region 30 of the mask 20 to the frame member 63 of the frame 60. Figures 9 and 10 are a cross-sectional view and a plan view showing an example of the fixing step. In the fixing step, the outer region 30 is fixed to the frame member 63 by a plurality of fixing portions 66.

[0126] The two first side regions 31, the two second side regions 32, and the four corner regions 33 may each include at least one fixed portion 66. The first side region 31 may include a plurality of fixed portions 66 aligned in the second direction D2. The second side region 32 may include a plurality of fixed portions 66 aligned in the first direction D1.

[0127] 9 and 10 , at least some of the multiple fixing portions 66 may be located inside the alignment mark 41. "Constituent element A is located inside constituent element B" means that, in a plan view, the distance from constituent element A to center point 21 is smaller than the distance from constituent element B to center point 21. Conversely, "constituent element A is located outside constituent element B" means that, in a plan view, the distance from constituent element A to center point 21 is larger than the distance from constituent element B to center point 21. Although not shown, at least some of the multiple fixing portions 66 may be located outside the alignment mark 41.

[0128] The outer region 30 may be fixed to the frame member 63 by welding. For example, the fixing portion 66 may be formed by irradiating the outer region 30 with a laser. In this case, the fixing portion 66 is formed by melting a portion of the outer region 30 and adhering it to the frame 60.

[0129] Subsequently, a trimming process may be performed. In the trimming process, a portion of the outer region 30 is removed. After the trimming process, the outer edge 25 of the mask 20 may be located inside the outline of the frame 60, as shown in FIG. 10 . For example, the outer edge 25 of the mask 20 may be surrounded by the outline of the frame 60 in a plan view.

[0130] The mask 20 is fixed to the frame 60 to obtain the mask device 15 .

[0131] In the method for manufacturing an electronic device using the mask apparatus 15, a movement step is performed to adjust the relative position of the mask 20 with respect to a substrate (not shown). For example, the mask apparatus 15 is moved so as to minimize the deviation between the positions of the multiple alignment marks 41 on the mask 20 and the positions of the corresponding substrate marks on the substrate.

[0132] After the transfer step, a physical vapor deposition step is performed, for example, by vacuum deposition, ion plating, sputtering, etc. to form a deposition layer on the substrate.

[0133] The effects of this embodiment will be described. The mask 20 of this embodiment includes alignment marks 41 located in each of the two first side regions 31, two second side regions 32, and four corner regions 33. In the tensioning step of the method for manufacturing the mask device 15, the positions of the two first side regions 31, two second side regions 32, and four corner regions 33 are appropriately adjusted based on the alignment marks 41. Therefore, even if the dimensions L1 and L2 of the mask 20 are large, the positions of the multiple through holes 52 are appropriately adjusted. As a result, the above-mentioned misalignment is easily minimized in the moving step of the method for manufacturing the electronic device. This increases the accuracy of the shape and arrangement of the deposition layer.

[0134] The above-described embodiment can be modified in various ways. Hereinafter, other embodiments will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for the corresponding parts in the above-described embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in other embodiments, the descriptions may be omitted.

[0135] 11 is a plan view showing an example of the mask 20. The two first side regions 31, the two second side regions 32, and the four corner regions 33 may each include a plurality of alignment marks 41. Adjacent alignment marks 41 are also referred to as alignment mark groups 40. The two first side regions 31, the two second side regions 32, and the four corner regions 33 may each include at least one alignment mark group 40. In the example shown in FIG. 11, the two first side regions 31, the two second side regions 32, and the four corner regions 33 each include one alignment mark group 40.

[0136] Each alignment mark group 40 includes at least two alignment marks 41. In the example shown in Fig. 11, each alignment mark group 40 includes three alignment marks 41. The multiple alignment marks 41 included in each alignment mark group 40 may be referred to as a first alignment mark 41, a second alignment mark 41, a third alignment mark 41, and so on.

[0137] The multiple alignment marks 41 included in each alignment mark group 40 may be classified into main alignment marks 41A, outer alignment marks 41B, and inner alignment marks 41C according to their functions and positions. Of the multiple alignment marks 41 included in the alignment mark group 40, the main alignment mark 41A is the alignment mark 41 that is first attempted to be detected in the detection step of the manufacturing method of the mask device 15. Of the multiple alignment marks 41 included in the alignment mark group 40, the outer alignment mark 41B is the alignment mark 41 that is located outside the main alignment mark 41A. Of the multiple alignment marks 41 included in the alignment mark group 40, the inner alignment mark 41C is the alignment mark 41 that is located inside the main alignment mark 41A.

[0138] Each alignment mark group 40 may include one main alignment mark 41A, at least one outer alignment mark 41B, and at least one inner alignment mark 41C. In the example shown in Figure 11, each alignment mark group 40 includes one main alignment mark 41A, one outer alignment mark 41B, and one inner alignment mark 41C.

[0139] In the first side region 31, the main alignment mark 41A, the outer alignment mark 41B, and the inner alignment mark 41C may be aligned in the first direction D1. In the second side region 32, the main alignment mark 41A, the outer alignment mark 41B, and the inner alignment mark 41C may be aligned in the second direction D2.

[0140] In the corner region 33, the main alignment mark 41A, the outer alignment mark 41B, and the inner alignment mark 41C may be aligned in the first direction D1. Although not shown, in the corner region 33, the main alignment mark 41A, the outer alignment mark 41B, and the inner alignment mark 41C may be aligned in the second direction D2.

[0141] FIG. 12 is a cross-sectional view showing an example of alignment mark group 40. The main alignment mark 41A, the outer alignment mark 41B, and the inner alignment mark 41C may each include a recess 42. The recess 42 of the main alignment mark 41A is also referred to as the main recess 42A. The main recess 42A has a depth H2A. The recess 42 of the outer alignment mark 41B is also referred to as the outer recess 42B. The outer recess 42B has a depth H2B. The recess 42 of the inner alignment mark 41C is also referred to as the inner recess 42C. The inner recess 42C has a depth H2C.

[0142] The depth H2B of the outer recess 42B may be greater than the depth H2A of the main recess 42A. The ratio of the depth H2B to the depth H2A, H2B / H2A, may be, for example, 1.01 or greater, 1.02 or greater, or 1.03 or greater. H2B / H2A may be, for example, 1.05 or less, 1.10 or less, or 1.20 or less. The range of H2B / H2A may be defined by a first group consisting of 1.01, 1.02, and 1.03 and / or a second group consisting of 1.05, 1.10, 1.20, and 1.50. The range of H2B / H2A may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of H2B / H2A may be defined by a combination of any two of the values ​​included in the first group. The range of H2B / H2A may be determined by a combination of any two of the values ​​included in the second group described above. H2B / H2A may be, for example, 1.01 or more and 1.50 or less, 1.01 or more and 1.20 or less, 1.01 or more and 1.10 or less, 1.01 or more and 1.05 or less, 1.01 or more and 1.03 or less, 1.01 or more and 1.02 or less, 1.02 or more and 1.50 or less, 1.02 or more and 1.20 or less, 1.02 or more and 1.10 or less, 1.02 or more and 1.05 or less, or 1. It may be 02 or more and 1.03 or less, 1.03 or more and 1.50 or less, 1.03 or more and 1.20 or less, 1.03 or more and 1.10 or less, 1.03 or more and 1.05 or less, 1.05 or more and 1.50 or less, 1.05 or more and 1.20 or less, 1.05 or more and 1.10 or less, 1.10 or more and 1.20 or less, or 1.20 or more and 1.50 or less.

[0143] The depth H2C of the inner recess 42C may be smaller than the depth H2A of the main recess 42A. The ratio of the depth H2C to the depth H2A, H2C / H2A, may be, for example, 0.60 or more, 0.80 or more, 0.90 or more, or 0.95 or more. H2C / H2A may be, for example, 0.97 or less, 0.98 or less, or 0.99 or less. The range of H2C / H2A may be defined by a first group consisting of 0.60, 0.80, 0.90, and 0.95 and / or a second group consisting of 0.97, 0.98, and 0.99. The range of H2C / H2A may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of H2C / H2A may be defined by a combination of any two of the values ​​included in the first group. The range of H2C / H2A may be determined by a combination of any two of the values ​​included in the second group described above. H2C / H2A may be, for example, 0.60 or more and 0.99 or less, 0.60 or more and 0.98 or less, 0.60 or more and 0.97 or less, 0.60 or more and 0.95 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, 0.80 or more and 0.99 or less, 0.80 or more and 0.98 or less, 0.80 or more and 0.97 or less, 0.80 or more and 0.95 or less, or 0. It may be 80 or more and 0.90 or less, 0.90 or more and 0.99 or less, 0.90 or more and 0.98 or less, 0.90 or more and 0.97 or less, 0.90 or more and 0.95 or less, 0.95 or more and 0.99 or less, 0.95 or more and 0.98 or less, 0.95 or more and 0.97 or less, 0.97 or more and 0.98 or less, or 0.98 or more and 0.99 or less.

[0144] The above-mentioned dimension S1 of the main recess 42A, the outer recess 42B, and the inner recess 42C are also referred to as dimension S1A, dimension S1B, and dimension S1C, respectively. Dimension S1B may be larger than dimension S1A. Dimension S1C may be smaller than dimension S1A.

[0145] The following describes the advantages of one alignment mark group 40 including two or more alignment marks 41. FIG.

[0146] The metal plate 22 may include a main phase 22c and a plurality of grains 22d present in the main phase 22c. The main phase 22c may include a plurality of crystal grains made of an iron alloy containing iron and nickel, for example. The iron alloy constituting the main phase 22c may contain other elements such as cobalt in addition to iron and nickel. The ranges of the nickel and cobalt contents in the main phase 22c may be the same as the ranges described above for the material of the metal plate 22.

[0147] The particles 22d are, for example, substances that are poorly soluble in nitric acid. The particles 22d contain an element other than iron and nickel as a main component. For example, the particles 22d include aluminum, magnesium, silicon, phosphorus, sulfur, chromium, or zirconium, or a compound containing these elements. The compound may be, for example, an oxide, sulfide, carbide, nitride, or intermetallic compound. The shape of the particles 22d is arbitrary, but may be, for example, granular.

[0148] The particles 22d may be located inside the main phase 22c or on the surface of the main phase 22c. "Located on the surface of the main phase 22c" means that the particles 22d are at least partially exposed to the first surface 23 or the second surface 24 of the metal plate 22.

[0149] When the particles 22d are located inside the main phase 22c, the particles 22d may be located in a surface layer of the main phase 22c or in a bulk layer of the main phase 22c. The surface layer is a portion that is located within 5 μm from the first surface 23 or the second surface 24 of the metal plate 22 in the third direction D3. The bulk layer is a portion that is located more than 5 μm from the first surface 23 and the second surface 24 of the metal plate 22 in the third direction D3.

[0150] The particles 22d may be uniformly distributed in both the surface layer and the bulk layer of the main phase 22c. The particles 22d may be distributed more in the surface layer than in the bulk layer of the main phase 22c. The particles 22d may be distributed more in the bulk layer than in the surface layer of the main phase 22c.

[0151] 14 is a cross-sectional view showing an example of recess 42 of alignment mark 41. When particles 22d are present in the portion of metal plate 22 where recess 42 is formed, particles 22d may fall off from metal plate 22. As a result, depressions 421 corresponding to the shape of particles 22d are formed on the wall surface of recess 42.

[0152] 15 is a plan view showing an example of alignment mark 41 including a recess 42 in which a depression 421 is formed. The outline of alignment mark 41 in plan view may include a protrusion caused by depression 421. In the example shown in FIG. 15, a side edge 451 of second portion 45 of alignment mark 41 includes a protrusion 452 caused by depression 421.

[0153] The position or inclination of the second approximate line 451L changes due to the influence of the protrusion 452. When the position or inclination of the second approximate line 451L changes, the position or inclination of the second line 46 changes. As a result, the position of the center point 47 changes compared to when the side edge 451 is not affected by the protrusion 452. If the protrusion 452 is large, it may be impossible to calculate the second approximate line 451L. If it is impossible to calculate the second approximate line 451L, it is also impossible to calculate the center point 21. As a result, a detection error of the alignment mark 41 occurs.

[0154] The effect of particles 22d on the outline of alignment mark 41 varies depending on the depth of recess 42. For example, when recess 42 is small, particles 22d are less likely to fall off. Therefore, the outline of alignment mark 41 including recess 42 with a small depth is less affected by particles 22d. The deeper recess 42 is, the more likely particles 22d are to fall off. Therefore, the outline of alignment mark 41 including recess 42 with a large depth is more likely to be affected by particles 22d. In terms of the effect of particles 22d, it is preferable that recess 42 is small in depth.

[0155] On the other hand, when the depth of the recess 42 is small, the difference between the intensity of the light reflected at the recess 42 and the intensity of the light reflected at the first surface 23 around the recess 42 is small. The deeper the recess 42 is, the greater the difference between the intensity of the light reflected at the recess 42 and the intensity of the light reflected at the first surface 23 around the recess 42. The greater the difference in intensity, the more noticeable the alignment mark 41 is in the image showing the distribution of the intensity of the reflected light. From the perspective of the intensity of the reflected light, it is preferable that the depth of the recess 42 is large.

[0156] In this modification, the alignment mark group 40 includes multiple alignment marks 41 with recesses 42 of different depths. For example, the alignment mark group 40 includes a main alignment mark 41A, an outer alignment mark 41B, and an inner alignment mark 41C. This prevents failure to detect all of the alignment marks 41 included in the alignment mark group 40. In other words, it is possible to detect at least one of the multiple alignment marks 41 included in the alignment mark group 40.

[0157] An example of the detection step in this modified example will be described below. In the detection step, at least one of the alignment marks 41 in the alignment mark group 40 is detected.

[0158] The detection step may include a first detection step, a second detection step, and a third detection step.

[0159] In the first detection step, the main alignment mark 41A is detected. For example, an image relating to the main alignment mark 41A is acquired. The image relating to the main alignment mark 41A is also referred to as a first image.

[0160] In the first detection step, it is confirmed whether the first image contains a defect. For example, it is confirmed whether the outline of the main alignment mark 41A in the first image contains a protrusion. For example, if the outline of the main alignment mark 41A contains a protrusion with a protrusion dimension equal to or greater than a threshold, it is determined that the first image contains a defect. It may also be determined that the first image contains a defect if the intensity of light reflected by the main recess 42A of the main alignment mark 41A is low and the outline of the main alignment mark 41A is not noticeable.

[0161] If the first image is determined to contain a defect, a second detection step is performed. If the first image is determined to contain no defect, a center point 47 of the main alignment mark 41A may be calculated based on the first image. Subsequently, a pulling step may be performed.

[0162] In the second detection step, either the outer alignment mark 41B or the inner alignment mark 41C is detected. For example, an image relating to the outer alignment mark 41B is acquired. The image relating to either the outer alignment mark 41B or the inner alignment mark 41C is also referred to as a second image.

[0163] In the second detection step, it is confirmed whether the second image contains a defect. For example, it is confirmed whether the outline of the outer alignment mark 41B in the second image contains a protrusion. For example, if the outline of the outer alignment mark 41B contains a protrusion with a protrusion dimension equal to or greater than a threshold, it is determined that the second image contains a defect. If the intensity of light reflected by the outer recess 42B of the outer alignment mark 41B is low and the outline of the outer alignment mark 41B is not noticeable, it may be determined that the second image contains a defect.

[0164] If the second image is determined to contain a defect, a third detection step is performed. If the second image is determined to contain no defect, a center point 47 of the outer alignment mark 41B may be calculated based on the second image. Subsequently, a pulling step may be performed.

[0165] In the third detection step, the other of the outer alignment mark 41B and the inner alignment mark 41C is detected. For example, an image relating to the inner alignment mark 41C is acquired. The image relating to the other of the outer alignment mark 41B and the inner alignment mark 41C is also referred to as a third image.

[0166] In the third detection step, it is confirmed whether the third image contains a defect. For example, it is confirmed whether the outline of the inner alignment mark 41C in the third image contains a protrusion. For example, if the outline of the inner alignment mark 41C contains a protrusion with a protrusion dimension equal to or greater than a threshold, it is determined that the third image contains a defect. The third image may also be determined to contain a defect if the intensity of light reflected by the inner recess 42C of the inner alignment mark 41C is low and the outline of the inner alignment mark 41C is not noticeable.

[0167] If it is determined that the third image contains a defect, a detection process for other alignment marks 41 may be performed. If it is determined that the third image does not contain a defect, a center point 47 of the inner alignment mark 41C may be calculated based on the third image. Then, a pulling process may be performed.

[0168] In this modification, the two first side regions 31, the two second side regions 32, and the four corner regions 33 each include at least one alignment mark group 40. Each alignment mark group 40 includes a plurality of alignment marks 41. This reduces the risk of an incident in which no alignment marks 41 are detected in any of the two first side regions 31, the two second side regions 32, and the four corner regions 33.

[0169] As described above, the alignment mark group 40 preferably includes a plurality of alignment marks 41 having recesses 42 of different depths. The plurality of alignment marks 41 having recesses 42 of different depths have different probabilities that the outline of the alignment mark 41 will be affected by particles 22d and that the outline of the alignment mark 41 will become unclear due to the intensity of reflected light. This prevents failure to detect all of the alignment marks 41 included in the alignment mark group 40.

[0170] A substrate 80 used in the method for manufacturing a mask device 15 may include a substrate mark group similar to the alignment mark group 40 of the mask 20. The substrate mark group includes at least two substrate marks 82. The substrate mark group may include a plurality of substrate marks 82 corresponding to the plurality of alignment marks 41 of the alignment mark group 40.

[0171] 16 is a cross-sectional view showing an example of an alignment mark group 40. The alignment mark group 40 may include two alignment marks 41. The two alignment marks 41 may be a main alignment mark 41A and an outer alignment mark 41B. The alignment mark group 40 does not have to include three or more alignment marks 41.

[0172] 17 is a cross-sectional view showing an example of an alignment mark group 40. The alignment mark group 40 may include two alignment marks 41. The two alignment marks 41 may be a main alignment mark 41A and an inner alignment mark 41C. The alignment mark group 40 does not have to include three or more alignment marks 41.

[0173] The two alignment marks 41 shown in FIG. 16 or FIG. 17 are also referred to as the first alignment mark 41 and the second alignment mark 41. When the alignment mark group 40 includes two alignment marks 41, the inspection process may include a first inspection process and a second inspection process. In the first inspection process, a first image of the first alignment mark 41 is acquired. If the first image includes a defect, a second detection process is performed. In the second inspection process, a second image of the second alignment mark 41 is acquired.

[0174] Although not shown, the multiple alignment marks 41 included in one alignment mark group 40 may include recesses 42 with the same depth. Even if the recesses 42 of the multiple alignment marks 41 have the same depth, failure to detect the alignment mark 41 is reduced compared to when only one alignment mark 41 is formed in each of the regions 31, 32, and 33.

[0175] 18 is a plan view showing an example of the mask 20. The alignment marks 41 of the alignment mark group 40 in the corner region 33 may be aligned in a direction different from the first direction D1 and different from the second direction D2. For example, the alignment marks 41 may be aligned in a direction from the corner 28 toward the center point 21.

[0176] 19 is a plan view showing an example of the mask 20. Each alignment mark group 40 may include at least nine alignment marks 41. The at least nine alignment marks 41 may be arranged in at least three rows in each of the first direction D1 and the second direction D2.

[0177] According to this modification, failure to detect all of the alignment marks 41 included in the alignment mark group 40 is further reduced.

[0178] The at least nine alignment marks 41 may be classified into a main alignment mark 41A, outer alignment marks 41B, and inner alignment marks 41C according to their functions and positions. In other words, the at least nine alignment marks 41 may include one main alignment mark 41A, multiple outer alignment marks 41B, and multiple inner alignment marks 41C.

[0179] 20 is a plan view showing an example of the mask 20. Each of the two first side regions 31 may include a plurality of alignment mark groups 40. In each first side region 31, the plurality of alignment mark groups 40 may be aligned in the second direction D2.

[0180] Each of the two second side regions 32 may include a plurality of alignment mark groups 40. In each second side region 32, the plurality of alignment mark groups 40 may be aligned in the first direction D1.

[0181] 21 is a plan view showing an example of the mask 20. Each of the two first side regions 31 may include a row of alignment marks 41 arranged at equal intervals in the second direction D2. Each of the two first side regions 31 may include a plurality of rows. In the example shown in FIG. 21, each of the two first side regions 31 includes three rows arranged in the first direction D1.

[0182] Each of the two second side regions 32 may include a row of alignment marks 41 arranged at equal intervals in the first direction D1. Each of the two second side regions 32 may include a plurality of rows. In the example shown in FIG. 21 , each of the two second side regions 32 includes three rows arranged in the second direction D2.

[0183] 21 , a row of alignment marks 41 aligned in the first direction D1 and a row of alignment marks 41 aligned in the second direction D2 may be arranged to surround the inner region 50 in a planar view. The outer region 30 may include a plurality of rows surrounding the inner region 50 in a planar view.

[0184] The positions of the substrate marks on the substrate may differ depending on the type, specifications, etc. of the electronic device. According to this modification, the outer region 30 of the mask 20 includes a large number of alignment marks 41, so that various positions of the substrate marks on the substrate can be accommodated.

[0185] 21 , a portion of the first side region 31 may be removed along a row of the alignment marks 41 aligned at equal intervals in the second direction D2. For example, a portion of the first side region 31 may be removed along a row that is positioned outermost in the first direction D1. In the trimming process, a portion of the second side region 32 may be removed along a row of the alignment marks 41 aligned at equal intervals in the first direction D1. For example, a portion of the second side region 32 may be removed along a row that is positioned outermost in the second direction D2.

[0186] 22 is a plan view showing an example of a mask device 15. The mask device 15 shown in FIG. 22 is obtained by fixing the mask 20 shown in FIG. 21 to a frame 60 and then performing a trimming process. The trimming process is facilitated because a portion of the first side region 31 and a portion of the second side region 32 are removed along the row of the multiple alignment marks 41. For example, the line along which the trimming process is performed can be easily determined based on the positions of the alignment marks 41.

[0187] 23 is a plan view showing an example of the mask 20. The alignment marks 41 arranged at equal intervals in the second direction D2 in each first side region 31 may be connected to each other. For example, the alignment marks 41 arranged at equal intervals in the second direction D2 in each first side region 31 may each include second portions 45 connected to each other.

[0188] The alignment marks 41 arranged at equal intervals in the first direction D1 in each second side region 32 may be connected to each other. For example, the alignment marks 41 arranged at equal intervals in the first direction D1 in each second side region 32 may each include first portions 43 that are connected to each other.

[0189] In this modification, the alignment marks 41 are connected to one another at equal intervals, which further facilitates the trimming process.

[0190] 24 is a plan view showing an example of the mask 20. The inner region 50 may include a plurality of through holes 52 aligned in the first direction D1 at equal intervals from one to the other of the two first side regions 31. The inner region 50 may include a plurality of through holes 52 aligned in the second direction D2 at equal intervals from one to the other of the two second side regions 32.

Claims

1. 1. A mask for forming a deposition layer on a substrate by physical vapor deposition, comprising: a metal plate including a first surface, a second surface, and an outer edge; an outer region extending along the outer edge; an inner region surrounded by the outer region, the inner region includes a plurality of through holes penetrating the metal plate from the first surface to the second surface, the outer region includes two first side regions adjacent to the inner region in a first direction, two second side regions adjacent to the inner region in a second direction intersecting the first direction, and four corner regions each located between any one of the two first side regions and any one of the two first side regions, The mask, wherein the two first side regions, the two second side regions, and the four corner regions each include at least one alignment mark.

2. the alignment mark in the first side region is located at a center of the first side region in the second direction, The mask of claim 1 , wherein the alignment mark in the second side region is located at a center of the first side region in the first direction.

3. the two first side regions, the two second side regions, and the four corner regions each include at least one alignment mark group; The mask of claim 1 , wherein the alignment mark group includes at least two alignment marks.

4. the alignment mark group includes at least nine alignment marks; The mask of claim 3 , wherein the at least nine alignment marks are arranged in at least three rows in each of the first direction and the second direction.

5. 4. The mask of claim 3, wherein the alignment mark group includes a main alignment mark, at least one outer alignment mark located outside the main alignment mark, and at least one inner alignment mark located inside the main alignment mark.

6. the main alignment mark, the outer alignment mark, and the inner alignment mark are each located on the first surface and include a recess that does not penetrate the metal plate; the recess of the outer alignment mark has a depth greater than a depth of the recess of the main alignment mark; The mask of claim 5 , wherein the recess of the inner alignment mark has a depth that is less than a depth of the recess of the main alignment mark.

7. each of the two first side regions includes a plurality of alignment mark groups aligned in the second direction; The mask according to claim 3 , wherein each of the two second side regions includes a plurality of the alignment mark groups aligned in the first direction.

8. the first side region includes a plurality of alignment marks arranged at equal intervals in the second direction; The mask according to claim 1 , wherein the second side region includes a plurality of alignment marks arranged at equal intervals in the first direction.

9. 9. The mask according to claim 1, wherein the alignment mark includes a first portion extending in the first direction and a second portion extending in the second direction.

10. each of the alignment marks includes a first portion extending in the first direction and a second portion extending in the second direction; the second portions of the alignment marks in the first side region are connected to each other, The mask of claim 8 , wherein the first portions of the alignment marks in the second side region are connected to each other.

11. The mask according to any one of claims 1 to 8, wherein the metal plate has a thickness of 8 µm or more and 200 µm or less.

12. 1. A mask apparatus for forming a deposition layer on a substrate by physical vapor deposition, comprising: a frame including an opening; a mask fixed to the frame, The mask is a metal plate including a first surface, a second surface, and an outer edge; an outer region extending along the outer edge and secured to the frame; an inner region overlying the opening and surrounded by the outer region; the inner region includes a plurality of through holes penetrating the metal plate from the first surface to the second surface, the outer region includes two first side regions adjacent to the inner region in a first direction, two second side regions adjacent to the inner region in a second direction intersecting the first direction, and four corner regions each located between any one of the two first side regions and any one of the two first side regions, The mask device, wherein the two first side regions, the two second side regions and the four corner regions each include at least one alignment mark.

13. The mask device according to claim 12 , wherein the two first side regions, the two second side regions, and the four corner regions each include at least one fixing portion that fixes the outer region to the frame.

14. The mask device according to claim 13 , wherein the fixing portion is located inside the alignment mark.

15. 1. A method for manufacturing a mask device for forming a deposition layer on a substrate by physical vapor deposition, comprising: providing a frame including an aperture; an alignment step of adjusting the position of the mask according to claim 1; and a fixing step of fixing the outer region of the mask to the frame, the alignment step includes a detection step of detecting the alignment mark and a tension step of tensioning the mask; A method for manufacturing a mask device, wherein the pulling process includes a first pulling process of pulling the two first side regions in the first direction, and a second pulling process of pulling the two second side regions in the second direction.

16. the two first side regions, the two second side regions, and the four corner regions each include at least one alignment mark group; the alignment mark group includes at least a first alignment mark and a second alignment mark; 16. The method for manufacturing a mask device according to claim 15, wherein the detection process includes a first detection process of acquiring a first image of the first alignment mark, and a second detection process of acquiring a second image of the second alignment mark when the first image includes a defect.

17. the alignment mark group includes a main alignment mark, at least one outer alignment mark located outside the main alignment mark, and at least one inner alignment mark located inside the main alignment mark; 17. The method for manufacturing a mask device according to claim 16, wherein the detection process includes a first detection process of acquiring a first image of the main alignment mark, a second detection process of acquiring a second image of one of the outer alignment mark or the inner alignment mark when the first image includes a defect, and a third detection process of acquiring a third image of the other of the outer alignment mark or the inner alignment mark when the second image includes a defect.

18. the main alignment mark, the outer alignment mark, and the inner alignment mark are each located on the first surface and include a recess that does not penetrate the metal plate; the recess of the outer alignment mark has a depth greater than a depth of the recess of the main alignment mark; The method for manufacturing a mask device according to claim 17 , wherein the recess of the inner alignment mark has a depth that is smaller than a depth of the recess of the main alignment mark.

19. The method for manufacturing a mask device according to any one of claims 15 to 18, further comprising, after the fixing step, a trimming step of removing a part of the outer region with reference to the position of the alignment mark.

20. the first side region includes a plurality of alignment marks arranged at equal intervals in the second direction; the second side region includes a plurality of alignment marks arranged at equal intervals in the first direction; 20. The method for manufacturing a mask device according to claim 19, wherein in the trimming step, a portion of the first side region is removed along the plurality of alignment marks in the first side region, and a portion of the second side region is removed along the plurality of alignment marks in the second side region.

Images