Substrate processing apparatus

Abstract

To provide a substrate processing apparatus capable of suppressing contamination of a substrate.SOLUTION: The substrate processing apparatus 100 includes a chamber 11, a substrate holding unit 200, and a moving mechanism 300. The chamber 11 accommodates the substrate W. The substrate holder 200 is disposed in the chamber 11 and holds the substrates W one by one. The moving mechanism 300 moves the substrate holding unit 200. The substrate holder 200 has a chuck pin 202 that comes into contact with the substrate W. The moving mechanism 300 moves the substrate holding part 200 between at least one processing position Q where the substrate W is processed by the processing liquid and a cleaning position CW where the chuck pins 202 are cleaned in the chamber 11.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] Conventionally, substrate processing apparatuses for processing substrates have been known. Substrate processing apparatuses are preferably used in the manufacture of semiconductor substrates. Substrate processing apparatuses process substrates using a processing liquid such as a chemical solution. Known substrate processing apparatuses include a single-wafer type substrate processing apparatus that processes substrates one by one, and a batch type substrate processing apparatus that processes multiple substrates by immersing them in a processing tank at once. For example, Patent Document 1 describes a single-wafer type substrate processing apparatus that includes a holding and rotating unit that holds and rotates the substrates, and a discharging unit that discharges a processing liquid onto the substrates being rotated by the holding and rotating unit.

[0003] In single-wafer substrate processing equipment, substrates are processed by holding them horizontally and rotating them one by one, while supplying processing liquid to the rotating substrates. Generally, single-wafer substrate processing equipment can be made smaller than batch-type substrate processing equipment, which makes it possible to reduce the amount of processing liquid consumed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-126886 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in conventional single-wafer processing substrate processing apparatuses, the holding and rotating unit that holds the substrate is located at the processing position, and the contact portion of the holding and rotating unit that comes into contact with the substrate is not cleaned, which has resulted in the substrate being contaminated by particles and the like through the contact portion.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus capable of suppressing contamination of substrates. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus includes a chamber, a substrate holding unit, and a movement mechanism. The chamber accommodates substrates. The substrate holding unit is disposed within the chamber and holds the substrates one by one. The movement mechanism moves the substrate holding unit. The substrate holding unit has a contact member that contacts the substrate. The movement mechanism moves the substrate holding unit within the chamber between at least one processing position where the substrate is processed with a processing liquid and a cleaning position where the contact member is cleaned.

[0008] In one embodiment, the substrate processing apparatus includes an immersion tank disposed at the processing position, for storing the processing liquid, and for accommodating the substrate and immersing the substrate in the processing liquid.

[0009] In one embodiment, the immersion tank is provided with a support stage for supporting the substrate.

[0010] In one embodiment, the substrate processing apparatus includes a cleaning tank disposed at the cleaning position, for storing a cleaning liquid, and for accommodating the contact member so that the contact member is immersed in the cleaning liquid.

[0011] In one embodiment, the substrate holder includes a rotation drive unit that rotates the contact member while the contact member is immersed in the cleaning liquid stored in the cleaning tank.

[0012] In one embodiment, a plurality of the processing positions are provided, and the movement mechanism moves the substrate holder between the plurality of processing positions.

[0013] In one embodiment, the plurality of processing positions include a first processing position and a second processing position, wherein the substrate is processed at the first processing position with a first processing liquid, and the substrate is processed at the second processing position with a second processing liquid different from the first processing liquid.

[0014] In one embodiment, the plurality of processing positions further includes a third processing position. The processing liquids include a first chemical liquid that is the first processing liquid, a second chemical liquid that is the second processing liquid, and a rinse liquid. At the first processing position, the substrate is processed with the first chemical liquid. At the second processing position, the substrate is processed with the second chemical liquid. At the third processing position, the substrate is processed with the rinse liquid.

[0015] In one embodiment, the treatment liquid includes a first chemical liquid that is the first treatment liquid and a second chemical liquid that is the second treatment liquid. After the contact member comes into contact with one of the first chemical liquid and the second chemical liquid, the contact member is washed at the washing position before coming into contact with the other of the first chemical liquid and the second chemical liquid.

[0016] In one embodiment, the substrate holder transports the substrate to the plurality of processing positions to process the plurality of substrates in parallel, and the contact member is cleaned at the cleaning position when the substrate is transferred from one processing position to another.

[0017] In one embodiment, the substrate processing apparatus includes a support member. The support member is disposed inside the chamber and supports the substrate. The chamber has an opening that connects the interior to the exterior and through which the substrate is loaded and / or unloaded. A support position where the support member is disposed is provided inside the chamber. The support position is located closer to the opening than the processing position. The substrate holder transports the substrate from the support position to the processing position.

[0018] In one embodiment, the substrate holder holds the substrate horizontally and includes a base disposed above the substrate and a plurality of chuck pins, which are the contact members, protruding downward from the base and holding the peripheral edge of the substrate.

[0019] In one embodiment, the moving mechanism includes a pivoting mechanism that pivots the substrate holder about a pivot axis, the processing position and the cleaning position are located on concentric circles about the pivot axis, and the pivoting mechanism moves the substrate holder between the processing position and the cleaning position within the chamber.

[0020] In one embodiment, the chamber has an opening that connects the inside to the outside and through which the substrate is loaded and / or unloaded, and of the processing position and the cleaning position, the cleaning position is located farthest from the opening.

[0021] In one embodiment, a plurality of the processing positions are provided, the plurality of processing positions and the cleaning position are located on a straight line, and the movement mechanism moves the substrate holding part in a straight line to move the substrate holding part between the plurality of processing positions and the cleaning position within the chamber.

[0022] In one embodiment, the chamber has an opening that connects the inside to the outside and through which the substrate is loaded and / or unloaded, and of the processing position and the cleaning position, the cleaning position is located farthest from the opening.

[0023] In one embodiment, a plurality of the processing positions are provided, and the cleaning position is located between the processing positions.

[0024] In one embodiment, a plurality of the processing positions are provided. The processing liquid includes a chemical liquid and a rinse liquid. The plurality of processing positions include a chemical liquid processing position where the substrate is processed with the chemical liquid and a rinse processing position where the substrate is processed with the rinse liquid. The cleaning position is adjacent to the rinse processing position. [Effects of the Invention]

[0025] According to the present invention, it is possible to provide a substrate processing apparatus capable of suppressing contamination of a substrate. [Brief explanation of the drawings]

[0026] [Figure 1] FIG. 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a schematic plan view showing the inside of one chamber of the substrate processing apparatus according to the first embodiment. [Figure 3] FIG. 1 is a block diagram of a substrate processing apparatus according to a first embodiment. [Figure 4] FIG. 2 is a flowchart of a substrate processing method according to the first embodiment. [Figure 5] FIG. 2 is a schematic view of a substrate processing unit in the substrate processing apparatus of the first embodiment. [Figure 6] 2 is a schematic view showing the structure around a substrate holding unit and a moving mechanism of the substrate processing apparatus according to the first embodiment. FIG. [Figure 7] FIG. 10 is a flow chart showing a method for immersing a substrate in a processing liquid. [Figure 8] 5A to 5C are schematic diagrams for explaining a method of immersing a substrate in a processing liquid. [Figure 9] 5A to 5C are schematic diagrams for explaining a method of immersing a substrate in a processing liquid. [Figure 10] 5A to 5C are schematic diagrams for explaining a method of immersing a substrate in a processing liquid. [Figure 11] FIG. 2 is a schematic view showing a structure around a cleaning tank of the substrate processing apparatus. [Figure 12] FIG. 10 is a schematic plan view of a substrate processing apparatus according to a second embodiment. [Figure 13] FIG. 10 is a schematic plan view showing the inside of one chamber of a substrate processing apparatus according to a second embodiment. [Figure 14] FIG. 10 is a flowchart of a substrate processing method according to a second embodiment. [Figure 15] FIG. 10 is a schematic plan view of a substrate processing apparatus according to a third embodiment. [Figure 16] FIG. 10 is a schematic view showing the structure around a substrate holding unit and a moving mechanism of a substrate processing apparatus according to a third embodiment. [Figure 17] FIG. 10 is a schematic plan view of a substrate processing apparatus according to a fourth embodiment. [Figure 18] FIG. 10 is a schematic plan view showing the inside of one chamber of a substrate processing apparatus according to a fourth embodiment. [Figure 19] FIG. 10 is a flowchart of a substrate processing method for the substrate processing apparatus according to a first modified example of the present invention. [Figure 20] FIG. 10 is a schematic plan view showing the inside of one chamber of a substrate processing apparatus according to a second modified example of the present invention. [Figure 21] FIG. 10 is a flowchart of a substrate processing method for the substrate processing apparatus according to a second modified example. [Figure 22] FIG. 11 is a schematic plan view showing the inside of one chamber of a substrate processing apparatus according to a third modified example. [Figure 23] FIG. 10 is a flowchart of a substrate processing method for the substrate processing apparatus according to a third modified example of the present invention. [Figure 24] FIG. 11 is a schematic plan view showing the inside of one chamber of a substrate processing apparatus according to a fourth modified example of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0027] Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described with reference to the drawings. In the drawings, identical or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated. In this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. In this embodiment, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. To facilitate understanding, processing liquid may be hatched in the drawings.

[0028] (First embodiment) A substrate processing apparatus 100 according to a first embodiment of the present invention will be described with reference to Figures 1 to 11. Figure 1 is a schematic plan view of the substrate processing apparatus 100 according to the first embodiment.

[0029] The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least a portion of a film, and cleaning on the substrate W.

[0030] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W has a substantially circular disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0031] 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 10, a plurality of load ports LP, an indexer robot IR, a center robot CR, a passage 111, a loading chamber 112, and a controller 101. The controller 101 controls the indexer robot IR and the center robot CR. The controller 101 includes a control unit 102 and a memory unit 104.

[0032] A substrate W is loaded into the loading chamber 112 from outside. Specifically, the loading chamber 112 has a substantially rectangular shape extending in a predetermined direction (here, the Y direction). A plurality of load ports LP are connected to the loading chamber 112. An indexer robot IR is disposed inside the loading chamber 112. The indexer robot IR loads the substrate W from the load port LP into the loading chamber 112.

[0033] The passage 111 is connected to the carry-in chamber 112. The passage 111 has, for example, a substantially rectangular shape extending in a direction (here, the X direction) intersecting the extension direction of the carry-in chamber 112. Inside the passage 111, a center robot CR is disposed.

[0034] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing units 10. Each substrate processing unit 10 discharges a processing liquid onto the substrate W to process the substrate W. The processing liquid includes, for example, a chemical liquid, a rinse liquid, a remover liquid, and / or a water repellent agent.

[0035] Specifically, the substrate processing units 10 form a plurality of towers arranged on both sides in the Y direction across a passage 111 through which the center robot CR passes in a plan view. Each tower includes a plurality of (e.g., three) substrate processing units 10 stacked one above the other.

[0036] The substrate processing apparatus 100 also includes a processing liquid cabinet (not shown) that supplies processing liquid to all of the substrate processing units 10 included in the substrate processing apparatus 100. The processing liquid cabinet has a pump, a nozzle, a filter, and / or a tank for circulating the processing liquid.

[0037] The control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 causes the substrate processing unit 10 to process the substrate W.

[0038] The control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 has a processor. The control unit 102 has, for example, a central processing unit (CPU). Alternatively, the control unit 102 may have a general-purpose computer.

[0039] The memory unit 104 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W. The control unit 102 executes the computer program stored in the memory unit 104 to perform substrate processing operations.

[0040] The storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 104 may include removable media. The control unit 102 executes computer programs stored in the storage unit 104 to perform substrate processing operations.

[0041] Continuing to refer to Figure 1, the substrate processing unit 10 will be described. As shown in Figure 1, the substrate processing unit 10 includes a chamber 11, a substrate holder 200, a moving mechanism 300 (see Figure 3), and an immersion tank 400.

[0042] The chamber 11 is connected to a passage 111. The chamber 11 extends, for example, along the passage 111.

[0043] The chamber 11 has a generally box-like shape with an internal space. The chamber 11 accommodates a substrate W. Here, the substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one by one. The substrate W is accommodated in the chamber 11 and processed therein. The chamber 11 accommodates a substrate holder 200, a moving mechanism 300 (see FIG. 3), and an immersion tank 400. The chamber 11 also has a side wall 11a that separates the inside and outside of the chamber 11 (here, a passage 111). An opening 12 is formed at a predetermined position on the side wall 11a, through which the center robot CR loads and unloads the substrate W. In this embodiment, one opening 12 is provided for each chamber 11. The opening 12 connects the inside of the chamber 11 with the passage 111, through which the substrate W is loaded and unloaded. A shutter 13 that opens and closes the opening 12 is provided at a predetermined position on the side wall 11a of the chamber 11. The number of shutters 13 provided is the same as the number of openings 12 .

[0044] The substrate holding unit 200 holds the substrates W. Specifically, the substrate holding unit 200 holds the substrates W one by one. The substrate holding unit 200 holds the substrates W horizontally with the top surface (front surface) of the substrate W facing upward and the bottom surface (back surface) of the substrate W facing vertically downward. The substrate holding unit 200 also rotates the substrate W while holding it. For example, the top surface (front surface) of the substrate W has a layered structure with a recess formed therein. The detailed structure of the substrate holding unit 200 will be described later.

[0045] The moving mechanism 300 (see FIG. 3) moves the substrate holding part 200. In this embodiment, the moving mechanism 300 rotates the substrate holding part 200. The moving mechanism 300 rotates the substrate holding part 200 about a rotation axis L200 extending in the vertical direction. The rotation axis L200 may be located inside or outside the substrate holding part 200 in a plan view. In this embodiment, the substrate holding part 200 is formed in a generally rectangular shape in a plan view, having a base end 200a and a tip end 200b. The rotation axis L200 is located at the base end 200a of the substrate holding part 200. The tip end 200b of the substrate holding part 200 is located above the substrate W to hold the substrate W.

[0046] The moving mechanism 300 also moves the substrate holding unit 200 in the vertical direction. That is, the moving mechanism 300 raises and lowers the substrate holding unit 200. The moving mechanism 300 includes, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism. The detailed structure of the moving mechanism 300 will be described later.

[0047] The substrate processing unit 10 has one or more processing positions Q for processing the substrate W with a processing liquid. The processing positions Q are provided in the chambers 11. In this embodiment, a plurality of (here, three) processing positions Q are provided in each chamber 11.

[0048] For example, the substrate W is immersed in the processing liquid at at least one of the processing positions Q. In this embodiment, the substrate W is immersed in the processing liquid at each processing position Q. Specifically, the substrate processing unit 10 has an immersion tank 400 disposed at each processing position Q. The immersion tank 400 stores the processing liquid in which the substrate W is immersed.

[0049] The substrate processing unit 10 also has a cleaning position CW for cleaning chuck pins 202 (described later) of the substrate holder 200. The cleaning position CW is provided in the chamber 11. In this embodiment, one cleaning position CW is provided in each chamber 11.

[0050] For example, at the cleaning position CW, the chuck pins 202, which will be described later, are cleaned with a cleaning liquid. Specifically, the substrate processing unit 10 has a cleaning tank 600 disposed at the cleaning position CW. The cleaning tank 600 stores a cleaning liquid in which the tip portions (lower portions) of the chuck pins 202 are immersed. The tip portions (lower portions) of the chuck pins 202 are the portions that come into contact with the substrate W. The cleaning liquid is not particularly limited as long as it can clean the chuck pins 202, and is, for example, a rinse liquid. In this embodiment, the cleaning liquid is deionized water (DIW).

[0051] The substrate processing unit 10 also has a transfer position R. The transfer position R is provided in the chamber 11. In this embodiment, one transfer position R is provided in each chamber 11. The transfer position R is a position where the substrate W is transferred between the center robot CR and the substrate holder 200.

[0052] The transfer position R is disposed opposite the opening 12. Specifically, the transfer position R is located closer to the opening 12 than the processing position Q and the cleaning position CW. The substrate W is carried into the transfer position R through the opening 12. The opening 12 is located between the center robot CR and the transfer position R when the center robot CR is located at a predetermined position (for example, the position shown in FIG. 1).

[0053] The substrate processing unit 10 has a transfer table 150. The transfer table 150 is arranged at a transfer position R. The transfer table 150 is a table for transferring the substrate W between the center robot CR and the substrate holder 200. The transfer table 150 supports the substrate W. The transfer table 150 is an example of the "support member" in the present invention.

[0054] Specifically, the transfer table 150 has a circular plate 150a and multiple (four in this example) protrusions 150b protruding upward from the plate 150a. The multiple protrusions 150b support the lower surface Wb of the substrate W. The multiple protrusions 150b are arranged, for example, on the periphery of the plate 150a at equal angular intervals (90° in this example) around the center of the plate 150a.

[0055] The multiple processing positions Q, cleaning position CW, and transfer position R are located on a concentric circle C200 centered on the pivot axis L200 of the substrate holding unit 200. In other words, the distance from the pivot axis L200 to the multiple processing positions Q, the distance from the pivot axis L200 to the cleaning position CW, and the distance from the pivot axis L200 to the transfer position R are approximately equal. Therefore, by rotating about the pivot axis L200, the substrate holding unit 200 can easily transfer a substrate W to, for example, any of the members at the processing positions Q (here, the immersion tank 400), the member at the cleaning position CW (here, the cleaning tank 600), and the member at the transfer position R (here, the transfer table 150).

[0056] FIG. 2 is a schematic plan view showing the inside of one chamber 11 of the substrate processing apparatus 100 of the first embodiment. As shown in FIG. 2, for example, in each chamber 11, the multiple (here, three) processing positions Q include at least two processing positions Q that process substrates W with different processing liquids. In this embodiment, in each chamber 11, all three processing positions Q process substrates W with processing liquids that are different from one another. For ease of understanding, the three processing positions Q may be referred to as processing position Q1, processing position Q2, and processing position Q3. In this embodiment, processing position Q1, processing position Q2, and processing position Q3 are arranged in clockwise order. In this embodiment, different processing liquids mean that the processing liquids are not the same. In addition, in this embodiment, the same processing liquid means that the processing liquids are, for example, of the same type and composition.

[0057] Specifically, the multiple processing positions Q include a first processing position (e.g., processing position Q1) for processing the substrate W with a first chemical liquid, a second processing position (e.g., processing position Q2) for processing the substrate W with a second chemical liquid different from the first chemical liquid, and a third processing position (e.g., processing position Q3) for processing the substrate W with a rinse liquid.

[0058] The chemical liquid is not particularly limited, but may include, for example, HF (hydrofluoric acid), DHF (dilute hydrofluoric acid), phosphoric acid, SPM (sulfuric acid-hydrogen peroxide mixture), or ozone water. SPM is a sulfuric acid-hydrogen peroxide mixture in which sulfuric acid and hydrogen peroxide are mixed. In this embodiment, the first chemical liquid is phosphoric acid. The second chemical liquid is phosphoric acid having a concentration different from that of the first chemical liquid, or DHF (dilute hydrofluoric acid). The chemical liquid may be, for example, SC1 (a mixture of ammonia water, hydrogen peroxide, and water), or an organic solvent.

[0059] Examples of the rinse liquid include deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, diluted hydrochloric acid water (for example, about 10 ppm to 100 ppm), and reduced water (hydrogen water). In this embodiment, the rinse liquid is deionized water (DIW).

[0060] In this embodiment, the processing position Q1, processing position Q2, transfer position R, processing position Q3, and cleaning position CW are arranged in this order from one side to the other in the X direction. That is, the cleaning position CW and the cleaning tank 600 are arranged at the farthest position from the position (transfer position R) where the substrate W is transferred to and from the center robot CR. In other words, of the transfer position R, processing position Q, and cleaning position CW, the cleaning position CW is located farthest from the opening 12. In this embodiment, the distance from the transfer position R to the cleaning position CW is the same as the distance from the transfer position R to the processing position Q1.

[0061] Next, the substrate processing apparatus 100 of the first embodiment will be described with reference to Fig. 3. Fig. 3 is a block diagram of the substrate processing apparatus 100 of the first embodiment.

[0062] 3, the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the indexer robot IR, the center robot CR, the substrate holder 200, and the movement mechanism 300. Specifically, the control device 101 controls the indexer robot IR, the center robot CR, the substrate holder 200, and the movement mechanism 300 by transmitting control signals to the indexer robot IR, the center robot CR, the substrate holder 200, and the movement mechanism 300.

[0063] The control unit 102 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0064] The control unit 102 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and carries the substrate W into one of the plurality of chambers 11. The center robot CR also receives a processed substrate W from the chamber 11 and carries the substrate W out.

[0065] The control unit 102 controls the substrate holding unit 200 to control the attachment and detachment of the substrate W, the start of rotation of the substrate W, changing of the rotation speed, and stopping of the rotation of the substrate W. For example, the control unit 102 can control the substrate holding unit 200 to change the rotation speed of the substrate holding unit 200. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of an electric motor 204 (described later) of the substrate holding unit 200.

[0066] The control unit 102 controls the moving mechanism 300 to change the angular position in the rotation direction of the substrate holding unit 200. For example, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 around the rotation axis L200, thereby moving the substrate holding unit 200 to three processing positions Q, a cleaning position CW, and a transfer position R.

[0067] The control unit 102 also controls the movement mechanism 300 to change the height position of the substrate holding unit 200. For example, the control unit 102 controls the movement mechanism 300 to move the substrate holding unit 200, thereby moving the substrate W between a first height position P1 (see FIG. 6) and a second height position P2 (see FIG. 5). The first height position P1 is the height position of the substrate W when it is transferred between the center robot CR and the substrate holding unit 200. The second height position P2 is the height position of the substrate W when it is immersed in the processing liquid stored in the immersion tank 400. In other words, when the substrate W is located at the first height position P1, it is in a non-immersed state where the substrate W is located outside the immersion tank 400. When the substrate W is located at the second height position P2, it is in an immersed state where the substrate W is located inside the immersion tank 400 and is immersed in the processing liquid.

[0068] Next, a substrate processing method according to the first embodiment will be described with reference to Fig. 4. Fig. 4 is a flow chart of the substrate processing method according to the first embodiment. The substrate processing method performed by the substrate processing apparatus 100 according to the first embodiment includes steps S101 to S112. Steps S101 to S112 are executed by the control unit 102.

[0069] 4, in step S101, the substrate W is loaded into the chamber 11. Specifically, the control unit 102 controls the center robot CR to load the substrate W supported by the arm of the center robot CR into the chamber 11 and place it on the transfer table 150. Thereafter, the control unit 102 controls the center robot CR to retract the arm from the transfer position R. At this time, the substrate holder 200 is located at a position other than the transfer position R. Also, at this time, the substrate W is loaded into the chamber 11 through the opening 12.

[0070] Next, in step S102, the substrate W is held by the substrate holding part 200. Specifically, the control part 102 controls the moving mechanism 300 to rotate the substrate holding part 200 to the transfer position R. Then, the control part 102 controls the moving mechanism 300 and the substrate holding part 200 to hold the substrate W by the substrate holding part 200. Note that the substrate holding part 200 may be cleaned in advance at the cleaning position CW prior to step S102.

[0071] Next, in step S103, the substrate W is treated with the first chemical liquid. Specifically, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 to the treatment position Q1. Then, the control unit 102 controls the moving mechanism 300 to lower the substrate holding unit 200. As a result, the substrate W is immersed in the first chemical liquid stored in advance in the immersion tank 400. That is, the moving mechanism 300 immerses the substrate W in the first chemical liquid by moving (lowering) the substrate holding unit 200 while the first chemical liquid is stored in the immersion tank 400. In this embodiment, a predetermined amount of the first chemical liquid is stored in the immersion tank 400 before step S102 is performed.

[0072] At this time, in this embodiment, the substrate holder 200 rotates the substrate W, and the moving mechanism 300 immerses the substrate W in the first chemical liquid stored in the immersion tank 400 in advance.

[0073] Then, the control unit 102 controls the substrate holding unit 200 to release the substrate W from the substrate holding unit 200. Thereafter, the control unit 102 controls the moving mechanism 300 to raise the substrate holding unit 200. At this time, the substrate W is immersed in the first chemical liquid.

[0074] Next, in step S104, the substrate holding part 200 is cleaned at the cleaning position CW. Specifically, the control part 102 controls the moving mechanism 300 to rotate the substrate holding part 200 by a predetermined angle. As a result, the substrate holding part 200 moves to the cleaning position CW.

[0075] Then, the control unit 102 controls the moving mechanism 300 to lower the substrate holding unit 200. As a result, the tip portions (lower portions) of chuck pins 202 (described later) of the substrate holding unit 200 are immersed in the cleaning liquid stored in advance in the cleaning tank 600. That is, the moving mechanism 300 moves (lowers) the substrate holding unit 200 in a state in which the cleaning liquid is stored in the cleaning tank 600, thereby immersing the chuck pins 202 (described later) in the processing liquid. In this embodiment, a predetermined amount of cleaning liquid is stored in the cleaning tank 600 before step S104 is performed.

[0076] Thereafter, when a predetermined time has elapsed since the start of the cleaning process on the substrate holding part 200, the control part 102 controls the moving mechanism 300 to raise the substrate holding part 200.

[0077] Next, in step S105, the substrate W is treated with a rinse liquid. Specifically, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 to a treatment position Q1. Then, when a predetermined time has elapsed since the treatment of the substrate W with the first chemical liquid was started in step S103, the control unit 102 controls the moving mechanism 300 and the substrate holding unit 200 to lower the substrate holding unit 200 and cause the substrate holding unit 200 to hold the substrate W. Thereafter, the control unit 102 controls the moving mechanism 300 to raise the substrate holding unit 200 and rotate it to a treatment position Q3.

[0078] Then, the control unit 102 controls the movement mechanism 300 to lower the substrate holding unit 200. As a result, the substrate W is immersed in the rinse liquid stored in advance in the immersion tank 400. That is, the movement mechanism 300 immerses the substrate W in the rinse liquid by moving (lowering) the substrate holding unit 200 while the rinse liquid is stored in the immersion tank 400. In this embodiment, a predetermined amount of rinse liquid is stored in the immersion tank 400 before step S105 is performed.

[0079] Other aspects of the immersion method for the substrate W in step S105 are the same as those in step S103.

[0080] Next, in step S106, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S104.

[0081] Next, in step S107, the substrate W is treated with the second chemical liquid. Specifically, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 to a treatment position Q3. Then, when a predetermined time has elapsed since the treatment of the substrate W with the rinse liquid was started in step S105, the control unit 102 controls the moving mechanism 300 and the substrate holding unit 200 to lower the substrate holding unit 200 and cause the substrate holding unit 200 to hold the substrate W. Thereafter, the control unit 102 controls the moving mechanism 300 to raise the substrate holding unit 200 and rotate it to a treatment position Q2.

[0082] Then, the control unit 102 controls the movement mechanism 300 to lower the substrate holding unit 200. As a result, the substrate W is immersed in the second chemical liquid stored in advance in the immersion tank 400. That is, the movement mechanism 300 immerses the substrate W in the second chemical liquid by moving (lowering) the substrate holding unit 200 while the second chemical liquid is stored in the immersion tank 400. In this embodiment, a predetermined amount of the second chemical liquid is stored in the immersion tank 400 before step S107 is performed.

[0083] Other aspects of the immersion method for the substrate W in step S107 are the same as those in step S103.

[0084] Next, in step S108, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S104.

[0085] Next, in step S109, the substrate W is treated with a rinse liquid. Specifically, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 to a treatment position Q2. Then, when a predetermined time has elapsed since the treatment of the substrate W with the second chemical liquid was started in step S107, the control unit 102 controls the moving mechanism 300 and the substrate holding unit 200 to lower the substrate holding unit 200 and cause the substrate holding unit 200 to hold the substrate W. Thereafter, the control unit 102 controls the moving mechanism 300 to raise the substrate holding unit 200 and rotate it to a treatment position Q3.

[0086] Then, the control unit 102 immerses the substrate W in the rinse liquid in the same manner as in step S105.

[0087] Next, in step S110, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S104.

[0088] Next, in step S111, the substrate W is placed on the transfer table 150. Specifically, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding part 200 to processing position Q3. Then, when a predetermined time has elapsed since the start of processing the substrate W with the rinse liquid in step S109, the control unit 102 controls the moving mechanism 300 and the substrate holding part 200 to lower the substrate holding part 200 and cause the substrate holding part 200 to hold the substrate W. Thereafter, the control unit 102 controls the moving mechanism 300 to raise the substrate holding part 200 and rotate it to the transfer position R.

[0089] Then, the control unit 102 controls the moving mechanism 300 and the substrate holding unit 200 to lower the substrate holding unit 200 and place the substrate W on the transfer table 150. Thereafter, the control unit 102 controls the moving mechanism 300 to retract the substrate holding unit 200 from the transfer position R.

[0090] Next, in step S112, the substrate W is unloaded to the outside of the chamber 11. Specifically, the control unit 102 controls the center robot CR to hold the substrate W placed on the transfer table 150 and unload the substrate W to the outside of the chamber 11.

[0091] This completes the processing of the substrate W. The substrate holder 200 may also be cleaned at the cleaning position CW after step S112.

[0092] In this embodiment, as described above, the moving mechanism 300 moves the substrate holder 200 within the chamber 11 between the processing position Q, where the substrate W is processed with a processing liquid, and the cleaning position CW, where the chuck pins 202 are cleaned. Therefore, the substrate W can be held by the chuck pins 202 after the chuck pins 202 are cleaned at the cleaning position CW. This makes it possible to prevent particles and / or chemicals from adhering to the substrate W via the chuck pins 202. As a result, contamination of the substrate W can be prevented.

[0093] As described above, the substrate processing apparatus 100 also includes an immersion tank 400 that stores a processing liquid and immerses the substrate W in the processing liquid. Therefore, when processing the substrate W with the processing liquid, there is no need to continuously supply the processing liquid to the substrate W, and therefore, even when a long processing time is required, an increase in the amount of processing liquid consumed can be suppressed. Furthermore, since there is no need to continuously supply the processing liquid to the substrate W, even when, for example, processing with the same processing liquid is performed in multiple chambers 11 at the same time, it is possible to suppress overlapping of the timing at which the processing liquid is supplied from the processing liquid cabinet (not shown). Therefore, the amount of liquid delivered per unit time from the processing liquid cabinet can be suppressed from increasing, and the processing liquid cabinet can be made smaller.

[0094] Furthermore, since the substrates W are immersed one by one in the immersion bath 400 for processing, it is possible to prevent particles from adhering (transferring) to one substrate W from another.

[0095] As described above, the cleaning tank 600 is provided to store the cleaning liquid and to immerse the chuck pins 202 that hold the substrate W in the cleaning liquid. This allows particles and / or chemicals adhering to the chuck pins 202 to be removed. This allows the substrate W to be held by clean chuck pins 202, thereby preventing contamination of the substrate W. Furthermore, for example, mixing of multiple chemicals in the immersion tank 400 can be prevented.

[0096] As described above, the moving mechanism 300 moves the substrate holding part 200 between a plurality of processing positions Q. Therefore, it is possible to reduce the number of substrate holding parts 200 compared to, for example, a case where a substrate holding part is provided for each processing position Q. Furthermore, since the number of substrate holding parts 200 can be reduced, it is possible to prevent the substrate processing apparatus 100 from becoming larger.

[0097] Furthermore, there are multiple processing positions Q within one chamber 11. Therefore, it is possible to perform a variety of processes compared to when there is only one processing position Q within one chamber 11. For example, as described above, one substrate W can be processed at multiple processing positions Q. Furthermore, for example, it is also possible to process two substrates W in parallel, as will be described later.

[0098] As described above, the substrate W is treated with a first treatment liquid (e.g., a first chemical liquid) at the first treatment position (e.g., treatment position Q1), and then treated with a second treatment liquid (e.g., a second chemical liquid) different from the first treatment liquid at the second treatment position (e.g., treatment position Q2). This allows the substrate W to be treated with at least two treatment liquids in one chamber 11. Furthermore, unlike the case where treatment with the first treatment liquid and treatment with the second treatment liquid are performed at one treatment position Q, the treatment liquid can remain stored in the immersion tank 400. In other words, it is not necessary to replace the treatment liquid in the immersion tank 400 every time the substrate W is immersed. This further reduces the amount of treatment liquid consumed.

[0099] As described above, the substrate W is treated with the first chemical liquid at the first treatment position (e.g., treatment position Q1), the substrate W is treated with the second chemical liquid at the second treatment position (e.g., treatment position Q2), and the substrate W is treated with the rinse liquid at the third treatment position (e.g., treatment position Q3). Therefore, the substrate W can be treated with at least three treatment liquids in one chamber 11. Furthermore, both the substrate W treated with the first chemical liquid and the substrate W treated with the second chemical liquid are rinsed at the same treatment position Q3, which prevents the number of positions (e.g., treatment positions Q3) from increasing.

[0100] Furthermore, as described above, the chuck pin 202 is cleaned at the cleaning position CW after coming into contact with the first chemical liquid and before coming into contact with the second chemical liquid. Therefore, the first chemical liquid adhering to the chuck pin 202 can be removed, thereby preventing the first chemical liquid from mixing with the second chemical liquid.

[0101] As described above, the chamber 11 is provided with a transfer position R where the transfer table 150 that supports the substrate W is disposed. Therefore, the substrate holding part 200 does not need to directly transfer the substrate W to or receive it from the center robot CR. Therefore, even while the substrate holding part 200 is operating, the center robot CR can transfer the substrate W to or receive it from the transfer table 150. Furthermore, even while the center robot CR is operating, the substrate holding part 200 can transfer the substrate W to or receive it from the transfer table 150. Therefore, when transferring the substrate W between the center robot CR and the substrate holding part 200, waiting time for the center robot CR or the substrate holding part 200 can be reduced.

[0102] As described above, the moving mechanism 300 moves the substrate holding part 200 around the pivot axis L200, the processing position Q and the cleaning position CW are located on a concentric circle C200 centered around the pivot axis L200, and the moving mechanism 300 moves the substrate holding part 200 between the processing position Q and the cleaning position CW within the chamber 11. Therefore, the substrate holding part 200 can be easily moved between the processing position Q and the cleaning position CW.

[0103] Furthermore, as described above, of the processing position Q and the cleaning position CW, the cleaning position CW is located farthest from the opening 12. Therefore, it is possible to prevent the processing position Q from being located farthest from the opening 12. This prevents the distance from the position where the substrate W is processed to the opening 12 from becoming long, and therefore prevents the transport distance of the substrate W from becoming long. Therefore, it is possible to prevent the time required for processing from becoming long.

[0104] Furthermore, the chemical treatment and the rinse treatment are carried out at separate treatment positions, eliminating the need to replace the treatment liquid stored in the immersion tank 400 each time a treatment is carried out.

[0105] Next, the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment will be described with reference to Figures 5 and 6. Figure 5 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment. Figure 6 is a schematic diagram showing the structure around the substrate holding part 200 and the moving mechanism 300 of the substrate processing apparatus 100 of the first embodiment. Note that in Figure 5 and subsequent figures, due to limitations on drawing size, the various supply parts and discharge parts may be entirely drawn inside the chamber 11, but some of the various supply parts and discharge parts are located outside the chamber 11.

[0106] 5, the substrate processing unit 10 of the first embodiment has a plurality of processing positions Q, as described above. In this embodiment, the plurality of processing positions Q have the same configuration. Therefore, only one processing position Q will be described, and the description of the remaining processing positions Q will be omitted.

[0107] Specifically, the substrate processing unit 10 includes the chamber 11, substrate holder 200, moving mechanism 300, and immersion tank 400 described above, as well as a blower unit 14, a cup 450, and an immersion tank support 500. For example, one chamber 11, one substrate holder 200, one moving mechanism 300, one blower unit 14, and one immersion tank support 500 are provided for one substrate processing unit 10. On the other hand, one immersion tank 400 and one cup 450 are provided for one processing position Q. The blower unit 14 is controlled by the control unit 102.

[0108] The blower unit 14 is disposed at the top or upper portion of the chamber 11. For example, the blower unit 14 is disposed on the ceiling of the chamber 11. The blower unit 14 sends air into the chamber 11. The blower unit 14 includes, for example, a fan filter unit (FFU). A downflow (descending flow) is formed in the chamber 11 by the blower unit 14 and an exhaust device (not shown).

[0109] The immersion tank 400 stores a processing liquid. Specifically, the immersion tank 400 is a container-like tank with an open top, and the processing liquid is stored in an inner space 400a (see FIG. 6) of the immersion tank 400. The immersion tank 400 also accommodates a substrate W. The substrate W is immersed in the processing liquid stored in the immersion tank 400. As a result, the substrate W is processed by the processing liquid.

[0110] The immersion tank 400 has, for example, a substantially circular shape in a plan view. The immersion tank 400 may have a cylindrical shape with a bottom. The immersion tank 400 is supported in a horizontal position by the immersion tank support part 500. The immersion tank 400 may also be installed in a horizontal position on the bottom surface (bottom wall) of the chamber 11. For example, the immersion tank 400 may be made of silicon carbide (SiC) or stainless steel. Alternatively, the immersion tank 400 may be made of aluminum coated with a fluororesin. The fluororesin may include, for example, polytetrafluoroethylene (PTFE).

[0111] As shown in FIG. 6, the immersion tank 400 has a bottom wall 401 and a side wall 402. The bottom wall 401 may have a circular shape in a plan view. The side wall 402 is connected to the bottom wall 401. The side wall 402 may be connected to an end (peripheral edge) of the bottom wall 401. The side wall 402 extends upward from the bottom wall 401. The bottom wall 401 and the side wall 402 form an inner space 400a of the immersion tank 400. In other words, the inner space 400a is a space surrounded by the bottom wall 401 and the side wall 402.

[0112] More specifically, the side wall 402 has an inner circumferential surface 402a, an outer circumferential surface 402b, and an upper surface 402c. The inner circumferential surface 402a forms an inner space 400a. The outer circumferential surface 402b is disposed outside the inner circumferential surface 402a. The upper surface 402c connects the upper ends of the inner circumferential surface 402a and the outer circumferential surface 402b. The upper surface 402c is inclined downward toward the outside.

[0113] In the first embodiment, a support table 410 is provided on the bottom wall 401 of the immersion tank 400. The support table 410 supports the substrate W. The support table 410 protrudes above the upper surface of the bottom wall 401. The support table 410 is not particularly limited, but may have, for example, a cylindrical shape. Furthermore, a plurality of support tables 410 are provided on the bottom wall 401. The support table 410 and the bottom wall 401 may be integrally formed. In other words, the support table 410 and the bottom wall 401 may be a single member.

[0114] The cup 450 is disposed around the immersion tank 400. In this embodiment, the cup 450 and the immersion tank 400 are integrally formed. In other words, the cup 450 and the immersion tank 400 are a single member.

[0115] The cup 450 is disposed outside the side wall 402 of the immersion tank 400, at a predetermined distance from the side wall 402. Specifically, the cup 450 has a bottom wall 451 and a side wall 452. The bottom wall 451 is connected to the bottom wall 401 or the side wall 402 of the immersion tank 400. The side wall 452 is connected to the peripheral edge of the bottom wall 451. The side wall 452 has a lower wall portion 452a and an upper wall portion 452b. The lower wall portion 452a extends upward from the bottom wall 451. The upper wall portion 452b slopes inward and upward from the upper end of the lower wall portion 452a. The bottom wall 451 and side wall 452 of the cup 450, together with the side wall 402 of the immersion tank 400, form an inner space 450a of the cup 450.

[0116] The cup 450 collects the processing liquid scattered around the substrate W due to, for example, the rotation of the substrate W. In addition, an exhaust device (not shown) may be connected to the cup 450, and the gas in the inner space 450a may be exhausted to the outside of the chamber 11.

[0117] The immersion tank support unit 500 supports the immersion tank 400. In this embodiment, the immersion tank support unit 500 supports the immersion tank 400 and the cup 450. The immersion tank support unit 500 has a support plate 502. The support plate 502 has a plate shape and is arranged in a horizontal position. The support plate 502 may be fixed, for example, to the side wall of the chamber 11 or to the upper surface of a support column or the like of the immersion tank support unit 500. In this embodiment, the support plate 502 is fixed to the side wall of the chamber 11 and divides the interior of the chamber 11 into an upper space and a lower space. The support plate 502 supports the immersion tank 400 in a horizontal position. A through hole 502a is formed at a predetermined position of the support plate 502, penetrating the support plate 502 in the thickness direction. A screw shaft 311 (described later) of the movement mechanism 300 is inserted into the through hole 502a.

[0118] 5, the substrate processing apparatus 100 includes a first supply unit 30, a second supply unit 40, a first discharge unit 50, and a second discharge unit 60. The first supply unit 30, the second supply unit 40, the first discharge unit 50, and the second discharge unit 60 are controlled by a control unit 102.

[0119] The first supply unit 30 supplies the processing liquid to the immersion tank 400. The first supply unit 30 supplies the processing liquid from above the immersion tank 400. In this embodiment, the first supply unit 30 is capable of ejecting the processing liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200.

[0120] Specifically, first supply unit 30 has first chemical liquid pipe 31, second chemical liquid pipe 32, rinse liquid pipe 33, common pipe , on-off valve 35, on-off valve , on-off valve 37, and nozzle .

[0121] First chemical liquid pipe 31, second chemical liquid pipe 32, rinse liquid pipe 33, and common pipe 34 are tubular members through which the processing liquid flows.

[0122] The first chemical liquid is supplied from a supply source to first chemical liquid piping 31. The downstream end of first chemical liquid piping 31 is connected to common piping 34. Opening / closing valve 35 is provided in first chemical liquid piping 31 and opens and closes the flow path within first chemical liquid piping 31. Opening / closing valve 35 adjusts the opening degree of first chemical liquid piping 31 to adjust the flow rate of the first chemical liquid supplied to first chemical liquid piping 31.

[0123] The second chemical liquid is supplied from a supply source to second chemical liquid pipe 32. The downstream end of second chemical liquid pipe 32 is connected to common pipe 34. Opening / closing valve 36 is provided in second chemical liquid pipe 32 and opens and closes the flow path within second chemical liquid pipe 32. Opening / closing valve 36 adjusts the opening degree of second chemical liquid pipe 32 to adjust the flow rate of the second chemical liquid supplied to second chemical liquid pipe 32.

[0124] A rinse liquid is supplied from a supply source to the rinse liquid pipe 33. The downstream end of the rinse liquid pipe 33 is connected to a common pipe 34. An on-off valve 37 is provided in the rinse liquid pipe 33 and opens and closes the flow path in the rinse liquid pipe 33. The on-off valve 37 adjusts the opening of the rinse liquid pipe 33 to adjust the flow rate of the rinse liquid supplied to the rinse liquid pipe 33.

[0125] Each of the opening / closing valves 35 to 37 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0126] The downstream end of the common pipe is connected to the nozzle 38. The common pipe distributes the processing liquid to the nozzle .

[0127] The nozzle 38 discharges the processing liquid. In this embodiment, the nozzle 38 discharges the processing liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200. The nozzle 38 can also discharge the processing liquid into the immersion bath 400 when the substrate holding unit 200 is not holding a substrate W. The nozzle 38 is provided on a spin base 201 (described later) of the substrate holding unit 200. The nozzle 38 is disposed, for example, in the center of the spin base 201. In this embodiment, the nozzle 38 is disposed on the rotation axis AX1 of the spin base 201. The nozzle 38 may be formed separately from the spin base 201 or may be formed as part of the spin base 201. In addition, when the nozzle 38 is formed separately from the spin base 201, for example, a through-hole extending in the vertical direction may be formed in the center of the spin base 201, and the nozzle 38 may be disposed in the through-hole of the spin base 201. In this case, the nozzle 38 may be fixed to the housing 205.

[0128] The second supply unit 40 supplies the processing liquid to the immersion tank 400. The second supply unit 40 supplies the processing liquid from below the immersion tank 400. In this embodiment, the second supply unit 40 is capable of ejecting the processing liquid toward the lower surface Wb of the substrate W held by the substrate holding unit 200.

[0129] Specifically, second supply unit 40 has first chemical liquid pipe 41, second chemical liquid pipe 42, rinse liquid pipe 43, common pipe 44, on-off valve 45, on-off valve 46, on-off valve 47, and nozzle 48.

[0130] First chemical liquid pipe 41, second chemical liquid pipe 42, rinse liquid pipe 43, and common pipe 44 are annular members through which the processing liquid flows.

[0131] The first chemical liquid is supplied from a supply source to first chemical liquid pipe 41. The downstream end of first chemical liquid pipe 41 is connected to common pipe 44. Opening / closing valve 45 is provided in first chemical liquid pipe 41 and opens and closes the flow path within first chemical liquid pipe 41. Opening / closing valve 45 adjusts the opening degree of first chemical liquid pipe 41 to adjust the flow rate of the first chemical liquid supplied to first chemical liquid pipe 41.

[0132] The second chemical liquid is supplied from a supply source to second chemical liquid pipe 42. The downstream end of second chemical liquid pipe 42 is connected to common pipe 44. Opening / closing valve 46 is provided in second chemical liquid pipe 42 and opens and closes the flow path within second chemical liquid pipe 42. Opening / closing valve 46 adjusts the opening degree of second chemical liquid pipe 42 to adjust the flow rate of the second chemical liquid supplied to second chemical liquid pipe 42.

[0133] A rinse liquid is supplied from a supply source to the rinse liquid pipe 43. The downstream end of the rinse liquid pipe 43 is connected to a common pipe 44. An open / close valve 47 is provided in the rinse liquid pipe 43 and opens and closes the flow path in the rinse liquid pipe 43. The open / close valve 47 adjusts the opening of the rinse liquid pipe 43 to adjust the flow rate of the rinse liquid supplied to the rinse liquid pipe 43.

[0134] Each of the opening / closing valves 45 to 47 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0135] The downstream end of the common pipe 44 is connected to the nozzle 48. The common pipe 44 distributes the processing liquid to the nozzle 48.

[0136] The nozzle 48 ejects the processing liquid. In this embodiment, the nozzle 48 ejects the processing liquid toward the lower surface Wb of the substrate W held by the substrate holding part 200. The nozzle 48 can also eject the processing liquid into the immersion tank 400 when the substrate holding part 200 is not holding the substrate W. The nozzle 48 is disposed in the center of the immersion tank 400. The tip (upper end) of the nozzle 48 protrudes upward from the upper surface of the bottom wall 401 of the immersion tank 400. The nozzle 48 may be formed separately from the immersion tank 400, or may be formed as part of the immersion tank 400.

[0137] The first discharge unit 50 discharges the treatment liquid stored in the immersion tank 400 to the outside of the immersion tank 400. In this embodiment, the first discharge unit 50 discharges the treatment liquid stored in the immersion tank 400 to the outside of the chamber 11.

[0138] Specifically, the first discharge unit 50 has a common pipe 51, a drainage pipe 52, a return pipe 53, an on-off valve 54, and an on-off valve 55. The common pipe 51, the drainage pipe 52, and the return pipe 53 are tubular members through which the treatment liquid flows.

[0139] The upstream end of the common pipe 51 is connected to the bottom wall 401 of the immersion tank 400. The common pipe 51 is in communication with the inner space 400a of the immersion tank 400. The processing liquid of the immersion tank 400 flows into the common pipe 51. The downstream end of the common pipe 51 is connected to a drain pipe 52 and a return pipe 53.

[0140] The drainage pipe 52 drains the processing liquid from the common pipe 51. For example, the drainage pipe 52 circulates the processing liquid from the common pipe 51 to a drain tank (not shown). The opening / closing valve 54 is provided in the drainage pipe 52 and opens and closes the flow path in the drainage pipe 52.

[0141] The return pipe 53 returns the processing liquid from the common pipe 51 to a processing liquid cabinet (not shown) provided in the substrate processing apparatus 100. The processing liquid returned to the processing liquid cabinet is reused. This reduces the amount of processing liquid used, thereby reducing the environmental impact. The opening / closing valve 55 is provided in the return pipe 53 and opens and closes the flow path in the return pipe 53.

[0142] In addition, each of the opening / closing valves 54 and 55 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0143] The second discharge unit 60 discharges the processing liquid in the cup 450 to the outside of the cup 450. In this embodiment, the second discharge unit 60 discharges the processing liquid in the cup 450 to the outside of the chamber 11.

[0144] Specifically, the second discharge unit 60 has a drainage pipe 61 and an on-off valve 62. The drainage pipe 61 is a tubular member through which the treatment liquid flows.

[0145] The drainage pipe 61 drains the processing liquid inside the cup 450. Specifically, the upstream end of the drainage pipe 61 is connected to the bottom wall 451 of the cup 450. The drainage pipe 61 is in communication with the inner space 450a of the cup 450. The processing liquid inside the cup 450 flows into the drainage pipe 61. For example, the drainage pipe 61 distributes the processing liquid to a drain tank (not shown). The opening / closing valve 62 is provided in the drainage pipe 61 and opens and closes a flow path inside the drainage pipe 61. The opening / closing valve 62 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0146] Next, the substrate holder 200 and the moving mechanism 300 will be further described with reference to FIG.

[0147] As shown in Fig. 6, the substrate holding unit 200 has a spin base 201, chuck pins 202, a shaft 203, an electric motor 204, and a housing 205. The spin base 201 is an example of the "base" of the present invention. The chuck pins 202 are an example of the "contact member" of the present invention. The electric motor 204 is an example of the "rotation drive unit" of the present invention.

[0148] The chuck pins 202 are provided on a spin base 201 disposed above the substrate W. The chuck pins 202 come into contact with the substrate W to chuck the substrate W. Typically, a plurality of chuck pins 202 are provided on the spin base 201. The chuck pins 202 protrude downward from the lower surface of the spin base 201. The chuck pins 202 have a pin-shaped portion extending in the vertical direction and a contact portion provided at the lower end of the pin-shaped portion and contacting the peripheral edge of the substrate W. Each chuck pin 202 is rotatable about a rotation axis AX2 (the central axis of each pin-shaped portion) extending in the vertical direction. The chuck pins 202 rotate about the rotation axis AX2 between a holding position where the substrate W is held and a non-holding position where the substrate W is not held.

[0149] The shaft 203 is a hollow shaft. The shaft 203 extends vertically along the rotation axis AX1. The spin base 201 is coupled to the lower end of the shaft 203. The substrate W is located below the spin base 201.

[0150] The spin base 201 is disk-shaped and supports the substrate W horizontally. The shaft 203 extends upward from the center of the spin base 201. The electric motor 204 applies a rotational force to the shaft 203. The electric motor 204 rotates the shaft 203 in a rotational direction, thereby rotating the substrate W and the spin base 201 around the rotation axis AX1. The housing 205 is substantially box-shaped and accommodates a portion of the shaft 203 and the electric motor 204. The electric motor 204 is attached to a predetermined position in the housing 205.

[0151] The substrate holder 200 also has a chuck drive mechanism 210 that rotates the multiple chuck pins 202. The chuck drive mechanism 210 is configured using known technology (for example, JP 2016-25186 A), and will therefore only be briefly described.

[0152] The chuck drive mechanism 210 has a drive magnet 211, a driven magnet 212, and a lift plate 213. The drive magnet 211 is disposed within the housing 205. The drive magnet 211 is disposed around one circumference so as to surround the periphery of the rotation axis AX1. The drive magnet 211 moves up and down relative to the housing 205 by an elevating mechanism (not shown). The driven magnet 212 and the lift plate 213 are disposed within the spin base 201. The driven magnet 212 is fixed to the lift plate 213. The lift plate 213 is biased upward by a biasing member (not shown). The driven magnet 212 and the lift plate 213 are disposed around one circumference so as to surround the periphery of the rotation axis AX1. The driven magnet 212 is disposed directly below the drive magnet 211. The driven magnet 212 is also disposed so as to repel the drive magnet 211. Specifically, the driven magnet 212 and the drive magnet 211 are arranged so that the surfaces facing each other have the same polarity. The lifting plate 213 is provided with a cam or link mechanism that rotates the chuck pins 202 between a holding position and a non-holding position. The drive magnet 211 moves up and down, causing the driven magnet 212 and the lifting plate 213 to move up and down. As a result, the chuck pins 202 rotate between the holding position and the non-holding position, and the substrate W is held by the chuck pins 202 or the hold thereof is released.

[0153] The moving mechanism 300 includes a lifting mechanism 310 that moves the substrate holding part 200 in the vertical direction, and a turning mechanism 320 that turns the substrate holding part 200. The lifting mechanism 310 includes, for example, a screw shaft 311, a nut 312, an electric motor 313, and a drive belt 314.

[0154] The screw shaft 311 and the nut 312 constitute a ball screw mechanism. The screw shaft 311 extends vertically. The upper end of the screw shaft 311 is fixed to the housing 205 of the substrate holder 200. A screw groove is formed on the outer circumferential surface of the screw shaft 311.

[0155] The nut 312 has balls that come into contact with the thread groove of the screw shaft 311. The screw shaft 311 moves in the vertical direction as the nut 312 rotates about the central axis AX3 of the screw shaft 311. In this embodiment, the central axis AX3 coincides with the rotation axis L200.

[0156] The electric motor 313 has, for example, a motor body 313a that can rotate forward and backward, a motor shaft 313b, and a motor pulley 313c. The motor body 313a is fixed to a motor support member 321 (described later) of the turning mechanism 320. The motor pulley 313c is fixed to the tip of the motor shaft 313b.

[0157] The drive belt 314 is wound around the outer circumferential surfaces of the motor pulley 313c and the nut 312. The drive belt 314 transmits the rotational force of the motor pulley 313c to the nut 312. As a result, when the motor pulley 313c rotates, the nut 312 rotates. The screw shaft 311 is configured not to move in the horizontal direction.

[0158] In this movement mechanism 300, when the electric motor 313 of the lifting mechanism 310 is driven, the driving force of the electric motor 313 is transmitted to the nut 312 via the drive belt 314. Then, as the nut 312 rotates, the screw shaft 311 moves up and down in the vertical direction.

[0159] The turning mechanism 320 includes, for example, a motor support member 321 , an electric motor 322 , and a drive belt 323 .

[0160] The motor support member 321 supports the electric motor 313 of the lifting mechanism 310. The motor support member 321 has a support plate 321a and a pulley 321b fixed to the support plate 321a. The screw shaft 311 is inserted through the center of the pulley 321b. The motor support member 321 rotates (orbits) together with the electric motor 313 about the central axis AX3 of the screw shaft 311.

[0161] The electric motor 322 has, for example, a motor body 322a, a motor shaft 322b, and a motor pulley 322c. The motor body 322a is fixed to the support plate 502. The motor pulley 322c is fixed to the tip of the motor shaft 322b.

[0162] The drive belt 323 is wound around the motor pulley 322c and the pulley 321b of the motor support member 321. The drive belt 323 transmits the rotational force of the motor pulley 322c to the motor support member 321. As a result, when the motor pulley 322c rotates, the motor support member 321 rotates about the central axis AX3 (rotation axis L200).

[0163] In this moving mechanism 300, when the electric motor 322 is driven, the driving force of the electric motor 322 is transmitted to the motor support member 321 via the drive belt 323. Then, as the motor support member 321 rotates, the lifting mechanism 310 and the substrate holding part 200 rotate about the central axis AX3 (rotation axis L200).

[0164] Furthermore, movement mechanism 300 has shaft cover 330. Shaft cover 330 has bellows portion 330a that is expandable and contractible in the vertical direction, upper plate 330b that attaches the upper end of bellows portion 330a to housing 205 of substrate holding unit 200, and lower plate 330c that attaches the lower end of bellows portion 330a to support plate 502.

[0165] Next, the method of immersing the substrate W in the processing liquid (steps S103, S105, S107, and S109) will be described in detail with reference to Figures 7 to 10. Here, the method of immersing the substrate W in step S103 will be described, but the method of immersing the substrate W in steps S105, S107, and S109 is also similar. Figure 7 is a flow diagram showing the method of immersing the substrate W in the processing liquid. Figures 8 to 10 are schematic diagrams for explaining the method of immersing the substrate W in the processing liquid.

[0166] 7, in step S201, the substrate W is placed above the immersion tank 400 (see FIG. 8). Specifically, the control unit 102 controls the movement mechanism 300 to position the substrate holder 200 above the immersion tank 400. Note that the opening and closing valves 35 to 37, 45 to 47, 54, and 55 are in a closed state, and the opening and closing valve 62 is in an open state.

[0167] Next, in step S202, the substrate W is rotated. Specifically, the control unit 102 controls the substrate holding unit 200 to rotate the spin base 201. This causes the substrate W to start rotating.

[0168] Next, in step S203, the substrate W is lowered. Specifically, the control unit 102 controls the moving mechanism 300 to start lowering the substrate holder 200. As a result, the substrate W is lowered while rotating.

[0169] 9, the processing liquid (here, the first chemical liquid) is discharged. Specifically, the control unit 102 switches at least one of the on-off valve 35 and the on-off valve 45 from a closed state to an open state. As a result, the first chemical liquid is discharged from at least one of the nozzle 38 and the nozzle 48 toward the substrate W. In this embodiment, the control unit 102 switches the on-off valve 35 and the on-off valve 45 from a closed state to an open state. As a result, the first chemical liquid is discharged from the nozzle 38 and the nozzle 48 toward the substrate W.

[0170] As described above, in this embodiment, while at least one of the first supply unit 30 and the second supply unit 40 supplies the first chemical liquid toward the substrate W, the movement mechanism 300 immerses the substrate W in the first chemical liquid stored in advance in the immersion tank 400. In this embodiment, while both the first supply unit 30 and the second supply unit 40 supply the first chemical liquid toward the substrate W, the movement mechanism 300 immerses the substrate W in the first chemical liquid stored in advance in the immersion tank 400. In step S204, it is preferable that at least the second supply unit 40 supplies the first chemical liquid toward the substrate W.

[0171] Next, in step S205, the substrate W is immersed in the processing liquid (here, the first chemical liquid). That is, the upper surface Wa of the substrate W is positioned below the liquid surface of the processing liquid (here, the first chemical liquid). Then, the control unit 102 controls the substrate holding unit 200 to stop the rotation of the spin base 201, stop the descent of the substrate holding unit 200, and switch the opening / closing valve 35 and the opening / closing valve 45 from the open state to the closed state. As a result, the rotation of the substrate W stops and the discharge of the processing liquid stops.

[0172] Next, in step S206, the control unit 102 releases the holding of the substrate W. Specifically, the control unit 102 controls the substrate holding unit 200 to release the holding of the substrate W. As a result, the substrate W is placed on the support table 410.

[0173] Next, in step S207, the substrate holding part 200 is raised as shown in Fig. 10. Specifically, the control part 102 controls the moving mechanism 300 to raise the substrate holding part 200.

[0174] In this embodiment, as described above, the immersion tank 400 is provided with a support table 410 that supports the substrate W. Therefore, by placing the substrate W on the support table 410, the substrate holding unit 200 does not need to continue to hold the substrate W during processing. This allows the substrate holding unit 200 to be cleaned in parallel with the processing of the substrate W. Furthermore, by providing the support table 410, the substrate holding unit 200 can, for example, move to another processing position Q to hold or transport another substrate W, as will be described later.

[0175] As described above, the substrate holding unit 200 has the spin base 201 disposed above the substrate W and a plurality of chuck pins 202 that protrude downward from the spin base 201 and hold the periphery of the substrate W. Therefore, the substrate W can be held from above, and the substrate W can be easily immersed in the processing liquid in the immersion tank 400.

[0176] Furthermore, the first supply unit 30 has a nozzle 38 that ejects the processing liquid toward the upper surface Wa of the substrate W, and the nozzle 38 is provided on the spin base 201. Therefore, in a configuration in which the spin base 201 is provided above the substrate W, the processing liquid can be easily ejected onto the upper surface Wa of the substrate W.

[0177] Furthermore, while the substrate holder 200 is rotating the substrate W, the movement mechanism 300 immerses the substrate W in the processing liquid stored in advance in the immersion tank 400. Therefore, air present between the lower surface Wb of the substrate W and the surface of the processing liquid is easily discharged radially outward from the substrate W. This makes it easy to immerse the substrate W in the processing liquid.

[0178] Furthermore, while the second supply unit 40 is supplying the processing liquid toward the substrate W, the movement mechanism 300 immerses the substrate W in the processing liquid stored in advance in the immersion tank 400. Therefore, air present between the lower surface Wb of the substrate W and the surface of the processing liquid is easily discharged radially outward from the substrate W by the processing liquid supplied from the second supply unit 40. This makes it easier to immerse the substrate W in the processing liquid.

[0179] Furthermore, while the first supply unit 30 is supplying the processing liquid toward the substrate W, the movement mechanism 300 immerses the substrate W in the processing liquid stored in advance in the immersion tank 400. Therefore, the upper surface Wa of the substrate W is wetted with the processing liquid supplied from the first supply unit 30, and the processing liquid stored in the immersion tank 400 is more likely to flow onto the upper surface Wa of the substrate W. Furthermore, since the timing at which the processing liquid comes into contact with the upper surface Wa of the substrate W (the timing at which processing starts) is earlier, the takt time can be shortened.

[0180] Next, the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment will be further described with reference to Fig. 11. Fig. 11 is a schematic view showing the structure of the cleaning tank 600 and its surroundings in the substrate processing apparatus 100.

[0181] 11, the cleaning tank 600 is a tank for cleaning the chuck pins 202 of the substrate holder 200. The cleaning tank 600 stores a rinse liquid (DIW in this example) which is a cleaning liquid.

[0182] The cleaning tank 600 stores a cleaning liquid. The cleaning tank 600 is a container-like tank with an open top, and accommodates the tip portions (contact portions) of the chuck pins 202. The chuck pins 202 of the substrate holding unit 200 are immersed in the cleaning liquid stored in the cleaning tank 600 without holding a substrate W. As a result, the chuck pins 202 are cleaned by the cleaning liquid. In this embodiment, the substrate holding unit 200 rotates the spin base 201 about the rotation axis AX1 with the chuck pins 202 immersed in the cleaning liquid. That is, in the above steps S104, S106, S108, and S110, the substrate holding unit 200 rotates the spin base 201 with the chuck pins 202 immersed in the cleaning liquid. Therefore, the cleaning effect on the chuck pins 202 can be improved.

[0183] The cleaning tank 600 has a structure similar to that of the immersion tank 400. Specifically, the cleaning tank 600 has a bottom wall 601 and a side wall 602. The configurations of the bottom wall 601 and the side wall 602 are similar to the configurations of the bottom wall 401 and the side wall 402 of the immersion tank 400.

[0184] The substrate processing apparatus 100 includes a third supply unit 170. The third supply unit 170 is controlled by the control unit .

[0185] The third supply unit 170 supplies the rinse liquid to the cleaning tank 600. The third supply unit 170 supplies the rinse liquid from below the cleaning tank 600.

[0186] The third supply unit 170 has a rinse liquid pipe 171, an on-off valve 172, and a nozzle 178. The nozzle 178 is connected to the bottom wall 601 of the cleaning tank 600, and discharges the rinse liquid into the interior of the cleaning tank 600. Other configurations of the rinse liquid pipe 171, the on-off valve 172, and the nozzle 178 are similar to, for example, the configurations of the rinse liquid pipe 43, the on-off valve 47, and the nozzle 48.

[0187] The substrate processing apparatus 100 also includes a second discharge unit 60. The second discharge unit 60 is connected to the lower part of the cleaning tank 600. The second discharge unit 60 discharges the rinse liquid in the cleaning tank 600 to the outside of the cleaning tank 600.

[0188] In this embodiment, as described above, the electric motor 204 of the substrate holder 200 rotates the chuck pins 202 while the chuck pins 202 are immersed in the cleaning liquid. Therefore, the cleaning effect on the chuck pins 202 can be improved.

[0189] In the first embodiment, an example has been described in which the chuck pins 202 are cleaned every time the substrate W is immersed in the chemical liquids (first chemical liquid, second chemical liquid) and the rinse liquid, but the present invention is not limited to this. For example, the chuck pins 202 may be cleaned only after the substrate W is immersed in the chemical liquids. Also, for example, the chuck pins 202 may be cleaned only after the substrate W is immersed in the rinse liquid. Also, for example, the chuck pins 202 may be cleaned every time processing of one substrate W is completed.

[0190] (Second embodiment) Next, a substrate processing apparatus 100 according to a second embodiment of the present invention will be described with reference to Figures 12 to 14. Figure 12 is a schematic plan view of the substrate processing apparatus 100 of the second embodiment. Figure 13 is a schematic plan view showing the inside of one chamber 11 of the substrate processing apparatus 100 of the second embodiment. Unlike the first embodiment, the second embodiment describes an example in which the substrate holding unit 200 can rotate once around a rotation axis L200.

[0191] 12, in this embodiment, the chamber 11 has at least two (two in this case) openings 12. At least two (two in this case) shutters 13 are provided, and the number of shutters 13 is the same as the number of openings 12. Each opening 12 is located between the center robot CR and the processing position Q when the center robot CR is placed at a predetermined position (for example, the position shown in FIG. 12).

[0192] In this embodiment, the substrate W is loaded into or unloaded from each opening 12. Specifically, one of the two openings 12 is a first opening 12a, and the other of the two openings 12 is a second opening 12b. The first opening 12a is an inlet through which the substrate W is loaded from the outside of the chamber 11 to the inside. The second opening 12b is an outlet through which the substrate W is unloaded from the inside of the chamber 11 to the outside.

[0193] 12 and 13, in this embodiment, similar to the first embodiment, a plurality of (here, three) processing positions Q (processing positions Q1, Q2, and Q3) and a cleaning position CW are provided in each chamber 11. Note that in this embodiment, a transfer position R is not provided.

[0194] Processing position Q1, processing position Q2, cleaning position CW, and processing position Q3 are arranged in this order in a clockwise direction. Processing position Q1 is arranged closer to the first opening 12a than the other two processing positions Q and cleaning position CW. That is, processing position Q1 is arranged opposite the first opening 12a. Processing position Q1 is a position where a substrate W is carried in. Processing position Q3 is arranged closer to the second opening 12b than the other two processing positions Q and cleaning position CW. That is, processing position Q3 is arranged opposite the second opening 12b. Processing position Q3 is a position where a substrate W is carried out.

[0195] In this embodiment, the substrate holding part 200 can rotate one revolution (one lap) or more around the rotation axis L200.

[0196] In this embodiment, the processing positions Q are arranged over more than half a circumference (here, approximately 180°) around the pivot axis L200. For example, the processing positions Q are arranged at 90° intervals. In this embodiment, the processing positions Q and the cleaning position CW are arranged over approximately one circumference around the pivot axis L200.

[0197] In this embodiment, similarly to the first embodiment, the cleaning position CW and the cleaning tank 600 are located farthest from the positions (here, the processing positions Q1 and Q3) where the substrate W is transferred to and from the center robot CR. Note that in this embodiment, the distance from the processing position Q3 to the cleaning position CW is the same as the distance from the processing position Q2 to the processing position Q1.

[0198] Other structures of the second embodiment are similar to those of the first embodiment.

[0199] Next, a substrate processing method according to a second embodiment will be described with reference to Fig. 14. Fig. 14 is a flow chart of the substrate processing method according to the second embodiment. The substrate processing method by the substrate processing apparatus 100 according to the second embodiment includes steps S301, S103 to S110, and S302.

[0200] 14, in step S301, the substrate W is loaded into the chamber 11 and held by the substrate holder 200. Specifically, the control unit 102 controls the center robot CR to load the substrate W supported by the arm of the center robot CR into the chamber 11. At this time, the substrate holder 200 is located at the processing position Q1, and the substrate W is loaded into the chamber 11 through the first opening 12a.

[0201] The control unit 102 then controls the center robot CR and the substrate holding unit 200 to transfer the substrate W from the center robot CR to the substrate holding unit 200. As a result, the substrate holding unit 200 holds the substrate W.

[0202] Next, steps S103 to S110 are executed in the same manner as in the first embodiment.

[0203] Next, in step S302, the substrate W is held by the substrate holding part 200 and carried out to the outside of the chamber 11. Specifically, the control part 102 controls the moving mechanism 300 to rotate the substrate holding part 200 to the processing position Q3. Then, when a predetermined time has elapsed since the start of processing the substrate W with the rinse liquid in step S109, the control part 102 controls the moving mechanism 300 to lower the substrate holding part 200. Thereafter, the control part 102 controls the substrate holding part 200 to hold the substrate W. Then, the control part 102 controls the moving mechanism 300 to raise the substrate holding part 200.

[0204] Thereafter, the control unit 102 controls the center robot CR and the substrate holding unit 200 to transfer the substrate W from the substrate holding unit 200 to the center robot CR. Then, the control unit 102 controls the center robot CR to unload the substrate W supported by the arm of the center robot CR to the outside of the chamber 11. At this time, the substrate holding unit 200 has retreated to a position other than the processing position Q1, and the substrate W is unloaded to the outside of the chamber 11 through the second opening 12b.

[0205] In this manner, the processing of the substrate W is completed.

[0206] Other aspects of the substrate processing method of the second embodiment are the same as those of the first embodiment.

[0207] In this embodiment, as described above, the substrate holding part 200 can rotate one revolution (one revolution) or more around the rotation axis L200. This can prevent unnecessary movement of the substrate holding part 200. Specifically, the substrate holding part 200 can reach the multiple processing positions Q efficiently by rotating, for example, clockwise or counterclockwise as appropriate.

[0208] Furthermore, the substrate holding part 200 transports the substrate W sequentially to a plurality of processing positions Q in a predetermined rotation direction (here, clockwise direction) around the rotation axis L200. Therefore, unnecessary movement of the substrate holding part 200 can be suppressed.

[0209] Other effects of the second embodiment are the same as those of the first embodiment.

[0210] (Third embodiment) Next, a substrate processing apparatus 100 according to a third embodiment of the present invention will be described with reference to Figures 15 and 16. Figure 15 is a schematic plan view of the substrate processing apparatus 100 according to the third embodiment. In the third embodiment, unlike the first and second embodiments, an example will be described in which the substrate holding part 200 moves in a substantially straight line.

[0211] 15, in this embodiment, the multiple processing positions Q, cleaning positions CW, and transfer positions R are arranged on a substantially straight line along the X direction. Specifically, the multiple processing positions Q, cleaning positions CW, and transfer positions R are arranged on a substantially straight line along a direction intersecting the direction in which the chamber 11 and the passage 111 are adjacent to each other (Y direction). In other words, the multiple processing positions Q, cleaning positions CW, and transfer positions R are arranged on a substantially straight line along a direction intersecting the direction in which the substrate W is carried from the passage 111 into the chamber 11 (Y direction). In this embodiment, the chamber 11 has a substantially rectangular shape extending in the X direction.

[0212] In this embodiment, for example, the transfer position R, processing position Q1, processing position Q2, processing position Q3, and cleaning position CW are arranged in this order from one side in the X direction to the other side in the X direction. Also, in this embodiment, the transfer position R is arranged at a position closest to the load port LP. Note that the processing liquid used at the processing positions Q1, Q2, and Q3, and the cleaning liquid used at the cleaning position CW are the same as in the first embodiment.

[0213] In this embodiment, one opening 12 is provided for each chamber 11. The opening 12 is formed at a position facing the transfer position R. That is, the opening 12 is formed at a position on the side wall 11a of the chamber 11 that is closest to the transfer position R. Note that a plurality of openings 12 (for example, two) may be provided for each chamber 11. In this case, the opening 12 may have a first opening 12a and a second opening 12b, similar to the second embodiment.

[0214] Of the plurality of processing positions Q and cleaning positions CW, the cleaning position CW is located farthest from the opening 12.

[0215] In this embodiment, the substrate processing unit 10 has a moving mechanism 1300 (see FIG. 16) instead of the moving mechanism 300. The moving mechanism 1300 moves the substrate holder 200. The moving mechanism 1300 is controlled by the control unit 102.

[0216] In this embodiment, the movement mechanism 1300 moves the substrate holding part 200 in a straight line. Also, in this embodiment, the movement mechanism 1300 moves the substrate holding part 200 in the X direction along rail members 1322, which will be described later. Therefore, by being moved in a straight line by the movement mechanism 1300, the substrate holding part 200 can easily transfer the substrate W to, for example, any member at the processing position Q (here, the immersion tank 400), any member at the cleaning position CW (here, the cleaning tank 600), or any member at the transfer position R (here, the transfer table 150).

[0217] Furthermore, the moving mechanism 1300 moves the substrate holder 200 in the vertical direction, as in the first and second embodiments.

[0218] The detailed structure of the moving mechanism 1300 will be described later.

[0219] The substrate processing method of the third embodiment is similar to that of the first embodiment.

[0220] Specifically, the substrate processing method of the third embodiment is the same as that of the first embodiment, except that in the first embodiment, the substrate holding unit 200 is rotated by the moving mechanism 300, whereas in the third embodiment, the substrate holding unit 200 is moved in a straight line by the moving mechanism 1300. Therefore, a description of the substrate processing method of the third embodiment will be omitted.

[0221] In this embodiment, as described above, the multiple processing positions Q and cleaning position CW are positioned on a straight line, and the movement mechanism 1300 moves the substrate holding part 200 in a straight line, thereby moving the substrate holding part 200 between the multiple processing positions Q and cleaning positions CW within the chamber 11. Therefore, the substrate holding part 200 can be easily moved between the multiple processing positions Q and cleaning positions CW.

[0222] Furthermore, as described above, of the processing position Q and the cleaning position CW, the cleaning position CW is located farthest from the opening 12. Therefore, it is possible to prevent the processing position Q from being located farthest from the opening 12. This prevents the distance from the position where the substrate W is processed to the opening 12 from becoming long, and therefore prevents the transport distance of the substrate W from becoming long. Therefore, it is possible to prevent the time required for processing from becoming long.

[0223] Other effects of the third embodiment are similar to those of the above embodiments.

[0224] Next, the moving mechanism 1300 will be described with reference to Fig. 16. Fig. 16 is a schematic diagram showing the structure around the substrate holding part 200 and the moving mechanism 1300 of the substrate processing apparatus 100 of the third embodiment.

[0225] The movement mechanism 1300 includes a lifting mechanism 310 , a linear movement mechanism 1320 that moves the substrate holder 200 in a straight line, and a shaft cover 330 .

[0226] The linear movement mechanism 1320 includes a housing 1321 , a rail member 1322 , and a linear drive unit 1323 .

[0227] In this embodiment, the rail member 1322 includes a first rail member 1322a, a second rail member 1322b, a third rail member 1322c, a fourth rail member 1322d, and a fifth rail member 1322e. Note that in Figure 15, for simplicity of illustration, the rail member 1322 is depicted as a single member.

[0228] First rail member 1322a and second rail member 1322b are fixed to the upper surface of support plate 502. Third rail member 1322c and fourth rail member 1322d are fixed to the lower surface of support plate 502. Fifth rail member 1322e is fixed to the floor surface of chamber 11. In this embodiment, rail member 1322 includes five rail members (first rail member 1322a to fifth rail member 1322e), but the present invention is not limited to this and it is sufficient that at least one rail member 1322 is included.

[0229] In this embodiment, the rail members 1322 are arranged to extend in the X direction. That is, the first to fifth rail members 1322a to 1322e are arranged to be parallel to one another and extend in the X direction.

[0230] The housing 1321 has a generally box-like shape. The housing 1321 is disposed below the support plate 502. The third rail member 1322c and the fourth rail member 1322d are engaged with the upper wall portion of the housing 1321. The fifth rail member 1322e is engaged with the lower wall portion of the housing 1321. Therefore, the housing 1321 is guided in the X direction by the third rail member 1322c, the fourth rail member 1322d, and the fifth rail member 1322e.

[0231] The lower plate 330c is disposed on the upper surface of the support plate 502. The lower plate 330c is engaged with the first rail member 1322a and the second rail member 1322b. Therefore, the lower plate 330c is guided in the X direction by the first rail member 1322a and the second rail member 1322b.

[0232] A through hole through which the screw shaft 311 is inserted is formed in the upper wall of the housing 1321. The housing 1321 accommodates the lower part of the screw shaft 311, the nut 312, the electric motor 313, and the drive belt 314.

[0233] The through-hole 502a (see FIG. 6) of the support plate 502 is formed as an elongated hole extending in the X direction. The lower plate 330c is formed in an annular shape with a through-hole in the center.

[0234] The through hole of the housing 1321, the through hole 502a of the support plate 502, and the through hole of the lower plate 330c are arranged to overlap in the vertical direction. The screw shaft 311 is inserted through the through hole of the housing 1321, the through hole 502a of the support plate 502, and the through hole of the lower plate 330c. The first rail member 1322a and the second rail member 1322b are arranged to sandwich the through hole 502a of the support plate 502 in the Y direction in a plan view. Similarly, the third rail member 1322c and the fourth rail member 1322d are arranged to sandwich the through hole 502a of the support plate 502 in the Y direction in a plan view.

[0235] The screw shaft 311, nut 312, electric motor 313, and drive belt 314 of the lifting mechanism 310 are configured in the same manner as in the first embodiment. However, the electric motor 313 is attached to a housing 1321. The electric motor 313 is attached to the inner surface of the housing 1321, for example.

[0236] The linear drive unit 1323 moves the lifting mechanism 310 in the X direction. When the linear drive unit 1323 moves the lifting mechanism 310 in the X direction, the substrate holding unit 200 moves in the X direction. The linear drive unit 1323 may, for example, have a ball screw mechanism and an electric motor that drives the ball screw mechanism, similar to the lifting mechanism 310.

[0237] The other structures of the third embodiment are the same as those of the above embodiments.

[0238] (Fourth embodiment) Next, a substrate processing apparatus 100 according to a fourth embodiment of the present invention will be described with reference to Figures 17 and 18. Figure 17 is a schematic plan view of the substrate processing apparatus 100 according to the fourth embodiment. Figure 18 is a schematic plan view showing the inside of one chamber 11 of the substrate processing apparatus 100 according to the fourth embodiment. In the fourth embodiment, unlike the third embodiment, an example will be described in which the substrate holding part 200 moves substantially linearly in the Y direction.

[0239] 17, in this embodiment, a plurality of (for example, four) chambers 11 are arranged on both sides of the passage 111 in the Y direction. Each chamber 11 has a generally box shape extending in the Y direction. Furthermore, on both sides of the passage 111 in the Y direction, the plurality of chambers 11 are arranged adjacent to each other in the X direction. In this way, in this embodiment, the plurality of chambers 11 extending in the Y direction are arranged side by side in the X direction.

[0240] 17 and 18, in each chamber 11, the multiple processing positions Q, cleaning positions CW, and transfer positions R are arranged in a substantially straight line along the Y direction. Specifically, the chambers 11 and the passages 111 are arranged in a substantially straight line along the direction in which they are adjacent to each other (the Y direction). In other words, in each chamber 11, the multiple processing positions Q, cleaning positions CW, and transfer positions R are arranged in a substantially straight line along the direction in which the substrate W is carried from the passages 111 into the chambers 11 (the Y direction).

[0241] In this embodiment, the transfer position R is located at a position closest to the passage 111. For example, the transfer position R, processing position Q1, processing position Q3, processing position Q2, and cleaning position CW are located in this order from the passage 111 side. The processing liquid used at the processing positions Q1, Q2, and Q3, and the cleaning liquid used at the cleaning position CW are the same as those in the third embodiment.

[0242] In this embodiment, one opening 12 is provided for one chamber 11. The opening 12 is formed at a position opposite to the transfer position R.

[0243] In this embodiment, similar to the third embodiment, the substrate processing unit 10 has a movement mechanism 1300 that moves the substrate holder 200. However, in this embodiment, the rail members 1322 are arranged to extend in the Y direction. That is, the first to fifth rail members 1322a to 1322e are arranged to be parallel to each other and extend in the Y direction.

[0244] In this embodiment, the movement mechanism 1300 moves the substrate holding part 200 linearly along the Y direction. By being moved linearly by the movement mechanism 1300, the substrate holding part 200 can easily transfer the substrate W to, for example, any member at the processing position Q (here, the immersion tank 400), any member at the cleaning position CW (here, the cleaning tank 600), or any member at the transfer position R (here, the transfer table 150).

[0245] Other structures and the substrate processing method of the fourth embodiment are similar to those of the third embodiment.

[0246] In this embodiment, as described above, a plurality of chambers 11 extending in the Y direction are arranged side by side in the X direction. Therefore, a single substrate processing apparatus 100 can process a larger number of substrates W.

[0247] Other effects of the fourth embodiment are the same as those of the third embodiment.

[0248] (First Modification) Next, a substrate processing apparatus 100 according to a first modified example of the present invention will be described with reference to FIG. 19. FIG. 19 is a flow diagram of a substrate processing method for the substrate processing apparatus 100 according to the first modified example of the present invention. In the first modified example, unlike the above embodiment, an example in which multiple substrates W are processed in parallel will be described. Although the following description will be given with some modifications to the first embodiment, multiple substrates W can also be processed in parallel in other embodiments. For ease of understanding, the multiple substrates W will sometimes be referred to below as the first substrate W1, the second substrate W2, etc., in the order in which they are loaded into the chamber 11. The structure of the substrate processing apparatus 100 according to the first modified example is the same as that of the first embodiment.

[0249] As shown in FIG. 19, in step S1101, the first substrate W1 is carried into the chamber 11 in the same manner as in step S101.

[0250] Next, in step S1102, the first substrate W1 is held by the substrate holding part 200 in the same manner as in step S102.

[0251] Next, in step S1103, the first substrate W1 is immersed in the first chemical liquid in the same manner as in step S103.

[0252] Next, in step S1104, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S104.

[0253] Next, in step S1105, the first substrate W1 is immersed in a rinse liquid in the same manner as in step S105.

[0254] Next, in step S1106, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S106.

[0255] Next, in step S1107, the first substrate W1 is immersed in the second chemical liquid in the same manner as in step S107.

[0256] Next, in step S1108, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S108.

[0257] Next, in step S1109, the second substrate W2 is carried into the chamber 11 in the same manner as in step S1101.

[0258] Next, in step S1110, the second substrate W2 is held by the substrate holding part 200 in the same manner as in step S1102.

[0259] Next, in step S1111, the second substrate W2 is immersed in the first chemical liquid in the same manner as in step S1103.

[0260] Next, in step S1112, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1104.

[0261] Next, in step S1113, the first substrate W1 is treated with a rinse liquid in the same manner as in step S1105.

[0262] Next, in step S1114, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1104.

[0263] Next, in step S1115, the first substrate W1 is placed on the transfer table 150 in the same manner as in step S111.

[0264] Next, in step S1116, the first substrate W1 is carried out of the chamber 11 in the same manner as in step S112.

[0265] Next, in step S1117, the second substrate W2 is immersed in a rinse liquid in the same manner as in step S1105.

[0266] Next, in step S1118, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1104.

[0267] Next, in step S1119, the second substrate W2 is immersed in the second chemical liquid in the same manner as in step S1107.

[0268] Next, in step S1120, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1104.

[0269] Next, in step S1121, the second substrate W2 is treated with a rinse liquid in the same manner as in step S1117.

[0270] Next, in step S1122, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1104.

[0271] Next, in step S1123, the second substrate W2 is placed on the transfer table 150 in the same manner as in step S1115.

[0272] Next, in step S1124, the second substrate W2 is carried out to the outside of the chamber 11 in the same manner as in step S1116.

[0273] In this way, the processing for the first substrate W1 and the second substrate W2 is completed.

[0274] Other processing steps in the first modified example are the same as those in the first embodiment.

[0275] In the first modified example, as described above, the substrate holder 200 processes a plurality of substrates W in parallel by transporting the substrates W to a plurality of processing positions Q. Therefore, the processing time for a plurality of substrates W can be shortened.

[0276] Furthermore, the chuck pins 202 are cleaned at the cleaning position CW when the substrate W is changed over. Specifically, for example, the chuck pins 202 are cleaned at the cleaning position CW after releasing the first substrate W1 and before holding the second substrate W2. Therefore, for example, particles from the first substrate W1 can be prevented from adhering to the second substrate W2 via the chuck pins 202, and therefore contamination of the second substrate W2 can be prevented.

[0277] Other effects of the first modified example are similar to those of the first embodiment.

[0278] (Second Modification) Next, a substrate processing apparatus 100 according to a second modified example of the present invention will be described with reference to Fig. 20. Fig. 20 is a schematic plan view showing the inside of one chamber 11 of the substrate processing apparatus 100 according to the second modified example of the present invention. In the second modified example, unlike the above-described embodiments and modifications, an example will be described in which the same number of processing positions Q for processing using a rinse liquid as the number of processing positions Q for processing using a chemical liquid are provided. In the following, a partial modification of the fourth embodiment will be described, but the second modified example can also be applied to other embodiments and modifications.

[0279] In the second modified example, the processing position Q includes processing positions Q1, Q2, Q3, and Q4. In the second modified example, the substrate W is processed using a first chemical liquid at processing position Q1. The substrate W is processed using a second chemical liquid at processing position Q2. The substrate W is processed using a rinse liquid at processing positions Q3 and Q4.

[0280] In the second modified example, the transfer position R, processing position Q1, processing position Q3, processing position Q2, processing position Q4, and cleaning position CW are arranged in this order from the passage 111 side. The substrate holder 200 transports the substrate W from the transfer position R to the processing position Q1, processing position Q3, processing position Q2, and processing position Q4 in this order. In other words, the multiple processing positions Q (processing position Q1, processing position Q3, processing position Q2, and processing position Q4) are arranged in the order in which the substrate W is transported.

[0281] The other structures of the second modified example are similar to those of the fourth embodiment.

[0282] In the second modified example, as described above, a processing position Q3 is provided for rinsing a substrate W processed at processing position Q1, and a processing position Q4 is provided for rinsing a substrate W processed at processing position Q2. In other words, the number of processing positions for rinsing liquid (here, processing positions Q3 and Q4) is the same as the number of processing positions for chemical liquid (here, processing positions Q1 and Q2). Therefore, for example, when immersing a substrate W in a rinsing liquid, mixing of multiple chemical liquids into the rinsing liquid can be prevented. Furthermore, unlike the case where only one processing position Q for processing a substrate W with a rinsing liquid is provided (such as in the first to fourth embodiments), waiting times can be prevented even if the timing of rinsing processes overlaps when multiple substrates W are processed in parallel.

[0283] Other effects of the second modified example are similar to those of the fourth embodiment.

[0284] Next, a substrate processing method according to a second modified example will be described with reference to Fig. 21. Fig. 21 is a flowchart of the substrate processing method in the substrate processing apparatus 100 according to the second modified example.

[0285] As shown in FIG. 21, in step S1201, the substrate W is loaded into the chamber 11 in the same manner as in step S101.

[0286] Next, in step S1202, the substrate W is held by the substrate holding part 200. Specifically, the control part 102 controls the moving mechanism 1300 to move the substrate holding part 200 to the transfer position R. Then, the control part 102 controls the moving mechanism 1300 and the substrate holding part 200 to cause the substrate W to be held by the substrate holding part 200.

[0287] Next, in step S1203, the substrate W is treated with the first chemical liquid. Specifically, the control unit 102 controls the moving mechanism 1300 to move the substrate holding part 200 to the treatment position Q1. Then, the control unit 102 controls the moving mechanism 1300 to lower the substrate holding part 200.

[0288] Next, in step S1204, the substrate holding part 200 is cleaned at the cleaning position CW. Specifically, the control part 102 controls the moving mechanism 1300 to move the substrate holding part 200 to the cleaning position CW.

[0289] Then, the control unit 102 controls the moving mechanism 1300 to lower the substrate holding unit 200. As a result, the tips (lower parts) of the chuck pins 202 of the substrate holding unit 200 are immersed in the cleaning liquid stored in advance in the cleaning tank 600.

[0290] Next, in step S1205, the substrate W is treated with a rinse liquid. Specifically, the control unit 102 controls the moving mechanism 1300 to move the substrate holding unit 200 to a treatment position Q1. Then, when a predetermined time has elapsed since the treatment of the substrate W with the first chemical liquid was started in step S1203, the control unit 102 controls the moving mechanism 1300 and the substrate holding unit 200 to lower the substrate holding unit 200 and cause the substrate holding unit 200 to hold the substrate W. Thereafter, the control unit 102 controls the moving mechanism 1300 to raise the substrate holding unit 200 and move it to a treatment position Q3.

[0291] Then, the control unit 102 controls the moving mechanism 1300 to lower the substrate holder 200. As a result, the substrate W is immersed in the rinse liquid stored in the immersion bath 400 in advance.

[0292] Next, in step S1206, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1204.

[0293] Next, in step S1207, the substrate W is treated with the second chemical liquid. Specifically, the control unit 102 controls the moving mechanism 1300 to move the substrate holding unit 200 to treatment position Q3. Then, when a predetermined time has elapsed since the treatment of the substrate W with the rinse liquid was started in step S1205, the control unit 102 controls the moving mechanism 1300 and the substrate holding unit 200 to lower the substrate holding unit 200 and cause the substrate holding unit 200 to hold the substrate W. Thereafter, the control unit 102 controls the moving mechanism 1300 to raise the substrate holding unit 200 and move it to treatment position Q2.

[0294] Then, the control unit 102 controls the moving mechanism 1300 to lower the substrate holder 200. As a result, the substrate W is immersed in the second chemical liquid stored in the immersion tank 400 in advance.

[0295] Next, in step S1208, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1204.

[0296] Next, in step S1209, the substrate W is treated with a rinse liquid. At this time, in the second modified example, unlike the above-described embodiment and modified examples, the substrate W is rinsed at a processing position Q (here, processing position Q4) different from the processing position Q (here, processing position Q3) where the substrate W was treated with the first chemical liquid and then rinsed.

[0297] Specifically, the control unit 102 controls the moving mechanism 1300 to move the substrate holding unit 200 to processing position Q2. Then, when a predetermined time has elapsed since the start of processing the substrate W with the second chemical liquid in step S1207, the control unit 102 controls the moving mechanism 1300 and the substrate holding unit 200 to lower the substrate holding unit 200 and cause the substrate holding unit 200 to hold the substrate W. Thereafter, the control unit 102 controls the moving mechanism 1300 to raise the substrate holding unit 200 and move it to processing position Q4.

[0298] Then, the control unit 102 controls the moving mechanism 1300 to lower the substrate holder 200. As a result, the substrate W is immersed in the rinse liquid stored in the immersion bath 400 in advance.

[0299] Next, in step S1210, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1204.

[0300] Next, in step S1211, the substrate W is placed on the transfer table 150. Specifically, the control unit 102 controls the moving mechanism 1300 to move the substrate holding unit 200 to the transfer position R. The control unit 102 then controls the moving mechanism 1300 and the substrate holding unit 200 to lower the substrate holding unit 200 and place the substrate W on the transfer table 150. Thereafter, the control unit 102 controls the moving mechanism 1300 to retract the substrate holding unit 200 from the transfer position R.

[0301] Next, in step S1212, the substrate W is carried out of the chamber 11 in the same manner as in step S112.

[0302] In this manner, the processing of the substrate W is completed.

[0303] Other aspects of the substrate processing method of the second modified example are similar to those of the fourth embodiment.

[0304] (Third Modification) Next, a substrate processing apparatus 100 according to a third modified example of the present invention will be described with reference to Figures 22 and 23. Figure 22 is a schematic plan view showing the inside of one chamber 11 of the substrate processing apparatus 100 according to the third modified example. Unlike the above embodiments and modifications, the third modified example describes an example in which multiple substrates W are processed in parallel using the same chemical solution. The following description will be given with some modifications to the first embodiment, but in other embodiments as well, multiple substrates W can be processed in parallel using the same chemical solution.

[0305] As shown in FIG. 22, in the substrate processing apparatus 100 of the third modified example, the chemical liquid stored in the immersion tank 400 at the processing position Q1 and the chemical liquid stored in the immersion tank 400 at the processing position Q2 are the same chemical liquid.

[0306] The other configurations of the third modified example are the same as those of the first embodiment.

[0307] Next, a substrate processing method by the substrate processing apparatus 100 according to the third modified example will be described with reference to Fig. 23. Fig. 23 is a flowchart of the substrate processing method by the substrate processing apparatus 100 according to the third modified example of the present invention.

[0308] As shown in FIG. 23, in step S1301, the first substrate W1 is carried into the chamber 11 in the same manner as in step S101.

[0309] Next, in step S1302, the first substrate W1 is held by the substrate holding part 200 in the same manner as in step S102.

[0310] Next, in step S1303, the first substrate W1 is immersed in the chemical solution in the same manner as in step S103. At this time, the first substrate W1 is immersed in the chemical solution at the processing position Q1, for example.

[0311] Next, in step S1304, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S104.

[0312] Next, in step S1305, the second substrate W2 is carried into the chamber 11 in the same manner as in step S1301.

[0313] Next, in step S1306, the second substrate W2 is held by the substrate holding part 200 in the same manner as in step S1302.

[0314] Next, in step S1307, the second substrate W2 is immersed in the chemical solution in the same manner as in step S1303. At this time, the second substrate W2 is immersed in the chemical solution at the processing position Q2, for example.

[0315] Next, in step S1308, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1304.

[0316] Next, in step S1309, the first substrate W1 is immersed in a rinse liquid in the same manner as in step S105.

[0317] Next, in step S1310, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1304.

[0318] Next, in step S1311, the first substrate W1 is placed on the transfer table 150 in the same manner as in step S111.

[0319] Next, in step S1312, the first substrate W1 is carried out of the chamber 11 in the same manner as in step S112.

[0320] Next, in step S1313, the second substrate W2 is immersed in a rinse liquid in the same manner as in step S1309.

[0321] Next, in step S1314, the substrate holder 200 is cleaned at the cleaning position CW in the same manner as in step S1304.

[0322] Next, in step S1315, the second substrate W2 is placed on the transfer table 150 in the same manner as in step S1311.

[0323] Next, in step S1316, the second substrate W2 is carried out of the chamber 11 in the same manner as in step S1312.

[0324] In this way, the processing for the first substrate W1 and the second substrate W2 is completed.

[0325] Other processing steps in the third modified example are the same as those in the first embodiment.

[0326] In addition, after step S1311 (after the substrate holding part 200 releases its hold on the first substrate W1), the substrate holding part 200 may be cleaned at the cleaning position CW before step S1313 (before the substrate holding part 200 holds the second substrate W2).

[0327] In the third modified example, as described above, the multiple processing positions Q include at least two processing positions Q (here, processing positions Q1 and Q2) that process substrates W with the same chemical liquid. Therefore, for example, the same processing can be performed on at least two (here, two) substrates W in parallel.

[0328] Other effects of the third modified example are similar to those of the first embodiment.

[0329] (Fourth Modification) Next, a substrate processing apparatus 100 according to a fourth modified example of the present invention will be described with reference to Fig. 24. Fig. 24 is a schematic plan view showing the inside of one chamber 11 of the substrate processing apparatus 100 according to the fourth modified example of the present invention. In the fourth modified example, an example will be described in which the cleaning position CW is located at a position different from that in the above-described embodiment and modified examples. In the following, a partial modification of the fourth embodiment will be described, but the fourth modified example can also be applied to other embodiments and modified examples.

[0330] In the fourth modified example, similarly to the fourth embodiment, the processing position Q includes processing positions Q1, Q2, and Q3. Here, in the fourth modified example, the cleaning position CW is located between the processing positions Q. Also, in the fourth modified example, the cleaning position CW is located next to the position where the rinsing process is performed (processing position Q3). Specifically, in the fourth modified example, the transfer position R, processing position Q1, processing position Q3, cleaning position CW, and processing position Q2 are arranged in this order from the passage 111 side. Note that in the fourth modified example, the processing positions Q1 and Q2 are an example of the "chemical liquid processing position" of the present invention. Also, the processing position Q3 is an example of the "rinsing process position" of the present invention.

[0331] The other structure and substrate processing method of the fourth modified example are similar to those of the fourth embodiment.

[0332] In the fourth modified example, as described above, the cleaning position CW is located between the processing positions Q. Therefore, compared to a case where the cleaning position CW is not located between the processing positions Q, such as in the fourth embodiment, the total distance between the cleaning position CW and the multiple processing positions Q can be made smaller. In other words, the movement distance of the substrate holding part 200 can be made shorter. Therefore, the time required for the movement of the substrate holding part 200 can be shortened.

[0333] Furthermore, as described above, the cleaning position CW is located next to the rinse processing position (here, processing position Q3) where the substrate W is processed with a rinse liquid. Therefore, the distance from the rinse processing position to the cleaning position CW can be shortened. Because the rinse processing time is shorter than the chemical processing time, it is preferable that the time required to clean the substrate holding part 200 during the rinse processing is short. Therefore, shortening the distance from the rinse processing position to the cleaning position CW is effective in shortening the time required for the substrate holding part 200 to move between the rinse processing position and the cleaning position CW.

[0334] The above describes embodiments and modifications of the present invention with reference to the drawings. However, the present invention is not limited to the above embodiments and modifications, and can be embodied in various forms without departing from the spirit and scope of the present invention. Furthermore, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments and modifications. For example, some components may be omitted from all components shown in the embodiments. Furthermore, components from different embodiments and modifications may be appropriately combined. The drawings mainly show each component in a schematic manner to facilitate understanding, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual components due to the convenience of drawing. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments and modifications are merely examples and are not particularly limited. Various modifications are possible within a scope that does not substantially deviate from the effects of the present invention.

[0335] For example, in the above-described embodiment and modified examples (hereinafter, sometimes referred to as "embodiments, etc."), an example has been described in which the chuck pin 202 is cleaned by immersing the chuck pin 202 in a rinse liquid stored in the cleaning tank 600, but the present invention is not limited to this. For example, a spray nozzle that sprays a rinse liquid may be provided at the cleaning position CW. The chuck pin 202 may then be cleaned by spraying the rinse liquid onto the chuck pin 202 using the spray nozzle.

[0336] In the above-described embodiments, the chuck pins 202 are used as contact members that come into contact with the substrate W, but the present invention is not limited to this. The contact members may have shapes other than pin shapes, for example. The contact members may also be members that hold the substrate W by suction.

[0337] Furthermore, in the above-described embodiments, an example has been described in which one process is performed on a substrate W at one processing position Q, but the present invention is not limited to this. For example, a plurality of processes may be performed on a substrate W at one processing position Q. Specifically, for example, at one processing position Q, a chemical process may be performed on a substrate W, and then a rinse process may be performed on the substrate W at the same processing position Q.

[0338] Furthermore, for example, in the first, third, and fourth embodiments, the transfer table 150 is provided in the chamber 11, and in the second embodiment, an example has been described in which the transfer table 150 is not provided in the chamber 11; however, the present invention is not limited to this. For example, in the first, third, and fourth embodiments, the transfer table 150 does not have to be provided in the chamber 11. Furthermore, in the second embodiment, the transfer table 150 may be provided in the chamber 11.

[0339] Furthermore, for example, in the above embodiment, an example has been described in which the substrate W is treated using the first and second chemical liquids, but the present invention is not limited to this. For example, as in the third modified example, the substrate W may be treated using only one chemical liquid. Furthermore, the substrate W may be treated using three or more chemical liquids.

[0340] Furthermore, in the above-described embodiments, an example has been described in which the substrate W is placed on the support table 410 when the substrate W is immersed in the processing liquid, but the present invention is not limited to this. For example, when the substrate W is immersed in the processing liquid stored in the immersion tank 400, the substrate W may be immersed for a predetermined time while being held by the substrate holder 200. In this case, the support table 410 does not have to be provided in the immersion tank 400. In this case, the substrate W may be immersed while being rotated by the substrate holder 200. With this configuration, the substrate W can be immersed in the processing liquid while convection is occurring, thereby enabling more uniform processing of the substrate W.

[0341] In the above embodiments, the substrate W is immersed in the processing liquid when being processed with the processing liquid, but the present invention is not limited to this. For example, the substrate may be processed by discharging the processing liquid onto the substrate W without providing an immersion tank 400 for storing the processing liquid. In particular, since the processing time with a rinse liquid is shorter than the processing time with a chemical liquid, the substrate W may be rinsed by continuously discharging the rinse liquid onto the substrate W without providing an immersion tank 400 for storing the rinse liquid.

[0342] Furthermore, for example, in the third embodiment, an example has been described in which only one opening 12 is provided for one chamber 11, and the substrate W is loaded into and unloaded from the chamber 11 via one (the same) opening 12, but the present invention is not limited to this. For example, in the configuration of the third embodiment, similar to the second embodiment, one chamber 11 may be provided with a first opening 12a through which the substrate W is loaded into the chamber 11 and a second opening 12b through which the substrate W is unloaded from the chamber 11. For example, in the configuration of the second embodiment, one chamber 11 may be provided with only one opening 12.

[0343] In the above embodiments, an example has been described in which the moving mechanisms 300, 1300 immerse the substrate W in the processing liquid by moving the substrate holder 200 when the processing liquid is stored in the immersion tank 400, but the present invention is not limited to this. For example, the substrate W may be placed in the immersion tank 400 when no processing liquid is stored therein, and then the processing liquid may be supplied into the immersion tank 400 by ejecting the processing liquid from the nozzles 38 and 48, and the processing liquid may be stored in the immersion tank 400.

[0344] Furthermore, in the above embodiments, an example has been described in which the substrate W is rotated when immersed in a processing liquid stored in advance, but the present invention is not limited to this, and the substrate W does not have to be rotated.

[0345] Furthermore, in the above-described embodiments, examples have been described in which the process of drying the substrate W and the substrate holding part 200 is not provided, but the present invention is not limited to this. In the above-described embodiments, the substrate W and / or the substrate holding part 200 may be dried.

[0346] In the above-described embodiments, the first chemical liquid, the second chemical liquid, and the rinse liquid are ejected from the same nozzle (for example, nozzle 38, nozzle 48), but the present invention is not limited to this. For example, a nozzle for ejecting the first chemical liquid, a nozzle for ejecting the second chemical liquid, and a nozzle for ejecting the rinse liquid may be provided separately.

[0347] Furthermore, in the above-described embodiments, examples have been described in which the lifting mechanism 310 moves the substrate holding unit 200 in the vertical direction, but the present invention is not limited to this. For example, the lifting mechanism 310 may also move the immersion tank 400 in the vertical direction. In other words, the lifting mechanism 310 may move the substrate holding unit 200 and the immersion tank 400 relatively in the vertical direction. In this case, the lifting mechanism 310 may move either the substrate holding unit 200 or the immersion tank 400, or may move both the substrate holding unit 200 and the immersion tank 400.

[0348] Furthermore, unlike the above-described embodiment, for example, a processing position Q where only the first substrate W1 is processed with the first chemical liquid and a processing position Q where only the second substrate W2 is processed with the second chemical liquid may be provided in one chamber 11. In other words, multiple substrates W that undergo different processes may be processed in parallel.

[0349] In the above-described embodiment, the substrate W is processed in a horizontal state, but the present invention is not limited to this. For example, the substrate W may be processed in a vertical or tilted state. [Industrial Applicability]

[0350] The present invention is suitably used in a substrate processing apparatus. [Explanation of symbols]

[0351] 11: Chamber 12:Aperture 100: Substrate processing apparatus 150: Transfer table (support member) 200: Board holding part 201: Spin Base (Base) 202: Chuck pin (contact member) 204: Electric motor (rotation drive unit) 300, 1300: Movement mechanism 320: Swivel mechanism 400: Immersion tank 410: Support stand 600: Cleaning tank C200: Concentric circles CW: Cleaning position L200: Rotation axis Q, Q1 to Q4: Processing position R: Handover position (support position) W: Substrate

Claims

1. a chamber for housing the substrate; a substrate holder disposed in the chamber and configured to hold the substrates one by one; a moving mechanism that moves the substrate holder; Equipped with the substrate holder has a contact member that comes into contact with the substrate, The moving mechanism moves the substrate holder within the chamber between at least one processing position where the substrate is processed with a processing liquid and a cleaning position where the contact member is cleaned.

2. The substrate processing apparatus according to claim 1 , further comprising an immersion tank disposed at the processing position, for storing the processing liquid, and for accommodating the substrate and immersing the substrate in the processing liquid.

3. The substrate processing apparatus according to claim 2 , wherein the immersion tank is provided with a support table for supporting the substrate.

4. The substrate processing apparatus according to claim 1 , further comprising: a cleaning tank disposed at the cleaning position, which stores a cleaning liquid and accommodates the contact member so that the contact member is immersed in the cleaning liquid.

5. the substrate holder has a rotation drive unit that rotates the contact member, The substrate processing apparatus according to claim 4 , wherein the rotation drive unit rotates the contact member while the contact member is immersed in the cleaning liquid stored in the cleaning tank.

6. The processing position is provided in plurality, The substrate processing apparatus according to claim 1 , wherein the moving mechanism moves the substrate holder between a plurality of the processing positions.

7. the plurality of processing positions include a first processing position and a second processing position; treating the substrate with a first treatment liquid at the first treatment position; The substrate processing apparatus according to claim 6 , wherein the substrate is processed at the second processing position with a second processing liquid different from the first processing liquid.

8. the plurality of processing locations further includes a third processing location; the processing liquid includes a first chemical liquid that is the first processing liquid, a second chemical liquid that is the second processing liquid, and a rinse liquid; treating the substrate with the first chemical solution at the first treatment position; treating the substrate with the second chemical solution at the second treatment position; The substrate processing apparatus according to claim 7 , wherein the substrate is processed with the rinse liquid at the third processing position.

9. the processing liquid includes a first chemical liquid that is the first processing liquid and a second chemical liquid that is the second processing liquid, The substrate processing apparatus according to claim 7 , wherein the contact member is cleaned at the cleaning position after coming into contact with one of the first chemical liquid and the second chemical liquid and before coming into contact with the other of the first chemical liquid and the second chemical liquid.

10. the substrate holder processes the plurality of substrates in parallel by transporting the substrates to the plurality of processing positions; The substrate processing apparatus according to claim 6 , wherein the contact member is cleaned at the cleaning position when the substrate is transferred.

11. a support member disposed inside the chamber and supporting the substrate; the chamber has an opening communicating the inside with the outside and through which the substrate is loaded and / or unloaded; a support position in which the support member is disposed is provided inside the chamber; the support position is located closer to the opening than the processing position; The substrate processing apparatus according to claim 1 , wherein the substrate holder transports the substrate from the support position to the processing position.

12. The substrate holder includes: Holding the substrate horizontally; 4. The substrate processing apparatus according to claim 1, further comprising: a base disposed above the substrate; and a plurality of chuck pins, which are the contact members, protruding downward from the base and holding the peripheral edge of the substrate.

13. the moving mechanism has a turning mechanism that turns the substrate holding part around a turning axis; the processing position and the cleaning position are located on concentric circles centered on the pivot axis; The substrate processing apparatus according to claim 1 , wherein the rotation mechanism moves the substrate holder between the processing position and the cleaning position within the chamber.

14. the chamber has an opening communicating the inside with the outside and through which the substrate is loaded and / or unloaded; The substrate processing apparatus of claim 13 , wherein the cleaning position is located farthest from the opening out of the processing position and the cleaning position.

15. The processing position is provided in plurality, the plurality of processing positions and the plurality of cleaning positions are located in a straight line; 4. The substrate processing apparatus according to claim 1, wherein the moving mechanism moves the substrate holding part in a straight line, thereby moving the substrate holding part between the plurality of processing positions and the cleaning position within the chamber.

16. the chamber has an opening communicating the inside with the outside and through which the substrate is loaded and / or unloaded; The substrate processing apparatus of claim 15 , wherein the cleaning position is located farthest from the opening out of the processing position and the cleaning position.

17. The processing position is provided in plurality, The substrate processing apparatus according to claim 1 , wherein the cleaning position is located between the processing positions.

18. The processing position is provided in plurality, the processing liquid includes a chemical liquid and a rinse liquid, The plurality of processing locations include: a chemical solution processing position for processing the substrate with the chemical solution; a rinse processing position where the substrate is processed with the rinse liquid; Including, The substrate processing apparatus according to claim 1 , wherein the cleaning position is adjacent to a rinsing position.

Images