Laser component

Abstract

To provide a laser component which is advantageous in terms of cost and is hard to change with time.SOLUTION: A laser component includes a laser chip (1) having a laser facet (1a) with an active zone (11), and an optical component (2) disposed downstream of the laser chip (1) at the laser facet (1a), wherein the laser chip (1) and the optical component (2) are connected to one another by a welded joint (3) without a weld consumable.SELECTED DRAWING: Figure 1A

Description

[Technical Field]

[0001] A laser component is disclosed, as well as a method for manufacturing the laser component. Summary of the Invention [Problem to be solved by the invention]

[0002] One problem to be solved is to identify laser components that are particularly cost-effective. A further problem to be solved is to identify laser components that are particularly resistant to aging. A further problem to be solved, among other things, is to specify a method for manufacturing such laser components. [Means for solving the problem]

[0003] A laser component is identified. In operation, the laser component generates electromagnetic radiation, in particular laser radiation. The laser component is configured to generate electromagnetic radiation having a wavelength in a wavelength range between infrared and ultraviolet radiation.

[0004] According to at least one embodiment, the laser component comprises a semiconductor laser chip, which may be, for example, an edge-emitting semiconductor laser chip or a surface-emitting semiconductor laser chip.

[0005] The semiconductor laser chip has, for example, a semiconductor body, a reflective outer surface that forms a resonator, and electrical connection points for contacting the semiconductor laser chip.

[0006] The semiconductor laser chip has a laser facet from which laser radiation generated by the semiconductor laser chip is emitted during operation, the laser facet being formed, for example, by an outer surface, i.e., a side surface or a cover surface, of the semiconductor laser chip.

[0007] The laser facet comprises an active zone, which includes the region where electromagnetic radiation generated during operation of the semiconductor laser leaves the semiconductor laser, e.g., in the region of the active zone, an active layer of the semiconductor laser chip is adjacent to a reflective layer of the semiconductor laser chip, which is part of the resonator of the semiconductor laser chip.

[0008] According to at least one embodiment of the laser component, the laser component comprises an optical element arranged downstream of the semiconductor laser chip at the laser facet, in particular behind the laser facet of the semiconductor laser chip in the emission direction of the semiconductor laser chip.

[0009] This allows all or at least a large proportion of the laser radiation leaving the semiconductor laser chip to pass through the optical element and be optically affected.

[0010] The optical element may be, for example, an optical element for beam shaping by optical refraction. For example, the optical element may be a lens for subsequently focusing laser light. The optical element may also be a diffractive optical element (DOE) based on the principle of optical diffraction, and the beam shaping may be based on the principle of optical diffraction.

[0011] The optical elements are formed from materials that are transparent to laser radiation, such as glass, semiconductor materials and / or plastic materials.

[0012] No other components of the laser component are located between the laser facet and the optical element, but there may be a gap between the laser facet and the optical element that is at least partially filled with air, for example.

[0013] According to at least one embodiment of the laser component, the semiconductor laser chip and the optical element are joined together by a welded joint, which in the following means a non-destructive, detachable mechanical connection created between two joining partners of the laser component under the action of heat and / or pressure.

[0014] This weld joint does not use welding consumables, meaning that the weld joint is formed solely by the mating materials being joined together by the weld joint, so the mating materials are joined directly together without the use of welding consumables, adhesives, or other joining materials.

[0015] In accordance with at least one embodiment of the laser component, the laser component includes a semiconductor laser chip having a laser facet with an active zone and an optical element disposed downstream of the semiconductor laser chip at the laser facet, the semiconductor laser chip and the optical element being connected to one another by a welded joint that does not use welding consumables.

[0016] Laser components are particularly subject to the following considerations: for example, in semiconductor laser devices operated in open atmospheres, adhesion of foreign matter to the laser facets is observed, which leads to degradation of the laser component due to a reduction in optical power. The adhesion can be caused by dust or suspended particles in the surrounding air.

[0017] The laser components described herein are based on the idea that the arrangement of optical elements particularly close to the laser facet reduces, inhibits, and / or prevents the deposition of foreign particles from the surrounding atmosphere. The use of welded joints allows the laser component to be manufactured in a particularly cost-effective manner, without the need for joining materials. Furthermore, there is no need to optimize other materials, e.g., joining materials, with regard to their optical and / or thermal properties, which allows for a particularly simple and cost-effective production.

[0018] According to at least one embodiment of the laser component, the distance between the optical element and the laser facet is at most 10 μm, in particular at most 7 μm or even at most 1 μm. Distances of 500 nm or less are also possible. In particular, the minimum distance between the optical element and the laser facet is in the region of the active zone. Such a small distance has been shown to significantly reduce or prevent the deposition of atmospheric foreign matter on the laser facet.

[0019] According to at least one embodiment of the laser component, the optical element and the semiconductor laser chip are in direct contact with each other at the laser facet. For example, the direct contact between the two elements can be mediated by a weld joint. That is, in this case, if a weld joint is located between the optical element and the semiconductor laser chip, the direct physical contact between these two parts of the laser component is mediated by the weld joint.

[0020] According to at least one embodiment, the laser component comprises a carrier, to which other laser components, in particular the semiconductor laser chip and the optical element, are attached. The carrier represents the mechanical support of the laser component. The optical element is connected to the semiconductor laser chip via the carrier, and a welded joint is arranged between the optical element and the carrier.

[0021] A welded joint can also be arranged between the optical element and the semiconductor laser chip, and these two parts do not have to be directly connected by a welded joint, in other words, it is possible to connect the optical element and the semiconductor laser chip via a carrier, with the welded joint only being arranged between the optical element and the carrier.

[0022] The carrier may have, on its outer surface facing the optical element, a material suitable for a weld joint, for example, such that the outer surface of the carrier facing the optical element may comprise a layer made of a metal oxide and / or a semiconductor oxide, such as silicon dioxide, a glass and / or a glass ceramic, etc.

[0023] According to at least one embodiment of the laser component, the weld joint has a weld seam that extends in the connection area of ​​the optical element and the carrier and includes the material of the optical element and the carrier.

[0024] According to at least one embodiment of the laser component, a weld joint is disposed between the optical element and the semiconductor laser chip. A weld joint can also be disposed between the optical element and the carrier of the laser component. However, it is also possible that the connection between these two parts of the laser component is solely by a weld joint between the optical element and the semiconductor laser chip. The weld joint provides direct physical contact between the optical element and the semiconductor laser chip.

[0025] The semiconductor laser chip may have, for example, a reflective layer comprising a metal oxide and / or a semiconductor oxide on the laser facet, and the reflective layer forms part of the resonator of the semiconductor laser chip. In particular, the materials of the optical element and the reflective layer may form a welded joint.

[0026] For example, the reflective layer may include silicon dioxide, the optical element may be formed of or consist of glass, and the weld joint may include or consist of silicon dioxide, for example.

[0027] According to at least one embodiment of the laser component, the welded joint comprises a weld seam. The weld seam connects the materials in a way that locks them together at the weld joint. A weld joint is understood to be the area where the parts are joined together. In particular, the weld seam is a welded joint along a connecting line or connecting curve. In this case, the parts are only joined in a material-locking manner along the connecting line or connecting curve. In other words, the weld seam is spatially limited to the area of ​​the parts where the parts are joined together. However, the weld seam does not connect the opposing parts over the entire surface, especially in a planar manner.

[0028] According to at least one embodiment of the laser component, the weld joint includes a weld seam between the optical element and the semiconductor laser chip. In particular, the weld seam between the optical element and the semiconductor laser chip is the only connection between these two components of the laser component. Specifically, the connection between the optical element and the semiconductor laser chip does not involve any additional bonding material. The weld seam provides direct physical contact between the optical element and the semiconductor laser chip.

[0029] According to at least one embodiment, the weld seam does not connect the optical element and the semiconductor laser chip in a planar manner, i.e., the weld seam is located along a spatially limited area, such as a line or a curve, between the optical element and the semiconductor laser chip.

[0030] According to at least one embodiment of the laser component, the weld joint extends in the connection area between the optical element and the semiconductor laser chip and has a weld seam made of the materials of the optical element and the semiconductor laser chip. The weld seam extends, for example, along a curve so that the weld joint creates a planar connection between the optical element and the semiconductor laser chip. The weld seam may include, for example, several concentric and / or serpentine curves arranged in a zigzag pattern between the optical element and the semiconductor laser chip. In this way, a connection between the two components that is as planar as possible can be created.

[0031] For example, the weld joint may be spaced from the active zone and run only along one side of the active zone.

[0032] According to at least one embodiment of the laser component, the weld seam laterally surrounds the active zone, the weld seam being guided laterally around the active zone in the plane of the connection area between the optical element and the semiconductor laser chip.

[0033] In this case, the active zone can be sealed with a weld seam that laterally surrounds the active zone, so that the active zone is laterally surrounded by the weld seam, the optical element, and the semiconductor laser chip, which prevents foreign matter from accumulating in the active zone.

[0034] According to at least one embodiment of the laser component, the laser component does not have a sealed housing, which means, for example, that the laser component can comprise a housing that is not sealed, or that the laser component does not comprise any housing and the components of the laser component can be arranged together, for example, on a laser component carrier.

[0035] In particular, the arrangement of the optical elements at a short distance from the laser facet allows the absence of a sealed enclosure, which allows the production of a particularly compact and cost-effective laser component.

[0036] Further disclosed is a method for manufacturing a laser component. In particular, the laser components described herein can be manufactured by this method. This means that all features disclosed for the laser component are also disclosed for the method, and vice versa.

[0037] According to at least one embodiment of the method, a semiconductor laser chip is first provided having a laser facet with an active zone.

[0038] According to at least one embodiment of the method, an optical element is provided, the optical element being disposed on the laser facet.

[0039] According to at least one embodiment of the method, in a further method step the semiconductor laser chip and the optical element are joined in the connection region by means of a welding process, which is carried out without consumables.

[0040] According to at least one embodiment of the method, the method comprises: providing a semiconductor laser chip having a laser facet with an active zone; Providing an optical element; positioning an optical element at the laser facet; and joining the semiconductor laser chip and the optical element at the connection region by a welding process that is performed without the use of welding consumables.

[0041] The semiconductor laser chip and the optical element can be directly connected at the interface between the semiconductor laser chip and the optical element by a welding process.

[0042] Alternatively or additionally, the optical element can be joined by a welding process in the connection area between the optical element and the carrier after the semiconductor laser chip is joined to the carrier, and the semiconductor laser chip and the optical element can be joined indirectly via the carrier after being joined to the carrier.

[0043] According to at least one embodiment of the method, joining the semiconductor laser chip and the optical element in the connection region by a welding process includes creating a weld seam. In particular, the weld seam between the optical element and the semiconductor laser chip is the only connection between these two parts of the laser assembly. In particular, no additional bonding material is used in the connection between the optical element and the semiconductor chip.

[0044] According to at least one embodiment of the present method, the weld seam is not generated in a planar manner between the optical element and the semiconductor laser chip, but rather in a spatially limited region (e.g., along a line or curve) between the optical element and the semiconductor laser chip.

[0045] According to at least one embodiment of the method, the welding process is carried out by means of focused laser light in the connection area. For example, the laser light is guided through an optical element and focused at the interface between the parts to be joined. This creates a high-power density area at the interface, where the joining partners are locally melted. The laser light is then moved, for example, along a curve, to create a weld seam made of the materials of the joining partners.

[0046] For example, a welding process can be used, such as that used for bonding glass from Primoceler. However, alternative laser welding processes can also be used. If the optical element is attached to the carrier by a weld joint, the laser can also be focused through the carrier to the interface with the optical element, if the carrier material is suitable.

[0047] The laser components and methods described herein are described in more detail below with reference to example embodiments and associated figures. [Brief explanation of the drawings]

[0048] [Figure 1A] 1A-1C are schematic diagrams further illustrating a first exemplary embodiment of the method described herein and a first exemplary embodiment of the laser component described herein. [Figure 1B] 1 is a schematic diagram further illustrating a first exemplary embodiment of the method described herein and a first exemplary embodiment of the laser component described herein. [Figure 2A] 1 is a schematic diagram further illustrating a second exemplary embodiment of the method described herein and a second exemplary embodiment of the laser component described herein. [Figure 2B] 1 is a schematic diagram further illustrating a second exemplary embodiment of the method described herein and a second exemplary embodiment of the laser component described herein. [Figure 3]10A-10C are schematic diagrams illustrating in further detail a third exemplary embodiment of the method described herein and a third exemplary embodiment of the laser component described herein. DETAILED DESCRIPTION OF THE INVENTION

[0049] In the figures, elements that are identical, similar, or have similar functions are given the same reference symbols. The canvas drawings and proportions of the elements shown in the drawings should be treated as not to scale. Rather, individual elements may be depicted exaggeratedly larger to enhance visibility and / or comprehension.

[0050] A first exemplary embodiment of the method described herein will now be described in more detail according to the schematic cross-sectional view of FIG. 1A.

[0051] In this method, a semiconductor laser chip 1 is first provided. The semiconductor laser chip 1 may be, for example, an edge-emitting or surface-emitting semiconductor laser chip. The semiconductor laser chip has a laser facet 1a through which laser radiation generated within the semiconductor laser chip 1 exits the semiconductor laser chip during operation.

[0052] A reflective layer 12 is formed on the laser facet 1a. The reflective layer 12 forms part of the resonator of the semiconductor laser chip 1. The reflective layer 12 comprises, for example, metal oxides and / or semiconductor oxides, in particular alternating layers with different refractive indices.

[0053] For example, the outermost layer of the reflective layer can be made of a material such as silicon dioxide.

[0054] Also provided is an optical element 2. The optical element 2 may be provided for beam shaping of the laser radiation, for example by refraction and / or diffraction. In the exemplary embodiment of Figure 1A, the optical element 2 is made of, for example, glass.

[0055] The optical element 2 is arranged as close as possible to the laser facet 1a, the distance d between the laser facet and the optical element 2 being at most 10 μm, in particular at most 7 μm.

[0056] A laser 5 is also provided to generate laser radiation 7. The laser radiation 7 is focused, for example via an optical system 6, onto the interface between the semiconductor laser chip 1 and the optical element 2, such that a weld joint 3 is formed in the first connection region 41 after the molten material has solidified.

[0057] The schematic diagram of Fig. 1B shows a front view through the optical element to the first connection area 41 between the optical element 2 and the semiconductor laser chip 1. As is clear from Fig. 1B, the weld joint 3 is formed along a weld seam 31 that runs as a serpentine curve in order to create a particularly large connection area 41 in terms of surface area. In the exemplary embodiment of Figs. 1A and 1B, the weld seam 31 extends above the active zone 11 located at the lower end of the laser facet 1a.

[0058] This results in a laser component having a semiconductor laser chip 1 with a laser facet 1a that is provided with an active zone 11. An optical element 2 is arranged downstream of the semiconductor laser chip 1 at the laser facet 1a, and the semiconductor laser chip and the optical element 2 are joined by a weld joint 3. The weld joint 3 is free of welding consumables.

[0059] The weld joint 3 provides direct physical contact between the semiconductor laser chip 1 and the optical element.

[0060] The weld joint 3 extends in a first connection region 41 between the optical element 2 and the semiconductor laser chip 1 and has a weld seam 31 comprising the materials of both components, where the semiconductor laser chip 1 is provided with a reflective layer 12 on the laser facet 1a, the material of which forms the weld joint 3 with the material of the optical element.

[0061] The laser component does not have a sealed housing, but at most one unsealed housing 9 .

[0062] Further exemplary embodiments of the methods and laser components described herein are described in connection with the schematic diagrams of FIGS. 2A and 2B.

[0063] 1A and 1B, the active zone 11 is here surrounded laterally by at least one weld seam 31. This means that the active zone 11 is surrounded laterally by at least one weld seam 31, for example in the plane of the first connection region 41.

[0064] 2A and 2B, the active zone 11 is surrounded by two weld seams 31 that form the weld joint 3. The weld seams 31 run concentrically, which allows for a particularly mechanically stable connection between the optical element 2 and the semiconductor laser chip 1.

[0065] By surrounding the active zone 11 by the weld seam 31 the laser facets are well protected against contamination, especially in the active zone 11 .

[0066] A third exemplary embodiment of the methods and laser components described herein is described with reference to the schematic diagram of Figure 3. In this exemplary embodiment, the weld joint has a weld seam 31 that extends in a second joint region 42 between the optical element 2 and the carrier 8 and includes the materials of the optical element 2 and the carrier 8. The carrier 8 may have, for example, on its upper side facing the optical element 2, a layer made of glass or glass ceramic.

[0067] 1A, 1B, 2A, and 2B, a welded joint 3 may also be formed between the optical element 2 and the semiconductor laser chip 1. Furthermore, in this exemplary embodiment, the distance d between the optical element 2 and the semiconductor laser 12 may be selected to be slightly larger than in the exemplary embodiment in which the optical element and the semiconductor laser chip 1 are directly joined by a welded joint disposed therebetween. This allows for a larger tolerance when associating the optical element 2 with the semiconductor laser chip 1.

[0068] This intimate or direct arrangement of the optical element 2 against the laser facet 1a insulates the laser facet from the surrounding air, which may contain harmful molecules. This prevents the accumulation of foreign particles on the laser facet and makes hermetic sealing of the laser component unnecessary. This allows for a particularly cost-effective production of laser components that are characterized by a high aging stability.

[0069] The scope of the carrier is not limited by the description based on the exemplary embodiments, and the invention may include any combination of features in the invention, including combinations of features explicitly recited in the claims, whether the combination of features is explicitly recited in the claims or disclosed by the description of the exemplary embodiments, and even features not explicitly recited in the claims, even if the features are novel.

[0070] This patent application claims priority from German Patent Application No. 10 2022 103 260.4, the disclosure of which is incorporated herein by reference. [Explanation of symbols]

[0071] 1. Semiconductor laser chip 1a Laser Facet 11 Active Zone 12 Reflective layer 2. Optical Elements 3 Welded joints 31 Weld Seam 41 First connection area 42 Second Connection Area 5. Laser 6 Optical system 7. Laser light 8. Career 9. Cabinet D distance

Claims

1. a semiconductor laser chip (1) having a laser facet (1a) with an active zone (11); an optical element (2) arranged downstream of the semiconductor laser chip (1) on the laser facet (1a), the optical element (2) is made of a material selected from glass, semiconductor material, and / or plastic material; The semiconductor laser chip (1) and the optical element (2) are joined together by a weld seam (31); the weld seam (31) includes the material of the optical element (2) and the semiconductor laser chip (1); Laser parts.

2. The distance between the optical element (2) and the laser facet (1a) is at most 10 μm; The laser component according to claim 1 .

3. The semiconductor laser chip (1) and the optical element (2) are in direct contact with each other at the laser facet (1 a).

3. The laser component according to claim 1 or 2.

4. Further comprising a carrier (8), The semiconductor laser chip (1) and the optical element (2) are connected to each other via a carrier (8), and the weld seam (31) is disposed between the optical element (2) and the carrier (8).

3. The laser component according to claim 1 or 2.

5. the weld seam (31) extends to a second connection area (42) between the optical element (2) and the carrier (8) and comprises the material of the optical element (2) and the carrier (8). The laser component according to claim 4.

6. the weld seam (31) extends to a first connection area (41) between the optical element (2) and the semiconductor laser chip (1); 3. The laser component according to claim 1 or 2.

7. the weld seam (31) laterally surrounds the active zone (11); The laser component according to claim 6.

8. Does not have a sealed enclosure, 3. The laser component according to claim 1 or 2.

9. The semiconductor laser chip (1) comprises a reflective layer (12) on the laser facet (1a) containing a metal oxide and / or a semiconductor oxide.

3. The laser component according to claim 1 or 2.

10. 1. A method of manufacturing a laser component, comprising: providing a semiconductor laser chip (1) having a laser facet (1a) with an active zone (11); providing an optical element (2), the optical element (2) being formed from a material selected from glass, semiconductor material, and / or plastic material; positioning the optical element (2) at the laser facet (1a); and joining the semiconductor laser chip (1) and the optical element (2) at the connection areas (41, 42) by a welding process, The method, wherein the step of joining the semiconductor laser chip (1) and the optical element (2) at the connection region (41, 42) by the welding process includes the step of creating a weld seam (31), the weld seam (31) comprising materials of the optical element (2) and the semiconductor laser chip (1).

11. The welding process is carried out by means of a laser beam (7) focused on the connection area (41, 42), The method of claim 10.

12. In the connection area (41, 42) a material is melted to form a welded joint (3) after solidification. The method of claim 11.

13. Producing a laser component according to claim 1 or 2, 13. The method of claim 11 or 12.

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