Developing apparatus and developing method

Abstract

To excellently develop a substrate by using a developing fluid containing at least one of gas and mist of weak acid.SOLUTION: A developing apparatus for developing a substrate on which a resist film is formed and an exposure process is performed, the developing apparatus comprising a developing fluid generating unit configured to generate a developing fluid containing at least one of a gas and a mist of a weak acid from a developing liquid, and a developing unit configured to develop the substrate with the developing fluid, the developing unit including a chamber that forms a processing space for accommodating the substrate and is provided with a discharge port configured to discharge the developing fluid into the processing space, and another discharge port configured to discharge a predetermined gas toward a rear surface side of the substrate in the processing space.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to a development apparatus and a development method. [Background technology]

[0002] The substrate processing system disclosed in Patent Document 1 includes a wet processing system, a dry processing system, and an intermediary transport system. The wet processing system has a wet processing apparatus that performs any of the substrate processing steps, from forming a resist film on a substrate to developing the resist film after exposure, in a wet manner, and is connected to an exposure apparatus. The dry processing system has a dry processing apparatus that performs the same type of substrate processing as the wet processing apparatus in a dry manner. The intermediary transport system transports substrates between the wet processing system and the dry processing system. In the substrate processing system, when viewed from the direction in which the wet processing system and the exposure apparatus are connected, the exposure apparatus protrudes from one side in a depth direction perpendicular to the connection direction in a top view, and the dry processing system is arranged adjacent to the one side in the depth direction of the wet processing system. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2024-17881 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure achieves good substrate development using a developing fluid containing at least one of a weak acid gas and mist. [Means for solving the problem]

[0005] One aspect of the present disclosure is a developing apparatus that develops a substrate on which a resist film has been formed and which has been subjected to an exposure process, and includes: a developing fluid generation unit that generates a developing fluid containing at least one of a weak acid gas and a mist from a developing liquid; and a developing unit that forms a processing space to accommodate the substrate, has a chamber provided with an outlet for ejecting the developing fluid into the processing space, and develops the substrate with the developing fluid, and the developing unit ejects the developing fluid from the outlet toward the front side of the substrate in the processing space, and has another outlet for ejecting a predetermined gas toward the back side of the substrate in the processing space. [Effects of the Invention]

[0006] According to the present disclosure, a developing fluid containing at least one of a weak acid gas and a weak acid mist can be used to perform good substrate development. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a plan view schematically illustrating an outline of the configuration of a wafer processing system as a developing device according to an embodiment of the present invention. [Figure 2] 1 is a front view schematically illustrating an outline of the configuration of a wafer processing system as a developing device according to an embodiment of the present invention. [Figure 3] FIG. 2 is a vertical cross-sectional view schematically illustrating the configuration of a development unit. [Figure 4] FIG. 2 is a cross-sectional view schematically illustrating the configuration of a developing unit. [Figure 5] 1 is a vertical cross-sectional view schematically illustrating the configuration of a heating processing unit. [Figure 6] FIG. 2 is a plan view showing an outline of the arrangement of heaters on a heating plate. [Figure 7] FIG. 2 is a plan view schematically illustrating the configuration of the upper surface side of the hot plate. [Figure 8] FIG. 2 is a partially enlarged cross-sectional view schematically illustrating the configuration of the peripheral portion of the hot plate. [Figure 9] FIG. 2 is a diagram illustrating the configuration of a developing fluid supply mechanism. [Figure 10] FIG. 10 is a diagram illustrating an example of the arrangement of a supply mechanism; [Figure 11] FIG. 10 is a diagram illustrating an example of the arrangement of a supply mechanism; [Figure 12] 10 is a flowchart showing main steps of a first example of a processing sequence. [Figure 13] 10 is a flowchart showing main steps of an example 2 of a processing sequence executed by the wafer processing system. [Figure 14] 10 is a flowchart showing main steps of an example 3 of a processing sequence executed by the wafer processing system. [Figure 15] 10 is a flowchart showing main steps of an example 4 of a processing sequence executed by the wafer processing system. [Figure 16] FIG. 10 is a diagram illustrating another example 1 of a supply mechanism for developing fluid. [Figure 17] FIG. 10 is a diagram illustrating another example 2 of a supply mechanism for developing fluid. [Figure 18] 10A and 10B are diagrams for explaining another example of a method for discharging low-temperature gas from the discharge ports of the heat plate. [Figure 19] 10A and 10B are diagrams for explaining another example of a method for weakening development by the developing fluid during development. [Figure 20] 10A and 10B are diagrams for explaining examples of gases discharged from the discharge ports of the heat plate. [Figure 21] 10 is a flowchart showing main steps of an example of a processing sequence when a cleaning fluid is discharged from a discharge port of a heating plate. [Figure 22] FIG. 10 is a vertical cross-sectional view illustrating another example of the vaporizer. DETAILED DESCRIPTION OF THE INVENTION

[0008] The wafer processing system and the developing fluid supply device as the developing device according to the present embodiment will be described below with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0009] <Wafer processing system> First, the configuration of a wafer processing system as a developing apparatus according to this embodiment will be described. Figures 1 and 2 are a plan view and a front view, respectively, that schematically show the configuration of wafer processing system 1. In this embodiment, the wafer processing system 1 will be described as an example of a photolithography processing system that performs a resist film forming process and a developing process on a semiconductor wafer (hereinafter referred to as a "wafer") W as a substrate.

[0010] 1, the wafer processing system 1 includes a cassette station 2 into which a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 3 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The wafer processing system 1 has a configuration in which the cassette station 2 and an interface station 4 that transfers the wafers W between the processing station 3 and an exposure device (not shown) adjacent to the opposite side of the processing station 3 are integrally connected. Note that, although two processing stations 3 are installed between the cassette station 2 and the interface station 4 as shown in FIG. 1, one processing station 3 or three or more processing stations may be installed.

[0011] The cassette station 2 is provided with a cassette mounting table 21, a wafer transfer device 22, and a wafer transfer device 23. A plurality of cassette mounting plates 24 are arranged on the cassette mounting table 21. The cassette station 2 transfers wafers between the cassette C mounted on the cassette mounting table 21 and the processing station 3 by the wafer transfer device 22 or the wafer transfer device 23. To this end, the wafer transfer device 22 and the wafer transfer device 23 are each provided with a drive mechanism having movement paths in each direction, such as the horizontal direction (X direction and Y direction), the vertical direction (Z direction), and around the vertical axis (θ direction), as needed, and may also be provided with a drive mechanism having movement paths in all directions. At least one of wafer transfer device 22 and wafer transfer device 23 is capable of transferring wafers W between cassettes C and processing station 3. The transfer of wafers W to and from processing station 3 refers to, for example, transferring wafers between processing station 3 and third block G3, which includes a transfer device accessible by wafer transfer device 33 in processing station 3 (described later). Third block G3 may include multiple transfer devices (not shown) arranged vertically.

[0012] An inspection device (not shown) for inspecting the wafer W may be provided at a position accessible to either the wafer transfer device 22 or the wafer transfer device .

[0013] The processing station 3 is provided with multiple blocks, for example, three blocks G1, G2, and G4 (first, second, and fourth blocks). As shown in FIG. 2, multiple layers 31 each including the first and second blocks G1 and G2 are stacked vertically. For example, the first block G1 is provided on the front side of the processing station 3 (the negative X-direction side in FIG. 1), and the second block G2 is provided on the rear side of the processing station 3 (the positive X-direction side in FIG. 1). The fourth block G4 is provided on the interface station 4 side of the processing station 3 (the positive Y-direction side in FIG. 1) or at a connection point with another adjacent processing station 3. The fourth block G4 may include multiple transfer devices arranged vertically. The aforementioned third block G3 may also be provided within the processing station 3.

[0014] The first block G1 includes a plurality of processing devices, such as a patterning film forming device and a development processing device (both not shown). The patterning film forming device may include, for example, a resist film forming device and an anti-reflection film forming device.

[0015] For example, the plurality of processing devices are arranged in a horizontal line in the first block G1. Note that the number, arrangement, and types of these processing devices in the first block G1 can be selected arbitrarily.

[0016] In these patterning film forming apparatuses and developing treatment apparatuses, for example, a predetermined processing liquid or a predetermined gas is supplied onto the wafer W. In this manner, the patterning film forming apparatus forms a resist film used as a mask when forming a pattern of an underlying film, or forms an anti-reflection film for efficiently performing a light irradiation process, such as an exposure process. Meanwhile, in the developing treatment apparatus, a portion of the exposed resist film is removed to form the uneven shape that serves as the mask.

[0017] For example, in the second block G2, heat treatment devices (not shown) that perform heat treatment such as heating and cooling of the wafer W are arranged in a vertical and horizontal direction. Also, in the second block G2, although neither is shown, a hydrophobization treatment device that performs a hydrophobization treatment to improve the adhesion of the resist liquid to the wafer W, and a peripheral exposure device that exposes the peripheral portion of the wafer W are arranged in a vertical and horizontal direction (Z direction). The number and arrangement of these heat treatment devices, hydrophobization treatment devices, and peripheral exposure devices can also be selected as desired.

[0018] 1, a wafer transfer area 32 is formed in an area sandwiched between a first block G1 and a second block G2 in a plan view. In the wafer transfer area 32, for example, a wafer transfer device 33 is disposed.

[0019] The wafer transfer device 33 has a transfer arm that is movable in, for example, the Y direction, the front-rear direction, the θ direction, and the Z direction. The wafer transfer device 33 moves within the wafer transfer area 32 and can transfer the wafer W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. When there are multiple processing stations 3 as shown in FIG. 1, the wafer transfer device 33 provided in the processing station 3 located on the interface station 4 side can transfer the wafer W to predetermined devices in the first, second, and fourth blocks G1, G2, and G4, as well as the fifth block G5 described below.

[0020] A plurality of wafer transfer devices 33 are arranged one above the other, for example, as shown in FIG. 2. One wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of the upper layers 31 among the multiple layers 31 stacked one above the other. Another wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of multiple layers 31 located below the above layers 31. A plurality of wafer transfer areas 32 are provided to enable such transfer of wafers W. Note that the number of wafer transfer devices 33 and the number of layers 31 corresponding to one wafer transfer device 33 can be selected arbitrarily, such as by providing a wafer transfer device 33 for each layer 31.

[0021] The wafer transfer area 32, the first block G1, or the second block G2 may also include a shuttle transfer device (not shown). The shuttle transfer device linearly transfers the wafer W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0022] The interface station 4 is provided with a fifth block G5 equipped with multiple transfer devices, and a wafer transfer device 41 and a wafer transfer device 42. The interface station 4 uses the wafer transfer device 41 or the wafer transfer device 42 to transfer the wafer W between the fifth block G5, where the wafer W is transferred by the wafer transfer device 33, and the exposure device. To this end, the wafer transfer device 41 and the wafer transfer device 42 are each provided with a drive mechanism having movement paths in each direction, such as the horizontal direction (X direction, Y direction), the vertical direction (Z direction), and around the vertical axis (θ direction), as needed, or may be provided with a drive mechanism having movement paths in all directions. At least one of the wafer transfer device 41 and the wafer transfer device 42 can support the wafer W and transfer the wafer W between the transfer device in the fifth block G5 and the exposure device.

[0023] A cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device may be provided in the interface station 4 at a position accessible to either the wafer transfer device 41 or the wafer transfer device 42.

[0024] The inspection device may be provided in the cassette station 2 as described above, but it may also be provided in the processing station 3 and the interface station 4 at a position accessible to any of the transport arms provided inside each station (such as those provided in the wafer transport devices 33, 41, and 42 in Figure 1 or Figure 2).

[0025] The wafer processing system 1 described above includes at least one controller 100. The controller 100 processes computer-executable instructions that cause the wafer processing system 1 to perform the various processes described herein. The controller 100 may be configured to control each element of the wafer processing system 1 to perform the various processes described herein. In one embodiment, part or all of the controller 100 may be included in the wafer processing system 1. The controller 100 may include a processor, a memory, and a communication interface. The controller 100 may be implemented, for example, by a computer. The processor may be configured to read from the memory a program that provides logic or routines that enable the various control operations and execute the read program to perform the various control operations. This program may be stored in the memory in advance or may be acquired via a medium when needed. The acquired program is stored in the memory and read from the memory by the processor for execution. The medium may be a computer-readable storage medium H or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processor may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the wafer processing system 1 via a communication line such as a LAN (Local Area Network).

[0026] It should be noted that the wafer processing system in the present disclosure is not limited to the configuration described above. For example, in the embodiment described above, the wafer processing system is directly connected to the exposure apparatus, and the wafer W is transferred between the interface station 4 and the exposure apparatus. However, the wafer processing system does not have to be directly connected to the exposure apparatus. In that case, for example, the wafer W is transferred from the cassette station 2 to the processing station 3, where it is subjected to the necessary processing, and then transferred back to the cassette station 2 to be removed from the system. Furthermore, among the processing devices listed above, devices that are not required may not be provided in the wafer processing system, or processing may not be performed in those devices.

[0027] <Type of resist> In the wafer processing system 1 of the present disclosure, the resist coating, ie, the resist film, formed on the wafer W by the resist film forming device is a metal-containing resist coating, ie, a metal-containing resist film. It should be noted that the metal-containing resist is one that contains a metal as a constituent component of the resist, and does not mean a resist that contains a metal only as an impurity. The metal-containing resist is a resist film material formed on the surface of a substrate, and contains a metal to which a ligand is bonded. The metals constituting the resist may be selected from the group consisting of, for example, tin (Sn), tungsten (W), hafnium (Hf), zirconium (Zr), indium (In), tellurium (Te), antimony (Sb), nickel (Ni), cobalt (Co), titanium (Ti), tungsten (W), tantalum (Ta), molybdenum (Mo), bismuth (Bi), iodine (I), germanium (Ge), and combinations thereof, and are not limited to those described herein. To give an example of a reaction in a metal-containing resist, after the bond between the metal and the ligand is broken (i.e., the ligand is released), a condensation reaction occurs in which the metals bond to each other via oxygen atoms to form an oxide. The metal in this oxide state is a stronger compound than before it became an oxide. The release of the ligand is mainly caused by exposure, and the condensation reaction is mainly caused by heating after exposure, resulting in the metal in the oxide state being present in the resist film.

[0028] <Developing unit 200> Next, a developing unit 200 as a developing section according to the present disclosure will be described. FIGS. 3 and 4 are a longitudinal cross-sectional view and a transverse cross-sectional view, respectively, that schematically show the configuration of the developing unit 200. FIG. 5 is a longitudinal cross-sectional view that schematically shows the configuration of a heat processing section 310, which will be described later. FIG. 6 is a plan view that schematically shows the arrangement of heaters in a hot plate 360, which will be described later. FIG. 7 is a plan view that schematically shows the configuration of the upper surface side of the hot plate 360. FIG. 8 is a partially enlarged cross-sectional view that schematically shows the configuration of the peripheral portion of the hot plate 360.

[0029] 3 and 4 develops a wafer W that has been coated with a resist film and subjected to an exposure process using a developing fluid containing a weak acid gas. Specifically, the developing unit 200 develops a wafer W that has been coated with a metal-containing resist film and subjected to an exposure process and a post-exposure bake process (PEB process) using a developing fluid containing a weak acid gas. The exposure process here is a process of transferring a mask pattern using exposure light performed by an exposure device. The developing unit 200 is provided in, for example, the same block as the thermal processing device that performs thermal processing such as heating of the wafer W in the wafer processing system 1, that is, the second block G2.

[0030] The developing unit 200 has a processing vessel 300 whose interior can be sealed. A loading / unloading port (not shown) for the wafer W is formed on the side of the processing vessel 300 on the wafer transfer area side (the area side where the wafer transfer device 41 and the wafer transfer device 42 are provided), and the loading / unloading port is provided with an opening / closing shutter (not shown).

[0031] The processing vessel 300 is provided inside with a heat processing unit 310 that performs processing involving heating on the wafer W, and a temperature adjustment unit 311 that adjusts the temperature of the wafer W. The heat processing unit 310 and the temperature adjustment unit 311 are arranged side by side in the Y direction, and the temperature adjustment unit 311 is provided closer to the loading / unloading port than the heat processing unit 310.

[0032] 5, the heat treatment unit 310 has a chamber 320 that forms a processing space K1 that accommodates a wafer W and is provided with a discharge port 331 that discharges a developing fluid into the processing space K1. The chamber 320 has an upper chamber 321 that is located on the upper side and can be raised and lowered freely, and a lower chamber 322 that is located on the lower side and is integrated with the upper chamber 321 so that the interior can be sealed.

[0033] Upper chamber 321 is configured to be able to move up and down freely by an elevation mechanism (not shown). The elevation mechanism has a drive source (not shown) such as a motor that generates a driving force for raising and lowering upper chamber 321. This elevation mechanism is controlled by control unit 100.

[0034] The upper chamber 321 is formed, for example, in a substantially cylindrical shape with an open bottom. A shower head 330 serving as a gas discharge unit is provided inside the upper chamber 321 at a position facing a heat plate 360 ​​(described later). The shower head 330 is configured to be able to move up and down in synchronization with the upper chamber 321.

[0035] The showerhead 330 has a plurality of outlets 331 formed on its underside for discharging a developing fluid containing a weak acid gas into the processing space K1. Each outlet 331 discharges the developing fluid containing a weak acid gas from above the hot plate 360 ​​toward the hot plate 360. The weak acid gas is, for example, a weak carboxylic acid gas. The weak carboxylic acid gas may be, for example, acetic acid vapor. In the present disclosure, the term "weak acid" refers to an acid having an acid dissociation constant (pka) of 4 or greater (e.g., approximately 5). The developing fluid containing a weak acid gas may contain, for example, a vapor of a mixed solution of a weak carboxylic acid and an organic solvent, i.e., a carrier gas. The developing fluid containing a weak acid gas may also contain a vapor of a weak carboxylic acid alone and a carrier gas. A specific example of the weak carboxylic acid is acetic acid. The organic solvent is, for example, propylene glycol monomethyl ether acetate (PGMEA). The carrier gas is, for example, an inert gas such as nitrogen gas or argon (Ar).

[0036] The multiple outlets 331 are uniformly arranged on the lower surface of the shower head 330, except for the exhaust ports 341 described later. A developing fluid supply mechanism 500 containing weak acid gas is connected to the shower head 330 as a developing fluid supply device.

[0037] The shower head 330 is formed with a central exhaust path 340 extending upward from an exhaust port 341 formed in the center of the lower surface of the shower head 330. An exhaust device 343 such as a vacuum pump is connected to the central exhaust path 340 via an exhaust pipe 342. The exhaust pipe 342 is provided with an exhaust device group 344 having a valve for adjusting the exhaust amount. The exhaust device 343 and the exhaust device group 344 are controlled by the control unit 100. In this embodiment, the central exhaust path 340, the exhaust pipe 342, the exhaust device 343, and the exhaust device group 344 constitute a central exhaust unit according to the present disclosure that exhausts the processing space K1 from a position near the center of the wafer W on the heating plate 360 ​​in a top view.

[0038] A peripheral exhaust path 350 is formed inside the upper chamber 321, extending from an exhaust port 351 that opens downward so as to surround the outer periphery of the shower head. An exhaust device 353 such as a vacuum pump is connected to the peripheral exhaust path 350 via an exhaust pipe 352. The exhaust pipe 352 is also provided with an exhaust equipment group 354 that has a valve or the like for adjusting the exhaust amount. In this embodiment, the peripheral exhaust path 350, the exhaust pipe 352, the exhaust device 353, and the exhaust equipment group 354 constitute a peripheral exhaust unit according to the present disclosure that exhausts the processing space K1 from the peripheral edge side of the wafer W on the hot plate 360, closer to the central exhaust unit in top view.

[0039] The lower chamber 322 has a generally cylindrical shape with an open top. A hot plate 360 ​​and an annular holding member 361 that houses the hot plate 360 ​​and holds the peripheral edge of the hot plate 360 ​​are provided at the top opening of the lower chamber 322. The hot plate 360 ​​has a thick, generally circular plate shape and can support a wafer W in the processing space K1 and heat the wafer W positioned above the hot plate 360.

[0040] The hot plate 360 ​​has a plate-shaped (specifically, disc-shaped) main body 360a with a built-in heater 360b. The heater 360b is, for example, a resistance heater. The temperature of the hot plate 360 ​​(specifically, the temperature of the main body 360a) is adjusted by, for example, controlling the heater 360b using the control unit 100. As a result, for example, the wafer W positioned above the hot plate 360, such as being supported by the hot plate 360, is heated to a predetermined temperature.

[0041] The heating plate 360 ​​may be configured to be able to heat the wafer W so that the amount of heating varies in the radial and circumferential directions of the wafer W. Specifically, the heating plate 360 ​​may be configured as shown in FIG.

[0042] 6 (specifically, the main body 360a) is divided into a plurality of, for example, five regions R1 to R5. The region R1 is a circular region provided in the center of the hot plate 360 ​​in plan view. The regions R2 to R5 are arc-shaped regions obtained by dividing an annular region outside the region R1 into four equal parts in plan view. If the region R1 is the first region and the annular regions of the regions R2 to R3 are the second region, the first region and the second region are respectively arranged concentrically with the hot plate 360.

[0043] A heater 360b is individually built into each of the regions R1 to R5 of the hot plate 360. The heater 360b can heat each of the regions R1 to R5 individually. A temperature sensor (not shown) may also be individually provided in each of the regions R1 to R5. The temperature sensor individually measures the temperature of the region R1 to R5 in which the temperature sensor is provided. The heat generation amount of the heater 360b in each of the regions R1 to R5 is adjusted by the control unit 100, for example, for each of the regions R1 to R5, so that the temperature measured by each temperature sensor becomes the set temperature. The number and arrangement of the regions defined on the hot plate 360 ​​can be selected arbitrarily.

[0044] 7 and 8, the main body 360a of the heat plate 360 ​​is provided with a plurality of protrusions 360c that protrude from the upper surface thereof and support the wafer W. The plurality of protrusions 360c are provided, for example, at the following positions:

[0045] The upper surface of the main body 360a is divided into a plurality of regions along the radial direction of the upper surface (i.e., the radial direction of the wafer W supported by the hot plate 360), and the protrusions 360c are provided in each region. Specifically, the protrusions 360c are provided in each of a plurality of (three or more) portions that are located at mutually different positions in the circumferential direction of the upper surface in each region.

[0046] Furthermore, the main body 360a is formed with a discharge port 360d for discharging an inert gas (such as nitrogen gas) as a predetermined gas. The discharge port 360d discharges the inert gas toward the back surface of the wafer W, which is supported by the heating plate 360 ​​or otherwise positioned above the heating plate 360 ​​in the processing space K1, specifically toward the peripheral edge of the back surface of the wafer W. This makes it possible to prevent substances generated during development (hereinafter, development products), such as sublimates generated from a metal-containing resist film during development, from adhering to the peripheral edge of the back surface of the wafer W.

[0047] Specifically, the discharge port 360d is provided at the bottom of a groove 360e that is annular in plan view (specifically, circular in plan view) and formed on the upper surface of the main body portion 360a.

[0048] An inert gas supply mechanism 363 is connected to the discharge port 360d via a supply path 362. The supply mechanism 363 includes a group of supply devices, not shown, including an inert gas supply source, an on-off valve, and a flow rate control valve for controlling the flow of the inert gas. The group of supply devices is controlled by the controller 100. A heat exchanger 364 is provided in the supply path 362 as a heating unit that heats the gas discharged from the discharge port 360d outside the chamber 320 and outside the hot plate 360. The heat exchanger 364 is controlled by the controller 100. The heat exchanger 364 is provided, for example, in the processing vessel 300 that separates the chamber 320 from the outside (such as a vaporizer 501, which will be described later). Specifically, as shown in FIG. 3, the heat exchanger 364 is provided below a temperature adjustment plate 380, which will be described later, in its initial position in the processing vessel 300. The gas discharged from the discharge port 360d is heated by the heat exchanger 364 to a temperature at least higher than that of the wafer W. Note that the inert gas supply mechanism in the supply mechanism 500 may be connected to the discharge port 360d instead of the supply mechanism 363. That is, the inert gas used in the supply mechanism 500 may be used as the inert gas discharged from the discharge port 360d.

[0049] The more outlets 360d there are, the more uniformly the inert gas can be supplied in the circumferential direction of the hot plate 360 ​​(i.e., the circumferential direction of the wafer W supported on the hot plate 360), but the fewer the number of outlets 360d, the less the effect of the outlets 360d on the temperature distribution of the hot plate 360. Therefore, in order to suppress the effect of the outlets 360d on the temperature distribution of the hot plate 360, two or more outlets 360d may be provided intermittently along the groove 360e as shown in Fig. 7, and the width of the groove 360e may be made larger than the diameter (or width) of the outlets 360d so that the predetermined gas can be uniformly diffused and supplied in the circumferential direction as shown in Fig. 8.

[0050] The groove 360e is provided in a region facing the peripheral edge of the back surface of the wafer W when supported by the hot plate 360, for example. In this example, the distance from the wafer W to the main body 360a outside the groove 360e when supported by the hot plate 360 ​​(specifically, supported by the protrusions 360c) is greater than the distance inside the groove 360e. This prevents the inert gas discharged from the discharge ports 360d formed at the bottom of the groove 360e from heading inward from the groove 360e, and allows the inert gas to be efficiently directed toward the peripheral edge of the wafer W supported by the hot plate 360. This effectively prevents the inert gas discharged from the discharge ports 360d formed at the bottom of the groove 360e from adhering to the peripheral edge of the back surface of the wafer W.

[0051] The main body 360a of the heating plate 360 ​​may be provided with, for example, a plurality of suction holes (not shown) for suctioning the wafer W to the heating plate 360.

[0052] 3, inside the lower chamber 322 and below the hot plate 360, e.g., three lift pins 370 are provided as a lifting unit that supports and lifts the wafer W from below. The lift pins 370 can be moved up and down by a lifting driver 371 having a drive source such as a motor. Near the center of the main body 360a of the hot plate 360, three through holes 372 are formed that penetrate the main body 360a in the thickness direction. The lift pins 370 are inserted through the through holes 372 and can protrude from the upper surface of the main body 360a of the hot plate 360.

[0053] As shown in FIGS. 3 and 4 , the temperature adjustment unit 311 has a temperature adjustment plate 380. The temperature adjustment plate 380 has a substantially rectangular flat plate shape, and the end surface facing the hot plate 360 ​​is curved in an arc. Two slits 381 are formed in the temperature adjustment plate 380 along the Y direction. The slits 381 are formed from the end surface of the temperature adjustment plate 380 facing the hot plate 360 ​​to near the center of the temperature adjustment plate 380. The slits 381 prevent the temperature adjustment plate 380 from interfering with the lift pins 370 and the lift pins 390 described below. The temperature adjustment plate 380 also contains a temperature adjustment member (not shown), such as cooling water or a Peltier element. The temperature of the temperature adjustment plate 380 is controlled, for example, by the control unit 100, and the wafer W placed on the temperature adjustment plate 380 is adjusted to a predetermined temperature.

[0054] The temperature adjustment plate 380 is supported by a support arm 382. A drive unit 383 having a drive source such as a motor is attached to the support arm 382. The drive unit 383 is attached to a rail 384 extending in the Y direction. The rail 384 extends from the temperature adjustment unit 311 to the heat treatment unit 310. The drive unit 383 enables the temperature adjustment plate 380 to move along the rail 384 between an initial position in the temperature adjustment unit 311 and a transfer position in the heat treatment unit 310.

[0055] At the initial position, the wafer W is transferred between the transfer arm of the wafer transfer device 41 or 42 and the temperature adjustment plate 380 via the lift pins 390 described below. At the transfer position, the wafer W is transferred between the heat plate 360 ​​and the temperature adjustment plate 380 via the lift pins 370 described below.

[0056] Below the temperature adjustment plate 380, for example, three lift pins 390 are provided to support the wafer W from below and lift it up and down. The lift pins 390 can be moved up and down by a lift drive unit 391 having a drive source such as a motor. The lift pins 390 are inserted through slits 381 and can protrude from the upper surface of the temperature adjustment plate 380.

[0057] <Supply mechanism 500> Next, a description will be given of the developing fluid supply mechanism 500. Figure 9 is a diagram for explaining the configuration of the developing fluid supply mechanism 500.

[0058] As shown in FIG. 9 , the supply mechanism 500 includes a vaporizer 501 as a developer fluid generator that generates a developer fluid from a developer liquid. The vaporizer 501 vaporizes a mixed solution of an acid and an organic solvent as a developer liquid to generate a developer fluid. One end of a supply path 502 is connected to the vaporizer 501. The other end of the supply path 502 is connected to the developing unit 200, specifically, to the shower head 330 of the developing unit 200. The supply path 502 is made of a fluororesin that is corrosion-resistant against acids. The supply path 502 is also provided with a heater 503 that heats the supply path 502 and serves as a heating unit that heats the developer fluid supplied to the developing unit 200 via the supply path 502. The heater 503 is formed, for example, in a tape shape, i.e., a tape heater, and is wound around the supply path 502 when in use. The heater 503 is controlled by the control unit 100. By controlling the heater 503 by the control unit 100, the temperature of the developing fluid supplied from the supply mechanism 500 is adjusted, specifically, the temperature is adjusted to a desired value, and more specifically, the temperature is adjusted so that the temperature when it reaches the wafer W in the processing space K1 is a desired value (e.g., equivalent to the temperature of the wafer W).

[0059] The heater 503 is provided at least downstream of the supply path 502. An on-off valve 504 for controlling the flow of the developing gas in the supply path 502 is provided upstream of the portion of the supply path 502 where the heater 503 is provided. The on-off valve 504 is controlled by the control unit 100. The developing fluid is sent to 0. The concentration of the weak acid in the developing fluid supplied from the supply mechanism 500 is adjusted by the control of the control unit 100 based on the measurement result by the concentration sensor 550, and specifically, the concentration is adjusted to a desired value.

[0060] A supply source 511 of an inert gas as a carrier gas is connected to the vaporizer 501 via a gas supply path 512. The gas supply path 512 is provided with a supply device group 513 including an on-off valve for controlling the flow of the inert gas in the gas supply path 512 and a gas flow rate control valve 513a for adjusting the flow rate of the inert gas. The supply device group 513 is controlled by the control unit 100. Further, vaporizer 501 is connected to tank 521, which stores a mixed solution of acid and organic solvent, via liquid supply path 522. Liquid supply path 522 is provided with supply equipment group 523, which includes an on-off valve for controlling the flow of the mixed solution through liquid supply path 522 and a liquid flow rate control valve 523a for adjusting the flow rate of the mixed solution. Supply equipment group 523 is controlled by control unit 100. Note that the supply of the mixed solution of acid and organic solvent is not limited to from tank 521, and may be configured such that, for example, a supply pipe for the mixed solution from equipment in a factory in which developing device 30 is installed is connected to liquid supply path 522.

[0061] Furthermore, a branch path 505 is connected to the supply path 502. Specifically, one end of the branch path 505 is connected to a position in the supply path 502 between the vaporizer 501 and the on-off valve 504. The other end of the branch path 505 is connected to a drain tank 530. An on-off valve 506 is provided in the branch path 505 to control the flow of the developing fluid in the branch path 505. The on-off valve 506 is controlled by the control unit 100.

[0062] In the supply mechanism 500, for example, the vaporizer 501 constantly generates a developing fluid, and when the generated developing gas is not supplied to the developing unit 200, it flows toward the branch path 505. The vapor, i.e., gas, of the mixed solution of acid and organic solvent contained in the developing fluid flowed toward the branch path 505 is cooled and re-liquefied, and is stored in the drain tank 530. The mixed solution stored in the drain tank 530 may be returned to the tank 521. In other words, the mixed solution may be circulated.

[0063] The vaporizer 501 also has a flow path 541 through which an inert gas flows, a flow path 542 through which the mixed solution flows, and a flow path 543 through which a mixed fluid obtained by mixing the inert gas and the mixed solution flows and the mixed fluid is heated to vaporize the mixed solution. Furthermore, in vaporizer 501, the inner wall surfaces of the flow paths through which the acid (liquid) or acid vapor flows are formed of a nickel-chromium alloy, silicon, or a silicon compound, which have corrosion resistance against acid. Specifically, in vaporizer 501, for example, the members forming flow paths 541, 542, and 543 are made of a nickel-chromium alloy, silicon, or a silicon compound.

[0064] The supply mechanism 500 also includes a concentration sensor 550 that measures the concentration of the weak acid in the developing fluid. The concentration sensor 550 is disposed, for example, between the vaporizer 501 and the on-off valve 504 in the supply path 502. The measurement results from the concentration sensor 550 are sent to the control unit 100. The control unit 100 controls the control based on the measurement results from the concentration sensor 550 to adjust the concentration of the weak acid in the developing fluid supplied from the supply mechanism 500; specifically, the concentration is adjusted to a desired value. In the supply mechanism 500, the concentration of the weak acid in the developing fluid can be adjusted, for example, by the heating temperature of the mixed solution in the vaporizer 501 (specifically, the heating temperature of the mixed fluid in the flow path 543 of the vaporizer 501), the supply flow rate of the mixed solution to the vaporizer 501, or the supply flow rate of the inert gas as a carrier gas to the vaporizer 501.

[0065] At least a part of the supply mechanism 500 is provided adjacent to the developing unit 200 to which the developing fluid is supplied, for example. Specifically, a part of the supply mechanism 500 including the vaporizer 501 is provided adjacent to the developing unit 200 to which the developing fluid is supplied.

[0066] The developing device according to this embodiment includes at least the vaporizer 501 of the supply mechanism 500 and the developing unit 200 described above.

[0067] <Arrangement of the supply mechanism 500> 10 and 11 are diagrams illustrating examples of the arrangement of the supply mechanism 500, each showing the rear surface (the surface on the positive side in the X direction) of the second block G2 in the wafer processing system 1. FIG. A part of the supply mechanism 500, including the vaporizer 501 and the concentration sensor 550, may be formed into a block. The block BL, including the vaporizer 501 and the concentration sensor 550 of the supply mechanism 500, may be configured to face the developing unit 200 to which the developer fluid is supplied, at a height corresponding to the developing unit 200, i.e., at the same height as the developing unit 200. Furthermore, the block BL may be configured to be provided adjacent to the developing unit 200 to which the developer fluid is supplied.

[0068] In the second block G2 of the wafer processing system 1, for example, as shown in FIG. 10 , two stacked developing units 200 and an electrical component unit 201 common to the two stacked developing units 200 are defined as one combined unit Gr. A plurality of such combined units Gr are arranged horizontally and vertically. In this case, for example, the blocks BL corresponding to the two developing units 200 included in one combined unit Gr may be combined into one common block BLm and disposed adjacent to the rear surface (the surface on the positive side in the X direction) of the combined unit Gr. This improves the controllability and responsiveness of the concentration of the developing fluid and the flow rate of the developing fluid supplied to the developing units 200. Furthermore, it is preferable that the vaporizer 501 and the concentration sensor 550 included in the common block BLm be disposed facing the developing unit 200 to which the fluid is supplied, rather than the electrical component unit 201.

[0069] 11, in the second block G2 of the wafer processing system 1, one developing unit 200 and an electrical component unit 201 aligned horizontally with the developing unit 200 and corresponding to the developing unit may be defined as one combined unit Gr, with multiple combined units Gr aligned horizontally and vertically. In this case, the block BL corresponding to the developing unit 200 included in one combined unit Gr may be provided adjacent to the rear surface (the surface on the positive side in the X direction) of the combined unit Gr. This also improves the controllability and responsiveness of the concentration of the developing fluid and the flow rate of the developing fluid supplied to the developing unit 200. Furthermore, it is preferable that the vaporizer 501 and concentration sensor 550 included in the block BL be provided so as to face the developing unit 200 to which the developing fluid is supplied, rather than the electrical component unit 201.

[0070] Furthermore, the block BL or the common block BLm of the supply mechanism 500 may be configured to be partially detachable and movable. In this case, by partially removing the block BL or the common block BLm of the supply mechanism 500, it is possible to perform maintenance on the developing unit 200 to which the developing fluid is supplied by the supply mechanism 500. In other words, the above-mentioned configuration makes it easy to perform maintenance on the developing unit 200 whose back surface is adjacent to the corresponding block BL or common block BLm.

[0071] <Processing sequence example 1> Next, a description will be given of an example of a processing sequence executed by the wafer processing system 1. Fig. 12 is a flowchart showing the main steps of Example 1 of the processing sequence.

[0072] (Step S1) First, the wafer W is loaded into the wafer processing system 1. Specifically, a cassette C containing a plurality of wafers W is carried into cassette station 2 of wafer processing system 1 and placed on cassette mounting plate 24. Next, wafer transfer device 22 or wafer transfer device 23 sequentially removes each wafer W from cassette C and transfers them to a transfer device in third block G3.

[0073] (Step S2) Next, the wafer W is subjected to an anti-reflection film forming process, and an anti-reflection film is formed on the wafer W. Specifically, the wafer W transferred to the transfer device in the third block G3 is supported by the wafer transfer device 33 and transferred to the anti-reflection film forming device provided in the first block G1, where an anti-reflection film is formed as an undercoat film for the metal-containing resist so as to cover the surface of the wafer W. This step S2 may be omitted.

[0074] (Step S3) Next, the wafer W is subjected to a resist coating process, and a resist film is formed on the wafer W. Specifically, the wafer W is supported by the wafer transport device 33 and transported to a resist film forming device installed in the first block G1, and a metal-containing resist film is formed so as to cover the anti-reflective film acting as an undercoat film on the wafer W.

[0075] (Step S4) Subsequently, the wafer W is subjected to a PAB process. Specifically, the wafer W is supported by the wafer transfer device 33 and transferred to a heat treatment device for PAB treatment in the second block G2, where it is subjected to PAB treatment. Thereafter, the wafer W is transferred to the transfer device in the fifth block G5. Note that, when there are multiple processing stations 3 as shown in FIGS. 1 and 2, the wafer W is temporarily placed in the transfer device in the fourth block G4 before being transferred to the transfer device in the fifth block G5, and then transferred between the multiple wafer transfer devices 33.

[0076] (Step S5) Next, the wafer W is subjected to an exposure process. Specifically, the wafer W transferred to the transfer device in the fifth block G5 is transferred to the exposure device by the wafer transfer device 41 and the wafer transfer device 42, where a pattern exposure process using EUV (Extreme Ultra-Violet) light is performed on the wafer W. The pattern exposure process is an exposure process that transfers a mask pattern. After the exposure process, the wafer W is transferred to the transfer device in the fifth block G5 by the wafer transfer device 41 and the wafer transfer device 42.

[0077] (Step S6) Next, the wafer W is subjected to PEB processing by the developing unit 200. Specifically, for example, first, the wafer W is loaded into the processing chamber 300 of the developing unit 200. More specifically, the wafer W transferred to the transfer device in the fifth block G5 after the optical processing is loaded into the processing chamber 300 by the wafer transfer device 33, and then the lift pins 390 are raised and the wafer W is transferred from the wafer transfer device 33 to the lift pins 390. Next, the lift pins 390 are lowered and the wafer W is placed on the temperature adjustment plate 380 in its initial position. Subsequently, the temperature adjustment plate 380 is moved to a transfer position above the heating plate 360. Thereafter, the lift pins 370 are raised and the wafer W is transferred to the lift pins 370. Then, the temperature adjustment plate 380 is returned to its initial position.

[0078] After the wafer W is loaded into the processing chamber 300, the wafer W is subjected to PEB processing. Specifically, for example, the upper chamber 321 is lowered, the interior of the chamber 320 is sealed, and the processing space K1 is formed. Next, the lifting pins 370 are lowered, and the wafer W is moved to a PEB processing height at a predetermined distance from the heating plate 360, and the PEB processing is initiated. Specifically, the PEB processing height is a height at which the temperature of the wafer W reaches a predetermined temperature at which dehydration and condensation of the metal-containing resist on the wafer W progresses, and the predetermined temperature is, for example, 140 to 160°C. During the PEB process, at least one of evacuation of the processing space K1 via the central exhaust path 340 and evacuation of the processing space K1 via the outer peripheral exhaust path 350 is performed. Furthermore, the shower head 330 may be configured to be able to supply gas for PEB processing (for example, a temperature and humidity adjusting gas containing oxygen), and the gas for PEB processing may be discharged from the shower head 330 into the processing space K1 during the PEB processing. For example, after the wafer W is moved to the PEB processing height, the PEB processing ends when a predetermined time has elapsed.

[0079] The PEB treatment may be performed by a heat treatment device for PEB treatment in the second block G2.

[0080] (Step S7) Subsequently, the wafer W is developed with the developing fluid in which the concentration of the weak acid has been adjusted. Specifically, the wafer W is developed as described above.

[0081] Specifically, for example, first, without removing the wafer W after the PEB processing from the developing unit 200, the lift pins 370 supporting the wafer W are lowered in the same developing unit 200. This brings the wafer W closer to the heating plate 360, and more specifically, the wafer W is transferred from the lift pins 370 to the heating plate 360 ​​(specifically, the protrusions 360c) and supported thereon. The wafer W is then adsorbed to the heating plate 360 ​​via adsorption holes (not shown).

[0082] Next, the developing fluid, the temperature and the concentration of the weak acid of which have been adjusted, is supplied from the supply mechanism 500 to the processing space K1, and the wafer W is developed with the developing fluid. Specifically, a developing fluid, the temperature and weak acid concentration of which are adjusted to desired values, is ejected from the shower head 330 toward the surface of the wafer W. Furthermore, at least one of exhausting the processing space K1 via the central exhaust path 340 and exhausting the processing space K1 via the peripheral exhaust path 350 is performed. As a result, the wafer W heated by the heating plate 360 ​​is exposed to an acid atmosphere containing a weak acid gas within the processing space K1. When exposed to the acid atmosphere, the unexposed portions of the metal-containing resist film on the wafer W react with the weak acid gas and become smaller molecules. Furthermore, by heating the wafer W, the unexposed portions of the metal-containing resist film on the wafer W that have been reduced in molecular weight by the reaction with the weak acid gas sublimate, forming a metal-containing resist pattern. For example, if the weak acid gas is acetic acid gas and the metal-containing resist contains tin as a metal, tin acetate sublimes. The sublimate is discharged outside the processing space K1 by exhausting the processing space K1.

[0083] In addition, in step S7, an inert gas is also discharged from the discharge port 360d of the heating plate 360 ​​toward the rear surface side of the wafer W. This makes it possible to prevent the products produced during development from adhering to the rear surface of the wafer W in step S7.

[0084] In step S7, the discharge of the developing fluid from the shower head 330, the evacuation of the processing space K1, and the discharge of the inert gas from the discharge port 360d are performed so that the inside of the processing space K1 is under a predetermined pressure equal to or higher than atmospheric pressure. The "atmospheric pressure" is, for example, 670 Torr to 760 Torr.

[0085] (Step S8) Next, the wafer W is subjected to weak development using a developer fluid with an adjusted concentration of weak acid. Specifically, the wafer W is subjected to weak development using a developing fluid from the supply mechanism 500, the temperature and concentration of which are adjusted. More specifically, following step S7, the following occurs: The developing fluid, the temperature and concentration of which is adjusted, is discharged from the shower head 330 toward the front surface of the wafer W. At least one of exhausting the processing space K1 via the central exhaust path 340 and exhausting the processing space K1 via the outer peripheral exhaust path 350 Inert gas is directed from the outlet 360d of the heating plate 360 ​​to the rear surface of the wafer W.

[0086] However, in step S8, for example, at least one of the following is performed so that the development by the developing fluid is weaker than in step S7. A decrease in the amount of developer fluid discharged from the shower head 330 (i.e., a decrease in the amount of developer fluid supplied from the supply mechanism 500 to the shower head 330) A decrease in the temperature of the developing fluid discharged from the shower head 330 (i.e., a decrease in the temperature of the developing fluid supplied from the supply mechanism 500 to the shower head 330) A reduction in the concentration of the weak acid in the developer fluid from the showerhead 330 (i.e., a reduction in the concentration in the developer fluid supplied from the supply mechanism 500 to the showerhead 330) Addition of weakly developing substances to the mixed solution of weak acid and organic solvent supplied to the vaporizer

[0087] The concentration of the weak acid in the developing fluid can be adjusted by, for example, the heating temperature of the mixed fluid in the flow path 543 of the vaporizer 501 or the supply flow rate of the inert gas to the vaporizer 501, as described above.

[0088] A weakly developable substance is a substance with a larger acid dissociation constant (pka) than the weak acid contained in the original mixed solution. If the weak acid contained in the original mixed solution is acetic acid (pka ≒ 4.76), examples of weakly developable substances include carboxylic acid-based, alcohol-based, and aminosilane-based substances as follows: Carboxylic acid Propionic acid (pka≒4.87) Alcohol-based Methanol (pka≒15.4), 2,2,2-trifluoroethanol (pka≒12.4), nonafluoro-tert-butyl alcohol (pka≒5.4), phenol (pka≒9.95), pentafluorophenol (pka≒5.5) Aminosilane Trimethylsilyldimethylamine (TMSDMA) (pka≒10.7)

[0089] The weakly developing substance to be added is preferably a volatile substance that becomes gas at room temperature.

[0090] In step S8, an inert gas is also discharged from the discharge port 360d of the heating plate 360 ​​toward the rear surface side of the wafer W, similarly to step S7. This makes it possible to prevent the products of development from adhering to the rear surface of the wafer W in step S8.

[0091] Furthermore, in step S8, as in step S7, the discharge of the developing fluid from the shower head 330, the evacuation of the processing space K1, and the discharge of the inert gas from the outlet 360d are carried out so that the processing space K1 is under a predetermined pressure equal to or higher than atmospheric pressure.

[0092] After a predetermined time has elapsed since the start of step S8, the supply of the developing fluid to the processing space K1 is stopped; specifically, the on-off valve 504 interposed in the supply path 502 is closed, and step S8 is completed.

[0093] The temperature of the wafer W during development in steps S7 and S8 is higher than the temperature during the PEB process in step S6, for example, 180 to 200°C. However, it is not necessary to change the temperature of the heating plate 360 ​​between the development and PEB processes. This is because the wafer W is closer to the heating plate 360 ​​during development in steps S7 and S8 than during PEB; more specifically, because the wafer W is supported by the heating plate 360 ​​(specifically, the protrusions 360c). That is, in the process sequence of this example, the wafer W is closer to the heating plate 360 ​​during development than during PEB, thereby making the processing temperature of the wafer W during PEB processing higher than during development.

[0094] Even after the supply of the developing fluid to the processing space K1 is stopped, the evacuation of the processing space K1 and the discharge of the inert gas from the discharge port 360d may continue, so that the atmosphere containing the weak acid gas in the processing space K1 is replaced with an inert gas atmosphere. When this replacement is performed, for example, the evacuation of the processing space K1 and the discharge of the inert gas from the discharge port 360d continue until a predetermined time has elapsed since the supply of the developing fluid to the processing space K1 was stopped. Furthermore, if the above-mentioned time is not elapsed, the evacuation of the processing space K1 and the like are stopped together with the supply of the developing fluid to the processing space K1.

[0095] Thereafter, the wafer W is unloaded from the processing chamber 300. Specifically, for example, the wafer W is unloaded from the processing vessel 300 and unloaded to the outside of the developing unit 200 in the reverse order of the loading into the processing vessel 300 in step S6.

[0096] (Step S9) After development, the wafer W is subjected to POST processing. Specifically, the wafer W is transferred by the wafer transfer device 33 to the heat treatment unit 40 for the POST treatment, and the POST treatment is performed. This step S9 may be omitted.

[0097] (Step S10) Then, the wafer W is unloaded from the wafer processing system 1. Specifically, the wafer W is transferred by wafer transfer device 33 to a transfer device in third block G3, and then transferred by wafer transfer device 22 or 23 in cassette station 2 to a cassette C on a predetermined cassette mounting plate 24. In this way, a series of photolithography steps is completed.

[0098] <Major Effects of This Embodiment> As described above, the example 1 of the processing sequence includes the steps (steps S7 and S8) of developing a wafer W that has been coated with a resist (specifically, a metal-containing resist) and subjected to an exposure process. The developing steps (steps S7 and S8) involve supplying a developing fluid containing a weak acid gas into the processing space K1 to develop the wafer W in the processing space K1. The concentration of the weak acid in the developing fluid supplied into the processing space K1 is adjusted, specifically, adjusted to a desired value. Therefore, according to the example 1 of the processing sequence, the wafer W can be developed with a desired intensity compared to when the concentration of the weak acid in the developing fluid supplied into the processing space K1 is not adjusted. Therefore, overdevelopment or underdevelopment of the wafer W can be prevented, and development using the developing fluid containing a weak acid gas can be performed satisfactorily.

[0099] In addition, in the example 1 processing sequence, in step S8, which is the later stage of the developing process (steps S7 and S8), the strength of development of the wafer W with the developing fluid is weakened compared to step S7. In developing the wafer W with a developing fluid containing a weak acid gas, removal of the resist coating proceeds in the thickness direction, i.e., vertical direction, and then in the direction parallel to the surface of the wafer W, i.e., horizontal direction. Furthermore, in the resist coating, the exposure dose in the exposure process using an exposure device is smaller on the lower side than on the upper side. Therefore, in negative development of the resist coating, removal of the coating proceeds more easily on the lower side than on the upper side. For example, in the case of a metal-containing resist coating, substitution of ligands with hydroxyl groups and subsequent dehydration condensation do not proceed as easily on the lower side compared to the upper side, so removal of the coating proceeds more easily in negative development. Therefore, if development is strong in the later stage of development, in which removal of the coating proceeds horizontally, the resist pattern obtained by development will have a narrower shape at the bottom in cross-section. Therefore, as described above, in step S8, which is the later stage of the development process, the strength of the development of the wafer W by the developing fluid is weakened compared to step S7, thereby preventing the resist pattern obtained by development from becoming thinner at the bottom.

[0100] Furthermore, in the processing sequence example 1, both the PEB processing and the development processing are performed in the development unit 200, and both processing are performed consecutively without removing the wafer from (the processing vessel 300 of) the development unit 200. Therefore, it is possible to prevent the time from the end of the PEB processing to the start of the development processing from differing for each wafer W. Furthermore, in the above example, when the PEB process and the development process including heating of the wafer W are performed consecutively in the same development unit 200, the wafer W is brought closer to the heating plate 360 ​​during the development process than during the PEB process, thereby making the processing temperature of the wafer W higher during the PEB process than during the development process. Therefore, the processing temperature of the wafer W during the PEB process can be made higher than during the development process while maintaining the set temperature of the heating plate 360 ​​constant. Therefore, there is no need to change the set temperature of the heating plate for the PEB process after the development process, and there is no need to wait for the temperature of the heating plate to be set after the set temperature is changed. Therefore, according to this example, when the PEB process and the development process including heating of the wafer W are performed consecutively in the same development unit and the processing temperature of the wafer W during the PEB process is higher than during the development process, throughput can be improved.

[0101] The developing apparatus according to this embodiment includes a vaporizer 501 as a developing fluid generator that generates a developing fluid containing a weak acid gas from a developing liquid, and a developing unit 200 that develops the wafer W with the developing fluid. The developing unit 200 has a chamber 320 that forms a processing space K1 that accommodates a wafer W and is provided with a discharge port 331 for discharging the developing fluid into the processing space K1. In addition to discharging the developing fluid from the discharge port 331 toward the front side of the wafer W in the processing space K1, the developing unit 200 also has another discharge port 360d that discharges a predetermined gas (specifically, an inert gas) toward the back side of the wafer W in the processing space K1. Therefore, the developing unit 200 can discharge the predetermined gas (specifically, an inert gas) toward the back side of the wafer W in the processing space K1 during development, thereby preventing development products from adhering to the back side of the wafer W. This allows for successful development using a developing fluid containing a weak acid gas.

[0102] Furthermore, in this embodiment, the developing unit 200 is provided with a heat exchanger 364 as a developing section that heats a predetermined gas (specifically, an inert gas) that is sprayed toward the backside of the wafer W in the processing space K1. This makes it possible to prevent the wafer W from being cooled by the predetermined gas sprayed onto the wafer W during development. In particular, it is possible to prevent the wafer W, which is heated during development, from being cooled by the predetermined gas during development.

[0103] Furthermore, in this embodiment, the developing unit 200 further includes a heating plate 360 ​​that supports the wafer W in the processing space K1, and a groove 360e having an annular shape in a planar view is formed on the upper surface of the heating plate 360. Specifically, the groove 360e having an annular shape in a planar view is formed on the upper surface of the main body 360a of the heating plate 360. A discharge port 360d is formed at the bottom of the groove 360e along the groove 360e. Therefore, it is possible to prevent the purge gas discharged from the discharge port 360d from being biased in the circumferential direction.

[0104] The supply mechanism 500 serving as a developer fluid supply device according to this embodiment includes a supply path 502 connected to the developing unit 200, a vaporizer 501 serving as a developer fluid generator, and a heater 503 serving as a heating unit for heating the developer fluid supplied to the developing unit 200 via the supply path 502. To ensure proper development of the metal-containing resist on the wafer W using a developer fluid containing a weak acid gas, the temperature of the developer fluid upon reaching the wafer W in the developing unit 200 is preferably higher than room temperature, and more specifically, preferably approximately equal to the temperature of the wafer W being heated. The heater 503 in the supply mechanism 500 allows the temperature of the developer fluid upon reaching the wafer W to be adjusted to the above-described temperature. In other words, the supply mechanism 500 according to this embodiment can supply a developer fluid containing a weak acid gas suitable for developing a metal-containing resist.

[0105] As described above, the supply mechanism 500 may be partially blocked, including the vaporizer 501 and the concentration sensor 550. The block BL, including the vaporizer 501 and the concentration sensor 550, may be configured to be located at the same height as the developing unit 200 to which the developer fluid is supplied. This shortens the distance of the supply path 502 from the vaporizer 501 to the developing unit 200. As a result, it becomes easier to control the temperature of the supply path 502, which may cause condensation of the developer fluid at low temperatures. Furthermore, it is possible to shorten the time from when the concentration of the weak acid in the developer fluid generated by the vaporizer 501 is changed to when the concentration of the weak acid in the developer fluid supplied to the developing unit 200 is actually changed. This shortens the time required for this change. This improves the response to the control of the concentration of the weak acid in the developer fluid.

[0106] <Processing sequence example 2> FIG. 13 is a flowchart showing main steps of an example 2 of the processing sequence executed by the wafer processing system 1. In this example, unlike Example 1 of the processing sequence, after the development process using the developing fluid, i.e., after step S8, the wafer W is subjected to ultraviolet irradiation processing to modify the post-development residue on the wafer W (step S11). Then, the modified residue is removed with a remover (step S12).

[0107] In step S11, specifically, the developed wafer W is supported by the wafer transfer device 33 and transferred to the ultraviolet irradiation device in the processing station 3, where it is subjected to ultraviolet irradiation processing. The ultraviolet irradiation device is provided in the second block G2 in the processing station 3, similar to the heat treatment device, for example. The ultraviolet irradiation processing is a process of irradiating the entire upper surface of the wafer W, i.e., the entire surface, with ultraviolet rays. Specifically, it is a process of irradiating the entire surface of the wafer W with ultraviolet rays without a mask. Note that "the entire surface of the wafer W" includes at least the entire device formation region of the wafer W. The wavelength of the ultraviolet rays used in the ultraviolet irradiation processing is longer than that of EUV light, for example, not less than 100 nm and less than 300 nm. Furthermore, the ultraviolet irradiation processing is performed, for example, in an atmospheric gas atmosphere.

[0108] This UV irradiation treatment modifies the unexposed portions of the metal-containing resist on the wafer W that remain after development. Specifically, in the unexposed portions of the metal-containing resist on the wafer W, UV irradiation breaks the bond between the metal and the ligand in the remaining metal-containing resist (i.e., the ligand is released), and then the resist is hydroxylated, i.e., made hydrophilic. Note that in the exposed portions of the metal-containing resist on the wafer W, dehydration condensation occurs and the resist is made hydrophobic, so UV irradiation is unlikely to cause the above-mentioned hydrophilization.

[0109] In step S12, specifically, the wafer W after UV irradiation is supported by the wafer transfer device 33 and transferred to the removal device in the processing station 3, where residues on the modified wafer W are removed with a removal solution. The removal device, like the resist film forming device, is provided in the second block G1 of the processing station 3. A polar solution, specifically, an aqueous solution, such as a tetramethylammonium hydroxide (TMAH) solution, is used as the removal solution. Most or all of the metal-containing resist residue on the wafer W that has been hydrophilized by UV irradiation was present in the unexposed areas and is dissolved in this polar solution and removed from the wafer W. As mentioned above, the exposed areas of the metal-containing resist on the wafer W are less likely to be hydrophilized and therefore remain less polar. Therefore, they are not dissolved in the polar solution and are not removed from the wafer. Considering the case where UV irradiation is performed before development, it may be necessary to consider a method for adjusting the degree of hydrophilization in areas near the pattern boundary, such as intermediately exposed areas in the metal-containing resist, in order to stabilize pattern roughness. In other words, by performing ultraviolet treatment after forming a pattern by development, it is possible to modify the residue while reducing the risk of worsening pattern roughness.

[0110] The example 2 of the processing sequence further includes, after the developing step, a step of applying ultraviolet irradiation processing to the wafer W to modify post-development residue on the wafer W (step S11), and then a step of removing the modified residue with a remover (step S12). According to the example of the processing sequence, the post-development residue on the wafer W can be reduced, thereby enabling better development, and more specifically, a better resist pattern can be obtained.

[0111] It should be noted that steps S11 and S12 are performed between steps S8 and S9, for example.

[0112] <Processing sequence example 3> FIG. 14 is a flowchart showing main steps of an example 3 of a processing sequence executed by the wafer processing system 1. In this example, unlike Example 1 of the processing sequence, after the developing process using the developing fluid, i.e., after step S8, the wafer W is inspected (step S21), and based on the inspection results, the processing conditions in the developing process, i.e., the processing conditions in steps S7 and S8, are corrected by the control unit 100 as a correction unit (step S22).

[0113] In step S21, specifically, the developed wafer W is transported by the wafer transport device 33 or the like to an inspection device in the wafer processing system 1 and inspected. Specifically, for example, the entire top surface of the wafer W is imaged by the inspection device, and the control unit 100 acquires an image of the wafer W based on the imaged result.

[0114] Specifically, in step S22, for example, the control unit 100 corrects the processing conditions for the subsequent steps S7 and S8 for the wafer W based on the image of the wafer W as the inspection result in step S21. The correction is performed, for example, so that the development result by the developing fluid becomes more uniform within the surface of the wafer W.

[0115] The processing conditions to be corrected are the dimensions (CD: Critical Area) of the metal-containing resist pattern obtained by development. The heat dissipation factor is a condition that affects the pattern dimension, such as the heat dissipation of the heaters 360b in each of the regions R1-R5 of the hot plate 360. If there is a portion of the developed wafer W where the dimensions of the metal-containing resist pattern are small, the heat dissipation factor of the heaters 360b in one of the regions R1-R5 of the hot plate 360 ​​corresponding to that portion is adjusted to be smaller. By adjusting the heat dissipation factor in one of the regions R1-R5 of the hot plate 360, the strength of the resist film removal action by the developing fluid is changed in the corresponding region of the metal-containing resist pattern, thereby controlling the pattern dimension. The reaction process of metal-containing resist, which involves a condensation reaction leading to an insolubilized state in the developing fluid, differs from that of conventional chemically amplified resists. While the moisture around the metal-containing resist film has a significant effect on the reaction during PEB, the pattern dimension is not sensitive to temperature changes during PEB itself. Therefore, controlling the temperature or temperature distribution during PEB of the metal-containing resist film makes it difficult to adjust the pattern dimension. From the above, in order to adjust the pattern dimensions of the metal-containing resist, it is preferable to adjust the removal action of the developing fluid on the unexposed areas of the metal-containing resist film by adjusting the temperature conditions during development rather than controlling the temperature during PEB, because this method makes it easier to change the pattern dimensions and adjust them to the desired pattern dimensions.

[0116] The processing condition to be corrected may also be the temperature of the inert gas discharged from the discharge port 360d.

[0117] Furthermore, the process condition to be corrected may be the concentration distribution of the developing fluid in the processing space K1. Specifically, the ratio (balance) of the exhaust rate of the processing space K1 via the central exhaust path 340 to the exhaust rate of the processing space K1 via the peripheral exhaust path 350, which affects the concentration distribution, may be used. According to repeated testing by the inventors, when the exhaust rate of the processing space K1 via the central exhaust path 340 is large, the concentration of the developing fluid in the processing space K1 becomes high above the center of the wafer W, which facilitates development of the central portion of the wafer W with the developing fluid. On the other hand, when the exhaust rate of the processing space K1 via the peripheral exhaust path 350 is large, the concentration of the developing fluid in the processing space K1 becomes high above the periphery of the wafer W, which facilitates development of the periphery of the wafer W with the developing fluid. Therefore, when the dimensions of the metal-containing resist pattern at the periphery of the wafer W after development are large, the balance is corrected so that the exhaust rate of the processing space K1 via the peripheral exhaust path 350 is increased.

[0118] According to the processing sequence example 3, the shape of the resist pattern after development can be made closer to the desired shape. Specifically, according to the processing sequence example 3, the shape of the metal-containing resist pattern obtained by development can be made uniform across the wafer surface.

[0119] Step S21 is performed between step S8 and step S9, for example, and step S22 is performed after step S21 and before step S1 for the next wafer W, for example.

[0120] <Modification of Processing Sequence Example 3> In the above example, the correction of the processing conditions in the developing step using the developing fluid is performed based on the inspection results of the wafer W after the developing step, i.e., after development by the developing unit 200. Alternatively, the correction of the processing conditions in the developing step using the developing fluid may be performed based on any of the following: The state of the wafer W (for example, the temperature distribution of the wafer W) during development (specifically, during steps S7 and S8, i.e., during development by the development unit 200) The state of the developing unit 200 during development (for example, the output of the heater 360b to each of the regions R1 to R5 of the heat plate 360) Inspection results of the wafer after post-processing (e.g., etching using the developed resist pattern as a mask) performed on the developed wafer W The state of the wafer W during the above post-process (for example, the temperature distribution of the wafer W) The state of the post-processing processing unit during the above post-processing (for example, the temperature distribution of the heating unit that supports and heats the wafer during etching in an etching apparatus that performs etching using a developed resist pattern as a mask)

[0121] When the temperature distribution of the wafer W is used as the state of the wafer W during development, the temperature of the wafer W during development is acquired by a temperature sensor provided on the lift pins 370 or the protrusions 360c of the heating plate 360, for example.

[0122] For example, when a temperature distribution of the wafer W is obtained in which the peripheral portion of the wafer W has a low temperature due to the discharge of inert gas from the discharge port 360d, the balance of the exhaust amount is corrected as described above so that the exhaust amount of the processing space K1 via the outer peripheral exhaust path 350 is increased.

[0123] Furthermore, when the measurement result of the temperature of the wafer W by the temperature sensor provided on the lift pins 370 differs from the measurement result of the temperature of the wafer W by the temperature sensor provided on the convex portion 360c located outside the lift pins 370, the development processing conditions may be corrected (adjusted) to compensate for the difference in the measurement results. The development processing conditions corrected in this case include the balance of the exhaust amounts described above, the temperature of the inert gas discharged from the discharge port 360d, etc.

[0124] <Processing sequence example 4> FIG. 15 is a flowchart showing main steps of a fourth example of a processing sequence executed by the wafer processing system 1. In this example, unlike Example 1 of the processing sequence, after the developing process using the developing fluid, i.e., after step S8, the aforementioned developing fluid is supplied into the processing space K1 as a cleaning fluid containing a weak acid gas, while the wafer W is not positioned in the processing space K1 (step S31).

[0125] In step S31, specifically, after the developed wafer W is unloaded from the processing vessel 300 in step S8, the upper chamber 321 is lowered, the interior of the chamber 320 is sealed, and the processing space K1 is re-formed. Then, a developing fluid serving as a cleaning fluid, the temperature and weak acid concentration of which have been adjusted to desired values, is discharged from the shower head 330 toward the front surface of the wafer W. Furthermore, the processing space K1 is evacuated via at least one of the central exhaust path 340 and the peripheral exhaust path 350. As a result, components of the developing unit 200 exposed to the processing space K1 (e.g., the hot plate 360 ​​and the chamber 320) are exposed to an acid atmosphere containing a weak acid gas. Development products adhering to the components react with the weak acid gas to be decomposed into smaller molecules, and then vaporize due to heat or the like. The vaporized material is discharged to the outside of the processing space K1 by exhausting the processing space K1.

[0126] According to the fourth example of the processing sequence, it is possible to prevent the cleanliness of the chamber 320 and the like from being deteriorated due to development.

[0127] Step S31 may be performed for each wafer W, or may be performed each time a predetermined number of two or more wafers W are processed. Step S31 may also be performed in parallel with other steps, such as step S9 in which a POST process is performed.

[0128] In addition, in step S31, the developing fluid supplied as a cleaning fluid may be supplied so as to have a higher resist (specifically, metal-containing resist) removal capability than the developing fluid supplied during development in steps S7 and S8. Specifically, at least one of the following may be satisfied: · The supply flow rate of developing fluid as a cleaning fluid is higher. · The temperature of the developer fluid as a cleaning fluid is lower. · Developer fluids as cleaning fluids have a lower concentration of weak acids. · The acid dissociation constant (pka) of the weak acid in the developer fluid as a cleaning fluid is smaller. During development, only the developing fluid contains a weak developing substance added to a mixed solution containing a weak acid that is vaporized in the supply mechanism 500 .

[0129] This allows the removal of development products from the components of the developing unit 200 exposed to the processing space K1, that is, cleaning, to be performed in a short time.

[0130] In cases where the acid dissociation constant (pka) of the weak acid in the developing fluid used as a cleaning fluid is smaller, i.e., in cases where the type of weak acid gas contained in the developing fluid is different, the supply mechanism for the developing fluid used as a cleaning fluid and the supply mechanism for the developing fluid used during development may be provided separately.

[0131] <Another Example 1 of the Developing Fluid Supply Mechanism> FIG. 16 is a diagram for explaining another example 1 of the supply mechanism for the developing fluid. 16 includes a dilution path 560 in addition to a concentration sensor 550, etc. The dilution path 560 is connected to a supply path 502, and supplies an inert gas to the supply path 502 as a dilution gas for diluting the developing fluid supplied to the developing unit 200 via the supply path 502.

[0132] One end of the dilution path 560 is connected to the supply path 502, and the other end is connected to a supply source 561 of an inert gas as a dilution gas. The dilution path 560 is also provided with a supply device group 563 including an on-off valve for controlling the flow of the inert gas in the dilution path 560 and a gas flow rate control valve 563a for adjusting the flow rate of the inert gas. The supply device group 563 is controlled by the control unit 100.

[0133] In the supply mechanism 500A, the flow rate of the inert gas supplied from the dilution path 560 to the supply path 502 is adjusted by the control of the control unit 100 based on the measurement result of the concentration sensor 550. For example, when the concentration of the weak acid in the mixed solution in the tank 521 is high and the concentration of the weak acid in the developing fluid vaporized in the vaporizer 501 and generated, i.e., the weak acid concentration measured by the concentration sensor 550, is high, the flow rate of the inert gas supplied from the dilution path 560 to the supply path 502 is reduced. On the other hand, when the concentration of the weak acid in the mixed solution in the tank 521 decreases over time and the concentration of the weak acid in the developing fluid vaporized in the vaporizer 501 and generated, i.e., the weak acid concentration measured by the concentration sensor 550, decreases, the flow rate of the inert gas supplied from the dilution path 560 to the supply path 502 is increased. This makes it possible to keep the concentration of the weak acid in the developing fluid supplied to the developing unit 200 via the supply path 502 constant, regardless of the concentration of the weak acid in the mixed solution in the tank 521 .

[0134] <Another Example 2 of the Developing Fluid Supply Mechanism> FIG. 17 is a diagram for explaining another example 2 of the supply mechanism for the developing fluid. In a developing fluid supply mechanism 500B in FIG. 17, a tank 521 that stores a mixed solution of a weak acid and an organic solvent is provided with a concentration sensor 570 that detects the concentration of the weak acid in the mixed solution.

[0135] In addition, in the supply mechanism 500B, a tank 581 is connected to the tank 521 via a supply path 582. The chemical solution stored in the tank 581 has a higher concentration of weak acid than the initial value of the concentration of the weak acid in the mixed solution in the tank 521. For example, if the mixed solution stored in the tank 521 is a chemical solution with an acetic acid concentration of 40%, the chemical solution stored in the tank 521 is a chemical solution with an acetic acid concentration of 100%.

[0136] One end of supply path 582 is connected to tank 521, and the other end is connected to tank 581. In addition, supply path 582 is provided with a supply device group 583 including an on-off valve that controls the flow of the chemical solution in supply path 582, a liquid flow rate control valve 583a that adjusts the flow rate of the chemical solution, etc. Supply device group 583 is controlled by control unit 100.

[0137] In the supply mechanism 500B, the control unit 100 controls the tank 521 to be replenished with a highly concentrated chemical solution from the tank 581 based on the measurement results from the concentration sensor 570, so that the concentration of the weak acid in the mixed solution in the tank 521 falls within a predetermined range even if the concentration decreases over time. This allows the concentration of the weak acid in the mixed solution in the tank 521 to be kept approximately constant, so that the concentration of the weak acid in the developing fluid supplied to the developing unit 200 via the supply path 502 can be adjusted to be approximately constant.

[0138] <Another Example of a Method for Changing the Temperature of the Wafer W During PEB Processing and Development> Unlike the above example, a predetermined gas (inert gas) may be discharged from the discharge port 360d not only during development in steps S7 and S8 but also during the PEB process in step S6, and the heat exchanger 364 may be controlled so that the temperature of the inert gas discharged during the PEB process is lower than that during development. This may cause the temperature of the wafer W during the PEB process to be lower than that during development.

[0139] <Another Example of a Method for Discharging Low-Temperature Gas from the Discharge Port 360d> FIG. 18 is a diagram for explaining another example of a method for discharging low-temperature gas from the discharge port 360d, and is a partially enlarged cross-sectional view that schematically shows the outline of the configuration of the peripheral edge portion of the heat plate 360. In the example of FIG. 18, in addition to a supply path 362 as a high-temperature supply path that supplies a predetermined gas (inert gas) heated by a heat exchanger 364 to the discharge port 360d, a low-temperature supply path 365 is connected to the discharge port 360d. The low-temperature supply path 365 is provided separately from the supply path 362, and supplies a predetermined gas (inert gas) that is at a lower temperature than the predetermined gas (inert gas) supplied from the supply path 362 to the discharge port 360d. Specifically, the low-temperature supply path 365 is provided separately from the supply path 362, for example, and supplies the predetermined gas (inert gas) that has not been heated by the heat exchanger 364 to the discharge port 360d. The discharge port 360d is connected to an inert gas supply mechanism 366 via the low-temperature supply path 365. Although not shown, the supply mechanism 366 has a group of supply devices including, for example, an inert gas supply source, and an on-off valve and a flow rate adjustment valve that control the flow of the inert gas.

[0140] 18, during the PEB processing in step S6, low-temperature gas supplied through the low-temperature supply path 365 is discharged from the outlet 360d, and during the development in steps S7 and S8, high-temperature gas supplied through the supply path 362 as a high-temperature supply path is discharged from the outlet 360d. This allows the temperature of the wafer W during the PEB processing to be lower than that during development.

[0141] This configuration allows the temperature of the predetermined gas (inert gas) discharged from the discharge port 360d to be quickly increased, thereby quickly increasing the temperature of the wafer W from a temperature suitable for PEB processing to a temperature suitable for development. The junction of the supply path 362 and the low-temperature supply path 365 is preferably located near the discharge port 360d, for example, directly below the heating plate 360. This allows the predetermined gas (inert gas) discharged from the discharge port 360d to be heated to a high temperature more quickly.

[0142] <Another example of a method for weakening the development by the developing fluid during development> FIG. 19 is a diagram for explaining another example of a method for weakening the development by the developing fluid during development. In this example, a plurality of supply mechanisms, each including a developer fluid generator, are connected to the shower head 330 of the developing unit 200. In the example of Fig. 18, two supply mechanisms 600 and 601 are connected to the shower head 330 of the developing unit 200. Each of the supply mechanisms 600 and 601 is configured similarly to, for example, the above-described supply mechanism 500.

[0143] In this example, the two supply mechanisms 600, 601 supply the developing fluid to the developing unit 200 so that the strength of development by the supplied developing fluid differs from each other. Specifically, the supply mechanism 600 for relatively strong development by the developing fluid and the supply mechanism 601 for relatively weak development by the developing fluid satisfy at least one of the following conditions: The supply flow rate of the developing fluid from the supply mechanism 601 is smaller. The temperature of the developer fluid supplied by the supply mechanism 601 is lower. The supply mechanism 601 supplies a developer fluid with a lower concentration of weak acid. In the supply mechanism 600, the weak developing substance is not added to the mixed solution containing the weak acid to be vaporized, whereas in the supply mechanism 601, the weak developing substance is added to the mixed solution.

[0144] Then, in the above-mentioned step S7, the developing fluid is supplied to the developing unit 200 from the supply mechanism 600 for relatively strong development with the developing fluid, and in the above-mentioned step S8, the developing fluid is supplied to the developing unit 200 from the supply mechanism 601 for relatively weak development with the developing fluid. That is, when moving from step S7 to step S8, the supply source of the developing fluid to the developing unit 200 is switched from the supply mechanism 600 to the supply mechanism 601.

[0145] This method allows for faster development of the developer fluid to the desired intensity.

[0146] <Another Example of Gas Discharged from Discharge Port 360d Toward the Peripheral Edge of the Backside of the Wafer W> FIG. 20 is a diagram for explaining an example of gas discharged from the discharge port 360d, and is a partially enlarged cross-sectional view that schematically shows the outline of the configuration of the peripheral edge portion of the heat plate 360. 20, a supply mechanism 700 for a cleaning fluid containing a weak acid gas, similar to the developing fluid, is connected to the discharge port 360d of the heat plate 360. Therefore, the cleaning fluid is discharged from the discharge port 360d. The supply mechanism 700 is configured similarly to the supply mechanism 500, for example, and differs from the supply mechanism 500 only in that the supply path 502 is connected to the outlet 360d instead of the shower head 330, and in that a cleaning fluid is generated and supplied instead of a developing fluid. Note that the supply mechanism 700 connected to the outlet 360d and the supply mechanism 500 connected to the shower head 330 may share some components such as the vaporizer 501.

[0147] In the configuration shown in FIG. 20 , in step S31 in Example 4 of the processing sequence, in addition to or instead of discharging the developing fluid as a cleaning fluid from the shower head 330, a cleaning fluid may be discharged from the outlet 360d. Furthermore, the discharge of the developing fluid as a cleaning fluid from the shower head 330 and the discharge of the cleaning fluid from the outlet 360d may be performed alternately. In this case, the discharge of the cleaning fluid from the outlet 360d may be performed first. Furthermore, when these are performed alternately, for example, the discharge of the cleaning fluid from the outlet 360d removes dirt from the fine structures at the top of the chamber 320. Meanwhile, the discharge of the developing fluid as a cleaning fluid from the shower head 330 cleans the periphery of the shower head 330 and the inner wall of the chamber 320.

[0148] <Example of Processing Sequence When Cleaning Fluid is Discharged from Discharge Port 360d> FIG. 21 is a flowchart showing main steps of an example of a processing sequence when cleaning fluid is discharged from the discharge port 360d. In this example, unlike the processing sequence example 1, after the development process using the developing fluid, a cleaning fluid is discharged from the discharge port 360d of the heating plate 360 ​​toward the back surface of the wafer W (step S41).

[0149] Specifically, in step S41, after the discharge of the developing fluid is stopped in step S8 and before the wafer W is unloaded from the chamber 320, a cleaning fluid is discharged from the discharge port 360d of the heat plate 360 ​​toward the peripheral backside edge of the wafer W. Also, at least one of the evacuation of the processing space K1 via the central exhaust path 340 and the evacuation of the processing space K1 via the peripheral exhaust path 350 continues. This exposes the peripheral backside edge of the wafer W to an acid atmosphere containing a weak acid gas. Development products adhering to the peripheral backside edge of the wafer W react with the weak acid gas to be broken down into smaller molecules, and then vaporize due to heat or the like. The vaporized material is discharged to the outside of the processing space K1 by evacuation of the processing space K1.

[0150] According to the processing sequence of this example, even if development products get around and adhere to the peripheral edge of the back surface of the wafer W during the development process using the development fluid, the development products can be removed by the cleaning fluid.

[0151] The cleaning fluid may be supplied so as to have a higher resist (specifically, metal-containing resist) removal capability than the developing fluid supplied during the development in steps S7 and S8. Specifically, at least one of the following may be satisfied: · The supply flow rate of the cleaning fluid is higher than that of the developing fluid. · The cleaning fluid is hotter than the developing fluid. The concentration of weak acid in the cleaning fluid is higher than that in the developing fluid. In the case of cleaning fluid, no weakly developing substance is added to the raw material mixture solution, while in the case of developing fluid, a weakly developing substance is added to the raw material mixture solution.

[0152] <Modification of Processing Sequence When Cleaning Fluid is Discharged from Discharge Port 360d> In the above example, the step of ejecting the cleaning fluid from the ejection port 360d of the heat plate 360 ​​toward the backside of the wafer W (step S41) is performed after the developing step using the developing fluid. Alternatively, the step of ejecting the cleaning fluid (step S41) may be performed later in the developing step using the developing fluid.

[0153] Specifically, in step S8, while the developing fluid is being discharged from the shower head 330, the discharge of the cleaning fluid from the discharge port 360d of the heating plate 360 ​​toward the back surface side of the wafer W may be started.

[0154] According to this modification, the time from the completion of the developing process using the developing fluid to the completion of removal of development products from the peripheral back surface of the wafer W (i.e., cleaning of the peripheral back surface of the wafer W) can be shortened.

[0155] <Other examples of vaporizers> FIG. 22 is a vertical cross-sectional view for explaining another example of the vaporizer. The vaporizer 501A in FIG. 22 has a chamber 800 that collectively defines a mixing space K11, which will be described later, and a discharge preparation space K12 that is horizontally adjacent to the mixing space K11.

[0156] A nozzle 811 serving as a discharge unit for discharging the developing liquid is provided on a ceiling wall 801 of the chamber 800. A supply path 812 extending from the nozzle 811 is formed inside the ceiling wall 801. A supply mechanism 814 for the developing liquid is connected to the supply path 812 via a supply pipe 813. Although not shown, the supply mechanism 814 has a group of supply devices including, for example, a supply source of the developing liquid, and an on-off valve and a flow rate adjustment valve for controlling the flow of the developing liquid. This group of supply devices is controlled by the control unit 100. The amount of developing liquid ejected from the nozzle 811 at one time corresponds to one development using the developing fluid, and is small, at only a few ml.

[0157] Furthermore, a shower plate 821 having a plurality of outlets 822 formed therein is provided on the ceiling wall 801. The outlets 822 discharge an inert gas as a carrier gas into a mixing space K11 between the shower plate 821 and a diffusion section 831 described below. The nozzle 811 described above is attached to the shower plate 821 so as to extend downward from the center of the lower surface of the shower plate 821, for example.

[0158] Also, within the ceiling wall 801, there are formed a diffusion space K21 communicating with the plurality of outlets 822, and a supply path 823 extending from the diffusion space K21. An inert gas supply mechanism 825 is connected to the supply path 823 via a supply path 824. Although not shown, the supply mechanism 825 has a group of supply devices including, for example, an inert gas supply source, and an on-off valve and a flow rate adjustment valve for controlling the flow of the inert gas. This group of supply devices is controlled by the control unit 100.

[0159] The surface of the bottom wall 802 of the chamber 800 facing the shower plate 821 constitutes a diffusion section 831 .

[0160] The diffusion portion 831 receives a small amount of developing liquid ejected from the nozzle 811 and spreads the developing fluid horizontally. The diffusion portion 831 spreads the developing fluid horizontally, for example, by capillary action. For example, by using a member having a continuous series of microstructures in the portion of the bottom wall 802 corresponding to the diffusion portion 831, the developing fluid can be spread horizontally in the diffusion portion 831 by capillary action. Furthermore, the surface of the diffusion portion 831 may be modified by plasma treatment, hydrophilic coating, or the like to promote the diffusion of the developing liquid.

[0161] A partition wall 832 is provided on the bottom wall 802 of the chamber 800. The partition wall 832, the diffusion portion 831, and the side wall 803 of the chamber 800 form a storage space that stores the developing liquid discharged from the nozzle 811. The partition wall 832 separates the storage space from a leakage receiving space on the bottom wall 802 of the chamber 800. The leakage receiving space receives the developing liquid that cannot be contained in the storage space and leaks out. Although not shown, a drain pipe may be provided to discharge the developing liquid in the leakage receiving space to the outside. The drain pipe extends from inside the leakage receiving space and is attached to the top wall 801, for example.

[0162] Furthermore, a heater 840 is provided within the bottom wall 802 of the chamber 800 for heating the developing liquid received by the diffusion portion 831 and contained in the containing space.

[0163] Furthermore, a discharge port 850 is provided in a portion of the ceiling wall 801 of the chamber 800 that is located above the discharge preparation space K12 adjacent to the mixing space K11. The discharge port 850 is connected to the supply path 502.

[0164] In the vaporizer 501A, the developing liquid discharged from the nozzle 811 and diffused in the diffusing section 831 is heated and vaporized by the heater 840. The vaporized developing liquid is mixed with the inert gas discharged from the discharge port 822 in the mixing space K11. The mixed gas of the vaporized developing liquid and the inert gas is supplied as a developing fluid to the developing unit 200 via the discharge preparation space K12, the discharge port 850, and the supply path 502.

[0165] <Modification> In the above example, the inert gas is discharged onto the rear surface of the wafer W from the discharge port 360d provided separately from the through-holes 372 through which the lift pins 370 are inserted. Alternatively, or in addition, the inert gas may be discharged onto the rear surface of the wafer W from the through-holes 372.

[0166] In the above examples, a fluid containing a weak acid gas is used as the developing fluid, but instead, a fluid containing a weak acid mist may be used, or a fluid containing both a weak acid gas and a weak acid mist may be used. In other words, the developing fluid according to the present disclosure is a fluid containing at least one of a weak acid gas and a weak acid mist. Similarly, in the above examples, a fluid containing a weak acid gas was used as the cleaning fluid, but instead, a fluid containing a weak acid mist may be used, or a fluid containing both a weak acid gas and a weak acid mist may be used.

[0167] In the above example, the distance between the wafer W and the main body 360a of the heating plate 360 ​​is adjusted by adjusting the lift pins 370 that support the wafer W. Alternatively, the height of the protrusions 360c of the heating plate 360 ​​may be configured to be changeable, and the distance may be adjusted by adjusting the height of the protrusions 360c that support the wafer W.

[0168] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0169] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0170] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) A developing apparatus for developing a substrate on which a resist film has been formed and which has been subjected to an exposure process, a developing fluid generating section that generates a developing fluid containing at least one of a weak acid gas and a mist from a developing liquid; a developing unit that forms a processing space that accommodates the substrate, has a chamber that is provided with a discharge port that discharges the developing fluid into the processing space, and develops the substrate with the developing fluid; The developing unit The developing fluid is discharged from the discharge port toward the front surface side of the substrate in the processing space; a developing device having another outlet for discharging a predetermined gas toward the rear surface side of the substrate within the processing space; (2) The developing device according to (1), wherein the developing section further includes a heating section that heats the predetermined gas. (3) The developing unit is a high-temperature supply path that supplies the predetermined gas heated by the heating unit to the other discharge ports; The developing device described in (2) above further comprises a low-temperature supply path that is provided separately from the high-temperature supply path and that supplies the specified gas, which is at a lower temperature than the specified gas supplied from the high-temperature supply path, to the other discharge ports. (4) the developing unit further includes a support plate that supports the substrate in the processing space; the support plate has an annular groove in a plan view on its upper surface, The developing device according to any one of (1) to (3), wherein a plurality of the other discharge ports are formed along the groove at the bottom of the groove. (5) A supply mechanism including the developing fluid generating unit supplies the developing fluid to the developing unit, The developing device according to any one of (1) to (4), wherein at least a part of the supply mechanism is provided adjacent to the developing unit. (6) A plurality of supply mechanisms including the developing fluid generating unit are provided, 4. The developing device according to claim 1, wherein the plurality of supply mechanisms supply the developing fluid to the developing section so that development with the developing fluid differs from one another. (7) The developing device according to any one of (1) to (6), further comprising a control unit that controls the supply of a cleaning fluid containing at least one of a weak acid gas and a mist into the processing space when the substrate is not positioned within the processing space. (8) The developing device according to any one of (1) to (7), further comprising a correction unit that corrects processing conditions for development by the developing unit based on the inspection results of the substrate after development by the developing unit, the state of the substrate or the developing unit at the time of development by the developing unit, the inspection results of the substrate after a post-process performed on the substrate after development by the developing unit, or the state of the substrate or a post-processing unit at the time of the post-processing. (9) A developing method for developing a substrate on which a resist film has been formed and which has been subjected to an exposure process, comprising the steps of: The method includes a step of supplying a developing fluid, which is generated from a developing liquid and contains at least one of a weak acid gas and a mist, into a processing space, and developing the substrate in the processing space; A developing method, wherein the developing step includes a step of discharging a predetermined gas toward a back surface side of the substrate in the processing space while discharging the developing fluid toward a front surface side of the substrate in the processing space. [Explanation of symbols]

[0171] 1. Wafer Processing System 200 Development Unit 320 Chamber 331 Discharge port 360d outlet 501, 501A Vaporizer K1 Processing Space W wafer

Claims

1. A developing apparatus for developing a substrate on which a resist film has been formed and which has been subjected to an exposure process, a developing fluid generating section that generates a developing fluid containing at least one of a weak acid gas and a mist from a developing liquid; a developing unit that forms a processing space that accommodates the substrate, has a chamber that is provided with a discharge port that discharges the developing fluid into the processing space, and develops the substrate with the developing fluid; The developing unit The developing fluid is discharged from the discharge port toward the front surface side of the substrate in the processing space; a developing device having another outlet for discharging a predetermined gas toward the rear surface side of the substrate within the processing space;

2. 2. The developing device according to claim 1, wherein said developing section further comprises a heating section for heating said predetermined gas.

3. The developing unit a high-temperature supply path that supplies the predetermined gas heated by the heating unit to the other discharge ports; 3. The developing device according to claim 2, further comprising: a low-temperature supply path provided separately from said high-temperature supply path, for supplying said predetermined gas, which is at a temperature lower than said predetermined gas supplied from said high-temperature supply path, to said other discharge ports.

4. the developing unit further includes a support plate that supports the substrate within the processing space; the support plate has an annular groove in a plan view on its upper surface, 4. The developing device according to claim 1, wherein a plurality of the other discharge ports are formed along the groove at the bottom of the groove.

5. a supply mechanism including the developing fluid generating section that supplies the developing fluid to the developing section; 4. The developing device according to claim 1, wherein at least a part of said supply mechanism is provided adjacent to said developing section.

6. a plurality of supply mechanisms each including the developing fluid generating unit; 4. The developing device according to claim 1, wherein the plurality of supply mechanisms supply the developing fluid to the developing section so that developments with the developing fluid are different from each other.

7. The developing device according to any one of claims 1 to 3, further comprising a control unit that controls the supply of a cleaning fluid containing at least one of a weak acid gas and a mist into the processing space when the substrate is not positioned within the processing space.

8. The developing device according to any one of claims 1 to 3, further comprising a correction unit that corrects processing conditions for development by the developing unit based on the inspection results of the substrate after development by the developing unit, the state of the substrate or the developing unit at the time of development by the developing unit, the inspection results of the substrate after a post-process performed on the substrate after development by the developing unit, or the state of the substrate or a post-processing unit at the time of the post-processing.

9. A developing method for developing a substrate on which a resist film has been formed and which has been subjected to an exposure process, comprising the steps of: The method includes a step of supplying a developing fluid, which is generated from a developing liquid and contains at least one of a weak acid gas and a mist, into a processing space, and developing the substrate in the processing space; A developing method, wherein the developing step includes a step of discharging a predetermined gas toward a back surface side of the substrate in the processing space while discharging the developing fluid toward a front surface side of the substrate in the processing space.

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