Sensing element with integrated detector array
The integrated detector array with VCSELs and photodetectors in 3D sensing technologies addresses complexity and cost issues, enabling efficient 3D imaging with reduced parallax and improved object detection capabilities.
Patent Information
- Application Number
- JP2025119236
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-07-17
- Filing Date
- 2025-07-15
- Publication Date
- 2026-01-29
AI Technical Summary
Existing 3D sensing technologies face challenges such as complexity, high cost, and parallax issues due to decoupled emitters and detectors, and limited capability in determining object size and shape using self-mixing interferometry (SMI) with vertical-cavity surface-emitting lasers (VCSELs).
An integrated detector array with VCSELs, each comprising an emitter and a photodetector, generates self-mixing interferometric (SMI) signals, allowing for simultaneous detection of distance, velocity, size, and shape of objects by integrating photodetectors within the VCSELs, reducing size and complexity.
The integrated detector array enables efficient 3D sensing with reduced parallax, lower cost, and enhanced capability to determine object size and shape, suitable for mobile devices by integrating photodetectors within emitters, thus improving 3D imaging.
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Figure 2026015280000001_ABST
Abstract
Description
[Technical Field]
[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Provisional Patent Application No. 63 / 672,475, filed July 17, 2024, the disclosure of which is incorporated herein by reference in its entirety.
[0002] The present disclosure relates generally to sensing elements, and in some non-limiting embodiments or aspects, to sensing elements having at least one integrated detector array. [Background technology]
[0003] Three-dimensional (3D) sensing applications rely on determining the distance and direction (e.g., angular orientation) of an object. For example, time-of-flight (TOF) uses a high-speed detector to determine distance by measuring the time between emitting a signal and receiving a return signal (e.g., a reflected signal) at the source. Dot projectors rely on distorting and decoupling a known pattern on an object's surface using a (relatively slow) two-dimensional (2D) camera. The combination of TOF and dot projectors requires a complex and expensive high-speed 3D camera system. Furthermore, decoupling the detector and / or camera from the emitter increases their size. Furthermore, when the detector and / or camera are decoupled from the emitter, the return signal is not received at the same location where it was emitted, resulting in parallax.
[0004] Self-mixing interferometry (SMI) combines a vertical-cavity surface-emitting laser (VCSEL) with a photodetector inside the VCSEL's cavity. The return signal interferes with the VCSEL's internal modes, creating changes in the power, threshold current, and / or operating voltage of such a device, allowing for the detection of object distance and velocity, but not the object's size or shape. Therefore, its usefulness for 3D sensing is limited. Summary of the Invention [Problem to be solved by the invention]
[0005] [Means for solving the problem]
[0006] Accordingly, there is provided an improved sensing element having at least one integrated detector array, a method of using such a sensing element, and a system including such a sensing element.
[0007] According to a non-limiting embodiment or aspect, a sensing element having at least one integrated detector array is provided. An exemplary sensing element can include a plurality of vertical-cavity surface-emitting lasers (VCSELs). Each VCSEL of the plurality of VCSELs can include an emitter and a photodetector. Each VCSEL of the plurality of VCSELs can be configured to generate a self-mixing interferometric (SMI) signal.
[0008] In certain non-limiting embodiments or aspects, an emitter of each VCSEL of the plurality of VCSELs can be configured to emit an emitted signal, each VCSEL of the plurality of VCSELs can be configured to receive a reflected signal based on the emitted signal, and a photodetector of each VCSEL of the plurality of VCSELs can be configured to generate an SMI signal based on at least one of the emitted signal, the reflected signal, or any combination thereof.
[0009] In some non-limiting embodiments or aspects, the reflected signal can interfere with the emitted signal to cause modulation, and the SMI signal can be based on the modulation.
[0010] In some non-limiting embodiments or aspects, the modulation may include at least one of amplitude modulation, frequency modulation, or any combination thereof.
[0011] In some non-limiting embodiments or aspects, multiple VCSELs can be arranged in an array.
[0012] In some non-limiting embodiments or aspects, each VCSEL of the plurality of VCSELs may be individually addressable.
[0013] In some non-limiting embodiments or aspects, the emitters of each VCSEL of the plurality of VCSELs can be turned on and off in a predetermined sequence to provide individual emission beams separated by the angle of emission.
[0014] In certain non-limiting embodiments or aspects, the emitter of at least one VCSEL of the plurality of VCSELs can be configured to emit through a top surface of the sensing element.
[0015] In certain non-limiting embodiments or aspects, the emitter of at least one VCSEL of the plurality of VCSELs can be configured to emit through a bottom surface of the sensing element.
[0016] In certain non-limiting embodiments or aspects, the emitter of the at least one VCSEL can be configured to emit through a substrate at the bottom surface of the sensing element.
[0017] In some non-limiting embodiments or aspects, each photodetector may include at least one of a photodiode, a PIN photodiode, or any combination thereof.
[0018] In some non-limiting embodiments or aspects, the emitter of each VCSEL of the plurality of VCSELs is connected to a respective cathode and a respective anode.
[0019] In some non-limiting embodiments or aspects, the photodetector of each VCSEL of the plurality of VCSELs can be connected to a respective cathode and a respective anode.
[0020] In some non-limiting embodiments or aspects, the photodetector of at least one VCSEL of the plurality of VCSELs can share at least one of the respective cathode or the respective anode with the emitter of at least one VCSEL.
[0021] In certain non-limiting embodiments or aspects, the at least one optical element can be configured to at least one of steer an emission signal from an emitter of at least one VCSEL of the plurality of VCSELs, polarize an emission signal from an emitter of at least one VCSEL of the plurality of VCSELs, or any combination thereof.
[0022] In certain non-limiting embodiments or aspects, the at least one optical element can include at least one grating configured to polarize an emission signal from an emitter of at least one VCSEL of the plurality of VCSELs.
[0023] In some non-limiting embodiments or aspects, each of the at least one grating can be configured to polarize the emitted signal in one direction.
[0024] In some non-limiting embodiments or aspects, each of the at least one grating can be configured to polarize the emitted signal in one of two orthogonal directions.
[0025] In some non-limiting embodiments or aspects, the emitter of at least one VCSEL of the plurality of VCSELs can be configured to emit through a bottom surface of the sensing element, and the at least one grating can be formed on an epitaxial side of the quantum well opposite the substrate of the sensing element.
[0026] In certain non-limiting embodiments or aspects, the at least one optical element can include at least one collimating element for each emitter of each VCSEL of the plurality of VCSELs.
[0027] In some non-limiting embodiments or aspects, an emitter of at least one VCSEL of the plurality of VCSELs can be configured to emit through a bottom surface of the sensing element, and at least one collimating element can be formed in a substrate of the sensing element.
[0028] In certain non-limiting embodiments or aspects, the at least one collimating element can be configured to direct an emission signal from an emitter of each VCSEL of the plurality of VCSELs in a respective angular offset direction relative to a normal to a surface of the sensing element.
[0029] In some non-limiting embodiments or aspects, the at least one collimating element can include at least one of a collimating lens, a meta-optic element, or any combination thereof.
[0030] In some non-limiting embodiments or aspects, the at least one collimating element can include a portion of a hybrid lens array attached to the sensing element.
[0031] In some non-limiting embodiments or aspects, the sensing element may be at least partially formed by at least one of a semiconductor wafer, an integrated circuit chip, or any combination thereof, and the at least one collimating element may be attached to the plurality of VCSELs at the wafer level or at the chip level.
[0032] In certain non-limiting embodiments or aspects, the circuitry may be configured to separate the SMI signals of each VCSEL of the plurality of VCSELs by at least one of a direction, a distance, a polarization, a velocity, or any combination thereof, of at least one object in a respective direction of the emission signal from the emitter of each VCSEL of the plurality of VCSELs.
[0033] In certain non-limiting embodiments or aspects, the sensing element is at least partially formed by at least one of a semiconductor wafer, an integrated circuit chip, or any combination thereof.
[0034] According to a non-limiting embodiment or aspect, a method is provided for using a sensing element including a plurality of VCSELs, each including an emitter and a photodetector. An example method can include emitting an emission signal (e.g., by an emitter of each VCSEL of the plurality of VCSELs), receiving a reflected signal based on the emitted signal (e.g., by each VCSEL of the plurality of VCSELs), and / or generating an SMI signal for each VCSEL of the plurality of VCSELs based on at least one of the emitted signal, the reflected signal, or any combination thereof (e.g., by a photodetector of each VCSEL of the plurality of VCSELs).
[0035] In some non-limiting embodiments or aspects, the reflected signal can interfere with the emitted signal to cause modulation, and the SMI signal can be based on the modulation.
[0036] In some non-limiting embodiments or aspects, the modulation may include at least one of amplitude modulation, frequency modulation, or any combination thereof.
[0037] In some non-limiting embodiments or aspects, each VCSEL of the plurality of VCSELs may be individually addressable, and the emitters of each VCSEL of the plurality of VCSELs may be turned on and off in a predetermined sequence to provide individual emission beams separated by the angle of emission.
[0038] In some non-limiting embodiments or aspects, an emitted signal from an emitter of at least one VCSEL of the plurality of VCSELs can be steered by at least one collimating element.
[0039] In some non-limiting embodiments or aspects, the at least one grating can polarize an emission signal from an emitter of at least one VCSEL of the plurality of VCSELs.
[0040] In certain non-limiting embodiments or aspects, the SMI signals of each VCSEL of the plurality of VCSELs may be separated by at least one of a direction, a distance, a polarization, a velocity, or any combination thereof, of at least one object in a respective direction of the emission signal from the emitter of each VCSEL of the plurality of VCSELs.
[0041] In some non-limiting embodiments or aspects, multiple three-dimensional points may be generated based on SMI signals from multiple VCSELs.
[0042] In some non-limiting embodiments or aspects, a three-dimensional image may be generated based on a plurality of three-dimensional points.
[0043] According to a non-limiting embodiment or aspect, a system is provided. An exemplary system may include a computing device and a sensing element connected to the computing device. The sensing element may be as described herein. For example, the sensing element may include a plurality of VCSELs, each VCSEL of the plurality of VCSELs including an emitter and a photodetector. Each VCSEL of the plurality of VCSELs may be configured to generate an SMI signal.
[0044] In some non-limiting embodiments or aspects, the computing device may include at least one of a smartphone, a tablet computer, a laptop computer, a desktop computer, a wearable computing device, or any combination thereof.
[0045] In some non-limiting embodiments or aspects, the computing device can include a display and the sensing element is behind the display.
[0046] In some non-limiting embodiments or aspects, at least one aperture can be defined in the display in front of the sensing element.
[0047] Further non-limiting embodiments or aspects are described in the following numbered clauses.
[0048] Clause 1: A sensing element having at least one integrated detector array, the sensing element including a plurality of vertical cavity surface emitting lasers (VCSELs), each VCSEL of the plurality of VCSELs including an emitter and a photodetector, and each VCSEL of the plurality of VCSELs configured to generate a self-mixing interferometric (SMI) signal.
[0049] Clause 2: The sensing element of clause 1, wherein an emitter of each VCSEL of the plurality of VCSELs is configured to emit an emission signal, each VCSEL of the plurality of VCSELs is configured to receive a reflected signal based on the emitted signal, and a photodetector of each VCSEL of the plurality of VCSELs is configured to generate an SMI signal based on at least one of the emitted signal, the reflected signal, or any combination thereof.
[0050] Clause 3: 3. The sensing element of clause 1 or 2, wherein the reflected signal interferes with the emitted signal to cause modulation, and the SMI signal is based on the modulation.
[0051] Clause 4: 4. The sensing element of any of clauses 1-3, wherein the modulation comprises at least one of amplitude modulation, frequency modulation, or any combination thereof.
[0052] Article 5: 5. The sensing element of any one of clauses 1 to 4, wherein a plurality of VCSELs are arranged in an array.
[0053] Article 6: 6. The sensing element of any of clauses 1-5, wherein each VCSEL of the plurality of VCSELs is individually addressable.
[0054] Article 7: 7. The sensing element of any of clauses 1-6, wherein the emitters of each VCSEL of the plurality of VCSELs are turned on and off in a predetermined sequence to provide individual emission beams separated by the angle of emission.
[0055] Article 8: 8. The sensing element of any of clauses 1-7, wherein an emitter of at least one VCSEL of the plurality of VCSELs is configured to emit through a top surface of the sensing element.
[0056] Article 9: 9. The sensing element of any of clauses 1-8, wherein an emitter of at least one VCSEL of the plurality of VCSELs is configured to emit through a bottom surface of the sensing element.
[0057] Article 10: 10. The sensing element of any of clauses 1-9, wherein the emitter of the at least one VCSEL is configured to emit through a substrate at a bottom surface of the sensing element.
[0058] Article 11: 11. The sensing element of any of clauses 1-10, wherein each photodetector comprises at least one of a photodiode, a PIN photodiode, or any combination thereof.
[0059] Article 12: 12. The sensing element of any of clauses 1-11, wherein an emitter of each VCSEL of the plurality of VCSELs is connected to a respective cathode and a respective anode.
[0060] Article 13: 13. The sensing element of any of clauses 1-12, wherein a photodetector of each VCSEL of the plurality of VCSELs is connected to a respective cathode and a respective anode.
[0061] Article 14: 14. The sensing element of any of clauses 1-13, wherein the photodetector of at least one VCSEL of the plurality of VCSELs shares at least one of the respective cathode or the respective anode with the emitter of the at least one VCSEL.
[0062] Article 15: 15. The sensing element of any of clauses 1-14, further comprising at least one optical element configured to at least one of: steering an emission signal from an emitter of at least one VCSEL of the plurality of VCSELs; polarizing an emission signal from an emitter of at least one VCSEL of the plurality of VCSELs; or any combination thereof.
[0063] Article 16: 16. The sensing element of any of clauses 1-15, wherein the at least one optical element includes at least one grating configured to polarize an emission signal from an emitter of at least one VCSEL of the plurality of VCSELs.
[0064] Article 17: 17. A sensing element according to any of clauses 1 to 16, wherein each of the at least one grating is configured to polarise the emitted signal in one direction.
[0065] Article 18: 18. A sensing element according to any of clauses 1 to 17, wherein each of the at least one grating is configured to polarise the emitted signal in one of two orthogonal directions.
[0066] Article 19: 19. The sensing element of any of clauses 1-18, wherein the emitter of at least one VCSEL of the plurality of VCSELs is configured to emit through a bottom surface of the sensing element, and wherein at least one grating is formed on an epitaxial side of the quantum well opposite the substrate of the sensing element.
[0067] Article 20: 20. The sensing element of any of clauses 1-19, wherein the at least one optical element comprises at least one collimating element for each emitter of each VCSEL of the plurality of VCSELs.
[0068] Article 21: 21. A sensing element as described in any one of clauses 1 to 20, wherein an emitter of at least one VCSEL of the plurality of VCSELs is configured to emit through a bottom surface of the sensing element, and at least one collimating element is formed in a substrate of the sensing element.
[0069] Article 22: 22. The sensing element of any of clauses 1 to 21, wherein at least one collimating element is configured to direct an emission signal from an emitter of each VCSEL of the plurality of VCSELs in a respective angular offset direction relative to a normal to a surface of the sensing element.
[0070] Article 23: 23. The sensing element of any of clauses 1-22, wherein the at least one collimating element comprises at least one of a collimating lens, a meta-optical element, or any combination thereof.
[0071] Article 24: 24. The sensing element of any of clauses 1-23, wherein at least one collimating element comprises part of a hybrid lens array attached to the sensing element.
[0072] Article 25: A sensing element described in any of clauses 1 to 24, wherein the sensing element is at least partially formed by at least one of a semiconductor wafer, an integrated circuit chip, or any combination thereof, and at least one collimating element is attached to the plurality of VCSELs at the wafer level or chip level.
[0073] Article 26: 26. The sensing element of any of clauses 1-25, further comprising circuitry configured to separate the SMI signal of each VCSEL of the plurality of VCSELs by at least one of direction, distance, polarization, velocity, or any combination thereof, of at least one object in a respective direction of an emission signal from an emitter of each VCSEL of the plurality of VCSELs.
[0074] Article 27: 27. The sensing element of any of clauses 1-26, wherein the sensing element is at least partially formed by at least one of a semiconductor wafer, an integrated circuit chip, or any combination thereof.
[0075] Article 28: 1. A method for using a sensing element including a plurality of vertical cavity surface emitting lasers (VCSELs), each VCSEL including an emitter and a photodetector, the method including: emitting, by the emitter of each VCSEL of the plurality of VCSELs, an emission signal; receiving, by each VCSEL of the plurality of VCSELs, a reflected signal based on the emitted signal; and generating, by the photodetector of each VCSEL of the plurality of VCSELs, a self-mixing interferometry (SMI) signal for each VCSEL of the plurality of VCSELs based on at least one of the emitted signal, the reflected signal, or any combination thereof.
[0076] Article 29: 29. The method of clause 28, wherein the reflected signal interferes with the emitted signal to cause a modulation, and the SMI signal is based on this modulation.
[0077] Article 30: 30. The method of claim 28 or 29, wherein the modulation comprises at least one of amplitude modulation, frequency modulation, or any combination thereof.
[0078] Article 31: 31. The method of any one of clauses 28-30, wherein each VCSEL of the plurality of VCSELs is individually addressable, and the emitters of each VCSEL of the plurality of VCSELs are turned on and off in a predetermined sequence to provide individual emission beams separated by an angle of emission.
[0079] Article 32: 32. The method of any one of clauses 28-31, further comprising steering an emission signal from an emitter of at least one VCSEL of the plurality of VCSELs with at least one collimating element.
[0080] Article 33: 33. The method of any one of clauses 28-32, further comprising polarizing an emission signal from an emitter of at least one VCSEL of the plurality of VCSELs with at least one grating.
[0081] Article 34: 34. The method of any one of clauses 28-33, further comprising separating the SMI signal of each VCSEL of the plurality of VCSELs by at least one of direction, distance, polarization, velocity, or any combination thereof, of at least one object in a respective direction of an emission signal from an emitter of each VCSEL of the plurality of VCSELs.
[0082] Article 35: 35. The method of any one of clauses 28-34, further comprising generating a plurality of three-dimensional points based on SMI signals from a plurality of VCSELs.
[0083] Article 36: 36. The method of any one of clauses 28 to 35, further comprising generating a three-dimensional image based on the plurality of three-dimensional points.
[0084] Article 37: 1. A system including: a computing device; and a sensing element connected to the computing device, the sensing element including a plurality of vertical cavity surface emitting lasers (VCSELs), each VCSEL of the plurality of VCSELs including an emitter and a photodetector, each VCSEL of the plurality of VCSELs configured to generate a self-mixing interferometric (SMI) signal.
[0085] Article 38: 38. The system of claim 37, wherein the computing device comprises at least one of a smartphone, a tablet computer, a laptop computer, a desktop computer, a wearable computing device, or any combination thereof.
[0086] Article 39: 39. The system of clause 37 or clause 38, wherein the computing device includes a display and the sensing element is behind the display.
[0087] Article 40: 40. A system according to any one of clauses 37 to 39, wherein at least one aperture is defined in the display in front of the sensing element.
[0088] These and other features and characteristics of the present disclosure, as well as the method of operation and function of the associated elements of construction, combination of parts and economies of manufacture, will become more apparent from a consideration of the following description and the appended claims, with reference to the accompanying drawings, all of which form a part of this specification and in which like reference numerals indicate corresponding parts in the various views. It is to be expressly understood, however, that the drawings are for the purpose of illustration and description only and are not intended as a definition of the limits of the disclosed subject matter.
[0089] Further advantages and details are explained in more detail below with reference to non-limiting exemplary embodiments shown in the accompanying schematic drawings. [Brief explanation of the drawings]
[0090] [Figure 1A] FIG. 1A is a schematic diagram of a sensing element having at least one integrated detector array, according to some non-limiting embodiments or aspects. [Figure 1B] FIG. 1B is a schematic diagram of a sensing element having at least one integrated detector array, according to some non-limiting embodiments or aspects. [Figure 1C] FIG. 1C is a schematic diagram of a sensing element having at least one integrated detector array, according to some non-limiting embodiments or aspects. [Figure 2] FIG. 2 is a flow diagram of a method for using a sensing element having at least one integrated detector array, according to some non-limiting embodiments or aspects. [Figure 3] FIG. 3 is a schematic diagram of a system including a sensing element with at least one integrated detector array, according to some non-limiting embodiments or aspects. [Figure 4] FIG. 4 is a schematic diagram of example components of a computing device according to some non-limiting embodiments or aspects. DETAILED DESCRIPTION OF THE INVENTION
[0091] For purposes of the following description, the terms "end," "top," "bottom," "right," "left," "vertical," "horizontal," "top," "bottom," "lateral," "longitudinal," and their derivatives shall refer to the orientation of the embodiments in the drawings. However, it should be understood that the present disclosure can contemplate various alternative modifications and step sequences unless expressly specified otherwise. It should also be understood that the specific devices and processes illustrated in the accompanying drawings and described in the following specification are merely exemplary, non-limiting embodiments or aspects of the disclosed subject matter. Hence, specific dimensions and other physical characteristics related to the embodiments or aspects disclosed herein are not to be considered limiting.
[0092] Some non-limiting embodiments or aspects are described herein in relation to thresholds. As used herein, meeting a threshold can refer to a value being greater than the threshold, more than the threshold, higher than the threshold, greater than or equal to the threshold, less than the threshold, less than the threshold, lower than the threshold, less than or equal to the threshold, equal to the threshold, etc.
[0093] As used herein, aspects, components, elements, structures, acts, steps, functions, instructions, and the like should not be construed as critical or essential unless expressly stated as such. Furthermore, as used herein, the articles "a" and "an" are intended to include one or more items and can be used interchangeably with "one or more" and "at least one." Furthermore, as used herein, the term "set" is intended to include one or more items (e.g., related items, unrelated items, combinations of related and unrelated items, etc.) and can be used interchangeably with "one or more" and "at least one." Where only one item is intended, the term "one" or similar language is used. Furthermore, as used herein, terms such as "has," "have," "having," and the like are intended to be open-ended terms. Furthermore, the phrase "based on" is intended to mean "based at least in part on," unless otherwise specified. Additionally, a reference to an action being "based on" a condition can refer to the action being "responsive to" the condition. For example, the phrases "based on" and "responsive to" can refer to a condition for automatically triggering an action (e.g., a particular operation of an electronic device such as a computing device, processor, etc.) in some non-limiting embodiments or aspects.
[0094] As used herein, the term “communication” can refer to the reception, receipt, transmission, transfer, provision, etc. of data (e.g., information, signals, messages, instructions, commands, etc.). For one unit (e.g., a device, a system, a component of a device or system, a combination thereof, etc.) to communicate with another unit means that the unit directly or indirectly receives information from the other unit and / or directly or indirectly transmits information to the other unit. This can refer to direct or indirect connections (e.g., direct communication connections, indirect communication connections, etc.) that are wired and / or wireless in nature. Furthermore, two units can communicate with each other even though the transmitted information may be modified, processed, relayed, and / or routed between the first and second units. For example, a first unit can communicate with a second unit even though the first unit passively receives information and does not actively transmit information to the second unit. As another example, a first unit may communicate with a second unit if at least one intermediate unit processes information received from the first unit and communicates the processed information to the second unit. In some non-limiting embodiments or aspects, a message may refer to a network packet containing data (e.g., a data packet, etc.). It will be recognized that numerous other configurations are possible.
[0095] As used herein, the term "computing device" may refer to one or more electronic devices configured to process data. A computing device, in some examples, may include the necessary components for receiving, processing, and outputting data, such as a processor, a display, a memory, input devices, a network interface, and the like. A computing device may be a mobile device. By way of example, a mobile device may include a cell phone (e.g., a smartphone or a standard cell phone), a tablet computer, a portable computer, a wearable device (e.g., a watch, eyeglasses, lenses, clothing, and the like), a personal digital assistant (PDA), and / or other similar devices. A computing device may also be a desktop computer or other form of non-mobile computer.
[0096] As used herein, the term "system" can refer to one or more computing devices or combinations of computing devices (e.g., processors, servers, client devices, components of the like, etc.). As used herein, references to a "device," "processor," etc. can refer to a previously described device or processor, a different device or processor, and / or a combination of devices and / or processors described as performing a previous step or function. For example, as used herein and in the claims, a first device or first processor described as performing a first step or first function can refer to the same or a different device or processor described as performing a second step or second function.
[0097] Non-limiting embodiments or aspects of the presently disclosed subject matter are directed to sensing elements having at least one integrated detector array, methods of using such sensing elements, and systems including such sensing elements. For example, the sensing element can include a plurality (e.g., an array) of vertical-cavity surface-emitting lasers (VCSELs). Each VCSEL can include an emitter (e.g., a laser cavity) and a photodetector (e.g., a photodiode integrated into the laser cavity). Each VCSEL can be configured to generate a self-mixing interferometric (SMI) signal. In this manner, a detector array separate from the emitter is not required. Instead, each emitter (e.g., a laser cavity) can have a corresponding photodetector (e.g., a photodiode), thereby reducing the overall dimensions of the sensing element. These reduced dimensions (e.g., reduced size) can be useful for mobile devices (e.g., smartphones, tablet computers, wearable computing devices, etc.) because, for example, the size of the aperture in front of the display can be reduced. Additionally, integrating a photodetector into the emitter ensures that the reflected signal is received at the same location where the signal was emitted, thereby reducing (e.g., eliminating) parallax. Furthermore, integrating a photodetector into the emitter reduces complexity and expense compared to other detection techniques (e.g., high-speed 3D camera systems, etc.). Additionally, having an array of multiple detectors integrated into the emitter allows for detection of not only the distance and velocity of an object, but also the size and / or shape of the object. Furthermore, having a two-dimensional (2D) array of individually addressable VCSEL emitters, for example, with a photodiode integrated into each VCSEL resonator, allows each emitter to be operated independently, thereby enabling determination of the angular direction of emission (e.g., when optical elements are used to steer the emitted signal from the emitter and / or receive the corresponding reflected signal at a different angle). When the returning light is captured by the VCSEL, the distance of the reflecting point (e.g., an object) can be determined based on the SMI signal (e.g., its amplitude and / or frequency modulation).Additionally, signals (e.g., light) may be emitted in a sequence from the emitters of the array, thereby enabling the determination of multiple points (e.g., three-dimensional (3D) points), which can be used to generate a 3D image.
[0098] 1A-1C, a sensing element 100 having at least one integrated detector array is shown according to some non-limiting embodiments or aspects. In some non-limiting embodiments or aspects, the sensing element 100 may include multiple emitters, such as vertical cavity surface-emitting lasers (VCSELs) 128. Each emitter (e.g., each VCSEL 128) may include a photodetector (e.g., a photodiode 108). Each emitter (e.g., each VCSEL 128) may be configured to generate a self-mixing interferometric (SMI) signal, as described herein. In some non-limiting embodiments or aspects, at least some of the emitters (e.g., the VCSELs 128) (e.g., a subset of the emitters, all of the emitters, etc.) may share a photodetector. For example, a first subset of the emitters may share a first photodetector, a second subset of the emitters may share a second photodetector, etc.
[0099] 1A and 1B show two VCSELs 128, it will be understood that any number of VCSELs 128 may be included in the sensing element 100. In some non-limiting embodiments or aspects, the VCSELs 128 may be arranged in an array (e.g., a 2D array), as shown in FIG.
[0100] 1A-1C , in some non-limiting embodiments or aspects, each VCSEL 128 may include a substrate layer 102, at least one (e.g., multiple) distributed Bragg reflector (DBR) layer 104, an active region 106 (e.g., having quantum wells (QWs)), and a photodiode 108 (e.g., at least one photodiode layer). In some non-limiting embodiments or aspects, each VCSEL 128 and / or at least one layer thereof (e.g., photodiode 108) may include and / or be connected to at least one electrical connection, such as electrodes 112, 114, and 116. For example, as shown in FIGS. 1A and 1B , each VCSEL 128 may include a first electrode 112 and a second electrode 114, and the photodiode 108 may be connected to the first electrode 112 and a third electrode 116. 1A and 1B, the first electrode 112 is shared between the VCSEL 128 and the photodiode 108, while the second electrode 114 may be connected to the VCSEL 128 and the third electrode 116 may be connected to the photodiode 108. Other configurations are possible. For example, each VCSEL 128 may be connected to a respective cathode and a respective anode, and each photodiode 108 may be connected to a respective cathode and a respective anode that are separate from the cathode and anode of the VCSEL 128. Additionally or alternatively, the photodiode 108 of at least one VCSEL 128 may share at least one of its respective cathode or anode with the emitter of the VCSEL 128. In some non-limiting embodiments or aspects, the substrate layer 102 can be considered the bottom layer, and each of the other layers (e.g., the DBR layer 104, the active region 106, and the photodiode 108) can be formed (e.g., epitaxially deposited, etc.) on the substrate layer 102. For example, the sensing element 100 (e.g., including the substrate layer 102, the DBR layer 104, the active region 106, the photodiode 108, the electrodes 112, 114, and 116) can be inverted (e.g., flipped over) before being connected to the connection layer 118.
[0101] In some non-limiting embodiments or aspects, the connection layer 118 may include a submount layer and / or an integrated circuit (IC) having interconnects for connecting to the electrodes 112, 114, 116 of the sensing element 100. In some non-limiting embodiments or aspects, the connection layer 118 may connect the sensing element 100 to a computing device and / or other components of a system, as described herein.
[0102] In some non-limiting embodiments or aspects, each VCSEL 128 may be separated from at least one adjacent VCSEL 128 by an isolation layer 110. For example, the isolation layer 110 may include an insulating layer that separates adjacent VCSELs 128 and / or components thereof, e.g., to prevent interference and / or leakage between adjacent VCSELs 128.
[0103] In some non-limiting embodiments or aspects, each VCSEL 128 can be configured to emit an emission signal 122 (e.g., light such as laser light). Additionally, each VCSEL 128 can be configured to receive a reflected signal 124 based on the emitted signal 122. A photodetector (e.g., photodiode 108) of each VCSEL 128 can be configured to generate an SMI signal based on at least one of the emitted signal 122, the reflected signal 124, or any combination thereof. For example, the reflected signal 124 can interfere with the emitted signal 122, causing modulation. The SMI signal can be based on modulation (e.g., of the emitted signal 122 within the laser cavity of the VCSEL 128). In some non-limiting embodiments or aspects, the modulation can include at least one of amplitude modulation, frequency modulation, or any combination thereof. In some non-limiting embodiments or aspects, the SMI signal can be based on the power, threshold current, and / or operating voltage of the VCSEL 128 (e.g., which may change as a result of the interference and / or modulation). For example, the power, threshold current, and / or operating voltage of each VCSEL 128 can be measured based on the connection of each VCSEL 128 to electrodes 112, 114, and / or 116.
[0104] In some non-limiting embodiments or aspects, each VCSEL 128 may be individually addressable. For example, the emission of each VCSEL 128 may be switched on and off in a sequence (e.g., a predetermined sequence, a selected sequence, etc.) to provide individual emission signals 122 separated by the angle of emission, as described herein. In some non-limiting embodiments or aspects, the sequence may include switching (e.g., turning on and then off) each VCSEL 128 sequentially (e.g., alternating until each VCSEL 128 in the array has been turned on and then off). Additionally or alternatively, any suitable sequence may be used. In some non-limiting embodiments or aspects, the switching of each VCSEL 128 may be controlled by at least one switching element, such as a pseudo-high electron mobility transistor (pHEMT), a high electron mobility transistor (HEMT), a metal-semiconductor field effect transistor (MESFET), a heterostructure field effect transistor (HFET), a heterojunction bipolar transistor (HBT), any other suitable transistor, an integrated thyristor, any other suitable thyristor, or any combination thereof.
[0105] In some non-limiting embodiments or aspects, each VCSEL 128 can be bottom-emitting (BSE) or top-emitting (TSE). For example, at least one VCSEL 128 can be configured to emit through a top surface of the sensing element 100 (e.g., which may be the bottom in the drawing of FIG. 1B if the sensing element 100 is inverted before connecting to the connecting layer 118). Additionally or alternatively, at least one VCSEL 128 can be configured to emit through a bottom surface of the sensing element 100 (e.g., which may be the top in the drawing of FIG. 1B if the sensing element 100 is inverted before connecting to the connecting layer 118). For example, in the case of a BSE, the VCSEL 128 can be configured to emit through the substrate layer 102 at the bottom surface of the sensing element 100. In some non-limiting embodiments or aspects, in the case of a BSE, the photodiode 108 of the VCSEL 128 may be near the epitaxial side (e.g., the top side, opposite the substrate layer 102, etc.) relative to the active region 106 of the VCSEL 128, rather than the substrate side (e.g., the bottom side).
[0106] In some non-limiting embodiments or aspects, the photodiode 108 may include a PIN photodiode, where "P" refers to a p-type semiconductor, "I" refers to an intrinsic semiconductor, and "N" refers to an n-type semiconductor. For example, a PIN photodiode may include at least three layers, including a P layer (e.g., a p-type semiconductor layer), an intrinsic layer, and an N layer (e.g., an n-type semiconductor layer). In some non-limiting embodiments or aspects, the photodiode 108 may include a PN photodiode (e.g., having a P layer and an N layer, which may have a depletion region therebetween), or any other suitable photodiode.
[0107] In some non-limiting embodiments or aspects, the at least one optical element 120 can be configured to at least one of steer the emission signal 122 from the emitter (e.g., the VCSEL 128), polarize the emission signal 122 from the emitter (e.g., the VCSEL 128), or any combination thereof.
[0108] In some non-limiting embodiments or aspects, the optical element 120 can include at least one grating configured to polarize the emission signal 122 from an emitter (e.g., a VCSEL 128). In some non-limiting embodiments or aspects, each grating can be configured to polarize the emission signal 122 in one direction. In some non-limiting embodiments or aspects, each grating can be configured to polarize the emission signal 122 in one of two orthogonal directions. For example, one or more gratings can be configured to polarize the emission signal 122 from one or more VCSELs in a first direction, and one or more other gratings (e.g., the remainder of the gratings) can be configured to polarize the emission signal 122 from one or more other VCSELs in a second direction orthogonal to the first direction. In some non-limiting embodiments, two emitters (e.g., VCSELs) with orthogonal polarization directions can be operated (e.g., switched on) simultaneously, which can improve acquisition speed or resolution.
[0109] In some non-limiting embodiments or aspects, for a TSE, each grating can be located on a top layer (e.g., on the DBR layer 104 opposite the substrate), which may be on top of the emitter (e.g., the VCSEL 128). For a BSE, the grating can be located inside the cavity (e.g., of the VCSEL 128) and / or in the DBR layer 104. Additionally or alternatively, for a BSE, the grating can be formed on the epitaxial side (e.g., on the top surface, the surface opposite the substrate, etc.) of the active region 106 (e.g., quantum well).
[0110] In some non-limiting embodiments or aspects, the at least one optical element 120 may include at least one collimating element for each emitter (e.g., VCSEL 128). In some non-limiting embodiments or aspects, the collimating elements may be configured to direct the emission signal 122 from the emitter (e.g., VCSEL 128) in a respective angular offset direction relative to a normal 126 to a surface of the sensing element 100 (e.g., a bottom surface of the sensing element 100, a top surface of the sensing element 100, a surface of the substrate layer 102, etc.).
[0111] In some non-limiting embodiments or aspects, the collimating element can include at least one of a collimating lens, a meta-optic element, or any combination thereof. In some non-limiting embodiments or aspects, the collimating element can include a portion of a hybrid lens array attached to the sensing element 100 (e.g., on a surface of the sensing element 100).
[0112] In some non-limiting embodiments or aspects, in the case of a BSE, the collimating element may be formed on the substrate layer 102 and / or on the bottom surface of the substrate layer 102.
[0113] In some non-limiting embodiments or aspects, the sensing element 100 may be at least partially formed by at least one of (and / or at least a portion of) a semiconductor wafer, an integrated circuit chip, or any combination thereof. For example, the collimating element may be attached to the VCSEL 128 at the wafer level or at the chip level.
[0114] In some non-limiting embodiments or aspects, the sensing element 100 may include and / or be connected to (e.g., electrically connected, communicatively connected, etc. via the electrodes 112, 114, and 116 and / or the connecting layer 118) a circuit (e.g., a processor, a computing device, etc.). For example, the circuit may be configured to separate the SMI signal of each emitter (e.g., VCSEL 128) according to at least one of the direction, distance, polarization, velocity, or any combination thereof, of at least one object in each direction of the emission signal 122 from the VCSEL 128. Additionally or alternatively, the circuit may be configured to generate a plurality of 3D points based on the SMI signal from the VCSEL 128 (e.g., based on the direction, distance, polarization, and / or velocity of the object from which the reflected signal 124 was reflected). In some non-limiting embodiments or aspects, the circuit may be configured to generate a 3D image based on the plurality of three-dimensional points. For example, the SMI signal may be based on the measured power, threshold current, and / or operating voltage of each VCSEL 128, which may be connected to a circuit (e.g., a processor, computing device, etc.) via the electrodes 112, 114, and / or 116 of each VCSEL 128 and / or the connecting layer 118.
[0115] The number and arrangement of components shown in Figures 1A-1C are provided as an example. There may be additional, fewer, different, and / or differently arranged components than those shown in Figures 1A-1C. Furthermore, two or more components shown in Figures 1A-1C may be implemented within a single component, or a single component shown in Figures 1A-1C may be implemented as multiple distributed components. Additionally or alternatively, a set of components (e.g., one or more components) of sensing element 100 may perform one or more functions described as being performed by another set of components of sensing element 100.
[0116] Referring now to FIG. 2 and with continuing reference to FIG. 1, FIG. 2 illustrates a flow diagram of a method 200 for using a sensing element having at least one integrated detector array, according to certain non-limiting embodiments or aspects. The steps illustrated in FIG. 2 are for illustrative purposes only. It will be appreciated that additional steps, fewer steps, different steps, and / or steps in a different order may be used in certain non-limiting embodiments or aspects. In certain non-limiting embodiments or aspects, steps may be performed automatically upon the execution and / or completion of a previous step.
[0117] 2, in step 202, the method 200 may include emitting an emission signal by each of a plurality of emitters (e.g., VCSELs). For example, each VCSEL 128 may emit (e.g., in a sequence, etc.) an emission signal 122 as described herein.
[0118] In some non-limiting embodiments or aspects, each VCSEL 128 may be individually addressable, as described herein. The emitters of each VCSEL 128 may be switched on and off (e.g., turned on and off) in sequence to provide individual emission beams separated by the angle of emission, as described herein.
[0119] In some non-limiting embodiments or aspects, the emitted signal 122 from the at least one VCSEL 128 can be steered. For example, the emitted signal 122 can be steered with at least one collimating element, as described herein.
[0120] In some non-limiting embodiments or aspects, the emitted signal 122 from the at least one VCSEL 128 can be polarized. For example, the emitted signal 122 can be polarized by at least one grating, as described herein.
[0121] 2, in step 204, the method 200 may include receiving (e.g., at each VCSEL) a reflected signal based on the emitted signal. For example, each VCSEL 128 may receive a reflected signal 124 based on the emitted signal 122, as described herein.
[0122] 2, in step 204, the method 200 may include generating an SMI signal for each emitter (e.g., for each VCSEL). For example, a photodetector (e.g., photodiode 108) of each VCSEL 128 may generate the SMI signal for the respective VCSEL 128 based on at least one of the emitted signal 122, the reflected signal 124, or any combination thereof, as described herein.
[0123] In some non-limiting embodiments or aspects, the reflected signal 124 may interfere with the emitted signal 122, causing modulation, as described herein. The SMI signal may be based on modulation. For example, the modulation may include at least one of amplitude modulation, frequency modulation, or any combination thereof.
[0124] In some non-limiting embodiments or aspects, the SMI signals of each VCSEL 128 may be separated by at least one of the direction, distance, polarization, and / or velocity of at least one object in each direction of the emission signal 122 from the respective VCSEL 128, as described herein.
[0125] In some non-limiting embodiments or aspects, multiple 3D points may be generated, as described herein, based on SMI signals from multiple VCSELs 128. In some non-limiting embodiments or aspects, a three-dimensional image may be generated, as described herein, based on the 3D points.
[0126] 3, a system 300 including a sensing element having at least one integrated detector array is shown, according to some non-limiting embodiments or aspects. In some non-limiting embodiments or aspects, the system 300 may include a computing device 302, which may include and / or be connected to the sensing element 100.
[0127] In some non-limiting embodiments or aspects, the computing device 302 may include at least one of a smartphone, a tablet computer, a laptop computer, a desktop computer, a wearable computing device, any combination thereof, and the like.
[0128] In some non-limiting embodiments or aspects, the computing device 302 may include a display 304. For example, the display 304 may include a display, a touchscreen display, any combination thereof, or the like.
[0129] In some non-limiting embodiments or aspects, the sensing element 100 may be behind the display 304. For example, at least one aperture 306 is defined in the display 304 in front of the sensing element 100. In some non-limiting embodiments or aspects, because the sensing element 100 includes an integrated detector array (e.g., a photodiode 108 in each VCSEL 128 of the array VCSELs 128), the size of the sensing element 100 can be reduced, thereby reducing the size of the aperture 306. This reduction in size reduces the unusable area of the display 304, which can improve the appearance and functionality of the display 304 and / or the computing device 302.
[0130] In some non-limiting embodiments or aspects, the computing device 302 (e.g., its processor) can receive the SMI signal of each emitter (e.g., each VCSEL 128) from the sensing element 100 as described herein. For example, the computing device 302 can be connected to the sensing element 100 via the electrodes 112, 114, and 116 and / or the connecting layer 118.
[0131] In some non-limiting embodiments or aspects, the computing device 302 (e.g., its processor) can separate the SMI signals of each VCSEL 128 by at least one of the direction, distance, polarization, and / or velocity of at least one object in each direction of the emission signal 122 from each VCSEL 128, as described herein.
[0132] In some non-limiting embodiments or aspects, the computing device 302 (e.g., its processor) can generate a plurality of 3D points, as described herein, based on the SMI signals from the plurality of VCSELs 128. Additionally or alternatively, the computing device 302 (e.g., its processor) can generate a 3D image (e.g., based on the 3D points), as described herein.
[0133] The number and arrangement of components shown in Figure 3 are provided as an example. There may be additional, fewer, different, and / or differently arranged components than those shown in Figure 3. Furthermore, two or more components shown in Figure 3 may be implemented within a single component, or a single component shown in Figure 3 may be implemented as multiple distributed components. Additionally or alternatively, a set of components of system 300 (e.g., one or more components) may perform one or more functions that are described as being performed by another set of components of system 300.
[0134] 4, a diagram of example components of a computing device 400 is shown, according to some non-limiting embodiments or aspects. Computing device 400 may correspond to system 300, as an example. In some non-limiting embodiments or aspects, system 300 may include at least one computing device 400 and / or at least one component of computing device 400. The number and arrangement of components shown is provided as an example. In some non-limiting embodiments, computing device 400 may include additional components, fewer components, different components, or components arranged differently than shown. Additionally or alternatively, a set of components of computing device 400 (e.g., one or more components) may perform one or more functions described as being performed by another set of components of computing device 400.
[0135] 4, computing device 400 may include a bus 402, a processor 404, a memory 406, storage components 408, input components 410, output components 412, and / or a communication interface 414. Bus 402 may include components that enable communication between components of computing device 400. In some non-limiting embodiments, processor 404 may be implemented in hardware, firmware, or a combination of hardware and software. For example, processor 404 may include a processor (e.g., a central processing unit (CPU), a graphics processing unit (GPU), an accelerated processing unit (APU), etc.), a microprocessor, a digital signal processor (DSP), and / or any processing component that can be programmed to perform a function (e.g., a field programmable gate array (FPGA), an application-specific integrated circuit (ASIC), etc.). Memory 406 may include random access memory (RAM), read-only memory (ROM), and / or another type of dynamic or static storage device (e.g., flash memory, magnetic memory, optical memory, etc.) that stores information and / or instructions for use by processor 404.
[0136] 4, storage component 408 may store information and / or software related to the operation and use of computing device 400. For example, storage component 408 may include a hard disk (e.g., a magnetic disk, an optical disk, a magneto-optical disk, a solid-state disk, etc.) and / or another type of computer-readable medium. Input component 410 may include components that enable computing device 400 to receive information via user input (e.g., a touchscreen display, a keyboard, a keypad, a mouse, a button, a switch, a microphone, etc.). Additionally or alternatively, input component 410 may include sensors for sensing information (e.g., a global positioning system (GPS) component, an accelerometer, a gyroscope, an actuator, etc.). Output component 412 may include components that provide output information from computing device 400 (e.g., a display, a speaker, one or more light-emitting diodes (LEDs), etc.). The communication interface 414 may include transceiver-like components (e.g., a transceiver, a separate receiver and transmitter, etc.) that enable the computing device 400 to communicate with other devices, such as via a wired connection, a wireless connection, or a combination of wired and wireless connections. The communication interface 414 may enable the computing device 400 to receive information from and / or provide information to another device. For example, the communication interface 414 may include an Ethernet interface, an optical interface, a coaxial interface, an infrared interface, a radio frequency (RF) interface, a universal serial bus (USB) interface, a Wi-Fi interface, a cellular network interface, etc.
[0137] The computing device 400 may perform one or more processes described herein. The computing device 400 may perform these processes based on the processor 404 executing software instructions stored by a computer-readable medium, such as the memory 406 and / or the storage component 408. The computer-readable medium may include any non-transitory memory device. The memory device may include a memory space within a single physical storage device or a memory space spread across multiple physical storage devices. The software instructions may be loaded into the memory 406 and / or the storage component 408 from another computer-readable medium or from another device via the communication interface 414. The software instructions stored in the memory 406 and / or the storage component 408, when executed, may cause the processor 404 to perform one or more processes described herein. Additionally or alternatively, hardwired circuitry may be used in place of or in combination with software instructions to perform one or more processes described herein. Accordingly, the embodiments described herein are not limited to any specific combination of hardware circuitry and software. As used herein, the term "configured to" can refer to a configuration of software, devices, and / or hardware to perform and / or enable one or more functions (e.g., actions, processes, process steps, etc.). For example, a "processor configured to" can refer to a processor that executes software instructions (e.g., program code) that cause the processor to perform one or more functions.
[0138] While embodiments have been described in detail for purposes of illustration, it should be understood that such detail is for that purpose only, and that the disclosure is not limited to the disclosed embodiments or aspects, but rather is intended to cover modifications and equivalent arrangements within the spirit and scope of the appended claims. For example, it should be understood that the disclosure contemplates that, to the extent possible, one or more features of any embodiment or aspect may be combined with one or more features of any other embodiment or aspect. [Explanation of symbols]
[0139] 100 sensing element 102 substrate layer 104 Distributed Bragg Reflector (DBR) layer 106 Active region 108 Photodiode 110 Separation layer 112 first electrode 114 Second electrode 116 Third Electrode 118 Connection Layer 120 Optical Elements 122 Emission Signal 124 Reflected signal 126 Normal 128 Vertical Cavity Surface Emitting Laser (VCSEL) 200 ways Steps 202, 204, and 206 300 System 302 Computing Devices 304 Display 306 Aperture 400 computing devices 402 Bus 404 processor 406 memory 408 Storage Components 410 Input Component 412 Output Components 414 Communication Interface
Claims
1. a sensing element having at least one integrated detector array, a plurality of vertical cavity surface emitting lasers (VCSELs), each VCSEL of the plurality of VCSELs comprising: emitter, and Photodetector Including, a plurality of vertical cavity surface emitting lasers (VCSELs), each VCSEL of the plurality of VCSELs configured to generate a self-mixing interferometric (SMI) signal; A sensing element comprising:
2. 2. The sensing element of claim 1, wherein the emitter of each VCSEL of the plurality of VCSELs is configured to emit an emission signal, each VCSEL of the plurality of VCSELs is configured to receive a reflected signal based on the emitted signal, and the photodetector of each VCSEL of the plurality of VCSELs is configured to generate the SMI signal based on at least one of the emitted signal, the reflected signal, or any combination thereof.
3. The sensing element of claim 2 , wherein the reflected signal interferes with the emitted signal to cause a modulation, and the SMI signal is based on the modulation.
4. The sensing element of claim 3 , wherein the modulation comprises at least one of amplitude modulation, frequency modulation, or any combination thereof.
5. The sensing element of claim 1 , wherein the plurality of VCSELs are arranged in an array.
6. The sensing element of claim 1 , wherein each VCSEL of the plurality of VCSELs is individually addressable.
7. 10. The sensing element of claim 1, wherein the emitters of each VCSEL of the plurality of VCSELs are turned on and off in a predetermined sequence to provide individual emission beams separated by an angle of emission.
8. The sensing element of claim 1 , wherein the emitter of at least one VCSEL of the plurality of VCSELs is configured to emit through a top surface of the sensing element.
9. The sensing element of claim 1 , wherein the emitter of at least one VCSEL of the plurality of VCSELs is configured to emit through a bottom surface of the sensing element.
10. The sensing element of claim 9 , wherein the emitter of the at least one VCSEL is configured to emit through a substrate at the bottom surface of the sensing element.
11. The sensing element of claim 1 , wherein each photodetector comprises at least one of a photodiode, a PIN photodiode, or any combination thereof.
12. The sensing element of claim 1 , wherein the emitter of each VCSEL of the plurality of VCSELs is connected to a respective cathode and a respective anode.
13. The sensing element of claim 12 , wherein the photodetector of each VCSEL of the plurality of VCSELs is connected to a cathode and an anode.
14. 13. The sensing element of claim 12, wherein the photodetector of at least one VCSEL of the plurality of VCSELs shares at least one of the respective cathode or the respective anode with the emitter of the at least one VCSEL.
15. 10. The sensing element of claim 1, further comprising at least one optical element configured to at least one of: steer an emission signal from the emitter of at least one VCSEL of the plurality of VCSELs; polarize the emission signal from the emitter of at least one VCSEL of the plurality of VCSELs; or any combination thereof.
16. 16. The sensing element of claim 15, wherein the at least one optical element comprises at least one grating configured to polarize the emission signal from the emitter of the at least one VCSEL of the plurality of VCSELs.
17. 17. The sensing element of claim 16, wherein each of the at least one grating is configured to polarize the emitted signal in one direction.
18. 17. The sensing element of claim 16, wherein each of the at least one grating is configured to polarize the emitted signal in one of two orthogonal directions.
19. 17. The sensing element of claim 16, wherein the emitter of the at least one VCSEL of the plurality of VCSELs is configured to emit through a bottom surface of the sensing element, and the at least one grating is formed on an epitaxial side of a quantum well opposite a substrate of the sensing element.
20. The sensing element of claim 15 , wherein the at least one optical element includes at least one collimating element for each emitter of each VCSEL of the plurality of VCSELs.
21. 21. The sensing element of claim 20, wherein the emitter of the at least one VCSEL of the plurality of VCSELs is configured to emit through a bottom surface of the sensing element, and the at least one collimating element is formed in a substrate of the sensing element.
22. 21. The sensing element of claim 20, wherein the at least one collimating element is configured to direct an emission signal from the emitter of each VCSEL of the plurality of VCSELs in a respective angular offset direction relative to a normal to a surface of the sensing element.
23. The sensing element of claim 20 , wherein the at least one collimating element comprises at least one of a collimating lens, a meta-optical element, or any combination thereof.
24. The sensing element of claim 20 , wherein the at least one collimating element comprises a portion of a hybrid lens array attached to the sensing element.
25. 21. The sensing element of claim 20, wherein the sensing element is at least partially formed by at least one of a semiconductor wafer, an integrated circuit chip, or any combination thereof, and the at least one collimating element is attached to the plurality of VCSELs at a wafer level or a chip level.
26. 2. The sensing element of claim 1, further comprising: circuitry configured to separate the SMI signal of each VCSEL of the plurality of VCSELs by at least one of a direction, a distance, a polarization, a velocity, or any combination thereof, of at least one object in a respective direction of an emission signal from the emitter of each VCSEL of the plurality of VCSELs.
27. The sensing element of claim 1 , wherein the sensing element is at least partially formed by at least one of a semiconductor wafer, an integrated circuit chip, or any combination thereof.
28. 1. A method for using a sensing element including a plurality of vertical cavity surface emitting lasers (VCSELs), each VCSEL including an emitter and a photodetector, the method comprising: emitting an emission signal by the emitter of each VCSEL of the plurality of VCSELs; receiving, by each VCSEL of the plurality of VCSELs, a reflected signal based on the emitted signal; generating, by the photodetector of each VCSEL of the plurality of VCSELs, a self-mixing interferometry (SMI) signal for each VCSEL of the plurality of VCSELs based on at least one of the emitted signal, the reflected signal, or any combination thereof; A method comprising:
29. 29. The method of claim 28, wherein the reflected signal interferes with the emitted signal to cause a modulation, and the SMI signal is based on the modulation.
30. 30. The method of claim 29, wherein the modulation comprises at least one of amplitude modulation, frequency modulation, or any combination thereof.
31. 30. The method of claim 28, wherein each VCSEL of the plurality of VCSELs is individually addressable, and the emitters of each VCSEL of the plurality of VCSELs are turned on and off in a predetermined sequence to provide individual emission beams separated by an angle of emission.
32. steering an emission signal from the emitter of at least one VCSEL of the plurality of VCSELs with at least one collimating element; 30. The method of claim 28, further comprising:
33. polarizing the emission signal from the emitter of at least one VCSEL of the plurality of VCSELs with at least one grating; 30. The method of claim 28, further comprising:
34. Separating the SMI signal of each VCSEL of the plurality of VCSELs by at least one of a direction, a distance, a polarization, a velocity, or any combination thereof, of at least one object in a respective direction of the emission signal from the emitter of each VCSEL of the plurality of VCSELs.
30. The method of claim 28, further comprising:
35. generating a plurality of three-dimensional points based on the SMI signals from the plurality of VCSELs; 30. The method of claim 28, further comprising:
36. generating a three-dimensional image based on the plurality of three-dimensional points; 36. The method of claim 35, further comprising:
37. a computing device; a sensing element connected to the computing device, the sensing element comprising: a plurality of vertical cavity surface emitting lasers (VCSELs), each VCSEL of the plurality of VCSELs comprising: emitter, and Photodetector Including, a plurality of vertical cavity surface emitting lasers (VCSELs), each VCSEL of the plurality of VCSELs configured to generate a self-mixing interferometric (SMI) signal; a sensing element including A system including:
38. 38. The system of claim 37, wherein the computing device comprises at least one of a smartphone, a tablet computer, a laptop computer, a desktop computer, a wearable computing device, or any combination thereof.
39. 38. The system of claim 37, wherein the computing device includes a display, and the sensing element is behind the display.
40. 40. The system of claim 39, wherein at least one aperture is defined in the display in front of the sensing element.
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